201241903 六、發明說明： 【發明所屬之技術領域】 本發明是有關於一種劈裂製程，特別是指一種晶粒劈 裂製程。 【先前技術】 參閱圖1、圖2，現有的晶粒劈裂製程依序包括一晶圓 貼置步驟U1…切割道形成步驟112、-晶圓承載步驟 U3、一對位劈裂步驟114,及—重複步驟115，而可將一晶 圓12分割成複數分離待進行後段封裝的晶粒123。 首先是該晶圓貼置步驟1U，將該晶圓12可分離地黏 在載體13上，在半導體領域或光電領域中，該載體 為藍膠（blue tape )。 β接著進行該切㈣形成步驟112，以例如雷射切割，或 是機械輪切等方法，自該晶圓12表面形成複數未切穿晶圓 12亚將晶圓12界定出複數晶粒半成品ΐ2ι的切割道122。 ,、繼續’進行該晶圓承载步驟113,將貼置於裁體13並 形成有切割道122的晶圓12可分離地設置於一承載平台η 上0 '讀崎㈣位劈裂步棘114，利用電職體程式搭配 :如電荷輕合元件（〜一W De蝴像辨視系 、洗，以自動搜尋晶圓12上的切割道122的位置，並將一劈 广欲作用的切割道122 ;待劈刀14與晶圓12的 ⑽=對位後，即令該劈刀14作動而接觸對應於該切 ^道⑵的晶圓結構，進而使該晶圓^沿該切 S. 201241903 劈裂。 最後進行該重複步驟115’重複進行該對位劈裂步驟 114的過程，使該劈刀14依序作用於該晶圓12上形成的所 有切割道122，而使晶圓12由切割道122所界定的晶粒半 成品121被分離而成複數晶粒123，完成晶粒劈裂製程。 現行的晶粒劈裂製程雖然可以配合影像辨視系統對準 切割道m進行晶圓u的劈裂而得到多數晶粒123，卻仍 具有以下缺點： ⑴在對位劈裂步驟114中’若遺漏校正歸零程序， 或座標不準確，將使該劈刀14無法對準該等切割道122， 而直接往該等晶粒半成⑨121擊#，造成晶圓12的毁損； (2)劈刀14的長度與數量有極限，通常在對位劈裂 步驟U4中-次僅先能劈裂縱向與橫向的其中—個方向， 然後再劈裂縱向與橫向的其中另—個方向；而若晶圓12上 同方向的切割it 122數量較多時，在同—方向還需分多次 重覆進行對位劈裂步驟114， 4即该重覆步驟，造成耗費過多 時間而拖延製程效率。 【發明内容】 因此’本發明之目# ’即在提供—種可以縮短時間與 提向良率的晶粒劈裂製程。 '、疋本發明晶粒劈裂製程包含-晶圓貼置步驟、一 切割道形成步驟、一晶圓系截止 載步驟’及一氣壓施加步驟。 該晶圓貼置步驟將一 a圓 f日日®可分離地設置於一載體上。 201241903 該切割道形成步驟於該晶圓上形成複數條彼此相配合 地界定出複數晶粒半成品的切割道。 該晶圓承載步驟將該設置有晶圓的載體以具有預定張 力的狀態可分離地設置於一承載平台。 該氣壓施加步驟以一喷氣裝置向該承載平台方向施加 預定氣體壓力的氣體於該晶圓，而使該晶圓沿該等切割道 被破裂成多數彼此分離的晶粒。 本發明之功效：利用施加預定氣體壓力的氣體於形成 有切割道的晶圓’而能一次性地令晶圓沿各切割道崩裂成 為多數分離的晶粒’大幅減少製程時間’同時提升晶粒 裂製程的良率。 【實施方式】 、有關本發明之前述及其他技術内容、特點與功效，在 以下配合參考圖式之—個較佳實施例的詳細說明中，將可 清楚的呈現。 在本發明被詳細描述前 师4心刖要主意的是，在以下的說 明内容中’類似的元件是以相同的編號來表示。 參閱圖3,本發明晶粒劈裂製程的較佳實施例包含一 圓貼置步驟21、一切到道报士、丰酿。^ ° $成步驟22、一晶圓承載步 23，及一氣壓施加步驟24。 配合參閱圖4,首先，進行該晶圓貼置步驟21，先 備-供物體可脫離地設置㈣體51，再將U 3設置 該載體上。在該較佳實施例中，該載體η是藍膠， 不以藍膠為限’且該載體51的種類不為本發明的重點，, 5 201241903 而讶琢晶圓 是利用藍心 再贅述。該晶圓3 w膠的黏著力量附著於該載體51上， 载體51上不易滑動。 ,_3和圖5’再來，進行該切割道形成步驟22， 矣用雷射的方式’及/或微影配合钱刻的方式，於該晶圓3 :面形成複數條往下凹陷且不切穿該晶圓3的切割道Μ， 該等切割冑31彼此相合地界定複數藉由該等切割道31 而間隔的晶粒半成品32,再將該載體51調置而可脫離地設 置於該形成有切割道31的表面。 參閱圖3、圖6，及圖7,接著，進行該晶圓承載步驟 23，將設置該晶圓3的載體51可分離地設置於一承载平台 52上，該承載平台52包括一主體521，及一連接於該主體 521頂面的緩衝材522。該缓衝材522具有複數分別對應該 等晶粒半成品32的位置而間隔設置的凸點523，而供該晶 圓3的晶粒半成品32設置於該缓衝材522的凸點523上。 s亥緩衝材522是選自具有可形變回復力的韌性物質所構 成°該載體51以具有預定張力的狀態可分離地設置於該承 載平台52’並透過預定張力使該載體51平均受力而不易扭 曲或變形’而可固定載體51的晶圓3相對該承載平台52 的位置。 參閱圖3和圖8,最後，進行該氣壓施加步驟24，先 準備一包括一氣囊532和一氣嘴單元531的噴氣裝置53, 該氣嘴單元531可釋出氣體，該氣囊532可容置氣體且為 稍具硬度的袋狀物而可藉由所容置.氣體的量或氣體進入時 201241903 的衝力與壓力而改變型態；該氣嘴單元53丨與該氣囊532 連結而可供氣體透過該氣嘴單元531進入該氣囊532,及自 該氣囊532中釋出。 先將該氣囊532往下固定於該承載平台52，並使該氣 囊532接觸該晶圓3遠離該承載平台52的表面，再利用該 氣嘴單兀531以向該承載平台52的方向在短時間内施加預 定氣體壓力的氣體，使氣體充填於該氣囊532中。由於氣 囊532内外氣體壓力差的差異，使該晶圓3的表面受到該 氣囊532提供的氣體壓力，加上氣體分子的不可壓縮性原 理，而在該晶圓3接觸該氣囊532的氣體壓力均勻分佈； 同時，配合該緩衝材522的設置，使得該晶圓3的切割道 31在文到氣體壓力差所提供的應力後均勻且大面積地沿該 等切割道31崩裂成多數晶粒33 (參閱圖9)。 特別地，若氣體自該氣嘴單元531短時間進入該氣囊 532中，則該晶圓3是短時間内瞬間受到氣體壓力差所提供 的應力，而形成氣體瞬間衝擊的力量，進而可配合利用類 似氣體爆炸使物體碎裂的原理，該晶圓3沿該等切割道 31(即自該晶圓3的脆弱處）斷裂，而將該等晶粒半成品 崩裂成如圖9的多數晶粒33。 舄忒明的是，由於該承載平 叼硬偉r材522的凸 523支撐該等晶粒半成品32，而使該等切割道μ為懸空 因此，氣體產生經由該氣囊532的作用對該晶圓3產生 間壓力時，除利用形成具有深度的切割道Η作為晶圓3 脆弱處，也再利用該等凸點523對該晶圓3的兩：相鄰 201241903 粒半成品32間形成剪斷的應力模式，進而提高該等晶粒半 成品32沿該等㈣道31完整地分離成多數晶粒33;除此 :外’由於該緩衝# 522選自具有可形變回復力的韌性物 質構成，故在氣體施加壓力的同時，也可吸收大部份施加 於該等晶粒半成品32上的衝擊力量，進而在崩裂後成為保 持完整型態而不破碎的晶粒33。 再需說明的是，若該氣嘴單元531釋出氣體的管徑大 於該晶圓3(圖未示出），可供氣體更均均且全面地透過該 氣囊532的作用施加氣體壓力於該晶圓3。 再需特別說明的是，由於不需再配合如目前晶粒劈裂 製程的對位劈裂步驟，且切割道31的深度與寬度也不需再 牵就劈刀的尺寸’所以較佳地，該等切割道31的深度為3 35um寬度為4〜20um，更為節省雷射切割形成該等切 割道3 1的成本與時間。 3亥較佳貫施例利用氣體自該氣嘴單元53丨經由該氣囊 532對該晶圓3產生瞬間衝擊的氣體壓力，由於是透過該氣 囊532的作用施加氣體壓力，故氣體壓力可平均地施加於 接觸為氣囊532的晶圓3 ;此外，也不需如目前的晶粒劈裂 製程，需先將劈刀利用對位系統對準切割道3丨，而是瞬間 自晶圓3脆弱處劈裂’所以不會產生對位不準而導致劈裂 失敗的缺點；另外，可針對晶圓3的尺寸製作相對應尺寸 的氣囊532 ’即可用同樣的方式將該晶圓3 一次劈裂成多數 晶粒33 ’而可適用於2时〜12忖晶圓，甚至是不規則的晶 圓或更大尺寸的晶圓，且不需經過如目前晶粒劈裂製程中 201241903 的重複步驟，降低許多製程時間，並提高製程良率。 综上所述，本發明在短時間内釋出氣體，而對該晶圓3 ，生瞬間衝擊力，用類似氣體爆炸的原理將該晶圓3自該 等切割道31 #理性地一次崩裂成多數分離且完整的晶粒 33 ’故確實能達成本發明之目的。 惟以上所述者，僅為本發明之較佳實施例而已，當不 能以此限定本發明實施之範圍，即大凡依本發明申請^利 範圍及發明說明内容所作之簡單的等效變化與修飾，皆仍 屬本發明專利涵蓋之範圍内。 【圖式簡單說明】 圖1是一流程圖，說明目前的晶粒劈裂製程； 圖2疋一剖視不意圖，說明一對位劈裂步驟； 圖3是一流程圖，說明本發明晶粒劈裂製程的一較佳 實施例； 圖4 一剖視示意圖’說明一晶圓設置於一載體； 圖5是一剖視示意圖，說明於該晶圓設置複數切割 道； ° 圖6是一剖視示意圖’說明將該晶圓設置於該承載平 台； 圖7是一剖視示意圖’說明一具有多數凸點的缓衝材 與該晶圓的對應位置； 圖8是一剖視示意圖，說明一氣壓施加步驟；及 圖9是一俯視圖，說明製得多數晶粒。 9 201241903 【主要元件符號說明】 111 ·.·. …·晶圓貼置步驟 112… •…切割道形成步驟 113… 日日圓承載步驟 114… •…對位劈裂步驟 115… •…重複步驟 12…… 日日圓 121… 日日粒半成σ口 122… •…切割道 123… 曰曰粒 13…… •…載體 14···.· …·劈刀 15··.. •…承載平台 21…… •…晶圓貼置步驟 22…… •…切割道形成步驟 23 .........晶圓承載步驟 24 .........氣壓施加步驟 3 ..........晶圓 31 .........切割道 32 .........晶粒半成品 3 3.........晶粒 51 .........載體 52 .........承載平台 521 .......主體 522 .......缓衝材 523 .......凸點 53 .........喷氣裝置 531 .......喷嘴單元 532 .......氣囊201241903 VI. Description of the Invention: [Technical Field of the Invention] The present invention relates to a cleaving process, and more particularly to a grain splitting process. [Prior Art] Referring to FIG. 1 and FIG. 2, the conventional chip splitting process includes a wafer attaching step U1, a dicing step forming step 112, a wafer carrying step U3, and a pair of bit splitting step 114. And - repeating step 115, a wafer 12 can be divided into a plurality of separate crystal grains 123 to be packaged in the back end. First, in the wafer attaching step 1U, the wafer 12 is detachably adhered to the carrier 13, and in the semiconductor field or the photovoltaic field, the carrier is a blue tape. The β then performs the cutting (four) forming step 112 to form a plurality of uncut wafers 12 from the surface of the wafer 12 by, for example, laser cutting or mechanical wheel cutting. The wafer 12 defines a plurality of grain semi-finished products. Cutting path 122. And continuing to perform the wafer carrying step 113, the wafer 12 attached to the cutting body 13 and having the dicing street 122 formed thereon is detachably disposed on a carrying platform η 0 'Nakasaki (four) position splitting step spine 114 Using an electric job program: such as a charge-and-light component (~ a W De butterfly system, washing, to automatically search for the position of the scribe line 122 on the wafer 12, and a versatile scribe line After the (10)=alignment of the boring tool 14 and the wafer 12, the boring tool 14 is actuated to contact the wafer structure corresponding to the dicing circuit (2), so that the wafer is cut along the S. 201241903 劈Finally, the repeating step 115' is repeated to repeat the process of the para-cleaving step 114, so that the file 14 is sequentially applied to all the dicing streets 122 formed on the wafer 12, and the wafer 12 is cut by the dicing street. The grain semi-finished product 121 defined by 122 is separated into a plurality of crystal grains 123 to complete the grain splitting process. The current grain splitting process can be combined with the image discrimination system to align the cutting track m to perform the splitting of the wafer u. The majority of the grains 123 are obtained, but still have the following disadvantages: (1) In the para-cleaving step 114, Correcting the zero return procedure, or the coordinates are inaccurate, will make the boring tool 14 unable to align with the dicing streets 122, and directly hit the dies 14 to become 9121 hits #, causing the wafer 12 to be damaged; (2) boring tool The length and number of 14 have a limit, usually in the para-cleaving step U4 - only the first one can split the longitudinal and lateral directions, and then split the longitudinal and lateral directions of the other direction; When the number of cuttings 122 in the same direction on the circle 12 is large, the same direction needs to be repeated in multiple times to perform the alignment splitting step 114, which is the repeated step, which causes excessive time and delays the process efficiency. SUMMARY OF THE INVENTION Therefore, the object of the present invention is to provide a grain splitting process which can shorten the time and improve the yield. ', the present invention includes a wafer splitting process including a wafer mounting step, a scribe line forming step, a wafer line cut-off step ′ and an air pressure applying step. The wafer attaching step detachably mounts a circle f day® on a carrier. 201241903 The scribe line forming step is Forming a plurality of stripes on the wafer to define each other a dicing die of a plurality of grain semi-finished products. The wafer carrying step is detachably disposed on a carrier platform in a state of having a predetermined tension. The air pressure applying step is applied to the carrier platform by a jet device. A gas of predetermined gas pressure is applied to the wafer, and the wafer is broken along the scribe lines into a plurality of crystal grains separated from each other. The effect of the present invention: using a gas applying a predetermined gas pressure to form a wafer having a scribe line 'It is possible to break the wafer along each scribe line into a plurality of separate dies at one time' to greatly reduce the process time' while improving the yield of the grain rupture process. [Embodiment] The foregoing and other technical contents related to the present invention The features and functions of the present invention will be apparent from the following detailed description of the preferred embodiments. In the present invention, it is to be understood that the same elements are denoted by the same reference numerals in the following description. Referring to Figure 3, a preferred embodiment of the grain splitting process of the present invention comprises a rounding step 21, all the way to the priest, and the rich. ^ ° $ into step 22, a wafer carrying step 23, and a gas pressure applying step 24. Referring to Fig. 4, first, the wafer attaching step 21 is performed, and a body 51 is provided for the object to be detachably disposed, and U 3 is placed on the carrier. In the preferred embodiment, the carrier η is blue plastic, not limited to blue rubber, and the type of the carrier 51 is not the focus of the present invention. 5 201241903 The wafer is surprisingly described using the blue core. The adhesive force of the wafer 3 w is adhered to the carrier 51, and the carrier 51 is less likely to slide. , _3 and FIG. 5', the scribe line forming step 22 is performed, and the method of laser scanning and/or lithography combined with the method of engraving is performed, and a plurality of strips are formed on the wafer 3: Cutting the laps of the wafer 3, the cutting dies 31 defining a plurality of die semi-finished products 32 spaced apart by the dicing streets 31, and then arranging the carrier 51 to be detachably disposed thereon The surface of the dicing street 31 is formed. Referring to FIG. 3, FIG. 6, and FIG. 7, the wafer carrying step 23 is performed, and the carrier 51 on which the wafer 3 is disposed is detachably disposed on a carrying platform 52. The carrying platform 52 includes a main body 521. And a cushioning material 522 connected to the top surface of the main body 521. The cushioning material 522 has a plurality of bumps 523 spaced apart from each other corresponding to the position of the grain blanks 32, and the grain blanks 32 for the wafers 3 are disposed on the bumps 523 of the buffer material 522. The shackle 522 is selected from a tough material having a deformable restoring force. The carrier 51 is detachably disposed on the carrying platform 52' in a state of having a predetermined tension and the carrier 51 is subjected to an average force by a predetermined tension. It is not easy to twist or deform 'to fix the position of the wafer 3 of the carrier 51 relative to the carrying platform 52. Referring to Figures 3 and 8, finally, the air pressure applying step 24 is performed to first prepare a jet device 53 including an air bag 532 and a air nozzle unit 531, which can release gas, and the air bag 532 can accommodate the gas. And the bag having a slightly hardness can be changed by the amount of gas or the momentum and pressure of the 201241903 when the gas enters; the gas nozzle unit 53 is coupled to the air bag 532 for gas permeation. The air nozzle unit 531 enters the air bag 532 and is released from the air bag 532. The air bag 532 is first fixed to the carrying platform 52, and the air bag 532 is contacted with the surface of the wafer 3 away from the carrying platform 52, and the air nozzle unit 531 is used to be short in the direction of the carrying platform 52. A gas of a predetermined gas pressure is applied for a period of time to fill the gas in the balloon 532. Due to the difference in gas pressure difference between the inside and outside of the air bag 532, the surface of the wafer 3 is subjected to the gas pressure supplied from the air bag 532, and the incompressibility principle of the gas molecules is added, and the gas pressure of the wafer 3 contacting the air bag 532 is uniform. At the same time, in conjunction with the arrangement of the buffer material 522, the dicing street 31 of the wafer 3 is uniformly and extensively cracked along the dicing streets 31 into a plurality of crystal grains 33 after the stress provided by the gas pressure difference. See Figure 9). In particular, if the gas enters the air bag 532 from the air nozzle unit 531 for a short time, the wafer 3 is subjected to the stress provided by the gas pressure difference in a short time, and the force of the instantaneous impact of the gas is formed, and the gas can be used together. Similar to the principle of gas explosion causing the object to be broken, the wafer 3 is broken along the dicing streets 31 (i.e., from the weak portion of the wafer 3), and the grain semi-finished products are broken into a plurality of crystal grains 33 as shown in FIG. . It is to be noted that since the convex 523 carrying the flat hard rib 522 supports the semi-finished products 32, the culverts μ are suspended, so that the gas is generated by the airbag 532. 3 When the inter-pressure is generated, in addition to forming the dicing enthalpy having the depth as the fragile portion of the wafer 3, the bumps 523 are used to form the shear stress between the two adjacent wafers 3: the adjacent 201241903 semi-finished products 32. The pattern, in turn, enhances the complete separation of the semi-finished products 32 along the (four) lanes 31 into a plurality of grains 33; except: externally; since the buffer # 522 is selected from a tough material having a deformable restoring force, At the same time as the pressure is applied, most of the impact force applied to the semi-finished products 32 can be absorbed, and after the cracking, the crystal grains 33 remain intact without being broken. It should be noted that if the diameter of the gas released by the air nozzle unit 531 is larger than the diameter of the wafer 3 (not shown), the gas can be applied to the gas 532 by applying the gas pressure more uniformly and comprehensively. Wafer 3. It should be particularly noted that since there is no need to cooperate with the eccentric splitting step as in the current grain splitting process, and the depth and width of the dicing street 31 do not need to be retracted to the size of the trowel, it is preferred that The depth of the dicing streets 31 is 3 35 um and the width is 4 to 20 um, which saves the cost and time for laser cutting to form the dicing streets 31. 3H preferably applies a gas pressure that instantaneously impacts the wafer 3 from the gas nozzle unit 53 via the air bag 532. Since the gas pressure is applied through the action of the air bag 532, the gas pressure can be evenly averaged. Applied to the wafer 3 in contact with the balloon 532; in addition, as in the current grain splitting process, the boring tool is first aligned with the dicing channel by the alignment system, but instantaneously from the weak portion of the wafer 3. The splitting 'so does not cause the disadvantage of misalignment and causing the splitting failure; in addition, the corresponding size of the airbag 532 ' can be made for the size of the wafer 3, and the wafer 3 can be split into one in the same manner. Most of the die 33' can be applied to 2 to 12 wafers, even irregular wafers or larger wafers, without the need to repeat steps such as 201241903 in the current grain splitting process. Many process times and improve process yield. In summary, the present invention releases gas in a short time, and the wafer 3 is subjected to a momentary impact force, and the wafer 3 is rationally cracked from the cutting lanes 31 by a gas explosion-like principle. Most of the separate and intact grains 33' do indeed achieve the objectives of the present invention. The above is only the preferred embodiment of the present invention, and the scope of the present invention is not limited thereto, that is, the simple equivalent changes and modifications made in accordance with the scope of the invention and the description of the invention. All remain within the scope of the invention patent. BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a flow chart illustrating a current grain splitting process; FIG. 2 is a cross-sectional view showing a pair of splitting steps; FIG. 3 is a flow chart illustrating the crystal of the present invention. A preferred embodiment of the cleavage process; FIG. 4 is a cross-sectional view showing a wafer disposed on a carrier; FIG. 5 is a cross-sectional view showing a plurality of dicing streets disposed on the wafer; FIG. 7 is a cross-sectional view illustrating a corresponding position of a buffer material having a plurality of bumps and the wafer; FIG. 8 is a cross-sectional view illustrating An air pressure applying step; and FIG. 9 is a top view showing that a plurality of crystal grains are produced. 9 201241903 [Description of main component symbols] 111 ·..... wafer mounting step 112... •...cutting path forming step 113... sunday carrying step 114... •...aligning splitting step 115... •... repeating step 12 ...... 日日圆121... Day granules into σ mouth 122... •...cutting road 123... 曰曰 13 13... •...carrier 14······· 劈 15···. ......•...Wafer Placement Step 22... •...Cleavage Path Formation Step 23.........wafer Carrying Step 24.........Air Pressure Application Step 3 .... ... wafer 31 ... ... cutting track 32 ... ... grain semi-finished products 3 3 ... ... ... ...carrier 52 .... carrying platform 521 . . . main body 522 . . . cushioning material 523 ....... bump 53 .........jet device 531 .......nozzle unit 532 ....... airbag
S 10 .S 10 .