TW202244992A - System for processing micro light emitting diode - Google Patents

Abstract

The present disclosure provides a selectively switchable photomask for a laser light source. The selectively switchable photomask includes a switch cell disposed under the laser light source. The switch cell includes a first substrate, a second substrate opposite to the first substrate, a pixel electrode, a common electrode and a switchable light transmission layer. The pixel electrode is disposed on the first substrate. The common electrode is disposed on the second substrate. The switchable light transmission layer is disposed between the pixel electrode and the common electrode.

Description

Translated fromChinese

供雷射光源使用的選擇性切換式光罩以及處理微型發光二極體的系統Selectively switchable reticles for laser light sources and systems for processing miniature light-emitting diodes

本揭示內容是關於一種供雷射光源使用的選擇性切換式光罩，且特別是關於一種用於微型發光二極體的選擇性切換式光罩。The present disclosure relates to a selectively switchable mask for a laser light source, and more particularly to a selectively switchable mask for micro light emitting diodes.

隨著面板技術的持續進步，微型發光二極體(micro light emitting diode；micro LED)可應用於各種顯示器中，例如無邊框顯示器、筆記型電腦顯示器、穿戴型顯示器等。儘管micro LED具有亮度高、反應時間短、發光效能高等優點，micro LED的組裝仍面臨生產效率低和製造成本高等問題。With the continuous advancement of panel technology, micro light emitting diodes (micro LEDs) can be applied to various displays, such as borderless displays, notebook computer displays, wearable displays, and the like. Although micro LEDs have the advantages of high brightness, short response time, and high luminous efficacy, the assembly of micro LEDs still faces problems such as low production efficiency and high manufacturing costs.

鑑於上述，目前亟需發展出一種新的組裝micro LED的方法以克服前述問題。In view of the above, there is an urgent need to develop a new method for assembling micro LEDs to overcome the aforementioned problems.

本揭示內容提供了一種供雷射光源使用的選擇性切換式光罩，選擇性切換式光罩包含設置於雷射光源之下的切換單元。切換單元包含第一基板、與第一基板相對的第二基板、薄膜電晶體元件、共用電極和可切換光穿透層。像素電極設置於第一基板上。共用電極設置於第二基板上。可切換光穿透層設置於像素電極與共用電極之間。The present disclosure provides a selectively switchable mask for a laser light source. The selectively switchable mask includes a switching unit disposed under the laser light source. The switching unit includes a first substrate, a second substrate opposite to the first substrate, a thin film transistor element, a common electrode and a switchable light-transmitting layer. The pixel electrodes are disposed on the first substrate. The common electrode is disposed on the second substrate. The switchable light-transmitting layer is disposed between the pixel electrode and the common electrode.

在一些實施方式中，可切換光穿透層為液晶層。In some embodiments, the switchable light-transmissive layer is a liquid crystal layer.

在一些實施方式中，切換單元提供小於約30%的穿透率。In some embodiments, the switching unit provides a transmittance of less than about 30%.

在一些實施方式中，切換單元提供約30%至約80%的穿透率。In some embodiments, the switching unit provides a penetration rate of about 30% to about 80%.

在一些實施方式中，切換單元提供約80%至約100%的穿透率。In some embodiments, the switching unit provides a transmittance of about 80% to about 100%.

在一些實施方式中，選擇性切換式光罩更包含設置於第二基板和用電極之間的遮光元件，其中遮光元件具有第一投影於第一基板上，像素電極具有第二投影於第一基板上，第一投影與第二投影交錯設置。In some embodiments, the selectively switchable mask further includes a light shielding element disposed between the second substrate and the electrode, wherein the light shielding element has a first projection on the first substrate, and the pixel electrode has a second projection on the first substrate. On the substrate, the first projection and the second projection are arranged alternately.

在一些實施方式中，選擇性切換式光罩更包含設置於第二基板之上的遮光元件，其中遮光元件具有第一投影於第一基板上，像素電極具有第二投影於第一基板上，第一投影與第二投影交錯設置。In some embodiments, the selectively switchable mask further includes a shading element disposed on the second substrate, wherein the shading element has a first projection on the first substrate, and the pixel electrode has a second projection on the first substrate, The first projection and the second projection are arranged alternately.

在一些實施方式中，選擇性切換式光罩更包含薄膜電晶體元件和遮光元件。薄膜電晶體元件設置於第一基板上，且與像素電極分離。遮光元件設置於該薄膜電晶體元件上，其中遮光元件具有第一投影於第一基板上，像素電極具有第二投影於第一基板上，第一投影與第二投影交錯設置。In some embodiments, the selectively switchable mask further includes a thin film transistor device and a light shielding device. The thin film transistor element is arranged on the first substrate and separated from the pixel electrode. The light-shielding element is arranged on the thin film transistor element, wherein the light-shielding element has a first projection on the first substrate, the pixel electrode has a second projection on the first substrate, and the first projection and the second projection are arranged alternately.

在一些實施方式中，可切換光穿透層為電致變色層。In some embodiments, the switchable light-transmissive layer is an electrochromic layer.

在一些實施方式中，切換單元提供小於約20%的穿透率。In some embodiments, the switching unit provides a transmittance of less than about 20%.

在一些實施方式中，切換單元提供約20%至約60%的穿透率。In some embodiments, the switching unit provides a penetration rate of about 20% to about 60%.

在一些實施方式中，切換單元提供約60%至約80%的穿透率。In some embodiments, the switching unit provides a penetration rate of about 60% to about 80%.

本揭示內容提供了一種用於處理微型發光二極體的系統，包含選擇性切換式光罩以及設置於選擇性切換式光罩之下的載體基板。The present disclosure provides a system for processing micro-LEDs, including a selectively switchable mask and a carrier substrate disposed under the selectively switchable mask.

在一些實施方式中，用於處理微型發光二極體的系統更包含設置於載體基板下且與載體基板接觸的黏著層。In some embodiments, the system for processing micro-LEDs further includes an adhesive layer disposed under and in contact with the carrier substrate.

在一些實施方式中，用於處理微型發光二極體的系統更包含設置於切換單元與載體基板之間的可移動式遮罩，可移動式遮罩具有彼此分離的複數個孔洞，其中像素電極具有第一投影於第一基板上，複數個孔洞的每一者具有第二投影於第一基板上，第一投影大於第二投影，且第二投影位於第一投影中。In some embodiments, the system for processing miniature LEDs further includes a movable mask disposed between the switching unit and the carrier substrate, the movable mask has a plurality of holes separated from each other, wherein the pixel electrode There is a first projection on the first substrate, each of the plurality of holes has a second projection on the first substrate, the first projection is larger than the second projection, and the second projection is located in the first projection.

本揭示內容提供了一種用於處理微型發光二極體的系統，包含選擇性切換式光罩以及黏著層，黏著層設置於選擇性切換式光罩下且與選擇性切換式光罩的第一基板直接接觸。The present disclosure provides a system for processing micro-LEDs, comprising a selectively switchable mask and an adhesive layer disposed under the selectively switchable mask and attached to a first of the selectively switchable mask. substrate in direct contact.

以下將以實施方式對上述之說明做詳細的描述，並對本揭示內容之技術方案提供更進一步的解釋。The above-mentioned description will be described in detail in the following implementation manners, and further explanations will be provided for the technical solution of the present disclosure.

為了使本揭示內容之敘述更加詳盡與完備，可參照所附之圖式及以下所述各種實施例，圖式中相同之號碼代表相同或相似之元件。In order to make the description of the present disclosure more detailed and complete, reference may be made to the accompanying drawings and various embodiments described below, and the same numbers in the drawings represent the same or similar elements.

以下將以圖式揭露本揭示之複數個實施方式，為明確說明起見，許多實務上的細節將在以下敘述中一併說明。然而，應瞭解到，這些實務上的細節不應用以限制本揭示內容。也就是說，在本揭示內容的部分實施方式中，這些實務上的細節是非必要的。此外，為簡化圖式起見，一些習知慣用的結構與元件在圖式中將以簡單示意的方式繪示之。A plurality of implementations of the present disclosure will be disclosed in the following diagrams. For the sake of clarity, many practical details will be described together in the following description. However, it should be understood that these practical details should not be used to limit the present disclosure. That is, in some embodiments of the present disclosure, these practical details are unnecessary. In addition, for the sake of simplifying the drawings, some well-known structures and components will be shown in a simple and schematic manner in the drawings.

在本文中，由「一數值至另一數值」表示的範圍，是一種避免在說明書中一一列舉該範圍中的所有數值的概要性表示方式。因此，某一特定數值範圍的記載，涵蓋該數值範圍內的任意數值以及由該數值範圍內的任意數值界定出的較小數值範圍，如同在說明書中明文寫出該任意數值和該較小數值範圍一樣。Herein, a range indicated by "one value to another value" is a general representation which avoids enumerating all values in the range in the specification. Therefore, the description of a specific numerical range covers any numerical value in the numerical range and the smaller numerical range bounded by any numerical value in the numerical range, as if the arbitrary numerical value and the smaller numerical value are expressly written in the specification. same range.

在實施方式與申請專利範圍中，除非內文中對於冠詞有所特別限定，否則「一」與「該」可泛指單一個或複數個。關於本文中所使用之「約」、「大約」或「大致」的用語一般通常係指數值之誤差或範圍約百分之二十以內，較佳地是約百分之十以內，更佳地則是約百分五之以內。In the embodiments and the scope of the patent application, unless the article is specifically limited in the context, "a" and "the" can generally refer to a single or plural. As used herein, the terms "about", "approximately" or "approximately" generally refer to the error or range of the value within about 20%, preferably within about 10%, more preferably It is within about five percent.

微型發光二極體(micro light emitting diode；micro LED)顯示器由微型發光二極體陣列(micro LED array)所組成。一般來說，micro LED為可發出各種顏色的光(例如:紅光、綠光、藍光或其他顏色的光)之micro LED，而多個micro LED經組合和排列而形成micro LED陣列。在形成micro LED陣列的過程中包含將micro LED轉移到載體基板的巨量轉移操作以及將micro LED接合到薄膜電晶體基板的接合操作。A micro light emitting diode (micro LED) display is composed of a micro light emitting diode array (micro LED array). Generally speaking, micro LEDs are micro LEDs that can emit light of various colors (for example: red light, green light, blue light or other colors of light), and a plurality of micro LEDs are combined and arranged to form a micro LED array. The process of forming the micro LED array includes the mass transfer operation of transferring the micro LED to the carrier substrate and the bonding operation of bonding the micro LED to the thin film transistor substrate.

本揭示內容提供一種可用於巨量轉移操作以及接合操作的選擇性切換式光罩。在進行巨量轉移操作時，將選擇性切換式光罩設置於雷射光源之下，可以將大量的micro LED轉移到載體基板上，從而提升生產效率。在進行接合操作時，將選擇性切換式光罩設置於雷射光源之下，可以將大量的micro LED接合到薄膜電晶體基板，從而提升生產效率。由於本揭示內容的選擇性切換式光罩可同時應用於巨量轉移和接合操作，因此，可以大幅降低製造成本，並進一步提升整體的生產效率。以下將詳細說明本揭示內容的選擇性切換式光罩之各種實施方式。The present disclosure provides a selectively switchable reticle that can be used for bulk transfer operations as well as splicing operations. When performing mass transfer operations, placing a selectively switchable mask under the laser light source can transfer a large number of micro LEDs to the carrier substrate, thereby improving production efficiency. During the bonding operation, a selectively switchable mask is placed under the laser light source, so that a large number of micro LEDs can be bonded to the thin film transistor substrate, thereby improving production efficiency. Since the selectively switchable photomask of the present disclosure can be applied to both mass transfer and bonding operations, the manufacturing cost can be greatly reduced and the overall production efficiency can be further improved. Various embodiments of the selectively switchable mask of the present disclosure will be described in detail below.

請參照第1圖，其為根據本揭示內容之一些實施方式所繪示的巨量轉移裝置的剖面示意圖。巨量轉移又可稱為選擇性雷射轉移，詳細來說，透過雷射光112選擇性地將欲轉移的micro LED轉移到載體基板上。如第1圖所示，選擇性切換式光罩100設置於提供雷射光112的雷射光源110之下，載體基板120B透過黏著層122B將micro LED 130B固定在黏著層122B上，而載體基板140透過黏著層142將micro LED 130R、130G、130B分別固定在載體基板140上。須說明的是，第1圖繪示在完成micro LED 130B的轉移之前，已先完成micro LED 130R、130G的轉移。在進行巨量轉移操作時，雷射光112通過切換單元102a和載體基板120B至黏著層122B，黏著層122B因雷射光112的能量而改變其黏著力，使得原本固定在載體基板120B的micro LED 130B脫落至載體基板140上，並藉由載體基板140上的黏著層142而固定。第1圖中micro LED 130R、130G、130B分別歷經上述的轉移操作而形成載有micro LED 130R、130G、130B的載體基板140。須說明的是，本案的micro LED 130R代表紅色的micro LED，micro LED 130G代表綠色的micro LED，micro LED 130B代表藍色的micro LED。類似地，載體基板120B和黏著層122B代表載有藍色的micro LED的載體基板和黏著層。Please refer to FIG. 1 , which is a schematic cross-sectional view of a mass transfer device according to some embodiments of the present disclosure. The mass transfer can also be called selective laser transfer. Specifically, the micro LED to be transferred is selectively transferred to the carrier substrate through thelaser light 112 . As shown in FIG. 1 , the selectivelyswitchable photomask 100 is disposed under thelaser light source 110 that provideslaser light 112 , thecarrier substrate 120B fixes themicro LED 130B on theadhesive layer 122B through theadhesive layer 122B, and thecarrier substrate 140 Themicro LEDs 130R, 130G, and 130B are respectively fixed on thecarrier substrate 140 through theadhesive layer 142 . It should be noted that the transfer ofmicro LEDs 130R and 130G is completed before the transfer ofmicro LED 130B is completed in FIG. 1 . During the mass transfer operation, thelaser light 112 passes through theswitching unit 102a and thecarrier substrate 120B to theadhesive layer 122B, and theadhesive layer 122B changes its adhesive force due to the energy of thelaser light 112, so that themicro LED 130B originally fixed on thecarrier substrate 120B falls off onto thecarrier substrate 140 and is fixed by theadhesive layer 142 on thecarrier substrate 140 . In FIG. 1 , themicro LEDs 130R, 130G, and 130B undergo the above-mentioned transfer operations respectively to form thecarrier substrate 140 carrying themicro LEDs 130R, 130G, and 130B. It should be noted that themicro LED 130R in this case represents a red micro LED, themicro LED 130G represents a green micro LED, and themicro LED 130B represents a blue micro LED. Similarly,carrier substrate 120B andadhesive layer 122B represent the carrier substrate and adhesive layer carrying the blue micro LED.

在一些實施方式中，雷射光源110可為鈦藍寶石雷射器，其可具有較寬的波長調節範圍(例如約670nm至約1200nm之間的波長)。在其他實施方式中，雷射光源110可為摻有稀土元素的玻璃(SiO₂)光纖作為增益介質的光纖雷射器。在一些實施方式中，雷射光112可為Nd:YAG、Nd:YVO₄或Yb:YAG的固態雷射，其可提供約266nm、355nm、532nm的峰值波長(peak wavelength)，但不限於此。在其他實施方式中，雷射光112可為氣態雷射，例如提供約248nm的KrF、約353nm的XeF、約193nm的ArF、約308nm的XeCl、約157nm的F₂的準分子雷射；也可例如是提供約632.8nm的氦氖雷射、約1064nm的二氧化碳雷射、約6000nm至約8000nm的一氧化碳雷射、約337.1nm的氮氣雷射、約442nm的氦鎘雷射、金屬蒸氣雷射、金屬鹵化物雷射或混合氣體雷射，但不限於此。In some embodiments, thelaser light source 110 can be a Ti:Sapphire laser, which can have a wide wavelength tuning range (eg, a wavelength between about 670 nm and about 1200 nm). In other implementations, thelaser light source 110 may be a fiber laser with glass (SiO₂ ) fiber doped with rare earth elements as a gain medium. In some embodiments, thelaser light 112 can be Nd:YAG, Nd:YVO₄ or Yb:YAG solid-state lasers, which can provide peak wavelengths of about 266nm, 355nm, 532nm, but not limited thereto. In other embodiments, thelaser light 112 can be a gaseous laser, such as an excimer laser that provides KrF at about 248nm, XeF at about_353nm , ArF at about 193nm, XeCl at about 308nm, and F at about 157nm; For example, it provides about 632.8nm helium-neon laser, about 1064nm carbon dioxide laser, about 6000nm to about 8000nm carbon monoxide laser, about 337.1nm nitrogen laser, about 442nm helium cadmium laser, metal vapor laser, Metal halide laser or mixed gas laser, but not limited thereto.

須說明的是，選擇性切換式光罩100的切換單元102a、102b可經由調整而改變其光穿透能力。換句話說，第1圖繪示的雷射光112可穿過切換單元102a，而無法穿過切換單元102b。因此，巨量轉移又可稱為選擇性雷射轉移。此外，在一些實施方式中，巨量轉移可先將micro LED 130R選擇性地轉移至載體基板140上，再將micro LED 130G選擇性地轉移至載體基板140上，最後將micro LED130B選擇性地轉移至載體基板140上。藉由如第1圖所示的巨量轉移裝置，使得多個micro LED 130R、130G、130B經組合和排列而形成micro LED陣列。It should be noted that theswitching units 102a, 102b of the selectivelyswitchable photomask 100 can be adjusted to change their light penetration capabilities. In other words, thelaser light 112 shown in FIG. 1 can pass through theswitching unit 102a, but cannot pass through theswitching unit 102b. Therefore, mass transfer can also be called selective laser transfer. In addition, in some embodiments, the mass transfer can first selectively transfer themicro LED 130R to thecarrier substrate 140, then selectively transfer themicro LED 130G to thecarrier substrate 140, and finally transfer themicro LED 130B selectively. onto thecarrier substrate 140. By means of the mass transfer device shown in FIG. 1 , a plurality ofmicro LEDs 130R, 130G, 130B are combined and arranged to form a micro LED array.

請參照第2圖，其為根據本揭示內容之一些實施方式所繪示的雷射接合裝置的剖面示意圖。詳細來說，在完成如第1圖所示之巨量轉移操作，進行如第2圖所示之雷射接合操作。將選擇性切換式光罩100設置於提供雷射光源114的雷射光源110之下，將第1圖中之載體基板140翻轉(例如轉180度)，使得micro LED 130R、130G、130B朝向薄膜電晶體基板150。類似地，在進行雷射接合操作時，雷射光源114通過切換單元102a、載體基板140、黏著層142和micro LED 130R、130G、130B，使得micro LED 130R、130G、130B上的墊片(例如錫墊片)熔化並接合於薄膜電晶體基板150上。Please refer to FIG. 2 , which is a schematic cross-sectional view of a laser bonding device according to some embodiments of the present disclosure. In detail, after completing the mass transfer operation as shown in FIG. 1, the laser bonding operation as shown in FIG. 2 is performed. Place the selectivelyswitchable photomask 100 under thelaser light source 110 that provides thelaser light source 114, turn thecarrier substrate 140 in Figure 1 over (for example, turn 180 degrees), so that themicro LEDs 130R, 130G, 130B face thefilm Transistor substrate 150 . Similarly, during the laser bonding operation, thelaser light source 114 passes through theswitching unit 102a, thecarrier substrate 140, theadhesive layer 142 and themicro LEDs 130R, 130G, 130B, so that the pads on themicro LEDs 130R, 130G, 130B (such as tin pads) are melted and bonded to the thinfilm transistor substrate 150 .

請同時參照第1圖和第3圖，第3圖為根據本揭示內容之一些實施方式所繪示的巨量轉移裝置的立體示意圖。詳細來說，第3圖為第1圖的立體示意圖。為了圖示清楚起見，第1圖中的一些元件沒有繪示於第3圖中，且第1圖中的micro LED於第3圖中繪示為簡化的長方體。Please refer to FIG. 1 and FIG. 3 at the same time. FIG. 3 is a schematic perspective view of a mass transfer device according to some embodiments of the present disclosure. In detail, FIG. 3 is a schematic perspective view of FIG. 1 . For clarity of illustration, some components in Fig. 1 are not shown in Fig. 3, and the micro LED in Fig. 1 is shown as a simplified cuboid in Fig. 3 .

請參照第4圖，第4圖為根據本揭示內容之一些實施方式所繪示的選擇性切換式光罩100的線路圖。選擇性切換式光罩100包含以陣列排列的複數個切換單元102及佈線，其中切換單元102包含切換單元102a、102b、102c。須說明的是，本案圖式將雷射光112、114可穿過的切換單元102a繪示為沒有網點的長方體，雷射光112、114不可穿過的切換單元102b繪示為密集網點(類似黑色)的長方體，雷射光112、114可部分穿過的切換單元102c繪示為稀疏網點(類似灰色)的長方體。以下將搭配圖式詳細描述選擇性切換式光罩100的各種變化實施方式。Please refer to FIG. 4 , which is a circuit diagram of a selectivelyswitchable reticle 100 according to some embodiments of the present disclosure. The selectivelyswitchable photomask 100 includes a plurality of switchingunits 102 and wiring arranged in an array, wherein theswitching unit 102 includes switchingunits 102a, 102b, 102c. It should be noted that theswitching unit 102a through which thelaser light 112, 114 can pass is shown as a cuboid without dots, and theswitching unit 102b through which thelaser light 112, 114 cannot pass is shown as a dense dot (similar to black) , theswitching unit 102c through which thelaser light 112 and 114 can partially pass is shown as a cuboid with sparse dots (similar to gray). Various variant implementations of the selectivelyswitchable mask 100 will be described in detail below with reference to the drawings.

第5圖至第7圖為根據本揭示內容之一些實施方式所繪示的選擇性切換式光罩的剖面示意圖。詳細來說，第5圖至第7圖繪示第4圖的區域R的選擇性切換式光罩的剖面示意圖。區域R包含左側的切換單元102a以及右側的切換單元102b。應了解到的是，為圖式簡化起見，第4圖中的一些元件沒有繪示於第5圖至第7圖中(例如佈線)。5 to 7 are schematic cross-sectional views of selectively switchable reticles according to some embodiments of the present disclosure. In detail, FIGS. 5 to 7 illustrate schematic cross-sectional views of the selectively switchable mask in the region R of FIG. 4 . The region R includes theswitching unit 102a on the left and theswitching unit 102b on the right. It should be understood that, for the sake of simplification of the drawings, some components (such as wiring) in Fig. 4 are not shown in Figs. 5-7.

請參照第5圖，其為根據本揭示內容之一些實施方式所繪示的選擇性切換式光罩100A的剖面示意圖。選擇性切換式光罩100A包含左側的切換單元102a以及右側的切換單元102b。選擇性切換式光罩100A包含第一基板510、薄膜電晶體元件520、鈍化膜530、像素電極540、第二基板550、共用電極560、遮光元件570、可切換光穿透層580和間隔件590。第一基板510與第二基板550相對設置，且第一基板510與第二基板550之間設置有薄膜電晶體元件520、鈍化膜530、像素電極540、共用電極560、遮光元件570、可切換光穿透層580和間隔件590。Please refer to FIG. 5 , which is a schematic cross-sectional view of a selectivelyswitchable mask 100A according to some embodiments of the present disclosure. The selectivelyswitchable mask 100A includes aleft switch unit 102a and aright switch unit 102b. The selectivelyswitchable photomask 100A includes afirst substrate 510, a thinfilm transistor element 520, apassivation film 530, apixel electrode 540, asecond substrate 550, acommon electrode 560, alight shielding element 570, a switchable light-transmittinglayer 580 andspacers 590. Thefirst substrate 510 is opposite to thesecond substrate 550, and a thinfilm transistor element 520, apassivation film 530, apixel electrode 540, acommon electrode 560, alight shielding element 570, and a switchable Light passes through thelayer 580 and thespacer 590 .

如第5圖所示，薄膜電晶體元件520設置於第一基板510上，且薄膜電晶體元件520包含閘極522、源極/汲極528、通道層526以及位於通道層526和閘極522之間的閘極絕緣層524。鈍化膜530設置於薄膜電晶體元件520上。詳細來說，鈍化膜530覆蓋通道層526、源極/汲極528、閘極絕緣層524的上表面和/或側壁。閘極絕緣層524沿著第一基板510上方延伸並連續地橫跨切換單元102a和切換單元102b。鈍化膜530沿著閘極絕緣層524上方延伸並連續地橫跨切換單元102a和切換單元102b。選擇性切換式光罩100A還包含第一金屬層523和第二金屬層529。第一金屬層523與閘極522電性連接，且第二金屬層529與源極/汲極528電性連接。在一些實施方式中，閘極522和/或源極/汲極528可由鋁(Al)、銀(Ag)、銅(Cu)、鉬(Mo)、鉻(Cr)、鈦(Ti)、鉭(Ta)、或其合金所組成的單層結構。在其他實施方式中，閘極522和/或源極/汲極528可以是多層結構，例如Cu/Mo、Al/Mo、Al/Nd、Mo/W、Mo/Cu/Mo、Mo/Al/Mo、Ti/Cu/Ti、Ti/Al/Ti。在一些實施方式中，閘極522和/或源極/汲極528具有約0.3

m和約1.0

m之間的厚度(在方向X上)，例如0.4、0.5、0.6、0.7、0.8、0.9

m。在一些實施方式中，通道層526可為非晶矽層或是摻雜有N型摻雜物的非晶矽層，且具有約0.1

m和約0.2

m之間的厚度，例如0.125、0.15、0.175

m。在一些實施方式中，閘極絕緣層524可由氮化矽(SiN_x)或氧化矽(SiO_x)所組成，且具有約0.1

m至約0.3

m之間的厚度，例如0.15、0.2、0.25

m。在一些實施方式中，鈍化膜530可由氮化矽(SiN_x)所組成，且具有約0.1

m至約0.3

m之間的厚度，例如0.15、0.2、0.25

m。As shown in FIG. 5, the thinfilm transistor element 520 is disposed on thefirst substrate 510, and the thinfilm transistor element 520 includes agate 522, a source/drain 528, achannel layer 526, and achannel layer 526 and agate 522. Thegate insulating layer 524 in between. Thepassivation film 530 is disposed on the thinfilm transistor device 520 . In detail, thepassivation film 530 covers the upper surface and/or sidewalls of thechannel layer 526 , the source/drain 528 , and thegate insulating layer 524 . Thegate insulating layer 524 extends above thefirst substrate 510 and continuously crosses theswitching unit 102a and theswitching unit 102b. Thepassivation film 530 extends over thegate insulating layer 524 and continuously spans theswitching unit 102a and theswitching unit 102b. The selectivelyswitchable photomask 100A further includes afirst metal layer 523 and asecond metal layer 529 . Thefirst metal layer 523 is electrically connected to thegate 522 , and thesecond metal layer 529 is electrically connected to the source/drain 528 . In some embodiments, thegate 522 and/or the source/drain 528 can be made of aluminum (Al), silver (Ag), copper (Cu), molybdenum (Mo), chromium (Cr), titanium (Ti), tantalum (Ta), or a single-layer structure composed of its alloys. In other embodiments,gate 522 and/or source/drain 528 may be a multi-layer structure, such as Cu/Mo, Al/Mo, Al/Nd, Mo/W, Mo/Cu/Mo, Mo/Al/ Mo, Ti/Cu/Ti, Ti/Al/Ti. In some implementations, thegate 522 and/or source/drain 528 have about 0.3

m and about 1.0

Thickness between m (in direction X), such as 0.4, 0.5, 0.6, 0.7, 0.8, 0.9

m. In some embodiments, thechannel layer 526 can be an amorphous silicon layer or an amorphous silicon layer doped with an N-type dopant, and has a value of about 0.1

m and about 0.2

Thickness between m, such as 0.125, 0.15, 0.175

m. In some embodiments, thegate insulating layer 524 may be composed of silicon nitride (SiN_x ) or silicon oxide (SiO_x ), and has a thickness of about 0.1

m to about 0.3

Thickness between m, such as 0.15, 0.2, 0.25

m. In some embodiments, thepassivation film 530 may be composed of silicon nitride (SiN_x ), and has a thickness of about 0.1

m to about 0.3

Thickness between m, such as 0.15, 0.2, 0.25

m.

如第5圖所示，像素電極540設置於鈍化膜530上，且每個像素電極540與對應的一個薄膜電晶體元件520相連接。共用電極560設置於第二基板550上，且沿著第二基板550上方延伸並連續地橫跨切換單元102a和切換單元102b。在一些實施方式中，像素電極540和/或共用電極560可由銦錫氧化物(indium tin oxide；ITO)或銦鋅氧化物(indium zinc oxide；IZO)所組成，且具有約0.04

m至約0.2

m之間的厚度，例如0.05、0.08、0.1、0.12、0.15、0.18

m。在一些實施方式中，像素電極540和共用電極560可具有相同的厚度，然而在其他實施方式中，像素電極540和共用電極560可具有不同的厚度。As shown in FIG. 5 , thepixel electrodes 540 are disposed on thepassivation film 530 , and eachpixel electrode 540 is connected to a corresponding thinfilm transistor device 520 . Thecommon electrode 560 is disposed on thesecond substrate 550 , extends along the top of thesecond substrate 550 and continuously crosses theswitching unit 102 a and theswitching unit 102 b. In some embodiments, thepixel electrode 540 and/or thecommon electrode 560 may be composed of indium tin oxide (ITO) or indium zinc oxide (IZO), and have a thickness of about 0.04

m to about 0.2

Thickness between m, such as 0.05, 0.08, 0.1, 0.12, 0.15, 0.18

m. In some embodiments, thepixel electrode 540 and thecommon electrode 560 may have the same thickness, whereas in other embodiments, thepixel electrode 540 and thecommon electrode 560 may have different thicknesses.

遮光元件570設置於第二基板550上，且位於第二基板550和共用電極560之間，其中遮光元件570具有投影P1於第一基板510上，像素電極540具有投影P2於第一基板510上，投影P1與投影P2交錯設置。詳細來說，在方向Z上，遮光元件570設置於薄膜電晶體元件520的上方，因此，當選擇性切換式光罩100A受到來自上方的雷射光112、114照射時，遮光元件570可以保護薄膜電晶體元件520以避免損壞。須說明的是，第5圖的遮光元件570繪示為涵蓋源極/汲極528的寬度，然而，更大寬度的遮光元件570也包含在本揭示內容的實施方式中，例如包含整個薄膜電晶體元件520的寬度。遮光元件570又可稱為黑色矩陣(black matrix；BM)，其可以具有圖案化的矩陣，以形成類似如第4圖所示的陣列。在一些實施方式中，遮光元件570可由黑色樹脂所組成，包含樹脂、碳、光起始劑、溶劑、添加劑(例如添加劑促進劑、固化促進劑和/或表面活性劑)、或其他類似的材料，且具有約1

m至約3

m之間的厚度，例如1.5、2、2.5

m。Theshading element 570 is disposed on thesecond substrate 550 and is located between thesecond substrate 550 and thecommon electrode 560, wherein theshading element 570 has a projection P1 on thefirst substrate 510, and thepixel electrode 540 has a projection P2 on thefirst substrate 510 , projection P1 and projection P2 are set alternately. In detail, in the direction Z, theshading element 570 is arranged above theTFT element 520, so when the selectivelyswitchable mask 100A is irradiated by thelaser light 112, 114 from above, theshading element 570 can protect the thinfilm Transistor element 520 to avoid damage. It should be noted that theshading element 570 in FIG. 5 is shown to cover the width of the source/drain 528, however, theshading element 570 with a larger width is also included in the embodiments of the present disclosure, for example, including the entire thin film electrode. The width of thecrystal element 520 . The light-shieldingelement 570 can also be called a black matrix (black matrix; BM), which can have a patterned matrix to form an array similar to that shown in FIG. 4 . In some embodiments, theshading element 570 can be made of black resin, including resin, carbon, photoinitiator, solvent, additive (such as additive accelerator, curing accelerator and/or surfactant), or other similar materials , and has about 1

m to about 3

Thickness between m, such as 1.5, 2, 2.5

m.

可切換光穿透層580設置於第一基板510和第二基板550之間。詳細來說，可切換光穿透層580設置於像素電極540和共用電極560之間。在一些實施方式中可切換光穿透層580為液晶層，其中液晶層包含液晶分子582a、582b。在一些實施方式中，可切換光穿透層580具有約2

m至約4

m之間的厚度，例如2.5、3、3.5

m。可藉由外部控制器(未繪示)來控制薄膜電晶體元件520的開關以及液晶層中的液晶分子582a、582b。控制薄膜電晶體元件520的開關，並對像素電極540充電而具有像素電壓(V_pixel)，使得像素電壓與共用電極560的共用電壓(V_com)間產生壓差。各個像素電極540所施加的電壓可以由對應的薄膜電晶體元件520控制，因而使得液晶層中的液晶分子582a、582b因應不同程度的壓差，而改變液晶分子582a、582b的傾倒角度，以此控制切換單元102a和切換單元102b中的穿透率。當液晶分子582a整齊排列時，雷射光112、114可以穿過液晶層，如第5圖中的切換單元102a所示。在一些實施方式中，切換單元102a提供約80%至約100%的穿透率，例如約85、90、95%的穿透率。當液晶分子582b不規則排列時，雷射光112、114無法穿過液晶層，如第5圖中的切換單元102b所示。在一些實施方式中，切換單元102b提供小於約30%的穿透率，例如約5、10、15、20、25%的穿透率。在一些實施方式中，切換單元102c提供約30%至約80%的穿透率，例如約40、50、60、70%的穿透率。在進行巨量轉移(如第1圖中之描述)時，切換單元102c可以保護micro LED 130R、130G、130B，免於受到雷射光112的能量照射而破壞micro LED 130R、130G、130B的性能。在進行雷射接合(如第2圖中之描述)時，切換單元102c可以保護薄膜電晶體基板150，免於受到雷射光114的能量照射而破壞薄膜電晶體基板150的性能。The switchable light-transmittinglayer 580 is disposed between thefirst substrate 510 and thesecond substrate 550 . In detail, the switchable light-transmittinglayer 580 is disposed between thepixel electrode 540 and thecommon electrode 560 . In some embodiments, the switchable light-transmittinglayer 580 is a liquid crystal layer, wherein the liquid crystal layer includesliquid crystal molecules 582a, 582b. In some embodiments, the switchable light-transmissive layer 580 has about 2

m to about 4

Thickness between m, such as 2.5, 3, 3.5

m. The switching of theTFT element 520 and theliquid crystal molecules 582a, 582b in the liquid crystal layer can be controlled by an external controller (not shown). The switching of theTFT device 520 is controlled, and thepixel electrode 540 is charged to have a pixel voltage (V_pixel ), so that a voltage difference is generated between the pixel voltage and the common voltage (V_com ) of thecommon electrode 560 . The voltage applied to eachpixel electrode 540 can be controlled by the corresponding thinfilm transistor element 520, so that theliquid crystal molecules 582a, 582b in the liquid crystal layer can change the inclination angle of theliquid crystal molecules 582a, 582b in response to different degrees of voltage difference, thereby The penetration rate in theswitching unit 102a and theswitching unit 102b is controlled. When theliquid crystal molecules 582a are aligned, thelaser light 112 and 114 can pass through the liquid crystal layer, as shown by theswitching unit 102a in FIG. 5 . In some embodiments, theswitching unit 102a provides a penetration rate of about 80% to about 100%, such as a penetration rate of about 85, 90, or 95%. When theliquid crystal molecules 582b are arranged irregularly, thelaser light 112 and 114 cannot pass through the liquid crystal layer, as shown by theswitching unit 102b in FIG. 5 . In some embodiments, theswitching unit 102b provides a penetration rate of less than about 30%, such as a penetration rate of about 5, 10, 15, 20, 25%. In some embodiments, theswitching unit 102c provides a transmittance of about 30% to about 80%, for example, a transmittance of about 40, 50, 60, 70%. When performing mass transfer (as described in FIG. 1 ), theswitching unit 102c can protect themicro LEDs 130R, 130G, 130B from being irradiated by the energy of thelaser light 112 and destroying the performance of themicro LEDs 130R, 130G, 130B. During laser bonding (as described in FIG. 2 ), theswitching unit 102c can protect the thinfilm transistor substrate 150 from being irradiated by the energy of thelaser light 114 and destroying the performance of the thinfilm transistor substrate 150 .

如第5圖所示，間隔件590設置於第一基板510和第二基板550之間。詳細來說，間隔件590設置於共用電極560和鈍化膜530之間，用以提供封裝第一基板510和第二基板550時足夠的支撐力。As shown in FIG. 5 , thespacer 590 is disposed between thefirst substrate 510 and thesecond substrate 550 . In detail, thespacer 590 is disposed between thecommon electrode 560 and thepassivation film 530 to provide sufficient supporting force when packaging thefirst substrate 510 and thesecond substrate 550 .

請同時參照第1圖和第5圖，在一些實施方式中，當第5圖中的選擇性切換式光罩100A當作巨量轉移裝置時，雷射光112可具有約193nm、248nm、266nm、308nm、353nm、355nm或532nm的峰值波長。在一些實施方式中，雷射光源110提供約0.1mW至約10mW的功率範圍，例如0.5、1、1.5、2、3、4、5、6、7、8、9mW。在一些實施方式中，雷射光112的作用時間可為約1ms至約1fs，例如1

s、1ns、1ps。Please refer to FIG. 1 and FIG. 5 at the same time. In some embodiments, when the selectivelyswitchable mask 100A in FIG. Peak wavelength of 308nm, 353nm, 355nm or 532nm. In some embodiments, thelaser light source 110 provides a power ranging from about 0.1 mW to about 10 mW, such as 0.5, 1, 1.5, 2, 3, 4, 5, 6, 7, 8, 9 mW. In some embodiments, the action time of thelaser light 112 can be about 1 ms to about 1 fs, for example, 1

s, 1ns, 1ps.

請同時參照第2圖和第5圖，當第5圖中的選擇性切換式光罩100A當作雷射接合裝置時，雷射光源114可具有約980nm、1064nm或1000-1200nm的峰值波長。在一些實施方式中，雷射光源110提供約1mW至約100mW的功率範圍，例如10、20、30、40、50、60、70、80、90mW。在一些實施方式中，雷射光源114的作用時間可為約0.1ms至約1s，例如1ms、10ms、100ms。Please refer to FIG. 2 and FIG. 5 at the same time. When the selectivelyswitchable mask 100A in FIG. 5 is used as a laser bonding device, thelaser light source 114 can have a peak wavelength of about 980nm, 1064nm or 1000-1200nm. In some embodiments, thelaser light source 110 provides a power ranging from about 1 mW to about 100 mW, such as 10, 20, 30, 40, 50, 60, 70, 80, 90 mW. In some embodiments, the action time of thelaser light source 114 may be about 0.1 ms to about 1 s, such as 1 ms, 10 ms, 100 ms.

請參照第6圖，其為根據本揭示內容之一些實施方式所繪示的選擇性切換式光罩100B的剖面示意圖。第6圖的選擇性切換式光罩100B與第5圖的選擇性切換式光罩100A結構相似，差別在於遮光元件570的位置。選擇性切換式光罩100B的遮光元件570設置於第二基板550之上，且遠離第一基板510，其中遮光元件570具有投影P3於第一基板510上，像素電極540具有投影P2於第一基板510上，投影P3與投影P2交錯設置。須說明的是，第6圖中與第5圖相同或相似之元件被給予相同的符號，並省略相關說明，不再贅述。Please refer to FIG. 6 , which is a schematic cross-sectional view of a selectivelyswitchable mask 100B according to some embodiments of the present disclosure. The selectivelyswitchable mask 100B in FIG. 6 is similar in structure to the selectivelyswitchable mask 100A in FIG. 5 , the difference lies in the position of thelight shielding element 570 . Theshading element 570 of the selectivelyswitchable mask 100B is disposed on thesecond substrate 550 and away from thefirst substrate 510, wherein theshading element 570 has a projection P3 on thefirst substrate 510, and thepixel electrode 540 has a projection P2 on thefirst substrate 510. On thesubstrate 510, projections P3 and projections P2 are alternately arranged. It should be noted that the same or similar components in Fig. 6 and Fig. 5 are given the same symbols, and related descriptions are omitted, and details are not repeated here.

請參照第7圖，其為根據本揭示內容之一些實施方式所繪示的選擇性切換式光罩100C的剖面示意圖。第7圖的選擇性切換式光罩100C與第5圖的選擇性切換式光罩100A結構相似，差別在於遮光元件570的位置。選擇性切換式光罩100C的遮光元件570設置於薄膜電晶體元件520上，其中遮光元件570具有投影P4於第一基板510上，像素電極540具有投影P2於第一基板510上，投影P4與投影P2交錯設置。須說明的是，第7圖中與第5圖相同或相似之元件被給予相同的符號，並省略相關說明，不再贅述。Please refer to FIG. 7 , which is a schematic cross-sectional view of a selectivelyswitchable mask 100C according to some embodiments of the present disclosure. The selectivelyswitchable mask 100C in FIG. 7 is similar in structure to the selectivelyswitchable mask 100A in FIG. 5 , the difference lies in the position of thelight shielding element 570 . Theshading element 570 of the selectivelyswitchable mask 100C is disposed on the thinfilm transistor element 520, wherein theshading element 570 has a projection P4 on thefirst substrate 510, thepixel electrode 540 has a projection P2 on thefirst substrate 510, and the projection P4 and Projection P2 staggered settings. It should be noted that the same or similar components in Fig. 7 and Fig. 5 are given the same symbols, and related descriptions are omitted, and details are not repeated here.

請參照第8圖，其為根據本揭示內容之一些實施方式所繪示的選擇性切換式光罩100D的線路圖。選擇性切換式光罩100D包含以陣列排列的複數個切換單元102及佈線，其中切換單元102包含切換單元102a、102b、102c。須說明的是，本案圖式將雷射光112、114可穿過的切換單元102a繪示為沒有網點的長方體，雷射光112、114不可穿過的切換單元102b繪示為密集網點(類似黑色)的長方體，雷射光112、114可部分穿過的切換單元102c繪示為稀疏網點(類似灰色)的長方體。以下將搭配圖式詳細描述選擇性切換式光罩100的變化實施方式。Please refer to FIG. 8 , which is a circuit diagram of a selectivelyswitchable mask 100D according to some embodiments of the present disclosure. The selectivelyswitchable mask 100D includes a plurality of switchingunits 102 and wirings arranged in an array, wherein theswitching unit 102 includes switchingunits 102a, 102b, and 102c. It should be noted that theswitching unit 102a through which thelaser light 112, 114 can pass is shown as a cuboid without dots, and theswitching unit 102b through which thelaser light 112, 114 cannot pass is shown as a dense dot (similar to black) , theswitching unit 102c through which thelaser light 112 and 114 can partially pass is shown as a cuboid with sparse dots (similar to gray). Variations of the selectivelyswitchable mask 100 will be described in detail below with reference to the drawings.

請參照第9圖，其為根據本揭示內容之一些實施方式所繪示的選擇性切換式光罩100D的剖面示意圖。選擇性切換式光罩100D包含左側的切換單元102a以及右側的切換單元102b。選擇性切換式光罩100D包含第一基板510、控制元件920、可切換光穿透層930、第二基板550和共用電極560。第一基板510與第二基板550相對設置，且第一基板510與第二基板550之間設置有控制元件920、可切換光穿透層930和共用電極560。Please refer to FIG. 9 , which is a schematic cross-sectional view of a selectivelyswitchable mask 100D according to some embodiments of the present disclosure. The selectivelyswitchable mask 100D includes aleft switching unit 102a and aright switching unit 102b. The selectivelyswitchable photomask 100D includes afirst substrate 510 , acontrol element 920 , a switchable light-transmittinglayer 930 , asecond substrate 550 and acommon electrode 560 . Thefirst substrate 510 is disposed opposite to thesecond substrate 550 , and acontrol element 920 , a switchable light-transmittinglayer 930 and acommon electrode 560 are disposed between thefirst substrate 510 and thesecond substrate 550 .

如第9圖所示，控制元件920設置於第一基板510上，且控制元件920包含閘極522、第一金屬層523、閘極絕緣層524、第二金屬層922、鈍化膜924、像素電極926。閘極522和第一金屬層523設置於第一基板510上，閘極絕緣層524設置於閘極522、第一金屬層523和第一基板510上，第二金屬層922設置於閘極絕緣層524上，鈍化膜924設置於第二金屬層922和閘極絕緣層524上，且像素電極926設置於鈍化膜924上。如第9圖所示，閘極絕緣層524沿著第一基板510上方延伸並連續地橫跨切換單元102a和切換單元102b，鈍化膜924沿著閘極絕緣層524上方延伸並橫跨切換單元102a和切換單元102b。須說明的是，第9圖中與第5圖相同或相似之元件被給予相同的符號，並省略相關說明，不再贅述。在一些實施方式中，第二金屬層922具有與閘極522相同或相似的特徵。在一些實施方式中，鈍化膜924具有與鈍化膜530相同或相似的特徵。像素電極926具有與像素電極540相同或相似的特徵。As shown in FIG. 9, thecontrol element 920 is disposed on thefirst substrate 510, and thecontrol element 920 includes agate 522, afirst metal layer 523, agate insulating layer 524, asecond metal layer 922, apassivation film 924, and apixel Electrode 926. Thegate 522 and thefirst metal layer 523 are arranged on thefirst substrate 510, thegate insulating layer 524 is arranged on thegate 522, thefirst metal layer 523 and thefirst substrate 510, and thesecond metal layer 922 is arranged on thegate insulating layer 524. On thelayer 524 , apassivation film 924 is disposed on thesecond metal layer 922 and thegate insulating layer 524 , and thepixel electrode 926 is disposed on thepassivation film 924 . As shown in FIG. 9, thegate insulating layer 524 extends along the top of thefirst substrate 510 and continuously spans theswitching unit 102a and theswitching unit 102b, and thepassivation film 924 extends along the top of thegate insulating layer 524 and spans the switching unit. 102a and switchingunit 102b. It should be noted that the same or similar elements in Fig. 9 and Fig. 5 are given the same symbols, and related descriptions are omitted, and details are not repeated here. In some embodiments, thesecond metal layer 922 has the same or similar characteristics as thegate 522 . In some embodiments,passivation film 924 has the same or similar features aspassivation film 530 . Thepixel electrode 926 has the same or similar features as thepixel electrode 540 .

請繼續參照第9圖，選擇性切換式光罩100D包含可切換光穿透層930，其中可切換光穿透層930為電致變色層。在一些實施方式中，電致變色層是選自於由WO₃、MoO₃、Nb₂O₅、TiO₂、NiO、IrO₂、C₁₈Fe₇N₁₈、V₂O₅、Co₂O₃、Rh₂O₃、紫精、酞菁、聚噻吩類及其衍生物、紫羅精類、四硫富瓦烯、金屬酞菁類化合物、聚二氧乙烯噻吩、聚二氧乙基噻吩-聚苯乙烯磺酸複合物所組成的群組所組成。在一些實施方式中，電致變色層具有約1

m至約10

m之間的厚度，例如2、3、4、5、6、7、8、9

m。可切換光穿透層930更包含電致變色膜932、電解質934和離子存儲導體膜936。利用第二金屬層922或第一金屬層523對像素電極926提供像素電壓(V_pixel)，像素電壓與共用電極560的共用電壓(V_com)間產生壓差，使得電致變色膜932產生氧化或還原反應，以此控制切換單元102a和切換單元102b中的穿透率。在一些實施方式中，當電致變色膜932產生氧化反應時，電致變色膜932中的電致變色材料會氧化成透明的膜，因此雷射光112、114可以穿過電致變色層，如第9圖中的切換單元102a所示。在一些實施方式中，切換單元102a提供約60%至約80%的穿透率。當電致變色膜932產生還原反應時，電致變色膜932中的電致變色材料會還原成有顏色(例如藍色)的膜，因此雷射光112、114無法穿過電致變色層，如第9圖中的切換單元102b所示。須說明的是，電致變色層的變色情況會依照材料性質而有不同的變色方式，在其他實施方式中，當電致變色層產生氧化反應時會轉換成有顏色的膜，而當電致變色層產生還原反應時會轉換成透明的膜。在一些實施方式中，切換單元102a提供約60%至約80%的穿透率，例如約65、70、75%的穿透率。在一些實施方式中，切換單元102b提供小於約20%的穿透率，例如約5、10、15%的穿透率。在一些實施方式中，切換單元102c提供約20%至約60%的穿透率，例如約30、40、50%的穿透率。在進行巨量轉移(如第1圖中之描述)時，切換單元102c可以保護micro LED 130R、130G、130B，免於受到雷射光112的能量照射而破壞micro LED 130R、130G、130B的性能。在進行雷射接合(如第2圖中之描述)時，切換單元102c可以保護薄膜電晶體基板150，免於受到雷射光114的能量照射而破壞薄膜電晶體基板150的性能。Please continue to refer to FIG. 9 , the selectivelyswitchable photomask 100D includes a switchable light-transmittinglayer 930 , wherein the switchable light-transmittinglayer 930 is an electrochromic layer. In some embodiments, the electrochromic layer is selected from WO₃ , MoO₃ , Nb₂ O₅ , TiO₂ , NiO, IrO₂ , C₁₈ Fe₇ N₁₈ , V₂ O₅ , Co₂ O₃ , Rh₂ O₃ , viologen, phthalocyanine, polythiophenes and their derivatives, viologens, tetrathiafulvalene, metal phthalocyanines, polyoxyethylene thiophene, polydioxyethylene thiophene- Composed of the group consisting of polystyrene sulfonic acid complexes. In some embodiments, the electrochromic layer has about 1

m to about 10

Thickness between m, such as 2, 3, 4, 5, 6, 7, 8, 9

m. The switchable light-transmittinglayer 930 further includes anelectrochromic film 932 , anelectrolyte 934 and an ionstorage conductor film 936 . Using thesecond metal layer 922 or thefirst metal layer 523 to provide a pixel voltage (V_pixel ) to thepixel electrode 926, a voltage difference is generated between the pixel voltage and the common voltage (V_com ) of thecommon electrode 560, so that theelectrochromic film 932 is oxidized Or reduction reaction, so as to control the penetration rate in theswitching unit 102a and theswitching unit 102b. In some embodiments, when theelectrochromic film 932 undergoes an oxidation reaction, the electrochromic material in theelectrochromic film 932 will oxidize into a transparent film, so thelaser light 112, 114 can pass through the electrochromic layer, such as Theswitching unit 102a in Fig. 9 is shown. In some embodiments, theswitching unit 102a provides a transmittance of about 60% to about 80%. When the reduction reaction occurs in theelectrochromic film 932, the electrochromic material in theelectrochromic film 932 will be reduced to a colored (such as blue) film, so thelaser light 112, 114 cannot pass through the electrochromic layer, such as Theswitching unit 102b in Fig. 9 is shown. It should be noted that the discoloration of the electrochromic layer will change in different ways according to the properties of the material. In other embodiments, when the electrochromic layer undergoes an oxidation reaction, it will be converted into a colored film, and when the The color-changing layer transforms into a transparent film when a reduction reaction occurs. In some embodiments, theswitching unit 102a provides a penetration rate of about 60% to about 80%, such as a penetration rate of about 65, 70, or 75%. In some embodiments, theswitching unit 102b provides a transmittance of less than about 20%, such as about 5, 10, 15%. In some embodiments, theswitching unit 102c provides a penetration rate of about 20% to about 60%, such as a penetration rate of about 30, 40, or 50%. When performing mass transfer (as described in FIG. 1 ), theswitching unit 102c can protect themicro LEDs 130R, 130G, 130B from being irradiated by the energy of thelaser light 112 and destroying the performance of themicro LEDs 130R, 130G, 130B. During laser bonding (as described in FIG. 2 ), theswitching unit 102c can protect the thinfilm transistor substrate 150 from being irradiated by the energy of thelaser light 114 and destroying the performance of the thinfilm transistor substrate 150 .

請同時參照第3圖、第5圖、第6圖、第7圖和第9圖，巨量轉移裝置更包含設置於選擇性切換式光罩100A、100B、100C、100D之下的載體基板120B以及設置於載體基板120B下的黏著層122B，其中載體基板120B與黏著層122B直接接觸。關於將micro LED 130R、130G、130B轉移到載體基板140上的詳細描述請參照第1圖的敘述。Please refer to FIG. 3, FIG. 5, FIG. 6, FIG. 7 and FIG. 9 at the same time. The mass transfer device further includes acarrier substrate 120B disposed under the selectivelyswitchable photomasks 100A, 100B, 100C, and 100D. And theadhesive layer 122B disposed under thecarrier substrate 120B, wherein thecarrier substrate 120B is in direct contact with theadhesive layer 122B. For the detailed description of transferring themicro LEDs 130R, 130G, 130B onto thecarrier substrate 140 , please refer to the description of FIG. 1 .

請參照第10A圖、第10B圖和第10C圖，其為根據本揭示內容之一些實施方式所繪示的巨量轉移裝置的立體示意圖。第10A圖、第10B圖和第10C圖為依據第3圖的基礎下，加入可移動式遮罩1000，其設置於選擇性切換式光罩100和載體基板120R、120G、120B之間。詳細來說，在第10A圖中，載體基板120R以及載體基板120R下的黏著層122R設置於可移動式遮罩1000之下。在第10B圖中，載體基板120G以及載體基板120G下的黏著層122G設置於可移動式遮罩1000之下。在第10C圖中，載體基板120B以及載體基板120B下的黏著層122B設置於可移動式遮罩1000之下。Please refer to FIG. 10A , FIG. 10B and FIG. 10C , which are three-dimensional schematic diagrams of a mass transfer device according to some embodiments of the present disclosure. FIG. 10A, FIG. 10B and FIG. 10C are based on the basis of FIG. 3, adding amovable mask 1000, which is disposed between the selectivelyswitchable mask 100 and thecarrier substrates 120R, 120G, 120B. In detail, in FIG. 10A , thecarrier substrate 120R and theadhesive layer 122R under thecarrier substrate 120R are disposed under themovable mask 1000 . In FIG. 10B , thecarrier substrate 120G and theadhesive layer 122G under thecarrier substrate 120G are disposed under themovable mask 1000 . In FIG. 10C , thecarrier substrate 120B and theadhesive layer 122B under thecarrier substrate 120B are disposed under themovable mask 1000 .

請參照第11圖，其為根據本揭示內容之一些實施方式所繪示第10A圖的巨量轉移裝置的剖面示意圖。詳細來說，將可移動式遮罩1000設置於選擇性切換式光罩100A之下。可移動式遮罩1000具有彼此分離的複數個孔洞1010，像素電極540具有投影P2於第一基板510上，複數個孔洞1010的每一者具有投影P5於第一基板510上，投影P2大於投影P5，且投影P5位於投影P2中。須說明的是，第11圖僅示出選擇性切換式光罩100A的剖面示意圖，然而，其他選擇性切換式光罩100B、100C、100D也可置換於第11圖中，將可移動式遮罩1000分別設置於選擇性切換式光罩100B、100C、100D之下。Please refer to FIG. 11 , which is a schematic cross-sectional view of the mass transfer device shown in FIG. 10A according to some embodiments of the present disclosure. In detail, themovable mask 1000 is disposed under the selectivelyswitchable mask 100A. Themovable mask 1000 has a plurality ofholes 1010 separated from each other, thepixel electrode 540 has a projection P2 on thefirst substrate 510, each of the plurality ofholes 1010 has a projection P5 on thefirst substrate 510, and the projection P2 is larger than the projection P5, and the projection P5 lies in the projection P2. It should be noted that Figure 11 only shows a schematic cross-sectional view of the selectivelyswitchable mask 100A, however, other selectivelyswitchable masks 100B, 100C, and 100D can also be replaced in Figure 11, and the movable mask Themask 1000 is disposed under the selectivelyswitchable photomasks 100B, 100C, and 100D, respectively.

如第10A圖所示，將載體基板120R設置於可移動式遮罩1000之下，並將micro LED 130R轉移到載體基板140上。接著，移動可移動式遮罩1000，如第10B圖所示，將載體基板120G設置於可移動式遮罩1000之下，並將micro LED 130G轉移到載體基板140上。最後，再移動可移動式遮罩1000，如第10C圖所示，將載體基板120B設置於可移動式遮罩1000之下，並將micro LED 130B轉移到載體基板140上。藉由控制可移動式遮罩1000的位置分別將micro LED 130R、130G、130B轉移到載體基板140上。完成如第10A圖、第10B圖和第10C圖之巨量轉移，形成包含有micro LED 130R、130G、130B的陣列。As shown in FIG. 10A , thecarrier substrate 120R is placed under themovable mask 1000 , and themicro LED 130R is transferred onto thecarrier substrate 140 . Next, move themovable mask 1000 , as shown in FIG. 10B , place thecarrier substrate 120G under themovable mask 1000 , and transfer themicro LED 130G to thecarrier substrate 140 . Finally, move themovable mask 1000 again, as shown in FIG. 10C , place thecarrier substrate 120B under themovable mask 1000 , and transfer themicro LED 130B to thecarrier substrate 140 . Themicro LEDs 130R, 130G, 130B are respectively transferred onto thecarrier substrate 140 by controlling the position of themovable mask 1000 . The mass transfer as shown in FIG. 10A, FIG. 10B and FIG. 10C is completed to form an array includingmicro LEDs 130R, 130G, and 130B.

在一些實施方式中，本揭示內容的選擇性切換式光罩100A、100B、100C、100D可用於巨量轉移裝置上，透過雷射光112選擇性地將欲轉移的micro LED轉移到載體基板140上，如第1圖所示。須說明的是，雷射光112可穿過的切換單元102a繪示為沒有網點，雷射光112不可穿過的切換單元102b繪示為密集網點(類似黑色)，雷射光112可部分穿過的切換單元102c繪示為稀疏網點(類似灰色)，其中當雷射光112不可穿過或是可部分穿過切換單元時，原本固定在載體基板120R、120G、120B的micro LED 130R、130G、130B不會脫落至載體基板140上。In some embodiments, the selectivelyswitchable photomasks 100A, 100B, 100C, and 100D of the present disclosure can be used in a mass transfer device to selectively transfer micro LEDs to be transferred onto acarrier substrate 140 throughlaser light 112 , as shown in Figure 1. It should be noted that theswitching unit 102a through which thelaser light 112 can pass is shown as having no dots, theswitching unit 102b through which thelaser light 112 cannot pass is shown as dense dots (similar to black), and the switching unit through which thelaser light 112 can partially pass Theunit 102c is shown as a sparse dot (like gray), wherein when thelaser light 112 cannot pass through or partially passes through the switching unit, themicro LEDs 130R, 130G, 130B originally fixed on thecarrier substrate 120R, 120G, 120B will not fall off onto thecarrier substrate 140 .

在其他實施方式中，本揭示內容的選擇性切換式光罩100A、100B、100C、100D可用於雷射接合操作上，透過雷射光源114選擇性地將micro LED接合並固定於薄膜電晶體基板150上，如第2圖所示。須說明的是，雷射光114可穿過的切換單元102a繪示為沒有網點，雷射光源114不可穿過的切換單元102b繪示為密集網點(類似黑色)，雷射光源114可部分穿過的切換單元102c繪示為稀疏網點(類似灰色)，其中當雷射光源114不可穿過或是可部分穿過切換單元時，未達micro LED 130R、130G、130B的墊片(例如錫墊片)之熔點，因此不會接合於薄膜電晶體基板150上。In other embodiments, the selectivelyswitchable photomasks 100A, 100B, 100C, and 100D of the present disclosure can be used in laser bonding operations to selectively bond and fix micro LEDs to thin film transistor substrates through thelaser light source 114 150, as shown in Figure 2. It should be noted that theswitching unit 102a through which thelaser light 114 can pass is shown as having no dots, and theswitching unit 102b through which thelaser light source 114 cannot pass is shown as dense dots (similar to black), and thelaser light source 114 can partially pass through Theswitching unit 102c is shown as sparse dots (similar to gray), wherein when thelaser light source 114 cannot pass through or can partially pass through the switching unit, the pads (such as tin pads) of themicro LEDs 130R, 130G, 130B are not reached ) melting point, so it will not be bonded to the thinfilm transistor substrate 150.

請參照第12圖，其為根據本揭示內容之一些實施方式所繪示的巨量轉移裝置的立體示意圖。詳細來說，選擇性切換式光罩100E更包含黏著層122R，黏著層122R設置於選擇性切換式光罩100E下且與選擇性切換式光罩100E直接接觸。更詳細來說，選擇性切換式光罩100E當作micro LED 130R的載體基板120R，micro LED 130R透過黏著層122R將micro LED 130R固定在選擇性切換式光罩100E上。在一實施方式中，選擇性切換式光罩100E上的micro LED 130R轉移到載體基板140上。在一實施方式中，選擇性切換式光罩100E上的micro LED 130G轉移到載體基板140上。在一實施方式中，選擇性切換式光罩100E上的micro LED 130B轉移到載體基板140上。關於將micro LED 130R、130G、130B轉移到載體基板140上的詳細描述請參照第1圖的敘述。Please refer to FIG. 12 , which is a schematic perspective view of a mass transfer device according to some embodiments of the present disclosure. In detail, the selectivelyswitchable mask 100E further includes anadhesive layer 122R, and theadhesive layer 122R is disposed under the selectivelyswitchable mask 100E and is in direct contact with the selectivelyswitchable mask 100E. In more detail, the selectivelyswitchable photomask 100E serves as thecarrier substrate 120R of themicro LED 130R, and themicro LED 130R fixes themicro LED 130R on the selectivelyswitchable photomask 100E through theadhesive layer 122R. In one embodiment, themicro LEDs 130R on the selectivelyswitchable mask 100E are transferred to thecarrier substrate 140 . In one embodiment, themicro LEDs 130G on the selectivelyswitchable mask 100E are transferred to thecarrier substrate 140 . In one embodiment, themicro LED 130B on the selectivelyswitchable mask 100E is transferred to thecarrier substrate 140 . For the detailed description of transferring themicro LEDs 130R, 130G, 130B onto thecarrier substrate 140 , please refer to the description of FIG. 1 .

本揭示內容的選擇性切換式光罩100E可用於巨量轉移裝置上，透過雷射光112選擇性地將欲轉移的micro LED轉移到載體基板140上，如第1圖所示。The selectivelyswitchable photomask 100E of the present disclosure can be used in a mass transfer device to selectively transfer micro LEDs to be transferred onto acarrier substrate 140 through alaser light 112 , as shown in FIG. 1 .

綜上所述，本揭示內容提供了一種可用於巨量轉移操作以及接合操作的選擇性切換式光罩。在進行巨量轉移操作時，將選擇性切換式光罩設置於雷射光源之下，可以將大量的micro LED轉移到載體基板上，從而提升生產效率。在進行接合操作時，將選擇性切換式光罩設置於雷射光源之下，可以將大量的micro LED接合到薄膜電晶體基板，從而提升生產效率。由於本揭示內容的選擇性切換式光罩可同時應用於巨量轉移和接合操作，因此，可以大幅降低製造成本，並進一步提升整體的生產效率。In summary, the present disclosure provides a selectively switchable reticle that can be used for bulk transfer operations as well as splicing operations. When performing mass transfer operations, placing a selectively switchable mask under the laser light source can transfer a large number of micro LEDs to the carrier substrate, thereby improving production efficiency. During the bonding operation, a selectively switchable mask is placed under the laser light source, so that a large number of micro LEDs can be bonded to the thin film transistor substrate, thereby improving production efficiency. Since the selectively switchable photomask of the present disclosure can be applied to both mass transfer and bonding operations, the manufacturing cost can be greatly reduced and the overall production efficiency can be further improved.

對於所屬技術領域人員來說，顯而易見的是，在不脫離本揭示的範圍或精神的情況下，可以對本揭示的結構進行各種修改和變化。鑑於前述內容，本揭示意圖涵蓋落入所附申請專利範圍內的本揭示的修改和變化。It will be apparent to those skilled in the art that various modifications and changes can be made in the structures of the present disclosure without departing from the scope or spirit of the disclosure. In view of the foregoing, this disclosure intends to cover modifications and variations of the present disclosure that come within the scope of the appended claims.

100:選擇性切換式光罩 100A:選擇性切換式光罩 100B:選擇性切換式光罩 100C:選擇性切換式光罩 100D:選擇性切換式光罩 100E:選擇性切換式光罩 102:切換單元 102a:切換單元 102b:切換單元 102c:切換單元 110:雷射光源 112:雷射光 114:雷射光 120R:載體基板 120G:載體基板 120B:載體基板 122R:黏著層 122G:黏著層 122B:黏著層 130R:micro LED 130G:micro LED 130B:micro LED 140:載體基板 142:黏著層 150:薄膜電晶體基板 510:第一基板 520:薄膜電晶體元件 522:閘極 523:第一金屬層 524:閘極絕緣層 526:通道層 528:源極/汲極 529:第二金屬層 530:鈍化膜 540:像素電極 550:第二基板 560:共用電極 570:遮光元件 580:可切換光穿透層 582a:液晶分子 582b:液晶分子 590:間隔件 920:控制元件 922:第二金屬層 924:鈍化膜 926:像素電極 930:可切換光穿透層 932:電致變色膜 934:電解質 936:離子存儲導體膜 1000:可移動式遮罩 1010:孔洞 R:區域 P1:投影 P2:投影 P3:投影 P4:投影 P5:投影 X:方向 Z:方向100: Selective switching mask 100A: Selective switching mask 100B: Selective switching mask 100C: Selective switching mask 100D: Selective switching mask 100E: Selective switching mask 102:Switch unit 102a: switching unit 102b: switching unit 102c: switching unit 110: Laser light source 112:laser light 114:laser light 120R: carrier substrate 120G: carrier substrate 120B: carrier substrate 122R: Adhesive layer 122G: Adhesive layer 122B: Adhesive layer 130R: micro LED 130G: micro LED 130B:micro LED 140: carrier substrate 142: Adhesive layer 150: thin film transistor substrate 510: first substrate 520: thin film transistor components 522: Gate 523: the first metal layer 524: gate insulation layer 526: channel layer 528: source/drain 529: second metal layer 530: passivation film 540: pixel electrode 550: second substrate 560: common electrode 570: shading element 580: Switchable Light Penetrating Layer 582a: liquid crystal molecules 582b: liquid crystal molecules 590: spacer 920: control element 922: second metal layer 924: passivation film 926: pixel electrode 930: switchable light-transmitting layer 932: Electrochromic film 934:Electrolyte 936: Ion Storage Conductor Membrane 1000: removable mask 1010: hole R: area P1: projection P2: projection P3: projection P4: projection P5: projection X: direction Z: Direction

當結合隨附圖式進行閱讀時，本揭示內容之詳細描述將能被充分地理解。應注意，根據業界標準實務，各特徵並非按比例繪製且僅用於圖示目的。事實上，出於論述清晰之目的，可任意增加或減小各特徵之尺寸。 第1圖為根據本揭示內容之一些實施方式所繪示的巨量轉移裝置的剖面示意圖。 第2圖為根據本揭示內容之一些實施方式所繪示的雷射接合裝置的剖面示意圖。 第3圖為根據本揭示內容之一些實施方式所繪示的巨量轉移裝置的立體示意圖。 第4圖為根據本揭示內容之一些實施方式所繪示的選擇性切換式光罩的線路圖。 第5圖至第7圖為根據本揭示內容之一些實施方式所繪示的選擇性切換式光罩的剖面示意圖。 第8圖為根據本揭示內容之一些實施方式所繪示的選擇性切換式光罩的線路圖。 第9圖為根據本揭示內容之一些實施方式所繪示的選擇性切換式光罩的剖面示意圖。 第10A圖、第10B圖和第10C圖為根據本揭示內容之一些實施方式所繪示的巨量轉移裝置的立體示意圖。 第11圖為根據本揭示內容之一些實施方式所繪示第10A圖的巨量轉移裝置的剖面示意圖。 第12圖為根據本揭示內容之一些實施方式所繪示的巨量轉移裝置的立體示意圖。The detailed description of the present disclosure will be best understood when read in conjunction with the accompanying drawings. It should be noted that, in accordance with standard industry practice, features are not drawn to scale and are used for illustration purposes only. In fact, the dimensions of the various features may be arbitrarily increased or decreased for clarity of discussion. FIG. 1 is a schematic cross-sectional view of a mass transfer device according to some embodiments of the present disclosure. FIG. 2 is a schematic cross-sectional view of a laser bonding device according to some embodiments of the present disclosure. FIG. 3 is a schematic perspective view of a mass transfer device according to some embodiments of the present disclosure. FIG. 4 is a circuit diagram of a selectively switchable reticle according to some embodiments of the present disclosure. 5 to 7 are schematic cross-sectional views of selectively switchable reticles according to some embodiments of the present disclosure. FIG. 8 is a circuit diagram of a selectively switchable reticle according to some embodiments of the present disclosure. FIG. 9 is a schematic cross-sectional view of a selectively switchable reticle according to some embodiments of the present disclosure. 10A, 10B, and 10C are schematic perspective views of a mass transfer device according to some embodiments of the present disclosure. FIG. 11 is a schematic cross-sectional view of the mass transfer device shown in FIG. 10A according to some embodiments of the present disclosure. FIG. 12 is a schematic perspective view of a mass transfer device according to some embodiments of the present disclosure.

國內寄存資訊(請依寄存機構、日期、號碼順序註記) 無 國外寄存資訊(請依寄存國家、機構、日期、號碼順序註記) 無Domestic deposit information (please note in order of depositor, date, and number) none Overseas storage information (please note in order of storage country, institution, date, and number) none

100:選擇性切換式光罩100: Selective switching mask

110:雷射光源110: Laser light source

120B:載體基板120B: carrier substrate

122B:黏著層122B: Adhesive layer

130B:micro LED130B:micro LED

140:載體基板140: carrier substrate

142:黏著層142: Adhesive layer

Claims (16)

Translated fromChinese

一種供一雷射光源使用的一選擇性切換式光罩，包含： 一切換單元，設置於該雷射光源之下，其中該切換單元包含: 一第一基板和與該第一基板相對的一第二基板； 一像素電極，設置於該第一基板上； 一共用電極，設置於該第二基板上；以及 一可切換光穿透層，設置於該像素電極與該共用電極之間。A selectively switchable mask for a laser light source, comprising: A switching unit is arranged under the laser light source, wherein the switching unit includes: a first substrate and a second substrate opposite to the first substrate; a pixel electrode disposed on the first substrate; a common electrode disposed on the second substrate; and A switchable light-transmitting layer is arranged between the pixel electrode and the common electrode.如請求項1所述之選擇性切換式光罩，其中該可切換光穿透層為一液晶層。The selectively switchable photomask according to claim 1, wherein the switchable light-transmitting layer is a liquid crystal layer.如請求項2所述之選擇性切換式光罩，其中該切換單元提供小於約30%的穿透率。The selectively switchable mask of claim 2, wherein the switch unit provides a transmittance of less than about 30%.如請求項2所述之選擇性切換式光罩，其中該切換單元提供約30%至約80%的穿透率。The selectively switchable mask according to claim 2, wherein the switch unit provides a transmittance of about 30% to about 80%.如請求項2所述之選擇性切換式光罩，其中該切換單元提供約80%至約100%的穿透率。The selectively switchable mask according to claim 2, wherein the switch unit provides a transmittance of about 80% to about 100%.如請求項2所述之選擇性切換式光罩，更包含一遮光元件，設置於該第二基板和該共用電極之間，其中該遮光元件具有一第一投影於該第一基板上，該像素電極具有一第二投影於該第一基板上，該第一投影與該第二投影交錯設置。The selectively switchable photomask as described in Claim 2 further comprises a light shielding element disposed between the second substrate and the common electrode, wherein the light shielding element has a first projection on the first substrate, the The pixel electrode has a second projection on the first substrate, and the first projection and the second projection are arranged alternately.如請求項2所述之選擇性切換式光罩，更包含一遮光元件，設置於該第二基板之上，其中該遮光元件具有一第一投影於該第一基板上，該像素電極具有一第二投影於該第一基板上，該第一投影與該第二投影交錯設置。The selectively switchable photomask as described in claim 2 further includes a light-shielding element disposed on the second substrate, wherein the light-shielding element has a first projection on the first substrate, and the pixel electrode has a The second projection is on the first substrate, and the first projection and the second projection are arranged alternately.如請求項2所述之選擇性切換式光罩，更包含： 一薄膜電晶體元件，設置於該第一基板上，且與該像素電極分離；以及 一遮光元件，設置於該薄膜電晶體元件上，其中該遮光元件具有一第一投影於該第一基板上，該像素電極具有一第二投影於該第一基板上，該第一投影與該第二投影交錯設置。The selectively switchable photomask as described in Claim 2 further includes: a thin film transistor element disposed on the first substrate and separated from the pixel electrode; and A light-shielding element disposed on the thin film transistor element, wherein the light-shielding element has a first projection on the first substrate, the pixel electrode has a second projection on the first substrate, the first projection and the first projection The second projection is interleaved.如請求項1所述之選擇性切換式光罩，其中該可切換光穿透層為一電致變色層。The selectively switchable photomask as claimed in claim 1, wherein the switchable light-transmitting layer is an electrochromic layer.如請求項9所述之選擇性切換式光罩，其中該切換單元提供小於約20%的穿透率。The selectively switchable mask of claim 9, wherein the switch unit provides a transmittance of less than about 20%.如請求項9所述之選擇性切換式光罩，其中該切換單元提供約20%至約60%的穿透率。The selectively switchable photomask as claimed in claim 9, wherein the switch unit provides a transmittance of about 20% to about 60%.如請求項9所述之選擇性切換式光罩，其中該切換單元提供約60%至約80%的穿透率。The selectively switchable mask according to claim 9, wherein the switch unit provides a transmittance of about 60% to about 80%.一種用於處理微型發光二極體的系統，包含： 如請求項1-12任一項所述之選擇性切換式光罩；以及 一載體基板，設置於該選擇性切換式光罩之下。A system for processing miniature light emitting diodes comprising: The selectively switchable photomask as described in any one of Claims 1-12; and A carrier substrate is arranged under the selectively switchable photomask.如請求項13所述之系統，更包含一黏著層，設置於該載體基板下且與該載體基板接觸。The system of claim 13, further comprising an adhesive layer disposed under the carrier substrate and in contact with the carrier substrate.如請求項13所述之系統，更包含一可移動式遮罩，設置於該切換單元與該載體基板之間，該可移動式遮罩具有彼此分離的複數個孔洞，其中該像素電極具有一第一投影於該第一基板上，該些孔洞的每一者具有一第二投影於該第一基板上，該第一投影大於該第二投影，且該第二投影位於該第一投影中。The system as described in claim 13, further comprising a movable mask disposed between the switching unit and the carrier substrate, the movable mask has a plurality of holes separated from each other, wherein the pixel electrode has a a first projection on the first substrate, each of the holes has a second projection on the first substrate, the first projection is larger than the second projection, and the second projection is located in the first projection .一種用於處理微型發光二極體的系統，包含： 如請求項1-12任一項所述之選擇性切換式光罩；以及 一黏著層，設置於該選擇性切換式光罩下且與該選擇性切換式光罩的該第一基板直接接觸。A system for processing miniature light emitting diodes comprising: The selectively switchable photomask as described in any one of Claims 1-12; and An adhesive layer is disposed under the selectively switchable photomask and is in direct contact with the first substrate of the selectively switchable photomask.

Images