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TW200502425A - Use of hypofluorites, fluoroperoxides, and/or fluorotrioxides as oxidizing agent in fluorocarbon etch plasmas - Google Patents

Use of hypofluorites, fluoroperoxides, and/or fluorotrioxides as oxidizing agent in fluorocarbon etch plasmas

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Publication number
TW200502425A
TW200502425ATW093120820ATW93120820ATW200502425ATW 200502425 ATW200502425 ATW 200502425ATW 093120820 ATW093120820 ATW 093120820ATW 93120820 ATW93120820 ATW 93120820ATW 200502425 ATW200502425 ATW 200502425A
Authority
TW
Taiwan
Prior art keywords
dielectric material
fluorotrioxides
fluoroperoxides
hypofluorites
oxidizing agent
Prior art date
Application number
TW093120820A
Other languages
English (en)
Other versions
TWI284370B (en
Inventor
Bing Ji
Stephen Andrew Motika
Robert George Syvret
Peter R Badowski
Eugene Joseph Karwacki
Howard Paul Withers
Ronald Martin Pearlstein
Original Assignee
Air Prod & Chem
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Air Prod & ChemfiledCriticalAir Prod & Chem
Publication of TW200502425ApublicationCriticalpatent/TW200502425A/zh
Application grantedgrantedCritical
Publication of TWI284370BpublicationCriticalpatent/TWI284370B/zh

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TW093120820A2003-07-152004-07-12Use of hypofluorites, fluoroperoxides, and/or fluorotrioxides as oxidizing agent in fluorocarbon etch plasmasTWI284370B (en)

Applications Claiming Priority (1)

Application NumberPriority DateFiling DateTitle
US10/619,922US20050014383A1 (en)2003-07-152003-07-15Use of hypofluorites, fluoroperoxides, and/or fluorotrioxides as oxidizing agent in fluorocarbon etch plasmas

Publications (2)

Publication NumberPublication Date
TW200502425Atrue TW200502425A (en)2005-01-16
TWI284370B TWI284370B (en)2007-07-21

Family

ID=33477084

Family Applications (1)

Application NumberTitlePriority DateFiling Date
TW093120820ATWI284370B (en)2003-07-152004-07-12Use of hypofluorites, fluoroperoxides, and/or fluorotrioxides as oxidizing agent in fluorocarbon etch plasmas

Country Status (7)

CountryLink
US (2)US20050014383A1 (zh)
EP (1)EP1498940A3 (zh)
JP (1)JP2005051236A (zh)
KR (1)KR100681281B1 (zh)
CN (1)CN1599038A (zh)
SG (1)SG111186A1 (zh)
TW (1)TWI284370B (zh)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication numberPriority datePublication dateAssigneeTitle
US20040219790A1 (en)*2003-04-302004-11-04Wilson Aaron REtching methods, RIE methods, and methods of increasing the stability of photoresist during RIE
US7442650B2 (en)*2007-01-102008-10-28International Business Machines CorporationMethods of manufacturing semiconductor structures using RIE process
CN101925983A (zh)*2007-12-212010-12-22苏威氟有限公司用于生产微机电系统的方法
DE102008037951B4 (de)*2008-08-142018-02-15Nawotec GmbhVerfahren und Vorrichtung zum elektronenstrahlinduzierten Ätzen von mit Gallium verunreinigten Schichten
DE102008037943B4 (de)*2008-08-142018-04-26Nawotec GmbhVerfahren und Vorrichtung zum elektronenstrahlinduzierten Ätzen und Halbleiterbauelement mit einer Struktur geätzt mittels eines derartigen Verfahrens
US8372756B2 (en)*2008-08-292013-02-12Air Products And Chemicals, Inc.Selective etching of silicon dioxide compositions
US20110073136A1 (en)*2009-09-102011-03-31Matheson Tri-Gas, Inc.Removal of gallium and gallium containing materials
US20110061812A1 (en)*2009-09-112011-03-17Applied Materials, Inc.Apparatus and Methods for Cyclical Oxidation and Etching
JP5655296B2 (ja)*2009-12-012015-01-21セントラル硝子株式会社エッチングガス
JP2014036148A (ja)*2012-08-092014-02-24Tokyo Electron Ltd多層膜をエッチングする方法、及びプラズマ処理装置
CN107275206B (zh)2012-10-302021-03-26乔治洛德方法研究和开发液化空气有限公司用于高纵横比氧化物蚀刻的氟碳分子
JP2016051777A (ja)*2014-08-292016-04-11日本ゼオン株式会社シリコン酸化膜のプラズマエッチング方法
US9607843B2 (en)*2015-02-132017-03-28Tokyo Electron LimitedMethod for roughness improvement and selectivity enhancement during arc layer etch via adjustment of carbon-fluorine content
JP2017050413A (ja)*2015-09-022017-03-09日本ゼオン株式会社プラズマエッチング方法
US9496148B1 (en)*2015-09-102016-11-15International Business Machines CorporationMethod of charge controlled patterning during reactive ion etching
KR102303686B1 (ko)*2017-02-282021-09-17샌트랄 글래스 컴퍼니 리미티드드라이 에칭제, 드라이 에칭 방법 및 반도체 장치의 제조방법
US10276439B2 (en)2017-06-022019-04-30International Business Machines CorporationRapid oxide etch for manufacturing through dielectric via structures
KR102388963B1 (ko)2020-05-072022-04-20아주대학교산학협력단퍼플루오로프로필카비놀(Perfluoropropyl carbinol)을 이용한 플라즈마 식각 방법
EP4181176A4 (en)*2020-07-092024-02-21Resonac Corporation ETCHING METHOD AND METHOD FOR PRODUCING A SEMICONDUCTOR ELEMENT
KR102582730B1 (ko)*2021-04-072023-09-25(주)후성플루오르화 시클로프로판 가스의 제조방법 및 이를 포함하는 에칭용 가스 조성물
CN114409514B (zh)*2021-12-212023-07-18西安近代化学研究所一种1,1,1,4,4,4-六氟-2-丁酮的合成方法

Family Cites Families (39)

* Cited by examiner, † Cited by third party
Publication numberPriority datePublication dateAssigneeTitle
US3202718A (en)*1960-06-201965-08-24Du PontSynthesis of bis (trifluoromethyl) peroxide
US3122463A (en)*1961-03-071964-02-25Bell Telephone Labor IncEtching technique for fabricating semiconductor or ceramic devices
US3436424A (en)*1966-09-201969-04-01Allied ChemProcess for preparing bis(trifluoromethyl)trioxide
US3467718A (en)*1967-07-101969-09-16Minnesota Mining & MfgFluorocarbon compounds
US3576837A (en)*1968-08-221971-04-27Allied ChemProcess for preparatin of bisctrifloro-methyl trioxide and fluoroformyl trifluoromethyl peroxide
US3622601A (en)*1969-02-171971-11-23Monsanto Res CorpFluorinated epoxide
US3634483A (en)*1969-05-271972-01-11Us Air ForceProcess for preparing compounds containing the oof group
US4213818A (en)*1979-01-041980-07-22Signetics CorporationSelective plasma vapor etching process
DD145348A1 (de)*1979-08-061980-12-03Wilfried HelmstreitVerfahren zum reaktiven ionenstrahlsaetzen von silizium und siliziumverbindungen
US4473435A (en)*1983-03-231984-09-25DrytekPlasma etchant mixture
IT1249208B (it)*1990-06-071995-02-20Ausimont SrlProcesso per la preparazione di 1,3-diossolani alogenati e nuovi prodotti ottenuti
JP3038950B2 (ja)*1991-02-122000-05-08ソニー株式会社ドライエッチング方法
US5176790A (en)*1991-09-251993-01-05Applied Materials, Inc.Process for forming a via in an integrated circuit structure by etching through an insulation layer while inhibiting sputtering of underlying metal
US5445712A (en)*1992-03-251995-08-29Sony CorporationDry etching method
JP3252518B2 (ja)*1993-03-192002-02-04ソニー株式会社ドライエッチング方法
US5831131A (en)*1995-08-301998-11-03E. I. Du Pont De Nemours And CompanyProcess for preparing peroxides
US5814563A (en)*1996-04-291998-09-29Applied Materials, Inc.Method for etching dielectric using fluorohydrocarbon gas, NH3 -generating gas, and carbon-oxygen gas
EP0871213A3 (en)*1997-03-271999-03-03Siemens AktiengesellschaftMethod for producing vias having variable sidewall profile
US5989929A (en)*1997-07-221999-11-23Matsushita Electronics CorporationApparatus and method for manufacturing semiconductor device
WO1999008805A1 (en)*1997-08-201999-02-25Air Liquide Electronics Chemicals & Services, Inc.Plasma cleaning and etching methods using non-global-warming compounds
EP0911697A3 (en)*1997-10-221999-09-15Interuniversitair Microelektronica Centrum VzwA fluorinated hard mask for micropatterning of polymers
JP3283477B2 (ja)1997-10-272002-05-20松下電器産業株式会社ドライエッチング方法および半導体装置の製造方法
JP2903109B2 (ja)*1997-12-011999-06-07工業技術院長モノ又はテトラフルオロエチルトリフルオロメチルエーテルの製造方法
TW466266B (en)*1997-12-182001-12-01Central Glass Co LtdGas for removing deposit and removal method using same
US6174451B1 (en)*1998-03-272001-01-16Applied Materials, Inc.Oxide etch process using hexafluorobutadiene and related unsaturated hydrofluorocarbons
US6387287B1 (en)*1998-03-272002-05-14Applied Materials, Inc.Process for etching oxide using a hexafluorobutadiene and manifesting a wide process window
JP3143650B2 (ja)*1999-03-252001-03-07工業技術院長新規なフルオロオレフィンエーテル及びその製造方法
US6214670B1 (en)*1999-07-222001-04-10Taiwan Semiconductor Manufacturing CompanyMethod for manufacturing short-channel, metal-gate CMOS devices with superior hot carrier performance
KR100338769B1 (ko)*1999-10-262002-05-30윤종용반도체 장치의 절연막 식각방법
US6326307B1 (en)*1999-11-152001-12-04Appllied Materials, Inc.Plasma pretreatment of photoresist in an oxide etch process
US6432318B1 (en)*2000-02-172002-08-13Applied Materials, Inc.Dielectric etch process reducing striations and maintaining critical dimensions
US6451703B1 (en)*2000-03-102002-09-17Applied Materials, Inc.Magnetically enhanced plasma etch process using a heavy fluorocarbon etching gas
US6362109B1 (en)*2000-06-022002-03-26Applied Materials, Inc.Oxide/nitride etching having high selectivity to photoresist
US6403491B1 (en)*2000-11-012002-06-11Applied Materials, Inc.Etch method using a dielectric etch chamber with expanded process window
US6797639B2 (en)*2000-11-012004-09-28Applied Materials Inc.Dielectric etch chamber with expanded process window
JP2002184765A (ja)*2000-12-182002-06-28Central Glass Co Ltdクリーニングガス
WO2002066408A2 (en)*2001-02-232002-08-29Showa Denko K.K.Process for producing perfluorocarbons and use thereof
JP2002280376A (ja)*2001-03-222002-09-27Research Institute Of Innovative Technology For The EarthCvd装置のクリーニング方法およびそのためのクリーニング装置
JP4205325B2 (ja)*2001-09-122009-01-07セントラル硝子株式会社トリフルオロメチルハイポフルオライトの製造方法

Also Published As

Publication numberPublication date
CN1599038A (zh)2005-03-23
US20050014383A1 (en)2005-01-20
US20070224829A1 (en)2007-09-27
KR100681281B1 (ko)2007-02-12
KR20050008489A (ko)2005-01-21
EP1498940A3 (en)2005-08-24
JP2005051236A (ja)2005-02-24
EP1498940A2 (en)2005-01-19
SG111186A1 (en)2005-05-30
TWI284370B (en)2007-07-21

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