TW202202649A - 基板處理方法 - Google Patents
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Abstract
Description
一或多個實施例係關於基板處理方法，且更具體地，係關於圖案化基板上所形成之結構的基板處理方法。
當使用電漿在基板上之圖案化結構上沉積薄膜時，自由基活性物種可使圖案化結構受損。例如，在圖案化結構（諸如旋塗式硬遮罩（spin-on-hardmask，SOH））包括聚合材料的情況下，可能會發生旋塗式硬遮罩膜的損壞。更詳細地，當在其上形成旋塗式硬遮罩膜之基板上使用氧沉積薄膜時，藉由電漿施加而產生氧自由基活性物種，且薄膜下之旋塗式硬遮罩膜與氧自由基起反應，從而改變膜品質或導致旋塗式硬遮罩膜之實體損壞。導因於下部圖案化結構之損壞，圖案之間的間距在後續圖案化製程中可以是非恆定的。
一或多個實施例包括一種藉由防止一下部圖案化結構損壞，而改善一圖案化製程的臨界尺寸均勻性之方法。
額外的態樣將在下列描述中部分地提出，且部分將從描述中明白，或者可藉由實行本揭露所提出的實施例而習得。
根據一或多個實施例，一種基板處理方法包括藉由執行一第一循環複數次，來形成具有一特定厚度的一第一薄膜，第一循環包括在一結構上供應一第一反應物及吹掃一殘餘物；及藉由改變具有特定厚度之第一薄膜的一化學組成，來形成一第二薄膜。
根據基板處理方法之一實例，第一反應物可包括一含矽源氣體。
根據基板處理方法之另一實例，可在第一循環之至少一部分期間施加電漿，且第一反應物可藉由電漿解離以吸附此結構上之第一薄膜。
根據基板處理方法之另一實例，在第一循環期間，供應不與此結構起反應的一第二反應物，且第一薄膜可藉由第二反應物來緻密化（densified）。
根據基板處理方法之另一實例，一第二循環係在形成第二薄膜期間執行複數次，其中第二循環可包括在具有特定厚度的第一薄膜上供應一第三反應物、藉由施加電漿來誘發第一薄膜與第三反應物之間的一反應、及吹掃一殘餘物。
根據基板處理方法之另一實例，第三反應物包括氧，且在誘發反應期間，第一薄膜可被氧化。
根據基板處理方法之另一實例，第三反應物可與此結構具有反應性。
根據基板處理方法之另一實例，第一薄膜可具有大於或等於一特定厚度的一厚度，此厚度允許在第三反應物與第一薄膜起反應的同時所發生的此結構之一損耗小於一特定值。
根據基板處理方法之另一實例，特定厚度可以是至少15埃（Angstroms）。
根據基板處理方法之另一實例，在第二循環期間所吹掃的殘餘物可包括CH4、C2H5、N(C2H5)2、CO2、NO、H2O、及H2中之至少一者。
根據基板處理方法之另一實例，第一薄膜包括構成第一反應物之元素的一混合物，且第一薄膜可藉由使混合物吸附在此結構上而形成。
根據基板處理方法之另一實例，第一薄膜可包括一化學鍵，其係藉由混合物之一元素與構成此結構之元素中的至少一者起反應而形成。
根據基板處理方法之另一實例，基板處理方法可更包括移除第二薄膜的至少一部分，以形成用於此結構之一間隔物圖案、移除此結構、及使用間隔物圖案作為一遮罩，來圖案化一下部結構。
根據基板處理方法之另一實例，間隔物圖案可包括從下部結構突出之一第一突出部、一第二突出部、及一第三突出部，且第一突出部與第二突出部之間的一第一距離及第二突出部與第三突出部之間的一第二距離之一差值可小於5埃。
根據基板處理方法之另一實例，基板處理方法可更包括在第二薄膜上形成具有與第二薄膜相同成分的一第三薄膜。
根據基板處理方法之另一實例，基板處理方法可更包括藉由在第二薄膜及第三薄膜上執行回蝕（etch-back），來使此結構暴露、移除此結構、及使用第二薄膜及第三薄膜之剩餘部分作為一遮罩來圖案化下部結構。
根據基板處理方法之另一實例，在形成第三薄膜期間執行一第三循環複數次，其中第三循環可包括在第二薄膜上供應第一反應物、吹掃第一反應物之殘餘物、在一電漿大氣（plasma atmosphere）下供應第三反應物、及吹掃第三反應物之一殘餘物。
根據一或多個實施例，一種基板處理方法包括藉由在具有一圖案化結構之一基板上供應一第一反應物及一第二反應物來形成一第一薄膜、供應一第三反應物、及將第一薄膜轉化成一第二薄膜。
根據基板處理方法之一實例，基板處理方法可更包括藉由供應第一反應物及第三反應物，而在第二薄膜上形成一第三薄膜。
根據一或多個實施例，一種基板處理方法包括藉由執行一第一循環複數次，來形成吸附在圖案化旋塗式硬遮罩結構上之具有一特定厚度的一第一薄膜，第一循環包括在一圖案化旋塗式硬遮罩（SOH）結構上供應一含矽源氣體及吹掃一殘餘物；藉由執行一第二循環複數次，來改變第一薄膜之一化學組成而形成一第二薄膜，第二循環包括供應與圖案化旋塗式硬遮罩結構起反應，並與含矽源氣體起反應之一反應氣體及吹掃一殘餘物；及藉由執行一第三循環複數次，而在第二薄膜上形成具有與第二薄膜相同成分之一第三薄膜，第三循環包括供應含矽源氣體及供應反應氣體。
現將詳細地參照實施例，其等之實例係繪示於隨附圖式中，其中通篇之相似的參考數字係指相似的元件。在此點上，本實施例可具有不同形式，且不應解譯為受限於本文中所提出的描述。因此，下文僅藉由參照圖式來描述實施例以解釋本說明書的態樣。如本文中所使用，用語「及/或（and/or）」包括相關聯列表項目中之一或多者的任何及所有組合。當諸如「…中之至少一者（at least one of）」之表述居於元件列表之前時，其修飾整個元件列表而非修飾列表之個別元件。
在下文中，將參照隨附圖式更完整地描述一或多個實施例。
在此點上，本實施例可具有不同形式，且不應解譯為受限於本文中所提出的描述。反而，這些實施例係被提供，使得本揭露將周密且完整，且將向所屬技術領域中具有通常知識者完整地傳達本揭露之範疇。
本文中所使用之用語係用於描述具體實施例的目的，且並非意欲限制本揭露。除非上下文中另有清楚指示，如本文中所使用，單數形式「一（a/an）」及「該（the）」亦意欲包括複數形式。將進一步瞭解，本文中所使用之用語「包括（includes/including）」及/或「包含（comprises/comprising）」述明所述特徵、整數、步驟、製程、構件、組件、及/或其等之群組的存在，但並未排除一或多個其他特徵、整數、步驟、製程、構件、組件、及/或其等之群組的存在或添加。如本文中所使用，用語「及/或（and/or）」包括相關聯列表項目中之一或多者的任何及所有組合。
將瞭解，雖然可在本文中使用用語「第一（first）」、「第二（second）」等以描述各種構件、組件、區域、層、及/或區段，這些構件、組件、區域、層、及/或區段不應受到這些用語的限制。這些用語不表示任何順序、數量、或重要性，而是僅用以區別一個組件、區域、層、及/或區段與另一組件、區域、層、及/或區段。因此，在不偏離實施例之教義的情況下，下文所討論之第一構件、組件、區域、層、或區段可稱為第二構件、組件、區域、層、或區段。
在本揭露中，「氣體」可包括蒸發之固體及/或液體，並可包括單一氣體或氣體混合物。在本揭露中，藉由噴淋頭引入反應室中之製程氣體可包括前驅物氣體及添加劑氣體。前驅物氣體及添加劑氣體一般可作為混合氣體引入或可分開地引入反應空間中。前驅物氣體可與載體氣體（諸如惰性氣體）一起引入。添加劑氣體可包括稀釋氣體（諸如反應氣體及惰性氣體）。反應氣體及稀釋氣體可混合或分開地引入反應空間中。前驅物可包括二或更多個前驅物，且反應氣體可包括二或更多個反應氣體。前驅物可以是化學吸附至基板上且一般含有構成介電膜基質（matrix of a dielectric film）之主結構之類金屬（metalloid）或金屬元素的氣體，而用於沉積的反應氣體可以是當激發以將原子層或單層固定在基板上時，與化學吸附至基板上之前驅物起反應的氣體。用語「化學吸附（chemisorption）」可指化學飽和吸附。可將有別於製程氣體之氣體（也就是未穿過噴淋頭而引入之氣體）用以密封反應空間，且其可包括密封氣體（諸如惰性氣體）。在一些實施例中，用語「膜（film）」可指用以覆蓋整個靶材（target）或相關表面之實質上不具有針孔（pinholes）之在垂直於厚度方向的方向上連續地延伸的層，或者可指單純覆蓋靶材或相關表面的層。在一些實施例中，用語「層（layer）」可指形成在表面上之具有任何厚度的結構或者膜或非膜結構之同義詞。膜或層可包括離散（discrete）單一膜或層或者具有一些特性的多個膜或層，且相鄰的膜或層之間的界線可以是清楚或不清楚的，並可基於相鄰的膜或層之物理、化學、及/或一些其他特性、形成製程或序列、及/或功能或目的而設定。
在本揭露中，「含有Si-O鍵（containing a Si-O bond）」的表述可稱為特徵在於一個Si-O鍵或多個Si-O鍵，其具有實質上由一個Si-O鍵或多個Si-O鍵構成的主骨架（skeleton）及/或具有實質上由一或多個Si-O鍵構成的取代基。氮化矽層可以是含有Si-O鍵的介電層，並可包括氧化矽層（SiN）及氮氧化矽層（SiON）。
在本揭露中，「相同材料（same material）」的表述應解譯為意指主成分（成分）相同。例如，當第一層及第二層兩者都係氮化矽層並由相同材料形成時，第一層可選自由Si2N、SiN、Si3N4、及Si2N3所組成之群組，且第二層亦可選自上述群組，但此第二層之具體的膜品質可不同於第一層的膜品質。
此外，在本揭露中，根據可操作範圍可基於一般工作來判定，任何兩個變數可構成變數之可操作範圍，且任何指示範圍可包括或排除端點。此外，任何指示變數的數值可指精確值或近似值且可包括等效值（不管此等數值是否以「約」來指示），並可指平均值、中間值、代表值、多數值、或類似者。
在本揭露中未具體指明條件及/或結構之處，所屬技術領域中具有通常知識者可鑒於本揭露而憑借慣例實驗輕易地提供這些條件及/或結構。在所述的所有實施例中，一實施例中所用的任何組件可以其任何等效組件取代，包括針對預定用途在本文中明確地、必要地、或基本上予以描述者，且除此之外，本揭露可類似地應用至裝置及方法。
在下文中將參照隨附圖式描述本揭露之實施例。在圖式中，由於例如製造技術及/或公差而可預期所繪示之形狀的變體。因此，本揭露之實施例不應解譯為受限於本文中所繪示的特定區域形狀，而可包括例如由製造製程所導致的形狀偏差。
第1圖至第6圖係繪示根據實施例之製造半導體裝置之方法的剖視圖。
參照第1圖，在基板100上形成第一層110，其係欲蝕刻的膜。欲蝕刻的膜可以是絕緣層（諸如氮化矽層）或用於圖案化下部層之遮罩層（諸如非晶碳層（amorphous carbon layer，ACL））。
其後，第二層係形成在第一層110上。第二層可包括作為硬遮罩之聚合材料，其可藉由灰化及/或剝膜製程輕易地移除。例如，第二層可包括旋塗式硬遮罩（spin-on-hardmask，SOH）膜或碳旋塗式硬遮罩（carbon spin-on-hardmask，C-SOH）膜。接著，將第二層圖案化，以使第一層110之至少一部分暴露。因此，可提供基板100，其包括作為欲蝕刻膜之第一層110及形成在第一層110上之第一圖案化結構120。
參照第2圖，具有特定厚度之第一薄膜130係形成在第一層110之暴露表面及作為第二層之第一圖案化結構120上。第一薄膜130可藉由執行第一循環複數次來形成，此第一循環包括將第一反應物供應至第一圖案化結構120上、及吹掃殘餘物。第一薄膜130的厚度可隨著第一循環的重複而增加。
在一些實施例中，可調整第一薄膜130之厚度，以達成特定目的。例如，在形成第一薄膜130之後，第一薄膜130可藉由與第三反應物起反應，而改變成第二薄膜135（第3圖）。可調整第一薄膜130之厚度，以防止下伏第一圖案化結構120受損，其可發生在將第一薄膜130改變成第二薄膜135之製程中（參照第3圖）。此將參照第4圖詳細地描述。
用以形成第一薄膜130之第一反應物可包括含矽源氣體。在一實例中，含矽源氣體係供應至第一圖案化結構120上，使得吸附（例如化學吸附）在結構上的含矽材料層可形成為第一薄膜130。
例如，第一反應物可以是胺基矽烷基含矽源氣體，其含有烷基（諸如甲基（-CnH2n+1）或乙基（-CnH2n+2））。也就是說，第一反應物可包括含有碳元素之矽源。因此，由第一反應物形成的材料層可包括矽元素及碳元素。
在一些實例中，第一薄膜130可包括構成第一反應物之元素的混合物。第一薄膜130可藉由使混合物吸附在第一圖案化結構120上而形成。
例如，當第一反應物包括矽元素及碳元素時，可形成包括矽元素及碳元素之混合物的第一薄膜130。由第一薄膜130組成之混合物可包括元素之間的鍵結結構，在其中破壞Si源分子片段，或者可包括構成第一反應物之個別元素（例如Si、C、N、或H）。換言之，混合物可以是由弱於化學鍵之物理鍵組成的弱鍵（weak bonds）之混合物。
在一些實施例中，可在第一循環之至少一部分期間施加電漿，以形成第一薄膜130。第一反應物係藉由電漿來解離，且第一薄膜130可吸附在第一圖案化結構120上。
在一些實施例中，為了促進第一反應物之解離及/或使第一薄膜130緻密化，可在第一循環期間供應第二反應物。例如，在施加上述電漿期間，可供應不與第一圖案化結構120起反應的第二反應物。例如，第二反應物可包括惰性元素（諸如氬（Ar））。藉由供應第二反應物，可使第一薄膜130緻密化。
在一些實施例中，在形成第一薄膜130的同時，第一薄膜130的一部分可與下伏的第一圖案化結構120起反應。例如，第一薄膜130可包括由構成第一薄膜130之混合物中的一個元素所形成的化學鍵，其與構成第一圖案化結構120之元素中的至少一者起反應。
作為一更特定的實例，第一反應物可包括矽元素，且因此由第一反應物形成之第一薄膜130的混合物可包括矽元素。與此同時，第一薄膜130下方之第一圖案化結構120可包括氧元素。在此情況下，第一薄膜130之厚度的一部分可含有Si-O鍵。具體地，Si-O鍵可形成在第一薄膜130相鄰於第一圖案化結構120的一部分中。
Si-O鍵並非在使第一圖案化結構120氧化的製程中形成，而係藉由使氧元素的一些者（例如，O2封端位點（terminated site）的一些氧元素或懸鍵（dangling bonded）氧元素）鍵結在第一圖案化結構120的頂部上而形成，其中矽成分在第一薄膜130的頂部處。因此，可在不損壞第一圖案化結構120的情況下形成具有Si-O鍵之第一薄膜130。
此外，Si-O鍵可充當保護膜protective film （），以防止第一圖案化結構120在將第一薄膜130改變成第二薄膜135之後續製程中受損。換言之，形成在第一薄膜130之部分厚度範圍中的氧化矽層係在不損壞第一圖案化結構120的情況下形成，且氧化矽層可在後續製程期間保護第一圖案化結構120。
在一些實施例中，當第一圖案化結構120係旋塗式硬遮罩結構時，可在圖案化旋塗式硬遮罩結構上供應含矽源氣體。當由於供應含矽源氣體而形成第一薄膜130之一部分時，殘餘物可被吹掃。藉由將這些操作（氣體供應及吹掃）作為一個循環執行，並執行此循環複數次，可形成吸附在圖案化旋塗式硬遮罩結構上之具有特定厚度的第一薄膜130。
參照第3圖，在形成具有特定厚度的第一薄膜130之後，藉由改變第一薄膜130的化學組成，來執行第二薄膜135之形成。例如，可供應與第一薄膜130起反應的第三反應性材料。第一薄膜130可由於供應第三反應物而改變成第二薄膜135。
在形成第二薄膜135期間，可執行第二循環複數次。第二循環可包括將第三反應物供應至具有特定厚度之第一薄膜130及吹掃殘餘物。為了促進第三反應材料與第一薄膜130之間的反應，可施加電漿。也就是說，在第二循環期間，可額外執行藉由施加電漿，來誘發第一薄膜130與第三反應物之間的反應。
在一實例中，第三反應物可包括氧。在此情況下，第二薄膜135可藉由在誘發反應期間使第一薄膜130氧化而形成。例如，當第一圖案化結構120係旋塗式硬遮罩結構並供應含矽源氣體以形成第一薄膜130時，第一薄膜130的化學成分可藉由供應與含矽源氣體起反應的反應氣體（例如氧氣體）而改變（例如氧化）。
第三反應物可具有與第一圖案化結構120之反應性。例如，如上文所述，第三反應材料可包括氧，且因此，當第一圖案化結構120係旋塗式硬遮罩結構時，第三反應材料可氧化旋塗式硬遮罩結構的下部層。
當藉由供應第三反應材料來形成第二薄膜135時，有必要防止第一薄膜130下方之旋塗式硬遮罩結構氧化。為此目的，可形成第一薄膜130以具有大於或等於特定厚度的厚度。特定厚度可允許在第三反應物與第一薄膜130起反應的同時所發生之下伏第一圖案化結構120的損耗（loss）小於特定值。例如，第一薄膜130之特定厚度可以是至少15埃（參見第15圖）。
另一方面，可調整第二循環之重複次數，以防止第一圖案化結構120受損。例如，在其中供應氧氣以使具有特定厚度的第一薄膜130氧化、及供應電漿之第二循環的情況下，過度重複第二循環可導致第一圖案化結構120氧化。因此，第二循環可在不發生第一圖案化結構120之氧化的範圍內重複。例如，第二循環可重複1至10次，且在一特定實例中，第二循環可重複1至5次（參見下表1）。
在執行以形成第二薄膜135之第二循環期間吹掃的殘餘物可包括第一薄膜130之成分元素。例如，第一薄膜130可包括元素之間的鍵結結構在其中破壞之Si源分子片段（例如Si-N-、Si-C-、Si-H-、及Si-CnH2n+1），或者個別元素（例如Si、C、N、及H）。在此情況下，可在第二循環期間吹掃包括CH4、C2H5、N(C2H5)2、CO2、NO、H2O、及H2中之至少一者的殘餘物。
參照第4圖，在第二薄膜135上形成第三薄膜140。為了形成第三薄膜140，可使用原子層沉積（atomic layer deposition，ALD）製程。例如，可藉由重複第三循環複數次來形成具有想要的厚度之第三薄膜140，此第三循環包括源供應操作、源吹掃操作、反應物供應操作、及反應物吹掃操作。在另一實例中，使用第一反應物及第三反應物之化學氣相沉積（chemical vapor deposition，CVD）製程可用以形成第三薄膜140。可在化學氣相沉積製程期間使用循環化學氣相沉積製程。
在使用原子層沉積製程之一些實施例中，上述之第一反應物（例如含矽源氣體）可用作源，且第三反應物（例如，與源氣體起反應之反應性氣體（諸如氧氣））可用作反應物。因此，第三薄膜140可包括與第二薄膜135相同的成分。
例如，第三循環可包括在第二薄膜135上供應第一反應物及在電漿大氣下供應第三反應物。當使用原子層沉積製程以形成第三薄膜140時，第三循環可更包括在供應第一反應物之後吹掃殘餘物、及在供應第三反應物之後吹掃殘餘物。
參照第5圖，形成用於結構之間隔物圖案SP。為此目的，可移除第二薄膜135之至少一部分。更詳細地，藉由移除第二薄膜135及第三薄膜140之至少一部分來形成用於第一圖案化結構120之間隔物圖案SP。例如，藉由在第二薄膜135及第三薄膜140上執行濕式蝕刻製程，可藉由回蝕形成在第一圖案化結構120上之第二薄膜135及第三薄膜140來形成間隔物圖案SP。
參照第6圖，其後，移除第一圖案化結構120。因此，作為欲蝕刻膜的第一層110可使用第二薄膜135及第三薄膜140之剩餘部分（亦即，間隔物圖案SP）作為遮罩進行蝕刻。如上文所述，根據一些實施例，下部結構之圖案化可藉由使用具有雙重結構（亦即，第二薄膜135及第三薄膜140）之薄膜形成間隔物圖案SP及藉由使用間隔物圖案SP作為遮罩（mask）來執行。
在一些其他實施例中，可僅使用第二薄膜135形成間隔物圖案SP'（第9圖）。在此情況下，將移除第二薄膜135之至少一部分以形成間隔物圖案（參見第9圖）。在使用具有雙重結構（double structure）之薄膜形成間隔物圖案SP（第5圖）及僅使用具有單層結構（single layer structure）之薄膜形成間隔物圖案SP'（第9圖）的兩種情況下，應注意，至少一部分的第二薄膜135係移除以形成間隔物圖案。
如上述般形成之間隔物圖案SP可包括作為下部結構之從第一層110突出之第一突出部P1、第二突出部P2、及第三突出部P3。在此情況下，第一突出部P1與第二突出部P2之間的第一距離d1及第二突出部P2與第三突出部P3之間的第二距離d2之差值可小於5埃。
如上文所述，由於雙重圖案化技術（double patterning technology，DPT）間隔物圖案係藉由在形成具有足以使與第一圖案化結構120之反應性最小化之厚度的第一薄膜130之後，將第一薄膜130改變成第二薄膜135來形成，其有可能防止其中雙重圖案化技術製程之硬遮罩受損的問題。結果，由殘餘間隔物形成之遮罩可具有均勻的內部空間臨界尺寸（critical dimension，CD）及外部空間臨界尺寸，且特徵可對準使得成品之良率可獲得改善並可達成產品的良好特性。
第7圖至第10圖係繪示根據實施例之基板處理方法的視圖。根據實施例之基板處理方法可以是根據上述實施例之基板處理方法的變體。在下文中，本文中將不再提供實施例之重複描述。
第1圖至第6圖繪示使用具有雙重結構（亦即，第二薄膜135（第6圖）及第三薄膜140（第6圖））之薄膜形成間隔物圖案SP之製程，而第7圖至第10圖所示之實施例繪示使用具有單層結構（亦即，第二薄膜135）之薄膜形成間隔物圖案SP'之製程。
參照第7圖，具有特定厚度之第一薄膜130係形成在第一層110之暴露表面及作為第二層之第一圖案化結構120上。在此情況下，第一薄膜130可形成為具有形成間隔物圖案所需的厚度。
參照第8圖，藉由改變具有特定厚度之第一薄膜130的化學組成來形成第二薄膜135。為此目的，可供應第三反應物，且如上文所述，藉由形成具有等於或大於特定值之厚度的第一薄膜130，可最小化第三反應材料與下伏的第一圖案化結構120之間的反應。此外，在形成第一薄膜130之製程中，藉由在第一薄膜130與第一圖案化結構120之間形成具有化學鍵（例如Si-O鍵）的層（例如氧化矽層），可防止由於供應第三反應物而使下伏第一圖案化結構120受損。
其後，如第9圖所示，移除第二薄膜135的至少一部分，以形成用於第一圖案化結構120之間隔物圖案SP'。同樣地，如第10圖所示，移除第一圖案化結構120，以將間隔物圖案SP'用作遮罩。此單層結構之間隔物遮罩與上述實施例之雙層結構的間隔物遮罩有所區別，但在兩情況下，應注意共同之處在於，第一薄膜130係由具有充足厚度之弱鍵的混合物形成，且第一薄膜130係轉化成第二薄膜135，以形成間隔物遮罩之至少一部分。
第11圖係繪示當在圖案化製程中藉由在圖案化結構上供應氧自由基而沉積SiO2膜時，由於氧自由基及相關聯問題而使SiO2膜下方之旋塗式硬遮罩膜受損的視圖。
在第11圖中，在欲形成圖案之基板上，作為在圖案化結構（諸如旋塗式硬遮罩膜）上用於圖案形成之遮罩膜，SiO2膜係藉由電漿增強原子層沉積（PEALD）方法均勻地沉積在旋塗式硬遮罩膜上。隨後，藉由選擇性蝕刻製程，移除圖案化結構並餘留遮罩膜，且當蝕刻製程在其後繼續時，圖案化結構最終係留在基板上。
在一理想情況下，遮罩膜之間的間距（亦即，臨界尺寸）係相同的（A=B=C）。然而，實際上，如第11圖所示，旋塗式硬遮罩膜在沉積SiO2膜的初始階段與氧自由基（其係反應氣體）起反應，從而喪失原始形狀，且遮罩膜之間的間距（亦即，臨界尺寸）不同（A#B#C），其導致半導體裝置缺陷。
因此，本揭露案提供一種在圖案化結構上使用活性自由基沉積薄膜時能夠使下部層之損耗或變形最小化之方法。第12圖例示性地顯示此一基板處理方法。第12圖之操作可描述如下。
操作101：將在其上形成圖案化結構之基板安裝在反應器上。圖案化結構可以是用於在基板上形成圖案之遮罩膜（mask film）。例如，遮罩膜之材料可以是旋塗式硬遮罩或用於形成遮罩膜之聚合材料。
操作201：在圖案化結構上供應第一反應物及第二反應物以形成第一膜。第二反應物可以是針對第一反應物及圖案化結構不起反應的材料。在一實施例中，第二反應物可以是藉由施加至反應空間之高頻功率活化的惰性氣體（例如Ar自由基）。第一反應物係包括薄膜成分材料之材料，且可以是液體材料，並可藉由載體氣體以蒸氣狀態供應至基板。在一實施例中，第一反應物可以是含有Si元素之源材料。在接連供應第一反應物及第二反應物的同時可形成第一薄膜，且此製程係重複若干次。在第二操作中，由於第二反應物與第一反應物不具有化學反應性，欲沉積之第一薄膜可包括藉由施加高頻功率而解離之第一反應物（諸如源材料之成分材料），且同時係藉由第二反應物而在基板上緻密化。例如，當第一反應材料係含有碳、氮、及氫成分之Si源材料時，第一薄膜可包括成分元素之間的鍵結結構在其中破壞Si源分子片段，及/或第一反應材料可包括個別的Si、碳、氮、氫元素、對應元素之隨機混合物、或具有弱於化學鍵之物理鍵的弱鍵之混合物。
操作301：在第二操作（步驟2）中形成之第一薄膜上供應第三反應物。第三反應物係與第一反應物具有化學反應性之材料，並可以是例如含氧之活化氣體。
操作401：藉由在第二操作（步驟2）中形成於基板上之第一薄膜與在第三操作（步驟3）中所供應的第三反應物之間的化學反應，來使第一薄膜轉化成第二薄膜。在一實施例中，轉化可以是使第一薄膜氧化之製程。例如，當第一薄膜係含有Si元素之混合物且第三反應物係氧自由基時，第二薄膜可以是SiO2。在第四操作中，在第一薄膜與第三反應物之間的反應中所生成之副產物係移除及排出反應器。
操作501：在第二薄膜上形成第三薄膜。第三薄膜可具有與第二薄膜相同的膜品質，且例如，第三薄膜可以是SiO2薄膜。可藉由交替且接連地供應第一反應物及第三反應物來形成第三薄膜。在一實施例中，第三薄膜可以是由電漿增強原子層沉積方法形成之SiO2膜。
第13圖係繪示根據實施例之基板處理方法的視圖。根據實施例之基板處理方法可以是根據上述實施例之基板處理方法的變體。在下文中，本文中將不再提供實施例之重複描述。
參照第13圖，使用第一反應物、第二反應物、及第三反應物處理基板。在下文中，將在第一反應物含有Si源材料（例如前驅物）、第二反應物含有Ar、及第三反應物含有氧（O2）的前提下進行描述。
步驟1：執行保護層形成步驟。在步驟1中，於交替地供應Si源材料及Ar氣的同時，第一薄膜係形成在旋塗式硬遮罩圖案化結構上。當供應Ar氣時，高頻功率係供應至反應空間，以解離Si源氣體及Ar氣。由於Si源材料及Ar電漿不起化學反應，第一薄膜包括藉由施加高頻功率而解離的Si源材料。當Si源材料係由氮及烷基（CnH2n+1）組成之胺基矽烷（aminosilane）氣體（例如二異丙基胺基矽烷（diisopropylaminosilane，DIPAS））時，Si源材料可以是成分元素之間的鍵結結構在其中破壞之Si源分子片段、個別的Si、碳、氮、及氫元素、或對應元素之混合物。Si源材料可以是由弱於化學鍵之物理鍵組成之弱鍵的混合物。然而，吸附在圖案化結構上之Si源材料的最外層可與下部圖案化結構之表面上的H封端位點起反應，以形成-Si-O-化學鍵。
在步驟1中，由於Ar自由基之離子轟擊效應，第一薄膜在旋塗式硬遮罩圖案化結構上可更加緻密化。藉由活化有別於氧氣的Ar氣，以在旋塗式硬遮罩圖案化結構上形成第一薄膜，其具有防止下伏旋塗式硬遮罩圖案化結構變形的技術效果。
重複步驟1若干次（m次）以形成具有特定厚度之第一薄膜。第一薄膜的厚度必須具有的厚度範圍可在氧自由基穿透第一薄膜時，不使旋塗式硬遮罩結構變形的情況下，轉化成具有SiO2成分的第二薄膜，且其詳細描述稍後將在下文中描述。
步驟2：在步驟1之後，執行氧處理（oxygen treatment）及氧化步驟。在步驟2中，在供應氧氣的同時，第一薄膜係轉化成第二薄膜（也就是SiO2膜）。當供應作為第三反應物之氧氣時，高頻功率係施加至反應空間以形成氧自由基，且氧自由基與第一薄膜中之Si鍵結分子片段起化學反應以形成SiO2薄膜。例如，含有Si元素的分子片段（諸如Si-N-、Si-C-、Si-H-、及Si-CnH2n+1）及氧自由基彼此可起化學反應以形成SiO2膜。作為化學反應之副產物之一實例，可有各種副產物組合（諸如CH4、C2H5、N(C2H5)2、CO2、NO、H2O、H2等），其等係藉由Ar吹掃氣體吹掃並從反應空間移除。因此，步驟2具有將第一薄膜轉化成SiO2膜，同時最小化氧自由基由於第一薄膜的特定厚度，而使旋塗式硬遮罩下部膜變形的技術效應。
步驟3：在步驟2之後的SiO2膜形成。在步驟3中，第三薄膜係化學沉積在第二薄膜上。在步驟3中，於交替且接連地供應為第一反應物之Si源材料及為第三反應物之氧自由基的同時，SiO2之第三薄膜係化學沉積在第二薄膜上。較佳地，第二薄膜及第三薄膜具有相同的膜品質，並可防止諸如在後續熱處理製程中可發生之第二薄膜及第三薄膜的剝離之問題。
下文的表1顯示實驗條件的一實例，在此等條件下執行上述之第12圖的實施例。
表1
| 項目 | 條件 | ||
| 製程溫度（°C） | 室溫至550 °C（較佳地50 °C至300 °C） | ||
| 製程壓力（Torr） | 1.0 Torr至5.0 Torr（較佳地2.0 Torr至3.0 Torr） | ||
| Si前驅物 | DIPAS（二異丙基胺基矽烷） | ||
| 反應物 | O2 | ||
| 吹掃氣體 | Ar | ||
| 第一步驟（保護膜形成步驟） | |||
| 製程時間（秒） | 源供應（S1） | 0.05秒至2.0秒（較佳地0.1秒至1.0秒） | |
| 源吹掃（S2） | 0.05秒至2.0秒（較佳地0.1秒至1.0秒） | ||
| 電漿施加（S3） | 0.05秒至2.0秒（較佳地0.1秒至1.0秒） | ||
| 吹掃（S4） | 0.05秒至2.0秒（較佳地0.1秒至1.0秒） | ||
| 重複S1循環至S4循環 | 50次至200次（較佳地100次至150次） | ||
| 氣體流量率（sccm） | 源載體（Ar） | 100 sccm至10,000 sccm（較佳地600 sccm至1,200 sccm） | |
| 吹掃氣體（Ar） | 1,000 sccm至10,000 sccm（較佳地3,000 sccm至6,000 sccm） | ||
| 電漿條件 | RF功率（W） | 100 W至 1,000 W（較佳地200 W至400 W） | |
| RF頻率 | 13 MHz至100 MHz（較佳地27 MHz至60 MHz） | ||
| 第二步驟（氧處理及氧化步驟） | |||
| 製程時間（秒） | 預吹掃（S5） | 0.05秒至5.0秒（較佳地0.5秒至5.0秒） | |
| 電漿施加（S6） | 0.05秒至3.0秒（較佳地0.1秒至2.0秒） | ||
| 吹掃（S7） | 0.05秒至2.0秒（較佳地0.1秒至1.0秒） | ||
| 重複S5循環及S6循環 | 1次至10次（較佳地1次至5次） | ||
| 氣體流量率（sccm） | 反應氣體（O2） | 50 sccm至1000 sccm（較佳地200 sccm至500 sccm） | |
| 吹掃氣體（Ar） | 1,000 sccm至10,000 sccm（較佳地3,000 sccm至6,000 sccm） | ||
| 電漿條件 | RF功率（W） | 100 W至 1,000 W（較佳地200 W至400 W） | |
| RF頻率 | 13 MHz至100 MHz（較佳地27 MHz至60 MHz） | ||
| 第三步驟（SO膜形成步驟） | |||
| 製程時間（秒） | 源供應（S8） | 0.05秒至2.0秒（較佳地0.1秒至1.0秒） | |
| 源吹掃（S9） | 0.05秒至2.0秒（較佳地0.1秒至1.0秒） | ||
| 電漿施加（S10） | 0.05秒至2.0秒（較佳地0.1秒至2.0秒） | ||
| 吹掃（S11） | 0.05秒至2.0秒（較佳地0.1秒至1.0秒） | ||
| 重複S8循環至S11循環 | 1次至10次（較佳地1次至5次） | ||
| 氣體流量率（sccm） | 源載體（Ar） | 100 sccm至10,000 sccm（較佳地600 sccm至1,200 sccm） | |
| 反應氣體（O2） | 50 sccm至1000 sccm（較佳地200 sccm至500 sccm） | ||
| 吹掃氣體（Ar） | 1,000 sccm至10,000 sccm（較佳地3,000 sccm至6,000 sccm） | ||
| 電漿條件 | RF功率（W） | 100 W至 1,000 W（較佳地200 W至400 W） | |
| RF頻率 | 13 MHz至100 MHz（較佳地27 MHz至60 MHz） | ||
第14圖係根據實施例之基板處理方法的流程圖。根據實施例之基板處理方法可以是根據上述實施例之基板處理方法的變體。在下文中，本文中將不再提供實施例之重複描述。
參照第14圖，製備旋塗式硬遮罩圖案化結構1 （14（a）），並供應Si源材料至旋塗式硬遮罩圖案化結構1，以在圖案化結構1上形成第一薄膜2 （14（b））。其後，供應氧自由基，以將第一薄膜2轉化成具有SiO2成分之第二薄膜3（14（c））。其後，具有SiO2成分之第三薄膜4係形成在第二薄膜3上（14（d））。藉由此製程，可最小化旋塗式硬遮罩圖案化結構1之導因於氧自由基的變形或損耗。
第15圖顯示下伏旋塗式硬遮罩膜的損耗程度，取決於根據上述製程所形成之第一薄膜的厚度。參照第15圖，可見到當第一薄膜係至少15埃時，旋塗式硬遮罩膜的損耗程度係減少至5埃或更少，其係容許範圍。因此，在上述實施例中所執行之第一薄膜的形成中，較佳地重複循環使得第一薄膜具有至少15埃之厚度。
在一些實施例中，可不額外形成第三薄膜，且第一薄膜可形成為較厚並接著轉化成第二薄膜。在此情況下，藉由增加用於施加高頻功率的時間或增加功率的量，而使第二反應材料與第一薄膜充分地起化學反應。
應瞭解，本文中所述之實施例應僅視為描述意義而非用於限制目的。各實施例內的特徵或態樣之描述一般應視為可用於其他實施例中之其他類似特徵或態樣。雖然已參照圖式描述一或多個實施例，所屬技術領域中具有通常知識者將瞭解，在不偏離本揭露由下列申請專利範圍所定義的精神及範疇的情況下，可於其中作出各種形式及細節的變化。
1:圖案化結構2:第一薄膜3:第二薄膜4:第三薄膜100:基板101:操作110:第一層120:第一圖案化結構130:第一薄膜135:第二薄膜140:第三薄膜201:操作301:操作401:操作501:操作A:間距B:間距C:間距d1:距離d2:距離P1:第一突出部P2:第二突出部P3:第三突出部SP:間隔物圖案SP':間隔物圖案
本揭露之某些實施例的上述及其他態樣、特徵、及優點將從結合隨附圖式的下列描述而更加明白，其中：第1圖至第6圖係繪示根據實施例製造半導體裝置之方法的剖視圖；第7圖至第10圖係繪示根據實施例之基板處理方法的視圖；第11圖係繪示在圖案化製程中藉由在圖案化結構上供應氧自由基而沉積SiO2膜時，導因於氧自由基及相關聯問題之下伏（underlying）旋塗式硬遮罩膜受損的視圖；第12圖係繪示方法的流程圖，此方法能夠在圖案化結構上使用活性自由基沉積薄膜時最小化下部膜的損耗或變形；第13圖係繪示根據實施例之基板處理方法的視圖；第14圖係根據實施例之基板處理方法的流程圖；以及第15圖係針對第一薄膜之各厚度繪示下伏旋塗式硬遮罩膜之損耗程度的圖。
100:基板
110:第一層
135:第二薄膜
140:第三薄膜
d1:距離
d2:距離
P1:第一突出部
P2:第二突出部
P3:第三突出部
SP:間隔物圖案
Claims (20)
- 一種基板處理方法，包括：藉由執行一第一循環複數次來形成具有一特定厚度的一第一薄膜，該第一循環包括將一第一反應物供應至一結構上及吹掃一殘餘物複數次；以及藉由改變具有該特定厚度之該第一薄膜的一化學組成來形成一第二薄膜。
- 如請求項1之基板處理方法，其中該第一反應物包括一含矽源氣體。
- 如請求項1之基板處理方法，其中一電漿係在該第一循環之至少一部分期間施加，且該第一反應物係藉由該電漿解離，以吸附該結構上之該第一薄膜。
- 如請求項3之基板處理方法，其中在該第一循環期間供應不與該結構起反應之一第二反應物，且藉由該第二反應物來緻密化該第一薄膜。
- 如請求項1之基板處理方法，其中在形成該第二薄膜之該步驟期間，執行一第二循環複數次，其中該第二循環包括：在具有該特定厚度之該第一薄膜上供應一第三反應物；施加一電漿以誘發該第一薄膜與該第三反應物之間的一反應；以及吹掃一殘餘物。
- 如請求項5之基板處理方法，其中該第三反應物包括氧，且在該反應的誘發期間使該第一薄膜氧化。
- 如請求項5之基板處理方法，其中該第三反應物係與該結構起反應。
- 如請求項7之基板處理方法，其中該第一薄膜具有大於或等於一特定厚度的一厚度，該厚度允許在該第三反應物與該第一薄膜起反應的同時所發生的該結構之一損耗小於一特定值。
- 如請求項7之基板處理方法，其中該特定厚度係至少15埃。
- 如請求項5之基板處理方法，其中在該第二循環期間所吹掃的該殘餘物包括CH4、C2H5、N(C2H5)2、CO2、NO、H2O、及H2中之至少一者。
- 如請求項1之基板處理方法，其中該第一薄膜包括構成該第一反應物之元素的一混合物，且該第一薄膜係藉由使該混合物吸附在該結構上而形成。
- 如請求項11之基板處理方法，其中該第一薄膜包括一化學鍵，係藉由該混合物之一元素與構成該結構之元素中的至少一者起反應而形成。
- 如請求項1之基板處理方法，更包括：移除該第二薄膜之至少一部分，以形成用於該結構之一間隔物圖案；移除該結構；以及使用該間隔物圖案作為一遮罩，來圖案化一下部結構。
- 如請求項13之基板處理方法，其中該間隔物圖案包括從該下部結構突出之一第一突出部、一第二突出部、及一第三突出部，且該第一突出部與該第二突出部之間的一第一距離、及該第二突出部與該第三突出部之間的一第二距離之一差值係小於5埃。
- 如請求項1之基板處理方法，更包括在該第二薄膜上形成具有與該第二薄膜相同成分的一第三薄膜。
- 如請求項15之基板處理方法，更包括：藉由在該第二薄膜及該第三薄膜上執行回蝕，來使該結構暴露；移除該結構；以及使用該第二薄膜及該第三薄膜之剩餘部分作為一遮罩來圖案化一下部結構。
- 如請求項15之基板處理方法，其中在該形成該第三薄膜期間執行一第三循環複數次，其中該第三循環包括：在該第二薄膜上供應該第一反應物；吹掃該第一反應物之一殘餘物；在一電漿大氣下供應該第三反應物；以及吹掃該第三反應物之一殘餘物。
- 一種基板處理方法，包括：藉由在具有一圖案化結構之一基板上供應一第一反應物及一第二反應物來形成一第一薄膜；供應一第三反應物；以及將該第一薄膜轉化成一第二薄膜。
- 如請求項18之基板處理方法，更包括藉由供應該第一反應物及該第三反應物，而在該第二薄膜上形成一第三薄膜。
- 一種基板處理方法，包括：藉由執行一第一循環複數次來形成吸附在一圖案化旋塗式硬遮罩結構上之具有一特定厚度的一第一薄膜，該第一循環包括在該圖案化旋塗式硬遮罩結構上供應一含矽源氣體及吹掃該殘餘物；藉由執行一第二循環複數次來改變該第一薄膜之一化學組成而形成一第二薄膜，該第二循環包括供應與該圖案化旋塗式硬遮罩結構起反應並與該含矽源氣體起反應之一反應氣體、及吹掃一殘餘物；以及藉由執行一第三循環複數次而在該第二薄膜上形成具有與該第二薄膜相同成分之一第三薄膜，該第三循環包括供應該含矽源氣體及供應該反應氣體。
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Family Cites Families (5029)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3089507A (en) | 1963-05-14 | Air eject system control valve | ||
| FR686869A (fr) | 1930-12-31 | 1930-07-31 | Jacob Ets | Robinet mélangeur |
| GB400010A (en) | 1931-10-05 | 1933-10-19 | Johann Puppe | Improvements in and connected with ingot moulds |
| US2059480A (en) | 1933-09-20 | 1936-11-03 | John A Obermaier | Thermocouple |
| US2161626A (en) | 1937-09-25 | 1939-06-06 | Walworth Patents Inc | Locking device |
| US2240163A (en) | 1938-09-30 | 1941-04-29 | Permutit Co | Valve apparatus for controlling hydraulic or pneumatic machines |
| US2266416A (en) | 1939-01-14 | 1941-12-16 | Western Electric Co | Control apparatus |
| US2280778A (en) | 1939-09-29 | 1942-04-28 | John C Andersen | Garden tool |
| US2410420A (en) | 1944-01-01 | 1946-11-05 | Robert B Bennett | Scraper |
| US2441253A (en) | 1944-10-30 | 1948-05-11 | Rohim Mfg Company Inc | Valve |
| US2563931A (en) | 1946-04-02 | 1951-08-14 | Honeywell Regulator Co | Rate responsive thermocouple |
| US2480557A (en) | 1946-08-02 | 1949-08-30 | Harry S Cummins | Detachable thermocouple housing |
| US2660061A (en) | 1949-03-05 | 1953-11-24 | Dominion Eng Works Ltd | Immersion type thermocouple temperature measuring device |
| US2745640A (en) | 1953-09-24 | 1956-05-15 | American Viscose Corp | Heat exchanging apparatus |
| GB752277A (en) | 1953-10-28 | 1956-07-11 | Canadian Ind 1954 Ltd | Improved thermocouple unit |
| US2847320A (en) | 1956-05-08 | 1958-08-12 | Ohio Commw Eng Co | Method for gas plating with aluminum organo compounds |
| US3094396A (en) | 1959-07-07 | 1963-06-18 | Continental Can Co | Method of and apparatus for curing internal coatings on can bodies |
| US2990045A (en) | 1959-09-18 | 1961-06-27 | Lipe Rollway Corp | Thermally responsive transmission for automobile fan |
| US6482262B1 (en) | 1959-10-10 | 2002-11-19 | Asm Microchemistry Oy | Deposition of transition metal carbides |
| US3038951A (en) | 1961-01-19 | 1962-06-12 | Leeds & Northrup Co | Fast acting totally expendable immersion thermocouple |
| US3197682A (en) | 1961-04-13 | 1965-07-27 | Pure Oil Co | Safet electro-responsive-fluid chuck |
| US3232437A (en) | 1963-03-13 | 1966-02-01 | Champlon Lab Inc | Spin-on filter cartridge |
| US3410349A (en) | 1964-01-02 | 1968-11-12 | Ted R. Troutman | Tubing scraper and method |
| US3263502A (en) | 1964-01-21 | 1966-08-02 | Redwood L Springfield | Multiple thermocouple support |
| FR1408266A (fr) | 1964-06-30 | 1965-08-13 | Realisations Electr Et Electro | Prise de raccordement pour thermocouples |
| DE1255646B (de) | 1965-02-27 | 1967-12-07 | Hoechst Ag | Verfahren zur Gewinnung von Fluor in Form von Calciumsilicofluorid aus salpeter- oder salzsauren Rohphosphataufschluessen |
| US3332286A (en) | 1965-09-02 | 1967-07-25 | Gen Electric | Thermocouple pressure gauge |
| NL6706680A (zh) | 1966-06-02 | 1967-12-04 | ||
| US3588192A (en) | 1969-06-02 | 1971-06-28 | Trw Inc | Hydraulic skid control system |
| US3647387A (en) | 1970-03-19 | 1972-03-07 | Stanford Research Inst | Detection device |
| US3647716A (en) | 1970-04-03 | 1972-03-07 | Westvaco Corp | Transport reactor with a venturi tube connection to a combustion chamber for producing activated carbon |
| US3634740A (en) | 1970-04-20 | 1972-01-11 | Addressograph Multigraph | Electrostatic holddown |
| US4393013A (en) | 1970-05-20 | 1983-07-12 | J. C. Schumacher Company | Vapor mass flow control system |
| US3713899A (en) | 1970-11-12 | 1973-01-30 | Ford Motor Co | Thermocouple probe |
| US3885504A (en) | 1971-01-09 | 1975-05-27 | Max Baermann | Magnetic stabilizing or suspension system |
| US3718429A (en) | 1971-03-15 | 1973-02-27 | Du Pont | No-no2 analyzer |
| GB1337173A (en) | 1971-05-17 | 1973-11-14 | Tecalemit Engineering | Fluid flow control |
| CA1002299A (en) | 1971-06-24 | 1976-12-28 | William H. Trembley | Installation tool |
| US3833492A (en) | 1971-09-22 | 1974-09-03 | Pollution Control Ind Inc | Method of producing ozone |
| US3796182A (en) | 1971-12-16 | 1974-03-12 | Applied Materials Tech | Susceptor structure for chemical vapor deposition reactor |
| US3862397A (en) | 1972-03-24 | 1975-01-21 | Applied Materials Tech | Cool wall radiantly heated reactor |
| FR2181175A5 (zh) | 1972-04-20 | 1973-11-30 | Commissariat Energie Atomique | |
| JPS5132766B2 (zh) | 1972-07-25 | 1976-09-14 | ||
| JPS5539903B2 (zh) | 1972-10-19 | 1980-10-14 | ||
| DE7242602U (zh) | 1972-11-20 | 1976-04-29 | Hoogovens Ijmuiden B.V., Ijmuiden (Niederlande) | |
| DE2427992A1 (de) | 1973-06-13 | 1975-03-13 | Thermal Syndicate Ltd | Verfahren zum messen hoher temperaturen mit thermoelementen |
| US3854443A (en) | 1973-12-19 | 1974-12-17 | Intel Corp | Gas reactor for depositing thin films |
| DE2407133B2 (de) | 1974-02-15 | 1976-12-09 | Deutsche Forschungs- und Versuchsanstalt für Luft- und Raumfahrt e.V., 5300 Bonn | Verfahren und vorrichtung zur bestimmung von stickoxid |
| US3904371A (en) | 1974-03-04 | 1975-09-09 | Beckman Instruments Inc | Chemiluminescent ammonia detection |
| US3916270A (en) | 1974-05-02 | 1975-10-28 | Tektronix Inc | Electrostatic holddown apparatus |
| SU494614A1 (ru) | 1974-05-05 | 1975-12-05 | Специальное Проектно-Конструкторское Бюро "Главнефтеснабсбыта" Усср | Устройство дистанционного измерени уровн жидкости |
| US3997638A (en) | 1974-09-18 | 1976-12-14 | Celanese Corporation | Production of metal ion containing carbon fibers useful in electron shielding applications |
| US3887790A (en) | 1974-10-07 | 1975-06-03 | Vernon H Ferguson | Wrap-around electric resistance heater |
| US3962004A (en) | 1974-11-29 | 1976-06-08 | Rca Corporation | Pattern definition in an organic layer |
| SE393967B (sv) | 1974-11-29 | 1977-05-31 | Sateko Oy | Forfarande och for utforande av stroleggning mellan lagren i ett virkespaket |
| JPS589954B2 (ja) | 1975-02-28 | 1983-02-23 | 松下電器産業株式会社 | リズムハツセイソウチ |
| US3983401A (en) | 1975-03-13 | 1976-09-28 | Electron Beam Microfabrication Corporation | Method and apparatus for target support in electron projection systems |
| GB1514921A (en) | 1975-04-02 | 1978-06-21 | Kanji S | Record-playing apparatus |
| US4054071A (en) | 1975-06-17 | 1977-10-18 | Aetna-Standard Engineering Company | Flying saw with movable work shifter |
| US4079944A (en) | 1975-12-05 | 1978-03-21 | Durley Iii Benton A | Cueing device for phonographs |
| DE2610556C2 (de) | 1976-03-12 | 1978-02-02 | Siemens AG, 1000 Berlin und 8000 München | Vorrichtung zum Verteilen strömender Medien über einen Strömungsquerschnitt |
| US4048110A (en) | 1976-05-12 | 1977-09-13 | Celanese Corporation | Rhenium catalyst composition |
| PL114843B1 (en) | 1976-08-13 | 1981-02-28 | Gewerk Eisenhuette Westfalia | Coupling member for segments of trough-shaped running track of a chain driven scraper coveyor |
| USD249341S (en) | 1976-11-11 | 1978-09-12 | Umc Industries, Inc. | Electro-mechanical pulser |
| US4194536A (en) | 1976-12-09 | 1980-03-25 | Eaton Corporation | Composite tubing product |
| US4181330A (en) | 1977-03-22 | 1980-01-01 | Noriatsu Kojima | Horn shaped multi-inlet pipe fitting |
| US4099041A (en) | 1977-04-11 | 1978-07-04 | Rca Corporation | Susceptor for heating semiconductor substrates |
| US4164959A (en) | 1977-04-15 | 1979-08-21 | The Salk Institute For Biological Studies | Metering valve |
| US4179530A (en) | 1977-05-20 | 1979-12-18 | Wacker-Chemitronic Gesellschaft Fur Elektronik-Grundstoffe Mbh | Process for the deposition of pure semiconductor material |
| US4176630A (en) | 1977-06-01 | 1979-12-04 | Dynair Limited | Automatic control valves |
| US4126027A (en) | 1977-06-03 | 1978-11-21 | Westinghouse Electric Corp. | Method and apparatus for eccentricity correction in a rolling mill |
| US4149237A (en) | 1977-09-16 | 1979-04-10 | The Foxboro Company | Industrial process control system |
| US4152760A (en) | 1977-09-16 | 1979-05-01 | The Foxboro Company | Industrial process control system |
| US4145699A (en) | 1977-12-07 | 1979-03-20 | Bell Telephone Laboratories, Incorporated | Superconducting junctions utilizing a binary semiconductor barrier |
| US4184188A (en) | 1978-01-16 | 1980-01-15 | Veeco Instruments Inc. | Substrate clamping technique in IC fabrication processes |
| US4217463A (en) | 1978-03-13 | 1980-08-12 | National Distillers And Chemical Corporation | Fast responsive, high pressure thermocouple |
| US4241000A (en) | 1978-08-24 | 1980-12-23 | The United States Of America As Represented By The Secretary Of The Army | Process for producing polycrystalline cubic aluminum oxynitride |
| US4229064A (en) | 1978-10-25 | 1980-10-21 | Trw Inc. | Polarizing adapter sleeves for electrical connectors |
| US4314763A (en) | 1979-01-04 | 1982-02-09 | Rca Corporation | Defect detection system |
| FI57975C (fi) | 1979-02-28 | 1980-11-10 | Lohja Ab Oy | Foerfarande och anordning vid uppbyggande av tunna foereningshinnor |
| GB2051875A (en) | 1979-05-29 | 1981-01-21 | Standard Telephones Cables Ltd | Preparing metal coatings |
| US4234449A (en) | 1979-05-30 | 1980-11-18 | The United States Of America As Represented By The United States Department Of Energy | Method of handling radioactive alkali metal waste |
| JPS5651045A (en) | 1979-09-29 | 1981-05-08 | Toshiba Corp | Detector for part between data of record player |
| US4389973A (en) | 1980-03-18 | 1983-06-28 | Oy Lohja Ab | Apparatus for performing growth of compound thin films |
| US4324611A (en) | 1980-06-26 | 1982-04-13 | Branson International Plasma Corporation | Process and gas mixture for etching silicon dioxide and silicon nitride |
| DE3030697A1 (de) | 1980-08-14 | 1982-03-18 | Hochtemperatur-Reaktorbau GmbH, 5000 Köln | Gasgekuehlter kernreaktor |
| US4322592A (en) | 1980-08-22 | 1982-03-30 | Rca Corporation | Susceptor for heating semiconductor substrates |
| US4355912A (en) | 1980-09-12 | 1982-10-26 | Haak Raymond L | Spring loaded sensor fitting |
| US4479831A (en) | 1980-09-15 | 1984-10-30 | Burroughs Corporation | Method of making low resistance polysilicon gate transistors and low resistance interconnections therefor via gas deposited in-situ doped amorphous layer and heat-treatment |
| US4384918A (en) | 1980-09-30 | 1983-05-24 | Fujitsu Limited | Method and apparatus for dry etching and electrostatic chucking device used therein |
| GB2092908A (en) | 1981-02-18 | 1982-08-25 | Nat Res Dev | Method and apparatus for delivering a controlled flow rate of reactant to a vapour deposition process |
| US4333735A (en) | 1981-03-16 | 1982-06-08 | Exxon Research & Engineering Co. | Process and apparatus for measuring gaseous fixed nitrogen species |
| US4466766A (en) | 1981-05-20 | 1984-08-21 | Ruska Instrument Corporation | Transfer apparatus |
| NO150532C (no) | 1981-05-22 | 1984-10-31 | Bjoern R Hope | Anordning ved nivaamaaler. |
| US4488506A (en) | 1981-06-18 | 1984-12-18 | Itt Industries, Inc. | Metallization plant |
| USD269850S (en) | 1981-07-22 | 1983-07-26 | Drag Specialties, Inc. | Handlebar grip |
| JPS5819462A (ja) | 1981-07-24 | 1983-02-04 | Kawasaki Steel Corp | 電縫溶接鋼管 |
| US4436674A (en) | 1981-07-30 | 1984-03-13 | J.C. Schumacher Co. | Vapor mass flow control system |
| NL8103979A (nl) | 1981-08-26 | 1983-03-16 | Bok Edward | Methode en inrichting voor het aanbrengen van een film vloeibaar medium op een substraat. |
| US4720362A (en) | 1981-08-31 | 1988-01-19 | Raytheon Company | Transparent aluminum oxynitride and method of manufacture |
| US4520116A (en) | 1981-08-31 | 1985-05-28 | Raytheon Company | Transparent aluminum oxynitride and method of manufacture |
| US4481300A (en) | 1981-08-31 | 1984-11-06 | Raytheon Company | Aluminum oxynitride having improved optical characteristics and method of manufacture |
| GB2106325A (en) | 1981-09-14 | 1983-04-07 | Philips Electronic Associated | Electrostatic chuck |
| FR2517790A1 (fr) | 1981-12-07 | 1983-06-10 | British Nuclear Fuels Ltd | Valve a levee equipee d'un soufflet entre l'obturateur et le corps, notamment pour fluides radioactifs ou toxiques |
| US4412133A (en) | 1982-01-05 | 1983-10-25 | The Perkin-Elmer Corp. | Electrostatic cassette |
| US4414492A (en) | 1982-02-02 | 1983-11-08 | Intent Patent A.G. | Electronic ballast system |
| JPS6059104B2 (ja) | 1982-02-03 | 1985-12-23 | 株式会社東芝 | 静電チヤツク板 |
| NL8200753A (nl) | 1982-02-24 | 1983-09-16 | Integrated Automation | Methode en inrichting voor het aanbrengen van een coating op een substraat of tape. |
| US4484061A (en) | 1982-05-13 | 1984-11-20 | Sys-Tec, Inc. | Temperature control system for liquid chromatographic columns employing a thin film heater/sensor |
| US4465716A (en) | 1982-06-02 | 1984-08-14 | Texas Instruments Incorporated | Selective deposition of composite materials |
| FR2529714A1 (fr) | 1982-07-01 | 1984-01-06 | Commissariat Energie Atomique | Procede de realisation de l'oxyde de champ d'un circuit integre |
| US4401507A (en) | 1982-07-14 | 1983-08-30 | Advanced Semiconductor Materials/Am. | Method and apparatus for achieving spatially uniform externally excited non-thermal chemical reactions |
| JPS5929435A (ja) | 1982-08-11 | 1984-02-16 | Hitachi Ltd | 試料支持装置 |
| NL8203318A (nl) | 1982-08-24 | 1984-03-16 | Integrated Automation | Inrichting voor processing van substraten. |
| US4454370A (en) | 1982-09-07 | 1984-06-12 | Wahl Instruments, Inc. | Thermocouple surface probe |
| FR2532783A1 (fr) | 1982-09-07 | 1984-03-09 | Vu Duy Phach | Machine de traitement thermique pour semiconducteurs |
| US4444990A (en) | 1982-09-08 | 1984-04-24 | Servo Corporation Of America | Heat sensing device |
| US5242501A (en) | 1982-09-10 | 1993-09-07 | Lam Research Corporation | Susceptor in chemical vapor deposition reactors |
| JPS5945900U (ja) | 1982-09-17 | 1984-03-27 | 住友電気工業株式会社 | 高周波誘導プラズマ用ト−チ |
| US4512113A (en) | 1982-09-23 | 1985-04-23 | Budinger William D | Workpiece holder for polishing operation |
| US4499354A (en) | 1982-10-06 | 1985-02-12 | General Instrument Corp. | Susceptor for radiant absorption heater system |
| JPS5979545A (ja) | 1982-10-29 | 1984-05-08 | Toshiba Corp | 静電チャック装置 |
| JPS59127847A (ja) | 1983-01-13 | 1984-07-23 | Tokuda Seisakusho Ltd | スパツタリング装置の静電チヤツク装置 |
| JPS60110133A (ja) | 1983-01-24 | 1985-06-15 | Toshiba Corp | 静電チャックにおける異状確認装置 |
| US4622918A (en) | 1983-01-31 | 1986-11-18 | Integrated Automation Limited | Module for high vacuum processing |
| US4570328A (en) | 1983-03-07 | 1986-02-18 | Motorola, Inc. | Method of producing titanium nitride MOS device gate electrode |
| JPS59211779A (ja) | 1983-05-14 | 1984-11-30 | Toshiba Corp | 圧縮機 |
| US4537001A (en) | 1983-05-23 | 1985-08-27 | Uppstroem Leif R | Building elements |
| US4548688A (en) | 1983-05-23 | 1985-10-22 | Fusion Semiconductor Systems | Hardening of photoresist |
| USD274122S (en) | 1983-06-20 | 1984-06-05 | Drag Specialties, Inc. | Motorcycle handlebar grip |
| US4551192A (en) | 1983-06-30 | 1985-11-05 | International Business Machines Corporation | Electrostatic or vacuum pinchuck formed with microcircuit lithography |
| US4496828A (en) | 1983-07-08 | 1985-01-29 | Ultra Carbon Corporation | Susceptor assembly |
| JPS6050923A (ja) | 1983-08-31 | 1985-03-22 | Hitachi Ltd | プラズマ表面処理方法 |
| GB2154365A (en) | 1984-02-10 | 1985-09-04 | Philips Electronic Associated | Loading semiconductor wafers on an electrostatic chuck |
| JPS6074626A (ja) | 1983-09-30 | 1985-04-26 | Fujitsu Ltd | ウエハー処理方法及び装置 |
| US4579080A (en) | 1983-12-09 | 1986-04-01 | Applied Materials, Inc. | Induction heated reactor system for chemical vapor deposition |
| US4655592A (en) | 1983-12-30 | 1987-04-07 | Hamamatsu Systems, Inc. | Particle detection method and apparatus |
| US6784033B1 (en) | 1984-02-15 | 2004-08-31 | Semiconductor Energy Laboratory Co., Ltd. | Method for the manufacture of an insulated gate field effect semiconductor device |
| USD288556S (en) | 1984-02-21 | 1987-03-03 | Pace, Incorporated | Ornamental design for a frame of circuit elements utilized to replace damaged elements on printed circuit boards |
| US4735259A (en) | 1984-02-21 | 1988-04-05 | Hewlett-Packard Company | Heated transfer line for capillary tubing |
| US5259881A (en) | 1991-05-17 | 1993-11-09 | Materials Research Corporation | Wafer processing cluster tool batch preheating and degassing apparatus |
| US4527005A (en) | 1984-03-13 | 1985-07-02 | The United States Of America As Represented By The United States Department Of Energy | Spring loaded thermocouple module |
| US4512841A (en) | 1984-04-02 | 1985-04-23 | International Business Machines Corporation | RF Coupling techniques |
| US4724272A (en) | 1984-04-17 | 1988-02-09 | Rockwell International Corporation | Method of controlling pyrolysis temperature |
| US4575636A (en) | 1984-04-30 | 1986-03-11 | Rca Corporation | Deep ultraviolet (DUV) flood exposure system |
| US4611966A (en) | 1984-05-30 | 1986-09-16 | Johnson Lester R | Apparatus for transferring semiconductor wafers |
| US4590326A (en) | 1984-06-14 | 1986-05-20 | Texaco Inc. | Multi-element thermocouple |
| US4534816A (en) | 1984-06-22 | 1985-08-13 | International Business Machines Corporation | Single wafer plasma etch reactor |
| US4858557A (en) | 1984-07-19 | 1989-08-22 | L.P.E. Spa | Epitaxial reactors |
| JPS6138863A (ja) | 1984-07-30 | 1986-02-24 | Toshiba Corp | 研磨装置 |
| NL8402410A (nl) | 1984-08-01 | 1986-03-03 | Bok Edward | Verbeterde proces installatie met double-floating transport en processing van wafers en tape. |
| US4700089A (en) | 1984-08-23 | 1987-10-13 | Fujitsu Limited | Delay circuit for gate-array LSI |
| US4579378A (en) | 1984-10-31 | 1986-04-01 | Snyders Robert V | Mortar joint pointing guide |
| US6786997B1 (en) | 1984-11-26 | 2004-09-07 | Semiconductor Energy Laboratory Co., Ltd. | Plasma processing apparatus |
| JPH0752718B2 (ja) | 1984-11-26 | 1995-06-05 | 株式会社半導体エネルギー研究所 | 薄膜形成方法 |
| JPH0236276Y2 (zh) | 1985-01-10 | 1990-10-03 | ||
| US4620998A (en) | 1985-02-05 | 1986-11-04 | Haresh Lalvani | Crescent-shaped polygonal tiles |
| US4624728A (en) | 1985-06-11 | 1986-11-25 | Tegal Corporation | Pin lift plasma processing |
| JPS624231U (zh) | 1985-06-22 | 1987-01-12 | ||
| US4653541A (en) | 1985-06-26 | 1987-03-31 | Parker Hannifin Corporation | Dual wall safety tube |
| JPH0626206B2 (ja) | 1985-08-28 | 1994-04-06 | エフエスアイ コ−ポレイシヨン | 基板より気相法で膜除去する方法及び装置 |
| US4789294A (en) | 1985-08-30 | 1988-12-06 | Canon Kabushiki Kaisha | Wafer handling apparatus and method |
| US4776744A (en) | 1985-09-09 | 1988-10-11 | Applied Materials, Inc. | Systems and methods for wafer handling in semiconductor process equipment |
| US4721534A (en) | 1985-09-12 | 1988-01-26 | System Planning Corporation | Immersion pyrometer |
| US6230650B1 (en) | 1985-10-14 | 2001-05-15 | Semiconductor Energy Laboratory Co., Ltd. | Microwave enhanced CVD system under magnetic field |
| US5512102A (en) | 1985-10-14 | 1996-04-30 | Semiconductor Energy Laboratory Co., Ltd. | Microwave enhanced CVD system under magnetic field |
| US4949671A (en) | 1985-10-24 | 1990-08-21 | Texas Instruments Incorporated | Processing apparatus and method |
| US4664769A (en) | 1985-10-28 | 1987-05-12 | International Business Machines Corporation | Photoelectric enhanced plasma glow discharge system and method including radiation means |
| DE3544812A1 (de) | 1985-12-18 | 1987-06-25 | Heraeus Schott Quarzschmelze | Doppelwand-quarzglasrohr fuer die durchfuehrung halbleitertechnologischer prozesse |
| JPH0651909B2 (ja) | 1985-12-28 | 1994-07-06 | キヤノン株式会社 | 薄膜多層構造の形成方法 |
| KR940000915B1 (ko) | 1986-01-31 | 1994-02-04 | 가부시기가이샤 히다찌세이사꾸쇼 | 표면 처리방법 |
| NL8600255A (nl) | 1986-02-03 | 1987-09-01 | Bok Edward | Verbeterde inrichting voor wafer transport en processing. |
| US4654226A (en) | 1986-03-03 | 1987-03-31 | The University Of Delaware | Apparatus and method for photochemical vapor deposition |
| JPS62222625A (ja) | 1986-03-25 | 1987-09-30 | Shimizu Constr Co Ltd | 半導体製造装置 |
| JPS62237236A (ja) | 1986-04-09 | 1987-10-17 | Hitachi Ltd | 恒温清浄作業室 |
| US4764076A (en) | 1986-04-17 | 1988-08-16 | Varian Associates, Inc. | Valve incorporating wafer handling arm |
| US4670126A (en) | 1986-04-28 | 1987-06-02 | Varian Associates, Inc. | Sputter module for modular wafer processing system |
| US4917556A (en) | 1986-04-28 | 1990-04-17 | Varian Associates, Inc. | Modular wafer transport and processing system |
| US4770590A (en) | 1986-05-16 | 1988-09-13 | Silicon Valley Group, Inc. | Method and apparatus for transferring wafers between cassettes and a boat |
| US4722298A (en) | 1986-05-19 | 1988-02-02 | Machine Technology, Inc. | Modular processing apparatus for processing semiconductor wafers |
| US4747367A (en) | 1986-06-12 | 1988-05-31 | Crystal Specialties, Inc. | Method and apparatus for producing a constant flow, constant pressure chemical vapor deposition |
| USD309702S (en) | 1986-06-25 | 1990-08-07 | Don Hall | Safety clamp attachment for a hammer |
| US4718637A (en) | 1986-07-02 | 1988-01-12 | Mdc Vacuum Products Corporation | High vacuum gate valve having improved metal vacuum joint |
| US5183511A (en) | 1986-07-23 | 1993-02-02 | Semiconductor Energy Laboratory Co., Ltd. | Photo CVD apparatus with a glow discharge system |
| US4681134A (en) | 1986-07-23 | 1987-07-21 | Paris Sr Raymond L | Valve lock |
| US4812201A (en) | 1986-07-25 | 1989-03-14 | Tokyo Electron Limited | Method of ashing layers, and apparatus for ashing layers |
| US4749416A (en) | 1986-08-01 | 1988-06-07 | System Planning Corporation | Immersion pyrometer with protective structure for sidewall use |
| US4721533A (en) | 1986-08-01 | 1988-01-26 | System Planning Corporation | Protective structure for an immersion pyrometer |
| DE3626724C2 (de) | 1986-08-07 | 1994-06-16 | Siemens Ag | Anordnung zur Oberflächenprüfung |
| US4882199A (en) | 1986-08-15 | 1989-11-21 | Massachusetts Institute Of Technology | Method of forming a metal coating on a substrate |
| KR910003742B1 (ko) | 1986-09-09 | 1991-06-10 | 세미콘덕터 에너지 라보라터리 캄파니 리미티드 | Cvd장치 |
| US5427824A (en) | 1986-09-09 | 1995-06-27 | Semiconductor Energy Laboratory Co., Ltd. | CVD apparatus |
| US4717461A (en) | 1986-09-15 | 1988-01-05 | Machine Technology, Inc. | System and method for processing workpieces |
| US4938815A (en) | 1986-10-15 | 1990-07-03 | Advantage Production Technology, Inc. | Semiconductor substrate heater and reactor process and apparatus |
| DE3635216A1 (de) | 1986-10-16 | 1988-04-21 | Draegerwerk Ag | Elektrisch ansteuerbares ventil |
| US4725204A (en) | 1986-11-05 | 1988-02-16 | Pennwalt Corporation | Vacuum manifold pumping system |
| US4867629A (en) | 1986-11-20 | 1989-09-19 | Shimizu Construction Co., Ltd. | Dusttight storage cabinet apparatus for use in clean rooms |
| JPS63136532A (ja) | 1986-11-27 | 1988-06-08 | Nec Kyushu Ltd | 半導体基板熱処理装置 |
| US4775281A (en) | 1986-12-02 | 1988-10-04 | Teradyne, Inc. | Apparatus and method for loading and unloading wafers |
| US5882165A (en) | 1986-12-19 | 1999-03-16 | Applied Materials, Inc. | Multiple chamber integrated process system |
| DE3776118D1 (de) | 1986-12-22 | 1992-02-27 | Siemens Ag | Transportbehaelter mit austauschbarem, zweiteiligem innenbehaelter. |
| USD311126S (en) | 1986-12-23 | 1990-10-09 | Joseph Crowley | Shelf extending mounting bracket for additional product display |
| US4753856A (en) | 1987-01-02 | 1988-06-28 | Dow Corning Corporation | Multilayer ceramic coatings from silicate esters and metal oxides |
| SU1408319A1 (ru) | 1987-01-06 | 1988-07-07 | Всесоюзный научно-исследовательский институт аналитического приборостроения | Хемилюминесцентный газоанализатор окислов азота |
| US4802441A (en) | 1987-01-08 | 1989-02-07 | Btu Engineering Corporation | Double wall fast cool-down furnace |
| US4753192A (en) | 1987-01-08 | 1988-06-28 | Btu Engineering Corporation | Movable core fast cool-down furnace |
| FR2610007B1 (fr) | 1987-01-22 | 1990-08-24 | Bmi Fours Ind | Four industriel vertical a ventilation peripherique |
| IT209910Z2 (it) | 1987-02-06 | 1988-11-04 | Sgs Microelettronica Spa | Contenitore porta-wafer o fretta di slicio, utilizzato perl'immagazzinamento e/o spedizione sotto vuoto degli stessi. |
| US4976996A (en) | 1987-02-17 | 1990-12-11 | Lam Research Corporation | Chemical vapor deposition reactor and method of use thereof |
| US4874273A (en) | 1987-03-16 | 1989-10-17 | Hitachi, Ltd. | Apparatus for holding and/or conveying articles by fluid |
| US4863374A (en) | 1987-03-27 | 1989-09-05 | Edward Orton, Jr., Ceramic Foundation | Kiln with ventilation system |
| US4821674A (en) | 1987-03-31 | 1989-04-18 | Deboer Wiebe B | Rotatable substrate supporting mechanism with temperature sensing device for use in chemical vapor deposition equipment |
| US5198034A (en) | 1987-03-31 | 1993-03-30 | Epsilon Technology, Inc. | Rotatable substrate supporting mechanism with temperature sensing device for use in chemical vapor deposition equipment |
| US4790258A (en) | 1987-04-03 | 1988-12-13 | Tegal Corporation | Magnetically coupled wafer lift pins |
| US4812217A (en) | 1987-04-27 | 1989-03-14 | American Telephone And Telegraph Company, At&T Bell Laboratories | Method and apparatus for feeding and coating articles in a controlled atmosphere |
| US4827430A (en) | 1987-05-11 | 1989-05-02 | Baxter International Inc. | Flow measurement system |
| US4780169A (en) | 1987-05-11 | 1988-10-25 | Tegal Corporation | Non-uniform gas inlet for dry etching apparatus |
| US4738618A (en) | 1987-05-14 | 1988-04-19 | Semitherm | Vertical thermal processor |
| US4871523A (en) | 1987-05-15 | 1989-10-03 | Exxon Chemical Patents Inc. | Vanadium tetrachloride stabilization |
| US4808387A (en) | 1987-05-15 | 1989-02-28 | Exxon Chemical Patents Inc. | Stabilization of vanadium tetrachloride |
| US4828224A (en) | 1987-10-15 | 1989-05-09 | Epsilon Technology, Inc. | Chemical vapor deposition system |
| US5221556A (en) | 1987-06-24 | 1993-06-22 | Epsilon Technology, Inc. | Gas injectors for reaction chambers in CVD systems |
| NO161941C (no) | 1987-06-25 | 1991-04-30 | Kvaerner Eng | Fremgangsmaate ved og anlegg for transport av hydrokarboner over lang avstand fra en hydrokarbonkilde til havs. |
| NL8701549A (nl) | 1987-07-01 | 1989-02-01 | Asm International N V Amtc | Plasmareactor van het magnetrontype voor hoge-flux plasma-etsen en plasma-depositie. |
| US4837113A (en) | 1987-07-16 | 1989-06-06 | Texas Instruments Incorporated | Method for depositing compound from group II-VI |
| US5062386A (en) | 1987-07-27 | 1991-11-05 | Epitaxy Systems, Inc. | Induction heated pancake epitaxial reactor |
| USD327534S (en) | 1987-07-30 | 1992-06-30 | CLM Investments, Inc. | Floor drain strainer |
| US4854263B1 (en) | 1987-08-14 | 1997-06-17 | Applied Materials Inc | Inlet manifold and methods for increasing gas dissociation and for PECVD of dielectric films |
| JPH0777211B2 (ja) | 1987-08-19 | 1995-08-16 | 富士通株式会社 | アッシング方法 |
| JPS6455821A (en) | 1987-08-26 | 1989-03-02 | Dainippon Screen Mfg | Rapid cooling type heat treating apparatus |
| US4756794A (en) | 1987-08-31 | 1988-07-12 | The United States Of America As Represented By The Secretary Of The Navy | Atomic layer etching |
| KR970004947B1 (ko) | 1987-09-10 | 1997-04-10 | 도오교오 에레구토론 가부시끼가이샤 | 핸들링장치 |
| US5180435A (en) | 1987-09-24 | 1993-01-19 | Research Triangle Institute, Inc. | Remote plasma enhanced CVD method and apparatus for growing an epitaxial semiconductor layer |
| US4854266A (en) | 1987-11-02 | 1989-08-08 | Btu Engineering Corporation | Cross-flow diffusion furnace |
| US4916091A (en) | 1987-11-05 | 1990-04-10 | Texas Instruments Incorporated | Plasma and plasma UV deposition of SiO2 |
| US4880982A (en) | 1987-11-17 | 1989-11-14 | Impex Production & Development A/S (Ltd.) | Fluid indicator for a containment vessel |
| JPH0648217B2 (ja) | 1987-12-24 | 1994-06-22 | 川惣電機工業株式会社 | 溶融金属の連続測温装置 |
| KR970003885B1 (ko) | 1987-12-25 | 1997-03-22 | 도오교오 에레구토론 가부시끼 가이샤 | 에칭 방법 및 그 장치 |
| US4830515A (en) | 1987-12-28 | 1989-05-16 | Omega Engineering, Inc. | Mounting clip for a thermocouple assembly |
| US5028366A (en) | 1988-01-12 | 1991-07-02 | Air Products And Chemicals, Inc. | Water based mold release compositions for making molded polyurethane foam |
| JPH01185176A (ja) | 1988-01-18 | 1989-07-24 | Fujitsu Ltd | 静電吸着を用いた処理方法 |
| FR2628985B1 (fr) | 1988-03-22 | 1990-12-28 | Labo Electronique Physique | Reacteur d'epitaxie a paroi protegee contre les depots |
| US5069591A (en) | 1988-03-24 | 1991-12-03 | Tel Sagami Limited | Semiconductor wafer-processing apparatus |
| JP2768685B2 (ja) | 1988-03-28 | 1998-06-25 | 株式会社東芝 | 半導体装置の製造方法及びその装置 |
| US4978567A (en) | 1988-03-31 | 1990-12-18 | Materials Technology Corporation, Subsidiary Of The Carbon/Graphite Group, Inc. | Wafer holding fixture for chemical reaction processes in rapid thermal processing equipment and method for making same |
| JP2859632B2 (ja) | 1988-04-14 | 1999-02-17 | キヤノン株式会社 | 成膜装置及び成膜方法 |
| US4857382A (en) | 1988-04-26 | 1989-08-15 | General Electric Company | Apparatus and method for photoetching of polyimides, polycarbonates and polyetherimides |
| US4949848A (en) | 1988-04-29 | 1990-08-21 | Fluoroware, Inc. | Wafer carrier |
| US5174881A (en) | 1988-05-12 | 1992-12-29 | Mitsubishi Denki Kabushiki Kaisha | Apparatus for forming a thin film on surface of semiconductor substrate |
| US5407867A (en) | 1988-05-12 | 1995-04-18 | Mitsubishki Denki Kabushiki Kaisha | Method of forming a thin film on surface of semiconductor substrate |
| JPH01296613A (ja) | 1988-05-25 | 1989-11-30 | Nec Corp | ３−ｖ族化合物半導体の気相成長方法 |
| JPH01307229A (ja) | 1988-06-06 | 1989-12-12 | Canon Inc | 堆積膜形成法 |
| JPH01313954A (ja) | 1988-06-14 | 1989-12-19 | Fujitsu Ltd | 静電チャック |
| KR960012876B1 (ko) | 1988-06-16 | 1996-09-25 | 도오교오 에레구토론 사가미 가부시끼가이샤 | 열처리 장치 |
| US5178682A (en) | 1988-06-21 | 1993-01-12 | Mitsubishi Denki Kabushiki Kaisha | Method for forming a thin layer on a semiconductor substrate and apparatus therefor |
| KR0155545B1 (ko) | 1988-06-27 | 1998-12-01 | 고다까 토시오 | 기판의 열처리 장치 |
| US5064337A (en) | 1988-07-19 | 1991-11-12 | Tokyo Electron Limited | Handling apparatus for transferring carriers and a method of transferring carriers |
| US5125358A (en) | 1988-07-26 | 1992-06-30 | Matsushita Electric Industrial Co., Ltd. | Microwave plasma film deposition system |
| IT1227708B (it) | 1988-07-29 | 1991-05-06 | Pomini Farrel Spa | Dispositivo di rilevamento della temperatura del materiale contenuto entro un apparecchio chiuso. |
| US4986215A (en) | 1988-09-01 | 1991-01-22 | Kyushu Electronic Metal Co., Ltd. | Susceptor for vapor-phase growth system |
| US5158128A (en) | 1988-09-01 | 1992-10-27 | Sumitec, Inc. | Thermocouple for a continuous casting machine |
| US4956538A (en) | 1988-09-09 | 1990-09-11 | Texas Instruments, Incorporated | Method and apparatus for real-time wafer temperature measurement using infrared pyrometry in advanced lamp-heated rapid thermal processors |
| JPH0293071A (ja) | 1988-09-29 | 1990-04-03 | Toshiba Corp | 薄膜の形成方法 |
| JP2918892B2 (ja) | 1988-10-14 | 1999-07-12 | 株式会社日立製作所 | プラズマエッチング処理方法 |
| WO1990004045A1 (en) | 1988-10-14 | 1990-04-19 | Advantage Production Technology Inc. | Semiconductor wafer processing method and apparatus |
| US5107170A (en) | 1988-10-18 | 1992-04-21 | Nissin Electric Co., Ltd. | Ion source having auxillary ion chamber |
| US4837185A (en) | 1988-10-26 | 1989-06-06 | Intel Corporation | Pulsed dual radio frequency CVD process |
| DE3836696C1 (en) | 1988-10-28 | 1989-12-07 | Fraunhofer-Gesellschaft Zur Foerderung Der Angewandten Forschung Ev, 8000 Muenchen, De | Lock for transporting material between clean rooms |
| US4962063A (en) | 1988-11-10 | 1990-10-09 | Applied Materials, Inc. | Multistep planarized chemical vapor deposition process with the use of low melting inorganic material for flowing while depositing |
| US5519234A (en) | 1991-02-25 | 1996-05-21 | Symetrix Corporation | Ferroelectric dielectric memory cell can switch at least giga cycles and has low fatigue - has high dielectric constant and low leakage current |
| US5119760A (en) | 1988-12-27 | 1992-06-09 | Symetrix Corporation | Methods and apparatus for material deposition |
| US5084126A (en) | 1988-12-29 | 1992-01-28 | Texas Instruments Incorporated | Method and apparatus for uniform flow distribution in plasma reactors |
| USD320148S (en) | 1988-12-30 | 1991-09-24 | Andrews Edward A | Drill socket |
| JPH02185038A (ja) | 1989-01-11 | 1990-07-19 | Nec Corp | 熱処理装置 |
| JPH0834187B2 (ja) | 1989-01-13 | 1996-03-29 | 東芝セラミックス株式会社 | サセプタ |
| US5160545A (en) | 1989-02-03 | 1992-11-03 | Applied Materials, Inc. | Method and apparatus for epitaxial deposition |
| EP0382984A1 (en) | 1989-02-13 | 1990-08-22 | L'air Liquide, Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude | Thermal decomposition trap |
| JPH0645893B2 (ja) | 1989-02-17 | 1994-06-15 | 科学技術庁長官官房会計課長 | 薄膜の形成方法 |
| DE8902307U1 (de) | 1989-02-27 | 1989-08-31 | Söhlbrand, Heinrich, Dr. Dipl.-Chem., 8027 Neuried | Vorrichtung zur thermischen Behandlung von Halbleitermaterialien |
| US5053247A (en) | 1989-02-28 | 1991-10-01 | Moore Epitaxial, Inc. | Method for increasing the batch size of a barrel epitaxial reactor and reactor produced thereby |
| NL8900544A (nl) | 1989-03-06 | 1990-10-01 | Asm Europ | Behandelingsstelsel, behandelingsvat en werkwijze voor het behandelen van een substraat. |
| US5088444A (en) | 1989-03-15 | 1992-02-18 | Kabushiki Kaisha Toshiba | Vapor deposition system |
| US4934831A (en) | 1989-03-20 | 1990-06-19 | Claud S. Gordon Company | Temperature sensing device |
| US5186120A (en) | 1989-03-22 | 1993-02-16 | Mitsubishi Denki Kabushiki Kaisha | Mixture thin film forming apparatus |
| EP0422243B1 (en) | 1989-03-31 | 1994-09-21 | Canon Kabushiki Kaisha | Method of forming polycrystalline film by chemical vapor deposition |
| NL8900980A (nl) | 1989-04-19 | 1990-11-16 | Asm Europ | Werkwijze voor het voorzien in een gedoseerde dampstroom alsmede inrichting voor het uitvoeren daarvan. |
| US5194401A (en) | 1989-04-18 | 1993-03-16 | Applied Materials, Inc. | Thermally processing semiconductor wafers at non-ambient pressures |
| US4920918A (en) | 1989-04-18 | 1990-05-01 | Applied Materials, Inc. | Pressure-resistant thermal reactor system for semiconductor processing |
| US4963506A (en) | 1989-04-24 | 1990-10-16 | Motorola Inc. | Selective deposition of amorphous and polycrystalline silicon |
| JP2779950B2 (ja) | 1989-04-25 | 1998-07-23 | 東陶機器株式会社 | 静電チャックの電圧印加方法および電圧印加装置 |
| JP2543224B2 (ja) | 1989-04-25 | 1996-10-16 | 松下電子工業株式会社 | 半導体装置とその製造方法 |
| US5192717A (en) | 1989-04-28 | 1993-03-09 | Canon Kabushiki Kaisha | Process for the formation of a polycrystalline semiconductor film by microwave plasma chemical vapor deposition method |
| US5360269A (en) | 1989-05-10 | 1994-11-01 | Tokyo Kogyo Kabushiki Kaisha | Immersion-type temperature measuring apparatus using thermocouple |
| US4987856A (en) | 1989-05-22 | 1991-01-29 | Advanced Semiconductor Materials America, Inc. | High throughput multi station processor for multiple single wafers |
| US5313061A (en) | 1989-06-06 | 1994-05-17 | Viking Instrument | Miniaturized mass spectrometer system |
| US5134965A (en) | 1989-06-16 | 1992-08-04 | Hitachi, Ltd. | Processing apparatus and method for plasma processing |
| US5061083A (en) | 1989-06-19 | 1991-10-29 | The United States Of America As Represented By The Department Of Energy | Temperature monitoring device and thermocouple assembly therefor |
| JP2890494B2 (ja) | 1989-07-11 | 1999-05-17 | セイコーエプソン株式会社 | プラズマ薄膜の製造方法 |
| US5022961B1 (en) | 1989-07-26 | 1997-05-27 | Dainippon Screen Mfg | Method for removing a film on a silicon layer surface |
| US5060322A (en) | 1989-07-27 | 1991-10-29 | Delepine Jean C | Shower room and ceiling element, especially for a shower room |
| US5013691A (en) | 1989-07-31 | 1991-05-07 | At&T Bell Laboratories | Anisotropic deposition of silicon dioxide |
| EP0606114A1 (en) | 1989-08-11 | 1994-07-13 | Seiko Instruments Inc. | Method of producing field effect transistor |
| US5213650A (en) | 1989-08-25 | 1993-05-25 | Applied Materials, Inc. | Apparatus for removing deposits from backside and end edge of semiconductor wafer while preventing removal of materials from front surface of wafer |
| FI83176C (fi) | 1989-09-12 | 1991-06-10 | Aitec Oy | Foerfarande foer styrning av roerelser hos en robot och en styckemanipulator under en robotcells inlaerningsskede. |
| US5057436A (en) | 1989-10-02 | 1991-10-15 | Agmaster, Inc. | Method and apparatus for detecting toxic gases |
| JPH03125453A (ja) | 1989-10-09 | 1991-05-28 | Toshiba Corp | 半導体ウエハ移送装置 |
| US5098865A (en) | 1989-11-02 | 1992-03-24 | Machado Jose R | High step coverage silicon oxide thin films |
| ATE109924T1 (de) | 1989-11-03 | 1994-08-15 | Asm Int | Verfahren zum ätzen von halbleiterscheiben mit halogenid in gegenwart von wasser. |
| JPH03155625A (ja) | 1989-11-14 | 1991-07-03 | Seiko Epson Corp | プラズマｃｖｄ膜の製造方法 |
| DE68927182T2 (de) | 1989-11-22 | 1997-01-30 | Nippon Steel Corp | Thermoelementähnliche temperaturfühler und verfahren zur temperaturmessung flüssigen stahles |
| US5002632A (en) | 1989-11-22 | 1991-03-26 | Texas Instruments Incorporated | Method and apparatus for etching semiconductor materials |
| US4987102A (en) | 1989-12-04 | 1991-01-22 | Motorola, Inc. | Process for forming high purity thin films |
| RU1786406C (ru) | 1989-12-12 | 1993-01-07 | Научно-Техническое Кооперативное Предприятие "Акцент" | Способ контрол дефектов на плоской отражающей поверхности и устройство дл его осуществлени |
| USD333606S (en) | 1989-12-12 | 1993-03-02 | Kabushiki Kaisha Kanemitsu | Pulley |
| JPH0738407B2 (ja) | 1989-12-28 | 1995-04-26 | 株式会社荏原製作所 | 保管庫 |
| JP2867526B2 (ja) | 1990-01-16 | 1999-03-08 | 富士通株式会社 | 半導体製造装置 |
| JP2723324B2 (ja) | 1990-01-25 | 1998-03-09 | 日本特殊陶業株式会社 | アルミナ焼結基板 |
| USD330900S (en) | 1990-02-08 | 1992-11-10 | Wakegijig William M | Drill adapter |
| JP2936623B2 (ja) | 1990-02-26 | 1999-08-23 | 日本電気株式会社 | 半導体装置の製造方法 |
| LU87693A1 (fr) | 1990-03-07 | 1991-10-08 | Wurth Paul Sa | Sonde de prise d'echantillons gazeux et de mesures thermiques dans un four a cuve |
| JPH03257182A (ja) | 1990-03-07 | 1991-11-15 | Hitachi Ltd | 表面加工装置 |
| DE69126724T2 (de) | 1990-03-19 | 1998-01-15 | Toshiba Kawasaki Kk | Vorrichtung zur Dampfphasenabscheidung |
| JPH03277774A (ja) | 1990-03-27 | 1991-12-09 | Semiconductor Energy Lab Co Ltd | 光気相反応装置 |
| US5310410A (en) | 1990-04-06 | 1994-05-10 | Sputtered Films, Inc. | Method for processing semi-conductor wafers in a multiple vacuum and non-vacuum chamber apparatus |
| DE4011933C2 (de) | 1990-04-12 | 1996-11-21 | Balzers Hochvakuum | Verfahren zur reaktiven Oberflächenbehandlung eines Werkstückes sowie Behandlungskammer hierfür |
| US5243202A (en) | 1990-04-25 | 1993-09-07 | Casio Computer Co., Ltd. | Thin-film transistor and a liquid crystal matrix display device using thin-film transistors of this type |
| US5328810A (en) | 1990-05-07 | 1994-07-12 | Micron Technology, Inc. | Method for reducing, by a factor or 2-N, the minimum masking pitch of a photolithographic process |
| US5356672A (en) | 1990-05-09 | 1994-10-18 | Jet Process Corporation | Method for microwave plasma assisted supersonic gas jet deposition of thin films |
| CA2016970A1 (en) | 1990-05-16 | 1991-11-16 | Prasad N. Gadgil | Inverted diffusion stagnation point flow reactor for vapor deposition of thin films |
| JPH0429313A (ja) | 1990-05-24 | 1992-01-31 | Fujitsu Ltd | 半導体結晶の製造装置 |
| US5130003A (en) | 1990-06-14 | 1992-07-14 | Conrad Richard H | method of powering corona discharge in ozone generators |
| US5393577A (en) | 1990-06-19 | 1995-02-28 | Nec Corporation | Method for forming a patterned layer by selective chemical vapor deposition |
| US5225366A (en) | 1990-06-22 | 1993-07-06 | The United States Of America As Represented By The Secretary Of The Navy | Apparatus for and a method of growing thin films of elemental semiconductors |
| NL9001451A (nl) | 1990-06-25 | 1992-01-16 | Asm Europ | Driewegklep. |
| KR0153250B1 (ko) | 1990-06-28 | 1998-12-01 | 카자마 겐쥬 | 종형 열처리 장치 |
| JPH0464025A (ja) | 1990-07-02 | 1992-02-28 | Matsushita Electric Ind Co Ltd | 調理器用温度センサー |
| US5362328A (en) | 1990-07-06 | 1994-11-08 | Advanced Technology Materials, Inc. | Apparatus and method for delivering reagents in vapor form to a CVD reactor, incorporating a cleaning subsystem |
| KR0184849B1 (ko) | 1990-07-18 | 1999-05-01 | 하지메 히토추야나기 | 다이아몬드 제조방법 및 장치 |
| KR0176715B1 (ko) | 1990-07-30 | 1999-04-15 | 오가 노리오 | 드라이에칭방법 |
| US5231062A (en) | 1990-08-09 | 1993-07-27 | Minnesota Mining And Manufacturing Company | Transparent aluminum oxynitride-based ceramic article |
| US5082517A (en) | 1990-08-23 | 1992-01-21 | Texas Instruments Incorporated | Plasma density controller for semiconductor device processing equipment |
| JPH04115531A (ja) | 1990-09-05 | 1992-04-16 | Mitsubishi Electric Corp | 化学気相成長装置 |
| US5273609A (en) | 1990-09-12 | 1993-12-28 | Texas Instruments Incorporated | Method and apparatus for time-division plasma chopping in a multi-channel plasma processing equipment |
| US5261167A (en) | 1990-09-27 | 1993-11-16 | Tokyo Electron Sagami Limited | Vertical heat treating apparatus |
| US5167716A (en) | 1990-09-28 | 1992-12-01 | Gasonics, Inc. | Method and apparatus for batch processing a semiconductor wafer |
| JP2780866B2 (ja) | 1990-10-11 | 1998-07-30 | 大日本スクリーン製造 株式会社 | 光照射加熱基板の温度測定装置 |
| TW214599B (zh) | 1990-10-15 | 1993-10-11 | Seiko Epson Corp | |
| JP2714247B2 (ja) | 1990-10-29 | 1998-02-16 | キヤノン株式会社 | マイクロ波プラズマｃｖｄ法による大面積の機能性堆積膜を連続的に形成する方法及び装置 |
| US5228114A (en) | 1990-10-30 | 1993-07-13 | Tokyo Electron Sagami Limited | Heat-treating apparatus with batch scheme having improved heat controlling capability |
| US5304248A (en) | 1990-12-05 | 1994-04-19 | Applied Materials, Inc. | Passive shield for CVD wafer processing which provides frontside edge exclusion and prevents backside depositions |
| US5855687A (en) | 1990-12-05 | 1999-01-05 | Applied Materials, Inc. | Substrate support shield in wafer processing reactors |
| JP2839720B2 (ja) | 1990-12-19 | 1998-12-16 | 株式会社東芝 | 熱処理装置 |
| US5071258A (en) | 1991-02-01 | 1991-12-10 | Vesuvius Crucible Company | Thermocouple assembly |
| DE69117166T2 (de) | 1991-02-15 | 1996-07-04 | Air Liquide | Verfahren zur Herstellung eines faserverstärkten keramischen Verbundwerkstoffs |
| JPH05136218A (ja) | 1991-02-19 | 1993-06-01 | Tokyo Electron Yamanashi Kk | 検査装置 |
| US6110531A (en) | 1991-02-25 | 2000-08-29 | Symetrix Corporation | Method and apparatus for preparing integrated circuit thin films by chemical vapor deposition |
| JP2740050B2 (ja) | 1991-03-19 | 1998-04-15 | 株式会社東芝 | 溝埋込み配線形成方法 |
| JP2986121B2 (ja) | 1991-03-26 | 1999-12-06 | 東京エレクトロン株式会社 | ロードロック装置及び真空処理装置 |
| US5271732A (en) | 1991-04-03 | 1993-12-21 | Tokyo Electron Sagami Kabushiki Kaisha | Heat-treating apparatus |
| EP0577766B1 (en) | 1991-04-04 | 1999-12-29 | Seagate Technology, Inc. | Apparatus and method for high throughput sputtering |
| JP3323530B2 (ja) | 1991-04-04 | 2002-09-09 | 株式会社日立製作所 | 半導体装置の製造方法 |
| US5182232A (en) | 1991-04-08 | 1993-01-26 | Micron Technology, Inc. | Metal silicide texturizing technique |
| US5116018A (en) | 1991-04-12 | 1992-05-26 | Automax, Inc. | Lockout modules |
| JPH0812847B2 (ja) | 1991-04-22 | 1996-02-07 | 株式会社半導体プロセス研究所 | 半導体製造装置及び半導体装置の製造方法 |
| US5243195A (en) | 1991-04-25 | 1993-09-07 | Nikon Corporation | Projection exposure apparatus having an off-axis alignment system and method of alignment therefor |
| US5125710A (en) | 1991-05-14 | 1992-06-30 | Angelo Gianelo | Under-platform drawer for trucks |
| US5565038A (en) | 1991-05-16 | 1996-10-15 | Intel Corporation | Interhalogen cleaning of process equipment |
| US5104514A (en) | 1991-05-16 | 1992-04-14 | The United States Of America As Represented By The Secretary Of The Navy | Protective coating system for aluminum |
| US5193969A (en) | 1991-05-20 | 1993-03-16 | Fortrend Engineering Corporation | Wafer transfer machine |
| US5234526A (en) | 1991-05-24 | 1993-08-10 | Lam Research Corporation | Window for microwave plasma processing device |
| US5252134A (en) | 1991-05-31 | 1993-10-12 | Stauffer Craig M | Integrated delivery system for chemical vapor from non-gaseous sources for semiconductor processing |
| JP3002013B2 (ja) | 1991-06-04 | 2000-01-24 | 松下技研株式会社 | 薄膜および多層膜の製造方法およびその製造装置 |
| US5249960A (en) | 1991-06-14 | 1993-10-05 | Tokyo Electron Sagami Kabushiki Kaisha | Forced cooling apparatus for heat treatment apparatus |
| US6095083A (en) | 1991-06-27 | 2000-08-01 | Applied Materiels, Inc. | Vacuum processing chamber having multi-mode access |
| JP3086719B2 (ja) | 1991-06-27 | 2000-09-11 | 株式会社東芝 | 表面処理方法 |
| DE4122452C2 (de) | 1991-07-06 | 1993-10-28 | Schott Glaswerke | Verfahren und Vorrichtung zum Zünden von CVD-Plasmen |
| US5221369A (en) | 1991-07-08 | 1993-06-22 | Air Products And Chemicals, Inc. | In-situ generation of heat treating atmospheres using non-cryogenically produced nitrogen |
| JPH0523079A (ja) | 1991-07-19 | 1993-02-02 | Shimano Inc | 釣り竿及びその製造方法 |
| US5277932A (en) | 1991-07-29 | 1994-01-11 | Syracuse University | CVD method for forming metal boride films using metal borane cluster compounds |
| JP2580928Y2 (ja) | 1991-08-22 | 1998-09-17 | 日本電気株式会社 | 気相成長装置 |
| US5137286A (en) | 1991-08-23 | 1992-08-11 | General Electric Company | Permanent magnet floating shaft seal |
| CA2069132C (en) | 1991-08-29 | 1996-01-09 | Koji Fujii | Light-beam heating apparatus |
| JP3040212B2 (ja) | 1991-09-05 | 2000-05-15 | 株式会社東芝 | 気相成長装置 |
| US5294778A (en) | 1991-09-11 | 1994-03-15 | Lam Research Corporation | CVD platen heater system utilizing concentric electric heating elements |
| US5154301A (en) | 1991-09-12 | 1992-10-13 | Fluoroware, Inc. | Wafer carrier |
| JPH05217921A (ja) | 1991-09-13 | 1993-08-27 | Motorola Inc | 材料膜のエピタキシアル成長を行うための温度制御された処理 |
| EP0533568A1 (en) | 1991-09-17 | 1993-03-24 | Sumitomo Electric Industries, Ltd. | Superconducting thin film formed of oxide superconductor material, superconducting device utilizing the superconducting thin film and method for manufacturing thereof |
| FR2682047B1 (fr) | 1991-10-07 | 1993-11-12 | Commissariat A Energie Atomique | Reacteur de traitement chimique en phase gazeuse. |
| JPH05118928A (ja) | 1991-10-25 | 1993-05-14 | Tokyo Electron Ltd | 接触式の温度測定方法 |
| US5219226A (en) | 1991-10-25 | 1993-06-15 | Quadtek, Inc. | Imaging and temperature monitoring system |
| US5387265A (en) | 1991-10-29 | 1995-02-07 | Kokusai Electric Co., Ltd. | Semiconductor wafer reaction furnace with wafer transfer means |
| US5193912A (en) | 1991-11-18 | 1993-03-16 | Saunders Roger I | Probe for sensing and measuring temperature |
| US5199603A (en) | 1991-11-26 | 1993-04-06 | Prescott Norman F | Delivery system for organometallic compounds |
| US6400996B1 (en) | 1999-02-01 | 2002-06-04 | Steven M. Hoffberg | Adaptive pattern recognition based control system and method |
| JPH05171446A (ja) | 1991-12-24 | 1993-07-09 | Furukawa Electric Co Ltd:The | 薄膜形成方法 |
| DE69227575T2 (de) | 1991-12-30 | 1999-06-02 | Texas Instruments Inc | Programmierbarer Multizonen-Gasinjektor für eine Anlage zur Behandlung von einzelnen Halbleiterscheiben |
| US5414221A (en) | 1991-12-31 | 1995-05-09 | Intel Corporation | Embedded ground plane and shielding structures using sidewall insulators in high frequency circuits having vias |
| US5443686A (en) | 1992-01-15 | 1995-08-22 | International Business Machines Corporation Inc. | Plasma CVD apparatus and processes |
| US5215588A (en) | 1992-01-17 | 1993-06-01 | Amtech Systems, Inc. | Photo-CVD system |
| US6379466B1 (en) | 1992-01-17 | 2002-04-30 | Applied Materials, Inc. | Temperature controlled gas distribution plate |
| US5480818A (en) | 1992-02-10 | 1996-01-02 | Fujitsu Limited | Method for forming a film and method for manufacturing a thin film transistor |
| JP2506539B2 (ja) | 1992-02-27 | 1996-06-12 | 株式会社ジーティシー | 絶縁膜の形成方法 |
| US5208961A (en) | 1992-02-28 | 1993-05-11 | National Semiconductor Corporation | Semiconductor processing furnace door alignment apparatus and method |
| NL9200446A (nl) | 1992-03-10 | 1993-10-01 | Tempress B V | Inrichting voor het behandelen van microschakeling-schijven (wafers). |
| US5226383A (en) | 1992-03-12 | 1993-07-13 | Bell Communications Research, Inc. | Gas foil rotating substrate holder |
| JPH05267186A (ja) | 1992-03-18 | 1993-10-15 | Fujitsu Ltd | 気相成長装置および該装置を用いた気相成長方法 |
| US5766360A (en) | 1992-03-27 | 1998-06-16 | Kabushiki Kaisha Toshiba | Substrate processing apparatus and substrate processing method |
| JP3191392B2 (ja) | 1992-04-07 | 2001-07-23 | 神鋼電機株式会社 | クリーンルーム用密閉式コンテナ |
| JPH05291142A (ja) | 1992-04-15 | 1993-11-05 | Nec Corp | 液体ソース供給装置 |
| US5268989A (en) | 1992-04-16 | 1993-12-07 | Texas Instruments Incorporated | Multi zone illuminator with embeded process control sensors and light interference elimination circuit |
| US5226967A (en) | 1992-05-14 | 1993-07-13 | Lam Research Corporation | Plasma apparatus including dielectric window for inducing a uniform electric field in a plasma chamber |
| US5455069A (en) | 1992-06-01 | 1995-10-03 | Motorola, Inc. | Method of improving layer uniformity in a CVD reactor |
| US5569402A (en) | 1992-06-03 | 1996-10-29 | Esec S.A. | Curing oven for magazine holding computer chip lead frames, providing flow direction control for hot gas stream |
| US5461214A (en) | 1992-06-15 | 1995-10-24 | Thermtec, Inc. | High performance horizontal diffusion furnace system |
| DE69320963T2 (de) | 1992-06-22 | 1999-05-12 | Lam Research Corp., Fremont, Calif. | Plasmareinigungsverfahren zum entfernen von rückständen in einer plasmabehandlungskammer |
| US5534072A (en) | 1992-06-24 | 1996-07-09 | Anelva Corporation | Integrated module multi-chamber CVD processing system and its method for processing subtrates |
| JP2964779B2 (ja) | 1992-06-29 | 1999-10-18 | 松下電器産業株式会社 | 光学素子のプレス成形用金型 |
| JP3148004B2 (ja) | 1992-07-06 | 2001-03-19 | 株式会社東芝 | 光ｃｖｄ装置及びこれを用いた半導体装置の製造方法 |
| US5601641A (en) | 1992-07-21 | 1997-02-11 | Tse Industries, Inc. | Mold release composition with polybutadiene and method of coating a mold core |
| US5306666A (en) | 1992-07-24 | 1994-04-26 | Nippon Steel Corporation | Process for forming a thin metal film by chemical vapor deposition |
| JPH0653210A (ja) | 1992-07-28 | 1994-02-25 | Nec Corp | 半導体装置 |
| KR100304127B1 (ko) | 1992-07-29 | 2001-11-30 | 이노마다 시게오 | 가반식 밀폐 컨테이너를 사용한 전자기판 처리시스템과 그의 장치 |
| JP3334911B2 (ja) | 1992-07-31 | 2002-10-15 | キヤノン株式会社 | パターン形成方法 |
| ES2078718T3 (es) | 1992-08-04 | 1995-12-16 | Ibm | Estructuras de cadenas de fabricacion a base de transportadores totalmente automatizados e informatizados adaptados a recipientes transportables estancos a presion. |
| US5271967A (en) | 1992-08-21 | 1993-12-21 | General Motors Corporation | Method and apparatus for application of thermal spray coatings to engine blocks |
| USD363464S (en) | 1992-08-27 | 1995-10-24 | Tokyo Electron Yamanashi Limited | Electrode for a semiconductor processing apparatus |
| US5338362A (en) | 1992-08-29 | 1994-08-16 | Tokyo Electron Limited | Apparatus for processing semiconductor wafer comprising continuously rotating wafer table and plural chamber compartments |
| JP3183575B2 (ja) | 1992-09-03 | 2001-07-09 | 東京エレクトロン株式会社 | 処理装置および処理方法 |
| US5326427A (en) | 1992-09-11 | 1994-07-05 | Lsi Logic Corporation | Method of selectively etching titanium-containing materials on a semiconductor wafer using remote plasma generation |
| US5246218A (en) | 1992-09-25 | 1993-09-21 | Intel Corporation | Apparatus for securing an automatically loaded wafer cassette on a wafer processing equipment |
| US5280894A (en) | 1992-09-30 | 1994-01-25 | Honeywell Inc. | Fixture for backside wafer etching |
| US6438502B1 (en) | 1992-10-07 | 2002-08-20 | Dallas Semiconductor Corporation | Environmental condition sensor device and method |
| USD354898S (en) | 1992-10-13 | 1995-01-31 | Verdel Innovations | Egg holder for use with a stand for decorating eggs |
| JP2906873B2 (ja) | 1992-10-26 | 1999-06-21 | 日本電気株式会社 | 金配線の製造方法 |
| JP3190745B2 (ja) | 1992-10-27 | 2001-07-23 | 株式会社東芝 | 気相成長方法 |
| JP3179212B2 (ja) | 1992-10-27 | 2001-06-25 | 日本電気株式会社 | 半導体装置の製造方法 |
| JP3093487B2 (ja) | 1992-10-28 | 2000-10-03 | 松下電子工業株式会社 | 半導体装置およびその製造方法 |
| DE4236324C1 (zh) | 1992-10-28 | 1993-09-02 | Schott Glaswerke, 55122 Mainz, De | |
| US6235858B1 (en) | 1992-10-30 | 2001-05-22 | Ppg Industries Ohio, Inc. | Aminoplast curable film-forming compositions providing films having resistance to acid etching |
| JPH06295862A (ja) | 1992-11-20 | 1994-10-21 | Mitsubishi Electric Corp | 化合物半導体製造装置及び有機金属材料容器 |
| JPH086181B2 (ja) | 1992-11-30 | 1996-01-24 | 日本電気株式会社 | 化学気相成長法および化学気相成長装置 |
| IT1257434B (it) | 1992-12-04 | 1996-01-17 | Cselt Centro Studi Lab Telecom | Generatore di vapori per impianti di deposizione chimica da fase vapore |
| KR100238629B1 (ko) | 1992-12-17 | 2000-01-15 | 히가시 데쓰로 | 정전척을 가지는 재치대 및 이것을 이용한 플라즈마 처리장치 |
| US5295777A (en) | 1992-12-23 | 1994-03-22 | Materials Research Corporation | Wafer transport module with rotatable and horizontally extendable wafer holder |
| DE4244189C2 (de) | 1992-12-24 | 1995-06-01 | Busch Dieter & Co Prueftech | Anlegetemperaturfühler |
| US5453124A (en) | 1992-12-30 | 1995-09-26 | Texas Instruments Incorporated | Programmable multizone gas injector for single-wafer semiconductor processing equipment |
| CA2114294A1 (en) | 1993-01-05 | 1995-07-27 | Thomas Earle Allen | Apparatus and method for continuously mixing fluids |
| US5478429A (en) | 1993-01-20 | 1995-12-26 | Tokyo Electron Limited | Plasma process apparatus |
| US5820686A (en) | 1993-01-21 | 1998-10-13 | Moore Epitaxial, Inc. | Multi-layer susceptor for rapid thermal process reactors |
| US5444217A (en) | 1993-01-21 | 1995-08-22 | Moore Epitaxial Inc. | Rapid thermal processing apparatus for processing semiconductor wafers |
| US5447294A (en) | 1993-01-21 | 1995-09-05 | Tokyo Electron Limited | Vertical type heat treatment system |
| US5709745A (en) | 1993-01-25 | 1998-01-20 | Ohio Aerospace Institute | Compound semi-conductors and controlled doping thereof |
| JP3245246B2 (ja) | 1993-01-27 | 2002-01-07 | 東京エレクトロン株式会社 | 熱処理装置 |
| JP2683208B2 (ja) | 1993-01-28 | 1997-11-26 | アプライド マテリアルズ インコーポレイテッド | ロボット機構を用いた搬入および搬出のためのワークピース位置合わせ方法および装置 |
| JP3258748B2 (ja) | 1993-02-08 | 2002-02-18 | 東京エレクトロン株式会社 | 熱処理装置 |
| JPH06319177A (ja) | 1993-02-24 | 1994-11-15 | Hewlett Packard Co <Hp> | 適応遠隔制御システム |
| US5421893A (en) | 1993-02-26 | 1995-06-06 | Applied Materials, Inc. | Susceptor drive and wafer displacement mechanism |
| JP3348936B2 (ja) | 1993-10-21 | 2002-11-20 | 東京エレクトロン株式会社 | 縦型熱処理装置 |
| KR100261532B1 (ko) | 1993-03-14 | 2000-07-15 | 야마시타 히데나리 | 피처리체 반송장치를 가지는 멀티챔버 시스템 |
| JP3265042B2 (ja) | 1993-03-18 | 2002-03-11 | 東京エレクトロン株式会社 | 成膜方法 |
| JP2948437B2 (ja) | 1993-03-18 | 1999-09-13 | 富士通株式会社 | 論理シミュレーション用のデータ作成方法 |
| US5305417A (en) | 1993-03-26 | 1994-04-19 | Texas Instruments Incorporated | Apparatus and method for determining wafer temperature using pyrometry |
| DE4311197A1 (de) | 1993-04-05 | 1994-10-06 | Patent Treuhand Ges Fuer Elektrische Gluehlampen Mbh | Verfahren zum Betreiben einer inkohärent strahlenden Lichtquelle |
| US5346961A (en) | 1993-04-07 | 1994-09-13 | Union Carbide Chemicals & Plastics Technology Corporation | Process for crosslinking |
| JP3190165B2 (ja) | 1993-04-13 | 2001-07-23 | 東京エレクトロン株式会社 | 縦型熱処理装置及び熱処理方法 |
| KR100221983B1 (ko) | 1993-04-13 | 1999-09-15 | 히가시 데쓰로 | 처리장치 |
| EP0621051B1 (de) | 1993-04-17 | 2001-08-22 | MESSER GRIESHEIM AUSTRIA Ges.m.b.H. | Gerät zur kontrollierten Zudosierung von NO zur Atemluft von Patienten |
| JPH06310438A (ja) | 1993-04-22 | 1994-11-04 | Mitsubishi Electric Corp | 化合物半導体気相成長用基板ホルダおよび化合物半導体気相成長装置 |
| US5404082A (en) | 1993-04-23 | 1995-04-04 | North American Philips Corporation | High frequency inverter with power-line-controlled frequency modulation |
| USD353452S (en) | 1993-04-27 | 1994-12-13 | Groenhoff Larry C | Window adapter for portable box fans |
| US5637153A (en) | 1993-04-30 | 1997-06-10 | Tokyo Electron Limited | Method of cleaning reaction tube and exhaustion piping system in heat processing apparatus |
| WO1994027315A1 (en) | 1993-05-13 | 1994-11-24 | Interuniversitair Microelektronica Centrum | Method for semiconductor processing using mixtures of hf and carboxylic acid |
| JPH06330323A (ja) | 1993-05-18 | 1994-11-29 | Mitsubishi Electric Corp | 半導体装置製造装置及びそのクリーニング方法 |
| JPH0711446A (ja) | 1993-05-27 | 1995-01-13 | Applied Materials Inc | 気相成長用サセプタ装置 |
| JP2508581B2 (ja) | 1993-05-28 | 1996-06-19 | 日本電気株式会社 | 化学気相成長法 |
| US5501740A (en) | 1993-06-04 | 1996-03-26 | Applied Science And Technology, Inc. | Microwave plasma reactor |
| US5354580A (en) | 1993-06-08 | 1994-10-11 | Cvd Incorporated | Triangular deposition chamber for a vapor deposition system |
| US5616264A (en) | 1993-06-15 | 1997-04-01 | Tokyo Electron Limited | Method and apparatus for controlling temperature in rapid heat treatment system |
| JPH0799162A (ja) | 1993-06-21 | 1995-04-11 | Hitachi Ltd | Ｃｖｄリアクタ装置 |
| DE69415408T2 (de) | 1993-06-28 | 1999-06-10 | Canon K.K., Tokio/Tokyo | Wärmeerzeugender, TaNO.8 enthaltender Widerstand, Substrat mit diesem wärmeerzeugenden Widerstand für Flüssigkeitsstrahlkopf, Flüssigkeitsstrahlkopf mit diesem Substrat, und Gerät für einen Flüssigkeitsstrahl mit diesem Flüssigkeitsstrahlkopf |
| US5997768A (en) | 1993-06-29 | 1999-12-07 | Ciba Specialty Chemicals Corporation | Pelletization of metal soap powders |
| US5484484A (en) | 1993-07-03 | 1996-01-16 | Tokyo Electron Kabushiki | Thermal processing method and apparatus therefor |
| US5972196A (en) | 1995-06-07 | 1999-10-26 | Lynntech, Inc. | Electrochemical production of ozone and hydrogen peroxide |
| DE69404397T2 (de) | 1993-07-13 | 1997-11-13 | Applied Materials Inc | Verbesserte Suszeptor Ausführung |
| JPH0729836A (ja) | 1993-07-14 | 1995-01-31 | Sony Corp | プラズマシリコンナイトライド膜の形成方法 |
| US5312245A (en) | 1993-07-16 | 1994-05-17 | International Business Machines Corporation | Particulate trap for vertical furnace |
| JP3667781B2 (ja) | 1993-07-16 | 2005-07-06 | 株式会社日立製作所 | エンジンシステムの診断装置 |
| US5540821A (en) | 1993-07-16 | 1996-07-30 | Applied Materials, Inc. | Method and apparatus for adjustment of spacing between wafer and PVD target during semiconductor processing |
| US5415753A (en) | 1993-07-22 | 1995-05-16 | Materials Research Corporation | Stationary aperture plate for reactive sputter deposition |
| US5350480A (en) | 1993-07-23 | 1994-09-27 | Aspect International, Inc. | Surface cleaning and conditioning using hot neutral gas beam array |
| FR2708624A1 (fr) | 1993-07-30 | 1995-02-10 | Neuville Stephane | Procédé de dépôt d'un revêtement protecteur à base de pseudo carbone diamant amorphe ou de carbure de silicium modifié. |
| US5348774A (en) | 1993-08-11 | 1994-09-20 | Alliedsignal Inc. | Method of rapidly densifying a porous structure |
| JPH0766267A (ja) | 1993-08-27 | 1995-03-10 | Kokusai Electric Co Ltd | ウェーハカセット授受装置 |
| JP3418458B2 (ja) | 1993-08-31 | 2003-06-23 | 富士通株式会社 | 半導体装置の製造方法 |
| JP3576188B2 (ja) | 1993-08-31 | 2004-10-13 | 株式会社半導体エネルギー研究所 | 気相反応装置および気相反応方法 |
| US5418382A (en) | 1993-09-23 | 1995-05-23 | Fsi International, Inc. | Substrate location and detection apparatus |
| US5417803A (en) | 1993-09-29 | 1995-05-23 | Intel Corporation | Method for making Si/SiC composite material |
| KR100260120B1 (ko) | 1993-09-30 | 2000-07-01 | 마쓰바 구니유키 | 열처리 장치 |
| US5378501A (en) | 1993-10-05 | 1995-01-03 | Foster; Robert F. | Method for chemical vapor deposition of titanium nitride films at low temperatures |
| JPH07109576A (ja) | 1993-10-07 | 1995-04-25 | Shinko Seiki Co Ltd | プラズマｃｖｄによる成膜方法 |
| US6122036A (en) | 1993-10-21 | 2000-09-19 | Nikon Corporation | Projection exposure apparatus and method |
| JP2682403B2 (ja) | 1993-10-29 | 1997-11-26 | 日本電気株式会社 | 半導体装置の製造方法 |
| US5650082A (en) | 1993-10-29 | 1997-07-22 | Applied Materials, Inc. | Profiled substrate heating |
| DE69408405T2 (de) | 1993-11-11 | 1998-08-20 | Nissin Electric Co Ltd | Plasma-CVD-Verfahren und Vorrichtung |
| US5413813A (en) | 1993-11-23 | 1995-05-09 | Enichem S.P.A. | CVD of silicon-based ceramic materials on internal surface of a reactor |
| US5463176A (en) | 1994-01-03 | 1995-10-31 | Eckert; C. Edward | Liquid waste oxygenation |
| JPH07209093A (ja) | 1994-01-20 | 1995-08-11 | Tokyo Electron Ltd | 温度計 |
| US5616947A (en) | 1994-02-01 | 1997-04-01 | Matsushita Electric Industrial Co., Ltd. | Semiconductor device having an MIS structure |
| US5681779A (en) | 1994-02-04 | 1997-10-28 | Lsi Logic Corporation | Method of doping metal layers for electromigration resistance |
| JPH07225214A (ja) | 1994-02-14 | 1995-08-22 | Shimadzu Corp | ＮＯｘ計測装置 |
| JP2844304B2 (ja) | 1994-02-15 | 1999-01-06 | 日本原子力研究所 | プラズマ対向材料 |
| US5888304A (en) | 1996-04-02 | 1999-03-30 | Applied Materials, Inc. | Heater with shadow ring and purge above wafer surface |
| US5766365A (en) | 1994-02-23 | 1998-06-16 | Applied Materials, Inc. | Removable ring for controlling edge deposition in substrate processing apparatus |
| US5645646A (en) | 1994-02-25 | 1997-07-08 | Applied Materials, Inc. | Susceptor for deposition apparatus |
| JP2959947B2 (ja) | 1994-02-28 | 1999-10-06 | 信越石英株式会社 | 原料ガス供給方法及び装置 |
| US5589002A (en) | 1994-03-24 | 1996-12-31 | Applied Materials, Inc. | Gas distribution plate for semiconductor wafer processing apparatus with means for inhibiting arcing |
| US5900103A (en) | 1994-04-20 | 1999-05-04 | Tokyo Electron Limited | Plasma treatment method and apparatus |
| JP3211548B2 (ja) | 1994-03-30 | 2001-09-25 | ウシオ電機株式会社 | 誘電体バリア放電蛍光ランプ |
| JPH07283149A (ja) | 1994-04-04 | 1995-10-27 | Nissin Electric Co Ltd | 薄膜気相成長装置 |
| US5685914A (en) | 1994-04-05 | 1997-11-11 | Applied Materials, Inc. | Focus ring for semiconductor wafer processing in a plasma reactor |
| EP0678909B1 (en) | 1994-04-20 | 1999-07-14 | STMicroelectronics S.r.l. | Monitoring of rf-plasma induced potential on a gate dielectric inside a plasma etcher |
| JPH07297271A (ja) | 1994-04-22 | 1995-11-10 | Shinko Electric Co Ltd | 異サイズのウェ−ハカセットを任意に支持可能な支持機構 |
| US5431734A (en) | 1994-04-28 | 1995-07-11 | International Business Machines Corporation | Aluminum oxide low pressure chemical vapor deposition (LPCVD) system-fourier transform infrared (FTIR) source chemical control |
| US6447232B1 (en) | 1994-04-28 | 2002-09-10 | Semitool, Inc. | Semiconductor wafer processing apparatus having improved wafer input/output handling system |
| RU95106478A (ru) | 1994-04-29 | 1997-01-20 | Моторола | Устройство и способ для разложения химических соединений |
| US5456207A (en) | 1994-05-16 | 1995-10-10 | The United States Of America As Represented By The Secretary Of The Navy | Synthesis of triisopropylindium diisopropyltelluride adduct and use for semiconductor materials |
| US5775889A (en) | 1994-05-17 | 1998-07-07 | Tokyo Electron Limited | Heat treatment process for preventing slips in semiconductor wafers |
| US5531835A (en) | 1994-05-18 | 1996-07-02 | Applied Materials, Inc. | Patterned susceptor to reduce electrostatic force in a CVD chamber |
| JP3181171B2 (ja) | 1994-05-20 | 2001-07-03 | シャープ株式会社 | 気相成長装置および気相成長方法 |
| KR960002534A (ko) | 1994-06-07 | 1996-01-26 | 이노우에 아키라 | 감압·상압 처리장치 |
| KR0144956B1 (ko) | 1994-06-10 | 1998-08-17 | 김광호 | 반도체 장치의 배선 구조 및 그 형성방법 |
| GB9411911D0 (en) | 1994-06-14 | 1994-08-03 | Swan Thomas & Co Ltd | Improvements in or relating to chemical vapour deposition |
| CN1274009C (zh) | 1994-06-15 | 2006-09-06 | 精工爱普生株式会社 | 薄膜半导体器件的制造方法 |
| US5518780A (en) | 1994-06-16 | 1996-05-21 | Ford Motor Company | Method of making hard, transparent amorphous hydrogenated boron nitride films |
| US5423942A (en) | 1994-06-20 | 1995-06-13 | Texas Instruments Incorporated | Method and apparatus for reducing etching erosion in a plasma containment tube |
| US5504042A (en) | 1994-06-23 | 1996-04-02 | Texas Instruments Incorporated | Porous dielectric material with improved pore surface properties for electronics applications |
| US5510277A (en) | 1994-06-29 | 1996-04-23 | At&T Corp. | Surface treatment for silicon substrates |
| JP2709568B2 (ja) | 1994-06-30 | 1998-02-04 | 日本プレシジョン・サーキッツ株式会社 | ダウンフロー型スピンドライヤ |
| US5826129A (en) | 1994-06-30 | 1998-10-20 | Tokyo Electron Limited | Substrate processing system |
| US6022414A (en) | 1994-07-18 | 2000-02-08 | Semiconductor Equipment Group, Llc | Single body injector and method for delivering gases to a surface |
| US5838029A (en) | 1994-08-22 | 1998-11-17 | Rohm Co., Ltd. | GaN-type light emitting device formed on a silicon substrate |
| US5730801A (en) | 1994-08-23 | 1998-03-24 | Applied Materials, Inc. | Compartnetalized substrate processing chamber |
| JPH0878347A (ja) | 1994-09-06 | 1996-03-22 | Komatsu Electron Metals Co Ltd | エピタキシャル成長装置のサセプタ |
| US5669713A (en) | 1994-09-27 | 1997-09-23 | Rosemount Inc. | Calibration of process control temperature transmitter |
| JPH0897167A (ja) | 1994-09-28 | 1996-04-12 | Tokyo Electron Ltd | 処理装置及び熱処理装置 |
| JP3632256B2 (ja) | 1994-09-30 | 2005-03-23 | 株式会社デンソー | 窒化シリコン膜を有する半導体装置の製造方法 |
| US5514439A (en) | 1994-10-14 | 1996-05-07 | Sibley; Thomas | Wafer support fixtures for rapid thermal processing |
| US5576629A (en) | 1994-10-24 | 1996-11-19 | Fourth State Technology, Inc. | Plasma monitoring and control method and system |
| JP2845163B2 (ja) | 1994-10-27 | 1999-01-13 | 日本電気株式会社 | プラズマ処理方法及びその装置 |
| CA2204736A1 (en) | 1994-11-08 | 1996-05-23 | Charles H. Ferguson | An online service development tool with fee setting capabilities |
| US5562947A (en) | 1994-11-09 | 1996-10-08 | Sony Corporation | Method and apparatus for isolating a susceptor heating element from a chemical vapor deposition environment |
| US6699530B2 (en) | 1995-07-06 | 2004-03-02 | Applied Materials, Inc. | Method for constructing a film on a semiconductor wafer |
| US5811022A (en) | 1994-11-15 | 1998-09-22 | Mattson Technology, Inc. | Inductive plasma reactor |
| US5583736A (en) | 1994-11-17 | 1996-12-10 | The United States Of America As Represented By The Department Of Energy | Micromachined silicon electrostatic chuck |
| FI97731C (fi) | 1994-11-28 | 1997-02-10 | Mikrokemia Oy | Menetelmä ja laite ohutkalvojen valmistamiseksi |
| FI97730C (fi) | 1994-11-28 | 1997-02-10 | Mikrokemia Oy | Laitteisto ohutkalvojen valmistamiseksi |
| FI100409B (fi) | 1994-11-28 | 1997-11-28 | Asm Int | Menetelmä ja laitteisto ohutkalvojen valmistamiseksi |
| US5558717A (en) | 1994-11-30 | 1996-09-24 | Applied Materials | CVD Processing chamber |
| JPH08181135A (ja) | 1994-12-22 | 1996-07-12 | Sharp Corp | 半導体装置の製造方法 |
| US5776254A (en) | 1994-12-28 | 1998-07-07 | Mitsubishi Denki Kabushiki Kaisha | Apparatus for forming thin film by chemical vapor deposition |
| US5716133A (en) | 1995-01-17 | 1998-02-10 | Applied Komatsu Technology, Inc. | Shielded heat sensor for measuring temperature |
| US5586585A (en) | 1995-02-27 | 1996-12-24 | Asyst Technologies, Inc. | Direct loadlock interface |
| JP3151118B2 (ja) | 1995-03-01 | 2001-04-03 | 東京エレクトロン株式会社 | 熱処理装置 |
| AUPN164695A0 (en) | 1995-03-10 | 1995-04-06 | Luminis Pty Limited | Improved induction nozzle and arrangement |
| US5662470A (en) | 1995-03-31 | 1997-09-02 | Asm International N.V. | Vertical furnace |
| US5518549A (en) | 1995-04-18 | 1996-05-21 | Memc Electronic Materials, Inc. | Susceptor and baffle therefor |
| JP3360098B2 (ja) | 1995-04-20 | 2002-12-24 | 東京エレクトロン株式会社 | 処理装置のシャワーヘッド構造 |
| US5852879A (en) | 1995-04-26 | 1998-12-29 | Schumaier; Daniel R. | Moisture sensitive item drying appliance |
| SE506163C2 (sv) | 1995-04-27 | 1997-11-17 | Ericsson Telefon Ab L M | Anordning vid ett kiselsubstrat med ett urtag för upptagande av ett element jämte förfarande för framställande av en dylik anordning |
| US6088216A (en) | 1995-04-28 | 2000-07-11 | International Business Machines Corporation | Lead silicate based capacitor structures |
| US5661263A (en) | 1995-05-10 | 1997-08-26 | Phaeton, Llc | Surface raceway and method |
| JP3028462B2 (ja) | 1995-05-12 | 2000-04-04 | 東京エレクトロン株式会社 | 熱処理装置 |
| US5985032A (en) | 1995-05-17 | 1999-11-16 | Matsushita Electric Industrial Co., Ltd. | Semiconductor manufacturing apparatus |
| US5761328A (en) | 1995-05-22 | 1998-06-02 | Solberg Creations, Inc. | Computer automated system and method for converting source-documents bearing alphanumeric text relating to survey measurements |
| US5708825A (en) | 1995-05-26 | 1998-01-13 | Iconovex Corporation | Automatic summary page creation and hyperlink generation |
| US5698036A (en) | 1995-05-26 | 1997-12-16 | Tokyo Electron Limited | Plasma processing apparatus |
| US5540898A (en) | 1995-05-26 | 1996-07-30 | Vasogen Inc. | Ozone generator with in-line ozone sensor |
| US5663899A (en) | 1995-06-05 | 1997-09-02 | Advanced Micro Devices | Redundant thermocouple |
| US5982931A (en) | 1995-06-07 | 1999-11-09 | Ishimaru; Mikio | Apparatus and method for the manipulation of image containing documents |
| US5683517A (en) | 1995-06-07 | 1997-11-04 | Applied Materials, Inc. | Plasma reactor with programmable reactant gas distribution |
| US6190634B1 (en) | 1995-06-07 | 2001-02-20 | President And Fellows Of Harvard College | Carbide nanomaterials |
| JPH08335558A (ja) | 1995-06-08 | 1996-12-17 | Nissin Electric Co Ltd | 薄膜気相成長装置 |
| JP3380091B2 (ja) | 1995-06-09 | 2003-02-24 | 株式会社荏原製作所 | 反応ガス噴射ヘッド及び薄膜気相成長装置 |
| JP3700733B2 (ja) | 1995-06-12 | 2005-09-28 | 富士ゼロックス株式会社 | 文書管理装置及び文書管理方法 |
| US5685912A (en) | 1995-06-20 | 1997-11-11 | Sony Corporation | Pressure control system for semiconductor manufacturing equipment |
| USD392855S (en) | 1995-06-26 | 1998-03-31 | Pillow Daryl R | Floor protection template for use while spray-painting door frames |
| US20020114886A1 (en) | 1995-07-06 | 2002-08-22 | Applied Materials, Inc. | Method of tisin deposition using a chemical vapor deposition process |
| TW283250B (en) | 1995-07-10 | 1996-08-11 | Watkins Johnson Co | Plasma enhanced chemical processing reactor and method |
| TW294820B (en) | 1995-07-10 | 1997-01-01 | Watkins Johnson Co | Gas distribution apparatus |
| US5670786A (en) | 1995-07-18 | 1997-09-23 | Uvp, Inc. | Multiple wavelength light source |
| JPH0936198A (ja) | 1995-07-19 | 1997-02-07 | Hitachi Ltd | 真空処理装置およびそれを用いた半導体製造ライン |
| US6093252A (en) | 1995-08-03 | 2000-07-25 | Asm America, Inc. | Process chamber with inner support |
| DE19528746C1 (de) | 1995-08-04 | 1996-10-31 | Siemens Ag | Verfahren zum Erzeugen einer Siliziumdioxidschicht auf Oberflächenabschnitten einer Struktur |
| NO953217L (no) | 1995-08-16 | 1997-02-17 | Aker Eng As | Metode og innretning ved rörbunter |
| JPH0964149A (ja) | 1995-08-29 | 1997-03-07 | Hitachi Electron Eng Co Ltd | 半導体製造装置 |
| US6113702A (en) | 1995-09-01 | 2000-09-05 | Asm America, Inc. | Wafer support system |
| US6053982A (en) | 1995-09-01 | 2000-04-25 | Asm America, Inc. | Wafer support system |
| JP3504784B2 (ja) | 1995-09-07 | 2004-03-08 | 東京エレクトロン株式会社 | 熱処理方法 |
| TW371796B (en) | 1995-09-08 | 1999-10-11 | Semiconductor Energy Lab Co Ltd | Method and apparatus for manufacturing a semiconductor device |
| JPH0989676A (ja) | 1995-09-21 | 1997-04-04 | Casio Comput Co Ltd | 電子体温計 |
| US5791782A (en) | 1995-09-21 | 1998-08-11 | Fusion Systems Corporation | Contact temperature probe with unrestrained orientation |
| DE19535178C2 (de) | 1995-09-22 | 2001-07-19 | Jenoptik Jena Gmbh | Einrichtung zum Ver- und Entriegeln einer Tür eines Behälters |
| US5611448A (en) | 1995-09-25 | 1997-03-18 | United Microelectronics Corporation | Wafer container |
| US5997588A (en) | 1995-10-13 | 1999-12-07 | Advanced Semiconductor Materials America, Inc. | Semiconductor processing system with gas curtain |
| DE29517100U1 (de) | 1995-10-17 | 1997-02-13 | Zimmer, Johannes, Klagenfurt | Strömungsteilungs- und -umformungskörper |
| TW356554B (en) | 1995-10-23 | 1999-04-21 | Watkins Johnson Co | Gas injection system for semiconductor processing |
| US5801104A (en) | 1995-10-24 | 1998-09-01 | Micron Technology, Inc. | Uniform dielectric film deposition on textured surfaces |
| US6299404B1 (en) | 1995-10-27 | 2001-10-09 | Brooks Automation Inc. | Substrate transport apparatus with double substrate holders |
| KR100201386B1 (ko) | 1995-10-28 | 1999-06-15 | 구본준 | 화학기상증착장비의 반응가스 분사장치 |
| IL115931A0 (en) | 1995-11-09 | 1996-01-31 | Oramir Semiconductor Ltd | Laser stripping improvement by modified gas composition |
| JP3796782B2 (ja) | 1995-11-13 | 2006-07-12 | アシスト シンコー株式会社 | 機械的インターフェイス装置 |
| US5736314A (en) | 1995-11-16 | 1998-04-07 | Microfab Technologies, Inc. | Inline thermo-cycler |
| JPH09148322A (ja) | 1995-11-22 | 1997-06-06 | Sharp Corp | シリコン酸化膜の成膜方法及びプラズマｃｖｄ成膜装置 |
| US5796074A (en) | 1995-11-28 | 1998-08-18 | Applied Materials, Inc. | Wafer heater assembly |
| US5768125A (en) | 1995-12-08 | 1998-06-16 | Asm International N.V. | Apparatus for transferring a substantially circular article |
| US5584936A (en) | 1995-12-14 | 1996-12-17 | Cvd, Incorporated | Susceptor for semiconductor wafer processing |
| JPH09172055A (ja) | 1995-12-19 | 1997-06-30 | Fujitsu Ltd | 静電チャック及びウエハの吸着方法 |
| US5954375A (en) | 1995-12-21 | 1999-09-21 | Edstrom Industries, Inc. | Sanitary fitting having ferrule with grooved undercut |
| US5697706A (en) | 1995-12-26 | 1997-12-16 | Chrysler Corporation | Multi-point temperature probe |
| KR100267418B1 (ko) | 1995-12-28 | 2000-10-16 | 엔도 마코토 | 플라스마처리방법및플라스마처리장치 |
| US5679215A (en) | 1996-01-02 | 1997-10-21 | Lam Research Corporation | Method of in situ cleaning a vacuum plasma processing chamber |
| US5650351A (en) | 1996-01-11 | 1997-07-22 | Vanguard International Semiconductor Company | Method to form a capacitor having multiple pillars for advanced DRAMS |
| JPH09205130A (ja) | 1996-01-17 | 1997-08-05 | Applied Materials Inc | ウェハ支持装置 |
| US6017818A (en) | 1996-01-22 | 2000-01-25 | Texas Instruments Incorporated | Process for fabricating conformal Ti-Si-N and Ti-B-N based barrier films with low defect density |
| US5754390A (en) | 1996-01-23 | 1998-05-19 | Micron Technology, Inc. | Integrated capacitor bottom electrode for use with conformal dielectric |
| US5632919A (en) | 1996-01-25 | 1997-05-27 | T.G.M., Inc. | Temperature controlled insulation system |
| JPH09213772A (ja) | 1996-01-30 | 1997-08-15 | Dainippon Screen Mfg Co Ltd | 基板保持装置 |
| WO1997028669A1 (en) | 1996-01-31 | 1997-08-07 | Asm America, Inc. | Model-based predictive control of thermal processing |
| US5554557A (en) | 1996-02-02 | 1996-09-10 | Vanguard International Semiconductor Corp. | Method for fabricating a stacked capacitor with a self aligned node contact in a memory cell |
| US6054013A (en) | 1996-02-02 | 2000-04-25 | Applied Materials, Inc. | Parallel plate electrode plasma reactor having an inductive antenna and adjustable radial distribution of plasma ion density |
| JP3769802B2 (ja) | 1996-02-09 | 2006-04-26 | 株式会社日立製作所 | 半導体装置の製造方法 |
| US5732957A (en) | 1996-02-09 | 1998-03-31 | Yu; Chung-Hsiung | Roller skate with auxiliary roller for assisting turning and braking action thereof |
| US6030902A (en) | 1996-02-16 | 2000-02-29 | Micron Technology Inc | Apparatus and method for improving uniformity in batch processing of semiconductor wafers |
| SE9600705D0 (sv) | 1996-02-26 | 1996-02-26 | Abb Research Ltd | A susceptor for a device for epitaxially growing objects and such a device |
| US5837320A (en) | 1996-02-27 | 1998-11-17 | The University Of New Mexico | Chemical vapor deposition of metal sulfide films from metal thiocarboxylate complexes with monodenate or multidentate ligands |
| US5732744A (en) | 1996-03-08 | 1998-03-31 | Control Systems, Inc. | Method and apparatus for aligning and supporting semiconductor process gas delivery and regulation components |
| US5656093A (en) | 1996-03-08 | 1997-08-12 | Applied Materials, Inc. | Wafer spacing mask for a substrate support chuck and method of fabricating same |
| DE19609678C2 (de) | 1996-03-12 | 2003-04-17 | Infineon Technologies Ag | Speicherzellenanordnung mit streifenförmigen, parallel verlaufenden Gräben und vertikalen MOS-Transistoren und Verfahren zu deren Herstellung |
| USD411516S (en) | 1996-03-15 | 1999-06-29 | Tokyo Electron Limited | Gas diffusion plate for electrode of semiconductor wafer processing apparatus |
| US5732597A (en) | 1996-03-19 | 1998-03-31 | Hughes Electronics | Pre-loaded self-aligning roller nut assembly for standard micrometer spindle and the like |
| USD380527S (en) | 1996-03-19 | 1997-07-01 | Cherle Velez | Sink drain shield |
| US5653807A (en) | 1996-03-28 | 1997-08-05 | The United States Of America As Represented By The Secretary Of The Air Force | Low temperature vapor phase epitaxial system for depositing thin layers of silicon-germanium alloy |
| US5851293A (en) | 1996-03-29 | 1998-12-22 | Atmi Ecosys Corporation | Flow-stabilized wet scrubber system for treatment of process gases from semiconductor manufacturing operations |
| US6106678A (en) | 1996-03-29 | 2000-08-22 | Lam Research Corporation | Method of high density plasma CVD gap-filling |
| US5667592A (en) | 1996-04-16 | 1997-09-16 | Gasonics International | Process chamber sleeve with ring seals for isolating individual process modules in a common cluster |
| KR100212132B1 (ko) | 1996-04-24 | 1999-08-02 | 윤종용 | 횡형 확산로의 프로파일 열전대 |
| US5819434A (en) | 1996-04-25 | 1998-10-13 | Applied Materials, Inc. | Etch enhancement using an improved gas distribution plate |
| US6440221B2 (en) | 1996-05-13 | 2002-08-27 | Applied Materials, Inc. | Process chamber having improved temperature control |
| USD386076S (en) | 1996-05-14 | 1997-11-11 | Camco Manufacturing, Inc. | Awning clamp |
| US5844683A (en) | 1996-05-22 | 1998-12-01 | Applied Materials, Inc. | Position sensor system for substrate holders |
| US5920798A (en) | 1996-05-28 | 1999-07-06 | Matsushita Battery Industrial Co., Ltd. | Method of preparing a semiconductor layer for an optical transforming device |
| US6001183A (en) | 1996-06-10 | 1999-12-14 | Emcore Corporation | Wafer carriers for epitaxial growth processes |
| US6534133B1 (en) | 1996-06-14 | 2003-03-18 | Research Foundation Of State University Of New York | Methodology for in-situ doping of aluminum coatings |
| US6342277B1 (en) | 1996-08-16 | 2002-01-29 | Licensee For Microelectronics: Asm America, Inc. | Sequential chemical vapor deposition |
| US5801945A (en) | 1996-06-28 | 1998-09-01 | Lam Research Corporation | Scheduling method for robotic manufacturing processes |
| US5779203A (en) | 1996-06-28 | 1998-07-14 | Edlinger; Erich | Adjustable wafer cassette stand |
| US5950327A (en) | 1996-07-08 | 1999-09-14 | Speedfam-Ipec Corporation | Methods and apparatus for cleaning and drying wafers |
| US6183565B1 (en) | 1997-07-08 | 2001-02-06 | Asm International N.V | Method and apparatus for supporting a semiconductor wafer during processing |
| US5820366A (en) | 1996-07-10 | 1998-10-13 | Eaton Corporation | Dual vertical thermal processing furnace |
| US5937142A (en) | 1996-07-11 | 1999-08-10 | Cvc Products, Inc. | Multi-zone illuminator for rapid thermal processing |
| US5993916A (en) | 1996-07-12 | 1999-11-30 | Applied Materials, Inc. | Method for substrate processing with improved throughput and yield |
| US5837058A (en) | 1996-07-12 | 1998-11-17 | Applied Materials, Inc. | High temperature susceptor |
| US5846332A (en) | 1996-07-12 | 1998-12-08 | Applied Materials, Inc. | Thermally floating pedestal collar in a chemical vapor deposition chamber |
| US5915562A (en) | 1996-07-12 | 1999-06-29 | Fluoroware, Inc. | Transport module with latching door |
| EP0818671A3 (en) | 1996-07-12 | 1998-07-08 | Isuzu Ceramics Research Institute Co., Ltd. | A ceramic sheath type thermocouple |
| US5700729A (en) | 1996-07-15 | 1997-12-23 | Taiwan Semiconductor Manufacturing Company, Ltd. | Masked-gate MOS S/D implantation |
| US5827757A (en) | 1996-07-16 | 1998-10-27 | Direct Radiography Corp. | Fabrication of large area x-ray image capturing element |
| JP3122617B2 (ja) | 1996-07-19 | 2001-01-09 | 東京エレクトロン株式会社 | プラズマ処理装置 |
| EP0821395A3 (en) | 1996-07-19 | 1998-03-25 | Tokyo Electron Limited | Plasma processing apparatus |
| US5879128A (en) | 1996-07-24 | 1999-03-09 | Applied Materials, Inc. | Lift pin and support pin apparatus for a processing chamber |
| US5724748A (en) | 1996-07-24 | 1998-03-10 | Brooks; Ray G. | Apparatus for packaging contaminant-sensitive articles and resulting package |
| US5781693A (en) | 1996-07-24 | 1998-07-14 | Applied Materials, Inc. | Gas introduction showerhead for an RTP chamber with upper and lower transparent plates and gas flow therebetween |
| US5987480A (en) | 1996-07-25 | 1999-11-16 | Donohue; Michael | Method and system for delivering documents customized for a particular user over the internet using imbedded dynamic content |
| JPH1050635A (ja) | 1996-07-29 | 1998-02-20 | Kokusai Electric Co Ltd | 金属薄膜の生成方法及びｃｖｄ装置 |
| JPH1050800A (ja) | 1996-08-05 | 1998-02-20 | Canon Sales Co Inc | 処理装置 |
| US5891251A (en) | 1996-08-07 | 1999-04-06 | Macleish; Joseph H. | CVD reactor having heated process chamber within isolation chamber |
| KR0183912B1 (ko) | 1996-08-08 | 1999-05-01 | 김광호 | 다중 반응 챔버에 연결된 펌핑 설비 및 이를 사용하는 방법 |
| US5928426A (en) | 1996-08-08 | 1999-07-27 | Novellus Systems, Inc. | Method and apparatus for treating exhaust gases from CVD, PECVD or plasma etch reactors |
| US5916365A (en) | 1996-08-16 | 1999-06-29 | Sherman; Arthur | Sequential chemical vapor deposition |
| JP3122618B2 (ja) | 1996-08-23 | 2001-01-09 | 東京エレクトロン株式会社 | プラズマ処理装置 |
| TW344847B (en) | 1996-08-29 | 1998-11-11 | Tokyo Electron Co Ltd | Substrate treatment system, substrate transfer system, and substrate transfer method |
| US5806980A (en) | 1996-09-11 | 1998-09-15 | Novellus Systems, Inc. | Methods and apparatus for measuring temperatures at high potential |
| US5857777A (en) | 1996-09-25 | 1999-01-12 | Claud S. Gordon Company | Smart temperature sensing device |
| US5880980A (en) | 1996-09-30 | 1999-03-09 | Rockwell International Corporation | Distributed decimation sample rate conversion |
| US6048154A (en) | 1996-10-02 | 2000-04-11 | Applied Materials, Inc. | High vacuum dual stage load lock and method for loading and unloading wafers using a high vacuum dual stage load lock |
| USD403949S (en) | 1996-10-03 | 1999-01-12 | Shinagawa Shoko Co., Ltd. | Insulating bushing |
| KR19980026850A (ko) | 1996-10-11 | 1998-07-15 | 김광호 | 웨이퍼의 휨을 검사하는 기능을 갖는 급속 열처리 장비 |
| KR100492258B1 (ko) | 1996-10-11 | 2005-09-02 | 가부시키가이샤 에바라 세이사꾸쇼 | 반응가스분출헤드 |
| US6071572A (en) | 1996-10-15 | 2000-06-06 | Applied Materials, Inc. | Forming tin thin films using remote activated specie generation |
| US5818716A (en) | 1996-10-18 | 1998-10-06 | Taiwan Semiconductor Manufacturing Company Ltd. | Dynamic lot dispatching required turn rate factory control system and method of operation thereof |
| US5928389A (en) | 1996-10-21 | 1999-07-27 | Applied Materials, Inc. | Method and apparatus for priority based scheduling of wafer processing within a multiple chamber semiconductor wafer processing tool |
| JP2983476B2 (ja) | 1996-10-30 | 1999-11-29 | キヤノン販売株式会社 | 成膜方法及び半導体装置の製造方法 |
| US6073973A (en) | 1996-10-31 | 2000-06-13 | Stanley Aviation Corporation | Lightweight positive lock coupling |
| US6444037B1 (en) | 1996-11-13 | 2002-09-03 | Applied Materials, Inc. | Chamber liner for high temperature processing chamber |
| US6347636B1 (en) | 1996-11-13 | 2002-02-19 | Applied Materials, Inc. | Methods and apparatus for gettering fluorine from chamber material surfaces |
| US6152070A (en) | 1996-11-18 | 2000-11-28 | Applied Materials, Inc. | Tandem process chamber |
| US5855681A (en) | 1996-11-18 | 1999-01-05 | Applied Materials, Inc. | Ultra high throughput wafer vacuum processing system |
| US6126744A (en) | 1996-11-18 | 2000-10-03 | Asm America, Inc. | Method and system for adjusting semiconductor processing equipment |
| JP3740587B2 (ja) | 1996-11-25 | 2006-02-01 | 山里産業株式会社 | 熱電対 |
| DE19648744A1 (de) | 1996-11-25 | 1998-05-28 | Basf Ag | Verfahren zur Herstellung einer Polymerdispersion durch radikalische wäßrige Emulsionspolymerisation mit einer kontinuierlich hergestellten wäßrigen Monomerenemulsion |
| JPH10154712A (ja) | 1996-11-25 | 1998-06-09 | Fujitsu Ltd | 半導体装置の製造方法 |
| JP3901265B2 (ja) | 1996-11-26 | 2007-04-04 | 大陽日酸株式会社 | 薄板状基体の搬送方法及び搬送装置 |
| CN1186873A (zh) | 1996-11-26 | 1998-07-08 | 西门子公司 | 带多个气体入口和独立质流控制回路的反应室的分布板 |
| US5836483A (en) | 1997-02-05 | 1998-11-17 | Aerotech Dental Systems, Inc. | Self-regulating fluid dispensing cap with safety pressure relief valve for dental/medical unit fluid bottles |
| JPH1160735A (ja) | 1996-12-09 | 1999-03-05 | Toshiba Corp | ポリシランおよびパターン形成方法 |
| US5753835A (en) | 1996-12-12 | 1998-05-19 | Caterpillar Inc. | Receptacle for holding a sensing device |
| US6367410B1 (en) | 1996-12-16 | 2002-04-09 | Applied Materials, Inc. | Closed-loop dome thermal control apparatus for a semiconductor wafer processing system |
| US5953635A (en) | 1996-12-19 | 1999-09-14 | Intel Corporation | Interlayer dielectric with a composite dielectric stack |
| US6066204A (en) | 1997-01-08 | 2000-05-23 | Bandwidth Semiconductor, Llc | High pressure MOCVD reactor system |
| US6189482B1 (en) | 1997-02-12 | 2001-02-20 | Applied Materials, Inc. | High temperature, high flow rate chemical vapor deposition apparatus and related methods |
| NL1005102C2 (nl) | 1997-01-27 | 1998-07-29 | Advanced Semiconductor Mat | Inrichting voor het behandelen van halfgeleiderschijven. |
| US5984391A (en) | 1997-02-03 | 1999-11-16 | Novellus Systems, Inc. | Microfeature wafer handling apparatus and methods |
| US5893741A (en) | 1997-02-07 | 1999-04-13 | National Science Council | Method for simultaneously forming local interconnect with silicided elevated source/drain MOSFET's |
| JP3336897B2 (ja) | 1997-02-07 | 2002-10-21 | 三菱住友シリコン株式会社 | 気相成長装置用サセプター |
| US20020174106A1 (en) | 1997-02-10 | 2002-11-21 | Actioneer, Inc. | Method and apparatus for receiving information in response to a request |
| US6035101A (en) | 1997-02-12 | 2000-03-07 | Applied Materials, Inc. | High temperature multi-layered alloy heater assembly and related methods |
| JP3492135B2 (ja) | 1997-02-13 | 2004-02-03 | 三菱重工業株式会社 | 熱流束計 |
| US6127249A (en) | 1997-02-20 | 2000-10-03 | Micron Technology, Inc. | Metal silicidation methods and methods for using same |
| US6447937B1 (en) | 1997-02-26 | 2002-09-10 | Kyocera Corporation | Ceramic materials resistant to halogen plasma and components using the same |
| US6461982B2 (en) | 1997-02-27 | 2002-10-08 | Micron Technology, Inc. | Methods for forming a dielectric film |
| JPH10239165A (ja) | 1997-02-27 | 1998-09-11 | Sony Corp | 基板の温度測定器、基板の温度を測定する方法および基板の加熱方法 |
| WO1998038508A1 (en) | 1997-02-28 | 1998-09-03 | Extraction Systems, Inc. | System for detecting amine and other basic molecular contamination in a gas |
| US6096267A (en) | 1997-02-28 | 2000-08-01 | Extraction Systems, Inc. | System for detecting base contaminants in air |
| NL1005410C2 (nl) | 1997-02-28 | 1998-08-31 | Advanced Semiconductor Mat | Stelsel voor het laden, behandelen en ontladen van op een drager aangebrachte substraten. |
| US5879459A (en) | 1997-08-29 | 1999-03-09 | Genus, Inc. | Vertically-stacked process reactor and cluster tool system for atomic layer deposition |
| US6174377B1 (en) | 1997-03-03 | 2001-01-16 | Genus, Inc. | Processing chamber for atomic layer deposition processes |
| US5947718A (en) | 1997-03-07 | 1999-09-07 | Semitool, Inc. | Semiconductor processing furnace |
| US6213708B1 (en) | 1997-03-12 | 2001-04-10 | Advanced Micro Devices, Inc. | System for sorting multiple semiconductor wafers |
| JP3124506B2 (ja) | 1997-03-14 | 2001-01-15 | 白光株式会社 | ヒータ・センサ複合体 |
| NL1005541C2 (nl) | 1997-03-14 | 1998-09-18 | Advanced Semiconductor Mat | Werkwijze voor het koelen van een oven alsmede oven voorzien van een koelinrichting. |
| US5866795A (en) | 1997-03-17 | 1999-02-02 | Applied Materials, Inc. | Liquid flow rate estimation and verification by direct liquid measurement |
| US6214122B1 (en) | 1997-03-17 | 2001-04-10 | Motorola, Inc. | Rapid thermal processing susceptor |
| US6287988B1 (en) | 1997-03-18 | 2001-09-11 | Kabushiki Kaisha Toshiba | Semiconductor device manufacturing method, semiconductor device manufacturing apparatus and semiconductor device |
| JPH10261620A (ja) | 1997-03-19 | 1998-09-29 | Hitachi Ltd | 表面処理装置 |
| US6217662B1 (en) | 1997-03-24 | 2001-04-17 | Cree, Inc. | Susceptor designs for silicon carbide thin films |
| NL1005625C2 (nl) | 1997-03-25 | 1998-10-01 | Asm Int | Stelsel voor het overbrengen van wafers uit cassettes naar ovens alsmede werkwijze. |
| US6387827B1 (en) | 1997-03-28 | 2002-05-14 | Imec (Vzw) | Method for growing thin silicon oxides on a silicon substrate using chlorine precursors |
| US5872065A (en) | 1997-04-02 | 1999-02-16 | Applied Materials Inc. | Method for depositing low K SI-O-F films using SIF4 /oxygen chemistry |
| US6891138B2 (en) | 1997-04-04 | 2005-05-10 | Robert C. Dalton | Electromagnetic susceptors with coatings for artificial dielectric systems and devices |
| NL1005802C2 (nl) | 1997-04-11 | 1998-10-14 | Asm Int | Afvoersysteem voor een reactor alsmede processtelsel voorzien van een dergelijk afvoersysteem. |
| US6090442A (en) | 1997-04-14 | 2000-07-18 | University Technology Corporation | Method of growing films on substrates at room temperatures using catalyzed binary reaction sequence chemistry |
| US5865205A (en) | 1997-04-17 | 1999-02-02 | Applied Materials, Inc. | Dynamic gas flow controller |
| JP3752578B2 (ja) | 1997-04-21 | 2006-03-08 | 株式会社フジキン | 流体制御器用加熱装置 |
| US6029602A (en) | 1997-04-22 | 2000-02-29 | Applied Materials, Inc. | Apparatus and method for efficient and compact remote microwave plasma generation |
| US6026762A (en) | 1997-04-23 | 2000-02-22 | Applied Materials, Inc. | Apparatus for improved remote microwave plasma source for use with substrate processing systems |
| US6190113B1 (en) | 1997-04-30 | 2001-02-20 | Applied Materials, Inc. | Quartz pin lift for single wafer chemical vapor deposition/etch process chamber |
| JP3967424B2 (ja) | 1997-04-30 | 2007-08-29 | 東京エレクトロン株式会社 | 真空処理装置及び圧力調整方法 |
| NL1005963C2 (nl) | 1997-05-02 | 1998-11-09 | Asm Int | Verticale oven voor het behandelen van halfgeleidersubstraten. |
| US6053983A (en) | 1997-05-08 | 2000-04-25 | Tokyo Electron, Ltd. | Wafer for carrying semiconductor wafers and method detecting wafers on carrier |
| US5904170A (en) | 1997-05-14 | 1999-05-18 | Applied Materials, Inc. | Pressure flow and concentration control of oxygen/ozone gas mixtures |
| JP3230051B2 (ja) | 1997-05-16 | 2001-11-19 | 東京エレクトロン株式会社 | 乾燥処理方法及びその装置 |
| US6390754B2 (en) | 1997-05-21 | 2002-05-21 | Tokyo Electron Limited | Wafer processing apparatus, method of operating the same and wafer detecting system |
| JPH1144799A (ja) | 1997-05-27 | 1999-02-16 | Ushio Inc | 光路分割型紫外線照射装置 |
| US5937323A (en) | 1997-06-03 | 1999-08-10 | Applied Materials, Inc. | Sequencing of the recipe steps for the optimal low-k HDP-CVD processing |
| US6201999B1 (en) | 1997-06-09 | 2001-03-13 | Applied Materials, Inc. | Method and apparatus for automatically generating schedules for wafer processing within a multichamber semiconductor wafer processing tool |
| US6104401A (en) | 1997-06-12 | 2000-08-15 | Netscape Communications Corporation | Link filters |
| EP0887632A1 (en) | 1997-06-24 | 1998-12-30 | Isuzu Ceramics Research Institute Co., Ltd. | A ceramic thermocouple for measuring temperature of molten metal |
| US5968275A (en) | 1997-06-25 | 1999-10-19 | Lam Research Corporation | Methods and apparatus for passivating a substrate in a plasma reactor |
| US5759281A (en) | 1997-06-30 | 1998-06-02 | Emcore Corporation | CVD reactor for uniform heating with radiant heating filaments |
| JP3957818B2 (ja) | 1997-07-02 | 2007-08-15 | 富士通株式会社 | ライブラリ装置用カートリッジ移送ロボット |
| NL1006461C2 (nl) | 1997-07-03 | 1999-01-05 | Asm Int | Opslagsamenstel voor wafers. |
| FI972874A0 (fi) | 1997-07-04 | 1997-07-04 | Mikrokemia Oy | Foerfarande och anordning foer framstaellning av tunnfilmer |
| US6531193B2 (en) | 1997-07-07 | 2003-03-11 | The Penn State Research Foundation | Low temperature, high quality silicon dioxide thin films deposited using tetramethylsilane (TMS) for stress control and coverage applications |
| US6576064B2 (en) | 1997-07-10 | 2003-06-10 | Sandia Corporation | Support apparatus for semiconductor wafer processing |
| US6083321A (en) | 1997-07-11 | 2000-07-04 | Applied Materials, Inc. | Fluid delivery system and method |
| US6024799A (en) | 1997-07-11 | 2000-02-15 | Applied Materials, Inc. | Chemical vapor deposition manifold |
| US6312525B1 (en) | 1997-07-11 | 2001-11-06 | Applied Materials, Inc. | Modular architecture for semiconductor wafer fabrication equipment |
| US5975492A (en) | 1997-07-14 | 1999-11-02 | Brenes; Arthur | Bellows driver slot valve |
| JP3362113B2 (ja) | 1997-07-15 | 2003-01-07 | 日本碍子株式会社 | 耐蝕性部材、ウエハー設置部材および耐蝕性部材の製造方法 |
| US6176929B1 (en) | 1997-07-22 | 2001-01-23 | Ebara Corporation | Thin-film deposition apparatus |
| US6099596A (en) | 1997-07-23 | 2000-08-08 | Applied Materials, Inc. | Wafer out-of-pocket detection tool |
| US6013553A (en) | 1997-07-24 | 2000-01-11 | Texas Instruments Incorporated | Zirconium and/or hafnium oxynitride gate dielectric |
| KR100385946B1 (ko) | 1999-12-08 | 2003-06-02 | 삼성전자주식회사 | 원자층 증착법을 이용한 금속층 형성방법 및 그 금속층을장벽금속층, 커패시터의 상부전극, 또는 하부전극으로구비한 반도체 소자 |
| US6287965B1 (en) | 1997-07-28 | 2001-09-11 | Samsung Electronics Co, Ltd. | Method of forming metal layer using atomic layer deposition and semiconductor device having the metal layer as barrier metal layer or upper or lower electrode of capacitor |
| US5827420A (en) | 1997-07-29 | 1998-10-27 | World Precision Instruments, Inc. | Method and apparatus for the generation of nitric oxide |
| US6135460A (en) | 1997-07-31 | 2000-10-24 | Texas Instruments Incorporated | Method of and apparatus for purifying reduced pressure process chambers |
| US5884640A (en) | 1997-08-07 | 1999-03-23 | Applied Materials, Inc. | Method and apparatus for drying substrates |
| US7393561B2 (en) | 1997-08-11 | 2008-07-01 | Applied Materials, Inc. | Method and apparatus for layer by layer deposition of thin films |
| US20030049372A1 (en) | 1997-08-11 | 2003-03-13 | Cook Robert C. | High rate deposition at low pressures in a small batch reactor |
| US6321680B2 (en) | 1997-08-11 | 2001-11-27 | Torrex Equipment Corporation | Vertical plasma enhanced process apparatus and method |
| JP3317209B2 (ja) | 1997-08-12 | 2002-08-26 | 東京エレクトロンエイ・ティー株式会社 | プラズマ処理装置及びプラズマ処理方法 |
| JP3425592B2 (ja) | 1997-08-12 | 2003-07-14 | 東京エレクトロン株式会社 | 処理装置 |
| US6121158A (en) | 1997-08-13 | 2000-09-19 | Sony Corporation | Method for hardening a photoresist material formed on a substrate |
| US6090212A (en) | 1997-08-15 | 2000-07-18 | Micro C Technologies, Inc. | Substrate platform for a semiconductor substrate during rapid high temperature processing and method of supporting a substrate |
| US6530994B1 (en) | 1997-08-15 | 2003-03-11 | Micro C Technologies, Inc. | Platform for supporting a semiconductor substrate and method of supporting a substrate during rapid high temperature processing |
| WO1999008805A1 (en) | 1997-08-20 | 1999-02-25 | Air Liquide Electronics Chemicals & Services, Inc. | Plasma cleaning and etching methods using non-global-warming compounds |
| USD404370S (en) | 1997-08-20 | 1999-01-19 | Tokyo Electron Limited | Cap for use in a semiconductor wafer heat processing apparatus |
| USD404372S (en) | 1997-08-20 | 1999-01-19 | Tokyo Electron Limited | Ring for use in a semiconductor wafer heat processing apparatus |
| KR100253664B1 (ko) | 1997-08-22 | 2000-04-15 | 이해광 | 폴리이미드 건조기의 작동 시스템 |
| US6104011A (en) | 1997-09-04 | 2000-08-15 | Watlow Electric Manufacturing Company | Sheathed thermocouple with internal coiled wires |
| AUPO904597A0 (en) | 1997-09-08 | 1997-10-02 | Canon Information Systems Research Australia Pty Ltd | Method for non-linear document conversion and printing |
| US6027163A (en) | 1997-09-10 | 2000-02-22 | Graco Children's Products Inc. | Juvenile carrier with moveable canopy |
| US6258170B1 (en) | 1997-09-11 | 2001-07-10 | Applied Materials, Inc. | Vaporization and deposition apparatus |
| JP3581537B2 (ja) | 1997-09-24 | 2004-10-27 | 三菱重工業株式会社 | 高周波加熱コイルの設置間隙保持装置 |
| US6348376B2 (en) | 1997-09-29 | 2002-02-19 | Samsung Electronics Co., Ltd. | Method of forming metal nitride film by chemical vapor deposition and method of forming metal contact and capacitor of semiconductor device using the same |
| US6161500A (en) | 1997-09-30 | 2000-12-19 | Tokyo Electron Limited | Apparatus and method for preventing the premature mixture of reactant gases in CVD and PECVD reactions |
| AU1269499A (en) | 1997-10-07 | 1999-04-27 | Electronics Development Corporation | Transducer assembly with smart connector |
| JPH11118615A (ja) | 1997-10-09 | 1999-04-30 | Kakunenryo Cycle Kaihatsu Kiko | 伸縮性を有する被測定物用温度センサ |
| US6624064B1 (en) | 1997-10-10 | 2003-09-23 | Applied Materials, Inc. | Chamber seasoning method to improve adhesion of F-containing dielectric film to metal for VLSI application |
| US5908672A (en) | 1997-10-15 | 1999-06-01 | Applied Materials, Inc. | Method and apparatus for depositing a planarized passivation layer |
| WO1999023690A1 (en) | 1997-11-03 | 1999-05-14 | Asm America, Inc. | Method of processing wafers with low mass support |
| EP1036406B1 (en) | 1997-11-03 | 2003-04-02 | ASM America, Inc. | Improved low mass wafer support system |
| KR20010031714A (ko) | 1997-11-03 | 2001-04-16 | 러셀 엔. 페어뱅크스, 쥬니어 | 수명이 긴 고온 공정 챔버 |
| US6164894A (en) | 1997-11-04 | 2000-12-26 | Cheng; David | Method and apparatus for integrated wafer handling and testing |
| JPH11140648A (ja) | 1997-11-07 | 1999-05-25 | Tokyo Electron Ltd | プロセスチャンバ装置及び処理装置 |
| JP3050193B2 (ja) | 1997-11-12 | 2000-06-12 | 日本電気株式会社 | 半導体装置及びその製造方法 |
| US6136211A (en) | 1997-11-12 | 2000-10-24 | Applied Materials, Inc. | Self-cleaning etch process |
| GB9724168D0 (en) | 1997-11-14 | 1998-01-14 | Air Prod & Chem | Gas control device and method of supplying gas |
| US6068441A (en) | 1997-11-21 | 2000-05-30 | Asm America, Inc. | Substrate transfer system for semiconductor processing equipment |
| US6574644B2 (en) | 1997-11-26 | 2003-06-03 | Siemens Corporate Research, Inc | Automatic capturing of hyperlink specifications for multimedia documents |
| WO1999028952A2 (en) | 1997-11-28 | 1999-06-10 | Fortrend Engineering Corporation | Wafer-mapping load port interface |
| JP2002504744A (ja) | 1997-11-28 | 2002-02-12 | マットソン テクノロジイ インコーポレイテッド | 真空処理を行う非加工物を、低汚染かつ高処理能力で取扱うためのシステムおよび方法 |
| US6106625A (en) | 1997-12-02 | 2000-08-22 | Applied Materials, Inc. | Reactor useful for chemical vapor deposition of titanium nitride |
| US6079356A (en) | 1997-12-02 | 2000-06-27 | Applied Materials, Inc. | Reactor optimized for chemical vapor deposition of titanium |
| US6432479B2 (en) | 1997-12-02 | 2002-08-13 | Applied Materials, Inc. | Method for in-situ, post deposition surface passivation of a chemical vapor deposited film |
| KR100295043B1 (ko) | 1997-12-03 | 2001-10-19 | 윤종용 | 저유전상수절연막을층간절연막으로사용하는반도체장치의금속막형성방법 |
| US6248168B1 (en) | 1997-12-15 | 2001-06-19 | Tokyo Electron Limited | Spin coating apparatus including aging unit and solvent replacement unit |
| JPH11319545A (ja) | 1997-12-15 | 1999-11-24 | Canon Inc | プラズマ処理方法及び基体の処理方法 |
| JPH11183264A (ja) | 1997-12-16 | 1999-07-09 | Tokyo Yogyo Co Ltd | 熱電対をもつ温度測定器 |
| JPH11183265A (ja) | 1997-12-16 | 1999-07-09 | Tokyo Yogyo Co Ltd | 熱電対をもつ温度測定器 |
| JP3283459B2 (ja) | 1997-12-17 | 2002-05-20 | 日本エー・エス・エム株式会社 | 半導体処理用の基板保持装置 |
| EP0926731A1 (en) | 1997-12-18 | 1999-06-30 | STMicroelectronics S.r.l. | Process for the final passivation of intergrated circuits |
| US5897379A (en) | 1997-12-19 | 1999-04-27 | Sharp Microelectronics Technology, Inc. | Low temperature system and method for CVD copper removal |
| US6093611A (en) | 1997-12-19 | 2000-07-25 | Advanced Micro Devices, Inc. | Oxide liner for high reliability with reduced encroachment of the source/drain region |
| US6099649A (en) | 1997-12-23 | 2000-08-08 | Applied Materials, Inc. | Chemical vapor deposition hot-trap for unreacted precursor conversion and effluent removal |
| JPH11195688A (ja) | 1997-12-26 | 1999-07-21 | Mc Electronics Kk | 基板処理装置 |
| KR100273261B1 (ko) | 1997-12-26 | 2000-12-15 | 김영환 | 반도체 화학기상증착장비의 가스혼합장치 |
| KR100249391B1 (ko) | 1997-12-30 | 2000-03-15 | 김영환 | 가열장치 |
| USD409894S (en) | 1997-12-30 | 1999-05-18 | Mcclurg Ben B | Sheet rock plug |
| EP0932194A1 (en) | 1997-12-30 | 1999-07-28 | International Business Machines Corporation | Method and system for semiconductor wafer fabrication process real-time in-situ interactive supervision |
| KR100269328B1 (ko) | 1997-12-31 | 2000-10-16 | 윤종용 | 원자층 증착 공정을 이용하는 도전층 형성방법 |
| JP3314151B2 (ja) | 1998-01-05 | 2002-08-12 | 株式会社日立国際電気 | プラズマｃｖｄ装置及び半導体装置の製造方法 |
| KR100275727B1 (ko) | 1998-01-06 | 2001-01-15 | 윤종용 | 반도체 장치의 커패시터 형성방법 |
| WO1999036336A1 (en) | 1998-01-16 | 1999-07-22 | Pri Automation, Inc. | Semiconductor wafer cassette positioning and detection mechanism |
| JPH11274067A (ja) | 1998-01-21 | 1999-10-08 | Mitsubishi Electric Corp | Ｘ線マスクの応力調整方法 |
| NL1008143C2 (nl) | 1998-01-27 | 1999-07-28 | Asm Int | Stelsel voor het behandelen van wafers. |
| US6091062A (en) | 1998-01-27 | 2000-07-18 | Kinetrix, Inc. | Method and apparatus for temperature control of a semiconductor electrical-test contractor assembly |
| US6039809A (en) | 1998-01-27 | 2000-03-21 | Mitsubishi Materials Silicon Corporation | Method and apparatus for feeding a gas for epitaxial growth |
| US6125789A (en) | 1998-01-30 | 2000-10-03 | Applied Materials, Inc. | Increasing the sensitivity of an in-situ particle monitor |
| TWI237305B (en) | 1998-02-04 | 2005-08-01 | Nikon Corp | Exposure apparatus and positioning apparatus of substrate receiving cassette |
| US7354873B2 (en) | 1998-02-05 | 2008-04-08 | Asm Japan K.K. | Method for forming insulation film |
| US7582575B2 (en) | 1998-02-05 | 2009-09-01 | Asm Japan K.K. | Method for forming insulation film |
| US6383955B1 (en) | 1998-02-05 | 2002-05-07 | Asm Japan K.K. | Silicone polymer insulation film on semiconductor substrate and method for forming the film |
| TW437017B (en) | 1998-02-05 | 2001-05-28 | Asm Japan Kk | Silicone polymer insulation film on semiconductor substrate and method for formation thereof |
| US6352049B1 (en) | 1998-02-09 | 2002-03-05 | Applied Materials, Inc. | Plasma assisted processing chamber with separate control of species density |
| US6635578B1 (en) | 1998-02-09 | 2003-10-21 | Applied Materials, Inc | Method of operating a dual chamber reactor with neutral density decoupled from ion density |
| US6074514A (en) | 1998-02-09 | 2000-06-13 | Applied Materials, Inc. | High selectivity etch using an external plasma discharge |
| US6413583B1 (en) | 1998-02-11 | 2002-07-02 | Applied Materials, Inc. | Formation of a liquid-like silica layer by reaction of an organosilicon compound and a hydroxyl forming compound |
| US6303523B2 (en) | 1998-02-11 | 2001-10-16 | Applied Materials, Inc. | Plasma processes for depositing low dielectric constant films |
| US6050506A (en) | 1998-02-13 | 2000-04-18 | Applied Materials, Inc. | Pattern of apertures in a showerhead for chemical vapor deposition |
| JPH11238688A (ja) | 1998-02-23 | 1999-08-31 | Shin Etsu Handotai Co Ltd | 薄膜の製造方法 |
| US6072163A (en) | 1998-03-05 | 2000-06-06 | Fsi International Inc. | Combination bake/chill apparatus incorporating low thermal mass, thermally conductive bakeplate |
| US5897348A (en) | 1998-03-13 | 1999-04-27 | Texas Instruments - Acer Incorporated | Low mask count self-aligned silicided CMOS transistors with a high electrostatic discharge resistance |
| US7181501B2 (en) | 1998-03-19 | 2007-02-20 | Isochron, Inc. | Remote data acquisition, transmission and analysis system including handheld wireless equipment |
| WO1999049705A1 (fr) | 1998-03-20 | 1999-09-30 | Tokyo Electron Limited | Dispositif de traitement plasmique |
| JP3656701B2 (ja) | 1998-03-23 | 2005-06-08 | 東京エレクトロン株式会社 | 処理装置 |
| NL1008749C2 (nl) | 1998-03-30 | 1999-10-05 | Asm Int | Werkwijze voor het chemisch behandelen van een halfgeleidersubstraat. |
| JP3554219B2 (ja) | 1998-03-31 | 2004-08-18 | キヤノン株式会社 | 排気装置と排気方法、および堆積膜形成装置と堆積膜形成方法 |
| JPH11287715A (ja) | 1998-04-02 | 1999-10-19 | Canon Inc | 熱電対 |
| SE9801190D0 (sv) | 1998-04-06 | 1998-04-06 | Abb Research Ltd | A method and a device for epitaxial growth of objects by Chemical Vapour Deposition |
| US6015465A (en) | 1998-04-08 | 2000-01-18 | Applied Materials, Inc. | Temperature control system for semiconductor process chamber |
| US6296711B1 (en) | 1998-04-14 | 2001-10-02 | Cvd Systems, Inc. | Film processing system |
| KR100265287B1 (ko) | 1998-04-21 | 2000-10-02 | 윤종용 | 반도체소자 제조용 식각설비의 멀티챔버 시스템 |
| US6079927A (en) | 1998-04-22 | 2000-06-27 | Varian Semiconductor Equipment Associates, Inc. | Automated wafer buffer for use with wafer processing equipment |
| KR100376983B1 (ko) | 1998-04-30 | 2003-08-02 | 주식회사 하이닉스반도체 | 포토레지스트중합체및이를이용한미세패턴의형성방법 |
| KR100376984B1 (ko) | 1998-04-30 | 2003-07-16 | 주식회사 하이닉스반도체 | 포토레지스트중합체및이를이용한미세패턴의형성방법 |
| US6126848A (en) | 1998-05-06 | 2000-10-03 | International Business Machines Corporation | Indirect endpoint detection by chemical reaction and chemiluminescence |
| US6287435B1 (en) | 1998-05-06 | 2001-09-11 | Tokyo Electron Limited | Method and apparatus for ionized physical vapor deposition |
| US6060721A (en) | 1998-05-06 | 2000-05-09 | Taiwan Semiconductor Manufacturing Co., Ltd | Apparatus for detecting correct positioning of a wafer cassette |
| US20010016273A1 (en) | 1998-05-08 | 2001-08-23 | Krishnan Narasimhan | Multilayer cvd coated article and process for producing same |
| US6218288B1 (en) | 1998-05-11 | 2001-04-17 | Micron Technology, Inc. | Multiple step methods for forming conformal layers |
| KR20010071235A (ko) | 1998-05-11 | 2001-07-28 | 세미툴 인코포레이티드 | 열반응기용 온도 제어 시스템 |
| NL1009171C2 (nl) | 1998-05-14 | 1999-12-10 | Asm Int | Waferrek voorzien van een gasverdeelinrichting. |
| KR100309918B1 (ko) | 1998-05-16 | 2001-12-17 | 윤종용 | 광시야각액정표시장치및그제조방법 |
| US6284050B1 (en) | 1998-05-18 | 2001-09-04 | Novellus Systems, Inc. | UV exposure for improving properties and adhesion of dielectric polymer films formed by chemical vapor deposition |
| JP3208376B2 (ja) | 1998-05-20 | 2001-09-10 | 株式会社半導体プロセス研究所 | 成膜方法及び半導体装置の製造方法 |
| JPH11343571A (ja) | 1998-05-29 | 1999-12-14 | Ngk Insulators Ltd | サセプター |
| KR20000000946A (ko) | 1998-06-05 | 2000-01-15 | 주재현 | 기화기 및 이를 사용한 화학 기상 증착장치 |
| NL1009327C2 (nl) | 1998-06-05 | 1999-12-10 | Asm Int | Werkwijze en inrichting voor het overbrengen van wafers. |
| JPH11354637A (ja) | 1998-06-11 | 1999-12-24 | Oki Electric Ind Co Ltd | 配線の接続構造及び配線の接続部の形成方法 |
| US6146463A (en) | 1998-06-12 | 2000-11-14 | Applied Materials, Inc. | Apparatus and method for aligning a substrate on a support member |
| US20020009861A1 (en) | 1998-06-12 | 2002-01-24 | Pravin K. Narwankar | Method and apparatus for the formation of dielectric layers |
| US6148761A (en) | 1998-06-16 | 2000-11-21 | Applied Materials, Inc. | Dual channel gas distribution plate |
| US6302964B1 (en) | 1998-06-16 | 2001-10-16 | Applied Materials, Inc. | One-piece dual gas faceplate for a showerhead in a semiconductor wafer processing system |
| US6086677A (en) | 1998-06-16 | 2000-07-11 | Applied Materials, Inc. | Dual gas faceplate for a showerhead in a semiconductor wafer processing system |
| JP2963443B1 (ja) | 1998-06-19 | 1999-10-18 | キヤノン販売株式会社 | 半導体装置の製造装置 |
| KR20000002833A (ko) | 1998-06-23 | 2000-01-15 | 윤종용 | 반도체 웨이퍼 보트 |
| USD412512S (en) | 1998-06-24 | 1999-08-03 | Marc H Boisvert | Tool holding device |
| JP3333135B2 (ja) | 1998-06-25 | 2002-10-07 | 東京エレクトロン株式会社 | 熱処理装置及び熱処理方法 |
| US6015459A (en) | 1998-06-26 | 2000-01-18 | Extreme Devices, Inc. | Method for doping semiconductor materials |
| JP3472482B2 (ja) | 1998-06-30 | 2003-12-02 | 富士通株式会社 | 半導体装置の製造方法と製造装置 |
| US6232248B1 (en) | 1998-07-03 | 2001-05-15 | Tokyo Electron Limited | Single-substrate-heat-processing method for performing reformation and crystallization |
| US6335293B1 (en) | 1998-07-13 | 2002-01-01 | Mattson Technology, Inc. | Systems and methods for two-sided etch of a semiconductor substrate |
| US6182603B1 (en) | 1998-07-13 | 2001-02-06 | Applied Komatsu Technology, Inc. | Surface-treated shower head for use in a substrate processing chamber |
| US6210485B1 (en) | 1998-07-21 | 2001-04-03 | Applied Materials, Inc. | Chemical vapor deposition vaporizer |
| JP2000040728A (ja) | 1998-07-22 | 2000-02-08 | Nippon Asm Kk | ウェハ搬送機構 |
| JP4641569B2 (ja) | 1998-07-24 | 2011-03-02 | 日本碍子株式会社 | 窒化アルミニウム質焼結体、耐蝕性部材、金属埋設および半導体保持装置 |
| NL1009767C2 (nl) | 1998-07-29 | 2000-02-04 | Asm Int | Werkwijze en inrichting voor het etsen van een substraat. |
| US20010001384A1 (en) | 1998-07-29 | 2001-05-24 | Takeshi Arai | Silicon epitaxial wafer and production method therefor |
| US6344232B1 (en) | 1998-07-30 | 2002-02-05 | The United States Of America As Represented By The Secretary Of The Air Force | Computer controlled temperature and oxygen maintenance for fiber coating CVD |
| KR100297552B1 (ko) | 1998-08-03 | 2001-11-30 | 윤종용 | 반도체소자제조용식각장치의절연창 |
| KR100275738B1 (ko) | 1998-08-07 | 2000-12-15 | 윤종용 | 원자층 증착법을 이용한 박막 제조방법 |
| USD412270S (en) | 1998-08-10 | 1999-07-27 | David Frank Fredrickson | Article lifter |
| US6462310B1 (en) | 1998-08-12 | 2002-10-08 | Asml Us, Inc | Hot wall rapid thermal processor |
| JP2000068355A (ja) | 1998-08-21 | 2000-03-03 | Dainippon Screen Mfg Co Ltd | 基板処理装置 |
| US6596398B1 (en) | 1998-08-21 | 2003-07-22 | Atofina Chemicals, Inc. | Solar control coated glass |
| US6133161A (en) | 1998-08-27 | 2000-10-17 | Micron Technology, Inc. | Methods of forming a film on a substrate using complexes having tris(pyrazolyl) methanate ligands |
| US6569971B2 (en) | 1998-08-27 | 2003-05-27 | Hyundai Electronics Industries Co., Ltd. | Polymers for photoresist and photoresist compositions using the same |
| US6427622B2 (en) | 1998-08-28 | 2002-08-06 | Mv Systems, Inc. | Hot wire chemical vapor deposition method and apparatus using graphite hot rods |
| US6727190B2 (en) | 1998-09-03 | 2004-04-27 | Micron Technology, Inc. | Method of forming fluorine doped boron-phosphorous silicate glass (F-BPSG) insulating materials |
| US6323081B1 (en) | 1998-09-03 | 2001-11-27 | Micron Technology, Inc. | Diffusion barrier layers and methods of forming same |
| JP3830670B2 (ja) | 1998-09-03 | 2006-10-04 | 三菱電機株式会社 | 半導体製造装置 |
| US6190732B1 (en) | 1998-09-03 | 2001-02-20 | Cvc Products, Inc. | Method and system for dispensing process gas for fabricating a device on a substrate |
| EP1038996B1 (en) | 1998-09-11 | 2007-09-05 | Japan Science and Technology Agency | Combinatorial molecular layer epitaxy device |
| KR100566905B1 (ko) | 1998-09-11 | 2006-07-03 | 에이에스엠지니텍코리아 주식회사 | 표면 촉매를 이용한 화학 증착방법_ |
| US6284149B1 (en) | 1998-09-18 | 2001-09-04 | Applied Materials, Inc. | High-density plasma etching of carbon-based low-k materials in a integrated circuit |
| US6187672B1 (en) | 1998-09-22 | 2001-02-13 | Conexant Systems, Inc. | Interconnect with low dielectric constant insulators for semiconductor integrated circuit manufacturing |
| KR100646906B1 (ko) | 1998-09-22 | 2006-11-17 | 동경 엘렉트론 주식회사 | 기판처리장치 및 기판처리방법 |
| US6800571B2 (en) | 1998-09-29 | 2004-10-05 | Applied Materials Inc. | CVD plasma assisted low dielectric constant films |
| US6143082A (en) | 1998-10-08 | 2000-11-07 | Novellus Systems, Inc. | Isolation of incompatible processes in a multi-station processing chamber |
| US6257758B1 (en) | 1998-10-09 | 2001-07-10 | Claud S. Gordon Company | Surface temperature sensor |
| NL1010317C2 (nl) | 1998-10-14 | 2000-05-01 | Asm Int | Sorteer/opslaginrichting voor wafers en werkwijze voor het hanteren daarvan. |
| USD451893S1 (en) | 1998-10-15 | 2001-12-11 | Meto International Gmbh | Arrangement of aluminum foil coils forming an inductor of a resonant frequency identification element |
| US6462671B2 (en) | 1998-10-20 | 2002-10-08 | Brendyl Trent Bushner | Remote securities based data reception and order system |
| US20030101938A1 (en) | 1998-10-27 | 2003-06-05 | Applied Materials, Inc. | Apparatus for the deposition of high dielectric constant films |
| US6454860B2 (en) | 1998-10-27 | 2002-09-24 | Applied Materials, Inc. | Deposition reactor having vaporizing, mixing and cleaning capabilities |
| JP3234576B2 (ja) | 1998-10-30 | 2001-12-04 | アプライド マテリアルズ インコーポレイテッド | 半導体製造装置におけるウェハ支持装置 |
| US6063196A (en) | 1998-10-30 | 2000-05-16 | Applied Materials, Inc. | Semiconductor processing chamber calibration tool |
| KR100317238B1 (ko) | 1998-11-03 | 2002-02-19 | 윤종용 | 가열로 온도검출용 스파이크 열전대 소자_ |
| US6423613B1 (en) | 1998-11-10 | 2002-07-23 | Micron Technology, Inc. | Low temperature silicon wafer bond process with bulk material bond strength |
| US6183564B1 (en) | 1998-11-12 | 2001-02-06 | Tokyo Electron Limited | Buffer chamber for integrating physical and chemical vapor deposition chambers together in a processing system |
| US6214717B1 (en) | 1998-11-16 | 2001-04-10 | Taiwan Semiconductor Manufacturing Company | Method for adding plasma treatment on bond pad to prevent bond pad staining problems |
| JP2000150617A (ja) | 1998-11-17 | 2000-05-30 | Tokyo Electron Ltd | 搬送装置 |
| JP3664897B2 (ja) | 1998-11-18 | 2005-06-29 | 東京エレクトロン株式会社 | 縦型熱処理装置 |
| US6143079A (en) | 1998-11-19 | 2000-11-07 | Asm America, Inc. | Compact process chamber for improved process uniformity |
| US6177688B1 (en) | 1998-11-24 | 2001-01-23 | North Carolina State University | Pendeoepitaxial gallium nitride semiconductor layers on silcon carbide substrates |
| US6113703A (en) | 1998-11-25 | 2000-09-05 | Applied Materials, Inc. | Method and apparatus for processing the upper and lower faces of a wafer |
| US6383300B1 (en) | 1998-11-27 | 2002-05-07 | Tokyo Electron Ltd. | Heat treatment apparatus and cleaning method of the same |
| DE19956531A1 (de) | 1998-11-27 | 2000-05-31 | Hyundai Electronics Ind | Vernetzer für ein Photoresist und diesen enthaltende Photoresistzusammensetzung |
| RU2141647C1 (ru) | 1998-11-30 | 1999-11-20 | Войналович Александр Владимирович | Способ контроля анализируемой поверхности и сканирующий анализатор поверхности |
| US6283692B1 (en) | 1998-12-01 | 2001-09-04 | Applied Materials, Inc. | Apparatus for storing and moving a cassette |
| JP2000174123A (ja) | 1998-12-09 | 2000-06-23 | Nec Corp | 半導体装置及びその製造方法 |
| US6310328B1 (en) | 1998-12-10 | 2001-10-30 | Mattson Technologies, Inc. | Rapid thermal processing chamber for processing multiple wafers |
| US20010052556A1 (en) | 1998-12-14 | 2001-12-20 | Weichi Ting | Injector |
| US6364954B2 (en) | 1998-12-14 | 2002-04-02 | Applied Materials, Inc. | High temperature chemical vapor deposition chamber |
| JP2000183346A (ja) | 1998-12-15 | 2000-06-30 | Toshiba Corp | 半導体装置及びその製造方法 |
| JP3375294B2 (ja) | 1998-12-17 | 2003-02-10 | 東京エレクトロン株式会社 | 処理装置、処理システムおよび該装置における清浄エアの供給方法 |
| US6255221B1 (en) | 1998-12-17 | 2001-07-03 | Lam Research Corporation | Methods for running a high density plasma etcher to achieve reduced transistor device damage |
| US6129954A (en) | 1998-12-22 | 2000-10-10 | General Electric Company | Method for thermally spraying crack-free mullite coatings on ceramic-based substrates |
| US6607948B1 (en) | 1998-12-24 | 2003-08-19 | Kabushiki Kaisha Toshiba | Method of manufacturing a substrate using an SiGe layer |
| US6496819B1 (en) | 1998-12-28 | 2002-12-17 | Oracle Corporation | Rewriting a query in terms of a summary based on functional dependencies and join backs, and based on join derivability |
| KR100281094B1 (ko) | 1998-12-30 | 2001-02-01 | 서평원 | 이동 통신 시스템에서 셀 탐색 방법 |
| US6137240A (en) | 1998-12-31 | 2000-10-24 | Lumion Corporation | Universal ballast control circuit |
| US6579805B1 (en) | 1999-01-05 | 2003-06-17 | Ronal Systems Corp. | In situ chemical generator and method |
| JP3433392B2 (ja) | 1999-01-12 | 2003-08-04 | セントラル硝子株式会社 | クリーニングガス及び真空処理装置のクリーニング方法 |
| NL1011017C2 (nl) | 1999-01-13 | 2000-07-31 | Asm Int | Inrichting voor het positioneren van een wafer. |
| KR100331544B1 (ko) | 1999-01-18 | 2002-04-06 | 윤종용 | 반응챔버에 가스를 유입하는 방법 및 이에 사용되는 샤워헤드 |
| JP3119641B2 (ja) | 1999-01-19 | 2000-12-25 | 九州日本電気株式会社 | 縦型熱処理装置 |
| US6490493B1 (en) | 1999-01-21 | 2002-12-03 | Rosemount Inc. | Industrial process device management software |
| US7217325B2 (en) | 1999-01-22 | 2007-05-15 | Semitool, Inc. | System for processing a workpiece |
| TW455912B (en) | 1999-01-22 | 2001-09-21 | Sony Corp | Method and apparatus for film deposition |
| JP2987148B1 (ja) | 1999-01-26 | 1999-12-06 | 国際電気株式会社 | 基板処理装置 |
| JP3579278B2 (ja) | 1999-01-26 | 2004-10-20 | 東京エレクトロン株式会社 | 縦型熱処理装置及びシール装置 |
| US6250747B1 (en) | 1999-01-28 | 2001-06-26 | Hewlett-Packard Company | Print cartridge with improved back-pressure regulation |
| US6737716B1 (en) | 1999-01-29 | 2004-05-18 | Kabushiki Kaisha Toshiba | Semiconductor device and method of manufacturing the same |
| US6044860A (en) | 1999-02-01 | 2000-04-04 | Spx Corporation | Adjustable lockout device for knife gate valves |
| US6374831B1 (en) | 1999-02-04 | 2002-04-23 | Applied Materials, Inc. | Accelerated plasma clean |
| US6281141B1 (en) | 1999-02-08 | 2001-08-28 | Steag Rtp Systems, Inc. | Process for forming thin dielectric layers in semiconductor devices |
| DE10080457T1 (de) | 1999-02-12 | 2001-04-26 | Gelest Inc | CVD-Abscheidung von Wolframnitrid |
| IT1308606B1 (it) | 1999-02-12 | 2002-01-08 | Lpe Spa | Dispositivo per maneggiare substrati mediante un istema autolivellante a depressione in reattori epistassiali ad induzione con suscettore |
| US6190037B1 (en) | 1999-02-19 | 2001-02-20 | Applied Materials, Inc. | Non-intrusive, on-the-fly (OTF) temperature measurement and monitoring system |
| JP2000249058A (ja) | 1999-02-26 | 2000-09-12 | Ebara Corp | トラップ装置 |
| US6528171B1 (en) | 1999-03-03 | 2003-03-04 | Widia Gmbh | Tool with a molybdenum sulfide containing coating and method for its production |
| US6540838B2 (en) | 2000-11-29 | 2003-04-01 | Genus, Inc. | Apparatus and concept for minimizing parasitic chemical vapor deposition during atomic layer deposition |
| US6426125B1 (en) | 1999-03-17 | 2002-07-30 | General Electric Company | Multilayer article and method of making by ARC plasma deposition |
| JP2000269163A (ja) | 1999-03-18 | 2000-09-29 | Sony Corp | 金属膜の形成方法及び配線の形成方法 |
| US6250250B1 (en) | 1999-03-18 | 2001-06-26 | Yuri Maishev | Multiple-cell source of uniform plasma |
| US6022802A (en) | 1999-03-18 | 2000-02-08 | Taiwan Semiconductor Manufacturing Company | Low dielectric constant intermetal dielectric (IMD) by formation of air gap between metal lines |
| KR100596822B1 (ko) | 1999-03-30 | 2006-07-03 | 동경 엘렉트론 주식회사 | 플라즈마 처리 장치, 그 보수 방법 및 그 시공 방법 |
| JP3250154B2 (ja) | 1999-03-31 | 2002-01-28 | 株式会社スーパーシリコン研究所 | 半導体ウエハ製造装置 |
| US20020052119A1 (en) | 1999-03-31 | 2002-05-02 | Patrick A. Van Cleemput | In-situ flowing bpsg gap fill process using hdp |
| JP3398936B2 (ja) | 1999-04-09 | 2003-04-21 | 日本エー・エス・エム株式会社 | 半導体処理装置 |
| US6263830B1 (en) | 1999-04-12 | 2001-07-24 | Matrix Integrated Systems, Inc. | Microwave choke for remote plasma generator |
| TW465017B (en) | 1999-04-13 | 2001-11-21 | Applied Materials Inc | A corrosion-resistant protective coating for an apparatus and method for processing a substrate |
| US6264467B1 (en) | 1999-04-14 | 2001-07-24 | Applied Materials, Inc. | Micro grooved support surface for reducing substrate wear and slip formation |
| US6326597B1 (en) | 1999-04-15 | 2001-12-04 | Applied Materials, Inc. | Temperature control system for process chamber |
| EP1090417A1 (en) | 1999-04-20 | 2001-04-11 | Tokyo Electron Limited | Method for single chamber processing of pecvd-ti and cvd-tin films in ic manufacturing |
| US6265311B1 (en) | 1999-04-27 | 2001-07-24 | Tokyo Electron Limited | PECVD of TaN films from tantalum halide precursors |
| US6410433B1 (en) | 1999-04-27 | 2002-06-25 | Tokyo Electron Limited | Thermal CVD of TaN films from tantalum halide precursors |
| JP3965258B2 (ja) | 1999-04-30 | 2007-08-29 | 日本碍子株式会社 | 半導体製造装置用のセラミックス製ガス供給構造 |
| US7588720B2 (en) | 1999-04-30 | 2009-09-15 | Tso3, Inc. | Method and apparatus for ozone sterilization |
| KR100347379B1 (ko) | 1999-05-01 | 2002-08-07 | 주식회사 피케이엘 | 복수매 기판의 박막 증착 공정이 가능한 원자층 증착장치 |
| JP3072989B1 (ja) | 1999-05-14 | 2000-08-07 | 日本エー・エス・エム株式会社 | 半導体基板上に薄膜を形成する成膜装置における成膜方法 |
| JP2000323487A (ja) | 1999-05-14 | 2000-11-24 | Tokyo Electron Ltd | 枚葉式熱処理装置 |
| JP2000329447A (ja) | 1999-05-17 | 2000-11-30 | Matsushita Refrig Co Ltd | 冷蔵庫および除霜用ヒーター |
| JP4294791B2 (ja) | 1999-05-17 | 2009-07-15 | アプライド マテリアルズ インコーポレイテッド | 半導体製造装置 |
| US6617553B2 (en) | 1999-05-19 | 2003-09-09 | Applied Materials, Inc. | Multi-zone resistive heater |
| US6423949B1 (en) | 1999-05-19 | 2002-07-23 | Applied Materials, Inc. | Multi-zone resistive heater |
| US6440261B1 (en) | 1999-05-25 | 2002-08-27 | Applied Materials, Inc. | Dual buffer chamber cluster tool for semiconductor wafer processing |
| US6119710A (en) | 1999-05-26 | 2000-09-19 | Cyber Instrument Technologies Llc | Method for wide range gas flow system with real time flow measurement and correction |
| US6461801B1 (en) | 1999-05-27 | 2002-10-08 | Matrix Integrated Systems, Inc. | Rapid heating and cooling of workpiece chucks |
| KR100495551B1 (ko) | 1999-05-28 | 2005-06-16 | 동경 엘렉트론 주식회사 | 반도체 처리 시스템의 오존 처리 장치 |
| US20020033183A1 (en) | 1999-05-29 | 2002-03-21 | Sheng Sun | Method and apparatus for enhanced chamber cleaning |
| JP3668079B2 (ja) | 1999-05-31 | 2005-07-06 | 忠弘 大見 | プラズマプロセス装置 |
| US6200897B1 (en) | 1999-06-06 | 2001-03-13 | United Semiconductor Corp. | Method for manufacturing even dielectric layer |
| JP3940546B2 (ja) | 1999-06-07 | 2007-07-04 | 株式会社東芝 | パターン形成方法およびパターン形成材料 |
| US6656281B1 (en) | 1999-06-09 | 2003-12-02 | Tokyo Electron Limited | Substrate processing apparatus and substrate processing method |
| US6548402B2 (en) | 1999-06-11 | 2003-04-15 | Applied Materials, Inc. | Method of depositing a thick titanium nitride film |
| US6555183B2 (en) | 1999-06-11 | 2003-04-29 | Applied Materials, Inc. | Plasma treatment of a titanium nitride film formed by chemical vapor deposition |
| TW466576B (en) | 1999-06-15 | 2001-12-01 | Ebara Corp | Substrate processing apparatus |
| US6281098B1 (en) | 1999-06-15 | 2001-08-28 | Midwest Research Institute | Process for Polycrystalline film silicon growth |
| JP2001004062A (ja) | 1999-06-17 | 2001-01-09 | Benkan Corp | 流量制御用バルブ |
| JP2001007102A (ja) | 1999-06-17 | 2001-01-12 | Mitsubishi Electric Corp | 半導体形成方法および半導体製造装置 |
| US6821571B2 (en) | 1999-06-18 | 2004-11-23 | Applied Materials Inc. | Plasma treatment to enhance adhesion and to minimize oxidation of carbon-containing layers |
| US6528752B1 (en) | 1999-06-18 | 2003-03-04 | Tokyo Electron Limited | Plasma processing apparatus and plasma processing method |
| JP4726369B2 (ja) | 1999-06-19 | 2011-07-20 | エー・エス・エムジニテックコリア株式会社 | 化学蒸着反応炉及びこれを利用した薄膜形成方法 |
| US6812157B1 (en) | 1999-06-24 | 2004-11-02 | Prasad Narhar Gadgil | Apparatus for atomic layer chemical vapor deposition |
| US6314974B1 (en) | 1999-06-28 | 2001-11-13 | Fairchild Semiconductor Corporation | Potted transducer array with matching network in a multiple pass configuration |
| FR2795745B1 (fr) | 1999-06-30 | 2001-08-03 | Saint Gobain Vitrage | Procede de depot d'une couche a base de tungstene et/ou de molybdene sur un substrat verrier, ceramique ou vitroceramique, et substrat ainsi revetu |
| US6245192B1 (en) | 1999-06-30 | 2001-06-12 | Lam Research Corporation | Gas distribution apparatus for semiconductor processing |
| US6587108B1 (en) | 1999-07-01 | 2003-07-01 | Honeywell Inc. | Multivariable process matrix display and methods regarding same |
| JP3252835B2 (ja) | 1999-07-02 | 2002-02-04 | 松下電器産業株式会社 | 半導体装置およびその製造方法 |
| US6151446A (en) | 1999-07-06 | 2000-11-21 | Applied Materials, Inc. | Apparatus and method for thermally processing substrates including a processor using multiple detection signals |
| JP2001023955A (ja) | 1999-07-07 | 2001-01-26 | Mitsubishi Electric Corp | プラズマ処理装置 |
| JP4288767B2 (ja) | 1999-07-07 | 2009-07-01 | 東京エレクトロン株式会社 | 半導体装置の製造方法 |
| US6240875B1 (en) | 1999-07-07 | 2001-06-05 | Asm International N.V. | Vertical oven with a boat for the uniform treatment of wafers |
| US6214121B1 (en) | 1999-07-07 | 2001-04-10 | Applied Materials, Inc. | Pedestal with a thermally controlled platen |
| US6238734B1 (en) | 1999-07-08 | 2001-05-29 | Air Products And Chemicals, Inc. | Liquid precursor mixtures for deposition of multicomponent metal containing materials |
| JP2001023872A (ja) | 1999-07-09 | 2001-01-26 | Hitachi Ltd | 半導体基板処理装置 |
| US6375749B1 (en) | 1999-07-14 | 2002-04-23 | Seh America, Inc. | Susceptorless semiconductor wafer support and reactor system for epitaxial layer growth |
| US6368988B1 (en) | 1999-07-16 | 2002-04-09 | Micron Technology, Inc. | Combined gate cap or digit line and spacer deposition using HDP |
| US6297539B1 (en) | 1999-07-19 | 2001-10-02 | Sharp Laboratories Of America, Inc. | Doped zirconia, or zirconia-like, dielectric film transistor structure and deposition method for same |
| FI110311B (fi) | 1999-07-20 | 2002-12-31 | Asm Microchemistry Oy | Menetelmä ja laitteisto aineiden poistamiseksi kaasuista |
| KR100327346B1 (ko) | 1999-07-20 | 2002-03-06 | 윤종용 | 선택적 폴리머 증착을 이용한 플라즈마 식각방법 및 이를이용한 콘택홀 형성방법 |
| US6239715B1 (en) | 1999-07-21 | 2001-05-29 | Karen L. Belton | Beeper system |
| US7381944B2 (en) | 2004-04-28 | 2008-06-03 | Sionex Corporation | Systems and methods for ion species analysis with enhanced condition control and data interpretation |
| JP3701148B2 (ja) | 1999-07-28 | 2005-09-28 | 株式会社日立製作所 | コンテンツの配信方法 |
| US6867859B1 (en) | 1999-08-03 | 2005-03-15 | Lightwind Corporation | Inductively coupled plasma spectrometer for process diagnostics and control |
| EP1077479A1 (en) | 1999-08-17 | 2001-02-21 | Applied Materials, Inc. | Post-deposition treatment to enchance properties of Si-O-C low K film |
| KR100557594B1 (ko) | 1999-08-17 | 2006-03-10 | 주식회사 하이닉스반도체 | 노광후 지연 안정성을 갖는 신규의 포토레지스트용 단량체, 그의 공중합체 및 이를 함유한 포토레지스트 조성물 |
| EP1077274A1 (en) | 1999-08-17 | 2001-02-21 | Applied Materials, Inc. | Lid cooling mechanism and method for optimized deposition of low-k dielectric using tri methylsilane-ozone based processes |
| US6602806B1 (en) | 1999-08-17 | 2003-08-05 | Applied Materials, Inc. | Thermal CVD process for depositing a low dielectric constant carbon-doped silicon oxide film |
| EP1077477B1 (en) | 1999-08-17 | 2008-12-17 | Applied Materials, Inc. | Surface treatment of C-doped SiO2 film to enhance film stability during O2 ashing |
| US6432206B1 (en) | 1999-08-30 | 2002-08-13 | Si Diamond Technology, Inc. | Heating element for use in a hot filament chemical vapor deposition chamber |
| US6579833B1 (en) | 1999-09-01 | 2003-06-17 | The Board Of Trustees Of The University Of Illinois | Process for converting a metal carbide to carbon by etching in halogens |
| US6410459B2 (en) | 1999-09-02 | 2002-06-25 | Micron Technology, Inc. | Wafer planarization using a uniform layer of material and method and apparatus for forming uniform layer of material used in semiconductor processing |
| JP2001077088A (ja) | 1999-09-02 | 2001-03-23 | Tokyo Electron Ltd | プラズマ処理装置 |
| US6238636B1 (en) | 1999-09-03 | 2001-05-29 | Air Liquide America Corporation | Process and systems for purification of boron trichloride |
| KR100427916B1 (ko) | 1999-09-03 | 2004-04-28 | 미쯔이 죠센 가부시키가이샤 | 웨이퍼 보유 지지구 |
| US6511539B1 (en) | 1999-09-08 | 2003-01-28 | Asm America, Inc. | Apparatus and method for growth of a thin film |
| US7894474B1 (en) | 1999-09-10 | 2011-02-22 | Koninklijke Philips Electronics N.V. | Remote control of an electronic device through downloading of a control interface of the electronic device in a mobile station |
| US6355153B1 (en) | 1999-09-17 | 2002-03-12 | Nutool, Inc. | Chip interconnect and packaging deposition methods and structures |
| US6451157B1 (en) | 1999-09-23 | 2002-09-17 | Lam Research Corporation | Gas distribution apparatus for semiconductor processing |
| US6293700B1 (en) | 1999-09-24 | 2001-09-25 | Fluke Corporation | Calibrated isothermal assembly for a thermocouple thermometer |
| US6420792B1 (en) | 1999-09-24 | 2002-07-16 | Texas Instruments Incorporated | Semiconductor wafer edge marking |
| US6740853B1 (en) | 1999-09-29 | 2004-05-25 | Tokyo Electron Limited | Multi-zone resistance heater |
| US7066703B2 (en) | 1999-09-29 | 2006-06-27 | Tokyo Electron Limited | Chuck transport method and system |
| US6333275B1 (en) | 1999-10-01 | 2001-12-25 | Novellus Systems, Inc. | Etchant mixing system for edge bevel removal of copper from silicon wafers |
| US6296710B1 (en) | 1999-10-06 | 2001-10-02 | Advanced Micro Devices, Inc. | Multi-port gas injector for a vertical furnace used in semiconductor processing |
| US7010580B1 (en) | 1999-10-08 | 2006-03-07 | Agile Software Corp. | Method and apparatus for exchanging data in a platform independent manner |
| US6503758B1 (en) | 1999-10-12 | 2003-01-07 | President & Fellows Of Harvard College | Systems and methods for measuring nitrate levels |
| JP5331282B2 (ja) | 1999-10-13 | 2013-10-30 | ジーイー・エナジー・ユーエスエー・エルエルシー | サファイア強化熱電対保護管 |
| US6500487B1 (en) | 1999-10-18 | 2002-12-31 | Advanced Technology Materials, Inc | Abatement of effluent from chemical vapor deposition processes using ligand exchange resistant metal-organic precursor solutions |
| US6391385B1 (en) | 1999-10-18 | 2002-05-21 | Advanced Technology Materials, Inc. | Method of abating of effluents from chemical vapor deposition processes using organometallic source reagents |
| US6203613B1 (en) | 1999-10-19 | 2001-03-20 | International Business Machines Corporation | Atomic layer deposition with nitrate containing precursors |
| JP4387573B2 (ja) | 1999-10-26 | 2009-12-16 | 東京エレクトロン株式会社 | プロセス排気ガスモニタ装置及び方法、半導体製造装置、及び半導体製造装置管理システム及び方法 |
| US6287913B1 (en) | 1999-10-26 | 2001-09-11 | International Business Machines Corporation | Double polysilicon process for providing single chip high performance logic and compact embedded memory structure |
| KR100340716B1 (ko) | 1999-10-29 | 2002-06-20 | 윤종용 | 실리콘 질화막 형성방법 |
| KR20010045418A (ko) | 1999-11-05 | 2001-06-05 | 박종섭 | 신규한 포토레지스트 단량체, 그의 중합체 및 이를함유하는 포토레지스트 조성물 |
| JP3551867B2 (ja) | 1999-11-09 | 2004-08-11 | 信越化学工業株式会社 | シリコンフォーカスリング及びその製造方法 |
| KR100547248B1 (ko) | 1999-11-12 | 2006-02-01 | 주식회사 하이닉스반도체 | 알루미나를 사용한 반도체 소자의 게이트 절연막 형성방법 |
| US6320320B1 (en) | 1999-11-15 | 2001-11-20 | Lam Research Corporation | Method and apparatus for producing uniform process rates |
| JP4209057B2 (ja) | 1999-12-01 | 2009-01-14 | 東京エレクトロン株式会社 | セラミックスヒーターならびにそれを用いた基板処理装置および基板処理方法 |
| KR100369324B1 (ko) | 1999-12-02 | 2003-01-24 | 한국전자통신연구원 | 평면형 마이크로 공동구조 제조 방법 |
| US6582891B1 (en) | 1999-12-02 | 2003-06-24 | Axcelis Technologies, Inc. | Process for reducing edge roughness in patterned photoresist |
| FI118804B (fi) | 1999-12-03 | 2008-03-31 | Asm Int | Menetelmä oksidikalvojen kasvattamiseksi |
| EP1107512A1 (en) | 1999-12-03 | 2001-06-13 | Sony International (Europe) GmbH | Communication device and software for operating multimedia applications |
| US6780704B1 (en) | 1999-12-03 | 2004-08-24 | Asm International Nv | Conformal thin films over textured capacitor electrodes |
| US6589352B1 (en) | 1999-12-10 | 2003-07-08 | Applied Materials, Inc. | Self aligning non contact shadow ring process kit |
| KR20010062209A (ko) | 1999-12-10 | 2001-07-07 | 히가시 데쓰로 | 고내식성 막이 내부에 형성된 챔버를 구비하는 처리 장치 |
| JP3659101B2 (ja) | 1999-12-13 | 2005-06-15 | 富士ゼロックス株式会社 | 窒化物半導体素子及びその製造方法 |
| US7838842B2 (en) | 1999-12-13 | 2010-11-23 | Semequip, Inc. | Dual mode ion source for ion implantation |
| WO2001043157A1 (en) | 1999-12-13 | 2001-06-14 | Semequip, Inc. | Ion implantation ion source, system and method |
| US6452338B1 (en) | 1999-12-13 | 2002-09-17 | Semequip, Inc. | Electron beam ion source with integral low-temperature vaporizer |
| JP3925780B2 (ja) | 1999-12-15 | 2007-06-06 | エー・エス・エムジニテックコリア株式会社 | 触媒及び化学気相蒸着法を用いて銅配線及び薄膜を形成する方法 |
| US6225745B1 (en) | 1999-12-17 | 2001-05-01 | Axcelis Technologies, Inc. | Dual plasma source for plasma process chamber |
| JP2001176952A (ja) | 1999-12-21 | 2001-06-29 | Toshiba Mach Co Ltd | ウェーハ位置ずれ検出装置 |
| JP3810604B2 (ja) | 1999-12-21 | 2006-08-16 | Ｓｍｃ株式会社 | ゲートバルブ |
| US6503330B1 (en) | 1999-12-22 | 2003-01-07 | Genus, Inc. | Apparatus and method to achieve continuous interface and ultrathin film during atomic layer deposition |
| US6673198B1 (en) | 1999-12-22 | 2004-01-06 | Lam Research Corporation | Semiconductor processing equipment having improved process drift control |
| JP3582437B2 (ja) | 1999-12-24 | 2004-10-27 | 株式会社村田製作所 | 薄膜製造方法及びそれに用いる薄膜製造装置 |
| JP4089113B2 (ja) | 1999-12-28 | 2008-05-28 | 株式会社Ｉｈｉ | 薄膜作成装置 |
| WO2001050349A1 (en) | 1999-12-30 | 2001-07-12 | Rutgers, The State University Of New Jersey | Electronic document customization and transformation utilizing user feedback |
| US6335049B1 (en) | 2000-01-03 | 2002-01-01 | Micron Technology, Inc. | Chemical vapor deposition methods of forming a high K dielectric layer and methods of forming a capacitor |
| US6576062B2 (en) | 2000-01-06 | 2003-06-10 | Tokyo Electron Limited | Film forming apparatus and film forming method |
| JP5165825B2 (ja) | 2000-01-10 | 2013-03-21 | 東京エレクトロン株式会社 | 分割された電極集合体並びにプラズマ処理方法。 |
| US6541367B1 (en) | 2000-01-18 | 2003-04-01 | Applied Materials, Inc. | Very low dielectric constant plasma-enhanced CVD films |
| KR100767762B1 (ko) | 2000-01-18 | 2007-10-17 | 에이에스엠 저펜 가부시기가이샤 | 자가 세정을 위한 원격 플라즈마 소스를 구비한 cvd 반도체 공정장치 |
| TW473792B (en) | 2000-01-20 | 2002-01-21 | Ngk Insulators Ltd | Electrostatic chuck |
| JP2001203211A (ja) | 2000-01-20 | 2001-07-27 | Hitachi Kokusai Electric Inc | 水素アニール処理方法及びその装置 |
| JP3654142B2 (ja) | 2000-01-20 | 2005-06-02 | 住友電気工業株式会社 | 半導体製造装置用ガスシャワー体 |
| JP4384770B2 (ja) | 2000-01-27 | 2009-12-16 | 株式会社日立国際電気 | 基板処理装置 |
| JP2001207265A (ja) | 2000-01-27 | 2001-07-31 | Kubota Corp | 成膜装置 |
| JP2001207268A (ja) | 2000-01-27 | 2001-07-31 | Kubota Corp | 成膜装置 |
| US6475930B1 (en) | 2000-01-31 | 2002-11-05 | Motorola, Inc. | UV cure process and tool for low k film formation |
| US6432255B1 (en) | 2000-01-31 | 2002-08-13 | Applied Materials, Inc. | Method and apparatus for enhancing chamber cleaning |
| US6436819B1 (en) | 2000-02-01 | 2002-08-20 | Applied Materials, Inc. | Nitrogen treatment of a metal nitride/metal stack |
| US6191399B1 (en) | 2000-02-01 | 2001-02-20 | Asm America, Inc. | System of controlling the temperature of a processing chamber |
| JP4174941B2 (ja) | 2000-02-03 | 2008-11-05 | 株式会社デンソー | 薄膜製造方法及び薄膜製造装置 |
| US6521046B2 (en) | 2000-02-04 | 2003-02-18 | Kabushiki Kaisha Kobe Seiko Sho | Chamber material made of Al alloy and heater block |
| KR100780143B1 (ko) | 2000-02-04 | 2007-11-27 | 아익스트론 아게 | 기재상에 하나 이상의 층을 증착하기 위한 장치와 방법 |
| US6372583B1 (en) | 2000-02-09 | 2002-04-16 | Intel Corporation | Process for making semiconductor device with epitaxially grown source and drain |
| DE10005820C1 (de) | 2000-02-10 | 2001-08-02 | Schott Glas | Gasversorungsvorrichtung für Precursoren geringen Dampfdrucks |
| US20020009119A1 (en) | 2000-02-11 | 2002-01-24 | Matthew William T. | Environmental heat stress monitor |
| US6407435B1 (en) | 2000-02-11 | 2002-06-18 | Sharp Laboratories Of America, Inc. | Multilayer dielectric stack and method |
| US6573030B1 (en) | 2000-02-17 | 2003-06-03 | Applied Materials, Inc. | Method for depositing an amorphous carbon layer |
| KR100520188B1 (ko) | 2000-02-18 | 2005-10-10 | 주식회사 하이닉스반도체 | 부분적으로 가교화된 2층 포토레지스트용 중합체 |
| TW476996B (en) | 2000-02-28 | 2002-02-21 | Mitsubishi Material Silicon | Semiconductor manufacturing method and semiconductor manufacturing apparatus |
| US6517634B2 (en) | 2000-02-28 | 2003-02-11 | Applied Materials, Inc. | Chemical vapor deposition chamber lid assembly |
| US6846711B2 (en) | 2000-03-02 | 2005-01-25 | Tokyo Electron Limited | Method of making a metal oxide capacitor, including a barrier film |
| US6644324B1 (en) | 2000-03-06 | 2003-11-11 | Cymer, Inc. | Laser discharge chamber passivation by plasma |
| US7419903B2 (en) | 2000-03-07 | 2008-09-02 | Asm International N.V. | Thin films |
| JP5016767B2 (ja) | 2000-03-07 | 2012-09-05 | エーエスエム インターナショナル エヌ．ヴェー． | 傾斜薄膜の形成方法 |
| JP4054159B2 (ja) | 2000-03-08 | 2008-02-27 | 東京エレクトロン株式会社 | 基板処理方法及びその装置 |
| TW492054B (en) | 2000-03-09 | 2002-06-21 | Semix Inc | Wafer processing apparatus and method |
| US6475902B1 (en) | 2000-03-10 | 2002-11-05 | Applied Materials, Inc. | Chemical vapor deposition of niobium barriers for copper metallization |
| WO2001069329A2 (en) | 2000-03-10 | 2001-09-20 | Cyrano Sciences, Inc. | Control for an industrial process using one or more multidimensional variables |
| JP3438696B2 (ja) | 2000-03-13 | 2003-08-18 | 松下電器産業株式会社 | プラズマ処理方法及び装置 |
| JP2001332609A (ja) | 2000-03-13 | 2001-11-30 | Nikon Corp | 基板保持装置及び露光装置 |
| US6506009B1 (en) | 2000-03-16 | 2003-01-14 | Applied Materials, Inc. | Apparatus for storing and moving a cassette |
| US6913796B2 (en) | 2000-03-20 | 2005-07-05 | Axcelis Technologies, Inc. | Plasma curing process for porous low-k materials |
| US6576300B1 (en) | 2000-03-20 | 2003-06-10 | Dow Corning Corporation | High modulus, low dielectric constant coatings |
| US6759098B2 (en) | 2000-03-20 | 2004-07-06 | Axcelis Technologies, Inc. | Plasma curing of MSQ-based porous low-k film materials |
| US6558755B2 (en) | 2000-03-20 | 2003-05-06 | Dow Corning Corporation | Plasma curing process for porous silica thin film |
| US6598559B1 (en) | 2000-03-24 | 2003-07-29 | Applied Materials, Inc. | Temperature controlled chamber |
| AT412302B (de) | 2000-03-28 | 2004-12-27 | Hoerbiger Ventilwerke Gmbh | Selbsttätiges ventil |
| JP3676983B2 (ja) | 2000-03-29 | 2005-07-27 | 株式会社日立国際電気 | 半導体製造方法、基板処理方法、及び半導体製造装置 |
| AU2001247685A1 (en) | 2000-03-30 | 2001-10-15 | Tokyo Electron Limited | Method of and apparatus for tunable gas injection in a plasma processing system |
| JP2001342570A (ja) | 2000-03-30 | 2001-12-14 | Hitachi Kokusai Electric Inc | 半導体装置の製造方法および半導体製造装置 |
| US6390905B1 (en) | 2000-03-31 | 2002-05-21 | Speedfam-Ipec Corporation | Workpiece carrier with adjustable pressure zones and barriers |
| JP2001345263A (ja) | 2000-03-31 | 2001-12-14 | Nikon Corp | 露光装置及び露光方法、並びにデバイス製造方法 |
| JP4281208B2 (ja) | 2000-04-04 | 2009-06-17 | ソニー株式会社 | ロボット遠隔制御システム |
| KR100360252B1 (ko) | 2000-04-06 | 2002-11-13 | 엘지전자 주식회사 | 진공청소기의 유로 시스템 |
| WO2001078115A2 (en) | 2000-04-06 | 2001-10-18 | Asm America, Inc. | Barrier coating for vitreous materials |
| US7011710B2 (en) | 2000-04-10 | 2006-03-14 | Applied Materials Inc. | Concentration profile on demand gas delivery system (individual divert delivery system) |
| FI117979B (fi) | 2000-04-14 | 2007-05-15 | Asm Int | Menetelmä oksidiohutkalvojen valmistamiseksi |
| TW576873B (en) | 2000-04-14 | 2004-02-21 | Asm Int | Method of growing a thin film onto a substrate |
| FI117978B (fi) | 2000-04-14 | 2007-05-15 | Asm Int | Menetelmä ja laitteisto ohutkalvon kasvattamiseksi alustalle |
| US6641350B2 (en) | 2000-04-17 | 2003-11-04 | Hitachi Kokusai Electric Inc. | Dual loading port semiconductor processing equipment |
| ATE518239T1 (de) | 2000-04-17 | 2011-08-15 | Mattson Tech Inc | Verfahren zur uv-vorbehandlung von ultradünnem oxynitrid zur herstellung von siliziumnitridschichten |
| TW503449B (en) | 2000-04-18 | 2002-09-21 | Ngk Insulators Ltd | Halogen gas plasma-resistive members and method for producing the same, laminates, and corrosion-resistant members |
| US6984591B1 (en) | 2000-04-20 | 2006-01-10 | International Business Machines Corporation | Precursor source mixtures |
| US6329297B1 (en) | 2000-04-21 | 2001-12-11 | Applied Materials, Inc. | Dilute remote plasma clean |
| US6635117B1 (en) | 2000-04-26 | 2003-10-21 | Axcelis Technologies, Inc. | Actively-cooled distribution plate for reducing reactive gas temperature in a plasma processing system |
| US6502530B1 (en) | 2000-04-26 | 2003-01-07 | Unaxis Balzers Aktiengesellschaft | Design of gas injection for the electrode in a capacitively coupled RF plasma reactor |
| US6387207B1 (en) | 2000-04-28 | 2002-05-14 | Applied Materials, Inc. | Integration of remote plasma generator with semiconductor processing chamber |
| US7141768B2 (en) | 2000-04-28 | 2006-11-28 | Nexicor, Llc | Fastening device |
| US6952656B1 (en) | 2000-04-28 | 2005-10-04 | Applied Materials, Inc. | Wafer fabrication data acquisition and management systems |
| JP2001313329A (ja) | 2000-04-28 | 2001-11-09 | Applied Materials Inc | 半導体製造装置におけるウェハ支持装置 |
| KR100367662B1 (ko) | 2000-05-02 | 2003-01-10 | 주식회사 셈테크놀러지 | 하이퍼서멀 중성입자 발생 장치 및 이를 채용하는 중성입자 처리 장치 |
| DE10021871A1 (de) | 2000-05-05 | 2001-11-15 | Infineon Technologies Ag | Verfahren zum Herstellen einer Barriereschicht in einem elektronischen Bauelement und Verfahren zum Herstellen eines elektronischen Bauelements mit einer Barriereschicht |
| JP2001319921A (ja) | 2000-05-09 | 2001-11-16 | Canon Inc | プロセスチャンバ |
| US20020195056A1 (en) | 2000-05-12 | 2002-12-26 | Gurtej Sandhu | Versatile atomic layer deposition apparatus |
| US6553932B2 (en) | 2000-05-12 | 2003-04-29 | Applied Materials, Inc. | Reduction of plasma edge effect on plasma enhanced CVD processes |
| US7494927B2 (en) | 2000-05-15 | 2009-02-24 | Asm International N.V. | Method of growing electrical conductors |
| JP4422295B2 (ja) | 2000-05-17 | 2010-02-24 | キヤノンアネルバ株式会社 | Ｃｖｄ装置 |
| US20020078893A1 (en) | 2000-05-18 | 2002-06-27 | Applied Materials , Inc. | Plasma enhanced chemical processing reactor and method |
| JP4449226B2 (ja) | 2000-05-22 | 2010-04-14 | 東京エレクトロン株式会社 | 金属酸化膜の改質方法、金属酸化膜の成膜方法及び熱処理装置 |
| US6387823B1 (en) | 2000-05-23 | 2002-05-14 | Advanced Micro Devices, Inc. | Method and apparatus for controlling deposition process using residual gas analysis |
| JP3448737B2 (ja) | 2000-05-25 | 2003-09-22 | 住友重機械工業株式会社 | ウエハーチャック用冷却板及びウエハーチャック |
| US6559026B1 (en) | 2000-05-25 | 2003-05-06 | Applied Materials, Inc | Trench fill with HDP-CVD process including coupled high power density plasma deposition |
| US6558517B2 (en) | 2000-05-26 | 2003-05-06 | Micron Technology, Inc. | Physical vapor deposition methods |
| TW578214B (en) | 2000-05-29 | 2004-03-01 | Tokyo Electron Ltd | Method of forming oxynitride film or the like and system for carrying out the same |
| US6645585B2 (en) | 2000-05-30 | 2003-11-11 | Kyocera Corporation | Container for treating with corrosive-gas and plasma and method for manufacturing the same |
| KR100783841B1 (ko) | 2000-05-31 | 2007-12-10 | 동경 엘렉트론 주식회사 | 열처리 시스템 |
| US6998097B1 (en) | 2000-06-07 | 2006-02-14 | Tegal Corporation | High pressure chemical vapor trapping system |
| EP1292970B1 (en) | 2000-06-08 | 2011-09-28 | Genitech Inc. | Thin film forming method |
| USD455024S1 (en) | 2000-06-09 | 2002-04-02 | Levenger Company | Portable writing surface |
| US6863019B2 (en) | 2000-06-13 | 2005-03-08 | Applied Materials, Inc. | Semiconductor device fabrication chamber cleaning method and apparatus with recirculation of cleaning gas |
| KR100406173B1 (ko) | 2000-06-13 | 2003-11-19 | 주식회사 하이닉스반도체 | 촉매 분사 수단을 구비한 히터 블록 |
| DE60123366T2 (de) | 2000-06-15 | 2007-08-23 | Koninklijke Philips Electronics N.V. | Halter für eine substratkassette und vorrichtung ausgerüstet mit diesem halter |
| US6461435B1 (en) | 2000-06-22 | 2002-10-08 | Applied Materials, Inc. | Showerhead with reduced contact area |
| US6346419B1 (en) | 2000-06-26 | 2002-02-12 | The United States Of America As Represented By The Department Of Commerce | Photolysis system for fast-response NO2 measurements and method therefor |
| US6620723B1 (en) | 2000-06-27 | 2003-09-16 | Applied Materials, Inc. | Formation of boride barrier layers using chemisorption techniques |
| KR100351056B1 (ko) | 2000-06-27 | 2002-09-05 | 삼성전자 주식회사 | 선택적 금속산화막 형성단계를 포함하는 반도체 소자의 제조방법 |
| JP4371543B2 (ja) | 2000-06-29 | 2009-11-25 | 日本電気株式会社 | リモートプラズマｃｖｄ装置及び膜形成方法 |
| KR100467366B1 (ko) | 2000-06-30 | 2005-01-24 | 주식회사 하이닉스반도체 | 원자층 증착법을 이용한 지르코늄산화막 형성방법 |
| US6632322B1 (en) | 2000-06-30 | 2003-10-14 | Lam Research Corporation | Switched uniformity control |
| KR100546138B1 (ko) | 2000-06-30 | 2006-01-24 | 주식회사 하이닉스반도체 | 신규한 포토레지스트 단량체, 그의 중합체 및 이를함유하는 포토레지스트 조성물 |
| US6874480B1 (en) | 2000-07-03 | 2005-04-05 | Combustion Dynamics Corp. | Flow meter |
| JP3589954B2 (ja) | 2000-07-04 | 2004-11-17 | シャープ株式会社 | 電磁波検出器、画像検出器、および電磁波検出器の製造方法 |
| EP1303729B1 (en) | 2000-07-06 | 2007-11-21 | Brooks Automation, Inc. | Item storage and retrieval system |
| JP3497450B2 (ja) | 2000-07-06 | 2004-02-16 | 東京エレクトロン株式会社 | バッチ式熱処理装置及びその制御方法 |
| US6835278B2 (en) | 2000-07-07 | 2004-12-28 | Mattson Technology Inc. | Systems and methods for remote plasma clean |
| JP3485896B2 (ja) | 2000-07-11 | 2004-01-13 | 東京エレクトロン株式会社 | プラズマ処理装置 |
| JP2002164342A (ja) | 2000-07-21 | 2002-06-07 | Canon Sales Co Inc | 半導体装置及びその製造方法 |
| AU2001288225A1 (en) | 2000-07-24 | 2002-02-05 | The University Of Maryland College Park | Spatially programmable microelectronics process equipment using segmented gas injection showerhead with exhaust gas recirculation |
| JP4357715B2 (ja) | 2000-07-24 | 2009-11-04 | 東京エレクトロン株式会社 | 熱処理装置の温度校正方法 |
| US6685991B2 (en) | 2000-07-31 | 2004-02-03 | Shin-Etsu Chemical Co., Ltd. | Method for formation of thermal-spray coating layer of rare earth fluoride |
| FR2812568B1 (fr) | 2000-08-01 | 2003-08-08 | Sidel Sa | Revetement barriere depose par plasma comprenant une couche d'interface, procede d'obtention d'un tel revetement et recipient revetu d'un tel revetement |
| US6450117B1 (en) | 2000-08-07 | 2002-09-17 | Applied Materials, Inc. | Directing a flow of gas in a substrate processing chamber |
| US6712929B1 (en) | 2000-08-08 | 2004-03-30 | Lam Research Corporation | Deformation reduction at the main chamber |
| US7223676B2 (en) | 2002-06-05 | 2007-05-29 | Applied Materials, Inc. | Very low temperature CVD process with independently variable conformality, stress and composition of the CVD layer |
| US7166524B2 (en) | 2000-08-11 | 2007-01-23 | Applied Materials, Inc. | Method for ion implanting insulator material to reduce dielectric constant |
| US7465478B2 (en) | 2000-08-11 | 2008-12-16 | Applied Materials, Inc. | Plasma immersion ion implantation process |
| KR100373853B1 (ko) | 2000-08-11 | 2003-02-26 | 삼성전자주식회사 | 반도체소자의 선택적 에피택시얼 성장 방법 |
| US20020136214A1 (en) | 2000-08-14 | 2002-09-26 | Consumer Direct Link | Pervasive computing network architecture |
| US6437290B1 (en) | 2000-08-17 | 2002-08-20 | Tokyo Electron Limited | Heat treatment apparatus having a thin light-transmitting window |
| DE60127973T2 (de) | 2000-08-18 | 2008-01-17 | Tokyo Electron Ltd. | Herstellungsprozess eines halbleiterbauelements mit einem zwischenfilm aus siliziumnitrid mit niedriger dielektrizitätskonstante |
| US6451692B1 (en) | 2000-08-18 | 2002-09-17 | Micron Technology, Inc. | Preheating of chemical vapor deposition precursors |
| US6630053B2 (en) | 2000-08-22 | 2003-10-07 | Asm Japan K.K. | Semiconductor processing module and apparatus |
| JP4150493B2 (ja) | 2000-08-22 | 2008-09-17 | 株式会社東芝 | パターン描画装置における温度測定方法 |
| JP4365017B2 (ja) | 2000-08-23 | 2009-11-18 | 東京エレクトロン株式会社 | 熱処理装置の降温レート制御方法および熱処理装置 |
| US6566278B1 (en) | 2000-08-24 | 2003-05-20 | Applied Materials Inc. | Method for densification of CVD carbon-doped silicon oxide films through UV irradiation |
| US6878906B2 (en) | 2000-08-30 | 2005-04-12 | Ibiden Co., Ltd. | Ceramic heater for semiconductor manufacturing and inspecting equipment |
| US6494998B1 (en) | 2000-08-30 | 2002-12-17 | Tokyo Electron Limited | Process apparatus and method for improving plasma distribution and performance in an inductively coupled plasma using an internal inductive element |
| US6784108B1 (en) | 2000-08-31 | 2004-08-31 | Micron Technology, Inc. | Gas pulsing for etch profile control |
| KR20020019414A (ko) | 2000-09-05 | 2002-03-12 | 엔도 마코토 | 기판 처리 장치 및 기판 처리 장치를 이용한 반도체디바이스 제조 방법 |
| USD449873S1 (en) | 2000-09-22 | 2001-10-30 | James Bronson | Garbage disposal strainer and splash guard |
| JP4232330B2 (ja) | 2000-09-22 | 2009-03-04 | 東京エレクトロン株式会社 | 励起ガス形成装置、処理装置及び処理方法 |
| JP3929261B2 (ja) | 2000-09-25 | 2007-06-13 | 株式会社日立国際電気 | 基板処理装置および基板処理方法 |
| JP3878972B2 (ja) | 2000-09-25 | 2007-02-07 | 東京エレクトロン株式会社 | 反応器の内部をクリーニングするため、ならびにケイ素含有化合物の膜をエッチングするためのガス組成物 |
| US6494065B2 (en) | 2000-09-26 | 2002-12-17 | Babbitt Steam Specialty Company | Valve lockout/tag out system |
| US6632068B2 (en) | 2000-09-27 | 2003-10-14 | Asm International N.V. | Wafer handling system |
| US6492625B1 (en) | 2000-09-27 | 2002-12-10 | Emcore Corporation | Apparatus and method for controlling temperature uniformity of substrates |
| KR100815009B1 (ko) | 2000-09-28 | 2008-03-18 | 프레지던트 앤드 펠로우즈 오브 하바드 칼리지 | 산화물, 규산염 및 인산염의 증기를 이용한 석출 |
| AU146327S (en) | 2000-09-29 | 2001-12-18 | American Standard Int Inc | Faucet |
| US6370796B1 (en) | 2000-09-29 | 2002-04-16 | Sony Corporation | Heater block cooling system for wafer processing apparatus |
| US6578893B2 (en) | 2000-10-02 | 2003-06-17 | Ajs Automation, Inc. | Apparatus and methods for handling semiconductor wafers |
| JP2002110570A (ja) | 2000-10-04 | 2002-04-12 | Asm Japan Kk | 半導体製造装置用ガスラインシステム |
| US6745095B1 (en) | 2000-10-04 | 2004-06-01 | Applied Materials, Inc. | Detection of process endpoint through monitoring fluctuation of output data |
| KR100492906B1 (ko) | 2000-10-04 | 2005-06-02 | 주식회사 하이닉스반도체 | 반도체소자의 층간절연막 형성 방법 |
| JP3572247B2 (ja) | 2000-10-06 | 2004-09-29 | 東芝セラミックス株式会社 | 半導体熱処理炉用ガス導入管 |
| US6660660B2 (en) | 2000-10-10 | 2003-12-09 | Asm International, Nv. | Methods for making a dielectric stack in an integrated circuit |
| US7204887B2 (en) | 2000-10-16 | 2007-04-17 | Nippon Steel Corporation | Wafer holding, wafer support member, wafer boat and heat treatment furnace |
| TW541425B (en) | 2000-10-20 | 2003-07-11 | Ebara Corp | Frequency measuring device, polishing device using the same and eddy current sensor |
| TW548239B (en) | 2000-10-23 | 2003-08-21 | Asm Microchemistry Oy | Process for producing aluminium oxide films at low temperatures |
| JP4156788B2 (ja) | 2000-10-23 | 2008-09-24 | 日本碍子株式会社 | 半導体製造装置用サセプター |
| US6395650B1 (en) | 2000-10-23 | 2002-05-28 | International Business Machines Corporation | Methods for forming metal oxide layers with enhanced purity |
| US6824665B2 (en) | 2000-10-25 | 2004-11-30 | Shipley Company, L.L.C. | Seed layer deposition |
| US6688784B1 (en) | 2000-10-25 | 2004-02-10 | Advanced Micro Devices, Inc. | Parallel plate development with multiple holes in top plate for control of developer flow and pressure |
| JP3910821B2 (ja) | 2000-10-26 | 2007-04-25 | 東京エレクトロン株式会社 | 基板の処理装置 |
| JP3408527B2 (ja) | 2000-10-26 | 2003-05-19 | 松下電器産業株式会社 | 半導体装置の製造方法 |
| US6445574B1 (en) | 2000-10-30 | 2002-09-03 | Motorola, Inc. | Electronic device |
| US6498091B1 (en) | 2000-11-01 | 2002-12-24 | Applied Materials, Inc. | Method of using a barrier sputter reactor to remove an underlying barrier layer |
| US7032614B2 (en) | 2000-11-03 | 2006-04-25 | Applied Materials, Inc. | Facilities connection box for pre-facilitation of wafer fabrication equipment |
| US6649540B2 (en) | 2000-11-09 | 2003-11-18 | The Boc Group, Inc. | Organosilane CVD precursors and their use for making organosilane polymer low-k dielectric film |
| JP4669605B2 (ja) | 2000-11-20 | 2011-04-13 | 東京エレクトロン株式会社 | 半導体製造装置のクリーニング方法 |
| JP2002158178A (ja) | 2000-11-21 | 2002-05-31 | Hitachi Kokusai Electric Inc | 基板処理装置および半導体装置の製造方法 |
| US6689220B1 (en) | 2000-11-22 | 2004-02-10 | Simplus Systems Corporation | Plasma enhanced pulsed layer deposition |
| US6613695B2 (en) | 2000-11-24 | 2003-09-02 | Asm America, Inc. | Surface preparation prior to deposition |
| US20020064592A1 (en) | 2000-11-29 | 2002-05-30 | Madhav Datta | Electroless method of seed layer depostion, repair, and fabrication of Cu interconnects |
| KR100688484B1 (ko) | 2000-11-30 | 2007-02-28 | 삼성전자주식회사 | 활성화 산소를 이용하여 기판을 처리하는 장치 및 그 방법 |
| JP3610900B2 (ja) | 2000-11-30 | 2005-01-19 | 東京エレクトロン株式会社 | 熱処理装置 |
| US20020069222A1 (en) | 2000-12-01 | 2002-06-06 | Wiznet, Inc. | System and method for placing active tags in HTML document |
| JP3650025B2 (ja) | 2000-12-04 | 2005-05-18 | シャープ株式会社 | プラズマプロセス装置 |
| JP3939101B2 (ja) | 2000-12-04 | 2007-07-04 | 株式会社荏原製作所 | 基板搬送方法および基板搬送容器 |
| US6913152B2 (en) | 2000-12-04 | 2005-07-05 | Peter Zuk, Jr. | Disposable vacuum filtration apparatus capable of detecting microorganisms and particulates in liquid samples |
| JP2002237375A (ja) | 2000-12-05 | 2002-08-23 | Ibiden Co Ltd | 半導体製造・検査装置用セラミック基板およびその製造方法 |
| KR100886997B1 (ko) | 2000-12-05 | 2009-03-04 | 도쿄엘렉트론가부시키가이샤 | 피처리체의 처리방법 및 처리장치 |
| US6428859B1 (en) | 2000-12-06 | 2002-08-06 | Angstron Systems, Inc. | Sequential method for depositing a film by modulated ion-induced atomic layer deposition (MII-ALD) |
| US6949450B2 (en) | 2000-12-06 | 2005-09-27 | Novellus Systems, Inc. | Method for integrated in-situ cleaning and subsequent atomic layer deposition within a single processing chamber |
| KR100385947B1 (ko) | 2000-12-06 | 2003-06-02 | 삼성전자주식회사 | 원자층 증착 방법에 의한 박막 형성 방법 |
| US7871676B2 (en) | 2000-12-06 | 2011-01-18 | Novellus Systems, Inc. | System for depositing a film by modulated ion-induced atomic layer deposition (MII-ALD) |
| US6878402B2 (en) | 2000-12-06 | 2005-04-12 | Novellus Systems, Inc. | Method and apparatus for improved temperature control in atomic layer deposition |
| US20020104481A1 (en) | 2000-12-06 | 2002-08-08 | Chiang Tony P. | System and method for modulated ion-induced atomic layer deposition (MII-ALD) |
| US20020197402A1 (en) | 2000-12-06 | 2002-12-26 | Chiang Tony P. | System for depositing a film by modulated ion-induced atomic layer deposition (MII-ALD) |
| US6413321B1 (en) | 2000-12-07 | 2002-07-02 | Applied Materials, Inc. | Method and apparatus for reducing particle contamination on wafer backside during CVD process |
| US6930041B2 (en) | 2000-12-07 | 2005-08-16 | Micron Technology, Inc. | Photo-assisted method for semiconductor fabrication |
| US6576564B2 (en) | 2000-12-07 | 2003-06-10 | Micron Technology, Inc. | Photo-assisted remote plasma apparatus and method |
| TWI313059B (zh) | 2000-12-08 | 2009-08-01 | Sony Corporatio | |
| AU2002221122A1 (en) | 2000-12-12 | 2002-06-24 | Tokyo Electron Limited | Thin film forming method and thin film forming device |
| US6692903B2 (en) | 2000-12-13 | 2004-02-17 | Applied Materials, Inc | Substrate cleaning apparatus and method |
| US6814096B2 (en) | 2000-12-15 | 2004-11-09 | Nor-Cal Products, Inc. | Pressure controller and method |
| US20020076507A1 (en) | 2000-12-15 | 2002-06-20 | Chiang Tony P. | Process sequence for atomic layer deposition |
| US6800173B2 (en) | 2000-12-15 | 2004-10-05 | Novellus Systems, Inc. | Variable gas conductance control for a process chamber |
| US6641673B2 (en) | 2000-12-20 | 2003-11-04 | General Electric Company | Fluid injector for and method of prolonged delivery and distribution of reagents into plasma |
| US6544906B2 (en) | 2000-12-21 | 2003-04-08 | Texas Instruments Incorporated | Annealing of high-k dielectric materials |
| US7015422B2 (en) | 2000-12-21 | 2006-03-21 | Mattson Technology, Inc. | System and process for heating semiconductor wafers by optimizing absorption of electromagnetic energy |
| US20020152244A1 (en) | 2000-12-22 | 2002-10-17 | International Business Machines Corporation | Method and apparatus to dynamically create a customized user interface based on a document type definition |
| US20020151327A1 (en) | 2000-12-22 | 2002-10-17 | David Levitt | Program selector and guide system and method |
| US6634882B2 (en) | 2000-12-22 | 2003-10-21 | Asm America, Inc. | Susceptor pocket profile to improve process performance |
| JP5068402B2 (ja) | 2000-12-28 | 2012-11-07 | 公益財団法人国際科学振興財団 | 誘電体膜およびその形成方法、半導体装置、不揮発性半導体メモリ装置、および半導体装置の製造方法 |
| US6537429B2 (en) | 2000-12-29 | 2003-03-25 | Lam Research Corporation | Diamond coatings on reactor wall and method of manufacturing thereof |
| US6398184B1 (en) | 2000-12-29 | 2002-06-04 | General Signal Corporation | Lock device and lock method for knife gate valves |
| US6533910B2 (en) | 2000-12-29 | 2003-03-18 | Lam Research Corporation | Carbonitride coated component of semiconductor processing equipment and method of manufacturing thereof |
| US7172497B2 (en) | 2001-01-05 | 2007-02-06 | Asm Nutool, Inc. | Fabrication of semiconductor interconnect structures |
| US6572923B2 (en) | 2001-01-12 | 2003-06-03 | The Boc Group, Inc. | Asymmetric organocyclosiloxanes and their use for making organosilicon polymer low-k dielectric film |
| JP4633269B2 (ja) | 2001-01-15 | 2011-02-16 | 株式会社日立国際電気 | 基板処理装置及び半導体装置の製造方法 |
| US6583048B2 (en) | 2001-01-17 | 2003-06-24 | Air Products And Chemicals, Inc. | Organosilicon precursors for interlayer dielectric films with low dielectric constants |
| JP3625197B2 (ja) | 2001-01-18 | 2005-03-02 | 東京エレクトロン株式会社 | プラズマ装置およびプラズマ生成方法 |
| US7087482B2 (en) | 2001-01-19 | 2006-08-08 | Samsung Electronics Co., Ltd. | Method of forming material using atomic layer deposition and method of forming capacitor of semiconductor device using the same |
| KR20070116696A (ko) | 2001-01-22 | 2007-12-10 | 동경 엘렉트론 주식회사 | 전자 디바이스 재료의 제조 방법 및 플라즈마 처리 방법 |
| JP4644943B2 (ja) | 2001-01-23 | 2011-03-09 | 東京エレクトロン株式会社 | 処理装置 |
| CN101752244B (zh) | 2001-01-25 | 2012-02-08 | 东京毅力科创株式会社 | 等离子体处理方法 |
| JP4429300B2 (ja) | 2001-01-25 | 2010-03-10 | 東京エレクトロン株式会社 | 電子デバイス材料の製造方法 |
| US6660662B2 (en) | 2001-01-26 | 2003-12-09 | Applied Materials, Inc. | Method of reducing plasma charge damage for plasma processes |
| KR20020064028A (ko) | 2001-01-31 | 2002-08-07 | 한빛 세마텍(주) | 펄스형 자외선조사에 의한 세정 및 표면처리 장치 |
| US7371633B2 (en) | 2001-02-02 | 2008-05-13 | Samsung Electronics Co., Ltd. | Dielectric layer for semiconductor device and method of manufacturing the same |
| US6844273B2 (en) | 2001-02-07 | 2005-01-18 | Tokyo Electron Limited | Precleaning method of precleaning a silicon nitride film forming system |
| WO2002063535A2 (en) | 2001-02-07 | 2002-08-15 | Exalt Solutions, Inc. | Intelligent multimedia e-catalog |
| US6589868B2 (en) | 2001-02-08 | 2003-07-08 | Applied Materials, Inc. | Si seasoning to reduce particles, extend clean frequency, block mobile ions and increase chamber throughput |
| JP3626933B2 (ja) | 2001-02-08 | 2005-03-09 | 東京エレクトロン株式会社 | 基板載置台の製造方法 |
| JP2005033221A (ja) | 2001-02-08 | 2005-02-03 | Tokyo Electron Ltd | 基板載置台および処理装置 |
| US20020108670A1 (en) | 2001-02-12 | 2002-08-15 | Baker John Eric | High purity chemical container with external level sensor and removable dip tube |
| AU2002306436A1 (en) | 2001-02-12 | 2002-10-15 | Asm America, Inc. | Improved process for deposition of semiconductor films |
| US7072061B2 (en) | 2001-02-13 | 2006-07-04 | Ariba, Inc. | Method and system for extracting information from RFQ documents and compressing RFQ files into a common RFQ file type |
| US6613656B2 (en) | 2001-02-13 | 2003-09-02 | Micron Technology, Inc. | Sequential pulse deposition |
| CN101038863B (zh) | 2001-02-15 | 2011-07-06 | 东京毅力科创株式会社 | 被处理件的处理方法及处理装置 |
| US6632478B2 (en) | 2001-02-22 | 2003-10-14 | Applied Materials, Inc. | Process for forming a low dielectric constant carbon-containing film |
| KR100410991B1 (ko) | 2001-02-22 | 2003-12-18 | 삼성전자주식회사 | 반도체 제조장치의 로드포트 |
| JP3494435B2 (ja) | 2001-02-27 | 2004-02-09 | 東京エレクトロン株式会社 | 基板処理装置 |
| TW544775B (en) | 2001-02-28 | 2003-08-01 | Japan Pionics | Chemical vapor deposition apparatus and chemical vapor deposition method |
| US6852167B2 (en) | 2001-03-01 | 2005-02-08 | Micron Technology, Inc. | Methods, systems, and apparatus for uniform chemical-vapor depositions |
| US6878206B2 (en) | 2001-07-16 | 2005-04-12 | Applied Materials, Inc. | Lid assembly for a processing system to facilitate sequential deposition techniques |
| JP4487135B2 (ja) | 2001-03-05 | 2010-06-23 | 東京エレクトロン株式会社 | 流体制御装置 |
| US20020123237A1 (en) | 2001-03-05 | 2002-09-05 | Tue Nguyen | Plasma pulse semiconductor processing system and method |
| US7491634B2 (en) | 2006-04-28 | 2009-02-17 | Asm International N.V. | Methods for forming roughened surfaces and applications thereof |
| US7563715B2 (en) | 2005-12-05 | 2009-07-21 | Asm International N.V. | Method of producing thin films |
| US7111232B1 (en) | 2001-03-07 | 2006-09-19 | Thomas Layne Bascom | Method and system for making document objects available to users of a network |
| US6447651B1 (en) | 2001-03-07 | 2002-09-10 | Applied Materials, Inc. | High-permeability magnetic shield for improved process uniformity in nonmagnetized plasma process chambers |
| US6939579B2 (en) | 2001-03-07 | 2005-09-06 | Asm International N.V. | ALD reactor and method with controlled wall temperature |
| US6939206B2 (en) | 2001-03-12 | 2005-09-06 | Asm Nutool, Inc. | Method and apparatus of sealing wafer backside for full-face electrochemical plating |
| US6855037B2 (en) | 2001-03-12 | 2005-02-15 | Asm-Nutool, Inc. | Method of sealing wafer backside for full-face electrochemical plating |
| US7186648B1 (en) | 2001-03-13 | 2007-03-06 | Novellus Systems, Inc. | Barrier first method for single damascene trench applications |
| US20020129768A1 (en) | 2001-03-15 | 2002-09-19 | Carpenter Craig M. | Chemical vapor deposition apparatuses and deposition methods |
| US7348042B2 (en) | 2001-03-19 | 2008-03-25 | Novellus Systems, Inc. | Continuous method for depositing a film by modulated ion-induced atomic layer deposition (MII-ALD) |
| JP3912993B2 (ja) | 2001-03-26 | 2007-05-09 | 株式会社荏原製作所 | 中性粒子ビーム処理装置 |
| JP4073174B2 (ja) | 2001-03-26 | 2008-04-09 | 株式会社荏原製作所 | 中性粒子ビーム処理装置 |
| JP4727057B2 (ja) | 2001-03-28 | 2011-07-20 | 忠弘 大見 | プラズマ処理装置 |
| US6716571B2 (en) | 2001-03-28 | 2004-04-06 | Advanced Micro Devices, Inc. | Selective photoresist hardening to facilitate lateral trimming |
| US6723654B2 (en) | 2001-03-30 | 2004-04-20 | Taiwan Semiconductor Manufacturing Co., Ltd | Method and apparatus for in-situ descum/hot bake/dry etch photoresist/polyimide layer |
| US6583572B2 (en) | 2001-03-30 | 2003-06-24 | Lam Research Corporation | Inductive plasma processor including current sensor for plasma excitation coil |
| TW540093B (en) | 2001-04-05 | 2003-07-01 | Angstron Systems Inc | Atomic layer deposition system and method |
| US6902622B2 (en) | 2001-04-12 | 2005-06-07 | Mattson Technology, Inc. | Systems and methods for epitaxially depositing films on a semiconductor substrate |
| US6448192B1 (en) | 2001-04-16 | 2002-09-10 | Motorola, Inc. | Method for forming a high dielectric constant material |
| US6521295B1 (en) | 2001-04-17 | 2003-02-18 | Pilkington North America, Inc. | Chemical vapor deposition of antimony-doped metal oxide and the coated article made thereby |
| US7125783B2 (en) | 2001-04-18 | 2006-10-24 | Integrated Device Technology, Inc. | Dielectric anti-reflective coating surface treatment to prevent defect generation in associated wet clean |
| JP2002317287A (ja) | 2001-04-18 | 2002-10-31 | Permelec Electrode Ltd | 過酸化水素製造用電解槽及び過酸化水素製造方法 |
| US6482331B2 (en) | 2001-04-18 | 2002-11-19 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method for preventing contamination in a plasma process chamber |
| TW538327B (en) | 2001-04-24 | 2003-06-21 | Unit Instr Inc | System and method for a mass flow controller |
| US6753507B2 (en) | 2001-04-27 | 2004-06-22 | Kyocera Corporation | Wafer heating apparatus |
| US20030019428A1 (en) | 2001-04-28 | 2003-01-30 | Applied Materials, Inc. | Chemical vapor deposition chamber |
| US6847014B1 (en) | 2001-04-30 | 2005-01-25 | Lam Research Corporation | Method and apparatus for controlling the spatial temperature distribution across the surface of a workpiece support |
| US6528430B2 (en) | 2001-05-01 | 2003-03-04 | Samsung Electronics Co., Ltd. | Method of forming silicon containing thin films by atomic layer deposition utilizing Si2C16 and NH3 |
| US6864041B2 (en) | 2001-05-02 | 2005-03-08 | International Business Machines Corporation | Gate linewidth tailoring and critical dimension control for sub-100 nm devices using plasma etching |
| US6627268B1 (en) | 2001-05-03 | 2003-09-30 | Novellus Systems, Inc. | Sequential ion, UV, and electron induced chemical vapor deposition |
| US6602800B2 (en) | 2001-05-09 | 2003-08-05 | Asm Japan K.K. | Apparatus for forming thin film on semiconductor substrate by plasma reaction |
| KR20020086763A (ko) | 2001-05-10 | 2002-11-20 | 주식회사 엘지이아이 | 플라즈마를 이용한 연속중합장치용 열전대 |
| US6596653B2 (en) | 2001-05-11 | 2003-07-22 | Applied Materials, Inc. | Hydrogen assisted undoped silicon oxide deposition process for HDP-CVD |
| JP2003053688A (ja) | 2001-05-15 | 2003-02-26 | Fanuc Robotics North America Inc | 教示ペンダントを有するロボット・システム |
| DE10156441A1 (de) | 2001-05-18 | 2002-11-21 | Mattson Thermal Products Gmbh | Vorrichtung zur Aufnahme von scheibenförmigen Objekten und Vorrichtung zur Handhabung von Objekten |
| JP2002343790A (ja) | 2001-05-21 | 2002-11-29 | Nec Corp | 金属化合物薄膜の気相堆積方法及び半導体装置の製造方法 |
| US6528767B2 (en) | 2001-05-22 | 2003-03-04 | Applied Materials, Inc. | Pre-heating and load lock pedestal material for high temperature CVD liquid crystal and flat panel display applications |
| US7262125B2 (en) | 2001-05-22 | 2007-08-28 | Novellus Systems, Inc. | Method of forming low-resistivity tungsten interconnects |
| US7037574B2 (en) | 2001-05-23 | 2006-05-02 | Veeco Instruments, Inc. | Atomic layer deposition for fabricating thin films |
| US6810886B2 (en) | 2001-05-24 | 2004-11-02 | Applied Materials, Inc. | Chamber cleaning via rapid thermal process during a cleaning period |
| US20020181612A1 (en) | 2001-05-29 | 2002-12-05 | Motorola, Inc. | Monolithic, software-definable circuit including a power amplifier and method for use therewith |
| US7159597B2 (en) | 2001-06-01 | 2007-01-09 | Applied Materials, Inc. | Multistep remote plasma clean process |
| GB0113735D0 (en) | 2001-06-05 | 2001-07-25 | Holset Engineering Co | Mixing fluid streams |
| US6758909B2 (en) | 2001-06-05 | 2004-07-06 | Honeywell International Inc. | Gas port sealing for CVD/CVI furnace hearth plates |
| JP3421329B2 (ja) | 2001-06-08 | 2003-06-30 | 東京エレクトロン株式会社 | 薄膜形成装置の洗浄方法 |
| US6955928B1 (en) | 2001-06-18 | 2005-10-18 | Advanced Micro Devices, Inc. | Closed loop residual gas analyzer process control technique |
| US6472266B1 (en) | 2001-06-18 | 2002-10-29 | Taiwan Semiconductor Manufacturing Company | Method to reduce bit line capacitance in cub drams |
| DE10129630A1 (de) | 2001-06-20 | 2003-01-02 | Philips Corp Intellectual Pty | Niederdruckgasentladungslampe mit Leuchtstoffbeschichtung |
| US6391803B1 (en) | 2001-06-20 | 2002-05-21 | Samsung Electronics Co., Ltd. | Method of forming silicon containing thin films by atomic layer deposition utilizing trisdimethylaminosilane |
| US6709989B2 (en) | 2001-06-21 | 2004-03-23 | Motorola, Inc. | Method for fabricating a semiconductor structure including a metal oxide interface with silicon |
| US6658933B2 (en) | 2001-06-22 | 2003-12-09 | Clesse Industries | Fill-level indicator for a liquefied-petroleum-gas tank |
| US6514313B1 (en) | 2001-06-22 | 2003-02-04 | Aeronex, Inc. | Gas purification system and method |
| US20030002562A1 (en) | 2001-06-27 | 2003-01-02 | Yerlikaya Y. Denis | Temperature probe adapter |
| US6420279B1 (en) | 2001-06-28 | 2002-07-16 | Sharp Laboratories Of America, Inc. | Methods of using atomic layer deposition to deposit a high dielectric constant material on a substrate |
| KR20030001939A (ko) | 2001-06-28 | 2003-01-08 | 동부전자 주식회사 | 반도체소자의 장벽층 형성 방법 및 장치 |
| US20030000647A1 (en) | 2001-06-29 | 2003-01-02 | Applied Materials, Inc. | Substrate processing chamber |
| US20030003696A1 (en) | 2001-06-29 | 2003-01-02 | Avgerinos Gelatos | Method and apparatus for tuning a plurality of processing chambers |
| JP3708031B2 (ja) | 2001-06-29 | 2005-10-19 | 株式会社日立製作所 | プラズマ処理装置および処理方法 |
| TW539822B (en) | 2001-07-03 | 2003-07-01 | Asm Inc | Source chemical container assembly |
| DE10133013C2 (de) | 2001-07-06 | 2003-07-03 | Karlsruhe Forschzent | Verschluss für Hohlräume oder Durchführungen |
| US20030013314A1 (en) | 2001-07-06 | 2003-01-16 | Chentsau Ying | Method of reducing particulates in a plasma etch chamber during a metal etch process |
| JP4133810B2 (ja) | 2001-07-10 | 2008-08-13 | 東京エレクトロン株式会社 | ドライエッチング方法 |
| US6746308B1 (en) | 2001-07-11 | 2004-06-08 | Advanced Micro Devices, Inc. | Dynamic lot allocation based upon wafer state characteristics, and system for accomplishing same |
| US20030017266A1 (en) | 2001-07-13 | 2003-01-23 | Cem Basceri | Chemical vapor deposition methods of forming barium strontium titanate comprising dielectric layers, including such layers having a varied concentration of barium and strontium within the layer |
| US6868856B2 (en) | 2001-07-13 | 2005-03-22 | Applied Materials, Inc. | Enhanced remote plasma cleaning |
| US6838122B2 (en) | 2001-07-13 | 2005-01-04 | Micron Technology, Inc. | Chemical vapor deposition methods of forming barium strontium titanate comprising dielectric layers |
| KR100400044B1 (ko) | 2001-07-16 | 2003-09-29 | 삼성전자주식회사 | 간격 조절 장치를 가지는 웨이퍼 처리 장치의 샤워 헤드 |
| US20030017268A1 (en) | 2001-07-18 | 2003-01-23 | Applied Materials, Inc. | .method of cvd titanium nitride film deposition for increased titanium nitride film uniformity |
| JP3926588B2 (ja) | 2001-07-19 | 2007-06-06 | キヤノンマーケティングジャパン株式会社 | 半導体装置の製造方法 |
| FR2827682B1 (fr) | 2001-07-20 | 2004-04-02 | Gemplus Card Int | Regulation de pression par transfert d'un volume de gaz calibre |
| US6712949B2 (en) | 2001-07-22 | 2004-03-30 | The Electrosynthesis Company, Inc. | Electrochemical synthesis of hydrogen peroxide |
| JP2003035574A (ja) | 2001-07-23 | 2003-02-07 | Mitsubishi Heavy Ind Ltd | 応答型センサ及び応用計測システム |
| US6677254B2 (en) | 2001-07-23 | 2004-01-13 | Applied Materials, Inc. | Processes for making a barrier between a dielectric and a conductor and products produced therefrom |
| US20080268635A1 (en) | 2001-07-25 | 2008-10-30 | Sang-Ho Yu | Process for forming cobalt and cobalt silicide materials in copper contact applications |
| US6638839B2 (en) | 2001-07-26 | 2003-10-28 | The University Of Toledo | Hot-filament chemical vapor deposition chamber and process with multiple gas inlets |
| US7085616B2 (en) | 2001-07-27 | 2006-08-01 | Applied Materials, Inc. | Atomic layer deposition apparatus |
| US6435865B1 (en) | 2001-07-30 | 2002-08-20 | Taiwan Semiconductor Manufacturing Co., Ltd. | Apparatus and method for positioning gas injectors in a vertical furnace |
| WO2003012843A1 (fr) | 2001-07-31 | 2003-02-13 | L'air Liquide, Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude | Procede et appareil de nettoyage et procede et appareil de gravure |
| TWI224815B (en) | 2001-08-01 | 2004-12-01 | Tokyo Electron Ltd | Gas processing apparatus and gas processing method |
| JP3958539B2 (ja) | 2001-08-02 | 2007-08-15 | 東京エレクトロン株式会社 | 基板処理装置及び基板処理方法 |
| US6896929B2 (en) | 2001-08-03 | 2005-05-24 | Applied Materials, Inc. | Susceptor shaft vacuum pumping |
| JP4921652B2 (ja) | 2001-08-03 | 2012-04-25 | エイエスエム インターナショナル エヌ．ヴェー． | イットリウム酸化物およびランタン酸化物薄膜を堆積する方法 |
| US6678583B2 (en) | 2001-08-06 | 2004-01-13 | Seminet, Inc. | Robotic storage buffer system for substrate carrier pods |
| JP4666912B2 (ja) | 2001-08-06 | 2011-04-06 | エー・エス・エムジニテックコリア株式会社 | プラズマで補強した原子層蒸着装置及びこれを利用した薄膜形成方法 |
| JP2003060012A (ja) | 2001-08-08 | 2003-02-28 | Asm Japan Kk | 半導体処理用反応チャンバ |
| JP3775262B2 (ja) | 2001-08-09 | 2006-05-17 | ヤマハ株式会社 | 電子楽器及び電子楽器システム |
| US6734111B2 (en) | 2001-08-09 | 2004-05-11 | Comlase Ab | Method to GaAs based lasers and a GaAs based laser |
| TW559905B (en) | 2001-08-10 | 2003-11-01 | Toshiba Corp | Vertical chemical vapor deposition system cross-reference to related applications |
| US6531412B2 (en) | 2001-08-10 | 2003-03-11 | International Business Machines Corporation | Method for low temperature chemical vapor deposition of low-k films using selected cyclosiloxane and ozone gases for semiconductor applications |
| US20030029563A1 (en) | 2001-08-10 | 2003-02-13 | Applied Materials, Inc. | Corrosion resistant coating for semiconductor processing chamber |
| JP2003059999A (ja) | 2001-08-14 | 2003-02-28 | Tokyo Electron Ltd | 処理システム |
| US6820570B2 (en) | 2001-08-15 | 2004-11-23 | Nobel Biocare Services Ag | Atomic layer deposition reactor |
| US20030035002A1 (en) | 2001-08-15 | 2003-02-20 | Samsung Electronics Co., Ltd. | Alternate interpretation of markup language documents |
| USD699816S1 (en) | 2001-08-17 | 2014-02-18 | Neoperl Gmbh | Stream straightener for faucet |
| JP2003060076A (ja) | 2001-08-21 | 2003-02-28 | Nec Corp | 半導体装置及びその製造方法 |
| KR100604751B1 (ko) | 2001-08-24 | 2006-07-26 | 주식회사 하이닉스반도체 | 산 확산 방지용 포토레지스트 공중합체 및 이를 함유하는포토레지스트 조성물 |
| US20030037800A1 (en) | 2001-08-27 | 2003-02-27 | Applied Materials, Inc. | Method for removing contamination particles from substrate processing chambers |
| KR20030018134A (ko) | 2001-08-27 | 2003-03-06 | 한국전자통신연구원 | 조성과 도핑 농도의 제어를 위한 반도체 소자의 절연막형성 방법 |
| JP3886424B2 (ja) | 2001-08-28 | 2007-02-28 | 鹿児島日本電気株式会社 | 基板処理装置及び方法 |
| JP3832294B2 (ja) | 2001-08-31 | 2006-10-11 | 株式会社ダイフク | 荷保管設備 |
| JP2003077782A (ja) | 2001-08-31 | 2003-03-14 | Toshiba Corp | 半導体装置の製造方法 |
| JP3832293B2 (ja) | 2001-08-31 | 2006-10-11 | 株式会社ダイフク | 荷保管設備 |
| JP4460803B2 (ja) | 2001-09-05 | 2010-05-12 | パナソニック株式会社 | 基板表面処理方法 |
| JP2003077845A (ja) | 2001-09-05 | 2003-03-14 | Hitachi Kokusai Electric Inc | 半導体装置の製造方法および基板処理装置 |
| JP2003158127A (ja) | 2001-09-07 | 2003-05-30 | Arieesu Gijutsu Kenkyu Kk | 成膜方法、成膜装置、及び半導体装置 |
| US6521547B1 (en) | 2001-09-07 | 2003-02-18 | United Microelectronics Corp. | Method of repairing a low dielectric constant material layer |
| US6756318B2 (en) | 2001-09-10 | 2004-06-29 | Tegal Corporation | Nanolayer thick film processing system and method |
| US9708707B2 (en) | 2001-09-10 | 2017-07-18 | Asm International N.V. | Nanolayer deposition using bias power treatment |
| JP4094262B2 (ja) | 2001-09-13 | 2008-06-04 | 住友大阪セメント株式会社 | 吸着固定装置及びその製造方法 |
| JP4938962B2 (ja) | 2001-09-14 | 2012-05-23 | エーエスエム インターナショナル エヌ．ヴェー． | ゲッタリング反応物を用いるａｌｄによる金属窒化物堆積 |
| US6756085B2 (en) | 2001-09-14 | 2004-06-29 | Axcelis Technologies, Inc. | Ultraviolet curing processes for advanced low-k materials |
| US6541370B1 (en) | 2001-09-17 | 2003-04-01 | Taiwan Semiconductor Manufacturing Co., Ltd. | Composite microelectronic dielectric layer with inhibited crack susceptibility |
| JP2003100717A (ja) | 2001-09-21 | 2003-04-04 | Tokyo Electron Ltd | プラズマ処理装置 |
| US20030059535A1 (en) | 2001-09-25 | 2003-03-27 | Lee Luo | Cycling deposition of low temperature films in a cold wall single wafer process chamber |
| US6607976B2 (en) | 2001-09-25 | 2003-08-19 | Applied Materials, Inc. | Copper interconnect barrier layer structure and formation method |
| US7049226B2 (en) | 2001-09-26 | 2006-05-23 | Applied Materials, Inc. | Integration of ALD tantalum nitride for copper metallization |
| US6782305B2 (en) | 2001-10-01 | 2004-08-24 | Massachusetts Institute Of Technology | Method of geometric information sharing and parametric consistency maintenance in a collaborative design environment |
| US6720259B2 (en) | 2001-10-02 | 2004-04-13 | Genus, Inc. | Passivation method for improved uniformity and repeatability for atomic layer deposition and chemical vapor deposition |
| US6960537B2 (en) | 2001-10-02 | 2005-11-01 | Asm America, Inc. | Incorporation of nitrogen into high k dielectric film |
| KR100431658B1 (ko) | 2001-10-05 | 2004-05-17 | 삼성전자주식회사 | 기판 가열 장치 및 이를 갖는 장치 |
| US6656282B2 (en) | 2001-10-11 | 2003-12-02 | Moohan Co., Ltd. | Atomic layer deposition apparatus and process using remote plasma |
| US6461436B1 (en) | 2001-10-15 | 2002-10-08 | Micron Technology, Inc. | Apparatus and process of improving atomic layer deposition chamber performance |
| US6936183B2 (en) | 2001-10-17 | 2005-08-30 | Applied Materials, Inc. | Etch process for etching microstructures |
| JP2003133299A (ja) | 2001-10-24 | 2003-05-09 | Oki Electric Ind Co Ltd | 半導体製造装置および半導体製造方法 |
| US6916398B2 (en) | 2001-10-26 | 2005-07-12 | Applied Materials, Inc. | Gas delivery apparatus and method for atomic layer deposition |
| US20080102203A1 (en) | 2001-10-26 | 2008-05-01 | Dien-Yeh Wu | Vortex chamber lids for atomic layer deposition |
| JP4615859B2 (ja) | 2001-10-26 | 2011-01-19 | アプライド マテリアルズ インコーポレイテッド | 原子層堆積のためのガス配送装置 |
| US7780785B2 (en) | 2001-10-26 | 2010-08-24 | Applied Materials, Inc. | Gas delivery apparatus for atomic layer deposition |
| US20080102208A1 (en) | 2001-10-26 | 2008-05-01 | Dien-Yeh Wu | Vortex chamber lids for atomic layer deposition |
| US7780789B2 (en) | 2001-10-26 | 2010-08-24 | Applied Materials, Inc. | Vortex chamber lids for atomic layer deposition |
| JP2003133300A (ja) | 2001-10-26 | 2003-05-09 | Tokyo Electron Ltd | 成膜装置及び成膜方法 |
| WO2003038145A2 (en) | 2001-10-29 | 2003-05-08 | Genus, Inc. | Chemical vapor deposition system |
| US20040253867A1 (en) | 2001-11-05 | 2004-12-16 | Shuzo Matsumoto | Circuit part connector structure and gasket |
| US20050054198A1 (en) | 2001-11-05 | 2005-03-10 | Um Pyung Yong | Apparatus of chemical vapor deposition |
| KR100782529B1 (ko) | 2001-11-08 | 2007-12-06 | 에이에스엠지니텍코리아 주식회사 | 증착 장치 |
| KR100760291B1 (ko) | 2001-11-08 | 2007-09-19 | 에이에스엠지니텍코리아 주식회사 | 박막 형성 방법 |
| KR100481307B1 (ko) | 2001-11-08 | 2005-04-07 | 삼성전자주식회사 | 반도체 제조 설비의 카세트 테이블 |
| US7112690B2 (en) | 2001-11-09 | 2006-09-26 | National Research Council Of Canada | Volatile noble metal organometallic complexes |
| US6975921B2 (en) | 2001-11-09 | 2005-12-13 | Asm International Nv | Graphical representation of a wafer processing process |
| KR20030039247A (ko) | 2001-11-12 | 2003-05-17 | 주성엔지니어링(주) | 서셉터 |
| US20040010772A1 (en) | 2001-11-13 | 2004-01-15 | General Electric Company | Interactive method and system for faciliting the development of computer software applications |
| JP2005510082A (ja) | 2001-11-16 | 2005-04-14 | トリコン ホールディングス リミティド | 低ｋ誘電層の形成 |
| JP2003153706A (ja) | 2001-11-20 | 2003-05-27 | Toyobo Co Ltd | 面ファスナー雌材及びその製造方法 |
| US6926774B2 (en) | 2001-11-21 | 2005-08-09 | Applied Materials, Inc. | Piezoelectric vaporizer |
| KR100588774B1 (ko) | 2001-11-26 | 2006-06-14 | 주성엔지니어링(주) | 웨이퍼 서셉터 |
| USD461233S1 (en) | 2001-11-29 | 2002-08-06 | James Michael Whalen | Marine deck drain strainer |
| JP4116283B2 (ja) | 2001-11-30 | 2008-07-09 | レール・リキード−ソシエテ・アノニム・プール・レテュード・エ・レクスプロワタシオン・デ・プロセデ・ジョルジュ・クロード | ヘキサキス（モノヒドロカルビルアミノ）ジシランおよびその製造方法 |
| EP1463121B1 (en) | 2001-11-30 | 2011-04-20 | Panasonic Corporation | Semiconductor device and production method therefor |
| US7017514B1 (en) | 2001-12-03 | 2006-03-28 | Novellus Systems, Inc. | Method and apparatus for plasma optimization in water processing |
| US6638879B2 (en) | 2001-12-06 | 2003-10-28 | Macronix International Co., Ltd. | Method for forming nitride spacer by using atomic layer deposition |
| AU2002354103A1 (en) | 2001-12-07 | 2003-06-17 | Tokyo Electron Limited | Nitriding method for insulation film, semiconductor device and production method for semiconductor device, substrate treating device and substrate treating method |
| US6699784B2 (en) | 2001-12-14 | 2004-03-02 | Applied Materials Inc. | Method for depositing a low k dielectric film (K>3.5) for hard mask application |
| KR100446619B1 (ko) | 2001-12-14 | 2004-09-04 | 삼성전자주식회사 | 유도 결합 플라즈마 장치 |
| SE0104252D0 (sv) | 2001-12-17 | 2001-12-17 | Sintercast Ab | New device |
| US20030111013A1 (en) | 2001-12-19 | 2003-06-19 | Oosterlaken Theodorus Gerardus Maria | Method for the deposition of silicon germanium layers |
| US20030116087A1 (en) | 2001-12-21 | 2003-06-26 | Nguyen Anh N. | Chamber hardware design for titanium nitride atomic layer deposition |
| US6841201B2 (en) | 2001-12-21 | 2005-01-11 | The Procter & Gamble Company | Apparatus and method for treating a workpiece using plasma generated from microwave radiation |
| DE10163394A1 (de) | 2001-12-21 | 2003-07-03 | Aixtron Ag | Verfahren und Vorrichtung zum Abscheiden kristalliner Schichten und auf kristallinen Substraten |
| JP3891267B2 (ja) | 2001-12-25 | 2007-03-14 | キヤノンアネルバ株式会社 | シリコン酸化膜作製方法 |
| US20030124842A1 (en) | 2001-12-27 | 2003-07-03 | Applied Materials, Inc. | Dual-gas delivery system for chemical vapor deposition processes |
| KR100442104B1 (ko) | 2001-12-27 | 2004-07-27 | 삼성전자주식회사 | 커패시터를 갖는 반도체 소자의 제조방법 |
| US20030124818A1 (en) | 2001-12-28 | 2003-07-03 | Applied Materials, Inc. | Method and apparatus for forming silicon containing films |
| US6497734B1 (en) | 2002-01-02 | 2002-12-24 | Novellus Systems, Inc. | Apparatus and method for enhanced degassing of semiconductor wafers for increased throughput |
| US6766260B2 (en) | 2002-01-04 | 2004-07-20 | Mks Instruments, Inc. | Mass flow ratio system and method |
| US6942929B2 (en) | 2002-01-08 | 2005-09-13 | Nianci Han | Process chamber having component with yttrium-aluminum coating |
| US7371467B2 (en) | 2002-01-08 | 2008-05-13 | Applied Materials, Inc. | Process chamber component having electroplated yttrium containing coating |
| US7125812B2 (en) | 2002-01-15 | 2006-10-24 | Tokyo Electron Limited | CVD method and device for forming silicon-containing insulation film |
| US6827815B2 (en) | 2002-01-15 | 2004-12-07 | Applied Materials, Inc. | Showerhead assembly for a processing chamber |
| US6580050B1 (en) | 2002-01-16 | 2003-06-17 | Pace, Incorporated | Soldering station with built-in self-calibration function |
| US7077913B2 (en) | 2002-01-17 | 2006-07-18 | Hitachi Kokusai Electric, Inc. | Apparatus for fabricating a semiconductor device |
| WO2003062490A2 (en) | 2002-01-17 | 2003-07-31 | Sundew Technologies, Llc | Ald apparatus and method |
| JP4071968B2 (ja) | 2002-01-17 | 2008-04-02 | 東芝三菱電機産業システム株式会社 | ガス供給システム及びガス供給方法 |
| US6760981B2 (en) | 2002-01-18 | 2004-07-13 | Speedline Technologies, Inc. | Compact convection drying chamber for drying printed circuit boards and other electronic assemblies by enhanced evaporation |
| US6793733B2 (en) | 2002-01-25 | 2004-09-21 | Applied Materials Inc. | Gas distribution showerhead |
| US6998014B2 (en) | 2002-01-26 | 2006-02-14 | Applied Materials, Inc. | Apparatus and method for plasma assisted deposition |
| US6866746B2 (en) | 2002-01-26 | 2005-03-15 | Applied Materials, Inc. | Clamshell and small volume chamber with fixed substrate support |
| US20030141820A1 (en) | 2002-01-30 | 2003-07-31 | Applied Materials, Inc. | Method and apparatus for substrate processing |
| KR100450669B1 (ko) | 2002-01-30 | 2004-10-01 | 삼성전자주식회사 | 산소 침투 경로 및 캡슐화 장벽막을 구비하는 강유전체메모리 소자 및 그 제조 방법 |
| DE10203838B4 (de) | 2002-01-31 | 2006-12-28 | Infineon Technologies Ag | Fluorhaltiger Fotoresist mit Reaktionsankern für eine chemische Nachverstärkung und verbesserten Copolymerisationseigenschaften |
| US7115305B2 (en) | 2002-02-01 | 2006-10-03 | California Institute Of Technology | Method of producing regular arrays of nano-scale objects using nano-structured block-copolymeric materials |
| KR100377095B1 (en) | 2002-02-01 | 2003-03-20 | Nexo Co Ltd | Semiconductor fabrication apparatus using low energy plasma |
| US20080264443A1 (en) | 2002-02-05 | 2008-10-30 | Novellus Systems, Inc. | Apparatus and methods for increasing the rate of solute concentration evolution in a supercritical process chamber |
| US6732006B2 (en) | 2002-02-06 | 2004-05-04 | Asm International Nv | Method and system to process semiconductor wafers |
| US6899507B2 (en) | 2002-02-08 | 2005-05-31 | Asm Japan K.K. | Semiconductor processing apparatus comprising chamber partitioned into reaction and transfer sections |
| US6777352B2 (en) | 2002-02-11 | 2004-08-17 | Applied Materials, Inc. | Variable flow deposition apparatus and method in semiconductor substrate processing |
| US7479304B2 (en) | 2002-02-14 | 2009-01-20 | Applied Materials, Inc. | Gas distribution plate fabricated from a solid yttrium oxide-comprising substrate |
| US6734090B2 (en) | 2002-02-20 | 2004-05-11 | International Business Machines Corporation | Method of making an edge seal for a semiconductor device |
| DE10207131B4 (de) | 2002-02-20 | 2007-12-20 | Infineon Technologies Ag | Verfahren zur Bildung einer Hartmaske in einer Schicht auf einer flachen Scheibe |
| JP2003243481A (ja) | 2002-02-21 | 2003-08-29 | Asm Japan Kk | 半導体製造装置及びメンテナンス方法 |
| NL1020054C2 (nl) | 2002-02-25 | 2003-09-05 | Asm Int | Inrichting voor het behandelen van wafers, voorzien van een meetmiddelendoos. |
| US6787185B2 (en) | 2002-02-25 | 2004-09-07 | Micron Technology, Inc. | Deposition methods for improved delivery of metastable species |
| US6766545B2 (en) | 2002-02-27 | 2004-07-27 | B. Eugene Hodges | Shower drain |
| WO2003073055A1 (en) | 2002-02-28 | 2003-09-04 | Shin-Etsu Handotai Co., Ltd. | Temperature measuring system, heating device using it and production method for semiconductor wafer, heat ray insulating translucent member, visible light reflection membner, exposure system-use reflection mirror and exposure system, and semiconductor device produced by using them and vetical heat treating device |
| US20030159653A1 (en) | 2002-02-28 | 2003-08-28 | Dando Ross S. | Manifold assembly for feeding reactive precursors to substrate processing chambers |
| US20030170583A1 (en) | 2002-03-01 | 2003-09-11 | Hitachi Kokusai Electric Inc. | Heat treatment apparatus and a method for fabricating substrates |
| KR100997699B1 (ko) | 2002-03-05 | 2010-12-02 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 트랜지스터 |
| KR100449028B1 (ko) | 2002-03-05 | 2004-09-16 | 삼성전자주식회사 | 원자층 증착법을 이용한 박막 형성방법 |
| US20030168012A1 (en) | 2002-03-07 | 2003-09-11 | Hitoshi Tamura | Plasma processing device and plasma processing method |
| US6596973B1 (en) | 2002-03-07 | 2003-07-22 | Asm America, Inc. | Pyrometer calibrated wafer temperature estimator |
| US7250083B2 (en) | 2002-03-08 | 2007-07-31 | Sundew Technologies, Llc | ALD method and apparatus |
| US20030168174A1 (en) | 2002-03-08 | 2003-09-11 | Foree Michael Todd | Gas cushion susceptor system |
| US6753618B2 (en) | 2002-03-11 | 2004-06-22 | Micron Technology, Inc. | MIM capacitor with metal nitride electrode materials and method of formation |
| JP2003264186A (ja) | 2002-03-11 | 2003-09-19 | Asm Japan Kk | Ｃｖｄ装置処理室のクリーニング方法 |
| US6835039B2 (en) | 2002-03-15 | 2004-12-28 | Asm International N.V. | Method and apparatus for batch processing of wafers in a furnace |
| US6746240B2 (en) | 2002-03-15 | 2004-06-08 | Asm International N.V. | Process tube support sleeve with circumferential channels |
| US6776849B2 (en) | 2002-03-15 | 2004-08-17 | Asm America, Inc. | Wafer holder with peripheral lift ring |
| US6902395B2 (en) | 2002-03-15 | 2005-06-07 | Asm International, N.V. | Multilevel pedestal for furnace |
| US6962644B2 (en) | 2002-03-18 | 2005-11-08 | Applied Materials, Inc. | Tandem etch chamber plasma processing system |
| US20030173346A1 (en) | 2002-03-18 | 2003-09-18 | Renken Wayne Glenn | System and method for heating and cooling wafer at accelerated rates |
| JP4157914B2 (ja) | 2002-03-20 | 2008-10-01 | 坂野 數仁 | 温度測定装置及び温度測定方法 |
| US6780787B2 (en) | 2002-03-21 | 2004-08-24 | Lam Research Corporation | Low contamination components for semiconductor processing apparatus and methods for making components |
| US20030178145A1 (en) | 2002-03-25 | 2003-09-25 | Applied Materials, Inc. | Closed hole edge lift pin and susceptor for wafer process chambers |
| US6800134B2 (en) | 2002-03-26 | 2004-10-05 | Micron Technology, Inc. | Chemical vapor deposition methods and atomic layer deposition methods |
| JP4099092B2 (ja) | 2002-03-26 | 2008-06-11 | 東京エレクトロン株式会社 | 基板処理装置および基板処理方法、高速ロータリバルブ |
| US6825134B2 (en) | 2002-03-26 | 2004-11-30 | Applied Materials, Inc. | Deposition of film layers by alternately pulsing a precursor and high frequency power in a continuous gas flow |
| JP4128383B2 (ja) | 2002-03-27 | 2008-07-30 | 東京エレクトロン株式会社 | 処理装置及び処理方法 |
| US6883733B1 (en) | 2002-03-28 | 2005-04-26 | Novellus Systems, Inc. | Tapered post, showerhead design to improve mixing on dual plenum showerheads |
| DE10214066B4 (de) | 2002-03-28 | 2007-02-01 | Advanced Micro Devices, Inc., Sunnyvale | Halbleiterbauelement mit retrogradem Dotierprofil in einem Kanalgebiet und Verfahren zur Herstellung desselben |
| EP1490529A1 (en) | 2002-03-28 | 2004-12-29 | President And Fellows Of Harvard College | Vapor deposition of silicon dioxide nanolaminates |
| JP4106948B2 (ja) | 2002-03-29 | 2008-06-25 | 東京エレクトロン株式会社 | 被処理体の跳上り検出装置、被処理体の跳上り検出方法、プラズマ処理装置及びプラズマ処理方法 |
| JP4001498B2 (ja) | 2002-03-29 | 2007-10-31 | 東京エレクトロン株式会社 | 絶縁膜の形成方法及び絶縁膜の形成システム |
| US20030231698A1 (en) | 2002-03-29 | 2003-12-18 | Takatomo Yamaguchi | Apparatus and method for fabricating a semiconductor device and a heat treatment apparatus |
| US6594550B1 (en) | 2002-03-29 | 2003-07-15 | Asm America, Inc. | Method and system for using a buffer to track robotic movement |
| US6843858B2 (en) | 2002-04-02 | 2005-01-18 | Applied Materials, Inc. | Method of cleaning a semiconductor processing chamber |
| KR100829327B1 (ko) | 2002-04-05 | 2008-05-13 | 가부시키가이샤 히다치 고쿠사이 덴키 | 기판 처리 장치 및 반응 용기 |
| US20030188685A1 (en) | 2002-04-08 | 2003-10-09 | Applied Materials, Inc. | Laser drilled surfaces for substrate processing chambers |
| US6875271B2 (en) | 2002-04-09 | 2005-04-05 | Applied Materials, Inc. | Simultaneous cyclical deposition in different processing regions |
| KR20030081144A (ko) | 2002-04-11 | 2003-10-17 | 가부시키가이샤 히다치 고쿠사이 덴키 | 종형 반도체 제조 장치 |
| JP4092937B2 (ja) | 2002-04-11 | 2008-05-28 | 松下電工株式会社 | プラズマ処理装置及びプラズマ処理方法 |
| US7988833B2 (en) | 2002-04-12 | 2011-08-02 | Schneider Electric USA, Inc. | System and method for detecting non-cathode arcing in a plasma generation apparatus |
| US6710312B2 (en) | 2002-04-12 | 2004-03-23 | B H Thermal Corporation | Heating jacket assembly with field replaceable thermostat |
| US7279432B2 (en) | 2002-04-16 | 2007-10-09 | Applied Materials, Inc. | System and method for forming an integrated barrier layer |
| US8293001B2 (en) | 2002-04-17 | 2012-10-23 | Air Products And Chemicals, Inc. | Porogens, porogenated precursors and methods for using the same to provide porous organosilica glass films with low dielectric constants |
| US6846515B2 (en) | 2002-04-17 | 2005-01-25 | Air Products And Chemicals, Inc. | Methods for using porogens and/or porogenated precursors to provide porous organosilica glass films with low dielectric constants |
| AU2003224977A1 (en) | 2002-04-19 | 2003-11-03 | Mattson Technology, Inc. | System for depositing a film onto a substrate using a low vapor pressure gas precursor |
| KR100439948B1 (ko) | 2002-04-19 | 2004-07-12 | 주식회사 아이피에스 | 리모트 플라즈마 ａｌｄ 장치 및 이를 이용한 ａｌｄ 박막증착방법 |
| US6814813B2 (en) | 2002-04-24 | 2004-11-09 | Micron Technology, Inc. | Chemical vapor deposition apparatus |
| US6825126B2 (en) | 2002-04-25 | 2004-11-30 | Hitachi Kokusai Electric Inc. | Manufacturing method of semiconductor device and substrate processing apparatus |
| KR100472730B1 (ko) | 2002-04-26 | 2005-03-08 | 주식회사 하이닉스반도체 | 원자층증착법을 이용한 반도체 소자의 금속전극 형성방법 |
| US7160577B2 (en) | 2002-05-02 | 2007-01-09 | Micron Technology, Inc. | Methods for atomic-layer deposition of aluminum oxides in integrated circuits |
| US7589029B2 (en) | 2002-05-02 | 2009-09-15 | Micron Technology, Inc. | Atomic layer deposition and conversion |
| US7045430B2 (en) | 2002-05-02 | 2006-05-16 | Micron Technology Inc. | Atomic layer-deposited LaAlO3 films for gate dielectrics |
| US6684719B2 (en) | 2002-05-03 | 2004-02-03 | Caterpillar Inc | Method and apparatus for mixing gases |
| US7086347B2 (en) | 2002-05-06 | 2006-08-08 | Lam Research Corporation | Apparatus and methods for minimizing arcing in a plasma processing chamber |
| US20030209326A1 (en) | 2002-05-07 | 2003-11-13 | Mattson Technology, Inc. | Process and system for heating semiconductor substrates in a processing chamber containing a susceptor |
| JP2003324072A (ja) | 2002-05-07 | 2003-11-14 | Nec Electronics Corp | 半導体製造装置 |
| KR100437458B1 (ko) | 2002-05-07 | 2004-06-23 | 삼성전자주식회사 | 상변화 기억 셀들 및 그 제조방법들 |
| JP4338355B2 (ja) | 2002-05-10 | 2009-10-07 | 東京エレクトロン株式会社 | プラズマ処理装置 |
| US7122844B2 (en) | 2002-05-13 | 2006-10-17 | Cree, Inc. | Susceptor for MOCVD reactor |
| US20030213560A1 (en) | 2002-05-16 | 2003-11-20 | Yaxin Wang | Tandem wafer processing system and process |
| US6682973B1 (en) | 2002-05-16 | 2004-01-27 | Advanced Micro Devices, Inc. | Formation of well-controlled thin SiO, SiN, SiON layer for multilayer high-K dielectric applications |
| US7074298B2 (en) | 2002-05-17 | 2006-07-11 | Applied Materials | High density plasma CVD chamber |
| US6825051B2 (en) | 2002-05-17 | 2004-11-30 | Asm America, Inc. | Plasma etch resistant coating and process |
| KR100466818B1 (ko) | 2002-05-17 | 2005-01-24 | 주식회사 하이닉스반도체 | 반도체 소자의 절연막 형성 방법 |
| US6797525B2 (en) | 2002-05-22 | 2004-09-28 | Agere Systems Inc. | Fabrication process for a semiconductor device having a metal oxide dielectric material with a high dielectric constant, annealed with a buffered anneal process |
| US6902656B2 (en) | 2002-05-24 | 2005-06-07 | Dalsa Semiconductor Inc. | Fabrication of microstructures with vacuum-sealed cavity |
| KR20030092305A (ko) | 2002-05-29 | 2003-12-06 | 삼성전자주식회사 | 고온 언도우프 막 증착 설비의 챔버 외벽에 대한 온도측정장치 |
| US20060014384A1 (en) | 2002-06-05 | 2006-01-19 | Jong-Cheol Lee | Method of forming a layer and forming a capacitor of a semiconductor device having the same layer |
| US7195693B2 (en) | 2002-06-05 | 2007-03-27 | Advanced Thermal Sciences | Lateral temperature equalizing system for large area surfaces during processing |
| JP4311914B2 (ja) | 2002-06-05 | 2009-08-12 | 住友電気工業株式会社 | 半導体製造装置用ヒータモジュール |
| US7135421B2 (en) | 2002-06-05 | 2006-11-14 | Micron Technology, Inc. | Atomic layer-deposited hafnium aluminum oxide |
| JP2004014952A (ja) | 2002-06-10 | 2004-01-15 | Tokyo Electron Ltd | 処理装置および処理方法 |
| US6849464B2 (en) | 2002-06-10 | 2005-02-01 | Micron Technology, Inc. | Method of fabricating a multilayer dielectric tunnel barrier structure |
| US20050211167A1 (en) | 2002-06-10 | 2005-09-29 | Tokyo Electron Limited | Processing device and processing method |
| US6858547B2 (en) | 2002-06-14 | 2005-02-22 | Applied Materials, Inc. | System and method for forming a gate dielectric |
| US7067439B2 (en) | 2002-06-14 | 2006-06-27 | Applied Materials, Inc. | ALD metal oxide deposition process using direct oxidation |
| US7601225B2 (en) | 2002-06-17 | 2009-10-13 | Asm International N.V. | System for controlling the sublimation of reactants |
| JP2004022902A (ja) | 2002-06-18 | 2004-01-22 | Fujitsu Ltd | 半導体装置の製造方法 |
| AU2003241712A1 (en) | 2002-06-18 | 2003-12-31 | Tokuyama Corporation | Reaction apparatus for producing silicon |
| KR100455297B1 (ko) | 2002-06-19 | 2004-11-06 | 삼성전자주식회사 | 무기물 나노튜브 제조방법 |
| WO2004001804A2 (en) | 2002-06-19 | 2003-12-31 | Ziegler Byron J | Device for generation of reactive ions |
| JP3670628B2 (ja) | 2002-06-20 | 2005-07-13 | 株式会社東芝 | 成膜方法、成膜装置、および半導体装置の製造方法 |
| TWI278532B (en) | 2002-06-23 | 2007-04-11 | Asml Us Inc | Method for energy-assisted atomic layer deposition and removal |
| US6552209B1 (en) | 2002-06-24 | 2003-04-22 | Air Products And Chemicals, Inc. | Preparation of metal imino/amino complexes for metal oxide and metal nitride thin films |
| JP3999059B2 (ja) | 2002-06-26 | 2007-10-31 | 東京エレクトロン株式会社 | 基板処理システム及び基板処理方法 |
| US7255775B2 (en) | 2002-06-28 | 2007-08-14 | Toshiba Ceramics Co., Ltd. | Semiconductor wafer treatment member |
| JP4278441B2 (ja) | 2002-06-28 | 2009-06-17 | コバレントマテリアル株式会社 | 半導体ウエハ処理用部材 |
| US6827789B2 (en) | 2002-07-01 | 2004-12-07 | Semigear, Inc. | Isolation chamber arrangement for serial processing of semiconductor wafers for the electronic industry |
| US20040018750A1 (en) | 2002-07-02 | 2004-01-29 | Sophie Auguste J.L. | Method for deposition of nitrogen doped silicon carbide films |
| US6869641B2 (en) | 2002-07-03 | 2005-03-22 | Unaxis Balzers Ltd. | Method and apparatus for ALD on a rotary susceptor |
| US7356762B2 (en) | 2002-07-08 | 2008-04-08 | Asm International Nv | Method for the automatic generation of an interactive electronic equipment documentation package |
| US6821347B2 (en) | 2002-07-08 | 2004-11-23 | Micron Technology, Inc. | Apparatus and method for depositing materials onto microelectronic workpieces |
| KR100505668B1 (ko) | 2002-07-08 | 2005-08-03 | 삼성전자주식회사 | 원자층 증착 방법에 의한 실리콘 산화막 형성 방법 |
| US6838125B2 (en) | 2002-07-10 | 2005-01-04 | Applied Materials, Inc. | Method of film deposition using activated precursor gases |
| WO2004007796A1 (en) | 2002-07-12 | 2004-01-22 | President And Fellows Of Harvard College | Vapor deposition of tungsten nitride |
| TWI277140B (en) | 2002-07-12 | 2007-03-21 | Asm Int | Method and apparatus for the pulse-wise supply of a vaporized liquid reactant |
| US20050136657A1 (en) | 2002-07-12 | 2005-06-23 | Tokyo Electron Limited | Film-formation method for semiconductor process |
| WO2004007800A1 (en) | 2002-07-15 | 2004-01-22 | Aviza Technology, Inc. | Thermal processing apparatus and method for evacuating a process chamber |
| US20070243317A1 (en) | 2002-07-15 | 2007-10-18 | Du Bois Dale R | Thermal Processing System and Configurable Vertical Chamber |
| US6976822B2 (en) | 2002-07-16 | 2005-12-20 | Semitool, Inc. | End-effectors and transfer devices for handling microelectronic workpieces |
| US6955211B2 (en) | 2002-07-17 | 2005-10-18 | Applied Materials, Inc. | Method and apparatus for gas temperature control in a semiconductor processing system |
| US7186385B2 (en) | 2002-07-17 | 2007-03-06 | Applied Materials, Inc. | Apparatus for providing gas to a processing chamber |
| US7357138B2 (en) | 2002-07-18 | 2008-04-15 | Air Products And Chemicals, Inc. | Method for etching high dielectric constant materials and for cleaning deposition chambers for high dielectric constant materials |
| JP4186536B2 (ja) | 2002-07-18 | 2008-11-26 | 松下電器産業株式会社 | プラズマ処理装置 |
| CN100374768C (zh) | 2002-07-19 | 2008-03-12 | 诚实公司 | 液体流动控制设备及方法 |
| JP2005534179A (ja) | 2002-07-19 | 2005-11-10 | アヴィザ テクノロジー インコーポレイテッド | アミノシランとオゾンを用いる低温誘電体蒸着法 |
| KR100447284B1 (ko) | 2002-07-19 | 2004-09-07 | 삼성전자주식회사 | 화학기상증착 챔버의 세정 방법 |
| TW200427858A (en) | 2002-07-19 | 2004-12-16 | Asml Us Inc | Atomic layer deposition of high k dielectric films |
| JP5005170B2 (ja) | 2002-07-19 | 2012-08-22 | エーエスエム アメリカ インコーポレイテッド | 超高品質シリコン含有化合物層の形成方法 |
| JP4133062B2 (ja) | 2002-07-19 | 2008-08-13 | 大日本スクリーン製造株式会社 | 熱処理装置 |
| US6772072B2 (en) | 2002-07-22 | 2004-08-03 | Applied Materials, Inc. | Method and apparatus for monitoring solid precursor delivery |
| US6921062B2 (en) | 2002-07-23 | 2005-07-26 | Advanced Technology Materials, Inc. | Vaporizer delivery ampoule |
| US7223323B2 (en) | 2002-07-24 | 2007-05-29 | Applied Materials, Inc. | Multi-chemistry plating system |
| KR100464855B1 (ko) | 2002-07-26 | 2005-01-06 | 삼성전자주식회사 | 박막 형성 방법과, 이를 이용한 커패시터 형성 방법 및트랜지스터 형성 방법 |
| US7018555B2 (en) | 2002-07-26 | 2006-03-28 | Dainippon Screen Mfg. Co., Ltd. | Substrate treatment method and substrate treatment apparatus |
| JP3908112B2 (ja) | 2002-07-29 | 2007-04-25 | Ｓｕｍｃｏ Ｔｅｃｈｘｉｖ株式会社 | サセプタ、エピタキシャルウェーハ製造装置及びエピタキシャルウェーハ製造方法 |
| DE10234694A1 (de) | 2002-07-30 | 2004-02-12 | Infineon Technologies Ag | Verfahren zum Oxidieren einer Schicht und zugehörige Aufnamevorrichtung für ein Substrat |
| US6844119B2 (en) | 2002-07-30 | 2005-01-18 | Hoya Corporation | Method for producing a halftone phase shift mask blank, a halftone phase shift mask blank and halftone phase shift mask |
| US7122085B2 (en) | 2002-07-30 | 2006-10-17 | Asm America, Inc. | Sublimation bed employing carrier gas guidance structures |
| US7504006B2 (en) | 2002-08-01 | 2009-03-17 | Applied Materials, Inc. | Self-ionized and capacitively-coupled plasma for sputtering and resputtering |
| DE10235427A1 (de) | 2002-08-02 | 2004-02-12 | Eos Gmbh Electro Optical Systems | Vorrichtung und Verfahren zum Herstellen von dreidimensionalen Objekten mittels eines generativen Fertigungsverfahrens |
| US7153542B2 (en) | 2002-08-06 | 2006-12-26 | Tegal Corporation | Assembly line processing method |
| JP4034145B2 (ja) | 2002-08-09 | 2008-01-16 | 住友大阪セメント株式会社 | サセプタ装置 |
| US6818864B2 (en) | 2002-08-09 | 2004-11-16 | Asm America, Inc. | LED heat lamp arrays for CVD heating |
| KR100480610B1 (ko) | 2002-08-09 | 2005-03-31 | 삼성전자주식회사 | 실리콘 산화막을 이용한 미세 패턴 형성방법 |
| US7085623B2 (en) | 2002-08-15 | 2006-08-01 | Asm International Nv | Method and system for using short ranged wireless enabled computers as a service tool |
| US6887521B2 (en) | 2002-08-15 | 2005-05-03 | Micron Technology, Inc. | Gas delivery system for pulsed-type deposition processes used in the manufacturing of micro-devices |
| US6890596B2 (en) | 2002-08-15 | 2005-05-10 | Micron Technology, Inc. | Deposition methods |
| US7192486B2 (en) | 2002-08-15 | 2007-03-20 | Applied Materials, Inc. | Clog-resistant gas delivery system |
| TW200408015A (en) | 2002-08-18 | 2004-05-16 | Asml Us Inc | Atomic layer deposition of high K metal silicates |
| TW200408323A (en) | 2002-08-18 | 2004-05-16 | Asml Us Inc | Atomic layer deposition of high k metal oxides |
| US6649921B1 (en) | 2002-08-19 | 2003-11-18 | Fusion Uv Systems, Inc. | Apparatus and method providing substantially two-dimensionally uniform irradiation |
| US6927140B2 (en) | 2002-08-21 | 2005-08-09 | Intel Corporation | Method for fabricating a bipolar transistor base |
| US20040036129A1 (en) | 2002-08-22 | 2004-02-26 | Micron Technology, Inc. | Atomic layer deposition of CMOS gates with variable work functions |
| US6884296B2 (en) | 2002-08-23 | 2005-04-26 | Micron Technology, Inc. | Reactors having gas distributors and methods for depositing materials onto micro-device workpieces |
| US6967154B2 (en) | 2002-08-26 | 2005-11-22 | Micron Technology, Inc. | Enhanced atomic layer deposition |
| US7041609B2 (en) | 2002-08-28 | 2006-05-09 | Micron Technology, Inc. | Systems and methods for forming metal oxides using alcohols |
| US6794284B2 (en) | 2002-08-28 | 2004-09-21 | Micron Technology, Inc. | Systems and methods for forming refractory metal nitride layers using disilazanes |
| US6902647B2 (en) | 2002-08-29 | 2005-06-07 | Asm International N.V. | Method of processing substrates with integrated weighing steps |
| JP2004091848A (ja) | 2002-08-30 | 2004-03-25 | Tokyo Electron Ltd | 薄膜形成装置の原料ガス供給系および薄膜形成装置 |
| US7256375B2 (en) | 2002-08-30 | 2007-08-14 | Asm International N.V. | Susceptor plate for high temperature heat treatment |
| USD511280S1 (en) | 2002-09-04 | 2005-11-08 | Thermal Dynamics Corporation | Plasma arc torch tip |
| WO2004025697A2 (en) | 2002-09-10 | 2004-03-25 | Fsi International, Inc. | Thermal process station with heated lid |
| US6936086B2 (en) | 2002-09-11 | 2005-08-30 | Planar Systems, Inc. | High conductivity particle filter |
| US20040050325A1 (en) | 2002-09-12 | 2004-03-18 | Samoilov Arkadii V. | Apparatus and method for delivering process gas to a substrate processing system |
| JP2004103990A (ja) | 2002-09-12 | 2004-04-02 | Hitachi Kokusai Electric Inc | 半導体製造装置および半導体装置の製造方法 |
| US7122415B2 (en) | 2002-09-12 | 2006-10-17 | Promos Technologies, Inc. | Atomic layer deposition of interpoly oxides in a non-volatile memory device |
| US7011299B2 (en) | 2002-09-16 | 2006-03-14 | Matheson Tri-Gas, Inc. | Liquid vapor delivery system and method of maintaining a constant level of fluid therein |
| KR100497748B1 (ko) | 2002-09-17 | 2005-06-29 | 주식회사 무한 | 반도체소자 제조용 원자층 증착 장치 및 원자층 증착 방법 |
| US7411352B2 (en) | 2002-09-19 | 2008-08-12 | Applied Process Technologies, Inc. | Dual plasma beam sources and method |
| JP3594947B2 (ja) | 2002-09-19 | 2004-12-02 | 東京エレクトロン株式会社 | 絶縁膜の形成方法、半導体装置の製造方法、基板処理装置 |
| US6905940B2 (en) | 2002-09-19 | 2005-06-14 | Applied Materials, Inc. | Method using TEOS ramp-up during TEOS/ozone CVD for improved gap-fill |
| US6715949B1 (en) | 2002-09-20 | 2004-04-06 | Eastman Kodak Company | Medium-handling in printer for donor and receiver mediums |
| US7252738B2 (en) | 2002-09-20 | 2007-08-07 | Lam Research Corporation | Apparatus for reducing polymer deposition on a substrate and substrate support |
| US6767824B2 (en) | 2002-09-23 | 2004-07-27 | Padmapani C. Nallan | Method of fabricating a gate structure of a field effect transistor using an alpha-carbon mask |
| JP4231953B2 (ja) | 2002-09-24 | 2009-03-04 | ペガサスネット株式会社 | 耳孔式ｓａｗ体温計及び該体温計による体温管理システム |
| JP3887291B2 (ja) | 2002-09-24 | 2007-02-28 | 東京エレクトロン株式会社 | 基板処理装置 |
| JP3877157B2 (ja) | 2002-09-24 | 2007-02-07 | 東京エレクトロン株式会社 | 基板処理装置 |
| US6696367B1 (en) | 2002-09-27 | 2004-02-24 | Asm America, Inc. | System for the improved handling of wafers within a process tool |
| JP2004128019A (ja) | 2002-09-30 | 2004-04-22 | Applied Materials Inc | プラズマ処理方法及び装置 |
| JP2004127957A (ja) | 2002-09-30 | 2004-04-22 | Fujitsu Ltd | 半導体装置の製造方法と半導体装置 |
| US20040065255A1 (en) | 2002-10-02 | 2004-04-08 | Applied Materials, Inc. | Cyclical layer deposition system |
| US8187377B2 (en) | 2002-10-04 | 2012-05-29 | Silicon Genesis Corporation | Non-contact etch annealing of strained layers |
| US20070051471A1 (en) | 2002-10-04 | 2007-03-08 | Applied Materials, Inc. | Methods and apparatus for stripping |
| US7749563B2 (en) | 2002-10-07 | 2010-07-06 | Applied Materials, Inc. | Two-layer film for next generation damascene barrier application with good oxidation resistance |
| US7445690B2 (en) | 2002-10-07 | 2008-11-04 | Tokyo Electron Limited | Plasma processing apparatus |
| JP3671951B2 (ja) | 2002-10-08 | 2005-07-13 | 住友電気工業株式会社 | 測温装置及びそれを用いたセラミックスヒータ |
| JP4093462B2 (ja) | 2002-10-09 | 2008-06-04 | 東京エレクトロン株式会社 | 基板処理方法及び基板処理装置 |
| JP2004134553A (ja) | 2002-10-10 | 2004-04-30 | Sony Corp | レジストパターンの形成方法及び半導体装置の製造方法 |
| EP1408140A1 (en) | 2002-10-11 | 2004-04-14 | STMicroelectronics S.r.l. | A high-density plasma process for depositing a layer of Silicon Nitride |
| US6905737B2 (en) | 2002-10-11 | 2005-06-14 | Applied Materials, Inc. | Method of delivering activated species for rapid cyclical deposition |
| US7080545B2 (en) | 2002-10-17 | 2006-07-25 | Advanced Technology Materials, Inc. | Apparatus and process for sensing fluoro species in semiconductor processing systems |
| US6818566B2 (en) | 2002-10-18 | 2004-11-16 | The Boc Group, Inc. | Thermal activation of fluorine for use in a semiconductor chamber |
| KR100460841B1 (ko) | 2002-10-22 | 2004-12-09 | 한국전자통신연구원 | 플라즈마 인가 원자층 증착법을 통한 질소첨가 산화물박막의 형성방법 |
| US7144806B1 (en) | 2002-10-23 | 2006-12-05 | Novellus Systems, Inc. | ALD of tantalum using a hydride reducing agent |
| US6821909B2 (en) | 2002-10-30 | 2004-11-23 | Applied Materials, Inc. | Post rinse to improve selective deposition of electroless cobalt on copper for ULSI application |
| JP2004153037A (ja) | 2002-10-31 | 2004-05-27 | Renesas Technology Corp | 半導体装置の製造方法 |
| US6982230B2 (en) | 2002-11-08 | 2006-01-03 | International Business Machines Corporation | Deposition of hafnium oxide and/or zirconium oxide and fabrication of passivated electronic structures |
| EP1420080A3 (en) | 2002-11-14 | 2005-11-09 | Applied Materials, Inc. | Apparatus and method for hybrid chemical deposition processes |
| JP4009523B2 (ja) | 2002-11-14 | 2007-11-14 | 岩谷産業株式会社 | オゾンガス濃度計測方法及びオゾンガス濃度計測装置 |
| CN102312214B (zh) | 2002-11-15 | 2013-10-23 | 哈佛学院院长等 | 使用脒基金属的原子层沉积 |
| JP4502590B2 (ja) | 2002-11-15 | 2010-07-14 | 株式会社ルネサステクノロジ | 半導体製造装置 |
| US6676290B1 (en) | 2002-11-15 | 2004-01-13 | Hsueh-Yu Lu | Electronic clinical thermometer |
| JP3946130B2 (ja) | 2002-11-20 | 2007-07-18 | 東京エレクトロン株式会社 | プラズマ処理装置およびプラズマ処理方法 |
| KR100520902B1 (ko) | 2002-11-20 | 2005-10-12 | 주식회사 아이피에스 | 알루미늄 화합물을 이용한 박막증착방법 |
| US7062161B2 (en) | 2002-11-28 | 2006-06-13 | Dainippon Screen Mfg. Co., Ltd. | Photoirradiation thermal processing apparatus and thermal processing susceptor employed therefor |
| KR100935291B1 (ko) | 2002-11-28 | 2010-01-06 | 도쿄엘렉트론가부시키가이샤 | 기판 처리 시스템 및 도포 현상 장치 |
| KR100496265B1 (ko) | 2002-11-29 | 2005-06-17 | 한국전자통신연구원 | 반도체 소자의 박막 형성방법 |
| KR100486690B1 (ko) | 2002-11-29 | 2005-05-03 | 삼성전자주식회사 | 기판 이송 모듈의 오염을 제어할 수 있는 기판 처리 장치및 방법 |
| TW200410337A (en) | 2002-12-02 | 2004-06-16 | Au Optronics Corp | Dry cleaning method for plasma reaction chamber |
| US6858524B2 (en) | 2002-12-03 | 2005-02-22 | Asm International, Nv | Method of depositing barrier layer for metal gates |
| US7122414B2 (en) | 2002-12-03 | 2006-10-17 | Asm International, Inc. | Method to fabricate dual metal CMOS devices |
| US6895158B2 (en) | 2002-12-09 | 2005-05-17 | Eastman Kodak Company | Waveguide and method of smoothing optical surfaces |
| US6720531B1 (en) | 2002-12-11 | 2004-04-13 | Asm America, Inc. | Light scattering process chamber walls |
| USD496008S1 (en) | 2002-12-12 | 2004-09-14 | Tokyo Electron Limited | Exhaust ring for manufacturing semiconductors |
| USD494552S1 (en) | 2002-12-12 | 2004-08-17 | Tokyo Electron Limited | Exhaust ring for manufacturing semiconductors |
| US6929699B2 (en) | 2002-12-13 | 2005-08-16 | Texas Instruments Incorporated | Gas injectors for a vertical furnace used in semiconductor processing |
| JP2004244298A (ja) | 2002-12-17 | 2004-09-02 | Kobe Steel Ltd | ダイヤモンド気相合成用基板ホルダ及びダイヤモンド気相合成方法 |
| US7296532B2 (en) | 2002-12-18 | 2007-11-20 | Taiwan Semiconductor Manufacturing Co., Ltd. | Bypass gas feed system and method to improve reactant gas flow and film deposition |
| US7092287B2 (en) | 2002-12-18 | 2006-08-15 | Asm International N.V. | Method of fabricating silicon nitride nanodots |
| AU2003301074A1 (en) | 2002-12-20 | 2004-07-22 | Brooks Automation, Inc. | System and method for on-the-fly eccentricity recognition |
| DE10259945A1 (de) | 2002-12-20 | 2004-07-01 | Tews, Walter, Dipl.-Chem. Dr.rer.nat.habil. | Leuchtstoffe mit verlängerter Fluoreszenzlebensdauer |
| CN2588350Y (zh) | 2002-12-26 | 2003-11-26 | 张连合 | 一种热电偶 |
| JP2004207564A (ja) | 2002-12-26 | 2004-07-22 | Fujitsu Ltd | 半導体装置の製造方法と半導体装置 |
| DE10261362B8 (de) | 2002-12-30 | 2008-08-28 | Osram Opto Semiconductors Gmbh | Substrat-Halter |
| US6855645B2 (en) | 2002-12-30 | 2005-02-15 | Novellus Systems, Inc. | Silicon carbide having low dielectric constant |
| US6692249B1 (en) | 2003-01-06 | 2004-02-17 | Texas Instruments Incorporated | Hot liner insertion/removal fixture |
| US7270713B2 (en) | 2003-01-07 | 2007-09-18 | Applied Materials, Inc. | Tunable gas distribution plate assembly |
| US7262133B2 (en) | 2003-01-07 | 2007-08-28 | Applied Materials, Inc. | Enhancement of copper line reliability using thin ALD tan film to cap the copper line |
| US6790788B2 (en) | 2003-01-13 | 2004-09-14 | Applied Materials Inc. | Method of improving stability in low k barrier layers |
| USD486891S1 (en) | 2003-01-21 | 2004-02-17 | Richard W. Cronce, Jr. | Vent pipe protective cover |
| USD497977S1 (en) | 2003-01-22 | 2004-11-02 | Tour & Andersson Ab | Sealing ring membrane |
| US7122222B2 (en) | 2003-01-23 | 2006-10-17 | Air Products And Chemicals, Inc. | Precursors for depositing silicon containing films and processes thereof |
| US20040144980A1 (en) | 2003-01-27 | 2004-07-29 | Ahn Kie Y. | Atomic layer deposition of metal oxynitride layers as gate dielectrics and semiconductor device structures utilizing metal oxynitride layers |
| USD497536S1 (en) | 2003-01-28 | 2004-10-26 | Bridgestone Corporation | Rubber vibration insulator |
| USD558021S1 (en) | 2003-01-30 | 2007-12-25 | Roger Lawrence | Metal fabrication clamp |
| US20040152287A1 (en) | 2003-01-31 | 2004-08-05 | Sherrill Adrian B. | Deposition of a silicon film |
| JP2004235516A (ja) | 2003-01-31 | 2004-08-19 | Trecenti Technologies Inc | ウエハ収納治具のパージ方法、ロードポートおよび半導体装置の製造方法 |
| JP4472372B2 (ja) | 2003-02-03 | 2010-06-02 | 株式会社オクテック | プラズマ処理装置及びプラズマ処理装置用の電極板 |
| US7163721B2 (en) | 2003-02-04 | 2007-01-16 | Tegal Corporation | Method to plasma deposit on organic polymer dielectric film |
| US7129165B2 (en) | 2003-02-04 | 2006-10-31 | Asm Nutool, Inc. | Method and structure to improve reliability of copper interconnects |
| US7713592B2 (en) | 2003-02-04 | 2010-05-11 | Tegal Corporation | Nanolayer deposition process |
| JP2004241203A (ja) | 2003-02-04 | 2004-08-26 | Hitachi High-Technologies Corp | プラズマ処理室壁処理方法 |
| KR100505670B1 (ko) | 2003-02-05 | 2005-08-03 | 삼성전자주식회사 | 부산물 제거용 고온 유체 공급 장치를 구비한 반도체 소자제조 장치 |
| US6854580B2 (en) | 2003-02-06 | 2005-02-15 | Borgwarner, Inc. | Torsional damper having variable bypass clutch with centrifugal release mechanism |
| KR100800639B1 (ko) | 2003-02-06 | 2008-02-01 | 동경 엘렉트론 주식회사 | 플라즈마 처리 방법, 반도체 기판 및 플라즈마 처리 장치 |
| US6876017B2 (en) | 2003-02-08 | 2005-04-05 | Intel Corporation | Polymer sacrificial light absorbing structure and method |
| KR100505061B1 (ko) | 2003-02-12 | 2005-08-01 | 삼성전자주식회사 | 기판 이송 모듈 |
| JP4168775B2 (ja) | 2003-02-12 | 2008-10-22 | 株式会社デンソー | 薄膜の製造方法 |
| US7374696B2 (en) | 2003-02-14 | 2008-05-20 | Applied Materials, Inc. | Method and apparatus for removing a halogen-containing residue |
| TWI338323B (en) | 2003-02-17 | 2011-03-01 | Nikon Corp | Stage device, exposure device and manufacguring method of devices |
| JP4214795B2 (ja) | 2003-02-20 | 2009-01-28 | 東京エレクトロン株式会社 | 成膜方法 |
| US20040163590A1 (en) | 2003-02-24 | 2004-08-26 | Applied Materials, Inc. | In-situ health check of liquid injection vaporizer |
| US6917755B2 (en) | 2003-02-27 | 2005-07-12 | Applied Materials, Inc. | Substrate support |
| US6930059B2 (en) | 2003-02-27 | 2005-08-16 | Sharp Laboratories Of America, Inc. | Method for depositing a nanolaminate film by atomic layer deposition |
| US7091453B2 (en) | 2003-02-27 | 2006-08-15 | Dainippon Screen Mfg. Co., Ltd. | Heat treatment apparatus by means of light irradiation |
| US20040168627A1 (en) | 2003-02-27 | 2004-09-02 | Sharp Laboratories Of America, Inc. | Atomic layer deposition of oxide film |
| US7077911B2 (en) | 2003-03-03 | 2006-07-18 | Seiko Epson Corporation | MOCVD apparatus and MOCVD method |
| US7098149B2 (en) | 2003-03-04 | 2006-08-29 | Air Products And Chemicals, Inc. | Mechanical enhancement of dense and porous organosilicate materials by UV exposure |
| US7192892B2 (en) | 2003-03-04 | 2007-03-20 | Micron Technology, Inc. | Atomic layer deposited dielectric layers |
| JP2004273766A (ja) | 2003-03-07 | 2004-09-30 | Watanabe Shoko:Kk | 気化装置及びそれを用いた成膜装置並びに気化方法及び成膜方法 |
| US7238653B2 (en) | 2003-03-10 | 2007-07-03 | Hynix Semiconductor Inc. | Cleaning solution for photoresist and method for forming pattern using the same |
| US6867086B1 (en) | 2003-03-13 | 2005-03-15 | Novellus Systems, Inc. | Multi-step deposition and etch back gap fill process |
| KR101416781B1 (ko) | 2003-03-14 | 2014-07-08 | 아익스트론 인코포레이티드 | 원자 층 증착을 위한 방법 및 장치 |
| US7140558B2 (en) | 2003-03-24 | 2006-11-28 | Irene Base, legal representative | Mixing arrangement for atomizing nozzle in multi-phase flow |
| JP2004288916A (ja) | 2003-03-24 | 2004-10-14 | Renesas Technology Corp | Ｃｖｄ装置 |
| JP4369203B2 (ja) | 2003-03-24 | 2009-11-18 | 信越化学工業株式会社 | 反射防止膜材料、反射防止膜を有する基板及びパターン形成方法 |
| JP2004294638A (ja) | 2003-03-26 | 2004-10-21 | Tokyo Ohka Kogyo Co Ltd | ネガ型レジスト材料およびレジストパターン形成方法 |
| US7393207B2 (en) | 2003-03-26 | 2008-07-01 | Shin-Etsu Handotai Co., Ltd. | Wafer support tool for heat treatment and heat treatment apparatus |
| US7223014B2 (en) | 2003-03-28 | 2007-05-29 | Intempco Controls Ltd. | Remotely programmable integrated sensor transmitter |
| US6972055B2 (en) | 2003-03-28 | 2005-12-06 | Finens Corporation | Continuous flow deposition system |
| US7208389B1 (en) | 2003-03-31 | 2007-04-24 | Novellus Systems, Inc. | Method of porogen removal from porous low-k films using UV radiation |
| US20040198069A1 (en) | 2003-04-04 | 2004-10-07 | Applied Materials, Inc. | Method for hafnium nitride deposition |
| WO2004090960A1 (ja) | 2003-04-07 | 2004-10-21 | Tokyo Electron Limited | 載置台構造及びこの載置台構造を有する熱処理装置 |
| SE525113C2 (sv) | 2003-04-08 | 2004-11-30 | Tetra Laval Holdings & Finance | Metod och anordning för kontinuerlig blandning av två flöden |
| KR100500246B1 (ko) | 2003-04-09 | 2005-07-11 | 삼성전자주식회사 | 가스공급장치 |
| US7037376B2 (en) | 2003-04-11 | 2006-05-02 | Applied Materials Inc. | Backflush chamber clean |
| US6843830B2 (en) | 2003-04-15 | 2005-01-18 | Advanced Technology Materials, Inc. | Abatement system targeting a by-pass effluent stream of a semiconductor process tool |
| US6942753B2 (en) | 2003-04-16 | 2005-09-13 | Applied Materials, Inc. | Gas distribution plate assembly for large area plasma enhanced chemical vapor deposition |
| JP2004336019A (ja) | 2003-04-18 | 2004-11-25 | Advanced Lcd Technologies Development Center Co Ltd | 成膜方法、半導体素子の形成方法、半導体素子、表示装置の形成方法及び表示装置 |
| JP4347295B2 (ja) | 2003-04-18 | 2009-10-21 | 株式会社日立国際電気 | 半導体製造装置および半導体装置の製造方法 |
| US7077973B2 (en) | 2003-04-18 | 2006-07-18 | Applied Materials, Inc. | Methods for substrate orientation |
| TW200506093A (en) | 2003-04-21 | 2005-02-16 | Aviza Tech Inc | System and method for forming multi-component films |
| US7221553B2 (en) | 2003-04-22 | 2007-05-22 | Applied Materials, Inc. | Substrate support having heat transfer system |
| US7183186B2 (en) | 2003-04-22 | 2007-02-27 | Micro Technology, Inc. | Atomic layer deposited ZrTiO4 films |
| US6953608B2 (en) | 2003-04-23 | 2005-10-11 | Taiwan Semiconductor Manufacturing Co., Ltd. | Solution for FSG induced metal corrosion & metal peeling defects with extra bias liner and smooth RF bias ramp up |
| US7335396B2 (en) | 2003-04-24 | 2008-02-26 | Micron Technology, Inc. | Methods for controlling mass flow rates and pressures in passageways coupled to reaction chambers and systems for depositing material onto microfeature workpieces in reaction chambers |
| US20040211357A1 (en) | 2003-04-24 | 2004-10-28 | Gadgil Pradad N. | Method of manufacturing a gap-filled structure of a semiconductor device |
| US20040261946A1 (en) | 2003-04-24 | 2004-12-30 | Tokyo Electron Limited | Plasma processing apparatus, focus ring, and susceptor |
| US20040261712A1 (en) | 2003-04-25 | 2004-12-30 | Daisuke Hayashi | Plasma processing apparatus |
| KR200319645Y1 (ko) | 2003-04-28 | 2003-07-12 | 이규옥 | 웨이퍼 캐리어 고정 장치 |
| US7375035B2 (en) | 2003-04-29 | 2008-05-20 | Ronal Systems Corporation | Host and ancillary tool interface methodology for distributed processing |
| US7601223B2 (en) | 2003-04-29 | 2009-10-13 | Asm International N.V. | Showerhead assembly and ALD methods |
| US7115528B2 (en) | 2003-04-29 | 2006-10-03 | Micron Technology, Inc. | Systems and method for forming silicon oxide layers |
| US7033113B2 (en) | 2003-05-01 | 2006-04-25 | Shell Oil Company | Mid-line connector and method for pipe-in-pipe electrical heating |
| US20090204403A1 (en) | 2003-05-07 | 2009-08-13 | Omega Engineering, Inc. | Speech generating means for use with signal sensors |
| JP2004335715A (ja) | 2003-05-07 | 2004-11-25 | Toppoly Optoelectronics Corp | シリコン酸化層の形成方法 |
| US6905944B2 (en) | 2003-05-08 | 2005-06-14 | International Business Machines Corporation | Sacrificial collar method for improved deep trench processing |
| US6939817B2 (en) | 2003-05-08 | 2005-09-06 | Micron Technology, Inc. | Removal of carbon from an insulative layer using ozone |
| JP3642572B2 (ja) | 2003-05-09 | 2005-04-27 | 東芝三菱電機産業システム株式会社 | オゾン発生装置およびオゾン発生方法 |
| US7265061B1 (en) | 2003-05-09 | 2007-09-04 | Novellus Systems, Inc. | Method and apparatus for UV exposure of low dielectric constant materials for porogen removal and improved mechanical properties |
| JP4152802B2 (ja) | 2003-05-09 | 2008-09-17 | 日本エー・エス・エム株式会社 | 薄膜形成装置 |
| EP1623454A2 (en) | 2003-05-09 | 2006-02-08 | ASM America, Inc. | Reactor surface passivation through chemical deactivation |
| US20040250600A1 (en) | 2003-05-12 | 2004-12-16 | Bevers William Daniel | Method of mass flow control flow verification and calibration |
| US20050000428A1 (en) | 2003-05-16 | 2005-01-06 | Shero Eric J. | Method and apparatus for vaporizing and delivering reactant |
| US7846254B2 (en) | 2003-05-16 | 2010-12-07 | Applied Materials, Inc. | Heat transfer assembly |
| USD505590S1 (en) | 2003-05-22 | 2005-05-31 | Kraft Foods Holdings, Inc. | Susceptor tray |
| JP4403824B2 (ja) | 2003-05-26 | 2010-01-27 | 東京エレクトロン株式会社 | シリコン窒化膜の成膜方法 |
| CN1795290B (zh) | 2003-05-27 | 2010-06-16 | 应用材料股份有限公司 | 一种用来产生一可用于半导体处理系统的前体的方法和设备 |
| US7205240B2 (en) | 2003-06-04 | 2007-04-17 | Applied Materials, Inc. | HDP-CVD multistep gapfill process |
| US7141500B2 (en) | 2003-06-05 | 2006-11-28 | American Air Liquide, Inc. | Methods for forming aluminum containing films utilizing amino aluminum precursors |
| US8512798B2 (en) | 2003-06-05 | 2013-08-20 | Superpower, Inc. | Plasma assisted metalorganic chemical vapor deposition (MOCVD) system |
| JP2005005406A (ja) | 2003-06-10 | 2005-01-06 | Semiconductor Leading Edge Technologies Inc | 半導体装置の製造方法 |
| US7598513B2 (en) | 2003-06-13 | 2009-10-06 | Arizona Board Of Regents, Acting For And On Behalf Of Arizona State University, A Corporate Body Organized Under Arizona Law | SixSnyGe1-x-y and related alloy heterostructures based on Si, Ge and Sn |
| US7589003B2 (en) | 2003-06-13 | 2009-09-15 | Arizona Board Of Regents, Acting For And On Behalf Of Arizona State University, A Corporate Body Organized Under Arizona Law | GeSn alloys and ordered phases with direct tunable bandgaps grown directly on silicon |
| WO2005015609A2 (en) | 2003-06-13 | 2005-02-17 | Arizona Board Of Regents, Acting For And On Behalf Of Arizona State University | Sixsnyge1-x-y and related alloy heterostructures based on si, ge and sn |
| DE10326755A1 (de) | 2003-06-13 | 2006-01-26 | Patent-Treuhand-Gesellschaft für elektrische Glühlampen mbH | Entladungslampe mit Zweibanden-Leuchtstoff |
| WO2004112114A1 (ja) | 2003-06-16 | 2004-12-23 | Tokyo Electron Limited | 成膜方法、半導体装置の製造方法、半導体装置および成膜装置 |
| US7211508B2 (en) | 2003-06-18 | 2007-05-01 | Applied Materials, Inc. | Atomic layer deposition of tantalum based barrier materials |
| US7192824B2 (en) | 2003-06-24 | 2007-03-20 | Micron Technology, Inc. | Lanthanide oxide / hafnium oxide dielectric layers |
| US6955072B2 (en) | 2003-06-25 | 2005-10-18 | Mks Instruments, Inc. | System and method for in-situ flow verification and calibration |
| DE10328660B3 (de) | 2003-06-26 | 2004-12-02 | Infineon Technologies Ag | Verfahren zum Bestimmen der Temperatur eines Halbleiterwafers |
| KR20050001793A (ko) | 2003-06-26 | 2005-01-07 | 삼성전자주식회사 | 단원자층 증착 공정의 실시간 분석 방법 |
| US7021330B2 (en) | 2003-06-26 | 2006-04-04 | Planar Systems, Inc. | Diaphragm valve with reliability enhancements for atomic layer deposition |
| ATE468421T1 (de) | 2003-06-27 | 2010-06-15 | Sundew Technologies Llc | Vorrichtung und verfahren zur steuerung des dampfdrucks einer chemikalienquelle |
| US20100129548A1 (en) | 2003-06-27 | 2010-05-27 | Sundew Technologies, Llc | Ald apparatus and method |
| US9725805B2 (en) | 2003-06-27 | 2017-08-08 | Spts Technologies Limited | Apparatus and method for controlled application of reactive vapors to produce thin films and coatings |
| US7833580B2 (en) | 2003-07-04 | 2010-11-16 | Samsung Electronics Co., Ltd. | Method of forming a carbon nano-material layer using a cyclic deposition technique |
| US7547363B2 (en) | 2003-07-08 | 2009-06-16 | Tosoh Finechem Corporation | Solid organometallic compound-filled container and filling method thereof |
| US20070012402A1 (en) | 2003-07-08 | 2007-01-18 | Sundew Technologies, Llc | Apparatus and method for downstream pressure control and sub-atmospheric reactive gas abatement |
| KR100512180B1 (ko) | 2003-07-10 | 2005-09-02 | 삼성전자주식회사 | 자기 랜덤 엑세스 메모리 소자의 자기 터널 접합 및 그의형성방법 |
| US7055875B2 (en) | 2003-07-11 | 2006-06-06 | Asyst Technologies, Inc. | Ultra low contact area end effector |
| KR100541050B1 (ko) | 2003-07-22 | 2006-01-11 | 삼성전자주식회사 | 가스공급장치 및 이를 이용한 반도체소자 제조설비 |
| JP4298421B2 (ja) | 2003-07-23 | 2009-07-22 | エスペック株式会社 | サーマルプレートおよび試験装置 |
| US6909839B2 (en) | 2003-07-23 | 2005-06-21 | Advanced Technology Materials, Inc. | Delivery systems for efficient vaporization of precursor source material |
| JP2007505477A (ja) | 2003-07-23 | 2007-03-08 | エーエスエム アメリカ インコーポレイテッド | シリコン−オン−インシュレーター構造及びバルク基板に対するＳｉＧｅの堆積 |
| US7122481B2 (en) | 2003-07-25 | 2006-10-17 | Intel Corporation | Sealing porous dielectrics with silane coupling reagents |
| US20050019960A1 (en) | 2003-07-25 | 2005-01-27 | Moon-Sook Lee | Method and apparatus for forming a ferroelectric layer |
| ATE374936T1 (de) | 2003-07-25 | 2007-10-15 | Lightwind Corp | Verfahren und vorrichtung zur überwachung chemischer prozesse |
| US7399388B2 (en) | 2003-07-25 | 2008-07-15 | Applied Materials, Inc. | Sequential gas flow oxide deposition technique |
| KR100527672B1 (ko) | 2003-07-25 | 2005-11-28 | 삼성전자주식회사 | 서셉터 및 이를 포함하는 증착 장치 |
| US7361447B2 (en) | 2003-07-30 | 2008-04-22 | Hynix Semiconductor Inc. | Photoresist polymer and photoresist composition containing the same |
| TWI310850B (en) | 2003-08-01 | 2009-06-11 | Foxsemicon Integrated Tech Inc | Substrate supporting rod and substrate cassette using the same |
| WO2005017963A2 (en) | 2003-08-04 | 2005-02-24 | Asm America, Inc. | Surface preparation prior to deposition on germanium |
| US7695692B2 (en) | 2003-08-06 | 2010-04-13 | Sanderson William D | Apparatus and method for producing chlorine dioxide |
| WO2005015613A2 (en) | 2003-08-07 | 2005-02-17 | Sundew Technologies, Llc | Perimeter partition-valve with protected seals |
| KR100536604B1 (ko) | 2003-08-14 | 2005-12-14 | 삼성전자주식회사 | 고밀도 플라즈마 증착법을 이용한 갭필 방법 |
| US20050037578A1 (en) | 2003-08-14 | 2005-02-17 | Wei Wen Chen | [method for forming an oxide/ nitride/oxide stacked layer] |
| US6967305B2 (en) | 2003-08-18 | 2005-11-22 | Mks Instruments, Inc. | Control of plasma transitions in sputter processing systems |
| JP2005072405A (ja) | 2003-08-27 | 2005-03-17 | Sony Corp | 薄膜の形成方法および半導体装置の製造方法 |
| US7422635B2 (en) | 2003-08-28 | 2008-09-09 | Micron Technology, Inc. | Methods and apparatus for processing microfeature workpieces, e.g., for depositing materials on microfeature workpieces |
| US8152922B2 (en) | 2003-08-29 | 2012-04-10 | Asm America, Inc. | Gas mixer and manifold assembly for ALD reactor |
| JP3881973B2 (ja) | 2003-08-29 | 2007-02-14 | 三菱重工業株式会社 | 窒化シリコン膜の成膜方法 |
| EP1667217A1 (en) | 2003-09-03 | 2006-06-07 | Tokyo Electron Limited | Gas treatment device and heat readiting method |
| JP4235066B2 (ja) | 2003-09-03 | 2009-03-04 | 日本エー・エス・エム株式会社 | 薄膜形成方法 |
| US7179758B2 (en) | 2003-09-03 | 2007-02-20 | International Business Machines Corporation | Recovery of hydrophobicity of low-k and ultra low-k organosilicate films used as inter metal dielectrics |
| JP4563729B2 (ja) | 2003-09-04 | 2010-10-13 | 東京エレクトロン株式会社 | プラズマ処理装置 |
| US7235482B2 (en) | 2003-09-08 | 2007-06-26 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method of manufacturing a contact interconnection layer containing a metal and nitrogen by atomic layer deposition for deep sub-micron semiconductor technology |
| US7335277B2 (en) | 2003-09-08 | 2008-02-26 | Hitachi High-Technologies Corporation | Vacuum processing apparatus |
| KR100551138B1 (ko) | 2003-09-09 | 2006-02-10 | 어댑티브프라즈마테크놀로지 주식회사 | 균일한 플라즈마 발생을 위한 적응형 플라즈마 소스 |
| US7414281B1 (en) | 2003-09-09 | 2008-08-19 | Spansion Llc | Flash memory with high-K dielectric material between substrate and gate |
| US6921711B2 (en) | 2003-09-09 | 2005-07-26 | International Business Machines Corporation | Method for forming metal replacement gate of high performance |
| US7132201B2 (en) | 2003-09-12 | 2006-11-07 | Micron Technology, Inc. | Transparent amorphous carbon structure in semiconductor devices |
| EP1668298A4 (en) | 2003-09-17 | 2010-04-14 | Sionex Corp | SEMICONDUCTOR FLOW GENERATOR AND ASSOCIATED SYSTEMS, USES AND METHODS |
| US7056806B2 (en) | 2003-09-17 | 2006-06-06 | Micron Technology, Inc. | Microfeature workpiece processing apparatus and methods for controlling deposition of materials on microfeature workpieces |
| CN1823404B (zh) | 2003-09-19 | 2012-08-29 | 株式会社日立国际电气 | 半导体装置的制造方法及衬底处理装置 |
| US6911399B2 (en) | 2003-09-19 | 2005-06-28 | Applied Materials, Inc. | Method of controlling critical dimension microloading of photoresist trimming process by selective sidewall polymer deposition |
| JP4356410B2 (ja) | 2003-09-22 | 2009-11-04 | 株式会社日立製作所 | 化学物質探知装置及び化学物質探知方法 |
| US20070137794A1 (en) | 2003-09-24 | 2007-06-21 | Aviza Technology, Inc. | Thermal processing system with across-flow liner |
| US20050098107A1 (en) | 2003-09-24 | 2005-05-12 | Du Bois Dale R. | Thermal processing system with cross-flow liner |
| JP4524554B2 (ja) | 2003-09-25 | 2010-08-18 | 信越化学工業株式会社 | γ，δ−不飽和カルボン酸及びそのシリルエステルの製造方法、カルボキシル基を有する有機ケイ素化合物及びその製造方法 |
| US20050121145A1 (en) | 2003-09-25 | 2005-06-09 | Du Bois Dale R. | Thermal processing system with cross flow injection system with rotatable injectors |
| US7156380B2 (en) | 2003-09-29 | 2007-01-02 | Asm International, N.V. | Safe liquid source containers |
| US6875677B1 (en) | 2003-09-30 | 2005-04-05 | Sharp Laboratories Of America, Inc. | Method to control the interfacial layer for deposition of high dielectric constant films |
| US7205247B2 (en) | 2003-09-30 | 2007-04-17 | Aviza Technology, Inc. | Atomic layer deposition of hafnium-based high-k dielectric |
| US20050069651A1 (en) | 2003-09-30 | 2005-03-31 | Tokyo Electron Limited | Plasma processing system |
| US6825106B1 (en) | 2003-09-30 | 2004-11-30 | Sharp Laboratories Of America, Inc. | Method of depositing a conductive niobium monoxide film for MOSFET gates |
| US6982046B2 (en) | 2003-10-01 | 2006-01-03 | General Electric Company | Light sources with nanometer-sized VUV radiation-absorbing phosphors |
| US7052757B2 (en) | 2003-10-03 | 2006-05-30 | Hewlett-Packard Development Company, L.P. | Capping layer for enhanced performance media |
| US7408225B2 (en) | 2003-10-09 | 2008-08-05 | Asm Japan K.K. | Apparatus and method for forming thin film using upstream and downstream exhaust mechanisms |
| US8501594B2 (en) | 2003-10-10 | 2013-08-06 | Applied Materials, Inc. | Methods for forming silicon germanium layers |
| US7166528B2 (en) | 2003-10-10 | 2007-01-23 | Applied Materials, Inc. | Methods of selective deposition of heavily doped epitaxial SiGe |
| US7647886B2 (en) | 2003-10-15 | 2010-01-19 | Micron Technology, Inc. | Systems for depositing material onto workpieces in reaction chambers and methods for removing byproducts from reaction chambers |
| JP4274017B2 (ja) | 2003-10-15 | 2009-06-03 | 株式会社島津製作所 | 成膜装置 |
| US6974781B2 (en) | 2003-10-20 | 2005-12-13 | Asm International N.V. | Reactor precoating for reduced stress and uniform CVD |
| JP2005123532A (ja) | 2003-10-20 | 2005-05-12 | Tokyo Electron Ltd | 成膜装置及び成膜方法 |
| US7094613B2 (en) | 2003-10-21 | 2006-08-22 | Applied Materials, Inc. | Method for controlling accuracy and repeatability of an etch process |
| US20050092439A1 (en) | 2003-10-29 | 2005-05-05 | Keeton Tony J. | Low/high temperature substrate holder to reduce edge rolloff and backside damage |
| KR100587669B1 (ko) | 2003-10-29 | 2006-06-08 | 삼성전자주식회사 | 반도체 장치에서의 저항 소자 형성방법. |
| US7108753B2 (en) | 2003-10-29 | 2006-09-19 | Asm America, Inc. | Staggered ribs on process chamber to reduce thermal effects |
| JP2007511902A (ja) | 2003-10-29 | 2007-05-10 | エーエスエム アメリカ インコーポレイテッド | 薄膜成長用反応装置 |
| US20050095859A1 (en) | 2003-11-03 | 2005-05-05 | Applied Materials, Inc. | Precursor delivery system with rate control |
| US20050101843A1 (en) | 2003-11-06 | 2005-05-12 | Welch Allyn, Inc. | Wireless disposable physiological sensor |
| US7329947B2 (en) | 2003-11-07 | 2008-02-12 | Sumitomo Mitsubishi Silicon Corporation | Heat treatment jig for semiconductor substrate |
| US8313277B2 (en) | 2003-11-10 | 2012-11-20 | Brooks Automation, Inc. | Semiconductor manufacturing process modules |
| US7071118B2 (en) | 2003-11-12 | 2006-07-04 | Veeco Instruments, Inc. | Method and apparatus for fabricating a conformal thin film on a substrate |
| US20050153571A1 (en) | 2003-11-17 | 2005-07-14 | Yoshihide Senzaki | Nitridation of high-k dielectric films |
| JP4320323B2 (ja) | 2003-11-20 | 2009-08-26 | 株式会社日立国際電気 | 半導体装置の製造方法及び基板処理装置 |
| KR100550641B1 (ko) | 2003-11-22 | 2006-02-09 | 주식회사 하이닉스반도체 | 산화하프늄과 산화알루미늄이 혼합된 유전막 및 그 제조방법 |
| US7055263B2 (en) | 2003-11-25 | 2006-06-06 | Air Products And Chemicals, Inc. | Method for cleaning deposition chambers for high dielectric constant materials |
| KR20050053417A (ko) | 2003-12-02 | 2005-06-08 | 한국전자통신연구원 | 래디칼 보조 산화 장치 |
| US20050120805A1 (en) | 2003-12-04 | 2005-06-09 | John Lane | Method and apparatus for substrate temperature control |
| KR20050054122A (ko) | 2003-12-04 | 2005-06-10 | 성명모 | 자외선 원자층 증착법을 이용한 박막 제조 방법 |
| JP4725085B2 (ja) | 2003-12-04 | 2011-07-13 | 株式会社豊田中央研究所 | 非晶質炭素、非晶質炭素被膜部材および非晶質炭素膜の成膜方法 |
| US7143897B1 (en) | 2003-12-09 | 2006-12-05 | H20 International, Inc. | Water filter |
| US7431966B2 (en) | 2003-12-09 | 2008-10-07 | Micron Technology, Inc. | Atomic layer deposition method of depositing an oxide on a substrate |
| JP2005172489A (ja) | 2003-12-09 | 2005-06-30 | Tokyo Yogyo Co Ltd | 溶湯用測温プローブ |
| KR100519798B1 (ko) | 2003-12-11 | 2005-10-10 | 삼성전자주식회사 | 향상된 생산성을 갖는 박막 형성 방법 |
| US7301623B1 (en) | 2003-12-16 | 2007-11-27 | Nanometrics Incorporated | Transferring, buffering and measuring a substrate in a metrology system |
| US7220497B2 (en) | 2003-12-18 | 2007-05-22 | Lam Research Corporation | Yttria-coated ceramic components of semiconductor material processing apparatuses and methods of manufacturing the components |
| US7569193B2 (en) | 2003-12-19 | 2009-08-04 | Applied Materials, Inc. | Apparatus and method for controlled combustion of gaseous pollutants |
| US20050133166A1 (en) | 2003-12-19 | 2005-06-23 | Applied Materials, Inc. | Tuned potential pedestal for mask etch processing apparatus |
| EP1709214A1 (en) | 2003-12-22 | 2006-10-11 | Seco Tools Ab | Carrier body and method for coating cutting tools. |
| US7662689B2 (en) | 2003-12-23 | 2010-02-16 | Intel Corporation | Strained transistor integration for CMOS |
| US7645341B2 (en) | 2003-12-23 | 2010-01-12 | Lam Research Corporation | Showerhead electrode assembly for plasma processing apparatuses |
| US20050148162A1 (en) | 2004-01-02 | 2005-07-07 | Huajie Chen | Method of preventing surface roughening during hydrogen pre-bake of SiGe substrates using chlorine containing gases |
| KR100620673B1 (ko) | 2004-01-05 | 2006-09-13 | 주식회사 하이닉스반도체 | 포토레지스트 세정액 조성물 및 이를 이용한 패턴 형성 방법 |
| KR100593960B1 (ko) | 2004-01-09 | 2006-06-30 | 병호 최 | 광원자층 증착장치 및 증착방법 |
| US7892357B2 (en) | 2004-01-12 | 2011-02-22 | Axcelis Technologies, Inc. | Gas distribution plate assembly for plasma reactors |
| JP4583764B2 (ja) | 2004-01-14 | 2010-11-17 | ルネサスエレクトロニクス株式会社 | 半導体装置およびその製造方法 |
| KR100549273B1 (ko) | 2004-01-15 | 2006-02-03 | 주식회사 테라세미콘 | 반도체 제조장치의 기판홀더 |
| JP4513329B2 (ja) | 2004-01-16 | 2010-07-28 | 東京エレクトロン株式会社 | 処理装置 |
| USD535673S1 (en) | 2004-01-16 | 2007-01-23 | Thermal Dynamics Corporation | Gas distributor for a plasma arc torch |
| US7071051B1 (en) | 2004-01-20 | 2006-07-04 | Advanced Micro Devices, Inc. | Method for forming a thin, high quality buffer layer in a field effect transistor and related structure |
| US7005227B2 (en) | 2004-01-21 | 2006-02-28 | Intel Corporation | One component EUV photoresist |
| US7128570B2 (en) | 2004-01-21 | 2006-10-31 | Asm International N.V. | Method and apparatus for purging seals in a thermal reactor |
| US7531467B2 (en) | 2004-01-21 | 2009-05-12 | Hitachi Kokusai Electric, Inc. | Manufacturing method of semiconductor device and substrate processing apparatus |
| US7354847B2 (en) | 2004-01-26 | 2008-04-08 | Taiwan Semiconductor Manufacturing Company | Method of trimming technology |
| US20050164469A1 (en) | 2004-01-28 | 2005-07-28 | Infineon Technologies North America Corp. | Method for N+ doping of amorphous silicon and polysilicon electrodes in deep trenches |
| JP4722501B2 (ja) | 2004-01-29 | 2011-07-13 | 三星電子株式会社 | 半導体素子の多層誘電体構造物、半導体及びその製造方法 |
| KR101118863B1 (ko) | 2004-01-30 | 2012-03-19 | 도쿄엘렉트론가부시키가이샤 | 유체 간극을 갖는 기판 홀더 및 그 기판 홀더를 제조하는방법 |
| US7163393B2 (en) | 2004-02-02 | 2007-01-16 | Sumitomo Mitsubishi Silicon Corporation | Heat treatment jig for semiconductor silicon substrate |
| DE102004005385A1 (de) | 2004-02-03 | 2005-10-20 | Infineon Technologies Ag | Verwendung von gelösten Hafniumalkoxiden bzw. Zirkoniumalkoxiden als Precursoren für Hafniumoxid- und Hafniumoxynitridschichten bzw. Zirkoniumoxid- und Zirkoniumoxynitridschichten |
| US20050229849A1 (en) | 2004-02-13 | 2005-10-20 | Applied Materials, Inc. | High productivity plasma processing chamber |
| JP4364667B2 (ja) | 2004-02-13 | 2009-11-18 | 東京エレクトロン株式会社 | 溶射部材、電極、およびプラズマ処理装置 |
| KR101112029B1 (ko) | 2004-02-13 | 2012-03-21 | 에이에스엠 아메리카, 인코포레이티드 | 자동 도핑 및 후면 증착의 감소를 위한 기판 지지 시스템 |
| US20050181535A1 (en) | 2004-02-17 | 2005-08-18 | Yun Sun J. | Method of fabricating passivation layer for organic devices |
| TWI263709B (en) | 2004-02-17 | 2006-10-11 | Ind Tech Res Inst | Structure of strain relaxed thin Si/Ge epitaxial layer and fabricating method thereof |
| US20050178333A1 (en) | 2004-02-18 | 2005-08-18 | Asm Japan K.K. | System and method of CVD chamber cleaning |
| US7088003B2 (en) | 2004-02-19 | 2006-08-08 | International Business Machines Corporation | Structures and methods for integration of ultralow-k dielectrics with improved reliability |
| US20050187647A1 (en) | 2004-02-19 | 2005-08-25 | Kuo-Hua Wang | Intelligent full automation controlled flow for a semiconductor furnace tool |
| JP4698251B2 (ja) | 2004-02-24 | 2011-06-08 | アプライド マテリアルズ インコーポレイテッド | 可動又は柔軟なシャワーヘッド取り付け |
| US20100297391A1 (en) | 2004-02-25 | 2010-11-25 | General Nanotechnoloy Llc | Diamond capsules and methods of manufacture |
| US7958842B2 (en) | 2004-02-27 | 2011-06-14 | Hitachi Kokusai Electric Inc. | Substrate processing apparatus |
| USD525127S1 (en) | 2004-03-01 | 2006-07-18 | Kraft Foods Holdings, Inc. | Susceptor ring |
| US20060062910A1 (en) | 2004-03-01 | 2006-03-23 | Meiere Scott H | Low zirconium, hafnium-containing compositions, processes for the preparation thereof and methods of use thereof |
| US20050214458A1 (en) | 2004-03-01 | 2005-09-29 | Meiere Scott H | Low zirconium hafnium halide compositions |
| WO2005086331A2 (en) | 2004-03-02 | 2005-09-15 | Rosemount, Inc. | Process device with improved power generation |
| US7407893B2 (en) | 2004-03-05 | 2008-08-05 | Applied Materials, Inc. | Liquid precursors for the CVD deposition of amorphous carbon films |
| CN100373545C (zh) | 2004-03-05 | 2008-03-05 | 东京毅力科创株式会社 | 基板处理装置、基板处理方法及程序 |
| US20050233477A1 (en) | 2004-03-05 | 2005-10-20 | Tokyo Electron Limited | Substrate processing apparatus, substrate processing method, and program for implementing the method |
| US7098150B2 (en) | 2004-03-05 | 2006-08-29 | Air Liquide America L.P. | Method for novel deposition of high-k MSiON dielectric films |
| JP4246654B2 (ja) | 2004-03-08 | 2009-04-02 | 株式会社日立ハイテクノロジーズ | 真空処理装置 |
| CA2558996A1 (en) | 2004-03-08 | 2005-09-22 | Adc Telecommunications, Inc. | Fiber access terminal |
| US7072743B2 (en) | 2004-03-09 | 2006-07-04 | Mks Instruments, Inc. | Semiconductor manufacturing gas flow divider system and method |
| US7079740B2 (en) | 2004-03-12 | 2006-07-18 | Applied Materials, Inc. | Use of amorphous carbon film as a hardmask in the fabrication of optical waveguides |
| KR100538096B1 (ko) | 2004-03-16 | 2005-12-21 | 삼성전자주식회사 | 원자층 증착 방법을 이용하는 커패시터 형성 방법 |
| US7053010B2 (en) | 2004-03-22 | 2006-05-30 | Micron Technology, Inc. | Methods of depositing silicon dioxide comprising layers in the fabrication of integrated circuitry, methods of forming trench isolation, and methods of forming arrays of memory cells |
| US7582555B1 (en) | 2005-12-29 | 2009-09-01 | Novellus Systems, Inc. | CVD flowable gap fill |
| US7524735B1 (en) | 2004-03-25 | 2009-04-28 | Novellus Systems, Inc | Flowable film dielectric gap fill process |
| US7074690B1 (en) | 2004-03-25 | 2006-07-11 | Novellus Systems, Inc. | Selective gap-fill process |
| US20050214457A1 (en) | 2004-03-29 | 2005-09-29 | Applied Materials, Inc. | Deposition of low dielectric constant films by N2O addition |
| US20050221618A1 (en) | 2004-03-31 | 2005-10-06 | Amrhein Frederick J | System for controlling a plenum output flow geometry |
| WO2005098922A1 (ja) | 2004-03-31 | 2005-10-20 | Hitachi Kokusai Electric Inc. | 半導体装置の製造方法 |
| US20050221021A1 (en) | 2004-03-31 | 2005-10-06 | Tokyo Electron Limited | Method and system for performing atomic layer deposition |
| CN1292092C (zh) | 2004-04-01 | 2006-12-27 | 南昌大学 | 用于金属有机化学气相沉积设备的双层进气喷头 |
| US7585371B2 (en) | 2004-04-08 | 2009-09-08 | Micron Technology, Inc. | Substrate susceptors for receiving semiconductor substrates to be deposited upon |
| US20050227502A1 (en) | 2004-04-12 | 2005-10-13 | Applied Materials, Inc. | Method for forming an ultra low dielectric film by forming an organosilicon matrix and large porogens as a template for increased porosity |
| US7273526B2 (en) | 2004-04-15 | 2007-09-25 | Asm Japan K.K. | Thin-film deposition apparatus |
| US20060019502A1 (en) | 2004-07-23 | 2006-01-26 | Park Beom S | Method of controlling the film properties of a CVD-deposited silicon nitride film |
| US8083853B2 (en) | 2004-05-12 | 2011-12-27 | Applied Materials, Inc. | Plasma uniformity control by gas diffuser hole design |
| US7785672B2 (en) | 2004-04-20 | 2010-08-31 | Applied Materials, Inc. | Method of controlling the film properties of PECVD-deposited thin films |
| USD553104S1 (en) | 2004-04-21 | 2007-10-16 | Tokyo Electron Limited | Absorption board for an electric chuck used in semiconductor manufacture |
| US7018941B2 (en) | 2004-04-21 | 2006-03-28 | Applied Materials, Inc. | Post treatment of low k dielectric films |
| KR100840705B1 (ko) | 2004-04-21 | 2008-06-24 | 가부시키가이샤 히다치 고쿠사이 덴키 | 열처리장치 |
| US20050238807A1 (en) | 2004-04-27 | 2005-10-27 | Applied Materials, Inc. | Refurbishment of a coated chamber component |
| US20070066038A1 (en) | 2004-04-30 | 2007-03-22 | Lam Research Corporation | Fast gas switching plasma processing apparatus |
| US7708859B2 (en) | 2004-04-30 | 2010-05-04 | Lam Research Corporation | Gas distribution system having fast gas switching capabilities |
| DE602005027196D1 (de) | 2004-04-30 | 2011-05-12 | Dichroic Cell S R L | Verfahren zur herstellung von virtuellen ge-substraten zur iii/v-integration auf si(001) |
| US7712434B2 (en) | 2004-04-30 | 2010-05-11 | Lam Research Corporation | Apparatus including showerhead electrode and heater for plasma processing |
| US6982208B2 (en) | 2004-05-03 | 2006-01-03 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method for producing high throughput strained-Si channel MOSFETS |
| US7049247B2 (en) | 2004-05-03 | 2006-05-23 | International Business Machines Corporation | Method for fabricating an ultralow dielectric constant material as an intralevel or interlevel dielectric in a semiconductor device and electronic device made |
| JP2005322668A (ja) | 2004-05-06 | 2005-11-17 | Renesas Technology Corp | 成膜装置および成膜方法 |
| US7109114B2 (en) | 2004-05-07 | 2006-09-19 | Applied Materials, Inc. | HDP-CVD seasoning process for high power HDP-CVD gapfil to improve particle performance |
| US7202148B2 (en) | 2004-05-10 | 2007-04-10 | Taiwan Semiconductor Manufacturing Company | Method utilizing compensation features in semiconductor processing |
| US20050252447A1 (en) | 2004-05-11 | 2005-11-17 | Applied Materials, Inc. | Gas blocker plate for improved deposition |
| WO2005109486A1 (en) | 2004-05-12 | 2005-11-17 | Viatron Technologies Inc. | System for heat treatment of semiconductor device |
| US8328939B2 (en) | 2004-05-12 | 2012-12-11 | Applied Materials, Inc. | Diffuser plate with slit valve compensation |
| US8074599B2 (en) | 2004-05-12 | 2011-12-13 | Applied Materials, Inc. | Plasma uniformity control by gas diffuser curvature |
| US20050252449A1 (en) | 2004-05-12 | 2005-11-17 | Nguyen Son T | Control of gas flow and delivery to suppress the formation of particles in an MOCVD/ALD system |
| US7748138B2 (en) | 2004-05-13 | 2010-07-06 | Tokyo Electron Limited | Particle removal method for a substrate transfer mechanism and apparatus |
| JP5042820B2 (ja) | 2004-05-14 | 2012-10-03 | ベクトン・ディキンソン・アンド・カンパニー | 生物活性表面を有する物品およびそれらの無溶媒調製法 |
| KR100889437B1 (ko) | 2004-05-18 | 2009-03-24 | 가부시키가이샤 섬코 | 기상 성장 장치용 서셉터 |
| KR100469132B1 (ko) | 2004-05-18 | 2005-01-29 | 주식회사 아이피에스 | 주기적 펄스 두 단계 플라즈마 원자층 증착장치 및 방법 |
| US20060019033A1 (en) | 2004-05-21 | 2006-01-26 | Applied Materials, Inc. | Plasma treatment of hafnium-containing materials |
| US8119210B2 (en) | 2004-05-21 | 2012-02-21 | Applied Materials, Inc. | Formation of a silicon oxynitride layer on a high-k dielectric material |
| JP2005340251A (ja) | 2004-05-24 | 2005-12-08 | Shin Etsu Chem Co Ltd | プラズマ処理装置用のシャワープレート及びプラズマ処理装置 |
| US7271093B2 (en) | 2004-05-24 | 2007-09-18 | Asm Japan K.K. | Low-carbon-doped silicon oxide film and damascene structure using same |
| US7396746B2 (en) | 2004-05-24 | 2008-07-08 | Varian Semiconductor Equipment Associates, Inc. | Methods for stable and repeatable ion implantation |
| US20050266173A1 (en) | 2004-05-26 | 2005-12-01 | Tokyo Electron Limited | Method and apparatus of distributed plasma processing system for conformal ion stimulated nanoscale deposition process |
| US7622005B2 (en) | 2004-05-26 | 2009-11-24 | Applied Materials, Inc. | Uniformity control for low flow process and chamber to chamber matching |
| US7229502B2 (en) | 2004-05-27 | 2007-06-12 | Macronix International Co., Ltd. | Method of forming a silicon nitride layer |
| JP3972126B2 (ja) | 2004-05-28 | 2007-09-05 | 独立行政法人産業技術総合研究所 | 紫外線発生源、紫外線照射処理装置及び半導体製造装置 |
| US7580388B2 (en) | 2004-06-01 | 2009-08-25 | Lg Electronics Inc. | Method and apparatus for providing enhanced messages on common control channel in wireless communication system |
| JP4503356B2 (ja) | 2004-06-02 | 2010-07-14 | 東京エレクトロン株式会社 | 基板処理方法および半導体装置の製造方法 |
| US7699932B2 (en) | 2004-06-02 | 2010-04-20 | Micron Technology, Inc. | Reactors, systems and methods for depositing thin films onto microfeature workpieces |
| US7651583B2 (en) | 2004-06-04 | 2010-01-26 | Tokyo Electron Limited | Processing system and method for treating a substrate |
| US7037794B2 (en) | 2004-06-09 | 2006-05-02 | International Business Machines Corporation | Raised STI process for multiple gate ox and sidewall protection on strained Si/SGOI structure with elevated source/drain |
| US7396743B2 (en) | 2004-06-10 | 2008-07-08 | Singh Kaushal K | Low temperature epitaxial growth of silicon-containing films using UV radiation |
| KR100589062B1 (ko) | 2004-06-10 | 2006-06-12 | 삼성전자주식회사 | 원자층 적층 방식의 박막 형성방법 및 이를 이용한 반도체소자의 커패시터 형성방법 |
| DE602005017272D1 (de) | 2004-06-10 | 2009-12-03 | Humanscale Corp | Mechanismus für die positionsverstellung einer angebrachten vorrichtung |
| US7132360B2 (en) | 2004-06-10 | 2006-11-07 | Freescale Semiconductor, Inc. | Method for treating a semiconductor surface to form a metal-containing layer |
| JP4565897B2 (ja) | 2004-06-14 | 2010-10-20 | 株式会社Adeka | 薄膜形成用原料及び薄膜の製造方法 |
| GB0413554D0 (en) | 2004-06-17 | 2004-07-21 | Point 35 Microstructures Ltd | Improved method and apparartus for the etching of microstructures |
| US7399570B2 (en) | 2004-06-18 | 2008-07-15 | Hynix Semiconductor Inc. | Water-soluble negative photoresist polymer and composition containing the same |
| DE112005001429T5 (de) | 2004-06-18 | 2007-04-26 | Innovalight, Inc., St. Paul | Verfahren und Vorrichtung zum Bilden von Nanopartikeln unter Verwendung von Hochfrequenzplasmen |
| TWI574318B (zh) | 2004-06-21 | 2017-03-11 | Tokyo Electron Ltd | A plasma processing apparatus, a plasma processing method, and a computer-readable recording medium |
| US7951262B2 (en) | 2004-06-21 | 2011-05-31 | Tokyo Electron Limited | Plasma processing apparatus and method |
| JP4534619B2 (ja) | 2004-06-21 | 2010-09-01 | 株式会社Sumco | 半導体シリコン基板用熱処理治具 |
| US20050282350A1 (en) | 2004-06-22 | 2005-12-22 | You-Hua Chou | Atomic layer deposition for filling a gap between devices |
| KR20050121426A (ko) | 2004-06-22 | 2005-12-27 | 삼성에스디아이 주식회사 | 탄소나노튜브 제조용 촉매의 제조 방법 |
| US7244958B2 (en) | 2004-06-24 | 2007-07-17 | International Business Machines Corporation | Integration of strained Ge into advanced CMOS technology |
| US20050284573A1 (en) | 2004-06-24 | 2005-12-29 | Egley Fred D | Bare aluminum baffles for resist stripping chambers |
| US7073834B2 (en) | 2004-06-25 | 2006-07-11 | Applied Materials, Inc. | Multiple section end effector assembly |
| US20050285208A1 (en) | 2004-06-25 | 2005-12-29 | Chi Ren | Metal gate electrode for semiconductor devices |
| EP1771598B1 (en) | 2004-06-28 | 2009-09-30 | Cambridge Nanotech Inc. | Atomic layer deposition (ald) system and method |
| US20060006538A1 (en) | 2004-07-02 | 2006-01-12 | Lsi Logic Corporation | Extreme low-K interconnect structure and method |
| KR100614801B1 (ko) | 2004-07-05 | 2006-08-22 | 삼성전자주식회사 | 반도체 장치의 막 형성방법 |
| US7363195B2 (en) | 2004-07-07 | 2008-04-22 | Sensarray Corporation | Methods of configuring a sensor network |
| WO2006006129A2 (en) | 2004-07-09 | 2006-01-19 | Philips Intellectual Property & Standards Gmbh | Uvc/vuv dielectric barrier discharge lamp with reflector |
| US9111972B2 (en) | 2004-07-13 | 2015-08-18 | Hitachi Kokusai Electric Inc. | Substrate processing apparatus and manufacturing method for a semiconductor device |
| US7422653B2 (en) | 2004-07-13 | 2008-09-09 | Applied Materials, Inc. | Single-sided inflatable vertical slit valve |
| US7094442B2 (en) | 2004-07-13 | 2006-08-22 | Applied Materials, Inc. | Methods for the reduction and elimination of particulate contamination with CVD of amorphous carbon |
| JP4674061B2 (ja) | 2004-07-14 | 2011-04-20 | 株式会社アルバック | 薄膜形成方法 |
| US7409263B2 (en) | 2004-07-14 | 2008-08-05 | Applied Materials, Inc. | Methods and apparatus for repositioning support for a substrate carrier |
| KR100578819B1 (ko) | 2004-07-15 | 2006-05-11 | 삼성전자주식회사 | 원자층 적층 방법과 이를 이용한 게이트 구조물의 제조방법 및 커패시터의 제조 방법 |
| US7241686B2 (en) | 2004-07-20 | 2007-07-10 | Applied Materials, Inc. | Atomic layer deposition of tantalum-containing materials using the tantalum precursor TAIMATA |
| US20060016783A1 (en) | 2004-07-22 | 2006-01-26 | Dingjun Wu | Process for titanium nitride removal |
| JP4179311B2 (ja) | 2004-07-28 | 2008-11-12 | 東京エレクトロン株式会社 | 成膜方法、成膜装置及び記憶媒体 |
| US20060021703A1 (en) | 2004-07-29 | 2006-02-02 | Applied Materials, Inc. | Dual gas faceplate for a showerhead in a semiconductor wafer processing system |
| WO2006011169A1 (en) | 2004-07-30 | 2006-02-02 | Lpe Spa | Epitaxial reactor with susceptor controlled positioning |
| US20060021572A1 (en) | 2004-07-30 | 2006-02-02 | Colorado School Of Mines | High Vacuum Plasma-Assisted Chemical Vapor Deposition System |
| US7689687B2 (en) | 2004-07-30 | 2010-03-30 | Fisher-Rosemount Systems, Inc. | Communication controller with automatic time stamping |
| KR100689401B1 (ko) | 2004-07-30 | 2007-03-08 | 주식회사 하이닉스반도체 | 포토레지스트 중합체 및 이를 함유하는 포토레지스트 조성물 |
| JP4417197B2 (ja) | 2004-07-30 | 2010-02-17 | 住友大阪セメント株式会社 | サセプタ装置 |
| US7601649B2 (en) | 2004-08-02 | 2009-10-13 | Micron Technology, Inc. | Zirconium-doped tantalum oxide films |
| JP4570659B2 (ja) | 2004-08-04 | 2010-10-27 | インダストリー−ユニヴァーシティ コオペレーション ファウンデーション ハニャン ユニヴァーシティ | Ｄｃバイアスを利用したリモートプラズマ原子層蒸着装置及び方法 |
| JP4718141B2 (ja) | 2004-08-06 | 2011-07-06 | 東京エレクトロン株式会社 | 薄膜形成方法及び薄膜形成装置 |
| US7470633B2 (en) | 2004-08-09 | 2008-12-30 | Asm Japan K.K. | Method of forming a carbon polymer film using plasma CVD |
| US7955646B2 (en) | 2004-08-09 | 2011-06-07 | Applied Materials, Inc. | Elimination of flow and pressure gradients in low utilization processes |
| US7504344B2 (en) | 2004-08-09 | 2009-03-17 | Asm Japan K.K. | Method of forming a carbon polymer film using plasma CVD |
| KR101114219B1 (ko) | 2004-08-09 | 2012-03-05 | 주성엔지니어링(주) | 광원을 포함하는 원자층 증착장치 및 이를 이용한 증착방법 |
| US20060110930A1 (en) | 2004-08-16 | 2006-05-25 | Yoshihide Senzaki | Direct liquid injection system and method for forming multi-component dielectric films |
| JP2006059931A (ja) | 2004-08-18 | 2006-03-02 | Canon Anelva Corp | 急速加熱処理装置 |
| US20060040054A1 (en) | 2004-08-18 | 2006-02-23 | Pearlstein Ronald M | Passivating ALD reactor chamber internal surfaces to prevent residue buildup |
| US7119032B2 (en) | 2004-08-23 | 2006-10-10 | Air Products And Chemicals, Inc. | Method to protect internal components of semiconductor processing equipment using layered superlattice materials |
| JP4348542B2 (ja) | 2004-08-24 | 2009-10-21 | 信越半導体株式会社 | 石英治具及び半導体製造装置 |
| USD524600S1 (en) | 2004-08-26 | 2006-07-11 | Maytag Corporation | Convection cover for cooking appliance |
| KR101071136B1 (ko) | 2004-08-27 | 2011-10-10 | 엘지디스플레이 주식회사 | 평판표시장치의 제조를 위한 기판의 박막처리장치 |
| ITMI20041677A1 (it) | 2004-08-30 | 2004-11-30 | E T C Epitaxial Technology Ct | Processo di pulitura e processo operativo per un reattore cvd. |
| US8158488B2 (en) | 2004-08-31 | 2012-04-17 | Micron Technology, Inc. | Method of increasing deposition rate of silicon dioxide on a catalyst |
| DE102004042431B4 (de) | 2004-08-31 | 2008-07-03 | Schott Ag | Verfahren und Vorrichtung zur Plasmabeschichtung von Werkstücken mit spektraler Auswertung der Prozessparameter und Verwendung der Vorrichtung |
| US7910288B2 (en) | 2004-09-01 | 2011-03-22 | Micron Technology, Inc. | Mask material conversion |
| US7253084B2 (en) | 2004-09-03 | 2007-08-07 | Asm America, Inc. | Deposition from liquid sources |
| JP2006108629A (ja) | 2004-09-10 | 2006-04-20 | Toshiba Corp | 半導体装置の製造方法 |
| US20060137609A1 (en) | 2004-09-13 | 2006-06-29 | Puchacz Jerzy P | Multi-single wafer processing apparatus |
| WO2006034025A1 (en) | 2004-09-16 | 2006-03-30 | Arizona Board Of Regents | MATERIALS AND OPTICAL DEVICES BASED ON GROUP IV QUANTUM WELLS GROWN ON Si-Ge-Sn BUFFERED SILICON |
| US8084400B2 (en) | 2005-10-11 | 2011-12-27 | Intermolecular, Inc. | Methods for discretized processing and process sequence integration of regions of a substrate |
| US8882914B2 (en) | 2004-09-17 | 2014-11-11 | Intermolecular, Inc. | Processing substrates using site-isolated processing |
| US20060060930A1 (en) | 2004-09-17 | 2006-03-23 | Metz Matthew V | Atomic layer deposition of high dielectric constant gate dielectrics |
| JP4698190B2 (ja) | 2004-09-22 | 2011-06-08 | 川惣電機工業株式会社 | 測温装置 |
| JP4572100B2 (ja) | 2004-09-28 | 2010-10-27 | 日本エー・エス・エム株式会社 | プラズマ処理装置 |
| JP2006097044A (ja) | 2004-09-28 | 2006-04-13 | L'air Liquide Sa Pour L'etude & L'exploitation Des Procede S Georges Claude | 成膜用前駆体、ルテニウム含有膜の成膜方法、ルテニウム膜の成膜方法、ルテニウム酸化物膜の成膜方法およびルテニウム酸塩膜の成膜方法 |
| DE102005045081B4 (de) | 2004-09-29 | 2011-07-07 | Covalent Materials Corp. | Suszeptor |
| US7806587B2 (en) | 2004-09-29 | 2010-10-05 | Citizen Holdings Co., Ltd. | Electronic clinical thermometer and method of producing the same |
| JP2006124832A (ja) | 2004-09-30 | 2006-05-18 | Nichias Corp | 気相成長装置及び気相成長法 |
| JP2006124831A (ja) | 2004-09-30 | 2006-05-18 | Nichias Corp | 気相成長用反応容器及び気相成長方法 |
| US7241475B2 (en) | 2004-09-30 | 2007-07-10 | The Aerospace Corporation | Method for producing carbon surface films by plasma exposure of a carbide compound |
| US7189431B2 (en) | 2004-09-30 | 2007-03-13 | Tokyo Electron Limited | Method for forming a passivated metal layer |
| US7361958B2 (en) | 2004-09-30 | 2008-04-22 | Intel Corporation | Nonplanar transistors with metal gate electrodes |
| US6874247B1 (en) | 2004-10-12 | 2005-04-05 | Tsang-Hung Hsu | Toothbrush dryer |
| US20060257563A1 (en) | 2004-10-13 | 2006-11-16 | Seok-Joo Doh | Method of fabricating silicon-doped metal oxide layer using atomic layer deposition technique |
| US20060099782A1 (en) | 2004-10-15 | 2006-05-11 | Massachusetts Institute Of Technology | Method for forming an interface between germanium and other materials |
| US7674726B2 (en) | 2004-10-15 | 2010-03-09 | Asm International N.V. | Parts for deposition reactors |
| US7427571B2 (en) | 2004-10-15 | 2008-09-23 | Asm International, N.V. | Reactor design for reduced particulate generation |
| US7780440B2 (en) | 2004-10-19 | 2010-08-24 | Canon Anelva Corporation | Substrate supporting/transferring tray |
| JP2006128188A (ja) | 2004-10-26 | 2006-05-18 | Nikon Corp | 基板搬送装置、基板搬送方法および露光装置 |
| US7790633B1 (en) | 2004-10-26 | 2010-09-07 | Novellus Systems, Inc. | Sequential deposition/anneal film densification method |
| KR100754386B1 (ko) | 2004-10-28 | 2007-08-31 | 삼성전자주식회사 | 양방향 화학기상증착 시스템 및 이를 이용한 펄스형 공정진행 방법 |
| US7163900B2 (en) | 2004-11-01 | 2007-01-16 | Infineon Technologies Ag | Using polydentate ligands for sealing pores in low-k dielectrics |
| US7189626B2 (en) | 2004-11-03 | 2007-03-13 | Micron Technology, Inc. | Electroless plating of metal caps for chalcogenide-based memory devices |
| US20060093756A1 (en) | 2004-11-03 | 2006-05-04 | Nagarajan Rajagopalan | High-power dielectric seasoning for stable wafer-to-wafer thickness uniformity of dielectric CVD films |
| US7727880B1 (en) | 2004-11-03 | 2010-06-01 | Novellus Systems, Inc. | Protective self-aligned buffer layers for damascene interconnects |
| JP2006135161A (ja) | 2004-11-08 | 2006-05-25 | Canon Inc | 絶縁膜の形成方法及び装置 |
| KR100728962B1 (ko) | 2004-11-08 | 2007-06-15 | 주식회사 하이닉스반도체 | 지르코늄산화막을 갖는 반도체소자의 캐패시터 및 그 제조방법 |
| JP4435666B2 (ja) | 2004-11-09 | 2010-03-24 | 東京エレクトロン株式会社 | プラズマ処理方法、成膜方法 |
| KR100742276B1 (ko) | 2004-11-10 | 2007-07-24 | 삼성전자주식회사 | 저유전율 유전막을 제거하기 위한 식각 용액 및 이를이용한 저유전율 유전막 식각 방법 |
| KR100782369B1 (ko) | 2004-11-11 | 2007-12-07 | 삼성전자주식회사 | 반도체 제조장치 |
| US7678682B2 (en) | 2004-11-12 | 2010-03-16 | Axcelis Technologies, Inc. | Ultraviolet assisted pore sealing of porous low k dielectric films |
| US7428958B2 (en) | 2004-11-15 | 2008-09-30 | Nikon Corporation | Substrate conveyor apparatus, substrate conveyance method and exposure apparatus |
| US7242055B2 (en) | 2004-11-15 | 2007-07-10 | International Business Machines Corporation | Nitrogen-containing field effect transistor gate stack containing a threshold voltage control layer formed via deposition of a metal oxide |
| TWI588872B (zh) | 2004-11-18 | 2017-06-21 | 尼康股份有限公司 | Position measurement method, position control method, measurement method, loading method, exposure method and exposure apparatus, and device manufacturing method |
| KR100773755B1 (ko) | 2004-11-18 | 2007-11-09 | 주식회사 아이피에스 | 플라즈마 ａｌｄ 박막증착방법 |
| US20060107898A1 (en) | 2004-11-19 | 2006-05-25 | Blomberg Tom E | Method and apparatus for measuring consumption of reactants |
| US20070134821A1 (en) | 2004-11-22 | 2007-06-14 | Randhir Thakur | Cluster tool for advanced front-end processing |
| JP2008521261A (ja) | 2004-11-22 | 2008-06-19 | アプライド マテリアルズ インコーポレイテッド | バッチ処理チャンバを用いた基板処理装置 |
| US20060108221A1 (en) | 2004-11-24 | 2006-05-25 | William Goodwin | Method and apparatus for improving measuring accuracy in gas monitoring systems |
| ATE543925T1 (de) | 2004-11-24 | 2012-02-15 | Oerlikon Solar Ag | VAKUUMBEHANDLUNGSKAMMER FÜR SEHR GROßFLÄCHIGE SUBSTRATE |
| US7722737B2 (en) | 2004-11-29 | 2010-05-25 | Applied Materials, Inc. | Gas distribution system for improved transient phase deposition |
| JP4646752B2 (ja) | 2004-11-29 | 2011-03-09 | 株式会社神戸製鋼所 | 高配向ダイヤモンド膜及びその製造方法並びに高配向ダイヤモンド膜を備えた電子デバイス |
| JP4512098B2 (ja) | 2004-11-29 | 2010-07-28 | 株式会社日立国際電気 | 半導体装置の製造方法及び基板処理装置 |
| US20060113806A1 (en) | 2004-11-29 | 2006-06-01 | Asm Japan K.K. | Wafer transfer mechanism |
| US8435351B2 (en) | 2004-11-29 | 2013-05-07 | Tokyo Electron Limited | Method and system for measuring a flow rate in a solid precursor delivery system |
| JP2006153706A (ja) | 2004-11-30 | 2006-06-15 | Taiyo Nippon Sanso Corp | 測温体および気相成長装置 |
| JP4830290B2 (ja) | 2004-11-30 | 2011-12-07 | 信越半導体株式会社 | 直接接合ウェーハの製造方法 |
| US20060113675A1 (en) | 2004-12-01 | 2006-06-01 | Chung-Liang Chang | Barrier material and process for Cu interconnect |
| US20060118240A1 (en) | 2004-12-03 | 2006-06-08 | Applied Science And Technology, Inc. | Methods and apparatus for downstream dissociation of gases |
| US7368377B2 (en) | 2004-12-09 | 2008-05-06 | Interuniversitair Microelektronica Centrum (Imec) Vzw | Method for selective deposition of a thin self-assembled monolayer |
| US7271463B2 (en) | 2004-12-10 | 2007-09-18 | Micron Technology, Inc. | Trench insulation structures including an oxide liner that is thinner along the walls of the trench than along the base |
| US7235501B2 (en) | 2004-12-13 | 2007-06-26 | Micron Technology, Inc. | Lanthanum hafnium oxide dielectrics |
| US20060127067A1 (en) | 2004-12-13 | 2006-06-15 | General Electric Company | Fast heating and cooling wafer handling assembly and method of manufacturing thereof |
| KR100558922B1 (ko) | 2004-12-16 | 2006-03-10 | (주)퓨전에이드 | 박막 증착장치 및 방법 |
| US7290813B2 (en) | 2004-12-16 | 2007-11-06 | Asyst Technologies, Inc. | Active edge grip rest pad |
| US20060133955A1 (en) | 2004-12-17 | 2006-06-22 | Peters David W | Apparatus and method for delivering vapor phase reagent to a deposition chamber |
| US7396732B2 (en) | 2004-12-17 | 2008-07-08 | Interuniversitair Microelektronica Centrum Vzw (Imec) | Formation of deep trench airgaps and related applications |
| US7699021B2 (en) | 2004-12-22 | 2010-04-20 | Sokudo Co., Ltd. | Cluster tool substrate throughput optimization |
| US7255747B2 (en) | 2004-12-22 | 2007-08-14 | Sokudo Co., Ltd. | Coat/develop module with independent stations |
| JP4560681B2 (ja) | 2004-12-24 | 2010-10-13 | ミネベア株式会社 | 多灯式放電灯点灯装置 |
| JP2006186271A (ja) | 2004-12-28 | 2006-07-13 | Sharp Corp | 気相成長装置および成膜済基板の製造方法 |
| WO2006070602A1 (ja) | 2004-12-28 | 2006-07-06 | Bridgestone Corporation | 導電性エンドレスベルト、その製造方法およびそれを用いた画像形成装置 |
| DE102004063036A1 (de) | 2004-12-28 | 2006-07-06 | Advanced Micro Devices, Inc., Sunnyvale | Verfahren zum Ausbilden von Kontaktflecken |
| US20060137608A1 (en) | 2004-12-28 | 2006-06-29 | Choi Seung W | Atomic layer deposition apparatus |
| US20090104594A1 (en) | 2004-12-29 | 2009-04-23 | Biogen Idec | Bioreactor Process Control System and Method |
| US20060144820A1 (en) | 2004-12-30 | 2006-07-06 | Sawin Herbert H | Remote chamber methods for removing surface deposits |
| US7846499B2 (en) | 2004-12-30 | 2010-12-07 | Asm International N.V. | Method of pulsing vapor precursors in an ALD reactor |
| KR20070107017A (ko) | 2004-12-30 | 2007-11-06 | 어플라이드 머티어리얼스, 인코포레이티드 | 트리밍과 호환되는 라인 에지 조도 감소 방법 |
| US7482247B1 (en) | 2004-12-30 | 2009-01-27 | Novellus Systems, Inc. | Conformal nanolaminate dielectric deposition and etch bag gap fill process |
| US7195985B2 (en) | 2005-01-04 | 2007-03-27 | Intel Corporation | CMOS transistor junction regions formed by a CVD etching and deposition sequence |
| US7560395B2 (en) | 2005-01-05 | 2009-07-14 | Micron Technology, Inc. | Atomic layer deposited hafnium tantalum oxide dielectrics |
| JP2006188729A (ja) | 2005-01-05 | 2006-07-20 | Hitachi Kokusai Electric Inc | 基板処理装置 |
| US7598516B2 (en) | 2005-01-07 | 2009-10-06 | International Business Machines Corporation | Self-aligned process for nanotube/nanowire FETs |
| US7169668B2 (en) | 2005-01-09 | 2007-01-30 | United Microelectronics Corp. | Method of manufacturing a split-gate flash memory device |
| CN101495668A (zh) | 2005-01-18 | 2009-07-29 | Asm美国公司 | 晶片支撑销组件 |
| US8211230B2 (en) | 2005-01-18 | 2012-07-03 | Asm America, Inc. | Reaction system for growing a thin film |
| US20060156980A1 (en) | 2005-01-19 | 2006-07-20 | Samsung Electronics Co., Ltd. | Apparatus including 4-way valve for fabricating semiconductor device, method of controlling valve, and method of fabricating semiconductor device using the apparatus |
| US7964380B2 (en) | 2005-01-21 | 2011-06-21 | Argylia Technologies | Nanoparticles for manipulation of biopolymers and methods of thereof |
| KR100725037B1 (ko) | 2005-01-21 | 2007-06-07 | 세메스 주식회사 | 반도체 플라즈마 처리 장치 및 방법 |
| US20060162661A1 (en) | 2005-01-22 | 2006-07-27 | Applied Materials, Inc. | Mixing energized and non-energized gases for silicon nitride deposition |
| JP2006203120A (ja) | 2005-01-24 | 2006-08-03 | Toshiba Corp | 半導体装置の製造方法 |
| KR100640550B1 (ko) | 2005-01-26 | 2006-10-31 | 주식회사 아이피에스 | 플라즈마 ａｌｄ 박막증착방법 |
| US20060240187A1 (en) | 2005-01-27 | 2006-10-26 | Applied Materials, Inc. | Deposition of an intermediate catalytic layer on a barrier layer for copper metallization |
| US7438949B2 (en) | 2005-01-27 | 2008-10-21 | Applied Materials, Inc. | Ruthenium containing layer deposition method |
| US20060162658A1 (en) | 2005-01-27 | 2006-07-27 | Applied Materials, Inc. | Ruthenium layer deposition apparatus and method |
| JP5045432B2 (ja) | 2005-01-31 | 2012-10-10 | 宇部興産株式会社 | 赤色蛍光体の製造方法および赤色蛍光体 |
| US7235492B2 (en) | 2005-01-31 | 2007-06-26 | Applied Materials, Inc. | Low temperature etchant for treatment of silicon-containing surfaces |
| US7298009B2 (en) | 2005-02-01 | 2007-11-20 | Infineon Technologies Ag | Semiconductor method and device with mixed orientation substrate |
| US7135402B2 (en) | 2005-02-01 | 2006-11-14 | Taiwan Semiconductor Manufacturing Company, Ltd. | Sealing pores of low-k dielectrics using CxHy |
| US7816236B2 (en) | 2005-02-04 | 2010-10-19 | Asm America Inc. | Selective deposition of silicon-containing films |
| KR100585178B1 (ko) | 2005-02-05 | 2006-05-30 | 삼성전자주식회사 | 금속 게이트 전극을 가지는 ＦｉｎＦＥＴ을 포함하는반도체 소자 및 그 제조방법 |
| US20060176928A1 (en) | 2005-02-08 | 2006-08-10 | Tokyo Electron Limited | Substrate processing apparatus, control method adopted in substrate processing apparatus and program |
| US20060182885A1 (en) | 2005-02-14 | 2006-08-17 | Xinjian Lei | Preparation of metal silicon nitride films via cyclic deposition |
| US20070292974A1 (en) | 2005-02-17 | 2007-12-20 | Hitachi Kokusai Electric Inc | Substrate Processing Method and Substrate Processing Apparatus |
| KR100841866B1 (ko) | 2005-02-17 | 2008-06-27 | 가부시키가이샤 히다치 고쿠사이 덴키 | 반도체 디바이스의 제조 방법 및 기판 처리 장치 |
| WO2006091510A1 (en) | 2005-02-22 | 2006-08-31 | Asm America, Inc. | Plasma pre-treating surfaces for atomic layer deposition |
| US20060185589A1 (en) | 2005-02-23 | 2006-08-24 | Raanan Zehavi | Silicon gas injector and method of making |
| US7410340B2 (en) | 2005-02-24 | 2008-08-12 | Asyst Technologies, Inc. | Direct tool loading |
| KR100667598B1 (ko) | 2005-02-25 | 2007-01-12 | 주식회사 아이피에스 | 반도체 처리 장치 |
| JP4764028B2 (ja) | 2005-02-28 | 2011-08-31 | 株式会社日立ハイテクノロジーズ | プラズマ処理方法 |
| KR100854995B1 (ko) | 2005-03-02 | 2008-08-28 | 삼성전자주식회사 | 고밀도 플라즈마 화학 기상 증착 장치 |
| US8211235B2 (en) | 2005-03-04 | 2012-07-03 | Picosun Oy | Apparatuses and methods for deposition of material on surfaces |
| US7629267B2 (en) | 2005-03-07 | 2009-12-08 | Asm International N.V. | High stress nitride film and method for formation thereof |
| US6972478B1 (en) | 2005-03-07 | 2005-12-06 | Advanced Micro Devices, Inc. | Integrated circuit and method for its manufacture |
| JP4258518B2 (ja) | 2005-03-09 | 2009-04-30 | 東京エレクトロン株式会社 | 成膜方法、成膜装置及び記憶媒体 |
| JP4214124B2 (ja) | 2005-03-14 | 2009-01-28 | 株式会社バイオエコーネット | 耳式体温計 |
| US7666773B2 (en) | 2005-03-15 | 2010-02-23 | Asm International N.V. | Selective deposition of noble metal thin films |
| US7608549B2 (en) | 2005-03-15 | 2009-10-27 | Asm America, Inc. | Method of forming non-conformal layers |
| US7211525B1 (en) | 2005-03-16 | 2007-05-01 | Novellus Systems, Inc. | Hydrogen treatment enhanced gap fill |
| US7376520B2 (en) | 2005-03-16 | 2008-05-20 | Lam Research Corporation | System and method for gas flow verification |
| JP2006261434A (ja) | 2005-03-17 | 2006-09-28 | L'air Liquide Sa Pour L'etude & L'exploitation Des Procede S Georges Claude | シリコン酸化膜の形成方法 |
| US8974868B2 (en) | 2005-03-21 | 2015-03-10 | Tokyo Electron Limited | Post deposition plasma cleaning system and method |
| US7314835B2 (en) | 2005-03-21 | 2008-01-01 | Tokyo Electron Limited | Plasma enhanced atomic layer deposition system and method |
| US8486845B2 (en) | 2005-03-21 | 2013-07-16 | Tokyo Electron Limited | Plasma enhanced atomic layer deposition system and method |
| US20060211259A1 (en) | 2005-03-21 | 2006-09-21 | Maes Jan W | Silicon oxide cap over high dielectric constant films |
| KR100669828B1 (ko) | 2005-03-22 | 2007-01-16 | 성균관대학교산학협력단 | 중성빔을 이용한 원자층 증착장치 및 이 장치를 이용한원자층 증착방법 |
| KR100655431B1 (ko) | 2005-03-23 | 2006-12-11 | 삼성전자주식회사 | 웨이퍼와의 접촉 면적을 최소화할 수 있는 웨이퍼 캐리어 및 이를 이용한 웨이퍼 세정방법 |
| US7422636B2 (en) | 2005-03-25 | 2008-09-09 | Tokyo Electron Limited | Plasma enhanced atomic layer deposition system having reduced contamination |
| JP2006278058A (ja) | 2005-03-28 | 2006-10-12 | Matsushita Electric Works Ltd | プラズマ処理装置 |
| US20060213437A1 (en) | 2005-03-28 | 2006-09-28 | Tokyo Electron Limited | Plasma enhanced atomic layer deposition system |
| US20060226117A1 (en) | 2005-03-29 | 2006-10-12 | Bertram Ronald T | Phase change based heating element system and method |
| US7282415B2 (en) | 2005-03-29 | 2007-10-16 | Freescale Semiconductor, Inc. | Method for making a semiconductor device with strain enhancement |
| WO2006104018A1 (ja) | 2005-03-29 | 2006-10-05 | Hitachi Kokusai Electric Inc. | 基板処理装置及び基板処理システム |
| US7687409B2 (en) | 2005-03-29 | 2010-03-30 | Micron Technology, Inc. | Atomic layer deposited titanium silicon oxide films |
| USD559993S1 (en) | 2005-03-30 | 2008-01-15 | Tokyo Electron Limited | Cover ring |
| TWD121115S1 (zh) | 2005-03-30 | 2008-01-21 | 東京威力科創股份有限公司 | 遮護環 |
| US20060228898A1 (en) | 2005-03-30 | 2006-10-12 | Cory Wajda | Method and system for forming a high-k dielectric layer |
| US7993489B2 (en) | 2005-03-31 | 2011-08-09 | Tokyo Electron Limited | Capacitive coupling plasma processing apparatus and method for using the same |
| US8298336B2 (en) | 2005-04-01 | 2012-10-30 | Lam Research Corporation | High strip rate downstream chamber |
| EP1866963A4 (en) | 2005-04-07 | 2009-07-08 | Aviza Tech Inc | MULTILAYER MULTICOMPONENT FILMS WITH HIGH DIELECTRICITY CONSTANT AND METHOD FOR THEIR DEPOSITION |
| US7479198B2 (en) | 2005-04-07 | 2009-01-20 | Timothy D'Annunzio | Methods for forming nanofiber adhesive structures |
| US20090017733A1 (en) | 2005-04-19 | 2009-01-15 | Ebara Corporation | Substrate processing apparatus |
| KR100640640B1 (ko) | 2005-04-19 | 2006-10-31 | 삼성전자주식회사 | 미세 피치의 하드마스크를 이용한 반도체 소자의 미세 패턴형성 방법 |
| JP4694878B2 (ja) | 2005-04-20 | 2011-06-08 | Ｏｋｉセミコンダクタ株式会社 | 半導体製造装置および半導体装置の製造方法 |
| WO2006115476A2 (en) | 2005-04-21 | 2006-11-02 | Honeywell International Inc. | Ruthenium-based materials and ruthenium alloys |
| US7160819B2 (en) | 2005-04-25 | 2007-01-09 | Sharp Laboratories Of America, Inc. | Method to perform selective atomic layer deposition of zinc oxide |
| WO2006114781A2 (en) | 2005-04-26 | 2006-11-02 | University College Cork - National University Of Ireland, Cork | Deposition of materials |
| US8137465B1 (en) | 2005-04-26 | 2012-03-20 | Novellus Systems, Inc. | Single-chamber sequential curing of semiconductor wafers |
| US7544398B1 (en) | 2005-04-26 | 2009-06-09 | The Regents Of The Univesity Of California | Controlled nano-doping of ultra thin films |
| US7351057B2 (en) | 2005-04-27 | 2008-04-01 | Asm International N.V. | Door plate for furnace |
| US7425350B2 (en) | 2005-04-29 | 2008-09-16 | Asm Japan K.K. | Apparatus, precursors and deposition methods for silicon-containing materials |
| US7169018B2 (en) | 2005-05-04 | 2007-01-30 | Micrel, Incorporated | Wafer carrier checker and method of using same |
| US7084060B1 (en) | 2005-05-04 | 2006-08-01 | International Business Machines Corporation | Forming capping layer over metal wire structure using selective atomic layer deposition |
| US7915173B2 (en) | 2005-05-05 | 2011-03-29 | Macronix International Co., Ltd. | Shallow trench isolation structure having reduced dislocation density |
| US7214630B1 (en) | 2005-05-06 | 2007-05-08 | Novellus Systems, Inc. | PMOS transistor with compressive dielectric capping layer |
| US20060251827A1 (en) | 2005-05-09 | 2006-11-09 | Applied Materials, Inc. | Tandem uv chamber for curing dielectric materials |
| US20060249175A1 (en) | 2005-05-09 | 2006-11-09 | Applied Materials, Inc. | High efficiency UV curing system |
| KR100688836B1 (ko) | 2005-05-11 | 2007-03-02 | 삼성에스디아이 주식회사 | 촉매 화학기상증착장치 |
| JP4666473B2 (ja) | 2005-05-12 | 2011-04-06 | 大日本スクリーン製造株式会社 | 基板熱処理装置 |
| JP2006319261A (ja) | 2005-05-16 | 2006-11-24 | Dainippon Screen Mfg Co Ltd | 基板処理装置 |
| US7875556B2 (en) | 2005-05-16 | 2011-01-25 | Air Products And Chemicals, Inc. | Precursors for CVD silicon carbo-nitride and silicon nitride films |
| US7312162B2 (en) | 2005-05-17 | 2007-12-25 | Applied Materials, Inc. | Low temperature plasma deposition process for carbon layer deposition |
| US7422775B2 (en) | 2005-05-17 | 2008-09-09 | Applied Materials, Inc. | Process for low temperature plasma deposition of an optical absorption layer and high speed optical annealing |
| US7101763B1 (en) | 2005-05-17 | 2006-09-05 | International Business Machines Corporation | Low capacitance junction-isolation for bulk FinFET technology |
| US20060260545A1 (en) | 2005-05-17 | 2006-11-23 | Kartik Ramaswamy | Low temperature absorption layer deposition and high speed optical annealing system |
| US7109098B1 (en) | 2005-05-17 | 2006-09-19 | Applied Materials, Inc. | Semiconductor junction formation process including low temperature plasma deposition of an optical absorption layer and high speed optical annealing |
| KR100731164B1 (ko) | 2005-05-19 | 2007-06-20 | 주식회사 피에조닉스 | 샤워헤드를 구비한 화학기상 증착 방법 및 장치 |
| JP2006324551A (ja) | 2005-05-20 | 2006-11-30 | Shibaura Mechatronics Corp | プラズマ発生装置及びプラズマ処理装置 |
| US20070155138A1 (en) | 2005-05-24 | 2007-07-05 | Pierre Tomasini | Apparatus and method for depositing silicon germanium films |
| US7732342B2 (en) | 2005-05-26 | 2010-06-08 | Applied Materials, Inc. | Method to increase the compressive stress of PECVD silicon nitride films |
| US8129290B2 (en) | 2005-05-26 | 2012-03-06 | Applied Materials, Inc. | Method to increase tensile stress of silicon nitride films using a post PECVD deposition UV cure |
| US8138104B2 (en) | 2005-05-26 | 2012-03-20 | Applied Materials, Inc. | Method to increase silicon nitride tensile stress using nitrogen plasma in-situ treatment and ex-situ UV cure |
| US20060269690A1 (en) | 2005-05-27 | 2006-11-30 | Asm Japan K.K. | Formation technology for nanoparticle films having low dielectric constant |
| JPWO2006129643A1 (ja) | 2005-05-31 | 2009-01-08 | 東京エレクトロン株式会社 | プラズマ処理装置およびプラズマ処理方法 |
| US7608490B2 (en) | 2005-06-02 | 2009-10-27 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
| US20060275933A1 (en) | 2005-06-02 | 2006-12-07 | Applied Materials, Inc. | Thermally conductive ceramic tipped contact thermocouple |
| KR100750968B1 (ko) | 2005-06-07 | 2007-08-22 | 주식회사 알지비하이텍 | 플라즈마화학적기상증착 기구 내의 서셉터 구조 |
| US20060281310A1 (en) | 2005-06-08 | 2006-12-14 | Applied Materials, Inc. | Rotating substrate support and methods of use |
| EP1889287A1 (en) | 2005-06-09 | 2008-02-20 | Axcelis Technologies, Inc. | Ultraviolet curing process for spin-on dielectric materials used in pre-metal and/or shallow trench isolation applications |
| JP4813480B2 (ja) | 2005-06-13 | 2011-11-09 | 株式会社日立国際電気 | 半導体装置の製造方法、基板処理方法及び基板処理装置 |
| US20060278524A1 (en) | 2005-06-14 | 2006-12-14 | Stowell Michael W | System and method for modulating power signals to control sputtering |
| JP4853857B2 (ja) | 2005-06-15 | 2012-01-11 | 東京エレクトロン株式会社 | 基板の処理方法，コンピュータ読み取り可能な記録媒体及び基板処理装置 |
| JP4753173B2 (ja) | 2005-06-17 | 2011-08-24 | 株式会社フジキン | 流体制御装置 |
| US7473655B2 (en) | 2005-06-17 | 2009-01-06 | Applied Materials, Inc. | Method for silicon based dielectric chemical vapor deposition |
| JP4728708B2 (ja) | 2005-06-17 | 2011-07-20 | 日本電気株式会社 | 配線基板及びその製造方法 |
| US20060286819A1 (en) | 2005-06-21 | 2006-12-21 | Applied Materials, Inc. | Method for silicon based dielectric deposition and clean with photoexcitation |
| US20060286774A1 (en) | 2005-06-21 | 2006-12-21 | Applied Materials. Inc. | Method for forming silicon-containing materials during a photoexcitation deposition process |
| US7601652B2 (en) | 2005-06-21 | 2009-10-13 | Applied Materials, Inc. | Method for treating substrates and films with photoexcitation |
| US7648927B2 (en) | 2005-06-21 | 2010-01-19 | Applied Materials, Inc. | Method for forming silicon-containing materials during a photoexcitation deposition process |
| US7651955B2 (en) | 2005-06-21 | 2010-01-26 | Applied Materials, Inc. | Method for forming silicon-containing materials during a photoexcitation deposition process |
| CN101010448B (zh) | 2005-06-23 | 2010-09-29 | 东京毅力科创株式会社 | 半导体处理装置用的构成部件及其制造方法 |
| JP2007005582A (ja) | 2005-06-24 | 2007-01-11 | Asm Japan Kk | 基板搬送装置及びそれを搭載した半導体基板製造装置 |
| US20060292310A1 (en) | 2005-06-27 | 2006-12-28 | Applied Materials, Inc. | Process kit design to reduce particle generation |
| US7575990B2 (en) | 2005-07-01 | 2009-08-18 | Macronix International Co., Ltd. | Method of forming self-aligned contacts and local interconnects |
| KR20130007667A (ko) | 2005-07-07 | 2013-01-18 | 엠케이에스 인스트루먼츠, 인코포레이티드 | 멀티 챔버 툴을 위한 오존 시스템 |
| WO2007008653A2 (en) | 2005-07-08 | 2007-01-18 | Aviza Technology, Inc. | Method for depositing silicon-containing films |
| US20070010072A1 (en) | 2005-07-09 | 2007-01-11 | Aviza Technology, Inc. | Uniform batch film deposition process and films so produced |
| CN101222983B (zh) | 2005-07-09 | 2012-09-05 | 康邦权 | 用于在常压等离子体中疏水和超疏水处理的表面涂覆方法 |
| US7579285B2 (en) | 2005-07-11 | 2009-08-25 | Imec | Atomic layer deposition method for depositing a layer |
| US7762755B2 (en) | 2005-07-11 | 2010-07-27 | Brooks Automation, Inc. | Equipment storage for substrate processing apparatus |
| US7925378B2 (en) | 2005-07-11 | 2011-04-12 | Brooks Automation, Inc. | Process apparatus with on-the-fly workpiece centering |
| TW200702647A (en) | 2005-07-13 | 2007-01-16 | Actherm Inc | Heat conductive structure of electronic clinical thermometer and clinical thermometer with the same |
| US20070014919A1 (en) | 2005-07-15 | 2007-01-18 | Jani Hamalainen | Atomic layer deposition of noble metal oxides |
| US7271044B2 (en) | 2005-07-21 | 2007-09-18 | International Business Machines Corporation | CMOS (complementary metal oxide semiconductor) technology |
| US7314838B2 (en) | 2005-07-21 | 2008-01-01 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method for forming a high density dielectric film by chemical vapor deposition |
| JP2007035747A (ja) | 2005-07-25 | 2007-02-08 | Sumitomo Electric Ind Ltd | ウェハ保持体およびそれを搭載したウェハプローバ |
| CN101142012B (zh) | 2005-07-26 | 2011-08-24 | 川崎重工业株式会社 | 混合流体的均匀化装置以及混合流体供给设备 |
| JP2007035899A (ja) | 2005-07-27 | 2007-02-08 | Sumitomo Electric Ind Ltd | ウエハプローバ用ウエハ保持体及びそれを搭載したウエハプローバ |
| TWI313486B (en) | 2005-07-28 | 2009-08-11 | Nuflare Technology Inc | Position measurement apparatus and method and writing apparatus and method |
| TWD117941S1 (zh) | 2005-07-29 | 2007-07-01 | 東京威力科創股份有限公司 | 電漿處理裝置之微波導入窗用頂板 |
| TWI261313B (en) | 2005-07-29 | 2006-09-01 | Ind Tech Res Inst | A method for a large dimension plasma enhanced atomic layer deposition cavity and an apparatus thereof |
| TWD125339S1 (zh) | 2005-07-29 | 2008-10-11 | 東京威力科創股份有限公司 | 電漿處理裝置之微波導入窗用頂板 |
| TWI327339B (en) | 2005-07-29 | 2010-07-11 | Nuflare Technology Inc | Vapor phase growing apparatus and vapor phase growing method |
| TWD117939S1 (zh) | 2005-07-29 | 2007-07-01 | 東京威力科創股份有限公司 | 電漿處理裝置之微波導入窗用頂板 |
| US20090047447A1 (en) | 2005-08-02 | 2009-02-19 | Sawin Herbert H | Method for removing surface deposits and passivating interior surfaces of the interior of a chemical vapor deposition reactor |
| US20070028842A1 (en) | 2005-08-02 | 2007-02-08 | Makoto Inagawa | Vacuum chamber bottom |
| US20090045829A1 (en) | 2005-08-04 | 2009-02-19 | Sumitomo Electric Industries, Ltd. | Wafer holder for wafer prober and wafer prober equipped with same |
| CN101238095B (zh) | 2005-08-04 | 2011-08-10 | 东曹株式会社 | 含有金属的化合物,其制备方法、含有金属的薄膜和其形成方法 |
| WO2007018157A1 (ja) | 2005-08-05 | 2007-02-15 | Tokyo Electron Limited | 基板処理装置およびそれに用いる基板載置台 |
| WO2007018016A1 (ja) | 2005-08-05 | 2007-02-15 | Hitachi Kokusai Electric Inc. | 基板処理装置、冷却ガス供給ノズルおよび半導体装置の製造方法 |
| US20070037412A1 (en) | 2005-08-05 | 2007-02-15 | Tokyo Electron Limited | In-situ atomic layer deposition |
| US7335611B2 (en) | 2005-08-08 | 2008-02-26 | Applied Materials, Inc. | Copper conductor annealing process employing high speed optical annealing with a low temperature-deposited optical absorber layer |
| US7323401B2 (en) | 2005-08-08 | 2008-01-29 | Applied Materials, Inc. | Semiconductor substrate process using a low temperature deposited carbon-containing hard mask |
| US7429532B2 (en) | 2005-08-08 | 2008-09-30 | Applied Materials, Inc. | Semiconductor substrate process using an optically writable carbon-containing mask |
| US7312148B2 (en) | 2005-08-08 | 2007-12-25 | Applied Materials, Inc. | Copper barrier reflow process employing high speed optical annealing |
| US7229873B2 (en) | 2005-08-10 | 2007-06-12 | Texas Instruments Incorporated | Process for manufacturing dual work function metal gates in a microelectronics device |
| JP4666215B2 (ja) | 2005-08-10 | 2011-04-06 | 株式会社ダイフク | 物品搬送装置 |
| US8709162B2 (en) | 2005-08-16 | 2014-04-29 | Applied Materials, Inc. | Active cooling substrate support |
| WO2007020874A1 (ja) | 2005-08-16 | 2007-02-22 | Hitachi Kokusai Electric Inc. | 薄膜形成方法および半導体デバイスの製造方法 |
| US7718225B2 (en) | 2005-08-17 | 2010-05-18 | Applied Materials, Inc. | Method to control semiconductor film deposition characteristics |
| JP4628900B2 (ja) | 2005-08-24 | 2011-02-09 | 株式会社日立ハイテクノロジーズ | プラズマ処理装置 |
| KR100689037B1 (ko) | 2005-08-24 | 2007-03-08 | 삼성전자주식회사 | 마이크로파 공명 플라즈마 발생장치 및 그것을 구비하는플라즈마 처리 시스템 |
| JP5184357B2 (ja) | 2005-08-24 | 2013-04-17 | エレクトロニクス アンド テレコミュニケーションズ リサーチ インスチチュート | バナジウム酸化物薄膜の製造方法 |
| USD556704S1 (en) | 2005-08-25 | 2007-12-04 | Hitachi High-Technologies Corporation | Grounded electrode for a plasma processing apparatus |
| US8123968B2 (en) | 2005-08-25 | 2012-02-28 | Round Rock Research, Llc | Multiple deposition for integration of spacers in pitch multiplication process |
| USD557226S1 (en) | 2005-08-25 | 2007-12-11 | Hitachi High-Technologies Corporation | Electrode cover for a plasma processing apparatus |
| US7402534B2 (en) | 2005-08-26 | 2008-07-22 | Applied Materials, Inc. | Pretreatment processes within a batch ALD reactor |
| US7393736B2 (en) | 2005-08-29 | 2008-07-01 | Micron Technology, Inc. | Atomic layer deposition of Zrx Hfy Sn1-x-y O2 films as high k gate dielectrics |
| US8110469B2 (en) | 2005-08-30 | 2012-02-07 | Micron Technology, Inc. | Graded dielectric layers |
| US20070047384A1 (en) | 2005-09-01 | 2007-03-01 | Mclaughlin Jon K | Control system for and method of combining materials |
| JP4815600B2 (ja) | 2005-09-06 | 2011-11-16 | 株式会社テラセミコン | 多結晶シリコン薄膜製造方法及びその製造装置 |
| CN101578141A (zh) | 2005-09-08 | 2009-11-11 | 应用材料股份有限公司 | 大面积电子设备的图案化化学电镀金属化制程 |
| US8052794B2 (en) | 2005-09-12 | 2011-11-08 | The United States Of America As Represented By The Secretary Of The Navy | Directed reagents to improve material uniformity |
| US20070056850A1 (en) | 2005-09-13 | 2007-03-15 | Applied Materials, Inc. | Large-area magnetron sputtering chamber with individually controlled sputtering zones |
| US20070056843A1 (en) | 2005-09-13 | 2007-03-15 | Applied Materials, Inc. | Method of processing a substrate using a large-area magnetron sputtering chamber with individually controlled sputtering zones |
| US20070065597A1 (en) | 2005-09-15 | 2007-03-22 | Asm Japan K.K. | Plasma CVD film formation apparatus provided with mask |
| US20070065578A1 (en) | 2005-09-21 | 2007-03-22 | Applied Materials, Inc. | Treatment processes for a batch ALD reactor |
| US20070066084A1 (en) | 2005-09-21 | 2007-03-22 | Cory Wajda | Method and system for forming a layer with controllable spstial variation |
| JP2007088113A (ja) | 2005-09-21 | 2007-04-05 | Sony Corp | 半導体装置の製造方法 |
| JP5017950B2 (ja) | 2005-09-21 | 2012-09-05 | 株式会社Ｓｕｍｃｏ | エピタキシャル成長装置の温度管理方法 |
| US7578616B2 (en) | 2005-09-22 | 2009-08-25 | Lam Research Corporation | Apparatus for determining a temperature of a substrate and methods therefor |
| US7976641B1 (en) | 2005-09-30 | 2011-07-12 | Lam Research Corporation | Extending storage time of removed plasma chamber components prior to cleaning thereof |
| US7691204B2 (en) | 2005-09-30 | 2010-04-06 | Applied Materials, Inc. | Film formation apparatus and methods including temperature and emissivity/pattern compensation |
| WO2007041164A2 (en) | 2005-09-30 | 2007-04-12 | Bognar John A | Measuring nitrogen oxides and other gases by ozone formation |
| US8372203B2 (en) | 2005-09-30 | 2013-02-12 | Applied Materials, Inc. | Apparatus temperature control and pattern compensation |
| USD541125S1 (en) | 2005-10-05 | 2007-04-24 | Powers Products Iii, Llc | Fastener slide |
| US7785658B2 (en) | 2005-10-07 | 2010-08-31 | Asm Japan K.K. | Method for forming metal wiring structure |
| US7754906B2 (en) | 2005-10-07 | 2010-07-13 | Air Products And Chemicals, Inc. | Ti, Ta, Hf, Zr and related metal silicon amides for ALD/CVD of metal-silicon nitrides, oxides or oxynitrides |
| US7955436B2 (en) | 2006-02-24 | 2011-06-07 | Intermolecular, Inc. | Systems and methods for sealing in site-isolated reactors |
| WO2007043528A1 (ja) | 2005-10-12 | 2007-04-19 | Matsushita Electric Industrial Co., Ltd. | プラズマ処理装置、プラズマ処理方法、及びトレイ |
| CN101283442A (zh) | 2005-10-14 | 2008-10-08 | 盐谷喜美 | 半导体装置以及制造方法 |
| US8149346B2 (en) | 2005-10-14 | 2012-04-03 | Semiconductor Energy Laboratory Co., Ltd. | Display device and manufacturing method thereof |
| US7244658B2 (en) | 2005-10-17 | 2007-07-17 | Applied Materials, Inc. | Low stress STI films and methods |
| US7294581B2 (en) | 2005-10-17 | 2007-11-13 | Applied Materials, Inc. | Method for fabricating silicon nitride spacer structures |
| KR100725108B1 (ko) | 2005-10-18 | 2007-06-04 | 삼성전자주식회사 | 가스 공급 장치 및 이를 갖는 기판 가공 장치 |
| US7691205B2 (en) | 2005-10-18 | 2010-04-06 | Asm Japan K.K. | Substrate-supporting device |
| WO2007045515A1 (en) | 2005-10-20 | 2007-04-26 | Agfa Graphics Nv | Negative working, heat-sensitive lithographic printing plate precursor |
| US7727828B2 (en) | 2005-10-20 | 2010-06-01 | Applied Materials, Inc. | Method for fabricating a gate dielectric of a field effect transistor |
| US7968205B2 (en) | 2005-10-21 | 2011-06-28 | Shin-Etsu Chemical Co., Ltd. | Corrosion resistant multilayer member |
| JP2007115973A (ja) | 2005-10-21 | 2007-05-10 | Shin Etsu Chem Co Ltd | 耐食性部材 |
| US7994721B2 (en) | 2005-10-27 | 2011-08-09 | Luxim Corporation | Plasma lamp and methods using a waveguide body and protruding bulb |
| US7638951B2 (en) | 2005-10-27 | 2009-12-29 | Luxim Corporation | Plasma lamp with stable feedback amplification and method therefor |
| US8993055B2 (en) | 2005-10-27 | 2015-03-31 | Asm International N.V. | Enhanced thin film deposition |
| US7906910B2 (en) | 2005-10-27 | 2011-03-15 | Luxim Corporation | Plasma lamp with conductive material positioned relative to RF feed |
| JP5044931B2 (ja) | 2005-10-31 | 2012-10-10 | 東京エレクトロン株式会社 | ガス供給装置及び基板処理装置 |
| DE102005051994B4 (de) | 2005-10-31 | 2011-12-01 | Globalfoundries Inc. | Verformungsverfahrenstechnik in Transistoren auf Siliziumbasis unter Anwendung eingebetteter Halbleiterschichten mit Atomen mit einem großen kovalenten Radius |
| US20070095283A1 (en) | 2005-10-31 | 2007-05-03 | Galewski Carl J | Pumping System for Atomic Layer Deposition |
| US9127362B2 (en) | 2005-10-31 | 2015-09-08 | Applied Materials, Inc. | Process kit and target for substrate processing chamber |
| US7399712B1 (en) | 2005-10-31 | 2008-07-15 | Novellus Systems, Inc. | Method for etching organic hardmasks |
| KR101036734B1 (ko) | 2005-10-31 | 2011-05-24 | 어플라이드 머티어리얼스, 인코포레이티드 | 공정 저감 반응로 |
| TWI332532B (en) | 2005-11-04 | 2010-11-01 | Applied Materials Inc | Apparatus and process for plasma-enhanced atomic layer deposition |
| US7695808B2 (en) | 2005-11-07 | 2010-04-13 | 3M Innovative Properties Company | Thermal transfer coating |
| US7622378B2 (en) | 2005-11-09 | 2009-11-24 | Tokyo Electron Limited | Multi-step system and method for curing a dielectric film |
| US7561982B2 (en) | 2005-11-10 | 2009-07-14 | Shake Awake Products, LLC | Physical attribute recording method and system |
| US20090087967A1 (en) | 2005-11-14 | 2009-04-02 | Todd Michael A | Precursors and processes for low temperature selective epitaxial growth |
| JP4940635B2 (ja) | 2005-11-14 | 2012-05-30 | 東京エレクトロン株式会社 | 加熱装置、熱処理装置及び記憶媒体 |
| US7589028B1 (en) | 2005-11-15 | 2009-09-15 | Novellus Systems, Inc. | Hydroxyl bond removal and film densification method for oxide films using microwave post treatment |
| JP4975414B2 (ja) | 2005-11-16 | 2012-07-11 | エーエスエム インターナショナル エヌ．ヴェー． | Ｃｖｄ又はａｌｄによる膜の堆積のための方法 |
| KR100660890B1 (ko) | 2005-11-16 | 2006-12-26 | 삼성전자주식회사 | Ａｌｄ를 이용한 이산화실리콘막 형성 방법 |
| GB2432363B (en) | 2005-11-16 | 2010-06-23 | Epichem Ltd | Hafnocene and zirconocene precursors, and use thereof in atomic layer deposition |
| US7897217B2 (en) | 2005-11-18 | 2011-03-01 | Tokyo Electron Limited | Method and system for performing plasma enhanced atomic layer deposition |
| US20070116872A1 (en) | 2005-11-18 | 2007-05-24 | Tokyo Electron Limited | Apparatus for thermal and plasma enhanced vapor deposition and method of operating |
| US20070116888A1 (en) | 2005-11-18 | 2007-05-24 | Tokyo Electron Limited | Method and system for performing different deposition processes within a single chamber |
| KR100975268B1 (ko) | 2005-11-18 | 2010-08-11 | 가부시키가이샤 히다치 고쿠사이 덴키 | 반도체 장치의 제조 방법 및 기판 처리 장치 |
| US20070116873A1 (en) | 2005-11-18 | 2007-05-24 | Tokyo Electron Limited | Apparatus for thermal and plasma enhanced vapor deposition and method of operating |
| US8815014B2 (en) | 2005-11-18 | 2014-08-26 | Tokyo Electron Limited | Method and system for performing different deposition processes within a single chamber |
| JP2009529223A (ja) | 2005-11-22 | 2009-08-13 | ジーナス インコーポレーテッド | 小体積対称流れシングルウェハａｌｄ装置 |
| US7629277B2 (en) | 2005-11-23 | 2009-12-08 | Honeywell International Inc. | Frag shield |
| US8382909B2 (en) | 2005-11-23 | 2013-02-26 | Edwards Limited | Use of spectroscopic techniques to monitor and control reactant gas input into a pre-pump reactive gas injection system |
| US7912439B2 (en) | 2005-11-25 | 2011-03-22 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and operating method thereof |
| US8603580B2 (en) | 2005-11-28 | 2013-12-10 | Msp Corporation | High stability and high capacity precursor vapor generation for thin film deposition |
| JP5082229B2 (ja) | 2005-11-29 | 2012-11-28 | 東京エレクトロン株式会社 | プラズマ処理装置 |
| US20070125762A1 (en) | 2005-12-01 | 2007-06-07 | Applied Materials, Inc. | Multi-zone resistive heater |
| US7862683B2 (en) | 2005-12-02 | 2011-01-04 | Tokyo Electron Limited | Chamber dry cleaning |
| US7963917B2 (en) | 2005-12-05 | 2011-06-21 | Echo Therapeutics, Inc. | System and method for continuous non-invasive glucose monitoring |
| US7857506B2 (en) | 2005-12-05 | 2010-12-28 | Sencal Llc | Disposable, pre-calibrated, pre-validated sensors for use in bio-processing applications |
| US8003919B2 (en) | 2005-12-06 | 2011-08-23 | Dainippon Screen Mfg. Co., Ltd. | Substrate heat treatment apparatus |
| WO2007066472A1 (ja) | 2005-12-06 | 2007-06-14 | Ulvac, Inc. | ガスヘッド及び薄膜製造装置 |
| JP4666496B2 (ja) | 2005-12-07 | 2011-04-06 | 大日本スクリーン製造株式会社 | 基板熱処理装置 |
| US7592251B2 (en) | 2005-12-08 | 2009-09-22 | Micron Technology, Inc. | Hafnium tantalum titanium oxide films |
| JP4803578B2 (ja) | 2005-12-08 | 2011-10-26 | 東京エレクトロン株式会社 | 成膜方法 |
| US8454749B2 (en) | 2005-12-19 | 2013-06-04 | Tokyo Electron Limited | Method and system for sealing a first assembly to a second assembly of a processing system |
| US20070264427A1 (en) | 2005-12-21 | 2007-11-15 | Asm Japan K.K. | Thin film formation by atomic layer growth and chemical vapor deposition |
| EP1801855B1 (en) | 2005-12-22 | 2009-01-14 | Freiberger Compound Materials GmbH | Processes for selective masking of III-N layers and for the preparation of free-standing III-N layers or of devices |
| US7651571B2 (en) | 2005-12-22 | 2010-01-26 | Kyocera Corporation | Susceptor |
| US7713584B2 (en) | 2005-12-22 | 2010-05-11 | Asm International N.V. | Process for producing oxide films |
| US7381644B1 (en) | 2005-12-23 | 2008-06-03 | Novellus Systems, Inc. | Pulsed PECVD method for modulating hydrogen content in hard mask |
| JP4629574B2 (ja) | 2005-12-27 | 2011-02-09 | 日本発條株式会社 | 基板支持装置と、その製造方法 |
| KR101296911B1 (ko) | 2005-12-28 | 2013-08-14 | 엘지디스플레이 주식회사 | 평판표시소자의 제조장치 및 그의 정전기량 검출장치 및검출방법 |
| TWM292692U (en) | 2005-12-29 | 2006-06-21 | Powerchip Semiconductor Corp | Thermocouple apparatus |
| TWI284390B (en) | 2006-01-10 | 2007-07-21 | Ind Tech Res Inst | Manufacturing method of charge store device |
| US8088248B2 (en) | 2006-01-11 | 2012-01-03 | Lam Research Corporation | Gas switching section including valves having different flow coefficients for gas distribution system |
| CN101003895B (zh) | 2006-01-16 | 2011-10-19 | 中微半导体设备(上海)有限公司 | 一种传送反应物到基片的装置及其处理方法 |
| JP5324026B2 (ja) | 2006-01-18 | 2013-10-23 | 東京エレクトロン株式会社 | プラズマ処理装置およびプラズマ処理装置の制御方法 |
| JP5068458B2 (ja) | 2006-01-18 | 2012-11-07 | 東京エレクトロン株式会社 | プラズマ処理装置およびプラズマ処理方法 |
| JP2007191792A (ja) | 2006-01-19 | 2007-08-02 | Atto Co Ltd | ガス分離型シャワーヘッド |
| CN101370963B (zh) | 2006-01-19 | 2012-03-28 | Asm美国公司 | 高温原子层沉积进气歧管 |
| US20070173071A1 (en) | 2006-01-20 | 2007-07-26 | International Business Machines Corporation | SiCOH dielectric |
| US20080254220A1 (en) | 2006-01-20 | 2008-10-16 | Tokyo Electron Limited | Plasma processing apparatus |
| US8673413B2 (en) | 2006-01-27 | 2014-03-18 | Tosoh Finechem Corporation | Method for packing solid organometallic compound and packed container |
| JP4854317B2 (ja) | 2006-01-31 | 2012-01-18 | 東京エレクトロン株式会社 | 基板処理方法 |
| JP4911980B2 (ja) | 2006-02-02 | 2012-04-04 | 東京エレクトロン株式会社 | 減圧処理装置 |
| KR100785163B1 (ko) | 2006-02-03 | 2007-12-11 | 위순임 | 다중 원격 플라즈마 발생기를 구비하는 기판 처리 시스템 |
| US7736437B2 (en) | 2006-02-03 | 2010-06-15 | Integrated Materials, Incorporated | Baffled liner cover |
| WO2007091638A1 (ja) | 2006-02-09 | 2007-08-16 | Sumco Techxiv Corporation | サセプタおよびエピタキシャルウェハの製造装置 |
| US20070184179A1 (en) | 2006-02-09 | 2007-08-09 | Akshay Waghray | Methods and apparatus to monitor a process of depositing a constituent of a multi-constituent gas during production of a composite brake disc |
| US7695567B2 (en) | 2006-02-10 | 2010-04-13 | Applied Materials, Inc. | Water vapor passivation of a wall facing a plasma |
| US8057603B2 (en) | 2006-02-13 | 2011-11-15 | Tokyo Electron Limited | Method of cleaning substrate processing chamber, storage medium, and substrate processing chamber |
| JP2007211326A (ja) | 2006-02-13 | 2007-08-23 | Nec Electronics Corp | 成膜装置および成膜方法 |
| JP4783169B2 (ja) | 2006-02-13 | 2011-09-28 | パナソニック株式会社 | ドライエッチング方法、微細構造形成方法、モールド及びその製造方法 |
| US20070187363A1 (en) | 2006-02-13 | 2007-08-16 | Tokyo Electron Limited | Substrate processing apparatus and substrate processing method |
| KR101379015B1 (ko) | 2006-02-15 | 2014-03-28 | 한국에이에스엠지니텍 주식회사 | 플라즈마 원자층 증착법을 이용한 루테늄 막 증착 방법 및고밀도 루테늄 층 |
| KR101224377B1 (ko) | 2006-02-17 | 2013-01-21 | 삼성디스플레이 주식회사 | 실리콘층의 형성방법 및 이를 이용한 표시기판의 제조방법 |
| KR101186740B1 (ko) | 2006-02-17 | 2012-09-28 | 삼성전자주식회사 | 뱅크형성 방법 및 이에 의해 형성된 뱅크를 함유하는 유기박막 트랜지스터 |
| JP4497103B2 (ja) | 2006-02-21 | 2010-07-07 | 住友電気工業株式会社 | ウェハ保持体およびそれを搭載したヒータユニット、ウェハプローバ |
| KR20070084683A (ko) | 2006-02-21 | 2007-08-27 | 국민대학교산학협력단 | 분자층 증착법 |
| US20070207275A1 (en) | 2006-02-21 | 2007-09-06 | Applied Materials, Inc. | Enhancement of remote plasma source clean for dielectric films |
| JPWO2007097024A1 (ja) | 2006-02-27 | 2009-07-09 | 株式会社ユーテック | 気化器、半導体製造装置及び半導体製造方法 |
| US7354849B2 (en) | 2006-02-28 | 2008-04-08 | Intel Corporation | Catalytically enhanced atomic layer deposition process |
| US20070215278A1 (en) | 2006-03-06 | 2007-09-20 | Muneo Furuse | Plasma etching apparatus and method for forming inner wall of plasma processing chamber |
| KR101117749B1 (ko) | 2006-03-07 | 2012-03-16 | 씨케이디 가부시키 가이샤 | 가스유량 검정유닛 |
| KR101003446B1 (ko) | 2006-03-07 | 2010-12-28 | 가부시키가이샤 히다치 고쿠사이 덴키 | 기판 처리 장치 및 기판 처리 방법 |
| US7794546B2 (en) | 2006-03-08 | 2010-09-14 | Tokyo Electron Limited | Sealing device and method for a processing system |
| US7740705B2 (en) | 2006-03-08 | 2010-06-22 | Tokyo Electron Limited | Exhaust apparatus configured to reduce particle contamination in a deposition system |
| US7670432B2 (en) | 2006-03-08 | 2010-03-02 | Tokyo Electron Limited | Exhaust system for a vacuum processing system |
| US7460003B2 (en) | 2006-03-09 | 2008-12-02 | International Business Machines Corporation | Electronic fuse with conformal fuse element formed over a freestanding dielectric spacer |
| US7494882B2 (en) | 2006-03-10 | 2009-02-24 | Texas Instruments Incorporated | Manufacturing a semiconductive device using a controlled atomic layer removal process |
| KR20070093493A (ko) | 2006-03-14 | 2007-09-19 | 엘지이노텍 주식회사 | 서셉터 및 반도체 제조장치 |
| US8008596B2 (en) | 2006-03-16 | 2011-08-30 | Tokyo Electron Limited | Plasma processing apparatus and electrode used therein |
| US20070218200A1 (en) | 2006-03-16 | 2007-09-20 | Kenji Suzuki | Method and apparatus for reducing particle formation in a vapor distribution system |
| US8268078B2 (en) | 2006-03-16 | 2012-09-18 | Tokyo Electron Limited | Method and apparatus for reducing particle contamination in a deposition system |
| US7692171B2 (en) | 2006-03-17 | 2010-04-06 | Andrzei Kaszuba | Apparatus and method for exposing a substrate to UV radiation using asymmetric reflectors |
| US7566891B2 (en) | 2006-03-17 | 2009-07-28 | Applied Materials, Inc. | Apparatus and method for treating a substrate with UV radiation using primary and secondary reflectors |
| DE102006012367B4 (de) | 2006-03-17 | 2015-07-16 | Air Liquide Deutschland Gmbh | Verfahren zur Herstellung eines Hohlkörpers aus Kunststoff mit innenseitiger Sperrschicht |
| WO2007108401A1 (ja) | 2006-03-20 | 2007-09-27 | Hitachi Kokusai Electric Inc. | 半導体装置の製造方法および基板処理装置 |
| US7410915B2 (en) | 2006-03-23 | 2008-08-12 | Asm Japan K.K. | Method of forming carbon polymer film using plasma CVD |
| JP4781867B2 (ja) | 2006-03-23 | 2011-09-28 | 大日本スクリーン製造株式会社 | 熱処理装置 |
| US7598178B2 (en) | 2006-03-24 | 2009-10-06 | Applied Materials, Inc. | Carbon precursors for use during silicon epitaxial film formation |
| USD549815S1 (en) | 2006-03-27 | 2007-08-28 | Murphy Timothy M | Air flow directing fixture for heating, air conditioning and ventilation devices |
| US7910494B2 (en) | 2006-03-29 | 2011-03-22 | Tokyo Electron Limited | Thermal processing furnace, gas delivery system therefor, and methods for delivering a process gas thereto |
| US20070234955A1 (en) | 2006-03-29 | 2007-10-11 | Tokyo Electron Limited | Method and apparatus for reducing carbon monoxide poisoning at the peripheral edge of a substrate in a thin film deposition system |
| JP2007266464A (ja) | 2006-03-29 | 2007-10-11 | Hitachi Ltd | 半導体集積回路装置の製造方法 |
| US7456429B2 (en) | 2006-03-29 | 2008-11-25 | Eastman Kodak Company | Apparatus for atomic layer deposition |
| US7829463B2 (en) | 2006-03-30 | 2010-11-09 | Tokyo Electron Limited | Plasma processing method and plasma processing apparatus |
| US8951478B2 (en) | 2006-03-30 | 2015-02-10 | Applied Materials, Inc. | Ampoule with a thermally conductive coating |
| EP2006414A2 (en) | 2006-03-30 | 2008-12-24 | Mitsui Engineering & Shipbuilding Co., Ltd. | Atomic layer growing apparatus |
| JP4597894B2 (ja) | 2006-03-31 | 2010-12-15 | 東京エレクトロン株式会社 | 基板載置台および基板処理装置 |
| US8097300B2 (en) | 2006-03-31 | 2012-01-17 | Tokyo Electron Limited | Method of forming mixed rare earth oxynitride and aluminum oxynitride films by atomic layer deposition |
| US7645484B2 (en) | 2006-03-31 | 2010-01-12 | Tokyo Electron Limited | Method of forming a metal carbide or metal carbonitride film having improved adhesion |
| US7737035B1 (en) | 2006-03-31 | 2010-06-15 | Novellus Systems, Inc. | Dual seal deposition process chamber and process |
| US7780865B2 (en) | 2006-03-31 | 2010-08-24 | Applied Materials, Inc. | Method to improve the step coverage and pattern loading for dielectric films |
| US8012442B2 (en) | 2006-03-31 | 2011-09-06 | Tokyo Electron Limited | Method of forming mixed rare earth nitride and aluminum nitride films by atomic layer deposition |
| US20070237697A1 (en) | 2006-03-31 | 2007-10-11 | Tokyo Electron Limited | Method of forming mixed rare earth oxide and aluminate films by atomic layer deposition |
| US20070287301A1 (en) | 2006-03-31 | 2007-12-13 | Huiwen Xu | Method to minimize wet etch undercuts and provide pore sealing of extreme low k (k<2.5) dielectrics |
| EP2008068A2 (en) | 2006-03-31 | 2008-12-31 | Mesoscribe Technologies, Inc. | Thermocouples |
| US7396491B2 (en) | 2006-04-06 | 2008-07-08 | Osram Sylvania Inc. | UV-emitting phosphor and lamp containing same |
| USD614258S1 (en) | 2006-04-06 | 2010-04-20 | Anemos Company Ltd. | Motionless mixer |
| JP4943047B2 (ja) | 2006-04-07 | 2012-05-30 | 東京エレクトロン株式会社 | 処理装置及び処理方法 |
| US7902074B2 (en) | 2006-04-07 | 2011-03-08 | Micron Technology, Inc. | Simplified pitch doubling process flow |
| US7276447B1 (en) | 2006-04-11 | 2007-10-02 | Applied Materials, Inc. | Plasma dielectric etch process including ex-situ backside polymer removal for low-dielectric constant material |
| JP4764241B2 (ja) | 2006-04-17 | 2011-08-31 | 株式会社日立ハイテクノロジーズ | ドライエッチング方法 |
| US8399349B2 (en) | 2006-04-18 | 2013-03-19 | Air Products And Chemicals, Inc. | Materials and methods of forming controlled void |
| US20070248767A1 (en) | 2006-04-19 | 2007-10-25 | Asm Japan K.K. | Method of self-cleaning of carbon-based film |
| US7655328B2 (en) | 2006-04-20 | 2010-02-02 | Shin-Etsu Chemical Co., Ltd. | Conductive, plasma-resistant member |
| US7410852B2 (en) | 2006-04-21 | 2008-08-12 | International Business Machines Corporation | Opto-thermal annealing methods for forming metal gate and fully silicided gate field effect transistors |
| US8187415B2 (en) | 2006-04-21 | 2012-05-29 | Applied Materials, Inc. | Plasma etch reactor with distribution of etch gases across a wafer surface and a polymer oxidizing gas in an independently fed center gas zone |
| FR2900276B1 (fr) | 2006-04-25 | 2008-09-12 | St Microelectronics Sa | Depot peald d'un materiau a base de silicium |
| JP4345774B2 (ja) | 2006-04-26 | 2009-10-14 | ソニー株式会社 | 半導体装置の製造方法 |
| US20070251456A1 (en) | 2006-04-27 | 2007-11-01 | Applied Materials, Inc., A Delaware Corporation | Composite heater and chill plate |
| US7537804B2 (en) | 2006-04-28 | 2009-05-26 | Micron Technology, Inc. | ALD methods in which two or more different precursors are utilized with one or more reactants to form materials over substrates |
| US8231799B2 (en) | 2006-04-28 | 2012-07-31 | Applied Materials, Inc. | Plasma reactor apparatus with multiple gas injection zones having time-changing separate configurable gas compositions for each zone |
| US20070252233A1 (en) | 2006-04-28 | 2007-11-01 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the semiconductor device |
| US20070259778A1 (en) | 2006-04-28 | 2007-11-08 | Syracuse University | Flameless heating system |
| US7547633B2 (en) | 2006-05-01 | 2009-06-16 | Applied Materials, Inc. | UV assisted thermal processing |
| US7997795B2 (en) | 2006-05-02 | 2011-08-16 | Watlow Electric Manufacturing Company | Temperature sensors and methods of manufacture thereof |
| US7798096B2 (en) | 2006-05-05 | 2010-09-21 | Applied Materials, Inc. | Plasma, UV and ion/neutral assisted ALD or CVD in a batch tool |
| US20070261868A1 (en) | 2006-05-12 | 2007-11-15 | Gross James R | Magnetic torque-limiting device and method |
| KR100829605B1 (ko) | 2006-05-12 | 2008-05-15 | 삼성전자주식회사 | 소노스 타입의 비휘발성 메모리 장치의 제조 방법 |
| US20070266945A1 (en) | 2006-05-16 | 2007-11-22 | Asm Japan K.K. | Plasma cvd apparatus equipped with plasma blocking insulation plate |
| JP2007311558A (ja) | 2006-05-18 | 2007-11-29 | Toshiba Corp | 気相成長装置および気相成長基板の製造方法 |
| US7875312B2 (en) | 2006-05-23 | 2011-01-25 | Air Products And Chemicals, Inc. | Process for producing silicon oxide films for organoaminosilane precursors |
| US8530361B2 (en) | 2006-05-23 | 2013-09-10 | Air Products And Chemicals, Inc. | Process for producing silicon and oxide films from organoaminosilane precursors |
| US7718732B2 (en) | 2006-05-26 | 2010-05-18 | Ineos Manufacturing Belgium Nv | Loop type reactor for polymerization |
| US7825038B2 (en) | 2006-05-30 | 2010-11-02 | Applied Materials, Inc. | Chemical vapor deposition of high quality flow-like silicon dioxide using a silicon containing precursor and atomic oxygen |
| US7790634B2 (en) | 2006-05-30 | 2010-09-07 | Applied Materials, Inc | Method for depositing and curing low-k films for gapfill and conformal film applications |
| US20070289534A1 (en) | 2006-05-30 | 2007-12-20 | Applied Materials, Inc. | Process chamber for dielectric gapfill |
| US20070281106A1 (en) | 2006-05-30 | 2007-12-06 | Applied Materials, Inc. | Process chamber for dielectric gapfill |
| JP2007324350A (ja) | 2006-05-31 | 2007-12-13 | Tokyo Electron Ltd | 熱処理方法および熱処理装置、ならびに基板処理装置 |
| US7623940B2 (en) | 2006-06-02 | 2009-11-24 | The Boeing Company | Direct-manufactured duct interconnects |
| US20070277735A1 (en) | 2006-06-02 | 2007-12-06 | Nima Mokhlesi | Systems for Atomic Layer Deposition of Oxides Using Krypton as an Ion Generating Feeding Gas |
| EP2029790A1 (en) | 2006-06-02 | 2009-03-04 | L'AIR LIQUIDE, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude | Method of forming high-k dielectric films based on novel titanium, zirconium, and hafnium precursors and their use for semiconductor manufacturing |
| US20070281082A1 (en) | 2006-06-02 | 2007-12-06 | Nima Mokhlesi | Flash Heating in Atomic Layer Deposition |
| US20070281105A1 (en) | 2006-06-02 | 2007-12-06 | Nima Mokhlesi | Atomic Layer Deposition of Oxides Using Krypton as an Ion Generating Feeding Gas |
| US8278176B2 (en) | 2006-06-07 | 2012-10-02 | Asm America, Inc. | Selective epitaxial formation of semiconductor films |
| US20080018004A1 (en) | 2006-06-09 | 2008-01-24 | Air Products And Chemicals, Inc. | High Flow GaCl3 Delivery |
| KR100790779B1 (ko) | 2006-06-09 | 2008-01-02 | 주식회사 아이피에스 | 갭 필 능력을 향상시킨 절연막 증착 방법 |
| JP5069427B2 (ja) | 2006-06-13 | 2012-11-07 | 北陸成型工業株式会社 | シャワープレート、並びにそれを用いたプラズマ処理装置、プラズマ処理方法及び電子装置の製造方法 |
| US20090324971A1 (en) | 2006-06-16 | 2009-12-31 | Fujifilm Manufacturing Europe B.V. | Method and apparatus for atomic layer deposition using an atmospheric pressure glow discharge plasma |
| JP5045000B2 (ja) | 2006-06-20 | 2012-10-10 | 東京エレクトロン株式会社 | 成膜装置、ガス供給装置、成膜方法及び記憶媒体 |
| US7625820B1 (en) | 2006-06-21 | 2009-12-01 | Novellus Systems, Inc. | Method of selective coverage of high aspect ratio structures with a conformal film |
| US7482211B2 (en) | 2006-06-22 | 2009-01-27 | Taiwan Semiconductor Manufacturing Company, Ltd. | Junction leakage reduction in SiGe process by implantation |
| US7691757B2 (en) | 2006-06-22 | 2010-04-06 | Asm International N.V. | Deposition of complex nitride films |
| US7554103B2 (en) | 2006-06-26 | 2009-06-30 | Applied Materials, Inc. | Increased tool utilization/reduction in MWBC for UV curing chamber |
| US7833351B2 (en) | 2006-06-26 | 2010-11-16 | Applied Materials, Inc. | Batch processing platform for ALD and CVD |
| US7494272B2 (en) | 2006-06-27 | 2009-02-24 | Applied Materials, Inc. | Dynamic surface annealing using addressable laser array with pyrometry feedback |
| US7718045B2 (en) | 2006-06-27 | 2010-05-18 | Applied Materials, Inc. | Ground shield with reentrant feature |
| US20080153311A1 (en) | 2006-06-28 | 2008-06-26 | Deenesh Padhi | Method for depositing an amorphous carbon film with improved density and step coverage |
| US7867578B2 (en) | 2006-06-28 | 2011-01-11 | Applied Materials, Inc. | Method for depositing an amorphous carbon film with improved density and step coverage |
| US7501355B2 (en) | 2006-06-29 | 2009-03-10 | Applied Materials, Inc. | Decreasing the etch rate of silicon nitride by carbon addition |
| JP4847231B2 (ja) | 2006-06-29 | 2011-12-28 | ルネサスエレクトロニクス株式会社 | 電界に起因する剥離物による汚染を防止する装置 |
| JP4193910B2 (ja) | 2006-06-29 | 2008-12-10 | ダイキン工業株式会社 | 冷媒分流器一体化構造の膨張弁 |
| US20080003425A1 (en) | 2006-06-29 | 2008-01-03 | Spencer James T | Systems and Methods of the Formation of Solid State Metal Boride and Oxide Coatings |
| US7416989B1 (en) | 2006-06-30 | 2008-08-26 | Novellus Systems, Inc. | Adsorption based material removal process |
| WO2008004278A1 (fr) | 2006-07-04 | 2008-01-10 | Toshiba Mitsubishi-Electric Industrial Systems Corporation | Procédé et dispositif de concentration / dilution de gaz spécifique |
| JP4193883B2 (ja) | 2006-07-05 | 2008-12-10 | 住友電気工業株式会社 | 有機金属気相成長装置 |
| JP5027573B2 (ja) | 2006-07-06 | 2012-09-19 | 株式会社小松製作所 | 温度センサおよび温調装置 |
| KR100799735B1 (ko) | 2006-07-10 | 2008-02-01 | 삼성전자주식회사 | 금속 산화물 형성 방법 및 이를 수행하기 위한 장치 |
| US7597523B2 (en) | 2006-07-10 | 2009-10-06 | Asyst Technologies, Inc. | Variable lot size load port |
| KR100782484B1 (ko) | 2006-07-13 | 2007-12-05 | 삼성전자주식회사 | 열처리 설비 |
| JP5171625B2 (ja) | 2006-07-20 | 2013-03-27 | 株式会社日立国際電気 | 半導体デバイスの製造方法及び基板処理装置 |
| JP4098338B2 (ja) | 2006-07-20 | 2008-06-11 | 川崎重工業株式会社 | ウェハ移載装置および基板移載装置 |
| WO2008011579A2 (en) | 2006-07-21 | 2008-01-24 | Aixtron, Inc. | Small volume symmetric flow single wafer ald apparatus |
| US7795160B2 (en) | 2006-07-21 | 2010-09-14 | Asm America Inc. | ALD of metal silicate films |
| WO2008011741A2 (de) | 2006-07-26 | 2008-01-31 | Tec-Sem Ag | Vorrichtung zur lagerung von objekten aus dem bereich der fertigung von elektronischen bauteilen |
| KR100791334B1 (ko) | 2006-07-26 | 2008-01-07 | 삼성전자주식회사 | 원자층 증착법을 이용한 금속 산화막 형성 방법 |
| FR2904328B1 (fr) | 2006-07-27 | 2008-10-24 | St Microelectronics Sa | Depot par adsorption sous un champ electrique |
| EP2052098A1 (en) | 2006-07-27 | 2009-04-29 | L'AIR LIQUIDE, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude | Method of cleaning film forming apparatus and film forming apparatus |
| US8187679B2 (en) | 2006-07-29 | 2012-05-29 | Lotus Applied Technology, Llc | Radical-enhanced atomic layer deposition system and method |
| JP2008041734A (ja) | 2006-08-02 | 2008-02-21 | Sony Corp | 半導体装置および半導体装置の製造方法 |
| JP2008039513A (ja) | 2006-08-03 | 2008-02-21 | Hitachi Metals Ltd | 質量流量制御装置の流量制御補正方法 |
| US7749879B2 (en) | 2006-08-03 | 2010-07-06 | Micron Technology, Inc. | ALD of silicon films on germanium |
| US8080282B2 (en) | 2006-08-08 | 2011-12-20 | Asm Japan K.K. | Method for forming silicon carbide film containing oxygen |
| US20080035306A1 (en) | 2006-08-08 | 2008-02-14 | White John M | Heating and cooling of substrate support |
| GB0615722D0 (en) | 2006-08-08 | 2006-09-20 | Boc Group Plc | Apparatus for conveying a waste stream |
| US7632354B2 (en) | 2006-08-08 | 2009-12-15 | Tokyo Electron Limited | Thermal processing system with improved process gas flow and method for injecting a process gas into a thermal processing system |
| US7514375B1 (en) | 2006-08-08 | 2009-04-07 | Novellus Systems, Inc. | Pulsed bias having high pulse frequency for filling gaps with dielectric material |
| TW200814131A (en) | 2006-08-11 | 2008-03-16 | Schott Ag | External electrode fluorescent lamp with optimized operating efficiency |
| US20080045030A1 (en) | 2006-08-15 | 2008-02-21 | Shigeru Tahara | Substrate processing method, substrate processing system and storage medium |
| US7935942B2 (en) | 2006-08-15 | 2011-05-03 | Varian Semiconductor Equipment Associates, Inc. | Technique for low-temperature ion implantation |
| US20110027999A1 (en) | 2006-08-16 | 2011-02-03 | Freescale Semiconductor, Inc. | Etch method in the manufacture of an integrated circuit |
| KR100825787B1 (ko) | 2006-08-18 | 2008-04-29 | 삼성전자주식회사 | 전하트랩층을 포함하는 반도체 메모리소자 |
| JP5037510B2 (ja) | 2006-08-23 | 2012-09-26 | 株式会社堀場エステック | 集積型ガスパネル装置 |
| JP4961895B2 (ja) | 2006-08-25 | 2012-06-27 | 東京エレクトロン株式会社 | ウェハ搬送装置、ウェハ搬送方法及び記憶媒体 |
| JP4904995B2 (ja) | 2006-08-28 | 2012-03-28 | シンフォニアテクノロジー株式会社 | ロードポート装置 |
| US7611980B2 (en) | 2006-08-30 | 2009-11-03 | Micron Technology, Inc. | Single spacer process for multiplying pitch by a factor greater than two and related intermediate IC structures |
| KR100753020B1 (ko) | 2006-08-30 | 2007-08-30 | 한국화학연구원 | 원자층 증착법을 이용한 비휘발성 부유 게이트 메모리소자를 위한 나노적층체의 제조방법 |
| US7690881B2 (en) | 2006-08-30 | 2010-04-06 | Asm Japan K.K. | Substrate-processing apparatus with buffer mechanism and substrate-transferring apparatus |
| US20080063798A1 (en) | 2006-08-30 | 2008-03-13 | Kher Shreyas S | Precursors and hardware for cvd and ald |
| US20080260963A1 (en) | 2007-04-17 | 2008-10-23 | Hyungsuk Alexander Yoon | Apparatus and method for pre and post treatment of atomic layer deposition |
| US7605030B2 (en) | 2006-08-31 | 2009-10-20 | Micron Technology, Inc. | Hafnium tantalum oxynitride high-k dielectric and metal gates |
| JP4943780B2 (ja) | 2006-08-31 | 2012-05-30 | 株式会社日立ハイテクノロジーズ | プラズマ処理装置およびプラズマ処理方法 |
| US20080241805A1 (en) | 2006-08-31 | 2008-10-02 | Q-Track Corporation | System and method for simulated dosimetry using a real time locating system |
| US7759747B2 (en) | 2006-08-31 | 2010-07-20 | Micron Technology, Inc. | Tantalum aluminum oxynitride high-κ dielectric |
| US7544604B2 (en) | 2006-08-31 | 2009-06-09 | Micron Technology, Inc. | Tantalum lanthanide oxynitride films |
| US20080057659A1 (en) | 2006-08-31 | 2008-03-06 | Micron Technology, Inc. | Hafnium aluminium oxynitride high-K dielectric and metal gates |
| KR100752190B1 (ko) | 2006-09-04 | 2007-08-27 | 동부일렉트로닉스 주식회사 | 반도체 소자의 갭필 방법 |
| JP5138253B2 (ja) | 2006-09-05 | 2013-02-06 | 東京エレクトロン株式会社 | アニール装置 |
| DE502007004378D1 (de) | 2006-09-06 | 2010-08-26 | Kistler Holding Ag | Temperatursensor mit bearbeitbarer Front |
| JP4762835B2 (ja) | 2006-09-07 | 2011-08-31 | 東京エレクトロン株式会社 | 基板処理方法、基板処理装置、プログラムおよびプログラム記録媒体 |
| KR100761857B1 (ko) | 2006-09-08 | 2007-09-28 | 삼성전자주식회사 | 반도체 소자의 미세패턴 형성방법 및 이를 이용한 반도체소자의 제조방법 |
| JP2008066159A (ja) | 2006-09-08 | 2008-03-21 | Noritsu Koki Co Ltd | プラズマ発生装置およびそれを用いるワーク処理装置 |
| TWI275658B (en) | 2006-09-13 | 2007-03-11 | Ind Tech Res Inst | Method of improving surface frame resistance of a substrate |
| USD613829S1 (en) | 2006-09-13 | 2010-04-13 | Hayward Industries, Inc. | Circular suction outlet assembly cover |
| US8852349B2 (en) | 2006-09-15 | 2014-10-07 | Applied Materials, Inc. | Wafer processing hardware for epitaxial deposition with reduced auto-doping and backside defects |
| JP2008072030A (ja) | 2006-09-15 | 2008-03-27 | Matsushita Electric Ind Co Ltd | プラズマ処理装置、プラズマ処理装置の異常検出方法、及びプラズマ処理方法 |
| US7789965B2 (en) | 2006-09-19 | 2010-09-07 | Asm Japan K.K. | Method of cleaning UV irradiation chamber |
| US20080194113A1 (en) | 2006-09-20 | 2008-08-14 | Samsung Electronics Co., Ltd. | Methods and apparatus for semiconductor etching including an electro static chuck |
| US7976898B2 (en) | 2006-09-20 | 2011-07-12 | Asm Genitech Korea Ltd. | Atomic layer deposition apparatus |
| US7902991B2 (en) | 2006-09-21 | 2011-03-08 | Applied Materials, Inc. | Frequency monitoring to detect plasma process abnormality |
| US7718553B2 (en) | 2006-09-21 | 2010-05-18 | Asm Japan K.K. | Method for forming insulation film having high density |
| US9434990B2 (en) | 2012-04-02 | 2016-09-06 | Lux Bio Group, Inc. | Apparatus and method for molecular separation, purification, and sensing |
| JP2008074963A (ja) | 2006-09-21 | 2008-04-03 | Fujifilm Corp | 組成物、膜、およびその製造方法 |
| US7829815B2 (en) | 2006-09-22 | 2010-11-09 | Taiwan Semiconductor Manufacturing Co., Ltd. | Adjustable electrodes and coils for plasma density distribution control |
| JP4899744B2 (ja) | 2006-09-22 | 2012-03-21 | 東京エレクトロン株式会社 | 被処理体の酸化装置 |
| US7740437B2 (en) | 2006-09-22 | 2010-06-22 | Asm International N.V. | Processing system with increased cassette storage capacity |
| EP2070164B9 (en) | 2006-09-25 | 2012-04-11 | Light Sources, Inc. | Snap-lock connector |
| JP4814038B2 (ja) | 2006-09-25 | 2011-11-09 | 株式会社日立国際電気 | 基板処理装置および反応容器の着脱方法 |
| US20080087642A1 (en) | 2006-09-25 | 2008-04-17 | Sawin Herbert H | Method for removing surface deposits in the interior of a chemical vapor deposition reactor |
| US7723648B2 (en) | 2006-09-25 | 2010-05-25 | Tokyo Electron Limited | Temperature controlled substrate holder with non-uniform insulation layer for a substrate processing system |
| USD634329S1 (en) | 2006-09-26 | 2011-03-15 | Margareta Wastrom | Computer platform with forearm support |
| WO2008039943A2 (en) | 2006-09-27 | 2008-04-03 | Vserv Tech | Wafer processing system with dual wafer robots capable of asynchronous motion |
| TWI462179B (zh) | 2006-09-28 | 2014-11-21 | Tokyo Electron Ltd | 用以形成氧化矽膜之成膜方法與裝置 |
| US7476291B2 (en) | 2006-09-28 | 2009-01-13 | Lam Research Corporation | High chamber temperature process and chamber design for photo-resist stripping and post-metal etch passivation |
| JP2008085129A (ja) | 2006-09-28 | 2008-04-10 | Taiheiyo Cement Corp | 基板載置装置 |
| US7767262B2 (en) | 2006-09-29 | 2010-08-03 | Tokyo Electron Limited | Nitrogen profile engineering in nitrided high dielectric constant films |
| JP2008089320A (ja) | 2006-09-29 | 2008-04-17 | Nicom Co Ltd | 流量計測装置 |
| DE102006046374B4 (de) | 2006-09-29 | 2010-11-11 | Advanced Micro Devices, Inc., Sunnyvale | Verfahren zum Reduzieren der Lackvergiftung während des Strukturierens von Siliziumnitridschichten in einem Halbleiterbauelement |
| KR100799152B1 (ko) | 2006-10-02 | 2008-01-29 | 주식회사 하이닉스반도체 | 스토리지노드 쓰러짐을 방지한 실린더형 캐패시터의 제조방법 |
| TW200822253A (en) | 2006-10-02 | 2008-05-16 | Matsushita Electric Industrial Co Ltd | Component crimping apparatus control method, component crimping apparatus, and measuring tool |
| JP2008091761A (ja) | 2006-10-04 | 2008-04-17 | Hitachi Kokusai Electric Inc | 基板処理装置及び半導体装置の製造方法 |
| US7494884B2 (en) | 2006-10-05 | 2009-02-24 | Taiwan Semiconductor Manufacturing Company, Ltd. | SiGe selective growth without a hard mask |
| WO2008042981A2 (en) | 2006-10-05 | 2008-04-10 | Asm America, Inc. | Ald of metal silicate films |
| TWD122456S1 (zh) | 2006-10-10 | 2008-04-11 | 東京威力科創股份有限公司 | 半導體製造用腔室本體 |
| JP5073751B2 (ja) | 2006-10-10 | 2012-11-14 | エーエスエム アメリカ インコーポレイテッド | 前駆体送出システム |
| US8986456B2 (en) | 2006-10-10 | 2015-03-24 | Asm America, Inc. | Precursor delivery system |
| NZ550531A (en) | 2006-10-12 | 2009-05-31 | Canterprise Ltd | A method of producing an implant with an improved bone growth surface |
| US20080087890A1 (en) | 2006-10-16 | 2008-04-17 | Micron Technology, Inc. | Methods to form dielectric structures in semiconductor devices and resulting devices |
| CN100451163C (zh) | 2006-10-18 | 2009-01-14 | 中微半导体设备(上海)有限公司 | 用于半导体工艺件处理反应器的气体分布装置及其反应器 |
| JP2008108860A (ja) | 2006-10-25 | 2008-05-08 | Elpida Memory Inc | 半導体装置の製造方法 |
| US20080099147A1 (en) | 2006-10-26 | 2008-05-01 | Nyi Oo Myo | Temperature controlled multi-gas distribution assembly |
| US8795771B2 (en) | 2006-10-27 | 2014-08-05 | Sean T. Barry | ALD of metal-containing films using cyclopentadienyl compounds |
| JP2008108991A (ja) | 2006-10-27 | 2008-05-08 | Daihen Corp | ワーク保持機構 |
| US7851232B2 (en) | 2006-10-30 | 2010-12-14 | Novellus Systems, Inc. | UV treatment for carbon-containing low-k dielectric repair in semiconductor processing |
| US9245739B2 (en) | 2006-11-01 | 2016-01-26 | Lam Research Corporation | Low-K oxide deposition by hydrolysis and condensation |
| US7888273B1 (en) | 2006-11-01 | 2011-02-15 | Novellus Systems, Inc. | Density gradient-free gap fill |
| US7727864B2 (en) | 2006-11-01 | 2010-06-01 | Asm America, Inc. | Controlled composition using plasma-enhanced atomic layer deposition |
| US7611751B2 (en) | 2006-11-01 | 2009-11-03 | Asm America, Inc. | Vapor deposition of metal carbide films |
| JP2008117903A (ja) | 2006-11-02 | 2008-05-22 | Toshiba Corp | 半導体装置の製造方法 |
| US7955516B2 (en) | 2006-11-02 | 2011-06-07 | Applied Materials, Inc. | Etching of nano-imprint templates using an etch reactor |
| KR101064354B1 (ko) | 2006-11-09 | 2011-09-14 | 가부시키가이샤 알박 | 장벽막 형성 방법 |
| WO2008056295A1 (en) | 2006-11-09 | 2008-05-15 | Nxp B.V. | A semiconductor device and a method of manufacturing thereof |
| KR101447184B1 (ko) | 2006-11-10 | 2014-10-08 | 엘아이지에이디피 주식회사 | 게이트슬릿 개폐장치가 구비된 공정챔버 |
| JP4464949B2 (ja) | 2006-11-10 | 2010-05-19 | 株式会社日立国際電気 | 基板処理装置及び選択エピタキシャル膜成長方法 |
| US20080179104A1 (en) | 2006-11-14 | 2008-07-31 | Smith International, Inc. | Nano-reinforced wc-co for improved properties |
| US7749574B2 (en) | 2006-11-14 | 2010-07-06 | Applied Materials, Inc. | Low temperature ALD SiO2 |
| US7776395B2 (en) | 2006-11-14 | 2010-08-17 | Applied Materials, Inc. | Method of depositing catalyst assisted silicates of high-k materials |
| US7671134B2 (en) | 2006-11-15 | 2010-03-02 | Brady Worldwide, Inc. | Compositions with improved adhesion to low surface energy substrates |
| US7976634B2 (en) | 2006-11-21 | 2011-07-12 | Applied Materials, Inc. | Independent radiant gas preheating for precursor disassociation control and gas reaction kinetics in low temperature CVD systems |
| WO2008064080A1 (en) | 2006-11-22 | 2008-05-29 | S.O.I.Tec Silicon On Insulator Technologies | High volume delivery system for gallium trichloride |
| US20080118334A1 (en) | 2006-11-22 | 2008-05-22 | Bonora Anthony C | Variable pitch storage shelves |
| US8128333B2 (en) | 2006-11-27 | 2012-03-06 | Hitachi Kokusai Electric Inc. | Substrate processing apparatus and manufacturing method for semiconductor devices |
| US20080124946A1 (en) | 2006-11-28 | 2008-05-29 | Air Products And Chemicals, Inc. | Organosilane compounds for modifying dielectrical properties of silicon oxide and silicon nitride films |
| US7758698B2 (en) | 2006-11-28 | 2010-07-20 | Applied Materials, Inc. | Dual top gas feed through distributor for high density plasma chamber |
| US20080121177A1 (en) | 2006-11-28 | 2008-05-29 | Applied Materials, Inc. | Dual top gas feed through distributor for high density plasma chamber |
| US7807575B2 (en) | 2006-11-29 | 2010-10-05 | Micron Technology, Inc. | Methods to reduce the critical dimension of semiconductor devices |
| US7853364B2 (en) | 2006-11-30 | 2010-12-14 | Veeco Instruments, Inc. | Adaptive controller for ion source |
| US20080132046A1 (en) | 2006-12-04 | 2008-06-05 | Varian Semiconductor Equipment Associates, Inc. | Plasma Doping With Electronically Controllable Implant Angle |
| US20080178805A1 (en) | 2006-12-05 | 2008-07-31 | Applied Materials, Inc. | Mid-chamber gas distribution plate, tuned plasma flow control grid and electrode |
| US7906174B1 (en) | 2006-12-07 | 2011-03-15 | Novellus Systems, Inc. | PECVD methods for producing ultra low-k dielectric films using UV treatment |
| US20080142483A1 (en) | 2006-12-07 | 2008-06-19 | Applied Materials, Inc. | Multi-step dep-etch-dep high density plasma chemical vapor deposition processes for dielectric gapfills |
| EP2089897A2 (en) | 2006-12-07 | 2009-08-19 | Innovalight, Inc. | Methods for creating a densified group iv semiconductor nanoparticle thin film |
| JP2008147393A (ja) | 2006-12-08 | 2008-06-26 | Toshiba Corp | 半導体装置及びその製造方法 |
| US20080202689A1 (en) | 2006-12-08 | 2008-08-28 | Tes Co., Ltd. | Plasma processing apparatus |
| US7960236B2 (en) | 2006-12-12 | 2011-06-14 | Applied Materials, Inc. | Phosphorus containing Si epitaxial layers in N-type source/drain junctions |
| US20080173238A1 (en) | 2006-12-12 | 2008-07-24 | Hitachi Kokusai Electric Inc. | Substrate processing apparatus, method of manufacturing semiconductor device, and reaction vessel |
| US20080142046A1 (en) | 2006-12-13 | 2008-06-19 | Andrew David Johnson | Thermal F2 etch process for cleaning CVD chambers |
| US7378618B1 (en) | 2006-12-14 | 2008-05-27 | Applied Materials, Inc. | Rapid conductive cooling using a secondary process plane |
| USD583395S1 (en) | 2006-12-15 | 2008-12-23 | Tokyo Electron Limited | Cover for a heater stage of a plasma processing apparatus |
| US8362561B2 (en) | 2006-12-15 | 2013-01-29 | Nxp B.V. | Transistor device and method of manufacturing such a transistor device |
| JP5662022B2 (ja) | 2006-12-19 | 2015-01-28 | コーニンクレッカ フィリップス エヌ ヴェ | 製造ラインでオブジェクトを加熱するシステム及び方法 |
| US8178436B2 (en) | 2006-12-21 | 2012-05-15 | Intel Corporation | Adhesion and electromigration performance at an interface between a dielectric and metal |
| KR20080058620A (ko) | 2006-12-22 | 2008-06-26 | 세메스 주식회사 | 복수 개의 노즐들로 가스를 분할 공급하는 플라즈마 화학기상 증착 설비 |
| JP4553891B2 (ja) | 2006-12-27 | 2010-09-29 | シャープ株式会社 | 半導体層製造方法 |
| JP2008166360A (ja) | 2006-12-27 | 2008-07-17 | Hitachi Ltd | 半導体集積回路装置 |
| US8120114B2 (en) | 2006-12-27 | 2012-02-21 | Intel Corporation | Transistor having an etch stop layer including a metal compound that is selectively formed over a metal gate |
| DE202006019492U1 (de) | 2006-12-27 | 2007-03-01 | Blum, Holger | Filter- und Sterilisiervorrichtung |
| US7682891B2 (en) | 2006-12-28 | 2010-03-23 | Intel Corporation | Tunable gate electrode work function material for transistor applications |
| GB2445188B (en) | 2006-12-29 | 2009-07-01 | Thermo Fisher Scientific Inc | Apparatus and method for generating nitrogen oxides |
| US8011317B2 (en) | 2006-12-29 | 2011-09-06 | Intermolecular, Inc. | Advanced mixing system for integrated tool having site-isolated reactors |
| KR100877153B1 (ko) | 2007-01-09 | 2009-01-09 | 한국전자통신연구원 | 전자소자용 ＺｎＯ 반도체막 형성방법 및 상기 반도체막을포함하는 박막 트랜지스터 |
| JP2008172083A (ja) | 2007-01-12 | 2008-07-24 | Sharp Corp | 気相成長装置および気相成長方法 |
| US7860379B2 (en) | 2007-01-15 | 2010-12-28 | Applied Materials, Inc. | Temperature measurement and control of wafer support in thermal processing chamber |
| DE102007003416A1 (de) | 2007-01-16 | 2008-07-17 | Hansgrohe Ag | Duschvorrichtung |
| JP5108489B2 (ja) | 2007-01-16 | 2012-12-26 | 株式会社日立ハイテクノロジーズ | プラズマ処理方法 |
| DE102007002962B3 (de) | 2007-01-19 | 2008-07-31 | Qimonda Ag | Verfahren zum Herstellen einer dielektrischen Schicht und zum Herstellen eines Kondensators |
| US7725012B2 (en) | 2007-01-19 | 2010-05-25 | Asm America, Inc. | Movable radiant heat sources |
| WO2008089168A2 (en) | 2007-01-19 | 2008-07-24 | Applied Materials, Inc. | Plasma immersion chamber |
| JP4299863B2 (ja) | 2007-01-22 | 2009-07-22 | エルピーダメモリ株式会社 | 半導体装置の製造方法 |
| WO2008143716A2 (en) | 2007-01-22 | 2008-11-27 | Innovalight, Inc. | In situ modification of group iv nanoparticles using gas phase nanoparticle reactors |
| JP5109376B2 (ja) | 2007-01-22 | 2012-12-26 | 東京エレクトロン株式会社 | 加熱装置、加熱方法及び記憶媒体 |
| US7550090B2 (en) | 2007-01-23 | 2009-06-23 | Applied Materials, Inc. | Oxygen plasma clean to remove carbon species deposited on a glass dome surface |
| US7993457B1 (en) | 2007-01-23 | 2011-08-09 | Novellus Systems, Inc. | Deposition sub-chamber with variable flow |
| US7833353B2 (en) | 2007-01-24 | 2010-11-16 | Asm Japan K.K. | Liquid material vaporization apparatus for semiconductor processing apparatus |
| US20080173239A1 (en) | 2007-01-24 | 2008-07-24 | Yuri Makarov | Method, system, and apparatus for the growth of SiC and related or similar material, by chemical vapor deposition, using precursors in modified cold-wall reactor |
| US7598170B2 (en) | 2007-01-26 | 2009-10-06 | Asm America, Inc. | Plasma-enhanced ALD of tantalum nitride films |
| CN101589459A (zh) | 2007-01-26 | 2009-11-25 | 应用材料股份有限公司 | 用于层间介电气隙的pevcd沉积牺牲聚合物薄膜的紫外光固化 |
| JP4564973B2 (ja) | 2007-01-26 | 2010-10-20 | 株式会社日立ハイテクノロジーズ | プラズマ処理装置 |
| US7858898B2 (en) | 2007-01-26 | 2010-12-28 | Lam Research Corporation | Bevel etcher with gap control |
| JP4270284B2 (ja) | 2007-01-30 | 2009-05-27 | トヨタ自動車株式会社 | 車輪状態監視システムおよび車輪状態検出装置 |
| US7967996B2 (en) | 2007-01-30 | 2011-06-28 | Applied Materials, Inc. | Process for wafer backside polymer removal and wafer front side photoresist removal |
| US20080179715A1 (en) | 2007-01-30 | 2008-07-31 | Micron Technology, Inc. | Shallow trench isolation using atomic layer deposition during fabrication of a semiconductor device |
| JP2008192643A (ja) | 2007-01-31 | 2008-08-21 | Tokyo Electron Ltd | 基板処理装置 |
| JP4569638B2 (ja) | 2007-01-31 | 2010-10-27 | 株式会社デンソー | 温度センサ |
| JP4896899B2 (ja) | 2007-01-31 | 2012-03-14 | 東京エレクトロン株式会社 | 基板処理装置およびパーティクル付着防止方法 |
| DE102007004867B4 (de) | 2007-01-31 | 2009-07-30 | Advanced Micro Devices, Inc., Sunnyvale | Verfahren zum Erhöhen der Zuverlässigkeit von kupferbasierten Metallisierungsstrukturen in einem Mikrostrukturbauelement durch Anwenden von Aluminiumnitrid |
| KR101144497B1 (ko) | 2007-02-06 | 2012-05-11 | 샌트랄 글래스 컴퍼니 리미티드 | 저유전율막의 개질제 및 제조방법 |
| US7959735B2 (en) | 2007-02-08 | 2011-06-14 | Applied Materials, Inc. | Susceptor with insulative inserts |
| JP2008198629A (ja) | 2007-02-08 | 2008-08-28 | Mitsubishi Electric Corp | 表面処理方法および太陽電池セル |
| US8043432B2 (en) | 2007-02-12 | 2011-10-25 | Tokyo Electron Limited | Atomic layer deposition systems and methods |
| US7892964B2 (en) | 2007-02-14 | 2011-02-22 | Micron Technology, Inc. | Vapor deposition methods for forming a metal-containing layer on a substrate |
| US7851360B2 (en) | 2007-02-14 | 2010-12-14 | Intel Corporation | Organometallic precursors for seed/barrier processes and methods thereof |
| US7500397B2 (en) | 2007-02-15 | 2009-03-10 | Air Products And Chemicals, Inc. | Activated chemical process for enhancing material properties of dielectric films |
| USD576001S1 (en) | 2007-02-16 | 2008-09-02 | Brenda Brunderman | Faux brick tool |
| JP5313171B2 (ja) | 2007-02-21 | 2013-10-09 | レール・リキード−ソシエテ・アノニム・プール・レテュード・エ・レクスプロワタシオン・デ・プロセデ・ジョルジュ・クロード | ルテニウムベースの膜を基板上に形成するための方法 |
| JP2008202107A (ja) | 2007-02-21 | 2008-09-04 | Hitachi Kokusai Electric Inc | 基板処理装置 |
| JP4805862B2 (ja) | 2007-02-21 | 2011-11-02 | 富士通セミコンダクター株式会社 | 基板処理装置、基板処理方法、及び半導体装置の製造方法 |
| US7871198B2 (en) | 2007-02-26 | 2011-01-18 | Battelle Energy Alliance, Llc | High-temperature thermocouples and related methods |
| US20080207007A1 (en) | 2007-02-27 | 2008-08-28 | Air Products And Chemicals, Inc. | Plasma Enhanced Cyclic Chemical Vapor Deposition of Silicon-Containing Films |
| DE102007009914B4 (de) | 2007-02-28 | 2010-04-22 | Advanced Micro Devices, Inc., Sunnyvale | Halbleiterbauelement in Form eines Feldeffekttransistors mit einem Zwischenschichtdielektrikumsmaterial mit erhöhter innerer Verspannung und Verfahren zur Herstellung desselben |
| CN101647090B (zh) | 2007-03-01 | 2012-08-29 | 应用材料公司 | 射频遮板及沉积方法 |
| US20080216077A1 (en) | 2007-03-02 | 2008-09-04 | Applied Materials, Inc. | Software sequencer for integrated substrate processing system |
| US20080216958A1 (en) | 2007-03-07 | 2008-09-11 | Novellus Systems, Inc. | Plasma Reaction Apparatus Having Pre-Seasoned Showerheads and Methods for Manufacturing the Same |
| US8012259B2 (en) | 2007-03-09 | 2011-09-06 | Hitachi Kokusai Electric, Inc. | Substrate processing apparatus |
| US20080220619A1 (en) | 2007-03-09 | 2008-09-11 | Asm Japan K.K. | Method for increasing mechanical strength of dielectric film by using sequential combination of two types of uv irradiation |
| US20080223130A1 (en) | 2007-03-13 | 2008-09-18 | Provina Incorporated | Method and device for measuring density of a liquid |
| EP2127046B1 (en) | 2007-03-16 | 2010-11-03 | Philips Intellectual Property & Standards GmbH | Vertical extended cavity surface emission laser and method for manufacturing a light emitting component of the same |
| US7621672B2 (en) | 2007-03-19 | 2009-11-24 | Babcock & Wilcox Technical Services Y-12, Llc | Thermocouple shield |
| US7833913B2 (en) | 2007-03-20 | 2010-11-16 | Tokyo Electron Limited | Method of forming crystallographically stabilized doped hafnium zirconium based films |
| US20080230352A1 (en) | 2007-03-20 | 2008-09-25 | Yasunari Hirata | Conveyer apparatus |
| US7607647B2 (en) | 2007-03-20 | 2009-10-27 | Kla-Tencor Technologies Corporation | Stabilizing a substrate using a vacuum preload air bearing chuck |
| US8298379B2 (en) | 2007-03-22 | 2012-10-30 | Tokyo Electron Limited | Method and apparatus for extending chamber component life in a substrate processing system |
| US8906249B2 (en) | 2007-03-22 | 2014-12-09 | Panasonic Corporation | Plasma processing apparatus and plasma processing method |
| US7763869B2 (en) | 2007-03-23 | 2010-07-27 | Asm Japan K.K. | UV light irradiating apparatus with liquid filter |
| KR20070041701A (ko) | 2007-03-26 | 2007-04-19 | 노영환 | 제습냉난방환기 시스템 |
| JP5034594B2 (ja) | 2007-03-27 | 2012-09-26 | 東京エレクトロン株式会社 | 成膜装置、成膜方法及び記憶媒体 |
| US7435987B1 (en) | 2007-03-27 | 2008-10-14 | Intel Corporation | Forming a type I heterostructure in a group IV semiconductor |
| US20080241387A1 (en) | 2007-03-29 | 2008-10-02 | Asm International N.V. | Atomic layer deposition reactor |
| US7588749B2 (en) | 2007-03-29 | 2009-09-15 | Minimus Spine, Inc. | Apparatus, method and system for delivering oxygen-ozone |
| US20100101728A1 (en) | 2007-03-29 | 2010-04-29 | Tokyo Electron Limited | Plasma process apparatus |
| US7651961B2 (en) | 2007-03-30 | 2010-01-26 | Tokyo Electron Limited | Method for forming strained silicon nitride films and a device containing such films |
| US20080237604A1 (en) | 2007-03-30 | 2008-10-02 | Husam Niman Alshareef | Plasma nitrided gate oxide, high-k metal gate based cmos device |
| JP2008251826A (ja) | 2007-03-30 | 2008-10-16 | Nec Electronics Corp | 半導体装置の製造方法 |
| ITMI20070671A1 (it) | 2007-04-02 | 2008-10-03 | St Microelectronics Srl | Architettura circuitale su base organica e relativo metodo fi realizzazione |
| US8235001B2 (en) | 2007-04-02 | 2012-08-07 | Hitachi Kokusai Electric Inc. | Substrate processing apparatus and method for manufacturing semiconductor device |
| US20080241384A1 (en) | 2007-04-02 | 2008-10-02 | Asm Genitech Korea Ltd. | Lateral flow deposition apparatus and method of depositing film by using the apparatus |
| US8242028B1 (en) | 2007-04-03 | 2012-08-14 | Novellus Systems, Inc. | UV treatment of etch stop and hard mask films for selectivity and hermeticity enhancement |
| KR100829759B1 (ko) | 2007-04-04 | 2008-05-15 | 삼성에스디아이 주식회사 | 카바이드 유도 탄소를 이용한 카본나노튜브 혼성체, 이를포함하는 전자 방출원 및 상기 전자 방출원을 구비한 전자방출 소자 |
| US20080246101A1 (en) | 2007-04-05 | 2008-10-09 | Applied Materials Inc. | Method of poly-silicon grain structure formation |
| US7592212B2 (en) | 2007-04-06 | 2009-09-22 | Micron Technology, Inc. | Methods for determining a dose of an impurity implanted in a semiconductor substrate |
| US8362220B2 (en) | 2007-04-13 | 2013-01-29 | The Board Of Trustees Of The University Of Illinois | Metal complex compositions and methods for making metal-containing films |
| CN101641272B (zh) | 2007-04-16 | 2011-11-16 | 株式会社爱发科 | 输送机和成膜装置及其维护方法 |
| WO2008129977A1 (ja) | 2007-04-17 | 2008-10-30 | Ulvac, Inc. | 成膜装置 |
| US7807579B2 (en) | 2007-04-19 | 2010-10-05 | Applied Materials, Inc. | Hydrogen ashing enhanced with water vapor and diluent gas |
| USD562357S1 (en) | 2007-04-20 | 2008-02-19 | Alamo Group, Inc. | Disk for rotary mower knives |
| US20080257102A1 (en) | 2007-04-20 | 2008-10-23 | William Packer | Mechanically retained motorcycle handlebar grips |
| US8357214B2 (en) | 2007-04-26 | 2013-01-22 | Trulite, Inc. | Apparatus, system, and method for generating a gas from solid reactant pouches |
| JP4853374B2 (ja) | 2007-04-27 | 2012-01-11 | 東京エレクトロン株式会社 | 塗布、現像装置及びその方法並びに記憶媒体 |
| US7575968B2 (en) | 2007-04-30 | 2009-08-18 | Freescale Semiconductor, Inc. | Inverse slope isolation and dual surface orientation integration |
| US7713874B2 (en) | 2007-05-02 | 2010-05-11 | Asm America, Inc. | Periodic plasma annealing in an ALD-type process |
| KR100894098B1 (ko) | 2007-05-03 | 2009-04-20 | 주식회사 하이닉스반도체 | 빠른 소거속도 및 향상된 리텐션 특성을 갖는 불휘발성메모리소자 및 그 제조방법 |
| US20110067522A1 (en) | 2007-05-08 | 2011-03-24 | Lai Ching-Chuan | Bicycle handlebar grip |
| US8110099B2 (en) | 2007-05-09 | 2012-02-07 | Contech Stormwater Solutions Inc. | Stormwater filter assembly |
| DE102007022431A1 (de) | 2007-05-09 | 2008-11-13 | Leybold Optics Gmbh | Behandlungssystem für flache Substrate |
| US8057601B2 (en) | 2007-05-09 | 2011-11-15 | Applied Materials, Inc. | Apparatus and method for supporting, positioning and rotating a substrate in a processing chamber |
| CN101308794B (zh) | 2007-05-15 | 2010-09-15 | 应用材料股份有限公司 | 钨材料的原子层沉积 |
| JP5103056B2 (ja) | 2007-05-15 | 2012-12-19 | ルネサスエレクトロニクス株式会社 | 半導体装置の製造方法 |
| US7750429B2 (en) | 2007-05-15 | 2010-07-06 | International Business Machines Corporation | Self-aligned and extended inter-well isolation structure |
| GB0709723D0 (en) | 2007-05-22 | 2007-06-27 | Goodrich Control Sys Ltd | Temperature sensing |
| JP4898556B2 (ja) | 2007-05-23 | 2012-03-14 | 株式会社日立ハイテクノロジーズ | プラズマ処理装置 |
| US7874726B2 (en) | 2007-05-24 | 2011-01-25 | Asm America, Inc. | Thermocouple |
| US20080289650A1 (en) | 2007-05-24 | 2008-11-27 | Asm America, Inc. | Low-temperature cleaning of native oxide |
| US7942969B2 (en) | 2007-05-30 | 2011-05-17 | Applied Materials, Inc. | Substrate cleaning chamber and components |
| US20080299326A1 (en) | 2007-05-30 | 2008-12-04 | Asm Japan K.K. | Plasma cvd apparatus having non-metal susceptor |
| CN101678974A (zh) | 2007-05-31 | 2010-03-24 | 应用材料股份有限公司 | 延伸scara机械手臂连接的方法及设备 |
| US7807578B2 (en) | 2007-06-01 | 2010-10-05 | Applied Materials, Inc. | Frequency doubling using spacer mask |
| US20090017631A1 (en) | 2007-06-01 | 2009-01-15 | Bencher Christopher D | Self-aligned pillar patterning using multiple spacer masks |
| US8084352B2 (en) | 2007-06-04 | 2011-12-27 | Panasonic Corporation | Method of manufacturing semiconductor device |
| US7781352B2 (en) | 2007-06-06 | 2010-08-24 | Asm Japan K.K. | Method for forming inorganic silazane-based dielectric film |
| US7955650B2 (en) | 2007-06-07 | 2011-06-07 | Asm Japan K.K. | Method for forming dielectric film using porogen gas |
| US20080302303A1 (en) | 2007-06-07 | 2008-12-11 | Applied Materials, Inc. | Methods and apparatus for depositing a uniform silicon film with flow gradient designs |
| US20080305014A1 (en) | 2007-06-07 | 2008-12-11 | Hitachi Kokusai Electric Inc. | Substrate processing apparatus |
| US8142606B2 (en) | 2007-06-07 | 2012-03-27 | Applied Materials, Inc. | Apparatus for depositing a uniform silicon film and methods for manufacturing the same |
| KR101011490B1 (ko) | 2007-06-08 | 2011-01-31 | 도쿄엘렉트론가부시키가이샤 | 패터닝 방법 |
| KR101101785B1 (ko) | 2007-06-08 | 2012-01-05 | 도쿄엘렉트론가부시키가이샤 | 패터닝 방법 |
| JP4427562B2 (ja) | 2007-06-11 | 2010-03-10 | 株式会社東芝 | パターン形成方法 |
| US20080303744A1 (en) | 2007-06-11 | 2008-12-11 | Tokyo Electron Limited | Plasma processing system, antenna, and use of plasma processing system |
| US8329541B2 (en) | 2007-06-15 | 2012-12-11 | Taiwan Semiconductor Manufacturing Company, Ltd. | InP-based transistor fabrication |
| US20080314319A1 (en) | 2007-06-19 | 2008-12-25 | Memc Electronic Materials, Inc. | Susceptor for improving throughput and reducing wafer damage |
| US8017182B2 (en) | 2007-06-21 | 2011-09-13 | Asm International N.V. | Method for depositing thin films by mixed pulsed CVD and ALD |
| USD575713S1 (en) | 2007-06-21 | 2008-08-26 | Ratcliffe Peter W | Vehicle accessory |
| CN100590804C (zh) | 2007-06-22 | 2010-02-17 | 中芯国际集成电路制造(上海)有限公司 | 原子层沉积方法以及形成的半导体器件 |
| US20080314892A1 (en) | 2007-06-25 | 2008-12-25 | Graham Robert G | Radiant shield |
| US20090004875A1 (en) | 2007-06-27 | 2009-01-01 | Meihua Shen | Methods of trimming amorphous carbon film for forming ultra thin structures on a substrate |
| US8905124B2 (en) | 2007-06-27 | 2014-12-09 | Taiwan Semiconductor Manufacturing Company, Ltd. | Temperature controlled loadlock chamber |
| KR101593352B1 (ko) | 2007-06-28 | 2016-02-15 | 인티그리스, 인코포레이티드 | 이산화규소 간극 충전용 전구체 |
| US20090000550A1 (en) | 2007-06-29 | 2009-01-01 | Applied Materials, Inc. | Manifold assembly |
| TW200903625A (en) | 2007-07-04 | 2009-01-16 | Advanced Micro Fab Equip Inc | Multi-station decoupled reactive ion etch chamber |
| US20090033907A1 (en) | 2007-07-05 | 2009-02-05 | Nikon Corporation | Devices and methods for decreasing residual chucking forces |
| JP2009016672A (ja) | 2007-07-06 | 2009-01-22 | Tokyo Electron Ltd | 半導体装置の製造方法、半導体装置、半導体製造装置及び記憶媒体。 |
| US7875486B2 (en) | 2007-07-10 | 2011-01-25 | Applied Materials, Inc. | Solar cells and methods and apparatuses for forming the same including I-layer and N-layer chamber cleaning |
| US8322533B2 (en) | 2007-07-11 | 2012-12-04 | Shin-Etsu Polymer Co., Ltd. | Lid body for substrate storage container and substrate storage container |
| US8021514B2 (en) | 2007-07-11 | 2011-09-20 | Applied Materials, Inc. | Remote plasma source for pre-treatment of substrates prior to deposition |
| KR101275025B1 (ko) | 2007-07-12 | 2013-06-14 | 삼성전자주식회사 | 반도체 소자용 배선 구조물 및 이의 형성방법 |
| US7501292B2 (en) | 2007-07-19 | 2009-03-10 | Asm Japan K.K. | Method for managing UV irradiation for curing semiconductor substrate |
| US7651269B2 (en) | 2007-07-19 | 2010-01-26 | Lam Research Corporation | Temperature probes having a thermally isolated tip |
| JP4900110B2 (ja) | 2007-07-20 | 2012-03-21 | 東京エレクトロン株式会社 | 薬液気化タンク及び薬液処理システム |
| US7720560B2 (en) | 2007-07-26 | 2010-05-18 | International Business Machines Corporation | Semiconductor manufacturing process monitoring |
| US8008166B2 (en) | 2007-07-26 | 2011-08-30 | Applied Materials, Inc. | Method and apparatus for cleaning a substrate surface |
| USD596476S1 (en) | 2007-07-27 | 2009-07-21 | Daniel P. Welch | Handle bar grip |
| JP5058084B2 (ja) | 2007-07-27 | 2012-10-24 | 株式会社半導体エネルギー研究所 | 光電変換装置の作製方法及びマイクロ波プラズマｃｖｄ装置 |
| US8004045B2 (en) | 2007-07-27 | 2011-08-23 | Panasonic Corporation | Semiconductor device and method for producing the same |
| US8980756B2 (en) | 2007-07-30 | 2015-03-17 | Micron Technology, Inc. | Methods for device fabrication using pitch reduction |
| US7910497B2 (en) | 2007-07-30 | 2011-03-22 | Applied Materials, Inc. | Method of forming dielectric layers on a substrate and apparatus therefor |
| US20090035946A1 (en) | 2007-07-31 | 2009-02-05 | Asm International N.V. | In situ deposition of different metal-containing films using cyclopentadienyl metal precursors |
| US8367227B2 (en) | 2007-08-02 | 2013-02-05 | Applied Materials, Inc. | Plasma-resistant ceramics with controlled electrical resistivity |
| WO2009020024A1 (ja) | 2007-08-03 | 2009-02-12 | Shin-Etsu Handotai Co., Ltd. | サセプタ及びシリコンエピタキシャルウェーハの製造方法 |
| US20090035463A1 (en) | 2007-08-03 | 2009-02-05 | Tokyo Electron Limited | Thermal processing system and method for forming an oxide layer on substrates |
| JP2009044023A (ja) | 2007-08-10 | 2009-02-26 | Hitachi Kokusai Electric Inc | 半導体装置の製造方法および基板処理装置 |
| US20090041984A1 (en) | 2007-08-10 | 2009-02-12 | Nano Terra Inc. | Structured Smudge-Resistant Coatings and Methods of Making and Using the Same |
| US20090041952A1 (en) | 2007-08-10 | 2009-02-12 | Asm Genitech Korea Ltd. | Method of depositing silicon oxide films |
| TWI405295B (zh) | 2007-08-13 | 2013-08-11 | Advanced Display Proc Eng Co | 基板處理裝置及方法 |
| US8443484B2 (en) | 2007-08-14 | 2013-05-21 | Hitachi Kokusai Electric Inc. | Substrate processing apparatus |
| GB0715854D0 (en) | 2007-08-15 | 2007-09-26 | Enigma Diagnostics Ltd | Apparatus and method for calibration of non-contact thermal sensors |
| JP5514413B2 (ja) | 2007-08-17 | 2014-06-04 | 東京エレクトロン株式会社 | プラズマエッチング方法 |
| KR20090018290A (ko) | 2007-08-17 | 2009-02-20 | 에이에스엠지니텍코리아 주식회사 | 증착 장치 |
| US8084372B2 (en) | 2007-08-24 | 2011-12-27 | Tokyo Electron Limited | Substrate processing method and computer storage medium |
| US20090052498A1 (en) | 2007-08-24 | 2009-02-26 | Asm America, Inc. | Thermocouple |
| US7745352B2 (en) | 2007-08-27 | 2010-06-29 | Applied Materials, Inc. | Curing methods for silicon dioxide thin films deposited from alkoxysilane precursor with harp II process |
| US20100252434A1 (en) | 2007-08-28 | 2010-10-07 | University Of Florida Research Foundation, Inc. | Bio-Sensor Using Gated Electrokinetic Transport |
| JP2009076881A (ja) | 2007-08-30 | 2009-04-09 | Tokyo Electron Ltd | 処理ガス供給システム及び処理装置 |
| WO2009028619A1 (ja) | 2007-08-30 | 2009-03-05 | Tokyo Electron Limited | 処理ガス供給システム及び処理装置 |
| US8962101B2 (en) | 2007-08-31 | 2015-02-24 | Novellus Systems, Inc. | Methods and apparatus for plasma-based deposition |
| JP2009060035A (ja) | 2007-09-03 | 2009-03-19 | Shinko Electric Ind Co Ltd | 静電チャック部材、その製造方法及び静電チャック装置 |
| US7831135B2 (en) | 2007-09-04 | 2010-11-09 | Sokudo Co., Ltd. | Method and system for controlling bake plate temperature in a semiconductor processing chamber |
| US8334015B2 (en) | 2007-09-05 | 2012-12-18 | Intermolecular, Inc. | Vapor based combinatorial processing |
| US7832354B2 (en) | 2007-09-05 | 2010-11-16 | Applied Materials, Inc. | Cathode liner with wafer edge gas injection in a plasma reactor chamber |
| US7879250B2 (en) | 2007-09-05 | 2011-02-01 | Applied Materials, Inc. | Method of processing a workpiece in a plasma reactor with independent wafer edge process gas injection |
| EP2188413B1 (en) | 2007-09-07 | 2018-07-11 | Fujifilm Manufacturing Europe B.V. | Method for atomic layer deposition using an atmospheric pressure glow discharge plasma |
| CA122619S (en) | 2007-10-09 | 2010-01-27 | Silvano Breda | Shower strainer |
| JP5347294B2 (ja) | 2007-09-12 | 2013-11-20 | 東京エレクトロン株式会社 | 成膜装置、成膜方法及び記憶媒体 |
| US20090075491A1 (en) | 2007-09-13 | 2009-03-19 | Tokyo Electron Limited | Method for curing a dielectric film |
| CN101889331A (zh) | 2007-09-18 | 2010-11-17 | 乔治洛德方法研究和开发液化空气有限公司 | 形成含硅膜的方法 |
| JP4986784B2 (ja) | 2007-09-18 | 2012-07-25 | 東京エレクトロン株式会社 | 処理システムの制御装置、処理システムの制御方法および制御プログラムを記憶した記憶媒体 |
| US20120122319A1 (en) | 2007-09-19 | 2012-05-17 | Hironobu Shimizu | Coating method for coating reaction tube prior to film forming process |
| JP2009076661A (ja) | 2007-09-20 | 2009-04-09 | Elpida Memory Inc | 半導体装置の製造方法 |
| JP2009081223A (ja) | 2007-09-26 | 2009-04-16 | Tokyo Electron Ltd | 静電チャック部材 |
| JP2009087989A (ja) | 2007-09-27 | 2009-04-23 | Nuflare Technology Inc | エピタキシャル成長膜形成方法 |
| US7824743B2 (en) | 2007-09-28 | 2010-11-02 | Applied Materials, Inc. | Deposition processes for titanium nitride barrier and aluminum |
| US20090085156A1 (en) | 2007-09-28 | 2009-04-02 | Gilbert Dewey | Metal surface treatments for uniformly growing dielectric layers |
| JP5236983B2 (ja) | 2007-09-28 | 2013-07-17 | 東京エレクトロン株式会社 | 半導体装置の製造方法、半導体装置の製造装置、制御プログラム及びプログラム記憶媒体 |
| US20090084317A1 (en) | 2007-09-28 | 2009-04-02 | Applied Materials, Inc. | Atomic layer deposition chamber and components |
| JP2009088421A (ja) | 2007-10-03 | 2009-04-23 | Renesas Technology Corp | 半導体装置の製造方法 |
| US8041450B2 (en) | 2007-10-04 | 2011-10-18 | Asm Japan K.K. | Position sensor system for substrate transfer robot |
| US7776698B2 (en) | 2007-10-05 | 2010-08-17 | Applied Materials, Inc. | Selective formation of silicon carbon epitaxial layer |
| US20090090382A1 (en) | 2007-10-05 | 2009-04-09 | Asm Japan K.K. | Method of self-cleaning of carbon-based film |
| US20090093100A1 (en) | 2007-10-09 | 2009-04-09 | Li-Qun Xia | Method for forming an air gap in multilevel interconnect structure |
| EP2215282B1 (en) | 2007-10-11 | 2016-11-30 | Valence Process Equipment, Inc. | Chemical vapor deposition reactor |
| US20090095221A1 (en) | 2007-10-16 | 2009-04-16 | Alexander Tam | Multi-gas concentric injection showerhead |
| WO2009050645A1 (en) | 2007-10-18 | 2009-04-23 | Nxp B.V. | Method of manufacturing localized semiconductor-on-insulator (soi) structures in a bulk semiconductor wafer |
| KR101399117B1 (ko) | 2007-10-19 | 2014-05-28 | 주성엔지니어링(주) | 원격 플라즈마를 이용한 기판 식각장치 및 이를 이용한기판 식각방법 |
| US7803722B2 (en) | 2007-10-22 | 2010-09-28 | Applied Materials, Inc | Methods for forming a dielectric layer within trenches |
| US8070880B2 (en) | 2007-10-22 | 2011-12-06 | Hitachi Kokusai Electric, Inc. | Substrate processing apparatus |
| US7541297B2 (en) | 2007-10-22 | 2009-06-02 | Applied Materials, Inc. | Method and system for improving dielectric film quality for void free gap fill |
| US7867923B2 (en) | 2007-10-22 | 2011-01-11 | Applied Materials, Inc. | High quality silicon oxide films by remote plasma CVD from disilane precursors |
| US7615831B2 (en) | 2007-10-26 | 2009-11-10 | International Business Machines Corporation | Structure and method for fabricating self-aligned metal contacts |
| US7939447B2 (en) | 2007-10-26 | 2011-05-10 | Asm America, Inc. | Inhibitors for selective deposition of silicon containing films |
| JP4730369B2 (ja) | 2007-10-30 | 2011-07-20 | 株式会社デンソー | ナビゲーションシステム |
| EP2910624B1 (en) | 2007-10-31 | 2016-11-23 | China Petroleum & Chemical Corporation | Passivation process for a continuous reforming apparatus during the initial reaction |
| KR101369907B1 (ko) | 2007-10-31 | 2014-03-04 | 주성엔지니어링(주) | 트랜지스터 및 그 제조 방법 |
| US7737039B2 (en) | 2007-11-01 | 2010-06-15 | Micron Technology, Inc. | Spacer process for on pitch contacts and related structures |
| JP5192214B2 (ja) | 2007-11-02 | 2013-05-08 | 東京エレクトロン株式会社 | ガス供給装置、基板処理装置および基板処理方法 |
| US7772097B2 (en) | 2007-11-05 | 2010-08-10 | Asm America, Inc. | Methods of selectively depositing silicon-containing films |
| KR20090047211A (ko) | 2007-11-07 | 2009-05-12 | 삼성전자주식회사 | 도전 패턴의 형성 방법 및 이를 이용한 반도체 소자의 제조방법 |
| US20090124131A1 (en) | 2007-11-09 | 2009-05-14 | Electronic Controls Design | Thermocouple adapter |
| US20100279512A1 (en) | 2007-11-14 | 2010-11-04 | Tokyo Electron Limited | Plasma processing apparatus and method for plasma-processing semiconductor substrate |
| US20090122458A1 (en) | 2007-11-14 | 2009-05-14 | Varian Semiconductor Epuipment Associated, Inc. | Embossed electrostatic chuck |
| CA123273S (en) | 2007-11-19 | 2010-01-27 | Silvano Breda | Shower strainer |
| CA123272S (en) | 2007-11-19 | 2010-01-27 | Silvano Breda | Shower strainer |
| US8272516B2 (en) | 2007-11-19 | 2012-09-25 | Caterpillar Inc. | Fluid filter system |
| KR101412144B1 (ko) | 2007-11-26 | 2014-06-26 | 삼성전자 주식회사 | 금속 배선의 제조 방법 및 이를 이용한 이미지 센서의 제조방법 |
| US8282735B2 (en) | 2007-11-27 | 2012-10-09 | Asm Genitech Korea Ltd. | Atomic layer deposition apparatus |
| US8021723B2 (en) | 2007-11-27 | 2011-09-20 | Asm Japan K.K. | Method of plasma treatment using amplitude-modulated RF power |
| EP2065927B1 (en) | 2007-11-27 | 2013-10-02 | Imec | Integration and manufacturing method of Cu germanide and Cu silicide as Cu capping layer |
| JP5314700B2 (ja) | 2007-11-28 | 2013-10-16 | コーニンクレッカ フィリップス エヌ ヴェ | 誘電バリア放電ランプ |
| KR20090055443A (ko) | 2007-11-28 | 2009-06-02 | 주식회사 케이씨텍 | 원자층 증착 장치 |
| US7967912B2 (en) | 2007-11-29 | 2011-06-28 | Nuflare Technology, Inc. | Manufacturing apparatus for semiconductor device and manufacturing method for semiconductor device |
| KR20090056475A (ko) | 2007-11-30 | 2009-06-03 | 삼성전자주식회사 | 플라즈마 처리장치 |
| US8060252B2 (en) | 2007-11-30 | 2011-11-15 | Novellus Systems, Inc. | High throughput method of in transit wafer position correction in system using multiple robots |
| US7651959B2 (en) | 2007-12-03 | 2010-01-26 | Asm Japan K.K. | Method for forming silazane-based dielectric film |
| JP5464843B2 (ja) | 2007-12-03 | 2014-04-09 | 株式会社半導体エネルギー研究所 | Ｓｏｉ基板の作製方法 |
| US20090139657A1 (en) | 2007-12-04 | 2009-06-04 | Applied Materials, Inc. | Etch system |
| US20100282170A1 (en) | 2007-12-06 | 2010-11-11 | Tsuyoshi Nishizawa | Vapor phase growth susceptor and vapor phase growth apparatus |
| US8440569B2 (en) | 2007-12-07 | 2013-05-14 | Cadence Design Systems, Inc. | Method of eliminating a lithography operation |
| US8047706B2 (en) | 2007-12-07 | 2011-11-01 | Asm America, Inc. | Calibration of temperature control system for semiconductor processing chamber |
| US7807566B2 (en) | 2007-12-07 | 2010-10-05 | Asm Japan K.K. | Method for forming dielectric SiOCH film having chemical stability |
| US8628616B2 (en) | 2007-12-11 | 2014-01-14 | Sumitomo Electric Industries, Ltd. | Vapor-phase process apparatus, vapor-phase process method, and substrate |
| US8003174B2 (en) | 2007-12-13 | 2011-08-23 | Asm Japan K.K. | Method for forming dielectric film using siloxane-silazane mixture |
| KR100956247B1 (ko) | 2007-12-13 | 2010-05-06 | 삼성엘이디 주식회사 | 금속유기 화학기상 증착장치 |
| US20100259152A1 (en) | 2007-12-17 | 2010-10-14 | Orc Manufacturing Co., Ltd. | Discharge lamp |
| FI123322B (fi) | 2007-12-17 | 2013-02-28 | Beneq Oy | Menetelmä ja laitteisto plasman muodostamiseksi |
| US20090155488A1 (en) | 2007-12-18 | 2009-06-18 | Asm Japan K.K. | Shower plate electrode for plasma cvd reactor |
| US8092606B2 (en) | 2007-12-18 | 2012-01-10 | Asm Genitech Korea Ltd. | Deposition apparatus |
| US20090159002A1 (en) | 2007-12-19 | 2009-06-25 | Kallol Bera | Gas distribution plate with annular plenum having a sloped ceiling for uniform distribution |
| US7998875B2 (en) | 2007-12-19 | 2011-08-16 | Lam Research Corporation | Vapor phase repair and pore sealing of low-K dielectric materials |
| US8137463B2 (en) | 2007-12-19 | 2012-03-20 | Applied Materials, Inc. | Dual zone gas injection nozzle |
| US7993057B2 (en) | 2007-12-20 | 2011-08-09 | Asm America, Inc. | Redundant temperature sensor for semiconductor processing chambers |
| US7989329B2 (en) | 2007-12-21 | 2011-08-02 | Applied Materials, Inc. | Removal of surface dopants from a substrate |
| KR101573954B1 (ko) | 2007-12-21 | 2015-12-02 | 램 리써치 코포레이션 | 포토레지스트 더블 패터닝 |
| JP3140111U (ja) | 2007-12-21 | 2008-03-13 | 日本エー・エス・エム株式会社 | 半導体製造装置用ガス供給装置 |
| US7678715B2 (en) | 2007-12-21 | 2010-03-16 | Applied Materials, Inc. | Low wet etch rate silicon nitride film |
| US8501637B2 (en) | 2007-12-21 | 2013-08-06 | Asm International N.V. | Silicon dioxide thin films by ALD |
| US8129029B2 (en) | 2007-12-21 | 2012-03-06 | Applied Materials, Inc. | Erosion-resistant plasma chamber components comprising a metal base structure with an overlying thermal oxidation coating |
| US20090197015A1 (en) | 2007-12-25 | 2009-08-06 | Applied Materials, Inc. | Method and apparatus for controlling plasma uniformity |
| JP5291928B2 (ja) | 2007-12-26 | 2013-09-18 | 株式会社日立製作所 | 酸化物半導体装置およびその製造方法 |
| KR101444873B1 (ko) | 2007-12-26 | 2014-09-26 | 주성엔지니어링(주) | 기판처리장치 |
| US8333839B2 (en) | 2007-12-27 | 2012-12-18 | Synos Technology, Inc. | Vapor deposition reactor |
| US20090165721A1 (en) | 2007-12-27 | 2009-07-02 | Memc Electronic Materials, Inc. | Susceptor with Support Bosses |
| KR100936694B1 (ko) | 2007-12-27 | 2010-01-13 | 주식회사 케이씨텍 | 플라즈마 발생부를 구비하는 원자층 증착 장치 |
| JP5409649B2 (ja) | 2007-12-27 | 2014-02-05 | ラム リサーチ コーポレーション | 位置およびオフセットを決定するためのシステムおよび方法 |
| JP5374039B2 (ja) | 2007-12-27 | 2013-12-25 | 東京エレクトロン株式会社 | 基板処理方法、基板処理装置及び記憶媒体 |
| US8496377B2 (en) | 2007-12-31 | 2013-07-30 | Covidien Lp | Thermometer having molded probe component |
| KR101013413B1 (ko) | 2008-01-07 | 2011-02-14 | 한국과학기술연구원 | 플라즈마 표면 처리를 이용한 투명 기체 차단 필름의 제조방법 및 이로부터 제조된 투명 기체 차단 필름 |
| US7935940B1 (en) | 2008-01-08 | 2011-05-03 | Novellus Systems, Inc. | Measuring in-situ UV intensity in UV cure tool |
| US20090176018A1 (en) | 2008-01-09 | 2009-07-09 | Min Zou | Nano/micro-textured surfaces and methods of making same by aluminum-induced crystallization of amorphous silicon |
| US8129288B2 (en) | 2008-05-02 | 2012-03-06 | Intermolecular, Inc. | Combinatorial plasma enhanced deposition techniques |
| US8198567B2 (en) | 2008-01-15 | 2012-06-12 | Applied Materials, Inc. | High temperature vacuum chuck assembly |
| JP5548841B2 (ja) | 2008-01-16 | 2014-07-16 | チャーム エンジニアリング シーオー エルティーディー | 基板処理装置 |
| JP5200551B2 (ja) | 2008-01-18 | 2013-06-05 | 東京エレクトロン株式会社 | 気化原料供給装置、成膜装置及び気化原料供給方法 |
| US20090186571A1 (en) | 2008-01-22 | 2009-07-23 | Asm America, Inc. | Air ventilation system |
| CN101911253B (zh) | 2008-01-31 | 2012-08-22 | 应用材料公司 | 闭环mocvd沉积控制 |
| WO2009095898A1 (en) | 2008-02-01 | 2009-08-06 | L'air Liquide-Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude | New metal precursors containing beta-diketiminato ligands |
| US7855153B2 (en) | 2008-02-08 | 2010-12-21 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
| US20090203197A1 (en) | 2008-02-08 | 2009-08-13 | Hiroji Hanawa | Novel method for conformal plasma immersed ion implantation assisted by atomic layer deposition |
| KR100988390B1 (ko) | 2008-02-11 | 2010-10-18 | 성균관대학교산학협력단 | 기판처리장치 및 기판처리방법 |
| KR101362811B1 (ko) | 2008-02-11 | 2014-02-14 | (주)소슬 | 배치식 기판 지지 장치 및 이를 구비하는 기판 처리 장치 |
| US20090200494A1 (en) | 2008-02-11 | 2009-08-13 | Varian Semiconductor Equipment Associates, Inc. | Techniques for cold implantation of carbon-containing species |
| KR101043211B1 (ko) | 2008-02-12 | 2011-06-22 | 신웅철 | 배치형 원자층 증착 장치 |
| GB0802486D0 (en) | 2008-02-12 | 2008-03-19 | Gilbert Patrick C | Warm water economy device |
| US7795045B2 (en) | 2008-02-13 | 2010-09-14 | Icemos Technology Ltd. | Trench depth monitor for semiconductor manufacturing |
| US20090206056A1 (en) | 2008-02-14 | 2009-08-20 | Songlin Xu | Method and Apparatus for Plasma Process Performance Matching in Multiple Wafer Chambers |
| JP2009194248A (ja) | 2008-02-15 | 2009-08-27 | Tokyo Electron Ltd | パターン形成方法、半導体製造装置及び記憶媒体 |
| WO2009104732A1 (ja) | 2008-02-20 | 2009-08-27 | 東京エレクトロン株式会社 | ガス供給装置 |
| US20090214777A1 (en) | 2008-02-22 | 2009-08-27 | Demetrius Sarigiannis | Multiple ampoule delivery systems |
| US20090214825A1 (en) | 2008-02-26 | 2009-08-27 | Applied Materials, Inc. | Ceramic coating comprising yttrium which is resistant to a reducing plasma |
| WO2009107718A1 (ja) | 2008-02-27 | 2009-09-03 | 東京エレクトロン株式会社 | プラズマエッチング処理装置およびプラズマエッチング処理方法 |
| US8273178B2 (en) | 2008-02-28 | 2012-09-25 | Asm Genitech Korea Ltd. | Thin film deposition apparatus and method of maintaining the same |
| US20090221149A1 (en) | 2008-02-28 | 2009-09-03 | Hammond Iv Edward P | Multiple port gas injection system utilized in a semiconductor processing system |
| JP5223377B2 (ja) | 2008-02-29 | 2013-06-26 | 東京エレクトロン株式会社 | プラズマ処理装置用の電極、プラズマ処理装置及びプラズマ処理方法 |
| US20090302002A1 (en) | 2008-02-29 | 2009-12-10 | Applied Materials, Inc. | Method and apparatus for removing polymer from a substrate |
| KR100968132B1 (ko) | 2008-02-29 | 2010-07-06 | (주)얼라이드 테크 파인더즈 | 안테나 및 이를 구비한 반도체 장치 |
| US7727866B2 (en) | 2008-03-05 | 2010-06-01 | Varian Semiconductor Equipment Associates, Inc. | Use of chained implants in solar cells |
| USD585968S1 (en) | 2008-03-06 | 2009-02-03 | West Coast Washers, Inc. | Pipe flashing |
| US7858533B2 (en) | 2008-03-06 | 2010-12-28 | Tokyo Electron Limited | Method for curing a porous low dielectric constant dielectric film |
| US7977256B2 (en) | 2008-03-06 | 2011-07-12 | Tokyo Electron Limited | Method for removing a pore-generating material from an uncured low-k dielectric film |
| EP2099067A1 (en) | 2008-03-07 | 2009-09-09 | Nederlandse Organisatie voor toegepast- natuurwetenschappelijk onderzoek TNO | Process for adjusting the friction coefficient between surfaces of two solid objects |
| JP5507097B2 (ja) | 2008-03-12 | 2014-05-28 | 富士フイルム株式会社 | ペロブスカイト型酸化物とその製造方法、圧電体、圧電素子、液体吐出装置 |
| JP5188849B2 (ja) | 2008-03-14 | 2013-04-24 | Ｓｐｐテクノロジーズ株式会社 | プラズマ処理装置 |
| GB2458507A (en) | 2008-03-20 | 2009-09-23 | Tecvac Ltd | Oxidation of non ferrous metal components |
| CN101978475B (zh) | 2008-03-21 | 2013-09-25 | 应用材料公司 | 屏蔽性盖加热器组件 |
| US7695619B2 (en) | 2008-03-21 | 2010-04-13 | Pentair Filtration, Inc. | Modular drinking water filtration system with adapter rings for replaceable cartridges to assure proper fit |
| US8430620B1 (en) | 2008-03-24 | 2013-04-30 | Novellus Systems, Inc. | Dedicated hot and cold end effectors for improved throughput |
| GB0805328D0 (en) | 2008-03-25 | 2008-04-30 | Aviza Technologies Ltd | Deposition of an amorphous layer |
| JP2009239082A (ja) | 2008-03-27 | 2009-10-15 | Tokyo Electron Ltd | ガス供給装置、処理装置及び処理方法 |
| US20090246399A1 (en) | 2008-03-28 | 2009-10-01 | Asm Japan K.K. | Method for activating reactive oxygen species for cleaning carbon-based film deposition |
| US8252114B2 (en) | 2008-03-28 | 2012-08-28 | Tokyo Electron Limited | Gas distribution system and method for distributing process gas in a processing system |
| US7816278B2 (en) | 2008-03-28 | 2010-10-19 | Tokyo Electron Limited | In-situ hybrid deposition of high dielectric constant films using atomic layer deposition and chemical vapor deposition |
| US20100078601A1 (en) | 2008-03-31 | 2010-04-01 | American Air Liquide, Inc. | Preparation of Lanthanide-Containing Precursors and Deposition of Lanthanide-Containing Films |
| USD590933S1 (en) | 2008-03-31 | 2009-04-21 | Mcp Industries, Inc. | Vent cap device |
| US7659158B2 (en) | 2008-03-31 | 2010-02-09 | Applied Materials, Inc. | Atomic layer deposition processes for non-volatile memory devices |
| JP2009252851A (ja) | 2008-04-02 | 2009-10-29 | Nikon Corp | 露光装置及びデバイス製造方法 |
| US7963736B2 (en) | 2008-04-03 | 2011-06-21 | Asm Japan K.K. | Wafer processing apparatus with wafer alignment device |
| WO2009122751A1 (ja) | 2008-04-04 | 2009-10-08 | ダイセル化学工業株式会社 | フォトレジスト用ポリオール化合物 |
| JP5007827B2 (ja) | 2008-04-04 | 2012-08-22 | 信越化学工業株式会社 | ダブルパターン形成方法 |
| US20090250955A1 (en) | 2008-04-07 | 2009-10-08 | Applied Materials, Inc. | Wafer transfer blade |
| US8193388B2 (en) | 2008-04-15 | 2012-06-05 | American Air Liquide, Inc. | Compounds for depositing tellurium-containing films |
| KR101540077B1 (ko) | 2008-04-16 | 2015-07-28 | 에이에스엠 아메리카, 인코포레이티드 | 알루미늄 탄화수소 화합물들을 이용한 금속 카바이드 막들의 원자층 증착법 |
| WO2009129391A2 (en) | 2008-04-17 | 2009-10-22 | Applied Materials, Inc. | Low temperature thin film transistor process, device property, and device stability improvement |
| KR100971414B1 (ko) | 2008-04-18 | 2010-07-21 | 주식회사 하이닉스반도체 | 스트레인드 채널을 갖는 반도체 소자 및 그 제조방법 |
| US8741062B2 (en) | 2008-04-22 | 2014-06-03 | Picosun Oy | Apparatus and methods for deposition reactors |
| WO2009131902A2 (en) | 2008-04-23 | 2009-10-29 | Intermolecular, Inc. | Yttrium and titanium high-k dielectric films |
| US20090269506A1 (en) | 2008-04-24 | 2009-10-29 | Seiji Okura | Method and apparatus for cleaning of a CVD reactor |
| CN102067281B (zh) | 2008-04-25 | 2013-06-12 | 株式会社半导体能源研究所 | 半导体器件及其制造方法 |
| US8383525B2 (en) | 2008-04-25 | 2013-02-26 | Asm America, Inc. | Plasma-enhanced deposition process for forming a metal oxide thin film and related structures |
| JP5253875B2 (ja) | 2008-04-28 | 2013-07-31 | 株式会社東芝 | 不揮発性半導体記憶装置、及びその製造方法 |
| RU2010148303A (ru) | 2008-04-28 | 2012-06-10 | Басф Се (De) | Low-к диэлектрики, получаемые методом twin-полимеризации |
| US20090269507A1 (en) | 2008-04-29 | 2009-10-29 | Sang-Ho Yu | Selective cobalt deposition on copper surfaces |
| US8252194B2 (en) | 2008-05-02 | 2012-08-28 | Micron Technology, Inc. | Methods of removing silicon oxide |
| US7632549B2 (en) | 2008-05-05 | 2009-12-15 | Asm Japan K.K. | Method of forming a high transparent carbon film |
| FR2930900B1 (fr) | 2008-05-06 | 2010-09-10 | Commissariat Energie Atomique | Dispositif de separation de biomolecules d'un fluide |
| US20090280248A1 (en) | 2008-05-06 | 2009-11-12 | Asm America, Inc. | Porous substrate holder with thinned portions |
| US20090277874A1 (en) | 2008-05-09 | 2009-11-12 | Applied Materials, Inc. | Method and apparatus for removing polymer from a substrate |
| US8076237B2 (en) | 2008-05-09 | 2011-12-13 | Asm America, Inc. | Method and apparatus for 3D interconnect |
| US20090286402A1 (en) | 2008-05-13 | 2009-11-19 | Applied Materials, Inc | Method for critical dimension shrink using conformal pecvd films |
| US8277670B2 (en) | 2008-05-13 | 2012-10-02 | Lam Research Corporation | Plasma process with photoresist mask pretreatment |
| WO2009140371A2 (en) | 2008-05-14 | 2009-11-19 | Applied Materials, Inc. | Method and apparatus for pulsed plasma processing using a time resolved tuning scheme for rf power delivery |
| US8333842B2 (en) | 2008-05-15 | 2012-12-18 | Applied Materials, Inc. | Apparatus for etching semiconductor wafers |
| TWI475594B (zh) | 2008-05-19 | 2015-03-01 | Entegris Inc | 靜電夾頭 |
| US7514058B1 (en) | 2008-05-22 | 2009-04-07 | The Lata Group, Inc. | Apparatus for on-site production of nitrate ions |
| US10041169B2 (en) | 2008-05-27 | 2018-08-07 | Picosun Oy | System and method for loading a substrate holder carrying a batch of vertically placed substrates into an atomic layer deposition reactor |
| EP2128299B1 (en) | 2008-05-29 | 2016-12-28 | General Electric Technology GmbH | Multilayer thermal barrier coating |
| US8945675B2 (en) | 2008-05-29 | 2015-02-03 | Asm International N.V. | Methods for forming conductive titanium oxide thin films |
| US20090297731A1 (en) | 2008-05-30 | 2009-12-03 | Asm Japan K.K. | Apparatus and method for improving production throughput in cvd chamber |
| US7622369B1 (en) | 2008-05-30 | 2009-11-24 | Asm Japan K.K. | Device isolation technology on semiconductor substrate |
| US8298628B2 (en) | 2008-06-02 | 2012-10-30 | Air Products And Chemicals, Inc. | Low temperature deposition of silicon-containing films |
| US20110056513A1 (en) | 2008-06-05 | 2011-03-10 | Axel Hombach | Method for treating surfaces, lamp for said method, and irradiation system having said lamp |
| US8283201B2 (en) | 2008-06-05 | 2012-10-09 | American Air Liquide, Inc. | Preparation of lanthanide-containing precursors and deposition of lanthanide-containing films |
| JP2009295932A (ja) | 2008-06-09 | 2009-12-17 | Canon Inc | 露光装置及びデバイス製造方法 |
| JP5421551B2 (ja) | 2008-06-11 | 2014-02-19 | 東京エレクトロン株式会社 | プラズマ処理装置及びプラズマ処理方法 |
| US7915667B2 (en) | 2008-06-11 | 2011-03-29 | Qimonda Ag | Integrated circuits having a contact region and methods for manufacturing the same |
| US20090308315A1 (en) | 2008-06-13 | 2009-12-17 | Asm International N.V. | Semiconductor processing apparatus with improved thermal characteristics and method for providing the same |
| US7946762B2 (en) | 2008-06-17 | 2011-05-24 | Asm America, Inc. | Thermocouple |
| US7699935B2 (en) | 2008-06-19 | 2010-04-20 | Applied Materials, Inc. | Method and system for supplying a cleaning gas into a process chamber |
| CN101609858B (zh) | 2008-06-20 | 2011-06-22 | 福建钧石能源有限公司 | 薄膜沉积方法 |
| KR20110031466A (ko) | 2008-06-20 | 2011-03-28 | 어플라이드 머티어리얼스, 인코포레이티드 | 가스 분배 샤워헤드 스커트 |
| US8726837B2 (en) | 2008-06-23 | 2014-05-20 | Applied Materials, Inc. | Semiconductor process chamber vision and monitoring system |
| US8827695B2 (en) | 2008-06-23 | 2014-09-09 | Taiwan Semiconductor Manufacturing Company, Ltd. | Wafer's ambiance control |
| CN102077338A (zh) | 2008-06-24 | 2011-05-25 | 应用材料股份有限公司 | 用于低温pecvd应用的基座加热器 |
| KR101036605B1 (ko) | 2008-06-30 | 2011-05-24 | 세메스 주식회사 | 기판 지지 유닛 및 이를 이용한 매엽식 기판 연마 장치 |
| US20090325391A1 (en) | 2008-06-30 | 2009-12-31 | Asm International Nv | Ozone and teos process for silicon oxide deposition |
| US8291857B2 (en) | 2008-07-03 | 2012-10-23 | Applied Materials, Inc. | Apparatuses and methods for atomic layer deposition |
| US8206506B2 (en) | 2008-07-07 | 2012-06-26 | Lam Research Corporation | Showerhead electrode |
| US8702867B2 (en) | 2008-07-08 | 2014-04-22 | Jusung Engineering Co., Ltd. | Gas distribution plate and substrate treating apparatus including the same |
| JP2010021204A (ja) | 2008-07-08 | 2010-01-28 | Toshiba Corp | 半導体装置及びその製造方法 |
| US8800484B2 (en) | 2008-07-09 | 2014-08-12 | Tokyo Electron Limited | Plasma processing apparatus |
| US20100012036A1 (en) | 2008-07-11 | 2010-01-21 | Hugo Silva | Isolation for multi-single-wafer processing apparatus |
| US8111978B2 (en) | 2008-07-11 | 2012-02-07 | Applied Materials, Inc. | Rapid thermal processing chamber with shower head |
| US8058138B2 (en) | 2008-07-17 | 2011-11-15 | Micron Technology, Inc. | Gap processing |
| US9997325B2 (en) | 2008-07-17 | 2018-06-12 | Verity Instruments, Inc. | Electron beam exciter for use in chemical analysis in processing systems |
| USD614593S1 (en) | 2008-07-21 | 2010-04-27 | Asm Genitech Korea Ltd | Substrate support for a semiconductor deposition apparatus |
| TWD136587S1 (zh) | 2008-07-22 | 2010-08-21 | 東京威力科創股份有限公司 | 晶圓吸附板 |
| WO2010017136A1 (en) | 2008-08-04 | 2010-02-11 | Amir Dassoud Dabiran | Microchannel plate photocathode |
| KR101482944B1 (ko) | 2008-08-04 | 2015-01-16 | 한국과학기술원 | 산화티타늄을 활성층으로 갖는 박막 트랜지스터의 제조방법 및 이에 의해 제조된 박막 트랜지스터 |
| KR20100015213A (ko) | 2008-08-04 | 2010-02-12 | 삼성전기주식회사 | Ｃｖｄ용 샤워 헤드 및 이를 구비하는 화학 기상 증착 장치 |
| US8047711B2 (en) | 2008-08-06 | 2011-11-01 | Heinz Ploechinger | Thermocouple vacuum gauge |
| US20100034719A1 (en) | 2008-08-06 | 2010-02-11 | Christian Dussarrat | Novel lanthanide beta-diketonate precursors for lanthanide thin film deposition |
| US8394229B2 (en) | 2008-08-07 | 2013-03-12 | Asm America, Inc. | Susceptor ring |
| US8328585B2 (en) | 2008-08-07 | 2012-12-11 | Texas Instruments Incorporated | Modulated deposition process for stress control in thick TiN films |
| USD600223S1 (en) | 2008-08-07 | 2009-09-15 | Ravinder Aggarwal | Susceptor ring |
| WO2010017555A1 (en) | 2008-08-08 | 2010-02-11 | Cornell Research Foundation, Inc. | Inorganic bulk multijunction materials and processes for preparing the same |
| US8129555B2 (en) | 2008-08-12 | 2012-03-06 | Air Products And Chemicals, Inc. | Precursors for depositing silicon-containing films and methods for making and using same |
| KR101017170B1 (ko) | 2008-08-13 | 2011-02-25 | 주식회사 동부하이텍 | 백 메탈 공정챔버 |
| JP5338335B2 (ja) | 2008-08-13 | 2013-11-13 | 東京エレクトロン株式会社 | 搬送容器の開閉装置及びプローブ装置 |
| US8263502B2 (en) | 2008-08-13 | 2012-09-11 | Synos Technology, Inc. | Forming substrate structure by filling recesses with deposition material |
| US8470718B2 (en) | 2008-08-13 | 2013-06-25 | Synos Technology, Inc. | Vapor deposition reactor for forming thin film |
| US7816218B2 (en) | 2008-08-14 | 2010-10-19 | Intel Corporation | Selective deposition of amorphous silicon films on metal gates |
| US8147648B2 (en) | 2008-08-15 | 2012-04-03 | Lam Research Corporation | Composite showerhead electrode assembly for a plasma processing apparatus |
| JP4866402B2 (ja) | 2008-08-25 | 2012-02-01 | 独立行政法人科学技術振興機構 | 化学蒸着方法 |
| JP5593472B2 (ja) | 2008-08-27 | 2014-09-24 | 株式会社日立国際電気 | 基板処理装置および半導体デバイスの製造方法 |
| JP5188326B2 (ja) | 2008-08-28 | 2013-04-24 | 株式会社日立国際電気 | 半導体装置の製造方法、基板処理方法、及び基板処理装置 |
| US8084104B2 (en) | 2008-08-29 | 2011-12-27 | Asm Japan K.K. | Atomic composition controlled ruthenium alloy film formed by plasma-enhanced atomic layer deposition |
| TWI397113B (zh) | 2008-08-29 | 2013-05-21 | Veeco Instr Inc | 具有可變熱阻之晶圓載體 |
| US20100055442A1 (en) | 2008-09-03 | 2010-03-04 | International Business Machines Corporation | METHOD OF PE-ALD OF SiNxCy AND INTEGRATION OF LINER MATERIALS ON POROUS LOW K SUBSTRATES |
| JP5107185B2 (ja) | 2008-09-04 | 2012-12-26 | 東京エレクトロン株式会社 | 成膜装置、基板処理装置、成膜方法及びこの成膜方法を実行させるためのプログラムを記録した記録媒体 |
| TW201011861A (en) | 2008-09-04 | 2010-03-16 | Nanya Technology Corp | Method for fabricating integrated circuit |
| JP2010087467A (ja) | 2008-09-04 | 2010-04-15 | Tokyo Electron Ltd | 成膜装置、基板処理装置、成膜方法及びこの成膜方法を実行させるためのプログラムを記録した記録媒体 |
| JP5276388B2 (ja) | 2008-09-04 | 2013-08-28 | 東京エレクトロン株式会社 | 成膜装置及び基板処理装置 |
| DE112009002156T5 (de) | 2008-09-08 | 2012-01-12 | Shibaura Mechatronics Corp. | Substrathalteelement, Substratverarbeitungsvorrichtung und Substratverarbeitungsverfahren |
| JP5226438B2 (ja) | 2008-09-10 | 2013-07-03 | 株式会社日立国際電気 | 基板処理装置、半導体装置の製造方法及び基板処理方法 |
| USD643055S1 (en) | 2008-09-11 | 2011-08-09 | Asm Japan K.K. | Heater block for use in a semiconductor processing tool |
| JP5511273B2 (ja) | 2008-09-12 | 2014-06-04 | 株式会社日立国際電気 | 基板処理装置及び基板処理方法 |
| US8731706B2 (en) | 2008-09-12 | 2014-05-20 | Hitachi High-Technologies Corporation | Vacuum processing apparatus |
| US20100065758A1 (en) | 2008-09-16 | 2010-03-18 | Tokyo Electron Limited | Dielectric material treatment system and method of operating |
| JP2010073822A (ja) | 2008-09-17 | 2010-04-02 | Tokyo Electron Ltd | 成膜装置、成膜方法、プログラム及びコンピュータ可読記憶媒体 |
| US20100075488A1 (en) | 2008-09-19 | 2010-03-25 | Applied Materials, Inc. | Cvd reactor with multiple processing levels and dual-axis motorized lift mechanism |
| US20100075037A1 (en) | 2008-09-22 | 2010-03-25 | Marsh Eugene P | Deposition Systems, ALD Systems, CVD Systems, Deposition Methods, ALD Methods and CVD Methods |
| US9711373B2 (en) | 2008-09-22 | 2017-07-18 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method of fabricating a gate dielectric for high-k metal gate devices |
| JP2010077508A (ja) | 2008-09-26 | 2010-04-08 | Tokyo Electron Ltd | 成膜装置及び基板処理装置 |
| JP4638550B2 (ja) | 2008-09-29 | 2011-02-23 | 東京エレクトロン株式会社 | マスクパターンの形成方法、微細パターンの形成方法及び成膜装置 |
| DE102008049353A1 (de) | 2008-09-29 | 2010-04-08 | Vat Holding Ag | Vakuumventil |
| US9493875B2 (en) | 2008-09-30 | 2016-11-15 | Eugene Technology Co., Ltd. | Shower head unit and chemical vapor deposition apparatus |
| KR20100037212A (ko) | 2008-10-01 | 2010-04-09 | 주식회사 동부하이텍 | 반도체 소자 및 그 제조 방법 |
| US20100090149A1 (en) | 2008-10-01 | 2010-04-15 | Compressor Engineering Corp. | Poppet valve assembly, system, and apparatus for use in high speed compressor applications |
| US20100081293A1 (en) | 2008-10-01 | 2010-04-01 | Applied Materials, Inc. | Methods for forming silicon nitride based film or silicon carbon based film |
| TWD135511S1 (zh) | 2008-10-03 | 2010-06-21 | 日本碍子股份有限公司 | 靜電夾頭 |
| KR20110079831A (ko) | 2008-10-03 | 2011-07-08 | 비코 프로세스 이큅먼트, 아이엔씨. | 기상 에피택시 시스템 |
| WO2010042410A2 (en) | 2008-10-07 | 2010-04-15 | Applied Materials, Inc. | Apparatus for efficient removal of halogen residues from etched substrates |
| JP2010114420A (ja) | 2008-10-07 | 2010-05-20 | Hitachi Kokusai Electric Inc | 半導体デバイスの製造方法 |
| ATE535534T1 (de) | 2008-10-07 | 2011-12-15 | Air Liquide | Metall-organische niobium- und vanadium-vorläufer zur dünnschichtablagerung |
| KR101491726B1 (ko) | 2008-10-08 | 2015-02-17 | 주성엔지니어링(주) | 반도체 소자의 갭필 방법 |
| WO2010041213A1 (en) | 2008-10-08 | 2010-04-15 | Abcd Technology Sarl | Vapor phase deposition system |
| KR101627297B1 (ko) | 2008-10-13 | 2016-06-03 | 한국에이에스엠지니텍 주식회사 | 플라즈마 처리부 및 이를 포함하는 증착 장치 및 증착 방법 |
| US8133555B2 (en) | 2008-10-14 | 2012-03-13 | Asm Japan K.K. | Method for forming metal film by ALD using beta-diketone metal complex |
| WO2010045153A2 (en) | 2008-10-14 | 2010-04-22 | Applied Materials, Inc. | Method for depositing conformal amorphous carbon film by plasma-enhanced chemical vapor deposition (pecvd) |
| KR20100041529A (ko) | 2008-10-14 | 2010-04-22 | 삼성전자주식회사 | 초임계 유체를 이용한 물질막 증착장치, 이를 포함하는 물질막 증착 시스템 및 물질막 형성방법 |
| WO2010044978A1 (en) | 2008-10-15 | 2010-04-22 | Arizona Board of Regents, a body corporate acting for and on behalf of Arizona State University | Hybrid group iv/iii-v semiconductor structures |
| JP2010097834A (ja) | 2008-10-17 | 2010-04-30 | Ushio Inc | バックライトユニット |
| US7745346B2 (en) | 2008-10-17 | 2010-06-29 | Novellus Systems, Inc. | Method for improving process control and film conformality of PECVD film |
| US7964858B2 (en) | 2008-10-21 | 2011-06-21 | Applied Materials, Inc. | Ultraviolet reflector with coolant gas holes and method |
| US8697189B2 (en) | 2008-10-21 | 2014-04-15 | Intevac, Inc. | Method and apparatus for precision surface modification in nano-imprint lithography |
| US8114734B2 (en) | 2008-10-21 | 2012-02-14 | United Microelectronics Corp. | Metal capacitor and method of making the same |
| US7967913B2 (en) | 2008-10-22 | 2011-06-28 | Applied Materials, Inc. | Remote plasma clean process with cycled high and low pressure clean steps |
| US20100102417A1 (en) | 2008-10-27 | 2010-04-29 | Applied Materials, Inc. | Vapor deposition method for ternary compounds |
| US8185443B2 (en) | 2008-10-27 | 2012-05-22 | Ebay, Inc. | Method and apparatus for authorizing a payment via a remote device |
| KR101714660B1 (ko) | 2008-11-07 | 2017-03-22 | 에이에스엠 아메리카, 인코포레이티드 | 반응 챔버 |
| JP5410074B2 (ja) | 2008-11-07 | 2014-02-05 | 東京エレクトロン株式会社 | オゾンガス濃度測定方法、オゾンガス濃度測定システム及び基板処理装置 |
| JP5062143B2 (ja) | 2008-11-10 | 2012-10-31 | 東京エレクトロン株式会社 | 成膜装置 |
| US8524616B2 (en) | 2008-11-12 | 2013-09-03 | Microchip Technology Incorporated | Method of nonstoichiometric CVD dielectric film surface passivation for film roughness control |
| US9017765B2 (en) | 2008-11-12 | 2015-04-28 | Applied Materials, Inc. | Protective coatings resistant to reactive plasma processing |
| US20100121100A1 (en) | 2008-11-12 | 2010-05-13 | Daniel Travis Shay | Supported palladium-gold catalysts and preparation of vinyl acetate therewith |
| US8858745B2 (en) | 2008-11-12 | 2014-10-14 | Applied Materials, Inc. | Corrosion-resistant bonding agents for bonding ceramic components which are exposed to plasmas |
| US20100116208A1 (en) | 2008-11-13 | 2010-05-13 | Applied Materials, Inc. | Ampoule and delivery system for solid precursors |
| US10378106B2 (en) | 2008-11-14 | 2019-08-13 | Asm Ip Holding B.V. | Method of forming insulation film by modified PEALD |
| US8647722B2 (en) | 2008-11-14 | 2014-02-11 | Asm Japan K.K. | Method of forming insulation film using plasma treatment cycles |
| JP2010153769A (ja) | 2008-11-19 | 2010-07-08 | Tokyo Electron Ltd | 基板位置検出装置、基板位置検出方法、成膜装置、成膜方法、プログラム及びコンピュータ可読記憶媒体 |
| JP5225041B2 (ja) | 2008-11-21 | 2013-07-03 | 京セラ株式会社 | 静電チャック |
| US20100130017A1 (en) | 2008-11-21 | 2010-05-27 | Axcelis Technologies, Inc. | Front end of line plasma mediated ashing processes and apparatus |
| US8714169B2 (en) | 2008-11-26 | 2014-05-06 | Semes Co. Ltd. | Spin head, apparatus for treating substrate, and method for treating substrate |
| KR101004434B1 (ko) | 2008-11-26 | 2010-12-28 | 세메스 주식회사 | 기판 지지 유닛과, 이를 이용한 기판 연마 장치 및 방법 |
| JP5185790B2 (ja) | 2008-11-27 | 2013-04-17 | 株式会社日立ハイテクノロジーズ | プラズマ処理装置 |
| US8138676B2 (en) | 2008-12-01 | 2012-03-20 | Mills Robert L | Methods and systems for dimmable fluorescent lighting using multiple frequencies |
| US9714465B2 (en) | 2008-12-01 | 2017-07-25 | Applied Materials, Inc. | Gas distribution blocker apparatus |
| US8252659B2 (en) | 2008-12-02 | 2012-08-28 | Imec | Method for producing interconnect structures for integrated circuits |
| US8273634B2 (en) | 2008-12-04 | 2012-09-25 | Micron Technology, Inc. | Methods of fabricating substrates |
| US8262287B2 (en) | 2008-12-08 | 2012-09-11 | Asm America, Inc. | Thermocouple |
| US8765233B2 (en) | 2008-12-09 | 2014-07-01 | Asm Japan K.K. | Method for forming low-carbon CVD film for filling trenches |
| JP5390846B2 (ja) | 2008-12-09 | 2014-01-15 | 東京エレクトロン株式会社 | プラズマエッチング装置及びプラズマクリーニング方法 |
| JP5356005B2 (ja) | 2008-12-10 | 2013-12-04 | 株式会社東芝 | 不揮発性半導体記憶装置及びその製造方法 |
| US8033771B1 (en) | 2008-12-11 | 2011-10-11 | Novellus Systems, Inc. | Minimum contact area wafer clamping with gas flow for rapid wafer cooling |
| US7902009B2 (en) | 2008-12-11 | 2011-03-08 | Intel Corporation | Graded high germanium compound films for strained semiconductor devices |
| US20100151206A1 (en) | 2008-12-11 | 2010-06-17 | Air Products And Chemicals, Inc. | Method for Removal of Carbon From An Organosilicate Material |
| US8557712B1 (en) | 2008-12-15 | 2013-10-15 | Novellus Systems, Inc. | PECVD flowable dielectric gap fill |
| CN102246268A (zh) | 2008-12-15 | 2011-11-16 | 东京毅力科创株式会社 | 基板处理系统、基板处理方法以及存储了程序的存储介质 |
| US20100147396A1 (en) | 2008-12-15 | 2010-06-17 | Asm Japan K.K. | Multiple-Substrate Transfer Apparatus and Multiple-Substrate Processing Apparatus |
| US9379011B2 (en) | 2008-12-19 | 2016-06-28 | Asm International N.V. | Methods for depositing nickel films and for making nickel silicide and nickel germanide |
| GB2481144B (en) | 2008-12-23 | 2014-06-18 | Mks Instr Inc | Reactive chemical containment system |
| KR20100075070A (ko) | 2008-12-24 | 2010-07-02 | 삼성전자주식회사 | 비휘발성 메모리 장치의 제조 방법 |
| JP2010157536A (ja) | 2008-12-26 | 2010-07-15 | Nuflare Technology Inc | サセプタの製造方法 |
| JP5268626B2 (ja) | 2008-12-26 | 2013-08-21 | 株式会社日立ハイテクノロジーズ | プラズマ処理装置 |
| US8816424B2 (en) | 2008-12-26 | 2014-08-26 | SK Hynix Inc. | Nonvolatile memory device |
| KR20100077442A (ko) | 2008-12-29 | 2010-07-08 | 주식회사 케이씨텍 | 샤워헤드 및 이를 구비하는 원자층 증착장치 |
| JP5295095B2 (ja) | 2008-12-29 | 2013-09-18 | ケー．シー．テック カンパニー リミテッド | 原子層蒸着装置 |
| KR101111063B1 (ko) | 2008-12-31 | 2012-02-16 | 엘아이지에이디피 주식회사 | 기판합착장치 |
| US7964490B2 (en) | 2008-12-31 | 2011-06-21 | Intel Corporation | Methods of forming nickel sulfide film on a semiconductor device |
| US20100183825A1 (en) | 2008-12-31 | 2010-07-22 | Cambridge Nanotech Inc. | Plasma atomic layer deposition system and method |
| US9640396B2 (en) | 2009-01-07 | 2017-05-02 | Brewer Science Inc. | Spin-on spacer materials for double- and triple-patterning lithography |
| US8216380B2 (en) | 2009-01-08 | 2012-07-10 | Asm America, Inc. | Gap maintenance for opening to process chamber |
| US20100176513A1 (en) | 2009-01-09 | 2010-07-15 | International Business Machines Corporation | Structure and method of forming metal interconnect structures in ultra low-k dielectrics |
| US20100178137A1 (en) | 2009-01-11 | 2010-07-15 | Applied Materials, Inc. | Systems, apparatus and methods for moving substrates |
| US8151814B2 (en) | 2009-01-13 | 2012-04-10 | Asm Japan K.K. | Method for controlling flow and concentration of liquid precursor |
| USD606952S1 (en) | 2009-01-16 | 2009-12-29 | Asm Genitech Korea Ltd. | Plasma inducing plate for semiconductor deposition apparatus |
| US8591659B1 (en) | 2009-01-16 | 2013-11-26 | Novellus Systems, Inc. | Plasma clean method for deposition chamber |
| US7972980B2 (en) | 2009-01-21 | 2011-07-05 | Asm Japan K.K. | Method of forming conformal dielectric film having Si-N bonds by PECVD |
| US7919416B2 (en) | 2009-01-21 | 2011-04-05 | Asm Japan K.K. | Method of forming conformal dielectric film having Si-N bonds by PECVD |
| US8142862B2 (en) | 2009-01-21 | 2012-03-27 | Asm Japan K.K. | Method of forming conformal dielectric film having Si-N bonds by PECVD |
| US20100189923A1 (en) | 2009-01-29 | 2010-07-29 | Asm Japan K.K. | Method of forming hardmask by plasma cvd |
| US8557702B2 (en) | 2009-02-02 | 2013-10-15 | Asm America, Inc. | Plasma-enhanced atomic layers deposition of conductive material over dielectric layers |
| US8680650B2 (en) | 2009-02-03 | 2014-03-25 | Micron Technology, Inc. | Capacitor structures having improved area efficiency |
| JP5330004B2 (ja) | 2009-02-03 | 2013-10-30 | 株式会社東芝 | 半導体装置の製造方法 |
| WO2010090948A1 (en) | 2009-02-04 | 2010-08-12 | Mattson Technology, Inc. | Electrostatic chuck system and process for radially tuning the temperature profile across the surface of a substrate |
| US8307472B1 (en) | 2009-02-04 | 2012-11-13 | Thomas Jason Saxon | Light emitting diode system |
| US20100203242A1 (en) | 2009-02-06 | 2010-08-12 | Applied Materials, Inc. | self-cleaning susceptor for solar cell processing |
| US8287648B2 (en) | 2009-02-09 | 2012-10-16 | Asm America, Inc. | Method and apparatus for minimizing contamination in semiconductor processing chamber |
| US8663735B2 (en) | 2009-02-13 | 2014-03-04 | Advanced Technology Materials, Inc. | In situ generation of RuO4 for ALD of Ru and Ru related materials |
| US8716132B2 (en) | 2009-02-13 | 2014-05-06 | Tokyo Electron Limited | Radiation-assisted selective deposition of metal-containing cap layers |
| WO2010093041A1 (ja) | 2009-02-16 | 2010-08-19 | 三菱樹脂株式会社 | ガスバリア性積層フィルムの製造方法 |
| GB2469112A (en) | 2009-04-03 | 2010-10-06 | Mapper Lithography Ip Bv | Wafer support using controlled capillary liquid layer to hold and release wafer |
| US8257799B2 (en) | 2009-02-23 | 2012-09-04 | Synos Technology, Inc. | Method for forming thin film using radicals generated by plasma |
| US8673081B2 (en) | 2009-02-25 | 2014-03-18 | Crystal Solar, Inc. | High throughput multi-wafer epitaxial reactor |
| US8692466B2 (en) | 2009-02-27 | 2014-04-08 | Mks Instruments Inc. | Method and apparatus of providing power to ignite and sustain a plasma in a reactive gas generator |
| JP5216632B2 (ja) | 2009-03-03 | 2013-06-19 | 東京エレクトロン株式会社 | 流体制御装置 |
| WO2010100702A1 (ja) | 2009-03-04 | 2010-09-10 | 富士電機ホールディングス株式会社 | 成膜方法及び成膜装置 |
| JP2010205967A (ja) | 2009-03-04 | 2010-09-16 | Tokyo Electron Ltd | プラズマエッチング方法、プラズマエッチング装置及びコンピュータ記憶媒体 |
| KR101049801B1 (ko) | 2009-03-05 | 2011-07-15 | 삼성모바일디스플레이주식회사 | 다결정 실리콘층의 제조방법 및 이에 이용되는 원자층 증착장치 |
| USD616390S1 (en) | 2009-03-06 | 2010-05-25 | Tokyo Electron Limited | Quartz cover for manufacturing semiconductor wafers |
| USD616394S1 (en) | 2009-03-06 | 2010-05-25 | Tokyo Electron Limited | Support of wafer boat for manufacturing semiconductor wafers |
| JP5221421B2 (ja) | 2009-03-10 | 2013-06-26 | 東京エレクトロン株式会社 | シャワーヘッド及びプラズマ処理装置 |
| JP2010239115A (ja) | 2009-03-10 | 2010-10-21 | Hitachi Kokusai Electric Inc | 基板処理装置 |
| JP5337542B2 (ja) | 2009-03-12 | 2013-11-06 | 株式会社堀場エステック | マスフローメータ、マスフローコントローラ、それらを含むマスフローメータシステムおよびマスフローコントローラシステム |
| US9359666B2 (en) | 2009-03-13 | 2016-06-07 | The Board Of Trustees Of The University Of Illinois | Rapid crystallization of heavily doped metal oxides and products produced thereby |
| JP5275094B2 (ja) | 2009-03-13 | 2013-08-28 | 東京エレクトロン株式会社 | 基板処理方法 |
| US8703624B2 (en) | 2009-03-13 | 2014-04-22 | Air Products And Chemicals, Inc. | Dielectric films comprising silicon and methods for making same |
| EP2230703A3 (en) | 2009-03-18 | 2012-05-02 | Semiconductor Energy Laboratory Co., Ltd. | Manufacturing apparatus and manufacturing method of lighting device |
| KR101055862B1 (ko) | 2009-03-23 | 2011-08-09 | 주식회사 테라세미콘 | 인라인 열처리 장치 |
| KR101583608B1 (ko) | 2009-03-24 | 2016-01-08 | 삼성전자 주식회사 | 무기계 실리콘 전구체를 이용한 실리콘 산화막의 형성 방법및 이를 이용한 반도체 장치의 제조 방법 |
| TW201118977A (en) | 2009-03-26 | 2011-06-01 | Panasonic Corp | Plasma processing apparatus and plasma processing method |
| WO2010110263A1 (ja) | 2009-03-27 | 2010-09-30 | 東京エレクトロン株式会社 | 金属窒化膜の成膜方法および記憶媒体 |
| US9004744B1 (en) | 2009-03-30 | 2015-04-14 | Techni-Blend, Inc. | Fluid mixer using countercurrent injection |
| US8118484B2 (en) | 2009-03-31 | 2012-02-21 | Rosemount Inc. | Thermocouple temperature sensor with connection detection circuitry |
| JP5292160B2 (ja) | 2009-03-31 | 2013-09-18 | 東京エレクトロン株式会社 | ガス流路構造体及び基板処理装置 |
| US8197915B2 (en) | 2009-04-01 | 2012-06-12 | Asm Japan K.K. | Method of depositing silicon oxide film by plasma enhanced atomic layer deposition at low temperature |
| JP5647792B2 (ja) | 2009-04-01 | 2015-01-07 | ピーエスフォー ルクスコ エスエイアールエルＰＳ４ Ｌｕｘｃｏ Ｓ．ａ．ｒ．ｌ． | キャパシタ用容量絶縁膜の製造方法 |
| US8284601B2 (en) | 2009-04-01 | 2012-10-09 | Samsung Electronics Co., Ltd. | Semiconductor memory device comprising three-dimensional memory cell array |
| US9394608B2 (en) | 2009-04-06 | 2016-07-19 | Asm America, Inc. | Semiconductor processing reactor and components thereof |
| US8486191B2 (en) | 2009-04-07 | 2013-07-16 | Asm America, Inc. | Substrate reactor with adjustable injectors for mixing gases within reaction chamber |
| US8402918B2 (en) | 2009-04-07 | 2013-03-26 | Lam Research Corporation | Showerhead electrode with centering feature |
| JP5338443B2 (ja) | 2009-04-14 | 2013-11-13 | 信越半導体株式会社 | Ｓｏｉウェーハの製造方法 |
| US8404499B2 (en) | 2009-04-20 | 2013-03-26 | Applied Materials, Inc. | LED substrate processing |
| US8193075B2 (en) | 2009-04-20 | 2012-06-05 | Applied Materials, Inc. | Remote hydrogen plasma with ion filter for terminating silicon dangling bonds |
| JP5710591B2 (ja) | 2009-04-20 | 2015-04-30 | アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ | プロセスチャンバ壁上にシリコンコーティングを使用した残留フッ素ラジカルの除去の促進 |
| US9431237B2 (en) | 2009-04-20 | 2016-08-30 | Applied Materials, Inc. | Post treatment methods for oxide layers on semiconductor devices |
| US20100266765A1 (en) | 2009-04-21 | 2010-10-21 | White Carl L | Method and apparatus for growing a thin film onto a substrate |
| SG10201401671SA (en) | 2009-04-21 | 2014-07-30 | Applied Materials Inc | Cvd apparatus for improved film thickness non-uniformity and particle performance |
| JP5204031B2 (ja) | 2009-04-22 | 2013-06-05 | Ｊｆｅ鋼板株式会社 | 嵌合式折板屋根材 |
| US8071452B2 (en) | 2009-04-27 | 2011-12-06 | Asm America, Inc. | Atomic layer deposition of hafnium lanthanum oxides |
| KR101178166B1 (ko) | 2009-04-28 | 2012-08-30 | 캐논 아네르바 가부시키가이샤 | 반도체 장치 및 그 제조 방법 |
| JP5136574B2 (ja) | 2009-05-01 | 2013-02-06 | 東京エレクトロン株式会社 | プラズマ処理装置及びプラズマ処理方法 |
| US8382370B2 (en) | 2009-05-06 | 2013-02-26 | Asm America, Inc. | Thermocouple assembly with guarded thermocouple junction |
| US8100583B2 (en) | 2009-05-06 | 2012-01-24 | Asm America, Inc. | Thermocouple |
| US9297705B2 (en) | 2009-05-06 | 2016-03-29 | Asm America, Inc. | Smart temperature measuring device |
| KR20100032812A (ko) | 2009-05-11 | 2010-03-26 | 주식회사 테스 | 화학기상증착 장치와 이를 이용한 기판 처리 시스템 |
| KR20100122701A (ko) | 2009-05-13 | 2010-11-23 | 주식회사 하이닉스반도체 | 반도체 소자의 제조방법 |
| US7842622B1 (en) | 2009-05-15 | 2010-11-30 | Asm Japan K.K. | Method of forming highly conformal amorphous carbon layer |
| US8962876B2 (en) | 2009-05-15 | 2015-02-24 | Wayne State University | Thermally stable volatile film precursors |
| KR101311621B1 (ko) | 2009-05-20 | 2013-09-26 | 가부시끼가이샤 도시바 | 요철 패턴 형성 방법 |
| US8004198B2 (en) | 2009-05-28 | 2011-08-23 | Osram Sylvania Inc. | Resetting an electronic ballast in the event of fault |
| KR101064210B1 (ko) | 2009-06-01 | 2011-09-14 | 한국생산기술연구원 | 막증착 진공장비용 샤워헤드 |
| EP2438655A1 (en) | 2009-06-05 | 2012-04-11 | Andrew LLC | Slip ring contact coaxial connector |
| US8758512B2 (en) | 2009-06-08 | 2014-06-24 | Veeco Ald Inc. | Vapor deposition reactor and method for forming thin film |
| KR101610773B1 (ko) | 2009-06-10 | 2016-04-08 | 주성엔지니어링(주) | 박막 형성 방법 및 이의 제조 장치 |
| US20100317198A1 (en) | 2009-06-12 | 2010-12-16 | Novellus Systems, Inc. | Remote plasma processing of interface surfaces |
| WO2010143306A1 (ja) | 2009-06-12 | 2010-12-16 | 株式会社 東芝 | 不揮発性半導体記憶装置 |
| USD652896S1 (en) | 2009-06-17 | 2012-01-24 | Neoperl Gmbh | Faucet stream former |
| US8926502B2 (en) | 2011-03-07 | 2015-01-06 | Endochoice, Inc. | Multi camera endoscope having a side service channel |
| US8715574B2 (en) | 2009-06-19 | 2014-05-06 | Abbott Laboratories | System for managing inventory of bulk liquids |
| US7825040B1 (en) | 2009-06-22 | 2010-11-02 | Asm Japan K.K. | Method for depositing flowable material using alkoxysilane or aminosilane precursor |
| JP5038365B2 (ja) | 2009-07-01 | 2012-10-03 | 株式会社東芝 | サセプタおよび成膜装置 |
| JP5285519B2 (ja) | 2009-07-01 | 2013-09-11 | パナソニック株式会社 | 半導体装置及びその製造方法 |
| KR101050405B1 (ko) | 2009-07-03 | 2011-07-19 | 주식회사 하이닉스반도체 | 스트레인드채널을 갖는 반도체장치 제조 방법 |
| KR101110080B1 (ko) | 2009-07-08 | 2012-03-13 | 주식회사 유진테크 | 확산판을 선택적으로 삽입설치하는 기판처리방법 |
| US20110006406A1 (en) | 2009-07-08 | 2011-01-13 | Imec | Fabrication of porogen residues free and mechanically robust low-k materials |
| US8382939B2 (en) | 2009-07-13 | 2013-02-26 | Applied Materials, Inc. | Plasma processing chamber with enhanced gas delivery |
| US8546276B2 (en) | 2009-07-14 | 2013-10-01 | L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude | Deposition of group IV metal-containing films at high temperature |
| JP2011023718A (ja) | 2009-07-15 | 2011-02-03 | Asm Japan Kk | ＰＥＡＬＤによってＳｉ−Ｎ結合を有するストレス調節された誘電体膜を形成する方法 |
| US8507389B2 (en) | 2009-07-17 | 2013-08-13 | Applied Materials, Inc. | Methods for forming dielectric layers |
| EP2455220B1 (en) | 2009-07-17 | 2015-11-25 | Mitsui Chemicals, Inc. | Laminate and process for production thereof |
| JP5223804B2 (ja) | 2009-07-22 | 2013-06-26 | 東京エレクトロン株式会社 | 成膜方法及び成膜装置 |
| US8980719B2 (en) | 2010-04-28 | 2015-03-17 | Taiwan Semiconductor Manufacturing Company, Ltd. | Methods for doping fin field-effect transistors |
| KR101245769B1 (ko) | 2009-07-28 | 2013-03-20 | 엘아이지에이디피 주식회사 | 화학기상증착장치, 화학기상증착장치용 가이드부재 및 화학기상증착장치를 이용한 박막제조방법 |
| US8071451B2 (en) | 2009-07-29 | 2011-12-06 | Axcelis Technologies, Inc. | Method of doping semiconductors |
| JP5618505B2 (ja) | 2009-07-30 | 2014-11-05 | テクノクオーツ株式会社 | 石英ガラス部材の再生方法 |
| US8119527B1 (en) | 2009-08-04 | 2012-02-21 | Novellus Systems, Inc. | Depositing tungsten into high aspect ratio features |
| US8124531B2 (en) | 2009-08-04 | 2012-02-28 | Novellus Systems, Inc. | Depositing tungsten into high aspect ratio features |
| CN102498557A (zh) | 2009-08-05 | 2012-06-13 | 应用材料公司 | 化学气相沉积设备 |
| US8741788B2 (en) | 2009-08-06 | 2014-06-03 | Applied Materials, Inc. | Formation of silicon oxide using non-carbon flowable CVD processes |
| WO2011017068A1 (en) | 2009-08-07 | 2011-02-10 | Sigma-Aldrich Co. | High molecular weight alkyl-allyl cobalttricarbonyl complexes and use thereof for preparing dielectric thin films |
| US8258588B2 (en) | 2009-08-07 | 2012-09-04 | Taiwan Semiconductor Manufacturing Company, Ltd. | Sealing layer of a field effect transistor |
| US8883270B2 (en) | 2009-08-14 | 2014-11-11 | Asm America, Inc. | Systems and methods for thin-film deposition of metal oxides using excited nitrogen—oxygen species |
| US8877655B2 (en) | 2010-05-07 | 2014-11-04 | Asm America, Inc. | Systems and methods for thin-film deposition of metal oxides using excited nitrogen-oxygen species |
| US8802201B2 (en) | 2009-08-14 | 2014-08-12 | Asm America, Inc. | Systems and methods for thin-film deposition of metal oxides using excited nitrogen-oxygen species |
| US8563085B2 (en) | 2009-08-18 | 2013-10-22 | Samsung Electronics Co., Ltd. | Precursor composition, methods of forming a layer, methods of forming a gate structure and methods of forming a capacitor |
| US7989365B2 (en) | 2009-08-18 | 2011-08-02 | Applied Materials, Inc. | Remote plasma source seasoning |
| WO2011021539A1 (ja) | 2009-08-20 | 2011-02-24 | 東京エレクトロン株式会社 | プラズマ処理装置とプラズマ処理方法 |
| KR101031226B1 (ko) | 2009-08-21 | 2011-04-29 | 에이피시스템 주식회사 | 급속열처리 장치의 히터블록 |
| US9237638B2 (en) | 2009-08-21 | 2016-01-12 | Tokyo Electron Limited | Plasma processing apparatus and substrate processing method |
| US20110185969A1 (en) | 2009-08-21 | 2011-08-04 | Varian Semiconductor Equipment Associates, Inc. | Dual heating for precise wafer temperature control |
| US9117773B2 (en) | 2009-08-26 | 2015-08-25 | Asm America, Inc. | High concentration water pulses for atomic layer deposition |
| USD634719S1 (en) | 2009-08-27 | 2011-03-22 | Ebara Corporation | Elastic membrane for semiconductor wafer polishing apparatus |
| USD633452S1 (en) | 2009-08-27 | 2011-03-01 | Ebara Corporation | Elastic membrane for semiconductor wafer polishing apparatus |
| US20110117728A1 (en) | 2009-08-27 | 2011-05-19 | Applied Materials, Inc. | Method of decontamination of process chamber after in-situ chamber clean |
| US9117769B2 (en) | 2009-08-27 | 2015-08-25 | Tokyo Electron Limited | Plasma etching method |
| WO2011026064A1 (en) | 2009-08-31 | 2011-03-03 | The Penn State Research Foundation | Improved plasma enhanced atomic layer deposition process |
| JP2011054708A (ja) | 2009-09-01 | 2011-03-17 | Elpida Memory Inc | 絶縁膜およびその製造方法、半導体装置、ならびにデータ処理システム |
| JP2013503849A (ja) | 2009-09-02 | 2013-02-04 | レール・リキード−ソシエテ・アノニム・プール・レテュード・エ・レクスプロワタシオン・デ・プロセデ・ジョルジュ・クロード | ゲルマニウム含有フィルムの堆積のための二ハロゲン化ゲルマニウム（ｉｉ）先駆物質 |
| JP5457109B2 (ja) | 2009-09-02 | 2014-04-02 | 東京エレクトロン株式会社 | プラズマ処理装置 |
| JP2011054878A (ja) | 2009-09-04 | 2011-03-17 | Panasonic Corp | 半導体装置及びその製造方法 |
| US9012333B2 (en) | 2009-09-09 | 2015-04-21 | Spansion Llc | Varied silicon richness silicon nitride formation |
| KR200479181Y1 (ko) | 2009-09-10 | 2015-12-30 | 램 리써치 코포레이션 | 플라즈마 처리 장치의 교체가능한 상부 체임버 부품 |
| US20110061810A1 (en) | 2009-09-11 | 2011-03-17 | Applied Materials, Inc. | Apparatus and Methods for Cyclical Oxidation and Etching |
| JP2011082493A (ja) | 2009-09-14 | 2011-04-21 | Hitachi Kokusai Electric Inc | 半導体装置の製造方法及び基板処理装置 |
| JP5454575B2 (ja) | 2009-09-17 | 2014-03-26 | 東京エレクトロン株式会社 | プラズマ処理装置およびプラズマ処理装置用ガス供給機構 |
| SG169960A1 (en) | 2009-09-18 | 2011-04-29 | Lam Res Corp | Clamped monolithic showerhead electrode |
| US8278224B1 (en) | 2009-09-24 | 2012-10-02 | Novellus Systems, Inc. | Flowable oxide deposition using rapid delivery of process gases |
| US8216640B2 (en) | 2009-09-25 | 2012-07-10 | Hermes-Epitek Corporation | Method of making showerhead for semiconductor processing apparatus |
| JP5504793B2 (ja) | 2009-09-26 | 2014-05-28 | 東京エレクトロン株式会社 | 熱処理装置及び冷却方法 |
| WO2011040385A1 (ja) | 2009-09-29 | 2011-04-07 | 東京エレクトロン株式会社 | Ｎｉ膜の成膜方法 |
| JP5467007B2 (ja) | 2009-09-30 | 2014-04-09 | 株式会社日立国際電気 | 半導体装置の製造方法および基板処理装置 |
| EP2306497B1 (en) | 2009-10-02 | 2012-06-06 | Imec | Method for manufacturing a low defect interface between a dielectric and a III/V compound |
| TW201131651A (en) | 2009-10-05 | 2011-09-16 | Univ Tohoku | Low dielectric constant insulating film |
| US8544317B2 (en) | 2009-10-09 | 2013-10-01 | Taiwan Semiconductor Manufacturing Co., Ltd. | Semiconductor processing apparatus with simultaneously movable stages |
| US8415259B2 (en) | 2009-10-14 | 2013-04-09 | Asm Japan K.K. | Method of depositing dielectric film by modified PEALD method |
| US8173554B2 (en) | 2009-10-14 | 2012-05-08 | Asm Japan K.K. | Method of depositing dielectric film having Si-N bonds by modified peald method |
| JP5410235B2 (ja) | 2009-10-15 | 2014-02-05 | 小島プレス工業株式会社 | 有機高分子薄膜の形成方法及び形成装置 |
| US8465791B2 (en) | 2009-10-16 | 2013-06-18 | Msp Corporation | Method for counting particles in a gas |
| WO2011049816A2 (en) | 2009-10-20 | 2011-04-28 | Asm International N.V. | Processes for passivating dielectric films |
| KR101490726B1 (ko) | 2009-10-21 | 2015-02-09 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
| US8637794B2 (en) | 2009-10-21 | 2014-01-28 | Lam Research Corporation | Heating plate with planar heating zones for semiconductor processing |
| US20110097901A1 (en) | 2009-10-26 | 2011-04-28 | Applied Materials, Inc. | Dual mode inductively coupled plasma reactor with adjustable phase coil assembly |
| WO2011056519A2 (en) | 2009-10-26 | 2011-05-12 | Asm International N.V. | Synthesis and use of precursors for ald of group va element containing thin films |
| EP2494187A4 (en) | 2009-10-29 | 2013-07-10 | Oceana Energy Co | SYSTEMS AND METHODS FOR ENERGY CONVERSION |
| JP5434484B2 (ja) | 2009-11-02 | 2014-03-05 | 東京エレクトロン株式会社 | 成膜装置、成膜方法及び記憶媒体 |
| JP5257328B2 (ja) | 2009-11-04 | 2013-08-07 | 東京エレクトロン株式会社 | 基板処理装置、基板処理方法及び記憶媒体 |
| JP5451324B2 (ja) | 2009-11-10 | 2014-03-26 | 株式会社日立ハイテクノロジーズ | プラズマ処理装置 |
| US8528224B2 (en) | 2009-11-12 | 2013-09-10 | Novellus Systems, Inc. | Systems and methods for at least partially converting films to silicon oxide and/or improving film quality using ultraviolet curing in steam and densification of films using UV curing in ammonia |
| US8854734B2 (en) | 2009-11-12 | 2014-10-07 | Vela Technologies, Inc. | Integrating optical system and methods |
| JP4948587B2 (ja) | 2009-11-13 | 2012-06-06 | 東京エレクトロン株式会社 | フォトレジスト塗布現像装置、基板搬送方法、インターフェイス装置 |
| KR101829472B1 (ko) | 2009-11-13 | 2018-02-14 | 바스프 에스이 | 염소 공급물의 정제 방법 |
| US8329585B2 (en) | 2009-11-17 | 2012-12-11 | Lam Research Corporation | Method for reducing line width roughness with plasma pre-etch treatment on photoresist |
| US8367528B2 (en) | 2009-11-17 | 2013-02-05 | Asm America, Inc. | Cyclical epitaxial deposition and etch |
| US8742665B2 (en) | 2009-11-18 | 2014-06-03 | Applied Materials, Inc. | Plasma source design |
| US8771538B2 (en) | 2009-11-18 | 2014-07-08 | Applied Materials, Inc. | Plasma source design |
| JP5753351B2 (ja) | 2009-11-19 | 2015-07-22 | ローム アンド ハース エレクトロニック マテリアルズ エルエルシーＲｏｈｍ ａｎｄ Ｈａａｓ Ｅｌｅｃｔｒｏｎｉｃ Ｍａｔｅｒｉａｌｓ ＬＬＣ | 電子デバイスを形成する方法 |
| KR20110055912A (ko) | 2009-11-20 | 2011-05-26 | 주식회사 하이닉스반도체 | 반도체 소자의 콘택홀 형성방법 |
| AU329418S (en) | 2009-11-23 | 2010-01-29 | Pusher tool | |
| KR101128267B1 (ko) | 2009-11-26 | 2012-03-26 | 주식회사 테스 | 가스분사장치 및 이를 갖는 공정 챔버 |
| US8323558B2 (en) | 2009-11-30 | 2012-12-04 | L'air Liquide Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude | Dynamic control of lance utilizing counterflow fluidic techniques |
| JP5432686B2 (ja) | 2009-12-03 | 2014-03-05 | 東京エレクトロン株式会社 | プラズマ処理装置 |
| US8389977B2 (en) | 2009-12-10 | 2013-03-05 | Transphorm Inc. | Reverse side engineered III-nitride devices |
| DE112010004736B4 (de) | 2009-12-11 | 2022-04-21 | Sumco Corporation | Aufnahmefür cvd und verfahren zur herstellung eines films unterverwendung derselben |
| US8328494B2 (en) | 2009-12-15 | 2012-12-11 | Varian Semiconductor Equipment Associates, Inc. | In vacuum optical wafer heater for cryogenic processing |
| US20110139748A1 (en) | 2009-12-15 | 2011-06-16 | University Of Houston | Atomic layer etching with pulsed plasmas |
| US20110140173A1 (en) | 2009-12-16 | 2011-06-16 | National Semiconductor Corporation | Low OHMIC contacts containing germanium for gallium nitride or other nitride-based power devices |
| US8507720B2 (en) | 2010-01-29 | 2013-08-13 | Lyondell Chemical Technology, L.P. | Titania-alumina supported palladium catalyst |
| JP5419276B2 (ja) | 2009-12-24 | 2014-02-19 | 株式会社堀場製作所 | 材料ガス濃度制御システム及び材料ガス濃度制御システム用プログラム |
| JP5606063B2 (ja) | 2009-12-28 | 2014-10-15 | 東京エレクトロン株式会社 | プラズマ処理装置 |
| US20110159202A1 (en) | 2009-12-29 | 2011-06-30 | Asm Japan K.K. | Method for Sealing Pores at Surface of Dielectric Layer by UV Light-Assisted CVD |
| KR20110078326A (ko) | 2009-12-31 | 2011-07-07 | 삼성전자주식회사 | 유전막 형성 방법 및 이를 이용한 반도체 소자 제조 방법 |
| USD653734S1 (en) | 2010-01-08 | 2012-02-07 | Bulk Tank, Inc. | Screened gasket |
| JP2011166106A (ja) | 2010-01-13 | 2011-08-25 | Renesas Electronics Corp | 半導体装置の製造方法及び半導体装置 |
| JP2011144412A (ja) | 2010-01-13 | 2011-07-28 | Honda Motor Co Ltd | プラズマ成膜装置 |
| JP5549441B2 (ja) | 2010-01-14 | 2014-07-16 | 東京エレクトロン株式会社 | 保持体機構、ロードロック装置、処理装置及び搬送機構 |
| US8252624B2 (en) | 2010-01-18 | 2012-08-28 | Applied Materials, Inc. | Method of manufacturing thin film solar cells having a high conversion efficiency |
| USD651291S1 (en) | 2010-01-24 | 2011-12-27 | Glv International (1995) Ltd. | Duct connector ring |
| US20110183269A1 (en) | 2010-01-25 | 2011-07-28 | Hongbin Zhu | Methods Of Forming Patterns, And Methods For Trimming Photoresist Features |
| US20110180233A1 (en) | 2010-01-27 | 2011-07-28 | Applied Materials, Inc. | Apparatus for controlling temperature uniformity of a showerhead |
| US8480942B2 (en) | 2010-01-27 | 2013-07-09 | The Board Of Trustees Of The University Of Illinois | Method of forming a patterned layer of a material on a substrate |
| JP5610438B2 (ja) | 2010-01-29 | 2014-10-22 | 株式会社日立国際電気 | 基板処理装置及び半導体装置の製造方法 |
| JP5107372B2 (ja) | 2010-02-04 | 2012-12-26 | 東京エレクトロン株式会社 | 熱処理装置、塗布現像処理システム、熱処理方法、塗布現像処理方法及びその熱処理方法又は塗布現像処理方法を実行させるためのプログラムを記録した記録媒体 |
| WO2011096208A1 (ja) | 2010-02-05 | 2011-08-11 | 東京エレクトロン株式会社 | 基板保持具及び基板搬送装置及び基板処理装置 |
| KR101080604B1 (ko) | 2010-02-09 | 2011-11-04 | 성균관대학교산학협력단 | 원자층 식각 장치 및 이를 이용한 식각 방법 |
| JP2011162830A (ja) | 2010-02-09 | 2011-08-25 | Fuji Electric Co Ltd | プラズマｃｖｄによる成膜方法、成膜済基板および成膜装置 |
| US20110198034A1 (en) | 2010-02-11 | 2011-08-18 | Jennifer Sun | Gas distribution showerhead with coating material for semiconductor processing |
| WO2011100293A2 (en) | 2010-02-12 | 2011-08-18 | Applied Materials, Inc. | Process chamber gas flow improvements |
| US8562272B2 (en) | 2010-02-16 | 2013-10-22 | Lam Research Corporation | Substrate load and unload mechanisms for high throughput |
| US8293658B2 (en) | 2010-02-17 | 2012-10-23 | Asm America, Inc. | Reactive site deactivation against vapor deposition |
| WO2011105596A1 (ja) | 2010-02-23 | 2011-09-01 | 旭有機材工業株式会社 | インライン型流体混合装置 |
| WO2011106072A2 (en) | 2010-02-23 | 2011-09-01 | L'air Liquide Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude | Use of ruthenium tetroxide as a precursor and reactant for thin film depositions |
| US20110207332A1 (en) | 2010-02-25 | 2011-08-25 | Taiwan Semiconductor Manufacturing Co., Ltd. | Thin film coated process kits for semiconductor manufacturing tools |
| USD625977S1 (en) | 2010-02-25 | 2010-10-26 | Vertex Stone and Chinaware Ltd. | Spacer tool |
| JP5812606B2 (ja) | 2010-02-26 | 2015-11-17 | 株式会社日立国際電気 | 基板処理装置及び半導体装置の製造方法 |
| EP2362411A1 (en) | 2010-02-26 | 2011-08-31 | Nederlandse Organisatie voor toegepast -natuurwetenschappelijk onderzoek TNO | Apparatus and method for reactive ion etching |
| JP2011181681A (ja) | 2010-03-01 | 2011-09-15 | Mitsui Eng & Shipbuild Co Ltd | 原子層堆積方法及び原子層堆積装置 |
| US8241991B2 (en) | 2010-03-05 | 2012-08-14 | Asm Japan K.K. | Method for forming interconnect structure having airgap |
| SG183536A1 (en) | 2010-03-12 | 2012-09-27 | Applied Materials Inc | Atomic layer deposition chamber with multi inject |
| JP5592129B2 (ja) | 2010-03-16 | 2014-09-17 | 東京エレクトロン株式会社 | プラズマ処理装置 |
| FR2957716B1 (fr) | 2010-03-18 | 2012-10-05 | Soitec Silicon On Insulator | Procede de finition d'un substrat de type semi-conducteur sur isolant |
| US20110236201A1 (en) | 2010-03-23 | 2011-09-29 | Sumedhkumar Vyankatesh Shende | Method and apparatus for radial exhaust gas turbine |
| US8039388B1 (en) | 2010-03-24 | 2011-10-18 | Taiwam Semiconductor Manufacturing Company, Ltd. | Main spacer trim-back method for replacement gate process |
| US8741394B2 (en) | 2010-03-25 | 2014-06-03 | Novellus Systems, Inc. | In-situ deposition of film stacks |
| US8709551B2 (en) | 2010-03-25 | 2014-04-29 | Novellus Systems, Inc. | Smooth silicon-containing films |
| US8242460B2 (en) | 2010-03-29 | 2012-08-14 | Tokyo Electron Limited | Ultraviolet treatment apparatus |
| CN102792427A (zh) | 2010-03-31 | 2012-11-21 | 东京毅力科创株式会社 | 等离子体处理装置用电介质窗、等离子体处理装置和等离子体处理装置用电介质窗的安装方法 |
| US20130078376A1 (en) | 2010-04-01 | 2013-03-28 | L'air Liquide, Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude | Metal nitride containing film deposition using combination of amino-metal and halogenated metal precursors |
| JP4733214B1 (ja) | 2010-04-02 | 2011-07-27 | 東京エレクトロン株式会社 | マスクパターンの形成方法及び半導体装置の製造方法 |
| KR101211043B1 (ko) | 2010-04-05 | 2012-12-12 | 에스케이하이닉스 주식회사 | 매립게이트를 구비한 반도체 장치 제조방법 |
| WO2011125395A1 (ja) | 2010-04-09 | 2011-10-13 | 株式会社日立国際電気 | 半導体装置の製造方法、基板処理方法および基板処理装置 |
| US20110256692A1 (en) | 2010-04-14 | 2011-10-20 | Applied Materials, Inc. | Multiple precursor concentric delivery showerhead |
| EP2378543B1 (en) | 2010-04-14 | 2015-05-20 | ASM Genitech Korea Ltd. | Method of forming semiconductor patterns |
| US9390909B2 (en) | 2013-11-07 | 2016-07-12 | Novellus Systems, Inc. | Soft landing nanolaminates for advanced patterning |
| US8993460B2 (en) | 2013-01-10 | 2015-03-31 | Novellus Systems, Inc. | Apparatuses and methods for depositing SiC/SiCN films via cross-metathesis reactions with organometallic co-reactants |
| US8956983B2 (en) | 2010-04-15 | 2015-02-17 | Novellus Systems, Inc. | Conformal doping via plasma activated atomic layer deposition and conformal film deposition |
| US8637411B2 (en) | 2010-04-15 | 2014-01-28 | Novellus Systems, Inc. | Plasma activated conformal dielectric film deposition |
| US9373500B2 (en) | 2014-02-21 | 2016-06-21 | Lam Research Corporation | Plasma assisted atomic layer deposition titanium oxide for conformal encapsulation and gapfill applications |
| US9997357B2 (en) | 2010-04-15 | 2018-06-12 | Lam Research Corporation | Capped ALD films for doping fin-shaped channel regions of 3-D IC transistors |
| US9257274B2 (en) | 2010-04-15 | 2016-02-09 | Lam Research Corporation | Gapfill of variable aspect ratio features with a composite PEALD and PECVD method |
| US9611544B2 (en) | 2010-04-15 | 2017-04-04 | Novellus Systems, Inc. | Plasma activated conformal dielectric film deposition |
| US9076646B2 (en) | 2010-04-15 | 2015-07-07 | Lam Research Corporation | Plasma enhanced atomic layer deposition with pulsed plasma exposure |
| US9892917B2 (en) | 2010-04-15 | 2018-02-13 | Lam Research Corporation | Plasma assisted atomic layer deposition of multi-layer films for patterning applications |
| US20110256734A1 (en) | 2010-04-15 | 2011-10-20 | Hausmann Dennis M | Silicon nitride films and methods |
| CN102906305B (zh) | 2010-04-15 | 2016-01-13 | 诺发系统公司 | 气体和液体的喷射的方法和装置 |
| CZ303655B6 (cs) | 2010-04-16 | 2013-01-30 | Skutchanová@Zuzana | Zpusob výroby brousicího povrchu skleneného kosmetického prípravku |
| US8852685B2 (en) | 2010-04-23 | 2014-10-07 | Lam Research Corporation | Coating method for gas delivery system |
| TWI536451B (zh) | 2010-04-26 | 2016-06-01 | 應用材料股份有限公司 | 使用具金屬系前驅物之化學氣相沉積與原子層沉積製程之ｎ型金氧半導體金屬閘極材料、製造方法及設備 |
| KR101121858B1 (ko) | 2010-04-27 | 2012-03-21 | 주식회사 하이닉스반도체 | 반도체 소자의 제조 방법 |
| KR20110120661A (ko) | 2010-04-29 | 2011-11-04 | 주식회사 하이닉스반도체 | 비휘발성 메모리 장치 및 그의 제조 방법 |
| CH702999A1 (de) | 2010-04-29 | 2011-10-31 | Amt Ag | Vorrichtung zur Beschichtung von Substraten mittels Hochgeschwindigkeitsflammspritzen. |
| US20110265951A1 (en) | 2010-04-30 | 2011-11-03 | Applied Materials, Inc. | Twin chamber processing system |
| US20110269314A1 (en) | 2010-04-30 | 2011-11-03 | Applied Materials, Inc. | Process chambers having shared resources and methods of use thereof |
| US8496756B2 (en) | 2010-04-30 | 2013-07-30 | Applied Materials, Inc. | Methods for processing substrates in process systems having shared resources |
| US8707754B2 (en) | 2010-04-30 | 2014-04-29 | Applied Materials, Inc. | Methods and apparatus for calibrating flow controllers in substrate processing systems |
| JP5660804B2 (ja) | 2010-04-30 | 2015-01-28 | 東京エレクトロン株式会社 | カーボンナノチューブの形成方法及びカーボンナノチューブ成膜装置 |
| KR101796656B1 (ko) | 2010-04-30 | 2017-11-13 | 어플라이드 머티어리얼스, 인코포레이티드 | 수직 인라인 화학기상증착 시스템 |
| US8241992B2 (en) | 2010-05-10 | 2012-08-14 | International Business Machines Corporation | Method for air gap interconnect integration using photo-patternable low k material |
| US9441295B2 (en) | 2010-05-14 | 2016-09-13 | Solarcity Corporation | Multi-channel gas-delivery system |
| JP2012004536A (ja) | 2010-05-20 | 2012-01-05 | Hitachi Kokusai Electric Inc | 基板処理装置及び基板処理方法 |
| US20110294075A1 (en) | 2010-05-25 | 2011-12-01 | United Microelectronics Corp. | Patterning method |
| MY162263A (en) | 2010-05-28 | 2017-05-31 | Exxonmobil Upstream Res Co | Integrated adsorber head and valve design and swing adsorption methods related thereto |
| US8513129B2 (en) | 2010-05-28 | 2013-08-20 | Applied Materials, Inc. | Planarizing etch hardmask to increase pattern density and aspect ratio |
| WO2011151996A1 (ja) | 2010-06-01 | 2011-12-08 | パナソニック株式会社 | プラズマ処理装置及びプラズマ処理方法 |
| US8912353B2 (en) | 2010-06-02 | 2014-12-16 | Air Products And Chemicals, Inc. | Organoaminosilane precursors and methods for depositing films comprising same |
| US8637390B2 (en) | 2010-06-04 | 2014-01-28 | Applied Materials, Inc. | Metal gate structures and methods for forming thereof |
| US20110297088A1 (en) | 2010-06-04 | 2011-12-08 | Texas Instruments Incorporated | Thin edge carrier ring |
| JP5794497B2 (ja) | 2010-06-08 | 2015-10-14 | 国立研究開発法人産業技術総合研究所 | 連結システム |
| WO2011156576A1 (en) | 2010-06-09 | 2011-12-15 | The Procter & Gamble Company | Semi-continuous feed production of liquid personal care compositions |
| TWI529808B (zh) | 2010-06-10 | 2016-04-11 | Ａｓｍ國際股份有限公司 | 使膜選擇性沈積於基板上的方法 |
| JP5525339B2 (ja) | 2010-06-10 | 2014-06-18 | ナブテスコ株式会社 | ロボットアーム |
| JP2012004401A (ja) | 2010-06-18 | 2012-01-05 | Fujitsu Semiconductor Ltd | 半導体装置の製造方法 |
| JP5597456B2 (ja) | 2010-06-29 | 2014-10-01 | 東京エレクトロン株式会社 | 誘電体の厚さ設定方法、及び電極に設けられた誘電体を備える基板処理装置 |
| US8778745B2 (en) | 2010-06-29 | 2014-07-15 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
| US9570328B2 (en) | 2010-06-30 | 2017-02-14 | Applied Materials, Inc. | Substrate support for use with multi-zonal heating sources |
| JP5119297B2 (ja) | 2010-06-30 | 2013-01-16 | 東京エレクトロン株式会社 | 基板処理装置 |
| EP2589071A4 (en) | 2010-07-02 | 2014-04-09 | Matheson Tri Gas Inc | THIN FINISHES AND METHOD FOR THE PRODUCTION THEREOF BY USING CYCLOHEXASILANE |
| KR20120003677A (ko) | 2010-07-05 | 2012-01-11 | 삼성전자주식회사 | 반도체 장치 및 그의 형성 방법 |
| US9373677B2 (en) | 2010-07-07 | 2016-06-21 | Entegris, Inc. | Doping of ZrO2 for DRAM applications |
| JP5405667B2 (ja) | 2010-07-22 | 2014-02-05 | 株式会社日立国際電気 | 基板処理装置および半導体装置の製造方法 |
| KR20160068986A (ko) | 2010-07-22 | 2016-06-15 | 비코 에이엘디 인코포레이티드 | 원자층 증착에서 불활성 기체 플라즈마를 이용한 기판 표면의 처리 |
| JP5707766B2 (ja) | 2010-07-28 | 2015-04-30 | 住友電気工業株式会社 | サセプタおよび半導体製造装置 |
| US8721791B2 (en) | 2010-07-28 | 2014-05-13 | Applied Materials, Inc. | Showerhead support structure for improved gas flow |
| US20120024478A1 (en) | 2010-07-29 | 2012-02-02 | Hermes-Epitek Corporation | Showerhead |
| JP5490753B2 (ja) | 2010-07-29 | 2014-05-14 | 東京エレクトロン株式会社 | トレンチの埋め込み方法および成膜システム |
| US8669185B2 (en) | 2010-07-30 | 2014-03-11 | Asm Japan K.K. | Method of tailoring conformality of Si-containing film |
| US9443753B2 (en) | 2010-07-30 | 2016-09-13 | Applied Materials, Inc. | Apparatus for controlling the flow of a gas in a process chamber |
| US8318584B2 (en) | 2010-07-30 | 2012-11-27 | Applied Materials, Inc. | Oxide-rich liner layer for flowable CVD gapfill |
| JP2012038819A (ja) | 2010-08-04 | 2012-02-23 | Sanyo Electric Co Ltd | 半導体レーザ装置および光装置 |
| JP5503006B2 (ja) | 2010-08-06 | 2014-05-28 | 東京エレクトロン株式会社 | 基板処理システム、搬送モジュール、基板処理方法及び半導体素子の製造方法 |
| US20130084408A1 (en) | 2010-08-06 | 2013-04-04 | Mitsubishi Heavy Industries, Ltd. | Vacuum processing apparatus and plasma processing method |
| US9449793B2 (en) | 2010-08-06 | 2016-09-20 | Lam Research Corporation | Systems, methods and apparatus for choked flow element extraction |
| US8357608B2 (en) | 2010-08-09 | 2013-01-22 | International Business Machines Corporation | Multi component dielectric layer |
| US9449858B2 (en) | 2010-08-09 | 2016-09-20 | Applied Materials, Inc. | Transparent reflector plate for rapid thermal processing chamber |
| CN103338807B (zh) | 2010-08-10 | 2016-06-29 | 加利福尼亚大学董事会 | 自动的流体输送系统及方法 |
| US9783885B2 (en) | 2010-08-11 | 2017-10-10 | Unit Cell Diamond Llc | Methods for producing diamond mass and apparatus therefor |
| KR101249999B1 (ko) | 2010-08-12 | 2013-04-03 | 주식회사 디엠에스 | 화학기상증착 장치 |
| US8535445B2 (en) | 2010-08-13 | 2013-09-17 | Veeco Instruments Inc. | Enhanced wafer carrier |
| KR101658492B1 (ko) | 2010-08-13 | 2016-09-21 | 삼성전자주식회사 | 미세 패턴의 형성 방법 및 이를 이용한 반도체 소자의 제조 방법 |
| US9487600B2 (en) | 2010-08-17 | 2016-11-08 | Uchicago Argonne, Llc | Ordered nanoscale domains by infiltration of block copolymers |
| USD649986S1 (en) | 2010-08-17 | 2011-12-06 | Ebara Corporation | Sealing ring |
| US8685845B2 (en) | 2010-08-20 | 2014-04-01 | International Business Machines Corporation | Epitaxial growth of silicon doped with carbon and phosphorus using hydrogen carrier gas |
| FI124113B (fi) | 2010-08-30 | 2014-03-31 | Beneq Oy | Laitteisto ja menetelmä substraatin pinnan muokkaamiseksi |
| US8945305B2 (en) | 2010-08-31 | 2015-02-03 | Micron Technology, Inc. | Methods of selectively forming a material using parylene coating |
| CN102386067B (zh) | 2010-08-31 | 2013-12-18 | 中国科学院上海微系统与信息技术研究所 | 有效抑制自掺杂效应的外延生长方法 |
| US8573152B2 (en) | 2010-09-03 | 2013-11-05 | Lam Research Corporation | Showerhead electrode |
| EP2426233B1 (en) | 2010-09-03 | 2013-05-01 | L'air Liquide, Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude | Use of dialkyl monoalkoxy aluminum for the growth of Al2O3 thin films for photovoltaic applications |
| US8394466B2 (en) | 2010-09-03 | 2013-03-12 | Asm Japan K.K. | Method of forming conformal film having si-N bonds on high-aspect ratio pattern |
| CN102383106B (zh) | 2010-09-03 | 2013-12-25 | 甘志银 | 快速清除残余反应气体的金属有机物化学气相沉积反应腔体 |
| US20120058630A1 (en) | 2010-09-08 | 2012-03-08 | Veeco Instruments Inc. | Linear Cluster Deposition System |
| JP2012080095A (ja) | 2010-09-10 | 2012-04-19 | Elpida Memory Inc | 半導体装置及びその製造方法 |
| JP5560147B2 (ja) | 2010-09-13 | 2014-07-23 | 東京エレクトロン株式会社 | 成膜方法及び半導体装置の製造方法 |
| JP5845754B2 (ja) | 2010-09-15 | 2016-01-20 | 東京エレクトロン株式会社 | プラズマエッチング処理方法 |
| KR20120029291A (ko) | 2010-09-16 | 2012-03-26 | 삼성전자주식회사 | 반도체 소자 및 그 제조 방법 |
| CN103119696A (zh) | 2010-09-21 | 2013-05-22 | 株式会社爱发科 | 薄膜制造方法和薄膜制造装置 |
| US8524612B2 (en) | 2010-09-23 | 2013-09-03 | Novellus Systems, Inc. | Plasma-activated deposition of conformal films |
| US9685320B2 (en)* | 2010-09-23 | 2017-06-20 | Lam Research Corporation | Methods for depositing silicon oxide |
| US8722548B2 (en) | 2010-09-24 | 2014-05-13 | International Business Machines Corporation | Structures and techniques for atomic layer deposition |
| TWI513848B (zh) | 2010-09-24 | 2015-12-21 | Ferrotec Usa Corp | 混合氣體注射器 |
| US20120073400A1 (en) | 2010-09-29 | 2012-03-29 | John Wang | Handlebar grip assembly |
| US20120083134A1 (en) | 2010-09-30 | 2012-04-05 | Hui-Jung Wu | Method of mitigating substrate damage during deposition processes |
| US7994070B1 (en) | 2010-09-30 | 2011-08-09 | Tokyo Electron Limited | Low-temperature dielectric film formation by chemical vapor deposition |
| TW201224190A (en) | 2010-10-06 | 2012-06-16 | Applied Materials Inc | Atomic layer deposition of photoresist materials and hard mask precursors |
| US8076250B1 (en) | 2010-10-06 | 2011-12-13 | Applied Materials, Inc. | PECVD oxide-nitride and oxide-silicon stacks for 3D memory application |
| FR2965888B1 (fr) | 2010-10-08 | 2012-12-28 | Alcatel Lucent | Canalisation d'evacuation de gaz et procede d'evacuation associe |
| JP5638405B2 (ja) | 2010-10-08 | 2014-12-10 | パナソニック株式会社 | 基板のプラズマ処理方法 |
| US8664127B2 (en) | 2010-10-15 | 2014-03-04 | Applied Materials, Inc. | Two silicon-containing precursors for gapfill enhancing dielectric liner |
| JP5734081B2 (ja) | 2010-10-18 | 2015-06-10 | 株式会社日立国際電気 | 基板処理装置、基板処理装置の温度制御方法、及び基板処理装置の加熱方法 |
| US8771791B2 (en) | 2010-10-18 | 2014-07-08 | Veeco Ald Inc. | Deposition of layer using depositing apparatus with reciprocating susceptor |
| WO2012054206A2 (en) | 2010-10-19 | 2012-04-26 | Applied Materials, Inc. | Quartz showerhead for nanocure uv chamber |
| JP5636867B2 (ja) | 2010-10-19 | 2014-12-10 | 富士通株式会社 | 半導体装置及び半導体装置の製造方法 |
| USD654884S1 (en) | 2010-10-21 | 2012-02-28 | Tokyo Electron Limited | Top plate for reactor for manufacturing semiconductor |
| US8192901B2 (en) | 2010-10-21 | 2012-06-05 | Asahi Glass Company, Limited | Glass substrate-holding tool |
| USD655261S1 (en) | 2010-10-21 | 2012-03-06 | Tokyo Electron Limited | Gas-separating plate for reactor for manufacturing semiconductor |
| US11675269B2 (en) | 2010-10-21 | 2023-06-13 | Nissan Chemical Industries, Ltd. | Composition for forming resist overlayer film for EUV lithography |
| USD654882S1 (en) | 2010-10-21 | 2012-02-28 | Tokyo Electron Limited | Gas-separating plate for reactor for manufacturing semiconductor |
| USD655260S1 (en) | 2010-10-21 | 2012-03-06 | Tokyo Electron Limited | Gas-separating plate for reactor for manufacturing semiconductor |
| US8845806B2 (en) | 2010-10-22 | 2014-09-30 | Asm Japan K.K. | Shower plate having different aperture dimensions and/or distributions |
| KR20130141550A (ko) | 2010-10-27 | 2013-12-26 | 어플라이드 머티어리얼스, 인코포레이티드 | 포토레지스트 선폭 거칠기를 조절하기 위한 방법들 및 장치 |
| US8926788B2 (en) | 2010-10-27 | 2015-01-06 | Lam Research Ag | Closed chamber for wafer wet processing |
| JP4755307B1 (ja) | 2010-10-28 | 2011-08-24 | 株式会社朝日工業社 | クリーンルーム |
| JP5544343B2 (ja) | 2010-10-29 | 2014-07-09 | 東京エレクトロン株式会社 | 成膜装置 |
| KR20120047325A (ko) | 2010-11-01 | 2012-05-11 | 삼성전자주식회사 | 3차원 반도체 장치 및 그 제조 방법 |
| KR101716113B1 (ko) | 2010-11-03 | 2017-03-15 | 삼성전자 주식회사 | 반도체 소자 및 이의 제조 방법 |
| US8440571B2 (en) | 2010-11-03 | 2013-05-14 | Applied Materials, Inc. | Methods for deposition of silicon carbide and silicon carbonitride films |
| KR20130086620A (ko) | 2010-11-05 | 2013-08-02 | 시너스 테크놀리지, 인코포레이티드 | 다중 플라즈마 챔버를 구비한 라디칼 반응기 |
| US8470187B2 (en) | 2010-11-05 | 2013-06-25 | Asm Japan K.K. | Method of depositing film with tailored comformality |
| JP5722595B2 (ja) | 2010-11-11 | 2015-05-20 | 株式会社日立国際電気 | 基板処理装置および半導体装置の製造方法 |
| US20120121823A1 (en) | 2010-11-12 | 2012-05-17 | Applied Materials, Inc. | Process for lowering adhesion layer thickness and improving damage resistance for thin ultra low-k dielectric film |
| JP2012109446A (ja) | 2010-11-18 | 2012-06-07 | Tokyo Electron Ltd | 絶縁部材及び絶縁部材を備えた基板処理装置 |
| US20140144500A1 (en) | 2010-11-22 | 2014-05-29 | E I Du Pont De Nemours And Company | Semiconductor inks films, coated substrates and methods of preparation |
| KR20120055363A (ko) | 2010-11-23 | 2012-05-31 | 삼성전자주식회사 | 커패시터 및 이를 포함하는 반도체 소자 |
| CN103189543A (zh) | 2010-11-24 | 2013-07-03 | 思诺斯技术公司 | 用于在大衬底上执行原子层沉积的具有多个分段的延伸反应器组件 |
| KR20130055694A (ko) | 2010-11-29 | 2013-05-28 | 가부시키가이샤 히다치 고쿠사이 덴키 | 반도체 장치의 제조 방법, 기판 처리 방법 및 기판 처리 장치 |
| US8288758B2 (en) | 2010-12-02 | 2012-10-16 | International Business Machines Corporation | SOI SiGe-base lateral bipolar junction transistor |
| US8183500B2 (en) | 2010-12-03 | 2012-05-22 | Uvtech Systems, Inc. | Orthogonal beam delivery system for wafer edge processing |
| CN103249858B (zh) | 2010-12-09 | 2015-06-10 | 株式会社爱发科 | 有机薄膜形成装置 |
| US20120149213A1 (en) | 2010-12-09 | 2012-06-14 | Lakshminarayana Nittala | Bottom up fill in high aspect ratio trenches |
| TWI507561B (zh) | 2010-12-10 | 2015-11-11 | Ind Tech Res Inst | 結合進氣和排氣的噴灑頭 |
| TWI488321B (zh) | 2010-12-10 | 2015-06-11 | Teijin Ltd | Semiconductor laminates, semiconductor devices, and the like |
| KR101801409B1 (ko) | 2010-12-20 | 2017-12-20 | 에베 그룹 에. 탈너 게엠베하 | 웨이퍼의 장착을 위한 수용 수단 |
| US9719169B2 (en) | 2010-12-20 | 2017-08-01 | Novellus Systems, Inc. | System and apparatus for flowable deposition in semiconductor fabrication |
| WO2012087493A2 (en) | 2010-12-20 | 2012-06-28 | Applied Materials, Inc. | In-situ low-k capping to improve integration damage resistance |
| JP5735304B2 (ja) | 2010-12-21 | 2015-06-17 | 株式会社日立国際電気 | 基板処理装置、基板の製造方法、半導体デバイスの製造方法およびガス供給管 |
| CN102094183B (zh) | 2010-12-22 | 2012-07-25 | 中国工程物理研究院激光聚变研究中心 | 冷壁间歇式反应器 |
| US8314034B2 (en) | 2010-12-23 | 2012-11-20 | Intel Corporation | Feature size reduction |
| JP2012138500A (ja) | 2010-12-27 | 2012-07-19 | Tokyo Electron Ltd | タングステン膜又は酸化タングステン膜上への酸化シリコン膜の成膜方法及び成膜装置 |
| JP5675331B2 (ja) | 2010-12-27 | 2015-02-25 | 東京エレクトロン株式会社 | トレンチの埋め込み方法 |
| US8901016B2 (en) | 2010-12-28 | 2014-12-02 | Asm Japan K.K. | Method of forming metal oxide hardmask |
| US9790594B2 (en) | 2010-12-28 | 2017-10-17 | Asm Ip Holding B.V. | Combination CVD/ALD method, source and pulse profile modification |
| JP5573666B2 (ja) | 2010-12-28 | 2014-08-20 | 東京エレクトロン株式会社 | 原料供給装置及び成膜装置 |
| US8883556B2 (en) | 2010-12-28 | 2014-11-11 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
| USD655599S1 (en) | 2010-12-29 | 2012-03-13 | Bill Durham | Wall or door mountable holder |
| FR2970110B1 (fr) | 2010-12-29 | 2013-09-06 | St Microelectronics Crolles 2 | Procede de fabrication d'une couche de dielectrique polycristalline |
| US8883269B2 (en) | 2010-12-30 | 2014-11-11 | Applied Materials, Inc. | Thin film deposition using microwave plasma |
| US8698107B2 (en) | 2011-01-10 | 2014-04-15 | Varian Semiconductor Equipment Associates, Inc. | Technique and apparatus for monitoring ion mass, energy, and angle in processing systems |
| KR101306315B1 (ko) | 2011-01-11 | 2013-09-09 | 주식회사 디엠에스 | 화학기상증착 장치 |
| JP5236755B2 (ja) | 2011-01-14 | 2013-07-17 | 東京エレクトロン株式会社 | 成膜装置及び成膜方法 |
| JP5609663B2 (ja) | 2011-01-18 | 2014-10-22 | 旭硝子株式会社 | ガラス基板保持手段、およびそれを用いたｅｕｖマスクブランクスの製造方法 |
| US20120180954A1 (en) | 2011-01-18 | 2012-07-19 | Applied Materials, Inc. | Semiconductor processing system and methods using capacitively coupled plasma |
| JP5782279B2 (ja) | 2011-01-20 | 2015-09-24 | 株式会社Ｓｃｒｅｅｎホールディングス | 基板処理方法および基板処理装置 |
| US8398773B2 (en) | 2011-01-21 | 2013-03-19 | Asm International N.V. | Thermal processing furnace and liner for the same |
| US8969823B2 (en) | 2011-01-21 | 2015-03-03 | Uchicago Argonne, Llc | Microchannel plate detector and methods for their fabrication |
| US8450191B2 (en) | 2011-01-24 | 2013-05-28 | Applied Materials, Inc. | Polysilicon films by HDP-CVD |
| US8900935B2 (en) | 2011-01-25 | 2014-12-02 | International Business Machines Corporation | Deposition on a nanowire using atomic layer deposition |
| KR20130118963A (ko) | 2011-01-26 | 2013-10-30 | 어플라이드 머티어리얼스, 인코포레이티드 | 실리콘 질화물 및 실리콘 산질화물의 플라즈마 처리 |
| US20120196242A1 (en) | 2011-01-27 | 2012-08-02 | Applied Materials, Inc. | Substrate support with heater and rapid temperature change |
| US8465811B2 (en) | 2011-01-28 | 2013-06-18 | Asm Japan K.K. | Method of depositing film by atomic layer deposition with pulse-time-modulated plasma |
| JP2012164736A (ja) | 2011-02-04 | 2012-08-30 | Hitachi Kokusai Electric Inc | 基板処理装置及び半導体装置の製造方法 |
| US20120263876A1 (en) | 2011-02-14 | 2012-10-18 | Asm Ip Holding B.V. | Deposition of silicon dioxide on hydrophobic surfaces |
| JP5982129B2 (ja) | 2011-02-15 | 2016-08-31 | 東京エレクトロン株式会社 | 電極及びプラズマ処理装置 |
| US8877300B2 (en) | 2011-02-16 | 2014-11-04 | Veeco Ald Inc. | Atomic layer deposition using radicals of gas mixture |
| US8563443B2 (en) | 2011-02-18 | 2013-10-22 | Asm Japan K.K. | Method of depositing dielectric film by ALD using precursor containing silicon, hydrocarbon, and halogen |
| US20120213947A1 (en) | 2011-02-18 | 2012-08-23 | Synos Technology, Inc. | Depositing thin layer of material on permeable substrate |
| US8329599B2 (en) | 2011-02-18 | 2012-12-11 | Asm Japan K.K. | Method of depositing dielectric film by ALD using precursor containing silicon, hydrocarbon, and halogen |
| US9163310B2 (en) | 2011-02-18 | 2015-10-20 | Veeco Ald Inc. | Enhanced deposition of layer on substrate using radicals |
| CN202259160U (zh) | 2011-02-21 | 2012-05-30 | 盛陶盟(香港)有限公司 | 陶瓷玻璃合成电极及其荧光灯 |
| US10011920B2 (en) | 2011-02-23 | 2018-07-03 | International Business Machines Corporation | Low-temperature selective epitaxial growth of silicon for device integration |
| US8574340B2 (en) | 2011-02-27 | 2013-11-05 | Board Of Trustees Of The University Of Alabama | Methods for preparing and using metal and/or metal oxide porous materials |
| JP2012195562A (ja) | 2011-02-28 | 2012-10-11 | Hitachi Kokusai Electric Inc | 異径基板用アタッチメントおよび基板処理装置ならびに基板若しくは半導体デバイスの製造方法 |
| US20120219824A1 (en) | 2011-02-28 | 2012-08-30 | Uchicago Argonne Llc | Atomic layer deposition of super-conducting niobium silicide |
| KR101847026B1 (ko) | 2011-03-01 | 2018-04-09 | 어플라이드 머티어리얼스, 인코포레이티드 | 공유된 펌프를 갖는 진공 챔버들 |
| US9017457B2 (en) | 2011-03-01 | 2015-04-28 | Exxonmobil Upstream Research Company | Apparatus and systems having a reciprocating valve head assembly and swing adsorption processes related thereto |
| US20120225191A1 (en) | 2011-03-01 | 2012-09-06 | Applied Materials, Inc. | Apparatus and Process for Atomic Layer Deposition |
| US8735299B2 (en) | 2011-03-03 | 2014-05-27 | Tokyo Electron Limited | Semiconductor device manufacturing method and computer-readable storage medium |
| US8466411B2 (en) | 2011-03-03 | 2013-06-18 | Asm Japan K.K. | Calibration method of UV sensor for UV curing |
| KR101937115B1 (ko) | 2011-03-04 | 2019-01-09 | 노벨러스 시스템즈, 인코포레이티드 | 하이브리드 세라믹 샤워헤드 |
| ITMI20110401A1 (it) | 2011-03-14 | 2012-09-15 | Petroceramics S P A | Metodo per l'infiltrazione di un materiale poroso con un secondo materiale e relativo impianto |
| US9064815B2 (en) | 2011-03-14 | 2015-06-23 | Applied Materials, Inc. | Methods for etch of metal and metal-oxide films |
| US8501605B2 (en) | 2011-03-14 | 2013-08-06 | Applied Materials, Inc. | Methods and apparatus for conformal doping |
| JP2012195513A (ja) | 2011-03-17 | 2012-10-11 | Tokyo Electron Ltd | プラズマ処理装置 |
| JP5820731B2 (ja) | 2011-03-22 | 2015-11-24 | 株式会社日立国際電気 | 基板処理装置および固体原料補充方法 |
| US9684234B2 (en) | 2011-03-24 | 2017-06-20 | Uchicago Argonne, Llc | Sequential infiltration synthesis for enhancing multiple-patterning lithography |
| US8980418B2 (en) | 2011-03-24 | 2015-03-17 | Uchicago Argonne, Llc | Sequential infiltration synthesis for advanced lithography |
| WO2012134605A1 (en) | 2011-03-25 | 2012-10-04 | Applied Materials, Inc. | Method and apparatus for thermocouple installation or replacement in a substrate support |
| CN103443901B (zh) | 2011-03-28 | 2017-09-15 | 应用材料公司 | 选择性沉积外延锗合金应力源的方法与设备 |
| JP5203482B2 (ja) | 2011-03-28 | 2013-06-05 | 株式会社小松製作所 | 加熱装置 |
| KR101303422B1 (ko) | 2011-03-28 | 2013-09-05 | 주식회사 엘지실트론 | 단결정 잉곳의 제조방법 및 이에 의해 제조된 단결정 잉곳과 웨이퍼 |
| JP5922219B2 (ja) | 2011-03-31 | 2016-05-24 | アイメックＩｍｅｃ | 単結晶スズ含有半導体材料を成長させる方法 |
| KR101200720B1 (ko) | 2011-03-31 | 2012-11-13 | 최대규 | 핫 배플판이 구비된 플라즈마 반응기 및 이를 이용한 기판 처리 방법 |
| US8569158B2 (en) | 2011-03-31 | 2013-10-29 | Tokyo Electron Limited | Method for forming ultra-shallow doping regions by solid phase diffusion |
| US8697198B2 (en) | 2011-03-31 | 2014-04-15 | Veeco Ald Inc. | Magnetic field assisted deposition |
| KR102111702B1 (ko) | 2011-04-07 | 2020-05-15 | 피코순 오와이 | 플라즈마 소오스를 갖는 원자층 퇴적 |
| US8900402B2 (en) | 2011-05-10 | 2014-12-02 | Lam Research Corporation | Semiconductor processing system having multiple decoupled plasma sources |
| US8647993B2 (en) | 2011-04-11 | 2014-02-11 | Novellus Systems, Inc. | Methods for UV-assisted conformal film deposition |
| WO2012142230A2 (en) | 2011-04-12 | 2012-10-18 | Smith James S | Air gap control systems and methods |
| US20120263887A1 (en) | 2011-04-13 | 2012-10-18 | Varian Semiconductor Equipment Associates, Inc. | Technique and apparatus for ion-assisted atomic layer deposition |
| US8371567B2 (en) | 2011-04-13 | 2013-02-12 | Novellus Systems, Inc. | Pedestal covers |
| US8298951B1 (en) | 2011-04-13 | 2012-10-30 | Asm Japan K.K. | Footing reduction using etch-selective layer |
| KR20130137043A (ko) | 2011-04-15 | 2013-12-13 | 다즈모 가부시키가이샤 | 웨이퍼 교환 장치 및 웨이퍼 지지용 핸드 |
| DE102011007632B3 (de) | 2011-04-18 | 2012-02-16 | Siltronic Ag | Verfahren und Vorrichtung zum Abscheiden einer von Prozessgas stammenden Materialschicht auf einer Substratscheibe |
| DE102011007682A1 (de) | 2011-04-19 | 2012-10-25 | Siltronic Ag | Suszeptor zum Abstützen einer Halbleiterscheibe und Verfahren zum Abscheiden einer Schicht auf einer Vorderseite einer Halbleiterscheibe |
| TW201243030A (en) | 2011-04-20 | 2012-11-01 | Applied Materials Inc | Selective silicon nitride etch |
| US20120269967A1 (en) | 2011-04-22 | 2012-10-25 | Applied Materials, Inc. | Hot Wire Atomic Layer Deposition Apparatus And Methods Of Use |
| US8871617B2 (en) | 2011-04-22 | 2014-10-28 | Asm Ip Holding B.V. | Deposition and reduction of mixed metal oxide thin films |
| US20120270384A1 (en) | 2011-04-22 | 2012-10-25 | Applied Materials, Inc. | Apparatus for deposition of materials on a substrate |
| US8492170B2 (en) | 2011-04-25 | 2013-07-23 | Applied Materials, Inc. | UV assisted silylation for recovery and pore sealing of damaged low K films |
| JP5955062B2 (ja) | 2011-04-25 | 2016-07-20 | 東京エレクトロン株式会社 | プラズマ処理装置 |
| US8592005B2 (en) | 2011-04-26 | 2013-11-26 | Asm Japan K.K. | Atomic layer deposition for controlling vertical film growth |
| USD655055S1 (en) | 2011-04-28 | 2012-02-28 | Carolyn Grace Toll | Pet outfit |
| US8927066B2 (en) | 2011-04-29 | 2015-01-06 | Applied Materials, Inc. | Method and apparatus for gas delivery |
| DE102011081749B4 (de) | 2011-04-29 | 2016-04-14 | Von Ardenne Gmbh | Substratbehandlungsanlage |
| US9165804B2 (en) | 2011-04-29 | 2015-10-20 | Applied Materials, Inc. | Methods of cooling process chamber components |
| JP5720406B2 (ja) | 2011-05-10 | 2015-05-20 | 東京エレクトロン株式会社 | ガス供給装置、熱処理装置、ガス供給方法及び熱処理方法 |
| US8746284B2 (en) | 2011-05-11 | 2014-06-10 | Intermolecular, Inc. | Apparatus and method for multiple symmetrical divisional gas distribution |
| US8809170B2 (en) | 2011-05-19 | 2014-08-19 | Asm America Inc. | High throughput cyclical epitaxial deposition and etch process |
| US9218962B2 (en) | 2011-05-19 | 2015-12-22 | Globalfoundries Inc. | Low temperature epitaxy of a semiconductor alloy including silicon and germanium employing a high order silane precursor |
| US8771807B2 (en) | 2011-05-24 | 2014-07-08 | Air Products And Chemicals, Inc. | Organoaminosilane precursors and methods for making and using same |
| JP2012244180A (ja) | 2011-05-24 | 2012-12-10 | Macronix Internatl Co Ltd | 多層接続構造及びその製造方法 |
| JP5630379B2 (ja) | 2011-05-26 | 2014-11-26 | 東京エレクトロン株式会社 | 温度測定装置、温度測定方法、記憶媒体及び熱処理装置 |
| JP5730670B2 (ja) | 2011-05-27 | 2015-06-10 | 株式会社Adeka | 酸化モリブデンを含有する薄膜の製造方法、及び酸化モリブデンを含有する薄膜の形成用原料 |
| US20120304935A1 (en) | 2011-05-31 | 2012-12-06 | Oosterlaken Theodorus G M | Bubbler assembly and method for vapor flow control |
| JP2013012719A (ja) | 2011-05-31 | 2013-01-17 | Hitachi Kokusai Electric Inc | 基板処理装置および基板処理方法 |
| KR101085980B1 (ko) | 2011-05-31 | 2011-11-22 | 주식회사 쎄믹스 | 엘리먼트 셀레늄 증기 분위기에서의 셀레나이제이션 공정에 의한 태양 전지의 광흡수층 제조 방법 및 광흡수층 제조용 열처리 장치 |
| US9136180B2 (en) | 2011-06-01 | 2015-09-15 | Asm Ip Holding B.V. | Process for depositing electrode with high effective work function |
| US8692319B2 (en) | 2011-06-03 | 2014-04-08 | Infineon Technologies Austria Ag | Lateral trench MESFET |
| US8753978B2 (en) | 2011-06-03 | 2014-06-17 | Novellus Systems, Inc. | Metal and silicon containing capping layers for interconnects |
| EP3929326A3 (en) | 2011-06-03 | 2022-03-16 | Versum Materials US, LLC | Compositions and processes for depositing carbon-doped silicon-containing films |
| US9312155B2 (en) | 2011-06-06 | 2016-04-12 | Asm Japan K.K. | High-throughput semiconductor-processing apparatus equipped with multiple dual-chamber modules |
| US8927318B2 (en) | 2011-06-14 | 2015-01-06 | International Business Machines Corporation | Spalling methods to form multi-junction photovoltaic structure |
| KR20120137986A (ko) | 2011-06-14 | 2012-12-24 | 삼성디스플레이 주식회사 | 정전척 |
| TW201308021A (zh) | 2011-06-15 | 2013-02-16 | Applied Materials Inc | 調控增強的電子自旋以控制光阻線寬粗糙度之方法與設備 |
| JP5734757B2 (ja) | 2011-06-16 | 2015-06-17 | 株式会社東芝 | 半導体装置及びその製造方法 |
| US9175392B2 (en) | 2011-06-17 | 2015-11-03 | Intermolecular, Inc. | System for multi-region processing |
| US20120318457A1 (en) | 2011-06-17 | 2012-12-20 | Son Nguyen | Materials and coatings for a showerhead in a processing system |
| US9793148B2 (en) | 2011-06-22 | 2017-10-17 | Asm Japan K.K. | Method for positioning wafers in multiple wafer transport |
| US10364496B2 (en) | 2011-06-27 | 2019-07-30 | Asm Ip Holding B.V. | Dual section module having shared and unshared mass flow controllers |
| US8450212B2 (en) | 2011-06-28 | 2013-05-28 | International Business Machines Corporation | Method of reducing critical dimension process bias differences between narrow and wide damascene wires |
| DE112012002699B4 (de) | 2011-06-28 | 2018-12-13 | Federal-Mogul Ignition Company | Zündkerze und Verfahren zum Herstellen einer Elektrode einer Zündkerze |
| US20140130687A1 (en) | 2011-07-01 | 2014-05-15 | Taiyo Chemical Industry Co., Ltd. | Primer composition, structure including primer layer composed of the composition, and method of producing the structure |
| US20140007808A1 (en) | 2011-07-05 | 2014-01-09 | Epicrew Corporation | Susceptor Device And Deposition Apparatus Having The Same |
| DE112012002871T5 (de) | 2011-07-06 | 2014-03-20 | Wayne State University | Atomlagenabscheidung von dünnen Filmen an Übergangsmetall |
| US10707082B2 (en) | 2011-07-06 | 2020-07-07 | Asm International N.V. | Methods for depositing thin films comprising indium nitride by atomic layer deposition |
| JP5377587B2 (ja) | 2011-07-06 | 2013-12-25 | 東京エレクトロン株式会社 | アンテナ、プラズマ処理装置及びプラズマ処理方法 |
| US8962400B2 (en) | 2011-07-07 | 2015-02-24 | Taiwan Semiconductor Manufacturing Company, Ltd. | In-situ doping of arsenic for source and drain epitaxy |
| US8647809B2 (en) | 2011-07-07 | 2014-02-11 | Brewer Science Inc. | Metal-oxide films from small molecules for lithographic applications |
| US20130011984A1 (en) | 2011-07-07 | 2013-01-10 | Taiwan Semiconductor Manufacturing Company, Ltd. | Using Hexachlorodisilane as a Silicon Precursor for Source/Drain Epitaxy |
| JP5755958B2 (ja) | 2011-07-08 | 2015-07-29 | 株式会社フジキン | 半導体製造装置の原料ガス供給装置 |
| US9223203B2 (en) | 2011-07-08 | 2015-12-29 | Asm International N.V. | Microcontact printed films as an activation layer for selective atomic layer deposition |
| KR20130007806A (ko) | 2011-07-11 | 2013-01-21 | 주식회사 케이씨텍 | 원자층 증착장치의 히터 모듈 |
| US20130014697A1 (en) | 2011-07-12 | 2013-01-17 | Asm Japan K.K. | Container Having Multiple Compartments Containing Liquid Material for Multiple Wafer-Processing Chambers |
| CN103620751B (zh) | 2011-07-12 | 2017-08-01 | 松下知识产权经营株式会社 | 氮化物半导体装置及其制造方法 |
| US9018567B2 (en) | 2011-07-13 | 2015-04-28 | Asm International N.V. | Wafer processing apparatus with heated, rotating substrate support |
| US10854498B2 (en) | 2011-07-15 | 2020-12-01 | Asm Ip Holding B.V. | Wafer-supporting device and method for producing same |
| JP5940342B2 (ja) | 2011-07-15 | 2016-06-29 | 東京エレクトロン株式会社 | 基板搬送装置、基板処理システムおよび基板搬送方法、ならびに記憶媒体 |
| US9630127B2 (en) | 2011-07-19 | 2017-04-25 | Hayward Industries, Inc. | Filter vessel assembly and related methods of use |
| US20130023129A1 (en) | 2011-07-20 | 2013-01-24 | Asm America, Inc. | Pressure transmitter for a semiconductor processing environment |
| US8617411B2 (en) | 2011-07-20 | 2013-12-31 | Lam Research Corporation | Methods and apparatus for atomic layer etching |
| US8741775B2 (en) | 2011-07-20 | 2014-06-03 | Applied Materials, Inc. | Method of patterning a low-K dielectric film |
| JP5789149B2 (ja) | 2011-07-21 | 2015-10-07 | Ｊｓｗアフティ株式会社 | 原子層成長方法及び原子層成長装置 |
| US8778448B2 (en) | 2011-07-21 | 2014-07-15 | International Business Machines Corporation | Method of stabilizing hydrogenated amorphous silicon and amorphous hydrogenated silicon alloys |
| WO2013016208A2 (en) | 2011-07-22 | 2013-01-31 | Applied Materials, Inc. | Reactant delivery system for ald/cvd processes |
| US8716072B2 (en) | 2011-07-25 | 2014-05-06 | International Business Machines Corporation | Hybrid CMOS technology with nanowire devices and double gated planar devices |
| KR102023754B1 (ko) | 2011-07-27 | 2019-09-20 | 더 보오드 오브 트러스티스 오브 더 유니버시티 오브 일리노이즈 | 생체분자 특성규명용 나노포어 센서 |
| US20130025538A1 (en) | 2011-07-27 | 2013-01-31 | Applied Materials, Inc. | Methods and apparatus for deposition processes |
| US8551892B2 (en) | 2011-07-27 | 2013-10-08 | Asm Japan K.K. | Method for reducing dielectric constant of film using direct plasma of hydrogen |
| US20130025786A1 (en) | 2011-07-28 | 2013-01-31 | Vladislav Davidkovich | Systems for and methods of controlling time-multiplexed deep reactive-ion etching processes |
| KR101252742B1 (ko) | 2011-08-02 | 2013-04-09 | 주식회사 유진테크 | 에피택셜 공정을 위한 반도체 제조설비 |
| KR101271248B1 (ko) | 2011-08-02 | 2013-06-07 | 주식회사 유진테크 | 에피택셜 공정을 위한 반도체 제조설비 |
| US20130032085A1 (en) | 2011-08-04 | 2013-02-07 | Applied Materials, Inc. | Plasma assisted hvpe chamber design |
| US10242890B2 (en) | 2011-08-08 | 2019-03-26 | Applied Materials, Inc. | Substrate support with heater |
| US9184100B2 (en) | 2011-08-10 | 2015-11-10 | United Microelectronics Corp. | Semiconductor device having strained fin structure and method of making the same |
| CN102931083B (zh) | 2011-08-10 | 2015-07-29 | 中芯国际集成电路制造(北京)有限公司 | 半导体器件及其制造方法 |
| US20130040481A1 (en) | 2011-08-12 | 2013-02-14 | Genesis Technology Usa, Inc. | U-Channel Coaxial F-Connector |
| WO2013027682A1 (ja) | 2011-08-19 | 2013-02-28 | 東京エレクトロン株式会社 | Ｇｅ－Ｓｂ－Ｔｅ膜の成膜方法、Ｇｅ－Ｔｅ膜の成膜方法、Ｓｂ－Ｔｅ膜の成膜方法及びプログラム |
| TWI492298B (zh) | 2011-08-26 | 2015-07-11 | Applied Materials Inc | 雙重圖案化蝕刻製程 |
| US8614047B2 (en) | 2011-08-26 | 2013-12-24 | International Business Machines Corporation | Photodecomposable bases and photoresist compositions |
| US20130048606A1 (en) | 2011-08-31 | 2013-02-28 | Zhigang Mao | Methods for in-situ chamber dry clean in photomask plasma etching processing chamber |
| KR101326518B1 (ko) | 2011-09-02 | 2013-11-07 | 엘지이노텍 주식회사 | 조명 장치 |
| JP5712874B2 (ja) | 2011-09-05 | 2015-05-07 | 東京エレクトロン株式会社 | 成膜装置、成膜方法及び記憶媒体 |
| JP2013058559A (ja) | 2011-09-07 | 2013-03-28 | Tokyo Electron Ltd | 半導体装置の製造方法及び基板処理システム |
| US10269615B2 (en) | 2011-09-09 | 2019-04-23 | Lam Research Ag | Apparatus for treating surfaces of wafer-shaped articles |
| US20130217241A1 (en) | 2011-09-09 | 2013-08-22 | Applied Materials, Inc. | Treatments for decreasing etch rates after flowable deposition of silicon-carbon-and-nitrogen-containing layers |
| US8476743B2 (en) | 2011-09-09 | 2013-07-02 | International Business Machines Corporation | C-rich carbon boron nitride dielectric films for use in electronic devices |
| US20130217243A1 (en) | 2011-09-09 | 2013-08-22 | Applied Materials, Inc. | Doping of dielectric layers |
| US20130217240A1 (en) | 2011-09-09 | 2013-08-22 | Applied Materials, Inc. | Flowable silicon-carbon-nitrogen layers for semiconductor processing |
| US20130064973A1 (en) | 2011-09-09 | 2013-03-14 | Taiwan Semiconductor Manufacturing Company, Ltd. | Chamber Conditioning Method |
| US20130217239A1 (en) | 2011-09-09 | 2013-08-22 | Applied Materials, Inc. | Flowable silicon-and-carbon-containing layers for semiconductor processing |
| JP2013062361A (ja) | 2011-09-13 | 2013-04-04 | Tokyo Electron Ltd | 熱処理装置、温度制御システム、熱処理方法、温度制御方法及びその熱処理方法又はその温度制御方法を実行させるためのプログラムを記録した記録媒体 |
| US10023954B2 (en) | 2011-09-15 | 2018-07-17 | Applied Materials, Inc. | Slit valve apparatus, systems, and methods |
| US9177872B2 (en) | 2011-09-16 | 2015-11-03 | Micron Technology, Inc. | Memory cells, semiconductor devices, systems including such cells, and methods of fabrication |
| JP1438319S (zh) | 2011-09-20 | 2015-04-06 | ||
| JP1438745S (zh) | 2011-09-20 | 2015-04-06 | ||
| US20130068970A1 (en) | 2011-09-21 | 2013-03-21 | Asm Japan K.K. | UV Irradiation Apparatus Having UV Lamp-Shared Multiple Process Stations |
| US9312335B2 (en) | 2011-09-23 | 2016-04-12 | Alpha And Omega Semiconductor Incorporated | Lateral PNP bipolar transistor with narrow trench emitter |
| KR101975071B1 (ko) | 2011-09-23 | 2019-05-03 | 노벨러스 시스템즈, 인코포레이티드 | 플라즈마 활성화된 컨포멀 유전체 막 증착 |
| JP5549655B2 (ja) | 2011-09-26 | 2014-07-16 | 株式会社安川電機 | ハンドおよびロボット |
| US9206507B2 (en) | 2011-09-27 | 2015-12-08 | L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude | Nickel bis diazabutadiene precursors, their synthesis, and their use for nickel containing films depositions |
| US8993072B2 (en) | 2011-09-27 | 2015-03-31 | Air Products And Chemicals, Inc. | Halogenated organoaminosilane precursors and methods for depositing films comprising same |
| US9048178B2 (en) | 2011-09-27 | 2015-06-02 | Tokyo Electron Limited | Plasma etching method and semiconductor device manufacturing method |
| JP5784440B2 (ja) | 2011-09-28 | 2015-09-24 | トランスフォーム・ジャパン株式会社 | 半導体装置の製造方法及び半導体装置 |
| US20130082274A1 (en) | 2011-09-29 | 2013-04-04 | Bridgelux, Inc. | Light emitting devices having dislocation density maintaining buffer layers |
| US9644796B2 (en) | 2011-09-29 | 2017-05-09 | Applied Materials, Inc. | Methods for in-situ calibration of a flow controller |
| JP6042656B2 (ja) | 2011-09-30 | 2016-12-14 | 株式会社日立国際電気 | 半導体装置の製造方法、基板処理方法、基板処理装置およびプログラム |
| US8569184B2 (en) | 2011-09-30 | 2013-10-29 | Asm Japan K.K. | Method for forming single-phase multi-element film by PEALD |
| USD709536S1 (en) | 2011-09-30 | 2014-07-22 | Tokyo Electron Limited | Focusing ring |
| USD709537S1 (en) | 2011-09-30 | 2014-07-22 | Tokyo Electron Limited | Focusing ring |
| NL2009555A (en) | 2011-10-03 | 2013-04-08 | Asml Netherlands Bv | Method to provide a patterned orientation template for a self-assemblable polymer. |
| US8849466B2 (en) | 2011-10-04 | 2014-09-30 | Mks Instruments, Inc. | Method of and apparatus for multiple channel flow ratio controller system |
| US8551891B2 (en) | 2011-10-04 | 2013-10-08 | Applied Materials, Inc. | Remote plasma burn-in |
| TW201325326A (zh) | 2011-10-05 | 2013-06-16 | Applied Materials Inc | 電漿處理設備及其基板支撐組件 |
| US9653267B2 (en) | 2011-10-06 | 2017-05-16 | Applied Materials, Inc. | Temperature controlled chamber liner |
| TWI458843B (zh) | 2011-10-06 | 2014-11-01 | Ind Tech Res Inst | 蒸鍍裝置與有機薄膜的形成方法 |
| KR101969611B1 (ko) | 2011-10-07 | 2019-04-16 | 도쿄엘렉트론가부시키가이샤 | 플라즈마 처리 장치 |
| US8808563B2 (en) | 2011-10-07 | 2014-08-19 | Applied Materials, Inc. | Selective etch of silicon by way of metastable hydrogen termination |
| WO2013055798A1 (en) | 2011-10-10 | 2013-04-18 | Brewer Science Inc. | Spin-on carbon compositions for lithographic processing |
| US9281231B2 (en) | 2011-10-12 | 2016-03-08 | Ferrotec (Usa) Corporation | Non-contact magnetic drive assembly with mechanical stop elements |
| JP6202798B2 (ja) | 2011-10-12 | 2017-09-27 | エーエスエム インターナショナル エヌ．ヴェー．Ａｓｍ Ｉｎｔｅｒｎａｔｉｏｎａｌ Ｎ．Ｖ． | 酸化アンチモン膜の原子層堆積 |
| US8637930B2 (en) | 2011-10-13 | 2014-01-28 | International Business Machines Company | FinFET parasitic capacitance reduction using air gap |
| TWI541928B (zh) | 2011-10-14 | 2016-07-11 | 晶元光電股份有限公司 | 晶圓載具 |
| US20130092085A1 (en) | 2011-10-17 | 2013-04-18 | Synos Technology, Inc. | Linear atomic layer deposition apparatus |
| US8759234B2 (en) | 2011-10-17 | 2014-06-24 | Taiwan Semiconductor Manufacturing Company, Ltd. | Deposited material and method of formation |
| US9109754B2 (en) | 2011-10-19 | 2015-08-18 | Applied Materials, Inc. | Apparatus and method for providing uniform flow of gas |
| USD695240S1 (en) | 2011-10-20 | 2013-12-10 | Tokyo Electron Limited | Arm for wafer transportation for manufacturing semiconductor |
| US20130099318A1 (en) | 2011-10-25 | 2013-04-25 | International Business Machines Corporation | Thin semiconductor-on-insulator mosfet with co-integrated silicon, silicon germanium and silicon doped with carbon channels |
| US9096931B2 (en) | 2011-10-27 | 2015-08-04 | Asm America, Inc | Deposition valve assembly and method of heating the same |
| US9341296B2 (en) | 2011-10-27 | 2016-05-17 | Asm America, Inc. | Heater jacket for a fluid line |
| WO2013063260A1 (en) | 2011-10-28 | 2013-05-02 | Applied Materials, Inc. | High temperature tungsten metallization process |
| US9017481B1 (en) | 2011-10-28 | 2015-04-28 | Asm America, Inc. | Process feed management for semiconductor substrate processing |
| US11085112B2 (en) | 2011-10-28 | 2021-08-10 | Asm Ip Holding B.V. | Susceptor with ring to limit backside deposition |
| US9574268B1 (en) | 2011-10-28 | 2017-02-21 | Asm America, Inc. | Pulsed valve manifold for atomic layer deposition |
| US20130107415A1 (en) | 2011-10-28 | 2013-05-02 | Applied Materials, Inc. | Electrostatic chuck |
| US20130113085A1 (en) | 2011-11-04 | 2013-05-09 | Applied Materials, Inc. | Atomic Layer Deposition Of Films Using Precursors Containing Hafnium Or Zirconium |
| TWI541377B (zh) | 2011-11-04 | 2016-07-11 | Ａｓｍ國際股份有限公司 | 形成摻雜二氧化矽薄膜的方法 |
| US8927428B2 (en) | 2011-11-04 | 2015-01-06 | E I Du Pont De Nemours And Company | Process of forming an aluminum p-doped surface region of an n-doped semiconductor substrate |
| US8927059B2 (en) | 2011-11-08 | 2015-01-06 | Applied Materials, Inc. | Deposition of metal films using alane-based precursors |
| CN102352492A (zh) | 2011-11-10 | 2012-02-15 | 中微半导体设备(上海)有限公司 | 一种带冷却系统的气体注入装置 |
| JP5527490B2 (ja) | 2011-11-11 | 2014-06-18 | 東京エレクトロン株式会社 | プラズマ処理装置用誘電体窓、およびプラズマ処理装置 |
| US20130122712A1 (en) | 2011-11-14 | 2013-05-16 | Jong Mun Kim | Method of etching high aspect ratio features in a dielectric layer |
| US20130119018A1 (en) | 2011-11-15 | 2013-05-16 | Keren Jacobs Kanarik | Hybrid pulsing plasma processing systems |
| WO2013075061A1 (en) | 2011-11-17 | 2013-05-23 | United Protective Technologies | Carbon based coatings and methods of producing the same |
| JP6592243B2 (ja) | 2011-11-21 | 2019-10-16 | ブルーワー サイエンス アイ エヌ シー． | Ｅｕｖリソグラフィのためのアシスト層 |
| JP6038043B2 (ja) | 2011-11-21 | 2016-12-07 | 株式会社日立国際電気 | 基板処理装置、半導体装置の製造方法及びプログラム |
| US8609519B2 (en) | 2011-11-22 | 2013-12-17 | Intermolecular, Inc. | Combinatorial approach for screening of ALD film stacks |
| US9005539B2 (en) | 2011-11-23 | 2015-04-14 | Asm Ip Holding B.V. | Chamber sealing member |
| US9167625B2 (en) | 2011-11-23 | 2015-10-20 | Asm Ip Holding B.V. | Radiation shielding for a substrate holder |
| US10276410B2 (en) | 2011-11-25 | 2019-04-30 | Nhk Spring Co., Ltd. | Substrate support device |
| JP5694129B2 (ja) | 2011-11-29 | 2015-04-01 | 株式会社東芝 | 半導体装置及びその製造方法 |
| JP5921168B2 (ja) | 2011-11-29 | 2016-05-24 | 株式会社日立国際電気 | 基板処理装置 |
| US8633115B2 (en) | 2011-11-30 | 2014-01-21 | Applied Materials, Inc. | Methods for atomic layer etching |
| US20130143415A1 (en) | 2011-12-01 | 2013-06-06 | Applied Materials, Inc. | Multi-Component Film Deposition |
| US20140306250A1 (en) | 2011-12-01 | 2014-10-16 | Quarkstar Llc | Solid-state lighting device and method of manufacturing same |
| JP6034156B2 (ja) | 2011-12-05 | 2016-11-30 | 東京エレクトロン株式会社 | プラズマ処理装置及びプラズマ処理方法 |
| US8663977B2 (en) | 2011-12-07 | 2014-03-04 | Intermolecular, Inc. | Vertically retractable flow cell system |
| AU2012347103B2 (en) | 2011-12-07 | 2016-09-01 | Panasonic Intellectual Property Management Co., Ltd. | Niobium nitride and method for producing same, niobium nitride-containing film and method for producing same, semiconductor, semiconductor device, photocatalyst, hydrogen generation device, and energy system |
| JP6049395B2 (ja) | 2011-12-09 | 2016-12-21 | 株式会社日立国際電気 | 半導体装置の製造方法、基板処理方法、基板処理装置およびプログラム |
| US9112003B2 (en) | 2011-12-09 | 2015-08-18 | Asm International N.V. | Selective formation of metallic films on metallic surfaces |
| AU340167S (en) | 2011-12-09 | 2012-01-06 | Hunter Pacific Int Pty Ltd | Electrical connector |
| AU340165S (en) | 2011-12-09 | 2012-01-06 | Hunter Pacific Int Pty Ltd | Electrical connector |
| JP6046052B2 (ja) | 2011-12-12 | 2016-12-14 | 東京エレクトロン株式会社 | プラズマ発生用アンテナ、プラズマ処理装置及びプラズマ処理方法 |
| US20130147050A1 (en) | 2011-12-12 | 2013-06-13 | Advanced Cooling Technologies, Inc. | Semiconductor having integrally-formed enhanced thermal management |
| KR101347962B1 (ko) | 2011-12-13 | 2014-01-08 | 주식회사 케이씨텍 | 박막의 특성 향상을 위한 원자층 증착방법 |
| KR20130067600A (ko) | 2011-12-14 | 2013-06-25 | 주식회사 케이씨텍 | 다이렉트 플라즈마 형성 원자층 증착장치 |
| CN104115270B (zh) | 2011-12-14 | 2017-12-08 | 英特尔公司 | 具有包含多个金属氧化物层的绝缘体堆叠体的金属‑绝缘体‑金属(mim)电容器 |
| US8979559B2 (en) | 2011-12-14 | 2015-03-17 | Cooper Technologies Company | Lockout tagout plug sleeve |
| WO2013087797A1 (en) | 2011-12-16 | 2013-06-20 | Element Six Limited | Large area optical quality synthetic polycrystalline diamond window |
| US20130157409A1 (en) | 2011-12-16 | 2013-06-20 | Kaushik Vaidya | Selective atomic layer deposition of passivation layers for silicon-based photovoltaic devices |
| KR101891458B1 (ko) | 2011-12-20 | 2018-08-24 | 인텔 코포레이션 | Iii-v 반도체 재료 층을 갖는 반도체 디바이스 |
| USD691974S1 (en) | 2011-12-22 | 2013-10-22 | Tokyo Electron Limited | Holding pad for transferring a wafer |
| WO2013095651A1 (en) | 2011-12-23 | 2013-06-27 | Intel Corporation | Non-planar gate all-around device and method of fabrication thereof |
| KR101427726B1 (ko) | 2011-12-27 | 2014-08-07 | 가부시키가이샤 히다치 고쿠사이 덴키 | 기판 처리 장치 및 반도체 장치의 제조 방법 |
| US9388492B2 (en) | 2011-12-27 | 2016-07-12 | Asm America, Inc. | Vapor flow control apparatus for atomic layer deposition |
| US20130161629A1 (en) | 2011-12-27 | 2013-06-27 | Applied Materials, Inc. | Zero shrinkage smooth interface oxy-nitride and oxy-amorphous-silicon stacks for 3d memory vertical gate application |
| JP5679581B2 (ja) | 2011-12-27 | 2015-03-04 | 東京エレクトロン株式会社 | 成膜方法 |
| US8883028B2 (en) | 2011-12-28 | 2014-11-11 | Lam Research Corporation | Mixed mode pulsing etching in plasma processing systems |
| KR20130076979A (ko) | 2011-12-29 | 2013-07-09 | 삼성전자주식회사 | 반도체 소자 및 이의 제조방법 |
| CN102505114A (zh) | 2012-01-03 | 2012-06-20 | 西安电子科技大学 | 基于Ni膜辅助退火的SiC衬底上石墨烯制备方法 |
| CN102539019B (zh) | 2012-01-05 | 2013-09-25 | 北京东方计量测试研究所 | 空间真空环境下的温度测量与校准平台 |
| TW201330086A (zh) | 2012-01-05 | 2013-07-16 | Duan-Ren Yu | 蝕刻裝置 |
| US8659066B2 (en) | 2012-01-06 | 2014-02-25 | International Business Machines Corporation | Integrated circuit with a thin body field effect transistor and capacitor |
| KR20140110080A (ko) | 2012-01-09 | 2014-09-16 | 어플라이드 머티어리얼스, 인코포레이티드 | 열화를 방지하기 위해 ｕｖ 챔버 광학 컴포넌트들을 시즈닝하기 위한 방법 |
| USD676943S1 (en) | 2012-01-11 | 2013-02-26 | Bill Kluss | Pipe end cap |
| US20130183814A1 (en) | 2012-01-13 | 2013-07-18 | Applied Materials, Inc. | Method of depositing a silicon germanium tin layer on a substrate |
| US20140030447A1 (en) | 2012-01-17 | 2014-01-30 | Synos Technology, Inc. | Deposition of Graphene or Conjugated Carbons Using Radical Reactor |
| US10838123B2 (en) | 2012-01-19 | 2020-11-17 | Supriya Jaiswal | Materials, components, and methods for use with extreme ultraviolet radiation in lithography and other applications |
| US8592328B2 (en) | 2012-01-20 | 2013-11-26 | Novellus Systems, Inc. | Method for depositing a chlorine-free conformal sin film |
| USD665055S1 (en) | 2012-01-24 | 2012-08-07 | Asm Ip Holding B.V. | Shower plate |
| US20130189635A1 (en) | 2012-01-25 | 2013-07-25 | First Solar, Inc. | Method and apparatus providing separate modules for processing a substrate |
| JP2013151720A (ja) | 2012-01-25 | 2013-08-08 | Ulvac Japan Ltd | 真空成膜装置 |
| JP5601331B2 (ja) | 2012-01-26 | 2014-10-08 | 株式会社安川電機 | ロボットハンドおよびロボット |
| KR20130086806A (ko) | 2012-01-26 | 2013-08-05 | 삼성전자주식회사 | 박막 증착 장치 |
| WO2013112702A1 (en) | 2012-01-26 | 2013-08-01 | Applied Materials, Inc. | Devices including metal-silicon contacts using indium arsenide films and apparatus and methods |
| US9466524B2 (en) | 2012-01-31 | 2016-10-11 | Applied Materials, Inc. | Method of depositing metals using high frequency plasma |
| US9177826B2 (en) | 2012-02-02 | 2015-11-03 | Globalfoundries Inc. | Methods of forming metal nitride materials |
| US8784676B2 (en) | 2012-02-03 | 2014-07-22 | Lam Research Corporation | Waferless auto conditioning |
| US8721833B2 (en) | 2012-02-05 | 2014-05-13 | Tokyo Electron Limited | Variable capacitance chamber component incorporating ferroelectric materials and methods of manufacturing and using thereof |
| US9238865B2 (en) | 2012-02-06 | 2016-01-19 | Asm Ip Holding B.V. | Multiple vapor sources for vapor deposition |
| USD698904S1 (en) | 2012-02-08 | 2014-02-04 | Asm Ip Holding B.V. | Vacuum flange ring |
| US8728955B2 (en) | 2012-02-14 | 2014-05-20 | Novellus Systems, Inc. | Method of plasma activated deposition of a conformal film on a substrate surface |
| KR101928356B1 (ko) | 2012-02-16 | 2018-12-12 | 엘지이노텍 주식회사 | 반도체 제조 장치 |
| FI123320B (en) | 2012-02-17 | 2013-02-28 | Beneq Oy | Nozzle and nozzle head |
| US8686386B2 (en) | 2012-02-17 | 2014-04-01 | Sandisk 3D Llc | Nonvolatile memory device using a varistor as a current limiter element |
| JP5912637B2 (ja) | 2012-02-17 | 2016-04-27 | 東京エレクトロン株式会社 | 半導体装置の製造方法 |
| CN104115257A (zh) | 2012-02-21 | 2014-10-22 | 应用材料公司 | 原子层沉积光刻技术 |
| US20130224964A1 (en) | 2012-02-28 | 2013-08-29 | Asm Ip Holding B.V. | Method for Forming Dielectric Film Containing Si-C bonds by Atomic Layer Deposition Using Precursor Containing Si-C-Si bond |
| CN103295867B (zh) | 2012-02-29 | 2016-12-28 | 细美事有限公司 | 等离子体边界限制器单元和用于处理基板的设备 |
| US9291063B2 (en) | 2012-02-29 | 2016-03-22 | Siemens Energy, Inc. | Mid-section of a can-annular gas turbine engine with an improved rotation of air flow from the compressor to the turbine |
| US9162209B2 (en) | 2012-03-01 | 2015-10-20 | Novellus Systems, Inc. | Sequential cascading of reaction volumes as a chemical reuse strategy |
| US9202727B2 (en) | 2012-03-02 | 2015-12-01 | ASM IP Holding | Susceptor heater shim |
| US8846536B2 (en) | 2012-03-05 | 2014-09-30 | Novellus Systems, Inc. | Flowable oxide film with tunable wet etch rate |
| JP6159536B2 (ja) | 2012-03-05 | 2017-07-05 | 株式会社日立国際電気 | 基板処理装置、基板処理装置の保守方法及び移載方法並びにプログラム |
| US8785285B2 (en) | 2012-03-08 | 2014-07-22 | Taiwan Semiconductor Manufacturing Company, Ltd. | Semiconductor devices and methods of manufacture thereof |
| WO2013134661A1 (en) | 2012-03-09 | 2013-09-12 | Air Products And Chemicals, Inc. | Barrier materials for display devices |
| JP6092902B2 (ja) | 2012-03-09 | 2017-03-08 | エア プロダクツ アンド ケミカルズ インコーポレイテッドＡｉｒ Ｐｒｏｄｕｃｔｓ Ａｎｄ Ｃｈｅｍｉｃａｌｓ Ｉｎｃｏｒｐｏｒａｔｅｄ | 薄膜トランジスター機器上にケイ素含有膜を製造する方法 |
| WO2013137115A1 (ja) | 2012-03-15 | 2013-09-19 | 東京エレクトロン株式会社 | 成膜方法及び成膜装置 |
| US8912101B2 (en) | 2012-03-15 | 2014-12-16 | Asm Ip Holding B.V. | Method for forming Si-containing film using two precursors by ALD |
| US8902428B2 (en) | 2012-03-15 | 2014-12-02 | Applied Materials, Inc. | Process and apparatus for measuring the crystal fraction of crystalline silicon casted mono wafers |
| JP5547763B2 (ja) | 2012-03-16 | 2014-07-16 | 三井造船株式会社 | プラズマ生成方法、この方法を用いた薄膜形成方法及びプラズマ生成装置 |
| US9057388B2 (en) | 2012-03-21 | 2015-06-16 | International Business Machines Corporation | Vacuum trap |
| USD715410S1 (en) | 2012-03-21 | 2014-10-14 | Blucher Metal A/S | Roof drain |
| SG11201405417YA (en) | 2012-03-23 | 2014-10-30 | Picosun Oy | Atomic layer deposition method and apparatuses |
| US9682398B2 (en) | 2012-03-30 | 2017-06-20 | Applied Materials, Inc. | Substrate processing system having susceptorless substrate support with enhanced substrate heating control |
| US9082684B2 (en) | 2012-04-02 | 2015-07-14 | Applied Materials, Inc. | Method of epitaxial doped germanium tin alloy formation |
| US8946830B2 (en) | 2012-04-04 | 2015-02-03 | Asm Ip Holdings B.V. | Metal oxide protective layer for a semiconductor device |
| US9982340B2 (en) | 2012-04-04 | 2018-05-29 | Taiwan Semiconductor Manufacturing Co. Ltd. | Shower head apparatus and method for controlling plasma or gas distribution |
| GB201206096D0 (en) | 2012-04-05 | 2012-05-16 | Dyson Technology Ltd | Atomic layer deposition |
| US9460912B2 (en) | 2012-04-12 | 2016-10-04 | Air Products And Chemicals, Inc. | High temperature atomic layer deposition of silicon oxide thin films |
| US8853070B2 (en) | 2012-04-13 | 2014-10-07 | Oti Lumionics Inc. | Functionalization of a substrate |
| US9698386B2 (en) | 2012-04-13 | 2017-07-04 | Oti Lumionics Inc. | Functionalization of a substrate |
| US9484233B2 (en) | 2012-04-13 | 2016-11-01 | Novellus Systems, Inc. | Carousel reactor for multi-station, sequential processing systems |
| JP6284925B2 (ja) | 2012-04-16 | 2018-02-28 | ブルーワー サイエンス アイ エヌ シー． | 誘導自己組織化用のケイ素系ハードマスク層 |
| US20130269612A1 (en) | 2012-04-16 | 2013-10-17 | Hermes-Epitek Corporation | Gas Treatment Apparatus with Surrounding Spray Curtains |
| US8535767B1 (en) | 2012-04-18 | 2013-09-17 | Asm Ip Holding B.V. | Method for repairing damage of dielectric film by hydrocarbon restoration and hydrocarbon depletion using UV irradiation |
| KR102104688B1 (ko) | 2012-04-19 | 2020-05-29 | 인테벡, 인코포레이티드 | 태양 전지 제조를 위한 이중 마스크 장치 |
| US10679883B2 (en) | 2012-04-19 | 2020-06-09 | Intevac, Inc. | Wafer plate and mask arrangement for substrate fabrication |
| US20130280891A1 (en) | 2012-04-20 | 2013-10-24 | Yihwan Kim | Method and apparatus for germanium tin alloy formation by thermal cvd |
| US8937800B2 (en) | 2012-04-24 | 2015-01-20 | Applied Materials, Inc. | Electrostatic chuck with advanced RF and temperature uniformity |
| TWI554636B (zh) | 2012-04-25 | 2016-10-21 | 應用材料股份有限公司 | 由金屬脒鹽前驅物製造介電膜的方法 |
| US8741723B2 (en) | 2012-04-25 | 2014-06-03 | Globalfoundries Inc. | Methods of forming self-aligned contacts for a semiconductor device |
| US8647439B2 (en) | 2012-04-26 | 2014-02-11 | Applied Materials, Inc. | Method of epitaxial germanium tin alloy surface preparation |
| US10062600B2 (en) | 2012-04-26 | 2018-08-28 | Intevac, Inc. | System and method for bi-facial processing of substrates |
| CN104582863B (zh) | 2012-04-26 | 2016-09-21 | 因特瓦克公司 | 用于真空处理的系统结构 |
| US20130288485A1 (en) | 2012-04-30 | 2013-10-31 | Applied Materials, Inc. | Densification for flowable films |
| TWI622664B (zh) | 2012-05-02 | 2018-05-01 | Ａｓｍ智慧財產控股公司 | 相穩定薄膜，包括該薄膜之結構及裝置，及其形成方法 |
| US8728832B2 (en) | 2012-05-07 | 2014-05-20 | Asm Ip Holdings B.V. | Semiconductor device dielectric interface layer |
| JP2013235912A (ja) | 2012-05-08 | 2013-11-21 | Tokyo Electron Ltd | 被処理基体をエッチングする方法、及びプラズマエッチング装置 |
| TWI522490B (zh) | 2012-05-10 | 2016-02-21 | 應用材料股份有限公司 | 利用微波電漿化學氣相沈積在基板上沈積膜的方法 |
| US20130302520A1 (en) | 2012-05-11 | 2013-11-14 | Kai-An Wang | Co-evaporation system comprising vapor pre-mixer |
| US8853826B2 (en) | 2012-05-14 | 2014-10-07 | Taiwan Semiconductor Manufacturing Company, Ltd. | Methods and apparatus for bipolar junction transistors and resistors |
| SG195501A1 (en) | 2012-05-18 | 2013-12-30 | Novellus Systems Inc | Conformal doping via plasma activated atomic layer deposition and conformal film deposition |
| US20130312663A1 (en) | 2012-05-22 | 2013-11-28 | Applied Microstructures, Inc. | Vapor Delivery Apparatus |
| US8846543B2 (en) | 2012-05-24 | 2014-09-30 | Jinhong Tong | Methods of atomic layer deposition of hafnium oxide / erbium oxide bi-layer as advanced gate dielectrics |
| TW201410688A (zh) | 2012-05-25 | 2014-03-16 | Air Liquide | 用於蒸氣沈積之含鋯前驅物 |
| US9984906B2 (en) | 2012-05-25 | 2018-05-29 | Tokyo Electron Limited | Plasma processing device and plasma processing method |
| US20130320429A1 (en) | 2012-05-31 | 2013-12-05 | Asm Ip Holding B.V. | Processes and structures for dopant profile control in epitaxial trench fill |
| US8785215B2 (en) | 2012-05-31 | 2014-07-22 | Asm Ip Holding B.V. | Method for repairing damage of dielectric film by cyclic processes |
| US9978585B2 (en) | 2012-06-01 | 2018-05-22 | Versum Materials Us, Llc | Organoaminodisilane precursors and methods for depositing films comprising same |
| US9337018B2 (en) | 2012-06-01 | 2016-05-10 | Air Products And Chemicals, Inc. | Methods for depositing films with organoaminodisilane precursors |
| US8900886B2 (en) | 2012-06-01 | 2014-12-02 | Taiwan Semiconductor Manufacturing Co., Ltd. | System and method of monitoring and controlling atomic layer deposition of tungsten |
| JP5920242B2 (ja) | 2012-06-02 | 2016-05-18 | 東京エレクトロン株式会社 | 成膜方法及び成膜装置 |
| TWI565825B (zh) | 2012-06-07 | 2017-01-11 | 索泰克公司 | 沉積系統之氣體注入組件及相關使用方法 |
| DE112013002823T5 (de) | 2012-06-07 | 2015-03-19 | Soitec | Gaseinspritzkomponenten für Abscheidungssysteme, Abscheidungssysteme mit derartigen Komponenten und dazugehörige Verfahren |
| US20130330911A1 (en) | 2012-06-08 | 2013-12-12 | Yi-Chiau Huang | Method of semiconductor film stabilization |
| US8722546B2 (en) | 2012-06-11 | 2014-05-13 | Asm Ip Holding B.V. | Method for forming silicon-containing dielectric film by cyclic deposition with side wall coverage control |
| USD723330S1 (en) | 2012-06-11 | 2015-03-03 | Barry Dean York | Debris mask and basin |
| US10325773B2 (en) | 2012-06-12 | 2019-06-18 | Novellus Systems, Inc. | Conformal deposition of silicon carbide films |
| US9984866B2 (en) | 2012-06-12 | 2018-05-29 | Component Re-Engineering Company, Inc. | Multiple zone heater |
| US8728938B2 (en) | 2012-06-13 | 2014-05-20 | Ostendo Technologies, Inc. | Method for substrate pretreatment to achieve high-quality III-nitride epitaxy |
| CN104379808A (zh) | 2012-06-15 | 2015-02-25 | 皮考逊公司 | 通过原子层沉积来涂覆衬底卷式基材 |
| US20130337653A1 (en) | 2012-06-15 | 2013-12-19 | Asm Ip Holding B.V. | Semiconductor processing apparatus with compact free radical source |
| US20130337172A1 (en) | 2012-06-19 | 2013-12-19 | Synos Technology, Inc. | Reactor in deposition device with multi-staged purging structure |
| DE102012210332A1 (de) | 2012-06-19 | 2013-12-19 | Osram Opto Semiconductors Gmbh | Ald-beschichtungsanlage |
| US8962078B2 (en) | 2012-06-22 | 2015-02-24 | Tokyo Electron Limited | Method for depositing dielectric films |
| JP6233306B2 (ja) | 2012-06-22 | 2017-11-22 | 日本電気株式会社 | スイッチング素子およびスイッチング素子の製造方法 |
| CN103515222A (zh) | 2012-06-25 | 2014-01-15 | 中芯国际集成电路制造(上海)有限公司 | 顶层金属层沟槽的刻蚀方法 |
| JP2014007289A (ja) | 2012-06-25 | 2014-01-16 | Tokyo Electron Ltd | ガス供給装置及び成膜装置 |
| US8933375B2 (en) | 2012-06-27 | 2015-01-13 | Asm Ip Holding B.V. | Susceptor heater and method of heating a substrate |
| US10233541B2 (en) | 2012-06-29 | 2019-03-19 | Applied Materials, Inc. | Deposition of films containing alkaline earth metals |
| US10535735B2 (en) | 2012-06-29 | 2020-01-14 | Intel Corporation | Contact resistance reduced P-MOS transistors employing Ge-rich contact layer |
| TWD157605S (zh) | 2012-07-04 | 2013-12-01 | 中磊電子股份有限公司 | 做為微型基地台的多模組化組合之通訊裝置 |
| US9145612B2 (en) | 2012-07-06 | 2015-09-29 | Applied Materials, Inc. | Deposition of N-metal films comprising aluminum alloys |
| US9023737B2 (en) | 2012-07-11 | 2015-05-05 | Asm Ip Holding B.V. | Method for forming conformal, homogeneous dielectric film by cyclic deposition and heat treatment |
| US9630284B2 (en) | 2012-07-12 | 2017-04-25 | Lincoln Global, Inc. | Configurable welding table and force indicating clamp |
| SG11201407907XA (en) | 2012-07-13 | 2015-01-29 | Gallium Entpr Pty Ltd | Apparatus and method for film formation |
| US8784950B2 (en) | 2012-07-16 | 2014-07-22 | Asm Ip Holding B.V. | Method for forming aluminum oxide film using Al compound containing alkyl group and alkoxy or alkylamine group |
| US9243325B2 (en) | 2012-07-18 | 2016-01-26 | Rohm And Haas Electronic Materials Llc | Vapor delivery device, methods of manufacture and methods of use thereof |
| JP6242026B2 (ja) | 2012-07-20 | 2017-12-06 | レール・リキード−ソシエテ・アノニム・プール・レテュード・エ・レクスプロワタシオン・デ・プロセデ・ジョルジュ・クロード | Ａｌｄ／ｃｖｄシリコン含有膜用のオルガノシラン前駆体 |
| US9928987B2 (en) | 2012-07-20 | 2018-03-27 | Applied Materials, Inc. | Inductively coupled plasma source with symmetrical RF feed |
| US10170279B2 (en) | 2012-07-20 | 2019-01-01 | Applied Materials, Inc. | Multiple coil inductively coupled plasma source with offset frequencies and double-walled shielding |
| US20140023794A1 (en) | 2012-07-23 | 2014-01-23 | Maitreyee Mahajani | Method And Apparatus For Low Temperature ALD Deposition |
| JP5947138B2 (ja) | 2012-07-25 | 2016-07-06 | 東京エレクトロン株式会社 | 成膜装置 |
| US9558931B2 (en) | 2012-07-27 | 2017-01-31 | Asm Ip Holding B.V. | System and method for gas-phase sulfur passivation of a semiconductor surface |
| US9911676B2 (en) | 2012-07-27 | 2018-03-06 | Asm Ip Holding B.V. | System and method for gas-phase passivation of a semiconductor surface |
| CN103578906B (zh) | 2012-07-31 | 2016-04-27 | 细美事有限公司 | 用于处理基板的装置 |
| US9117866B2 (en) | 2012-07-31 | 2015-08-25 | Asm Ip Holding B.V. | Apparatus and method for calculating a wafer position in a processing chamber under process conditions |
| US20140034632A1 (en) | 2012-08-01 | 2014-02-06 | Heng Pan | Apparatus and method for selective oxidation at lower temperature using remote plasma source |
| US8911826B2 (en) | 2012-08-02 | 2014-12-16 | Asm Ip Holding B.V. | Method of parallel shift operation of multiple reactors |
| TWM446412U (zh) | 2012-08-06 | 2013-02-01 | Boogang Semiconductor Co Ltd | 易清潔的排氣環 |
| CN104768574B (zh) | 2012-08-07 | 2017-12-22 | 麻省理工学院 | 抗登革病毒抗体和其用途 |
| US9514932B2 (en) | 2012-08-08 | 2016-12-06 | Applied Materials, Inc. | Flowable carbon for semiconductor processing |
| US8664627B1 (en) | 2012-08-08 | 2014-03-04 | Asm Ip Holding B.V. | Method for supplying gas with flow rate gradient over substrate |
| US8912070B2 (en) | 2012-08-16 | 2014-12-16 | The Institute of Microelectronics Chinese Academy of Science | Method for manufacturing semiconductor device |
| WO2014027472A1 (ja) | 2012-08-17 | 2014-02-20 | 株式会社Ihi | 耐熱複合材料の製造方法及び製造装置 |
| US9707530B2 (en) | 2012-08-21 | 2017-07-18 | Uop Llc | Methane conversion apparatus and process using a supersonic flow reactor |
| US9370757B2 (en) | 2012-08-21 | 2016-06-21 | Uop Llc | Pyrolytic reactor |
| JP2015529395A (ja) | 2012-08-23 | 2015-10-05 | アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ | Ｕｖチャンバを洗浄するための方法及びハードウェア |
| USD693200S1 (en) | 2012-08-28 | 2013-11-12 | Lee Valley Tools, Ltd. | Bench stop |
| US9659799B2 (en) | 2012-08-28 | 2017-05-23 | Asm Ip Holding B.V. | Systems and methods for dynamic semiconductor process scheduling |
| US9169975B2 (en) | 2012-08-28 | 2015-10-27 | Asm Ip Holding B.V. | Systems and methods for mass flow controller verification |
| JP2014049529A (ja) | 2012-08-30 | 2014-03-17 | Tokyo Electron Ltd | プラズマ処理装置及び金属の酸化膜を洗浄する方法 |
| US8859368B2 (en) | 2012-09-04 | 2014-10-14 | Globalfoundries Inc. | Semiconductor device incorporating a multi-function layer into gate stacks |
| US8742668B2 (en) | 2012-09-05 | 2014-06-03 | Asm Ip Holdings B.V. | Method for stabilizing plasma ignition |
| US9171715B2 (en) | 2012-09-05 | 2015-10-27 | Asm Ip Holding B.V. | Atomic layer deposition of GeO2 |
| US8651788B1 (en) | 2012-09-06 | 2014-02-18 | Horst Budde | Variable-length, adjustable spacer |
| SG11201501144TA (en) | 2012-09-07 | 2015-04-29 | Applied Materials Inc | Integrated processing of porous dielectric, polymer-coated substrates and epoxy within a multi-chamber vacuum system confirmation |
| KR20140033911A (ko) | 2012-09-11 | 2014-03-19 | 에이에스엠 아이피 홀딩 비.브이. | 증착 장치 및 증착 방법 |
| US9021985B2 (en) | 2012-09-12 | 2015-05-05 | Asm Ip Holdings B.V. | Process gas management for an inductively-coupled plasma deposition reactor |
| JP5882167B2 (ja) | 2012-09-13 | 2016-03-09 | 東京エレクトロン株式会社 | 熱処理装置 |
| US20140077240A1 (en) | 2012-09-17 | 2014-03-20 | Radek Roucka | Iv material photonic device on dbr |
| JP6022274B2 (ja) | 2012-09-18 | 2016-11-09 | 株式会社日立国際電気 | 半導体装置の製造方法、基板処理装置およびプログラム |
| WO2014046729A1 (en) | 2012-09-19 | 2014-03-27 | Apjet, Inc. | Atmospheric-pressure plasma processing apparatus and method |
| JP6136613B2 (ja) | 2012-09-21 | 2017-05-31 | 東京エレクトロン株式会社 | プラズマ処理方法 |
| US20140099794A1 (en) | 2012-09-21 | 2014-04-10 | Applied Materials, Inc. | Radical chemistry modulation and control using multiple flow pathways |
| US8921207B2 (en) | 2012-09-24 | 2014-12-30 | Asm Ip Holding B.V., Inc. | Tin precursors for vapor deposition and deposition processes |
| US9076674B2 (en) | 2012-09-25 | 2015-07-07 | Intermolecular, Inc. | Method and apparatus for improving particle performance |
| US9324811B2 (en) | 2012-09-26 | 2016-04-26 | Asm Ip Holding B.V. | Structures and devices including a tensile-stressed silicon arsenic layer and methods of forming same |
| JP6042160B2 (ja) | 2012-10-03 | 2016-12-14 | 東京エレクトロン株式会社 | 成膜方法及び成膜装置 |
| US20140099798A1 (en) | 2012-10-05 | 2014-04-10 | Asm Ip Holding B.V. | UV-Curing Apparatus Provided With Wavelength-Tuned Excimer Lamp and Method of Processing Semiconductor Substrate Using Same |
| US9353441B2 (en) | 2012-10-05 | 2016-05-31 | Asm Ip Holding B.V. | Heating/cooling pedestal for semiconductor-processing apparatus |
| US10714315B2 (en) | 2012-10-12 | 2020-07-14 | Asm Ip Holdings B.V. | Semiconductor reaction chamber showerhead |
| JP2014086472A (ja) | 2012-10-19 | 2014-05-12 | Sinfonia Technology Co Ltd | クランプ装置及びワーク搬送ロボット |
| US9064948B2 (en) | 2012-10-22 | 2015-06-23 | Globalfoundries Inc. | Methods of forming a semiconductor device with low-k spacers and the resulting device |
| US9018639B2 (en) | 2012-10-26 | 2015-04-28 | Dow Corning Corporation | Flat SiC semiconductor substrate |
| US9230815B2 (en) | 2012-10-26 | 2016-01-05 | Appled Materials, Inc. | Methods for depositing fluorine/carbon-free conformal tungsten |
| US20140120678A1 (en) | 2012-10-29 | 2014-05-01 | Matheson Tri-Gas | Methods for Selective and Conformal Epitaxy of Highly Doped Si-containing Materials for Three Dimensional Structures |
| CN103794458B (zh) | 2012-10-29 | 2016-12-21 | 中微半导体设备(上海)有限公司 | 用于等离子体处理腔室内部的部件及制造方法 |
| US8939781B2 (en) | 2012-10-31 | 2015-01-27 | International Business Machines Corporation | Implementing reconfigurable power connector for multiple wiring configurations |
| US20140116335A1 (en) | 2012-10-31 | 2014-05-01 | Asm Ip Holding B.V. | UV Irradiation Apparatus with Cleaning Mechanism and Method for Cleaning UV Irradiation Apparatus |
| JP5960028B2 (ja) | 2012-10-31 | 2016-08-02 | 東京エレクトロン株式会社 | 熱処理装置 |
| US9330899B2 (en) | 2012-11-01 | 2016-05-03 | Asm Ip Holding B.V. | Method of depositing thin film |
| US8821985B2 (en) | 2012-11-02 | 2014-09-02 | Intermolecular, Inc. | Method and apparatus for high-K gate performance improvement and combinatorial processing |
| JP6538300B2 (ja) | 2012-11-08 | 2019-07-03 | ノベラス・システムズ・インコーポレーテッドＮｏｖｅｌｌｕｓ Ｓｙｓｔｅｍｓ Ｉｎｃｏｒｐｏｒａｔｅｄ | 感受性基材上にフィルムを蒸着するための方法 |
| US9105587B2 (en) | 2012-11-08 | 2015-08-11 | Micron Technology, Inc. | Methods of forming semiconductor structures with sulfur dioxide etch chemistries |
| US20150291830A1 (en) | 2012-11-16 | 2015-10-15 | Liquipel Ip Llc | Apparatus and methods for plasma enhanced chemical vapor deposition of polymer coatings |
| US20140141674A1 (en) | 2012-11-16 | 2014-05-22 | Liquipel IP, LLC | Apparatus and methods for plasma enhanced chemical vapor deposition of dielectric/polymer coatings |
| US8784951B2 (en) | 2012-11-16 | 2014-07-22 | Asm Ip Holding B.V. | Method for forming insulation film using non-halide precursor having four or more silicons |
| USD693782S1 (en) | 2012-11-19 | 2013-11-19 | Epicrew Corporation | Lid for epitaxial growing device |
| KR102116469B1 (ko) | 2012-11-20 | 2020-05-29 | 삼성디스플레이 주식회사 | 터치 패널 표시 장치 |
| US9190486B2 (en) | 2012-11-20 | 2015-11-17 | Globalfoundries Inc. | Integrated circuits and methods for fabricating integrated circuits with reduced parasitic capacitance |
| US20140145332A1 (en) | 2012-11-26 | 2014-05-29 | Globalfoundries Inc. | Methods of forming graphene liners and/or cap layers on copper-based conductive structures |
| US8973524B2 (en) | 2012-11-27 | 2015-03-10 | Intermolecular, Inc. | Combinatorial spin deposition |
| US20150292088A1 (en) | 2012-11-27 | 2015-10-15 | Claudio Canizares | Deposition systems having interchangeable gas injectors and related methods |
| US9146551B2 (en) | 2012-11-29 | 2015-09-29 | Asm Ip Holding B.V. | Scheduler for processing system |
| CN102983093B (zh) | 2012-12-03 | 2016-04-20 | 安徽三安光电有限公司 | 一种用于led外延晶圆制程的石墨承载盘 |
| KR102046976B1 (ko) | 2012-12-04 | 2019-12-02 | 삼성전자주식회사 | 반도체 메모리 장치 및 그 제조 방법 |
| US9362092B2 (en) | 2012-12-07 | 2016-06-07 | LGS Innovations LLC | Gas dispersion disc assembly |
| JP6071514B2 (ja) | 2012-12-12 | 2017-02-01 | 東京エレクトロン株式会社 | 静電チャックの改質方法及びプラズマ処理装置 |
| US9123577B2 (en) | 2012-12-12 | 2015-09-01 | Sandisk Technologies Inc. | Air gap isolation in non-volatile memory using sacrificial films |
| US9023438B2 (en) | 2012-12-17 | 2015-05-05 | Intermolecular, Inc. | Methods and apparatus for combinatorial PECVD or PEALD |
| JP6017396B2 (ja) | 2012-12-18 | 2016-11-02 | 東京エレクトロン株式会社 | 薄膜形成方法および薄膜形成装置 |
| WO2014094103A1 (en) | 2012-12-18 | 2014-06-26 | Seastar Chemicals Inc. | Process and method for in-situ dry cleaning of thin film deposition reactors and thin film layers |
| US9064857B2 (en) | 2012-12-19 | 2015-06-23 | Taiwan Semiconductor Manufacturing Company, Ltd. | N metal for FinFET |
| US9640416B2 (en) | 2012-12-26 | 2017-05-02 | Asm Ip Holding B.V. | Single-and dual-chamber module-attachable wafer-handling chamber |
| KR101950349B1 (ko) | 2012-12-26 | 2019-02-20 | 에스케이하이닉스 주식회사 | 보이드 프리 폴리실리콘 갭필 방법 및 그를 이용한 반도체장치 제조 방법 |
| WO2014103850A1 (ja) | 2012-12-27 | 2014-07-03 | 住友化学株式会社 | オキシムの製造方法 |
| GB201223473D0 (en) | 2012-12-28 | 2013-02-13 | Faradion Ltd | Metal-containing compounds |
| US20140182053A1 (en) | 2012-12-29 | 2014-07-03 | Alexander Yeh Industry Co., Ltd. | Pullable drain plug |
| EP2750167A1 (en) | 2012-12-31 | 2014-07-02 | Imec | Method for tuning the effective work function of a gate structure in a semiconductor device |
| US9090972B2 (en) | 2012-12-31 | 2015-07-28 | Lam Research Corporation | Gas supply systems for substrate processing chambers and methods therefor |
| US9583363B2 (en) | 2012-12-31 | 2017-02-28 | Sunedison Semiconductor Limited (Uen201334164H) | Processes and apparatus for preparing heterostructures with reduced strain by radial distension |
| US20140186544A1 (en) | 2013-01-02 | 2014-07-03 | Applied Materials, Inc. | Metal processing using high density plasma |
| KR20140089793A (ko) | 2013-01-07 | 2014-07-16 | 에스케이하이닉스 주식회사 | 반도체 장치 및 그 제조 방법 |
| CN103014846A (zh) | 2013-01-14 | 2013-04-03 | 东莞市中镓半导体科技有限公司 | 一种材料气相外延用同心圆环喷头结构 |
| US10358718B2 (en) | 2013-01-16 | 2019-07-23 | Universiteit Gent | Methods for obtaining hydrophilic fluoropolymers |
| US8853039B2 (en) | 2013-01-17 | 2014-10-07 | Taiwan Semiconductor Manufacturing Company, Ltd. | Defect reduction for formation of epitaxial layer in source and drain regions |
| KR102097109B1 (ko) | 2013-01-21 | 2020-04-10 | 에이에스엠 아이피 홀딩 비.브이. | 증착 장치 |
| CN103972132B (zh) | 2013-01-24 | 2017-07-11 | 东京毅力科创株式会社 | 基板处理装置和载置台 |
| US9018093B2 (en) | 2013-01-25 | 2015-04-28 | Asm Ip Holding B.V. | Method for forming layer constituted by repeated stacked layers |
| KR20140095738A (ko) | 2013-01-25 | 2014-08-04 | 삼성전자주식회사 | 트랜지스터 및 그 제조 방법 |
| US9314854B2 (en) | 2013-01-30 | 2016-04-19 | Lam Research Corporation | Ductile mode drilling methods for brittle components of plasma processing apparatuses |
| US8894870B2 (en) | 2013-02-01 | 2014-11-25 | Asm Ip Holding B.V. | Multi-step method and apparatus for etching compounds containing a metal |
| US20160376700A1 (en) | 2013-02-01 | 2016-12-29 | Asm Ip Holding B.V. | System for treatment of deposition reactor |
| JP5335155B1 (ja) | 2013-02-04 | 2013-11-06 | 善郎 水野 | 温度計の管理システム |
| US9399228B2 (en) | 2013-02-06 | 2016-07-26 | Novellus Systems, Inc. | Method and apparatus for purging and plasma suppression in a process chamber |
| EP2765218A1 (en) | 2013-02-07 | 2014-08-13 | Nederlandse Organisatie voor toegepast-natuurwetenschappelijk Onderzoek TNO | Method and apparatus for depositing atomic layers on a substrate |
| US9184045B2 (en) | 2013-02-08 | 2015-11-10 | Taiwan Semiconductor Manufacturing Co., Ltd. | Bottom-up PEALD process |
| US10256079B2 (en) | 2013-02-08 | 2019-04-09 | Applied Materials, Inc. | Semiconductor processing systems having multiple plasma configurations |
| US9758866B2 (en) | 2013-02-13 | 2017-09-12 | Wayne State University | Synthesis and characterization of first row transition metal complexes containing α-imino alkoxides as precursors for deposition of metal films |
| KR20140102782A (ko) | 2013-02-14 | 2014-08-25 | 삼성전자주식회사 | 웨이퍼 이송용 블레이드 및 이를 포함하는 웨이퍼 이송 장치 |
| TWI624560B (zh) | 2013-02-18 | 2018-05-21 | 應用材料股份有限公司 | 用於原子層沉積的氣體分配板及原子層沉積系統 |
| US8932923B2 (en) | 2013-02-19 | 2015-01-13 | Globalfoundries Inc. | Semiconductor gate structure for threshold voltage modulation and method of making same |
| FR3002241B1 (fr) | 2013-02-21 | 2015-11-20 | Altatech Semiconductor | Dispositif de depot chimique en phase vapeur |
| US20140234466A1 (en) | 2013-02-21 | 2014-08-21 | HGST Netherlands B.V. | Imprint mold and method for making using sidewall spacer line doubling |
| US8623770B1 (en) | 2013-02-21 | 2014-01-07 | HGST Netherlands B.V. | Method for sidewall spacer line doubling using atomic layer deposition of a titanium oxide |
| TW201437423A (zh) | 2013-02-21 | 2014-10-01 | Applied Materials Inc | 用於注射器至基板的空隙控制之裝置及方法 |
| JP5934665B2 (ja) | 2013-02-22 | 2016-06-15 | 東京エレクトロン株式会社 | 成膜方法、プログラム、コンピュータ記憶媒体及び成膜システム |
| US9304396B2 (en) | 2013-02-25 | 2016-04-05 | Lam Research Corporation | PECVD films for EUV lithography |
| JP5717888B2 (ja) | 2013-02-25 | 2015-05-13 | 東京エレクトロン株式会社 | プラズマ処理装置 |
| TWI615497B (zh) | 2013-02-28 | 2018-02-21 | 應用材料股份有限公司 | 金屬胺化物沉積前驅物及具有惰性安瓿襯裡之該前驅物的穩定化 |
| US9449795B2 (en) | 2013-02-28 | 2016-09-20 | Novellus Systems, Inc. | Ceramic showerhead with embedded RF electrode for capacitively coupled plasma reactor |
| USD743357S1 (en) | 2013-03-01 | 2015-11-17 | Asm Ip Holding B.V. | Susceptor |
| US8790743B1 (en) | 2013-03-04 | 2014-07-29 | Asm Ip Holding B.V. | Method for controlling cyclic plasma-assisted process |
| US9593410B2 (en) | 2013-03-05 | 2017-03-14 | Applied Materials, Inc. | Methods and apparatus for stable substrate processing with multiple RF power supplies |
| USD751555S1 (en) | 2013-03-05 | 2016-03-15 | Japan Electronic Materials Corp. | Probe card case |
| TWD164568S (zh) | 2013-03-05 | 2014-12-01 | 東京威力科創股份有限公司 | 探針卡盒 |
| US9633889B2 (en) | 2013-03-06 | 2017-04-25 | Applied Materials, Inc. | Substrate support with integrated vacuum and edge purge conduits |
| US9484191B2 (en) | 2013-03-08 | 2016-11-01 | Asm Ip Holding B.V. | Pulsed remote plasma method and system |
| CN105190847A (zh) | 2013-03-08 | 2015-12-23 | 应用材料公司 | 具有适于保护抵抗氟等离子体的保护涂层的腔室部件 |
| US20150218700A1 (en) | 2013-03-08 | 2015-08-06 | Applied Materials, Inc. | Chamber component with protective coating suitable for protection against flourine plasma |
| USD723153S1 (en) | 2013-03-08 | 2015-02-24 | Olen Borkholder | Recess ceiling fan bezel |
| USD702188S1 (en) | 2013-03-08 | 2014-04-08 | Asm Ip Holding B.V. | Thermocouple |
| US10170282B2 (en) | 2013-03-08 | 2019-01-01 | Applied Materials, Inc. | Insulated semiconductor faceplate designs |
| US9589770B2 (en) | 2013-03-08 | 2017-03-07 | Asm Ip Holding B.V. | Method and systems for in-situ formation of intermediate reactive species |
| US8933528B2 (en) | 2013-03-11 | 2015-01-13 | International Business Machines Corporation | Semiconductor fin isolation by a well trapping fin portion |
| US9312222B2 (en) | 2013-03-12 | 2016-04-12 | Taiwan Semiconductor Manufacturing Co., Ltd. | Patterning approach for improved via landing profile |
| US9543147B2 (en) | 2013-03-12 | 2017-01-10 | Taiwan Semiconductor Manufacturing Company, Ltd. | Photoresist and method of manufacture |
| US20140262028A1 (en) | 2013-03-13 | 2014-09-18 | Intermolecular, Inc. | Non-Contact Wet-Process Cell Confining Liquid to a Region of a Solid Surface by Differential Pressure |
| US20140264444A1 (en) | 2013-03-13 | 2014-09-18 | International Business Machines Corporation | Stress-enhancing selective epitaxial deposition of embedded source and drain regions |
| KR101317942B1 (ko) | 2013-03-13 | 2013-10-16 | (주)테키스트 | 반도체 제조용 척의 에지링 냉각모듈 |
| US8846550B1 (en) | 2013-03-14 | 2014-09-30 | Asm Ip Holding B.V. | Silane or borane treatment of metal thin films |
| US20140273534A1 (en) | 2013-03-14 | 2014-09-18 | Tokyo Electron Limited | Integration of absorption based heating bake methods into a photolithography track system |
| CN105027316B (zh) | 2013-03-14 | 2018-07-17 | 应用材料公司 | 薄膜封装-用于oled应用的薄超高阻挡层 |
| US9824881B2 (en) | 2013-03-14 | 2017-11-21 | Asm Ip Holding B.V. | Si precursors for deposition of SiN at low temperatures |
| WO2014159427A1 (en) | 2013-03-14 | 2014-10-02 | Applied Materials, Inc | Resist hardening and development processes for semiconductor device manufacturing |
| US9309978B2 (en) | 2013-03-14 | 2016-04-12 | Dresser-Rand Company | Low head to stem ratio poppet valve |
| US20140273531A1 (en) | 2013-03-14 | 2014-09-18 | Asm Ip Holding B.V. | Si PRECURSORS FOR DEPOSITION OF SiN AT LOW TEMPERATURES |
| US8841182B1 (en) | 2013-03-14 | 2014-09-23 | Asm Ip Holding B.V. | Silane and borane treatments for titanium carbide films |
| US9564309B2 (en) | 2013-03-14 | 2017-02-07 | Asm Ip Holding B.V. | Si precursors for deposition of SiN at low temperatures |
| US9991153B2 (en) | 2013-03-14 | 2018-06-05 | Applied Materials, Inc. | Substrate support bushing |
| WO2014158253A2 (en) | 2013-03-14 | 2014-10-02 | Applied Materials, Inc. | Thermal treated sandwich structure layer to improve adhesive strength |
| US9556507B2 (en) | 2013-03-14 | 2017-01-31 | Applied Materials, Inc. | Yttria-based material coated chemical vapor deposition chamber heater |
| TWI627305B (zh) | 2013-03-15 | 2018-06-21 | 應用材料股份有限公司 | 用於轉盤處理室之具有剛性板的大氣蓋 |
| US9666702B2 (en) | 2013-03-15 | 2017-05-30 | Matthew H. Kim | Advanced heterojunction devices and methods of manufacturing advanced heterojunction devices |
| US9564348B2 (en) | 2013-03-15 | 2017-02-07 | Applied Materials, Inc. | Shutter blade and robot blade with CTE compensation |
| KR102146501B1 (ko) | 2013-03-15 | 2020-08-20 | 어플라이드 머티어리얼스, 인코포레이티드 | 프로세싱 챔버에서 튜닝 전극을 사용하여 플라즈마 프로파일을 튜닝하기 위한 장치 및 방법 |
| MX2015013113A (es) | 2013-03-15 | 2016-08-03 | Prime Group Alliance Llc | Motor de combustion interna de piston opuesto con sellado de capa no viscosa. |
| WO2014140672A1 (en) | 2013-03-15 | 2014-09-18 | L'air Liquide, Societe Anonyme Pour I'etude Et I'exploitation Des Procedes Georges Claude | Bis(alkylimido)-bis(alkylamido)molybdenum molecules for deposition of molybdenum-containing films |
| US9355876B2 (en) | 2013-03-15 | 2016-05-31 | Applied Materials, Inc. | Process load lock apparatus, lift assemblies, electronic device processing systems, and methods of processing substrates in load lock locations |
| US20140273530A1 (en) | 2013-03-15 | 2014-09-18 | Victor Nguyen | Post-Deposition Treatment Methods For Silicon Nitride |
| US9721784B2 (en) | 2013-03-15 | 2017-08-01 | Applied Materials, Inc. | Ultra-conformal carbon film deposition |
| US8984962B2 (en) | 2013-03-15 | 2015-03-24 | H. Aaron Christmann | Rotatable torque-measuring apparatus and method |
| JP5864637B2 (ja) | 2013-03-19 | 2016-02-17 | 株式会社日立国際電気 | 半導体装置の製造方法、基板処理装置、プログラム及び記録媒体 |
| JP6096547B2 (ja) | 2013-03-21 | 2017-03-15 | 東京エレクトロン株式会社 | プラズマ処理装置及びシャワープレート |
| JP5386046B1 (ja) | 2013-03-27 | 2014-01-15 | エピクルー株式会社 | サセプタ支持部およびこのサセプタ支持部を備えるエピタキシャル成長装置 |
| USD734377S1 (en) | 2013-03-28 | 2015-07-14 | Hirata Corporation | Top cover of a load lock chamber |
| JP6115244B2 (ja) | 2013-03-28 | 2017-04-19 | 東京エレクトロン株式会社 | 成膜装置 |
| JP6107327B2 (ja) | 2013-03-29 | 2017-04-05 | 東京エレクトロン株式会社 | 成膜装置及びガス供給装置並びに成膜方法 |
| JP6134191B2 (ja) | 2013-04-07 | 2017-05-24 | 村川 惠美 | 回転型セミバッチａｌｄ装置 |
| KR101390474B1 (ko) | 2013-04-08 | 2014-05-07 | 주식회사 유진테크 | 기판처리장치 |
| US9142437B2 (en) | 2013-04-10 | 2015-09-22 | Globalfoundries Inc. | System for separately handling different size FOUPs |
| US8864202B1 (en) | 2013-04-12 | 2014-10-21 | Varian Semiconductor Equipment Associates, Inc. | Spring retained end effector contact pad |
| FR3004712B1 (fr) | 2013-04-19 | 2015-05-08 | Herakles | Procede de fabrication de materiau composite a matrice carbure |
| JP2014216647A (ja) | 2013-04-29 | 2014-11-17 | エーエスエムアイピー ホールディング ビー．ブイ． | 金属ドープされた抵抗切り替え層を有する抵抗変化型メモリを製造する方法 |
| US8956939B2 (en) | 2013-04-29 | 2015-02-17 | Asm Ip Holding B.V. | Method of making a resistive random access memory device |
| CN106169415B (zh) | 2013-05-03 | 2020-02-14 | 应用材料公司 | 用于多图案化应用的光调谐硬掩模 |
| JP6068255B2 (ja) | 2013-05-13 | 2017-01-25 | 大陽日酸株式会社 | 気相成長装置および気相成長装置の部材搬送方法 |
| USD766849S1 (en) | 2013-05-15 | 2016-09-20 | Ebara Corporation | Substrate retaining ring |
| US9252024B2 (en) | 2013-05-17 | 2016-02-02 | Applied Materials, Inc. | Deposition chambers with UV treatment and methods of use |
| JP2014229680A (ja) | 2013-05-21 | 2014-12-08 | ピーエスフォー ルクスコ エスエイアールエルＰＳ４ Ｌｕｘｃｏ Ｓ．ａ．ｒ．ｌ． | 半導体装置及びその製造方法 |
| US9299837B2 (en) | 2013-05-22 | 2016-03-29 | Globalfoundries Inc. | Integrated circuit having MOSFET with embedded stressor and method to fabricate same |
| US9365924B2 (en) | 2013-05-23 | 2016-06-14 | Asm Ip Holding B.V. | Method for forming film by plasma-assisted deposition using two-frequency combined pulsed RF power |
| US9142393B2 (en) | 2013-05-23 | 2015-09-22 | Asm Ip Holding B.V. | Method for cleaning reaction chamber using pre-cleaning process |
| US8900467B1 (en) | 2013-05-25 | 2014-12-02 | HGST Netherlands B.V. | Method for making a chemical contrast pattern using block copolymers and sequential infiltration synthesis |
| USD726365S1 (en) | 2013-05-29 | 2015-04-07 | Sis Resources Ltd. | Mouthpiece plug for electronic cigarette |
| WO2014194176A1 (en) | 2013-05-30 | 2014-12-04 | Knowles Capital Formation Inc. | Wireless culinary probe calibration method and system |
| US9552979B2 (en) | 2013-05-31 | 2017-01-24 | Asm Ip Holding B.V. | Cyclic aluminum nitride deposition in a batch reactor |
| US9605736B1 (en) | 2013-05-31 | 2017-03-28 | Rct Systems, Inc. | High temperature electromagnetic actuator |
| TWI609991B (zh) | 2013-06-05 | 2018-01-01 | 維克儀器公司 | 具有熱一致性改善特色的晶圓舟盒 |
| US8895395B1 (en) | 2013-06-06 | 2014-11-25 | International Business Machines Corporation | Reduced resistance SiGe FinFET devices and method of forming same |
| US9245740B2 (en) | 2013-06-07 | 2016-01-26 | Dnf Co., Ltd. | Amino-silyl amine compound, method for preparing the same and silicon-containing thin-film using the same |
| US9117657B2 (en) | 2013-06-07 | 2015-08-25 | Asm Ip Holding B.V. | Method for filling recesses using pre-treatment with hydrocarbon-containing gas |
| CN104233226B (zh) | 2013-06-09 | 2017-06-06 | 北京北方微电子基地设备工艺研究中心有限责任公司 | 一种原子层沉积设备 |
| US9123510B2 (en) | 2013-06-12 | 2015-09-01 | ASM IP Holding, B.V. | Method for controlling in-plane uniformity of substrate processed by plasma-assisted process |
| KR101718869B1 (ko) | 2013-06-14 | 2017-04-04 | 비코 에이엘디 인코포레이티드 | 스캐닝 반응기를 이용한 대형 기판상 원자 층 증착의 수행 |
| US20140367043A1 (en) | 2013-06-17 | 2014-12-18 | Applied Materials, Inc. | Method for fast and repeatable plasma ignition and tuning in plasma chambers |
| USD794185S1 (en) | 2013-06-17 | 2017-08-08 | Q-Med Ab | Syringe part |
| CN104244620B (zh) | 2013-06-19 | 2017-05-31 | 上海微电子装备有限公司 | 一种大型半导体设备集约型装配柜体 |
| CN106847924B (zh) | 2013-06-20 | 2021-03-30 | 英特尔公司 | 具有掺杂的子鳍片区域的非平面半导体器件及其制造方法 |
| CN105164791A (zh) | 2013-06-26 | 2015-12-16 | 应用材料公司 | 沉积金属合金膜的方法 |
| CN105408983B (zh) | 2013-06-26 | 2018-06-22 | 北京七星华创电子股份有限公司 | 一种垂直无旋处理腔室 |
| US20150004798A1 (en) | 2013-06-28 | 2015-01-01 | Lam Research Corporation | Chemical deposition chamber having gas seal |
| US9343317B2 (en)* | 2013-07-01 | 2016-05-17 | Micron Technology, Inc. | Methods of forming silicon-containing dielectric materials and semiconductor device structures |
| CN105518838B (zh) | 2013-07-02 | 2019-11-26 | 雅达公司 | 使用快速热加工形成异质外延层以除去晶格位错 |
| US9677176B2 (en) | 2013-07-03 | 2017-06-13 | Novellus Systems, Inc. | Multi-plenum, dual-temperature showerhead |
| US9490149B2 (en) | 2013-07-03 | 2016-11-08 | Lam Research Corporation | Chemical deposition apparatus having conductance control |
| US20150010381A1 (en) | 2013-07-08 | 2015-01-08 | United Microelectronics Corp. | Wafer processing chamber and method for transferring wafer in the same |
| USD705745S1 (en) | 2013-07-08 | 2014-05-27 | Witricity Corporation | Printed resonator coil |
| JP5861676B2 (ja) | 2013-07-08 | 2016-02-16 | 株式会社安川電機 | 吸着構造、ロボットハンドおよびロボット |
| US8993054B2 (en) | 2013-07-12 | 2015-03-31 | Asm Ip Holding B.V. | Method and system to reduce outgassing in a reaction chamber |
| US9099423B2 (en) | 2013-07-12 | 2015-08-04 | Asm Ip Holding B.V. | Doped semiconductor films and processing |
| US8940646B1 (en) | 2013-07-12 | 2015-01-27 | Lam Research Corporation | Sequential precursor dosing in an ALD multi-station/batch reactor |
| US20150020848A1 (en) | 2013-07-19 | 2015-01-22 | Lam Research Corporation | Systems and Methods for In-Situ Wafer Edge and Backside Plasma Cleaning |
| JP6116425B2 (ja) | 2013-07-19 | 2017-04-19 | 大陽日酸株式会社 | 金属薄膜の製膜方法 |
| US9018111B2 (en) | 2013-07-22 | 2015-04-28 | Asm Ip Holding B.V. | Semiconductor reaction chamber with plasma capabilities |
| JP6087236B2 (ja) | 2013-07-24 | 2017-03-01 | 東京エレクトロン株式会社 | 成膜方法 |
| US20150030766A1 (en) | 2013-07-25 | 2015-01-29 | Novellus Systems, Inc. | Pedestal bottom clean for improved fluorine utilization and integrated symmetric foreline |
| US9994954B2 (en) | 2013-07-26 | 2018-06-12 | Versum Materials Us, Llc | Volatile dihydropyrazinly and dihydropyrazine metal complexes |
| US9663546B2 (en) | 2013-07-26 | 2017-05-30 | President And Fellows Of Harvard College | Metal amides of cyclic amines |
| CN104342637B (zh) | 2013-07-26 | 2017-02-15 | 北京北方微电子基地设备工艺研究中心有限责任公司 | 一种原子层沉积设备 |
| GB201313850D0 (en) | 2013-08-02 | 2013-09-18 | Johnson Matthey Plc | Getter composition |
| US9099393B2 (en) | 2013-08-05 | 2015-08-04 | International Business Machines Corporation | Enabling enhanced reliability and mobility for replacement gate planar and FinFET structures |
| USD784276S1 (en) | 2013-08-06 | 2017-04-18 | Applied Materials, Inc. | Susceptor assembly |
| US8986562B2 (en) | 2013-08-07 | 2015-03-24 | Ultratech, Inc. | Methods of laser processing photoresist in a gaseous environment |
| US9396934B2 (en) | 2013-08-14 | 2016-07-19 | Asm Ip Holding B.V. | Methods of forming films including germanium tin and structures and devices including the films |
| US9793115B2 (en) | 2013-08-14 | 2017-10-17 | Asm Ip Holding B.V. | Structures and devices including germanium-tin films and methods of forming same |
| US8900999B1 (en) | 2013-08-16 | 2014-12-02 | Applied Materials, Inc. | Low temperature high pressure high H2/WF6 ratio W process for 3D NAND application |
| WO2015026230A1 (en) | 2013-08-19 | 2015-02-26 | Asm Ip Holding B.V. | Twin-assembly of diverging semiconductor processing systems |
| US9209033B2 (en) | 2013-08-21 | 2015-12-08 | Tel Epion Inc. | GCIB etching method for adjusting fin height of finFET devices |
| JP6689020B2 (ja) | 2013-08-21 | 2020-04-28 | 東京エレクトロン株式会社 | プラズマ処理装置 |
| US9190263B2 (en) | 2013-08-22 | 2015-11-17 | Asm Ip Holding B.V. | Method for forming SiOCH film using organoaminosilane annealing |
| US9310684B2 (en) | 2013-08-22 | 2016-04-12 | Inpria Corporation | Organometallic solution based high resolution patterning compositions |
| GB2517697A (en) | 2013-08-27 | 2015-03-04 | Ibm | Compound semiconductor structure |
| US20150064361A1 (en)* | 2013-09-04 | 2015-03-05 | Intermolecular Inc. | UV treatment for ALD film densification |
| US9136108B2 (en) | 2013-09-04 | 2015-09-15 | Asm Ip Holding B.V. | Method for restoring porous surface of dielectric layer by UV light-assisted ALD |
| US9484199B2 (en) | 2013-09-06 | 2016-11-01 | Applied Materials, Inc. | PECVD microcrystalline silicon germanium (SiGe) |
| JP6338462B2 (ja) | 2013-09-11 | 2018-06-06 | 東京エレクトロン株式会社 | プラズマ処理装置 |
| USD716742S1 (en) | 2013-09-13 | 2014-11-04 | Asm Ip Holding B.V. | Substrate supporter for semiconductor deposition apparatus |
| USD724553S1 (en) | 2013-09-13 | 2015-03-17 | Asm Ip Holding B.V. | Substrate supporter for semiconductor deposition apparatus |
| US10312127B2 (en) | 2013-09-16 | 2019-06-04 | Applied Materials, Inc. | Compliant robot blade for defect reduction |
| US9284642B2 (en) | 2013-09-19 | 2016-03-15 | Asm Ip Holding B.V. | Method for forming oxide film by plasma-assisted processing |
| US10453675B2 (en) | 2013-09-20 | 2019-10-22 | Versum Materials Us, Llc | Organoaminosilane precursors and methods for depositing films comprising same |
| US8969169B1 (en) | 2013-09-20 | 2015-03-03 | Intermolecular, Inc. | DRAM MIM capacitor using non-noble electrodes |
| US9378971B1 (en) | 2014-12-04 | 2016-06-28 | Lam Research Corporation | Technique to deposit sidewall passivation for high aspect ratio cylinder etch |
| US8900951B1 (en) | 2013-09-24 | 2014-12-02 | International Business Machines Corporation | Gate-all-around nanowire MOSFET and method of formation |
| WO2015047832A1 (en) | 2013-09-26 | 2015-04-02 | Veeco Ald Inc. | Printing of colored pattern using atommic layer deposition |
| US9202738B2 (en) | 2013-09-26 | 2015-12-01 | Applied Materials, Inc. | Pneumatic end effector apparatus and substrate transportation systems with annular flow channel |
| US9018103B2 (en) | 2013-09-26 | 2015-04-28 | Lam Research Corporation | High aspect ratio etch with combination mask |
| US9240412B2 (en) | 2013-09-27 | 2016-01-19 | Asm Ip Holding B.V. | Semiconductor structure and device and methods of forming same using selective epitaxial process |
| SG11201602301WA (en) | 2013-09-27 | 2016-04-28 | Antonio Sanchez | Amine substituted trisilylamine and tridisilylamine compounds |
| USD756929S1 (en) | 2013-09-30 | 2016-05-24 | Danfoss A/S | Electrical connector for refrigeration valve |
| CN105493248B (zh) | 2013-09-30 | 2018-04-10 | 株式会社日立国际电气 | 半导体器件的制造方法、衬底处理装置、衬底处理系统及记录介质 |
| TWI649803B (zh) | 2013-09-30 | 2019-02-01 | 蘭姆研究公司 | 具有電漿輔助式原子層沉積及電漿輔助式化學氣相沉積合成法之深寬比可變的特徵物之間隙填充 |
| US9905415B2 (en) | 2013-10-03 | 2018-02-27 | Versum Materials Us, Llc | Methods for depositing silicon nitride films |
| US9396986B2 (en) | 2013-10-04 | 2016-07-19 | Taiwan Semiconductor Manufacturing Company, Ltd. | Mechanism of forming a trench structure |
| JP6267080B2 (ja) | 2013-10-07 | 2018-01-24 | 東京エレクトロン株式会社 | シリコン窒化物膜の成膜方法および成膜装置 |
| US9556516B2 (en) | 2013-10-09 | 2017-01-31 | ASM IP Holding B.V | Method for forming Ti-containing film by PEALD using TDMAT or TDEAT |
| KR20160045784A (ko) | 2013-10-15 | 2016-04-27 | 비코 에이엘디 인코포레이티드 | 시드 전구체를 이용한 고속 원자층 증착 공정 |
| US9576790B2 (en) | 2013-10-16 | 2017-02-21 | Asm Ip Holding B.V. | Deposition of boron and carbon containing materials |
| US10214817B2 (en) | 2013-10-16 | 2019-02-26 | The Board Of Trustees Of The University Of Illinois | Multi-metal films, alternating film multilayers, formation methods and deposition system |
| US9034717B2 (en) | 2013-10-16 | 2015-05-19 | Taiwan Semiconductor Manufacturing Company Limited | Semiconductor-on-insulator structure and method of fabricating the same |
| KR101557016B1 (ko) | 2013-10-17 | 2015-10-05 | 주식회사 유진테크 | 기판 처리장치 |
| US20150111374A1 (en) | 2013-10-18 | 2015-04-23 | International Business Machines Corporation | Surface treatment in a dep-etch-dep process |
| JP5847783B2 (ja) | 2013-10-21 | 2016-01-27 | 株式会社日立国際電気 | 半導体装置の製造方法、基板処理装置、プログラム及び記録媒体 |
| US9145607B2 (en) | 2013-10-22 | 2015-09-29 | Lam Research Corporation | Tandem source activation for cyclical deposition of films |
| US20150118863A1 (en) | 2013-10-25 | 2015-04-30 | Lam Research Corporation | Methods and apparatus for forming flowable dielectric films having low porosity |
| US9343308B2 (en) | 2013-10-28 | 2016-05-17 | Asm Ip Holding B.V. | Method for trimming carbon-containing film at reduced trimming rate |
| KR102134200B1 (ko) | 2013-10-28 | 2020-07-15 | 메르크 파텐트 게엠베하 | 아미도이민 리간드를 포함하는 금속 착물 |
| KR20150050638A (ko) | 2013-10-29 | 2015-05-11 | 에이에스엠 아이피 홀딩 비.브이. | 증착 장치 |
| US9029272B1 (en) | 2013-10-31 | 2015-05-12 | Asm Ip Holding B.V. | Method for treating SiOCH film with hydrogen plasma |
| TW201522696A (zh) | 2013-11-01 | 2015-06-16 | Applied Materials Inc | 使用遠端電漿ｃｖｄ技術的低溫氮化矽膜 |
| US10443127B2 (en) | 2013-11-05 | 2019-10-15 | Taiwan Semiconductor Manufacturing Company Limited | System and method for supplying a precursor for an atomic layer deposition (ALD) process |
| US20150126036A1 (en) | 2013-11-05 | 2015-05-07 | Tokyo Electron Limited | Controlling etch rate drift and particles during plasma processing |
| US20150125628A1 (en) | 2013-11-06 | 2015-05-07 | Asm Ip Holding B.V. | Method of depositing thin film |
| CN104630735B (zh) | 2013-11-06 | 2017-12-19 | 北京北方华创微电子装备有限公司 | 温度监控装置及等离子体加工设备 |
| KR20150052996A (ko) | 2013-11-07 | 2015-05-15 | 삼성디스플레이 주식회사 | 기판 이송 장치 및 이를 포함하는 박막 증착 장치 |
| US9330937B2 (en) | 2013-11-13 | 2016-05-03 | Intermolecular, Inc. | Etching of semiconductor structures that include titanium-based layers |
| USD739222S1 (en) | 2013-11-13 | 2015-09-22 | Jeff Chadbourne | Two-piece magnetic clamp |
| US9605343B2 (en) | 2013-11-13 | 2017-03-28 | Asm Ip Holding B.V. | Method for forming conformal carbon films, structures conformal carbon film, and system of forming same |
| SG10201804237VA (en) | 2013-11-21 | 2018-06-28 | Entegris Inc | Surface coating for chamber components used in plasma systems |
| US9745658B2 (en) | 2013-11-25 | 2017-08-29 | Lam Research Corporation | Chamber undercoat preparation method for low temperature ALD films |
| KR101539298B1 (ko) | 2013-11-25 | 2015-07-29 | 주식회사 엘지실트론 | 에피택셜 웨이퍼 성장 장치 |
| KR20150060086A (ko) | 2013-11-25 | 2015-06-03 | 주식회사 테라세미콘 | 클러스터형 배치식 기판처리 시스템 |
| US10179947B2 (en) | 2013-11-26 | 2019-01-15 | Asm Ip Holding B.V. | Method for forming conformal nitrided, oxidized, or carbonized dielectric film by atomic layer deposition |
| KR20150061179A (ko) | 2013-11-26 | 2015-06-04 | 에스케이하이닉스 주식회사 | 플라즈마 강화 기상 증착 |
| TWI588286B (zh) | 2013-11-26 | 2017-06-21 | 烏翠泰克股份有限公司 | 經改良的電漿強化原子層沉積方法、周期及裝置 |
| US9245762B2 (en) | 2013-12-02 | 2016-01-26 | Applied Materials, Inc. | Procedure for etch rate consistency |
| US9355882B2 (en) | 2013-12-04 | 2016-05-31 | Taiwan Semiconductor Manufacturing Co., Ltd. | Transfer module for bowed wafers |
| KR20150064993A (ko) | 2013-12-04 | 2015-06-12 | 삼성전자주식회사 | 반도체 제조 장치 |
| US9620382B2 (en) | 2013-12-06 | 2017-04-11 | University Of Maryland, College Park | Reactor for plasma-based atomic layer etching of materials |
| TW201525173A (zh) | 2013-12-09 | 2015-07-01 | Applied Materials Inc | 選擇性層沉積之方法 |
| US9401273B2 (en) | 2013-12-11 | 2016-07-26 | Asm Ip Holding B.V. | Atomic layer deposition of silicon carbon nitride based materials |
| JP2015115461A (ja) | 2013-12-11 | 2015-06-22 | 大日本印刷株式会社 | 微細構造体の欠陥修正方法および製造方法 |
| TWI678751B (zh) | 2013-12-13 | 2019-12-01 | 日商昕芙旎雅股份有限公司 | 設備前端模組（ｅｆｅｍ） |
| JP5859586B2 (ja) | 2013-12-27 | 2016-02-10 | 株式会社日立国際電気 | 基板処理システム、半導体装置の製造方法および記録媒体 |
| US10431489B2 (en) | 2013-12-17 | 2019-10-01 | Applied Materials, Inc. | Substrate support apparatus having reduced substrate particle generation |
| KR102102787B1 (ko) | 2013-12-17 | 2020-04-22 | 삼성전자주식회사 | 기판 처리 장치 및 블록커 플레이트 어셈블리 |
| WO2015095394A1 (en) | 2013-12-17 | 2015-06-25 | Texas Instruments Incorporated | Elongated contacts using litho-freeze-litho-etch process |
| US9245742B2 (en) | 2013-12-18 | 2016-01-26 | Asm Ip Holding B.V. | Sulfur-containing thin films |
| US9362385B2 (en) | 2013-12-18 | 2016-06-07 | Taiwan Semiconductor Manufacturing Company Ltd. | Method for tuning threshold voltage of semiconductor device with metal gate structure |
| US9984874B2 (en) | 2013-12-18 | 2018-05-29 | Imec Vzw | Method of producing transition metal dichalcogenide layer |
| US9478419B2 (en) | 2013-12-18 | 2016-10-25 | Asm Ip Holding B.V. | Sulfur-containing thin films |
| JP6230900B2 (ja) | 2013-12-19 | 2017-11-15 | 東京エレクトロン株式会社 | 基板処理装置 |
| US20150179640A1 (en) | 2013-12-19 | 2015-06-25 | Globalfoundries Inc. | Common fabrication of different semiconductor devices with different threshold voltages |
| US20150176124A1 (en) | 2013-12-19 | 2015-06-25 | Intermolecular, Inc. | Methods for Rapid Generation of ALD Saturation Curves Using Segmented Spatial ALD |
| KR20150073251A (ko) | 2013-12-20 | 2015-07-01 | 에스케이하이닉스 주식회사 | 반도체 장치 및 그 제조 방법 |
| US9353440B2 (en) | 2013-12-20 | 2016-05-31 | Applied Materials, Inc. | Dual-direction chemical delivery system for ALD/CVD chambers |
| US9698035B2 (en) | 2013-12-23 | 2017-07-04 | Lam Research Corporation | Microstructures for improved wafer handling |
| US20150175467A1 (en) | 2013-12-23 | 2015-06-25 | Infineon Technologies Austria Ag | Mold, method for producing a mold, and method for forming a mold article |
| KR102146705B1 (ko) | 2013-12-23 | 2020-08-21 | 삼성전자주식회사 | 반도체 소자의 배선 구조물 및 그 형성 방법 |
| US9406547B2 (en) | 2013-12-24 | 2016-08-02 | Intel Corporation | Techniques for trench isolation using flowable dielectric materials |
| TWI650832B (zh) | 2013-12-26 | 2019-02-11 | 維克儀器公司 | 用於化學氣相沉積系統之具有隔熱蓋的晶圓載具 |
| US9159561B2 (en) | 2013-12-26 | 2015-10-13 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method for overcoming broken line and photoresist scum issues in tri-layer photoresist patterning |
| US20150184287A1 (en) | 2013-12-26 | 2015-07-02 | Intermolecular, Inc. | Systems and Methods for Parallel Combinatorial Vapor Deposition Processing |
| JP6247095B2 (ja) | 2013-12-27 | 2017-12-13 | 株式会社日立国際電気 | 半導体装置の製造方法、基板処理装置およびプログラム |
| TWI654336B (zh) | 2013-12-30 | 2019-03-21 | 美商蘭姆研究公司 | 具有脈衝式電漿曝露之電漿輔助式原子層沉積 |
| CN104752351B (zh) | 2013-12-30 | 2019-03-29 | 中芯国际集成电路制造(上海)有限公司 | 半导体器件的形成方法 |
| US9219006B2 (en) | 2014-01-13 | 2015-12-22 | Applied Materials, Inc. | Flowable carbon film by FCVD hardware using remote plasma PECVD |
| WO2015156871A2 (en) | 2014-01-15 | 2015-10-15 | Forrest Stephen R Forrest | Non-destructive wafer recycling for epitaxial lift-off thin-film device using a superlattice epitaxial layer |
| CN106415810B (zh) | 2014-01-17 | 2020-03-20 | 皇家飞利浦有限公司 | 包括半导体光源的加热系统 |
| US9328416B2 (en) | 2014-01-17 | 2016-05-03 | Lam Research Corporation | Method for the reduction of defectivity in vapor deposited films |
| US9677172B2 (en) | 2014-01-21 | 2017-06-13 | Applied Materials, Inc. | Methods for forming a cobalt-ruthenium liner layer for interconnect structures |
| SG11201605901QA (en) | 2014-01-23 | 2016-08-30 | Ultratech Inc | Vapor delivery system |
| JP6324739B2 (ja) | 2014-01-27 | 2018-05-16 | 株式会社Kelk | 半導体ウェーハの温度制御装置、及び半導体ウェーハの温度制御方法 |
| WO2015115202A1 (ja) | 2014-01-28 | 2015-08-06 | 三菱電機株式会社 | 炭化珪素半導体装置及び炭化珪素半導体装置の製造方法 |
| JP5805227B2 (ja) | 2014-01-28 | 2015-11-04 | 東京エレクトロン株式会社 | プラズマ処理装置 |
| JP6208588B2 (ja) | 2014-01-28 | 2017-10-04 | 東京エレクトロン株式会社 | 支持機構及び基板処理装置 |
| KR102155181B1 (ko) | 2014-01-28 | 2020-09-11 | 삼성전자주식회사 | 반도체 장치 및 그 제조 방법 |
| US9502218B2 (en) | 2014-01-31 | 2016-11-22 | Applied Materials, Inc. | RPS assisted RF plasma source for semiconductor processing |
| CN106104775B (zh) | 2014-01-31 | 2019-05-21 | 应用材料公司 | 腔室涂层 |
| TWI639179B (zh) | 2014-01-31 | 2018-10-21 | 美商蘭姆研究公司 | 真空整合硬遮罩製程及設備 |
| USD732644S1 (en) | 2014-02-04 | 2015-06-23 | Asm Ip Holding B.V. | Top plate |
| USD732145S1 (en) | 2014-02-04 | 2015-06-16 | Asm Ip Holding B.V. | Shower plate |
| TWI661072B (zh) | 2014-02-04 | 2019-06-01 | 荷蘭商Ａｓｍ Ｉｐ控股公司 | 金屬、金屬氧化物與介電質的選擇性沈積 |
| USD725168S1 (en) | 2014-02-04 | 2015-03-24 | Asm Ip Holding B.V. | Heater block |
| USD726884S1 (en) | 2014-02-04 | 2015-04-14 | Asm Ip Holding B.V. | Heater block |
| USD720838S1 (en) | 2014-02-04 | 2015-01-06 | Asm Ip Holding B.V. | Shower plate |
| USD724701S1 (en) | 2014-02-04 | 2015-03-17 | ASM IP Holding, B.V. | Shower plate |
| US9370863B2 (en) | 2014-02-04 | 2016-06-21 | Asm Ip Holding B.V. | Anti-slip end-effector for transporting workpiece |
| US9214340B2 (en) | 2014-02-05 | 2015-12-15 | Applied Materials, Inc. | Apparatus and method of forming an indium gallium zinc oxide layer |
| US8993457B1 (en) | 2014-02-06 | 2015-03-31 | Cypress Semiconductor Corporation | Method of fabricating a charge-trapping gate stack using a CMOS process flow |
| US9556514B2 (en) | 2014-02-06 | 2017-01-31 | Veeco Ald Inc. | Spatial deposition of material using short-distance reciprocating motions |
| US9416447B2 (en) | 2014-02-07 | 2016-08-16 | HGST Netherlands B.V. | Method for line density multiplication using block copolymers and sequential infiltration synthesis |
| US11158526B2 (en) | 2014-02-07 | 2021-10-26 | Applied Materials, Inc. | Temperature controlled substrate support assembly |
| US9281211B2 (en) | 2014-02-10 | 2016-03-08 | International Business Machines Corporation | Nanoscale interconnect structure |
| US9721947B2 (en) | 2014-02-12 | 2017-08-01 | Taiwan Semiconductor Manufacturing Company, Ltd. | Semiconductor device and method of manufacturing |
| USD733257S1 (en) | 2014-02-14 | 2015-06-30 | Hansgrohe Se | Overhead shower |
| JP6249815B2 (ja) | 2014-02-17 | 2017-12-20 | 株式会社Ihi | 耐熱複合材料の製造方法及び製造装置 |
| CN203721699U (zh) | 2014-02-20 | 2014-07-16 | 北京七星华创电子股份有限公司 | 一种盘状物的夹持装置及盘状物的旋转平台 |
| US9916995B2 (en) | 2014-02-24 | 2018-03-13 | Lam Research Corporation | Compact substrate processing tool with multi-station processing and pre-processing and/or post-processing stations |
| JP6396699B2 (ja) | 2014-02-24 | 2018-09-26 | 東京エレクトロン株式会社 | エッチング方法 |
| KR102233577B1 (ko) | 2014-02-25 | 2021-03-30 | 삼성전자주식회사 | 반도체 소자의 패턴 형성 방법 |
| US9362180B2 (en) | 2014-02-25 | 2016-06-07 | Globalfoundries Inc. | Integrated circuit having multiple threshold voltages |
| US10683571B2 (en) | 2014-02-25 | 2020-06-16 | Asm Ip Holding B.V. | Gas supply manifold and method of supplying gases to chamber using same |
| JP6303592B2 (ja) | 2014-02-25 | 2018-04-04 | 東京エレクトロン株式会社 | 基板処理装置 |
| US9576952B2 (en) | 2014-02-25 | 2017-02-21 | Globalfoundries Inc. | Integrated circuits with varying gate structures and fabrication methods |
| US9425078B2 (en) | 2014-02-26 | 2016-08-23 | Lam Research Corporation | Inhibitor plasma mediated atomic layer deposition for seamless feature fill |
| JP5926753B2 (ja) | 2014-02-26 | 2016-05-25 | 東京エレクトロン株式会社 | 基板処理方法、プログラム、コンピュータ記憶媒体及び基板処理システム |
| WO2015127614A1 (zh) | 2014-02-27 | 2015-09-03 | 深圳市祥涛瑞杰贸易有限公司 | 空气净化结构和空气净化系统 |
| TWI626701B (zh) | 2014-02-27 | 2018-06-11 | 斯克林集團公司 | 基板處理裝置及基板處理方法 |
| JP6278751B2 (ja) | 2014-03-04 | 2018-02-14 | 東京エレクトロン株式会社 | 搬送方法及び基板処理装置 |
| US9472410B2 (en) | 2014-03-05 | 2016-10-18 | Applied Materials, Inc. | Pixelated capacitance controlled ESC |
| US20150255324A1 (en) | 2014-03-06 | 2015-09-10 | Applied Materials, Inc. | Seamless gap-fill with spatial atomic layer deposition |
| KR20150104817A (ko) | 2014-03-06 | 2015-09-16 | 에스케이하이닉스 주식회사 | 반도체 장치 및 그 제조 방법 |
| JP6204231B2 (ja) | 2014-03-11 | 2017-09-27 | 大陽日酸株式会社 | 空気液化分離装置及び方法 |
| JP2015173230A (ja) | 2014-03-12 | 2015-10-01 | 株式会社東芝 | 半導体装置及び半導体装置の製造方法 |
| US10109534B2 (en) | 2014-03-14 | 2018-10-23 | Applied Materials, Inc. | Multi-threshold voltage (Vt) workfunction metal by selective atomic layer deposition (ALD) |
| US9447498B2 (en) | 2014-03-18 | 2016-09-20 | Asm Ip Holding B.V. | Method for performing uniform processing in gas system-sharing multiple reaction chambers |
| JP6379550B2 (ja) | 2014-03-18 | 2018-08-29 | 東京エレクトロン株式会社 | 成膜装置 |
| US10167557B2 (en) | 2014-03-18 | 2019-01-01 | Asm Ip Holding B.V. | Gas distribution system, reactor including the system, and methods of using the same |
| US9299557B2 (en) | 2014-03-19 | 2016-03-29 | Asm Ip Holding B.V. | Plasma pre-clean module and process |
| US11015245B2 (en) | 2014-03-19 | 2021-05-25 | Asm Ip Holding B.V. | Gas-phase reactor and system having exhaust plenum and components thereof |
| KR102308587B1 (ko) | 2014-03-19 | 2021-10-01 | 가부시키가이샤 스크린 홀딩스 | 기판 처리 장치 및 기판 처리 방법 |
| US20150267295A1 (en) | 2014-03-19 | 2015-09-24 | Asm Ip Holding B.V. | Removable substrate tray and assembly and reactor including same |
| JP5944429B2 (ja) | 2014-03-20 | 2016-07-05 | 株式会社日立国際電気 | 基板処理装置、半導体装置の製造方法、プログラム及び記録媒体 |
| JP6275822B2 (ja) | 2014-03-20 | 2018-02-07 | 株式会社東芝 | 非水電解質電池用活物質、非水電解質電池用電極、非水電解質二次電池、電池パック及び非水電解質電池用活物質の製造方法 |
| WO2015141792A1 (ja) | 2014-03-20 | 2015-09-24 | 株式会社日立国際電気 | 基板処理装置、天井部及び半導体装置の製造方法 |
| JP6270575B2 (ja) | 2014-03-24 | 2018-01-31 | 株式会社日立国際電気 | 反応管、基板処理装置及び半導体装置の製造方法 |
| JP6304592B2 (ja) | 2014-03-25 | 2018-04-04 | 株式会社Ｓｃｒｅｅｎホールディングス | 基板処理方法および基板処理装置 |
| US20150275355A1 (en) | 2014-03-26 | 2015-10-01 | Air Products And Chemicals, Inc. | Compositions and methods for the deposition of silicon oxide films |
| US9583337B2 (en) | 2014-03-26 | 2017-02-28 | Ultratech, Inc. | Oxygen radical enhanced atomic-layer deposition using ozone plasma |
| JP5941491B2 (ja) | 2014-03-26 | 2016-06-29 | 株式会社日立国際電気 | 基板処理装置及び半導体装置の製造方法並びにプログラム |
| JP6204570B2 (ja) | 2014-03-28 | 2017-09-27 | 株式会社日立国際電気 | 基板処理装置、半導体装置の製造方法および記録媒体 |
| US9637823B2 (en) | 2014-03-31 | 2017-05-02 | Asm Ip Holding B.V. | Plasma atomic layer deposition |
| JP6254036B2 (ja) | 2014-03-31 | 2017-12-27 | 三菱重工業株式会社 | 三次元積層装置及び三次元積層方法 |
| JP6147693B2 (ja) | 2014-03-31 | 2017-06-14 | 株式会社日立国際電気 | 半導体装置の製造方法、基板処理装置、およびプログラム |
| US20150280051A1 (en) | 2014-04-01 | 2015-10-01 | Tsmc Solar Ltd. | Diffuser head apparatus and method of gas distribution |
| US9343350B2 (en) | 2014-04-03 | 2016-05-17 | Asm Ip Holding B.V. | Anti-slip end effector for transporting workpiece using van der waals force |
| US9663857B2 (en) | 2014-04-07 | 2017-05-30 | Asm Ip Holding B.V. | Method for stabilizing reaction chamber pressure |
| US9269590B2 (en) | 2014-04-07 | 2016-02-23 | Applied Materials, Inc. | Spacer formation |
| KR102094470B1 (ko) | 2014-04-08 | 2020-03-27 | 삼성전자주식회사 | 반도체 소자 및 그 제조 방법 |
| US10047435B2 (en) | 2014-04-16 | 2018-08-14 | Asm Ip Holding B.V. | Dual selective deposition |
| US9404587B2 (en) | 2014-04-24 | 2016-08-02 | ASM IP Holding B.V | Lockout tagout for semiconductor vacuum valve |
| US20150311043A1 (en) | 2014-04-25 | 2015-10-29 | Applied Materials, Inc. | Chamber component with fluorinated thin film coating |
| US9976211B2 (en) | 2014-04-25 | 2018-05-22 | Applied Materials, Inc. | Plasma erosion resistant thin film coating for high temperature application |
| US9184054B1 (en) | 2014-04-25 | 2015-11-10 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method for integrated circuit patterning |
| US9343294B2 (en) | 2014-04-28 | 2016-05-17 | Taiwan Semiconductor Manufacturing Company, Ltd. | Interconnect structure having air gap and method of forming the same |
| US9464352B2 (en) | 2014-05-02 | 2016-10-11 | Asm Ip Holding B.V. | Low-oxidation plasma-assisted process |
| JP6324800B2 (ja) | 2014-05-07 | 2018-05-16 | 東京エレクトロン株式会社 | 成膜方法および成膜装置 |
| KR102168792B1 (ko) | 2014-05-08 | 2020-10-23 | 스트라타시스 엘티디. | 선택적 소결에 의한 3d 프린팅 방법 및 장치 |
| US9917295B2 (en) | 2014-05-13 | 2018-03-13 | Uchicago Argonne, Llc | Methods for using atomic layer deposition to produce a film for solid state electrolytes and protective electrode coatings for lithium batteries |
| TWI518751B (zh) | 2014-05-14 | 2016-01-21 | 國立清華大學 | 成分元素濃度漸變分佈之載子通道及其製作方法 |
| US9343343B2 (en) | 2014-05-19 | 2016-05-17 | Asm Ip Holding B.V. | Method for reducing particle generation at bevel portion of substrate |
| US9257557B2 (en) | 2014-05-20 | 2016-02-09 | Globalfoundries Inc. | Semiconductor structure with self-aligned wells and multiple channel materials |
| US9577192B2 (en) | 2014-05-21 | 2017-02-21 | Sony Semiconductor Solutions Corporation | Method for forming a metal cap in a semiconductor memory device |
| WO2015179081A1 (en) | 2014-05-21 | 2015-11-26 | Applied Materials, Inc. | Thermal processing susceptor |
| US9881788B2 (en) | 2014-05-22 | 2018-01-30 | Lam Research Corporation | Back side deposition apparatus and applications |
| USD733262S1 (en) | 2014-05-22 | 2015-06-30 | Young Boung Kang | Disposer of connection member for kitchen sink bowl |
| JP2016005900A (ja) | 2014-05-27 | 2016-01-14 | パナソニックＩｐマネジメント株式会社 | ガスバリア膜、ガスバリア膜付きフィルム基板およびこれを備えた電子デバイス。 |
| US9309598B2 (en) | 2014-05-28 | 2016-04-12 | Applied Materials, Inc. | Oxide and metal removal |
| US20150348755A1 (en) | 2014-05-29 | 2015-12-03 | Charm Engineering Co., Ltd. | Gas distribution apparatus and substrate processing apparatus including same |
| KR102162733B1 (ko) | 2014-05-29 | 2020-10-07 | 에스케이하이닉스 주식회사 | 듀얼일함수 매립게이트형 트랜지스터 및 그 제조 방법, 그를 구비한 전자장치 |
| WO2015181770A2 (en) | 2014-05-30 | 2015-12-03 | Eltek S.P.A. | A sensor for detecting the level of a medium |
| WO2015182699A1 (ja) | 2014-05-30 | 2015-12-03 | 株式会社 荏原製作所 | 真空排気システム |
| JP6301203B2 (ja) | 2014-06-02 | 2018-03-28 | 株式会社ディスコ | チップの製造方法 |
| JP6225837B2 (ja) | 2014-06-04 | 2017-11-08 | 東京エレクトロン株式会社 | 成膜装置、成膜方法、記憶媒体 |
| EP2953162A1 (en) | 2014-06-06 | 2015-12-09 | IMEC vzw | Method for manufacturing a semiconductor device comprising transistors each having a different effective work function |
| US9773683B2 (en) | 2014-06-09 | 2017-09-26 | American Air Liquide, Inc. | Atomic layer or cyclic plasma etching chemistries and processes |
| US10998228B2 (en) | 2014-06-12 | 2021-05-04 | Taiwan Semiconductor Manufacturing Company, Ltd. | Self-aligned interconnect with protection layer |
| USD743513S1 (en) | 2014-06-13 | 2015-11-17 | Asm Ip Holding B.V. | Seal ring |
| DE102014108352A1 (de) | 2014-06-13 | 2015-12-17 | Forschungszentrum Jülich GmbH | Verfahren zum Abscheiden einer Kristallschicht bei niedrigen Temperaturen, insbesondere einer photolumineszierenden IV-IV-Schicht auf einem IV-Substrat, sowie ein eine derartige Schicht aufweisendes optoelektronisches Bauelement |
| US9978632B2 (en) | 2014-06-13 | 2018-05-22 | Applied Materials, Inc. | Direct lift process apparatus |
| JP6225842B2 (ja) | 2014-06-16 | 2017-11-08 | 東京エレクトロン株式会社 | 成膜装置、成膜方法、記憶媒体 |
| KR102195003B1 (ko) | 2014-06-18 | 2020-12-24 | 삼성전자주식회사 | 반도체 다이오드, 가변 저항 메모리 장치 및 가변 저항 메모리 장치의 제조 방법 |
| USD753629S1 (en) | 2014-06-19 | 2016-04-12 | Yamaha Corporation | Speaker |
| US9378969B2 (en) | 2014-06-19 | 2016-06-28 | Applied Materials, Inc. | Low temperature gas-phase carbon removal |
| CN104022121B (zh) | 2014-06-23 | 2017-05-03 | 中国科学院微电子研究所 | 三维半导体器件及其制造方法 |
| US20150367253A1 (en) | 2014-06-24 | 2015-12-24 | Us Synthetic Corporation | Photoluminescent thin-layer chromatography plate and methods for making same |
| US20150380296A1 (en) | 2014-06-25 | 2015-12-31 | Lam Research Corporation | Cleaning of carbon-based contaminants in metal interconnects for interconnect capping applications |
| CN114242791B (zh) | 2014-06-26 | 2025-05-27 | 太浩研究有限公司 | 具有带有经掺杂的子鳍部区域的ω形鳍部的非平面半导体器件及其制造方法 |
| US9825191B2 (en) | 2014-06-27 | 2017-11-21 | Sunpower Corporation | Passivation of light-receiving surfaces of solar cells with high energy gap (EG) materials |
| JP6629312B2 (ja) | 2014-07-03 | 2020-01-15 | アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ | 選択的堆積のための方法及び装置 |
| US9911579B2 (en) | 2014-07-03 | 2018-03-06 | Applied Materials, Inc. | Showerhead having a detachable high resistivity gas distribution plate |
| USD736348S1 (en) | 2014-07-07 | 2015-08-11 | Jiangmen Triumph Rain Showers Co., LTD | Spray head for a shower |
| JP5837962B1 (ja) | 2014-07-08 | 2015-12-24 | 株式会社日立国際電気 | 基板処理装置、半導体装置の製造方法およびガス整流部 |
| US9349620B2 (en) | 2014-07-09 | 2016-05-24 | Asm Ip Holdings B.V. | Apparatus and method for pre-baking substrate upstream of process chamber |
| CN106463453A (zh) | 2014-07-10 | 2017-02-22 | 应用材料公司 | 在化学气相沉积反应器中的基座的设计 |
| US9617637B2 (en) | 2014-07-15 | 2017-04-11 | Lam Research Corporation | Systems and methods for improving deposition rate uniformity and reducing defects in substrate processing systems |
| US9412581B2 (en) | 2014-07-16 | 2016-08-09 | Applied Materials, Inc. | Low-K dielectric gapfill by flowable deposition |
| US10192717B2 (en) | 2014-07-21 | 2019-01-29 | Applied Materials, Inc. | Conditioning remote plasma source for enhanced performance having repeatable etch and deposition rates |
| KR102262887B1 (ko) | 2014-07-21 | 2021-06-08 | 삼성전자주식회사 | 반도체 장치 및 그 제조 방법 |
| FR3024051A1 (fr) | 2014-07-28 | 2016-01-29 | Total Raffinage Chimie | Chambre a plaques en materiau ceramique pour unite de craquage catalytique fluide |
| US10858737B2 (en) | 2014-07-28 | 2020-12-08 | Asm Ip Holding B.V. | Showerhead assembly and components thereof |
| US9548188B2 (en) | 2014-07-30 | 2017-01-17 | Lam Research Corporation | Method of conditioning vacuum chamber of semiconductor substrate processing apparatus |
| US9617638B2 (en) | 2014-07-30 | 2017-04-11 | Lam Research Corporation | Methods and apparatuses for showerhead backside parasitic plasma suppression in a secondary purge enabled ALD system |
| US9970108B2 (en) | 2014-08-01 | 2018-05-15 | Lam Research Corporation | Systems and methods for vapor delivery in a substrate processing system |
| US9543180B2 (en) | 2014-08-01 | 2017-01-10 | Asm Ip Holding B.V. | Apparatus and method for transporting wafers between wafer carrier and process tool under vacuum |
| US10176996B2 (en) | 2014-08-06 | 2019-01-08 | Globalfoundries Inc. | Replacement metal gate and fabrication process with reduced lithography steps |
| USD751176S1 (en) | 2014-08-07 | 2016-03-08 | Hansgrohe Se | Overhead shower |
| CN104197411B (zh) | 2014-08-08 | 2017-07-28 | 珠海格力电器股份有限公司 | 空调器的室内机及空调器 |
| TWI656232B (zh) | 2014-08-14 | 2019-04-11 | 法商液態空氣喬治斯克勞帝方法研究開發股份有限公司 | 鉬組成物及其用於形成氧化鉬膜之用途 |
| KR20160021958A (ko) | 2014-08-18 | 2016-02-29 | 삼성전자주식회사 | 플라즈마 처리 장치 및 기판 처리 방법 |
| US9252238B1 (en) | 2014-08-18 | 2016-02-02 | Lam Research Corporation | Semiconductor structures with coplanar recessed gate layers and fabrication methods |
| US9890456B2 (en) | 2014-08-21 | 2018-02-13 | Asm Ip Holding B.V. | Method and system for in situ formation of gas-phase compounds |
| US9349637B2 (en) | 2014-08-21 | 2016-05-24 | Lam Research Corporation | Method for void-free cobalt gap fill |
| USD782419S1 (en) | 2014-08-22 | 2017-03-28 | Christopher C. Willette | Female keyed lamp plug |
| US9318319B2 (en) | 2014-08-27 | 2016-04-19 | Ultratech, Inc. | Radical-enhanced atomic layer deposition using CF4 to enhance oxygen radical generation |
| CN104201108B (zh) | 2014-08-27 | 2017-11-07 | 上海集成电路研发中心有限公司 | SiGe源/漏区的制造方法 |
| US9520294B2 (en) | 2014-08-29 | 2016-12-13 | Applied Materials, Inc. | Atomic layer etch process using an electron beam |
| CN106856664B (zh) | 2014-09-05 | 2019-11-19 | 日商乐华股份有限公司 | 装载口及装载口的气氛置换方法 |
| US9410742B2 (en) | 2014-09-08 | 2016-08-09 | Tokyo Electron Limited | High capacity magnetic annealing system and method of operating |
| US10224222B2 (en) | 2014-09-09 | 2019-03-05 | Asm Ip Holding B.V. | Assembly of liner and flange for vertical furnace as well as a vertical process furnace |
| USD742202S1 (en) | 2014-09-11 | 2015-11-03 | Thomas Jason Cyphers | Sign frame key |
| TW201613231A (en) | 2014-09-16 | 2016-04-01 | Huaquan Energy | Geometry and insulation components of motor mechanism |
| US9576792B2 (en) | 2014-09-17 | 2017-02-21 | Asm Ip Holding B.V. | Deposition of SiN |
| USD764196S1 (en) | 2014-09-17 | 2016-08-23 | Sheryl Handler | Stool |
| US20170309490A1 (en) | 2014-09-24 | 2017-10-26 | Hitachi Kokusai Electric Inc. | Method of manufacturing semiconductor device |
| US9214333B1 (en) | 2014-09-24 | 2015-12-15 | Lam Research Corporation | Methods and apparatuses for uniform reduction of the in-feature wet etch rate of a silicon nitride film formed by ALD |
| WO2016048306A1 (en) | 2014-09-24 | 2016-03-31 | Intel Corporation | Scaled tfet transistor formed using nanowire with surface termination |
| US9478414B2 (en) | 2014-09-26 | 2016-10-25 | Asm Ip Holding B.V. | Method for hydrophobization of surface of silicon-containing film by ALD |
| WO2015041376A1 (ja) | 2014-09-30 | 2015-03-26 | 株式会社日立国際電気 | 基板処理装置、半導体装置の製造方法および反応管 |
| US9362107B2 (en) | 2014-09-30 | 2016-06-07 | Applied Materials, Inc. | Flowable low-k dielectric gapfill treatment |
| US9558946B2 (en) | 2014-10-03 | 2017-01-31 | Taiwan Semiconductor Manufacturing Company, Ltd. | FinFETs and methods of forming FinFETs |
| US10192770B2 (en) | 2014-10-03 | 2019-01-29 | Applied Materials, Inc. | Spring-loaded pins for susceptor assembly and processing methods using same |
| US9331093B2 (en) | 2014-10-03 | 2016-05-03 | Sandisk Technologies Inc. | Three dimensional NAND device with silicon germanium heterostructure channel |
| US9657845B2 (en) | 2014-10-07 | 2017-05-23 | Asm Ip Holding B.V. | Variable conductance gas distribution apparatus and method |
| US10941490B2 (en) | 2014-10-07 | 2021-03-09 | Asm Ip Holding B.V. | Multiple temperature range susceptor, assembly, reactor and system including the susceptor, and methods of using the same |
| ES2703911T3 (es) | 2014-10-13 | 2019-03-13 | Heraeus Deutschland Gmbh & Co Kg | Pintura de color cobre |
| USD759137S1 (en) | 2014-10-14 | 2016-06-14 | Victor Equipment Company | Consumables adapter for a welding torch |
| US10460949B2 (en) | 2014-10-20 | 2019-10-29 | Tokyo Electron Limited | Substrate processing apparatus, substrate processing method and storage medium |
| US9530787B2 (en) | 2014-10-20 | 2016-12-27 | Sandisk Technologies Llc | Batch contacts for multiple electrically conductive layers |
| JP2016086099A (ja) | 2014-10-27 | 2016-05-19 | 東京エレクトロン株式会社 | プラズマ処理装置 |
| CN107112213B (zh) | 2014-10-30 | 2021-04-16 | 应用材料公司 | 在低温下生长薄外延膜的方法 |
| CN104307264A (zh) | 2014-10-31 | 2015-01-28 | 苏州博菡环保科技有限公司 | 空气净化器 |
| KR101535573B1 (ko) | 2014-11-04 | 2015-07-13 | 연세대학교 산학협력단 | 전이금속 칼코겐 화합물 합성 방법 |
| KR102268187B1 (ko) | 2014-11-10 | 2021-06-24 | 삼성전자주식회사 | 자기 기억 소자 및 그 제조 방법 |
| US9305836B1 (en) | 2014-11-10 | 2016-04-05 | International Business Machines Corporation | Air gap semiconductor structure with selective cap bilayer |
| US10269614B2 (en) | 2014-11-12 | 2019-04-23 | Applied Materials, Inc. | Susceptor design to reduce edge thermal peak |
| KR102300403B1 (ko) | 2014-11-19 | 2021-09-09 | 에이에스엠 아이피 홀딩 비.브이. | 박막 증착 방법 |
| KR102493327B1 (ko) | 2014-11-21 | 2023-01-27 | 어플라이드 머티어리얼스, 인코포레이티드 | 알코올 보조 ald 막 증착 |
| JP2016098406A (ja) | 2014-11-21 | 2016-05-30 | 東京エレクトロン株式会社 | モリブデン膜の成膜方法 |
| US9564312B2 (en) | 2014-11-24 | 2017-02-07 | Lam Research Corporation | Selective inhibition in atomic layer deposition of silicon-containing films |
| US9589790B2 (en) | 2014-11-24 | 2017-03-07 | Lam Research Corporation | Method of depositing ammonia free and chlorine free conformal silicon nitride film |
| JP6354539B2 (ja) | 2014-11-25 | 2018-07-11 | 東京エレクトロン株式会社 | 基板処理装置、基板処理方法、記憶媒体 |
| JP6086892B2 (ja) | 2014-11-25 | 2017-03-01 | 株式会社日立国際電気 | 半導体装置の製造方法、基板処理装置およびプログラム |
| US9837281B2 (en) | 2014-11-26 | 2017-12-05 | Asm Ip Holding B.V. | Cyclic doped aluminum nitride deposition |
| US11637002B2 (en) | 2014-11-26 | 2023-04-25 | Applied Materials, Inc. | Methods and systems to enhance process uniformity |
| US9885112B2 (en) | 2014-12-02 | 2018-02-06 | Asm Ip Holdings B.V. | Film forming apparatus |
| US9997373B2 (en) | 2014-12-04 | 2018-06-12 | Lam Research Corporation | Technique to deposit sidewall passivation for high aspect ratio cylinder etch |
| US9620377B2 (en) | 2014-12-04 | 2017-04-11 | Lab Research Corporation | Technique to deposit metal-containing sidewall passivation for high aspect ratio cylinder etch |
| US9384998B2 (en) | 2014-12-04 | 2016-07-05 | Lam Research Corporation | Technique to deposit sidewall passivation for high aspect ratio cylinder etch |
| US9406683B2 (en) | 2014-12-04 | 2016-08-02 | International Business Machines Corporation | Wet bottling process for small diameter deep trench capacitors |
| US9142764B1 (en) | 2014-12-08 | 2015-09-22 | Intermolecular, Inc. | Methods of forming embedded resistors for resistive random access memory cells |
| KR102307633B1 (ko) | 2014-12-10 | 2021-10-06 | 삼성전자주식회사 | 반도체 소자 및 그 제조 방법 |
| US9951421B2 (en) | 2014-12-10 | 2018-04-24 | Lam Research Corporation | Inlet for effective mixing and purging |
| KR20160070359A (ko) | 2014-12-10 | 2016-06-20 | 삼성전자주식회사 | 가스 인젝터 및 이를 갖는 웨이퍼 처리 장치 |
| JP6459462B2 (ja) | 2014-12-11 | 2019-01-30 | 東京エレクトロン株式会社 | リーク判定方法、基板処理装置及び記憶媒体 |
| US20160168699A1 (en) | 2014-12-12 | 2016-06-16 | Asm Ip Holding B.V. | Method for depositing metal-containing film using particle-reduction step |
| US10062564B2 (en) | 2014-12-15 | 2018-08-28 | Tokyo Electron Limited | Method of selective gas phase film deposition on a substrate by modifying the surface using hydrogen plasma |
| US9820289B1 (en) | 2014-12-18 | 2017-11-14 | Sprint Spectrum L.P. | Method and system for managing quantity of carriers in air interface connection based on type of content |
| JP6404111B2 (ja) | 2014-12-18 | 2018-10-10 | 東京エレクトロン株式会社 | プラズマ処理装置 |
| WO2016100792A1 (en) | 2014-12-19 | 2016-06-23 | Sunedison Semiconductor Limited | Systems and methods for performing epitaxial smoothing processes on semiconductor structures |
| CN105762068A (zh) | 2014-12-19 | 2016-07-13 | 联华电子股份有限公司 | 半导体元件及其制作方法 |
| KR102263121B1 (ko) | 2014-12-22 | 2021-06-09 | 에이에스엠 아이피 홀딩 비.브이. | 반도체 소자 및 그 제조 방법 |
| US9396961B2 (en) | 2014-12-22 | 2016-07-19 | Lam Research Corporation | Integrated etch/clean for dielectric etch applications |
| CN104498895B (zh) | 2014-12-23 | 2017-02-22 | 国家纳米科学中心 | 一种超薄氮氧化硅膜材料及其制备方法和用途 |
| JP6322131B2 (ja) | 2014-12-24 | 2018-05-09 | 東京エレクトロン株式会社 | シリコン膜の成膜方法および成膜装置 |
| US9515072B2 (en) | 2014-12-26 | 2016-12-06 | Taiwan Semiconductor Manufacturing Company Ltd. | FinFET structure and method for manufacturing thereof |
| US9474163B2 (en) | 2014-12-30 | 2016-10-18 | Asm Ip Holding B.V. | Germanium oxide pre-clean module and process |
| US9425041B2 (en) | 2015-01-06 | 2016-08-23 | Lam Research Corporation | Isotropic atomic layer etch for silicon oxides using no activation |
| US9324846B1 (en) | 2015-01-08 | 2016-04-26 | Globalfoundries Inc. | Field plate in heterojunction bipolar transistor with improved break-down voltage |
| USD753269S1 (en) | 2015-01-09 | 2016-04-05 | Asm Ip Holding B.V. | Top plate |
| KR102506495B1 (ko) | 2015-01-12 | 2023-03-03 | 어플라이드 머티어리얼스, 인코포레이티드 | 기판 후면 변색 제어를 위한 지지 조립체 |
| US9576811B2 (en) | 2015-01-12 | 2017-02-21 | Lam Research Corporation | Integrating atomic scale processes: ALD (atomic layer deposition) and ALE (atomic layer etch) |
| US10658222B2 (en) | 2015-01-16 | 2020-05-19 | Lam Research Corporation | Moveable edge coupling ring for edge process control during semiconductor wafer processing |
| US9396956B1 (en) | 2015-01-16 | 2016-07-19 | Asm Ip Holding B.V. | Method of plasma-enhanced atomic layer etching |
| US9764986B2 (en) | 2015-01-22 | 2017-09-19 | Kennametal Inc. | Low temperature CVD coatings and applications thereof |
| US9496040B2 (en) | 2015-01-22 | 2016-11-15 | Sandisk Technologies Llc | Adaptive multi-page programming methods and apparatus for non-volatile memory |
| TW201639063A (zh) | 2015-01-22 | 2016-11-01 | 應用材料股份有限公司 | 批量加熱和冷卻腔室或負載鎖定裝置 |
| JP6470057B2 (ja) | 2015-01-29 | 2019-02-13 | 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ | 半導体装置の製造方法、基板処理装置およびプログラム |
| CN204629865U (zh) | 2015-02-03 | 2015-09-09 | 宁波永茂电器厂 | 双单元移动式冷风机 |
| US9928994B2 (en) | 2015-02-03 | 2018-03-27 | Lam Research Corporation | Methods for decreasing carbon-hydrogen content of amorphous carbon hardmask films |
| US9816180B2 (en) | 2015-02-03 | 2017-11-14 | Asm Ip Holding B.V. | Selective deposition |
| US9520295B2 (en) | 2015-02-03 | 2016-12-13 | Lam Research Corporation | Metal doping of amorphous carbon and silicon films used as hardmasks in substrate processing systems |
| JP6398761B2 (ja) | 2015-02-04 | 2018-10-03 | 東京エレクトロン株式会社 | 基板処理装置 |
| US9736920B2 (en) | 2015-02-06 | 2017-08-15 | Mks Instruments, Inc. | Apparatus and method for plasma ignition with a self-resonating device |
| US9963782B2 (en) | 2015-02-12 | 2018-05-08 | Asm Ip Holding B.V. | Semiconductor manufacturing apparatus |
| CN109023303A (zh) | 2015-02-13 | 2018-12-18 | 恩特格里斯公司 | 衬底部分上的复合原子层沉积ald涂层及在衬底部分上形成经图案化ald涂层的方法 |
| US9478415B2 (en) | 2015-02-13 | 2016-10-25 | Asm Ip Holding B.V. | Method for forming film having low resistance and shallow junction depth |
| US9275834B1 (en) | 2015-02-20 | 2016-03-01 | Applied Materials, Inc. | Selective titanium nitride etch |
| US10228291B2 (en) | 2015-02-25 | 2019-03-12 | Kokusai Electric Corporation | Substrate processing apparatus, and thermocouple |
| USD808254S1 (en) | 2015-02-25 | 2018-01-23 | Aluvision N.V. | Frame tightener |
| US9808246B2 (en) | 2015-03-06 | 2017-11-07 | Ethicon Endo-Surgery, Llc | Method of operating a powered surgical instrument |
| US10548504B2 (en) | 2015-03-06 | 2020-02-04 | Ethicon Llc | Overlaid multi sensor radio frequency (RF) electrode system to measure tissue compression |
| US10529542B2 (en) | 2015-03-11 | 2020-01-07 | Asm Ip Holdings B.V. | Cross-flow reactor and method |
| US10276355B2 (en) | 2015-03-12 | 2019-04-30 | Asm Ip Holding B.V. | Multi-zone reactor, system including the reactor, and method of using the same |
| IL237775B (en) | 2015-03-16 | 2019-03-31 | Redler Tech Ltd | Automatic, highly reliable, fully redundant electornic circuit breaker that includes means for preventing short-circuit overcurrent |
| JP6477075B2 (ja) | 2015-03-17 | 2019-03-06 | 東京エレクトロン株式会社 | 原料ガス供給装置及び成膜装置 |
| JP6706626B2 (ja) | 2015-03-18 | 2020-06-10 | インテグリス・インコーポレーテッド | フッ化アニールした膜でコーティングした物品 |
| USD761325S1 (en) | 2015-03-19 | 2016-07-12 | Issam N. Abed | Rear crankshaft seal housing |
| US10566187B2 (en) | 2015-03-20 | 2020-02-18 | Lam Research Corporation | Ultrathin atomic layer deposition film accuracy thickness control |
| JP2016178223A (ja) | 2015-03-20 | 2016-10-06 | ルネサスエレクトロニクス株式会社 | 半導体装置の製造方法 |
| JP6484478B2 (ja) | 2015-03-25 | 2019-03-13 | 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ | 半導体装置の製造方法、基板処理装置およびプログラム |
| SG11201706227SA (en) | 2015-03-26 | 2017-10-30 | Murata Machinery Ltd | Supporting device and supporting method for articles |
| JP5961297B1 (ja) | 2015-03-26 | 2016-08-02 | 株式会社日立国際電気 | 基板処理装置、半導体装置の製造方法及びプログラム |
| US9828672B2 (en) | 2015-03-26 | 2017-11-28 | Lam Research Corporation | Minimizing radical recombination using ALD silicon oxide surface coating with intermittent restoration plasma |
| JP6358143B2 (ja) | 2015-03-26 | 2018-07-18 | 株式会社ダイフク | 半導体容器保管設備 |
| JP6458595B2 (ja) | 2015-03-27 | 2019-01-30 | 東京エレクトロン株式会社 | 成膜装置及び成膜方法並びに記憶媒体 |
| US9777025B2 (en) | 2015-03-30 | 2017-10-03 | L'Air Liquide, Société pour l'Etude et l'Exploitation des Procédés Georges Claude | Si-containing film forming precursors and methods of using the same |
| US11124876B2 (en) | 2015-03-30 | 2021-09-21 | L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude | Si-containing film forming precursors and methods of using the same |
| US10246772B2 (en) | 2015-04-01 | 2019-04-02 | Applied Materials, Inc. | Plasma enhanced chemical vapor deposition of films for improved vertical etch performance in 3D NAND memory devices |
| USD759193S1 (en) | 2015-04-01 | 2016-06-14 | Cummins Emission Solutions, Inc. | Water deflector |
| US9502238B2 (en) | 2015-04-03 | 2016-11-22 | Lam Research Corporation | Deposition of conformal films by atomic layer deposition and atomic layer etch |
| KR102376982B1 (ko) | 2015-04-14 | 2022-03-21 | 삼성전자주식회사 | 세라믹을 이용하여 파티클 저감 효과를 가지는 원격 플라즈마 발생장치 |
| US20160307708A1 (en) | 2015-04-16 | 2016-10-20 | L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude | Tantalum-containing film forming compositions and vapor deposition of tantalum-containing films |
| USD801942S1 (en) | 2015-04-16 | 2017-11-07 | Applied Materials, Inc. | Target profile for a physical vapor deposition chamber target |
| KR20160124992A (ko) | 2015-04-20 | 2016-10-31 | 삼성전자주식회사 | 기판 제조 장치, 및 그의 세라믹 박막 코팅 방법 |
| USD797067S1 (en) | 2015-04-21 | 2017-09-12 | Applied Materials, Inc. | Target profile for a physical vapor deposition chamber target |
| US20160314964A1 (en) | 2015-04-21 | 2016-10-27 | Lam Research Corporation | Gap fill using carbon-based films |
| US9343297B1 (en) | 2015-04-22 | 2016-05-17 | Asm Ip Holding B.V. | Method for forming multi-element thin film constituted by at least five elements by PEALD |
| US9865459B2 (en) | 2015-04-22 | 2018-01-09 | Applied Materials, Inc. | Plasma treatment to improve adhesion between hardmask film and silicon oxide film |
| US11384432B2 (en) | 2015-04-22 | 2022-07-12 | Applied Materials, Inc. | Atomic layer deposition chamber with funnel-shaped gas dispersion channel and gas distribution plate |
| TWI615917B (zh) | 2015-04-27 | 2018-02-21 | Ｓｕｍｃｏ股份有限公司 | 承托器及磊晶生長裝置 |
| CN107636374B (zh) | 2015-05-07 | 2019-12-27 | 应用材料公司 | 一种波纹管和阀门组件 |
| EP3295148A4 (en) | 2015-05-11 | 2018-11-07 | The University of North Carolina at Chapel Hill | Fluidic devices with nanoscale manifolds for molecular transport, related systems and methods of analysis |
| US10177024B2 (en) | 2015-05-12 | 2019-01-08 | Lam Research Corporation | High temperature substrate pedestal module and components thereof |
| JP2016213475A (ja) | 2015-05-13 | 2016-12-15 | 東京エレクトロン株式会社 | シュリンク及び成長方法を使用する極端紫外線感度低下 |
| JP1544542S (zh) | 2015-05-14 | 2019-02-18 | ||
| US10170320B2 (en) | 2015-05-18 | 2019-01-01 | Lam Research Corporation | Feature fill with multi-stage nucleation inhibition |
| CN107636817B (zh) | 2015-05-22 | 2021-08-27 | 应用材料公司 | 方位可调整的多区域静电夹具 |
| JP1547057S (zh) | 2015-05-28 | 2016-04-04 | ||
| US9428833B1 (en) | 2015-05-29 | 2016-08-30 | Lam Research Corporation | Method and apparatus for backside deposition reduction by control of wafer support to achieve edge seal |
| US9941111B2 (en) | 2015-05-29 | 2018-04-10 | Infineon Technologies Ag | Method for processing a semiconductor layer, method for processing a silicon substrate, and method for processing a silicon layer |
| US9711350B2 (en) | 2015-06-03 | 2017-07-18 | Asm Ip Holding B.V. | Methods for semiconductor passivation by nitridation |
| US9449843B1 (en) | 2015-06-09 | 2016-09-20 | Applied Materials, Inc. | Selectively etching metals and metal nitrides conformally |
| JP1545222S (zh) | 2015-06-10 | 2016-03-07 | ||
| US10053774B2 (en) | 2015-06-12 | 2018-08-21 | Asm Ip Holding B.V. | Reactor system for sublimation of pre-clean byproducts and method thereof |
| US9646883B2 (en) | 2015-06-12 | 2017-05-09 | International Business Machines Corporation | Chemoepitaxy etch trim using a self aligned hard mask for metal line to via |
| KR102696320B1 (ko) | 2015-06-12 | 2024-08-20 | 어플라이드 머티어리얼스, 인코포레이티드 | 반도체 에피택시 성장을 위한 주입기 |
| CN106328702B (zh) | 2015-06-15 | 2020-03-06 | 联华电子股份有限公司 | 填充半导体元件间隙的方法及其形成的半导体元件 |
| US9647071B2 (en) | 2015-06-15 | 2017-05-09 | Taiwan Semiconductor Manufacturing Company, Ltd. | FINFET structures and methods of forming the same |
| US9711396B2 (en) | 2015-06-16 | 2017-07-18 | Asm Ip Holding B.V. | Method for forming metal chalcogenide thin films on a semiconductor device |
| USD798248S1 (en) | 2015-06-18 | 2017-09-26 | Applied Materials, Inc. | Target profile for a physical vapor deposition chamber target |
| US10438795B2 (en) | 2015-06-22 | 2019-10-08 | Veeco Instruments, Inc. | Self-centering wafer carrier system for chemical vapor deposition |
| US10458018B2 (en) | 2015-06-26 | 2019-10-29 | Asm Ip Holding B.V. | Structures including metal carbide material, devices including the structures, and methods of forming same |
| US20160379851A1 (en) | 2015-06-29 | 2016-12-29 | Bharath Swaminathan | Temperature controlled substrate processing |
| TWM512254U (zh) | 2015-07-02 | 2015-11-11 | Jjs Comm Co Ltd | 用於同軸電纜轉接頭之絕緣墊片結構 |
| KR102417934B1 (ko) | 2015-07-07 | 2022-07-07 | 에이에스엠 아이피 홀딩 비.브이. | 박막 증착 장치 |
| US10600673B2 (en) | 2015-07-07 | 2020-03-24 | Asm Ip Holding B.V. | Magnetic susceptor to baseplate seal |
| US10174437B2 (en) | 2015-07-09 | 2019-01-08 | Applied Materials, Inc. | Wafer electroplating chuck assembly |
| US9899291B2 (en) | 2015-07-13 | 2018-02-20 | Asm Ip Holding B.V. | Method for protecting layer by forming hydrocarbon-based extremely thin film |
| US10043661B2 (en) | 2015-07-13 | 2018-08-07 | Asm Ip Holding B.V. | Method for protecting layer by forming hydrocarbon-based extremely thin film |
| JP6578243B2 (ja) | 2015-07-17 | 2019-09-18 | 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ | ガス供給ノズル、基板処理装置、半導体装置の製造方法およびプログラム |
| US20170025291A1 (en) | 2015-07-22 | 2017-01-26 | Taiwan Semiconductor Manufacturing Co., Ltd. | Multi-chamber furnace for batch processing |
| US10083836B2 (en) | 2015-07-24 | 2018-09-25 | Asm Ip Holding B.V. | Formation of boron-doped titanium metal films with high work function |
| US10745808B2 (en) | 2015-07-24 | 2020-08-18 | Versum Materials Us, Llc | Methods for depositing Group 13 metal or metalloid nitride films |
| JP6529371B2 (ja) | 2015-07-27 | 2019-06-12 | 東京エレクトロン株式会社 | エッチング方法及びエッチング装置 |
| US9793097B2 (en) | 2015-07-27 | 2017-10-17 | Lam Research Corporation | Time varying segmented pressure control |
| FR3039531A1 (zh) | 2015-07-28 | 2017-02-03 | Nexdot | |
| JP6560924B2 (ja) | 2015-07-29 | 2019-08-14 | 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ | 基板処理装置、半導体装置の製造方法及びプログラム |
| JP6502779B2 (ja) | 2015-07-29 | 2019-04-17 | 東京エレクトロン株式会社 | ガス供給系のバルブのリークを検査する方法 |
| JP6688949B2 (ja) | 2015-07-29 | 2020-04-28 | コリア リサーチ インスティチュート オブ スタンダーズ アンド サイエンス | ２次元遷移金属ジカルコゲナイド薄膜の製造方法 |
| US20170032992A1 (en) | 2015-07-31 | 2017-02-02 | Infineon Technologies Ag | Substrate carrier, a method and a processing device |
| EP3329032B1 (en) | 2015-07-31 | 2022-09-21 | Versum Materials US, LLC | Compositions and methods for depositing silicon nitride films |
| KR102420087B1 (ko) | 2015-07-31 | 2022-07-12 | 삼성전자주식회사 | 반도체 소자의 제조 방법 |
| US20170040146A1 (en) | 2015-08-03 | 2017-02-09 | Lam Research Corporation | Plasma etching device with plasma etch resistant coating |
| US10428421B2 (en) | 2015-08-03 | 2019-10-01 | Asm Ip Holding B.V. | Selective deposition on metal or metallic surfaces relative to dielectric surfaces |
| US10087525B2 (en) | 2015-08-04 | 2018-10-02 | Asm Ip Holding B.V. | Variable gap hard stop design |
| US10566185B2 (en) | 2015-08-05 | 2020-02-18 | Asm Ip Holding B.V. | Selective deposition of aluminum and nitrogen containing material |
| JP1549880S (zh) | 2015-08-06 | 2016-05-23 | ||
| US9691645B2 (en) | 2015-08-06 | 2017-06-27 | Applied Materials, Inc. | Bolted wafer chuck thermal management systems and methods for wafer processing systems |
| US10950477B2 (en) | 2015-08-07 | 2021-03-16 | Applied Materials, Inc. | Ceramic heater and esc with enhanced wafer edge performance |
| US10738381B2 (en) | 2015-08-13 | 2020-08-11 | Asm Ip Holding B.V. | Thin film deposition apparatus |
| KR102417930B1 (ko) | 2015-08-13 | 2022-07-06 | 에이에스엠 아이피 홀딩 비.브이. | 증착 장치 및 이를 포함하는 증착 시스템 |
| US9647114B2 (en) | 2015-08-14 | 2017-05-09 | Asm Ip Holding B.V. | Methods of forming highly p-type doped germanium tin films and structures and devices including the films |
| US20170051402A1 (en) | 2015-08-17 | 2017-02-23 | Asm Ip Holding B.V. | Susceptor and substrate processing apparatus |
| US20170051405A1 (en) | 2015-08-18 | 2017-02-23 | Asm Ip Holding B.V. | Method for forming sin or sicn film in trenches by peald |
| JP1549882S (zh) | 2015-08-18 | 2016-05-23 | ||
| JP1550115S (zh) | 2015-08-18 | 2016-05-23 | ||
| US9978610B2 (en) | 2015-08-21 | 2018-05-22 | Lam Research Corporation | Pulsing RF power in etch process to enhance tungsten gapfill performance |
| US9449987B1 (en) | 2015-08-21 | 2016-09-20 | Sandisk Technologies Llc | Three dimensional memory device with epitaxial semiconductor pedestal for peripheral transistors |
| US10410857B2 (en) | 2015-08-24 | 2019-09-10 | Asm Ip Holding B.V. | Formation of SiN thin films |
| US9523148B1 (en) | 2015-08-25 | 2016-12-20 | Asm Ip Holdings B.V. | Process for deposition of titanium oxynitride for use in integrated circuit fabrication |
| US9711345B2 (en) | 2015-08-25 | 2017-07-18 | Asm Ip Holding B.V. | Method for forming aluminum nitride-based film by PEALD |
| KR102540912B1 (ko) | 2015-08-27 | 2023-06-08 | 스미토모 오사카 세멘토 가부시키가이샤 | 정전 척 장치 |
| US9711360B2 (en) | 2015-08-27 | 2017-07-18 | Applied Materials, Inc. | Methods to improve in-film particle performance of amorphous boron-carbon hardmask process in PECVD system |
| KR102420015B1 (ko) | 2015-08-28 | 2022-07-12 | 삼성전자주식회사 | Cs-ald 장치의 샤워헤드 |
| US10121671B2 (en) | 2015-08-28 | 2018-11-06 | Applied Materials, Inc. | Methods of depositing metal films using metal oxyhalide precursors |
| US9455177B1 (en) | 2015-08-31 | 2016-09-27 | Dow Global Technologies Llc | Contact hole formation methods |
| US9673042B2 (en) | 2015-09-01 | 2017-06-06 | Applied Materials, Inc. | Methods and apparatus for in-situ cleaning of copper surfaces and deposition and removal of self-assembled monolayers |
| US11514096B2 (en) | 2015-09-01 | 2022-11-29 | Panjiva, Inc. | Natural language processing for entity resolution |
| JP6486479B2 (ja) | 2015-09-03 | 2019-03-20 | 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ | 半導体装置の製造方法、基板処理装置、プログラム、および供給系 |
| JP1546345S (zh) | 2015-09-04 | 2016-03-22 | ||
| JP6448502B2 (ja) | 2015-09-09 | 2019-01-09 | 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ | 半導体装置の製造方法、基板処理装置及びプログラム |
| TWI642803B (zh) | 2015-09-11 | 2018-12-01 | 慧盛材料美國責任有限公司 | 用於沉積一保形的金屬或類金屬氮化矽膜的方法及所形成的膜 |
| US9601693B1 (en) | 2015-09-24 | 2017-03-21 | Lam Research Corporation | Method for encapsulating a chalcogenide material |
| US10373809B2 (en) | 2015-09-25 | 2019-08-06 | Applied Materials Inc. | Grooved backing plate for standing wave compensation |
| US9960072B2 (en) | 2015-09-29 | 2018-05-01 | Asm Ip Holding B.V. | Variable adjustment for precise matching of multiple chamber cavity housings |
| JP2017069313A (ja) | 2015-09-29 | 2017-04-06 | 株式会社日立国際電気 | 半導体装置の製造方法、基板処理装置、ガス供給システムおよびプログラム |
| KR102395997B1 (ko) | 2015-09-30 | 2022-05-10 | 삼성전자주식회사 | 자기 저항 메모리 소자 및 그 제조 방법 |
| JP6163524B2 (ja) | 2015-09-30 | 2017-07-12 | 株式会社日立国際電気 | 半導体装置の製造方法、基板処理装置およびプログラム |
| KR20180061345A (ko) | 2015-10-02 | 2018-06-07 | 코닝 인코포레이티드 | 파티클 부착을 감소시키기 위한 유리 표면 처리 방법들 |
| US9853101B2 (en) | 2015-10-07 | 2017-12-26 | Taiwan Semiconductor Manufacturing Company, Ltd. | Strained nanowire CMOS device and method of forming |
| US10695794B2 (en) | 2015-10-09 | 2020-06-30 | Asm Ip Holding B.V. | Vapor phase deposition of organic films |
| EP4138121A1 (en) | 2015-10-09 | 2023-02-22 | Applied Materials, Inc. | Diode laser for wafer heating for epi processes |
| EP4089482A1 (en) | 2015-10-13 | 2022-11-16 | Inpria Corporation | Organotin oxide hydroxide patterning compositions, precursors, and patterning |
| USD810705S1 (en) | 2016-04-01 | 2018-02-20 | Veeco Instruments Inc. | Self-centering wafer carrier for chemical vapor deposition |
| USD819580S1 (en) | 2016-04-01 | 2018-06-05 | Veeco Instruments, Inc. | Self-centering wafer carrier for chemical vapor deposition |
| US9909214B2 (en) | 2015-10-15 | 2018-03-06 | Asm Ip Holding B.V. | Method for depositing dielectric film in trenches by PEALD |
| TWI740848B (zh) | 2015-10-16 | 2021-10-01 | 荷蘭商Ａｓｍ智慧財產控股公司 | 實施原子層沉積以得閘極介電質 |
| US9941425B2 (en) | 2015-10-16 | 2018-04-10 | Asm Ip Holdings B.V. | Photoactive devices and materials |
| JP6464990B2 (ja) | 2015-10-21 | 2019-02-06 | 東京エレクトロン株式会社 | 縦型熱処理装置 |
| US10211308B2 (en) | 2015-10-21 | 2019-02-19 | Asm Ip Holding B.V. | NbMC layers |
| KR102424720B1 (ko) | 2015-10-22 | 2022-07-25 | 삼성전자주식회사 | 수직형 메모리 장치 및 이의 제조 방법 |
| US10358721B2 (en) | 2015-10-22 | 2019-07-23 | Asm Ip Holding B.V. | Semiconductor manufacturing system including deposition apparatus |
| WO2017070192A1 (en) | 2015-10-22 | 2017-04-27 | Applied Materials, Inc. | METHODS OF DEPOSITING FLOWABLE FILMS COMPRISING SiO and SiN |
| US20180312966A1 (en) | 2015-10-23 | 2018-11-01 | Applied Materials, Inc. | Methods For Spatial Metal Atomic Layer Deposition |
| CN105253917B (zh) | 2015-10-28 | 2017-07-28 | 昆明理工大学 | 一种化学气相沉积金属铼用前驱体的制备方法 |
| US10322384B2 (en) | 2015-11-09 | 2019-06-18 | Asm Ip Holding B.V. | Counter flow mixer for process chamber |
| USD800782S1 (en) | 2015-11-09 | 2017-10-24 | Eaton Corporation | Drive plate |
| US9455138B1 (en) | 2015-11-10 | 2016-09-27 | Asm Ip Holding B.V. | Method for forming dielectric film in trenches by PEALD using H-containing gas |
| US9786491B2 (en) | 2015-11-12 | 2017-10-10 | Asm Ip Holding B.V. | Formation of SiOCN thin films |
| US9786492B2 (en) | 2015-11-12 | 2017-10-10 | Asm Ip Holding B.V. | Formation of SiOCN thin films |
| TWD177995S (zh) | 2015-11-18 | 2016-09-01 | Asm Ip Holding Bv | 用於半導體製造設備之氣體供應板 |
| US9996004B2 (en) | 2015-11-20 | 2018-06-12 | Lam Research Corporation | EUV photopatterning of vapor-deposited metal oxide-containing hardmasks |
| WO2017091345A1 (en) | 2015-11-25 | 2017-06-01 | Applied Materials, Inc. | New materials for tensile stress and low contact resistance and method of forming |
| JP6681646B2 (ja) | 2015-11-27 | 2020-04-15 | 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ | 基板処理装置、半導体装置の製造方法及びプログラム |
| US9905420B2 (en) | 2015-12-01 | 2018-02-27 | Asm Ip Holding B.V. | Methods of forming silicon germanium tin films and structures and devices including the films |
| US20170167023A1 (en) | 2015-12-09 | 2017-06-15 | Lam Research Corporation | Silicon or silicon carbide gas injector for substrate processing systems |
| JP6613864B2 (ja) | 2015-12-14 | 2019-12-04 | Ｔｄｋ株式会社 | ミニエンバイロメント装置 |
| US10332767B2 (en) | 2015-12-17 | 2019-06-25 | Asm Ip Holding B.V. | Substrate transport device and substrate processing apparatus |
| KR102423818B1 (ko) | 2015-12-18 | 2022-07-21 | 삼성전자주식회사 | 정전척 어셈블리 및 그를 포함하는 반도체 제조장치, 그리고 정전척 온도 측정방법 |
| US20170178899A1 (en) | 2015-12-18 | 2017-06-22 | Lam Research Corporation | Directional deposition on patterned structures |
| WO2017105515A1 (en) | 2015-12-18 | 2017-06-22 | Intel Corporation | Stacked transistors |
| TWI716511B (zh) | 2015-12-19 | 2021-01-21 | 美商應用材料股份有限公司 | 用於鎢原子層沉積製程作為成核層之正形非晶矽 |
| US10087547B2 (en) | 2015-12-21 | 2018-10-02 | The Regents Of The University Of California | Growth of single crystal III-V semiconductors on amorphous substrates |
| US9607837B1 (en) | 2015-12-21 | 2017-03-28 | Asm Ip Holding B.V. | Method for forming silicon oxide cap layer for solid state diffusion process |
| AT518081B1 (de) | 2015-12-22 | 2017-07-15 | Sico Tech Gmbh | Injektor aus Silizium für die Halbleiterindustrie |
| CH711990A2 (de) | 2015-12-22 | 2017-06-30 | Interglass Tech Ag | Vakuumbeschichtungsanlage zum Beschichten von Linsen. |
| US9633838B2 (en) | 2015-12-28 | 2017-04-25 | L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude | Vapor deposition of silicon-containing films using penta-substituted disilanes |
| US9627221B1 (en) | 2015-12-28 | 2017-04-18 | Asm Ip Holding B.V. | Continuous process incorporating atomic layer etching |
| US9735024B2 (en) | 2015-12-28 | 2017-08-15 | Asm Ip Holding B.V. | Method of atomic layer etching using functional group-containing fluorocarbon |
| US11139308B2 (en) | 2015-12-29 | 2021-10-05 | Asm Ip Holding B.V. | Atomic layer deposition of III-V compounds to form V-NAND devices |
| US20170191685A1 (en) | 2015-12-30 | 2017-07-06 | Lam Research Corporation | Self-sustained in-situ thermal control apparatus |
| US10415137B2 (en) | 2016-01-01 | 2019-09-17 | Applied Materials, Inc. | Non-metallic thermal CVD/ALD Gas Injector and Purge Systems |
| TWD178425S (zh) | 2016-01-08 | 2016-09-21 | Asm Ip Holding Bv | 用於半導體製造設備的電極板 |
| TWD178424S (zh) | 2016-01-08 | 2016-09-21 | Asm Ip Holding Bv | 用於半導體製造設備的氣流控制板 |
| TWD178698S (zh) | 2016-01-08 | 2016-10-01 | Asm Ip Holding Bv | 用於半導體製造設備的反應器外壁 |
| TWD178699S (zh) | 2016-01-08 | 2016-10-01 | Asm Ip Holding Bv | 用於半導體製造設備的氣體分散板 |
| US9412648B1 (en) | 2016-01-11 | 2016-08-09 | Taiwan Semiconductor Manufacturing Company, Ltd. | Via patterning using multiple photo multiple etch |
| US10923381B2 (en) | 2016-01-19 | 2021-02-16 | Sumitomo Osaka Cement Co., Ltd. | Electrostatic chuck device |
| DE102016100963A1 (de) | 2016-01-21 | 2017-07-27 | Knorr-Bremse Systeme für Schienenfahrzeuge GmbH | Luftversorgungsanlage |
| US20170213960A1 (en) | 2016-01-26 | 2017-07-27 | Arm Ltd. | Fabrication and operation of correlated electron material devices |
| KR20170090194A (ko) | 2016-01-28 | 2017-08-07 | 삼성전자주식회사 | 복수 개의 가스 배출관 들 및 가스 센서들을 가진 반도체 소자 제조 설비 |
| US10153351B2 (en) | 2016-01-29 | 2018-12-11 | Taiwan Semiconductor Manufacturing Co., Ltd. | Semiconductor device and a method for fabricating the same |
| US9496225B1 (en) | 2016-02-08 | 2016-11-15 | International Business Machines Corporation | Recessed metal liner contact with copper fill |
| US10865477B2 (en) | 2016-02-08 | 2020-12-15 | Illinois Tool Works Inc. | Method and system for the localized deposit of metal on a surface |
| US9570302B1 (en) | 2016-02-10 | 2017-02-14 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method of patterning a material layer |
| US10364497B2 (en) | 2016-02-11 | 2019-07-30 | Intermolecular, Inc. | Vapor based site-isolated processing systems and methods |
| CA2920646A1 (en) | 2016-02-12 | 2017-08-12 | Seastar Chemicals Inc. | Organometallic compound and method |
| JP6538582B2 (ja) | 2016-02-15 | 2019-07-03 | 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ | 基板処理装置、半導体装置の製造方法およびプログラム |
| US10468251B2 (en) | 2016-02-19 | 2019-11-05 | Asm Ip Holding B.V. | Method for forming spacers using silicon nitride film for spacer-defined multiple patterning |
| US9754779B1 (en) | 2016-02-19 | 2017-09-05 | Asm Ip Holding B.V. | Method for forming silicon nitride film selectively on sidewalls or flat surfaces of trenches |
| US10529554B2 (en) | 2016-02-19 | 2020-01-07 | Asm Ip Holding B.V. | Method for forming silicon nitride film selectively on sidewalls or flat surfaces of trenches |
| SG11201806624XA (en) | 2016-02-19 | 2018-09-27 | Merck Patent Gmbh | Deposition of molybdenum thin films using a molybdenum carbonyl precursor |
| US9666528B1 (en) | 2016-02-23 | 2017-05-30 | International Business Machines Corporation | BEOL vertical fuse formed over air gap |
| US9748145B1 (en) | 2016-02-29 | 2017-08-29 | Globalfoundries Inc. | Semiconductor devices with varying threshold voltage and fabrication methods thereof |
| USD855089S1 (en) | 2016-02-29 | 2019-07-30 | Moldman Systems Llc | Mixer assembly |
| JP6240695B2 (ja) | 2016-03-02 | 2017-11-29 | 株式会社日立国際電気 | 基板処理装置、半導体装置の製造方法及びプログラム |
| US10018920B2 (en) | 2016-03-04 | 2018-07-10 | Taiwan Semiconductor Manufacturing Co., Ltd. | Lithography patterning with a gas phase resist |
| US10073342B2 (en) | 2016-03-04 | 2018-09-11 | Micron Technology, Inc. | Method of forming patterns |
| US11114332B2 (en) | 2016-03-07 | 2021-09-07 | Globalwafers Co., Ltd. | Semiconductor on insulator structure comprising a plasma nitride layer and method of manufacture thereof |
| US10501866B2 (en) | 2016-03-09 | 2019-12-10 | Asm Ip Holding B.V. | Gas distribution apparatus for improved film uniformity in an epitaxial system |
| US10134581B2 (en) | 2016-03-13 | 2018-11-20 | Applied Materials, Inc. | Methods and apparatus for selective dry etch |
| TWI722132B (zh) | 2016-03-13 | 2021-03-21 | 美商應用材料股份有限公司 | 用於間隔墊應用之氮化矽薄膜的選擇性沉積 |
| CN205448240U (zh) | 2016-03-15 | 2016-08-10 | 核工业理化工程研究院华核新技术开发公司 | 一种高效型移动式自循环核级空气净化器 |
| KR20170107323A (ko) | 2016-03-15 | 2017-09-25 | 연세대학교 산학협력단 | 전이금속 칼코겐 화합물 합금 및 그의 제조방법 |
| US10134672B2 (en) | 2016-03-15 | 2018-11-20 | Toshiba Memory Corporation | Semiconductor memory device having a stepped structure and contact wirings formed thereon |
| JP6690496B2 (ja) | 2016-03-17 | 2020-04-28 | 東京エレクトロン株式会社 | 成膜方法及び成膜装置 |
| KR102632725B1 (ko) | 2016-03-17 | 2024-02-05 | 에이에스엠 아이피 홀딩 비.브이. | 기판 지지 플레이트 및 이를 포함하는 박막 증착 장치 및 박막 증착 방법 |
| KR101758892B1 (ko) | 2016-03-18 | 2017-07-17 | 정예호 | 고효율 저소음용 미니 청소기 |
| US10343920B2 (en) | 2016-03-18 | 2019-07-09 | Asm Ip Holding B.V. | Aligned carbon nanotubes |
| US9837355B2 (en) | 2016-03-22 | 2017-12-05 | International Business Machines Corporation | Method for maximizing air gap in back end of the line interconnect through via landing modification |
| JP6576277B2 (ja) | 2016-03-23 | 2019-09-18 | 東京エレクトロン株式会社 | 窒化膜の形成方法 |
| US9892913B2 (en) | 2016-03-24 | 2018-02-13 | Asm Ip Holding B.V. | Radial and thickness control via biased multi-port injection settings |
| USD807494S1 (en) | 2016-03-24 | 2018-01-09 | Lg Electronics Inc. | Cover for air purifier with humidifier |
| CN111627807B (zh) | 2016-03-28 | 2023-08-29 | 株式会社日立高新技术 | 等离子处理方法以及等离子处理装置 |
| JP6566904B2 (ja) | 2016-03-29 | 2019-08-28 | 東京エレクトロン株式会社 | 基板処理装置 |
| US9850161B2 (en) | 2016-03-29 | 2017-12-26 | Applied Materials, Inc. | Fluoride glazes from fluorine ion treatment |
| US10573540B2 (en) | 2016-03-30 | 2020-02-25 | Shibaura Mechatronics Corporation | Substrate processing apparatus and substrate processing method |
| WO2017171739A1 (en) | 2016-03-30 | 2017-10-05 | Intel Corporation | Transistor gate-channel arrangements |
| JP6608753B2 (ja) | 2016-03-31 | 2019-11-20 | 株式会社ノリタケカンパニーリミテド | ＰｄＲｕ合金電極材料およびその製造方法 |
| SG11201808424UA (en) | 2016-04-01 | 2018-10-30 | 3M Innovative Properties Co | Roll-to-roll atomic layer deposition apparatus and method |
| USD793526S1 (en) | 2016-04-08 | 2017-08-01 | Applied Materials, Inc. | Showerhead for a semiconductor processing chamber |
| JP6095825B2 (ja) | 2016-04-08 | 2017-03-15 | 株式会社日立国際電気 | 基板処理装置および半導体装置の製造方法 |
| USD794753S1 (en) | 2016-04-08 | 2017-08-15 | Applied Materials, Inc. | Showerhead for a semiconductor processing chamber |
| US10049913B2 (en) | 2016-04-12 | 2018-08-14 | Tokyo Electron Limited | Methods for SiO2 filling of fine recessed features and selective SiO2 deposition on catalytic surfaces |
| US10224238B2 (en) | 2016-04-12 | 2019-03-05 | Apple Inc. | Electrical components having metal traces with protected sidewalls |
| US10388492B2 (en) | 2016-04-14 | 2019-08-20 | Fm Industries, Inc. | Coated semiconductor processing members having chlorine and fluorine plasma erosion resistance and complex oxide coatings therefor |
| US10204782B2 (en) | 2016-04-18 | 2019-02-12 | Imec Vzw | Combined anneal and selective deposition process |
| US10190213B2 (en) | 2016-04-21 | 2019-01-29 | Asm Ip Holding B.V. | Deposition of metal borides |
| US10087522B2 (en) | 2016-04-21 | 2018-10-02 | Asm Ip Holding B.V. | Deposition of metal borides |
| US10865475B2 (en) | 2016-04-21 | 2020-12-15 | Asm Ip Holding B.V. | Deposition of metal borides and silicides |
| WO2017184223A1 (en) | 2016-04-22 | 2017-10-26 | Applied Materials, Inc. | Substrate support pedestal having plasma confinement features |
| US10438860B2 (en) | 2016-04-22 | 2019-10-08 | Applied Materials, Inc. | Dynamic wafer leveling/tilting/swiveling steps for use during a chemical vapor deposition process |
| US11326253B2 (en) | 2016-04-27 | 2022-05-10 | Applied Materials, Inc. | Atomic layer deposition of protective coatings for semiconductor process chamber components |
| KR101820237B1 (ko) | 2016-04-29 | 2018-01-19 | 한양대학교 산학협력단 | 가압식 금속 단원자층 제조 방법, 금속 단원자층 구조체 및 가압식 금속 단원자층 제조 장치 |
| US10367080B2 (en) | 2016-05-02 | 2019-07-30 | Asm Ip Holding B.V. | Method of forming a germanium oxynitride film |
| US10032628B2 (en) | 2016-05-02 | 2018-07-24 | Asm Ip Holding B.V. | Source/drain performance through conformal solid state doping |
| KR102378021B1 (ko) | 2016-05-06 | 2022-03-23 | 에이에스엠 아이피 홀딩 비.브이. | SiOC 박막의 형성 |
| US10115586B2 (en) | 2016-05-08 | 2018-10-30 | Tokyo Electron Limited | Method for depositing a planarization layer using polymerization chemical vapor deposition |
| KR102592471B1 (ko) | 2016-05-17 | 2023-10-20 | 에이에스엠 아이피 홀딩 비.브이. | 금속 배선 형성 방법 및 이를 이용한 반도체 장치의 제조 방법 |
| US9680268B1 (en) | 2016-05-18 | 2017-06-13 | Itt Manufacturing Enterprises Llc | Genderless electrical connectors |
| US10504754B2 (en) | 2016-05-19 | 2019-12-10 | Applied Materials, Inc. | Systems and methods for improved semiconductor etching and component protection |
| US10522371B2 (en) | 2016-05-19 | 2019-12-31 | Applied Materials, Inc. | Systems and methods for improved semiconductor etching and component protection |
| USD849662S1 (en) | 2016-05-21 | 2019-05-28 | Worthington Industries, Inc. | Cylinder support system |
| US9987747B2 (en) | 2016-05-24 | 2018-06-05 | Semes Co., Ltd. | Stocker for receiving cassettes and method of teaching a stocker robot disposed therein |
| US11453943B2 (en) | 2016-05-25 | 2022-09-27 | Asm Ip Holding B.V. | Method for forming carbon-containing silicon/metal oxide or nitride film by ALD using silicon precursor and hydrocarbon precursor |
| WO2017210140A1 (en) | 2016-05-29 | 2017-12-07 | Tokyo Electron Limited | Method of selective silicon nitride etching |
| US10373820B2 (en) | 2016-06-01 | 2019-08-06 | Asm Ip Holding B.V. | Deposition of organic films |
| JP6880076B2 (ja) | 2016-06-03 | 2021-06-02 | アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ | 基板距離の監視 |
| KR102326377B1 (ko) | 2016-06-07 | 2021-11-15 | 가부시키가이샤 코쿠사이 엘렉트릭 | 기판 처리 장치, 반도체 장치의 제조 방법 및 프로그램 |
| JP2017220011A (ja) | 2016-06-07 | 2017-12-14 | 株式会社神戸製鋼所 | 積層膜、表示装置及び入力装置 |
| CN106011785B (zh) | 2016-06-07 | 2018-10-16 | 上海纳米技术及应用国家工程研究中心有限公司 | 一种原子层沉积制备高均匀性Nb掺杂TiO2透明导电薄膜的方法 |
| US10354873B2 (en) | 2016-06-08 | 2019-07-16 | Tokyo Electron Limited | Organic mandrel protection process |
| US10014212B2 (en) | 2016-06-08 | 2018-07-03 | Asm Ip Holding B.V. | Selective deposition of metallic films |
| US10002958B2 (en) | 2016-06-08 | 2018-06-19 | The United States Of America, As Represented By The Secretary Of The Navy | Diamond on III-nitride device |
| WO2017218561A1 (en) | 2016-06-13 | 2017-12-21 | Gvd Coproraton | Methods for plasma depositing polymers comprising cyclic siloxanes and related compositions and articles |
| JP6585551B2 (ja) | 2016-06-15 | 2019-10-02 | 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ | 半導体装置の製造方法、基板処理装置、およびプログラム |
| USD785766S1 (en) | 2016-06-15 | 2017-05-02 | Asm Ip Holding B.V. | Shower plate |
| US9850573B1 (en) | 2016-06-23 | 2017-12-26 | Applied Materials, Inc. | Non-line of sight deposition of erbium based plasma resistant ceramic coating |
| US20170372919A1 (en) | 2016-06-25 | 2017-12-28 | Applied Materials, Inc. | Flowable Amorphous Silicon Films For Gapfill Applications |
| US10217863B2 (en) | 2016-06-28 | 2019-02-26 | International Business Machines Corporation | Fabrication of a vertical fin field effect transistor with an asymmetric gate structure |
| US9824893B1 (en) | 2016-06-28 | 2017-11-21 | Lam Research Corporation | Tin oxide thin film spacers in semiconductor device manufacturing |
| US10388509B2 (en) | 2016-06-28 | 2019-08-20 | Asm Ip Holding B.V. | Formation of epitaxial layers via dislocation filtering |
| CN110265322B (zh) | 2016-06-30 | 2020-10-30 | 株式会社国际电气 | 衬底处理装置、半导体器件的制造方法及记录介质 |
| US20160314962A1 (en) | 2016-06-30 | 2016-10-27 | American Air Liquide, Inc. | Cyclic organoaminosilane precursors for forming silicon-containing films and methods of using the same |
| US20160315168A1 (en) | 2016-06-30 | 2016-10-27 | L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude | Process for forming gate insulators for tft structures |
| US10062563B2 (en) | 2016-07-01 | 2018-08-28 | Lam Research Corporation | Selective atomic layer deposition with post-dose treatment |
| WO2018008088A1 (ja) | 2016-07-05 | 2018-01-11 | 株式会社日立国際電気 | 基板処理装置、ガスノズルおよび半導体装置の製造方法 |
| USD829306S1 (en) | 2016-07-06 | 2018-09-25 | Asm Ip Holding B.V. | Shower plate |
| KR102576702B1 (ko) | 2016-07-06 | 2023-09-08 | 삼성전자주식회사 | 증착 공정 모니터링 시스템, 및 그 시스템을 이용한 증착 공정 제어방법과 반도체 소자 제조방법 |
| US9812319B1 (en) | 2016-07-06 | 2017-11-07 | Asm Ip Holding B.V. | Method for forming film filled in trench without seam or void |
| US10612137B2 (en) | 2016-07-08 | 2020-04-07 | Asm Ip Holdings B.V. | Organic reactants for atomic layer deposition |
| EP3267187B1 (en) | 2016-07-08 | 2020-04-15 | Volvo Car Corporation | Silicon carbide based field effect gas sensor for high temperature applications |
| US9859151B1 (en) | 2016-07-08 | 2018-01-02 | Asm Ip Holding B.V. | Selective film deposition method to form air gaps |
| USD793352S1 (en) | 2016-07-11 | 2017-08-01 | Asm Ip Holding B.V. | Getter plate |
| JP6793243B2 (ja) | 2016-07-14 | 2020-12-02 | インテグリス・インコーポレーテッド | ＭｏＯＣｌ４を使用することによるＣＶＤ Ｍｏ堆積 |
| US9793135B1 (en) | 2016-07-14 | 2017-10-17 | ASM IP Holding B.V | Method of cyclic dry etching using etchant film |
| CN119177427A (zh) | 2016-07-19 | 2024-12-24 | 应用材料公司 | 可流动含硅膜的沉积 |
| US10714385B2 (en) | 2016-07-19 | 2020-07-14 | Asm Ip Holding B.V. | Selective deposition of tungsten |
| US9799736B1 (en) | 2016-07-20 | 2017-10-24 | International Business Machines Corporation | High acceptor level doping in silicon germanium |
| JP6616258B2 (ja) | 2016-07-26 | 2019-12-04 | 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ | 基板処理装置、蓋部カバーおよび半導体装置の製造方法 |
| KR102354490B1 (ko) | 2016-07-27 | 2022-01-21 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 방법 |
| US20180033614A1 (en) | 2016-07-27 | 2018-02-01 | Versum Materials Us, Llc | Compositions and Methods Using Same for Carbon Doped Silicon Containing Films |
| KR102532607B1 (ko) | 2016-07-28 | 2023-05-15 | 에이에스엠 아이피 홀딩 비.브이. | 기판 가공 장치 및 그 동작 방법 |
| US10177025B2 (en) | 2016-07-28 | 2019-01-08 | Asm Ip Holding B.V. | Method and apparatus for filling a gap |
| US9812320B1 (en) | 2016-07-28 | 2017-11-07 | Asm Ip Holding B.V. | Method and apparatus for filling a gap |
| US9887082B1 (en) | 2016-07-28 | 2018-02-06 | Asm Ip Holding B.V. | Method and apparatus for filling a gap |
| US10395919B2 (en) | 2016-07-28 | 2019-08-27 | Asm Ip Holding B.V. | Method and apparatus for filling a gap |
| US10347547B2 (en) | 2016-08-09 | 2019-07-09 | Lam Research Corporation | Suppressing interfacial reactions by varying the wafer temperature throughout deposition |
| EP3282037B1 (en) | 2016-08-09 | 2022-12-07 | IMEC vzw | Formation of a transition metal nitride |
| US9865456B1 (en) | 2016-08-12 | 2018-01-09 | Micron Technology, Inc. | Methods of forming silicon nitride by atomic layer deposition and methods of forming semiconductor structures |
| US10573522B2 (en) | 2016-08-16 | 2020-02-25 | Lam Research Corporation | Method for preventing line bending during metal fill process |
| KR102429608B1 (ko) | 2016-08-17 | 2022-08-04 | 삼성전자주식회사 | 반도체 장치 및 그 제조 방법 |
| KR102613349B1 (ko) | 2016-08-25 | 2023-12-14 | 에이에스엠 아이피 홀딩 비.브이. | 배기 장치 및 이를 이용한 기판 가공 장치와 박막 제조 방법 |
| TW201825623A (zh) | 2016-08-30 | 2018-07-16 | 美商康寧公司 | 用於片材接合的矽氧烷電漿聚合物 |
| US10229851B2 (en) | 2016-08-30 | 2019-03-12 | International Business Machines Corporation | Self-forming barrier for use in air gap formation |
| CA2974387A1 (en) | 2016-08-30 | 2018-02-28 | Rolls-Royce Corporation | Swirled flow chemical vapor deposition |
| US10468244B2 (en) | 2016-08-30 | 2019-11-05 | Versum Materials Us, Llc | Precursors and flowable CVD methods for making low-K films to fill surface features |
| US10037884B2 (en) | 2016-08-31 | 2018-07-31 | Lam Research Corporation | Selective atomic layer deposition for gapfill using sacrificial underlayer |
| US10273575B2 (en) | 2016-08-31 | 2019-04-30 | Kennametal Inc. | Composite refractory coatings and applications thereof |
| US10090316B2 (en) | 2016-09-01 | 2018-10-02 | Asm Ip Holding B.V. | 3D stacked multilayer semiconductor memory using doped select transistor channel |
| US10269714B2 (en) | 2016-09-06 | 2019-04-23 | International Business Machines Corporation | Low resistance contacts including intermetallic alloy of nickel, platinum, titanium, aluminum and type IV semiconductor elements |
| US9865455B1 (en) | 2016-09-07 | 2018-01-09 | Lam Research Corporation | Nitride film formed by plasma-enhanced and thermal atomic layer deposition process |
| AU201711335S (en) | 2016-09-08 | 2017-03-29 | Battlemax Pty Ltd | Suction Cover |
| JP6710130B2 (ja) | 2016-09-13 | 2020-06-17 | 東京エレクトロン株式会社 | 基板処理装置 |
| JP6456893B2 (ja) | 2016-09-26 | 2019-01-23 | 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ | 半導体装置の製造方法、記録媒体および基板処理装置 |
| JP6710134B2 (ja) | 2016-09-27 | 2020-06-17 | 東京エレクトロン株式会社 | ガス導入機構及び処理装置 |
| KR102600998B1 (ko) | 2016-09-28 | 2023-11-13 | 삼성전자주식회사 | 반도체 장치 |
| JP6550029B2 (ja) | 2016-09-28 | 2019-07-24 | 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ | 基板処理装置、ノズル基部および半導体装置の製造方法 |
| JP6270952B1 (ja) | 2016-09-28 | 2018-01-31 | 株式会社日立国際電気 | 基板処理装置、半導体装置の製造方法および記録媒体。 |
| US9847221B1 (en) | 2016-09-29 | 2017-12-19 | Lam Research Corporation | Low temperature formation of high quality silicon oxide films in semiconductor device manufacturing |
| US11926894B2 (en) | 2016-09-30 | 2024-03-12 | Asm Ip Holding B.V. | Reactant vaporizer and related systems and methods |
| US9997606B2 (en) | 2016-09-30 | 2018-06-12 | International Business Machines Corporation | Fully depleted SOI device for reducing parasitic back gate capacitance |
| US10876205B2 (en) | 2016-09-30 | 2020-12-29 | Asm Ip Holding B.V. | Reactant vaporizer and related systems and methods |
| US10546729B2 (en) | 2016-10-04 | 2020-01-28 | Applied Materials, Inc. | Dual-channel showerhead with improved profile |
| FR3057102A1 (fr) | 2016-10-05 | 2018-04-06 | Stmicroelectronics Sa | Procede de depot par epitaxie en phase gazeuse |
| US9824884B1 (en) | 2016-10-06 | 2017-11-21 | Lam Research Corporation | Method for depositing metals free ald silicon nitride films using halide-based precursors |
| US9842835B1 (en) | 2016-10-10 | 2017-12-12 | International Business Machines Corporation | High density nanosheet diodes |
| US10573549B2 (en) | 2016-12-01 | 2020-02-25 | Lam Research Corporation | Pad raising mechanism in wafer positioning pedestal for semiconductor processing |
| TWI721216B (zh) | 2016-10-13 | 2021-03-11 | 美商應用材料股份有限公司 | 用於電漿處理裝置中的腔室部件、包含其之裝置及製造其之方法 |
| US10410943B2 (en) | 2016-10-13 | 2019-09-10 | Asm Ip Holding B.V. | Method for passivating a surface of a semiconductor and related systems |
| US10643826B2 (en) | 2016-10-26 | 2020-05-05 | Asm Ip Holdings B.V. | Methods for thermally calibrating reaction chambers |
| US11532757B2 (en) | 2016-10-27 | 2022-12-20 | Asm Ip Holding B.V. | Deposition of charge trapping layers |
| US20170044664A1 (en) | 2016-10-28 | 2017-02-16 | L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude | Hafnium-containing film forming compositions for vapor deposition of hafnium-containing films |
| US10714350B2 (en) | 2016-11-01 | 2020-07-14 | ASM IP Holdings, B.V. | Methods for forming a transition metal niobium nitride film on a substrate by atomic layer deposition and related semiconductor device structures |
| CN206145834U (zh) | 2016-11-01 | 2017-05-03 | 深圳信息职业技术学院 | 一种可移动式空气净化装置 |
| US10435790B2 (en) | 2016-11-01 | 2019-10-08 | Asm Ip Holding B.V. | Method of subatmospheric plasma-enhanced ALD using capacitively coupled electrodes with narrow gap |
| US10229833B2 (en) | 2016-11-01 | 2019-03-12 | Asm Ip Holding B.V. | Methods for forming a transition metal nitride film on a substrate by atomic layer deposition and related semiconductor device structures |
| US10643904B2 (en) | 2016-11-01 | 2020-05-05 | Asm Ip Holdings B.V. | Methods for forming a semiconductor device and related semiconductor device structures |
| US10134757B2 (en) | 2016-11-07 | 2018-11-20 | Asm Ip Holding B.V. | Method of processing a substrate and a device manufactured by using the method |
| KR101840378B1 (ko) | 2016-11-09 | 2018-03-21 | 한국화학연구원 | 올레핀 복분해 반응용 촉매 및 이의 제조방법 |
| US10134579B2 (en)* | 2016-11-14 | 2018-11-20 | Lam Research Corporation | Method for high modulus ALD SiO2 spacer |
| JP6737139B2 (ja) | 2016-11-14 | 2020-08-05 | 東京エレクトロン株式会社 | ガスインジェクタ、及び縦型熱処理装置 |
| KR102546317B1 (ko) | 2016-11-15 | 2023-06-21 | 에이에스엠 아이피 홀딩 비.브이. | 기체 공급 유닛 및 이를 포함하는 기판 처리 장치 |
| KR102147174B1 (ko) | 2016-11-18 | 2020-08-28 | 가부시키가이샤 코쿠사이 엘렉트릭 | 기판 처리 장치, 반응관 구조 및 반도체 장치의 제조 방법 |
| JP6804270B2 (ja) | 2016-11-21 | 2020-12-23 | 東京エレクトロン株式会社 | 基板処理装置、および基板処理方法 |
| US20180148832A1 (en) | 2016-11-25 | 2018-05-31 | Applied Materials, Inc. | Methods for depositing flowable carbon films using hot wire chemical vapor deposition |
| US10340135B2 (en) | 2016-11-28 | 2019-07-02 | Asm Ip Holding B.V. | Method of topologically restricted plasma-enhanced cyclic deposition of silicon or metal nitride |
| US9991277B1 (en) | 2016-11-28 | 2018-06-05 | Sandisk Technologies Llc | Three-dimensional memory device with discrete self-aligned charge storage elements and method of making thereof |
| US10186420B2 (en) | 2016-11-29 | 2019-01-22 | Asm Ip Holding B.V. | Formation of silicon-containing thin films |
| US10619242B2 (en) | 2016-12-02 | 2020-04-14 | Asm Ip Holding B.V. | Atomic layer deposition of rhenium containing thin films |
| US11761084B2 (en) | 2016-12-02 | 2023-09-19 | Asm Ip Holding B.V. | Substrate processing apparatus and method of processing substrate |
| JP6824717B2 (ja) | 2016-12-09 | 2021-02-03 | 東京エレクトロン株式会社 | ＳｉＣ膜の成膜方法 |
| US10192734B2 (en) | 2016-12-11 | 2019-01-29 | L'Air Liquide, Société Anonyme pour l'Etude et l'Exploration des Procédés Georges Claude | Short inorganic trisilylamine-based polysilazanes for thin film deposition |
| US10604841B2 (en) | 2016-12-14 | 2020-03-31 | Lam Research Corporation | Integrated showerhead with thermal control for delivering radical and precursor gas to a downstream chamber to enable remote plasma film deposition |
| KR102762543B1 (ko) | 2016-12-14 | 2025-02-05 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치 |
| US20190273133A1 (en) | 2016-12-14 | 2019-09-05 | Intel Corporation | Transistor source/drain amorphous interlayer arrangements |
| US9916980B1 (en) | 2016-12-15 | 2018-03-13 | Asm Ip Holding B.V. | Method of forming a structure on a substrate |
| US11447861B2 (en) | 2016-12-15 | 2022-09-20 | Asm Ip Holding B.V. | Sequential infiltration synthesis apparatus and a method of forming a patterned structure |
| US10801106B2 (en) | 2016-12-15 | 2020-10-13 | Asm Ip Holding B.V. | Shower plate structure for exhausting deposition inhibiting gas |
| USD834686S1 (en) | 2016-12-15 | 2018-11-27 | Asm Ip Holding B.V. | Shower plate |
| US10591078B2 (en) | 2016-12-15 | 2020-03-17 | The Boeing Company | Fluid flow control device |
| US11581186B2 (en) | 2016-12-15 | 2023-02-14 | Asm Ip Holding B.V. | Sequential infiltration synthesis apparatus |
| JP2020502790A (ja) | 2016-12-15 | 2020-01-23 | アーエスエム・イーぺー・ホールディング・ベスローテン・フェンノートシャップ | 半導体処理装置 |
| CN108227412A (zh) | 2016-12-15 | 2018-06-29 | Imec 非营利协会 | 光刻掩模层 |
| US9960033B1 (en) | 2016-12-16 | 2018-05-01 | Asm Ip Holding B.V. | Method of depositing and etching Si-containing film |
| KR102700194B1 (ko) | 2016-12-19 | 2024-08-28 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치 |
| US20180174801A1 (en) | 2016-12-21 | 2018-06-21 | Ulvac Technologies, Inc. | Apparatuses and methods for surface treatment |
| US10269558B2 (en) | 2016-12-22 | 2019-04-23 | Asm Ip Holding B.V. | Method of forming a structure on a substrate |
| JP6862821B2 (ja) | 2016-12-26 | 2021-04-21 | 東京エレクトロン株式会社 | 成膜装置、成膜方法及び断熱部材 |
| US10867788B2 (en) | 2016-12-28 | 2020-12-15 | Asm Ip Holding B.V. | Method of forming a structure on a substrate |
| US20180187303A1 (en) | 2016-12-30 | 2018-07-05 | L'air Liquide, Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude | Lanthanide precursors and deposition of lanthanide-containing films using the same |
| US10049426B2 (en) | 2017-01-03 | 2018-08-14 | Qualcomm Incorporated | Draw call visibility stream |
| US11390950B2 (en) | 2017-01-10 | 2022-07-19 | Asm Ip Holding B.V. | Reactor system and method to reduce residue buildup during a film deposition process |
| WO2018136652A1 (en) | 2017-01-18 | 2018-07-26 | Tokyo Electron Limited | Method of preferential silicon nitride etching using sulfur hexafluoride |
| US10186400B2 (en) | 2017-01-20 | 2019-01-22 | Applied Materials, Inc. | Multi-layer plasma resistant coating by atomic layer deposition |
| JP1584241S (zh) | 2017-01-31 | 2017-08-21 | ||
| JP1584906S (zh) | 2017-01-31 | 2017-08-28 | ||
| US10822458B2 (en) | 2017-02-08 | 2020-11-03 | Versum Materials Us, Llc | Organoamino-functionalized linear and cyclic oligosiloxanes for deposition of silicon-containing films |
| US10655221B2 (en) | 2017-02-09 | 2020-05-19 | Asm Ip Holding B.V. | Method for depositing oxide film by thermal ALD and PEALD |
| US10468261B2 (en) | 2017-02-15 | 2019-11-05 | Asm Ip Holding B.V. | Methods for forming a metallic film on a substrate by cyclical deposition and related semiconductor device structures |
| JP2018133471A (ja) | 2017-02-16 | 2018-08-23 | 漢民科技股▲分▼有限公司 | 気相成膜装置 |
| CN106895521A (zh) | 2017-03-01 | 2017-06-27 | 大连葆光节能空调设备厂 | 恒温、恒湿、恒净静室内空气系统 |
| CA176724S (en) | 2017-03-02 | 2018-07-03 | Ebm Papst Landshut Gmbh | Engine cap |
| JP2018148143A (ja) | 2017-03-08 | 2018-09-20 | 株式会社東芝 | シャワープレート、処理装置、及び吐出方法 |
| JP6949515B2 (ja) | 2017-03-15 | 2021-10-13 | ソニーセミコンダクタソリューションズ株式会社 | カメラモジュール及びその製造方法、並びに、電子機器 |
| US11081337B2 (en) | 2017-03-15 | 2021-08-03 | Versum Materials U.S., LLC | Formulation for deposition of silicon doped hafnium oxide as ferroelectric materials |
| US10975469B2 (en) | 2017-03-17 | 2021-04-13 | Applied Materials, Inc. | Plasma resistant coating of porous body by atomic layer deposition |
| US9911595B1 (en) | 2017-03-17 | 2018-03-06 | Lam Research Corporation | Selective growth of silicon nitride |
| JP6703496B2 (ja) | 2017-03-27 | 2020-06-03 | 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ | 基板処理装置、半導体装置の製造方法およびプログラム |
| JP6807792B2 (ja) | 2017-03-27 | 2021-01-06 | 東京エレクトロン株式会社 | プラズマ生成方法及びこれを用いたプラズマ処理方法、並びにプラズマ処理装置 |
| US10629415B2 (en) | 2017-03-28 | 2020-04-21 | Asm Ip Holding B.V. | Substrate processing apparatus and method for processing substrate |
| WO2018182572A1 (en) | 2017-03-28 | 2018-10-04 | Intel Corporation | Integrated circuit contact structures |
| US10529563B2 (en) | 2017-03-29 | 2020-01-07 | Asm Ip Holdings B.V. | Method for forming doped metal oxide films on a substrate by cyclical deposition and related semiconductor device structures |
| US10283353B2 (en) | 2017-03-29 | 2019-05-07 | Asm Ip Holding B.V. | Method of reforming insulating film deposited on substrate with recess pattern |
| US10103040B1 (en) | 2017-03-31 | 2018-10-16 | Asm Ip Holding B.V. | Apparatus and method for manufacturing a semiconductor device |
| US10460932B2 (en) | 2017-03-31 | 2019-10-29 | Asm Ip Holding B.V. | Semiconductor device with amorphous silicon filled gaps and methods for forming |
| USD876504S1 (en) | 2017-04-03 | 2020-02-25 | Asm Ip Holding B.V. | Exhaust flow control ring for semiconductor deposition apparatus |
| USD830981S1 (en) | 2017-04-07 | 2018-10-16 | Asm Ip Holding B.V. | Susceptor for semiconductor substrate processing apparatus |
| CN110731003B (zh) | 2017-04-10 | 2024-03-26 | 朗姆研究公司 | 含钼的低电阻率的膜 |
| US10017856B1 (en) | 2017-04-17 | 2018-07-10 | Applied Materials, Inc. | Flowable gapfill using solvents |
| US9984869B1 (en) | 2017-04-17 | 2018-05-29 | Asm Ip Holding B.V. | Method of plasma-assisted cyclic deposition using ramp-down flow of reactant gas |
| US10242879B2 (en) | 2017-04-20 | 2019-03-26 | Lam Research Corporation | Methods and apparatus for forming smooth and conformal cobalt film by atomic layer deposition |
| KR102457289B1 (ko) | 2017-04-25 | 2022-10-21 | 에이에스엠 아이피 홀딩 비.브이. | 박막 증착 방법 및 반도체 장치의 제조 방법 |
| CN108728825B (zh)* | 2017-04-25 | 2020-12-01 | Asm知识产权私人控股有限公司 | 沉积薄膜的方法及制造半导体装置的方法 |
| US10319582B2 (en) | 2017-04-27 | 2019-06-11 | Lam Research Corporation | Methods and apparatus for depositing silicon oxide on metal layers |
| US10157785B2 (en) | 2017-05-01 | 2018-12-18 | Taiwan Semiconductor Manufacturing Company, Ltd. | Semiconductor device and method |
| US11501965B2 (en) | 2017-05-05 | 2022-11-15 | Asm Ip Holding B.V. | Plasma enhanced deposition processes for controlled formation of metal oxide thin films |
| US10446393B2 (en) | 2017-05-08 | 2019-10-15 | Asm Ip Holding B.V. | Methods for forming silicon-containing epitaxial layers and related semiconductor device structures |
| US10892156B2 (en) | 2017-05-08 | 2021-01-12 | Asm Ip Holding B.V. | Methods for forming a silicon nitride film on a substrate and related semiconductor device structures |
| US10770286B2 (en) | 2017-05-08 | 2020-09-08 | Asm Ip Holdings B.V. | Methods for selectively forming a silicon nitride film on a substrate and related semiconductor device structures |
| US20180327892A1 (en) | 2017-05-10 | 2018-11-15 | Applied Materials, Inc. | Metal oxy-flouride films for chamber components |
| US20180331117A1 (en) | 2017-05-12 | 2018-11-15 | Sandisk Technologies Llc | Multilevel memory stack structure with tapered inter-tier joint region and methods of making thereof |
| US20180325414A1 (en) | 2017-05-12 | 2018-11-15 | Tech4Imaging Llc | Electro-magneto volume tomography system and methodology for non-invasive volume tomography |
| KR102684628B1 (ko) | 2017-05-16 | 2024-07-15 | 에이에스엠 아이피 홀딩 비.브이. | 유전체 상에 옥사이드의 선택적 peald |
| US10153195B1 (en) | 2017-05-18 | 2018-12-11 | Micron Technology, Inc. | Semiconductor constructions comprising dielectric material |
| US10763139B2 (en) | 2017-05-23 | 2020-09-01 | Tokyo Electron Limited | Vacuum transfer module and substrate processing apparatus |
| KR102417931B1 (ko) | 2017-05-30 | 2022-07-06 | 에이에스엠 아이피 홀딩 비.브이. | 기판 지지 장치 및 이를 포함하는 기판 처리 장치 |
| US10504742B2 (en) | 2017-05-31 | 2019-12-10 | Asm Ip Holding B.V. | Method of atomic layer etching using hydrogen plasma |
| US10886123B2 (en) | 2017-06-02 | 2021-01-05 | Asm Ip Holding B.V. | Methods for forming low temperature semiconductor layers and related semiconductor device structures |
| CN117524848A (zh) | 2017-06-08 | 2024-02-06 | 应用材料公司 | 用于硬掩模及其他图案化应用的高密度低温碳膜 |
| US10246777B2 (en) | 2017-06-12 | 2019-04-02 | Asm Ip Holding B.V. | Heater block having continuous concavity |
| KR102474876B1 (ko) | 2017-06-15 | 2022-12-07 | 삼성전자주식회사 | 텅스텐 전구체 및 이를 이용한 텅스텐 함유막의 형성 방법 |
| US12040200B2 (en) | 2017-06-20 | 2024-07-16 | Asm Ip Holding B.V. | Semiconductor processing apparatus and methods for calibrating a semiconductor processing apparatus |
| CN109112500B (zh) | 2017-06-22 | 2022-01-28 | 肯纳金属公司 | Cvd复合材料耐火涂层及其应用 |
| JP7256135B2 (ja) | 2017-06-23 | 2023-04-11 | メルク パテント ゲゼルシャフト ミット ベシュレンクテル ハフツング | 選択的な膜成長のための原子層堆積の方法 |
| US11306395B2 (en) | 2017-06-28 | 2022-04-19 | Asm Ip Holding B.V. | Methods for depositing a transition metal nitride film on a substrate by atomic layer deposition and related deposition apparatus |
| US10361522B2 (en) | 2017-06-29 | 2019-07-23 | Commscope Technologies Llc | Inner contact for coaxial cable |
| US10685834B2 (en) | 2017-07-05 | 2020-06-16 | Asm Ip Holdings B.V. | Methods for forming a silicon germanium tin layer and related semiconductor device structures |
| TWI794238B (zh) | 2017-07-13 | 2023-03-01 | 荷蘭商Ａｓｍ智慧財產控股公司 | 於單一加工腔室中自半導體膜移除氧化物及碳之裝置及方法 |
| KR20190009245A (ko) | 2017-07-18 | 2019-01-28 | 에이에스엠 아이피 홀딩 비.브이. | 반도체 소자 구조물 형성 방법 및 관련된 반도체 소자 구조물 |
| US10541333B2 (en) | 2017-07-19 | 2020-01-21 | Asm Ip Holding B.V. | Method for depositing a group IV semiconductor and related semiconductor device structures |
| US11374112B2 (en) | 2017-07-19 | 2022-06-28 | Asm Ip Holding B.V. | Method for depositing a group IV semiconductor and related semiconductor device structures |
| US11018002B2 (en) | 2017-07-19 | 2021-05-25 | Asm Ip Holding B.V. | Method for selectively depositing a Group IV semiconductor and related semiconductor device structures |
| TWM553518U (zh) | 2017-07-20 | 2017-12-21 | Green Wind Technology Co Ltd | 馬達絕緣結構 |
| US10312055B2 (en) | 2017-07-26 | 2019-06-04 | Asm Ip Holding B.V. | Method of depositing film by PEALD using negative bias |
| US10605530B2 (en) | 2017-07-26 | 2020-03-31 | Asm Ip Holding B.V. | Assembly of a liner and a flange for a vertical furnace as well as the liner and the vertical furnace |
| US10590535B2 (en) | 2017-07-26 | 2020-03-17 | Asm Ip Holdings B.V. | Chemical treatment, deposition and/or infiltration apparatus and method for using the same |
| USD859136S1 (en) | 2017-07-31 | 2019-09-10 | Ge Healthcare Bio-Sciences Corp. | Tubing clamp |
| JP6925196B2 (ja) | 2017-07-31 | 2021-08-25 | 東京エレクトロン株式会社 | 処理装置及び処理方法 |
| KR102481410B1 (ko) | 2017-07-31 | 2022-12-26 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치 |
| USD867867S1 (en) | 2017-07-31 | 2019-11-26 | Ge Healthcare Bio-Sciences Corp. | Tubing clamp |
| US10361366B2 (en) | 2017-08-03 | 2019-07-23 | Tokyo Electron Limited | Resistive random accress memory containing a conformal titanium aluminum carbide film and method of making |
| TWI815813B (zh) | 2017-08-04 | 2023-09-21 | 荷蘭商Ａｓｍ智慧財產控股公司 | 用於分配反應腔內氣體的噴頭總成 |
| US11358113B2 (en) | 2017-08-08 | 2022-06-14 | H Quest Vanguard, Inc. | Non-thermal micro-plasma conversion of hydrocarbons |
| US10770336B2 (en) | 2017-08-08 | 2020-09-08 | Asm Ip Holding B.V. | Substrate lift mechanism and reactor including same |
| US10692741B2 (en) | 2017-08-08 | 2020-06-23 | Asm Ip Holdings B.V. | Radiation shield |
| TWI778102B (zh) | 2017-08-09 | 2022-09-21 | 荷蘭商Ａｓｍ智慧財產控股公司 | 用於儲存基板用之卡匣的儲存設備及備有其之處理設備 |
| US10249524B2 (en) | 2017-08-09 | 2019-04-02 | Asm Ip Holding B.V. | Cassette holder assembly for a substrate cassette and holding member for use in such assembly |
| US11139191B2 (en) | 2017-08-09 | 2021-10-05 | Asm Ip Holding B.V. | Storage apparatus for storing cassettes for substrates and processing apparatus equipped therewith |
| US10763108B2 (en) | 2017-08-18 | 2020-09-01 | Lam Research Corporation | Geometrically selective deposition of a dielectric film |
| US10236177B1 (en) | 2017-08-22 | 2019-03-19 | ASM IP Holding B.V.. | Methods for depositing a doped germanium tin semiconductor and related semiconductor device structures |
| USD900036S1 (en) | 2017-08-24 | 2020-10-27 | Asm Ip Holding B.V. | Heater electrical connector and adapter |
| US11830730B2 (en) | 2017-08-29 | 2023-11-28 | Asm Ip Holding B.V. | Layer forming method and apparatus |
| US20190067014A1 (en) | 2017-08-30 | 2019-02-28 | Asm Ip Holding B.V. | Methods for filling a gap feature on a substrate surface and related semiconductor device structures |
| KR102491945B1 (ko) | 2017-08-30 | 2023-01-26 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치 |
| US20190067003A1 (en) | 2017-08-30 | 2019-02-28 | Asm Ip Holding B.V. | Methods for depositing a molybdenum metal film on a dielectric surface of a substrate and related semiconductor device structures |
| US11295980B2 (en) | 2017-08-30 | 2022-04-05 | Asm Ip Holding B.V. | Methods for depositing a molybdenum metal film over a dielectric surface of a substrate by a cyclical deposition process and related semiconductor device structures |
| US20190067095A1 (en) | 2017-08-30 | 2019-02-28 | Asm Ip Holding B.V. | Layer forming method |
| US11056344B2 (en) | 2017-08-30 | 2021-07-06 | Asm Ip Holding B.V. | Layer forming method |
| US10622236B2 (en) | 2017-08-30 | 2020-04-14 | Taiwan Semiconductor Manufacturing Co., Ltd. | Apparatus and method for handling wafer carrier doors |
| KR102401446B1 (ko) | 2017-08-31 | 2022-05-24 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치 |
| US10106892B1 (en) | 2017-08-31 | 2018-10-23 | Globalfoundries Inc. | Thermal oxide equivalent low temperature ALD oxide for dual purpose gate oxide and method for producing the same |
| US20190078200A1 (en) | 2017-09-08 | 2019-03-14 | Applied Materials, Inc. | Fluorinated rare earth oxide ald coating for chamber productivity enhancement |
| US10269559B2 (en) | 2017-09-13 | 2019-04-23 | Lam Research Corporation | Dielectric gapfill of high aspect ratio features utilizing a sacrificial etch cap layer |
| SG11202002265PA (en) | 2017-09-14 | 2020-04-29 | Versum Material Us Llc | Compositions and methods for depositing silicon-containing films |
| CN107675144A (zh) | 2017-09-15 | 2018-02-09 | 武汉华星光电技术有限公司 | 等离子体增强化学气相沉积装置 |
| US10607895B2 (en) | 2017-09-18 | 2020-03-31 | Asm Ip Holdings B.V. | Method for forming a semiconductor device structure comprising a gate fill metal |
| KR102074346B1 (ko) | 2017-09-19 | 2020-02-06 | 서울과학기술대학교 산학협력단 | 리모트 플라즈마를 이용한 원자층 증착 시스템 |
| US10530143B2 (en) | 2017-09-21 | 2020-01-07 | Accessesp Uk Limited | Stress control cones for downhole electrical power system tubing encapsulated power cables |
| KR102630301B1 (ko) | 2017-09-21 | 2024-01-29 | 에이에스엠 아이피 홀딩 비.브이. | 침투성 재료의 순차 침투 합성 방법 처리 및 이를 이용하여 형성된 구조물 및 장치 |
| US10844484B2 (en) | 2017-09-22 | 2020-11-24 | Asm Ip Holding B.V. | Apparatus for dispensing a vapor phase reactant to a reaction chamber and related methods |
| US10658205B2 (en) | 2017-09-28 | 2020-05-19 | Asm Ip Holdings B.V. | Chemical dispensing apparatus and methods for dispensing a chemical to a reaction chamber |
| US10468501B2 (en) | 2017-09-29 | 2019-11-05 | Taiwan Semiconductor Manufacturing Company, Ltd. | Gap-filling germanium through selective bottom-up growth |
| US10403504B2 (en) | 2017-10-05 | 2019-09-03 | Asm Ip Holding B.V. | Method for selectively depositing a metallic film on a substrate |
| US10319588B2 (en) | 2017-10-10 | 2019-06-11 | Asm Ip Holding B.V. | Method for depositing a metal chalcogenide on a substrate by cyclical deposition |
| KR20190042977A (ko) | 2017-10-17 | 2019-04-25 | 삼성전자주식회사 | 반도체 장치의 제조 방법 |
| US10923344B2 (en) | 2017-10-30 | 2021-02-16 | Asm Ip Holding B.V. | Methods for forming a semiconductor structure and related semiconductor structures |
| US11948810B2 (en) | 2017-11-15 | 2024-04-02 | Taiwan Semiconductor Manufacturing Company, Ltd. | Apparatus for processing substrates or wafers |
| US10468530B2 (en) | 2017-11-15 | 2019-11-05 | Taiwan Semiconductor Manufacturing Co., Ltd. | Semiconductor structure with source/drain multi-layer structure and method for forming the same |
| US10910262B2 (en) | 2017-11-16 | 2021-02-02 | Asm Ip Holding B.V. | Method of selectively depositing a capping layer structure on a semiconductor device structure |
| KR102443047B1 (ko) | 2017-11-16 | 2022-09-14 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치 방법 및 그에 의해 제조된 장치 |
| CN111356785A (zh) | 2017-11-19 | 2020-06-30 | 应用材料公司 | 用于金属氧化物在金属表面上的ald的方法 |
| TW202440983A (zh) | 2017-11-20 | 2024-10-16 | 美商蘭姆研究公司 | 形成金屬薄膜的方法及儀器 |
| US11022879B2 (en) | 2017-11-24 | 2021-06-01 | Asm Ip Holding B.V. | Method of forming an enhanced unexposed photoresist layer |
| CN111344522B (zh) | 2017-11-27 | 2022-04-12 | 阿斯莫Ip控股公司 | 包括洁净迷你环境的装置 |
| WO2019103613A1 (en) | 2017-11-27 | 2019-05-31 | Asm Ip Holding B.V. | A storage device for storing wafer cassettes for use with a batch furnace |
| JP7326275B2 (ja) | 2017-12-01 | 2023-08-15 | アプライド マテリアルズ インコーポレイテッド | エッチング選択性の高いアモルファスカーボン膜 |
| US10229985B1 (en) | 2017-12-04 | 2019-03-12 | International Business Machines Corporation | Vertical field-effect transistor with uniform bottom spacer |
| TWI761636B (zh) | 2017-12-04 | 2022-04-21 | 荷蘭商Ａｓｍ Ｉｐ控股公司 | 電漿增強型原子層沉積製程及沉積碳氧化矽薄膜的方法 |
| US10290508B1 (en) | 2017-12-05 | 2019-05-14 | Asm Ip Holding B.V. | Method for forming vertical spacers for spacer-defined patterning |
| US11037780B2 (en) | 2017-12-12 | 2021-06-15 | Asm Ip Holding B.V. | Method for manufacturing semiconductor device with helium-containing gas |
| US10760158B2 (en) | 2017-12-15 | 2020-09-01 | Lam Research Corporation | Ex situ coating of chamber components for semiconductor processing |
| US20190189447A1 (en) | 2017-12-19 | 2019-06-20 | Lam Research Corporation | Method for forming square spacers |
| US10903054B2 (en) | 2017-12-19 | 2021-01-26 | Applied Materials, Inc. | Multi-zone gas distribution systems and methods |
| JP7149068B2 (ja) | 2017-12-21 | 2022-10-06 | 株式会社日立ハイテク | プラズマ処理装置およびプラズマ処理方法 |
| US10283565B1 (en) | 2017-12-21 | 2019-05-07 | International Business Machines Corporation | Resistive memory with a plurality of resistive random access memory cells each comprising a transistor and a resistive element |
| US10415899B2 (en) | 2017-12-28 | 2019-09-17 | Asm Ip Holding B.V. | Cooling system, substrate processing system and flow rate adjusting method for cooling medium |
| US10204788B1 (en) | 2018-01-01 | 2019-02-12 | United Microelectronics Corp. | Method of forming high dielectric constant dielectric layer by atomic layer deposition |
| US11149350B2 (en) | 2018-01-10 | 2021-10-19 | Asm Ip Holding B.V. | Shower plate structure for supplying carrier and dry gas |
| US10872771B2 (en) | 2018-01-16 | 2020-12-22 | Asm Ip Holding B. V. | Method for depositing a material film on a substrate within a reaction chamber by a cyclical deposition process and related device structures |
| TWI799494B (zh) | 2018-01-19 | 2023-04-21 | 荷蘭商Ａｓｍ 智慧財產控股公司 | 沈積方法 |
| KR102695659B1 (ko) | 2018-01-19 | 2024-08-14 | 에이에스엠 아이피 홀딩 비.브이. | 플라즈마 보조 증착에 의해 갭 충진 층을 증착하는 방법 |
| USD903477S1 (en) | 2018-01-24 | 2020-12-01 | Asm Ip Holdings B.V. | Metal clamp |
| US10332747B1 (en) | 2018-01-24 | 2019-06-25 | Globalfoundries Inc. | Selective titanium nitride deposition using oxides of lanthanum masks |
| CN108389798B (zh) | 2018-01-24 | 2021-02-02 | 信利（惠州）智能显示有限公司 | 刻蚀方法、低温多晶硅薄膜晶体管及amoled面板 |
| US11018047B2 (en) | 2018-01-25 | 2021-05-25 | Asm Ip Holding B.V. | Hybrid lift pin |
| US20190237325A1 (en) | 2018-01-26 | 2019-08-01 | Applied Materials, Inc. | Carbon film gapfill for patterning application |
| WO2019147462A1 (en) | 2018-01-26 | 2019-08-01 | Applied Materials, Inc. | Treatment methods for silicon nitride thin films |
| US10332963B1 (en) | 2018-01-29 | 2019-06-25 | Globalfoundries Inc. | Uniformity tuning of variable-height features formed in trenches |
| US11098069B2 (en) | 2018-01-30 | 2021-08-24 | Versum Materials Us, Llc | Organoamino-functionalized cyclic oligosiloxanes for deposition of silicon-containing films |
| US10535516B2 (en) | 2018-02-01 | 2020-01-14 | Asm Ip Holdings B.V. | Method for depositing a semiconductor structure on a surface of a substrate and related semiconductor structures |
| USD880437S1 (en) | 2018-02-01 | 2020-04-07 | Asm Ip Holding B.V. | Gas supply plate for semiconductor manufacturing apparatus |
| US11081345B2 (en) | 2018-02-06 | 2021-08-03 | Asm Ip Holding B.V. | Method of post-deposition treatment for silicon oxide film |
| US20190249303A1 (en) | 2018-02-09 | 2019-08-15 | Asm Ip Holding B.V. | Chemical precursors and methods for depositing a silicon oxide film on a substrate utilizing chemical precursors |
| US10896820B2 (en) | 2018-02-14 | 2021-01-19 | Asm Ip Holding B.V. | Method for depositing a ruthenium-containing film on a substrate by a cyclical deposition process |
| WO2019158960A1 (en) | 2018-02-14 | 2019-08-22 | Asm Ip Holding B.V. | A method for depositing a ruthenium-containing film on a substrate by a cyclical deposition process |
| US10731249B2 (en) | 2018-02-15 | 2020-08-04 | Asm Ip Holding B.V. | Method of forming a transition metal containing film on a substrate by a cyclical deposition process, a method for supplying a transition metal halide compound to a reaction chamber, and related vapor deposition apparatus |
| US10658181B2 (en) | 2018-02-20 | 2020-05-19 | Asm Ip Holding B.V. | Method of spacer-defined direct patterning in semiconductor fabrication |
| KR102636427B1 (ko) | 2018-02-20 | 2024-02-13 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 방법 및 장치 |
| US10975470B2 (en) | 2018-02-23 | 2021-04-13 | Asm Ip Holding B.V. | Apparatus for detecting or monitoring for a chemical precursor in a high temperature environment |
| US11473195B2 (en) | 2018-03-01 | 2022-10-18 | Asm Ip Holding B.V. | Semiconductor processing apparatus and a method for processing a substrate |
| US11087961B2 (en) | 2018-03-02 | 2021-08-10 | Lam Research Corporation | Quartz component with protective coating |
| US11629406B2 (en) | 2018-03-09 | 2023-04-18 | Asm Ip Holding B.V. | Semiconductor processing apparatus comprising one or more pyrometers for measuring a temperature of a substrate during transfer of the substrate |
| US11114283B2 (en) | 2018-03-16 | 2021-09-07 | Asm Ip Holding B.V. | Reactor, system including the reactor, and methods of manufacturing and using same |
| KR102646467B1 (ko) | 2018-03-27 | 2024-03-11 | 에이에스엠 아이피 홀딩 비.브이. | 기판 상에 전극을 형성하는 방법 및 전극을 포함하는 반도체 소자 구조 |
| US10510536B2 (en) | 2018-03-29 | 2019-12-17 | Asm Ip Holding B.V. | Method of depositing a co-doped polysilicon film on a surface of a substrate within a reaction chamber |
| US11230766B2 (en) | 2018-03-29 | 2022-01-25 | Asm Ip Holding B.V. | Substrate processing apparatus and method |
| US11088002B2 (en) | 2018-03-29 | 2021-08-10 | Asm Ip Holding B.V. | Substrate rack and a substrate processing system and method |
| KR102501472B1 (ko) | 2018-03-30 | 2023-02-20 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 방법 |
| KR102600229B1 (ko) | 2018-04-09 | 2023-11-10 | 에이에스엠 아이피 홀딩 비.브이. | 기판 지지 장치, 이를 포함하는 기판 처리 장치 및 기판 처리 방법 |
| JP6519897B2 (ja) | 2018-04-10 | 2019-05-29 | シンフォニアテクノロジー株式会社 | パージノズルユニット、ロードポート |
| US10756186B2 (en) | 2018-04-12 | 2020-08-25 | Sandisk Technologies Llc | Three-dimensional memory device including germanium-containing vertical channels and method of making the same |
| US11462387B2 (en) | 2018-04-17 | 2022-10-04 | Asm Ip Holding B.V. | Substrate processing apparatus and substrate processing method |
| US10782613B2 (en) | 2018-04-19 | 2020-09-22 | International Business Machines Corporation | Polymerizable self-assembled monolayers for use in atomic layer deposition |
| US20190330740A1 (en) | 2018-04-30 | 2019-10-31 | Asm Ip Holding B.V. | Substrate processing apparatus and method |
| US10580645B2 (en) | 2018-04-30 | 2020-03-03 | Asm Ip Holding B.V. | Plasma enhanced atomic layer deposition (PEALD) of SiN using silicon-hydrohalide precursors |
| US11639547B2 (en) | 2018-05-03 | 2023-05-02 | Applied Materials, Inc. | Halogen resistant coatings and methods of making and using thereof |
| KR102806630B1 (ko) | 2018-05-03 | 2025-05-12 | 램 리써치 코포레이션 | 3d nand 구조체들에 텅스텐 및 다른 금속들을 증착하는 방법 |
| TWI811348B (zh) | 2018-05-08 | 2023-08-11 | 荷蘭商Ａｓｍ 智慧財產控股公司 | 藉由循環沉積製程於基板上沉積氧化物膜之方法及相關裝置結構 |
| US12025484B2 (en) | 2018-05-08 | 2024-07-02 | Asm Ip Holding B.V. | Thin film forming method |
| US12272527B2 (en) | 2018-05-09 | 2025-04-08 | Asm Ip Holding B.V. | Apparatus for use with hydrogen radicals and method of using same |
| KR20190129718A (ko) | 2018-05-11 | 2019-11-20 | 에이에스엠 아이피 홀딩 비.브이. | 기판 상에 피도핑 금속 탄화물 막을 형성하는 방법 및 관련 반도체 소자 구조 |
| EP3791231A4 (en) | 2018-05-11 | 2022-01-26 | Lam Research Corporation | PROCESS FOR THE MANUFACTURE OF EUV SAMPLE HARD MASKS |
| CN110473819B (zh) | 2018-05-11 | 2020-12-08 | 北京北方华创微电子装备有限公司 | 一种开门装置、传输腔室和半导体处理设备 |
| AT520629B1 (de) | 2018-05-22 | 2019-06-15 | Sico Tech Gmbh | Injektor aus Silizium für die Halbleiterindustrie |
| US10665505B2 (en) | 2018-05-22 | 2020-05-26 | International Business Machines Corporation | Self-aligned gate contact isolation |
| CN109075167B (zh) | 2018-05-24 | 2020-08-25 | 长江存储科技有限责任公司 | 用于修复衬底晶格以及选择性外延处理的方法 |
| US20190362989A1 (en) | 2018-05-25 | 2019-11-28 | Applied Materials, Inc. | Substrate manufacturing apparatus and methods with factory interface chamber heating |
| KR102596988B1 (ko) | 2018-05-28 | 2023-10-31 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 방법 및 그에 의해 제조된 장치 |
| US20190368040A1 (en) | 2018-06-01 | 2019-12-05 | Asm Ip Holding B.V. | Infiltration apparatus and methods of infiltrating an infiltrateable material |
| US11718913B2 (en) | 2018-06-04 | 2023-08-08 | Asm Ip Holding B.V. | Gas distribution system and reactor system including same |
| TWI840362B (zh) | 2018-06-04 | 2024-05-01 | 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 | 水氣降低的晶圓處置腔室 |
| US11286562B2 (en) | 2018-06-08 | 2022-03-29 | Asm Ip Holding B.V. | Gas-phase chemical reactor and method of using same |
| TW202403083A (zh) | 2018-06-19 | 2024-01-16 | 美商應用材料股份有限公司 | 間隙填充物沉積方法及類金剛石之碳的間隙填充物材料 |
| US10741641B2 (en) | 2018-06-20 | 2020-08-11 | International Business Machines Corporation | Dielectric isolation and SiGe channel formation for integration in CMOS nanosheet channel devices |
| KR102568797B1 (ko) | 2018-06-21 | 2023-08-21 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 시스템 |
| US10797133B2 (en) | 2018-06-21 | 2020-10-06 | Asm Ip Holding B.V. | Method for depositing a phosphorus doped silicon arsenide film and related semiconductor device structures |
| US10483154B1 (en) | 2018-06-22 | 2019-11-19 | Globalfoundries Inc. | Front-end-of-line device structure and method of forming such a front-end-of-line device structure |
| TWI873894B (zh) | 2018-06-27 | 2025-02-21 | 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 | 用於形成含金屬材料及包含含金屬材料的膜及結構之循環沉積方法 |
| KR102854019B1 (ko) | 2018-06-27 | 2025-09-02 | 에이에스엠 아이피 홀딩 비.브이. | 금속 함유 재료를 형성하기 위한 주기적 증착 방법 및 금속 함유 재료를 포함하는 필름 및 구조체 |
| US10612136B2 (en) | 2018-06-29 | 2020-04-07 | ASM IP Holding, B.V. | Temperature-controlled flange and reactor system including same |
| KR102686758B1 (ko) | 2018-06-29 | 2024-07-18 | 에이에스엠 아이피 홀딩 비.브이. | 박막 증착 방법 및 반도체 장치의 제조 방법 |
| WO2020003047A1 (ja) | 2018-06-29 | 2020-01-02 | 株式会社半導体エネルギー研究所 | 半導体装置、および半導体装置の作製方法 |
| US10388513B1 (en) | 2018-07-03 | 2019-08-20 | Asm Ip Holding B.V. | Method for depositing silicon-free carbon-containing film as gap-fill layer by pulse plasma-assisted deposition |
| US10755922B2 (en) | 2018-07-03 | 2020-08-25 | Asm Ip Holding B.V. | Method for depositing silicon-free carbon-containing film as gap-fill layer by pulse plasma-assisted deposition |
| US10767789B2 (en) | 2018-07-16 | 2020-09-08 | Asm Ip Holding B.V. | Diaphragm valves, valve components, and methods for forming valve components |
| US20210140043A1 (en) | 2018-07-26 | 2021-05-13 | Lam Research Corporation | Deposition of pure metal films |
| KR102501287B1 (ko) | 2018-07-30 | 2023-02-21 | 어플라이드 머티어리얼스, 인코포레이티드 | 낮은 온도들에서의 선택적 규소 게르마늄 에피택시 방법 |
| CN109000352A (zh) | 2018-08-03 | 2018-12-14 | 珠海格力电器股份有限公司 | 风道模块、设有其的风道结构及空调 |
| US11053591B2 (en) | 2018-08-06 | 2021-07-06 | Asm Ip Holding B.V. | Multi-port gas injection system and reactor system including same |
| US10883175B2 (en) | 2018-08-09 | 2021-01-05 | Asm Ip Holding B.V. | Vertical furnace for processing substrates and a liner for use therein |
| KR20200019308A (ko) | 2018-08-13 | 2020-02-24 | 삼성디스플레이 주식회사 | 유기 발광 표시 장치 |
| CN108910843A (zh) | 2018-08-13 | 2018-11-30 | 中国工程物理研究院化工材料研究所 | 一种推进剂燃料的制备方法 |
| US12230475B2 (en) | 2018-08-14 | 2025-02-18 | Tokyo Electron Limited | Systems and methods of control for plasma processing |
| US10950426B2 (en)* | 2018-08-14 | 2021-03-16 | Taiwan Semiconductor Manufacturing Co., Ltd. | Dielectric layer, interconnection structure using the same, and manufacturing method thereof |
| US10829852B2 (en) | 2018-08-16 | 2020-11-10 | Asm Ip Holding B.V. | Gas distribution device for a wafer processing apparatus |
| US10510871B1 (en) | 2018-08-16 | 2019-12-17 | Taiwan Semiconductor Manufacturing Company, Ltd. | Semiconductor device and method |
| US11430674B2 (en) | 2018-08-22 | 2022-08-30 | Asm Ip Holding B.V. | Sensor array, apparatus for dispensing a vapor phase reactant to a reaction chamber and related methods |
| TWI827645B (zh) | 2018-08-23 | 2024-01-01 | 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 | 基板處理設備及方法 |
| JP6896682B2 (ja) | 2018-09-04 | 2021-06-30 | 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ | 基板処理装置および半導体装置の製造方法 |
| US11024523B2 (en) | 2018-09-11 | 2021-06-01 | Asm Ip Holding B.V. | Substrate processing apparatus and method |
| KR102707956B1 (ko) | 2018-09-11 | 2024-09-19 | 에이에스엠 아이피 홀딩 비.브이. | 박막 증착 방법 |
| US11282938B2 (en) | 2018-09-28 | 2022-03-22 | Taiwan Semiconductor Manufacturing Company, Ltd. | Capping layers in metal gates of transistors |
| US11501999B2 (en) | 2018-09-28 | 2022-11-15 | Taiwan Semiconductor Manufacturing Co., Ltd. | Cobalt fill for gate structures |
| CN110970344B (zh) | 2018-10-01 | 2024-10-25 | Asmip控股有限公司 | 衬底保持设备、包含所述设备的系统及其使用方法 |
| US20200109484A1 (en) | 2018-10-03 | 2020-04-09 | Asm Ip Holding B.V. | Susceptor and susceptor coating method |
| US11232963B2 (en) | 2018-10-03 | 2022-01-25 | Asm Ip Holding B.V. | Substrate processing apparatus and method |
| US20200111669A1 (en) | 2018-10-04 | 2020-04-09 | Asm Ip Holding B.V. | Method for depositing oxide film by peald using nitrogen |
| KR102592699B1 (ko) | 2018-10-08 | 2023-10-23 | 에이에스엠 아이피 홀딩 비.브이. | 기판 지지 유닛 및 이를 포함하는 박막 증착 장치와 기판 처리 장치 |
| US10847365B2 (en) | 2018-10-11 | 2020-11-24 | Asm Ip Holding B.V. | Method of forming conformal silicon carbide film by cyclic CVD |
| US10825828B2 (en) | 2018-10-11 | 2020-11-03 | Micron Technology, Inc. | Semiconductor devices and systems with channel openings or pillars extending through a tier stack, and methods of formation |
| US10811256B2 (en) | 2018-10-16 | 2020-10-20 | Asm Ip Holding B.V. | Method for etching a carbon-containing feature |
| KR102546322B1 (ko) | 2018-10-19 | 2023-06-21 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치 및 기판 처리 방법 |
| KR102605121B1 (ko) | 2018-10-19 | 2023-11-23 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치 및 기판 처리 방법 |
| USD864134S1 (en) | 2018-10-24 | 2019-10-22 | Asm Ip Holding B.V. | Susceptor |
| US12378665B2 (en) | 2018-10-26 | 2025-08-05 | Asm Ip Holding B.V. | High temperature coatings for a preclean and etch apparatus and related methods |
| US11081584B2 (en) | 2018-10-30 | 2021-08-03 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method of manufacturing semiconductor devices using a capping layer in forming gate electrode and semiconductor devices |
| US11087997B2 (en) | 2018-10-31 | 2021-08-10 | Asm Ip Holding B.V. | Substrate processing apparatus for processing substrates |
| KR102748291B1 (ko) | 2018-11-02 | 2024-12-31 | 에이에스엠 아이피 홀딩 비.브이. | 기판 지지 유닛 및 이를 포함하는 기판 처리 장치 |
| US11572620B2 (en) | 2018-11-06 | 2023-02-07 | Asm Ip Holding B.V. | Methods for selectively depositing an amorphous silicon film on a substrate |
| US11031242B2 (en) | 2018-11-07 | 2021-06-08 | Asm Ip Holding B.V. | Methods for depositing a boron doped silicon germanium film |
| TWI838420B (zh) | 2018-11-13 | 2024-04-11 | 日商東京威力科創股份有限公司 | 在半導體元件圖案化中形成及使用應力調整矽氧化物膜的方法 |
| US10847366B2 (en) | 2018-11-16 | 2020-11-24 | Asm Ip Holding B.V. | Methods for depositing a transition metal chalcogenide film on a substrate by a cyclical deposition process |
| US10818758B2 (en) | 2018-11-16 | 2020-10-27 | Asm Ip Holding B.V. | Methods for forming a metal silicate film on a substrate in a reaction chamber and related semiconductor device structures |
| US12040199B2 (en) | 2018-11-28 | 2024-07-16 | Asm Ip Holding B.V. | Substrate processing apparatus for processing substrates |
| US11217444B2 (en) | 2018-11-30 | 2022-01-04 | Asm Ip Holding B.V. | Method for forming an ultraviolet radiation responsive metal oxide-containing film |
| KR102636428B1 (ko) | 2018-12-04 | 2024-02-13 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치를 세정하는 방법 |
| US20200181770A1 (en) | 2018-12-05 | 2020-06-11 | Asm Ip Holding B.V. | Method of forming a structure including silicon nitride on titanium nitride and structure formed using the method |
| JP7705347B2 (ja) | 2018-12-05 | 2025-07-09 | ラム リサーチ コーポレーション | ボイドフリーの低応力充填 |
| US10777445B2 (en) | 2018-12-06 | 2020-09-15 | Asm Ip Holding B.V. | Substrate processing apparatus and substrate transfer method |
| WO2020117371A1 (en) | 2018-12-07 | 2020-06-11 | Applied Materials, Inc. | Ground electrode formed in an electrostatic chuck for a plasma processing chamber |
| US11158513B2 (en) | 2018-12-13 | 2021-10-26 | Asm Ip Holding B.V. | Methods for forming a rhenium-containing film on a substrate by a cyclical deposition process and related semiconductor device structures |
| TWI874340B (zh) | 2018-12-14 | 2025-03-01 | 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 | 形成裝置結構之方法、其所形成之結構及施行其之系統 |
| US20200203157A1 (en) | 2018-12-20 | 2020-06-25 | Nanya Technology Corporation | Method for preparing multiplayer structure |
| USD914620S1 (en) | 2019-01-17 | 2021-03-30 | Asm Ip Holding B.V. | Vented susceptor |
| TWI866480B (zh) | 2019-01-17 | 2024-12-11 | 荷蘭商Ａｓｍ Ｉｐ 私人控股有限公司 | 藉由循環沈積製程於基板上形成含過渡金屬膜之方法 |
| KR102727227B1 (ko) | 2019-01-22 | 2024-11-07 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치 |
| US10704143B1 (en) | 2019-01-25 | 2020-07-07 | Asm Ip Holding B.V. | Oxide film forming method |
| CN111524788B (zh) | 2019-02-01 | 2023-11-24 | Asm Ip私人控股有限公司 | 氧化硅的拓扑选择性膜形成的方法 |
| TWI845607B (zh) | 2019-02-20 | 2024-06-21 | 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 | 用來填充形成於基材表面內之凹部的循環沉積方法及設備 |
| TWI838458B (zh) | 2019-02-20 | 2024-04-11 | 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 | 用於3d nand應用中之插塞填充沉積之設備及方法 |
| TWI873122B (zh) | 2019-02-20 | 2025-02-21 | 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 | 填充一基板之一表面內所形成的一凹槽的方法、根據其所形成之半導體結構、及半導體處理設備 |
| KR102626263B1 (ko) | 2019-02-20 | 2024-01-16 | 에이에스엠 아이피 홀딩 비.브이. | 처리 단계를 포함하는 주기적 증착 방법 및 이를 위한 장치 |
| TWI842826B (zh) | 2019-02-22 | 2024-05-21 | 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 | 基材處理設備及處理基材之方法 |
| USD881338S1 (en) | 2019-02-26 | 2020-04-14 | Ziyong Chen | Filter |
| KR102782593B1 (ko) | 2019-03-08 | 2025-03-14 | 에이에스엠 아이피 홀딩 비.브이. | SiOC 층을 포함한 구조체 및 이의 형성 방법 |
| US11742198B2 (en) | 2019-03-08 | 2023-08-29 | Asm Ip Holding B.V. | Structure including SiOCN layer and method of forming same |
| KR102858005B1 (ko) | 2019-03-08 | 2025-09-09 | 에이에스엠 아이피 홀딩 비.브이. | 실리콘 질화물 층을 선택적으로 증착하는 방법, 및 선택적으로 증착된 실리콘 질화물 층을 포함하는 구조체 |
| JP2020167398A (ja) | 2019-03-28 | 2020-10-08 | エーエスエム・アイピー・ホールディング・ベー・フェー | ドアオープナーおよびドアオープナーが提供される基材処理装置 |
| JP7502039B2 (ja) | 2019-03-28 | 2024-06-18 | エーエスエム・アイピー・ホールディング・ベー・フェー | 基板処理装置 |
| KR102809999B1 (ko) | 2019-04-01 | 2025-05-19 | 에이에스엠 아이피 홀딩 비.브이. | 반도체 소자를 제조하는 방법 |
| US20200318237A1 (en) | 2019-04-05 | 2020-10-08 | Asm Ip Holding B.V. | Methods for forming a boron nitride film by a plasma enhanced atomic layer deposition process |
| KR20200123380A (ko) | 2019-04-19 | 2020-10-29 | 에이에스엠 아이피 홀딩 비.브이. | 층 형성 방법 및 장치 |
| KR20200125453A (ko) | 2019-04-24 | 2020-11-04 | 에이에스엠 아이피 홀딩 비.브이. | 기상 반응기 시스템 및 이를 사용하는 방법 |
| KR20200130121A (ko) | 2019-05-07 | 2020-11-18 | 에이에스엠 아이피 홀딩 비.브이. | 딥 튜브가 있는 화학물질 공급원 용기 |
| US11289326B2 (en) | 2019-05-07 | 2022-03-29 | Asm Ip Holding B.V. | Method for reforming amorphous carbon polymer film |
| KR20200130652A (ko) | 2019-05-10 | 2020-11-19 | 에이에스엠 아이피 홀딩 비.브이. | 표면 상에 재료를 증착하는 방법 및 본 방법에 따라 형성된 구조 |
| JP7598201B2 (ja) | 2019-05-16 | 2024-12-11 | エーエスエム・アイピー・ホールディング・ベー・フェー | ウェハボートハンドリング装置、縦型バッチ炉および方法 |
| JP7612342B2 (ja) | 2019-05-16 | 2025-01-14 | エーエスエム・アイピー・ホールディング・ベー・フェー | ウェハボートハンドリング装置、縦型バッチ炉および方法 |
| USD922229S1 (en) | 2019-06-05 | 2021-06-15 | Asm Ip Holding B.V. | Device for controlling a temperature of a gas supply unit |
| KR20200141002A (ko) | 2019-06-06 | 2020-12-17 | 에이에스엠 아이피 홀딩 비.브이. | 배기 가스 분석을 포함한 기상 반응기 시스템을 사용하는 방법 |
| KR20200141931A (ko) | 2019-06-10 | 2020-12-21 | 에이에스엠 아이피 홀딩 비.브이. | 석영 에피택셜 챔버를 세정하는 방법 |
| KR20200143254A (ko) | 2019-06-11 | 2020-12-23 | 에이에스엠 아이피 홀딩 비.브이. | 개질 가스를 사용하여 전자 구조를 형성하는 방법, 상기 방법을 수행하기 위한 시스템, 및 상기 방법을 사용하여 형성되는 구조 |
| US20200395199A1 (en) | 2019-06-14 | 2020-12-17 | Asm Ip Holding B.V. | Substrate treatment apparatus and method of cleaning inside of chamber |
| KR20210005515A (ko) | 2019-07-03 | 2021-01-14 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치용 온도 제어 조립체 및 이를 사용하는 방법 |
| JP7499079B2 (ja) | 2019-07-09 | 2024-06-13 | エーエスエム・アイピー・ホールディング・ベー・フェー | 同軸導波管を用いたプラズマ装置、基板処理方法 |
| KR102794839B1 (ko) | 2019-07-09 | 2025-04-14 | 에이에스엠 아이피 홀딩 비.브이. | 포토레지스트 하부층을 포함한 구조체 및 이의 형성 방법 |
| CN112216646A (zh) | 2019-07-10 | 2021-01-12 | Asm Ip私人控股有限公司 | 基板支撑组件及包括其的基板处理装置 |
| KR20210010307A (ko) | 2019-07-16 | 2021-01-27 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치 |
| KR102860110B1 (ko) | 2019-07-17 | 2025-09-16 | 에이에스엠 아이피 홀딩 비.브이. | 실리콘 게르마늄 구조를 형성하는 방법 |
| KR20210010816A (ko) | 2019-07-17 | 2021-01-28 | 에이에스엠 아이피 홀딩 비.브이. | 라디칼 보조 점화 플라즈마 시스템 및 방법 |
| US11643724B2 (en) | 2019-07-18 | 2023-05-09 | Asm Ip Holding B.V. | Method of forming structures using a neutral beam |
| KR20210010817A (ko) | 2019-07-19 | 2021-01-28 | 에이에스엠 아이피 홀딩 비.브이. | 토폴로지-제어된 비정질 탄소 중합체 막을 형성하는 방법 |
| TWI839544B (zh) | 2019-07-19 | 2024-04-21 | 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 | 形成形貌受控的非晶碳聚合物膜之方法 |
| TWI851767B (zh) | 2019-07-29 | 2024-08-11 | 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 | 用於利用n型摻雜物及/或替代摻雜物選擇性沉積以達成高摻雜物併入之方法 |
| KR20210014577A (ko) | 2019-07-29 | 2021-02-09 | 에이에스엠 아이피 홀딩 비.브이. | 불소 제거를 이용해서 구조물을 형성하는 방법 |
| US12169361B2 (en) | 2019-07-30 | 2024-12-17 | Asm Ip Holding B.V. | Substrate processing apparatus and method |
| CN112309899A (zh) | 2019-07-30 | 2021-02-02 | Asm Ip私人控股有限公司 | 基板处理设备 |
| CN112309900A (zh) | 2019-07-30 | 2021-02-02 | Asm Ip私人控股有限公司 | 基板处理设备 |
| US20210035842A1 (en) | 2019-07-31 | 2021-02-04 | Asm Ip Holding B.V. | Cassette lid opening device |
| US11915960B2 (en) | 2019-07-31 | 2024-02-27 | Asm Ip Holding B.V. | Vertical batch furnace assembly |
| US11587815B2 (en) | 2019-07-31 | 2023-02-21 | Asm Ip Holding B.V. | Vertical batch furnace assembly |
| US11587814B2 (en) | 2019-07-31 | 2023-02-21 | Asm Ip Holding B.V. | Vertical batch furnace assembly |
| US11227782B2 (en) | 2019-07-31 | 2022-01-18 | Asm Ip Holding B.V. | Vertical batch furnace assembly |
| CN112323048B (zh) | 2019-08-05 | 2024-02-09 | Asm Ip私人控股有限公司 | 用于化学源容器的液位传感器 |
| CN112342526A (zh) | 2019-08-09 | 2021-02-09 | Asm Ip私人控股有限公司 | 包括冷却装置的加热器组件及其使用方法 |
| KR102832564B1 (ko) | 2019-08-09 | 2025-07-09 | 에이에스엠 아이피 홀딩 비.브이. | 온도 제어된 화학물질 전달 시스템 및 이를 포함하는 반응기 시스템 |
| KR20210021266A (ko) | 2019-08-14 | 2021-02-25 | 에이에스엠 아이피 홀딩 비.브이. | 웨이퍼를 처리하는 장치 및 방법 |
| JP2021031769A (ja) | 2019-08-21 | 2021-03-01 | エーエスエム アイピー ホールディング ビー．ブイ． | 成膜原料混合ガス生成装置及び成膜装置 |
| KR20210024423A (ko) | 2019-08-22 | 2021-03-05 | 에이에스엠 아이피 홀딩 비.브이. | 홀을 구비한 구조체를 형성하기 위한 방법 |
| US11133416B2 (en) | 2019-08-23 | 2021-09-28 | Taiwan Semiconductor Manufacturing Company, Ltd. | Methods of forming semiconductor devices having plural epitaxial layers |
| US11286558B2 (en) | 2019-08-23 | 2022-03-29 | Asm Ip Holding B.V. | Methods for depositing a molybdenum nitride film on a surface of a substrate by a cyclical deposition process and related semiconductor device structures including a molybdenum nitride film |
| KR20210024420A (ko) | 2019-08-23 | 2021-03-05 | 에이에스엠 아이피 홀딩 비.브이. | 비스(디에틸아미노)실란을 사용하여 peald에 의해 개선된 품질을 갖는 실리콘 산화물 막을 증착하기 위한 방법 |
| KR20210028093A (ko) | 2019-08-29 | 2021-03-11 | 에이에스엠 아이피 홀딩 비.브이. | 유전체 층을 포함하는 구조체 및 이를 형성하는 방법 |
| CN112442674A (zh) | 2019-09-03 | 2021-03-05 | Asm Ip私人控股有限公司 | 用于沉积硫族化物膜的方法和设备以及包括膜的结构 |
| KR102806450B1 (ko) | 2019-09-04 | 2025-05-12 | 에이에스엠 아이피 홀딩 비.브이. | 희생 캡핑 층을 이용한 선택적 증착 방법 |
| KR102733104B1 (ko) | 2019-09-05 | 2024-11-22 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치 |
| US20210071296A1 (en) | 2019-09-06 | 2021-03-11 | Asm Ip Holding B.V. | Exhaust component cleaning method and substrate processing apparatus including exhaust component |
| US20210082692A1 (en) | 2019-09-17 | 2021-03-18 | Asm Ip Holding B.V. | Method of forming a carbon-containing layer and structure including the layer |
| US11562901B2 (en) | 2019-09-25 | 2023-01-24 | Asm Ip Holding B.V. | Substrate processing method |
| CN112593212B (zh) | 2019-10-02 | 2023-12-22 | Asm Ip私人控股有限公司 | 通过循环等离子体增强沉积工艺形成拓扑选择性氧化硅膜的方法 |
| CN114467162A (zh) | 2019-10-07 | 2022-05-10 | 应用材料公司 | 用于基板支撑件的集成电极和接地平面 |
| TWI846953B (zh) | 2019-10-08 | 2024-07-01 | 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 | 基板處理裝置 |
| WO2021072042A1 (en) | 2019-10-08 | 2021-04-15 | Lam Research Corporation | Positive tone development of cvd euv resist films |
| TW202128273A (zh) | 2019-10-08 | 2021-08-01 | 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 | 氣體注入系統、及將材料沉積於反應室內之基板表面上的方法 |
| KR20210042810A (ko) | 2019-10-08 | 2021-04-20 | 에이에스엠 아이피 홀딩 비.브이. | 활성 종을 이용하기 위한 가스 분배 어셈블리를 포함한 반응기 시스템 및 이를 사용하는 방법 |
| TWI846966B (zh) | 2019-10-10 | 2024-07-01 | 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 | 形成光阻底層之方法及包括光阻底層之結構 |
| US12009241B2 (en) | 2019-10-14 | 2024-06-11 | Asm Ip Holding B.V. | Vertical batch furnace assembly with detector to detect cassette |
| TWI834919B (zh) | 2019-10-16 | 2024-03-11 | 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 | 氧化矽之拓撲選擇性膜形成之方法 |
| US11637014B2 (en) | 2019-10-17 | 2023-04-25 | Asm Ip Holding B.V. | Methods for selective deposition of doped semiconductor material |
| KR102845724B1 (ko) | 2019-10-21 | 2025-08-13 | 에이에스엠 아이피 홀딩 비.브이. | 막을 선택적으로 에칭하기 위한 장치 및 방법 |
| KR20210050453A (ko) | 2019-10-25 | 2021-05-07 | 에이에스엠 아이피 홀딩 비.브이. | 기판 표면 상의 갭 피처를 충진하는 방법 및 이와 관련된 반도체 소자 구조 |
| US11646205B2 (en) | 2019-10-29 | 2023-05-09 | Asm Ip Holding B.V. | Methods of selectively forming n-type doped material on a surface, systems for selectively forming n-type doped material, and structures formed using same |
| KR20210054983A (ko) | 2019-11-05 | 2021-05-14 | 에이에스엠 아이피 홀딩 비.브이. | 도핑된 반도체 층을 갖는 구조체 및 이를 형성하기 위한 방법 및 시스템 |
| KR20210057664A (ko) | 2019-11-11 | 2021-05-21 | 에이에스엠 아이피 홀딩 비.브이. | 실리콘 옥사이드를 포함한 구조물을 형성하는 방법 |
| US11501968B2 (en) | 2019-11-15 | 2022-11-15 | Asm Ip Holding B.V. | Method for providing a semiconductor device with silicon filled gaps |
| KR102861314B1 (ko) | 2019-11-20 | 2025-09-17 | 에이에스엠 아이피 홀딩 비.브이. | 기판의 표면 상에 탄소 함유 물질을 증착하는 방법, 상기 방법을 사용하여 형성된 구조물, 및 상기 구조물을 형성하기 위한 시스템 |
| CN112951697B (zh) | 2019-11-26 | 2025-07-29 | Asmip私人控股有限公司 | 基板处理设备 |
| US11450529B2 (en) | 2019-11-26 | 2022-09-20 | Asm Ip Holding B.V. | Methods for selectively forming a target film on a substrate comprising a first dielectric surface and a second metallic surface |
| CN120432376A (zh) | 2019-11-29 | 2025-08-05 | Asm Ip私人控股有限公司 | 基板处理设备 |
| CN112885692B (zh) | 2019-11-29 | 2025-08-15 | Asmip私人控股有限公司 | 基板处理设备 |
| JP7527928B2 (ja) | 2019-12-02 | 2024-08-05 | エーエスエム・アイピー・ホールディング・ベー・フェー | 基板処理装置、基板処理方法 |
| CN112992637B (zh) | 2019-12-02 | 2025-06-10 | Asmip私人控股有限公司 | 衬底支撑板、包括它的衬底处理设备以及衬底处理方法 |
| KR20210070898A (ko) | 2019-12-04 | 2021-06-15 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치 |
| JP2021091968A (ja) | 2019-12-06 | 2021-06-17 | エーエスエム・アイピー・ホールディング・ベー・フェー | 基板処理装置、べベルマスク、基板処理方法 |
| CN112981372B (zh) | 2019-12-12 | 2024-02-13 | Asm Ip私人控股有限公司 | 衬底支撑板、包括它的衬底处理设备以及衬底处理方法 |
| KR20210078405A (ko) | 2019-12-17 | 2021-06-28 | 에이에스엠 아이피 홀딩 비.브이. | 바나듐 나이트라이드 층을 형성하는 방법 및 바나듐 나이트라이드 층을 포함하는 구조 |
| KR20210080214A (ko) | 2019-12-19 | 2021-06-30 | 에이에스엠 아이피 홀딩 비.브이. | 기판 상의 갭 피처를 충진하는 방법 및 이와 관련된 반도체 소자 구조 |
| TWI888453B (zh) | 2020-01-06 | 2025-07-01 | 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 | 過濾系統、過濾板、及反應器系統 |
| JP7636892B2 (ja) | 2020-01-06 | 2025-02-27 | エーエスエム・アイピー・ホールディング・ベー・フェー | チャネル付きリフトピン |
| JP7730637B2 (ja) | 2020-01-06 | 2025-08-28 | エーエスエム・アイピー・ホールディング・ベー・フェー | ガス供給アセンブリ、その構成要素、およびこれを含む反応器システム |
| US11993847B2 (en) | 2020-01-08 | 2024-05-28 | Asm Ip Holding B.V. | Injector |
| US11401602B2 (en) | 2020-01-10 | 2022-08-02 | Applied Materials, Inc. | Catalyst enhanced seamless ruthenium gap fill |
| KR20210093163A (ko) | 2020-01-16 | 2021-07-27 | 에이에스엠 아이피 홀딩 비.브이. | 고 종횡비 피처를 형성하는 방법 |
| KR20210093758A (ko) | 2020-01-17 | 2021-07-28 | 에이에스엠 아이피 홀딩 비.브이. | 적산값을 모니터링하는 기판 처리 장치 및 기판 처리 방법 |
| KR102675856B1 (ko) | 2020-01-20 | 2024-06-17 | 에이에스엠 아이피 홀딩 비.브이. | 박막 형성 방법 및 박막 표면 개질 방법 |
| KR20210094462A (ko) | 2020-01-20 | 2021-07-29 | 에이에스엠 아이피 홀딩 비.브이. | 전처리를 사용하여 실리콘 질화물 층을 증착하는 방법, 상기 방법을 사용하여 형성된 구조체, 및 상기 방법을 수행하기 위한 시스템 |
| KR20210095798A (ko) | 2020-01-23 | 2021-08-03 | 에이에스엠 아이피 홀딩 비.브이. | 반응 챔버 압력을 안정화하기 위한 시스템 및 방법 |
| TWI889744B (zh) | 2020-01-29 | 2025-07-11 | 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 | 污染物捕集系統、及擋板堆疊 |
| TW202513845A (zh) | 2020-02-03 | 2025-04-01 | 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 | 半導體裝置結構及其形成方法 |
| KR20210100010A (ko) | 2020-02-04 | 2021-08-13 | 에이에스엠 아이피 홀딩 비.브이. | 대형 물품의 투과율 측정을 위한 방법 및 장치 |
| KR20210100535A (ko) | 2020-02-05 | 2021-08-17 | 에이에스엠 아이피 홀딩 비.브이. | 탄소 재료를 포함한 구조체를 형성하는 방법, 이 방법을 사용하여 형성된 구조체, 및 이 구조체를 형성하기 위한 시스템 |
| US11776846B2 (en) | 2020-02-07 | 2023-10-03 | Asm Ip Holding B.V. | Methods for depositing gap filling fluids and related systems and devices |
| KR102863063B1 (ko) | 2020-02-12 | 2025-09-22 | 에이에스엠 아이피 홀딩 비.브이. | 다중 방향 반응 챔버를 갖는 반응기 시스템 |
| TW202146691A (zh) | 2020-02-13 | 2021-12-16 | 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 | 氣體分配總成、噴淋板總成、及調整至反應室之氣體的傳導率之方法 |
| KR20210103956A (ko) | 2020-02-13 | 2021-08-24 | 에이에스엠 아이피 홀딩 비.브이. | 수광 장치를 포함하는 기판 처리 장치 및 수광 장치의 교정 방법 |
| KR20210105289A (ko) | 2020-02-14 | 2021-08-26 | 에이에스엠 아이피 홀딩 비.브이. | 펄스형 플라즈마 전력을 사용하여 유전체 재료 층을 형성하기 위한 방법, 이 층을 포함한 구조물 및 소자, 그리고 이 층을 형성하기 위한 시스템 |
| TWI855223B (zh) | 2020-02-17 | 2024-09-11 | 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 | 用於生長磷摻雜矽層之方法 |
| US20210265158A1 (en) | 2020-02-25 | 2021-08-26 | Asm Ip Holding B.V. | Method of forming low-k material layer, structure including the layer, and system for forming same |
| CN113410160A (zh) | 2020-02-28 | 2021-09-17 | Asm Ip私人控股有限公司 | 专用于零件清洁的系统 |
| KR20210113043A (ko) | 2020-03-04 | 2021-09-15 | 에이에스엠 아이피 홀딩 비.브이. | 반응기 시스템용 정렬 고정구 |
| US11876356B2 (en) | 2020-03-11 | 2024-01-16 | Asm Ip Holding B.V. | Lockout tagout assembly and system and method of using same |
| KR20220116024A (ko) | 2020-03-11 | 2022-08-19 | 어플라이드 머티어리얼스, 인코포레이티드 | 촉매화된 증착을 사용하는 갭 충전 방법들 |
| KR20210116240A (ko) | 2020-03-11 | 2021-09-27 | 에이에스엠 아이피 홀딩 비.브이. | 조절성 접합부를 갖는 기판 핸들링 장치 |
| KR102775390B1 (ko) | 2020-03-12 | 2025-02-28 | 에이에스엠 아이피 홀딩 비.브이. | 타겟 토폴로지 프로파일을 갖는 층 구조를 제조하기 위한 방법 |
| CN113394067A (zh) | 2020-03-13 | 2021-09-14 | Asm Ip私人控股有限公司 | 基板处理设备 |
| US12173404B2 (en) | 2020-03-17 | 2024-12-24 | Asm Ip Holding B.V. | Method of depositing epitaxial material, structure formed using the method, and system for performing the method |
| KR102755229B1 (ko) | 2020-04-02 | 2025-01-14 | 에이에스엠 아이피 홀딩 비.브이. | 박막 형성 방법 |
| TWI887376B (zh) | 2020-04-03 | 2025-06-21 | 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 | 半導體裝置的製造方法 |
| TWI888525B (zh) | 2020-04-08 | 2025-07-01 | 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 | 用於選擇性蝕刻氧化矽膜之設備及方法 |
| KR20210127087A (ko) | 2020-04-10 | 2021-10-21 | 에이에스엠 아이피 홀딩 비.브이. | 기체 공급 유닛 및 이를 포함하는 기판 처리 장치 |
| KR20210127620A (ko) | 2020-04-13 | 2021-10-22 | 에이에스엠 아이피 홀딩 비.브이. | 질소 함유 탄소 막을 형성하는 방법 및 이를 수행하기 위한 시스템 |
| US11821078B2 (en) | 2020-04-15 | 2023-11-21 | Asm Ip Holding B.V. | Method for forming precoat film and method for forming silicon-containing film |
| KR20210128343A (ko) | 2020-04-15 | 2021-10-26 | 에이에스엠 아이피 홀딩 비.브이. | 크롬 나이트라이드 층을 형성하는 방법 및 크롬 나이트라이드 층을 포함하는 구조 |
| US11996289B2 (en) | 2020-04-16 | 2024-05-28 | Asm Ip Holding B.V. | Methods of forming structures including silicon germanium and silicon layers, devices formed using the methods, and systems for performing the methods |
| KR20210129598A (ko) | 2020-04-17 | 2021-10-28 | 에이에스엠 아이피 홀딩 비.브이. | 수직형 퍼니스의 반응기 내에 배열되도록 구성된 인젝터와 수직형 퍼니스 |
| KR20210130646A (ko) | 2020-04-21 | 2021-11-01 | 에이에스엠 아이피 홀딩 비.브이. | 기판을 처리하기 위한 방법 |
| KR20220021863A (ko)* | 2020-08-14 | 2022-02-22 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 방법 |
- 2021
- 2021-04-15TWTW110113549Apatent/TW202202649A/zhunknown
- 2021-04-15KRKR1020210049468Apatent/KR102707957B1/koactiveActive
- 2021-04-16CNCN202110410051.1Apatent/CN113913777B/zhactiveActive
- 2021-04-16USUS17/233,384patent/US12020934B2/enactiveActive
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| KR102707957B1 (ko) | 2024-09-19 |
| US20220013358A1 (en) | 2022-01-13 |
| KR20220006455A (ko) | 2022-01-17 |
| US12020934B2 (en) | 2024-06-25 |
| CN113913777B (zh) | 2025-07-01 |
| CN113913777A (zh) | 2022-01-11 |
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