TW202209403A - Gas flow regulation device and regulation method and plasma processing device wherein the gas flow regulation device comprises a gas baffle and multiple liftable isolation assemblies arranged on the gas baffle - Google Patents

Abstract

A gas flow regulation device and a regulation method and a plasma processing device are disclosed. The gas flow regulation device comprises a gas baffle and multiple liftable isolation assemblies arranged on the gas baffle. The isolation assemblies conduct dynamic regulation of areas of a circular gas distribution region and an annular gas distribution region formed between a bottom board and a mounting substrate, so that the plasma processing rate corresponding to the circular gas distribution region and/or the annular gas distribution region is consistent with other regions. The present invention is applicable to different chemical gas environments and different gas ratios to allow the areas of different gas distribution regions to correspond to different chemical gas environments and different gas ratios, thereby greatly enhancing flexibility, sensitivity, and accuracy of adjusting the plasma processing rate, increasing consistency of plasma processing rate, and easily operable to enhance the applicability of equipment and shorten the process adjustment test cycle.

Description

Translated fromChinese

一種氣體流量調節裝置和調節方法及等離子體處理裝置A gas flow regulating device and regulating method and plasma processing device

本發明涉及半導體製造領域，尤其涉及一種氣體流量調節裝置，氣體流量調節方法，及應用該氣體流量調節裝置的等離子體處理裝置。The invention relates to the field of semiconductor manufacturing, in particular to a gas flow regulating device, a gas flow regulating method, and a plasma processing device using the gas flow regulating device.

隨著晶片行業的日益更新，技術節點的日趨提升，對製程和技術的精雕細琢也有著越來越高的要求，尤其是到了3nm以下，精細化製程就日趨突出，例如製程的均一性，即任何薄膜的沉積，蝕刻，拋光等製程隨著奈米節點的提升都需要很高的均一性。With the increasing update of the chip industry and the improvement of technology nodes, there are also higher and higher requirements for the meticulous crafting of processes and technologies, especially below 3nm, the refined process becomes more and more prominent, such as the uniformity of the process, That is to say, any thin film deposition, etching, polishing and other processes require high uniformity with the improvement of nano-nodes.

現階段的製程研發過程中，在一些新的化學環境抑或是對現有的化學環境進行進一步優化時，常常面臨許多困難，其一便是均一性的調節。目前有較多的方法來進行均一性的調節，其中一個方法就是通過氣體擋板（gas buffer）來調節進入氣體噴淋頭的氣體流量，氣體擋板通過安裝基座（mounting base）安裝至氣體噴淋頭（showerhead）上方，氣體擋板連接外部反應氣體，氣體擋板一般可分為多個區域，每個區域都是相互隔離的，通過調節進入每個區域的氣體比例來獲得不同區域的氣體含量，進而改變安裝基座至氣體噴淋頭不同區域最後至製程腔體（chamber）的氣體含量，從而來提高均一蝕刻或者沉積的效果。由於現有的氣體擋板中的各個區域的位置和面積大小都是固定不變的，某一種氣體擋板中的氣體分區可能僅僅適用於某一種反應的化學氣體，而不同的製程需要使用不同的化學反應氣體，不同的化學氣體具有不同的密度，同一個氣體擋板無法同時滿足在不同的化學氣體環境下的均一性調節要求，降低了氣體擋板在不同的氣體，不同的氣體比例，不同的化學環境中的靈敏度，不利於工藝製程的進行，降低了産品的良率。In the process of process research and development at the current stage, many difficulties are often faced in some new chemical environments or when further optimizing the existing chemical environments. One of them is the adjustment of uniformity. At present, there are many methods to adjust the uniformity. One of the methods is to adjust the gas flow rate entering the gas shower head through a gas buffer. The gas baffle is installed to the gas through a mounting base. Above the showerhead, the gas baffle is connected to the external reaction gas. The gas baffle can generally be divided into multiple areas, and each area is isolated from each other. Gas content, and then change the gas content from the mounting base to different areas of the gas shower head and finally to the process chamber, so as to improve the effect of uniform etching or deposition. Since the position and size of each area in the existing gas baffle are fixed, the gas partition in a certain gas baffle may only be suitable for a certain chemical gas, and different processes need to use different Chemical reaction gas, different chemical gases have different densities, the same gas baffle cannot meet the uniformity adjustment requirements in different chemical gas environments at the same time, reducing the gas baffle in different gases, different gas ratios, different The sensitivity in the chemical environment is not conducive to the progress of the process and reduces the yield of the product.

這裡的陳述僅提供與本發明有關的背景技術，而並不必然地構成現有技術。The statements herein merely provide background related to the present invention and do not necessarily constitute prior art.

本發明提供一種氣體流量調節裝置和調節方法及等離子體處理裝置，根據等離子體處理速率的變化，實現對氣體擋板與安裝基板之間的圓形氣體分配區域和環形氣體分配區域的面積進行動態調節，從而動態地調節等離子體處理裝置內氣體擋板中的氣體腔分布，獲得均勻的等離子體處理速率。The present invention provides a gas flow regulating device, regulating method and plasma processing device, which can dynamically adjust the area of the circular gas distribution area and the annular gas distribution area between the gas baffle and the mounting substrate according to the change of the plasma processing rate. adjustment, thereby dynamically adjusting the distribution of the gas cavity in the gas baffle in the plasma processing device to obtain a uniform plasma processing rate.

為了達到上述目的，本發明提供一種氣體流量調節裝置，其設置在等離子體處理裝置的一真空反應腔內，所述氣體流量調節裝置與一外部供氣裝置連接，所述氣體流量調節裝置通過安裝基板實現對氣體噴淋頭的不同區域的面積進行調節，所述氣體流量調節裝置包含：In order to achieve the above object, the present invention provides a gas flow regulating device, which is arranged in a vacuum reaction chamber of a plasma processing device, the gas flow regulating device is connected with an external gas supply device, and the gas flow regulating device is installed by The substrate realizes the adjustment of the areas of different regions of the gas shower head, and the gas flow adjustment device includes:

氣體擋板，包含相對設置的頂板和底板，所述底板與安裝基板配合形成同心設置的圓形氣體分配區域和至少一環形氣體分配區域；a gas baffle, comprising a top plate and a bottom plate arranged oppositely, and the bottom plate cooperates with the mounting substrate to form a concentrically arranged circular gas distribution area and at least one annular gas distribution area;

隔離組件，可升降地設置於所述氣體擋板與安裝基板之間，用於對所述圓形氣體分配區域和/或所述環形氣體分配區域的面積進行調節。The isolation component is movably arranged between the gas baffle and the mounting substrate, and is used for adjusting the area of the circular gas distribution area and/or the annular gas distribution area.

所述隔離組件包含至少兩層同心設置的環狀隔離層，升降不同的環狀隔離層可以改變所述圓形氣體分配區域和/或所述環形氣體分配區域的面積。The isolation assembly includes at least two concentrically arranged annular isolation layers, and lifting and lowering different annular isolation layers can change the area of the circular gas distribution area and/or the annular gas distribution area.

一方面，所述環狀隔離層包含一環狀隔板，所述環狀隔板為可升降活動連接。In one aspect, the annular isolation layer includes an annular baffle, and the annular baffle is a movable connection that can be raised and lowered.

所述環狀隔離層還包含設置在所述氣體擋板的頂板上的升降固定組件，所述升降固定組件連接所述環狀隔板，實現所述環狀隔板的升降。The annular isolation layer further includes a lifting and fixing assembly arranged on the top plate of the gas baffle, and the lifting and fixing assembly is connected with the annular baffle to realize the lifting and lowering of the annular baffle.

所述環狀隔板與所述安裝基板接觸的一端設置有第一密封圈，用於實現所述環狀隔板與所述安裝基板之間的密封。One end of the annular spacer in contact with the mounting substrate is provided with a first sealing ring, which is used to achieve sealing between the annular spacer and the mounting substrate.

所述環狀隔板上設置有第二密封圈，所述第二密封圈位於所述氣體擋板的底板上方，所述第二密封圈用於實現所述環狀隔板與所述氣體擋板的底板之間的密封。A second sealing ring is arranged on the annular baffle, the second sealing ring is located above the bottom plate of the gas baffle, and the second sealing ring is used to realize the annular baffle and the gas baffle Seal between the bottom plates of the plates.

所述氣體擋板的底板上具有通孔，所述環狀隔板降下時穿過所述通孔與所述安裝基板接觸。The bottom plate of the gas baffle is provided with a through hole, and the annular partition plate passes through the through hole and contacts the mounting substrate when it is lowered.

所述通孔的形狀與所述第二密封圈的形狀相互契合，隨著所述環狀隔板下降，所述第二密封圈可以與所述通孔完全匹配貼合密封在一起，避免所述氣體擋板內的氣體經過所述通孔進入相鄰區域。The shape of the through hole and the shape of the second sealing ring match each other, and as the annular baffle descends, the second sealing ring can be completely matched and sealed with the through hole, avoiding any problems. The gas in the gas baffle enters the adjacent area through the through hole.

所述氣體擋板還包含連接組件，所述連接組件的一端連接所述氣體擋板的頂板，所述連接組件的另一端連接所述氣體擋板的底板，用以支撑所述氣體擋板的底板並維持所述通孔的形狀。The gas baffle further includes a connecting assembly, one end of the connecting assembly is connected to the top plate of the gas baffle, and the other end of the connecting assembly is connected to the bottom plate of the gas baffle to support the gas baffle. bottom plate and maintain the shape of the through hole.

另一方面，所述環狀隔離層包含沿圓周線間隔設置的至少兩個柱狀隔板，以及設置在相鄰的柱狀隔板之間的扇環狀隔板，所述柱狀隔板可升降活動連接，所述扇環狀隔板固定設置。On the other hand, the annular isolation layer includes at least two columnar partitions arranged at intervals along the circumference, and a fan-shaped partition arranged between adjacent columnar partitions, the columnar partitions It can be moved up and down, and the fan annular partition is fixedly arranged.

所述環狀隔離層還包含設置在所述氣體擋板的頂板上的升降固定組件，所述升降固定組件連接所述柱狀隔板，實現所述柱狀隔板的升降。The annular isolation layer further includes a lifting and fixing assembly arranged on the top plate of the gas baffle, and the lifting and fixing assembly is connected to the columnar separator to realize the lifting and lowering of the columnar separator.

所述柱狀隔板與所述安裝基板接觸的一端設置有第一密封圈，用於實現所述柱狀隔板與所述安裝基板之間的密封。A first sealing ring is provided at one end of the columnar spacer in contact with the mounting substrate, which is used to achieve sealing between the columnar spacer and the mounting substrate.

所述柱狀隔板上設置有第二密封圈，所述第二密封圈位於所述氣體擋板的底板上方，所述第二密封圈用於實現所述柱狀隔板與所述氣體擋板的底板之間的密封。A second sealing ring is provided on the cylindrical separator, the second sealing ring is located above the bottom plate of the gas baffle, and the second sealing ring is used to realize the cylindrical separator and the gas barrier Seal between the bottom plates of the plates.

所述柱狀隔板上設置有第三密封圈，用於實現所述柱狀隔板與所述扇環狀隔板之間的密封。A third sealing ring is arranged on the columnar partition, which is used to realize the sealing between the columnar partition and the fan-shaped partition.

所述氣體擋板的底板上具有通孔，所述柱狀隔板穿過所述通孔與所述安裝基板接觸。The bottom plate of the gas baffle is provided with a through hole, and the column spacer passes through the through hole and is in contact with the mounting substrate.

所述通孔的形狀與所述第二密封圈的形狀相互契合，隨著所述柱狀隔板下降，所述第二密封圈可以與所述通孔完全匹配貼合密封在一起，避免所述氣體擋板內的氣體經過所述通孔進入相鄰區域。The shape of the through hole and the shape of the second sealing ring fit each other, and as the columnar partition descends, the second sealing ring can be completely matched and sealed with the through hole, so as to avoid any problems. The gas in the gas baffle enters the adjacent area through the through hole.

所述升降固定組件包含螺紋連接的螺桿和螺母，所述螺桿固定連接所述環狀隔板或柱狀隔板，通過螺母的旋轉實現螺桿的升降，從而實現環狀隔板或柱狀隔板的升降。The lifting and fixing assembly includes a screw and a nut that are threadedly connected, the screw is fixedly connected to the annular partition or the columnar partition, and the rotation of the nut realizes the lifting of the screw, thereby realizing the annular partition or the columnar partition. the lift.

所述螺桿上設置有波紋管，用於實現所述升降固定組件與所述氣體擋板的頂板之間的密封。The screw is provided with a bellows for realizing the sealing between the lifting and fixing assembly and the top plate of the gas baffle.

所述氣體擋板的底板上設置多個氣體通孔，用於實現對所述圓形氣體分配區域和環形氣體分配區域的氣體輸送。A plurality of gas through holes are arranged on the bottom plate of the gas baffle, so as to realize the gas delivery to the circular gas distribution area and the annular gas distribution area.

所述安裝基板上設置多個氣體通孔，所述氣體通孔與所述氣體噴淋頭上的氣體通孔相對應。A plurality of gas through holes are provided on the mounting substrate, and the gas through holes correspond to the gas through holes on the gas shower head.

本發明還提供一種等離子體處理裝置，包含一真空反應腔，所述真空反應腔內設置一用於支撑基片的基座，所述真空反應腔內還設置一氣體噴淋頭，所述氣體噴淋頭設置在安裝基板上，所述安裝基板與所述一氣體流量調節裝置配合，實現對所述氣體噴淋頭不同區域的面積進行調節。The present invention also provides a plasma processing device, comprising a vacuum reaction chamber, a base for supporting a substrate is arranged in the vacuum reaction chamber, and a gas shower head is also arranged in the vacuum reaction chamber, and the gas The shower head is arranged on an installation substrate, and the installation substrate cooperates with the gas flow adjustment device to realize the adjustment of the areas of different regions of the gas shower head.

本發明還提供一種採用所述氣體流量調節裝置實現的等離子體處理裝置內的氣體流量調節方法，選定與等離子體處理速率不均勻區域對應的圓形氣體分配區域和/或環形氣體分配區域的範圍，通過調節所述環狀隔板的升降，或通過調節所述柱狀隔板的升降，實現對所述圓形氣體分配區域和/或所述環形氣體分配區域的面積進行動態調節，從而使該選定的圓形氣體分配區域和/或環形氣體分配區域對應的區域的等離子體處理速率與其他區域達到一致。The present invention also provides a gas flow adjustment method in a plasma processing device realized by using the gas flow adjustment device, and the range of the circular gas distribution area and/or the annular gas distribution area corresponding to the uneven plasma processing rate area is selected , by adjusting the lifting of the annular baffle, or by adjusting the lifting of the columnar baffle, the area of the circular gas distribution area and/or the annular gas distribution area can be dynamically adjusted, so that the The plasma processing rate of the region corresponding to the selected circular gas distribution region and/or annular gas distribution region is consistent with other regions.

所述選定的圓形氣體分配區域和/或環形氣體分配區域對應的區域的等離子體處理速率高於其他區域，則通過調節所述環狀隔板或柱狀隔板上升，以增加所述圓形氣體分配區域和/或所述環形氣體分配區域的面積。If the plasma processing rate of the selected circular gas distribution area and/or the area corresponding to the annular gas distribution area is higher than that of other areas, the annular spacer or columnar spacer can be adjusted to rise to increase the circular gas distribution. shape gas distribution area and/or the area of said annular gas distribution area.

所述選定的圓形氣體分配區域和/或環形氣體分配區域對應的區域的等離子體處理速率低於其他區域，則通過調節所述環狀隔板或柱狀隔板下降，以减少所述圓形氣體分配區域和/或所述環形氣體分配區域的面積。If the plasma processing rate of the selected circular gas distribution area and/or the area corresponding to the annular gas distribution area is lower than that of other areas, the annular spacer or columnar spacer is adjusted to descend to reduce the circular gas distribution. shape gas distribution area and/or the area of said annular gas distribution area.

本發明通過設置可升降的隔離組件，根據等離子體處理速率的變化，實現對氣體擋板與安裝基板之間的圓形氣體分配區域和環形氣體分配區域的面積進行動態調節，從而動態地調節等離子體處理裝置內氣體擋板中的氣體腔分布，可以適用於不同的化學氣體環境和不同的氣體比例，令不同的氣體分配區域面積對應不同的化學氣體環境和不同的氣體比例，大大提高了對等離子體處理速率進行調節的靈活性、靈敏度和準確性，提高了等離子體處理速率的均勻性，且操作簡單，提高了設備的適用度，縮短了製程調整試驗周期。The present invention dynamically adjusts the area of the circular gas distribution area and the annular gas distribution area between the gas baffle and the mounting substrate by setting the liftable isolation component according to the change of the plasma processing rate, so as to dynamically adjust the plasma The gas cavity distribution in the gas baffle in the body treatment device can be applied to different chemical gas environments and different gas ratios, so that different gas distribution areas correspond to different chemical gas environments and different gas ratios, which greatly improves the The flexibility, sensitivity and accuracy of the plasma treatment rate adjustment improve the uniformity of the plasma treatment rate, and the operation is simple, the applicability of the equipment is improved, and the process adjustment test period is shortened.

以下根據圖1～圖13，具體說明本發明的較佳實施例。Hereinafter, the preferred embodiments of the present invention will be described in detail with reference to FIGS. 1 to 13 .

如圖1所示，本發明提供一種等離子體處理裝置，包含一真空反應腔1，所述真空反應腔1內設置一作為下電極的基座7，基座7上設置靜電夾盤8，基片9設置在靜電夾盤8上。所述真空反應腔1內還設置一作為上電極的氣體噴淋頭5，所述氣體噴淋頭5設置在安裝基板4上，所述安裝基板4上設置多個氣體通孔41，所述安裝基板4上的氣體通孔41與所述氣體噴淋頭5上的氣體通孔51相對應。所述真空反應腔1內還設置一氣體流量調節裝置3，所述氣體流量調節裝置3通過所述安裝基板4連接所述氣體噴淋頭5，且所述氣體流量調節裝置3與一外部供氣裝置2連接。反應氣體從所述外部供氣裝置2進入所述氣體流量調節裝置3，所述安裝基板4與所述氣體流量調節裝置3配合，實現對所述氣體噴淋頭5的不同區域的面積進行調節，從而對所述氣體噴淋頭5的不同區域的氣體流量進行調節，進入真空反應腔1的反應氣體電離生成等離子體6，對基片9進行處理。As shown in FIG. 1 , the present invention provides a plasma processing device, which includes avacuum reaction chamber 1 , abase 7 serving as a lower electrode is arranged in thevacuum reaction chamber 1 , and anelectrostatic chuck 8 is arranged on thebase 7 . Thesheet 9 is placed on theelectrostatic chuck 8 . Thevacuum reaction chamber 1 is also provided with agas shower head 5 serving as an upper electrode. Thegas shower head 5 is arranged on themounting substrate 4 , and a plurality of gas throughholes 41 are arranged on themounting substrate 4 . The gas throughholes 41 on themounting substrate 4 correspond to the gas throughholes 51 on thegas shower head 5 . Thevacuum reaction chamber 1 is also provided with a gasflow regulating device 3, the gasflow regulating device 3 is connected to thegas shower head 5 through themounting substrate 4, and the gasflow regulating device 3 is connected to an external supply.Air device 2 is connected. The reaction gas enters the gasflow regulating device 3 from the externalgas supply device 2 , and themounting substrate 4 cooperates with the gasflow regulating device 3 to adjust the areas of different areas of thegas shower head 5 , so as to adjust the gas flow in different regions of thegas shower head 5 , the reaction gas entering thevacuum reaction chamber 1 is ionized to generateplasma 6 , and thesubstrate 9 is processed.

在本發明的一個實施例中，如圖2和圖3所示，所述氣體擋板31包含相對設置的頂板32和底板33，所述底板33與所述安裝基板4之間設置固定的環狀結構3303，用於將安裝基板4的進氣面分隔形成同心設置的圓形氣體分配區域301和至少一環形氣體分配區域302。由於所述環狀結構3303為固定結構，圓形氣體分配區域301和環形氣體分配區域302的面積相對固定，為了對氣體噴淋頭的不同氣體分配區域進行更為靈活的氣體流量調節，本發明提供的氣體流量調節裝置3包含氣體擋板31和設置在所述氣體擋板31上的多個隔離組件34，所述隔離組件34可升降地設置於所述氣體擋板31與安裝基板4之間，且所述隔離組件34可以對所述圓形氣體分配區域301和/或所述環形氣體分配區域302的面積進行動態調節，所述底板33上設置多個氣體通孔3302，用於實現對所述圓形氣體分配區域301和環形氣體分配區域302的氣體輸送。In an embodiment of the present invention, as shown in FIG. 2 and FIG. 3 , thegas baffle 31 includes atop plate 32 and abottom plate 33 arranged opposite to each other, and a fixed ring is arranged between thebottom plate 33 and themounting substrate 4 Theshape structure 3303 is used to separate the inlet surface of themounting substrate 4 to form a concentric circulargas distribution area 301 and at least one annulargas distribution area 302 . Since theannular structure 3303 is a fixed structure, the areas of the circulargas distribution area 301 and the annulargas distribution area 302 are relatively fixed. The provided gasflow regulating device 3 includes agas baffle 31 and a plurality ofisolation components 34 arranged on thegas baffle 31 , and theisolation components 34 are movably arranged between thegas baffle 31 and themounting substrate 4 . and theisolation component 34 can dynamically adjust the area of the circulargas distribution area 301 and/or the annulargas distribution area 302, and thebottom plate 33 is provided with a plurality of gas throughholes 3302 for realizing Gas delivery to the circulargas distribution area 301 and the annulargas distribution area 302 .

如圖4～圖6所示，所述隔離組件34包含至少兩層同心設置的環狀隔離層35，所述環狀隔離層35包含一環狀隔板3501和至少兩個升降固定組件3502，所述環狀隔板3501與所述頂板32和底板33為可升降活動連接，在本實施例中，設置了三層環狀隔離層35，每層所述環狀隔離層35上設置了六個升降固定組件3502（如圖5所示），所述升降固定組件3502包含螺紋連接的螺桿3506和螺母3507，所述螺桿3506固定連接所述環狀隔板3501，通過所述螺母3507的旋轉實現所述螺桿3506的升降，從而實現所述環狀隔板3501的升降，所述螺桿3506上設置有波紋管3505，用於實現所述升降固定組件3502與所述氣體擋板31的頂板32之間的密封。所述環狀隔板3501與所述安裝基板4接觸的一端設置有第一密封圈3503，用於實現所述環狀隔板3501與所述安裝基板4之間的密封。所述環狀隔板3501上設置有第二密封圈3504，所述第二密封圈3504位於所述氣體擋板31的底板33上方，所述第二密封圈3504用於實現所述環狀隔板3501與所述氣體擋板31的底板33之間的密封。所述第一密封圈3503和所述第二密封圈3504都具有耐高溫，耐腐蝕等特性。As shown in FIGS. 4 to 6 , theisolation assembly 34 includes at least two concentricannular isolation layers 35 , and theannular isolation layer 35 includes anannular baffle 3501 and at least two lifting andfixing assemblies 3502 . Theannular partition 3501 is connected to thetop plate 32 and thebottom plate 33 in a liftable and movable manner. In this embodiment, threeannular isolation layers 35 are provided, and sixannular isolation layers 35 are arranged on each layer. A lifting and fixing assembly 3502 (as shown in FIG. 5 ), the lifting andfixing assembly 3502 includes a threadedrod 3506 and anut 3507 . Realize the lifting and lowering of thescrew 3506, so as to realize the lifting of theannular baffle 3501. Thescrew 3506 is provided with abellows 3505, which is used to realize the lifting and fixingassembly 3502 and thetop plate 32 of thegas baffle 31. seal between. Afirst sealing ring 3503 is provided at one end of theannular spacer 3501 in contact with the mountingsubstrate 4 to achieve sealing between theannular spacer 3501 and the mountingsubstrate 4 . Theannular partition 3501 is provided with asecond sealing ring 3504, thesecond sealing ring 3504 is located above thebottom plate 33 of thegas baffle 31, and thesecond sealing ring 3504 is used to realize the annular partition The seal between theplate 3501 and thebottom plate 33 of thegas baffle 31 . Both thefirst sealing ring 3503 and thesecond sealing ring 3504 have properties such as high temperature resistance and corrosion resistance.

如圖4所示，為了與所述的隔離組件34相匹配，所述氣體擋板31的底板33上設置有通孔3301，所述環狀隔板3501降下時穿過所述通孔3301與所述安裝基板4接觸，所述通孔3301的形狀與所述第二密封圈3504的形狀相互契合，隨著所述環狀隔板3501下降，所述第二密封圈3504可以與所述通孔3301完全匹配貼合密封在一起，避免所述氣體擋板31內的氣體經過所述通孔3301進入相鄰區域。由於本實施例中採用的是環狀隔板3501，因此從俯視圖中看，與其匹配的通孔3301也呈環狀，所述底板33上存在多個環狀的通孔3301會導致所述底板33被割裂為多個部分，為了防止相鄰的通孔3301之間的底板33脫落，則設置連接組件36，所述連接組件36的一端連接所述氣體擋板31的頂板32，所述連接組件36的另一端連接所述氣體擋板31的底板33，用以支撑所述氣體擋板31的底板33並維持所述通孔3301的形狀。As shown in FIG. 4 , in order to match with theisolation assembly 34 , thebottom plate 33 of thegas baffle 31 is provided with a throughhole 3301 , and theannular baffle 3501 passes through the throughhole 3301 and the throughhole 3301 when lowered. The mountingsubstrate 4 is in contact with each other, and the shape of the throughhole 3301 and the shape of thesecond sealing ring 3504 match each other. As theannular spacer 3501 descends, thesecond sealing ring 3504 may Theholes 3301 are completely matched and sealed together to prevent the gas in thegas baffle 31 from entering the adjacent area through the through holes 3301 . Since theannular spacer 3501 is used in this embodiment, the matching throughholes 3301 are also annular in plan view. The existence of multiple annular throughholes 3301 on thebottom plate 33 will cause the 33 is split into a plurality of parts, in order to prevent thebottom plate 33 between the adjacent throughholes 3301 from falling off, a connectingcomponent 36 is provided, one end of the connectingcomponent 36 is connected to thetop plate 32 of thegas baffle 31, and the The other end of theassembly 36 is connected to thebottom plate 33 of thegas baffle 31 for supporting thebottom plate 33 of thegas baffle 31 and maintaining the shape of the throughhole 3301 .

在等離子體處理過程中，由於不同製程中，參與反應的化學氣體的種類和比例不同，氣體噴淋頭上不同的氣體分配區域需要輸送的氣體流量等參數存在變化，因此需要通過升降所述隔離組件34中的所述環狀隔板3501來動態調節所述氣體擋板31與安裝基板4之間的所述圓形氣體分配區域和/或所述環形氣體分配區域的面積，從而動態調節所述氣體噴淋頭5的不同區域的氣體流量，獲得均勻的等離子體處理速率。In the process of plasma treatment, due to the different types and proportions of chemical gases involved in the reaction in different processes, the parameters such as the gas flow rate that need to be delivered in different gas distribution areas on the gas shower head vary, so it is necessary to lift and lower the isolation components. Theannular spacer 3501 in 34 is used to dynamically adjust the area of the circular gas distribution area and/or the annular gas distribution area between thegas baffle 31 and the mountingsubstrate 4, so as to dynamically adjust the The gas flow in different regions of thegas shower head 5 achieves a uniform plasma processing rate.

在本實施例中，所述底板33與安裝基板4之間分隔形成同心設置的一個圓形氣體分配區域301和三個環形氣體分配區域302，所述隔離組件34包含三層同心設置的環狀隔離層35。在等離子體處理過程中，如果緊鄰所述圓形氣體分配區域301的環形氣體分配區域302對應的區域的等離子體處理速率高於其他區域，則說明該區域內的反應氣體密度較大，可以通過擴大該區域對應的環形氣體分配區域302的面積（在高度不變的情况下，面積擴大則空間體積也隨之擴大）來降低氣體密度。如圖7所示，可將選定的環形氣體分配區域302與相鄰的環形氣體分配區域302之間的所有環狀隔離層35中的所述環狀隔板3501都升起，具體來說，通過旋轉所述螺桿3506帶動所述環狀隔板3501上升至所述環狀隔板3501與所述安裝基板4之間存在間隙，利用所述螺母3507固定所述螺桿3506的當前位置。所述環狀隔板3501上升的位置極限是要保證所述第一密封圈3503仍然位於所述底板33上的所述通孔3301內，此時所述第一密封圈3503與所述通孔3301密封在一起，避免所述氣體擋板31內的氣體經過所述通孔3301進入相鄰區域。當所述環狀隔離層35全部升起後，此時所述選定的環形氣體分配區域302與相鄰的環形氣體分配區域302之間完全連通，兩個相鄰的環形氣體分配區域302已經合併成為一個環形氣體分配區域302，也即是將所述選定的環形氣體分配區域302的面積擴大了，從而降低了該環形氣體分配區域302內的反應氣體密度，隨之降低了與所述環形氣體分配區域302對應的區域的等離子體處理速率，使該選定的環形氣體分配區域302對應的區域的等離子體處理速率與其他區域達到一致，獲得均勻的等離子體處理速率。In this embodiment, one circulargas distribution area 301 and three annulargas distribution areas 302 are formed concentrically between thebottom plate 33 and the mountingsubstrate 4 , and theisolation component 34 includes three layers of concentric annulargas distribution areas 302 .isolation layer 35 . During the plasma treatment process, if the plasma treatment rate of the region corresponding to the annulargas distribution region 302 adjacent to the circulargas distribution region 301 is higher than that of other regions, it means that the density of the reactive gas in this region is relatively high, which can be obtained by The area of the annulargas distribution area 302 corresponding to this area is enlarged (in the case of a constant height, the space volume is also enlarged when the area is enlarged) to reduce the gas density. As shown in FIG. 7 , theannular partitions 3501 in all annular isolation layers 35 between the selected annulargas distribution area 302 and the adjacent annulargas distribution area 302 may be raised, specifically, Rotating thescrew 3506 drives theannular spacer 3501 to rise until there is a gap between theannular spacer 3501 and the mountingsubstrate 4 , and thenut 3507 is used to fix the current position of thescrew 3506 . The limit of the rising position of theannular partition plate 3501 is to ensure that thefirst sealing ring 3503 is still located in the throughhole 3301 on thebottom plate 33. At this time, thefirst sealing ring 3503 is connected to the through hole. 3301 are sealed together to prevent the gas in thegas baffle 31 from entering the adjacent area through the throughhole 3301 . When theannular isolation layer 35 is fully lifted, the selected annulargas distribution area 302 is completely communicated with the adjacent annulargas distribution area 302, and the two adjacent annulargas distribution areas 302 have been merged It becomes an annulargas distribution area 302, that is, the area of the selected annulargas distribution area 302 is enlarged, thereby reducing the density of the reactant gas in the annulargas distribution area 302, thereby reducing the density of the reaction gas in the annulargas distribution area 302. The plasma treatment rate of the region corresponding to thedistribution region 302 is made so that the plasma treatment rate of the region corresponding to the selected annulargas distribution region 302 is consistent with other regions, so as to obtain a uniform plasma treatment rate.

隨著反應的化學氣體的種類和比例發生了變化，圖7中緊鄰所述圓形氣體分配區域301的環形氣體分配區域302對應的區域的等離子體處理速率變為低於其他區域，則說明該區域內的反應氣體密度較小，可以通過縮小該區域對應的環形氣體分配區域302的面積來提高氣體密度。如圖8所示，如果選定的環形氣體分配區域302對應的區域的等離子體處理速率與其他區域相差的較大，則需要將所述選定的環形氣體分配區域302的面積縮小的多一些，所以選擇將最靠近圓心一側的環狀隔離層35中的所述環狀隔板3501降下，通過旋轉所述螺桿3506帶動所述環狀隔板3501下降，直至所述第一密封圈3503與所述安裝基板4壓緊貼合密封，利用所述螺母3507固定所述螺桿3506的當前位置，此時所述第二密封圈3504完全嵌入所述通孔3301內，實現所述環狀隔板3501與所述氣體擋板31的底板33之間的密封，所述選定的環形氣體分配區域302的面積縮小了，從而提高了該環形氣體分配區域302內的反應氣體密度，隨之提高了與所述環形氣體分配區域302對應的區域的等離子體處理速率，使該選定的環形氣體分配區域302對應的區域的等離子體處理速率與其他區域達到一致，獲得均勻的等離子體處理速率。As the types and proportions of the reacted chemical gases change, the plasma processing rate of the region corresponding to the annulargas distribution region 302 adjacent to the circulargas distribution region 301 in FIG. 7 becomes lower than that of other regions, indicating that the The density of the reactive gas in the region is relatively small, and the gas density can be increased by reducing the area of the annulargas distribution region 302 corresponding to the region. As shown in FIG. 8 , if the plasma processing rate of the region corresponding to the selected annulargas distribution region 302 is significantly different from that of other regions, the area of the selected annulargas distribution region 302 needs to be reduced more, so Select to lower theannular partition 3501 in theannular isolation layer 35 on the side closest to the center of the circle, and rotate thescrew 3506 to drive theannular partition 3501 to lower until thefirst sealing ring 3503 is in contact with all the rings. The mountingsubstrate 4 is pressed against the seal, and thenut 3507 is used to fix the current position of thescrew 3506. At this time, thesecond sealing ring 3504 is completely embedded in the throughhole 3301 to realize theannular partition 3501 With the sealing between thebottom plate 33 of thegas baffle 31, the area of the selected annulargas distribution area 302 is reduced, thereby increasing the density of the reaction gas in the annulargas distribution area 302, thereby increasing the density of the gas in the annulargas distribution area 302. The plasma processing rate of the region corresponding to the annulargas distribution region 302 is determined so that the plasma processing rate of the region corresponding to the selected annulargas distribution region 302 is consistent with other regions, and a uniform plasma processing rate is obtained.

通過設置可升降的環狀隔板，實現對氣體擋板與安裝基板之間的圓形氣體分配區域和環形氣體分配區域的面積進行動態調節，可以適用於不同的化學氣體環境和不同的氣體比例，令不同的氣體分配區域面積對應不同的化學氣體環境和不同的氣體比例，大大提高了對等離子體處理速率進行調節的靈活性、靈敏度和準確性，提高了等離子體處理速率的均勻性，且操作簡單，提高了設備的適用度，縮短了製程調整試驗周期。The circular gas distribution area and the area of the annular gas distribution area between the gas baffle and the mounting substrate can be dynamically adjusted by setting up a liftable annular partition, which can be applied to different chemical gas environments and different gas ratios , so that different gas distribution area areas correspond to different chemical gas environments and different gas ratios, which greatly improves the flexibility, sensitivity and accuracy of adjusting the plasma processing rate, and improves the uniformity of the plasma processing rate. The operation is simple, the applicability of the equipment is improved, and the process adjustment test period is shortened.

在本發明的另一個實施例中，如圖2和圖3所示，所述氣體流量調節裝置3包含氣體擋板31和設置在所述氣體擋板31上的多個隔離組件34，所述氣體擋板31包含相對設置的頂板32和底板33，所述隔離組件34可升降地設置於所述氣體擋板31與安裝基板4之間，所述底板33與安裝基板4被所述隔離組件34分隔形成同心設置的圓形氣體分配區域301和至少一環形氣體分配區域302，且所述隔離組件34可以對所述圓形氣體分配區域301和/或所述環形氣體分配區域302的面積進行動態調節，所述底板33上設置多個氣體通孔3302，用於實現對所述圓形氣體分配區域301和環形氣體分配區域302的氣體輸送。In another embodiment of the present invention, as shown in FIG. 2 and FIG. 3 , the gasflow regulating device 3 includes agas baffle 31 and a plurality ofisolation components 34 arranged on thegas baffle 31 . Thegas baffle 31 includes atop plate 32 and abottom plate 33 which are arranged opposite to each other. Theisolation assembly 34 is movably arranged between thegas baffle 31 and the mountingsubstrate 4 , and thebottom plate 33 and the mountingsubstrate 4 are separated by the isolation assembly. 34 is separated to form a concentrically arranged circulargas distribution area 301 and at least one annulargas distribution area 302, and theisolation component 34 can perform a For dynamic adjustment, a plurality of gas throughholes 3302 are provided on thebottom plate 33 for realizing gas delivery to the circulargas distribution area 301 and the annulargas distribution area 302 .

如圖9～圖11所示，所述隔離組件34包含至少兩層同心設置的環狀隔離層35，所述環狀隔離層35包含沿圓周線間隔設置的至少兩個可升降的柱狀隔板3508，以及固定設置在相鄰的所述柱狀隔板3508之間的扇環狀隔板3509，所述扇環狀隔板3509為固定結構，不可移動，其一直保持與所述氣體擋板31和安裝基板4貼合的狀態，以實現不同的氣體分配區域之間的隔離。所述柱狀隔板3508與所述頂板32和底板33為可升降活動連接，以實現相鄰氣體分配區域之間的氣體連通。所述環狀隔離層35還包含設置在所述氣體擋板31的頂板32上的至少兩個升降固定組件3502，所述升降固定組件3502連接所述柱狀隔板3508，實現所述柱狀隔板3508的升降。在本實施例中，設置了三層環狀隔離層35，每層所述環狀隔離層35上設置了六個可升降的柱狀隔板3508，每個所述柱狀隔板3508對應連接一個所述升降固定組件3502（如圖10和圖11所示），所述升降固定組件3502包含螺紋連接的螺桿3506和螺母3507，所述螺桿3506固定連接所述柱狀隔板3508，通過所述螺母3507的旋轉實現所述螺桿3506的升降，從而實現所述柱狀隔板3508的升降，所述螺桿3506上設置有波紋管3505，用於實現所述升降固定組件3502與所述氣體擋板31的頂板32之間的密封。所述柱狀隔板3508與所述安裝基板4接觸的一端設置有第一密封圈3503，用於實現所述柱狀隔板3508與所述安裝基板4之間的密封。所述柱狀隔板3508上設置有第二密封圈3504，所述第二密封圈3504位於所述氣體擋板31的底板33上方，所述第二密封圈3504用於實現所述柱狀隔板3508與所述氣體擋板31的底板33之間的密封。所述第一密封圈3503和所述第二密封圈3504都具有耐高溫，耐腐蝕等特性。As shown in FIG. 9 to FIG. 11 , theisolation assembly 34 includes at least two layers of annular isolation layers 35 arranged concentrically, and theannular isolation layer 35 includes at least two liftable columnar partitions arranged at intervals along the circumference. Theplate 3508, and the fan-ring partitions 3509 fixedly arranged between the adjacent column-shapedpartitions 3508, the fan-ring partitions 3509 are fixed structures, cannot move, and are always kept in contact with the gas barrier The state in which theboard 31 and the mountingsubstrate 4 are attached to achieve isolation between different gas distribution areas. The column-shapedpartition plate 3508 is movably connected to thetop plate 32 and thebottom plate 33 so as to be able to move up and down, so as to realize gas communication between adjacent gas distribution areas. Theannular isolation layer 35 also includes at least two lifting and fixingcomponents 3502 disposed on thetop plate 32 of thegas baffle 31 , and the lifting and fixingcomponents 3502 are connected to thecolumnar partition 3508 to realize the columnar Lifting and lowering ofbaffle 3508. In this embodiment, three layers of annular isolation layers 35 are provided, each layer of theannular isolation layer 35 is provided with six liftablecolumnar partitions 3508, and each of thecolumnar partitions 3508 is connected correspondingly One of the lifting and fixing components 3502 (as shown in FIG. 10 and FIG. 11 ), the lifting and fixingcomponent 3502 includes ascrew rod 3506 and anut 3507 that are threadedly connected, and thescrew rod 3506 is fixedly connected to thecolumnar partition 3508 through the The rotation of thenut 3507 realizes the lifting and lowering of thescrew 3506, thereby realizing the lifting and lowering of thecolumnar partition 3508. Thescrew 3506 is provided with abellows 3505, which is used to realize the lifting and fixingassembly 3502 and the gas barrier. Seal between thetop plate 32 of theplate 31 . Afirst sealing ring 3503 is provided at one end of thecolumnar spacer 3508 in contact with the mountingsubstrate 4 to achieve sealing between thecolumnar spacer 3508 and the mountingsubstrate 4 . Asecond sealing ring 3504 is disposed on thecolumnar partition 3508, thesecond sealing ring 3504 is located above thebottom plate 33 of thegas baffle 31, and thesecond sealing ring 3504 is used to realize the columnar partition. The seal between theplate 3508 and thebottom plate 33 of thegas baffle 31 . Both thefirst sealing ring 3503 and thesecond sealing ring 3504 have properties such as high temperature resistance and corrosion resistance.

如圖9所示，為了與所述的隔離組件34相匹配，所述氣體擋板31的底板33上設置有通孔3301，所述柱狀隔板3508降下時穿過所述通孔3301與所述安裝基板4接觸，所述通孔3301的形狀與所述第二密封圈3504的形狀相互契合，隨著所述柱狀隔板3508下降，所述第二密封圈3504可以與所述通孔3301完全匹配貼合密封在一起，避免所述氣體擋板31內的氣體經過所述通孔3301進入相鄰區域。由於本實施例中採用的是柱狀隔板3508，相應地，與其匹配的通孔3301就是形成在所述底板33上的多個相互獨立的孔狀結構，所述通孔3301並不會將所述底板33割裂，所以在本實施例中無需設置連接組件來支撑底板33和維持通孔3301的形狀。As shown in FIG. 9 , in order to match theisolation assembly 34 , a throughhole 3301 is provided on thebottom plate 33 of thegas baffle 31 , and thecolumnar baffle 3508 passes through the throughhole 3301 and the throughhole 3301 when lowered. The mountingsubstrate 4 is in contact, and the shape of the throughhole 3301 and the shape of thesecond sealing ring 3504 match each other. As thecolumnar partition 3508 descends, thesecond sealing ring 3504 Theholes 3301 are completely matched and sealed together to prevent the gas in thegas baffle 31 from entering the adjacent area through the through holes 3301 . Since thecolumn spacer 3508 is used in this embodiment, the corresponding throughholes 3301 are a plurality of mutually independent hole structures formed on thebottom plate 33, and the throughholes 3301 do not Thebottom plate 33 is split, so in this embodiment, there is no need to provide a connecting component to support thebottom plate 33 and maintain the shape of the throughhole 3301 .

在等離子體處理過程中，由於反應的化學氣體的種類和比例發生了變化，引起等離子體處理速率發生了不均勻，則根據等離子體處理速率的實時變化，通過升降所述隔離組件34中的所述柱狀隔板3508來動態調節所述氣體擋板31與安裝基板4之間的所述圓形氣體分配區域和/或所述環形氣體分配區域的面積，從而動態調節所述氣體噴淋頭5的不同區域的氣體流量，獲得均勻的等離子體處理速率。During the plasma treatment process, due to changes in the types and proportions of the reacted chemical gases, the plasma treatment rate is not uniform. Thecylindrical spacer 3508 is used to dynamically adjust the area of the circular gas distribution area and/or the annular gas distribution area between thegas baffle 31 and the mountingsubstrate 4, so as to dynamically adjust thegas shower head 5 different zones of gas flow to obtain a uniform plasma processing rate.

在本實施例中，所述底板33與安裝基板4之間分隔形成同心設置的一個圓形氣體分配區域301和三個環形氣體分配區域302，所述隔離組件34包含三層同心設置的環狀隔離層35。在等離子體處理過程中，如果緊鄰所述圓形氣體分配區域301的環形氣體分配區域302對應的區域的等離子體處理速率高於其他區域，則說明該區域內的反應氣體密度較大，可以通過擴大該區域對應的環形氣體分配區域302的面積來降低氣體密度。如圖12所示，可將選定的環形氣體分配區域302與相鄰的環形氣體分配區域302之間的所有環狀隔離層35中的所述柱狀隔板3508都升起，具體來說，通過旋轉所述螺桿3506帶動所述柱狀隔板3508上升至所述柱狀隔板3508與所述安裝基板4之間存在間隙，利用所述螺母3507固定所述螺桿3506的當前位置。所述柱狀隔板3508上升的位置極限是要保證所述第一密封圈3503仍然位於所述底板33上的所述通孔3301內，此時所述第一密封圈3503與所述通孔3301密封在一起，避免所述氣體擋板31內的氣體經過所述通孔3301進入相鄰區域。當所述柱狀隔板3508全部升起後，此時所述選定的環形氣體分配區域302與相鄰的環形氣體分配區域302之間完全連通，也即是將所述選定的環形氣體分配區域302的面積擴大了，從而降低了該環形氣體分配區域302內的反應氣體密度，隨之降低了與所述環形氣體分配區域302對應的區域的等離子體處理速率，使該選定的環形氣體分配區域302對應的區域的等離子體處理速率與其他區域達到一致，獲得均勻的等離子體處理速率。In this embodiment, one circulargas distribution area 301 and three annulargas distribution areas 302 are formed concentrically between thebottom plate 33 and the mountingsubstrate 4 , and theisolation component 34 includes three layers of concentric annulargas distribution areas 302 .isolation layer 35 . During the plasma treatment process, if the plasma treatment rate of the region corresponding to the annulargas distribution region 302 adjacent to the circulargas distribution region 301 is higher than that of other regions, it means that the density of the reactive gas in this region is relatively high, which can be obtained by The area of the annulargas distribution area 302 corresponding to this area is enlarged to reduce the gas density. As shown in FIG. 12, thecolumnar partitions 3508 in all the annular isolation layers 35 between the selected annulargas distribution area 302 and the adjacent annulargas distribution area 302 may be raised, specifically, Rotating thescrew 3506 drives thecolumnar partition 3508 to rise until there is a gap between thecolumnar partition 3508 and the mountingsubstrate 4 , and thenut 3507 is used to fix the current position of thescrew 3506 . The limit of the position where thecolumnar partition 3508 rises is to ensure that thefirst sealing ring 3503 is still located in the throughhole 3301 on thebottom plate 33. At this time, thefirst sealing ring 3503 is connected to the through hole. 3301 are sealed together to prevent the gas in thegas baffle 31 from entering the adjacent area through the throughhole 3301 . When thecolumnar partitions 3508 are all raised, the selected annulargas distribution area 302 is in complete communication with the adjacent annulargas distribution area 302, that is, the selected annular gas distribution area is The area of 302 is enlarged, thereby reducing the reactive gas density within the annulargas distribution region 302, which in turn reduces the plasma processing rate in the region corresponding to the annulargas distribution region 302, allowing the selected annular gas distribution region The plasma treatment rate of the region corresponding to 302 is consistent with other regions, and a uniform plasma treatment rate is obtained.

隨著反應的化學氣體的種類和比例發生了變化，圖12中緊鄰所述圓形氣體分配區域301的環形氣體分配區域302對應的區域的等離子體處理速率變為低於其他區域，則說明該區域內的反應氣體密度較小，可以通過縮小該區域對應的環形氣體分配區域302的面積來提高氣體密度。如圖13所示，如果選定的環形氣體分配區域302對應的區域的等離子體處理速率與其他區域相差的較大，則需要將所述選定的環形氣體分配區域302的面積縮小的多一些，所以選擇將最靠近圓心一側的環狀隔離層35中的所述柱狀隔板3508降下，通過旋轉所述螺桿3506帶動所述柱狀隔板3508下降，直至所述第一密封圈3503與所述安裝基板4壓緊貼合密封，利用所述螺母3507固定所述螺桿3506的當前位置，此時所述第二密封圈3504完全嵌入所述通孔3301內，實現所述柱狀隔板3508與所述氣體擋板31的底板33之間的密封，所述選定的環形氣體分配區域302的面積縮小了，從而提高了該環形氣體分配區域302內的反應氣體密度，隨之提高了與所述環形氣體分配區域302對應的區域的等離子體處理速率，使該選定的環形氣體分配區域302對應的區域的等離子體處理速率與其他區域達到一致，獲得均勻的等離子體處理速率。As the types and proportions of the reacted chemical gases change, the plasma processing rate of the region corresponding to the annulargas distribution region 302 adjacent to the circulargas distribution region 301 in FIG. 12 becomes lower than that of other regions, indicating that the The density of the reactive gas in the region is relatively small, and the gas density can be increased by reducing the area of the annulargas distribution region 302 corresponding to the region. As shown in FIG. 13 , if the plasma processing rate of the region corresponding to the selected annulargas distribution region 302 is significantly different from that of other regions, the area of the selected annulargas distribution region 302 needs to be reduced more, so Select to lower thecolumnar partition 3508 in theannular isolation layer 35 on the side closest to the center of the circle, and rotate thescrew 3506 to drive thecolumnar partition 3508 to descend until thefirst sealing ring 3503 is in contact with theThe mounting substrate 4 is pressed against the seal, and thenut 3507 is used to fix the current position of thescrew 3506. At this time, thesecond sealing ring 3504 is completely embedded in the throughhole 3301 to realize thecolumnar partition 3508 With the sealing between thebottom plate 33 of thegas baffle 31, the area of the selected annulargas distribution area 302 is reduced, thereby increasing the density of the reaction gas in the annulargas distribution area 302, thereby increasing the density of the gas in the annulargas distribution area 302. The plasma processing rate of the region corresponding to the annulargas distribution region 302 is determined so that the plasma processing rate of the region corresponding to the selected annulargas distribution region 302 is consistent with other regions, and a uniform plasma processing rate is obtained.

通過設置可升降的柱狀隔板，實現對氣體擋板與安裝基板之間的圓形氣體分配區域和環形氣體分配區域的面積進行動態調節，可以適用於不同的化學氣體環境和不同的氣體比例，令不同的氣體分配區域面積對應不同的化學氣體環境和不同的氣體比例，大大提高了對等離子體處理速率進行調節的靈活性、靈敏度和準確性，提高了等離子體處理速率的均勻性，且操作簡單，提高了設備的適用度，縮短了製程調整試驗周期。By setting up and down column-shaped partitions, the area of the circular gas distribution area and the annular gas distribution area between the gas baffle and the installation substrate can be dynamically adjusted, which can be applied to different chemical gas environments and different gas ratios , so that different gas distribution area areas correspond to different chemical gas environments and different gas ratios, which greatly improves the flexibility, sensitivity and accuracy of adjusting the plasma processing rate, and improves the uniformity of the plasma processing rate. The operation is simple, the applicability of the equipment is improved, and the process adjustment test period is shortened.

儘管本發明的內容已經通過上述優選實施例作了詳細介紹，但應當認識到上述的描述不應被認為是對本發明的限制。在本案所屬技術領域中具有通常知識者閱讀了上述內容後，對於本發明的多種修改和替代都將是顯而易見的。因此，本發明的保護範圍應由所附的申請專利範圍來限定。While the content of the present invention has been described in detail by way of the above preferred embodiments, it should be appreciated that the above description should not be construed as limiting the present invention. Various modifications and substitutions to the present invention will be apparent to those of ordinary skill in the art to which the present application pertains after reading the above content. Therefore, the protection scope of the present invention should be defined by the appended claims.

1:真空反應腔2:外部供氣裝置3:氣體流量調節裝置301:圓形氣體分配區域302:環形氣體分配區域31:氣體擋板32:頂板33:底板3301:通孔3302:氣體通孔3303:環狀結構34:隔離組件35:環狀隔離層3501:環狀隔板3502:升降固定組件3503:第一密封圈3504:第二密封圈3505:波紋管3506:螺桿3507:螺母3508:柱狀隔板3509:扇環狀隔板36:連接組件4:安裝基板41:氣體通孔5:氣體噴淋頭51:氣體通孔6:等離子體7:基座8:靜電夾盤9:基片1: Vacuum reaction chamber2: External air supply device3: Gas flow adjustment device301: Circular gas distribution area302: annular gas distribution area31: Gas baffle32: Top plate33: Bottom plate3301: Through hole3302: Gas Through Holes3303: Ring structure34: Isolation Components35: Ring isolation layer3501: Ring Separator3502: Lifting and fixing components3503: The first sealing ring3504: Second seal3505: Bellows3506: Screw3507: Nut3508: Column Separator3509: Fan ring partition36: Connect Components4: Install the substrate41: Gas through hole5: Gas shower head51: Gas through hole6: Plasma7: Pedestal8: Electrostatic chuck9: Substrate

圖1是本發明提供的一種具有氣體流量調節裝置的等離子體處理裝置的結構示意圖。圖2是氣體流量調節裝置的結構示意圖。圖3是氣體流量調節裝置的俯視圖。圖4是本發明一種實施例中的隔離組件的結構示意圖。圖5是本發明一種實施例中的環狀隔離層的俯視圖。圖6是本發明一種實施例中的環狀隔離層的仰視圖。圖7和圖8是本發明一種實施例中動態調節氣體擋板中氣體分配區域的面積的示意圖。圖9是本發明另一種實施例中的隔離組件的結構示意圖。圖10是本發明另一種實施例中的環狀隔離層的俯視圖。圖11是本發明另一種實施例中的環狀隔離層的仰視圖。圖12和圖13是本發明另一種實施例中動態調節氣體擋板中氣體分配區域的面積的示意圖。FIG. 1 is a schematic structural diagram of a plasma processing device with a gas flow regulating device provided by the present invention.FIG. 2 is a schematic structural diagram of a gas flow regulating device.FIG. 3 is a plan view of the gas flow regulating device.FIG. 4 is a schematic structural diagram of an isolation assembly in an embodiment of the present invention.FIG. 5 is a top view of the annular isolation layer in one embodiment of the present invention.Figure 6 is a bottom view of the annular spacer layer in one embodiment of the present invention.7 and 8 are schematic diagrams of dynamically adjusting the area of the gas distribution area in the gas baffle according to an embodiment of the present invention.FIG. 9 is a schematic structural diagram of an isolation assembly in another embodiment of the present invention.FIG. 10 is a top view of the annular isolation layer in another embodiment of the present invention.Figure 11 is a bottom view of the annular spacer layer in another embodiment of the present invention.12 and 13 are schematic diagrams of dynamically adjusting the area of the gas distribution area in the gas baffle according to another embodiment of the present invention.

301:圓形氣體分配區域301: Circular gas distribution area

302:環形氣體分配區域302: annular gas distribution area

31:氣體擋板31: Gas baffle

32:頂板32: Top plate

33:底板33: Bottom plate

3301:通孔3301: Through hole

3302:氣體通孔3302: Gas Through Holes

3303:環狀結構3303: Ring structure

34:隔離組件34: Isolation Components

4:安裝基板4: Install the substrate

Claims (24)

Translated fromChinese

一種氣體流量調節裝置，其設置在等離子體處理裝置的一真空反應腔內，該氣體流量調節裝置與一外部供氣裝置連接，其中，該氣體流量調節裝置通過一安裝基板實現對氣體噴淋頭的不同區域的面積進行調節，該氣體流量調節裝置包含：一氣體擋板，包含相對設置的一頂板和一底板，該底板與該安裝基板配合形成同心設置的一圓形氣體分配區域和至少一環形氣體分配區域；一隔離組件，可升降地設置於該氣體擋板與該安裝基板之間，用於對該圓形氣體分配區域和/或該環形氣體分配區域的面積進行調節。A gas flow regulating device, which is arranged in a vacuum reaction chamber of a plasma processing device, the gas flow regulating device is connected with an external gas supply device, wherein the gas flow regulating device realizes the control of the gas shower head through a mounting substrate The area of different regions can be adjusted, the gas flow adjustment device includes:a gas baffle, comprising a top plate and a bottom plate oppositely arranged, the bottom plate cooperates with the mounting substrate to form a concentrically arranged circular gas distribution area and at least one annular gas distribution area;An isolation component, which can be lifted and lowered between the gas baffle and the mounting substrate, is used to adjust the area of the circular gas distribution area and/or the annular gas distribution area.如請求項1所述的氣體流量調節裝置，其中，該隔離組件包含至少兩層同心設置的一環狀隔離層，升降不同的該環狀隔離層可以改變該圓形氣體分配區域和/或該環形氣體分配區域的面積。The gas flow regulating device according to claim 1, wherein the isolation component comprises at least two concentrically arranged annular isolation layers, and the annular isolation layers with different lifting and lowering can change the circular gas distribution area and/or the The area of the annular gas distribution area.如請求項2所述的氣體流量調節裝置，其中，該環狀隔離層包含一環狀隔板，該環狀隔板為可升降活動連接。The gas flow regulating device according to claim 2, wherein the annular isolation layer comprises an annular baffle, and the annular baffle is a movable connection that can be raised and lowered.如請求項3所述的氣體流量調節裝置，其中，該環狀隔離層還包含設置在該氣體擋板的該頂板上的一升降固定組件，該升降固定組件連接該環狀隔板，實現該環狀隔板的升降。The gas flow regulating device according to claim 3, wherein the annular isolation layer further comprises a lifting and fixing component disposed on the top plate of the gas baffle, and the lifting and fixing component is connected to the annular baffle to realize the The lifting and lowering of the annular partition.如請求項4所述的氣體流量調節裝置，其中，該環狀隔板與該安裝基板接觸的一端設置有一第一密封圈，用於實現該環狀隔板與該安裝基板之間的密封。The gas flow regulating device according to claim 4, wherein a first sealing ring is provided at the end of the annular partition plate in contact with the mounting substrate, for realizing sealing between the annular partition plate and the mounting substrate.如請求項4所述的氣體流量調節裝置，其中，該環狀隔板上設置有一第二密封圈，該第二密封圈位於該氣體擋板的該底板上方，該第二密封圈用於實現該環狀隔板與該氣體擋板的該底板之間的密封。The gas flow regulating device according to claim 4, wherein a second sealing ring is arranged on the annular partition, the second sealing ring is located above the bottom plate of the gas baffle, and the second sealing ring is used to realize A seal between the annular baffle and the bottom plate of the gas baffle.如請求項6所述的氣體流量調節裝置，其中，該氣體擋板的該底板上具有一通孔，該環狀隔板降下時穿過該通孔與該安裝基板接觸。The gas flow regulating device according to claim 6, wherein the bottom plate of the gas baffle plate has a through hole, and the annular partition plate passes through the through hole and contacts the mounting substrate when it is lowered.如請求項7所述的氣體流量調節裝置，其中，該通孔的形狀與該第二密封圈的形狀相互契合，隨著該環狀隔板下降，該第二密封圈可以與該通孔完全匹配貼合密封在一起，避免該氣體擋板內的氣體經過該通孔進入相鄰區域。The gas flow regulating device according to claim 7, wherein the shape of the through hole and the shape of the second sealing ring match each other, and as the annular baffle descends, the second sealing ring can be completely aligned with the through hole The mating fit is sealed together to prevent the gas in the gas baffle from entering the adjacent area through the through hole.如請求項7所述的氣體流量調節裝置，其中，該氣體擋板還包含一連接組件，該連接組件的一端連接該氣體擋板的該頂板，該連接組件的另一端連接該氣體擋板的該底板，用以支撑該氣體擋板的該底板並維持該通孔的形狀。The gas flow regulating device according to claim 7, wherein the gas baffle further comprises a connecting assembly, one end of the connecting assembly is connected to the top plate of the gas baffle, and the other end of the connecting assembly is connected to the gas baffle The bottom plate is used to support the bottom plate of the gas baffle and maintain the shape of the through hole.如請求項2所述的氣體流量調節裝置，其中，該環狀隔離層包含沿圓周線間隔設置的至少兩個柱狀隔板，以及設置在相鄰的該柱狀隔板之間的一扇環狀隔板，該柱狀隔板可升降活動連接，該扇環狀隔板固定設置。The gas flow regulating device according to claim 2, wherein the annular isolation layer comprises at least two columnar partitions arranged at intervals along the circumference, and a fan arranged between the adjacent columnar partitions A ring-shaped partition, the column-shaped partition can be moved up and down, and the fan-shaped partition is fixedly arranged.如請求項10所述的氣體流量調節裝置，其中，該環狀隔離層還包含設置在該氣體擋板的該頂板上的一升降固定組件，該升降固定組件連接該柱狀隔板，實現該柱狀隔板的升降。The gas flow regulating device according to claim 10, wherein the annular isolation layer further comprises a lifting and fixing component disposed on the top plate of the gas baffle, and the lifting and fixing component is connected to the columnar partition to realize the Lifting and lowering of columnar partitions.如請求項11所述的氣體流量調節裝置，其中，該柱狀隔板與該安裝基板接觸的一端設置有一第一密封圈，用於實現該柱狀隔板與該安裝基板之間的密封。The gas flow regulating device according to claim 11, wherein a first sealing ring is provided at the end of the columnar separator in contact with the mounting substrate, for realizing sealing between the columnar separator and the mounting substrate.如請求項11所述的氣體流量調節裝置，其中，該柱狀隔板上設置有一第二密封圈，該第二密封圈位於該氣體擋板的該底板上方，該第二密封圈用於實現該柱狀隔板與該氣體擋板的該底板之間的密封。The gas flow regulating device according to claim 11, wherein a second sealing ring is arranged on the columnar partition, the second sealing ring is located above the bottom plate of the gas baffle, and the second sealing ring is used to realize Sealing between the column spacer and the bottom plate of the gas baffle.如請求項11所述的氣體流量調節裝置，其中，該柱狀隔板上設置有一第三密封圈，用於實現該柱狀隔板與該扇環狀隔板之間的密封。The gas flow regulating device according to claim 11, wherein a third sealing ring is provided on the columnar partition for realizing the sealing between the columnar partition and the fan annular partition.如請求項13所述的氣體流量調節裝置，其中，該氣體擋板的該底板上具有一通孔，該柱狀隔板穿過該通孔與該安裝基板接觸。The gas flow regulating device according to claim 13, wherein the bottom plate of the gas baffle plate has a through hole, and the column spacer passes through the through hole to contact the mounting substrate.如請求項15所述的氣體流量調節裝置，其中，該通孔的形狀與該第二密封圈的形狀相互契合，隨著該柱狀隔板下降，該第二密封圈可以與該通孔完全匹配貼合密封在一起，避免該氣體擋板內的氣體經過該通孔進入相鄰區域。The gas flow regulating device according to claim 15, wherein the shape of the through hole and the shape of the second sealing ring match each other, and as the columnar partition descends, the second sealing ring can be completely aligned with the through hole The mating fit is sealed together to prevent the gas in the gas baffle from entering the adjacent area through the through hole.如請求項4或11所述的氣體流量調節裝置，其中，該升降固定組件包含螺紋連接的一螺桿和一螺母，該螺桿固定連接該環狀隔板或該柱狀隔板，通過該螺母的旋轉實現該螺桿的升降，從而實現該環狀隔板或該柱狀隔板的升降。The gas flow regulating device according to claim 4 or 11, wherein the lifting and fixing component comprises a screw and a nut that are threadedly connected, the screw is fixedly connected to the annular baffle or the columnar baffle, The rotation realizes the lifting and lowering of the screw, thereby realizing the lifting and lowering of the annular separator or the columnar separator.如請求項17所述的氣體流量調節裝置，其中，該螺桿上設置有一波紋管，用於實現該升降固定組件與該氣體擋板的該頂板之間的密封。The gas flow regulating device according to claim 17, wherein a bellows is arranged on the screw rod to achieve sealing between the lifting and fixing assembly and the top plate of the gas baffle.如請求項1所述的氣體流量調節裝置，其中，該氣體擋板的該底板上設置多個氣體通孔，用於實現對該圓形氣體分配區域和該環形氣體分配區域的氣體輸送。The gas flow regulating device according to claim 1, wherein a plurality of gas through holes are provided on the bottom plate of the gas baffle plate to realize gas delivery to the circular gas distribution area and the annular gas distribution area.如請求項1所述的氣體流量調節裝置，其中，該安裝基板上設置多個氣體通孔，該氣體通孔與該氣體噴淋頭上的氣體通孔相對應。The gas flow regulating device according to claim 1, wherein a plurality of gas through holes are provided on the mounting substrate, and the gas through holes correspond to the gas through holes on the gas shower head.一種等離子體處理裝置，其中，包含一真空反應腔，該真空反應腔內設置一用於支撑基片的基座，該真空反應腔內還設置一氣體噴淋頭，該氣體噴淋頭設置在一安裝基板上，該安裝基板與請求項1-20中任意一項所述的一氣體流量調節裝置配合，實現對該氣體噴淋頭不同區域的面積進行調節。A plasma processing device, which includes a vacuum reaction chamber, a base for supporting a substrate is arranged in the vacuum reaction chamber, and a gas shower head is also arranged in the vacuum reaction chamber, and the gas shower head is arranged in the On a mounting substrate, the mounting substrate cooperates with a gas flow adjustment device as described in any one of claims 1-20, so as to adjust the areas of different regions of the gas shower head.一種採用如請求項1-20中任意一項所述的氣體流量調節裝置實現的等離子體處理裝置內的氣體流量調節方法，其中，選定與等離子體處理速率不均勻區域對應的該圓形氣體分配區域和/或該環形氣體分配區域的範圍，通過調節該環狀隔板的升降，或通過調節該柱狀隔板的升降，實現對該圓形氣體分配區域和/或該環形氣體分配區域的面積進行動態調節，從而使該選定的圓形氣體分配區域和/或環形氣體分配區域對應的區域的等離子體處理速率與其他區域達到一致。A gas flow adjustment method in a plasma processing device realized by using the gas flow adjustment device according to any one of claims 1-20, wherein the circular gas distribution corresponding to the uneven region of the plasma processing rate is selected Area and/or the range of the annular gas distribution area, by adjusting the rise and fall of the annular baffle, or by adjusting the rise and fall of the columnar baffle, to achieve the circular gas distribution area and/or the annular gas distribution area. The area is dynamically adjusted so that the plasma processing rate of the region corresponding to the selected circular gas distribution region and/or annular gas distribution region is consistent with other regions.如請求項22所述的等離子體處理裝置內的氣體流量調節方法，其中，該選定的圓形氣體分配區域和/或環形氣體分配區域對應的區域的等離子體處理速率高於其他區域，則通過調節該環狀隔板或柱狀隔板上升，以增加該圓形氣體分配區域和/或該環形氣體分配區域的面積。The method for adjusting gas flow in a plasma processing device according to claim 22, wherein the selected circular gas distribution area and/or the area corresponding to the annular gas distribution area has a higher plasma processing rate than other areas, by The rise of the annular baffle or columnar baffle is adjusted to increase the area of the circular gas distribution area and/or the annular gas distribution area.如請求項22所述的等離子體處理裝置內的氣體流量調節方法，其中，該選定的圓形氣體分配區域和/或環形氣體分配區域對應的區域的等離子體處理速率低於其他區域，則通過調節該環狀隔板或該柱狀隔板下降，以减少該圓形氣體分配區域和/或該環形氣體分配區域的面積。The gas flow adjustment method in a plasma processing device according to claim 22, wherein the plasma processing rate of the region corresponding to the selected circular gas distribution region and/or the annular gas distribution region is lower than that of other regions, the The lowering of the annular baffle or the columnar baffle is adjusted to reduce the area of the circular gas distribution area and/or the annular gas distribution area.

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