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TW200505310A - Silver alloy material, circuit substrate, electronic device, and method for manufacturing circuit substrate - Google Patents

Silver alloy material, circuit substrate, electronic device, and method for manufacturing circuit substrate

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Publication number
TW200505310A
TW200505310ATW093121925ATW93121925ATW200505310ATW 200505310 ATW200505310 ATW 200505310ATW 093121925 ATW093121925 ATW 093121925ATW 93121925 ATW93121925 ATW 93121925ATW 200505310 ATW200505310 ATW 200505310A
Authority
TW
Taiwan
Prior art keywords
circuit substrate
alloy material
silver alloy
silver
indium
Prior art date
Application number
TW093121925A
Other languages
Chinese (zh)
Other versions
TWI319776B (en
Inventor
Yuhichi Saitoh
Akiyoshi Fujii
Original Assignee
Sharp Kk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP2004185264Aexternal-prioritypatent/JP4498835B2/en
Priority claimed from JP2004185228Aexternal-prioritypatent/JP4421394B2/en
Application filed by Sharp KkfiledCriticalSharp Kk
Publication of TW200505310ApublicationCriticalpatent/TW200505310A/en
Application grantedgrantedCritical
Publication of TWI319776BpublicationCriticalpatent/TWI319776B/en

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Abstract

A circuit substrate of the present invention uses as component materials for gate lines and gate electrodes, silver alloy material containing silver as a main component, and at least one element selected from the group consisting of tin, zinc, lead, bismuth, indium, and gallium. It is especially preferable that the silver alloy material mainly consisting of silver and containing indium is used for the gate lines and the gate electrodes. With this, it is possible to provide silver alloy material whose resistance value, adhesion, plasma resistance, and reflection characteristics can be appropriately adjusted by the adjustment of the content of indium. Further, it is also possible to apply the alloy in accordance with the characteristic required for each part of the circuit substrate.
TW093121925A2003-07-232004-07-22Silver alloy material, circuit substrate, electronic device, and method for manufacturing circuit substrateTWI319776B (en)

Applications Claiming Priority (4)

Application NumberPriority DateFiling DateTitle
JP20032008152003-07-23
JP20032008062003-07-23
JP2004185264AJP4498835B2 (en)2003-07-232004-06-23 Circuit board, manufacturing method thereof, and electronic device
JP2004185228AJP4421394B2 (en)2003-07-232004-06-23 Silver alloy material, circuit board, electronic device, and method of manufacturing circuit board

Publications (2)

Publication NumberPublication Date
TW200505310Atrue TW200505310A (en)2005-02-01
TWI319776B TWI319776B (en)2010-01-21

Family

ID=34084641

Family Applications (1)

Application NumberTitlePriority DateFiling Date
TW093121925ATWI319776B (en)2003-07-232004-07-22Silver alloy material, circuit substrate, electronic device, and method for manufacturing circuit substrate

Country Status (4)

CountryLink
US (1)US20050019203A1 (en)
KR (2)KR100677805B1 (en)
CN (1)CN100339914C (en)
TW (1)TWI319776B (en)

Families Citing this family (25)

* Cited by examiner, † Cited by third party
Publication numberPriority datePublication dateAssigneeTitle
JP4102280B2 (en)2002-10-142008-06-18三星電子株式会社 Magnetic medium using spin-polarized electrons, information recording apparatus and recording method for magnetic medium
KR20070019458A (en)*2005-08-122007-02-15삼성전자주식회사 Wiring, its formation method, thin film transistor substrate and its manufacturing method
US7872022B2 (en)*2006-04-032011-01-18Hoffmann-La Roche Inc.Serotonin transporter (SERT) inhibitors for the treatment of depression and anxiety
JP5257965B2 (en)*2006-04-252013-08-07独立行政法人物質・材料研究機構 Method for producing alloy fine particle colloid
EP2185304B1 (en)*2007-09-072013-07-17E. I. du Pont de Nemours and CompanyMethod for the production of a multi-element alloy powder containing silver and at least two non-silver containing elements
JP4636128B2 (en)*2008-06-242011-02-23ソニー株式会社 Input device and display device with input function
JP2010225572A (en)*2008-11-102010-10-07Kobe Steel Ltd Reflective anode electrode and wiring film for organic EL display
EP2325848B1 (en)2009-11-112017-07-19Samsung Electronics Co., Ltd.Conductive paste and solar cell
KR101741683B1 (en)2010-08-052017-05-31삼성전자주식회사Conductive paste and electronic device and solar cell including an electrode formed using the conductive paste
US8668847B2 (en)2010-08-132014-03-11Samsung Electronics Co., Ltd.Conductive paste and electronic device and solar cell including an electrode formed using the conductive paste
US8987586B2 (en)2010-08-132015-03-24Samsung Electronics Co., Ltd.Conductive paste and electronic device and solar cell including an electrode formed using the conductive paste
US8974703B2 (en)2010-10-272015-03-10Samsung Electronics Co., Ltd.Conductive paste and electronic device and solar cell including an electrode formed using the same
US8652860B2 (en)2011-01-092014-02-18Bridgelux, Inc.Packaging photon building blocks having only top side connections in a molded interconnect structure
US9461023B2 (en)*2011-10-282016-10-04Bridgelux, Inc.Jetting a highly reflective layer onto an LED assembly
US9105370B2 (en)2011-01-122015-08-11Samsung Electronics Co., Ltd.Conductive paste, and electronic device and solar cell including an electrode formed using the same
US8940195B2 (en)2011-01-132015-01-27Samsung Electronics Co., Ltd.Conductive paste, and electronic device and solar cell including an electrode formed using the same
SE536911C2 (en)*2011-02-092014-10-28Impact Coatings Ab Material for providing an electrically conductive contact layer, a contact element with such layer, method for providing the contact element, and use of the material
EP2800146A1 (en)*2013-05-032014-11-05Saint-Gobain Glass FranceBack contact substrate for a photovoltaic cell or module
EP2800145B1 (en)*2013-05-032018-11-21Saint-Gobain Glass FranceBack contact substrate for a photovoltaic cell or module
CN104419844A (en)*2013-08-232015-03-18光洋应用材料科技股份有限公司Silver alloy material
JP5924609B2 (en)*2013-12-032016-05-25国立大学法人山形大学 Method for producing metal thin film and method for producing conductive structure
JP5850077B2 (en)*2014-04-092016-02-03三菱マテリアル株式会社 Ag alloy film and sputtering target for forming Ag alloy film
EP3168325B1 (en)2015-11-102022-01-05Materion Advanced Materials Germany GmbHSilver alloy based sputter target
US10504999B2 (en)*2018-03-152019-12-10Taiwan Semiconductor Manufacturing Co., Ltd.Forming semiconductor structures with semimetal features
JP7062528B2 (en)*2018-06-142022-05-06株式会社ジャパンディスプレイ Semiconductor device

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication numberPriority datePublication dateAssigneeTitle
US1847941A (en)*1926-01-221932-03-01Oneida Community LtdMetal alloys and process of producing the same
JPH04311543A (en)*1991-04-091992-11-04Chugai Electric Ind Co LtdAg-sno-ino electrical contact material and production thereof
JP2506281B2 (en)*1991-08-051996-06-12ニッコー株式会社 Low temperature sintering multilayer substrate
AUPM365594A0 (en)*1994-02-021994-02-24Australian National University, TheMethod and apparatus for coating a substrate
JPH0856075A (en)*1994-08-171996-02-27Matsushita Electric Ind Co Ltd Method and board for inspecting joining state of electronic component having solder bumps
JPH10282907A (en)*1997-04-101998-10-23Toppan Printing Co Ltd Electrode substrate
JPH1138428A (en)*1997-07-221999-02-12Toppan Printing Co Ltd Electrode substrate and manufacturing method thereof
JPH1144887A (en)*1997-07-281999-02-16Toppan Printing Co Ltd Reflective electrode substrate for display device
JP4003273B2 (en)*1998-01-192007-11-07セイコーエプソン株式会社 Pattern forming method and substrate manufacturing apparatus
JPH11243273A (en)*1998-02-261999-09-07Hitachi Ltd Method of forming metal wiring
JP2001035814A (en)*1999-07-222001-02-09Vacuum Metallurgical Co LtdMethod of forming silver wiring pattern
JP2001237279A (en)*2000-02-232001-08-31Hitachi Ltd Semiconductor device and electronic device using the same
JP2002111001A (en)*2000-09-292002-04-12Toshiba Corp Wiring board and method of manufacturing wiring board
JP4646415B2 (en)*2001-02-082011-03-09株式会社倉元製作所 Ag-based thin film
JP3856386B2 (en)*2001-03-162006-12-13石福金属興業株式会社 Sputtering target material
JP3900248B2 (en)*2001-03-302007-04-04ハリマ化成株式会社 Multilayer wiring board and method for forming the same
KR100750922B1 (en)*2001-04-132007-08-22삼성전자주식회사 Wiring, a manufacturing method thereof, and a thin film transistor substrate including the wiring and a manufacturing method thereof
JP2003080694A (en)*2001-06-262003-03-19Seiko Epson Corp Film pattern forming method, film pattern forming apparatus, conductive film wiring, electro-optical device, electronic equipment, and non-contact card medium
KR100825102B1 (en)*2002-01-082008-04-25삼성전자주식회사 Thin film transistor substrate and its manufacturing method

Also Published As

Publication numberPublication date
KR100677805B1 (en)2007-02-02
KR20060041198A (en)2006-05-11
TWI319776B (en)2010-01-21
CN100339914C (en)2007-09-26
CN1577637A (en)2005-02-09
KR20050012154A (en)2005-01-31
US20050019203A1 (en)2005-01-27
KR100960181B1 (en)2010-05-26

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