本發明涉及半導體蝕刻工藝的等離子處理裝置及其處理方法，特別是用於脈衝型等離子反應腔的終點檢測方法。The invention relates to a plasma processing apparatus for a semiconductor etching process and a processing method thereof, in particular to an end point detecting method for a pulse type plasma reaction chamber.
積體電路製造工藝是一種平面製作工藝，其結合光刻、蝕刻、沉積、離子注入等多種工藝，在同一基板表面形成大量各種類型的複雜器件，並將其互相連接已具有完整的電子功能。隨著積體電路的器件的特徵尺寸不斷地縮小，集成度不斷地提高，對各步工藝的監控及其工藝結果的精確度提出了更高的要求。The integrated circuit manufacturing process is a planar fabrication process that combines various processes such as photolithography, etching, deposition, and ion implantation to form a large number of complex devices of various types on the same substrate surface, and interconnects them to have complete electronic functions. As the feature size of the device of the integrated circuit is continuously reduced, the degree of integration is continuously improved, and higher requirements are imposed on the monitoring of each step process and the accuracy of the process result.
蝕刻工藝是積體電路製造工藝中最複雜的工序之一。精確監控蝕刻工藝的蝕刻終點顯得尤為重要。在專利號為US4861419的美國專利中提供一種通過光學發射光譜法(OES)判斷等離子體蝕刻工藝的蝕刻終點監控方法。採用OES判斷等離子體蝕刻工藝的蝕刻終點監控方法包括：確定所檢測的元素，所述元素為所要蝕刻的膜層的成分；採集所述元素的光強度，所述光強度與所述元素的濃度相關；隨著蝕刻工藝的進行，在蝕刻終點，膜層物質被蝕刻完畢，所述元素在蝕刻腔的濃度減小，反應室內檢測到的所述元素的光強度開始減小，此時，即為蝕刻終點。The etching process is one of the most complicated processes in the integrated circuit fabrication process. It is especially important to accurately monitor the etch end of the etch process. An etching end point monitoring method for determining a plasma etching process by optical emission spectroscopy (OES) is provided in U.S. Patent No. 4,864,419. An etch endpoint monitoring method using OES to determine a plasma etch process includes determining a detected element that is a component of a film layer to be etched; collecting a light intensity of the element, the light intensity and a concentration of the element Correlation; as the etching process proceeds, at the end of the etching, the film material is etched, the concentration of the element in the etching chamber is reduced, and the light intensity of the element detected in the reaction chamber begins to decrease, at this time, For the end of the etch.
隨著加工工藝的發展，部分蝕刻工藝需要採用脈衝型等離子來實現蝕刻目標，在蝕刻過程中施加到等離子反應腔的射頻電源不是持續穩定的功率，而是會隨著時間的變化發生功率變化，甚至突變。典型的脈衝型等離子可以使施加的射頻功率在開通和關閉之間切換，調節開通時間占整個處理週期的比例也就是占空比來實現對蝕刻形貌和速度的調節。在射頻電源開通時等離子反應腔內蝕刻狀態與傳統蝕刻過程相同，關閉時等離子在極短時間內熄滅(幾個微秒)，只有自由基仍然存在，可以繼續進行蝕刻，但是蝕刻的效果與開通時間不同。脈衝型等離子的特性會造成等離子發光頻譜和發光強度隨著脈衝頻率突變，傳統的蝕刻終點檢測裝置會把在等離子熄滅狀態時的光學信號誤認為是等離子蝕刻終點的信號，目標材料層蝕刻還未完成，就停止了蝕刻，嚴重干擾正常的等離子蝕刻終點判斷。With the development of processing technology, some etching processes require pulsed plasma to achieve the etching target. The RF power applied to the plasma reaction chamber during the etching process is not a constant power, but a power change occurs with time. Even mutations. A typical pulse-type plasma can switch the applied RF power between on and off. The ratio of the turn-on time to the entire processing cycle, that is, the duty cycle, is used to adjust the etch profile and speed. When the RF power is turned on, the etching state in the plasma reaction chamber is the same as that in the conventional etching process. When the plasma is off, the plasma is extinguished in a very short time (a few microseconds), and only the free radicals still exist, and can continue.Etching, but the effect of etching is different from the turn-on time. The characteristics of pulsed plasma will cause the plasma luminescence spectrum and luminescence intensity to change with the pulse frequency. The traditional etch end point detection device will mistake the optical signal in the plasma extinction state as the signal of the plasma etch end point, and the target material layer has not been etched yet. Upon completion, the etching is stopped, severely interfering with the normal plasma etch endpoint determination.
所以，在實際應用脈衝等離子蝕刻工藝時，現有的判斷等離子體蝕刻工藝的蝕刻終點的監控裝置和方法不能準確地監控等離子體蝕刻工藝的蝕刻終點，需要改進現有蝕刻終點檢測裝置和方法。Therefore, in the actual application of the pulse plasma etching process, the existing monitoring device and method for determining the etching end point of the plasma etching process cannot accurately monitor the etching end point of the plasma etching process, and it is necessary to improve the existing etching end point detecting device and method.
本發明解決的問題是提供一種能準確地監控脈衝型等離子體蝕刻工藝的等離子反應腔及其蝕刻終點檢測方法。The problem to be solved by the present invention is to provide a plasma reaction chamber and an etching end point detecting method capable of accurately monitoring a pulse type plasma etching process.
本發明的一種等離子處理裝置，包括：等離子反應腔；射頻電源，與所述等離子反應腔相連接，用以輸出射頻功率到所述等離子反應腔並產生等離子體；等離子狀態檢測裝置，與所述等離子反應腔相連接，用以檢測所述等離子反應腔內等離子體的光學信號，所述等離子狀態檢測裝置還包括一信號採集快門；脈衝信號發生器，與所述射頻電源和所述信號採集快門相連接，所述脈衝信號發生器產生脈衝信號，並同步輸出到所述射頻電源和所述信號採集快門，以同步控制所述等離子反應腔內等離子體的產生和等離子狀態檢測。所述等離子狀態檢測裝置為一光學信號檢測器，所述光學信號檢測器包括一信號輸出端連接到一電腦。A plasma processing apparatus of the present invention comprises: a plasma reaction chamber; a radio frequency power source connected to the plasma reaction chamber for outputting radio frequency power to the plasma reaction chamber and generating a plasma; a plasma state detecting device, a plasma reaction chamber is coupled to detect an optical signal of the plasma in the plasma reaction chamber, the plasma state detecting device further comprising a signal acquisition shutter; a pulse signal generator, and the RF power source and the signal acquisition shutter Connected, the pulse signal generator generates a pulse signal and synchronously outputs to the RF power source and the signal acquisition shutter to synchronously control plasma generation and plasma state detection in the plasma reaction chamber. The plasma state detecting device is an optical signal detector, and the optical signal detector includes a signal output connected to a computer.
本發明還提供一種等離子處理裝置，包括：等離子反應腔；射頻電源，與所述等離子反應腔相連接，用以輸出射頻功率到所述等離子反應腔並產生等離子體；等離子狀態檢測裝置，與所述等離子反應腔相連接，用以檢測所述等離子反應腔內等離子體的光學信號；脈衝信號發生器，與所述射頻電源和所述等離子狀態檢測裝置相連接，所述脈衝信號發生器產生脈衝信號，並同步輸出到所述射頻電源和所述等離子狀態檢測裝置，以同步控制所述等離子反應腔內等離子體的產生和等離子狀態檢測。The present invention also provides a plasma processing apparatus comprising: a plasma reaction chamber; a radio frequency power source connected to the plasma reaction chamber for outputting radio frequency power to the plasma reaction chamber and generating a plasma; a plasma state detecting device, and a The plasma reaction chamber is connected to detect an optical signal of the plasma in the plasma reaction chamber; a pulse signal generator is connected to the RF power source and the plasma state detecting device, and the pulse signal generator generates a pulse And outputting to the RF power source and the plasma state detecting device synchronously to synchronously control plasma generation and plasma state detection in the plasma reaction chamber.
本發明所述光學信號檢測器包括一個快門使光學信號檢測器在檢測信號和遮罩信號之間進行狀態轉換。等離子狀態檢測裝置為一蝕刻工藝過程終點檢測裝置。所述等離子處理裝置為一等離子體蝕刻裝置。The optical signal detector of the present invention includes a shutter for causing an optical signal detector to perform a state transition between the detection signal and the mask signal. Plasma state detecting device is an etching processEnd point detection device. The plasma processing apparatus is a plasma etching apparatus.
本發明還提供一種等離子處理裝置的處理方法，所述等離子處理裝置包括等離子反應腔以及與所述等離子反應腔相連接的射頻電源和等離子狀態檢測裝置，所述處理方法包括：提供一脈衝信號發生器，與所述射頻電源和所述等離子狀態檢測裝置相連接，所述脈衝信號發生器產生脈衝信號，並同步輸出到所述射頻電源和所述等離子狀態檢測裝置，以同步控制所述等離子反應腔內等離子體的產生和等離子狀態檢測。所述提供一脈衝信號發生器的步驟中，所述脈衝信號被供應到所述射頻電源的射頻信號發生器，使射頻信號發生器輸出脈衝型射頻信號，產生脈衝型等離子體，所述脈衝型射頻信號具有高功率輸出階段和低功率輸出階段。The present invention also provides a processing method of a plasma processing apparatus, the plasma processing apparatus comprising a plasma reaction chamber and a radio frequency power source and a plasma state detecting device connected to the plasma reaction chamber, the processing method comprising: providing a pulse signal generation Connected to the RF power source and the plasma state detecting device, the pulse signal generator generates a pulse signal and synchronously outputs to the RF power source and the plasma state detecting device to synchronously control the plasma reaction In-cavity plasma generation and plasma state detection. In the step of providing a pulse signal generator, the pulse signal is supplied to a radio frequency signal generator of the radio frequency power source, and the radio frequency signal generator outputs a pulse type radio frequency signal to generate a pulse type plasma, the pulse type The RF signal has a high power output stage and a low power output stage.
所述脈衝頻率大於500hz小於500Khz。脈衝型射頻信號包括高功率射頻輸出和等離子熄滅階段時，對等離子狀態檢測為在高功率射頻輸出階段檢測光學信號，遮罩等離子熄滅階段的光學信號。脈衝型射頻信號中低功率射頻輸出階段輸出功率大於零，等離子仍然處於點燃狀態時，所述對等離子狀態檢測為放大低功率射頻輸出階段的光學信號或調低高功率射頻輸出階段的光學信號，或者是遮罩高功率輸出階段或低功率輸出階段之一的信號。所述等離子處理裝置為一等離子體蝕刻裝置，所述等離子狀態檢測包括檢測蝕刻工藝過程的終點。The pulse frequency is greater than 500 hz and less than 500 Khz. When the pulsed RF signal includes a high power RF output and a plasma extinction phase, the plasma state detection detects the optical signal during the high power RF output phase, masking the optical signal during the plasma extinction phase. In the pulsed RF signal, the output power of the low-power RF output stage is greater than zero. When the plasma is still in the ignition state, the plasma state detection is to amplify the optical signal of the low-power RF output stage or to lower the optical signal of the high-power RF output stage. Or a signal that masks one of the high power output stage or the low power output stage. The plasma processing apparatus is a plasma etching apparatus, and the plasma state detection includes detecting an end point of an etching process.
與現有技術相比，本發明具有以下優點：本發明能夠在不同脈衝時間段內，根據不同脈衝階段的功率特性對檢測到的等離子光學信號作出即時的調整，最終獲得穩定、可靠的光學信號，即時反應等離子反應腔內的狀態。Compared with the prior art, the present invention has the following advantages: the present invention can instantly adjust the detected plasma optical signal according to the power characteristics of different pulse phases in different pulse periods, and finally obtain a stable and reliable optical signal. Instantly reacts to the state within the plasma reaction chamber.
1‧‧‧等離子處理裝置1‧‧‧plasma processing unit
10‧‧‧射頻電源10‧‧‧RF power supply
11‧‧‧導線11‧‧‧Wire
12‧‧‧同步導線12‧‧‧Synchronous wire
20‧‧‧脈衝信號發生器20‧‧‧ pulse signal generator
30‧‧‧等離子狀態檢測裝置30‧‧‧ Plasma state detector
32‧‧‧電腦32‧‧‧ computer
34‧‧‧處理軟體34‧‧‧Processing software
圖1是現有技術在檢測脈衝型等離子體時獲得的光學信號；圖2是本發明實施例的等離子處理裝置示意圖；圖3是本發明在檢測脈衝型等離子體時獲得的光學信號示意圖。1 is an optical signal obtained when a pulse type plasma is detected in the prior art; FIG. 2 is a schematic view of a plasma processing apparatus according to an embodiment of the present invention; and FIG. 3 is a schematic diagram of an optical signal obtained by the present invention in detecting a pulse type plasma.
由背景技術可知，通過傳統的終點檢測裝置不能在輸入射頻功率是脈衝狀態下精確的檢測到蝕刻終點。本發明提出將輸入射頻功率源的脈衝信號同步的提供給終點檢測裝置。It is known from the background art that the conventional end point detecting means cannot accurately detect the etching end point when the input RF power is pulsed. The present invention proposes to provide a pulse signal of an input RF power source to the end point detecting device in synchronization.
如圖2所示為本發明等離子處理裝置示意圖，圖中本發明的等離子處理裝置1包括一個等離子反應腔100，等離子反應腔100內通入反應氣體，射頻電源10向等離子反應腔內100的電極或線圈施加射頻電場，使反應氣體電離形成等離子體。一個脈衝信號發生器20產生脈衝信號用於控制射頻電源10，使射頻電源輸入到反應腔100的射頻信號輸出功率以脈衝頻率高低切換，比如ON/OFF切換，或者高功率/低功率切換。不同的功率輸入使得等離子反應腔內的等離子具有不同的狀態，相應的等離子體發光也會如圖1中所示的同步變化。一個光學信號檢測器30安裝在等離子反應腔側壁能夠觀測到等離子的位置處，並將光學信號轉換為電信號傳輸到電腦32。光學信號檢測器30可以是CCD感應器或者其他光學感測器，感應等離子反應腔內等離子體發出的頻譜的光線，並測量等離子反應腔內反應氣體和反應產物對應等離子的發光強度。電腦32對電信號進行濾波、比較、存儲、運算等動作後輸出信號給監控整個等離子處理的處理軟體34。本發明的脈衝信號發生器20產生的脈衝信號通過導線11輸入到射頻電源10，同時還包括一個同步導線12輸入到光學信號檢測器30。光學信號檢測器30在收到脈衝信號後，在脈衝信號處於OFF狀態或低功率狀態時，光學信號檢測器30內的快門被切換到遮罩狀態。所述光學信號檢測器內的快門可以是機械的快門，如相機內的多片可移動的擋片，也可以是電子式的，如現有專利US6914630所述的：通過一個電子快門電路控制CCD感應器處於接收光學信號狀態或者光學信號遮罩狀態。或者也可以是CCD控制電路內的一段程式，根據接收到脈衝信號，做出接收光學信號或者遮罩光學信號的處理。所以每個脈衝週期內只有射頻輸出功率處於高輸出狀態時，相應的光學信號才會被光學信號檢測器30檢測，並被做為蝕刻終點檢測的判斷依據。現有光學信號檢測器的掃描速度以及後續電腦進行計算的較慢，每秒僅能取樣幾次或者幾十次，相對於現在常見的脈衝信號發生器產生的脈衝信號頻率範圍是500HZ-500Khz，所以不能通過光學探測器本身的取樣直接判斷脈衝輸出是在高功率或是低功率狀態。2 is a schematic view of a plasma processing apparatus according to the present invention. The plasma processing apparatus 1 of the present invention includes a plasma reaction chamber 100, a reaction gas is introduced into the plasma reaction chamber 100, and an RF power source 10 is directed to an electrode of the plasma reaction chamber 100. Or the coil applies a radio frequency electric field to ionize the reaction gas to form a plasma. A pulse signal generator 20 generates a pulse signal for controlling the RF power source 10, so that the RF signal output power input to the reaction chamber 100 by the RF power source is switched at a high or low pulse frequency, such as ON/OFF switching, or high power/low power switching. Different power inputs cause the plasma within the plasma reaction chamber to have different states, and the corresponding plasma illumination will also change synchronously as shown in FIG. An optical signal detector 30 is mounted at a position where the plasma reaction chamber side wall can observe the plasma, and converts the optical signal into an electrical signal for transmission to the computer 32. The optical signal detector 30 may be a CCD sensor or other optical sensor that senses the spectrum of light emitted by the plasma in the plasma reaction chamber and measures the luminous intensity of the plasma corresponding to the reaction gas and the reaction product in the plasma reaction chamber. The computer 32 filters, compares, stores, and operates the electrical signals and outputs signals to the processing software 34 that monitors the entire plasma processing. The pulse signal generated by the pulse signal generator 20 of the present invention is input to the RF power source 10 through the wire 11, and also includes a synchronization wire 12 input to the optical signal detector 30. After receiving the pulse signal, the optical signal detector 30 switches the shutter in the optical signal detector 30 to the mask state when the pulse signal is in the OFF state or the low power state. The shutter in the optical signal detector may be a mechanical shutter, such as a plurality of movable flaps in the camera, or may be electronic, as described in the prior art US Pat. No. 6,914,630: controlling CCD sensing through an electronic shutter circuit The device is in a state of receiving an optical signal or an optical signal mask. Alternatively, it may be a program in the CCD control circuit that performs processing for receiving an optical signal or masking an optical signal based on the received pulse signal. Therefore, when only the RF output power is in the high output state in each pulse period, the corresponding optical signal is detected by the optical signal detector 30, and is used as the judgment basis for the etching end point detection. The scanning speed of the existing optical signal detector and the subsequent calculation of the computer are slow, and can only be sampled several times or several times per second. The pulse signal frequency range generated by the common pulse signal generator is 500HZ-500Khz, so Cannot pass the sampling of the optical detector itselfIt is judged whether the pulse output is in a high power or low power state.
如圖3所示為本發明在檢測脈衝型等離子體時獲得的光學信號示意圖，圖中只有射頻輸出功率處於高功率狀態時對應的光學信號。由於遮罩了會對檢測結果造成干擾的信號，所以本發明等離子處理裝置能夠實現對蝕刻終點的精確檢測。本發明的光學信號檢測器30通過脈衝信號來同步地選擇需要進行檢測的時間段，同時遮罩不具有參考價值的時間段，能夠獲得更能反應等離子處理狀態的信號。FIG. 3 is a schematic diagram of an optical signal obtained when detecting a pulse type plasma according to the present invention. In the figure, only the corresponding optical signal is obtained when the RF output power is in a high power state. The plasma processing apparatus of the present invention enables accurate detection of the etching end point by masking a signal that interferes with the detection result. The optical signal detector 30 of the present invention synchronously selects a period of time during which detection is required by a pulse signal while masking a period of time having no reference value, and can obtain a signal more responsive to the plasma processing state.
該脈衝信號可以通過一條傳輸同步信號的導線12來傳輸，也可以是通過無線的電磁場發射的方式，在光學信號檢測器30設置一個信號接收端接收脈衝信號器即可。其他能夠實現同步信號傳輸的裝置均屬於本發明範圍。The pulse signal may be transmitted through a wire 12 for transmitting a synchronization signal, or may be transmitted by a wireless electromagnetic field. The optical signal detector 30 may be provided with a signal receiving end to receive the pulse signal. Other devices capable of achieving synchronization signal transmission are within the scope of the invention.
脈衝同步信號傳輸到光學信號檢測器30內後也可以不是通過機械的快門，而是通過內部控制電路來使光學檢測器不接收光學信號。作為另一種方案，脈衝同步信號也可以直接傳輸到電腦32中，電腦32根據接收到的脈衝同步信號將來自光學信號檢測器30的信號進行處理，留下高輸出功率時間段內的信號，遮罩低輸出功率時間段內的信號。包括光學信號檢測器30、電腦32、處理軟體34在內的等離子狀態檢測裝置中任何一個部件都可以相應設置接收脈衝信號的埠，或者同時設置能夠遮罩低功率輸出時間段內光學信號的硬體或軟體。After the pulse synchronization signal is transmitted into the optical signal detector 30, the optical detector may not receive the optical signal by the internal control circuit instead of through the mechanical shutter. Alternatively, the pulse synchronizing signal can also be directly transmitted to the computer 32. The computer 32 processes the signal from the optical signal detector 30 based on the received pulse synchronizing signal, leaving a signal during the high output power period. The cover has a low output power period of time. Any one of the plasma state detecting devices including the optical signal detector 30, the computer 32, and the processing software 34 can be configured to receive the chirp of the pulse signal, or at the same time set a hard mask capable of masking the optical signal during the low power output period. Body or software.
本發明脈衝等離子體除了ON/OFF這類的等離子點燃與熄滅的交替外，也可以是射頻功率大小的交替，此時等離子體一直處於點燃狀態，只是發光亮度交替變化。在功率較低時，等離子狀態檢測裝置30檢測到的光學信號仍然對等離子蝕刻終點檢測具有意義，所以也可以作為參考信號。當脈衝信號中低功率時間比高功率時間還長時，檢測低功率時間段內的光學信號更容易獲得穩定的代表等離子狀態的信號。比如占空比小於30%如只有10%時，高功率時間段很短，現有光學系統無法採樣時間太短的信號，不能全面反應等離子反應狀態。此時用低功率時間段內的光學信號作為蝕刻終點檢測依據更能反應等離子反應狀態。相反的，如果占空比大於70%，如90%時，則可以對高功率時間段內的射頻信號進行採樣而遮罩低功率時間段的信號。所以本發明能夠在不同脈衝時間段內，根據不同脈衝階段的功率特性對檢測到的等離子光學信號作出即時的調整，最終獲得穩定、可靠的光學信號，即時反應等離子反應腔內的狀態。In addition to the alternating plasma ignition and extinction such as ON/OFF, the pulse plasma of the present invention may also be an alternating RF power level, in which case the plasma is always in an ignited state, except that the luminance of the illumination alternates. When the power is low, the optical signal detected by the plasma state detecting device 30 still has significance for the plasma etching end point detection, so it can also be used as a reference signal. When the low power time in the pulse signal is longer than the high power time, it is easier to obtain a stable signal representing the plasma state by detecting the optical signal in the low power period. For example, when the duty ratio is less than 30%, such as only 10%, the high power time period is very short, and the existing optical system cannot sample the signal with too short time, and cannot fully reflect the plasma reaction state. At this time, the optical signal in the low power period is used as the etch end detection basis to more react to the plasma reaction state. Conversely, if the duty cycle is greater than 70%, such as 90%, the RF signal in the high power period can be sampled.Mask signals for low power periods. Therefore, the present invention can instantly adjust the detected plasma optical signal according to the power characteristics of different pulse phases in different pulse periods, and finally obtain a stable and reliable optical signal, and instantly react to the state in the plasma reaction chamber.
本發明所述的對光學檢測信號的處理除了上述選擇高功率輸出階段和低功率輸出階段之一做為反映等離子狀態的信號，放棄其他階段的信號處理方法外，其他處理方法，比如調整檢測到的光學信號的強度，或者綜合比較多個脈衝信號來選擇所要取樣的時間段以適應多種不同的脈衝等離子狀態：第二個脈衝射頻信號添加到等離子反應腔100，最終的等離子發光亮度是兩個脈衝射頻功率輸出的綜合作用結果，此時等離子體會存在至少3個不同狀態；一個脈衝射頻電源10但是其輸出脈衝型功率的占空比是隨著時間逐漸變化的，不同時間具有不同的等離子狀態。這些具有複雜等離子狀態的脈衝等離子處理方法需要電腦或者控制軟體內設置相應的程式選擇最佳的、具有代表性的等離子體光學信號來採樣，或者可以對採樣到的光學信號轉化為電信號，在電路中對電信號強度作部分放大或縮小或者在電腦中對數位化的資訊作加工處理獲得修正後的信號強度，以使其更能反應等離子反應腔100內真實的狀態。The processing of the optical detection signal according to the present invention, in addition to the above-mentioned selection of the high power output stage and the low power output stage as a signal reflecting the plasma state, abandoning other stages of the signal processing method, other processing methods, such as adjustment detection The intensity of the optical signal, or a combination of multiple pulse signals to select the time period to be sampled to accommodate a variety of different pulse plasma states: a second pulse RF signal is added to the plasma reaction chamber 100, and the final plasma illumination brightness is two The combined effect of the pulsed RF power output, at which time there will be at least 3 different states of the plasma; a pulsed RF power supply 10, but the duty cycle of its output pulse-type power is gradually changed with time, and has different plasma states at different times. . These pulse plasma processing methods with complex plasma states require a computer or control software to set up a corresponding program to select the best representative plasma optical signal for sampling, or to convert the sampled optical signal into an electrical signal. The electrical signal strength is partially amplified or reduced in the circuit or the digitized information is processed in a computer to obtain a corrected signal strength to better reflect the true state of the plasma reaction chamber 100.
本發明等離子處理裝置除了可以用於等離子蝕刻反應腔，也可以用於其他反應腔，如等離子去光阻(strip)反應腔，在光阻被去除完成後，CO2、H2O等光阻與氧氣反應生成的產物就會迅速減少，相應的能夠在等離子體的光譜信號中觀測到；其他等離子處理工藝，只要包括：通入反應氣體初始時光學信號處於第一狀態，在反應完成時等離子體光學信號處於第二狀態的至少兩個狀態的工藝，均可以應用本發明方法來監控反應狀態。The plasma processing apparatus of the present invention can be used in other reaction chambers, such as a plasma strip reaction chamber, in addition to the plasma etching reaction chamber, and the photoresist such as CO2 and H2O reacts with oxygen after the photoresist is removed. The generated product is rapidly reduced, and can be observed in the spectral signal of the plasma; other plasma treatment processes include: the optical signal is in the first state when the reaction gas is initially introduced, and the plasma optical signal is completed when the reaction is completed. The process of the present invention can be applied to the process of monitoring the reaction state in at least two states of the second state.
本發明雖然已以較佳實施例公開如上，但其並不是用來限定本發明，任何本領域技術人員在不脫離本發明的精神和範圍內，都可以利用上述揭示的方法和技術內容對本發明技術方案做出可能的變動和修改，因此，凡是未脫離本發明技術方案的內容，依據本發明的技術實質對以上實施例所作的任何簡單修改、等同變化及修飾，均屬於本發明技術方案的保護範圍。The present invention has been disclosed in the preferred embodiments as described above, but it is not intended to limit the invention, and the present invention may be utilized by the method and technical contents disclosed above without departing from the spirit and scope of the invention. The technical solutions make possible changes and modifications. Therefore, any simple modifications, equivalent changes, and modifications made to the above embodiments in accordance with the technical spirit of the present invention are not included in the technical solutions of the present invention. protected range.
1‧‧‧等離子處理裝置1‧‧‧plasma processing unit
10‧‧‧射頻電源10‧‧‧RF power supply
11‧‧‧導線11‧‧‧Wire
12‧‧‧同步導線12‧‧‧Synchronous wire
20‧‧‧脈衝信號發生器20‧‧‧ pulse signal generator
30‧‧‧等離子狀態檢測裝置30‧‧‧ Plasma state detector
32‧‧‧電腦32‧‧‧ computer
34‧‧‧處理軟體34‧‧‧Processing software
| Application Number | Priority Date | Filing Date | Title |
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| CN201310017593.8ACN103943447B (en) | 2013-01-17 | 2013-01-17 | Plasma processing device and processing method thereof |
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| TW201438091Atrue TW201438091A (en) | 2014-10-01 |
| TWI563557B TWI563557B (en) | 2016-12-21 |
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| TW105120430ATWI623034B (en) | 2013-01-17 | 2014-01-16 | Plasma processing device and processing method thereof |
| TW103101549ATW201438091A (en) | 2013-01-17 | 2014-01-16 | Plasma processing apparatus and processing method thereof |
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| TW105120430ATWI623034B (en) | 2013-01-17 | 2014-01-16 | Plasma processing device and processing method thereof |
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