本發明關於一種分割板狀工件而製造出多個晶片的晶片製造方法。The present invention relates to a wafer manufacturing method in which a plurality of wafers are manufactured by dividing a plate-like workpiece.
習知有一種方法，為了將以晶圓為代表的板狀工件（被加工物）分割為多個晶片，而使具有穿透性的雷射光束聚光於工件內部，形成透過多光子吸收來改質的改質層（改質區域）（例如，參考專利文獻1）。由於改質層比其他區域還要脆弱，因此藉由沿著分割預定線（切割道）形成改質層之後對工件施加力，能夠以此改質層為起點將工件分割為多個晶片。There is a known method in order to divide a plate-like workpiece (processed object) represented by a wafer into a plurality of wafers, so that a penetrating laser beam is condensed inside the workpiece to form a multi-photon absorption through transmission. A modified modified layer (modified region) (for example, refer to Patent Document 1). Since the reforming layer is more fragile than other areas, by applying a force to the workpiece after forming the reforming layer along a predetermined dividing line (cutting line), the workpiece can be divided into a plurality of wafers using the reforming layer as a starting point.
對形成有改質層的工件施加力的時候，例如，採用將具有伸張性的擴張片（擴張膠帶）黏貼於工件而進行擴張的方法（例如，參考專利文獻2）。在此方法中，通常，在照射雷射光束而在工件形成改質層前，會將擴張片黏貼於工件，然後，形成改質層之後將擴張片進行擴張而將工件分割為多個晶片。 [習知技術文獻] [專利文獻]When a force is applied to a workpiece having a modified layer, for example, a method is adopted in which a stretchable expansion sheet (expansion tape) is adhered to the workpiece and expanded (for example, refer to Patent Document 2). In this method, before the laser beam is irradiated to form a modified layer on the workpiece, an expansion sheet is adhered to the workpiece, and then, after the modified layer is formed, the expansion sheet is expanded to divide the workpiece into a plurality of wafers. [Habitual technical literature] [patent literature]
[專利文獻1] 日本特開2002-192370號公報 [專利文獻2] 日本特開2010-206136號公報[Patent Document 1] Japanese Patent Application Publication No. 2002-192370 [Patent Document 2] Japanese Patent Application Publication No. 2010-206136
[發明所欲解決的課題] 然而，在如上所述將擴張片進行擴張的方法中，由於使用後的擴張片無法再次使用，因此晶片製造所需的費用也容易提高。尤其，黏著材難以殘留於晶片的高性能擴張片由於價格也高，因此使用如此擴張片時，晶片製造所需的費用也提高。[Problems to be Solved by the Invention] However, in the method for expanding an expansion sheet as described above, since the expansion sheet after use cannot be reused, the cost required for wafer manufacturing is also easily increased. In particular, since a high-performance expansion sheet in which an adhesive material is difficult to remain on a wafer is also expensive, when such an expansion sheet is used, the cost required for wafer manufacturing also increases.
本發明為鑑於上述問題點所完成者，其目的在於提供一種晶片製造方法，可不使用擴張片就能夠分割板狀工件而製造出多個晶片。The present invention has been made in view of the above-mentioned problems, and an object thereof is to provide a wafer manufacturing method capable of producing a plurality of wafers by dividing a plate-like workpiece without using an expansion sheet.
[解決課題的技術手段] 根據本發明的一態樣，提供一種晶片製造方法，由具有晶片區域、及圍繞該晶片區域的外周剩餘區域的工件來製造多個晶片，該晶片區域是透過交叉的多條分割預定線劃分出成為該晶片的多個區域，且該方法具備：保持步驟，利用保持台直接保持工件；第1雷射加工步驟，在實施該保持步驟後，以對工件具有穿透性的波長的雷射光束的聚光點，定位於保持在該保持台的工件的內部第1深度位置的方式，沿著該分割預定線而僅在工件的該晶片區域照射雷射光束，進而沿著該晶片區域的該分割預定線形成第1改質層的同時，將該外周剩餘區域作為未形成有該第1改質層的補強部；第2雷射加工步驟，在實施該保持步驟後，以對工件具有穿透性的波長的雷射光束的聚光點，定位於保持在該保持台的工件的內部與該第1深度相異的第2深度位置的方式，沿著該分割預定線照射該雷射光束，進而沿著該分割預定線形成比該第1改質層還要長且在外周剩餘區域端部重疊的第2改質層；搬出步驟，在實施該第1雷射加工步驟及該第2雷射加工步驟後，自該保持台搬出工件；以及分割步驟，在實施該搬出步驟後，對工件施加力而將工件分割為各個該晶片，其中，在該分割步驟中，是透過加熱及冷卻施加該力而將工件分割為各個該晶片。[Technical Means for Solving the Problem] According to an aspect of the present invention, a wafer manufacturing method is provided, in which a plurality of wafers are manufactured from a workpiece having a wafer region and a peripheral remaining region surrounding the wafer region, the wafer regions being crossed A plurality of predetermined division lines are divided into a plurality of regions to become the wafer, and the method includes a holding step for directly holding the workpiece by using the holding table; and a first laser processing step for penetrating the workpiece after the holding step is performed. The condensing point of the laser beam of a linear wavelength is positioned at the first depth position inside the workpiece of the holding table, and the laser beam is irradiated only on the wafer region of the workpiece along the predetermined division line, and further The first modified layer is formed along the planned division line of the wafer region, and the remaining area on the outer periphery is used as a reinforcing portion where the first modified layer is not formed. The second laser processing step is performed during the holding step. Then, the focusing point of the laser beam having a wavelength penetrating to the workpiece is positioned at a second depth position different from the first depth inside the workpiece held on the holding table. Method, irradiate the laser beam along the planned division line, and further form a second modified layer longer than the first modified layer and overlapping at the end of the remaining area of the outer periphery along the planned division line; After the first laser processing step and the second laser processing step are performed, the workpiece is removed from the holding table; and the dividing step, after the carrying out step, a force is applied to the workpiece to divide the workpiece into individual wafers. Among them, in the dividing step, the workpiece is divided into individual wafers by applying the force through heating and cooling.
在本發明的一態樣中，在實施該第1雷射加工步驟及第2雷射加工步驟後、以及實施分割步驟前可更進一步具備：補強部去除步驟，去除該補強部。此外，在本發明的一態樣中，該保持台的上表面是由柔軟材料構成，且在該保持步驟中，可利用該柔軟材料保持工件的正面側。In one aspect of the present invention, after the first laser processing step and the second laser processing step are performed, and before the division step is performed, the method may further include a reinforcing portion removing step to remove the reinforcing portion. Furthermore, in one aspect of the present invention, the upper surface of the holding table is made of a soft material, and in the holding step, the front side of the workpiece can be held by the soft material.
[發明功效] 在涉及本發明一態樣的晶片製造方法中，在利用保持台直接保持工件的狀態下，以聚光點定位於第1深度位置的方式，僅在工件的晶片區域照射雷射光束，進而沿著晶片區域的分割預定線形成第1改質層，此外，以聚光點定位於第2深度位置的方式照射雷射光束，進而沿著分割預定線形成比第1改質層還要長且在外周剩餘區域端部重疊的第2改質層後，由於是透過加熱及冷卻施加力而將工件分割為多個晶片，因此就不需要使用對工件施加力而分割為各個晶片用的擴張片。如此，根據本發明一態樣的晶片製造方法，可不需使用擴張片就能夠分割板狀工件而製造出多個晶片。[Effect of the Invention] In the wafer manufacturing method related to one aspect of the present invention, the laser is irradiated only on the wafer region of the workpiece while the light spot is positioned at the first depth position while the workpiece is held directly by the holding table. The light beam further forms a first modified layer along the planned division line of the wafer region. In addition, the laser beam is irradiated so that the light collecting point is positioned at the second depth position, and further than the first modified layer is formed along the planned division line. After the second modified layer that is long and overlaps at the end of the remaining area of the outer periphery, the workpiece is divided into a plurality of wafers by applying a force through heating and cooling, so there is no need to divide the wafer into individual wafers by applying a force to the workpiece. Used expansion sheet. In this way, according to one aspect of the wafer manufacturing method of the present invention, a plurality of wafers can be manufactured by dividing a plate-like workpiece without using an expansion sheet.
此外，在涉及本發明一樣態的晶片製造方法中，僅在工件的晶片區域照射雷射光而形成沿著分割預定線的第1改質層的同時，由於外周剩餘區域作為未形成有第1改質層的補強部，因此晶片區域透過此補強部進行補強。因此，不會有因搬送等的時候施加力而讓工件分割為各個晶片，使工件變得無法適當搬送的問題。In addition, in the wafer manufacturing method related to the same aspect of the present invention, the first modified layer formed along a predetermined division line is formed only by irradiating laser light on the wafer region of the workpiece, and the remaining area on the outer periphery is regarded as the first modified layer not formed. The reinforcement part of the thick layer, so the wafer area is reinforced by this reinforcement part. Therefore, there is no problem that the workpiece is divided into individual wafers by applying a force during transportation or the like, and the workpiece cannot be appropriately transferred.
參考隨附圖式，說明涉及本發明一態樣的實施方式。涉及本實施方式的晶片製造方法包含保持步驟（參考圖3（A））、第1雷射加工步驟（參考圖3（B）、圖4（A）及圖4（B））、第2雷射加工步驟（參考圖3（B）、圖4（A）及圖4（B））、搬出步驟、補強部去除步驟（參考圖5（A）及圖5（B））、以及分割步驟（參考圖6）。An embodiment related to one aspect of the present invention will be described with reference to the accompanying drawings. The wafer manufacturing method according to this embodiment includes a holding step (refer to FIG. 3 (A)), a first laser processing step (refer to FIG. 3 (B), FIG. 4 (A), and FIG. 4 (B)), and a second laser. Injection processing steps (refer to FIG. 3 (B), FIG. 4 (A), and FIG. 4 (B)), unloading step, reinforcing portion removal step (refer to FIG. 5 (A) and FIG. 5 (B)), and division step ( (Refer to Figure 6).
在保持步驟中，利用卡盤台（保持台）直接保持具有晶片區域、及圍繞晶片區域的外周剩餘區域的工件（被加工物），該晶片區域是透過分割預定線劃分出多個區域。在第1雷射加工步驟中，照射對工件具有穿透性的波長的雷射光束，沿著晶片區域的分割預定線形成第1改質層的同時，將外周剩餘區域作為未形成有第1改質層的補強部。In the holding step, a chuck table (holding table) directly holds a workpiece (processed object) having a wafer area and a remaining area surrounding the wafer area. The wafer area is divided into a plurality of areas by a predetermined dividing line. In the first laser processing step, a laser beam having a wavelength penetrating to the workpiece is irradiated, a first modified layer is formed along a predetermined division line of the wafer region, and the remaining area on the outer periphery is regarded as the first region not formed. Reinforcement section of the reforming layer.
在第2雷射加工步驟中，照射對工件具有穿透性的雷射光束，沿著分割預定線形成比第1改質層還要長且在外周剩餘區域端部重疊的第2改質層。在搬出步驟中，自卡盤台搬出工件。在補強部去除步驟中，自工件去除補強部。在分割步驟中，透過加熱及冷卻施加力而將工件分割為多個晶片。以下，詳細說明涉及本實施方式的晶片製造方法。In the second laser processing step, a laser beam that penetrates the workpiece is irradiated, and a second modified layer that is longer than the first modified layer and overlaps at the end of the remaining area of the outer periphery is formed along a predetermined division line. . In the unloading step, the workpiece is unloaded from the chuck table. In the reinforcing portion removing step, the reinforcing portion is removed from the workpiece. In the dividing step, a workpiece is divided into a plurality of wafers by applying a force through heating and cooling. Hereinafter, a wafer manufacturing method according to this embodiment will be described in detail.
圖1為示意性表示本實施方式中使用的工件（被加工物）11的構成例的立體圖。如圖1所示，工件11為例如由矽（Si）、砷化鎵（GaAs）、磷化銦（InP）、氮化鎵（GaN）、碳化矽（SiC）等的半導體，藍寶石（Al2O3）、鈉玻璃、硼矽酸玻璃、石英玻璃等的介電體（絕緣體），或者鉭鋰酸（LiTaO3）、鈮鋰酸（LiNbO3）等的強介電體（強介電體結晶）組成的圓盤狀晶圓（基板）。FIG. 1 is a perspective view schematically showing a configuration example of a workpiece (to-be-processed object) 11 used in this embodiment. As shown in FIG. 1, the workpiece 11 is, for example, a semiconductor made of silicon (Si), gallium arsenide (GaAs), indium phosphide (InP), gallium nitride (GaN), silicon carbide (SiC), or the like, and sapphire (Al2 O3 ), dielectrics (insulators) such as soda glass, borosilicate glass, quartz glass, or ferroelectrics (ferroelectrics) such as tantalum lithium acid (LiTaO3 ), lithium niobium acid (LiNbO3 ) Crystalline) composed of disc-shaped wafers (substrates).
工件11的正面11a側是利用交叉的多條分割預定線（切割道）13劃分出成為晶片的多個區域15。再者，以下，將包含全部成為晶片的多個區域15的大致圓形區域稱作晶片區域11，圍繞晶片區域11c的環狀區域稱作外周剩餘區域11d。The front surface 11 a side of the workpiece 11 is a plurality of regions 15 divided into wafers by a plurality of intersecting predetermined division lines (dicing lines) 13. In the following, a substantially circular region including a plurality of regions 15 that are all wafers will be referred to as a wafer region 11, and a ring-shaped region surrounding the wafer region 11 c will be referred to as a peripheral peripheral region 11 d.
晶片區域11c內的各區域15中，根據需要，形成有IC（Integrated Circuit，積體電路）、MEMS（Micro Electro Mechanical Systems，微機電系統）、LED（Light Emitting Diode，發光二極體）、LD（Laser Diode，雷射二極體）、光二極體（Photodiode）、SAW（Surface Acoustic Wave，表面聲波）濾波器、BAW（Bulk Acoustic Wave，體聲波）濾波器等的元件。In each of the regions 15 in the wafer region 11c, IC (Integrated Circuit), MEMS (Micro Electro Mechanical Systems), LED (Light Emitting Diode), and LD are formed as necessary. (Laser Diode), photodiode, SAW (Surface Acoustic Wave) filter, BAW (Bulk Acoustic Wave) filter and other components.
沿著分割預定線13分割此工件11，藉此得到多個晶片。具體地，在工件11為矽晶圓的情況下，例如，可得到起記憶體或感測器等的作用的晶片。在工件11為砷化鎵基板或磷化銦基板、氮化鎵基板的情況下，例如，可得到起發光元件或受光元件等的作用的晶片。This workpiece 11 is divided along a predetermined division line 13, thereby obtaining a plurality of wafers. Specifically, when the workpiece 11 is a silicon wafer, for example, a wafer functioning as a memory or a sensor can be obtained. When the workpiece 11 is a gallium arsenide substrate, an indium phosphide substrate, or a gallium nitride substrate, for example, a wafer that functions as a light emitting element or a light receiving element can be obtained.
在工件11為碳化矽基板的情況下，例如，可得到起功率元件等的作用的晶片。在工件11為藍寶石基板的情況下，例如，可得到起發光元件等的作用的晶片。在工件11為由鈉玻璃或硼矽酸玻璃、石英玻璃等組成的玻璃基板的情況下，例如，可得到起光學零件或覆蓋構件（蓋玻璃）的作用的晶片。When the workpiece 11 is a silicon carbide substrate, for example, a wafer that functions as a power element or the like can be obtained. When the workpiece 11 is a sapphire substrate, for example, a wafer functioning as a light emitting element or the like can be obtained. When the workpiece 11 is a glass substrate composed of soda glass, borosilicate glass, quartz glass, or the like, for example, a wafer serving as an optical component or a cover member (cover glass) can be obtained.
在工件11為由鉭鋰酸、或鈮鋰酸等的強介電體組成的強介電體基板（強介電體結晶基板）的情況下，例如，可得到起過濾器或致動器等的作用的晶片。再者，並未對工件11的材質、形狀、構造、大小、及厚度等作限制。同樣地，也未對在成為晶片的區域15中形成的元件的種類、數量、形狀、構造、大小、及配置等作限制。在成為晶片的區域15中，也可不形成元件。When the workpiece 11 is a ferroelectric substrate (ferroelectric crystal substrate) composed of a ferroelectric material such as tantalum lithium acid or niobium lithium acid, for example, a filter or an actuator can be obtained. The role of the wafer. Furthermore, there are no restrictions on the material, shape, structure, size, thickness, etc. of the workpiece 11. Similarly, the type, number, shape, structure, size, arrangement, etc. of the elements formed in the region 15 to be a wafer are not limited. In the region 15 to be a wafer, no element may be formed.
在涉及本實施方式的晶片製造方法中，使用圓盤狀的矽晶圓作為工件11，製造出多個晶片。具體地，首先進行保持步驟，利用卡盤台直接保持此工件11。圖2為示意性表示本實施方式中使用的雷射加工裝置的構成例的立體圖。In the wafer manufacturing method according to this embodiment, a plurality of wafers are manufactured using a disc-shaped silicon wafer as the workpiece 11. Specifically, first, a holding step is performed, and the workpiece 11 is directly held by a chuck table. FIG. 2 is a perspective view schematically showing a configuration example of a laser processing apparatus used in the present embodiment.
如圖2所示，雷射加工裝置2具備搭載各構成要件的基台4。在基台4的上表面設有水平移動機構8，使吸引、保持工件11用的卡盤台（保持台）6在X軸方向（加工進給方向）及Y軸方向（分度進給方向）移動。水平移動機構8具備一對X軸導軌10，固定於基台4的上表面且與X軸方向大致平行。As shown in FIG. 2, the laser processing apparatus 2 includes a base 4 on which each constituent element is mounted. A horizontal movement mechanism 8 is provided on the upper surface of the base 4 so that the chuck table (holding table) 6 for sucking and holding the workpiece 11 is in the X-axis direction (processing feed direction) and Y-axis direction (indexing feed direction) )mobile. The horizontal movement mechanism 8 includes a pair of X-axis guide rails 10 and is fixed to the upper surface of the base 4 and is substantially parallel to the X-axis direction.
在X軸導軌10以可滑動的方式安裝X軸移動台12。在X軸移動台12的背面側（下表面側）設有螺帽部（未圖示），且此螺帽部和與Ｘ軸導軌10大致平行的X軸滾珠螺桿14螺合。An X-axis moving table 12 is slidably mounted on the X-axis guide rail 10. A nut portion (not shown) is provided on the back side (lower surface side) of the X-axis moving stage 12, and this nut portion is screwed with an X-axis ball screw 14 substantially parallel to the X-axis guide 10.
在X軸滾珠螺桿14的一端部與X軸脈衝馬達16連結。透過利用X軸馬達16而使X軸滾珠螺桿14旋轉，X軸移動台12沿著X軸導軌10在X軸方向移動。在鄰接X軸導軌10的位置設置X軸尺標18，用於在X軸方向檢測X軸移動台12的位置。An X-axis pulse motor 16 is connected to one end portion of the X-axis ball screw 14. When the X-axis ball screw 14 is rotated by the X-axis motor 16, the X-axis moving table 12 moves along the X-axis guide 10 in the X-axis direction. An X-axis scale 18 is provided at a position adjacent to the X-axis guide 10 for detecting the position of the X-axis mobile stage 12 in the X-axis direction.
在X軸移動台的正面（上表面）固定有與Ｙ軸方向大致平行的一對Ｙ軸導軌20。在Y軸導軌20以可滑動的方式安裝Y軸移動台22。在Y軸移動台22的背面側（下表面側）設有螺帽部（未圖示），且此螺帽部和與Y軸導軌20大致平行的Y軸滾珠螺桿24螺合。A pair of stern-axis guides 20 are fixed to the front surface (upper surface) of the X-axis moving stage, which is substantially parallel to the s-axis direction. A Y-axis moving stage 22 is slidably mounted on the Y-axis guide 20. A nut portion (not shown) is provided on the back side (lower surface side) of the Y-axis moving stage 22, and this nut portion is screwed with a Y-axis ball screw 24 substantially parallel to the Y-axis guide 20.
在Y軸滾珠螺桿24的一端部與Y軸脈衝馬達26連結。透過利用Y軸馬達26而使Y軸滾珠螺桿24旋轉，Y軸移動台22沿著Y軸導軌20在Y軸方向移動。在鄰接Y軸導軌20的位置設置Y軸尺標28，用於在Y軸方向檢測Y軸移動台22的位置。One end of the Y-axis ball screw 24 is connected to the Y-axis pulse motor 26. When the Y-axis ball screw 24 is rotated by the Y-axis motor 26, the Y-axis moving table 22 moves along the Y-axis guide 20 in the Y-axis direction. A Y-axis scale 28 is provided at a position adjacent to the Y-axis guide 20 for detecting the position of the Y-axis moving stage 22 in the Y-axis direction.
在Y軸移動台22的正面側（上表面側）設有支撐台30，且在此支撐台30的上部配置卡盤台6。卡盤台6的正面（上表面）成為吸引、保持上述工件11的背面11b側（或正面11a側）的保持面6a。保持面6a例如由氧化鋁等硬度高的多孔材質構成。但是，保持面6a也可由以聚乙烯或環氧樹脂等樹脂為代表的柔軟材料構成。A support table 30 is provided on the front side (upper surface side) of the Y-axis moving table 22, and a chuck table 6 is arranged above the support table 30. The front surface (upper surface) of the chuck table 6 is a holding surface 6 a that attracts and holds the back surface 11 b side (or the front surface 11 a side) of the workpiece 11. The holding surface 6a is made of, for example, a porous material having a high hardness such as alumina. However, the holding surface 6a may be made of a soft material typified by a resin such as polyethylene or epoxy resin.
此保持面6a透過形成於卡盤台6內部的吸引路6b（參考圖3（A）等）及閥件32（參考圖3（A）等）等連接至吸引源34（參考圖3（A）等）。在卡盤台6的下方設有旋轉驅動源（未圖示），且卡盤台6透過此旋轉驅動源在與Z軸方向大致平行的旋轉軸的周圍旋轉。This holding surface 6a is connected to a suction source 34 (refer to FIG. 3 (A) through a suction path 6b (refer to FIG. 3 (A), etc.) formed inside the chuck table 6 and a valve member 32 (refer to FIG. 3 (A), etc.). )Wait). A rotation drive source (not shown) is provided below the chuck table 6, and the chuck table 6 rotates around a rotation axis substantially parallel to the Z-axis direction through the rotation drive source.
在水平移動機構8的後方設有柱狀的支撐構造36。在支撐構造36的上部固定有在Y軸方向延伸的支撐臂38，且在此支撐臂38的前端部設有雷射照射單元40，脈衝振盪對工件11具有穿透性的波長（難以吸收的波長）的雷射光束17（參考圖3（B）），並將其照射在卡盤台6上的工件11。A columnar support structure 36 is provided behind the horizontal moving mechanism 8. A support arm 38 extending in the Y-axis direction is fixed to the upper portion of the support structure 36, and a laser irradiation unit 40 is provided at the front end of the support arm 38. The pulse oscillation has a wavelength penetrating to the workpiece 11 (difficult to absorb) Wavelength) of the laser beam 17 (refer to FIG. 3 (B)), and irradiate the workpiece 11 on the chuck table 6.
在鄰接雷射照射單元40的位置設有拍攝工件11的正面11a側或背面11b側的相機42。利用相機42拍攝工件11等形成的圖像，例如是在調整工件11與雷射照射單元40之間的位置等時候使用。A camera 42 is provided at a position adjacent to the laser irradiation unit 40 to capture the front surface 11 a side or the back surface 11 b side of the workpiece 11. The image formed by the workpiece 42 and the like with the camera 42 is used, for example, when adjusting the position between the workpiece 11 and the laser irradiation unit 40.
卡盤台6、水平移動機構8、雷射照射單元40、及相機42等的構成要件連接至控制單元（未圖式）。控制單元控制各構成要件，以使工件11被適當加工。Components such as the chuck table 6, the horizontal movement mechanism 8, the laser irradiation unit 40, and the camera 42 are connected to a control unit (not shown). The control unit controls each component so that the workpiece 11 is appropriately processed.
圖3（A）為用於說明保持步驟的剖面圖。再者，在圖3（A）中，一部分的構成要件以功能方塊來表示。在保持步驟中，如圖3（A）所示，例如，使工件11的背面11b與卡盤台6的保持面6a接觸。接著，開啟閥件32使吸引源34的負壓作用於保持面6a。FIG. 3 (A) is a sectional view for explaining a holding step. In addition, in FIG. 3 (A), a part of the constituent elements are represented by functional blocks. In the holding step, as shown in FIG. 3 (A), for example, the back surface 11 b of the workpiece 11 is brought into contact with the holding surface 6 a of the chuck table 6. Next, the valve member 32 is opened so that the negative pressure of the suction source 34 acts on the holding surface 6a.
藉此，工件11是在正面11a側朝上方露出的狀態下吸引、保持在卡盤台6。再者，在本實施方式中，如圖3（A）所示，利用卡盤台6直接保持工件11的背面11b側。即，在本實施方式中，不需要對工件11黏貼擴張片。Accordingly, the workpiece 11 is sucked and held on the chuck table 6 in a state where the front surface 11 a side is exposed upward. Furthermore, in this embodiment, as shown in FIG. 3 (A), the back surface 11 b side of the workpiece 11 is directly held by the chuck table 6. That is, in this embodiment, it is not necessary to adhere the expansion sheet to the workpiece 11.
在保持步驟之後，進行第1雷射加工步驟及第2雷射加工步驟，照射對工件11具有穿透性的波長的雷射光束17，形成沿著分割預定線13的改質層。再者，在本實施方式中，說明在第1雷射加工步驟之後進行第2雷射加工步驟的情況。After the holding step, a first laser processing step and a second laser processing step are performed to irradiate a laser beam 17 having a wavelength that is transparent to the workpiece 11 to form a modified layer along a predetermined division line 13. In this embodiment, a case where the second laser processing step is performed after the first laser processing step will be described.
圖3（B）為用於說明第1雷射加工步驟及第2雷射加工步驟的剖面圖，圖4（A）為示意性表示沿著全部分割預定線13形成改質層後的工件11的狀態，圖4（B）為示意性表示沿著各分割預定線13形成改質層的剖面圖。再者，在圖3（B）中，一部分的構成要件以功能方塊來表示。FIG. 3 (B) is a cross-sectional view for explaining the first laser processing step and the second laser processing step, and FIG. 4 (A) is a schematic view showing the workpiece 11 after the modified layer is formed along all the division lines 13 FIG. 4 (B) is a cross-sectional view schematically showing the formation of a modified layer along each of the planned division lines 13. In addition, in FIG. 3 (B), a part of the constituent elements are represented by functional blocks.
在第1雷射加工步驟中，首先使卡盤台６旋轉，例如，將當作對象的分割預定線13的延伸方向相對X軸方向平行。其次，使卡盤台6移動，將雷射照射單元40的位置對位在當作對象的分割預定線13的延長線上。接著，如圖3（B）所示，使卡盤台6在X軸方向（亦即，對象的分割預定線13的延伸方向）移動。In the first laser processing step, the chuck table 6 is first rotated. For example, the extension direction of the target division line 13 is parallel to the X-axis direction. Next, the chuck table 6 is moved, and the position of the laser irradiation unit 40 is aligned on the extension line of the intended division line 13. Next, as shown in FIG. 3 (B), the chuck table 6 is moved in the X-axis direction (that is, the extending direction of the target division line 13).
然後，在雷射單元40到達2處存在於當作對象的分割預定線13上，晶片區域11c與外周剩餘區域11d之間的一處邊界正上方的時間點時，自此雷射照射單元40開始雷射光束17的照射。在本實施方式中，如圖3（B）所示，自配置於工件11上方的雷射照射單元40朝向工件11的表面11a照射雷射光束17。Then, when the laser unit 40 arrives at the target division line 13 at two points, and at a point in time just above a boundary between the wafer region 11c and the remaining peripheral region 11d, the laser irradiation unit 40 has been The irradiation of the laser beam 17 is started. In this embodiment, as shown in FIG. 3 (B), the laser beam 17 is irradiated from the laser irradiation unit 40 disposed above the workpiece 11 toward the surface 11 a of the workpiece 11.
此雷射光束17的照射，持續到雷射照射單元40到達2處存在於當作對象的分割預定線13上，晶片區域11c與外周剩餘區域11d之間的另一處邊界正上方為止。即，在此，是沿著對象的分割預定線13而僅在晶片區域11c內照射雷射光束17。The irradiation of the laser beam 17 continues until the laser irradiation unit 40 reaches two places on the intended division line 13, and the other boundary between the wafer region 11 c and the remaining peripheral region 11 d is directly above. That is, here, the laser beam 17 is irradiated only in the wafer region 11 c along the intended division line 13.
此外，此雷射光束17是以聚光點定位於工件11內部的由表面11a（或背面11b）算起的第1深度位置的方式進行照射。如此，使對工件11具有穿透性的波長的雷射光束17聚光在工件11的內部，藉此能夠在聚光點及其附近透過多光子吸收來改質工件11的一部分，形成成為分割起點的改質層19（第1改質層19a）（第1改質層形成步驟）。In addition, the laser beam 17 is irradiated so that the light-condensing point is positioned inside the workpiece 11 at a first depth position from the front surface 11 a (or the back surface 11 b). In this way, the laser beam 17 having a wavelength penetrating to the workpiece 11 is condensed inside the workpiece 11, so that a part of the workpiece 11 can be modified by multiphoton absorption at and near the light-condensing point to form a division. The modified layer 19 (first modified layer 19a) at the starting point (first modified layer forming step).
在本實施方式的第1雷射加工步驟中，由於是沿著對象的分割預定線13而僅在晶片區域11c內照射雷射光束17，因此沿著對象的分割預定線13而僅在晶片區域11c內形成改質層19（第1改質層19a）。亦即，如圖4（B）所示，在第1雷射加工步驟中，不在外周剩餘區域11d形成改質層19（第1改質層19a）。In the first laser processing step of the present embodiment, since the laser beam 17 is irradiated only in the wafer region 11c along the target division line 13, the laser beam 17 is irradiated only along the target division line 13. A modified layer 19 (a first modified layer 19a) is formed in 11c. That is, as shown in FIG. 4 (B), in the first laser processing step, the modified layer 19 (the first modified layer 19a) is not formed in the remaining area 11d.
在上述第1雷射加工步驟之後進行第2雷射加工步驟，沿著相同分割預定線13而在與第1深度相異的深度位置形成改質層19。再者。在第1雷射加工步驟結束的階段中，由於雷射單元40存在於當作對象的分割預定線13的延長線上，因此不需要將此雷射照射單元40對準調整至分割預定線13。A second laser processing step is performed after the above-mentioned first laser processing step, and a modified layer 19 is formed at a depth position different from the first depth along the same planned division line 13. Again. At the end of the first laser processing step, since the laser unit 40 exists on the extension line of the target division line 13, the laser irradiation unit 40 need not be aligned and adjusted to the division line 13.
在第2雷射加工步驟中，首先使卡盤台6在X軸方向（對象的分割預定線13的延伸方向）移動。其次，在雷射照射單元40到達設定於工件11的外周剩餘區域11d的照射開始點正上方的時間點時，自此雷射照射單元40開始雷射光束17的照射。In the second laser processing step, the chuck table 6 is first moved in the X-axis direction (the extending direction of the target division line 13). Next, when the laser irradiation unit 40 reaches a time point set immediately above the irradiation start point of the peripheral remaining area 11d of the workpiece 11, the laser irradiation unit 40 starts to irradiate the laser beam 17 from then on.
在本實施方式中，與第1雷射加工步驟同樣地，自配置於工件11上方的雷射照射單元40朝向工件11的表面11a照射雷射光束17。此雷射光束17的照射，持續到雷射照射單元40通過工件11的晶片區域11c上而到達設定於外周剩餘區域11d的照射結束點正上方為止。In this embodiment, as in the first laser processing step, a laser beam 17 is irradiated from a laser irradiation unit 40 disposed above the workpiece 11 toward the surface 11 a of the workpiece 11. The irradiation of the laser beam 17 continues until the laser irradiation unit 40 passes through the wafer region 11c of the workpiece 11 and reaches directly above the irradiation end point set in the remaining peripheral region 11d.
即，在此，是沿著對象的分割預定線13而在外周剩餘區域11d的一部分及晶片區域11c照射雷射光束17。此外，此雷射光束17是以聚光點定位於工件11內部的由表面11a（或背面11b）算起的第2深度（與第1深度相異的深度）位置的方式進行照射。That is, here, the laser beam 17 is irradiated on a part of the outer peripheral remaining area 11d and the wafer area 11c along the target division line 13. In addition, the laser beam 17 is irradiated so that the light-condensing point is positioned inside the workpiece 11 at a second depth (a depth different from the first depth) from the front surface 11 a (or the back surface 11 b).
藉此，能夠沿著分割預定線13而在第2深度位置形成比第1雷射加工步驟中形成的改質層19（第1改質層19a）還要長且在外周剩餘區域11d端部重疊的改質層19（第2改質層19b）（第2改質層形成步驟）。在第2深度位置形成改質層19（第2改質層19b）後，以同樣的程序在與第1深度及第2深度相異的第3深度位置形成改質層19（第3改質層19c）（第3改質層形成步驟）。在第3深度位置形成改質層19時，可變更照射開始點及照射結束點的位置。Thereby, it is possible to form the modified layer 19 (the first modified layer 19a) longer than the modified layer 19 (the first modified layer 19a) formed in the first laser processing step at the second depth position along the planned dividing line 13 and at the end portion of the remaining area 11d The overlapping reforming layer 19 (second reforming layer 19b) (second reforming layer forming step). After the modified layer 19 (the second modified layer 19b) is formed at the second depth position, the modified layer 19 (the third modified version) is formed at a third depth position different from the first depth and the second depth by the same procedure. Layer 19c) (third modified layer forming step). When the modified layer 19 is formed at the third depth position, the positions of the irradiation start point and the irradiation end point can be changed.
再者，在本實施方式中，雖然在第1雷射加工步驟中沿著1條分割預定線13形成1層改質層19（第1改質層19a），且在第2雷射加工步驟中沿著相同1條分割預定線13形成2個改質層19（第2改質層19b及第3改質層19c），但對於沿著1條分割預定線13形成的改質層19，其數量及位置等並沒有特別限制。Furthermore, in this embodiment, although a single modified layer 19 (first modified layer 19a) is formed along a predetermined division line 13 in the first laser processing step, and in the second laser processing step, Two modified layers 19 (the second modified layer 19b and the third modified layer 19c) are formed along the same division line 13. However, for the modified layers 19 formed along the same division line 13, There are no particular restrictions on its number and location.
例如，在第1雷射加工步驟中沿著1條分割預定線13形成的改質層19的數量可為2層以上。此外，在第2雷射加工步驟中沿著相同1條分割預定線13形成的改質層19的數量可為1層、或3層以上。亦即，至少能夠在第1雷射加工步驟中沿著1條分割預定線13形成1層以上的改質層19，並且能夠在第2雷射加工步驟中沿著1條分割預定線13形成1層以上的改質層19即可。For example, in the first laser processing step, the number of the modified layers 19 formed along one predetermined division line 13 may be two or more. In addition, the number of the modified layers 19 formed along the same division line 13 in the second laser processing step may be one layer, or three or more layers. That is, at least one modified layer 19 can be formed along one division line 13 in the first laser processing step, and can be formed along one division line 13 in the second laser processing step. One or more modified layers 19 may be sufficient.
此外，改質層19較佳以裂痕到達正面11a（或背面11b）的條件來形成。當然，以裂痕到達正面11a及表面11b兩者的條件來形成改質層19亦可。藉此，使得能夠更適當地分割工件11。In addition, the modified layer 19 is preferably formed under conditions where cracks reach the front surface 11 a (or the back surface 11 b). Of course, the modified layer 19 may be formed under the condition that the cracks reach both the front surface 11a and the surface 11b. Thereby, the workpiece 11 can be divided more appropriately.
在工件11為矽晶圓的情況下，例如，如以下條件來形成改質層19。 工件：矽晶圓 雷射光束的波長：1340nm 雷射光束的重複頻率：90kHz 雷射光束的輸出：0.1W～2W 卡盤台的移動速度（加工進給速度）：180mm/s～1000mm/s，代表性為500mm/sWhen the workpiece 11 is a silicon wafer, for example, the modified layer 19 is formed under the following conditions. Workpiece: Silicon wafer laser beam wavelength: 1340nm Laser beam repetition frequency: 90kHz Laser beam output: 0.1W ～ 2W Movement speed of chuck table (processing feed rate): 180mm / s ～ 1000mm / s , Representative is 500mm / s
在工件11為砷化鎵基板或磷化銦基板的情況下，例如，如以下條件來形成改質層19。 工件：砷化鎵基板、磷化銦基板 雷射光束的波長：1064nm 雷射光束的重複頻率：20kHz 雷射光束的輸出：0.1W～2W 卡盤台的移動速度（加工進給速度）：100mm/s～400mm/s，代表性為200mm/sWhen the workpiece 11 is a gallium arsenide substrate or an indium phosphide substrate, for example, the modified layer 19 is formed under the following conditions. Workpiece: Gallium arsenide substrate, indium phosphide substrate Laser beam wavelength: 1064nm Laser beam repetition frequency: 20kHz Laser beam output: 0.1W ～ 2W Movement speed of chuck table (processing feed rate): 100mm / s ～ 400mm / s, representative is 200mm / s
在工件11為藍寶石基板的情況下，例如，如以下條件來形成改質層19。 工件：藍寶石基板 雷射光束的波長：1045nm 雷射光束的重複頻率：100kHz 雷射光束的輸出：0.1W～2W 卡盤台的移動速度（加工進給速度）：400mm/s～800mm/s，代表性為500mm/sWhen the workpiece 11 is a sapphire substrate, the modified layer 19 is formed under the following conditions, for example. Workpiece: Sapphire substrate laser beam wavelength: 1045nm Laser beam repetition frequency: 100kHz Laser beam output: 0.1W ～ 2W Movement speed of chuck table (processing feed rate): 400mm / s ～ 800mm / s, 500mm / s typical
在工件11為由鉭鋰酸或鈮鋰酸等的強介電體組成的強介電體基板的情況下，例如，如以下條件來形成改質層19。 工件：鉭鋰酸基板、鈮鋰酸基板 雷射光束的波長：532nm 雷射光束的重複頻率：15kHz 雷射光束的輸出：0.02W～0.2W 卡盤台的移動速度（加工進給速度）：270mm/s～420mm/s，代表性為300mm/sWhen the workpiece 11 is a ferroelectric substrate composed of a ferroelectric material such as tantalum lithium acid or niobium lithium acid, the modified layer 19 is formed under the following conditions, for example. Workpiece: tantalum lithium substrate, niobium lithium acid substrate Laser beam wavelength: 532nm Laser beam repetition frequency: 15kHz Laser beam output: 0.02W ～ 0.2W Movement speed of chuck table (processing feed rate): 270mm / s ～ 420mm / s, representative is 300mm / s
在工件11為由鈉玻璃或硼矽酸玻璃、石英玻璃等組成的玻璃基板的情況下，例如，如以下條件來形成改質層19。 工件：鈉玻璃基板、硼矽酸玻璃基板、石英玻璃基板 雷射光束的波長：532nm 雷射光束的重複頻率：50kHz 雷射光束的輸出：0.1W～2W 卡盤台的移動速度（加工進給速度）：300mm/s～600mm/s，代表性為400mm/sWhen the workpiece 11 is a glass substrate composed of soda glass, borosilicate glass, quartz glass, or the like, the modified layer 19 is formed under the following conditions, for example. Workpiece: Sodium glass substrate, borosilicate glass substrate, quartz glass substrate Laser beam wavelength: 532nm Laser beam repetition frequency: 50kHz Laser beam output: 0.1W ～ 2W Movement speed of chuck table (processing feed Speed): 300mm / s ～ 600mm / s, representative is 400mm / s
在工件11為氮化鎵基板的情況下，例如，如以下條件來形成改質層19。 工件：氮化鎵基板 雷射光束的波長：532nm 雷射光束的重複頻率：25kHz 雷射光束的輸出：0.02W～0.2W 卡盤台的移動速度（加工進給速度）：90mm/s～600mm/s，代表性為150mm/sWhen the workpiece 11 is a gallium nitride substrate, for example, the modified layer 19 is formed under the following conditions. Workpiece: GaN substrate laser beam wavelength: 532nm Laser beam repetition frequency: 25kHz Laser beam output: 0.02W ～ 0.2W Movement speed of chuck table (processing feed rate): 90mm / s ～ 600mm / s, representative is 150mm / s
在工件11為碳化矽晶圓的情況下，例如，如以下條件來形成改質層19。 工件：碳化矽基板 雷射光束的波長：532nm 雷射光束的重複頻率：25kHz 雷射光束的輸出：0.02W～0.2W，代表性為0.1W 卡盤台的移動速度（加工進給速度）：90mm/s～600mm/s，代表性地，在碳化矽基板的解理方向為90mm/s，在非解理方向為400mm/sWhen the workpiece 11 is a silicon carbide wafer, the modified layer 19 is formed under the following conditions, for example. Workpiece: Silicon carbide substrate Laser beam wavelength: 532nm Laser beam repetition frequency: 25kHz Laser beam output: 0.02W ～ 0.2W, representatively 0.1W Movement speed of chuck table (processing feed rate): 90mm / s ～ 600mm / s, typically, the cleavage direction of the silicon carbide substrate is 90mm / s, and the non-cleavage direction is 400mm / s
沿著對象的分割預定線13形成改質層19後，對殘餘全部的分割預定線13重複上述第1雷射加工步驟及第2雷射加工步驟。藉此，如圖4（A）所示，能夠沿著全部分割預定線13形成改質層19。After the modified layer 19 is formed along the target division line 13, the above-mentioned first laser processing step and second laser processing step are repeated for all remaining division lines 13. Thereby, as shown in FIG. 4 (A), the modified layer 19 can be formed along all the division-scheduled lines 13.
在本實施方式的第1雷射加工步驟中，由於是沿著分割預定線13而僅在晶片區域11c內形成改質層19（第1改質層19a），而沒有在外周剩餘區域11d形成改質層19（第1改質層19a），因此透過此外周剩餘區域11d來保持工件11的強度。藉此，不會有因搬送等的時候施加力而讓工件11分割為各個晶片的問題。如此，第1雷射加工步驟之後的外周剩餘區域11d起了用於補強晶片區域11的補強部的作用。In the first laser processing step of the present embodiment, since the modified layer 19 (the first modified layer 19a) is formed only in the wafer region 11c along the planned division line 13, it is not formed in the remaining peripheral region 11d. The modified layer 19 (the first modified layer 19a) maintains the strength of the workpiece 11 through the remaining area 11d in the outer periphery. Thereby, there is no problem that the workpiece 11 is divided into individual wafers by applying a force during transportation or the like. In this manner, the remaining peripheral area 11 d after the first laser processing step functions as a reinforcing portion for reinforcing the wafer area 11.
此外，在本實施方式的第1雷射加工步驟中，由於沒有在外周剩餘區域11d形成改質層19（第1改質層19a），因此，例如即使在自改質層19伸長的裂痕到達正面11a及背面11b兩者，且工件11被完全分割的狀況下，各晶片也不會脫落、分散。一般，當改質層19形成於工件11時，則在此改質層19附近工件11會膨脹。在本實施方式中，使因改質層19形成而產生的膨脹力，在起補強部作用的環狀外周剩餘區域11d朝內側作用，藉此壓住各晶片，並防止脫落、分散。In the first laser processing step of the present embodiment, since the modified layer 19 (the first modified layer 19 a) is not formed in the remaining area 11 d of the outer periphery, for example, the cracks extending from the self-modified layer 19 reach In a state where both the front surface 11 a and the back surface 11 b and the workpiece 11 are completely divided, each wafer does not fall off or scatter. Generally, when the modified layer 19 is formed on the workpiece 11, the workpiece 11 expands near the modified layer 19. In this embodiment, the expansion force generated by the formation of the reforming layer 19 is caused to act inward in the ring-shaped outer peripheral remaining area 11d serving as a reinforcing portion, thereby pressing each wafer and preventing it from falling off or being scattered.
在第1雷射加工步驟及第2雷射加工步驟之後，進行搬出步驟，自卡盤台6搬出工件11。具體地，例如利用能夠吸附、保持工件11的正面11a（或背面11b）整體的搬送單元（未圖式）來吸附工件11的正面11a整體之後，關閉閥件32而切斷吸引源34的負壓，將工件11搬出。再者，在本實施方式中，如上所述，由於外周剩餘區域11d起補強部的作用，因此不會有因搬送等的時候施加力而讓工件分割為各個晶片，使工件11變得無法適當搬送的問題。After the first laser processing step and the second laser processing step, an unloading step is performed, and the workpiece 11 is unloaded from the chuck table 6. Specifically, for example, the entire front surface 11a (or the back surface 11b) of the workpiece 11 is sucked and held by a transport unit (not shown), and the entire front surface 11a of the workpiece 11 is adsorbed. Press to carry out the workpiece 11. Furthermore, in this embodiment, as described above, the remaining peripheral area 11d functions as a reinforcing portion, so that the workpiece is not divided into individual wafers due to a force applied during transportation or the like, and the workpiece 11 cannot be properly adjusted. Problems with removal.
在搬出步驟之後，進行補強部去除步驟，自工件11去除補強部。圖5（A）及圖5（B）為用於說明補強部去除步驟的剖面圖。再者，在圖5（A）及圖5（B）中，一部分的構成要件以功能方塊來表示。補強部去除步驟例如是使用圖5（A）及圖5（B）表示的分割裝置52來進行。After the unloading step, a reinforcing portion removing step is performed to remove the reinforcing portion from the workpiece 11. 5 (A) and 5 (B) are cross-sectional views for explaining a step of removing a reinforcing portion. In addition, in FIG. 5 (A) and FIG. 5 (B), a part of the constituent elements are shown by functional blocks. The reinforcing portion removing step is performed using, for example, the dividing device 52 shown in FIGS. 5 (A) and 5 (B).
分割裝置52具備卡盤台（保持台）54，用於吸引、保持工件11。此卡盤台54的上表面的一部分成為吸引、保持工件11的晶片區域11c的保持面54a。保持面54a透過形成於卡盤台54內部的吸引路54b及閥件56等連接至吸引源58。此外，在此保持面54a的下方配置加熱器（加熱單元）54c。The dividing device 52 includes a chuck table (holding table) 54 for sucking and holding the workpiece 11. A part of the upper surface of the chuck table 54 is a holding surface 54 a that attracts and holds the wafer region 11 c of the workpiece 11. The holding surface 54 a is connected to the suction source 58 through a suction path 54 b, a valve member 56, and the like formed inside the chuck table 54. A heater (heating unit) 54c is disposed below the holding surface 54a.
在卡盤台54的上表面的另外一部分開口有吸引路54d的一端，用於吸引、保持工件11的外周剩餘區域11d（亦即，補強部）。吸引路54d的另一端側透過閥件60等連接至吸引源58。此卡盤台54連結至馬達等的旋轉驅動源（未圖式），在與鉛直方向大致平行的旋轉軸的周圍旋轉。One end of the suction path 54d is opened at another part of the upper surface of the chuck table 54 for sucking and holding the remaining peripheral area 11d (that is, the reinforcing portion) of the workpiece 11. The other end side of the suction path 54d is connected to a suction source 58 through a valve member 60 or the like. The chuck table 54 is connected to a rotation drive source (not shown) such as a motor, and rotates around a rotation axis substantially parallel to the vertical direction.
在卡盤台54的上方配置有切割單元62。切割單元62具備主軸64，成為相對保持面54大致平行的旋轉軸。在主軸64的一端側安裝磨粒分散於結合材而組成的環狀切割刀片66。A cutting unit 62 is disposed above the chuck table 54. The cutting unit 62 includes a main shaft 64 and is a rotation axis that is substantially parallel to the holding surface 54. An annular cutting blade 66 composed of abrasive particles dispersed in a bonding material is attached to one end side of the main shaft 64.
在主軸64的另一端側連結有馬達等的旋轉驅動源（未圖式），安裝於主軸64的一端側的切割刀片66透過自此旋轉驅動源傳達的力來旋轉。切割單元62例如支撐於升降機構（未圖式），且切割刀片66透過此升降機構在鉛直方向移動。A rotation drive source (not shown) such as a motor is connected to the other end side of the main shaft 64, and the cutting blade 66 attached to one end side of the main shaft 64 is rotated by a force transmitted from the rotation drive source. The cutting unit 62 is supported by, for example, a lifting mechanism (not shown), and the cutting blade 66 moves in the vertical direction through the lifting mechanism.
再者，在卡盤台54的上表面，對應工件11的晶片區域11c與外周剩餘區域11d之間的邊界的位置處形成有切割刀片用退刀槽（未圖式），用於防止與切割刀片66的接觸。In addition, on the upper surface of the chuck table 54, an undercut groove (not shown) for a cutting blade is formed at a position corresponding to a boundary between the wafer region 11 c of the workpiece 11 and the remaining peripheral region 11 d to prevent and cut The blade 66 is in contact.
在補強部去除步驟中，首先使工件11的背面11b與卡盤台54的保持面54a接觸。接著，開啟閥件56、60，使吸引源58的負壓作用於保持面54a等。藉此，工件11是在正面11a側朝上方露出的狀態下被吸引、保持在卡盤台54。再者，在本實施方式中，如圖5（A）所示，利用卡盤台54直接保持工件11的背面11b側。即，在此也不需要對工件11黏貼擴張片。In the reinforcing portion removing step, first, the back surface 11 b of the workpiece 11 is brought into contact with the holding surface 54 a of the chuck table 54. Next, the valves 56 and 60 are opened, and the negative pressure of the suction source 58 is applied to the holding surface 54 a and the like. Accordingly, the workpiece 11 is sucked and held on the chuck table 54 in a state where the front surface 11 a side is exposed upward. In this embodiment, as shown in FIG. 5A, the back surface 11 b side of the workpiece 11 is directly held by the chuck table 54. That is, there is no need to adhere the expansion sheet to the workpiece 11 here.
其次，使切割刀片66旋轉，切入工件11的晶片區域11c與外周剩餘區域11d之間的邊界。同時，如圖5（A）所示，使卡盤台54在與鉛直方向大致平行的旋轉軸的周圍旋轉。藉此，能夠沿著晶片區域11c與外周剩餘區域11d之間的邊界切斷工件11。Next, the cutting blade 66 is rotated to cut into the boundary between the wafer region 11c of the workpiece 11 and the remaining peripheral region 11d. At the same time, as shown in FIG. 5 (A), the chuck table 54 is rotated around a rotation axis substantially parallel to the vertical direction. Thereby, the workpiece 11 can be cut along the boundary between the wafer region 11c and the remaining peripheral region 11d.
然後，關閉閥件60，並切斷對工件11的外周剩餘區域11d的吸引源58的負壓。接著，如圖5（B）所示，自卡盤台54去除外周剩餘區域11d。藉此，在卡盤台54上僅殘留工件11的晶片區域11c。Then, the valve member 60 is closed, and the negative pressure of the suction source 58 to the remaining area 11 d of the outer periphery of the workpiece 11 is cut off. Next, as shown in FIG. 5 (B), the remaining peripheral area 11 d is removed from the chuck table 54. Thereby, only the wafer region 11 c of the workpiece 11 remains on the chuck table 54.
在補強部去除步驟之後，進行分割步驟，將工件11分割為各個晶片。具體地，透過加熱及冷卻使應力產生，而將工件11分割。圖6為用於說明分割步驟的剖面圖。再者，在圖6中，一部分的構成要件以功能方塊來表示。After the reinforcing portion removing step, a dividing step is performed to divide the workpiece 11 into individual wafers. Specifically, stress is generated by heating and cooling, and the workpiece 11 is divided. FIG. 6 is a cross-sectional view for explaining a dividing step. In addition, in FIG. 6, some of the constituent elements are represented by functional blocks.
分割步驟是使用連續的分割裝置52而進行的。如圖6所示，分割裝置52進一步具備配置於卡盤台54上方的噴嘴（冷卻單元）68。在本實施方式的分割步驟中，利用設於卡盤台54的加熱器54c加熱工件11後，藉由自此噴嘴68供給冷卻用的流體21冷卻工件11，使工件11分割所必需的應力產生。The division step is performed using a continuous division device 52. As shown in FIG. 6, the dividing device 52 further includes a nozzle (cooling unit) 68 disposed above the chuck table 54. In the dividing step of the present embodiment, the workpiece 11 is heated by the heater 54c provided on the chuck table 54 and then the cooling fluid 21 is supplied from the nozzle 68 to cool the workpiece 11 to generate the stress necessary to divide the workpiece 11 .
作為冷卻用的流體21，例如可使用水等的液體、或空氣等的氣體。使用液體作為流體21的情況下，可預先冷卻至此液體不會凍結的程度的低溫（例如，比凝固點還要高0.1℃~10℃的溫度）。但是，流體21的種類或流量、溫度等並沒有特別限制。例如，也可使用液態氮等的低溫液體，能夠透過氣化來更加帶走熱量。As the cooling fluid 21, for example, a liquid such as water or a gas such as air can be used. When a liquid is used as the fluid 21, it can be cooled in advance to a low temperature to which the liquid does not freeze (for example, a temperature that is 0.1 ° C to 10 ° C higher than the freezing point). However, the type, flow rate, temperature, and the like of the fluid 21 are not particularly limited. For example, a low-temperature liquid such as liquid nitrogen may be used, which can remove heat more by vaporization.
使加熱器54c運作而加熱工件11後，自噴嘴68供給冷卻用的流體21冷卻工件11時，則裂痕23透過產生於工件11內部的應力自改質層19伸長。藉此，工件11沿著分割預定線13分割為多個晶片25。When the heater 54 c is operated to heat the workpiece 11, when the cooling fluid 21 is supplied from the nozzle 68 to cool the workpiece 11, the crack 23 is extended from the reforming layer 19 through the stress generated in the workpiece 11. Thereby, the workpiece 11 is divided into a plurality of wafers 25 along a predetermined division line 13.
加熱及冷卻的條件（溫度、時間等）是按照工件11的種類等而設定。此外，透過加熱器54c的工件11的加熱，以及透過自噴嘴68供給的液體21的工件11的冷卻，較佳重複至適當分割工件11為止。Conditions for heating and cooling (temperature, time, etc.) are set according to the type of the work 11 and the like. In addition, the heating of the workpiece 11 through the heater 54 c and the cooling of the workpiece 11 through the liquid 21 supplied from the nozzle 68 are preferably repeated until the workpiece 11 is appropriately divided.
如此，在本實施方式中，藉由透過加熱及冷卻施加必要的力，能夠將工件11分割為各個晶片25。再者，在本實施方式中，雖然是在加熱工件11後進行冷卻，但也可在冷卻工件11後進行加熱。加熱及冷卻的方法也沒有特別限制。As described above, in the present embodiment, the work 11 can be divided into individual wafers 25 by applying a necessary force through heating and cooling. In the present embodiment, the workpiece 11 is cooled after being heated, but the workpiece 11 may be heated after being cooled. The method of heating and cooling is also not particularly limited.
如此，在涉及本實施方式的晶片製造方法中，在利用卡盤台（保持台）6直接保持工件（被加工物）11的狀態下，以聚光點定位於第1深度位置的方式，僅在工件11的晶片區域11c照射雷射光束17，進而沿著晶片區域11c的分割預定線13形成改質層19（第1改質層19a），此外，以聚光點定位於第2深度位置及第3深度位置的方式照射雷射光束17，進而沿著分割預定線13形成比形成於第1深度位置的改質層19還要長且在外周剩餘區域11d端部重疊的改質層19（第2改質層19b及第3改質層19c）後，由於是透過加熱及冷卻施加力而將工件11分割為各個晶片25，因此就不需要使用對工件11施加力而分割為各個晶片25用的擴張片。如此，若根據本實施方式的晶片製造方法，可不需使用擴張片就能夠分割板狀工件11的矽晶圓而製造出多個晶片25。As described above, in the wafer manufacturing method according to this embodiment, in a state where the workpiece (to-be-processed object) 11 is directly held by the chuck table (holding table) 6, the focusing point is positioned at the first depth position only. A laser beam 17 is irradiated on the wafer region 11c of the workpiece 11, and a modified layer 19 (a first modified layer 19a) is formed along the planned division line 13 of the wafer region 11c. In addition, it is positioned at a second depth position with a light collecting point. And the third depth position, the laser beam 17 is irradiated, and further along the planned division line 13 a modified layer 19 is formed which is longer than the modified layer 19 formed at the first depth position and overlaps at the end of the remaining peripheral region 11d (Second modified layer 19b and third modified layer 19c), since the workpiece 11 is divided into individual wafers 25 by applying a force through heating and cooling, there is no need to divide the workpiece 11 into individual wafers by applying a force to the workpiece 11. 25 expansion tablets. As described above, according to the wafer manufacturing method of the present embodiment, a plurality of wafers 25 can be manufactured by dividing the silicon wafer of the plate-like workpiece 11 without using an expansion sheet.
此外，在涉及本實施方式的晶片製造方法中，僅在工件11的晶片區域11c照射雷射光束17形成沿著分割預定線13的改質層19（第1改質層19a）的同時，由於外周剩餘區域11d作為未形成有改質層19的補強部，因此晶片區域11c透過此補強部進行補強。因此，不會有因搬送等的時候施加力而讓工件11分割為各個晶片25，使工件11變得無法適當搬送的問題。In addition, in the wafer manufacturing method according to the present embodiment, the laser beam 17 is irradiated only on the wafer region 11 c of the workpiece 11 to form a modified layer 19 (first modified layer 19 a) along a predetermined division line 13. The remaining peripheral area 11 d serves as a reinforcing portion in which the modified layer 19 is not formed, so the wafer area 11 c is reinforced by this reinforcing portion. Therefore, there is no problem that the workpiece 11 is divided into individual wafers 25 due to a force applied during transportation or the like, and the workpiece 11 cannot be appropriately transferred.
再者，本發明不限制於上述實施方式等的記載，而能夠作各種變更並且實施。例如，在上述實施方式中，雖然是在第1雷射加工步驟之後進行第2雷射加工步驟，但也可讓第1雷射加工步驟在第2雷射加工步驟之後進行。進一步，也可替換形成第2改質層19b的第2改質層形成步驟、以及形成第3改質層19c的第3改質層形成步驟的順序。In addition, this invention is not limited to description of the said embodiment etc., It can implement various changes. For example, in the above-mentioned embodiment, although the second laser processing step is performed after the first laser processing step, the first laser processing step may be performed after the second laser processing step. Further, the order of the second modified layer forming step of forming the second modified layer 19b and the third modified layer forming step of forming the third modified layer 19c may be replaced.
此外，在上述實施方式中，在對1條對象的分割預定線13進行第1雷射加工步驟後，雖然對相同1條分割預定線13進行第2雷射加工步驟，但本發明並不限於此態樣。例如，在對多條分割預定線13進行形成第1改質層19a的第1雷射加工步驟（第1改質層形成步驟）後，也可對多條分割預定線13進行第2雷射加工步驟。Furthermore, in the above-mentioned embodiment, after the first laser processing step is performed on one of the planned division lines 13 of an object, although the second laser processing step is performed on the same one planned division line 13, the present invention is not limited to This look. For example, after the first laser processing step (the first modified layer forming step) for forming the first modified layer 19 a is performed on the plurality of divided planned lines 13, the second laser may be performed on the plurality of divided planned lines 13. Processing steps.
再者，在此情況下，進行對多條分割預定線13形成第2改質層19b的第2雷射加工步驟（第2改質層形成步驟）之後，可進行對多條分割預定線13形成第3改質層19c的第2雷射加工步驟（第3改質層形成步驟）。Furthermore, in this case, after the second laser processing step (the second modified layer forming step) for forming the second modified layer 19 b on the plurality of divided planned lines 13, the plurality of divided planned lines 13 may be performed. A second laser processing step (a third modified layer forming step) for forming the third modified layer 19c.
更具體地，例如，首先進行第1改質層形成步驟，對平行於第1方向的全部分割預定線13形成第1改質層19a。其次，進行第2改質層形成步驟，對平行於第1方向的全部分割預定線13形成第2改質層19b。接著，進行第3改質層形成步驟，對平行於第1方向的全部分割預定線13形成第3改質層19c。More specifically, for example, first, a first modified layer forming step is performed to form a first modified layer 19a for all of the planned division lines 13 parallel to the first direction. Next, a second modified layer forming step is performed, and a second modified layer 19b is formed on all the planned division lines 13 parallel to the first direction. Next, a third modified layer forming step is performed to form a third modified layer 19c for all the planned division lines 13 parallel to the first direction.
然後，進行第1改質層形成步驟，對平行於與第1方向相異的第2方向的全部分割預定線13形成第1改質層19a。其次，進行第2改質層形成步驟，對平行於第2方向的全部分割預定線13形成第2改質層19b。接著，進行第3改質層形成步驟，對平行於第2方向的全部分割預定線13形成第3改質層19c。Then, a first modified layer forming step is performed to form a first modified layer 19a on all the planned division lines 13 parallel to the second direction different from the first direction. Next, a second modified layer forming step is performed to form a second modified layer 19b for all the planned division lines 13 parallel to the second direction. Next, a third modified layer forming step is performed, and a third modified layer 19c is formed on all the planned division lines 13 parallel to the second direction.
再者，在此情況下，也能夠在第2雷射加工步驟（第2改質層形成步驟及第3改質層形成步驟）之後進行第1雷射加工步驟（第1改質層形成步驟）。同樣地，也可替換形成第2改質層19b的第2改質層形成步驟、以及形成第3改質層19c的第3改質層形成步驟的順序。In this case, the first laser processing step (the first modified layer forming step) can be performed after the second laser processing step (the second modified layer forming step and the third modified layer forming step). ). Similarly, the order of the second modified layer forming step of forming the second modified layer 19b and the third modified layer forming step of forming the third modified layer 19c may be replaced.
此外，在上述實施方式中，雖然是利用卡盤台6保持工件11的背面11b，並自正面11a側照射雷射光束17，但也可利用卡盤台6直接保持工件11的正面11a側，並自背面11b側照射雷射光束17。In addition, in the above-mentioned embodiment, although the back surface 11b of the workpiece 11 is held by the chuck table 6 and the laser beam 17 is irradiated from the front surface 11a side, the front surface 11a side of the workpiece 11 may be directly held by the chuck table 6, A laser beam 17 is irradiated from the back surface 11b side.
圖7為用於說明涉及變形例的保持步驟的剖面圖。在涉及此變形例的保持步驟中，如圖7所示，例如使用由多孔質狀片材（多孔片材）44構成上表面的卡盤台（保持台）6即可，該片材是由以聚乙烯或環氧樹脂等的樹脂為代表的柔軟材料組成。FIG. 7 is a cross-sectional view for explaining a holding step according to a modification. In the holding step related to this modification, as shown in FIG. 7, for example, a chuck table (holding table) 6 having an upper surface made of a porous sheet (porous sheet) 44 may be used. Composition of soft materials typified by resins such as polyethylene and epoxy resin.
在此卡盤台6，是利用片材44的上表面44a來吸引、保持工件11的正面11a側。藉此，能夠防止形成於正面11a側的元件等的損壞。此片材44為卡盤台6的一部分，並且與卡盤台6的主體等一同重複使用。The chuck table 6 uses the upper surface 44 a of the sheet 44 to attract and hold the front surface 11 a side of the workpiece 11. This can prevent damage to the elements and the like formed on the front surface 11a side. This sheet 44 is a part of the chuck table 6 and is repeatedly used together with the main body of the chuck table 6 and the like.
但是，卡盤台6的上表面由上述多孔質狀片材44構成並非必要，至少以不損傷形成於工件11的正面11a側的元件等程度的柔軟材料構成即可。此外，片材44較佳以對卡盤台6的本體能夠裝卸的方式構成，而能夠在損壞的情況等進行交換。However, it is not necessary for the upper surface of the chuck table 6 to be composed of the porous sheet 44 described above, and it is sufficient to constitute at least a soft material that does not damage the elements formed on the front surface 11 a side of the workpiece 11. In addition, the sheet 44 is preferably configured to be detachable from the body of the chuck table 6 and can be exchanged in the event of damage or the like.
此外，在上述實施方式中，雖然是在搬出步驟之後、以及分割步驟之前進行補強部去除步驟，但例如也可在第1雷射加工步驟及第2雷射加工步驟之後、以及搬出步驟之前進行補強部去除步驟。再者，在搬出步驟之後、以及分割步驟之前進行補強部去除步驟的情況下，由於不需要在補強部去除步驟之後搬送工件11，因此容易避免使工件11變得無法適當搬送等的不方便。In addition, in the above-mentioned embodiment, the reinforcing portion removing step is performed after the unloading step and before the dividing step, but it may be performed, for example, after the first laser processing step and the second laser processing step, and before the unloading step. Reinforcing part removal step. Furthermore, when the reinforcing portion removing step is performed after the unloading step and before the dividing step, since it is not necessary to transfer the workpiece 11 after the reinforcing portion removing step, it is easy to avoid inconveniences such as preventing the workpiece 11 from being properly transferred.
此外，也可省略補強部去除步驟。在上述實施方式的第2雷射加工步驟中，沿著分割預定線13形成在外周剩餘區域11d端部重疊的改質層19（第2改質層19b及第3改質層19c）。於是，相較於改質層19與外周剩餘區域11d沒有重疊的情況下，外周剩餘區域11d更容易分割。因此，即使沒有進行補強部去除步驟，也能夠在分割步驟將晶片區域11c與外周剩餘區域11c同時分割。In addition, the step of removing the reinforcing portion may be omitted. In the second laser processing step of the above-mentioned embodiment, the modified layer 19 (the second modified layer 19b and the third modified layer 19c) overlapping at the end of the outer peripheral remaining area 11d is formed along the planned division line 13. Therefore, compared with the case where the modified layer 19 does not overlap with the remaining peripheral area 11d, the remaining peripheral area 11d is easier to divide. Therefore, even if the step of removing the reinforcing portion is not performed, the wafer region 11c and the remaining peripheral region 11c can be divided simultaneously in the dividing step.
再者，在此情況下，例如可在第2雷射加工步驟調整形成改質層19的範圍，以讓工件11的外周邊緣到改質層19末端的距離為2mm～3mm程度。此外，例如可在分割步驟分割晶片區域11c之前，在補強部形成成為分割起點的槽。圖8（A）為用於說明涉及變形例的分割步驟的剖面圖，圖8（B）為示意性表示涉及變形例的分割步驟之後的工件11狀態的俯視圖。In this case, for example, the range of the modified layer 19 may be adjusted in the second laser processing step so that the distance from the outer peripheral edge of the workpiece 11 to the end of the modified layer 19 is about 2 mm to 3 mm. In addition, for example, before the wafer region 11c is divided in the dividing step, a groove that becomes a starting point of division may be formed in the reinforcing portion. FIG. 8 (A) is a cross-sectional view for explaining a dividing step according to a modification, and FIG. 8 (B) is a plan view schematically showing a state of the workpiece 11 after the dividing step according to a modification.
在涉及變形例的分割步驟中，如圖8（A）及圖8（B）所示，使切割刀片66切入外周剩餘區域11d（亦即，補強部），進而形成成為分割起點的槽11e。此槽11e例如較佳為沿著分割預定線13形成。藉由形成如此的槽11e，使得能夠透過熱衝擊將工件11依照每個外周剩餘區域11d進行分割。再者，在涉及變形例的分割步驟中，可省略卡盤台54的吸引路54d或閥件60等。In the dividing step related to the modified example, as shown in FIGS. 8 (A) and 8 (B), the cutting blade 66 is cut into the remaining peripheral area 11d (that is, the reinforcing portion), and a groove 11e serving as a dividing starting point is formed. This groove 11e is preferably formed along a predetermined division line 13, for example. By forming such a groove 11e, it is possible to divide the workpiece 11 into each outer peripheral remaining area 11d by thermal shock. Further, in the dividing step related to the modified example, the suction path 54d of the chuck table 54, the valve member 60, and the like can be omitted.
另外，涉及上述實施方式及變形例的構造、方法等，只要不脫離本發明目的的範圍即可適宜變更並作實施。In addition, the structures, methods, and the like related to the above-described embodiments and modifications can be appropriately changed and implemented without departing from the scope of the object of the present invention.
11‧‧‧工件（被加工物）11‧‧‧Workpiece (workpiece)
11a‧‧‧正面11a‧‧‧front
11b‧‧‧背面11b‧‧‧Back
11c‧‧‧晶片區域11c‧‧‧Chip area
11d‧‧‧外周剩餘區域11d‧‧‧External area
13‧‧‧分割預定線（切割道）13‧‧‧ divided scheduled line (cutting road)
15‧‧‧區域15‧‧‧area
17‧‧‧雷射光束17‧‧‧laser beam
19‧‧‧改質層19‧‧‧ reformed layer
19a‧‧‧第1改質層19a‧‧‧The first reforming layer
19b‧‧‧第2改質層19b‧‧‧The second reforming layer
19c‧‧‧第3改質層19c‧‧‧The third reformed layer
21‧‧‧流體21‧‧‧fluid
23‧‧‧裂痕23‧‧‧ Rift
25‧‧‧晶片25‧‧‧Chip
2‧‧‧雷射加工裝置2‧‧‧laser processing equipment
4‧‧‧基台4‧‧‧ abutment
6‧‧‧卡盤台（保持台）6‧‧‧ chuck table (holding table)
6a‧‧‧保持面6a‧‧‧ holding surface
6b‧‧‧吸引路6b‧‧‧Attraction
8‧‧‧水平移動機構8‧‧‧ horizontal movement mechanism
10‧‧‧X軸導軌10‧‧‧X-axis guide
12‧‧‧X軸移動台12‧‧‧X-axis moving stage
14‧‧‧X軸滾珠螺桿14‧‧‧X-axis ball screw
16‧‧‧X軸脈衝馬達16‧‧‧X-axis pulse motor
18‧‧‧X軸尺標18‧‧‧X axis scale
20‧‧‧Y軸導軌20‧‧‧Y-axis guide
22‧‧‧Y軸移動台22‧‧‧Y-axis moving stage
24‧‧‧Y軸滾珠螺桿24‧‧‧Y-axis ball screw
26‧‧‧Y軸脈衝馬達26‧‧‧Y-axis pulse motor
28‧‧‧Y軸尺標28‧‧‧Y-axis scale
30‧‧‧支撐台30‧‧‧Support
32‧‧‧閥件32‧‧‧Valve
34‧‧‧吸引源34‧‧‧ Attraction source
36‧‧‧支撐構造36‧‧‧ support structure
38‧‧‧支撐臂38‧‧‧ support arm
40‧‧‧雷射照射單元40‧‧‧laser irradiation unit
42‧‧‧相機42‧‧‧ Camera
44‧‧‧片材（多孔片材）44‧‧‧ Sheet (Porous Sheet)
44a‧‧‧上表面44a‧‧‧upper surface
52‧‧‧分割裝置52‧‧‧ Split device
54‧‧‧卡盤台（保持台）54‧‧‧Chuck table (holding table)
54a‧‧‧保持面54a‧‧‧ keep face
54b‧‧‧吸引路54b‧‧‧Attraction
54c‧‧‧加熱器（加熱單元）54c‧‧‧heater (heating unit)
54d‧‧‧吸引路54d‧‧‧Attraction
56‧‧‧閥件56‧‧‧Valves
58‧‧‧吸引源58‧‧‧ Attraction source
60‧‧‧閥件60‧‧‧Valve
62‧‧‧切割單元62‧‧‧Cutting Unit
64‧‧‧主軸64‧‧‧ Spindle
66‧‧‧切割刀片66‧‧‧ cutting blade
圖1為示意性表示工件的構成例的立體圖。 圖2為示意性表示雷射加工裝置的構成例的立體圖。 圖3的圖3（A）為用於說明保持步驟的剖面圖，圖3（B）為用於說明第1雷射加工步驟及第2雷射加工步驟的剖面圖。 圖4的圖4（A）為示意性表示沿著全部分割預定線形成改質層後的工件狀態的俯視圖，圖4（B）為示意性表示沿著各分割預定線形成的改質層狀態的剖面圖。 圖5的圖5（A）及圖5（B）為用於說明補強部去除步驟的剖面圖。 圖6為用於說明分割步驟的剖面圖。 圖7為用於說明涉及變形例的保持步驟的剖面圖。 圖8的圖8（A）為用於說明涉及變形例的分割步驟的剖面圖，圖8（B）為示意性表示涉及變形例的分割步驟之後的工件狀態的俯視圖。FIG. 1 is a perspective view schematically showing a configuration example of a workpiece. FIG. 2 is a perspective view schematically showing a configuration example of a laser processing apparatus. 3 (A) of FIG. 3 is a cross-sectional view for explaining a holding step, and FIG. 3 (B) is a cross-sectional view for explaining a first laser processing step and a second laser processing step. FIG. 4 (A) of FIG. 4 is a plan view schematically showing the state of the workpiece after the reformed layer is formed along all the division lines, and FIG. 4 (B) is a schematic view of the state of the reformed layer formed along each division line Section view. 5 (A) and 5 (B) of FIG. 5 are cross-sectional views for explaining a step of removing a reinforcing portion. FIG. 6 is a cross-sectional view for explaining a dividing step. FIG. 7 is a cross-sectional view for explaining a holding step according to a modification. FIG. 8 (A) is a cross-sectional view for explaining a dividing step according to a modification, and FIG. 8 (B) is a plan view schematically showing a state of a workpiece after the dividing step according to a modification.
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2017-182986 | 2017-09-22 | ||
| JP2017182986AJP6896344B2 (en) | 2017-09-22 | 2017-09-22 | Chip manufacturing method |
| Publication Number | Publication Date |
|---|---|
| TW201916138Atrue TW201916138A (en) | 2019-04-16 |
| TWI770280B TWI770280B (en) | 2022-07-11 |
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW107133067ATWI770280B (en) | 2017-09-22 | 2018-09-19 | Wafer manufacturing method |
| Country | Link |
|---|---|
| JP (1) | JP6896344B2 (en) |
| KR (1) | KR102578958B1 (en) |
| CN (1) | CN109531838B (en) |
| TW (1) | TWI770280B (en) |
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