本發明係關於晶圓固持設備上電鍍之遠程偵測。The invention relates to remote detection of electroplating on wafer holding equipment.
半導體加工及處理的最新進展使得電鍍的使用增加，以在半導體裝置上沉積各種材料。此類材料包含經電鍍之銅、鎳、及錫-銀合金。Recent advances in semiconductor processing and processing have increased the use of electroplating to deposit various materials on semiconductor devices. Such materials include electroplated copper, nickel, and tin-silver alloys.
本文的某些實施例係關於偵測電鍍設備之基板固持件上存在或不存在不樂見之金屬沉積物的方法、設備、及滴液屏蔽件。Certain embodiments herein relate to a method, apparatus, and drip shield for detecting the presence or absence of undesired metal deposits on a substrate holder of a plating apparatus.
本文之實施例的一種態樣中，提供一種電鍍設備，該電鍍設備包含：一電解液容器，其係配置以在電鍍期間容納電解液；一基板固持件，其係配置以在電鍍期間支持一基板，其中該基板固持件為環形的、且在其周邊支持該基板，該基板固持件包含一感測器目標區域；以及一電鍍感測器，其包含瞄準該感測器目標區域的一光源，其中該電鍍感測器在下列區域之間作區分：(i)存在不樂見之金屬沉積物的該感測器目標區域上的區域、以及(ii)不存在不樂見之金屬沉積物的該感測器目標區域上的區域。In one aspect of the embodiments herein, an electroplating device is provided. The electroplating device includes: an electrolytic solution container configured to receive an electrolytic solution during electroplating; and a substrate holder configured to support an electroplating device A substrate, wherein the substrate holder is annular and supports the substrate at its periphery, the substrate holder includes a sensor target area; and a galvanic sensor including a light source aimed at the sensor target area Where the electroplated sensor distinguishes between: (i) an area on the sensor target area where undesired metal deposits are present, and (ii) no unpopular metal deposits The area on the target area of the sensor.
在許多實施例中，該基板固持件包含一杯件及一唇形密封，該杯件包含一底表面及一內壁，其中該唇形密封係定位於該杯件之該內壁的頂部。在一些此類情況下，該感測器目標區域係在該唇形密封上。在其他情況下，該感測器目標區域係在該杯件之該內壁上。在某些情況下，該感測器目標區域係在該杯件之該內壁及該唇形密封兩者上。In many embodiments, the substrate holder includes a cup member and a lip seal, the cup member includes a bottom surface and an inner wall, wherein the lip seal is positioned on top of the inner wall of the cup member. In some such cases, the sensor target area is tied to the lip seal. In other cases, the sensor target area is on the inner wall of the cup. In some cases, the sensor target area is on both the inner wall of the cup and the lip seal.
該電鍍設備可更包含一滴液屏蔽件。該電鍍感測器可定位於該滴液屏蔽件上。該滴液屏蔽件可包含一壁部及一中心開口，該基板固持件可穿過該中心開口。該壁部可為界定該中心開口的周邊壁部。在特定實施例中，該設備包含一滴液屏蔽件，其中該電鍍感測器係定位於該滴液屏蔽件上。在該等或其他情況下，該滴液屏蔽件可包含一壁部及一中心開口，該基板固持件可穿過該中心開口。該電鍍感測器可為各種類型的感測器。例如，該電鍍感測器可為色彩為基的感測器、強度為基的感測器、或照相機。The plating apparatus may further include a drip shield. The plating sensor can be positioned on the drip shield. The drip shield may include a wall portion and a central opening, and the substrate holder may pass through the central opening. The wall portion may be a peripheral wall portion defining the central opening. In a particular embodiment, the device includes a drip shield, wherein the galvanic sensor is positioned on the drip shield. In these or other cases, the drip shield may include a wall portion and a central opening through which the substrate holder may pass. The plated sensor can be various types of sensors. For example, the plating sensor may be a color-based sensor, an intensity-based sensor, or a camera.
在一實施例中，該電鍍設備更包含一對準器具，其裝配於該基板固持件上，該對準器具包含第一部分及第二部分，其中對於該電鍍感測器所量測的特性，該第一及第二部分係可與彼此區分的。在一些此類實施例中，該基板固持件包含一杯件及一唇形密封，該杯件包含一底表面及一內壁，其中該唇形密封係定位於該杯件之該內壁的頂部，其中該對準器具之該第一部分靠近該唇形密封，以使該電鍍感測器偵測該唇形密封上存在或不存在金屬沉積物。在另一實施例中，該基板固持件包含一杯件及一唇形密封，該杯件包含一底表面及一內壁，其中該唇形密封係定位於該杯件之該內壁的頂部，其中該對準器具之該第一部分靠近該杯件之該內壁，以使該電鍍感測器偵測該杯件之該內壁上存在或不存在金屬沉積物。In one embodiment, the electroplating device further includes an alignment device, which is assembled on the substrate holder. The alignment device includes a first part and a second part, and for the characteristics measured by the electroplating sensor, The first and second parts are distinguishable from each other. In some such embodiments, the substrate holder includes a cup member and a lip seal, the cup member includes a bottom surface and an inner wall, wherein the lip seal is positioned on top of the inner wall of the cup member Wherein the first part of the alignment device is close to the lip seal, so that the electroplating sensor detects the presence or absence of metal deposits on the lip seal. In another embodiment, the substrate holding member includes a cup member and a lip seal, the cup member includes a bottom surface and an inner wall, wherein the lip seal is positioned on the top of the inner wall of the cup member, The first part of the alignment device is close to the inner wall of the cup, so that the electroplating sensor can detect the presence or absence of metal deposits on the inner wall of the cup.
該電鍍設備可更包含使該感測器目標區域乾燥的一乾燥器。在一些此類情況下，該電鍍設備可更包含一控制器，其具有可執行之指令，用以在使用該電鍍感測器偵測存在或不存在不樂見的金屬沉積物之前使該感測器目標區域乾燥。在該等或其他情況下，該基板固持件係可相對於該電鍍感測器而旋轉的。在一些實施例中，該電鍍設備包含一入口，其係配置以將流體輸送至該感測器目標區域。在一些此類情況下，該電鍍設備可更包含一控制器，其具有可執行之指令，用以在使用該電鍍感測器偵測該感測器目標區域中存在或不存在不樂見的金屬沉積物之後、以及使用該電鍍設備在新基板上進行電鍍之前，利用流體將該感測器目標區域潤濕。The electroplating apparatus may further include a dryer for drying the target area of the sensor. In some such cases, the electroplating device may further include a controller having executable instructions for detecting the presence of undesired metal deposits using the electroplating sensor. The target area of the detector is dry. In these or other circumstances, the substrate holder is rotatable relative to the plating sensor. In some embodiments, the electroplating apparatus includes an inlet configured to deliver fluid to a target area of the sensor. In some such cases, the electroplating device may further include a controller having executable instructions for detecting the presence or absence of unpleasant objects in the target area of the sensor using the electroplating sensor. After metal deposits and before plating on a new substrate using the plating equipment, the sensor target area is wetted with a fluid.
本文之實施例的另一態樣中，提供一種用於電鍍設備的滴液屏蔽件，該滴液屏蔽件包含：一周邊壁部，其具有與該電鍍設備中的電解液容器實質相似的直徑；一中心開口，該電鍍設備的該基板固持件可穿過該中心開口，該中心開口係由該周邊壁部所界定；以及一電鍍感測器，其係裝設於該周邊壁部上。In another aspect of the embodiments herein, a drip shield for electroplating equipment is provided. The drip shield includes a peripheral wall portion having a diameter substantially similar to that of an electrolyte container in the electroplating equipment. A central opening through which the substrate holder of the electroplating equipment can pass, the central opening being defined by the peripheral wall portion; and a plating sensor mounted on the peripheral wall portion.
在一些實施例中，該滴液屏蔽件包含靠近該電鍍感測器的一光閘，其中可關閉該光閘以使該電鍍感測器與該電鍍設備的該電解液容器實體分隔。在一些情況下，該滴液屏蔽件包含靠近該電鍍感測器的一窗部，其中該電鍍感測器可透過該滴液屏蔽件的該窗部而進行感測。在一些實施例中，該滴液屏蔽件包含靠近該電鍍感測器的該周邊壁部中的周邊開口，其中該電鍍感測器可透過該周邊開口而進行感測。In some embodiments, the drip shield includes a light shutter close to the plating sensor, wherein the light shutter can be closed to physically separate the plating sensor from the electrolyte container of the plating equipment. In some cases, the drip shield includes a window near the plating sensor, wherein the plating sensor can sense through the window of the drip shield. In some embodiments, the drip shield includes a peripheral opening in the peripheral wall portion near the electroplating sensor, wherein the electroplating sensor can sense through the peripheral opening.
所揭示之實施例的另一態樣中，提供一種偵測電鍍設備之基板固持件上存在或不存在不樂見之金屬沉積物的方法，該方法包含：將該基板固持件定位於一偵測位置，該基板固持件包含一感測器目標區域；以及操作包含一光源的電鍍感測器，以偵測該感測器目標區域中存在或不存在不樂見之金屬沉積物，其中該電鍍感測器及該感測器目標區域係定位於該電鍍設備的相對側上，以使該電鍍感測器的視線延伸橫跨該電鍍設備。In another aspect of the disclosed embodiment, a method for detecting the presence or absence of undesired metal deposits on a substrate holder of an electroplating device is provided. The method includes: positioning the substrate holder on a substrate. The substrate holding member includes a sensor target area; and a galvanic sensor including a light source is operated to detect the presence or absence of undesired metal deposits in the sensor target area, wherein the The electroplating sensor and the target area of the sensor are positioned on opposite sides of the electroplating device so that the line of sight of the electroplating sensor extends across the electroplating device.
以下參照相關圖式而說明該等及其他特徵。These and other features are described below with reference to related drawings.
在此應用中，用語「半導體晶圓」、「晶圓」、「基板」、「晶圓基板」、及「部分加工之積體電路」係可互換地使用。該領域中具通常知識者將會理解：用語「部分加工之積體電路」可指涉在其上的積體電路加工之許多階段之任一者期間的矽晶圓。用於半導體裝置產業中的晶圓或基板通常具有200 mm、或300 mm、或450 mm的直徑。再者，用語「電解液」、「電鍍池」、「池」、及「電鍍溶液」係可互換地使用。以下的詳細說明假設在晶圓上施行實施例。然而，實施例並非如此受限。工件可為各種外形、尺寸、及材料。除了半導體晶圓之外，可利用所揭示之實施例的其他工件包含各種物件，例如印刷電路板、磁記錄媒體、磁記錄感測器、鏡、光學元件、微機械裝置等。In this application, the terms "semiconductor wafer", "wafer", "substrate", "wafer substrate", and "partially processed integrated circuit" are used interchangeably. Those of ordinary skill in the art will understand that the term "partially processed integrated circuit" may refer to a silicon wafer during any of the many stages of integrated circuit processing thereon. Wafers or substrates used in the semiconductor device industry typically have a diameter of 200 mm, or 300 mm, or 450 mm. Furthermore, the terms "electrolyte", "plating cell", "pool", and "plating solution" are used interchangeably. The following detailed description assumes that the embodiments are implemented on a wafer. However, the embodiments are not so limited. The workpiece can be of various shapes, sizes, and materials. In addition to semiconductor wafers, other workpieces that can utilize the disclosed embodiments include various objects such as printed circuit boards, magnetic recording media, magnetic recording sensors, mirrors, optical elements, micromechanical devices, and the like.
在以下的敘述中，說明了大量的特定細節，以提供對本發明的徹底理解。在毋須若干或全部此等特定細節之情況下即可實行本發明。在其他範例中，為了不使本發明晦澀難懂，習知的處理操作不會有詳細描述。雖然本發明與特定實施例一同敘述，但應理解，並非試圖限制本發明。In the following description, numerous specific details are described to provide a thorough understanding of the present invention. The invention may be practiced without some or all of these specific details. In other examples, in order not to obscure the present invention, conventional processing operations will not be described in detail. Although the invention has been described in conjunction with specific embodiments, it should be understood that it is not intended to limit the invention.
雖然本文之討論著重於由杯件及唇形密封所構成的基板固持件，但可使用其他配置。一般而言，當本文使用用語「杯件底部」或「基板固持件底部」時，該等用語係意圖包含任何晶圓固持件之底部，而無論是否該晶圓固持件係由如圖中所描繪之杯件所構成。晶圓固持件的底表面一般為晶圓固持件面向電鍍溶液之側。其通常係定向於與基板被電鍍之面實質相同之方向上、且通常表面上與晶圓同平面。晶圓固持件之杯件亦可包含內壁(有時稱為內表面)，其可從基板固持件之底表面垂直或傾斜向上延伸。內壁可具有環狀外形，該環狀外形具有稍微小於基板直徑的直徑。晶圓固持件通常係安置於基板的周邊部分周圍(以使晶圓固持件支持基板的邊緣)、且從基板徑向往外延伸。如本文所使用，用語「唇形密封」一般指涉晶圓固持件之一部分，該部分與晶圓邊緣嚙合、且產生在將晶圓的整個電鍍面暴露於電鍍溶液時保護晶圓固持件內部(包含用於連接至晶圓的電性接點)免於受電鍍溶液影響的密封。可將唇形密封安置於基板固持件之杯件內壁的頂部。可使用各種唇形密封設計之任一者。Although the discussion in this article focuses on the substrate holder consisting of a cup and a lip seal, other configurations may be used. Generally speaking, when the terms “cup bottom” or “substrate holder bottom” are used herein, these terms are intended to include the bottom of any wafer holder, whether or not the wafer holder is as shown in the figure. Consisting of cups depicted. The bottom surface of the wafer holder is generally the side of the wafer holder facing the plating solution. It is usually oriented in substantially the same direction as the surface on which the substrate is plated, and is usually on the same plane as the wafer. The cup piece of the wafer holder may also include an inner wall (sometimes referred to as an inner surface), which may extend vertically or obliquely upward from the bottom surface of the substrate holder. The inner wall may have an annular shape having a diameter slightly smaller than the diameter of the substrate. The wafer holder is usually disposed around a peripheral portion of the substrate (so that the wafer holder supports the edge of the substrate) and extends radially outward from the substrate. As used herein, the term "lip seal" generally refers to a portion of a wafer holder that engages the edge of the wafer and results in protecting the inside of the wafer holder when the entire plating surface of the wafer is exposed to a plating solution (Including electrical contacts for connection to the wafer) Sealed from plating solution. The lip seal can be placed on the top of the inner wall of the cup of the substrate holder. Any of a variety of lip seal designs can be used.
為了簡明及清楚，本文之大部份範例係關於晶圓面朝下之「噴泉式」電鍍設備。在此類設備中，欲電鍍之工件(通常為半導體晶圓或其他基板)一般具有實質上水平方向(在一些情況下，在整個電鍍處理期間或其中一些部分，其可能與真水平相差若干度)、且在電鍍期間可被驅動而旋轉，其產生大致垂直向上的電解液對流圖案。由晶圓之中心往邊緣的衝擊流質量、以及旋轉的晶圓在其邊緣(相對於其中心)之固有較高角速度之整合作用，使徑向漸增的剪力(與晶圓平行)之流動圖案產生。具有杯件及圓錐配置的蛤殼式電鍍設備經常用以在電鍍之前及期間將晶圓固持於適當位置。蛤殼式及噴泉式電鍍槽/設備之範例係包含於由加州費利蒙的蘭姆研究公司所生產及提供的電鍍系統之Sabre®系列中。此外，蛤殼及噴泉式電鍍系統係在例如以下美國專利中說明：2001年08月10日提交的美國專利第6,800,187號、以及2010年02月11日提交的美國專利第8,308,931號，在此藉由參照全文將其引入。雖然本文之敘述主要著重於晶圓及固持件面朝下的方向、平行於局部地球表面的平面，但應理解，諸如與地球表面成角度或垂直之其他方向並未被排除，而亦可設想。For brevity and clarity, most of the examples in this article are about "Fountain-style" electroplating equipment with wafers facing down. In such equipment, the workpiece (usually a semiconductor wafer or other substrate) to be plated generally has a substantially horizontal orientation (in some cases, during the entire plating process or some parts thereof, it may differ by several degrees from the true level ), And can be driven to rotate during electroplating, which produces a substantially vertical upward convection pattern of the electrolyte. The integration of the mass of the impinging stream from the center of the wafer to the edge, and the inherently higher angular velocity of the rotating wafer at its edge (relative to its center), make the radial shear force (parallel to the wafer) A flow pattern is produced. Clamshell electroplating equipment with cups and cone configurations is often used to hold wafers in place before and during electroplating. Examples of clamshell and fountain plating tanks / equipment are included in the Sabre® series of plating systems produced and supplied by Lam Research, Inc. of Fremont, California. In addition, the clamshell and fountain plating systems are described in, for example, the following U.S. patents: U.S. Patent No. 6,800,187, filed on August 10, 2001, and U.S. Patent No. 8,308,931, filed on February 11, 2010, borrowed herein It is incorporated by reference in its entirety. Although the description in this article mainly focuses on the downward direction of the wafer and the holder, and a plane parallel to the local earth surface, it should be understood that other directions such as an angle or perpendicular to the earth surface are not excluded, and it is also conceivable .
再者，雖然本文的討論與範例大體上著重於錫/銀增長物(buildup)的偵測，但可實行實施例以偵測在偵測器所聚焦的區域中之任何材料的存在。基板固持件上的不樂見之金屬沉積物Furthermore, although the discussions and examples herein generally focus on the detection of tin / silver buildups, embodiments may be implemented to detect the presence of any material in the area the detector is focusing on.Undesirable metal deposits on substrate holders
隨著晶圓被設計成在晶圓邊緣附近具有越來越多特徵部，其特別可能受此類電鍍所影響，使得相關於唇形密封及杯件底部上之假性金屬沉積物的問題加劇。再者，近邊特徵部的存在引起晶圓固持件與密封上的假性沉積物的產生。當靠近邊緣的特徵部密度高時，近邊特徵部與唇形密封鍍層之間的干擾大許多。追求更多近邊特徵部的動機係來自使可從單一晶圓獲得的半導體裝置數目最大化之期望。As wafers are designed with more and more features near the edges of the wafer, they are particularly likely to be affected by this type of plating, exacerbating the problems associated with lip seals and false metal deposits on the bottom of the cup . Furthermore, the presence of near-side features causes the generation of false deposits on wafer holders and seals. When the density of features near the edge is high, the interference between the features near the edge and the lip seal plating is much larger. The motivation for pursuing more near-edge features comes from the desire to maximize the number of semiconductor devices available from a single wafer.
在本文所示之範例中，電鍍設備包含一杯件以在電鍍期間支持晶圓。杯件藉由支持晶圓的外周而將晶圓固持於適當位置。因此杯件在其中心具有巨大開口，該開口具有稍微小於晶圓直徑的直徑。圖1顯示包含杯件102的晶圓定位系統101。在某些情況下，可利用具有不黏附特性之材料塗佈杯件102，例如聚偏二氟乙烯(PVDF，例如由法國科倫布的Arkema可得的Kynar®)或聚四氟乙烯(PTFE，例如由德拉瓦州威明頓的Dupont可得的Teflon®)、聚矽氧、或諸如Cuisinart之「CeramicaTM」或「ThermolonTM」的矽與氧之類玻璃陶瓷不黏附材料。In the example shown herein, the plating equipment includes a cup to support the wafer during plating. The cup holds the wafer in place by supporting the periphery of the wafer. The cup therefore has a huge opening in its center, which has a diameter slightly smaller than the diameter of the wafer. FIG. 1 shows a wafer positioning system 101 including a cup 102. In some cases, the cup 102 may be coated with a material having non-adhesive properties, such as polyvinylidene fluoride (PVDF, such as Kynar® available from Arkema, Columbus, France) or polytetrafluoroethylene (PTFE , Such as Teflon® available from Dupont, Wilmington, Delaware), polysiloxane, or glass-ceramic non-adhesive materials such as "CeramicaTM " or "ThermolonTM " of Cuisinart.
在一範例中，杯件102包含底表面103及內壁104(亦稱為內表面104)。內壁104可為垂直定向的、實質上正交於杯件102的底表面103。內壁104亦可係定向於非垂直之角度上。在某些情況下，內壁104可具有介於約1.0至1.5 mm之間的高度。唇形密封105係安置於內壁104之頂部、且在電鍍期間係與晶圓嚙合，其形成周邊密封。在某些實施例中，唇形密封105可具有介於約0.75至1.5 mm之間的高度。在電鍍期間，唇形密封105保護位在唇形密封105之徑向外側的電性接點(未顯示)。在杯件的內壁104之底部處，杯件102水平徑向地往外延伸(徑向往外且平行於晶圓)。此水平表面為杯件102的底表面103。In one example, the cup 102 includes a bottom surface 103 and an inner wall 104 (also referred to as the inner surface 104). The inner wall 104 may be vertically oriented and substantially orthogonal to the bottom surface 103 of the cup 102. The inner wall 104 may also be oriented at a non-vertical angle. In some cases, the inner wall 104 may have a height between about 1.0 to 1.5 mm. The lip seal 105 is placed on top of the inner wall 104 and is engaged with the wafer during electroplating, which forms a peripheral seal. In some embodiments, the lip seal 105 may have a height between about 0.75 to 1.5 mm. During plating, the lip seal 105 protects electrical contacts (not shown) located radially outward of the lip seal 105. At the bottom of the inner wall 104 of the cup, the cup 102 extends horizontally and radially outward (radially outward and parallel to the wafer). This horizontal surface is the bottom surface 103 of the cup 102.
雖然在杯件本身上的非期望電鍍起初始於杯件102接觸唇形密封105之處的杯件內壁104，但電鍍可沿此內壁104向下、在杯件102之拐角處周圍、並在杯件102的底表面103上徑向往外進行。非期望之金屬沉積物係顯示為元件106。當非期望金屬沉積物106到達底表面103時，重大的製造缺陷可能發生，且當杯件102的底表面103存在鍍層時，受處理的晶圓經常受到破壞或具有非常低的良率。轉移至杯件底部的電鍍與成長係部分肇因於以下事實：相比於唇形密封105，金屬較容易附著於杯件102上(特別係底表面103)。雖然可利用諸如氟化聚合物(例如聚四氟乙烯，PTFE)之不黏附塗層以塗佈底表面103及杯件102的其他部分，俾協助防止金屬附著於此表面上，但沉積物有時仍可能形成於底表面103上。在許多情況下，一旦鍍層開始存在於底表面103上，則沉積速率實質上增加，且沉積可能迅速地失控並電鍍於整個底表面103。Although the undesired plating on the cup itself begins at the cup inner wall 104 where the cup 102 contacts the lip seal 105, the plating can go down this inner wall 104, around the corner of the cup 102, It is performed radially outward on the bottom surface 103 of the cup member 102. An undesired metal deposit system is shown as element 106. When the undesired metal deposit 106 reaches the bottom surface 103, major manufacturing defects may occur, and when there is a plating on the bottom surface 103 of the cup 102, the processed wafer is often damaged or has a very low yield. The electroplating and growth system transferred to the bottom of the cup is due in part to the fact that, compared to the lip seal 105, metal is more likely to adhere to the cup 102 (particularly the bottom surface 103). Although a non-stick coating such as a fluorinated polymer (e.g., polytetrafluoroethylene, PTFE) can be used to coat the bottom surface 103 and other parts of the cup 102, to help prevent metals from adhering to this surface, the deposits have May still be formed on the bottom surface 103. In many cases, once the plating layer begins to exist on the bottom surface 103, the deposition rate substantially increases, and the deposition may quickly run out and plate over the entire bottom surface 103.
由於錫-銀合金經常係在接近半導體製造程序末期時沉積(例如，作為錫-銀焊接點)，故用於錫-銀沉積處理中的晶圓通常非常昂貴，其在到達整體生產製程中的此處之前已經歷許多處理操作。因此，未能偵測到基板固持件上的鍍層(其可能導致低良率或偏離規格的晶圓加工)可能尤其代價高昂。Since tin-silver alloys are often deposited near the end of the semiconductor manufacturing process (for example, as tin-silver solder joints), wafers used in tin-silver deposition processes are often very expensive, and they reach the overall production process. There have been many processing operations before here. As a result, failure to detect plating on substrate holders, which can lead to low yield or off-spec wafer processing, can be particularly costly.
不受限於特定理論，吾人相信錫-銀合金之假性沉積係肇因於(至少部分)原子錫對於原子銀的顯著差異之還原電位。再者，吾人相信假性沉積之成長首先發生在唇形密封晶圓介面處的錫電鍍(帶有少量銀成分)，接著透過唇形密封及杯件之表面上的置換反應(Sn + 2Ag+→ Sn2++ 2Ag)，而導致兩個銀原子(帶有氧化態+1) 取代每個錫原子(帶有氧化態+2)、以及假性薄膜之體積的相應成長。再次，不受限於特定理論，吾人相信由具有顯著不同之還原電位(例如，具有大於約100 mV以上的還原電位差異)的金屬所形成的其他金屬或合金沉積物，可能導致涉及電鍍組件之唇形密封及杯件上的假性金屬沉積之相同或相似問題。Without being limited to a particular theory, I believe that the pseudo-deposition of tin-silver alloys is due to (at least in part) the reduction potential of atomic tin that differs significantly from atomic silver. Furthermore, I believe that the growth of pseudo-deposition occurs first with tin plating (with a small amount of silver) at the lip seal wafer interface, and then through the lip seal and the displacement reaction on the surface of the cup (Sn + 2Ag+ → Sn2+ + 2Ag), resulting in two silver atoms (with oxidation state +1) replacing each tin atom (with oxidation state +2), and the corresponding growth of the volume of the pseudo-film. Again, without being limited to a particular theory, I believe that other metal or alloy deposits formed from metals with significantly different reduction potentials (for example, with reduction potential differences greater than about 100 mV or more) may lead to The same or similar issues with lip seals and false metal deposition on cups.
杯件之底部及內表面上的金屬沉積物可能導致以下兩者：(1)接近不樂見之沉積物的區域中的局部不均勻性，其係肇因於電流與電位分佈的局部變異、以及(2)沉積於整體晶圓上的薄膜之平均厚度減小。因此良率之損失不僅與雜散的金屬粒子有關，且亦肇因於預定電鍍於晶圓本身上的電荷之擷取(scavenging)或「電流汲取(current sinking)」。第一項影響一般局限於發生不樂見之鍍層處周圍的晶圓上區域，因為係局部地，電流從基板邊緣附近的特徵部被引出至杯件的底部及內表面，其使得近邊特徵部比期望值更薄。隨著杯件上的不樂見鍍層之程度增加，當電鍍於杯件本身上的電流總量相對於需電鍍整體晶圓之電流總量而變得顯著，且因此電鍍於晶圓上之特徵部的平均厚度下降至低於目標平均厚度時，第二項影響(比整體晶圓上之期望平均電鍍厚度更薄)發生。Metal deposits on the bottom and inner surfaces of the cup may cause both of the following: (1) Local inhomogeneities in areas close to undesired deposits due to local variations in current and potential distribution, And (2) the average thickness of the thin film deposited on the entire wafer is reduced. Therefore, the loss of yield is not only related to the stray metal particles, but also due to the scavenging or "current sinking" of the charges scheduled to be plated on the wafer itself. The first effect is generally limited to the area above the wafer where the undesired plating occurs, because locally, current is drawn from the feature near the edge of the substrate to the bottom and inner surface of the cup, which makes near-edge features The part is thinner than expected. As the degree of unpleasant plating on the cup increases, the amount of current that is electroplated on the cup itself becomes significant relative to the total current of the entire wafer to be plated, and therefore the characteristics of plating on the wafer When the average thickness of the portion falls below the target average thickness, a second effect (thinner than the expected average plating thickness on the overall wafer) occurs.
相比於具有較高量開放區域(期望被電鍍之區域)的基板，具有較低量開放區域的基板對於基板固持件上的不樂見鍍層之存在更加敏感。該等低開放區域/低特徵部密度之基板係因以下事實而更加敏感：杯件上的不樂見鍍層區域與期望基板電鍍區域之比率係相對高的。換言之，由於電流應被傳送至基板的區域係小的，因此易於在杯件上存在不樂見鍍層時將此電流之顯著量重新定向。相反地，對於高開放區域/高特徵部密度之基板，期望傳送電流的區域係較大的。因此，杯件上開始進行不樂見電鍍會吸引相對較小部分之傳送至晶圓的電流。在以上兩種情況下，以下係有利的：盡快地立即偵測小量電鍍俾避免處理並非以目標均勻性或平均厚度進行電鍍的晶圓。A substrate with a lower amount of open areas is more sensitive to the presence of undesired plating on a substrate holder than a substrate with a higher amount of open areas (areas that are expected to be plated). These low open area / low feature density substrates are more sensitive due to the fact that the ratio of the undesired plating area on the cup to the desired substrate plating area is relatively high. In other words, since the area where the current should be transmitted to the substrate is small, it is easy to redirect this significant amount of current when there is an uncomfortable plating on the cup. Conversely, for a substrate with a high open area / high feature density, the area where the current is expected to be transmitted is larger. As a result, unwelcome plating on cups will attract a relatively small portion of the current delivered to the wafer. In both cases, the following is advantageous: detect small amounts of plating immediately as soon as possible, and avoid processing wafers that are not plated with target uniformity or average thickness.
在上列兩種電鍍問題中，有害影響發生係肇因於：金屬沉積物從晶圓表面(所期望之處)有效地擷取電流、並將其重新定向至金屬沉積物本身(非期望地使甚至更多電鍍發生於沉積物之位置處)。在許多錫/銀沉積處理中(例如，形成記憶體裝置上的相對低I/O數目之凸塊)，晶圓上的開放區域量(例如，預定將電流導向且電鍍發生之區域)可能非常小(例如，晶圓面的約0.5-3%)。因此，電流被導向晶圓上相當小的區域，其可與杯件上之金屬沉積物的尺寸相當。部分因為該兩區域之尺寸相當，故應被導向晶圓上開放區域的比例上大量電流改為被導向杯件上之沉積物。因此，在杯件之底或內表面上即使小量電鍍之形成可能對特徵部周圍的晶圓電鍍造成重大影響。此外，若沉積物夠大，其可能影響晶圓上之整體電鍍厚度。當然，此可能造成晶圓上許多或所有晶片失效。用於支持300 mm晶圓的杯件之底表面區域通常約為200 cm2。300 mm晶圓的暴露區域約為700 cm2。若遮蔽300 mm晶圓以暴露晶圓表面之小部分(例如，1%)，則晶圓上之電鍍區域約為7 cm2。若杯底的非常小部分(例如，若僅約0.5%的杯底、或約1x1 cm之區塊(1 cm2) )受到電鍍，則晶圓上電鍍之平均速率可能以例如約14% (100*1 cm2/7 cm2= 14%)之顯著量減少。用以移除不樂見金屬沉積物之清潔處理Of the two electroplating problems listed above, the deleterious effects are caused by the metal deposits effectively extracting current from the wafer surface (where desired) and redirecting it to the metal deposit itself (undesirably (Even more plating occurs at the location of the deposit). In many tin / silver deposition processes (e.g., forming a relatively low I / O number of bumps on a memory device), the amount of open area on the wafer (e.g., areas where current is intended to be directed and where electroplating occurs) can be significant Small (for example, about 0.5-3% of the wafer face). Therefore, the current is directed to a relatively small area on the wafer, which can be comparable to the size of the metal deposits on the cup. Partly because the two regions have the same size, a large amount of current in the proportion of the open region on the wafer that should be directed is changed to the deposit on the cup. Therefore, the formation of even a small amount of plating on the bottom or inner surface of the cup may have a significant impact on the plating of the wafer around the features. In addition, if the deposit is large enough, it may affect the overall plating thickness on the wafer. Of course, this may cause many or all of the wafers to fail. The bottom surface area of a cup used to support a 300 mm wafer is typically about 200 cm2 . The exposed area of a 300 mm wafer is approximately 700 cm2 . If a 300 mm wafer is masked to expose a small portion (for example, 1%) of the wafer surface, the plated area on the wafer is about 7 cm2 . If a very small portion of the bottom of the cup (for example, if only about 0.5% of the bottom of the cup, or about 1x1 cm of the block (1 cm2 )) is plated, the average rate of plating on the wafer may be, for example, about 14% (100 * reduce the1 cm 2/7 cm 2 = 14%) of the significant amount.Cleaning treatment to remove unwelcome metal deposits
由於假性錫/銀增長物可能導致輪廓問題，故以下係重要的：偵測錫/銀沉積物，並接著將其從唇形密封及杯底移除或清潔、或者更換杯底及唇形密封。可使用不同清潔技術以移除不樂見之沉積物。在一些情況下，可以自動的方式完成清潔。在其他情況下，可人工啟動及/或執行清潔。用於清潔基板固持件之範例技術在下列美國專利及專利申請案中討論與說明(在此藉由參照全文引入各者)：案名為「AUTOMATED CLEANING OF WAFER PLATING ASSEMBLY」的美國專利第9,221,081號；案名為「CLEANING ELECTROPLATING SUBSTRATE HOLDERS USING REVERSE CURRENT DEPLATING」的美國專利第9,476,139號；以及2013年03月28日提交的案名為「METHODS AND APPARATUSES FOR CLEANING ELECTROPLATING SUBSTRATE HOLDERS」的美國專利申請案第13/852,767號。Since false tin / silver growths can cause contouring issues, it is important to detect tin / silver deposits and then remove or clean them from the lip seal and cup bottom, or replace the cup bottom and lip shape seal. Different cleaning techniques can be used to remove undesired deposits. In some cases, cleaning can be done in an automated manner. In other cases, cleaning can be initiated and / or performed manually. Example techniques for cleaning substrate holders are discussed and illustrated in the following U.S. patents and patent applications (herein incorporated by reference in their entirety): U.S. Patent No. 9,221,081 entitled "AUTOMATED CLEANING OF WAFER PLATING ASSEMBLY" ; US Patent No. 9,476,139 entitled "CLEANING ELECTROPLALATING SUBSTRATE HOLDERS USING REVERSE CURRENT DEPLATING"; and US Patent Application No. 13 filed on March 28, 2013 under "METHODS AND APPARATUSES FOR CLEANING ELECTROPLALATING SUBSTRATE HOLDERS" / 852,767.
一旦電鍍發生於杯件之底表面，沉積物通常無法藉由自動清潔處理移除，而必須改為透過不同的處理來移除，例如浸漬或人工擦拭以化學地蝕刻杯件(例如，使用含有或不含有氯化氫的濃硝酸之化學溶液混合物以人工移除沉積物)。因此，在沉積物成長而到達杯件的底表面之前移除此類沉積物係非常有利的。Once electroplating occurs on the bottom surface of the cup, the deposit cannot usually be removed by an automatic cleaning process, but must be removed by a different process, such as dipping or manual wiping to chemically etch the cup (e.g. Or a mixture of chemical solutions of concentrated nitric acid without hydrogen chloride to remove sediment manually). Therefore, it is very advantageous to remove such deposits before they reach the bottom surface of the cup.
在一些實施例中，清潔技術涉及在杯件的唇形密封/底表面/內壁之方向上噴射清潔流體之噴流(例如，去離子水或其他清潔流體)。當基板固持件與清潔流體噴流相對於彼此而轉動時，清潔流體將錫/銀增長物移除。In some embodiments, the cleaning technique involves spraying a jet of cleaning fluid (eg, deionized water or other cleaning fluid) in the direction of the lip seal / bottom surface / inner wall of the cup. When the substrate holder and the cleaning fluid jet rotate relative to each other, the cleaning fluid removes the tin / silver growth.
可使用各種不同的清潔劑/流體。在一些實施例中，清潔劑之選擇會取決於欲移除之不樂見沉積物的成分。例如，不樂見之錫-銀合金沉積物之移除可成功地利用氧化性酸溶液，其中錫與銀之金屬與鹽類皆係可氧化及/或可溶的。因此，在一些實施例中，清潔劑可包含酸及/或氧化劑。用於移除錫-銀合金沉積物之合適清潔劑或清潔溶液的特定範例為硝酸溶液。此溶液可具有例如重量約為或大於5%、10%、15%、20%、25%、35%、或50%之硝酸濃度；或者約為或小於該等濃度之任一者；或在由該等濃度之任一對所界定之範圍內。在一些實施例中，清潔劑/溶液可使用多種酸，例如，舉例而言，硝酸與氫氯酸之組合(亦即，用以形成王水)，且兩種酸皆以上述列舉濃度之任一者存在、或在上述列舉之濃度範圍內。然而，亦可使用其他酸及酸之組合—依然係上述列舉濃度之任一者或列舉之濃度範圍中。在一些實施例中，清潔劑可為金屬錯合劑，且通常係因其如下能力而選用之錯合劑：使構成欲移除之沉積物的金屬錯合的能力。例如，被選為清潔劑的錯合劑可為草酸根離子，因為其使錫錯合。在一些實施例中，銀之錯合劑可被選為清潔劑，例如各種巰基衍生化合物。A variety of different cleaners / fluids can be used. In some embodiments, the choice of cleaning agent will depend on the composition of the undesired deposits to be removed. For example, the removal of undesired tin-silver alloy deposits can successfully utilize oxidizing acid solutions, in which the metals and salts of tin and silver are both oxidizable and / or soluble. Therefore, in some embodiments, the detergent may include an acid and / or an oxidant. A specific example of a suitable cleaner or cleaning solution for removing tin-silver alloy deposits is a nitric acid solution. This solution may have, for example, a nitric acid concentration of about 5%, 10%, 15%, 20%, 25%, 35%, or 50% by weight; or about or less than any of these concentrations; or Within the range defined by any pair of these concentrations. In some embodiments, the detergent / solution can use multiple acids, for example, a combination of nitric acid and hydrochloric acid (i.e., to form aqua regia), and both acids can be used at any of the concentrations listed above. One is present, or within the concentration range listed above. However, other acids and combinations of acids can also be used-still within any of the above listed concentrations or within the listed concentration ranges. In some embodiments, the cleaning agent may be a metal complexing agent, and is generally a complexing agent selected for its ability to complex the metals that make up the deposit to be removed. For example, the complexing agent selected as the cleaning agent may be an oxalate ion because it complexes tin. In some embodiments, the silver complexing agent may be selected as a cleaning agent, such as various thiol-derived compounds.
一種替代清潔方法包含使其中帶有清潔流體的清潔盤件轉動，其中轉動使得清潔流體從盤件中的周邊孔隙散出。清潔溶液接著接觸基板固持件以移除不樂見之沉積物。在一些實施例中，盤件可具有實質上圓形的上表面、實質上圓形的下表面、實質上圓形的連接上與下表面之邊緣、以及在邊緣處開口的複數孔隙。盤件亦可具有延伸進入盤件內的內部區域。在一些實施例中，將孔隙定尺寸，以使清潔劑藉由清潔劑與孔隙內部表面之間的附著力而存留於孔隙內部中。一種使用此清潔盤件之方法可涉及將清潔劑裝載於清潔盤件之複數孔隙中、將清潔盤件定位於半導體處理設備內、並使盤件轉動或操縱盤件以從複數孔隙釋出清潔劑，俾使設備之元件與所釋出之清潔劑接觸。因此，此清潔技術及設備係在美國專利第9,221,081號中進一步說明，上述藉由參照方式引入。An alternative cleaning method includes rotating a cleaning disc with cleaning fluid therein, wherein the rotation causes the cleaning fluid to escape from peripheral pores in the disc. The cleaning solution then contacts the substrate holder to remove undesired deposits. In some embodiments, the disc may have a substantially circular upper surface, a substantially circular lower surface, a substantially circular edge connecting the upper and lower surfaces, and a plurality of pores opening at the edge. The disc may also have an internal area extending into the disc. In some embodiments, the pores are sized so that the cleaning agent is retained in the interior of the pores by the adhesion between the cleaning agent and the internal surface of the pores. A method of using the cleaning disc may involve loading a cleaning agent into a plurality of apertures of the cleaning disc, positioning the cleaning disc in a semiconductor processing device, and rotating the disc or manipulating the disc to release cleaning from the plurality of apertures. Agent, to bring the components of the equipment into contact with the released cleaning agent. Therefore, this cleaning technology and equipment is further described in US Patent No. 9,221,081, which is incorporated by reference above.
另一替代的自動清潔技術涉及反向電流除鍍。此類清潔涉及在電鍍杯件中安置相似於正規受處理基板的清潔(除鍍)盤件。清潔盤件的前表面包含抗腐蝕導電性金屬以形成與杯件表面上之沉積物的電性連接。盤件係密封於杯件中且浸入電鍍溶液中。接著將反向電流(亦即，與通常用以電鍍基板上材料相反的電流)施加至盤件的導電性前表面以啟動沉積物之除鍍。杯件中的密封壓縮在清潔期間可能改變，以引致唇形密封的不同形變、且形成與沉積物的新電性連接。此清潔技術係在美國專利第9,476,139號中進一步說明，上述藉由參照方式引入。Another alternative automatic cleaning technique involves reverse current deplating. This type of cleaning involves the placement of cleaning (de-plating) discs in a plated cup similar to a regular substrate. The front surface of the cleaning plate contains a corrosion-resistant conductive metal to form an electrical connection with the deposits on the surface of the cup. The plate is sealed in the cup and immersed in the plating solution. A reverse current (i.e., the current opposite to the one normally used to plate the material on the substrate) is then applied to the conductive front surface of the disk to initiate de-plating of the deposits. The seal compression in the cup may change during cleaning to cause different deformations of the lip seal and form a new electrical connection to the deposit. This cleaning technique is further described in US Patent No. 9,476,139, which is incorporated by reference above.
在實行自動清潔之前，一般以人工方式進行清潔。操作員會使用浸漬於濃硝酸溶液或能夠溶解金屬之其他試劑的拭子以移除金屬增長物。操作員能夠目視檢查唇形密封及杯底，以確保完全移除金屬。當然，此為花費時間且低效率的處理，其可能對操作員構成危害。自動清潔消除該等問題、且代表對於先前人工技術的顯著進展。然而，在實行自動清潔的情況下，沒有操作員定期地目視檢查增長物，且即使在不樂見之沉積物形成於杯件上之後晶圓可能繼續受處理，其導致該等貴重晶圓的損失。雖然操作員可定期進入以檢查電鍍設備，但由於時間限制及其他各種因素，故操作員檢查增長物的能力有限。因此，例如，目視檢查每天可能僅進行一或兩次。當進行目視檢查時，許多貴重晶圓可能已在杯底經電鍍之條件下受到處理，其造成該等昂貴晶圓的損失(或低良率)。有鑑於此困難，不樂見的沉積物之自動偵測及清潔係特別有價值的。Before the automatic cleaning is performed, it is generally performed manually. Operators use swabs dipped in a concentrated nitric acid solution or other agent capable of dissolving metals to remove metal growth. The operator can visually inspect the lip seal and the bottom of the cup to ensure complete metal removal. Of course, this is a time-consuming and inefficient process that can pose a hazard to the operator. Automatic cleaning eliminates these problems and represents a significant advance over previous manual techniques. However, in the case of automatic cleaning, no operator regularly inspects the growth and the wafer may continue to be processed even after undesired deposits are formed on the cup, which leads to the loss. Although the operator can enter regularly to check the plating equipment, due to time constraints and various other factors, the operator has limited ability to inspect the growth. So, for example, a visual inspection may only be performed once or twice a day. When performing a visual inspection, many valuable wafers may have been processed under the condition that the bottom of the cup is plated, which results in the loss (or low yield) of these expensive wafers. In view of this difficulty, the automatic detection and cleaning of undesired sediments is particularly valuable.
雖然自動清潔基於本文所述原因而為有利的，但決定清潔的最佳時序/頻率可為困難的。例如，若清潔過於頻繁，則產能可能受到影響，因為電鍍槽在清潔時無法處理基板。另一方面，若清潔不夠頻繁，則許多貴重晶圓可能在惡劣條件下受到處理，其導致該等晶圓的損失或低良率。因此，偵測電鍍設備上不樂見的電鍍之存在係有利的。以此方式，與是否及何時清潔晶圓固持件相關的決定可直接基於晶圓固持件的清潔度。相似地，可在清潔操作之後執行本文所述之偵測方法，以確認清潔操作係成功的。 用於偵測基板固持件上不樂見的金屬沉積物之方法及設備Although automatic cleaning is advantageous for the reasons described herein, determining the optimal timing / frequency of cleaning can be difficult. For example, if cleaning is too frequent, productivity may be affected because the plating bath cannot handle the substrate while cleaning. On the other hand, if cleaning is not frequent enough, many valuable wafers may be processed under harsh conditions, which results in the loss of such wafers or low yields. Therefore, it is advantageous to detect the presence of undesirable plating on plating equipment. In this way, the decision regarding whether and when to clean the wafer holder can be directly based on the cleanliness of the wafer holder. Similarly, the detection methods described herein can be performed after the cleaning operation to confirm that the cleaning operation was successful. Method and equipment for detecting undesired metal deposits on substrate holder
本文之某些實施例提供偵測基板固持件上是否存在及存在何種程度的殘餘金屬沉積物之方法。可在清潔操作之同時、或緊接之前、或緊接之後執行該等方法，儘管其可在沒有進行電鍍之任何時候執行。在某些情況下，每次進行自動清潔處理時，即執行偵測方法(例如，在清潔處理之前俾引起清潔處理、及/或在清潔處理之後俾確認清潔操作係成功的)。在其他情況下，更頻繁地或更不頻繁地執行偵測方法。例如，可在電沉積處理期間各晶圓經處理之後、某數目的晶圓經處理之後、某電荷量(例如，以庫侖量測)經轉移之後、或者電沉積處理期間某總量或厚度的薄膜經沉積之後進行偵測。Certain embodiments herein provide a method for detecting the presence and extent of residual metal deposits on a substrate holder. These methods may be performed at the same time as, or immediately before, or immediately after the cleaning operation, although they may be performed at any time when no plating is performed. In some cases, each time an automatic cleaning process is performed, a detection method is performed (for example, causing the cleaning process before the cleaning process, and / or confirming that the cleaning operation is successful after the cleaning process). In other cases, detection methods are performed more or less frequently. For example, after each wafer is processed during the electrodeposition process, after a certain number of wafers are processed, after a certain amount of charge (e.g., measured in Coulombs) is transferred, or during a certain amount or thickness of the electrodeposition process, Detection is performed after the film is deposited.
圖2A顯示電鍍感測器201裝設於其上之電鍍槽200的頂部。圖2B顯示圖2A所示之杯件202的近視橫剖面圖，其包含底表面203、內壁204、及唇形密封205。圖2A中，標示為2B的點狀圓凸顯圖2B所描繪之設備的部分。圖2C顯示杯件202的近視前視圖，其顯示電性接點210。在電鍍期間，晶圓係以面朝下之方向被支持於杯件202中。杯件202的位置係由揚升機構所控制，該揚升機構使杯件202與基板相對於電鍍槽200中所含之電解液而升起及降低。電鍍槽200包含滴液屏蔽件207，其在頂部及底部係開放的。在將晶圓裝載於杯件202中之後，揚升機構在將晶圓浸入電解液之前使杯件202降低通過滴液屏蔽件207。在此範例中，電鍍感測器201係裝設於滴液屏蔽件207之壁部上。電鍍感測器201的視線係標示為218。FIG. 2A shows the top of a plating tank 200 on which a plating sensor 201 is mounted. FIG. 2B is a close-up cross-sectional view of the cup 202 shown in FIG. 2A, which includes a bottom surface 203, an inner wall 204, and a lip seal 205. In FIG. 2A, the dotted circle labeled 2B highlights parts of the device depicted in FIG. 2B. FIG. 2C shows a close-up front view of the cup 202, which shows the electrical contacts 210. During plating, the wafer is supported in the cup 202 in a face-down direction. The position of the cup 202 is controlled by a lifting mechanism, which raises and lowers the cup 202 and the substrate relative to the electrolyte contained in the plating tank 200. The plating tank 200 includes a drip shield 207 that is open at the top and bottom. After the wafer is loaded in the cup 202, the lifting mechanism lowers the cup 202 through the drip shield 207 before immersing the wafer in the electrolyte. In this example, the plating sensor 201 is mounted on a wall portion of the drip shield 207. The line of sight of the plating sensor 201 is labeled 218.
此種定位由於一些原因而為有利的。例如，由於電鍍感測器201係裝設於滴液屏蔽件207上，其受到屏蔽而免於電鍍化學物的影響。此化學物可能影響光學感測器的光學元件，導致低品質(例如，不可重複的)的量測。此外，暴露於此化學物可能使感測器的壽命縮短。因此，藉由從電鍍化學物附近移開電鍍感測器201，可最小化或避免該等化學物相關問題。在一些情況下，滴液屏蔽件207可提供電鍍感測器201與電鍍化學物之間的暫時或永久的實體阻障。針對暫時的實體阻障，可使用光閘。當進行電鍍時、及在不使用電鍍感測器的其他時候，可將光閘維持關閉。針對永久的實體阻障，滴液屏蔽件207可包含一窗部，電鍍感測器201透過該窗部而進行量測。在一些其他情況下，滴液屏蔽件207可包含一切口，電鍍感測器201透過該切口而進行量測，其中該切口不提供電鍍感測器201與電鍍化學物之間的任何實體阻障。電鍍感測器201與電鍍化學物之間所提供的距離可足以達成上述優點，但實體阻障/窗部之使用可加強該等優點。This positioning is advantageous for a number of reasons. For example, since the plating sensor 201 is mounted on the drip shield 207, it is shielded from plating chemicals. This chemical may affect the optical elements of the optical sensor, resulting in a low-quality (eg, non-repeatable) measurement. In addition, exposure to this chemical may shorten the life of the sensor. Therefore, by removing the plating sensor 201 from near the plating chemicals, the problems related to these chemicals can be minimized or avoided. In some cases, the drip shield 207 may provide a temporary or permanent physical barrier between the plating sensor 201 and the plating chemistry. For temporary physical barriers, shutters can be used. The shutter can be kept closed when plating is performed, and other times when no plating sensor is used. For permanent physical barriers, the drip shield 207 may include a window through which the galvanic sensor 201 measures. In some other cases, the drip shield 207 may include all openings through which the electroplated sensor 201 is measured, wherein the cutout does not provide any physical barrier between the electroplated sensor 201 and the electroplating chemicals . The distance provided between the plating sensor 201 and the plating chemicals may be sufficient to achieve the above advantages, but the use of a physical barrier / window may enhance these advantages.
在一些實施例中，可採取某些額外步驟以降低電鍍化學物汙染電鍍感測器的可能性。在一些情況下，當更容易受到汙染時(例如，當進行偵測時、或當基板固持件從電鍍溶液升起時)可使氣體流過電鍍感測器。在該等或其他情況下，電鍍感測器(或其一部份，例如透鏡)可包含疏水及/或抗氧化塗層。該等步驟可進一步保護電鍍感測器，以延長其使用壽命。In some embodiments, certain additional steps may be taken to reduce the possibility of plating chemicals contaminating the plating sensor. In some cases, gas may flow through the plating sensor when it is more susceptible to contamination (eg, when a detection is performed, or when the substrate holder is raised from the plating solution). In these or other cases, a galvanic sensor (or a portion thereof, such as a lens) may include a hydrophobic and / or oxidation resistant coating. These steps can further protect the plated sensor to extend its life.
將電鍍感測器201置於滴液屏蔽件207上的另一優點為：與置於其所偵測之沉積物附近的電鍍感測器相比(例如，在杯件下方從短距離偵測杯件底表面上之不樂見沉積物的電鍍感測器、或從短距離偵測杯件上任何位置的不樂見沉積物之位在擺臂上的電鍍感測器，如2014年02月12日提交的美國專利申請案第14/178,804號中所述，且上述藉由參照方式引入)，此佈置達成電鍍感測器201之相對深的聚焦深度。如圖2A所示，電鍍感測器201偵測位於跨過電鍍槽、與電鍍感測器201相對的沉澱物。電鍍槽相對大的直徑導致電鍍感測器201之相對大的聚焦深度。藉由使肇因於晶圓固持設備之偏心率的信號損耗減少，較深的聚焦深度使量測品質增加(例如，更加可重複的)。在一些情況下，可將電鍍感測器201置於設備的另一部分，以使其位於圖2A所示之相似位置。滴液屏蔽件本身並非必需、但在某些實施例中為電鍍感測器提供了方便的附著點。Another advantage of placing the plated sensor 201 on the drip shield 207 is that it is compared to a plated sensor placed near the deposit it detects (e.g., detected from a short distance below the cup) Plated sensor for undesired deposits on the bottom surface of the cup, or plated sensor on the swing arm to detect undesired deposits at any position on the cup from a short distance, such as 2014 02 As described in US Patent Application No. 14 / 178,804, filed on May 12, and the above is incorporated by reference), this arrangement achieves a relatively deep focus depth of the plating sensor 201. As shown in FIG. 2A, the plating sensor 201 detects a deposit located across the plating tank and opposite to the plating sensor 201. The relatively large diameter of the plating bath results in a relatively large depth of focus of the plating sensor 201. By reducing the signal loss due to the eccentricity of the wafer holding equipment, the deeper focus depth increases the measurement quality (for example, more repeatable). In some cases, the plating sensor 201 may be placed in another part of the device so that it is located in a similar position as shown in FIG. 2A. The drip shield itself is not necessary, but in some embodiments provides a convenient attachment point for a galvanic sensor.
在某些情況下，電鍍感測器與其感測的區域(通常在與電鍍感測器相對的唇形密封上，如下進一步說明)之間的距離為至少約200 mm、或至少約250 mm、或至少約300 mm、或至少約400 mm、或至少約450 mm。此距離可大致與被電鍍之晶圓的直徑相符。在以水平方向電鍍基板的許多情況下，電鍍感測器橫跨電鍍槽直徑而感測，以使感測器射束係相較於垂直而實質上更為水平的(例如，約水平之30度內)。In some cases, the distance between the galvanic sensor and the area it senses (typically on a lip seal opposite the galvanic sensor, as described further below) is at least about 200 mm, or at least about 250 mm, Or at least about 300 mm, or at least about 400 mm, or at least about 450 mm. This distance may approximately correspond to the diameter of the plated wafer. In many cases where a substrate is plated in a horizontal direction, a plated sensor senses across the diameter of the plating bath so that the sensor beam is substantially more horizontal than vertical (e.g., about 30 Within degrees).
可使用一些不同類型的電鍍感測器。範例電鍍感測器包含(但不限於)色彩為基的感測器、強度為基的感測器、視覺為基的照相機/感測器(其可與影像識別/分類方法結合使用，以偵測不樂見之沉澱物)、及其任何組合。電鍍感測器可為數位、類比、或其一些組合。在一特定範例中，電鍍感測器包含(1)用於照射感測器目標區域的光學元件、以及(2)用於收集來自經照射感測器目標區域的信號的光學元件。Several different types of galvanic sensors can be used. Example plating sensors include, but are not limited to, color-based sensors, intensity-based sensors, and vision-based cameras / sensors (which can be used in conjunction with image recognition / classification methods to detect Unfavorable precipitates), and any combination thereof. Plating sensors can be digital, analog, or some combination thereof. In a specific example, a galvanic sensor includes (1) optical elements for illuminating a target area of the sensor, and (2) optical elements for collecting signals from the irradiated sensor target area.
用於照射感測器目標區域的光學元件通常包含光源，例如發光二極體(LED)、雷射二極體、燈具等。在一些情況下，光纖電纜可用以將來自光源的光導向感測器目標區域上。用於收集來自經照射感測器目標區域的信號的光學元件通常包含光學感測器。光學感測器在受照射時可產生電，例如其中該光學感測器為光伏或光發射感測器。在其他情況下，光學感測器在受照射時可改變電性，例如其中該光學感測器為光電阻器、光導體等。光學感測器之一般範例包含(但不限於)光電、光二極體、光電阻器、光導體、近接光感測器、光伏光感測器、光發射光感測器等。The optical element used to illuminate the target area of the sensor usually includes a light source, such as a light emitting diode (LED), a laser diode, a lamp, and the like. In some cases, fiber optic cables can be used to direct light from a light source onto a sensor target area. The optical elements used to collect signals from the target area of the illuminated sensor typically include an optical sensor. An optical sensor can generate electricity when illuminated, for example, where the optical sensor is a photovoltaic or light emitting sensor. In other cases, the optical sensor can change its electrical properties when irradiated, for example, where the optical sensor is a photoresistor, a photoconductor, or the like. Common examples of optical sensors include, but are not limited to, optoelectronics, photodiodes, photoresistors, light conductors, proximity light sensors, photovoltaic light sensors, light emitting light sensors, and the like.
光學感測器所對準的區域可稱為感測器目標區域。在許多實施例中，感測器目標區域為唇形密封上的區域及/或杯件之內壁(例如，圖2A的內壁204)上的區域。可設計感測器目標區域以提供與不樂見之金屬沉澱物所提供之信號相對比的信號，如下進一步討論。The area where the optical sensor is aligned can be referred to as the sensor target area. In many embodiments, the sensor target area is the area on the lip seal and / or the area on the inner wall of the cup (eg, the inner wall 204 of FIG. 2A). The target area of the sensor can be designed to provide a signal that is compared to the signal provided by the undesired metal deposits, as discussed further below.
可將用於照射感測器目標區域的光學元件與用於收集來自感測器目標區域的信號的光學元件結合於單一元件中、或者其可彼此個別設置。在圖2A、3A、4D、6A、及6B所示之範例中，照射及收集光學元件係在電鍍感測器(元件201、301、401、及601)中一同設置。在一些情況下，圖式中所示之電鍍感測器可包含收集光學元件，而照射光學元件係設置於別處(例如，具有連至感測器目標區域之視線的任何位置)。以下係有利的：為上述理由而使收集光學元件(在一些情況下，以及照射光學元件)被安置相對遠離感測器目標區域。The optical element for illuminating the target area of the sensor and the optical element for collecting signals from the target area of the sensor may be combined in a single element, or they may be provided separately from each other. In the examples shown in FIGS. 2A, 3A, 4D, 6A, and 6B, the irradiation and collection optical elements are provided together in the plating sensors (elements 201, 301, 401, and 601). In some cases, the electroplated sensor shown in the drawings may include a collection optical element, and the illuminating optical element is disposed elsewhere (for example, any position having a line of sight connected to a target area of the sensor). It is advantageous that the collection optics (and in some cases, the illumination optics) be placed relatively far away from the sensor target area for the reasons described above.
在一實施例中，電鍍感測器為小點尺寸之對比感測器。此類感測器基於在照射設備之各區域時所接收的信號強度，而區分存在與不存在不樂見之沉澱物的設備區域。在一實施例中，唇形密封及/或杯件之內壁上的感測器目標區域可為白色(或淺色)，以使其在受照射時提供相對強的信號至對比感測器。相反地，不樂見之金屬沉澱物傾向為深色的、且在受照射時提供相對較弱的信號至對比感測器。可識別一閾值信號以區分存在不樂見之金屬沉澱物的區域、與不存在不樂見之沉澱物的區域。使感測器目標區域乾燥In one embodiment, the galvanic sensor is a small dot size contrast sensor. This type of sensor distinguishes between areas of the device with and without undesired deposits based on the strength of the signal received while illuminating various areas of the device. In an embodiment, the target area of the sensor on the inner wall of the lip seal and / or the cup may be white (or light-colored), so that it provides a relatively strong signal to the contrast sensor when illuminated. . Conversely, undesirable metal deposits tend to be dark and provide a relatively weak signal to the contrast sensor when illuminated. A threshold signal can be identified to distinguish between areas where undesired metal deposits are present and areas where there are no unpopular deposits.That thesensor target area sulfate
在基板上電鍍之後，濕氣通常在基板固持件之唇形密封與杯件上存留約30分鐘。此濕氣可能影響量測之品質/可重複性。為了在不等候設備變乾之情況下獲得高品質量測，可設置乾燥器以迅速從感測器目標區域(及需要乾燥的任何其他區域)移除濕氣。可將乾燥器併入清潔組件(例如，清潔手臂上，該清潔手臂擺動到位以清潔唇形密封/杯件)、或設置於個別機構上(其可被設置於相似於清潔手臂之擺臂上、或另一件硬體上)。在許多實施例中，乾燥器包含用於將氣體(例如N2、惰性氣體、空氣等)朝向感測器目標區域輸送的噴嘴及供應線。在一些情況下，除了唇形密封及/或杯件內壁之外，乾燥器還可使杯件底部乾燥。After plating on the substrate, moisture usually remains on the lip seal of the substrate holder and the cup for about 30 minutes. This moisture may affect the quality / reproducibility of the measurement. In order to obtain high-quality measurements without waiting for the equipment to dry, a dryer can be set up to quickly remove moisture from the target area of the sensor (and any other areas that need to be dried). The dryer can be incorporated into a cleaning assembly (e.g., on a cleaning arm that swings into place to clean the lip seal / cup), or be placed on a separate mechanism (which can be placed on a swing arm similar to the cleaning arm , Or another piece of hardware). In many embodiments, the dryer comprising a means for a gas (e.g. N2, an inert gas, such as air) supply line towards the nozzle and the target area of the sensor delivery. In some cases, in addition to the lip seal and / or the inner wall of the cup, the dryer can dry the bottom of the cup.
圖3A顯示帶有電鍍感測器301裝設於滴液屏蔽件307上的電鍍槽300之一部分，其中將乾燥器313併入清潔組件311。電鍍感測器301之視線係標示為318。圖3A中，杯件302係顯示於清潔位置中(例如，降低至滴液屏蔽件307內、電解液上方，以使清潔手臂可在杯件302下方行進而不會浸入電解液中)，其可與乾燥位置相同。清潔組件311包含擺臂312，其在圖3B中較清楚地顯示。在此範例中，清潔組件311之擺臂312包含清潔頭314、氣體管線315、及噴嘴316。氣體管線315及噴嘴316形成乾燥器313。在一些情況下，可在擺臂312上設置額外的流體管線及噴嘴以輸送清潔流體。在一相似範例中，清潔頭314係設置於第一擺臂上，而乾燥器313係設置於第二擺臂上(未顯示)。擺臂可相對於杯件而移動，因而容許擺臂沿整個杯件清潔及/或乾燥。在一實施例中，杯件在擺臂維持靜止時轉動。在另一實施例中，在擺臂轉動以使其環繞整個杯件時，杯件維持靜止。在另一實施例中，使用該等移動之組合。FIG. 3A shows a part of a plating tank 300 with a plating sensor 301 mounted on a drip shield 307, in which a dryer 313 is incorporated into the cleaning assembly 311. The sight line of the electroplated sensor 301 is marked as 318. In FIG. 3A, the cup member 302 is shown in a cleaning position (for example, lowered into the drip shield 307 and above the electrolyte so that the cleaning arm can travel under the cup member 302 without immersion in the electrolyte) Can be the same as the dry position. The cleaning assembly 311 includes a swing arm 312, which is shown more clearly in Figure 3B. In this example, the swing arm 312 of the cleaning assembly 311 includes a cleaning head 314, a gas line 315, and a nozzle 316. The gas line 315 and the nozzle 316 form a dryer 313. In some cases, additional fluid lines and nozzles may be provided on the swing arm 312 to convey cleaning fluid. In a similar example, the cleaning head 314 is disposed on the first swing arm, and the dryer 313 is disposed on the second swing arm (not shown). The swing arm can be moved relative to the cup, thus allowing the swing arm to be cleaned and / or dried along the entire cup. In one embodiment, the cup is rotated while the swing arm remains stationary. In another embodiment, the cup member remains stationary while the swing arm is rotated to surround the entire cup member. In another embodiment, a combination of these moves is used.
在一些情況下，使感測器目標區域乾燥對於晶圓上所執行的後續電鍍處理可能具有有害作用。在如此情況下，乾燥/偵測之後所電鍍的第一片晶圓可能受到「第一片晶圓」作用的影響，相比於後續所處理之晶圓，該作用引起實質上不均勻性。由於在第一片晶圓處理期間設備之相關區域再次變濕，故後續所處理之晶圓相比於第一片晶圓而經歷不同的電鍍條件。僅需藉由在偵測操作後處理第一片晶圓之前再潤濕感測器目標區域(及需要潤濕的任何其他區域)，可將第一片晶圓作用消除。在一些情況下，清潔組件可用以再潤濕設備。在其他情況下，可為此目的而設置單獨的流體管線/噴嘴。電鍍感測器之對準In some cases, drying the sensor target area may have a deleterious effect on subsequent plating processes performed on the wafer. In this case, the first wafer plated after drying / detection may be affected by the "first wafer" effect, which causes substantial non-uniformity compared to subsequent processed wafers. Since the relevant area of the device gets wet again during the first wafer processing, the subsequent processed wafers experience different plating conditions compared to the first wafer. Simply by wetting the sensor target area (and any other areas that need to be wetted) before processing the first wafer after the detection operation, the first wafer effect can be eliminated. In some cases, a cleaning assembly can be used to re-wet the device. In other cases, a separate fluid line / nozzle may be provided for this purpose.Plating sensor alignment
可將電鍍感測器對準以使其在偵測之前聚焦於感測器目標區域上。可在裝設電鍍感測器時第一次使其對準，並接著在每次使用時重新對準。可完成初始對準以將電鍍感測器定位於滴液屏蔽件上，並可完成後續對準以將基板固持件揚升機構定位俾使感測器目標區域與電鍍感測器對準。The plated sensor can be aligned so that it focuses on the target area of the sensor before detection. The electroplated sensor can be aligned for the first time when it is installed, and then realigned each time it is used. Initial alignment can be completed to position the plating sensor on the drip shield, and subsequent alignment can be completed to position the substrate holder lifting mechanism so that the target area of the sensor is aligned with the plating sensor.
在一特定範例中，可使用可調整裝設硬體以將電鍍感測器裝設於滴液屏蔽件上，該可調整裝設硬體容許電鍍感測器與滴液屏蔽件之間的相對移動。此硬體之範例包含螺釘、桿件、卡扣、緊固件等。在一實施例中，使用一或更多螺釘將電鍍感測器裝設於滴液屏蔽件上，該一或更多螺釘控制滴液屏蔽件上之電鍍感測器的相對垂直位置。透過在一方向或另一方向上轉動螺釘，電鍍感測器在滴液屏蔽件上向上或向下移動。在該等或其他實施例中，可使用一或更多螺釘將電鍍感測器裝設於滴液屏蔽件上，該一或更多螺釘控制滴液屏蔽件上之電鍍感測器的相對水平/圓周位置。透過在一方向或另一方向上轉動螺釘，電鍍感測器在滴液屏蔽件周圍向左或向右移動。可使用任何可調整附著硬體。可將電鍍感測器定位以透過滴液屏蔽件中的切口或窗部進行感測。在將電鍍感測器適當地定位於滴液屏蔽件上之後，另一件硬體(例如，控制基板固持件位置的揚升機構)可用以在處理期間每次該等元件須對準時將電鍍感測器與感測器目標區域對準。In a specific example, an adjustable mounting hardware may be used to mount the plating sensor on the drip shield, the adjustable mounting hardware allows the relative between the plating sensor and the drip shield mobile. Examples of this hardware include screws, rods, buckles, fasteners, and so on. In one embodiment, one or more screws are used to mount the plating sensor on the drip shield, and the one or more screws control the relative vertical position of the plating sensor on the drip shield. By turning the screw in one direction or the other, the galvanic sensor moves up or down on the drip shield. In these or other embodiments, one or more screws can be used to mount the plating sensor on the drip shield, the one or more screws controlling the relative level of the plating sensor on the drip shield / Circle position. By turning the screw in one direction or the other, the galvanic sensor moves left or right around the drip shield. Any adjustable attachment hardware can be used. The galvanic sensor can be positioned to sense through a cutout or window in the drip shield. After the plating sensor is properly positioned on the drip shield, another piece of hardware (e.g., a lifting mechanism that controls the position of the substrate holder) can be used to plate the plating each time these components must be aligned during processing The sensor is aligned with the target area of the sensor.
如上所提及，在一些情況下，感測器目標區域為唇形密封上的區域及/或杯件之內壁上的區域。在一特定範例中，感測器目標區域係在唇形密封上、且具有相當於或小於唇形密封高度的高度。在另一實施例中，感測器目標區域係在杯件之內壁上、且具有相當於或小於杯件內壁高度的高度。在又另一實施例中，感測器目標區域係在唇形密封及杯件內壁兩者上、且具有相當於或小於唇形密封及杯件內壁之組合高度的高度。使用小的感測器目標區域使得所收集資料中的背景雜訊最小化。As mentioned above, in some cases, the sensor target area is the area on the lip seal and / or the area on the inner wall of the cup. In a specific example, the sensor target area is on the lip seal and has a height equal to or less than the height of the lip seal. In another embodiment, the sensor target area is on the inner wall of the cup and has a height equal to or less than the height of the inner wall of the cup. In yet another embodiment, the sensor target area is on both the lip seal and the inner wall of the cup, and has a height equal to or less than the combined height of the lip seal and the inner wall of the cup. Using small sensor target areas minimizes background noise in the collected data.
圖4A-4D描繪具有切口421的對準器具420。圖4A顯示對準器具420的前視圖，圖4B顯示對準器具420的側視圖，圖4C描繪裝設於杯件402上之對準器具420的側視圖，以及圖4D顯示裝設於杯件402上、與電鍍感測器401相對的對準器具420之俯視圖。電鍍感測器401之視線係標示為418。對準器具420係定位於杯件402上，以使切口421與來自電鍍感測器401的視線418對準，如圖4C所示。切口421的位置決定感測器目標區域的位置。例如，若期望感測器目標區域在杯件402的唇形密封上，則可將切口421定位於相對較高處，而若期望感測器目標區域在杯件402的內壁上，則可將切口421定位於相對較低處(因為杯件的內壁在杯件的唇形密封下方)。4A-4D depict an alignment instrument 420 having a cutout 421. FIG. 4A shows a front view of the alignment device 420, FIG. 4B shows a side view of the alignment device 420, FIG. 4C depicts a side view of the alignment device 420 mounted on the cup 402, and FIG. 4D shows a view of the alignment device A top view of the alignment device 420 on 402 opposite to the plating sensor 401. The sight line of the galvanic sensor 401 is marked as 418. The alignment tool 420 is positioned on the cup 402 so that the cutout 421 is aligned with the line of sight 418 from the plating sensor 401, as shown in FIG. 4C. The position of the cutout 421 determines the position of the sensor target area. For example, if the target area of the sensor is desired to be on the lip seal of the cup 402, the cutout 421 can be positioned relatively high, and if the target area of the sensor is desired to be on the inner wall of the cup 402, The cutout 421 is positioned relatively low (because the inner wall of the cup is below the lip seal of the cup).
在一範例中，可將對準器具固定地裝設於杯件，以使對準器具與杯件不會相對於彼此移動。在如此情況下，對準器具可用以在各偵測處理之初始階段時對準電鍍感測器及感測器目標區域。在此初始對準之後，基板固持件組件的揚升機構在杯件轉動時將杯件維持於期望對準高度。此轉動容許電鍍感測器沿整個唇形密封及/或杯件內壁進行偵測。當杯件轉動時，對準器具與其一同轉動。在另一範例中，可將對準器具裝設於杯件上以使杯件相對於對準器具而移動。例如，杯件可在對準器具下方轉動/滑動。如此情況下，在整個偵測處理過程中，對準器具可維持與電鍍感測器的視線對準，而同時杯件在對準器具下方轉動以使整個唇形密封及/或杯件內壁可由電鍍感測器進行評估。在許多實施例中，對準器具係可移除地裝設於杯件上。可視需求而裝設及移除對準器具。例如，可在設備用於電鍍一或更多基板之後將對準器具裝設於杯件上。對準器具可維持安裝著，直到基板固持件/感測器目標區域與電鍍感測器對準為止、或直到偵測完成之後為止。此時，可將對準器具移除。當處理額外的基板時，可視需求而重複安裝及移除對準器具。藉由可移除地裝設對準器具，可確保對準器具不會干擾電鍍處理。In one example, the alignment device may be fixedly mounted on the cup so that the alignment device and the cup do not move relative to each other. In such a case, the alignment tool can be used to align the electroplated sensor and the sensor target area at the initial stage of each detection process. After this initial alignment, the lifting mechanism of the substrate holder assembly maintains the cup at a desired alignment height when the cup is rotated. This rotation allows the galvanic sensor to detect along the entire lip seal and / or the inner wall of the cup. When the cup rotates, the alignment device rotates with it. In another example, the alignment device may be mounted on the cup to move the cup relative to the alignment device. For example, the cup can be rotated / slid under the alignment appliance. In this case, during the entire detection process, the alignment device can maintain the line of sight with the galvanic sensor, and at the same time, the cup is rotated under the alignment device to make the entire lip seal and / or the inner wall of the cup It can be evaluated by galvanic sensors. In many embodiments, the alignment device is removably mounted on the cup. Install and remove alignment equipment as required. For example, the alignment instrument may be mounted on the cup after the apparatus is used to plate one or more substrates. The alignment tool can remain installed until the substrate holder / sensor target area is aligned with the plated sensor, or until the detection is completed. At this point, the alignment tool can be removed. When processing additional substrates, the alignment fixture can be repeatedly installed and removed as needed. By removably installing the alignment device, it is ensured that the alignment device does not interfere with the plating process.
可設計對準器具，以使其前表面依據對準器具與電鍍感測器對準之部分而提供強對比信號。此對比可包含吸收、反射、散射之差異。在對準器具/基板固持件/感測器目標區域與電鍍感測器適當對準時產生第一信號，而在對準器具/基板固持件/感測器目標區域與電鍍感測器未對準時產生第二信號，其中該第二信號與該第一信號形成對比。在一範例中，對準器具包含在有安裝對準器具時位於電鍍感測器與感測器目標區域之間的視線中的第一部分(例如，具有等於或小於感測器目標區域的高度)，以及定位在垂直高於及/或低於第一部分的第二部分(在一些情況下，圍繞第一部分)，其中第一及第二部分對於電鍍感測器所量測的特性係彼此對比。例如，第一部分可為白色，而第二部分可為黑色(可使用任何可區分的顏色/特性)。或者，對準器具之第一部分可為一切口，其容許電鍍感測器直接在感測器目標區域上感測特性。在對準器具之第一部分為切口的範例中，感測器目標區域(例如，唇形密封及/或杯件內壁)為白色，而對準器具之正面為黑色。亦可使用顏色/特性之其他對比組合。對於圖4A-4C，第一部分可為切口421，而第二部分可為對準器具420之正面的剩餘區域。在一相似範例中，可由一區域(例如，白色區域)取代切口421，該區域係與對準器具之正面的剩餘區域相對比。一般而言，指示對準器具/基板固持件/感測器目標區域與電鍍感測器對準的信號，可為來自對準器具之表面、或來自感測器目標區域之表面的信號。The alignment device can be designed so that its front surface provides a strong contrast signal based on the portion of the alignment device that is aligned with the plated sensor. This comparison can include differences in absorption, reflection, and scattering. The first signal is generated when the alignment device / substrate holder / sensor target area is properly aligned with the plating sensor, and when the alignment device / substrate holder / sensor target area is not aligned with the plating sensor A second signal is generated, wherein the second signal is in contrast to the first signal. In one example, the alignment device includes a first portion of a line of sight between the plated sensor and the sensor target area when the alignment device is installed (e.g., having a height equal to or less than the target area of the sensor) , And a second portion positioned vertically above and / or below the first portion (in some cases, surrounding the first portion), wherein the characteristics measured by the first and second portions for the galvanic sensor are compared with each other. For example, the first part may be white and the second part may be black (any distinguishable color / characteristic may be used). Alternatively, the first part of the alignment instrument may be a mouthpiece that allows the plated sensor to sense characteristics directly on the sensor target area. In the example where the first part of the alignment tool is a cut, the sensor target area (eg, the lip seal and / or the inner wall of the cup) is white, and the front face of the alignment tool is black. Other contrasting combinations of color / characteristics can also be used. For FIGS. 4A-4C, the first portion may be the cutout 421, and the second portion may be the remaining area of the front side of the alignment instrument 420. In a similar example, the cutout 421 may be replaced by an area (eg, a white area), which is compared to the remaining area on the front side of the alignment instrument. Generally speaking, the signal indicating the alignment of the target area of the alignment device / substrate holder / sensor with the plated sensor can be a signal from the surface of the alignment device or the surface of the target area of the sensor.
為了使感測器目標區域與電鍍感測器對準，電鍍感測器在杯件移動通過不同垂直位置時進行一連串的量測。在一些情況下，此可為自動完成的。可使用控制基板固持件組件之垂直位置的揚升機構以移動杯件。接著基於所接收信號的最大(或最小)強度而設定對準位置。在此位置時，電鍍感測器之視線係與對準器具之第一部分對準，其表示電鍍感測器亦係與感測器目標區域垂直地對準。此範例假設電鍍感測器為一對比感測器，然而相似之對準方法可用於其他類型的感測器。在一相似實施例中，杯件可維持靜止，且可調整電鍍感測器之位置以使其視線與對準器具之第一部分對準。In order to align the target area of the sensor with the plating sensor, the plating sensor performs a series of measurements when the cup is moved through different vertical positions. In some cases, this can be done automatically. A lifting mechanism that controls the vertical position of the substrate holder assembly can be used to move the cup. The alignment position is then set based on the maximum (or minimum) strength of the received signal. In this position, the line of sight of the plated sensor is aligned with the first part of the alignment device, which means that the plated sensor is also aligned vertically with the target area of the sensor. This example assumes that the galvanic sensor is a contrast sensor, but similar alignment methods can be used for other types of sensors. In a similar embodiment, the cup can remain stationary and the position of the electroplated sensor can be adjusted so that its line of sight is aligned with the first part of the alignment device.
對準器具可由一些不同材料所製成。在一些情況下，對準器具可由熱塑性材料所製成。範例材料包含(但不限於)聚碳酸酯、丙烯腈-丁二烯-苯乙烯共聚物(ABS)、聚丙烯、聚偏二氟乙烯(PVDF)、聚四氟乙烯(PTFE)、聚對酞酸乙二酯(PET)、聚苯硫醚(PPS)、聚苯碸(PPSF)、含氟彈性體(FKM彈性體)、以及該等材料之摻合物/合金/黏合組件。ABS材料擁有若干種類，包括ABS-M30(其比標準ABS更強)、ABS-ESD7(丙烯腈-丁二烯-苯乙烯共聚物-靜電消散，其為靜電消散材料)等。其他範例熱塑性材料包含Ultem 9085、聚碳酸酯 ISO、聚碳酸酯-ABS摻合物等。在一些實施例中，可透過三維列印技術以製造對準器具。該等技術可涉及製備對準模型之基於電腦的三維模型、加熱列印材料(例如，上述熱塑性材料之任一者)以提升溫度、以及依據三維模型而分配經加熱之列印材料以形成對準器具。範例流程圖The alignment device may be made of a number of different materials. In some cases, the alignment appliance may be made of a thermoplastic material. Example materials include, but are not limited to, polycarbonate, acrylonitrile-butadiene-styrene copolymer (ABS), polypropylene, polyvinylidene fluoride (PVDF), polytetrafluoroethylene (PTFE), polyterephthalate Ethylene glycol (PET), polyphenylene sulfide (PPS), polyphenylene terephthalate (PPSF), fluoroelastomer (FKM elastomer), and blends / alloys / adhesive components of these materials. There are several types of ABS materials, including ABS-M30 (which is stronger than standard ABS), ABS-ESD7 (acrylonitrile-butadiene-styrene copolymer-static dissipative, which is a static dissipative material), etc. Other exemplary thermoplastic materials include Ultem 9085, polycarbonate ISO, polycarbonate-ABS blends, and the like. In some embodiments, three-dimensional printing technology can be used to manufacture the alignment device. These techniques may involve preparing a computer-based 3D model of the alignment model, heating the printing material (e.g., any of the thermoplastic materials described above) to raise the temperature, and distributing the heated printing material to form a pair based on the 3D model. Quasi appliances.Example flowchart
圖5為描繪處理基板並同時定期或間歇偵測基板固持件上存在或不存在不樂見的金屬沉積物之方法的流程圖。該方法開始於操作500，在此驗證電鍍感測器為運作中。驗證可涉及相對於電鍍感測器而移動基板固持件，以使電鍍感測器接收兩種可區分之信號。該等可區分之信號確保電鍍感測器被適當連接且正常工作。在感測器僅能偵測一信號位準之情況下，其可指示感測器電纜未適當連接、或電鍍感測器未正常工作。FIG. 5 is a flowchart depicting a method of processing a substrate and simultaneously or periodically detecting the presence or absence of undesired metal deposits on a substrate holder. The method begins at operation 500 where the electroplated sensor is verified to be operational. Verification may involve moving the substrate holder relative to the plating sensor so that the plating sensor receives two distinguishable signals. These distinguishable signals ensure that the galvanic sensors are properly connected and functioning properly. When the sensor can only detect one signal level, it can indicate that the sensor cable is not properly connected, or the electroplated sensor is not working properly.
圖6A及6B在兩位置上顯示電鍍設備之一部分，該兩位置可用於圖5之操作500中的驗證期間。電鍍設備包含有一電鍍感測器裝設於其上的滴液屏蔽件607。電鍍感測器601之視線係標示為618。在圖6A中，杯件602及電鍍感測器601係在第一相對位置，其中電鍍感測器601之視線通過杯件602下方。在圖6B中，杯件602及電鍍感測器601係在第二相對位置，其中電鍍感測器601之視線撞擊在杯件上的感測器目標區域(例如，唇形密封上及/或杯件內壁上)。電鍍感測器601應量測圖6A及6B所示之兩位置處的可區分之信號。在電鍍感測器為數位對比感測器的範例中，感測器輸出在圖6A之第一相對位置中讀出「開」，而在圖6B之第二相對位置中讀出「開」(或者反之亦然)。6A and 6B show a portion of the plating equipment at two locations that can be used during the verification period in operation 500 of FIG. 5. The plating equipment includes a drip shield 607 on which a plating sensor is mounted. The sight line of the galvanic sensor 601 is marked as 618. In FIG. 6A, the cup member 602 and the plating sensor 601 are in a first relative position, and the sight of the plating sensor 601 passes under the cup member 602. In FIG. 6B, the cup 602 and the plated sensor 601 are in a second relative position, in which the sight of the plated sensor 601 hits the sensor target area on the cup (for example, on the lip seal and / or Cup inner wall). The plating sensor 601 should measure the distinguishable signals at the two positions shown in FIGS. 6A and 6B. In the example where the galvanic sensor is a digital contrast sensor, the sensor output reads "ON" in the first relative position in Fig. 6A, and reads "ON" in the second relative position in Fig. 6B ( Or vice versa).
設備包含對於圖4A-4D而說明的對準器具的一些情況下，圖5之操作500中的驗證可藉由以下方式而完成：藉由相對於電鍍感測器而移動杯件/對準器具以使(1) 在第一相對位置，電鍍感測器之視線通過對準器具上的切口以撞擊在感測器目標區域上，以及(2) 在第二相對位置，電鍍感測器之視線撞擊對準器具在切口以外之區域中的正面、或如圖6A所示而通過杯件下方。以此方式，可驗證電鍍感測器及感測器目標區域係適當對準且運作中。若電鍍感測器無法偵測在第一與第二相對位置所接收的信號之間的差異，則此代表電鍍感測器故障，並應加以檢查、修理、或替換。In some cases where the device includes an alignment instrument as described for FIGS. 4A-4D, verification in operation 500 of FIG. 5 may be accomplished by moving the cup / alignment instrument relative to the galvanic sensor So that (1) in the first relative position, the sight line of the electroplated sensor passes through the cutout on the alignment device to hit the target area of the sensor, and (2) in the second relative position, the sight line of the electroplated sensor The front of the impact alignment tool in an area other than the cut, or under the cup as shown in Figure 6A. In this way, it can be verified that the plated sensor and the sensor target area are properly aligned and in operation. If the plating sensor cannot detect the difference between the signals received at the first and second relative positions, this indicates that the plating sensor is faulty and should be inspected, repaired, or replaced.
在操作500中的驗證之後，在操作501中，將杯件定位於偵測位置，且電鍍感測器透過一次完整旋轉以掃描感測器目標區域來進行基線掃描。使用對準器具的情況下，例如圖4A-4D所述，將杯件定位於偵測位置可涉及上述之對準處理。例如，可將杯件移動至在電鍍感測器達到最大信號的位置，其表示電鍍感測器之視線係與對準器具上的切口對準(且因此與唇形密封及/或杯件內壁上的感測器目標區域對準)。After the verification in operation 500, in operation 501, the cup is positioned at the detection position, and the electroplating sensor performs a baseline scan by scanning the target area of the sensor through one full rotation. In the case of using an alignment device, for example, as shown in FIGS. 4A-4D, positioning the cup at the detection position may involve the above-mentioned alignment process. For example, the cup can be moved to a position where the plated sensor reaches the maximum signal, which means that the line of sight of the plated sensor is aligned with the cutout on the alignment device (and therefore with the lip seal and / or inside the cup The sensor target area on the wall is aligned).
在許多情況下，電鍍感測器係裝設於滴液屏蔽件上、且在量測期間維持實質上靜止。在如此情況下，基板固持件可轉動以使電鍍感測器可沿感測器目標區域的整個長度掃描(例如，沿整個唇形密封及/或杯件內壁)。在一些其他情況下，電鍍感測器在基板固持件維持靜止時可移動，以容許整個感測器目標區域受到掃描。基線掃描對於與未來掃描相比較係有用的。可間歇地執行操作501，例如安裝新的唇形密封或杯件時。In many cases, a galvanic sensor is mounted on a drip shield and remains substantially stationary during the measurement. In this case, the substrate holder can be rotated so that the electroplated sensor can be scanned along the entire length of the target area of the sensor (eg, along the entire lip seal and / or the inner wall of the cup). In some other cases, the galvanic sensor is movable while the substrate holder is stationary to allow the entire sensor target area to be scanned. Baseline scans are useful for comparison with future scans. Operation 501 may be performed intermittently, such as when installing a new lip seal or cup.
在操作503，新的晶圓被裝載、處理、並接著從電鍍設備之電鍍槽移開。在操作505，判定是否開始偵測不樂見之金屬沉積物。在操作505，不需進行偵測的情況下，該方法可重複進行操作503，其中額外的晶圓被裝載、處理、並接著移開。在操作505，需進行偵測的情況下，該方法在操作507繼續進行，其中杯件係定位於乾燥位置，且使感測器目標區域乾燥。控制基板固持件組件之垂直位置的揚升機構可用以控制杯件的位置。依據一實施例，圖3A及3B顯示在乾燥位置的杯件302。在該等範例中，當位在乾燥位置，杯件302係在滴液屏蔽件307之內或下方。使杯件302定位夠高以容許擺臂312在其下方通過。擺臂312包含用以使感測器目標區域乾燥的乾燥器313。乾燥器313可朝感測器目標區域輸送氣流(例如N2、惰性氣體、空氣等)以使此區域乾燥。杯件302相對於乾燥器313而轉動，以使感測器目標區域的整個長度/圓周可被乾燥。At operation 503, a new wafer is loaded, processed, and then removed from the plating tank of the plating equipment. In operation 505, it is determined whether to detect the undesired metal deposits. In operation 505, without detection, the method may repeat operation 503, in which additional wafers are loaded, processed, and then removed. In a case where detection is required in operation 505, the method continues in operation 507, where the cup pieces are positioned in a dry position and the target area of the sensor is dried. The lifting mechanism controlling the vertical position of the substrate holder assembly can be used to control the position of the cup. According to an embodiment, FIGS. 3A and 3B show the cup 302 in a dry position. In these examples, when in the dry position, the cup 302 is inside or below the drip shield 307. The cup 302 is positioned high enough to allow the swing arm 312 to pass below it. The swing arm 312 includes a dryer 313 to dry the target area of the sensor. The dryer 313 may deliver a gas flow (eg, N2 , inert gas, air, etc.) toward a target area of the sensor to dry the area. The cup 302 is rotated relative to the dryer 313 so that the entire length / circumference of the sensor target area can be dried.
回到圖5，該方法在操作509繼續進行，在此驗證電鍍感測器為運作中。在操作509的驗證係相似於在操作500的驗證，且為了簡潔起見，將不重複敘述。接著，在操作511，杯件被定位於偵測位置、並接著相對於電鍍感測器而轉動，同時電鍍感測器用以偵測感測器目標區域中存在或不存在不樂見之金屬沉積物。操作511中將杯件定位於偵測位置係相似於操作501中將杯件定位於偵測位置，且為了簡潔起見，將不重複敘述。同樣地，電鍍感測器與杯件之間的相對轉動在操作511及500中係相似的，將不重複敘述。操作511中之偵測係類似於操作501中之基線掃描偵測，除了可能存在不樂見之金屬沉積物之外。電鍍感測器基於由各區域所接收之信號，而於存在不樂見鍍層的區域與不存在不樂見鍍層的區域之間作區分。Returning to FIG. 5, the method continues at operation 509, where the electroplating sensor is verified to be operational. The verification in operation 509 is similar to the verification in operation 500, and will not be repeated for the sake of brevity. Next, in operation 511, the cup is positioned at the detection position and then rotated relative to the plating sensor, and the plating sensor is used to detect the presence or absence of undesired metal deposits in the target area of the sensor. Thing. Positioning the cup in the detection position in operation 511 is similar to positioning the cup in the detection position in operation 501, and for the sake of brevity, the description will not be repeated. Similarly, the relative rotation between the galvanic sensor and the cup is similar in operations 511 and 500, and will not be described repeatedly. The detection in operation 511 is similar to the baseline scan detection in operation 501, except that there may be undesired metal deposits. Based on the signals received by the regions, the electroplating sensor distinguishes between an area where the undesired plating is present and an area where the undesired plating is not present.
在操作515，判定是否應重複進行偵測。在一些情況下，透過進行第二次掃描以確認偵測結果係有利的。若需重複進行偵測，該方法從操作511開始重複。若不需重複進行偵測，該方法從操作517繼續進行，在此對偵測結果進行分析。在一些情況下，可分析來自電鍍感測器的資料以判定(1) 每個不樂見金屬沉積物的長度及/或最長的不樂見金屬沉積物的長度，及/或(2) 由不樂見金屬沉積物所覆蓋的感測器目標區域之百分比。在操作519中可將該等數值與一規格相比較。該規格可設定不樂見鍍層的容許量之閾值(例如，某長度以下之沉積物係可容許的，及/或某百分比以下之經電鍍的感測器目標區域係可容許的)。該等閾值係特定於每個應用、且在一些情況下可依經驗而決定。在一範例中，閾值最大沉積物長度為約0.5 cm、或約1 cm (沉積物大於此長度即為偏離規格)。在該等或其他範例中，經電鍍的感測器目標區域之閾值百分比可為約10%、或約20% (百分比大於該等數值即為偏離規格)。In operation 515, it is determined whether detection should be repeated. In some cases, it may be advantageous to perform a second scan to confirm the detection result. To repeat the detection, the method is repeated from operation 511. If the detection is not required to be repeated, the method continues from operation 517, and the detection result is analyzed here. In some cases, data from galvanic sensors can be analyzed to determine (1) the length of each unwelcome metal deposit and / or the length of the longest unwelcome metal deposit, and / or (2) The percentage of sensor target areas that are not welcomed by metal deposits. These values may be compared to a specification in operation 519. The specification may set a threshold value for the unacceptable amount of plating (for example, deposits below a certain length are allowable, and / or target areas of plated sensors below a certain percentage are allowable). These thresholds are specific to each application and in some cases can be determined empirically. In one example, the threshold maximum sedimentary length is about 0.5 cm, or about 1 cm (a sediment larger than this length is off specification). In these or other examples, the threshold percentage of the plated sensor target area may be about 10%, or about 20% (a percentage greater than these values is out of specification).
在操作519中結果未在規格內之情況下，此代表過多的不樂見金屬沉積於感測器目標區域上(例如，唇形密封及/或杯件內壁上)。在如此情況下，該方法可從操作523繼續進行，在此進行一些補救行動。許多可能的補救行動包含(但不限於)：(1) 響起警報或通知操作員，(2) 使相關的電鍍槽離線、並暫時防止更多晶圓在其中受處理，(3) 將晶圓重新安排路線至其他可用的電鍍槽，(4) 執行唇形密封及/或杯件內壁之一部分的針對性清潔(例如，使用人工或自動清潔方法)，(5) 執行整個唇形密封及/或杯件內壁的完整清潔(例如，使用人工或自動清潔方法)，(6) 重新掃描感測器目標區域以確認針對性或完整清潔係成功的，(7) 若有需要，更換唇形密封及/或杯件，以及(8) 緊接在偵測不樂見金屬沉積物之前標記及/或檢查經處理之可疑晶圓。In the case where the result is not within the specification in operation 519, this represents excessive unwelcome metal deposition on the sensor target area (eg, the lip seal and / or the inner wall of the cup). In such a case, the method may continue from operation 523 where some remedial action is performed. Many possible remedial actions include (but are not limited to): (1) ringing an alarm or notifying the operator, (2) taking the associated plating bath offline and temporarily preventing more wafers from being processed therein, and (3) bringing the wafer Reroute to other available plating tanks, (4) perform targeted cleaning of the lip seal and / or part of the inner wall of the cup (for example, using manual or automatic cleaning methods), (5) perform the entire lip seal and / Or complete cleaning of the inner wall of the cup (for example, using manual or automatic cleaning methods), (6) rescan the target area of the sensor to confirm that the targeted or complete cleaning was successful, (7) replace the lip if necessary Seals and / or cups, and (8) mark and / or inspect processed suspicious wafers immediately before detection of unfavorable metal deposits.
在操作519中結果在規格內之情況下，偵測結果指示感測器目標區域(例如，唇形密封及/或杯件內壁)仍足夠乾淨。在如此情況下，該方法可從操作521繼續進行，在此將感測器目標區域(及設備的任何其他相關部分)再潤濕。可藉由朝唇形密封及/或杯件內壁輸送流體(例如，水、去離子水、電解液等)以完成此再潤濕操作。此再潤濕操作減少或避免了在包含透過電鍍而變濕的部分之設備上電鍍所產生的第一片晶圓作用。在使設備之相關部分再潤濕之後，該方法在操作503繼續進行，在操作503新的晶圓被裝載、處理、並接著從電鍍設備移開。可將該方法重複任何次數以處理任何數目的基板。In the case where the result is within the specifications in operation 519, the detection result indicates that the target area of the sensor (eg, the lip seal and / or the inner wall of the cup) is still sufficiently clean. In such a case, the method may continue from operation 521, where the sensor target area (and any other relevant parts of the device) is re-wetted. This rewetting operation can be accomplished by delivering a fluid (eg, water, deionized water, electrolyte, etc.) toward the lip seal and / or the inner wall of the cup. This rewetting operation reduces or avoids the effect of the first wafer produced by electroplating on equipment containing portions that become wet through electroplating. After re-wetting the relevant parts of the device, the method continues at operation 503 where new wafers are loaded, processed, and then removed from the plating equipment. This method can be repeated any number of times to process any number of substrates.
在一些實施例中，可省略圖5所示的一些操作。在一範例中，偵測方法僅包含操作511、517、及519。可將剩餘操作以任何組合包含或省略。該等操作可改善該方法，其引致更為可靠的結果及經改善的電鍍條件，但該等操作對於實行所揭示之實施例並非必要的。In some embodiments, some operations shown in FIG. 5 may be omitted. In an example, the detection method only includes operations 511, 517, and 519. The remaining operations can be included or omitted in any combination. These operations can improve the method, which results in more reliable results and improved plating conditions, but they are not necessary to implement the disclosed embodiments.
圖7A及7B提供實驗結果，其中電鍍感測器係用以偵測基板固持件之杯件上的不樂見之金屬沉積物。在此範例中，電鍍感測器為一數位對比感測器。關於圖7A，圖形描繪由位在基板固持件上不同角位置處的電鍍感測器所接收之信號。在此範例中，5V信號表示存在不樂見之金屬沉積物，而0V信號表示不存在不樂見之金屬沉積物。圖7B顯示一圖表，其顯示經掃描10次之特定電鍍設備的量測結果(經不樂見金屬沉積物鍍覆的感測器目標區域之百分比)。在不同掃描之間並未對電鍍設備進行任何改變。重複掃描以判定是否量測為可靠的。如圖7B所示，結果為可靠的，其顯示僅0.15%之標準差。該等結果表明：所揭示之方法可用以可靠地偵測感測器目標區域上不樂見金屬沉積物之存在/不存在/存在程度。Figures 7A and 7B provide experimental results, in which a galvanic sensor is used to detect undesired metal deposits on the cups of the substrate holder. In this example, the galvanic sensor is a digital contrast sensor. Regarding FIG. 7A, the graph depicts signals received by electroplated sensors located at different angular positions on the substrate holder. In this example, a 5V signal indicates the presence of undesired metal deposits, and a 0V signal indicates the absence of undesired metal deposits. FIG. 7B shows a graph showing the measurement results (percentage of the sensor target area plated with undesired metal deposits) of the specific plating equipment scanned 10 times. No changes were made to the plating equipment between scans. Repeat the scan to determine if the measurement is reliable. As shown in Figure 7B, the results are reliable, showing only a standard deviation of 0.15%. These results indicate that the disclosed method can be used to reliably detect the presence / absence / existence of undesired metal deposits on the target area of the sensor.
可將來自電鍍感測器的資料(例如圖7A所示者)與來自旋轉軸編碼器的資訊結合，以使電鍍感測器資料與感測器目標區域之特定部分相關聯。旋轉軸編碼器將角位置(例如，沿基板/杯件)轉變為類比或數位碼，其容許使用者確實地指明基板/基板固持件之特定區域。藉由將電鍍感測器資料與來自旋轉軸編碼器的資訊結合，使用者可確切地判定杯件上問題區域的位置。在一些情況下，此位置特定之資料可用以引起受影響區域的針對性清潔。Data from the plated sensor (such as shown in FIG. 7A) can be combined with information from the rotary axis encoder to associate the plated sensor data with a specific portion of the target area of the sensor. Rotary axis encoders convert angular positions (eg, along a substrate / cup) to analog or digital codes, which allow the user to specify a specific area of the substrate / substrate holder. By combining galvanic sensor data with information from a rotary axis encoder, users can accurately determine the location of problem areas on the cup. In some cases, location-specific information can be used to cause targeted cleaning of the affected area.
此外，可將位置特定之資料與晶圓性能相關聯。在一範例中，位置特定之資料係與晶圓均勻性資料相關聯。此類關聯可用以識別有用之趨勢。在一些情況下，將第一原理模型、機器學習演算法等應用於資料，以預測唇形密封之使用壽命及/或預測何時應保養(例如，清潔、人工清潔、更換等)唇形密封。可將該等模型應用於諸如下述各者之多站電鍍設備中的各電鍍槽。 設備In addition, position-specific data can be correlated with wafer performance. In one example, the position-specific data is associated with wafer uniformity data. Such associations can be used to identify useful trends. In some cases, first-principles models, machine learning algorithms, etc. are applied to the data to predict the service life of the lip seal and / or predict when the lip seal should be maintained (eg, cleaned, manually cleaned, replaced, etc.). These models can be applied to each plating bath in a multi-station plating apparatus such as each of the following. device
本文中所述之方法可藉由任何合適的設備加以執行。合適的設備包含用以完成處理操作之硬體、以及具有用以根據本發明實施例來控制處理操作之指令之系統控制器。例如，在一些實施例中，硬體可包含在處理工具中之一或更多處理站。The methods described herein can be performed by any suitable equipment. Suitable equipment includes hardware to perform processing operations, and a system controller with instructions to control processing operations according to embodiments of the present invention. For example, in some embodiments, the hardware may be included in one or more processing stations in a processing tool.
圖8顯示可實施電鍍之電鍍槽之範例。圖8並未顯示上述之電鍍感測器，然而應理解，可將圖8所示設備修改為包含此等電鍍感測器(例如在裝配於電鍍池803/電鍍池803上方的滴液屏蔽件上)。通常，電鍍設備包含一或更多電鍍槽，在其中進行基板(例如，晶圓)之處理。在圖8中僅顯示一電鍍槽以保持圖面清晰。為了最佳化由下往上的(bottom-up)電鍍，可將添加劑(例如，加速劑、抑制劑及均勻劑)添加至電解液；然而，具有添加劑之電解液可能以非期望之方式與陽極反應。因此，電鍍槽之陽極與陰極區域有時會藉由薄膜分離，俾使不同組成之電鍍溶液可使用在各自的區域中。在陰極區域中之電鍍溶液被稱為陰極電解液；在陽極區域中之電鍍溶液被稱為陽極電解液。可使用一些工程設計以將陽極電解液及陰極電解液導入電鍍設備中。FIG. 8 shows an example of a plating bath in which plating can be performed. FIG. 8 does not show the above-mentioned plating sensor, however, it should be understood that the device shown in FIG. 8 may be modified to include such plating sensors (for example, a drip shield mounted on the plating tank 803 / plating tank 803 on). Generally, electroplating equipment includes one or more electroplating tanks in which processing of a substrate (eg, a wafer) is performed. Only one plating bath is shown in FIG. 8 to keep the drawing clear. In order to optimize bottom-up plating, additives (such as accelerators, inhibitors, and leveling agents) can be added to the electrolyte; however, electrolytes with additives may interact with the electrolyte in an undesired manner. Anode reaction. Therefore, the anode and cathode regions of the plating tank are sometimes separated by a thin film, so that plating solutions of different compositions can be used in their respective regions. The plating solution in the cathode region is called the catholyte; the plating solution in the anode region is called the anolyte. Some engineering designs can be used to introduce anolyte and catholyte into electroplating equipment.
參考圖8，顯示根據一實施例之電鍍設備801之概略橫剖面圖。電鍍池803含有電鍍溶液(具有如本文中所提供之組成)，其係顯示於液位805處。此容器之陰極電解液部分係用以將基板容納於陰極電解液中。晶圓807被浸泡在電鍍溶液中，並且被例如安裝於可旋轉轉軸811上之「蛤殼式」基板固持件809所固持，其使得蛤殼式基板固持件809能與晶圓807一起旋轉。在美國專利第6,156,167號(授予Patton等人)及美國專利第6,800,187號(授予Reid等人)中，詳細地說明了具有適合與本發明一起使用之態樣之蛤殼式電鍍設備之一般說明，在此藉由參照全文引入。Referring to FIG. 8, a schematic cross-sectional view of a plating apparatus 801 according to an embodiment is shown. The plating bath 803 contains a plating solution (having a composition as provided herein), which is shown at the liquid level 805. The catholyte portion of this container is used to contain the substrate in the catholyte. The wafer 807 is immersed in a plating solution and is held by, for example, a “clamshell” substrate holder 809 mounted on a rotatable shaft 811, which enables the clamshell substrate holder 809 to rotate together with the wafer 807. In US Patent No. 6,156,167 (granted to Patton et al.) And US Patent No. 6,800,187 (granted to Reid et al.), A general description of a clamshell electroplating apparatus having aspects suitable for use with the present invention is detailed, This is incorporated herein by reference in its entirety.
陽極813係設置於電鍍池803內之晶圓下方，並藉由膜815與晶圓區域分離，膜815較佳為離子選擇膜。例如，可使用NafionTM陽離子交換膜(CEM)。在陽極膜下方之的區域通常被稱為“陽極室＂。離子選擇陽極膜815容許電鍍槽之陽極區域與陰極區域之間之離子交流，但避免在陽極所產生之微粒進入晶圓附近而污染晶圓。陽極膜亦可用以在電鍍處理期間分散電流，藉此改善電鍍均勻度。在授予Reid 等人之美國專利第6,126,798號及第6,569,299號中，提供了合適的陽極膜之詳細說明，在此將以上兩者藉由參照全文引入。離子交換膜(例如，陽離子交換膜)尤其適合用於該等應用。該等膜通常由離子聚合物材料所製成，例如包含磺酸基團之全氟化共聚物(例如，NafionTM)、磺化的聚醯亞胺、及熟悉此項技藝者所知之適合用於陽離子交換之其它材料。適合的Nafion™膜之選擇性範例包含購自Dupont de Nemours Co.之N324與N424膜。The anode 813 is disposed below the wafer in the plating cell 803 and is separated from the wafer region by a film 815. The film 815 is preferably an ion-selective film. For example, Nafion™ cation exchange membrane (CEM) can be used. The area below the anode membrane is often referred to as the "anode compartment." The ion-selective anode film 815 allows ion exchange between the anode region and the cathode region of the plating tank, but avoids particles generated in the anode from entering the vicinity of the wafer and contaminating the wafer. The anode film can also be used to disperse current during the plating process, thereby improving the uniformity of the plating. A detailed description of suitable anode films is provided in U.S. Patent Nos. 6,126,798 and 6,569,299 to Reid et al., Which are incorporated herein by reference in their entirety. Ion exchange membranes (eg, cation exchange membranes) are particularly suitable for such applications. These membranes are usually made of ionic polymer materials, such as perfluorinated copolymers (e.g., Nafion™ ) containing sulfonic acid groups, sulfonated polyimide, and suitable materials known to those skilled in the art. Other materials for cation exchange. Examples of suitable Nafion ™ membranes include N324 and N424 membranes available from Dupont de Nemours Co.
在電鍍期間，使來自電鍍溶液之離子沉積在基板上。金屬離子必須擴散通過擴散邊界層而進入TSV孔或其它特徵部中。協助擴散之一典型方法為藉由泵817所提供之電鍍溶液之對流。此外，可使用振動攪動或音波攪動構件以及晶圓旋轉。例如，可將振動傳感器808附接至蛤殼式基板固持件809。During plating, ions from the plating solution are deposited on the substrate. Metal ions must diffuse through the diffusion boundary layer into TSV holes or other features. A typical method to assist the diffusion is by convection of the plating solution provided by the pump 817. In addition, vibration agitation or sonic agitation can be used as well as wafer rotation. For example, the vibration sensor 808 may be attached to a clamshell substrate holder 809.
泵817持續地將電鍍溶液提供至電鍍池803。通常，電鍍溶液向上流動通過陽極膜815及擴散板819而流至晶圓807之中央，接著徑向地向外流過晶圓807。亦可自電鍍池803之側邊將電鍍溶液提供至電鍍池之陽極區域中。接著電鍍溶液自電鍍池803溢流至溢流儲槽821。接著電鍍溶液被過濾(未顯示)並返回泵817，完成電鍍溶液之再循環。在電鍍槽之某些組態中，使不同的電解液循環通過其中包含陽極之電鍍槽部分，同時利用部分可滲透膜或離子選擇膜以避免與主電鍍溶液混合。The pump 817 continuously supplies the plating solution to the plating tank 803. Generally, the plating solution flows upward through the anode film 815 and the diffusion plate 819 to the center of the wafer 807, and then flows radially outward through the wafer 807. The plating solution can also be provided from the side of the plating bath 803 into the anode region of the plating bath. Then, the plating solution overflows from the plating tank 803 to the overflow storage tank 821. The plating solution is then filtered (not shown) and returned to the pump 817 to complete the recycling of the plating solution. In some configurations of the plating bath, different electrolytes are circulated through the portion of the plating bath containing the anode, while partially permeable or ion-selective membranes are utilized to avoid mixing with the main plating solution.
參考電極831位於電鍍池803之外側上之分離室833中，分離室833受到來自主電鍍池803之溢流之補充。或者，在一些實施例中，參考電極係儘可能地靠近基板表面，且參考電極室藉由毛細管或其它方法而連接至晶圓基板一側或在晶圓基板正下方。在一些較佳實施例中，設備更包含連接至晶圓周緣之接觸感測導線，接觸感測導線係用以感測在晶圓周緣處之金屬晶種層之電位，但不會將任何電流帶至晶圓。The reference electrode 831 is located in a separation chamber 833 on the outer side of the plating bath 803, and the separation chamber 833 is supplemented by an overflow from the main plating bath 803. Alternatively, in some embodiments, the reference electrode system is as close to the substrate surface as possible, and the reference electrode chamber is connected to one side of the wafer substrate or directly below the wafer substrate by a capillary tube or other methods. In some preferred embodiments, the device further includes contact sensing wires connected to the periphery of the wafer. The contact sensing wires are used to sense the potential of the metal seed layer at the periphery of the wafer, but do not apply any current. Take to wafer.
當需要在受控制的電位下進行電鍍時，通常使用參考電極831。參考電極831可為各種常用類型其中一者，例如汞/硫酸汞、氯化銀、飽和甘汞、或銅金屬。在某些實施例中，除了參考電極外，可使用與晶圓807直接接觸之接觸感測導線，用於更準確的電位量測(未顯示)。When electroplating is required at a controlled potential, a reference electrode 831 is typically used. The reference electrode 831 may be one of various common types, such as mercury / mercury sulfate, silver chloride, saturated calomel, or copper metal. In some embodiments, in addition to the reference electrode, a contact sensing wire in direct contact with the wafer 807 may be used for more accurate potential measurement (not shown).
DC電源835可用以控制流至晶圓807之電流。電源835具有負輸出導線839，負輸出導線839經由一或多個滑環、刷與接觸件(未顯示)而電連接至晶圓807。電源835之正輸出導線841係電連接至位於電鍍池803中之陽極813。電源835、參考電極831、及接觸感測導線(未顯示)可連接至系統控制器847，系統控制器847容許在各種功能中對於提供至電鍍槽元件之電流及電位進行調變。例如，控制器可容許在電位受控及電流受控的狀態下進行電鍍。控制器可包含複數程式指令，該等程式指令明確定義需被施加至各種電鍍槽元件之電流及電壓位準、以及需要改變這些位準之時間。當施加順向電流時，電源835施加偏壓至晶圓807，以具有相對於陽極813之負電位。這使得電流自陽極813流至晶圓807，且在晶圓表面(陰極)上發生電化學還原反應(例如，Cu2++ 2 e-= Cu0)，其造成導電層(例如銅)沉積在晶圓807之表面上。惰性陽極814可安裝在電鍍池803內之晶圓807之下，並藉由膜815而與晶圓區域分隔。The DC power source 835 can be used to control the current flowing to the wafer 807. The power source 835 has a negative output wire 839, which is electrically connected to the wafer 807 via one or more slip rings, brushes, and contacts (not shown). The positive output lead 841 of the power source 835 is electrically connected to the anode 813 located in the plating tank 803. A power source 835, a reference electrode 831, and a contact sensing lead (not shown) may be connected to the system controller 847. The system controller 847 allows the current and potential provided to the plating bath component to be adjusted in various functions. For example, the controller may allow electroplating in a controlled potential and current controlled state. The controller may include a plurality of program instructions that clearly define the current and voltage levels to be applied to various plating cell components, and the time at which these levels need to be changed. When a forward current is applied, the power source 835 applies a bias to the wafer 807 to have a negative potential relative to the anode 813. This causes current to flow from the anode 813 to the wafer 807, and the electrochemical reduction reaction(e.g., Cu 2+ + 2 e - = Cu 0) occurs on the wafer surface (cathode), which results in a conductive layer (e.g. copper) is deposited On the surface of wafer 807. The inert anode 814 may be mounted below the wafer 807 in the plating bath 803 and separated from the wafer area by a film 815.
設備亦可包含加熱器845，用以將電鍍溶液之溫度維持在特定位準。電鍍溶液可用以將熱傳送至電鍍池803之其它元件。例如，當晶圓807被載入電鍍池中時，可開啟加熱器845及泵817，以使電鍍溶液在電鍍設備801中循環，直到整個設備801之溫度變為實質均勻的。在一實施例中，加熱器845係連接至系統控制器847。系統控制器847可連接至熱電偶以接收在電鍍設備501中之電鍍溶液之溫度反饋，並且判斷是否需要額外加熱。The apparatus may also include a heater 845 to maintain the temperature of the plating solution at a specific level. The plating solution can be used to transfer heat to other components of the plating bath 803. For example, when the wafer 807 is loaded into the plating bath, the heater 845 and the pump 817 may be turned on to circulate the plating solution in the plating equipment 801 until the temperature of the entire equipment 801 becomes substantially uniform. In one embodiment, the heater 845 is connected to the system controller 847. The system controller 847 may be connected to a thermocouple to receive temperature feedback of the plating solution in the plating equipment 501 and determine whether additional heating is required.
控制器通常包括一或更多記憶體裝置及一或更多處理器。處理器可包括CPU或電腦、類比及/或數位輸入/輸出連接件、步進馬達控制器板、等等。在某些實施例中，控制器控制電鍍設備之所有活動。非暫態機器可讀媒體可耦接至系統控制器，該非暫態機器可讀媒體包括用以根據本案實施例而控制處理操作之指令。The controller typically includes one or more memory devices and one or more processors. The processor may include a CPU or computer, analog and / or digital input / output connections, a stepper motor controller board, and so on. In some embodiments, the controller controls all activities of the plating equipment. A non-transitory machine-readable medium may be coupled to the system controller. The non-transitory machine-readable medium includes instructions for controlling processing operations according to an embodiment of the present invention.
通常會存在與控制器847相關的使用者介面。該使用者介面可包含顯示螢幕、設備及/或處理條件的圖形軟體顯示、以及使用者輸入裝置，例如指向裝置、鍵盤、觸控螢幕、傳聲器等。用以控制電鍍處理之電腦程式碼可以任何習用電腦可讀取程式語言寫入：例如，組合語言、C、C++、Pascal、Fortran或其他。藉由處理器執行編譯目的碼或指令碼以執行程式中所識別之工作。依據本文實施例而可使用之電鍍設備的一範例為蘭姆研究公司的Sabre工具。可在形成較大電沉積設備之元件中執行電沉積。A user interface associated with the controller 847 typically exists. The user interface may include a display screen, a graphic software display of equipment and / or processing conditions, and a user input device such as a pointing device, a keyboard, a touch screen, a microphone, and the like. The computer code used to control the plating process can be written in any conventional computer-readable programming language: for example, combined language, C, C ++, Pascal, Fortran, or others. The processor executes the compiled object code or instruction code to perform the tasks identified in the program. An example of electroplating equipment that can be used in accordance with the embodiments herein is the Labre Research Sabre tool. Electrodeposition can be performed in elements forming larger electrodeposition equipment.
圖9顯示範例電沉積設備的概要俯視圖。電沉積設備900可包括三個分離的電鍍模組902、904與906。電沉積設備900亦可包括設置用於各種處理操作的三個分離模組912、914與916。例如，在某些實施例中，模組912、914與916中的一或更多者可為旋轉潤濕乾燥(spin rinse drying，SRD)模組。其他實施例中，模組912、914與916中的一或更多者可為電填充後模組(Post-electrofill module, PEM)，每一模組係設置為運行一功能，例如邊緣斜角移除、背側蝕刻、以及在基板由電鍍模組902、904與906之其中一者處理後的基板酸性清潔。FIG. 9 shows a schematic top view of an example electrodeposition apparatus. The electrodeposition apparatus 900 may include three separate plating modules 902, 904, and 906. The electrodeposition apparatus 900 may also include three separate modules 912, 914, and 916 provided for various processing operations. For example, in some embodiments, one or more of the modules 912, 914, and 916 may be spin rinse drying (SRD) modules. In other embodiments, one or more of the modules 912, 914, and 916 may be post-electrofill modules (PEM). Each module is configured to run a function, such as an edge bevel. The substrate is removed, backside etched, and acid cleaned after the substrate is processed by one of the plating modules 902, 904, and 906.
電沉積設備900包括中央電沉積腔室924。中央電沉積腔室924係容納化學溶液的腔室，其中該化學溶液在電鍍模組902、904與906中用作電鍍溶液。電沉積設備900亦包括可儲存及輸送用於電鍍溶液之添加物的給劑系統926。化學稀釋模組922可儲存並混合化學物以作為蝕刻劑。過濾及泵浦單元928可過濾電鍍溶液以供中央電沉積腔室924之用並將電鍍溶液泵入電鍍模組。The electrodeposition apparatus 900 includes a central electrodeposition chamber 924. The central electrodeposition chamber 924 is a chamber containing a chemical solution, which is used as a plating solution in the plating modules 902, 904, and 906. The electrodeposition apparatus 900 also includes a dosing system 926 that can store and transport additives for the plating solution. The chemical dilution module 922 can store and mix chemicals as an etchant. The filtering and pumping unit 928 may filter the plating solution for use in the central electrodeposition chamber 924 and pump the plating solution into the plating module.
系統控制器930提供電子控制與介面控制，其係操作電沉積模組900所需。系統控制器930(其可包括一或更多實體或邏輯控制器)控制電鍍設備900的部分或全部性能。The system controller 930 provides electronic control and interface control, which are required for operating the electrodeposition module 900. A system controller 930 (which may include one or more physical or logical controllers) controls some or all of the performance of the plating equipment 900.
用於監視該處理的信號可藉由系統控制器930從各處理工具感測器的類比及/或數位輸入連結所提供。用於控制該處理的信號可在處理工具的類比與數位輸出連結上輸出。可受到監視之處理工具感測器的非限定範例包括質量流控制器、壓力感測器(如流體壓力計)、熱電耦、光學位置感測器等。適當的程式化回饋與演算法控制可與來自這些感測器的數據一起使用以維持處理條件。Signals used to monitor the processing may be provided by the system controller 930 from analog and / or digital input links of each processing tool sensor. The signal used to control this processing can be output on the analog and digital output link of the processing tool. Non-limiting examples of process tool sensors that can be monitored include mass flow controllers, pressure sensors (such as fluid pressure gauges), thermocouples, optical position sensors, and the like. Appropriate stylized feedback and algorithmic controls can be used with the data from these sensors to maintain processing conditions.
吊掛工具940可從諸如卡匣942或卡匣944的基板匣中選取基板。卡匣942或944可為前開式晶圓傳送盒(front opening unified pod，FOUP)。FOUP可為封閉體，此封閉體係設計為在受控環境下穩固並安全容置基板，並允許基板被配備有適當裝載埠與機器搬運系統的工具移開，以用於處理或量測。吊掛工具940可使用真空附著或其他附著機構而固持基板。The hanging tool 940 may select a substrate from a substrate cassette such as a cassette 942 or a cassette 944. The cassette 942 or 944 may be a front opening unified pod (FOUP). The FOUP can be a closed body. This closed system is designed to stably and safely contain the substrate in a controlled environment and allow the substrate to be removed by tools equipped with appropriate loading ports and machine handling systems for processing or measurement. The hanging tool 940 may use a vacuum attachment or other attachment mechanism to hold the substrate.
吊掛工具940可接合於晶圓搬運站932、卡匣942或944、傳輸站950或對準器948。透過傳輸站950，吊掛工具946得以取用基板。傳輸站950可為吊掛工具940與946可不經過對準器948而傳遞基板來回的凹槽或位置。然而，在一些實施例中，為確保基板在吊掛工具946上正確對準以精準地傳輸到電鍍模組，吊掛工具946可利用對準器948對準基板。吊掛工具946亦可傳送基板至電鍍模組902、904或906之其中一者，或至設置用於各種處理操作的三個分離模組912、914及916之其中一者。The suspension tool 940 may be coupled to a wafer handling station 932, a cassette 942 or 944, a transfer station 950, or an aligner 948. Through the transfer station 950, the hanging tool 946 can access the substrate. The transfer station 950 may be a groove or position where the hanging tools 940 and 946 may pass the substrate back and forth without passing through the aligner 948. However, in some embodiments, to ensure that the substrate is properly aligned on the hanging tool 946 for accurate transfer to the plating module, the hanging tool 946 can use the aligner 948 to align the substrate. The hanging tool 946 may also transfer the substrate to one of the plating modules 902, 904, or 906, or to one of the three separate modules 912, 914, and 916 provided for various processing operations.
根據上述方法的處理操作範例可如下進行：(1) 在電鍍模組904中將銅或另一材料電沉積至基板上；(2) 在SRD模組912中潤濕並乾燥基板；以及(3)在模組914中執行邊緣斜角移除。An example of a processing operation according to the above method can be performed as follows: (1) electrodeposit copper or another material onto a substrate in a plating module 904; (2) wetting and drying the substrate in an SRD module 912; and (3) ) Perform edge bevel removal in module 914.
配置為在電鍍、潤濕、乾燥與PEM之連續處理操作的整個期間提供高效基板循環的設備可有益於在製造環境中所使用的實施方式。為達此目的，可將模組912配置為旋轉潤濕乾燥及邊緣斜角移除(edge bevel removal, EBR)腔室。藉由此模組912，基板僅需在電鍍模組904與模組912之間傳遞以用於銅電鍍及EBR操作。在一些實施例中，本文所述方法會在包含電鍍設備及步進機之系統中實施。Equipment configured to provide efficient substrate circulation throughout the continuous processing operations of electroplating, wetting, drying, and PEM may benefit embodiments used in a manufacturing environment. To achieve this, the module 912 can be configured as a spin wetting and drying and edge bevel removal (EBR) chamber. With this module 912, the substrate only needs to be transferred between the plating module 904 and the module 912 for copper plating and EBR operations. In some embodiments, the methods described herein are implemented in a system that includes electroplating equipment and a stepper.
電沉積設備1000之另一實施例係概要地圖示於圖10中。在此實施例中，電沉積設備1000具有一套電鍍槽1007，其以成對或多個「二重」配置各自包含電鍍池。除了電鍍本身，電沉積設備1000可執行各種其他電鍍相關處理及子步驟，例如旋轉潤濕、旋轉乾燥、金屬及矽的濕式蝕刻、無電沉積、前潤濕及前化學處理、還原、退火、光阻剝除及表面前置活化。電沉積設備1000以俯視方式概要顯示於圖10，且在該圖中僅揭示單一階層或「樓層」，但其可易於由熟悉本技術領域者理解到：此等設備(例如Novellus SabreTM3D 工具 )可具有二或更多互相層疊其上的階層，每一階層可能具有相同或不同類型的處理站。Another embodiment of the electrodeposition apparatus 1000 is schematically illustrated in FIG. 10. In this embodiment, the electrodeposition apparatus 1000 has a set of electroplating tanks 1007, each of which contains a plating cell in a pair or multiple "dual" configuration. In addition to electroplating itself, the electrodeposition equipment 1000 can perform various other electroplating related processes and sub-steps, such as spin wetting, spin drying, wet etching of metals and silicon, electroless deposition, pre-wetting and pre-chemical treatment, reduction, annealing, Photoresist stripping and surface pre-activation. The electrodeposition apparatus 1000 is schematically shown in a top view in FIG. 10, and only a single level or "floor" is disclosed in the figure, but it can be easily understood by those skilled in the art: such devices (such as Novellus SabreTM 3D tools ) May have two or more levels stacked on top of each other, and each level may have the same or different types of processing stations.
再次參照圖10，此範例中，受到電鍍的基板1006通常可透過前端負載FOUP 1001而饋送至電沉積設備1000，並經由前端機器人1002從FOUP引領至電沉積設備1000的主要基板處理區域，前端機器人1002可縮回並以多維度移動由轉軸1003所驅動的基板1006從一站至另一可進入的站—此範例中顯示兩前端可取用的站1004以及亦為兩前端可取用的站1008。前端可取用的站1004及1008可包括例如前處理站及SRD站。前端機器人1002之「側邊至側邊」的橫向移動可利用機器人軌道1002a而達成。基板1006之各者可由連接至馬達(未顯示)之轉軸1003所驅動的杯形/錐形組件(未顯示)所固持，且馬達可裝附於固定托座1009。本範例亦顯示四個「二重」電鍍槽1007，共計為8個電鍍槽1007。系統控制器(未顯示)可耦接於電沉積設備1000以控制電沉積設備1000的部分或全部特性。可將系統控制器程式化或配置以執行依據先前本文所述之處理的指令集。系統控制器Referring again to FIG. 10, in this example, the plated substrate 1006 can usually be fed to the electrodeposition equipment 1000 through the front-end load FOUP 1001, and guided from the FOUP to the main substrate processing area of the electrodeposition equipment 1000 via the front-end robot 1002. The front-end robot 1002 can retract and move the substrate 1006 driven by the rotating shaft 1003 from one station to another accessible station in multiple dimensions—this example shows a station 1004 that can be accessed by two front ends and a station 1008 that is also accessible by two front ends. The front-end accessible stations 1004 and 1008 may include, for example, a pre-processing station and an SRD station. The lateral movement of the "side-to-side" of the front-end robot 1002 can be achieved using the robot track 1002a. Each of the substrates 1006 can be held by a cup-shaped / conical assembly (not shown) driven by a rotating shaft 1003 connected to a motor (not shown), and the motor can be attached to the fixed bracket 1009. This example also shows four "dual" plating baths 1007, for a total of eight plating baths 1007. A system controller (not shown) may be coupled to the electrodeposition apparatus 1000 to control some or all characteristics of the electrodeposition apparatus 1000. The system controller can be programmed or configured to execute an instruction set according to the processing previously described herein.System controller
在一些實施例中，控制器為系統的部分，該系統可為上述範例的部分。此類系統可包含半導體處理設備，含一或複數處理工具、一或複數腔室、用於處理的一或複數工作台、及/或特定處理元件(晶圓底座、氣流系統等)。該等系統可與電子裝置整合，以於半導體晶圓或基板之處理前、處理期間、及處理後控制其操作。可將該等電子裝置稱為「控制器」，其可控制一或複數系統的各種元件或子部件。依據處理之需求及/或系統之類型，可將控制器程式化以控制本文中所揭示之處理的任一者，包含處理氣體之輸送、溫度設定(如：加熱及/或冷卻)、壓力設定、真空設定、功率設定、射頻(RF)產生器設定、RF匹配電路設定、頻率設定、流動速率設定、流體輸送設定、位置及操作設定、進出工具及連接至特定系統或與特定系統介面接合的其他傳送工具及/或負載鎖之晶圓傳送。在特定範例中，系統控制器控制基板固持件的位置。系統控制器可視情況而指示揚升機構將基板固持件定位於電鍍位置、清潔位置、乾燥位置、及/或偵測位置。系統控制器亦可視需求而指示電鍍感測器進行量測以執行本文所述方法。系統控制器亦可指示設備在由電鍍感測器進行量測之前使感測器目標區域乾燥、及/或在由電鍍感測器進行量測之後及處理新晶圓之前使感測器目標區域再潤濕。In some embodiments, the controller is part of a system, which may be part of the above example. Such systems may include semiconductor processing equipment, including one or more processing tools, one or more chambers, one or more workbenches for processing, and / or specific processing elements (wafer bases, airflow systems, etc.). These systems can be integrated with electronic devices to control the operation of semiconductor wafers or substrates before, during, and after processing. Such electronic devices can be referred to as "controllers", which can control various elements or sub-components of one or more systems. Depending on the needs of the process and / or the type of system, the controller can be programmed to control any of the processes disclosed herein, including the delivery of process gas, temperature settings (such as heating and / or cooling), and pressure settings , Vacuum settings, power settings, radio frequency (RF) generator settings, RF matching circuit settings, frequency settings, flow rate settings, fluid delivery settings, position and operation settings, access tools and connections to specific systems or interfaces with specific systems Wafer transfer with other transfer tools and / or load locks. In a specific example, the system controller controls the position of the substrate holder. The system controller may instruct the lifting mechanism to position the substrate holder at the plating position, the cleaning position, the drying position, and / or the detection position according to the situation. The system controller may also instruct the electroplating sensor to perform measurements to perform the method described herein as required. The system controller may also instruct the device to dry the sensor target area before measurement by the plating sensor, and / or to make the sensor target area after measurement by the plating sensor and before processing a new wafer Wet again.
廣泛而言，可將控制器定義為具有接收指令、發送指令、控制操作、允許清潔操作、允許端點量測等之各種積體電路、邏輯、記憶體、及/或軟體的電子設備。該積體電路可包含儲存程式指令的韌體形式之晶片、數位信號處理器(DSPs)、定義為特殊應用積體電路(ASICs)之晶片、及/或執行程式指令(如軟體)之一或更多的微處理器或微控制器。程式指令可為以各種個別設定(或程式檔案)之形式傳送到控制器的指令，其定義用以在半導體晶圓上、或針對半導體晶圓、或對系統執行特定處理的操作參數。在一些實施中，該等操作參數可為由製程工程師所定義之配方的部分，該配方係用以在基板之一或更多的膜層、材料、金屬、氧化物、矽、二氧化矽、表面、電路、及/或晶粒的製造期間，完成一或更多的處理步驟。Broadly speaking, a controller can be defined as an electronic device with various integrated circuits, logic, memory, and / or software that receive instructions, send instructions, control operations, allow cleaning operations, allow endpoint measurements, and so on. The integrated circuit may include a chip in the form of firmware storing program instructions, digital signal processors (DSPs), chips defined as special application integrated circuits (ASICs), and / or one of executing program instructions (such as software) or More microprocessors or microcontrollers. The program instructions may be instructions transmitted to the controller in the form of various individual settings (or program files), which define operating parameters for performing specific processing on the semiconductor wafer, or for the semiconductor wafer, or for the system. In some implementations, these operating parameters may be part of a recipe defined by a process engineer, the recipe is used to form one or more layers, materials, metals, oxides, silicon, silicon dioxide, During surface, circuit, and / or die fabrication, one or more processing steps are completed.
在一些實施例中，控制器可為電腦的部分或耦接至電腦，該電腦係與系統整合、耦接至系統、或透過網路連接至系統、或上述之組合。例如，控制器係可位於「雲端」、或為晶圓廠主機電腦系統的全部或部分，其可允許基板處理之遠端存取。該電腦能達成對該系統之遠端存取，以監視製造操作之目前進度、查看過去製造操作之歷史、查看來自多個製造操作之趨勢或性能指標，俾改變目前處理之參數，以設定處理步驟而接續目前的處理、或開始新的處理。在一些範例中，遠端電腦(如伺服器)可透過網路將處理配方提供給系統，該網路可包含區域網路或網際網路。該遠端電腦可包含可達成參數及/或設定之輸入或編程的使用者介面，該等參數或設定接著自該遠端電腦傳送至該系統。在一些範例中，控制器接收資料形式之指令，在一或更多的操作期間，其針對該待執行的處理步驟之各者而指定參數。應理解，該等參數可特定於待執行之處理的類型、及工具(控制器係配置成與該工具介面接合或控制該工具)的類型。因此，如上所述，控制器可分散，例如藉由包含一或更多的分離的控制器，其透過網路連接在一起並朝共同的目標而作業，例如本文中所敘述之處理及控制。用於此類目的之分開的控制器之範例可為腔室上之一或更多的積體電路，其與位於遠端(例如為平台等級、或為遠端電腦的部分)之一或更多的積體電路連通，其結合以控制該腔室上的處理。In some embodiments, the controller may be part of or coupled to a computer, the computer being integrated with the system, coupled to the system, or connected to the system through a network, or a combination thereof. For example, the controller may be located in the "cloud" or be all or part of a fab host computer system, which may allow remote access to substrate processing. The computer can achieve remote access to the system to monitor the current progress of manufacturing operations, view the history of past manufacturing operations, view trends or performance indicators from multiple manufacturing operations, and change the current processing parameters to set processing Steps to continue the current process or start a new process. In some examples, a remote computer (such as a server) can provide processing recipes to the system over a network, which can include a local area network or the Internet. The remote computer may include a user interface for entering or programming parameters and / or settings that are then transmitted from the remote computer to the system. In some examples, the controller receives instructions in the form of data and specifies parameters for each of the processing steps to be performed during one or more operations. It should be understood that the parameters may be specific to the type of processing to be performed and the type of tool (the controller is configured to interface with or control the tool). Thus, as described above, the controllers can be decentralized, for example by including one or more separate controllers that are connected together through a network and operate toward a common goal, such as the processing and control described herein. An example of a separate controller for such purposes could be one or more integrated circuits on a chamber, one or more remotely located (e.g., platform-level, or part of a remote computer) Multiple integrated circuits are connected, which are combined to control processing on the chamber.
範例系統可包含(但不限於)電漿蝕刻腔室或模組、沉積腔室或模組、旋轉沖洗腔室或模組、金屬電鍍腔室或模組、潔淨腔室或模組、斜邊蝕刻腔室或模組、物理氣相沉積(PVD)腔室或模組、化學氣相沉積(CVD)腔室或模組、原子層沉積(ALD)腔室或模組、原子層蝕刻(ALE)腔室或模組、離子植入腔室或模組、徑跡腔室或模組、及可與半導體晶圓之製造及/或生產有關或用於其中的任何其他半導體處理系統。Example systems can include, but are not limited to, plasma etching chambers or modules, deposition chambers or modules, spin-rinsing chambers or modules, metal plating chambers or modules, clean chambers or modules, beveled edges Etching chamber or module, physical vapor deposition (PVD) chamber or module, chemical vapor deposition (CVD) chamber or module, atomic layer deposition (ALD) chamber or module, atomic layer etching (ALE ) Chambers or modules, ion implantation chambers or modules, track chambers or modules, and any other semiconductor processing system that may be related to or used in the manufacture and / or production of semiconductor wafers.
如上所述，依據將藉由工具執行之(複數)處理步驟，控制器可與半導體製造工廠中之下列一或更多者進行通訊：其他工具電路或模組、其他工具元件、群集工具、其他工具介面、鄰接之工具、鄰近之工具、遍布工廠的工具、主電腦、另一控制器、或材料運輸中所使用之工具，該材料運輸中所使用之工具將晶圓容器輸送往返於工具位置及/或裝載埠。。As mentioned above, depending on the (plural) processing steps to be performed by the tool, the controller can communicate with one or more of the following in a semiconductor manufacturing plant: other tool circuits or modules, other tool components, cluster tools, other Tool interface, adjacent tool, adjacent tool, factory-wide tool, host computer, another controller, or tool used in material transportation, the tool used in material transportation transports wafer containers to and from the tool location And / or loading port. .
以上所述之各種硬體與方法實施例可與例如用於製造半導體元件、顯示器、LED、光伏面板等之微影圖案化工具或處理一起使用。一般而言，雖然並非必要，但此類工具/處理會在一共同的製造廠房中一起使用或進行。The various hardware and method embodiments described above can be used with, for example, lithographic patterning tools or processes for manufacturing semiconductor elements, displays, LEDs, photovoltaic panels, and the like. Generally, although not necessary, such tools / processing are used or performed together in a common manufacturing facility.
薄膜之微影圖案化通常包括下列步驟之一些或全部，每一步驟以幾個可能的工具而提供：(1) 在工作件(例如，具有矽氮化物薄膜形成於其上之基板)上光阻之塗佈，使用旋塗式或噴塗式工具；(2) 光阻之固化，使用加熱板或加熱爐或其它合適的固化工具；(3) 以工具(例如，晶圓步進機)使光阻暴露至可見光或UV光或x射線光；(4) 使光阻顯影，以便使用工具(例如，濕式清洗台或噴塗式顯影器)選擇性地移除光阻及從而使其圖案化；(5) 使用乾式或電漿輔助蝕刻工具，將光阻圖案轉移至下方薄膜或工作件中；及 (6) 使用工具(例如，RF或微波電漿光阻剝除器)移除光阻。在某些實施例中，在塗佈光阻之前，可沉積可灰化硬遮罩層(例如，非晶碳層)及另一合適的硬遮罩(例如，抗反射層)。Lithographic patterning of thin films typically includes some or all of the following steps, each step provided with several possible tools: (1) glazing on a work piece (for example, a substrate with a silicon nitride film formed thereon) For resist coating, use spin-coating or spraying tools; (2) For photoresist curing, use a hot plate or furnace or other suitable curing tools; (3) Use tools (for example, wafer stepper) to apply Exposure of the photoresist to visible light or UV or x-ray light; (4) developing the photoresist to selectively remove and pattern the photoresist using a tool (e.g., a wet cleaning station or a spray developer) ; (5) use a dry or plasma-assisted etching tool to transfer the photoresist pattern to the underlying film or work piece; and (6) use a tool (such as an RF or microwave plasma photoresist stripper) to remove the photoresist . In some embodiments, an ashable hard mask layer (e.g., an amorphous carbon layer) and another suitable hard mask (e.g., an anti-reflective layer) may be deposited before the photoresist is applied.
應理解，本文中所述之配置及/或方法在本質上為示例性的，且這些具體的實施例或範例不應被視為限制性的，因為可能有許多的變化。本文中所述之特定程序或方法可代表任何數目之處理策略其中一或多者。因此，所述的各種動作可以所述的順序、以其它順序、以平行方式加以實施、或在一些例子中予以省略。同樣地，可改變上述處理之順序。在此已將某些參考文獻藉由參照而引入。應理解，在該等參考文獻中所作出的任何拋棄或否定未必適用於本文所述之實施例。同樣地，在該等參考文獻中描述為必要的任何特徵在本文之實施例中可被省略。It should be understood that the configurations and / or methods described herein are exemplary in nature and that these specific embodiments or examples should not be considered limiting as there may be many variations. The specific procedures or methods described herein may represent one or more of any number of processing strategies. Therefore, the various actions described may be performed in the order described, in other orders, in a parallel manner, or omitted in some examples. Similarly, the order of the above processes may be changed. Certain references have been incorporated herein by reference. It should be understood that any discard or negation made in these references may not necessarily apply to the embodiments described herein. Likewise, any features described as necessary in these references may be omitted in the embodiments herein.
本揭示內容之標的包括各種處理、系統及配置之所有新穎及非顯而易見之組合和次組合，及本文中所揭示之其它特徵、功能、行動、及/或性質，以及其任何及所有均等物。The subject matter of this disclosure includes all novel and non-obvious combinations and sub-combinations of the various processes, systems, and configurations, and other features, functions, actions, and / or properties disclosed herein, and any and all equivalents thereof.
1000‧‧‧電沉積設備1000‧‧‧ electrodeposition equipment
1001‧‧‧前端負載FOUP1001‧‧‧Front load FOUP
1002‧‧‧前端機器人1002‧‧‧ Front-end robot
1002a‧‧‧機器人軌道1002a‧‧‧Robot track
1003‧‧‧轉軸1003‧‧‧Shaft
1004‧‧‧前端可取用的站1004‧‧‧ front-accessible station
1006‧‧‧基板1006‧‧‧ substrate
1007‧‧‧電鍍槽1007‧‧‧plating tank
1008‧‧‧前端可取用的站1008‧‧‧Accessible station
1009‧‧‧固定托座1009‧‧‧Fixed bracket
101‧‧‧晶圓定位系統101‧‧‧ Wafer Positioning System
102‧‧‧杯件102‧‧‧ cup pieces
103‧‧‧底表面103‧‧‧ bottom surface
104‧‧‧內壁104‧‧‧Inner wall
105‧‧‧唇形密封105‧‧‧lip seal
106‧‧‧金屬沉積物106‧‧‧ metal deposits
200‧‧‧電鍍槽200‧‧‧plating tank
201‧‧‧電鍍感測器201‧‧‧Plating sensor
202‧‧‧杯件202‧‧‧ cup pieces
203‧‧‧底表面203‧‧‧ bottom surface
204‧‧‧內壁204‧‧‧Inner wall
205‧‧‧唇形密封205‧‧‧lip seal
207‧‧‧滴液屏蔽件207‧‧‧ drip shield
210‧‧‧電性接點210‧‧‧electric contact
218‧‧‧視線218‧‧‧ sight
300‧‧‧電鍍槽300‧‧‧plating tank
301‧‧‧電鍍感測器301‧‧‧Plating sensor
302‧‧‧杯件302‧‧‧cup pieces
307‧‧‧滴液屏蔽件307‧‧‧ drip shield
311‧‧‧清潔組件311‧‧‧Cleaning components
312‧‧‧擺臂312‧‧‧ swing arm
313‧‧‧乾燥器313‧‧‧ dryer
314‧‧‧清潔頭314‧‧‧clean head
315‧‧‧氣體管線315‧‧‧Gas pipeline
316‧‧‧噴嘴316‧‧‧Nozzle
401‧‧‧電鍍感測器401‧‧‧plating sensor
402‧‧‧杯件402‧‧‧cup pieces
418‧‧‧視線418‧‧‧ sight
420‧‧‧對準器具420‧‧‧ Alignment Apparatus
421‧‧‧切口421‧‧‧ incision
500‧‧‧操作500‧‧‧ operation
501‧‧‧操作501‧‧‧operation
503‧‧‧操作503‧‧‧ operation
505‧‧‧操作505‧‧‧Operation
507‧‧‧操作507‧‧‧Operation
509‧‧‧操作509‧‧‧operation
511‧‧‧操作511‧‧‧operation
515‧‧‧操作515‧‧‧ operation
517‧‧‧操作517‧‧‧operation
519‧‧‧操作519‧‧‧Operation
521‧‧‧操作521‧‧‧Operation
523‧‧‧操作523‧‧‧Operation
601‧‧‧電鍍感測器601‧‧‧Plating sensor
602‧‧‧杯件602‧‧‧ cup pieces
607‧‧‧滴液屏蔽件607‧‧‧ drip shield
618‧‧‧視線618‧‧‧ sight
801‧‧‧設備801‧‧‧equipment
803‧‧‧電鍍池803‧‧‧Plating Pool
805‧‧‧液位805‧‧‧ Level
807‧‧‧晶圓807‧‧‧wafer
808‧‧‧振動傳感器808‧‧‧Vibration Sensor
809‧‧‧基板固持件809‧‧‧ substrate holder
811‧‧‧可旋轉轉軸811‧‧‧rotatable shaft
813‧‧‧陽極813‧‧‧Anode
814‧‧‧惰性陽極814‧‧‧Inert anode
815‧‧‧膜815‧‧‧ film
817‧‧‧泵817‧‧‧Pump
819‧‧‧擴散板819‧‧‧ diffuser
821‧‧‧溢流儲槽821‧‧‧ Overflow storage tank
831‧‧‧參考電極831‧‧‧Reference electrode
833‧‧‧分離室833‧‧‧ Separation Room
835‧‧‧電源835‧‧‧ Power
839‧‧‧負輸出導線839‧‧‧Negative output wire
841‧‧‧正輸出導線841‧‧‧ Positive output lead
845‧‧‧加熱器845‧‧‧heater
847‧‧‧系統控制器847‧‧‧System Controller
900‧‧‧電沉積設備900‧‧‧ electrodeposition equipment
902‧‧‧電鍍模組902‧‧‧Plating module
904‧‧‧電鍍模組904‧‧‧Plating module
906‧‧‧電鍍模組906‧‧‧Plating module
912‧‧‧模組912‧‧‧Module
914‧‧‧模組914‧‧‧Module
916‧‧‧模組916‧‧‧Module
922‧‧‧化學稀釋模組922‧‧‧Chemical Dilution Module
924‧‧‧中央電沉積腔室924‧‧‧Central electrodeposition chamber
926‧‧‧給劑系統926‧‧‧Dosing system
928‧‧‧過濾及泵浦單元928‧‧‧filtration and pumping unit
930‧‧‧系統控制器930‧‧‧System Controller
932‧‧‧晶圓搬運站932‧‧‧Wafer Handling Station
940‧‧‧吊掛工具940‧‧‧Hanging tools
942‧‧‧卡匣942‧‧‧ Cassette
944‧‧‧卡匣944‧‧‧ Cassette
946‧‧‧吊掛工具946‧‧‧Hanging tools
948‧‧‧對準器948‧‧‧ aligner
950‧‧‧傳輸站950‧‧‧Transfer Station
圖1顯示其上具有不樂見之金屬沉積物的電鍍設備之基板固持件。FIG. 1 shows a substrate holder of a plating apparatus having undesired metal deposits thereon.
圖2A顯示具有電鍍感測器裝設於其上之電鍍設備之一部分的簡化視圖。FIG. 2A shows a simplified view of a portion of a plating apparatus having a plating sensor mounted thereon.
圖2B描繪基板固持件的近視橫剖面圖，以及圖2C描繪圖2B中之基板固持件的近視前視圖。FIG. 2B depicts a close-up cross-sectional view of the substrate holder, and FIG. 2C depicts a close-up front view of the substrate holder in FIG. 2B.
圖3A顯示帶有電鍍感測器及清潔手臂裝設於其上之電鍍設備之一部分，其中清潔手臂包含一乾燥器。FIG. 3A shows a part of a plating apparatus with a plating sensor and a cleaning arm mounted thereon, wherein the cleaning arm includes a dryer.
圖3B顯示圖3A所示之清潔手臂及乾燥器的近視圖。Fig. 3B shows a close-up view of the cleaning arm and dryer shown in Fig. 3A.
圖4A顯示對準器具的前視圖，以及圖4B顯示對準器具的側視圖，依據某些實施例該對準器具可與電鍍感測器結合使用。FIG. 4A shows a front view of the alignment instrument, and FIG. 4B shows a side view of the alignment instrument, which can be used in combination with a galvanic sensor according to some embodiments.
圖4C顯示裝設於基板固持件之杯件上之圖4A及圖4B中所示之對準器具的側視圖。Fig. 4C shows a side view of the alignment device shown in Figs. 4A and 4B mounted on a cup member of a substrate holder.
圖4D為電鍍設備之一部分之俯視圖，其顯示與圖4A-4C中所示之對準器具對準的電鍍感測器。FIG. 4D is a top view of a portion of a plating apparatus showing a plating sensor aligned with the alignment apparatus shown in FIGS. 4A-4C.
圖5為一流程圖，其說明依據某些實施例之偵測基板固持件上存在或不存在不樂見之金屬沉積物的方法。FIG. 5 is a flowchart illustrating a method for detecting the presence or absence of undesired metal deposits on a substrate holder according to some embodiments.
圖6A及6B顯示電鍍設備之一部分，特別係電鍍感測器裝設於其上的滴液屏蔽件。Figures 6A and 6B show a part of a plating apparatus, in particular a drip shield on which a plating sensor is mounted.
圖7A及7B提供實驗結果，其表明本文所述方法能可靠地用於偵測基板固持件上存在或不存在(以及程度)不樂見之金屬沉積物。Figures 7A and 7B provide experimental results showing that the method described herein can be reliably used to detect the presence or absence (and extent) of undesired metal deposits on a substrate holder.
圖8顯示電鍍設備之簡化視圖。Figure 8 shows a simplified view of the plating equipment.
圖9及10描繪多站電鍍設備之俯視圖。9 and 10 depict top views of a multi-station electroplating apparatus.
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US15/638,131 | 2017-06-29 | ||
| US15/638,131US10416092B2 (en) | 2013-02-15 | 2017-06-29 | Remote detection of plating on wafer holding apparatus |
| Publication Number | Publication Date |
|---|---|
| TW201920946Atrue TW201920946A (en) | 2019-06-01 |
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW107122044ATW201920946A (en) | 2017-06-29 | 2018-06-27 | Remote detection of plating on wafer holding apparatus |
| Country | Link |
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| JP (1) | JP7145893B2 (en) |
| KR (1) | KR102654656B1 (en) |
| CN (1) | CN110799833A (en) |
| TW (1) | TW201920946A (en) |
| WO (1) | WO2019006009A1 (en) |
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