本發明係關於曝光裝置、平面顯示器之製造方法、元件製造方法及曝光方法，詳言之，係關於藉由對物體進行將能量束掃描於既定掃描方向之掃描曝光，將既定圖案形成在物體上之曝光裝置及方法、以及包含前述曝光裝置或方法之平面顯示器或元件之製造方法。The present invention relates to an exposure apparatus, a method of manufacturing a flat panel display, a method of manufacturing a component, and an exposure method, and more particularly to forming a predetermined pattern on an object by scanning an object by scanning an energy beam in a predetermined scanning direction. Exposure apparatus and method, and method of fabricating a flat panel display or component comprising the exposure apparatus or method described above.
一直以來，於製造液晶顯示元件、半導體元件(積體電路等)等電子元件(微元件)之微影製程，係使用曝光裝置，此曝光裝置使用能量束將形成在光罩或標線片(以下，統稱為「光罩」)之圖案轉印至玻璃板或晶圓(以下，統稱為「基板」)上。Conventionally, in the lithography process for manufacturing electronic components (microcomponents) such as liquid crystal display elements, semiconductor elements (integrated circuits, etc.), an exposure apparatus using an energy beam to be formed on a photomask or a reticle (using an exposure beam) is used. Hereinafter, the pattern collectively referred to as "photomask" is transferred to a glass plate or wafer (hereinafter collectively referred to as "substrate").
作為此種曝光裝置，已知有一種在使光罩與基板實質靜止之狀態下，將曝光用照明光(能量束)掃描於既定掃描方向，據以在基板上形成既定圖案之線束掃描式的掃描曝光裝置(例如參照專利文獻1)。As such an exposure apparatus, there is known a wire harness scanning type in which an illumination light (energy beam) for exposure is scanned in a predetermined scanning direction while the photomask and the substrate are substantially stationary, and a predetermined pattern is formed on the substrate. Scanning exposure apparatus (for example, refer to Patent Document 1).
於上述專利文獻1記載之曝光裝置，為修正基板上之曝光對象區域與光罩之位置誤差，係一邊使投影光學系往與曝光時之掃描方向相反方向移動、一邊透過投影光學系以對準顯微鏡進行基板上及光罩上之標記之測量(對準測量)，根據該測量結果修正基板與光罩之位置誤差。此處，由於係透過投影光學系測量基板上之對準標記，因此對準動作與曝光動作係依序(serially)實施，欲抑制所有基板之曝光處理所需之處理時間(週期時間)是非常困難的。In the exposure apparatus described in Patent Document 1, in order to correct the positional error between the exposure target region and the reticle on the substrate, the projection optical system is moved through the projection optical system while moving in the opposite direction to the scanning direction during exposure. The microscope is marked on the substrate and on the reticleRecord the measurement (alignment measurement) and correct the position error between the substrate and the mask based on the measurement result. Here, since the alignment marks on the substrate are measured by the projection optical system, the alignment operation and the exposure operation are performed sequentially, and the processing time (cycle time) required to suppress the exposure processing of all the substrates is very high. difficult.
先行技術文獻Advanced technical literature
[專利文獻1]日本特開2000一12422號公報[Patent Document 1] Japanese Patent Laid-Open Publication No. 2000-1242
本發明在上述情事下完成，其第1觀點之第1曝光裝置係透過投影光學系對物體照射照明光，相對該物體驅動該投影光學系以進行掃描曝光，其具備：用以檢測設在該物體之標記的標記檢測部、驅動該標記檢測部的第1驅動系、驅動該投影光學系的第2驅動系、以及控制該第1及第2驅動系以避免該投影光學系與該標記檢測部彼此接觸的控制裝置。According to the present invention, in the first aspect, the first exposure apparatus transmits illumination light to an object through a projection optical system, and drives the projection optical system to perform scanning exposure with respect to the object, and includes: a mark detecting unit for marking the object, a first driving system for driving the mark detecting unit, a second driving system for driving the projection optical system, and controlling the first and second driving systems to prevent the projection optical system and the mark detecting Control devices that are in contact with each other.
本發明第2觀點之第2曝光裝置，係透過投影光學系對物體照射照明光，相對該物體驅動該投影光學系以進行掃描曝光，其具備：用以檢測設於該物體之標記的標記檢測部、驅動該標記檢測部的第1驅動系、驅動該投影光學系的第2驅動系、以及於該掃描曝光中驅動該投影光學系與該標記檢測部中至少一方時控制該第1及第2驅動系中至少一方之驅動系以使該投影光學系與該標記檢測部之間隔相距既定距離以上的控制裝置。According to a second aspect of the present invention, in the second exposure apparatus, the object is irradiated with illumination light through the projection optical system, and the projection optical system is driven to perform scanning exposure with respect to the object, and the detection device is configured to detect a mark of the mark provided on the object. And controlling the first and the first driving system of the marking detecting unit, the second driving system for driving the projection optical system, and driving at least one of the projection optical system and the mark detecting unit during the scanning exposure The drive system of at least one of the two drive trains is a control device that is spaced apart from the mark detection unit by a predetermined distance or more.
本發明第3觀點之第3曝光裝置，係透過投影光學系對物體照射照明光，相對該物體驅動該投影光學系以進行掃描曝光動作，其具備：用以檢測設於該物體之標記的標記檢測部、驅動該標記檢測部的第1驅動系、驅動該投影光學系的第2驅動系、以及於該掃描曝光動作中之至少部分動作中控制該第1及第2驅動系分別以相異之驅動速度驅動該投影光學系及該標記檢測部的控制裝置。According to a third aspect of the present invention, in the third exposure apparatus, the object is transmitted through the projection optical systemIlluminating the illumination light, driving the projection optical system to perform a scanning exposure operation with respect to the object, and comprising: a mark detecting unit for detecting a mark provided on the object; a first driving system for driving the mark detecting unit; and driving the projection optical The second driving system and the control device for controlling the projection optical system and the mark detecting unit at different driving speeds during at least part of the scanning exposure operation.
本發明第4觀點之第4曝光裝置，係透過投影光學系對物體照射照明光，相對該物體驅動該投影光學系以進行掃描曝光，其具備：用以檢測設於該物體之標記的標記檢測部、驅動該標記檢測部的第1驅動系、驅動該投影光學系的第2驅動系、以及控制該第1及第2驅動系使該投影光學系停止被驅動之停止位置與該標記檢測部停止被驅動之停止位置不重疊的控制裝置。A fourth exposure apparatus according to a fourth aspect of the present invention is characterized in that the object is irradiated with illumination light through a projection optical system, and the projection optical system is driven to perform scanning exposure with respect to the object, and includes: mark detection for detecting a mark provided on the object a first drive system that drives the mark detection unit, a second drive system that drives the projection optical system, and a stop position that controls the first and second drive systems to stop the projection optical system from being driven, and the mark detection unit The control device that stops the driven stop positions does not overlap.
本發明第5觀點之第5曝光裝置，係透過投影光學系對物體照射照明光，相對該物體驅動該投影光學系以進行掃描曝光，其具備：用以檢測設於該物體之標記的標記檢測部、驅動該標記檢測部的第1驅動系、驅動該投影光學系的第2驅動系、以及控制該第1及第2驅動系以使該投影光學系之驅動開始時序與該標記檢測部之驅動開始時序相異的控制裝置。A fifth exposure apparatus according to a fifth aspect of the present invention is characterized in that an illumination light is applied to an object through a projection optical system, and the projection optical system is driven to perform scanning exposure with respect to the object, and the detection device is provided with a mark detection for detecting a mark provided on the object. a first driving system for driving the mark detecting unit, a second driving system for driving the projection optical system, and controlling the first and second driving systems to drive the driving start timing of the projection optical system and the mark detecting unit The control device that drives the start timing is different.
本發明第6觀點之第6曝光裝置，係透過投影光學系對物體照射照明光，相對該物體驅動該投影光學系以進行掃描曝光動作，其具備：用以檢測設於該物體之標記的標記檢測部、以及在該掃描曝光中對該投影光學系與該標記檢測部進行位置控制以使彼此之相對位置關係不變的控制裝置。According to a sixth aspect of the present invention, in the sixth exposure apparatus, the object is irradiated with illumination light through the projection optical system, and the projection optical system is driven to perform a scanning exposure operation, and the mark is provided to detect a mark provided on the object. The detecting unit and the control device that positionally control the projection optical system and the mark detecting unit in the scanning exposure so that the relative positional relationship between the two is constant.
本發明第7觀點之第7曝光裝置，係透過投影光學系對物體照射照明光，並藉由相對該物體將該投影光學系驅動於第1方向以進行曝光之曝光動作，將既定圖案形成在該物體上，其具備：用以檢測設於該物體之標記的標記檢測部、將該標記檢測部驅動於該第1方向的第1驅動系、以及將該投影光學系與該第1驅動系分開獨立的驅動於該第1方向的第2驅動系。According to a seventh aspect of the present invention, in the seventh exposure apparatus, the object is irradiated with illumination light through the projection optical system, and the projection optical system is driven in the first direction with respect to the object to perform an exposure exposure operation, and the predetermined pattern is formed in the exposure apparatus. The object includes: a mark detecting unit for detecting a mark provided on the object; a first drive system for driving the mark detecting unit in the first direction; and the projection optical system and the first drive system The second drive train that is driven independently in the first direction is separately and independently driven.
本發明第8觀點之平面顯示器之製造方法，包含：使用本發明之第1~第7曝光裝置中任一種之曝光裝置進行之該物體之曝光、以及曝光後之該物體之顯影。A method of manufacturing a flat panel display according to the eighth aspect of the present invention includes the exposure of the object and the development of the object after exposure using the exposure apparatus of any one of the first to seventh exposure apparatuses of the present invention.
本發明第9觀點之元件製造方法，包含：使用本發明之第1~第7曝光裝置中任一種之曝光裝置進行之該物體之曝光、以及曝光後之該物體之顯影。A method of manufacturing a device according to a ninth aspect of the present invention, comprising: exposing the object and developing the object after exposure using the exposure device of any one of the first to seventh exposure devices of the present invention.
本發明第10觀點之第1曝光方法，係透過投影光學系對物體照射照明光，相對該物體驅動該投影光學系以進行掃描曝光，其包含：對設於該物體之標記使用標記檢測部進行之檢測；對該標記檢測部使用第1驅動系進行之驅動；對該投影光學系使用第2驅動系進行之驅動；以及以該投影光學系與該標記檢測部彼此不接觸之方式進行之該第1及第2驅動系之控制。According to a tenth aspect of the present invention, in the first exposure method, the object is irradiated with illumination light through the projection optical system, and the projection optical system is driven to perform scanning exposure with respect to the object, and the mark detecting unit is provided for the mark provided on the object. Detection by the first drive system for the mark detection unit; driving by the second drive system for the projection optical system; and performing the projection optical system and the mark detection unit without contacting each other Control of the first and second drive trains.
本發明第11觀點之第2曝光方法，係透過投影光學系對物體照射照明光，相對該物體驅動該投影光學系以進行掃描曝光，其包含：對設於該物體之標記使用標記檢測部進行之檢測；對該標記檢測部使用第1驅動系進行之驅動；對該投影光學系使用第2驅動系進行之驅動；以及於該掃描曝光中，該投影光學系與該標記檢測部中之至少一方被驅動時，以該投影光學系與該標記檢測部之間隔相距既定距離以上之方式進行之該第1及第2驅動系中至少一方之驅動系之控制。According to a second aspect of the present invention, in the second exposure method, the object is irradiated with illumination light through the projection optical system, and the projection optical system is driven to perform scanning exposure with respect to the object, and the mark detecting unit is provided for the mark provided on the object. Detection of the mark detection unit using the first drive system; driving of the projection optical system using the second drive system;In the scanning exposure, when at least one of the projection optical system and the mark detecting unit is driven, the first and second driving systems are performed such that the distance between the projection optical system and the mark detecting unit is equal to or greater than a predetermined distance. Control of the drive system of at least one of the parties.
本發明第12觀點之第3曝光方法，係透過投影光學系對物體照射照明光，相對該物體驅動該投影光學系以進行掃描曝光，其包含：對設於該物體之標記使用標記檢測部進行之檢測；對該標記檢測部使用第1驅動系進行之驅動；對該投影光學系使用第2驅動系進行之驅動；以及於該掃描曝光動作中之至少部分動作中，以該投影光學系及該標記檢測部分別被不同驅動速度驅動之方式進行之該第1及第2驅動系之控制。According to a third aspect of the present invention, in the third exposure method, the object is irradiated with illumination light through the projection optical system, and the projection optical system is driven to perform scanning exposure with respect to the object, and includes: performing a mark detection unit on the mark provided on the object Detection of the mark detection unit using the first drive system; driving of the projection optical system using the second drive system; and at least part of the scanning exposure operation, the projection optical system and The mark detecting unit controls the first and second driving systems to be driven by different driving speeds.
本發明第13觀點之第4曝光方法，係透過投影光學系對物體照射照明光，相對該物體驅動該投影光學系以進行掃描曝光，其包含：對設於該物體之標記使用標記檢測部進行之檢測；對該標記檢測部使用第1驅動系進行之驅動；對該投影光學系使用第2驅動系進行之驅動；以及以停止該投影光學系之驅動之停止位置、與停止該標記檢測部之驅動之停止位置不重疊之方式進行之該第1及第2驅動系之控制。According to a fourth aspect of the present invention, in the fourth aspect of the invention, the illumination light is applied to the object through the projection optical system, and the projection optical system is driven to perform scanning exposure with respect to the object, and the mark detection unit is provided for the mark provided on the object. Detection of the mark detection unit using the first drive system; driving of the projection optical system using the second drive system; and stopping the stop position of the drive of the projection optical system and stopping the mark detection unit The control of the first and second drive systems is performed such that the stop positions of the drives do not overlap.
本發明第14觀點之第5曝光方法，係透過投影光學系對物體照射照明光，相對該物體驅動該投影光學系以進行掃描曝光，其包含：對設於該物體之標記使用標記檢測部進行之檢測；對該標記檢測部使用第1驅動系進行之驅動；對該投影光學系使用第2驅動系進行之驅動；以及以使該投影光學系之驅動開始時序與該標記檢測部之驅動開始時序相異之方式進行之該第1及第2驅動系之控制。According to a fifth aspect of the present invention, in the fifth aspect of the invention, the illumination light is applied to the object through the projection optical system, and the projection optical system is driven to perform scanning exposure with respect to the object, and the mark detection unit is provided for the mark provided on the object. Detection of the mark detection unit using the first drive system; driving of the projection optical system using the second drive system; and driving start timing of the projection optical system and driving of the mark detection unit The control of the first and second drive systems is performed in a manner that is different in timing.
本發明第15觀點之第6曝光方法，係透過投影光學系對物體照射照明光，相對該物體驅動該投影光學系以進行掃描曝光，其包含：對設於該物體之標記使用標記檢測部進行之檢測；以及於該掃描曝光中，彼此之相對位置關係不變之方式進行之該投影光學系之位置與該標記檢測部之位置之控制。The sixth exposure method according to the fifteenth aspect of the present invention is through a projection optical systemThe body illuminates the illumination light, and the projection optical system is driven to perform scanning exposure with respect to the object, and includes: detecting the mark using the mark detecting unit provided on the object; and in the scanning exposure, the relative positional relationship between the two is unchanged The position of the projection optical system and the position of the mark detecting portion are controlled.
本發明第16觀點之第7曝光方法，係透過投影光學系對物體照射照明光，並藉由相對該物體將該投影光學系驅動於第1方向以進行曝光之曝光動作，將既定圖案形成在該物體上，其包含：對設於該物體之標記使用標記檢測部進行之檢測；對該標記檢測部往該第1方向使用第1驅動系進行之驅動；以及對該投影光學系以和該第1驅動系分開獨立的往該第1方向使用第2驅動系進行之驅動。According to a seventh aspect of the present invention, in the seventh aspect of the invention, the illumination light is applied to the object through the projection optical system, and the projection optical system is driven in the first direction with respect to the object to perform an exposure exposure operation, thereby forming a predetermined pattern. The object includes: detecting the mark using the mark detecting unit provided in the object; driving the mark detecting unit to the first direction using the first driving system; and applying the first optical system to the projection optical system The first drive system is independently driven to drive in the first direction using the second drive train.
本發明第17觀點之平面顯示器之製造方法，包含：使用本發明之第1~第7曝光方法中任一種之曝光方法進行之該物體之曝光、以及曝光後之該物體之顯影。A method of manufacturing a flat panel display according to a seventeenth aspect of the present invention, comprising: exposing the object and exposing the object after exposure using the exposure method according to any one of the first to seventh exposure methods of the present invention.
本發明第18觀點之元件製造方法，包含：使用本發明之第1~第7曝光方法中任一種之曝光方法進行之該物體之曝光、以及曝光後之該物體之顯影。The device manufacturing method according to the eighteenth aspect of the present invention includes the exposure of the object and the development of the object after exposure using the exposure method of any one of the first to seventh exposure methods of the present invention.
10、10A、10B‧‧‧液晶曝光裝置10, 10A, 10B‧‧‧ liquid crystal exposure device
12M‧‧‧照明系模組12M‧‧‧Lighting Module
14M‧‧‧光罩載台模組14M‧‧‧Photomask stage module
16M‧‧‧投影光學系模組16M‧‧‧Projection Optical System Module
18M‧‧‧基板載台模組18M‧‧‧Substrate stage module
18AM‧‧‧基板載台模組18AM‧‧‧Substrate stage module
20‧‧‧照明系20‧‧‧Lighting
20M‧‧‧對準系模組20M‧‧ Alignment module
22‧‧‧照明系本體22‧‧‧Lighting body
28A~28G‧‧‧架台28A~28G‧‧‧Rack
30‧‧‧光罩載台裝置30‧‧‧Photomask stage device
32‧‧‧載台本體32‧‧‧Station body
40、40A、40B‧‧‧投影光學系40, 40A, 40B‧‧‧Projection Optics
42‧‧‧投影系本體42‧‧‧Projection Ontology
44‧‧‧驅動系44‧‧‧Driver
46‧‧‧測量系46‧‧‧Measurement Department
50‧‧‧基板載台裝置50‧‧‧Substrate stage device
52‧‧‧載台本體52‧‧‧Substrate body
60、60A、60B‧‧‧對準系60, 60A, 60B‧‧‧ alignment system
62‧‧‧對準顯微鏡62‧‧‧Aligning microscope
66‧‧‧驅動系66‧‧‧Driver
80‧‧‧導件80‧‧‧ Guides
82‧‧‧標尺82‧‧‧ ruler
84、86‧‧‧讀頭84, 86‧‧‧ read head
IA‧‧‧曝光區域IA‧‧‧ exposed area
IAM‧‧‧照明區域IAM‧‧‧Lighting area
IL‧‧‧照明光IL‧‧‧Lights
M‧‧‧光罩M‧‧‧Photo Mask
P‧‧‧基板P‧‧‧Substrate
S1~S4‧‧‧照射區域S1 ~S4 ‧‧‧Irradiated area
圖1係一實施形態之液晶曝光裝置的概念圖。Fig. 1 is a conceptual diagram of a liquid crystal exposure apparatus of an embodiment.
圖2係顯示以圖1之液晶曝光裝置之控制系為中心構成之主控制裝置之輸出入關係的方塊圖。Fig. 2 is a block diagram showing the input/output relationship of the main control unit centered on the control system of the liquid crystal exposure apparatus of Fig. 1.
圖3(a)~圖3(d)係用以說明曝光動作時之液晶曝光裝置之動作的圖(其1~其4)。3(a) to 3(d) are for explaining the operation of the liquid crystal exposure device during the exposure operationFigure (its 1 to 4).
圖4(a)~圖4(c)係用以說明曝光動作時之液晶曝光裝置之動作的圖(其5~其7)。4(a) to 4(c) are views for explaining the operation of the liquid crystal exposure apparatus during the exposure operation (5 to 7).
圖5係用以說明第1變形例之對準系之構成的圖。Fig. 5 is a view for explaining the configuration of an alignment system according to a first modification.
圖6係用以說明第2變形例之對準系之構成的圖。Fig. 6 is a view for explaining the configuration of an alignment system according to a second modification.
圖7係用以說明投影系本體、及對準顯微鏡之測量系之構成的圖。Fig. 7 is a view for explaining the configuration of a projection system main body and a measurement system for an alignment microscope.
圖8係顯示投影光學系、及對準系之驅動系之變形例(其1)的圖。Fig. 8 is a view showing a modification (No. 1) of a projection optical system and a drive system of the alignment system.
圖9係顯示投影光學系、及對準系之驅動系之變形例(其2)的圖。Fig. 9 is a view showing a modification (No. 2) of the projection optical system and the drive system of the alignment system.
圖10係顯示液晶曝光裝置中之模組更換的概念圖。Fig. 10 is a conceptual diagram showing the replacement of a module in a liquid crystal exposure apparatus.
以下，針對一實施形態，使用圖1~圖7加以說明。Hereinafter, an embodiment will be described with reference to Figs. 1 to 7 .
圖1中顯示了一實施形態之液晶曝光裝置10的概念圖。液晶曝光裝置10，係以例如用於液晶顯示裝置(平面顯示器)等之矩形(方型)之玻璃基板P(以下，僅簡稱基板P)為曝光對象物之步進掃描(step & scan)方式之投影曝光裝置，所謂的掃描機。Fig. 1 is a conceptual diagram showing a liquid crystal exposure apparatus 10 of an embodiment. In the liquid crystal exposure apparatus 10, a rectangular (square) glass substrate P (hereinafter, simply referred to as a substrate P) such as a liquid crystal display device (planar display) is used as a step & scan method for exposing an object. Projection exposure device, so-called scanner.
液晶曝光裝置10，具有照射作為曝光用能量束之照明光IL的照明系20、與投影光學系40。以下，將與從照明系20透過投影光學系40照射於基板P之照明光IL之光軸平行之方向稱為Z軸方向，並設定在與Z軸正交之平面內彼此正交之X軸及Y軸以進行說明。又，本實施形態之座標系中，Y軸係與重力方向實質平行。因此，XZ平面與水平面實質平行。此外，以繞Z軸之旋轉(傾斜)方向為θ z方向進行說明。The liquid crystal exposure device 10 has an illumination system 20 that illuminates illumination light IL as an energy beam for exposure, and a projection optical system 40. Hereinafter, a direction parallel to the optical axis of the illumination light IL that is transmitted from the illumination system 20 through the projection optical system 40 to the substrate P is referred to as a Z-axis direction, and an X-axis orthogonal to each other in a plane orthogonal to the Z-axis is set. And the Y axis for explanation. Further, in the coordinate system of the present embodiment, the Y-axis system is substantially parallel to the direction of gravity. Therefore, the XZ plane is substantially parallel to the horizontal plane. Further, the direction of the rotation (tilting) about the Z axis will be described as the θ z direction.
此處，於本實施形態，一片基板P上設定有複數個曝光對象區域(適當的稱區劃區域、或照射(shot)區域來進行說明)，於此等複數個照射區域依序轉印光罩圖案。又，本實施形態，雖係針對基板P上設定有4個區劃區域之情形(所謂取4面之情形)進行說明，但區劃區域之數量不限定於此，可適當變更。Here, in the present embodiment, a plurality of exposure targets are set on one substrate P.The area (referred to as a zone area or a shot area as appropriate) is used to sequentially transfer the mask pattern to the plurality of irradiation areas. In the present embodiment, the case where four division regions are set on the substrate P (so-called four surfaces) will be described. However, the number of the division regions is not limited thereto, and can be appropriately changed.
又，於液晶曝光裝置10，雖係進行所謂的步進掃描方式之曝光動作，但於掃描曝光動作時，光罩M及基板P實質為靜止狀態，而照明系20及投影光學系40(照明光IL)相對光罩M及基板P分別於X軸方向(適當的稱掃描方向)以長行程移動(參照圖1之白箭頭)。相對於此，於為了變更曝光對象之區劃區域而進行之步進動作時，光罩M於X軸方向以既定行程步進移動，基板P於Y軸方向以既定行程步進移動(分別參照圖1之黑箭頭)。Further, in the liquid crystal exposure apparatus 10, the so-called step-scan type exposure operation is performed, but during the scanning exposure operation, the mask M and the substrate P are substantially in a stationary state, and the illumination system 20 and the projection optical system 40 (illumination) The light IL) moves with respect to the mask M and the substrate P in a long stroke in the X-axis direction (refer to the scanning direction as appropriate) (refer to the white arrow in FIG. 1). On the other hand, when the stepping operation is performed to change the division area of the exposure target, the mask M moves in the X-axis direction by a predetermined stroke, and the substrate P moves in the Y-axis direction by a predetermined stroke (see FIG. 1 black arrow).
圖2中，顯示了統籌控制液晶曝光裝置10之構成各部之主控制裝置90之輸出入關係的方塊圖。如圖2所示，液晶曝光裝置10具備照明系20、光罩載台裝置30、投影光學系40、基板載台裝置50、對準系60等。In Fig. 2, a block diagram showing the relationship between the input and output of the main control unit 90 constituting each unit of the liquid crystal exposure apparatus 10 is shown. As shown in FIG. 2, the liquid crystal exposure apparatus 10 includes an illumination system 20, a mask stage apparatus 30, a projection optical system 40, a substrate stage apparatus 50, an alignment system 60, and the like.
照明系20，具備包含照明光IL(參照圖1)之光源(例如，水銀燈)等之照明系本體22。於掃描曝光動作時，由主控制裝置90控制例如包含線性馬達等之驅動系24，據以將照明系本體22於X軸方向以既定長行程掃描驅動。主控制裝置90，透過例如包含線性編碼器等之測量系26求出照明系本體22之X軸方向之位置資訊，根據該位置資訊進行照明系本體22之位置控制。於本實施形態中，作為照明光IL，係使用例如g線、h線、i線等。The illumination system 20 includes an illumination system main body 22 such as a light source (for example, a mercury lamp) including illumination light IL (see FIG. 1). In the scanning exposure operation, the main control unit 90 controls, for example, a drive system 24 including a linear motor, and the illumination system main body 22 is scanned and driven in a predetermined length in the X-axis direction. The main control unit 90 obtains position information of the illumination system main body 22 in the X-axis direction by, for example, a measurement system 26 including a linear encoder, and performs position control of the illumination system main body 22 based on the position information. In the present embodiment, as the illumination light IL, for example, a g line, an h line, an i line, or the like is used.
光罩載台裝置30具備保持光罩M之載台本體32。載台本體32，可藉由例如包含線性馬達等之驅動系34於X軸方向及Y軸方向適當的步進移動。於X軸方向為變更曝光對象之區劃區域的步進動作時，主控制裝置90藉由控制驅動系34，將載台本體32步進驅動於X軸方向。又，如後所述，於Y軸方向為變更曝光對象之區劃區域內進行掃描曝光之區域(位置)的步進動作時，主控制裝置90藉由控制驅動系34，將載台本體32步進驅動於Y軸方向。驅動系34，能在後述對準動作時將光罩M適當的微幅驅動於XY平面內之3自由度(X、Y、θ z)方向。光罩M之位置資訊，例如以包含線性編碼器等之測量系36加以求出。The mask stage device 30 includes a stage body 32 that holds the mask M. The stage main body 32 can be appropriately moved in the X-axis direction and the Y-axis direction by, for example, a drive system 34 including a linear motor. When the X-axis direction is a stepping operation for changing the division area of the exposure target, the main control unit 90 controls the drive system 34 to step-drive the stage main body 32 in the X-axis direction. Further, as will be described later, when the Y-axis direction is a stepping operation of the region (position) in which the scanning exposure is performed in the division region to be exposed, the main control unit 90 controls the driving system 34 to take the stage body 32 steps. Drive in the Y-axis direction. The drive train 34 can appropriately drive the mask M to a three-degree-of-freedom (X, Y, θ z) direction in the XY plane during the alignment operation described later. The position information of the mask M is obtained, for example, by a measurement system 36 including a linear encoder or the like.
投影光學系40，具備包含以等倍系在基板P(參照圖1)上形成光罩圖案之正立正像之光學系等的投影系本體42。投影系本體42配置在基板P與光罩M之間形成之空間內(參照圖1)。於掃描曝光動作時，主控制裝置90藉由例如控制包含線性馬達等之驅動系44，以和照明系本體22同步之方式，於X軸方向以既定長行程掃描驅動投影系本體42。主控制裝置90，透過例如包含線性編碼器等之測量系46求出投影系本體42於X軸方向之位置資訊，根據該位置資訊進行投影系本體42之位置控制。The projection optical system 40 includes a projection system main body 42 including an optical system or the like that forms an erect positive image of a mask pattern on a substrate P (see FIG. 1). The projection system main body 42 is disposed in a space formed between the substrate P and the photomask M (see FIG. 1). In the scanning exposure operation, the main control unit 90 scans and drives the projection unit body 42 in a predetermined length in the X-axis direction by, for example, controlling the drive system 44 including a linear motor or the like so as to be synchronized with the illumination system main body 22. The main control unit 90 obtains position information of the projection system main body 42 in the X-axis direction by, for example, a measurement system 46 including a linear encoder, and performs position control of the projection system main body 42 based on the position information.
回到圖1，於液晶曝光裝置10，當以來自照明系20之照明光IL照明光罩M上之照明區域IAM時，以通過光罩M之照明光IL，透過投影光學系40將該照明區域IAM內之光罩圖案之投影像(部分正立像)，形成在基板P上與照明區域IAM共軛之照明光IL之照射區域(曝光區域IA)。並相對光罩M及基板P，使照明光IL(照明區域IAM及曝光區域IA)相對移動於掃描方向據以進行掃描曝光動作。亦即，於液晶曝光裝置10，係以照明系20及投影光學系40在基板P上生成光罩M之圖案，藉由照明光IL使基板P上之感應層(抗蝕層)之曝光，於基板P上形成該圖案。Referring back to FIG. 1, in the liquid crystal exposure apparatus 10, when the illumination area IAM on the mask M is illuminated by the illumination light IL from the illumination system 20, the illumination is transmitted through the projection optical system 40 by the illumination light IL passing through the mask M. The projection image (partial erect image) of the reticle pattern in the area IAM forms an irradiation area (exposure area IA) of the illumination light IL conjugated to the illumination area IAM on the substrate P. With respect to the mask M and the substrate P, the illumination light IL (the illumination area IAM and the exposure area IA) is relatively moved in the scanning direction to perform a scanning exposure operation. That is, in the liquid crystal exposure device 10,The illumination system 20 and the projection optical system 40 form a pattern of the mask M on the substrate P, and the illumination layer IL exposes the sensing layer (resist layer) on the substrate P to form the pattern on the substrate P.
此處，於本實施形態，以照明系20在光罩M上生成之照明區域IAM，包含於Y軸方向分離之一對矩形區域。一個矩形區域之Y軸方向長度，係設定為光罩M之圖案面之Y軸方向長度(亦即設定在基板P上之各區劃區域之Y軸方向長度)之例如1/4。又，一對矩形區域間之間隔亦同樣的設定為光罩M之圖案面之Y軸方向之長度之例如1/4。因此，生成在基板P上之曝光區域IA，亦同樣的包含於Y軸方向分離之一對矩形區域。本實施形態，為將光罩M之圖案完全地轉印至基板P，雖須針對一區劃區域進行二次掃描曝光動作，但具有可使照明系本體22及投影系本體42小型化之優點。關於掃描曝光動作之具體例，留待後敘。Here, in the present embodiment, the illumination area IAM generated by the illumination system 20 on the mask M is included in a pair of rectangular areas separated in the Y-axis direction. The length of the rectangular region in the Y-axis direction is set to, for example, 1/4 of the length of the pattern surface of the mask M in the Y-axis direction (that is, the length of the Y-axis direction of each of the division regions set on the substrate P). Further, the interval between the pair of rectangular regions is also set to be, for example, 1/4 of the length of the pattern surface of the mask M in the Y-axis direction. Therefore, the exposure region IA formed on the substrate P is similarly included in the pair of rectangular regions separated in the Y-axis direction. In the present embodiment, in order to completely transfer the pattern of the mask M to the substrate P, it is necessary to perform a secondary scanning exposure operation for one region, but it is advantageous in that the illumination system main body 22 and the projection system main body 42 can be miniaturized. Specific examples of the scanning exposure operation will be described later.
基板載台裝置50，具被保持基板P之背面(與曝光面相反之面)之載台本體52。回到圖2，於Y軸方向變更曝光對象之區劃區域的步進動作時，主控制裝置90藉由控制例如包含線性馬達等之驅動系54，將載台本體52往Y軸方向步進驅動。驅動系54，可在後述之基板對準動作時將基板P微幅驅動於XY平面內之3自由度(X、Y、θ z)方向。基板P(載台本體52)之位置資訊，係以例如包含線性編碼器等之測量系56加以求出。The substrate stage device 50 has a stage body 52 that is held on the back surface (surface opposite to the exposure surface) of the substrate P. Referring back to Fig. 2, when the stepping operation of the division region of the exposure target is changed in the Y-axis direction, the main control unit 90 drives the stage main body 52 in the Y-axis direction by controlling, for example, the drive system 54 including a linear motor or the like. . The drive train 54 can micro-amplify the substrate P in the three-degree-of-freedom (X, Y, θ z) direction in the XY plane during the substrate alignment operation to be described later. The positional information of the substrate P (the stage main body 52) is obtained by, for example, a measurement system 56 including a linear encoder.
回到圖1，對準系60具備對準顯微鏡62。對準顯微鏡62，被配置在基板P與光罩M之間形成之空間內(於Z軸方向之基板P與光罩M間之位置)，檢測形成在基板P之對準標記Mk(以下，僅稱標記Mk)、及形成在光罩M之標記(未圖示)。本實施形態中，標記Mk在各區劃區域之四個角落附近分別形成有1個(1個區劃區域、例如4個)，光罩M之標記，透過投影光學系40形成在與標記Mk對應之位置。又，標記Mk及光罩M之標記之數量及位置，不限定於此，可適當變更。此外，於各圖面中，為便於理解，標記Mk係顯示的較實際大。Returning to Fig. 1, the alignment system 60 is provided with an alignment microscope 62. The alignment microscope 62 is disposed in a space formed between the substrate P and the mask M (at a position between the substrate P and the mask M in the Z-axis direction), and detects an alignment mark Mk formed on the substrate P (hereinafter, Only the mark Mk) and the mark formed on the mask M (not shown). In the present embodiment, the mark Mk is formed in the vicinity of four corners of each of the divisional regions (one divisional region, for example, four), and the mask M is marked.It is noted that the projection optical system 40 is formed at a position corresponding to the mark Mk. Further, the number and position of the marks of the mark Mk and the mask M are not limited thereto, and can be appropriately changed. In addition, in each of the drawings, the mark Mk is displayed more realistically for the sake of understanding.
對準顯微鏡62配置在投影系本體42之+X側。對準顯微鏡62具有在Y軸方向分離之一對檢測視野(檢測區域)，可同時檢測一個區劃區域內於Y軸方向分離之例如2個標記Mk。The alignment microscope 62 is disposed on the +X side of the projection system body 42. The alignment microscope 62 has a pair of detection fields (detection areas) separated in the Y-axis direction, and can simultaneously detect, for example, two marks Mk separated in the Y-axis direction in one division area.
又，對準顯微鏡62，可同時(換言之，在不改變對準顯微鏡62之位置之情形下)檢測形成在光罩M之標記、與形成在基板P之標記Mk。主控制裝置90，例如在光罩M每次進行X步進動作、或基板P進行Y步進動作時，求出形成在光罩M之標記與形成在基板P之標記Mk之相對位置偏移資訊，並進行基板P與光罩M在沿XY平面之方向之相對的定位，以修正該位置偏移(抵消、或減少)。又，對準顯微鏡62，係由檢測(觀察)光罩M之標記的光罩檢測部、與檢測(觀察)基板P之標記Mk的基板檢測部藉由共通之箱體等一體構成，透過該共通之箱體由驅動系66加以驅動。或者，亦可以是光罩檢測部與基板檢測部由個別之箱體等構成，此場合，最好是構成為例如光罩檢測部與基板檢測部可藉由實質共通之驅動系66以同等之動作特性來進行移動。Further, by aligning the microscope 62, the mark formed on the mask M and the mark Mk formed on the substrate P can be simultaneously detected (in other words, without changing the position of the alignment microscope 62). The main control device 90 determines, for example, when the mask M performs the X step operation or the substrate P performs the Y step operation, the relative positional deviation between the mark formed on the mask M and the mark Mk formed on the substrate P is obtained. Information, and the relative positioning of the substrate P and the mask M in the direction along the XY plane is performed to correct the positional offset (offset, or decrease). Further, the alignment microscope 62 is configured by integrally forming a mask detecting portion for detecting (observing) the mask M and a substrate detecting portion for detecting (observing) the mark Mk of the substrate P by a common box or the like, and transmitting the same. The common housing is driven by drive train 66. Alternatively, the mask detecting unit and the substrate detecting unit may be configured by individual cases or the like. In this case, it is preferable that, for example, the mask detecting unit and the board detecting unit are equivalent to each other by the drive line 66 that is substantially common. Action characteristics to move.
主控制裝置90(參照圖2)，藉由控制例如包含線性馬達等之驅動系66(參照圖2)，將對準顯微鏡62於X軸方向以既定長行程加以驅動。又，主控制裝置90，透過例如包含線性編碼器等之測量系68求出對準顯微鏡62之X軸方向之位置資訊，根據該位置資訊進行對準顯微鏡62之位置控制。此外，驅動系66亦可同時具有用以將對準顯微鏡62驅動於Y軸方向之例如線性馬達。The main control unit 90 (see FIG. 2) drives the alignment microscope 62 in the X-axis direction by a predetermined length by controlling, for example, a drive system 66 (see FIG. 2) including a linear motor. Further, the main control unit 90 obtains positional information of the alignment microscope 62 in the X-axis direction by, for example, a measurement system 68 including a linear encoder, and performs position control of the alignment microscope 62 based on the position information. In addition, the drive train 66 can also have a drive for driving the alignment microscope 62 to Y.For example, a linear motor in the axial direction.
此處，對準系60之對準顯微鏡62與上述投影光學系40之投影系本體42雖係物理上(機械上)獨立(分離)的要素，由主控制裝置90(參照圖2)以彼此獨立之方式進行驅動(速度、及位置)控制，但驅動對準顯微鏡62之驅動系66與驅動投影系本體42之驅動系44，於X軸方向之驅動係共用例如線性馬達、線性導件等之一部分，對準顯微鏡62及投影系本體42之驅動特性、或由主控制裝置90進行之控制特性是實質同等的。Here, the alignment microscope 62 of the alignment system 60 and the projection system body 42 of the projection optical system 40 are physically (mechanically) independent (separated) elements, and are controlled by the main control device 90 (refer to FIG. 2). The driving (speed, and position) control is performed independently, but the driving system 66 that drives the alignment microscope 62 and the driving system 44 that drives the projection unit body 42 share the driving system in the X-axis direction, for example, a linear motor, a linear guide, or the like. In part, the driving characteristics of the alignment microscope 62 and the projection unit body 42 or the control characteristics by the main control unit 90 are substantially equivalent.
具體舉一例而言，在例如以動圈式線性馬達將對準顯微鏡62、投影系本體42分別驅動於X軸方向之情形時，上述驅動系66與驅動系44係共用固定子磁性體(例如永久磁石等)單元。相對於此，可動子線圈單元則係對準顯微鏡62、投影系本體42分別獨立具有，主控制裝置90(參照圖2)藉由個別進行對該線圈單元之電力供應，獨立的控制對準顯微鏡62往X軸方向之驅動(速度、及位置)、與投影系本體42往X軸方向之驅動(速度、及位置)。因此，主控制裝置90可變更(任意變更)於X軸方向之對準顯微鏡62與投影系本體42之間隔(距離)。此外，主控制裝置90，亦可於X軸方向使對準顯微鏡62與投影系本體42以不同的速度移動。Specifically, for example, when the alignment microscope 62 and the projection system main body 42 are respectively driven in the X-axis direction by a moving coil type linear motor, the drive system 66 and the drive system 44 share a fixed sub-magnetic body (for example, Permanent magnets, etc.) units. On the other hand, the movable sub-coil unit is separately provided between the alignment microscope 62 and the projection system main body 42, and the main control device 90 (refer to FIG. 2) individually supplies power to the coil unit, and independently controls the alignment microscope. The driving (speed, and position) of the 62 in the X-axis direction and the driving (speed, and position) in the X-axis direction of the projection system main body 42. Therefore, the main control device 90 can change (arbitrarily change) the distance (distance) between the alignment microscope 62 and the projection system main body 42 in the X-axis direction. Further, the main control unit 90 can also move the alignment microscope 62 and the projection unit main body 42 at different speeds in the X-axis direction.
主控制裝置90(參照圖2)，使用對準顯微鏡62檢測形成在基板P上之複數個標記Mk，根據該檢測結果(複數個標記Mk之位置資訊)以公知之全晶圓加強型對準(EGA)方式，算出形成有檢測對象之標記Mk之區劃區域之排列資訊(包含與區劃區域之位置(座標值)、形狀等相關之資訊)。The main control device 90 (refer to FIG. 2) detects the plurality of marks Mk formed on the substrate P using the alignment microscope 62, and according to the detection result (position information of the plurality of marks Mk), the well-known wafer-wide alignment is performed. In the (EGA) method, the arrangement information (including information relating to the position (coordinate value), shape, and the like of the divisional region) of the marker Mk on which the detection target is formed is calculated.
具體來說，於掃描曝光動作中，主控制裝置90(參照圖2)，在該掃描曝光動作之前，使用配置在投影系本體42之+X側之對準顯微鏡62，進行至少形成在曝光對象之區劃區域內之例如4個標記Mk之位置檢測，以算出該區劃區域之排列資訊。主控制裝置90，根據所算出之曝光對象之區劃區域之排列資訊，一邊進行基板P在XY平面內之3自由度方向之精密的定位(基板對準動作)、一邊適當控制照明系20及投影光學系40進行對對象區劃區域之掃描曝光動作(光罩圖案之轉印)。Specifically, in the scanning exposure operation, the main control device 90 (refer to FIG. 2),Before the scanning exposure operation, the alignment microscope 62 disposed on the +X side of the projection system main body 42 is used to detect at least four marks Mk formed in the division area of the exposure target to calculate the division area. Arrange information. The main control unit 90 appropriately controls the illumination system 20 and the projection while performing precise positioning (substrate alignment operation) of the substrate P in the three-degree-of-freedom direction in the XY plane based on the calculated arrangement information of the division regions of the exposure target. The optical system 40 performs a scanning exposure operation (transfer of the mask pattern) on the target division area.
其次，說明用以求出投影光學系40具有之投影系本體42之位置資訊的測量系46(參照圖2)、及用以求出對準系60具有之對準顯微鏡62之位置資訊的測量系68之具體構成。Next, a measurement system 46 (see FIG. 2) for obtaining positional information of the projection system main body 42 of the projection optical system 40, and a measurement for determining the positional information of the alignment microscope 62 of the alignment system 60 will be described. The specific composition of the system 68.
如圖7所示，液晶曝光裝置10具有用以將投影系本體42導向掃描方向之導件80。導件80由與掃描方向平行延伸之構件構成。導件80亦具有引導對準顯微鏡62往掃描方向之移動的功能。又，圖7中，導件80雖係圖示在光罩M與基板P之間，但實際上，導件80係於Y軸方向配置在避開照明光IL之光路的位置。As shown in FIG. 7, the liquid crystal exposure apparatus 10 has a guide 80 for guiding the projection unit body 42 to the scanning direction. The guide 80 is composed of a member extending in parallel with the scanning direction. The guide 80 also has a function of guiding the movement of the alignment microscope 62 in the scanning direction. In addition, in FIG. 7, although the guide 80 is shown between the mask M and the board|substrate P, actually, the guide 80 is arrange|positioned in the Y-axis direction in the position which avoids the optical path of the illumination light IL.
於導件80，固定有至少包含以和掃描方向平行之方向(X軸方向)為週期方向之反射型繞射光柵的標尺82。又，投影系本體42具有與標尺82對向配置之讀頭84。於本實施形態，形成有藉由上述標尺82與讀頭84構成用以求出投影系本體42之位置資訊之測量系46(參照圖2)的編碼器系統。此外，對準顯微鏡62具有與標尺82對向配置之讀頭86。於本實施形態，形成有藉由上述標尺82與讀頭86構成用以求出對準顯微鏡62之位置資訊之測量系68(參照圖2)的編碼器系統。此處，讀頭84、86可分別對標尺82照射編碼器測量用光束，並接收透過標尺82之光束(於標尺82之反射光束)，根據該受光結果輸出對標尺82之相對位置資訊。The guide member 80 is fixed with a scale 82 including at least a reflection type diffraction grating having a periodic direction in a direction (X-axis direction) parallel to the scanning direction. Further, the projection system main body 42 has a read head 84 disposed to face the scale 82. In the present embodiment, an encoder system in which the scale 82 and the read head 84 constitute a measurement system 46 (see FIG. 2) for obtaining positional information of the projection system main body 42 is formed. Further, the alignment microscope 62 has a read head 86 disposed opposite the scale 82. In the present embodiment, an encoder system in which the scale 82 and the read head 86 constitute a measurement system 68 (see FIG. 2) for obtaining the positional information of the alignment microscope 62 is formed. Here, the read heads 84, 86 can respectively illuminate the scale 82 with the encoder measuring beam and receive the beam transmitted through the scale 82 (on the target)The reflected beam of the ruler 82 outputs the relative position information of the scale 82 based on the received light result.
如以上所述，於本實施形態，標尺82構成用以求出投影系本體42之位置資訊的測量系46(參照圖2)、亦構成用以求出對準顯微鏡62之位置資訊的測量系68(參照圖2)。亦即，投影系本體42與對準顯微鏡62係根據以形成在標尺82之繞射光柵所設定之共通的座標系(測長軸)來進行位置控制。又，用以驅動投影系本體42之驅動系44(參照圖2)、及用以驅動對準顯微鏡62之驅動系66(參照圖2)，其要素可一部分共通、亦可以完全獨立之要素構成。As described above, in the present embodiment, the scale 82 constitutes a measurement system 46 (see FIG. 2) for obtaining positional information of the projection system main body 42, and also constitutes a measurement system for obtaining positional information of the alignment microscope 62. 68 (refer to Figure 2). That is, the projection system main body 42 and the alignment microscope 62 perform position control in accordance with a common coordinate system (length measuring axis) set by the diffraction grating formed on the scale 82. Further, the driving system 44 (see FIG. 2) for driving the projection unit body 42 and the driving system 66 (see FIG. 2) for driving the alignment microscope 62 may be partially or completely independent. .
又，構成上述測量系46、68(分別參照圖2)之編碼器系統，可以是測長軸僅為例如X軸方向(掃描方向)之線性(1DOF)編碼器系統、亦可具有多數測長軸。例如，可藉由將讀頭84、86於Y軸方向以既定間隔配置複數個，據以求出投影系本體42、對準顯微鏡62之θ z方向之旋轉量。又，亦可以是於標尺82形成XY2維繞射光柵，於X、Y、θ z方向之3自由度方向具有測長軸之3DOF編碼器系統。再者，亦可作為讀頭84、86使用複數個除繞射光柵之週期方向外亦能進行與標尺面正交之方向之測長之公知的2維讀頭，以求出投影系本體42、對準顯微鏡62之6自由度方向之位置資訊。Further, the encoder system constituting the above-described measurement systems 46 and 68 (refer to FIG. 2, respectively) may be a linear (1DOF) encoder system in which the length measuring axis is only the X-axis direction (scanning direction), for example, and may have a majority length. axis. For example, a plurality of the read heads 84 and 86 can be arranged at a predetermined interval in the Y-axis direction, and the amount of rotation in the θ z direction of the projection system main body 42 and the alignment microscope 62 can be obtained. Further, a 3DOF encoder system having an XY2 dimensional diffraction grating formed on the scale 82 and a length measuring axis in the X, Y, and θz directions may be used. Further, as the read heads 84 and 86, a plurality of well-known two-dimensional read heads capable of performing length measurement in a direction orthogonal to the scale surface in addition to the periodic direction of the diffraction grating may be used to obtain the projection system body 42. Align the position information of the 6 degrees of freedom of the microscope 62.
此處，於本實施形態，投影系本體42及對準顯微鏡62係分別配置在基板P與光罩M間之空間，由於其Y軸方向之位置幾乎相同，因此彼此之可移動範圍是部分重複的。Here, in the present embodiment, the projection system main body 42 and the alignment microscope 62 are disposed in the space between the substrate P and the mask M, respectively, and since the positions in the Y-axis direction are almost the same, the movable range of each is partially repeated. of.
因此，主控制裝置90，在例如掃描曝光動作時將投影系本體42驅動於X軸方向時，會進行避免投影系本體42與對準顯微鏡62碰撞之驅動控制(避免碰撞控制)。換言之，主控制裝置90，係以投影系本體42與對準顯微鏡62於X軸方向不會同時配置在相同位置之方式進行驅動控制，例如進行使對準顯微鏡62從投影系本體42之移動路徑(移動範圍)退避的退避控制。Therefore, when the main control unit 90 drives the projection unit body 42 in the X-axis direction during, for example, the scanning exposure operation, collision between the projection unit body 42 and the alignment microscope 62 is prevented.Drive control (avoid collision control). In other words, the main control device 90 performs drive control so that the projection system main body 42 and the alignment microscope 62 are not disposed at the same position in the X-axis direction, for example, the movement path of the alignment microscope 62 from the projection system main body 42 is performed. (moving range) backoff control for backoff.
以下，針對包含對準顯微鏡62之避免碰撞控制(退避控制)之液晶曝光裝置10於掃描曝光動作時之一動作例，使用圖3(a)~圖4(c)加以說明之。以下之曝光動作(包含對準測量動作)係在主控制裝置90(圖3(a)~圖4(c)中未圖示。參照圖2)之管理下進行。Hereinafter, an operation example of the liquid crystal exposure apparatus 10 including the collision avoidance control (retraction control) of the alignment microscope 62 in the scanning exposure operation will be described with reference to FIGS. 3(a) to 4(c). The following exposure operation (including the alignment measurement operation) is performed under the management of the main control device 90 (not shown in FIGS. 3(a) to 4(c). See FIG. 2).
本實施形態中，曝光順序最先之區劃區域(以下，稱第1照射區域S1)係設定在基板P之-X側且-Y側。又，圖3(a)~圖4(c)中，賦予符號A之矩形區域係表示掃描曝光動作時之投影系本體42之移動範圍(移動路徑)。投影系本體42之移動範圍A係以例如機械方式、及/或電性方式設定。又，賦予在基板P上之區劃區域之符號S2~S4，係代表各自之曝光順序為第2~4個之照射區域。In the present embodiment, the first region of the exposure order (hereinafter referred to as the first irradiation region S1 ) is set on the -X side and the -Y side of the substrate P. Further, in FIGS. 3(a) to 4(c), the rectangular area to which the symbol A is given indicates the moving range (moving path) of the projection system main body 42 during the scanning exposure operation. The range of movement A of the projection system body 42 is set, for example, mechanically and/or electrically. Further, the symbols S2 to S4 which are given to the divisional regions on the substrate P represent the irradiation regions in which the respective exposure orders are the second to fourth.
如圖3(a)所示，在曝光開始前，投影系本體42及對準顯微鏡62之各個，係俯視下配置在第1照射區域S1之-X側。圖3(a)所示之狀態(初期位置)下，投影系本體42與對準顯微鏡62係於X軸方向彼此近接配置。As shown in FIG 3 (a), in the beginning before the exposure, projection system and the body 42 of the alignment microscopes 62 each, based Configuration S -X plan view ofone side of the first irradiation region. In the state (initial position) shown in FIG. 3(a), the projection system main body 42 and the alignment microscope 62 are arranged close to each other in the X-axis direction.
接著，主控制裝置90，如圖3(b)所示，驅動對準顯微鏡62往+X方向。如上所述，本實施形態，由於能將投影系本體42與對準顯微鏡62獨立的驅動控制於X軸方向(掃描方向)，主控制裝置90在使投影系本體42停止之狀態下，僅將對準顯微鏡62驅動於X軸方向。主控制裝置90，一邊使對準顯微鏡62移動於+X方向、一邊在檢測(參照圖3(b)中粗線圓圈)第1照射區域S1內之例如4個標記Mk後，主控制裝置90根據該標記檢測結果算出第1照射區域S1之排列資訊。Next, the main control unit 90 drives the alignment microscope 62 in the +X direction as shown in Fig. 3(b). As described above, in the present embodiment, since the projection system main body 42 and the alignment microscope 62 can be independently controlled to be driven in the X-axis direction (scanning direction), the main control unit 90 can only stop the projection system main body 42. The alignment microscope 62 is driven in the X-axis direction. After the main control unit 90, while the alignment microscope 62 is moved in the + X direction, while the first irradiation area S1 of the 4 markers e.g. Mk detection (see 3 (b) bold line circles in FIG.), The main control unit 90 calculates the arrangement information of the first irradiation region S1 based on the mark detection result.
又，主控制裝置90，如圖3(c)所示，與使用對準顯微鏡62之標記檢測動作並行，與對準顯微鏡62獨立的開始投影系本體42往+X方向之加速。具體而言，主控制裝置90，例如在以對準顯微鏡62檢測第1照射區域S1之+X側之標記Mk的前一刻，開始投影系本體42往+X方向之加速。如此，於本實施形態，在對準顯微鏡62往+X方向之移動(標記檢測動作)後，開始投影系本體42往+X方向之移動(掃描曝光動作)。因此，投影系本體42與對準顯微鏡62在X軸方向之間隔(距離)，與圖3(a)所示之初期位置(對準動作開始前)相較，較寬。又，最好是在對第1照射區域S1之曝光動作開始前，亦即投影系本體42開始等速移動、照明光IL照射到基板P(第1照射區域S1)之前，結束第1照射區域S1內之例如4個標記Mk之檢測，並已根據該4個標記求取第1照射區域S1之排列資訊。主控制裝置90，如圖3(d)所示，將投影系本體42與照明系20之照明系本體22(圖3(d)中未圖示，參照圖1)同步驅動於+X方向，以進行對第1照射區域S1之第1次掃描曝光。Further, as shown in FIG. 3(c), the main control unit 90 starts the projection system main body 42 in the +X direction independently of the alignment microscope 62 in parallel with the mark detecting operation using the alignment microscope 62. Specifically, the main control device 90 starts the acceleration of the projection unit body 42 in the +X direction immediately before the mark Mk on the +X side of the first irradiation region S1 is detected by the alignment microscope 62. As described above, in the present embodiment, after the alignment microscope 62 moves in the +X direction (mark detection operation), the projection system main body 42 is moved in the +X direction (scanning exposure operation). Therefore, the distance (distance) between the projection system main body 42 and the alignment microscope 62 in the X-axis direction is wider than the initial position shown in FIG. 3(a) (before the alignment operation starts). Further, preferably before the exposure of the first irradiation region S1 starts operation, i.e., projection system body 42 starts uniform motion, before the substrate P (the first irradiation region S1) to the illumination light IL is irradiated, the first end within the irradiation area S1 of example 4 detects the mark Mk, and the arrangement has a first region S1 of the information is obtained based on the four marks. As shown in FIG. 3(d), the main control unit 90 drives the projection system main body 42 and the illumination system main body 22 of the illumination system 20 (not shown in FIG. 3(d), see FIG. 1) in the +X direction. The first scanning exposure to the first irradiation region S1 is performed.
又，亦可與對第1照射區域S1之掃描曝光動作並行，將對準顯微鏡62進一步驅動於+X方向，以檢測形成在第4照射區域S4(第1照射區域S1之+X側之區劃區域)內之例如4個標記Mk。主控制裝置90，可根據第4照射區域S4內之標記之檢測結果，更新第1照射區域S1之排列資訊。為求出第1照射區域S1之排列資訊而使用第4照射區域S4內之標記位置資訊，與僅根據設在第1照射區域S1之4個標記Mk來求出排列資訊之情形相較，可求出考慮了更廣範圍之統計上傾向之排列資訊，而提升關於第1照射區域S1之對準精度。Further, also with the irradiation of the first region S1 of the scanning exposure operation in parallel, alignment microscope 62 is further driven in the + X direction, is formed to detect4 (first irradiation region of the irradiation region 4 S1 of S + X For example, four markers Mk in the zoned area on the side. The main control unit 90 updates the arrangement information of the first irradiation area S1 based on the detection result of the mark in the fourth irradiation area S4 . To obtain a first arrangement of the irradiation region S1 mark position information is used within the fourth region S4 information, and only provided in accordance with the irradiation of the first region S1 of the four markers are arranged Mk case information is obtained of the phase In comparison, the alignment information in consideration of a wider range of statistical tendencies can be obtained, and the alignment accuracy with respect to the first irradiation region S1 can be improved.
主控制裝置90，一邊因應上述排列資訊之算出結果進行基板P之微小位置控制、一邊控制照明系20透過光罩M(圖3(d)中未圖示，參照圖1)及投影系本體42將照明光IL投射於基板P上，以該照明光IL在基板P上生成之曝光區域IA內形成光罩圖案之一部分。如上所述，本實施形態中，由於光罩M上生成之照明區域IAM(參照圖1)、及基板P上生成之曝光區域IA，係於Y軸方向分離之一對矩形區域，因此以一次掃描曝光動作轉印至基板P之光罩M之圖案像，是形成在於Y軸方向分離之一對延伸於X軸方向之帶狀區域(一個區劃區域之全面積中之一半面積)內。The main control unit 90 controls the illumination system 20 to pass through the mask M (see FIG. 1 in FIG. 3(d), see FIG. 1) and the projection system main body 42 while performing the minute position control of the substrate P in accordance with the calculation result of the arrangement information. The illumination light IL is projected onto the substrate P, and a part of the reticle pattern is formed in the exposure area IA generated on the substrate P by the illumination light IL. As described above, in the present embodiment, the illumination area IAM (see FIG. 1) generated on the mask M and the exposure area IA generated on the substrate P are separated from the rectangular area in the Y-axis direction. The pattern image of the mask M transferred to the substrate P by the scanning exposure operation is formed in a strip-shaped region (one half area of the entire area of one division region) which is separated in the Y-axis direction and extends in the X-axis direction.
此處，當第1照射區域S1之第1次掃描曝光結束時，投影系本體42通過基板P上、移動至移動範圍A之+X側端部近旁。此時，主控制裝置90進行使對準顯微鏡62從移動範圍A退避之控制。舉一例而言，主控制裝置90，如圖4(a)所示，相對基板P將對準顯微鏡62驅動於-Y方向(下方)以使其退避至投影系本體42之移動範圍A之-Y側。據此，如圖4(b)所示，投影系本體42即不會碰撞對準顯微鏡62，而通過該對準顯微鏡62之+Y側(上方)。主控制裝置90，當確認被驅動到投影系本體42之Y軸方向位置不與對準顯微鏡62之Y軸方向位置重疊之位置時，即如圖3(a)所示，在投影系本體42與對準顯微鏡62彼此不會接觸之位置，以近接配置之方式，將對準顯微鏡62驅動至移動範圍A內。因此，投影系本體42與對準顯微鏡62之X軸方向之間隔，與掃描曝光動作時相較，掃描曝光動作之開始前或結束後之時間點(換言之，投影系本體42往X軸方向之加速開始前或減速結束後)較窄。Here, when the first scanning exposure of the first irradiation region S1 is completed, the projection system main body 42 moves to the vicinity of the +X side end portion of the movement range A through the substrate P. At this time, the main control device 90 performs control for retracting the alignment microscope 62 from the movement range A. For example, as shown in FIG. 4( a ), the main control unit 90 drives the alignment microscope 62 in the −Y direction (downward) with respect to the substrate P so as to retreat to the moving range A of the projection unit body 42 . Y side. Accordingly, as shown in FIG. 4(b), the projection system body 42 does not collide with the alignment microscope 62, but passes through the +Y side (upper side) of the alignment microscope 62. When the main control unit 90 confirms that the position in the Y-axis direction of the projection system main body 42 does not overlap with the position of the alignment microscope 62 in the Y-axis direction, that is, as shown in FIG. 3(a), the projection system main body 42 The alignment microscope 62 is driven into the movement range A in a close-to-close manner at a position where the alignment microscope 62 does not contact each other. Therefore, the interval between the projection system main body 42 and the alignment microscope 62 in the X-axis direction is compared with the time during the scanning exposure operation, and the time before or after the start of the scanning exposure operation (in other words, the projection system body 42 is in the X-axis direction). It is narrower before the start of acceleration or after the end of deceleration.
接著，主控制裝置90，為進行第1照射區域S1之第2次掃描曝光動作，如圖4(b)所示，使基板P及光罩M往-Y方向步進移動(參照圖4(b)之黑箭頭)。此時之基板P之步進移動量係一個區劃區域於Y軸方向之長度之例如1/4之長度。此時，在基板P與光罩M往-Y方向之步進移動中，最好是能以基板P與光罩M之相對位置關係不會變化之方式(或、以可修正該相對位置關係之方式)使其步進移動較佳。Next, the main control unit 90, to perform a first region S 2 of the scanning exposure operation1, FIG. 4 (b), the mask M and the substrate P in the -Y direction, the stepping movement (see FIG. 4 (b) Black arrow). The stepwise movement amount of the substrate P at this time is a length of, for example, 1/4 of the length of one of the division regions in the Y-axis direction. At this time, in the stepwise movement of the substrate P and the mask M in the -Y direction, it is preferable that the relative positional relationship between the substrate P and the mask M does not change (or the relative positional relationship can be corrected). The way to make it step-by-step is better.
以下，如圖4(c)所示，主控制裝置90將投影系本體42驅動於-X方向以進行第1照射區域S1之第2次(復路)之掃描曝光動作。據此，以第1次掃描曝光動作轉印之光罩圖案、與以第2次掃描曝光動作轉印之光罩圖案即在第1照射區域S1內被接合，光罩M之圖案全體被轉印至第1照射區域S1。又，主控制裝置90，使對準顯微鏡62從退避位置回到投影系本體42之移動範圍A內，追循投影系本體42驅動於-X方向。又，亦可如圖4(b)所示的在使基板P及光罩M往-Y方向步進移動後，至第2次掃描曝光開始前，再次進行基板P與光罩M之對準測量，根據該結果進行彼此之位置對準。如此，能提升第1照射區域S1全體之對準精度、進而提升對第1照射區域S1之光罩M之圖案之轉印精度。又，此場合，主控制裝置90，以使暫時退避之對準顯微鏡62回到投影系本體42之-X側，並進行驅動控制使其進行相當於上述圖3(a)~(d)及圖4(a)之動作(惟，係使X軸方向之動作反轉(相反符號)之動作)較佳。Hereinafter, FIG. 4 (c), the main control unit 90 drives the projection system main body 42 in the -X direction to the first irradiation region S for the second time (double path) of thescanning exposure operation. Accordingly, in order to transfer the first mask pattern scan exposure operation, and the mask pattern is transferred to the second scan exposure operation i.e. the first irradiation region S1 is engaged, the pattern of the mask M collectively Transfer to the first irradiation region S1 . Further, the main control unit 90 returns the alignment microscope 62 from the retracted position to the movement range A of the projection system main body 42, and follows the projection system main body 42 to be driven in the -X direction. Further, as shown in FIG. 4(b), after the substrate P and the mask M are stepped in the -Y direction, the alignment of the substrate P and the mask M may be performed again until the start of the second scanning exposure. Measurements are made based on the results. Thus, the first irradiation region can improve accuracy of alignment of all of the1 S, thereby improving the transfer accuracy of the pattern of the reticle1 S M of the first irradiation region. Further, in this case, the main control unit 90 returns the collimator microscope 62 that has been temporarily retracted to the -X side of the projection system main body 42, and performs drive control to perform the above-described FIGS. 3(a) to 3(d). The operation of Fig. 4(a) is preferable (the operation of inverting the operation in the X-axis direction (the opposite sign)).
以下，雖未圖示，但主控制裝置90為對第2照射區域S2(第1照射區域S1之+Y側之區劃區域)進行掃描曝光動作，使基板P往-Y方向步進移動以使第2照射區域S2與光罩M對向。對第2照射區域S2之掃描曝光動作(包含對準顯微鏡62之退避動作)，因於上述對第1照射區域S1之掃描曝光動作相同，故省略其說明。以下，主控制裝置90，一邊適當地進行光罩M之X步進動作與基板P之Y步進動作中之至少一方、一邊進行對第3及第4照射區域S3、S4之掃描曝光動作。此時，主控制裝置90亦是同樣進行對準顯微鏡62之退避控制。又，為使第2照射區域S2以後之區劃區域曝光，亦可在求出該區劃區域之排列資訊時，使用之前之區劃區域之曝光時求出之標記之位置資訊。此外，亦可在進行對第4照射區域S4之對準時，利用上述第1照射區域S1之對準測量結果(EGA計算之結果)。此場合，在使第4照射區域S4與光罩M對向配置時，僅需根據光罩M之標記與基板P之標記Mk之各2點之標記，測量XY平面內之3自由度(X、Y、θ z)方向之位置偏移，可實質縮短第4照射區域S4之對準所需之時間。Hereinafter, although not shown, the main controller 90 performs a scanning exposure operation on the second irradiation region S2 (the region on the +Y side of the first irradiation region S1 ), and moves the substrate P in the -Y direction. The second irradiation region S2 is opposed to the mask M. Of the second region S2 of the scanning exposure operation (operation 62 comprising retracting the alignment of Xian Weijing), due to the same for the first irradiation region S1 of the scanning exposure operation, so the description thereof is omitted. In the following, the main control unit 90 performs scanning exposure of the third and fourth irradiation regions S3 and S4 while appropriately performing at least one of the X stepping operation of the mask M and the Y stepping operation of the substrate P. action. At this time, the main control unit 90 also performs the retraction control of the alignment microscope 62 in the same manner. And, when the second irradiation region2 after the division of the exposure area S, also obtained in the division area arrangement information, obtains the location information of the mark when exposed before the division of the area to use. Further, when the alignment of the fourth irradiation region S4 is performed, the alignment measurement result of the first irradiation region S1 (the result of the EGA calculation) may be used. In this case, when the fourth irradiation region S4 and the mask M are arranged to face each other, it is only necessary to measure three degrees of freedom in the XY plane based on the marks of the mask M and the two points of the mark Mk of the substrate P ( The positional shift in the X, Y, and θ z directions can substantially shorten the time required for the alignment of the fourth irradiation region S4.
根據以上說明之一實施形態之液晶曝光裝置10，由於能獨立控制對準顯微鏡62及投影系本體42之掃描方向(X軸方向)之驅動控制(位置及速度)，因此能在投影系本體42往掃描方向之移動(加速)之前，使用對準顯微鏡62進行標記Mk之檢測動作，在所需之所有標記Mk之檢測結束前開始投影系本體42往掃描方向之加速(亦即，掃描曝光動作)。因此，能降低基板P之曝光處理所需之一連串的處理時間(週期時間)。又，在未進行掃描曝光動作時，例如在對準動作之開始前(投影系本體42之加速前)及掃描曝光動作結束後(投影系本體42之減速後)，如圖3(a)所示，可將對準顯微鏡62與投影系本體42近接配置。因此，能抑制用以在X軸方向進行掃描曝光所需之裝置尺寸(曝光裝置之覆蓋區)。此外，由於能使對準顯微鏡62退避掃描曝光動作時投影系本體42之移動範圍A，因此能避免對準顯微鏡62與投影系本體42之碰撞。According to the liquid crystal exposure apparatus 10 of the embodiment described above, since the driving control (position and speed) of the scanning direction (X-axis direction) of the alignment microscope 62 and the projection system main body 42 can be independently controlled, the projection system body 42 can be used. Before the movement (acceleration) in the scanning direction, the detection operation of the mark Mk is performed using the alignment microscope 62, and the acceleration of the projection body 42 in the scanning direction is started before the detection of all the marks Mk required is completed (that is, the scanning exposure operation is performed). ). Therefore, it is possible to reduce the series of processing time (cycle time) required for the exposure processing of the substrate P. Further, when the scanning exposure operation is not performed, for example, before the start of the alignment operation (before the acceleration of the projection system main body 42) and after the scanning exposure operation is completed (after the deceleration of the projection system main body 42), as shown in Fig. 3(a) As shown, the alignment microscope 62 can be placed in close proximity to the projection unit body 42. Therefore, it can be suppressed for use in XThe size of the device required for scanning exposure in the axial direction (the coverage area of the exposure device). Further, since the alignment microscope A can be retracted from the movement range A of the projection system main body 42 during the scanning exposure operation, collision between the alignment microscope 62 and the projection system main body 42 can be avoided.
此處，照明系20、光罩載台裝置30、投影光學系40、基板載台裝置50、對準系60可以被模組化。以下，將照明系20稱照明系模組12M、光罩載台裝置30稱光罩載台模組14M、投影光學系40稱投影光學系模組16M、基板載台裝置50稱基板載台模組18M、對準系60稱對準系模組20M。以下，雖適當的稱為「各模組12M~20M」，但係藉由載置於對應之架台28A~28E上，而將彼此在物理上獨立配置。Here, the illumination system 20, the mask stage device 30, the projection optical system 40, the substrate stage device 50, and the alignment system 60 can be modularized. Hereinafter, the illumination system 20 is referred to as an illumination system module 12M, the mask stage device 30 is referred to as a mask stage module 14M, the projection optical system 40 is referred to as a projection optical system module 16M, and the substrate stage device 50 is referred to as a substrate stage module. Group 18M, alignment system 60 is referred to as alignment system module 20M. Hereinafter, although it is appropriately referred to as "each module 12M to 20M", it is physically disposed independently of each other by being placed on the corresponding gantry 28A to 28E.
因此，如圖10所示，於液晶曝光裝置10，可將上述各模組12M~20M(圖10中，例如係基板載台模組18M)中之任意(1個、或複數個)模組，與其他模組獨立的加以更換。此時，更換對象之模組係與支承該模組之架台28A~28E(圖10中係架台28E)一體更換。Therefore, as shown in FIG. 10, in the liquid crystal exposure apparatus 10, any one (one or plural) modules of the above-described respective modules 12M to 20M (for example, the substrate stage module 18M in FIG. 10) can be used. Replace it with other modules independently. At this time, the module to be replaced is integrally replaced with the gantry 28A to 28E (the cradle 28E in Fig. 10) supporting the module.
在上述各模組12M~20M之更換動作時，作為更換對象之各模組12M~20M(及支承該模組之架台28A~28E)係沿地面26移動於X軸方向。因此，於架台28A~28E，以設有例如能在地面26上容易移動之例如車輪、或氣浮式裝置等較佳。如上所述，於本實施形態之液晶曝光裝置10，由於能使各模組12M~20M中之任意模組個別地與其他模組容易地分離，因此保養維修性優異。又，圖10中，雖係顯示基板載台模組18M與架台28E一起相對其他要素(投影光學系模組16M等)往+X方向(紙面內側)移動，據以與他要素分離之態樣，但移動對象模組(及架台)之移動方向不限定於此，例如可以是-X方向(紙面前)、亦可以是+Y方向(紙面上方)。此外，亦可設置用以確保各架台28A~28E在地面26上之設置後位置再現性的定位裝置。該定位裝置可設於各架台28A~28E，亦可藉由設在各架台28A~28E之構件與設在地面26之構件的協力動作，來再現各架台28A~28E之設置位置。During the replacement operation of each of the modules 12M to 20M, the modules 12M to 20M (and the gantry 28A to 28E supporting the module) to be replaced are moved along the ground 26 in the X-axis direction. Therefore, it is preferable that the gantry 28A to 28E are provided with, for example, a wheel or an air floating type device which can be easily moved on the floor 26, for example. As described above, in the liquid crystal exposure apparatus 10 of the present embodiment, since any of the modules 12M to 20M can be easily separated from the other modules individually, the maintenance and repairability is excellent. In addition, in FIG. 10, the substrate stage module 18M and the gantry 28E are moved in the +X direction (inside the paper surface) with respect to other elements (the projection optical system module 16M, etc.), and are separated from the other elements. However, the moving direction of the moving object module (and the gantry) is not limited thereto, and may be, for example, -X direction (in front of the paper) or +Y direction (paper)Above the face). Further, a positioning device for ensuring the positional reproducibility of each of the stands 28A to 28E on the floor 26 may be provided. The positioning device can be provided on each of the stands 28A to 28E, and the position of each of the stands 28A to 28E can be reproduced by the cooperative action of the members provided on the respective stands 28A to 28E and the members provided on the floor 26.
又，本實施形態之液晶曝光裝置10，由於係可獨立分離上述各模組12M~20M之構成，因此能個別地將各模組12M~20M加以升級。所謂升級，除例如用以因應曝光對象基板P之大型化等的升級外，亦包含雖然基板P大小相同，但將各模組12M~20M更換為性能更佳者之情形。Further, in the liquid crystal exposure apparatus 10 of the present embodiment, since the respective modules 12M to 20M can be independently separated, the respective modules 12M to 20M can be individually upgraded. In addition to the upgrade of the substrate P to be exposed, for example, the upgrade includes the case where the size of the substrate P is the same, but the modules 12M to 20M are replaced with better performance.
此處，例如在使基板P大型化時，僅是基板P之面積(本實施形態中，係X軸及Y軸方向之尺寸)變大，通常基板P之厚度(Z軸方向之尺寸)實質上不會變化。因此，例如在因應基板P之大型化而將液晶曝光裝置10之基板載台模組18M加以升級時，如圖10所示，取代基板載台模組18M，新插入之基板載台模組18AM及支承基板載台模組18AM之架台28G，雖然X軸及/或Y軸方向之尺寸會改變，但Z軸方向之尺寸實質上不會變化。同樣的，光罩載台模組14M亦不會因為因應光罩M之大型化之升級，使Z軸方向之尺寸實質變化。Here, for example, when the substrate P is increased in size, only the area of the substrate P (the size in the X-axis and the Y-axis direction in the present embodiment) becomes large, and the thickness of the substrate P (the size in the Z-axis direction) is substantially It won't change. Therefore, for example, when the substrate stage module 18M of the liquid crystal exposure apparatus 10 is upgraded in response to the enlargement of the substrate P, as shown in FIG. 10, the substrate stage module 18AM newly inserted is replaced by the substrate stage module 18M. The gantry 28G supporting the substrate stage module 18AM has a size that changes in the X-axis and/or the Y-axis direction, but does not substantially change in size in the Z-axis direction. Similarly, the reticle stage module 14M does not substantially change the size of the Z-axis direction in response to an increase in the size of the reticle M.
又，例如為擴大照明區域IAM、曝光區域IA(分別參照圖1等)，可藉由增加照明系模組12M所具有之照明光學系之數量、投影光學系模組16M所具有之投影透鏡模組之數量，來將照明系模組12M、投影光學系模組16M分別加以升級。升級後之照明系模組、投影光學系模組(皆未未圖示)與升級前相較，僅X軸及/或Y軸方向之尺寸變化，Z軸方向之尺寸實質上不會變化。Further, for example, in order to enlarge the illumination area IAM and the exposure area IA (see FIG. 1 and the like, respectively), the number of illumination optical systems included in the illumination system module 12M and the projection lens mode of the projection optical system module 16M can be increased. The number of groups is used to upgrade the illumination system module 12M and the projection optical system module 16M, respectively. The upgraded illumination system module and the projection optical system module (all not shown) have a size change only in the X-axis and/or Y-axis directions compared with that before the upgrade, and the dimensions in the Z-axis direction do not substantially change.
因此，本實施形態之液晶曝光裝置10，支承各模組12M~20M之架台28A~28E、及支承升級後各模組之架台(參照支承圖10所示之基板載台模組18AM之架台28G)，其Z軸方向之尺寸是固定的。此處，所謂尺寸固定，係指更換前之架台與更換後之架台，其Z軸方向之尺寸共通，亦即支承功能相同之模組之架台之Z軸方向尺寸大致一定。如此，本實施形態之液晶曝光裝置10，由於各架台28A~28E之Z軸方向尺寸固定，因此能謀求設計各模組時之時間縮短。Therefore, in the liquid crystal exposure apparatus 10 of the present embodiment, the gantry 28A to 28E of each of the modules 12M to 20M and the gantry supporting the modules after the upgrade are supported (refer to the gantry 28G of the substrate stage module 18AM shown in FIG. ), the size of the Z-axis direction is fixed. Here, the term "fixed size" refers to the frame before replacement and the frame after replacement, and the dimensions in the Z-axis direction are common, that is, the dimensions of the gantry of the module having the same function are substantially constant in the Z-axis direction. As described above, in the liquid crystal exposure apparatus 10 of the present embodiment, since the dimensions of the gantry 28A to 28E in the Z-axis direction are fixed, the time required to design each module can be shortened.
又，於液晶曝光裝置10，由於基板P之曝光面、及光罩M之圖案面分別與重力方向平行(所謂的縱列配置)，因此可將照明系模組12M、光罩載台模組14M、投影光學系模組16M及基板載台模組18M之各模組，在地面26面上直列設置。如此，由於上述各模組不會有彼此自重之作用，因此，無需如將例如相當於上述各模組之基板載台裝置、投影光學系、光罩載台裝置及照明系於重力方向重疊配置之習知曝光裝置般，設置支承各要素之高剛性主機架(機體)。此外，由於構造簡單，裝置之設置工程、各模組12M~20M之維修保養作業、更換作業等皆能容易、且在短時間內進行。又，由於能沿地面26配置上述各模組，因此能降低裝置全體之高度。如此，可使收容上述各模組之腔室小型化，謀求成本降低且縮短設置工期。Further, in the liquid crystal exposure apparatus 10, since the exposure surface of the substrate P and the pattern surface of the mask M are parallel to the gravity direction (so-called column arrangement), the illumination system module 12M and the mask carrier module can be used. The modules of the 14M, the projection optical system module 16M, and the substrate stage module 18M are arranged in series on the ground 26 surface. In this way, since the respective modules do not have their own weight, it is not necessary to superimpose the substrate stage device, the projection optical system, the mask stage device, and the illumination system corresponding to the respective modules in the gravity direction. As in the conventional exposure apparatus, a high-rigidity main frame (body) that supports each element is provided. In addition, due to the simple structure, the installation of the device, the maintenance work of each module 12M~20M, the replacement work, etc. can be easily and in a short time. Moreover, since each of the above modules can be disposed along the floor 26, the height of the entire apparatus can be reduced. In this way, the chamber for accommodating the above-described modules can be miniaturized, and the cost can be reduced and the installation period can be shortened.
又，以上說明之一實施形態之構成可適當變更。例如，上述實施形態中，對準顯微鏡62雖係相對投影系本體42之移動範圍A往-Y側移動以進行退避動作，但只要能退避至投影系本體42之移動範圍A之外側的話，對準顯微鏡62之退避方向並不限於此，例如可如圖5所示之第1變形例般，相對投影系本體42之移動範圍A往與掃描方向平行之方向(X軸方向)退避。同樣的，雖未圖示，但對準顯微鏡62之退避方向，可以是例如相對投影系本體42之移動範圍A往+Y(上)側、或+Z側(光罩側)、-Z側(基板側)。Further, the configuration of one embodiment of the above description can be changed as appropriate. For example, in the above-described embodiment, the alignment microscope 62 moves to the -Y side with respect to the movement range A of the projection system main body 42 to perform the retracting operation, but if it can be retracted to the outside of the movement range A of the projection system main body 42, The retracting direction of the quasi-microscope 62 is not limited thereto, and may be, for example, the first one as shown in FIG.In the modified example, the movement range A with respect to the projection system main body 42 is retracted in a direction (X-axis direction) parallel to the scanning direction. Similarly, although not shown, the retracting direction of the alignment microscope 62 may be, for example, the movement range A of the projection system main body 42 to the +Y (upper) side, or the +Z side (mask side), the -Z side. (substrate side).
又，上述實施形態(及第1變形例)中，對準顯微鏡62雖係往相對投影系本體42行進方向之正交方向、或平行方向移動以進行退避動作，但退避動作時之對準顯微鏡62之移動方向不限於此，例如可如圖6所示之第2變形例般，為θ z方向(或其他旋轉方向)。此外，當進行使對準顯微鏡62往X軸方向以外之方向退避之控制時，投影系本體42及對準顯微鏡62對Y軸方向之相對位置關係有可能與初期位置不同。此時，主控制裝置90，最好是在每一次進行對準顯微鏡62之退避動作時，進行關於投影系本體42與對準顯微鏡62之相對位置(相對座標)的校準較佳。再者，上述實施形態(及第1變形例)中，雖係將對準顯微鏡62之迴避控制在不是基板P上之位置進行，但亦可在基板P上之位置、也就是對準顯微鏡62之Y軸方向位置及X軸方向位置與基板P之Y軸方向位置及X軸方向位置重疊之位置進行。Further, in the above-described embodiment (and the first modification), the alignment microscope 62 moves in the orthogonal direction or the parallel direction with respect to the traveling direction of the projection system main body 42 to perform the retracting operation, but the alignment microscope during the retracting operation The moving direction of 62 is not limited thereto, and may be, for example, the θ z direction (or other rotation direction) as in the second modification shown in FIG. 6 . Further, when the control for retracting the alignment microscope 62 in the direction other than the X-axis direction is performed, the relative positional relationship between the projection system main body 42 and the alignment microscope 62 in the Y-axis direction may be different from the initial position. At this time, it is preferable that the main control unit 90 performs calibration of the relative position (relative coordinates) of the projection system main body 42 and the alignment microscope 62 every time the retracting operation of the alignment microscope 62 is performed. Further, in the above-described embodiment (and the first modification), the avoidance control of the alignment microscope 62 is performed at a position other than the substrate P, but the position on the substrate P, that is, the alignment microscope 62 may be used. The position in the Y-axis direction and the position in the X-axis direction are performed at positions overlapping the positions of the substrate P in the Y-axis direction and the X-axis direction.
又，上述實施形態(及第1、第2變形例)中，雖係針對用以驅動照明系20之照明系本體22的驅動系24、用以驅動光罩載台裝置30之載台本體32的驅動系34、用以驅動投影光學系40之投影光學系本體42的驅動系44、用以驅動基板載台裝置50之載台本體52的驅動系54、及用以驅動對準系60之對準顯微鏡62的驅動系66(分別參照圖2)分別為線性馬達之情形做了說明，但用以驅動上述照明系本體22、載台本體32、投影光學系本體42、載台本體52及對準顯微鏡62之致動器之種類不限於此，可適當變更，例如可適當使用進給螺桿(滾珠螺桿)裝置、皮帶驅動裝置等之各種致動器。Further, in the above-described embodiments (and the first and second modifications), the drive system 24 for driving the illumination system main body 22 of the illumination system 20 and the stage main body 32 for driving the photomask stage device 30 are provided. a drive system 34, a drive system 44 for driving the projection optical system body 42 of the projection optical system 40, a drive system 54 for driving the stage body 52 of the substrate stage device 50, and a drive system 60 for driving the alignment system 60 The case where the drive system 66 of the alignment microscope 62 (see FIG. 2, respectively) is a linear motor is described, but the illumination system body 22, the stage body 32, and the projection are driven.The type of the actuator of the optical system main body 42, the stage main body 52, and the alignment microscope 62 is not limited thereto, and can be appropriately changed. For example, various actuators such as a feed screw (ball screw) device and a belt drive device can be suitably used. .
又，上述實施形態(及第1、第2變形例)中，投影系本體42與對準顯微鏡62雖係共用往掃描方向之驅動系之一部分(例如線性馬達、導件等)，但只要能個別驅動投影系本體42與對準顯微鏡62的話，不限於此，用以驅動對準顯微鏡62之驅動系66、與用以驅動投影光學系40之投影系本體42之驅動系44可以是完全獨立的構成。亦即，如圖8所示之曝光裝置10A般，可將投影光學系40A具有之投影光學系本體42與對準系60A具有之對準顯微鏡62，以Y位置彼此不重複之方式配置，以使用以驅動對準顯微鏡62之驅動系66(例如包含線性馬達、導件等)與用以驅動投影系本體42之驅動系44(例如包含線性馬達、導件等)，成為完全獨立之構成。此場合，藉由在曝光對象之區劃區域之掃描曝光動作開始前，使基板P往Y軸方向步進移動(往復移動)，據以進行該區劃區域之對準測量。又，亦可如圖9所示之曝光裝置10B般，藉由將用以驅動投影光學系40B具有之投影光學系本體42的驅動系44(例如包含線性馬達、導件等)、與將用以驅動對準系60B具有之對準顯微鏡62的驅動系66(例如包含線性馬達、導件等)配置成Y位置不重複，使驅動系44與驅動系66成為完全獨立之構成。Further, in the above-described embodiment (and the first and second modifications), the projection system main body 42 and the alignment microscope 62 share a part of the driving system in the scanning direction (for example, a linear motor, a guide, etc.), but The driving system body 42 and the alignment microscope 62 are not limited thereto, and the driving system 66 for driving the alignment microscope 62 and the driving system 44 for driving the projection system body 42 of the projection optical system 40 may be completely independent. Composition. That is, as in the exposure apparatus 10A shown in FIG. 8, the projection optical system main body 42 of the projection optical system 40A and the alignment microscope 62 of the alignment system 60A can be arranged so that the Y positions are not overlapped with each other. A drive train 66 (e.g., including a linear motor, a guide, etc.) for driving the alignment microscope 62 and a drive train 44 (e.g., including a linear motor, guide, etc.) for driving the projection unit body 42 are used to be completely independent. In this case, the substrate P is stepwise moved (reciprocated) in the Y-axis direction before the scanning exposure operation of the region to be exposed is started, whereby the alignment measurement of the region is performed. Further, as in the exposure apparatus 10B shown in FIG. 9, the drive system 44 (for example, including a linear motor, a guide, etc.) for driving the projection optical system main body 42 of the projection optical system 40B may be used. The drive train 66 (for example, including a linear motor, a guide, etc.) that drives the alignment microscope 60B with the alignment microscope 60 is disposed such that the Y position is not repeated, so that the drive train 44 and the drive train 66 are completely independent.
又，上述實施形態(及第1、第2變形例)中，雖係針對用以進行照明系20之照明系本體22之位置測量的測量系26、用以進行光罩載台裝置30之載台本體32之位置測量的測量系36、用以進行投影光學系40之投影光學系本體42之位置測量的測量系46、用以進行基板載台裝置50之載台本體52之位置測量的測量系56、及用以進行對準系60之對準顯微鏡62之位置測量的測量系68(分別參照圖2)，皆包含線性編碼器之情形做了說明，但用以進行上述照明系本體22、載台本體32、投影系投影光學系本體42、載台本體52及對準顯微鏡62之位置測量之測量系統之種類不限於此，可適當變更，例如可適當使用光干涉儀、或並用線性編碼器與光干涉儀之測量系等的各種測量系統。Further, in the above-described embodiments (and the first and second modifications), the measurement system 26 for measuring the position of the illumination system main body 22 of the illumination system 20 is used for carrying the photomask stage device 30. A measurement system 36 for position measurement of the stage body 32 for performing a projection optical systemA measurement system 46 for position measurement of the projection optical system body 42 of 40, a measurement system 56 for performing position measurement of the stage body 52 of the substrate stage device 50, and an alignment microscope 62 for performing the alignment system 60 The position measurement measurement system 68 (see FIG. 2, respectively) includes a linear encoder. However, the illumination system main body 22, the stage main body 32, the projection system projection optical system main body 42, and the stage body are used. The type of the measurement system for measuring the position of the alignment microscope 62 and the position of the alignment microscope 62 is not limited thereto, and can be appropriately changed. For example, various measurement systems such as an optical interferometer or a measurement system using a linear encoder and an optical interferometer can be used as appropriate.
又，上述實施形態(及第1、第2變形例)中，在投影系本體42之+X側配置有具一對檢測視野之一組可動式對準顯微鏡62，但可動式對準顯微鏡之數量不限定於此。例如可在投影系本體42之+X側、及-X側(掃描方向之一側及另一側)分別配置對準顯微鏡62。此場合，在對各區劃區域進行第2次掃描曝光動作(亦即，使投影系本體42往-X方向移動來進行之掃描曝光動作)之前，藉由使用-X側之對準顯微鏡62檢測標記Mk，即能在抑制時間損失之同時、提升第1照射區域S1全體之對準精度、進而提升光罩M之圖案對第1照射區域S1之轉印精度。Further, in the above-described embodiment (and the first and second modifications), a pair of movable alignment microscopes 62 having a pair of detection fields of view are disposed on the +X side of the projection system main body 42, but the movable alignment microscope is The number is not limited to this. For example, the alignment microscope 62 can be disposed on the +X side and the -X side (one side and the other side in the scanning direction) of the projection system main body 42. In this case, the second scanning exposure operation (that is, the scanning exposure operation in which the projection system main body 42 is moved in the -X direction) is performed on each of the division regions, and the alignment microscope 62 is used to detect the alignment. Mk marker, i.e., capable of simultaneously inhibiting the loss of time, lifting the first irradiation region S1 all of the alignment accuracy, and thus enhance the accuracy of the first irradiation area S of the transfer of the pattern of the mask M1 pair.
又，上述實施形態(及包含各變形例。以下同)中，雖係在第1照射區域S1之掃描曝光後，進行設定在該第1照射區域S1之+Y(上)側之第2照射區域S2之掃描曝光，但不限於此，亦可在第1照射區域S1之掃描曝光之下一個進行第4照射區域S4之掃描曝光。此場合，例如藉由與第1照射區域S1對向之光罩、與第4照射區域S4對向之光罩(合計2片光罩)之使用，可連續進行第1及第4照射區域S1、S4之掃描曝光。此外，亦在第1照射區域S1之掃描曝光後使光罩M往+X方向步進移動以進行第4照射區域S4之掃描曝光。Further, the above-described embodiment (and comprising the respective modification. Hereinafter the same) and, although the system after the first irradiation region S scan ofan exposure, a first side of the set of the first region S1 of the + Y (on) 2 scanning the irradiation region S2 of the exposure, but is not limited thereto, may be a fourth region S4 scanning exposure of the first irradiation area under the S1 scan exposure. This case, for example, by irradiating the first region S1 facing the mask, and the fourth irradiation area S4 of the pair of the mask (reticle 2 in total) of use, can be performed continuously irradiated with the first and second 4 Scanning exposure of areas S1 , S4 . Further, also after the first irradiation region of the S1 scan exposure mask M is moved toward the + X direction to perform the stepping of the irradiation area S 4 of4 scanning exposure.
又，於上述實施形態，標記Mk係形成在各區劃區域(第1~第4照射區域S1~S4)內，但不限於此，亦可形成在相鄰區劃區域間之區域(所謂之刻劃線)內。Further, in the above embodiment, the mark is formed based Mk, but is not limited thereto, and may be formed(1 ~ S4 of the first to fourth irradiation area S) in each of the divisional areas in the region between the neighboring divisional areas (the so-called Marked inside).
又，於上述實施形態，雖係將於Y軸方向分離之一對照明區域IAM、曝光區域IA分別生成在光罩M、基板P上(參照圖1)，但照明區域IAM及曝光區域IA之形狀、長度不限於此，可適當變更。例如，照明區域IAM、曝光區域IA之Y軸方向長度，可分別與光罩M之圖案面、基板P上之一個區劃區域之Y軸方向長度相等。此場合，對各區劃區域進行一次掃描曝光動作即結束光罩圖案之轉印。或者，照明區域IAM、曝光區域IA，可以是Y軸方向長度分別為光罩M之圖案面、基板P上一個區劃區域之Y軸方向長度之一半的一個區域。此場合，與上述實施形態同樣的，需對一個區劃區域進行二次掃描曝光動作，以進行接合曝光。Further, in the above embodiment, the illumination region IAM and the exposure region IA are respectively formed on the mask M and the substrate P in the Y-axis direction (see FIG. 1), but the illumination region IAM and the exposure region IA are The shape and length are not limited thereto, and can be appropriately changed. For example, the lengths of the illumination area IAM and the exposure area IA in the Y-axis direction may be equal to the length of the pattern surface of the mask M and the one of the division areas on the substrate P in the Y-axis direction. In this case, the transfer of the mask pattern is completed by performing a scanning exposure operation for each of the division regions. Alternatively, the illumination area IAM and the exposure area IA may be one area in which the length in the Y-axis direction is one half of the length of the mask surface of the mask M and one of the division areas of the substrate P in the Y-axis direction. In this case, similarly to the above-described embodiment, it is necessary to perform a secondary scanning exposure operation on one of the divided regions to perform joint exposure.
又，如上述實施形態般，在為了將一個光罩圖案形成在區劃區域而使投影系本體42往復以進行接合曝光時，可將具有互異之檢測視野之往路用及復路用對準顯微鏡於掃描方向(X方向)配置在投影系本體42之前後。此場合，可使用往路用(第1次曝光動作用)之對準顯微鏡檢測區劃區域四角之標記Mk，使用復路用(第2次曝光動作用)之對準顯微鏡檢測接合部近旁之標記Mk。此處，所謂接合部，係指以往路之掃描曝光曝光之區域(圖案轉印之區域)與以復路之掃描曝光曝光之區域(圖案轉印之區域)的接合部分。作為接合部近旁之標記Mk，可預先於基板P形成標記Mk、亦可將曝光完成之圖案作為標記Mk。Further, as in the above-described embodiment, when the projection system main body 42 is reciprocated to perform the joint exposure in order to form one mask pattern in the division region, the alignment and reversing alignment microscope having the different detection fields can be used. The scanning direction (X direction) is arranged before and after the projection system body 42. In this case, the mark Mk at the four corners of the division area can be detected by the alignment microscope for the road (for the first exposure operation), and the mark Mk near the joint portion can be detected using the alignment microscope for the return path (for the second exposure operation). Here, the joint portion refers to a joint portion of a region (a region where a pattern is transferred) of a conventional scanning exposure exposure region and a region (a region where a pattern is transferred) which is exposed by scanning exposure exposure. As the mark Mk in the vicinity of the joint portion, the mark Mk may be formed in advance on the substrate P, or the pattern in which the exposure is completed may be used as the mark Mk.
又，於上述各實施形態，於照明系20使用之光源、及從該光源照射之照明光IL之波長並無特別限定，可以是例如ArF準分子雷射光(波長193nm)、KrF準分子雷射光(波長248nm)等之紫外光、或F2雷射光(波長157nm)等真空紫外光。Further, in the above embodiments, the light source used in the illumination system 20 and the wavelength of the illumination light IL emitted from the light source are not particularly limited, and may be, for example, ArF excimer laser light (wavelength: 193 nm) or KrF excimer laser light. Vacuum ultraviolet light such as ultraviolet light (wavelength 248 nm) or F2 laser light (wavelength 157 nm).
又，於上述實施形態，雖係包含光源之照明系本體22被驅動於掃描方向，但不限於此，亦可與例如特開2000-12422號公報所揭示之曝光裝置同樣的，將光源固定，僅使照明光IL掃描於掃描方向。Further, in the above-described embodiment, the illumination system main body 22 including the light source is driven in the scanning direction. However, the present invention is not limited thereto, and the light source may be fixed in the same manner as the exposure apparatus disclosed in Japanese Laid-Open Patent Publication No. 2000-12422. Only the illumination light IL is scanned in the scanning direction.
又，照明區域IAM、曝光區域IA，於上述實施形態中係形成為延伸於Y軸方向之帶狀，但不限於此，可例如美國專利第5,729,331號說明書所揭示，將配置成鋸齒狀之複數個區域加以組合。Further, the illumination area IAM and the exposure area IA are formed in a strip shape extending in the Y-axis direction in the above embodiment, but are not limited thereto, and may be arranged in a zigzag form as disclosed in the specification of U.S. Patent No. 5,729,331. Areas are combined.
又，於上述各實施形態，光罩M及基板P雖係配置成與水平面正交(所謂的縱列配置)，但不限於此，亦可將光罩M及基板P配置成與水平面平行。此場合，照明光IL之光軸與重力方向大致平行。Further, in the above embodiments, the mask M and the substrate P are arranged to be orthogonal to the horizontal plane (so-called columnar arrangement). However, the present invention is not limited thereto, and the mask M and the substrate P may be arranged in parallel with the horizontal plane. In this case, the optical axis of the illumination light IL is substantially parallel to the direction of gravity.
又，雖係在掃描曝光動作時根據對準測量之結果進行基板P之XY平面內之微幅定位，但亦可與此並行，於掃描曝光動作前(或與掃描曝光動作並行)求出基板P之面位置資訊，於掃描曝光動作中進行基板P之面位置控制(所謂的自動對焦控制)。Further, although the micro-positioning in the XY plane of the substrate P is performed based on the result of the alignment measurement during the scanning exposure operation, the substrate may be obtained before (or in parallel with the scanning exposure operation) in parallel with the scanning exposure operation. The position information of the surface of the P is controlled by the surface position of the substrate P during the scanning exposure operation (so-called autofocus control).
又，曝光裝置之用途不限於將液晶顯示元件圖案轉印至方型玻璃板之液晶用曝光裝置，亦能廣泛地適用於例如有機EL(Electro-Luminescence)面板製造用之曝光裝置、半導體製造用之曝光裝置、用以製造薄膜磁頭、微機器及DNA晶片等之曝光裝置。此外，不僅是半導體元件等之微元件，亦能適用於為製造於光曝光裝置、EUV曝光裝置、X線曝光裝置及電子線曝光裝置等使用之光罩或標線片，將電路圖案轉印至玻璃基板或矽晶圓等之曝光裝置。Further, the use of the exposure apparatus is not limited to the liquid crystal display device for transferring the liquid crystal display element pattern to the square glass plate, and can be widely applied to, for example, an exposure apparatus for manufacturing an organic EL (Electro-Luminescence) panel, or a semiconductor manufacturing apparatus. An exposure apparatus, an exposure apparatus for manufacturing a thin film magnetic head, a micromachine, and a DNA wafer. In addition, it can be applied not only to micro components such as semiconductor elements but also to optical exposure devices, EUV exposure devices,A photomask or a reticle used in an X-ray exposure apparatus and an electron beam exposure apparatus transfers the circuit pattern to an exposure apparatus such as a glass substrate or a tantalum wafer.
又，曝光對象之物體不限於玻璃板，亦可以是例如晶圓、陶瓷基板、薄膜構件、或光罩母板等其他物體。此外，在曝光對象物係平面顯示器用基板之情形時，該基板之厚度並無特別限定，亦包含例如片狀物(具可撓性之片狀構件)。又，本實施形態之曝光裝置，在曝光對象物係一邊長度、或對角長在500mm以上之基板時尤為有效。此外，在曝光對象之基板為具有可撓性之片狀(片材)之情形時，該片材可以是形成為捲筒狀。此場合，無需依賴載台裝置之步進動作，只要使捲筒旋轉(捲繞)即能容易的相對照明區域(照明光)變更(步進移動)曝光對象之區劃區域。Further, the object to be exposed is not limited to a glass plate, and may be another object such as a wafer, a ceramic substrate, a film member, or a mask mother plate. Further, in the case of exposing a substrate for a planar display device, the thickness of the substrate is not particularly limited, and includes, for example, a sheet (a flexible sheet member). Further, the exposure apparatus of the present embodiment is particularly effective when the length of the object to be exposed is large or the substrate having a diagonal length of 500 mm or more. Further, when the substrate to be exposed is in the form of a flexible sheet (sheet), the sheet may be formed into a roll shape. In this case, it is not necessary to rely on the stepping operation of the stage device, and the area of the exposure target can be easily changed (stepwise movement) with respect to the illumination area (illumination light) by rotating (winding) the reel.
液晶顯示元件(或半導體元件)等之電子元件，係經由進行元件之功能、性能設計的步驟、根據此設計步驟製作光罩(或標線片)的步驟、製作玻璃基板(或晶圓)的步驟、以上述各實施形態之曝光裝置及其曝光方法將光罩(標線片)圖案轉印至玻璃基板的微影步驟、使曝光後之玻璃基板顯影的顯影步驟、將殘存有光阻之部分以外部分之露出構件藉蝕刻加以去除的蝕刻步驟、將蝕刻完成後無需之光阻加以除去的光阻除去步驟、元件組裝步驟、檢査步驟等而被製造。此場合，於微影步驟使用上述實施形態之曝光裝置實施前述曝光方法，於玻璃基板上形成元件圖案，因此能以良好生產性製造高積體度之元件。An electronic component such as a liquid crystal display element (or a semiconductor element) is a step of fabricating a photomask (or a reticle) according to the steps of performing the function and performance design of the component, and fabricating a glass substrate (or wafer). The step of transferring the mask (the reticle) pattern to the lithography step of the glass substrate, the developing step of developing the exposed glass substrate, and the remaining photoresist by the exposure apparatus and the exposure method thereof according to the above embodiments The exposed portion of the portion other than the portion is etched by etching, the photoresist removal step for removing the photoresist which is not required after the etching is completed, the device assembly step, the inspection step, and the like. In this case, by performing the above-described exposure method using the exposure apparatus of the above-described embodiment in the lithography step, the element pattern is formed on the glass substrate, so that a high-complexity element can be manufactured with good productivity.
產業上之可利用性Industrial availability
如以上之說明，本發明之曝光裝置及方法適於對物體進行掃描曝光。又，本發明之平面顯示器之製造方法適於平面顯示器之生產。此外，本發明之元件製造方法適於微元件之生產。As explained above, the exposure apparatus and method of the present invention are suitable for scanning exposure of an object. Further, the method of manufacturing a flat panel display of the present invention is suitable for the production of a flat panel display. thisFurther, the component manufacturing method of the present invention is suitable for the production of microcomponents.
10‧‧‧液晶曝光裝置10‧‧‧Liquid exposure device
20‧‧‧照明系20‧‧‧Lighting
22‧‧‧照明系本體22‧‧‧Lighting body
30‧‧‧光罩載台裝置30‧‧‧Photomask stage device
40‧‧‧投影光學系40‧‧‧Projection Optics
42‧‧‧投影系本體42‧‧‧Projection Ontology
50‧‧‧基板載台裝置50‧‧‧Substrate stage device
52‧‧‧載台本體52‧‧‧Substrate body
62‧‧‧對準顯微鏡62‧‧‧Aligning microscope
IA‧‧‧曝光區域IA‧‧‧ exposed area
IAM‧‧‧照明區域IAM‧‧‧Lighting area
IL‧‧‧照明光IL‧‧‧Lights
M‧‧‧光罩M‧‧‧Photo Mask
Mk‧‧‧對準標記Mk‧‧ align mark
P‧‧‧基板P‧‧‧Substrate
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2015071008 | 2015-03-31 |
| Publication Number | Publication Date |
|---|---|
| TW201643557Atrue TW201643557A (en) | 2016-12-16 |
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW105110513ATW201643557A (en) | 2015-03-31 | 2016-03-31 | Exposure apparatus, manufacturing method of flat panel display, device manufacturing method, and exposure method |
| TW109120645ATWI743845B (en) | 2015-03-31 | 2016-03-31 | Exposure apparatus, manufacturing method of flat panel display, device manufacturing method, and exposure method |
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW109120645ATWI743845B (en) | 2015-03-31 | 2016-03-31 | Exposure apparatus, manufacturing method of flat panel display, device manufacturing method, and exposure method |
| Country | Link |
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| JP (1) | JP6744588B2 (en) |
| KR (1) | KR102560814B1 (en) |
| CN (2) | CN107430354B (en) |
| TW (2) | TW201643557A (en) |
| WO (1) | WO2016159201A1 (en) |
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| CN110232867B (en)* | 2019-05-13 | 2022-01-04 | Tcl华星光电技术有限公司 | Mother board exposure structure of display panel |
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| CN107430354B (en) | 2021-04-06 |
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