本發明是有關一種對位結構，且特別有關一種具有柵狀結構的對位結構。The present invention relates to a para-structure and, in particular, to a para-structure having a grid-like structure.
一般而言，在玻璃覆晶基板(Chip On Glass；COG)的製程中，晶片與玻璃基板各具有一對位記號，且二對位記號的形狀大致相同。當晶片與玻璃基板結合時，需先藉由電子校準設備將晶片上的對位記號與玻璃基板上的對位記號對齊，之後才加以組裝。也就是說，對位記號可確保晶片與玻璃基板的相對位置，使晶片能準確地設置於玻璃基板上。Generally, in the process of a chip on glass (COG), the wafer and the glass substrate each have a pair of bit marks, and the shapes of the two alignment marks are substantially the same. When the wafer is bonded to the glass substrate, the alignment mark on the wafer is first aligned with the alignment mark on the glass substrate by an electronic calibration device, and then assembled. That is to say, the alignment mark ensures the relative position of the wafer to the glass substrate, so that the wafer can be accurately placed on the glass substrate.
習知晶片上的對位記號是以金屬(例如鋁)形成一特定形狀於晶片基板的內金屬介電層(Inter-Metal Dielectric；IMD)上。其中，對位記號的形狀例如十字形或T字形。然而，在晶片的對位記號形成後，晶片的後續製程還包含鍍上抗反射層(例如氮化鈦；TiN)與保護層(例如氮化矽；SiN)，因此對位記號上也會同時被抗反射層覆蓋。當電子校準設備辨識晶片的對位記號時，對位記號上的抗反射層會造成對位記號的反差比不明顯，因此會降低電子校準設備判讀對位記號的準確性。The alignment mark on the conventional wafer is formed of a metal (for example, aluminum) in a specific shape on the inner metal dielectric layer (IMD) of the wafer substrate. Among them, the shape of the alignment mark is, for example, a cross or a T shape. However, after the alignment mark of the wafer is formed, the subsequent process of the wafer further includes plating an anti-reflection layer (for example, titanium nitride; TiN) and a protective layer (for example, tantalum nitride; SiN), so that the alignment marks are simultaneously Covered by an anti-reflection layer. When the electronic calibration device recognizes the alignment mark of the wafer, the anti-reflection layer on the alignment mark causes the contrast ratio of the alignment mark to be inconspicuous, thereby reducing the accuracy of the electronic calibration device for interrogating the alignment mark.
此外，位於晶片之對位記號上的抗反射層雖可藉由圖案化的光阻與蝕刻液移除，並使反差比變強，但增加一光罩來移除對位記號上的抗反射層不僅會增加製程的時間，還會增加材料的成本。In addition, the anti-reflective layer on the alignment mark of the wafer can be removed by the patterned photoresist and the etching solution, and the contrast ratio is increased, but a mask is added to remove the anti-reflection on the alignment mark. The layer will not only increase the time of the process,It also increases the cost of materials.
本發明之一技術態樣為一種對位結構位於一基板上。One aspect of the present invention is a registration structure on a substrate.
根據本發明一實施方式，一種對位結構包含內金屬介電層與柵狀結構。內金屬介電層位於基板上。柵狀結構包含柵狀金屬層與柵狀抗反射層。柵狀金屬層位於內金屬介電層上。柵狀抗反射層位於柵狀金屬層上，且柵狀抗反射層與柵狀金屬層圍繞的區域內形成有一對位部。According to an embodiment of the invention, an alignment structure includes an inner metal dielectric layer and a grid structure. The inner metal dielectric layer is on the substrate. The grid structure includes a gate metal layer and a grid anti-reflection layer. The grid metal layer is on the inner metal dielectric layer. The gate anti-reflection layer is located on the gate metal layer, and a pair of portions are formed in a region surrounded by the gate anti-reflection layer and the gate metal layer.
在本發明一實施方式中，其中上述柵狀金屬層包含複數個第一條狀結構位於內金屬介電層上，且第一條狀結構彼此平行，使第一條狀結構之間形成有複數個間隙。In an embodiment of the invention, the gate metal layer comprises a plurality of first strip structures on the inner metal dielectric layer, and the first strip structures are parallel to each other, so that a plurality of first strip structures are formed between the first strip structures. A gap.
在本發明一實施方式中，其中上述內金屬介電層露出於間隙與對位部。In an embodiment of the invention, the inner metal dielectric layer is exposed to the gap and the alignment portion.
在本發明一實施方式中，其中上述柵狀金屬層更包含複數個第二條狀結構位於內金屬介電層上。第二條狀結構彼此平行且分別交錯於第一條狀結構，使第二條狀結構與第一條狀結構之間形成有複數個孔洞。In an embodiment of the invention, the gate metal layer further comprises a plurality of second strip structures on the inner metal dielectric layer. The second strip-like structures are parallel to each other and are respectively staggered to the first strip-like structure such that a plurality of holes are formed between the second strip-shaped structure and the first strip-shaped structure.
在本發明一實施方式中，其中上述內金屬介電層露出於孔洞與對位部。In an embodiment of the invention, the inner metal dielectric layer is exposed to the hole and the alignment portion.
在本發明一實施方式中，其中上述對位結構更包含保護層位於內金屬介電層與柵狀結構上。In an embodiment of the invention, the alignment structure further includes a protective layer on the inner metal dielectric layer and the grid structure.
本發明之一技術態樣為一種對位結構位於一基板上。One aspect of the present invention is a registration structure on a substrate.
根據本發明一實施方式，一種對位結構包含內金屬介電層、複數個金屬層、複數個抗反射層與保護層。內金屬介電層位於基板上且具有對位部，其中對位部形成有複數個填充槽且填充槽呈柵狀排列。金屬層分別位於填充槽中。抗反射層分別位於金屬層上，使金屬層與抗反射層形成一柵狀結構。保護層位於內金屬介電層與柵狀結構上。According to an embodiment of the invention, a para-structure includes an inner metal dielectric layer, a plurality of metal layers, a plurality of anti-reflective layers, and a protective layer. Inner metalThe dielectric layer is located on the substrate and has an alignment portion, wherein the alignment portion is formed with a plurality of filling grooves and the filling grooves are arranged in a grid shape. The metal layers are respectively located in the filling grooves. The anti-reflection layer is respectively located on the metal layer, so that the metal layer and the anti-reflection layer form a grid structure. The protective layer is on the inner metal dielectric layer and the grid structure.
在本發明一實施方式中，其中上述每一抗反射層與每一金屬層的高度之和大於每一填充槽的高度，使每一抗反射層凸出於內金屬介電層。In an embodiment of the invention, the sum of the heights of each of the anti-reflective layers and each of the metal layers is greater than the height of each of the filling grooves, such that each of the anti-reflective layers protrudes from the inner metal dielectric layer.
本發明之一技術態樣為一種對位結構的製作方法。One aspect of the present invention is a method of fabricating a alignment structure.
根據本發明一實施方式，一種對位結構的製作方法包含下列步驟：According to an embodiment of the invention, a method for fabricating a registration structure includes the following steps:
(a)形成內金屬介電層於基板上。(a) forming an inner metal dielectric layer on the substrate.
(b)形成金屬層於內金屬介電層上。(b) forming a metal layer on the inner metal dielectric layer.
(c)形成抗反射層於金屬層上。(c) forming an antireflection layer on the metal layer.
(d)形成光阻層覆蓋於抗反射層上。(d) forming a photoresist layer overlying the anti-reflective layer.
(e)圖案化光阻層，使光阻層為柵狀且圍繞的區域內具有一鏤空部。(e) patterning the photoresist layer such that the photoresist layer is gate-shaped and has a hollow portion in the surrounding region.
(f)使用蝕刻液去除未被光阻層覆蓋的抗反射層與金屬層，使金屬層形成為一柵狀金屬層，且抗反射層形成為一柵狀抗反射層，其中柵狀金屬層與柵狀抗反射層圍繞的區域內形成一對位部對應柵狀光阻層之鏤空部的位置。(f) using an etchant to remove the anti-reflective layer and the metal layer not covered by the photoresist layer, so that the metal layer is formed as a grid-like metal layer, and the anti-reflection layer is formed as a grid-like anti-reflection layer, wherein the grid-like metal layer A position of a pair of portions corresponding to the hollow portion of the grating photoresist layer is formed in a region surrounded by the gate anti-reflection layer.
(g)形成保護層於內金屬介電層、柵狀金屬層與柵狀抗反射層上。(g) forming a protective layer on the inner metal dielectric layer, the gate metal layer, and the grid anti-reflective layer.
本發明之一技術態樣為一種對位結構的製作方法。One aspect of the present invention is a method of fabricating a alignment structure.
根據本發明一實施方式，一種對位結構的製作方法包含下列步驟：Method for fabricating a alignment structure according to an embodiment of the present inventionIncludes the following steps:
(a)形成內金屬介電層於基板上，其中內金屬介電層具有一對位部。(a) forming an inner metal dielectric layer on the substrate, wherein the inner metal dielectric layer has a pair of locations.
(b)形成光阻層覆蓋於對位部上。(b) forming a photoresist layer overlying the alignment portion.
(c)圖案化光阻層，使光阻層為柵狀。(c) patterning the photoresist layer such that the photoresist layer has a grid shape.
(d)使用蝕刻液去除未被光阻層覆蓋的對位部，使對位部形成有複數個填充槽，且填充槽呈柵狀排列。(d) The alignment portion not covered by the photoresist layer is removed by using an etching solution, and a plurality of filling grooves are formed in the alignment portion, and the filling grooves are arranged in a grid shape.
(e)形成複數個金屬層於填充槽中。(e) forming a plurality of metal layers in the filling bath.
(f)形成複數個抗反射層於金屬層上，使金屬層與抗反射層形成一柵狀結構。(f) forming a plurality of anti-reflection layers on the metal layer to form a grid-like structure between the metal layer and the anti-reflection layer.
(g)形成保護層於內金屬介電層與抗反射層上。(g) forming a protective layer on the inner metal dielectric layer and the anti-reflection layer.
在本發明上述實施方式中，此對位結構係利用內金屬介電層與柵狀結構的抗反射層與來產生反差比(或對比)，不需增加額外的光罩經過曝光、顯影與蝕刻製程來移除對位結構上的抗反射層。也就是說，對位結構因具有反差比(或對比)，因此可節省一道光罩的製程時間與材料成本。In the above embodiment of the present invention, the alignment structure utilizes an inner metal dielectric layer and an anti-reflection layer of the grating structure to produce a contrast ratio (or contrast) without adding an additional mask to expose, develop, and etch. The process removes the anti-reflective layer on the alignment structure. That is to say, the alignment structure has a contrast ratio (or contrast), thereby saving the processing time and material cost of a mask.
以下將以圖式揭露本發明之複數個實施方式，為明確說明起見，許多實務上的細節將在以下敘述中一併說明。然而，應瞭解到，這些實務上的細節不應用以限制本發明。也就是說，在本發明部分實施方式中，這些實務上的細節是非必要的。此外，為簡化圖式起見，一些習知慣用的結構與元件在圖式中將以簡單示意的方式繪示之。The embodiments of the present invention are disclosed in the following drawings, and the details of However, it should be understood that these practical details are not intended to limit the invention. That is, in some embodiments of the invention, these practical details are not necessary. In addition, some of the conventional structures and elements are shown in the drawings in a simplified schematic manner in order to simplify the drawings.
第1圖繪示根據本發明一實施方式之對位結構210使用時的示意圖。如圖所示，對位結構210位於一基板200上，且對位記號110位於另一基板100上。其中，對位結構210與對位記號110的形狀大致相同。基板200的材質可以包含矽，例如晶片基材(wafer)。基板100的材質可以包含玻璃，例如顯示面板的玻璃基板。當基板200結合於基板100上時，可先藉由電子校準設備將基板200上的對位結構210與基板100上的對位記號110對齊，之後才將基板200組裝固定於基板100上，以確保基板200與基板100的相對位置。FIG. 1 is a schematic diagram showing the use of the alignment structure 210 according to an embodiment of the present invention. As shown, the alignment structure 210 is on a substrate 200, and the alignment mark 110 is on the other substrate 100. The shape of the alignment structure 210 and the alignment mark 110 are substantially the same. The material of the substrate 200 may include germanium, such as a wafer wafer. The material of the substrate 100 may include glass, such as a glass substrate of a display panel. When the substrate 200 is bonded to the substrate 100, the alignment structure 210 on the substrate 200 can be aligned with the alignment mark 110 on the substrate 100 by an electronic calibration device, and then the substrate 200 is assembled and fixed on the substrate 100. The relative position of the substrate 200 to the substrate 100 is ensured.
在本實施方式中，對位結構210應用於玻璃覆晶基板(Chip On Glass；COG)的製程，且對位結構210係設置於晶片基材上。然而在其他實施方式中，對位結構210也可應用於其他製程或設置於其他種類的基板上，並不以限制本發明。在以下敘述中，將詳細說明對位結構210包含的元件與元件間的連接關係。In the present embodiment, the alignment structure 210 is applied to a process of a chip on glass (COG), and the alignment structure 210 is disposed on a wafer substrate. However, in other embodiments, the alignment structure 210 can also be applied to other processes or to other types of substrates, and is not intended to limit the present invention. In the following description, the connection relationship between the elements included in the alignment structure 210 and the elements will be described in detail.
第2圖繪示第1圖之對位結構210沿線段2-2’的剖面圖。第3圖繪示第1圖之對位結構210沿線段3-3’的剖面圖。同時參閱第2圖與第3圖，上述實施例之對位結構210包含內金屬介電層220(Inter-Metal Dielectric；IMD)與柵狀結構230。其中，內金屬介電層220位於基板200上。柵狀結構230包含柵狀金屬層232與柵狀抗反射層234。柵狀金屬層232位於內金屬介電層220上。柵狀抗反射層234位於柵狀金屬層232上，且柵狀抗反射層234與柵狀金屬層232圍繞的區域內形成有一對位部236。Figure 2 is a cross-sectional view of the alignment structure 210 of Figure 1 taken along line 2-2'. Figure 3 is a cross-sectional view of the alignment structure 210 of Figure 1 taken along line 3-3'. Referring to FIGS. 2 and 3 simultaneously, the alignment structure 210 of the above embodiment includes an inter-metal dielectric 220 (IMD) and a grid structure 230. The inner metal dielectric layer 220 is located on the substrate 200. The grid structure 230 includes a grid metal layer 232 and a grid anti-reflection layer 234. The gate metal layer 232 is on the inner metal dielectric layer 220. The gate anti-reflection layer 234 is located on the gate metal layer 232, and a pair of bit portions 236 are formed in a region surrounded by the gate anti-reflection layer 234 and the gate metal layer 232.
此外，柵狀金屬層232包含複數個第一條狀結構231與複數個第二條狀結構233。對位結構210還可包含保護層240位於內金屬介電層220與柵狀結構230上。在本實施方式中，第一條狀結構231與第二條狀結構233皆位於同一水平面。應瞭解在第3圖中，由於第2圖的第二條狀結構233會被第3圖的保護層240所遮蔽，且第1圖線段3-3’並不會剖到第二條狀結構233，因此僅第3圖繪示柵狀金屬層232的第一條狀結構231。In addition, the gate metal layer 232 includes a plurality of first strip structures 231 and a plurality of second strip structures 233. The alignment structure 210 may further include a protective layer 240 on the inner metal dielectric layer 220 and the grid structure 230. In the present embodiment, the first strip structure 231 and the second strip structure 233 are all located in the same horizontal plane. It should be understood that in FIG. 3, since the second strip structure 233 of FIG. 2 is shielded by the protective layer 240 of FIG. 3, the first line segment 3-3' does not cut into the second strip structure. 233, therefore only FIG. 3 shows the first strip structure 231 of the grid metal layer 232.
第一條狀結構231與第二條狀結構233位於內金屬介電層220上，且第一條狀結構231彼此平行，第二條狀結構233彼此平行。第二條狀結構233分別交錯於第一條狀結構231，使第二條狀結構233與第一條狀結構231之間形成有複數個孔洞235。如此一來，內金屬介電層220會露出於孔洞235與對位部236。再者，保護層240可防止內金屬介電層220、柵狀金屬層232與柵狀抗反射層234接觸水氣與氧氣而氧化。The first strip structure 231 and the second strip structure 233 are located on the inner metal dielectric layer 220, and the first strip structures 231 are parallel to each other, and the second strip structures 233 are parallel to each other. The second strip structures 233 are respectively staggered to the first strip structures 231 such that a plurality of holes 235 are formed between the second strip structures 233 and the first strip structures 231. As a result, the inner metal dielectric layer 220 is exposed to the hole 235 and the alignment portion 236. Furthermore, the protective layer 240 prevents the inner metal dielectric layer 220, the gate metal layer 232 and the grid-like anti-reflective layer 234 from being oxidized by contact with moisture and oxygen.
在本實施方式中，內金屬介電層220的材質可以包含SiO2，且可利用化學氣相沉積法(Chemical Vapor Deposition；CVD)形成於基板200上。柵狀金屬層232的材質可以包含鋁或銅，柵狀抗反射層234的材質可以包含氮化鈦(TiN)。柵狀金屬層232與柵狀抗反射層234可以先採用物理氣相沉積(Physical Vapor Deposition；PVD)法依序形成於內金屬介電層220上，之後再經過曝光、顯影與蝕刻等製程形成對位部236與孔洞235。此外，保護層240的材質可以包含氮化矽(SiN)，因此不易被氧氣與水氣所滲透。保護層240可藉由化學氣相沉積法形成於內金屬介電層220與柵狀結構230上。然而，內金屬介電層220、柵狀金屬層232、柵狀抗反射層234與保護層240的材質與形成方式並不以上述為限。In the present embodiment, the material of the inner metal dielectric layer 220 may include SiO2 and may be formed on the substrate 200 by chemical vapor deposition (CVD). The material of the grid metal layer 232 may include aluminum or copper, and the material of the grid anti-reflection layer 234 may include titanium nitride (TiN). The gate metal layer 232 and the gate anti-reflective layer 234 may be sequentially formed on the inner metal dielectric layer 220 by a physical vapor deposition (PVD) method, and then formed by exposure, development, and etching processes. The alignment portion 236 and the hole 235. In addition, the material of the protective layer 240 may include tantalum nitride (SiN), so it is not easily penetrated by oxygen and moisture. The protective layer 240 may be formed on the inner metal dielectric layer 220 and the grid structure 230 by chemical vapor deposition. However, the material and formation manner of the inner metal dielectric layer 220, the grid metal layer 232, the grid anti-reflective layer 234, and the protective layer 240 are not limited to the above.
具體而言，對位結構210可藉由露出於對位部236的內金屬介電層220與柵狀結構230的柵狀抗反射層234來產生反差比(或對比)，不需增加額外的光罩經過曝光、顯影與蝕刻製程來移除習知對位結構上的抗反射層。也就是說，此對位結構210因具有反差比(或對比)，因此可節省一道光罩的製程時間與材料成本。Specifically, the alignment structure 210 can generate a contrast ratio (or contrast) by exposing the inner metal dielectric layer 220 of the alignment portion 236 and the grid anti-reflection layer 234 of the grating structure 230, without adding an additional The mask is exposed, developed, and etched to remove the anti-reflective layer on conventional alignment structures. That is to say, the alignment structure 210 has a contrast ratio (or contrast), thereby saving the processing time and material cost of a mask.
在本實施方式中，對位部236的形狀為十字形用以與對位記號110(見第1圖)對齊。然而在其他實施方式中，對位部236的形狀也可以包含T字形、圓形、橢圓形、矩形或N邊形，其中N為大於或等於3的自然數。設計者可將柵狀結構230圍繞的區域設計成對應對位記號110(見第1圖)的形狀，使對位部236的形狀與對位記號110(見第1圖)的形狀相同便可。In the present embodiment, the shape of the alignment portion 236 is a cross shape for alignment with the alignment mark 110 (see FIG. 1). In other embodiments, however, the shape of the alignment portion 236 may also include a T-shape, a circle, an ellipse, a rectangle, or an N-shape, where N is a natural number greater than or equal to 3. The designer can design the area surrounded by the grid structure 230 to correspond to the shape of the alignment mark 110 (see FIG. 1), so that the shape of the alignment portion 236 can be the same as the shape of the alignment mark 110 (see FIG. 1). .
應瞭解到，已經在上述實施方式中敘述過的元件連接關係與材質將不再重複贅述。在以下敘述中，僅說明不同排列方式的柵狀結構230與不同形狀的對位部236，合先敘明。It should be understood that the component connection relationships and materials that have been described in the above embodiments will not be described again. In the following description, only the grid-like structures 230 of different arrangements and the aligning portions 236 of different shapes will be described together.
第4圖繪示根據本發明一實施方式之第1圖的對位結構210沿線段2-2’的剖面圖。第5圖繪示根據本發明一實施方式之第1圖的對位結構210沿線段3-3’的剖面圖。同時參閱第4圖與第5圖，對位結構210包含內金屬介電層220與柵狀結構230。與上述實施方式不同的地方在於柵狀金屬層232僅包含第一條狀結構231(見第2圖)而不包含第二條狀結構233(見第2圖)。第一條狀結構231位於內金屬介電層220上，且第一條狀結構231彼此平行，使第一條狀結構231之間形成有複數個間隙237。Fig. 4 is a cross-sectional view showing the alignment structure 210 along the line segment 2-2' according to Fig. 1 of the first embodiment of the present invention. Fig. 5 is a cross-sectional view showing the alignment structure 210 along the line segment 3-3' according to Fig. 1 of the first embodiment of the present invention. Referring also to FIGS. 4 and 5, the alignment structure 210 includes an inner metal dielectric layer.220 and grid structure 230. The difference from the above embodiment is that the grid metal layer 232 includes only the first strip structure 231 (see Fig. 2) and does not include the second strip structure 233 (see Fig. 2). The first strip structure 231 is located on the inner metal dielectric layer 220, and the first strip structures 231 are parallel to each other such that a plurality of gaps 237 are formed between the first strip structures 231.
如此一來，內金屬介電層220可露出於間隙237與對位部236。對位結構210仍可藉由露出於對位部236的內金屬介電層220與柵狀結構230的柵狀抗反射層234來產生反差比(或對比)。As such, the inner metal dielectric layer 220 can be exposed to the gap 237 and the alignment portion 236. The alignment structure 210 can still produce a contrast ratio (or contrast) by the inner metal dielectric layer 220 exposed to the alignment portion 236 and the grid anti-reflection layer 234 of the grid structure 230.
第6圖繪示根據本發明一實施方式之對位結構210的剖面圖。如圖所示，對位結構210包含內金屬介電層220與柵狀結構230。與上述實施方式不同的地方在於對位部236的形狀為圓形，內金屬介電層220仍可露出於間隙237與對位部236，使內金屬介電層220與柵狀結構230的柵狀抗反射層(未繪示於圖)產生反差比(或對比)。Figure 6 is a cross-sectional view of the alignment structure 210 in accordance with an embodiment of the present invention. As shown, the alignment structure 210 includes an inner metal dielectric layer 220 and a grid structure 230. The difference from the above embodiment is that the shape of the alignment portion 236 is circular, and the inner metal dielectric layer 220 can still be exposed to the gap 237 and the alignment portion 236, so that the inner metal dielectric layer 220 and the gate structure 230 are gated. An anti-reflective layer (not shown) produces a contrast ratio (or contrast).
第7圖繪示根據本發明一實施方式之第1圖的對位結構210沿線段2-2’的剖面圖。第8圖繪示根據本發明一實施方式之第1圖的對位結構210沿線段3-3’的剖面圖。在以下敘述中，對位結構210將改用對位結構310來作說明，合先敘明。同時參閱第7圖與第8圖，對位結構310位於基板300上。對位結構310包含內金屬介電層320、複數個金屬層332與複數個抗反射層334。其中，內金屬介電層320位於基板300上且具有對位部322。對位部322形成有複數個呈柵狀排列的填充槽324。金屬層332分別位於填充槽324中。抗反射層334分別位於金屬層332上，使金屬層332與抗反射層334形成一柵狀結構330。Fig. 7 is a cross-sectional view showing the alignment structure 210 along line 2-2' according to Fig. 1 of the first embodiment of the present invention. Figure 8 is a cross-sectional view of the alignment structure 210 along line segment 3-3' in accordance with a first embodiment of the present invention. In the following description, the alignment structure 210 will be described with reference to the alignment structure 310, which will be described first. Referring also to FIGS. 7 and 8, the alignment structure 310 is located on the substrate 300. The alignment structure 310 includes an inner metal dielectric layer 320, a plurality of metal layers 332, and a plurality of anti-reflection layers 334. The inner metal dielectric layer 320 is located on the substrate 300 and has an alignment portion 322 . The alignment portion 322 is formed with a plurality of filling grooves 324 arranged in a grid shape. Metal layers 332 are respectively located in the filling grooves 324. The anti-reflection layer 334 is respectively located on the metal layer 332.The metal layer 332 and the anti-reflective layer 334 are formed into a grid structure 330.
此外，對位結構310還可包含保護層340位於內金屬介電層320與柵狀結構330上。對位部322的形狀為十字形用以與對位記號110(見第1圖)對齊。然而，對位部322的形狀也可以包含T字形、圓形、橢圓形、矩形或N邊形，依照設計者實際需求而定。其中，N為大於或等於3的自然數。In addition, the alignment structure 310 may further include a protective layer 340 on the inner metal dielectric layer 320 and the grid structure 330. The shape of the alignment portion 322 is a cross shape for alignment with the alignment mark 110 (see Fig. 1). However, the shape of the alignment portion 322 may also include a T-shape, a circle, an ellipse, a rectangle, or an N-sided shape, depending on the actual needs of the designer. Where N is a natural number greater than or equal to 3.
在本實施方式中，內金屬介電層320的材質可以包含SiO2，且可利用化學氣相沉積法(Chemical Vapor Deposition；CVD)形成於基板300上，之後再藉由曝光、顯影與蝕刻製程於內金屬介電層320的對位部322中形成填充槽324。金屬層332的材質可以包含鎢，抗反射層334的材質可以包含氮化鈦(TiN)。金屬層332與抗反射層334可以先採用物理氣相沉積(Physical Vapor Deposition；PVD)法形成於內金屬介電層320上，之後再經過曝光、顯影與蝕刻等製程保留填充槽324上的金屬層332與抗反射層334。同樣地，保護層340的材質可以包含氮化矽(SiN)，因此不易被氧氣與水氣所滲透。保護層340可藉由化學氣相沉積法形成於內金屬介電層320與柵狀結構330上。然而，內金屬介電層320、金屬層332、抗反射層334與保護層340的材質與形成方式並不以上述為限。In this embodiment, the material of the inner metal dielectric layer 320 may include SiO2 and may be formed on the substrate 300 by chemical vapor deposition (CVD), followed by exposure, development, and etching processes. A filling groove 324 is formed in the alignment portion 322 of the inner metal dielectric layer 320. The material of the metal layer 332 may include tungsten, and the material of the anti-reflection layer 334 may include titanium nitride (TiN). The metal layer 332 and the anti-reflective layer 334 may be first formed on the inner metal dielectric layer 320 by a physical vapor deposition (PVD) method, and then the metal on the filling trench 324 is retained by processes such as exposure, development, and etching. Layer 332 and anti-reflective layer 334. Similarly, the material of the protective layer 340 may contain tantalum nitride (SiN), so it is not easily penetrated by oxygen and moisture. The protective layer 340 can be formed on the inner metal dielectric layer 320 and the grid structure 330 by chemical vapor deposition. However, the materials and formation manner of the inner metal dielectric layer 320, the metal layer 332, the anti-reflection layer 334, and the protective layer 340 are not limited to the above.
具體而言，對位結構310可藉由對位部322四週的內金屬介電層320與位於對位部322中的抗反射層334來產生反差比(或對比)，不需增加額外的光罩經過曝光、顯影與蝕刻製程來移除習知對位結構上的抗反射層。在本實施方式中，每一抗反射層334與每一金屬層332的高度之和H2大於每一填充槽324的高度H1，使每一抗反射層334可凸出於內金屬介電層320，以增加抗反射層334與內金屬介電層320之間的反差比(或對比)。由於對位結構310具有反差比(或對比)，因此仍可節省一道光罩的製程時間與材料成本。Specifically, the alignment structure 310 can generate a contrast ratio (or contrast) by the inner metal dielectric layer 320 around the alignment portion 322 and the anti-reflection layer 334 located in the alignment portion 322, without adding additional light. The mask is exposed, developed, and etched to remove the anti-reflective layer on conventional alignment structures. In this implementationThe height H2 of each anti-reflective layer 334 and each metal layer 332 is greater than the height H1 of each filling trench 324, so that each anti-reflective layer 334 can protrude from the inner metal dielectric layer 320 to increase The contrast ratio (or contrast) between the anti-reflective layer 334 and the inner metal dielectric layer 320. Since the alignment structure 310 has a contrast ratio (or contrast), the process time and material cost of a mask can still be saved.
第9圖繪示根據本發明一實施方式之對位結構310的剖面圖。對位結構310包含內金屬介電層320與柵狀結構330。與上述實施方式不同的地方在於對位部322的形狀為矩形，內金屬介電層320與柵狀結構330的抗反射層(未繪示於圖)仍可產生反差比(或對比)。FIG. 9 is a cross-sectional view of a alignment structure 310 in accordance with an embodiment of the present invention. The alignment structure 310 includes an inner metal dielectric layer 320 and a grid structure 330. The difference from the above embodiment is that the shape of the alignment portion 322 is rectangular, and the inner metal dielectric layer 320 and the anti-reflection layer of the grid structure 330 (not shown) can still produce a contrast ratio (or contrast).
第10圖繪示根據本發明一實施方式之對位結構的製作方法流程圖。首先在步驟S1中，形成內金屬介電層於基板上。接著在步驟S2中，形成金屬層於內金屬介電層上。之後在步驟S3中，形成抗反射層於金屬層上。接著在步驟S4中，形成光阻層覆蓋於抗反射層上。之後在步驟S5中，圖案化光阻層，使光阻層為柵狀且圍繞的區域內具有一鏤空部。接著在步驟S6中，使用蝕刻液去除未被光阻層覆蓋的抗反射層與金屬層，使金屬層形成為一柵狀金屬層，且抗反射層形成為一柵狀抗反射層，其中柵狀金屬層與柵狀抗反射層圍繞的區域內形成一對位部對應柵狀光阻層之鏤空部的位置。最後在步驟S7中，形成保護層於內金屬介電層、柵狀金屬層與柵狀抗反射層上。FIG. 10 is a flow chart showing a method for fabricating a registration structure according to an embodiment of the present invention. First, in step S1, an inner metal dielectric layer is formed on the substrate. Next, in step S2, a metal layer is formed on the inner metal dielectric layer. Thereafter, in step S3, an antireflection layer is formed on the metal layer. Next, in step S4, a photoresist layer is formed to cover the anti-reflection layer. Thereafter, in step S5, the photoresist layer is patterned such that the photoresist layer is gate-shaped and has a hollow portion in the surrounding region. Next, in step S6, the anti-reflection layer and the metal layer not covered by the photoresist layer are removed by using an etching solution, so that the metal layer is formed as a grid-like metal layer, and the anti-reflection layer is formed as a grating anti-reflection layer, wherein the gate is formed A portion of the portion corresponding to the hollow portion of the grating photoresist layer is formed in a region surrounded by the metal layer and the gate anti-reflective layer. Finally, in step S7, a protective layer is formed on the inner metal dielectric layer, the gate metal layer and the grid anti-reflection layer.
第11圖繪示根據本發明一實施方式之對位結構的製作方法流程圖。首先在步驟S1中，形成內金屬介電層於基板上，其中內金屬介電層具有一對位部。接著在步驟S2中，形成光阻層覆蓋於對位部上。之後在步驟S3中，圖案化光阻層，使光阻層為柵狀。接著在步驟S4中，使用蝕刻液去除未被光阻層覆蓋的對位部，使對位部形成有複數個填充槽，且填充槽呈柵狀排列。之後在步驟S5中，形成複數個金屬層於填充槽中。接著在步驟S6中，形成複數個抗反射層於金屬層上，使金屬層與反射層形成一柵狀結構。最後在步驟S7中，形成保護層於內金屬介電層與抗反射層上。11 is a flow chart showing a method of fabricating a registration structure according to an embodiment of the present invention. First, in step S1, an inner metal dielectric layer is formed on the base.The board has an inner metal dielectric layer having a pair of seats. Next, in step S2, a photoresist layer is formed to cover the alignment portion. Thereafter, in step S3, the photoresist layer is patterned such that the photoresist layer has a grid shape. Next, in step S4, the alignment portion not covered by the photoresist layer is removed using an etching solution, and a plurality of filling grooves are formed in the alignment portion, and the filling grooves are arranged in a grid shape. Thereafter, in step S5, a plurality of metal layers are formed in the filling tank. Next, in step S6, a plurality of anti-reflective layers are formed on the metal layer to form a grid-like structure between the metal layer and the reflective layer. Finally, in step S7, a protective layer is formed on the inner metal dielectric layer and the anti-reflection layer.
本發明上述實施方式與先前技術相較，此對位結構係利用內金屬介電層與柵狀結構的抗反射層與來產生反差比，不需增加額外的光罩經過曝光、顯影與蝕刻製程來移除對位結構上的抗反射層。也就是說，對位結構因具有反差比，因此可節省一道光罩的製程時間與材料成本。Compared with the prior art, the above-mentioned embodiment of the present invention utilizes an inner metal dielectric layer and an anti-reflective layer of a grid-like structure to produce a contrast ratio without adding an additional mask to the exposure, development and etching processes. To remove the anti-reflection layer on the alignment structure. That is to say, the alignment structure has a contrast ratio, thereby saving the processing time and material cost of a mask.
雖然本發明已以實施方式揭露如上，然其並非用以限定本發明，任何熟習此技藝者，在不脫離本發明之精神和範圍內，當可作各種之更動與潤飾，因此本發明之保護範圍當視後附之申請專利範圍所界定者為準。Although the present invention has been disclosed in the above embodiments, it is not intended to limit the present invention, and the present invention can be modified and modified without departing from the spirit and scope of the present invention. The scope is subject to the definition of the scope of the patent application attached.
100‧‧‧基板100‧‧‧Substrate
110‧‧‧對位記號110‧‧‧ alignment mark
200‧‧‧基板200‧‧‧Substrate
210‧‧‧對位結構210‧‧‧ alignment structure
220‧‧‧內金屬介電層220‧‧‧Metal dielectric layer
230‧‧‧柵狀結構230‧‧‧ grid structure
231‧‧‧第一條狀結構231‧‧‧First strip structure
232‧‧‧柵狀金屬層232‧‧‧Gated metal layer
233‧‧‧第二條狀結構233‧‧‧Second strip structure
234‧‧‧柵狀抗反射層234‧‧‧Gate anti-reflective layer
235‧‧‧孔洞235‧‧‧ holes
236‧‧‧對位部236‧‧‧Parts
237‧‧‧間隙237‧‧‧ gap
240‧‧‧保護層240‧‧‧protection layer
300‧‧‧基板300‧‧‧Substrate
310‧‧‧對位結構310‧‧‧ alignment structure
320‧‧‧內金屬介電層320‧‧‧Metal dielectric layer
322‧‧‧對位部322‧‧‧Parts
324‧‧‧填充槽324‧‧‧fill slot
330‧‧‧柵狀結構330‧‧‧ grid structure
332‧‧‧金屬層332‧‧‧metal layer
334‧‧‧抗反射層334‧‧‧Anti-reflective layer
340‧‧‧保護層340‧‧‧Protective layer
2-2’‧‧‧線段2-2’‧‧‧ segments
3-3’‧‧‧線段3-3’‧‧‧ Segment
H1‧‧‧高度H1‧‧‧ Height
H2‧‧‧高度之和H2‧‧‧ height sum
S1‧‧‧步驟S1‧‧‧ steps
S2‧‧‧步驟S2‧‧‧ steps
S3‧‧‧步驟S3‧‧‧ steps
S4‧‧‧步驟S4‧‧‧ steps
S5‧‧‧步驟S5‧‧ steps
S6‧‧‧步驟S6‧‧ steps
S7‧‧‧步驟S7‧‧ steps
第1圖繪示根據本發明一實施方式之對位結構使用時的示意圖。FIG. 1 is a schematic diagram showing the use of a alignment structure according to an embodiment of the present invention.
第2圖繪示第1圖之對位結構沿線段2-2’的剖面圖。Figure 2 is a cross-sectional view of the alignment structure of Figure 1 taken along line 2-2'.
第3圖繪示第1圖之對位結構沿線段3-3’的剖面圖。Figure 3 is a cross-sectional view of the alignment structure of Figure 1 taken along line 3-3'.
第4圖繪示根據本發明一實施方式之第1圖的對位結構沿線段2-2’的剖面圖。4 is a cross-sectional view of the first figure according to an embodiment of the present invention.A cross-sectional view taken along line 2-2'.
第5圖繪示根據本發明一實施方式之第1圖的對位結構沿線段3-3’的剖面圖。Fig. 5 is a cross-sectional view showing the alignment structure along line 3-3' of Fig. 1 according to an embodiment of the present invention.
第6圖繪示根據本發明一實施方式之對位結構的剖面圖。Figure 6 is a cross-sectional view showing a alignment structure according to an embodiment of the present invention.
第7圖繪示根據本發明一實施方式之第1圖的對位結構沿線段2-2’的剖面圖。Fig. 7 is a cross-sectional view showing the alignment structure along line 2-2' of Fig. 1 according to an embodiment of the present invention.
第8圖繪示根據本發明一實施方式之第1圖的對位結構沿線段3-3’的剖面圖。Fig. 8 is a cross-sectional view showing the alignment structure along line segment 3-3' according to Fig. 1 of an embodiment of the present invention.
第9圖繪示根據本發明一實施方式之對位結構的剖面圖。Figure 9 is a cross-sectional view showing a alignment structure according to an embodiment of the present invention.
第10圖繪示根據本發明一實施方式之對位結構的製作方法流程圖。FIG. 10 is a flow chart showing a method for fabricating a registration structure according to an embodiment of the present invention.
第11圖繪示根據本發明一實施方式之對位結構的製作方法流程圖。11 is a flow chart showing a method of fabricating a registration structure according to an embodiment of the present invention.
210‧‧‧對位結構210‧‧‧ alignment structure
220‧‧‧內金屬介電層220‧‧‧Metal dielectric layer
230‧‧‧柵狀結構230‧‧‧ grid structure
231‧‧‧第一條狀結構231‧‧‧First strip structure
232‧‧‧柵狀金屬層232‧‧‧Gated metal layer
233‧‧‧第二條狀結構233‧‧‧Second strip structure
235‧‧‧孔洞235‧‧‧ holes
236‧‧‧對位部236‧‧‧Parts
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW101118968ATWI466260B (en) | 2012-05-28 | 2012-05-28 | Alignment mark structure |
| CN201210270313XACN102800657A (en) | 2012-05-28 | 2012-07-31 | Alignment structure |
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW101118968ATWI466260B (en) | 2012-05-28 | 2012-05-28 | Alignment mark structure |
| Publication Number | Publication Date |
|---|---|
| TW201349433Atrue TW201349433A (en) | 2013-12-01 |
| TWI466260B TWI466260B (en) | 2014-12-21 |
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW101118968ATWI466260B (en) | 2012-05-28 | 2012-05-28 | Alignment mark structure |
| Country | Link |
|---|---|
| CN (1) | CN102800657A (en) |
| TW (1) | TWI466260B (en) |
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| US11127780B2 (en) | 2019-01-28 | 2021-09-21 | Au Optronics Corporation | Display panel |
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| US11127780B2 (en) | 2019-01-28 | 2021-09-21 | Au Optronics Corporation | Display panel |
| TWI742339B (en)* | 2019-01-28 | 2021-10-11 | 友達光電股份有限公司 | Display panel |
| Publication number | Publication date |
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| CN102800657A (en) | 2012-11-28 |
| TWI466260B (en) | 2014-12-21 |
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| Date | Code | Title | Description |
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| MM4A | Annulment or lapse of patent due to non-payment of fees |