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SG169329A1 - Methods for fabricating and filling conductive vias and conductive vias so formed - Google Patents

Methods for fabricating and filling conductive vias and conductive vias so formed

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Publication number
SG169329A1
SG169329A1SG201100384-5ASG2011003845ASG169329A1SG 169329 A1SG169329 A1SG 169329A1SG 2011003845 ASG2011003845 ASG 2011003845ASG 169329 A1SG169329 A1SG 169329A1
Authority
SG
Singapore
Prior art keywords
conductive vias
methods
via holes
semiconductor devices
fabricating
Prior art date
Application number
SG201100384-5A
Inventor
Salman Akram
William Mark Hiatt
Steve Oliver
Alan G Wood
Sidney B Rigg
James M Wark
Kyle K Kirby
Original Assignee
Micron Technology Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Micron Technology IncfiledCriticalMicron Technology Inc
Publication of SG169329A1publicationCriticalpatent/SG169329A1/en

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Abstract

Methods for forming conductive vias include forming one or more via holes in a substrate. The via holes may be formed with a single mask, with the protective layers, bond pads, or other features of the substrate acting as hard masks in the event that a photomask is removed during etching processes. The via holes may be configured to facilitate adhesion of a dielectric coating that includes a low-K dielectric material to the surfaces thereof. A barrier layer may be formed over surfaces of each via hole. A base layer, which may comprise a seed material, may be formed to facilitate the subsequent, selective deposition of conductive material over the surfaces of the via hole. The resulting semiconductor devices, intermediate structures, and assemblies and electronic devices that include the semiconductor devices that result from these methods arc also disclosed. FIG.11
SG201100384-5A2006-02-032007-01-26Methods for fabricating and filling conductive vias and conductive vias so formedSG169329A1 (en)

Applications Claiming Priority (1)

Application NumberPriority DateFiling DateTitle
US11/347,153US7892972B2 (en)2006-02-032006-02-03Methods for fabricating and filling conductive vias and conductive vias so formed

Publications (1)

Publication NumberPublication Date
SG169329A1true SG169329A1 (en)2011-03-30

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ID=38328506

Family Applications (1)

Application NumberTitlePriority DateFiling Date
SG201100384-5ASG169329A1 (en)2006-02-032007-01-26Methods for fabricating and filling conductive vias and conductive vias so formed

Country Status (7)

CountryLink
US (3)US7892972B2 (en)
EP (2)EP3474319B1 (en)
JP (2)JP5360648B2 (en)
KR (2)KR101114202B1 (en)
SG (1)SG169329A1 (en)
TW (1)TWI350574B (en)
WO (1)WO2007092176A2 (en)

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US12020979B2 (en)2017-07-142024-06-25Micron Technology, Inc.Methods of forming material within openings extending into a semiconductor construction, and semiconductor constructions having fluorocarbon material

Also Published As

Publication numberPublication date
EP1984947A2 (en)2008-10-29
TW200733279A (en)2007-09-01
JP2012238862A (en)2012-12-06
EP3474319A1 (en)2019-04-24
KR20080098513A (en)2008-11-10
US7892972B2 (en)2011-02-22
JP2009525613A (en)2009-07-09
US20110095429A1 (en)2011-04-28
JP5360648B2 (en)2013-12-04
US20070184654A1 (en)2007-08-09
WO2007092176A2 (en)2007-08-16
KR101114202B1 (en)2012-02-22
WO2007092176A3 (en)2007-11-08
JP5686768B2 (en)2015-03-18
US20110136336A1 (en)2011-06-09
KR101559192B1 (en)2015-10-13
US8294273B2 (en)2012-10-23
EP1984947B1 (en)2018-12-05
KR20110053497A (en)2011-05-23
TWI350574B (en)2011-10-11
EP3474319B1 (en)2025-03-12
US8324100B2 (en)2012-12-04

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