| US6482262B1 (en) | 1959-10-10 | 2002-11-19 | Asm Microchemistry Oy | Deposition of transition metal carbides |
| US4524587A (en) | 1967-01-10 | 1985-06-25 | Kantor Frederick W | Rotary thermodynamic apparatus and method |
| US3684592A (en) | 1969-09-30 | 1972-08-15 | Westinghouse Electric Corp | Passivated surfaces and protective coatings for semiconductor devices and processes for producing the same |
| US3758316A (en) | 1971-03-30 | 1973-09-11 | Du Pont | Refractory materials and process for making same |
| US3749383A (en) | 1971-04-29 | 1973-07-31 | Rca Corp | Apparatus for processing semiconductor devices |
| US4409260A (en) | 1979-08-15 | 1983-10-11 | Hughes Aircraft Company | Process for low-temperature surface layer oxidation of a semiconductor substrate |
| US4424101A (en) | 1980-11-06 | 1984-01-03 | The Perkin-Elmer Corp. | Method of depositing doped refractory metal silicides using DC magnetron/RF diode mode co-sputtering techniques |
| US4589193A (en) | 1984-06-29 | 1986-05-20 | International Business Machines Corporation | Metal silicide channel stoppers for integrated circuits and method for making the same |
| US4576652A (en) | 1984-07-12 | 1986-03-18 | International Business Machines Corporation | Incoherent light annealing of gallium arsenide substrate |
| JPS634616A (en) | 1986-06-25 | 1988-01-09 | Hitachi Tokyo Electron Co Ltd | Steam treating unit |
| JPS6367721A (en) | 1986-09-09 | 1988-03-26 | Meidensha Electric Mfg Co Ltd | Manufacture of amorphous carbon semiconductor film |
| JPH0748489B2 (en) | 1987-07-27 | 1995-05-24 | 富士通株式会社 | Plasma processing device |
| US4879259A (en) | 1987-09-28 | 1989-11-07 | The Board Of Trustees Of The Leland Stanford Junion University | Rapid thermal annealing of gallium arsenide with trimethyl arsenic overpressure |
| CA1308496C (en) | 1988-02-18 | 1992-10-06 | Rajiv V. Joshi | Deposition of tungsten on silicon in a non-self-limiting cvd process |
| US5114513A (en) | 1988-10-27 | 1992-05-19 | Omron Tateisi Electronics Co. | Optical device and manufacturing method thereof |
| US5167717A (en) | 1989-02-15 | 1992-12-01 | Charles Boitnott | Apparatus and method for processing a semiconductor wafer |
| JP2730695B2 (en) | 1989-04-10 | 1998-03-25 | 忠弘 大見 | Tungsten film forming equipment |
| US5126117A (en) | 1990-05-22 | 1992-06-30 | Custom Engineered Materials, Inc. | Device for preventing accidental releases of hazardous gases |
| US5175123A (en) | 1990-11-13 | 1992-12-29 | Motorola, Inc. | High-pressure polysilicon encapsulated localized oxidation of silicon |
| US5050540A (en) | 1991-01-29 | 1991-09-24 | Arne Lindberg | Method of gas blanketing a boiler |
| JP2996524B2 (en) | 1991-03-18 | 2000-01-11 | 松下電子工業株式会社 | Polyimide curing device |
| ATE251342T1 (en) | 1991-05-28 | 2003-10-15 | Trikon Technologies Ltd | METHOD FOR FILLING A CAVITY IN A SUBSTRATE |
| US5314541A (en) | 1991-05-28 | 1994-05-24 | Tokyo Electron Limited | Reduced pressure processing system and reduced pressure processing method |
| US6238588B1 (en) | 1991-06-27 | 2001-05-29 | Applied Materials, Inc. | High pressure high non-reactive diluent gas content high plasma ion density plasma oxide etch process |
| JPH0521347A (en) | 1991-07-11 | 1993-01-29 | Canon Inc | Sputtering device |
| JPH0521310A (en) | 1991-07-11 | 1993-01-29 | Canon Inc | Formation of fine pattern |
| JPH05129296A (en) | 1991-11-05 | 1993-05-25 | Fujitsu Ltd | Method of flatting conductive film |
| US5300320A (en) | 1992-06-23 | 1994-04-05 | President And Fellows Of Harvard College | Chemical vapor deposition from single organometallic precursors |
| US5319212A (en) | 1992-10-07 | 1994-06-07 | Genus, Inc. | Method of monitoring ion beam current in ion implantation apparatus for use in manufacturing semiconductors |
| JPH06283496A (en) | 1993-03-26 | 1994-10-07 | Dainippon Screen Mfg Co Ltd | Dryer of substrate after washing |
| US5607002A (en) | 1993-04-28 | 1997-03-04 | Advanced Delivery & Chemical Systems, Inc. | Chemical refill system for high purity chemicals |
| US5578132A (en) | 1993-07-07 | 1996-11-26 | Tokyo Electron Kabushiki Kaisha | Apparatus for heat treating semiconductors at normal pressure and low pressure |
| JPH0766424A (en) | 1993-08-20 | 1995-03-10 | Semiconductor Energy Lab Co Ltd | Semiconductor device and manufacturing method thereof |
| JPH07158767A (en) | 1993-12-09 | 1995-06-20 | Kokusai Electric Co Ltd | Gate valve |
| US5460689A (en) | 1994-02-28 | 1995-10-24 | Applied Materials, Inc. | High pressure plasma treatment method and apparatus |
| US5880041A (en) | 1994-05-27 | 1999-03-09 | Motorola Inc. | Method for forming a dielectric layer using high pressure |
| US5597439A (en) | 1994-10-26 | 1997-01-28 | Applied Materials, Inc. | Process gas inlet and distribution passages |
| US5808245A (en) | 1995-01-03 | 1998-09-15 | Donaldson Company, Inc. | Vertical mount catalytic converter muffler |
| JPH08195493A (en) | 1995-01-13 | 1996-07-30 | Toshiba Corp | Method for manufacturing thin film transistor |
| US5620524A (en) | 1995-02-27 | 1997-04-15 | Fan; Chiko | Apparatus for fluid delivery in chemical vapor deposition systems |
| KR100251341B1 (en) | 1995-05-08 | 2000-05-01 | 오카노 사다오 | Manufacturing method of optical waveguide |
| JP2872637B2 (en) | 1995-07-10 | 1999-03-17 | アプライド マテリアルズ インコーポレイテッド | Microwave plasma based applicator |
| JP3684624B2 (en) | 1995-08-02 | 2005-08-17 | ソニー株式会社 | Reaction gas supply device |
| US5747383A (en) | 1995-09-05 | 1998-05-05 | Taiwan Semiconductor Manufacturing Company Ltd | Method for forming conductive lines and stacked vias |
| JP4222232B2 (en)* | 1995-09-22 | 2009-02-12 | セイコーエプソン株式会社 | Thin film transistor manufacturing method |
| US5857368A (en) | 1995-10-06 | 1999-01-12 | Applied Materials, Inc. | Apparatus and method for fabricating metal paths in semiconductor substrates through high pressure extrusion |
| US5877087A (en) | 1995-11-21 | 1999-03-02 | Applied Materials, Inc. | Low temperature integrated metallization process and apparatus |
| JPH09296267A (en) | 1995-11-21 | 1997-11-18 | Applied Materials Inc | Apparatus and method for manufacturing metal path in semiconductor substrate by high-pressure extrusion |
| US5677230A (en) | 1995-12-01 | 1997-10-14 | Motorola | Method of making wide bandgap semiconductor devices |
| US6077571A (en) | 1995-12-19 | 2000-06-20 | The Research Foundation Of State University Of New York | Conformal pure and doped aluminum coatings and a methodology and apparatus for their preparation |
| US5895274A (en) | 1996-01-22 | 1999-04-20 | Micron Technology, Inc. | High-pressure anneal process for integrated circuits |
| US5918149A (en) | 1996-02-16 | 1999-06-29 | Advanced Micro Devices, Inc. | Deposition of a conductor in a via hole or trench |
| KR980012044A (en) | 1996-03-01 | 1998-04-30 | 히가시 데츠로 | Substrate drying apparatus and substrate drying method |
| US5998305A (en) | 1996-03-29 | 1999-12-07 | Praxair Technology, Inc. | Removal of carbon from substrate surfaces |
| US5738915A (en) | 1996-09-19 | 1998-04-14 | Lambda Technologies, Inc. | Curing polymer layers on semiconductor substrates using variable frequency microwave energy |
| US6444037B1 (en) | 1996-11-13 | 2002-09-03 | Applied Materials, Inc. | Chamber liner for high temperature processing chamber |
| US6082950A (en) | 1996-11-18 | 2000-07-04 | Applied Materials, Inc. | Front end wafer staging with wafer cassette turntables and on-the-fly wafer center finding |
| US5886864A (en) | 1996-12-02 | 1999-03-23 | Applied Materials, Inc. | Substrate support member for uniform heating of a substrate |
| US6071810A (en) | 1996-12-24 | 2000-06-06 | Kabushiki Kaisha Toshiba | Method of filling contact holes and wiring grooves of a semiconductor device |
| US5888888A (en) | 1997-01-29 | 1999-03-30 | Ultratech Stepper, Inc. | Method for forming a silicide region on a silicon body |
| JP2980052B2 (en) | 1997-03-31 | 1999-11-22 | 日本電気株式会社 | Method for manufacturing semiconductor device |
| US6334249B2 (en) | 1997-04-22 | 2002-01-01 | Texas Instruments Incorporated | Cavity-filling method for reducing surface topography and roughness |
| KR100560049B1 (en) | 1997-05-10 | 2006-05-25 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | A film forming method |
| JP2976931B2 (en) | 1997-06-04 | 1999-11-10 | 日本電気株式会社 | Method for manufacturing semiconductor device |
| US6309713B1 (en) | 1997-06-30 | 2001-10-30 | Applied Materials, Inc. | Deposition of tungsten nitride by plasma enhanced chemical vapor deposition |
| US6136664A (en) | 1997-08-07 | 2000-10-24 | International Business Machines Corporation | Filling of high aspect ratio trench isolation |
| US20030049372A1 (en) | 1997-08-11 | 2003-03-13 | Cook Robert C. | High rate deposition at low pressures in a small batch reactor |
| KR100261017B1 (en) | 1997-08-19 | 2000-08-01 | 윤종용 | Method for Forming Metal Wiring Layer of Semiconductor Device |
| US6348376B2 (en) | 1997-09-29 | 2002-02-19 | Samsung Electronics Co., Ltd. | Method of forming metal nitride film by chemical vapor deposition and method of forming metal contact and capacitor of semiconductor device using the same |
| US5963817A (en) | 1997-10-16 | 1999-10-05 | International Business Machines Corporation | Bulk and strained silicon on insulator using local selective oxidation |
| JP3199006B2 (en) | 1997-11-18 | 2001-08-13 | 日本電気株式会社 | Method of forming interlayer insulating film and insulating film forming apparatus |
| US6442980B2 (en) | 1997-11-26 | 2002-09-03 | Chart Inc. | Carbon dioxide dry cleaning system |
| US6140235A (en) | 1997-12-05 | 2000-10-31 | Applied Materials, Inc. | High pressure copper fill at low temperature |
| KR100275727B1 (en) | 1998-01-06 | 2001-01-15 | 윤종용 | Capacitor for semiconductor device & manufacturing method |
| JP3296281B2 (en) | 1998-01-22 | 2002-06-24 | 日本電気株式会社 | Sputtering apparatus and sputtering method |
| US6846739B1 (en) | 1998-02-27 | 2005-01-25 | Micron Technology, Inc. | MOCVD process using ozone as a reactant to deposit a metal oxide barrier layer |
| US6164412A (en) | 1998-04-03 | 2000-12-26 | Arvin Industries, Inc. | Muffler |
| JP3955386B2 (en) | 1998-04-09 | 2007-08-08 | 富士通株式会社 | Semiconductor device and manufacturing method thereof |
| JPH11354515A (en) | 1998-06-04 | 1999-12-24 | Ishikawajima Harima Heavy Ind Co Ltd | Pressurized heating furnace |
| US6103585A (en) | 1998-06-09 | 2000-08-15 | Siemens Aktiengesellschaft | Method of forming deep trench capacitors |
| KR100319888B1 (en) | 1998-06-16 | 2002-01-10 | 윤종용 | Method of forming selective metal layer and method of forming capacitor and filling contact hole using the same |
| KR100287180B1 (en) | 1998-09-17 | 2001-04-16 | 윤종용 | Method for manufacturing semiconductor device including metal interconnection formed using interface control layer |
| US6719516B2 (en) | 1998-09-28 | 2004-04-13 | Applied Materials, Inc. | Single wafer load lock with internal wafer transport |
| KR100327328B1 (en) | 1998-10-13 | 2002-05-09 | 윤종용 | Method for forming dielectric layer of capacitor having partially different thickness in the layer |
| US20030101938A1 (en) | 1998-10-27 | 2003-06-05 | Applied Materials, Inc. | Apparatus for the deposition of high dielectric constant films |
| KR100331544B1 (en) | 1999-01-18 | 2002-04-06 | 윤종용 | Method for introducing gases into a reactor chamber and a shower head used therein |
| JP2000221799A (en) | 1999-01-29 | 2000-08-11 | Canon Inc | Image forming device |
| KR100804853B1 (en) | 1999-03-04 | 2008-02-20 | 서페이스 테크놀로지 시스템스 피엘씨 | Chlorine Trifluoride Gas Generator System |
| US6305314B1 (en) | 1999-03-11 | 2001-10-23 | Genvs, Inc. | Apparatus and concept for minimizing parasitic chemical vapor deposition during atomic layer deposition |
| JP4096440B2 (en) | 1999-03-11 | 2008-06-04 | 三菱瓦斯化学株式会社 | Multilayer molded product |
| US6200893B1 (en) | 1999-03-11 | 2001-03-13 | Genus, Inc | Radical-assisted sequential CVD |
| WO2000060659A1 (en) | 1999-04-02 | 2000-10-12 | Silicon Valley Group, Thermal Systems Llc | Improved trench isolation process to deposit a trench fill oxide prior to sidewall liner oxidation growth |
| JP3892621B2 (en) | 1999-04-19 | 2007-03-14 | 株式会社神戸製鋼所 | Method for forming wiring film |
| US6086730A (en) | 1999-04-22 | 2000-07-11 | Komag, Incorporated | Method of sputtering a carbon protective film on a magnetic disk with high sp3 content |
| JP2000340671A (en) | 1999-05-26 | 2000-12-08 | Fujitsu Ltd | Semiconductor device manufacturing method and semiconductor device |
| JP2001053066A (en) | 1999-05-28 | 2001-02-23 | Tokyo Electron Ltd | Ozone processor and ozone processing method |
| US6355558B1 (en) | 1999-06-10 | 2002-03-12 | Texas Instruments Incorporated | Metallization structure, and associated method, to improve crystallographic texture and cavity fill for CVD aluminum/PVD aluminum alloy films |
| JP2000357699A (en) | 1999-06-16 | 2000-12-26 | Seiko Epson Corp | Semiconductor device |
| EP1069213A3 (en) | 1999-07-12 | 2004-01-28 | Applied Materials, Inc. | Optimal anneal technology for micro-voiding control and self-annealing management of electroplated copper |
| US6468490B1 (en) | 2000-06-29 | 2002-10-22 | Applied Materials, Inc. | Abatement of fluorine gas from effluent |
| US6334266B1 (en) | 1999-09-20 | 2002-01-01 | S.C. Fluids, Inc. | Supercritical fluid drying system and method of use |
| US6612317B2 (en) | 2000-04-18 | 2003-09-02 | S.C. Fluids, Inc | Supercritical fluid delivery and recovery system for semiconductor wafer processing |
| EP1077477B1 (en) | 1999-08-17 | 2008-12-17 | Applied Materials, Inc. | Surface treatment of C-doped SiO2 film to enhance film stability during O2 ashing |
| US6299753B1 (en) | 1999-09-01 | 2001-10-09 | Applied Materials, Inc. | Double pressure vessel chemical dispenser unit |
| US6511539B1 (en) | 1999-09-08 | 2003-01-28 | Asm America, Inc. | Apparatus and method for growth of a thin film |
| JP2001110729A (en) | 1999-10-06 | 2001-04-20 | Mitsubishi Heavy Ind Ltd | Apparratus for continuously manufacturing method of semiconductor element |
| FI117942B (en) | 1999-10-14 | 2007-04-30 | Asm Int | Process for making oxide thin films |
| KR100304714B1 (en) | 1999-10-20 | 2001-11-02 | 윤종용 | Method for fabricating metal layer of semiconductor device using metal-halide gas |
| US6444372B1 (en) | 1999-10-25 | 2002-09-03 | Svg Lithography Systems, Inc. | Non absorbing reticle and method of making same |
| US20030148631A1 (en) | 1999-11-08 | 2003-08-07 | Taiwan Semiconductor Manufacturing Company | Oxidative annealing method for forming etched spin-on-glass (SOG) planarizing layer with uniform etch profile |
| US6500603B1 (en) | 1999-11-11 | 2002-12-31 | Mitsui Chemicals, Inc. | Method for manufacturing polymer optical waveguide |
| KR100629255B1 (en) | 1999-11-12 | 2006-09-29 | 삼성전자주식회사 | Baking device for semiconductor photo process |
| KR100321561B1 (en) | 1999-11-16 | 2002-01-23 | 박호군 | Method of Manufacturing Ferroelectric Thin Film of Mixed Oxides Containing Volatile Components |
| US6399486B1 (en) | 1999-11-22 | 2002-06-04 | Taiwan Semiconductor Manufacturing Company | Method of improved copper gap fill |
| TW484170B (en) | 1999-11-30 | 2002-04-21 | Applied Materials Inc | Integrated modular processing platform |
| US6344419B1 (en) | 1999-12-03 | 2002-02-05 | Applied Materials, Inc. | Pulsed-mode RF bias for sidewall coverage improvement |
| US6969448B1 (en) | 1999-12-30 | 2005-11-29 | Cypress Semiconductor Corp. | Method for forming a metallization structure in an integrated circuit |
| US6150286A (en) | 2000-01-03 | 2000-11-21 | Advanced Micro Devices, Inc. | Method of making an ultra thin silicon nitride film |
| FI20000099A0 (en) | 2000-01-18 | 2000-01-18 | Asm Microchemistry Ltd | A method for growing thin metal films |
| US6541367B1 (en) | 2000-01-18 | 2003-04-01 | Applied Materials, Inc. | Very low dielectric constant plasma-enhanced CVD films |
| US6277249B1 (en) | 2000-01-21 | 2001-08-21 | Applied Materials Inc. | Integrated process for copper via filling using a magnetron and target producing highly energetic ions |
| US6251242B1 (en) | 2000-01-21 | 2001-06-26 | Applied Materials, Inc. | Magnetron and target producing an extended plasma region in a sputter reactor |
| US6319766B1 (en) | 2000-02-22 | 2001-11-20 | Applied Materials, Inc. | Method of tantalum nitride deposition by tantalum oxide densification |
| JP2001250787A (en) | 2000-03-06 | 2001-09-14 | Hitachi Kokusai Electric Inc | Substrate processing apparatus and substrate processing method |
| JP5016767B2 (en) | 2000-03-07 | 2012-09-05 | エーエスエム インターナショナル エヌ．ヴェー． | Method for forming gradient thin film |
| US6506653B1 (en) | 2000-03-13 | 2003-01-14 | International Business Machines Corporation | Method using disposable and permanent films for diffusion and implant doping |
| JP4637989B2 (en) | 2000-03-24 | 2011-02-23 | 株式会社神戸製鋼所 | Method for forming semiconductor wiring film |
| FI117979B (en) | 2000-04-14 | 2007-05-15 | Asm Int | Process for making oxide thin films |
| US20040025908A1 (en) | 2000-04-18 | 2004-02-12 | Stephen Douglas | Supercritical fluid delivery system for semiconductor wafer processing |
| KR100363088B1 (en) | 2000-04-20 | 2002-12-02 | 삼성전자 주식회사 | Method of manufacturing barrier metal layer using atomic layer deposition method |
| US6482733B2 (en) | 2000-05-15 | 2002-11-19 | Asm Microchemistry Oy | Protective layers prior to alternating layer deposition |
| JP5173101B2 (en) | 2000-05-15 | 2013-03-27 | エイエスエム インターナショナル エヌ．ヴェー． | Integrated circuit manufacturing method |
| US6921722B2 (en) | 2000-05-30 | 2005-07-26 | Ebara Corporation | Coating, modification and etching of substrate surface with particle beam irradiation of the same |
| US6620723B1 (en) | 2000-06-27 | 2003-09-16 | Applied Materials, Inc. | Formation of boride barrier layers using chemisorption techniques |
| US7964505B2 (en) | 2005-01-19 | 2011-06-21 | Applied Materials, Inc. | Atomic layer deposition of tungsten materials |
| US6551929B1 (en) | 2000-06-28 | 2003-04-22 | Applied Materials, Inc. | Bifurcated deposition process for depositing refractory metal layers employing atomic layer deposition and chemical vapor deposition techniques |
| US6585823B1 (en) | 2000-07-07 | 2003-07-01 | Asm International, N.V. | Atomic layer deposition |
| US7166524B2 (en) | 2000-08-11 | 2007-01-23 | Applied Materials, Inc. | Method for ion implanting insulator material to reduce dielectric constant |
| US6660660B2 (en) | 2000-10-10 | 2003-12-09 | Asm International, Nv. | Methods for making a dielectric stack in an integrated circuit |
| KR100385947B1 (en) | 2000-12-06 | 2003-06-02 | 삼성전자주식회사 | Method of forming thin film by atomic layer deposition |
| US6416822B1 (en) | 2000-12-06 | 2002-07-09 | Angstrom Systems, Inc. | Continuous method for depositing a film by modulated ion-induced atomic layer deposition (MII-ALD) |
| US6428859B1 (en) | 2000-12-06 | 2002-08-06 | Angstron Systems, Inc. | Sequential method for depositing a film by modulated ion-induced atomic layer deposition (MII-ALD) |
| US6630201B2 (en) | 2001-04-05 | 2003-10-07 | Angstron Systems, Inc. | Adsorption process for atomic layer deposition |
| US6464779B1 (en) | 2001-01-19 | 2002-10-15 | Novellus Systems, Inc. | Copper atomic layer chemical vapor desposition |
| US6852167B2 (en) | 2001-03-01 | 2005-02-08 | Micron Technology, Inc. | Methods, systems, and apparatus for uniform chemical-vapor depositions |
| JP4335469B2 (en) | 2001-03-22 | 2009-09-30 | 株式会社荏原製作所 | Method and apparatus for adjusting gas circulation rate of vacuum exhaust device |
| US6797336B2 (en) | 2001-03-22 | 2004-09-28 | Ambp Tech Corporation | Multi-component substances and processes for preparation thereof |
| TW544797B (en) | 2001-04-17 | 2003-08-01 | Kobe Steel Ltd | High-pressure processing apparatus |
| JP2002319571A (en) | 2001-04-20 | 2002-10-31 | Kawasaki Microelectronics Kk | Preprocessing method for etching tank and manufacturing method for semiconductor device |
| US7080651B2 (en) | 2001-05-17 | 2006-07-25 | Dainippon Screen Mfg. Co., Ltd. | High pressure processing apparatus and method |
| KR100433846B1 (en) | 2001-05-23 | 2004-06-04 | 주식회사 하이닉스반도체 | Method for forming the Metal Layer Of Semiconductor Device |
| US6752585B2 (en) | 2001-06-13 | 2004-06-22 | Applied Materials Inc | Method and apparatus for transferring a semiconductor substrate |
| EP1271636A1 (en) | 2001-06-22 | 2003-01-02 | Infineon Technologies AG | Thermal oxidation process control by controlling oxidation agent partial pressure |
| US20080268635A1 (en) | 2001-07-25 | 2008-10-30 | Sang-Ho Yu | Process for forming cobalt and cobalt silicide materials in copper contact applications |
| US20030029715A1 (en) | 2001-07-25 | 2003-02-13 | Applied Materials, Inc. | An Apparatus For Annealing Substrates In Physical Vapor Deposition Systems |
| US9051641B2 (en) | 2001-07-25 | 2015-06-09 | Applied Materials, Inc. | Cobalt deposition on barrier surfaces |
| JP2003051474A (en) | 2001-08-03 | 2003-02-21 | Kobe Steel Ltd | High-pressure processing apparatus |
| US6889627B1 (en) | 2001-08-08 | 2005-05-10 | Lam Research Corporation | Symmetrical semiconductor reactor |
| US6781801B2 (en) | 2001-08-10 | 2004-08-24 | Seagate Technology Llc | Tunneling magnetoresistive sensor with spin polarized current injection |
| US6531412B2 (en) | 2001-08-10 | 2003-03-11 | International Business Machines Corporation | Method for low temperature chemical vapor deposition of low-k films using selected cyclosiloxane and ozone gases for semiconductor applications |
| JP2003077974A (en) | 2001-08-31 | 2003-03-14 | Hitachi Kokusai Electric Inc | Substrate processing apparatus and method of manufacturing semiconductor device |
| US6619304B2 (en) | 2001-09-13 | 2003-09-16 | Micell Technologies, Inc. | Pressure chamber assembly including non-mechanical drive means |
| US6607976B2 (en) | 2001-09-25 | 2003-08-19 | Applied Materials, Inc. | Copper interconnect barrier layer structure and formation method |
| US20030059538A1 (en) | 2001-09-26 | 2003-03-27 | Applied Materials, Inc. | Integration of barrier layer and seed layer |
| US7105061B1 (en) | 2001-11-07 | 2006-09-12 | Novellus Systems, Inc. | Method and apparatus for sealing substrate load port in a high pressure reactor |
| US6620956B2 (en) | 2001-11-16 | 2003-09-16 | Applied Materials, Inc. | Nitrogen analogs of copper II β-diketonates as source reagents for semiconductor processing |
| US20030098069A1 (en) | 2001-11-26 | 2003-05-29 | Sund Wesley E. | High purity fluid delivery system |
| JP2003166065A (en) | 2001-11-30 | 2003-06-13 | Sekisui Chem Co Ltd | Discharge plasma treatment apparatus |
| JP2003188387A (en) | 2001-12-20 | 2003-07-04 | Sony Corp | Thin film transistor and its fabricating method |
| KR100450564B1 (en) | 2001-12-20 | 2004-09-30 | 동부전자 주식회사 | Post treatment method for metal line of semiconductor device |
| US6939801B2 (en) | 2001-12-21 | 2005-09-06 | Applied Materials, Inc. | Selective deposition of a barrier layer on a dielectric material |
| US6620670B2 (en) | 2002-01-18 | 2003-09-16 | Applied Materials, Inc. | Process conditions and precursors for atomic layer deposition (ALD) of AL2O3 |
| US6848458B1 (en) | 2002-02-05 | 2005-02-01 | Novellus Systems, Inc. | Apparatus and methods for processing semiconductor substrates using supercritical fluids |
| US6632325B2 (en) | 2002-02-07 | 2003-10-14 | Applied Materials, Inc. | Article for use in a semiconductor processing chamber and method of fabricating same |
| JP2003243374A (en) | 2002-02-20 | 2003-08-29 | Tokyo Electron Ltd | Substrate-treating apparatus and method therefor |
| US6835503B2 (en) | 2002-04-12 | 2004-12-28 | Micron Technology, Inc. | Use of a planarizing layer to improve multilayer performance in extreme ultra-violet masks |
| US7279432B2 (en) | 2002-04-16 | 2007-10-09 | Applied Materials, Inc. | System and method for forming an integrated barrier layer |
| US7589029B2 (en) | 2002-05-02 | 2009-09-15 | Micron Technology, Inc. | Atomic layer deposition and conversion |
| US7638727B2 (en) | 2002-05-08 | 2009-12-29 | Btu International Inc. | Plasma-assisted heat treatment |
| US7910165B2 (en) | 2002-06-04 | 2011-03-22 | Applied Materials, Inc. | Ruthenium layer formation for copper film deposition |
| US6657304B1 (en) | 2002-06-06 | 2003-12-02 | Advanced Micro Devices, Inc. | Conformal barrier liner in an integrated circuit interconnect |
| US6846380B2 (en) | 2002-06-13 | 2005-01-25 | The Boc Group, Inc. | Substrate processing apparatus and related systems and methods |
| US7521089B2 (en) | 2002-06-13 | 2009-04-21 | Tokyo Electron Limited | Method and apparatus for controlling the movement of CVD reaction byproduct gases to adjacent process chambers |
| US20070243317A1 (en) | 2002-07-15 | 2007-10-18 | Du Bois Dale R | Thermal Processing System and Configurable Vertical Chamber |
| US7335609B2 (en) | 2004-08-27 | 2008-02-26 | Applied Materials, Inc. | Gap-fill depositions introducing hydroxyl-containing precursors in the formation of silicon containing dielectric materials |
| US20070212850A1 (en) | 2002-09-19 | 2007-09-13 | Applied Materials, Inc. | Gap-fill depositions in the formation of silicon containing dielectric materials |
| EP1556902A4 (en) | 2002-09-30 | 2009-07-29 | Miasole | APPARATUS AND METHOD FOR MANUFACTURING CON CURRENT FOR LARGE SCALE PRODUCTION OF THIN FILM SOLAR CELLS |
| JP2004127958A (en) | 2002-09-30 | 2004-04-22 | Kyoshin Engineering:Kk | Apparatus and method for performing high pressure anneal steam treatment |
| US20040060519A1 (en) | 2002-10-01 | 2004-04-01 | Seh America Inc. | Quartz to quartz seal using expanded PTFE gasket material |
| US6889508B2 (en) | 2002-10-02 | 2005-05-10 | The Boc Group, Inc. | High pressure CO2 purification and supply system |
| US7270761B2 (en) | 2002-10-18 | 2007-09-18 | Appleid Materials, Inc | Fluorine free integrated process for etching aluminum including chamber dry clean |
| KR100480634B1 (en) | 2002-11-19 | 2005-03-31 | 삼성전자주식회사 | Method for fabricating a semiconductor device using nickel salicide process |
| CN1317741C (en) | 2002-11-25 | 2007-05-23 | 光洋热系统株式会社 | Electroheater for semiconductor treater |
| US20040112409A1 (en) | 2002-12-16 | 2004-06-17 | Supercritical Sysems, Inc. | Fluoride in supercritical fluid for photoresist and residue removal |
| US6825115B1 (en) | 2003-01-14 | 2004-11-30 | Advanced Micro Devices, Inc. | Post silicide laser thermal annealing to avoid dopant deactivation |
| EP1597752A2 (en) | 2003-02-04 | 2005-11-23 | Applied Materials, Inc. | Tailoring nitrogen profile in silicon oxynitride using rapid thermal annealing with ammonia under ultra-low pressure |
| JP3956049B2 (en) | 2003-03-07 | 2007-08-08 | 東京エレクトロン株式会社 | Method for forming tungsten film |
| US6809005B2 (en) | 2003-03-12 | 2004-10-26 | Infineon Technologies Ag | Method to fill deep trench structures with void-free polysilicon or silicon |
| US7079760B2 (en) | 2003-03-17 | 2006-07-18 | Tokyo Electron Limited | Processing system and method for thermally treating a substrate |
| KR100914087B1 (en) | 2003-05-13 | 2009-08-27 | 어플라이드 머티어리얼스, 인코포레이티드 | Methods and apparatus for sealing an opening of a processing chamber |
| US6867130B1 (en) | 2003-05-28 | 2005-03-15 | Advanced Micro Devices, Inc. | Enhanced silicidation of polysilicon gate electrodes |
| US6939794B2 (en) | 2003-06-17 | 2005-09-06 | Micron Technology, Inc. | Boron-doped amorphous carbon film for use as a hard etch mask during the formation of a semiconductor device |
| US7226512B2 (en) | 2003-06-18 | 2007-06-05 | Ekc Technology, Inc. | Load lock system for supercritical fluid cleaning |
| US20070012402A1 (en) | 2003-07-08 | 2007-01-18 | Sundew Technologies, Llc | Apparatus and method for downstream pressure control and sub-atmospheric reactive gas abatement |
| KR100539274B1 (en) | 2003-07-15 | 2005-12-27 | 삼성전자주식회사 | Method for depositing cobalt layer |
| JP4417669B2 (en) | 2003-07-28 | 2010-02-17 | 日本エー・エス・エム株式会社 | Semiconductor processing apparatus and semiconductor wafer introduction method |
| JP4173781B2 (en) | 2003-08-13 | 2008-10-29 | 株式会社神戸製鋼所 | High pressure processing method |
| JP4443879B2 (en) | 2003-09-03 | 2010-03-31 | 株式会社協真エンジニアリング | High precision high pressure annealing equipment |
| US7029966B2 (en) | 2003-09-18 | 2006-04-18 | International Business Machines Corporation | Process options of forming silicided metal gates for advanced CMOS devices |
| US6867152B1 (en) | 2003-09-26 | 2005-03-15 | Novellus Systems, Inc. | Properties of a silica thin film produced by a rapid vapor deposition (RVD) process |
| US7109087B2 (en) | 2003-10-03 | 2006-09-19 | Applied Materials, Inc. | Absorber layer for DSA processing |
| US20070111519A1 (en) | 2003-10-15 | 2007-05-17 | Applied Materials, Inc. | Integrated electroless deposition system |
| WO2005057663A2 (en) | 2003-12-10 | 2005-06-23 | Koninklijke Philips Electronics N.V. | Method and apparatus for fabrication of metal-oxide semiconductor integrated circuit devices |
| US20050161158A1 (en) | 2003-12-23 | 2005-07-28 | Schumacher John C. | Exhaust conditioning system for semiconductor reactor |
| US20050136684A1 (en) | 2003-12-23 | 2005-06-23 | Applied Materials, Inc. | Gap-fill techniques |
| US7158221B2 (en) | 2003-12-23 | 2007-01-02 | Applied Materials, Inc. | Method and apparatus for performing limited area spectral analysis |
| US20050250347A1 (en) | 2003-12-31 | 2005-11-10 | Bailey Christopher M | Method and apparatus for maintaining by-product volatility in deposition process |
| US20050205210A1 (en) | 2004-01-06 | 2005-09-22 | Devine Daniel J | Advanced multi-pressure workpiece processing |
| US7030468B2 (en) | 2004-01-16 | 2006-04-18 | International Business Machines Corporation | Low k and ultra low k SiCOH dielectric films and methods to form the same |
| US7037816B2 (en) | 2004-01-23 | 2006-05-02 | Taiwan Semiconductor Manufacturing Company, Ltd. | System and method for integration of HfO2 and RTCVD poly-silicon |
| US6897118B1 (en) | 2004-02-11 | 2005-05-24 | Chartered Semiconductor Manufacturing Ltd. | Method of multiple pulse laser annealing to activate ultra-shallow junctions |
| US20050187647A1 (en) | 2004-02-19 | 2005-08-25 | Kuo-Hua Wang | Intelligent full automation controlled flow for a semiconductor furnace tool |
| US7078302B2 (en) | 2004-02-23 | 2006-07-18 | Applied Materials, Inc. | Gate electrode dopant activation method for semiconductor manufacturing including a laser anneal |
| US7030016B2 (en) | 2004-03-30 | 2006-04-18 | Taiwan Semiconductor Manufacturing Co., Ltd. | Post ECP multi-step anneal/H2 treatment to reduce film impurity |
| JP4393268B2 (en) | 2004-05-20 | 2010-01-06 | 株式会社神戸製鋼所 | Drying method of fine structure |
| US20050269291A1 (en) | 2004-06-04 | 2005-12-08 | Tokyo Electron Limited | Method of operating a processing system for treating a substrate |
| US7268065B2 (en) | 2004-06-18 | 2007-09-11 | Taiwan Semiconductor Manufacturing Company, Ltd. | Methods of manufacturing metal-silicide features |
| US7521378B2 (en) | 2004-07-01 | 2009-04-21 | Micron Technology, Inc. | Low temperature process for polysilazane oxidation/densification |
| TWI267183B (en) | 2004-09-29 | 2006-11-21 | Sanyo Electric Co | Semiconductor device and manufacturing method of the same |
| US7439168B2 (en) | 2004-10-12 | 2008-10-21 | Dcg Systems, Inc | Apparatus and method of forming silicide in a localized manner |
| US7491658B2 (en) | 2004-10-13 | 2009-02-17 | International Business Machines Corporation | Ultra low k plasma enhanced chemical vapor deposition processes using a single bifunctional precursor containing both a SiCOH matrix functionality and organic porogen functionality |
| US7427571B2 (en) | 2004-10-15 | 2008-09-23 | Asm International, N.V. | Reactor design for reduced particulate generation |
| US8585873B2 (en) | 2004-10-16 | 2013-11-19 | Aviza Technology Limited | Methods and apparatus for sputtering |
| US20060091493A1 (en) | 2004-11-01 | 2006-05-04 | Silicon-Based Technology Corp. | LOCOS Schottky barrier contact structure and its manufacturing method |
| JP2006135161A (en) | 2004-11-08 | 2006-05-25 | Canon Inc | Method and apparatus for forming insulating film |
| US7235472B2 (en) | 2004-11-12 | 2007-06-26 | Infineon Technologies Ag | Method of making fully silicided gate electrode |
| JP2008521261A (en) | 2004-11-22 | 2008-06-19 | アプライド マテリアルズ インコーポレイテッド | Substrate processing apparatus using batch processing chamber |
| US7429402B2 (en) | 2004-12-10 | 2008-09-30 | Applied Materials, Inc. | Ruthenium as an underlayer for tungsten film deposition |
| US20060240187A1 (en) | 2005-01-27 | 2006-10-26 | Applied Materials, Inc. | Deposition of an intermediate catalytic layer on a barrier layer for copper metallization |
| KR100697280B1 (en) | 2005-02-07 | 2007-03-20 | 삼성전자주식회사 | Pressure regulating method of semiconductor manufacturing equipment |
| CN101128622B (en) | 2005-02-22 | 2010-08-25 | 埃克提斯公司 | Etching chamber with subchamber |
| US7211525B1 (en) | 2005-03-16 | 2007-05-01 | Novellus Systems, Inc. | Hydrogen treatment enhanced gap fill |
| US7759749B2 (en) | 2005-03-16 | 2010-07-20 | Nec Corporation | Metal material, and coating film and wiring for semiconductor integrated circuitry utilizing the metal material |
| WO2006101315A1 (en) | 2005-03-21 | 2006-09-28 | Pkl Co., Ltd. | Device and method for cleaning photomask |
| US20060226117A1 (en) | 2005-03-29 | 2006-10-12 | Bertram Ronald T | Phase change based heating element system and method |
| US7465650B2 (en) | 2005-04-14 | 2008-12-16 | Micron Technology, Inc. | Methods of forming polysilicon-comprising plugs and methods of forming FLASH memory circuitry |
| US20120060868A1 (en) | 2005-06-07 | 2012-03-15 | Donald Gray | Microscale fluid delivery system |
| JP5276436B2 (en) | 2005-06-10 | 2013-08-28 | オブデュキャット、アクチボラグ | Pattern duplication with intermediate stamp |
| JP4747693B2 (en) | 2005-06-28 | 2011-08-17 | 住友電気工業株式会社 | Method for forming resin body, method for forming structure for optical waveguide, and method for forming optical component |
| US7361231B2 (en) | 2005-07-01 | 2008-04-22 | Ekc Technology, Inc. | System and method for mid-pressure dense phase gas and ultrasonic cleaning |
| WO2007018016A1 (en) | 2005-08-05 | 2007-02-15 | Hitachi Kokusai Electric Inc. | Substrate processing equipment, cooling gas supply nozzle and method for fabricating semiconductor device |
| US7534080B2 (en) | 2005-08-26 | 2009-05-19 | Ascentool, Inc. | Vacuum processing and transfer system |
| US7531404B2 (en) | 2005-08-30 | 2009-05-12 | Intel Corporation | Semiconductor device having a metal gate electrode formed on an annealed high-k gate dielectric layer |
| KR100696178B1 (en) | 2005-09-13 | 2007-03-20 | 한국전자통신연구원 | Optical waveguide master and its manufacturing method |
| US8926731B2 (en) | 2005-09-13 | 2015-01-06 | Rasirc | Methods and devices for producing high purity steam |
| WO2007043383A1 (en) | 2005-10-07 | 2007-04-19 | Nikon Corporation | Fine structure body and method for manufacturing same |
| US7794667B2 (en) | 2005-10-19 | 2010-09-14 | Moore Epitaxial, Inc. | Gas ring and method of processing substrates |
| US8460519B2 (en) | 2005-10-28 | 2013-06-11 | Applied Materials Inc. | Protective offset sputtering |
| KR101101757B1 (en) | 2005-11-07 | 2012-01-05 | 주성엔지니어링(주) | Vacuum chamber reduces manufacturing costs |
| US7387968B2 (en) | 2005-11-08 | 2008-06-17 | Tokyo Electron Limited | Batch photoresist dry strip and ash system and process |
| US20070116873A1 (en) | 2005-11-18 | 2007-05-24 | Tokyo Electron Limited | Apparatus for thermal and plasma enhanced vapor deposition and method of operating |
| DK1948850T3 (en) | 2005-11-18 | 2019-07-29 | Luxembourg Inst Science & Tech List | PROCEDURE FOR MAKING A MULTIPLE LAYER STRUCTURE |
| US8306026B2 (en) | 2005-12-15 | 2012-11-06 | Toshiba America Research, Inc. | Last hop topology sensitive multicasting key management |
| US7432200B2 (en) | 2005-12-15 | 2008-10-07 | Intel Corporation | Filling narrow and high aspect ratio openings using electroless deposition |
| KR20070068596A (en) | 2005-12-27 | 2007-07-02 | 삼성전자주식회사 | Baking device |
| JP2007180310A (en) | 2005-12-28 | 2007-07-12 | Toshiba Corp | Semiconductor device |
| KR100684910B1 (en) | 2006-02-02 | 2007-02-22 | 삼성전자주식회사 | Plasma processing apparatus and its cleaning method |
| US20070187386A1 (en) | 2006-02-10 | 2007-08-16 | Poongsan Microtec Corporation | Methods and apparatuses for high pressure gas annealing |
| US7578258B2 (en) | 2006-03-03 | 2009-08-25 | Lam Research Corporation | Methods and apparatus for selective pre-coating of a plasma processing chamber |
| US7520969B2 (en) | 2006-03-07 | 2009-04-21 | Applied Materials, Inc. | Notched deposition ring |
| JP2007242791A (en) | 2006-03-07 | 2007-09-20 | Hitachi Kokusai Electric Inc | Substrate processing equipment |
| TW200746268A (en) | 2006-04-11 | 2007-12-16 | Applied Materials Inc | Process for forming cobalt-containing materials |
| JP4983087B2 (en) | 2006-04-27 | 2012-07-25 | 富士通セミコンダクター株式会社 | Film-forming method, semiconductor device manufacturing method, computer-readable recording medium, sputtering apparatus |
| WO2007133595A2 (en) | 2006-05-08 | 2007-11-22 | The Board Of Trustees Of The University Of Illinois | Integrated vacuum absorption steam cycle gas separation |
| US7825038B2 (en) | 2006-05-30 | 2010-11-02 | Applied Materials, Inc. | Chemical vapor deposition of high quality flow-like silicon dioxide using a silicon containing precursor and atomic oxygen |
| US7650965B2 (en) | 2006-06-09 | 2010-01-26 | Emcon Technologies Llc | Exhaust system |
| US7709320B2 (en) | 2006-06-28 | 2010-05-04 | International Business Machines Corporation | Method of fabricating trench capacitors and memory cells using trench capacitors |
| US7494891B2 (en) | 2006-09-21 | 2009-02-24 | International Business Machines Corporation | Trench capacitor with void-free conductor fill |
| JP2008073611A (en) | 2006-09-21 | 2008-04-03 | Dainippon Screen Mfg Co Ltd | High pressure treating device |
| JP4814038B2 (en) | 2006-09-25 | 2011-11-09 | 株式会社日立国際電気 | Substrate processing apparatus and method for attaching / detaching reaction vessel |
| JP4976796B2 (en) | 2006-09-25 | 2012-07-18 | 株式会社東芝 | Semiconductor device |
| US7521379B2 (en) | 2006-10-09 | 2009-04-21 | Applied Materials, Inc. | Deposition and densification process for titanium nitride barrier layers |
| JP2008118118A (en) | 2006-10-13 | 2008-05-22 | Asahi Glass Co Ltd | Method for smoothing substrate surface for EUV mask blank, and EUV mask blank obtained by the method |
| TW200830034A (en) | 2006-10-13 | 2008-07-16 | Asahi Glass Co Ltd | Method of smoothing surface of substrate for EUV mask blank, and EUV mask blank obtained by the method |
| US7888273B1 (en) | 2006-11-01 | 2011-02-15 | Novellus Systems, Inc. | Density gradient-free gap fill |
| US7790587B2 (en) | 2006-11-07 | 2010-09-07 | Intel Corporation | Method to reduce junction leakage through partial regrowth with ultrafast anneal and structures formed thereby |
| JP2008153635A (en) | 2006-11-22 | 2008-07-03 | Toshiba Matsushita Display Technology Co Ltd | Manufacturing method of mos type semiconductor device |
| JP5200371B2 (en) | 2006-12-01 | 2013-06-05 | 東京エレクトロン株式会社 | Film forming method, semiconductor device, and storage medium |
| US20080132050A1 (en) | 2006-12-05 | 2008-06-05 | Lavoie Adrien R | Deposition process for graded cobalt barrier layers |
| US20080169183A1 (en) | 2007-01-16 | 2008-07-17 | Varian Semiconductor Equipment Associates, Inc. | Plasma Source with Liner for Reducing Metal Contamination |
| JP2008192642A (en) | 2007-01-31 | 2008-08-21 | Tokyo Electron Ltd | Substrate processing apparatus |
| US20080233404A1 (en) | 2007-03-22 | 2008-09-25 | 3M Innovative Properties Company | Microreplication tools and patterns using laser induced thermal embossing |
| JP5135856B2 (en) | 2007-03-31 | 2013-02-06 | 東京エレクトロン株式会社 | Trap device, exhaust system and treatment system using the same |
| US20080241384A1 (en) | 2007-04-02 | 2008-10-02 | Asm Genitech Korea Ltd. | Lateral flow deposition apparatus and method of depositing film by using the apparatus |
| DE102007017641A1 (en) | 2007-04-13 | 2008-10-16 | Infineon Technologies Ag | Curing of layers on the semiconductor module by means of electromagnetic fields |
| WO2008131531A1 (en) | 2007-04-30 | 2008-11-06 | Ifire Ip Corporation | Laminated thick film dielectric structure for thick film dielectric electroluminescent displays |
| KR101560705B1 (en) | 2007-05-25 | 2015-10-16 | 어플라이드 머티어리얼스, 인코포레이티드 | Methods and apparatus for assembling and operating electronic device manufacturing systems |
| US20080311711A1 (en) | 2007-06-13 | 2008-12-18 | Roland Hampp | Gapfill for metal contacts |
| WO2008156687A1 (en) | 2007-06-15 | 2008-12-24 | Applied Materials, Inc. | Methods and systems for designing and validating operation of abatement systems |
| KR101442238B1 (en) | 2007-07-26 | 2014-09-23 | 주식회사 풍산마이크로텍 | Method for manufacturing semiconductor device by high pressure oxygen heat treatment |
| US7645709B2 (en) | 2007-07-30 | 2010-01-12 | Applied Materials, Inc. | Methods for low temperature oxidation of a semiconductor device |
| US7763522B2 (en) | 2007-08-01 | 2010-07-27 | United Microelectronic Corp. | Method of high density plasma gap-filling with minimization of gas phase nucleation |
| US8648253B1 (en) | 2010-10-01 | 2014-02-11 | Ascent Solar Technologies, Inc. | Machine and process for continuous, sequential, deposition of semiconductor solar absorbers having variable semiconductor composition deposited in multiple sublayers |
| US7951728B2 (en) | 2007-09-24 | 2011-05-31 | Applied Materials, Inc. | Method of improving oxide growth rate of selective oxidation processes |
| US7884012B2 (en) | 2007-09-28 | 2011-02-08 | Tokyo Electron Limited | Void-free copper filling of recessed features for semiconductor devices |
| US7867923B2 (en) | 2007-10-22 | 2011-01-11 | Applied Materials, Inc. | High quality silicon oxide films by remote plasma CVD from disilane precursors |
| US7803722B2 (en) | 2007-10-22 | 2010-09-28 | Applied Materials, Inc | Methods for forming a dielectric layer within trenches |
| US7541297B2 (en) | 2007-10-22 | 2009-06-02 | Applied Materials, Inc. | Method and system for improving dielectric film quality for void free gap fill |
| WO2009055750A1 (en) | 2007-10-26 | 2009-04-30 | Applied Materials, Inc. | Methods and apparatus for smart abatement using an improved fuel circuit |
| JP5299605B2 (en) | 2007-11-19 | 2013-09-25 | 日揮触媒化成株式会社 | Method for repairing damage of low dielectric constant silica-based coating and low dielectric constant silica-based coating repaired by the method |
| US7651959B2 (en) | 2007-12-03 | 2010-01-26 | Asm Japan K.K. | Method for forming silazane-based dielectric film |
| KR20090064279A (en) | 2007-12-14 | 2009-06-18 | 노벨러스 시스템즈, 인코포레이티드 | Protective layer for damage-free gap filling |
| US7776740B2 (en) | 2008-01-22 | 2010-08-17 | Tokyo Electron Limited | Method for integrating selective low-temperature ruthenium deposition into copper metallization of a semiconductor device |
| US7843063B2 (en) | 2008-02-14 | 2010-11-30 | International Business Machines Corporation | Microstructure modification in copper interconnect structure |
| US7964506B1 (en) | 2008-03-06 | 2011-06-21 | Novellus Systems, Inc. | Two step copper electroplating process with anneal for uniform across wafer deposition and void free filling on ruthenium coated wafers |
| US20090246952A1 (en) | 2008-03-28 | 2009-10-01 | Tokyo Electron Limited | Method of forming a cobalt metal nitride barrier film |
| JP4815464B2 (en) | 2008-03-31 | 2011-11-16 | 株式会社日立製作所 | Fine structure transfer stamper and fine structure transfer apparatus |
| US20090269507A1 (en) | 2008-04-29 | 2009-10-29 | Sang-Ho Yu | Selective cobalt deposition on copper surfaces |
| TWI476836B (en) | 2008-05-02 | 2015-03-11 | Applied Materials Inc | System for non radial temperature control for rotating substrates |
| KR101496148B1 (en) | 2008-05-15 | 2015-02-27 | 삼성전자주식회사 | Semiconductor device and manufacturing method thereof |
| US8133793B2 (en) | 2008-05-16 | 2012-03-13 | Sandisk 3D Llc | Carbon nano-film reversible resistance-switchable elements and methods of forming the same |
| US7622369B1 (en) | 2008-05-30 | 2009-11-24 | Asm Japan K.K. | Device isolation technology on semiconductor substrate |
| US8736587B2 (en)* | 2008-07-10 | 2014-05-27 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| US7655532B1 (en) | 2008-07-25 | 2010-02-02 | Taiwan Semiconductor Manufacturing Company, Ltd. | STI film property using SOD post-treatment |
| JP2010056541A (en)* | 2008-07-31 | 2010-03-11 | Semiconductor Energy Lab Co Ltd | Semiconductor device and manufacturing method thereof |
| JP2010080949A (en) | 2008-08-29 | 2010-04-08 | Kisco Ltd | Copper film annealing method, annealed copper film, and device having copper wiring |
| US20100089315A1 (en) | 2008-09-22 | 2010-04-15 | Applied Materials, Inc. | Shutter disk for physical vapor deposition chamber |
| US8153533B2 (en) | 2008-09-24 | 2012-04-10 | Lam Research | Methods and systems for preventing feature collapse during microelectronic topography fabrication |
| KR20100035000A (en) | 2008-09-25 | 2010-04-02 | 삼성전자주식회사 | Semiconductor device having isolation layer with isolation trench of different aspect ratio and isolation trench gap fill method of fabricating the same |
| US20100102417A1 (en) | 2008-10-27 | 2010-04-29 | Applied Materials, Inc. | Vapor deposition method for ternary compounds |
| US7891228B2 (en) | 2008-11-18 | 2011-02-22 | Mks Instruments, Inc. | Dual-mode mass flow verification and mass flow delivery system and method |
| US8557712B1 (en) | 2008-12-15 | 2013-10-15 | Novellus Systems, Inc. | PECVD flowable dielectric gap fill |
| KR20100082170A (en) | 2009-01-08 | 2010-07-16 | 삼성전자주식회사 | Methods of forming a silicon oxide layer pattern and an isolation layer |
| JP2010168607A (en) | 2009-01-21 | 2010-08-05 | Institute Of National Colleges Of Technology Japan | Facing target type sputtering apparatus capable of controlling composition ratio |
| TWI558843B (en) | 2009-02-04 | 2016-11-21 | 應用材料股份有限公司 | Ground return for plasma processes |
| KR101534678B1 (en) | 2009-02-12 | 2015-07-08 | 삼성전자주식회사 | A method of manufacturing a semiconductor device in which a tungsten contact plug is subjected to an RTA treatment in an oxygen atmosphere and a tungsten plug subjected to an RTO treatment is reduced in a hydrogen atmosphere |
| US20100248419A1 (en) | 2009-02-15 | 2010-09-30 | Jacob Woodruff | Solar cell absorber layer formed from equilibrium precursor(s) |
| US8841661B2 (en)* | 2009-02-25 | 2014-09-23 | Semiconductor Energy Laboratory Co., Ltd. | Staggered oxide semiconductor TFT semiconductor device and manufacturing method thereof |
| JP2010205854A (en) | 2009-03-02 | 2010-09-16 | Fujitsu Semiconductor Ltd | Method of manufacturing semiconductor device |
| JP4523661B1 (en) | 2009-03-10 | 2010-08-11 | 三井造船株式会社 | Atomic layer deposition apparatus and thin film forming method |
| JP4564570B2 (en) | 2009-03-10 | 2010-10-20 | 三井造船株式会社 | Atomic layer deposition equipment |
| US8435830B2 (en) | 2009-03-18 | 2013-05-07 | Samsung Electronics Co., Ltd. | Methods of fabricating semiconductor devices |
| FR2944147B1 (en) | 2009-04-02 | 2011-09-23 | Saint Gobain | METHOD FOR MANUFACTURING TEXTURED EXTERNAL SURFACE STRUCTURE FOR ORGANIC ELECTROLUMINESCENT DIODE DEVICE AND STRUTURE WITH TEXTURED EXTERNAL SURFACE |
| KR20120004502A (en) | 2009-04-03 | 2012-01-12 | 어플라이드 머티어리얼스, 인코포레이티드 | High pressure RF-DC sputtering and method for improving step applicability and film uniformity of this process |
| US20100297854A1 (en) | 2009-04-22 | 2010-11-25 | Applied Materials, Inc. | High throughput selective oxidation of silicon and polysilicon using plasma at room temperature |
| US20100304027A1 (en) | 2009-05-27 | 2010-12-02 | Applied Materials, Inc. | Substrate processing system and methods thereof |
| JP4415062B1 (en)* | 2009-06-22 | 2010-02-17 | 富士フイルム株式会社 | THIN FILM TRANSISTOR AND METHOD FOR PRODUCING THIN FILM TRANSISTOR |
| KR20110000960A (en) | 2009-06-29 | 2011-01-06 | 삼성전자주식회사 | Semiconductor chip, stack module, memory card and manufacturing method thereof |
| CN102473748B (en) | 2009-07-01 | 2014-08-20 | 三菱电机株式会社 | Thin film solar cell and manufacturing method thereof |
| JP2012197463A (en) | 2009-07-03 | 2012-10-18 | Canon Anelva Corp | Film deposition method |
| US20110011737A1 (en) | 2009-07-17 | 2011-01-20 | Institute Of Nuclear Energy Research Atomic Energy Council, Executive Yuan | High-power pulse magnetron sputtering apparatus and surface treatment apparatus using the same |
| JP5568913B2 (en) | 2009-07-24 | 2014-08-13 | 株式会社ユーテック | PZT film manufacturing method and steam heating apparatus |
| US9548228B2 (en) | 2009-08-04 | 2017-01-17 | Lam Research Corporation | Void free tungsten fill in different sized features |
| US8741788B2 (en) | 2009-08-06 | 2014-06-03 | Applied Materials, Inc. | Formation of silicon oxide using non-carbon flowable CVD processes |
| KR20110023007A (en) | 2009-08-28 | 2011-03-08 | 삼성전자주식회사 | Thin film solar cell and manufacturing method thereof |
| JP2011066100A (en) | 2009-09-16 | 2011-03-31 | Bridgestone Corp | Photocurable transfer sheet and method for forming recessed and projected pattern using same |
| US8278224B1 (en) | 2009-09-24 | 2012-10-02 | Novellus Systems, Inc. | Flowable oxide deposition using rapid delivery of process gases |
| US8449942B2 (en) | 2009-11-12 | 2013-05-28 | Applied Materials, Inc. | Methods of curing non-carbon flowable CVD films |
| JP2011108739A (en)* | 2009-11-13 | 2011-06-02 | Dainippon Printing Co Ltd | Thin film transistor substrate, method of manufacturing the same, and image display device |
| KR101370301B1 (en) | 2009-11-20 | 2014-03-05 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | Method for manufacturing semiconductor device |
| US20110151677A1 (en) | 2009-12-21 | 2011-06-23 | Applied Materials, Inc. | Wet oxidation process performed on a dielectric material formed from a flowable cvd process |
| SG182336A1 (en) | 2010-01-06 | 2012-08-30 | Applied Materials Inc | Flowable dielectric using oxide liner |
| US8691687B2 (en) | 2010-01-07 | 2014-04-08 | International Business Machines Corporation | Superfilled metal contact vias for semiconductor devices |
| KR101837648B1 (en) | 2010-01-07 | 2018-04-19 | 어플라이드 머티어리얼스, 인코포레이티드 | Insitu ozone cure for radicalcomponent cvd |
| KR101775608B1 (en) | 2010-01-21 | 2017-09-19 | 파워다인, 인코포레이티드 | Generating steam from carbonaceous material |
| US20110174363A1 (en) | 2010-01-21 | 2011-07-21 | Aqt Solar, Inc. | Control of Composition Profiles in Annealed CIGS Absorbers |
| US8293658B2 (en) | 2010-02-17 | 2012-10-23 | Asm America, Inc. | Reactive site deactivation against vapor deposition |
| US20110204518A1 (en) | 2010-02-23 | 2011-08-25 | Globalfoundries Inc. | Scalability with reduced contact resistance |
| JP2013521650A (en) | 2010-03-05 | 2013-06-10 | アプライド マテリアルズ インコーポレイテッド | Conformal layer by radical component CVD |
| TW201133974A (en) | 2010-03-23 | 2011-10-01 | Nat Univ Tsing Hua | Method for improving the efficiency of a flexible organic solar cell |
| US9129945B2 (en) | 2010-03-24 | 2015-09-08 | Applied Materials, Inc. | Formation of liner and barrier for tungsten as gate electrode and as contact plug to reduce resistance and enhance device performance |
| JP2011210778A (en)* | 2010-03-29 | 2011-10-20 | Dainippon Printing Co Ltd | Thin film transistor substrate |
| JP5505032B2 (en)* | 2010-03-30 | 2014-05-28 | 大日本印刷株式会社 | Active matrix drive substrate, manufacturing method thereof, and display device |
| US8795488B2 (en) | 2010-03-31 | 2014-08-05 | Applied Materials, Inc. | Apparatus for physical vapor deposition having centrally fed RF energy |
| KR20130045418A (en)* | 2010-04-23 | 2013-05-03 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | Manufacturing method of semiconductor device |
| JP5697534B2 (en) | 2010-05-14 | 2015-04-08 | 株式会社半導体エネルギー研究所 | Method for manufacturing transistor |
| KR101163711B1 (en) | 2010-06-15 | 2012-07-09 | 서울대학교산학협력단 | 1t dram device having two gates on recessed body and method of operating and fabricating the same |
| CN101871043B (en) | 2010-06-25 | 2012-07-18 | 东莞市康汇聚线材科技有限公司 | Annealing furnace steam generator and control method thereof |
| US8318584B2 (en) | 2010-07-30 | 2012-11-27 | Applied Materials, Inc. | Oxide-rich liner layer for flowable CVD gapfill |
| JP2012049446A (en) | 2010-08-30 | 2012-03-08 | Toshiba Corp | Supercritical drying method and supercritical drying system |
| EP2426720A1 (en)* | 2010-09-03 | 2012-03-07 | Applied Materials, Inc. | Staggered thin film transistor and method of forming the same |
| KR101427502B1 (en)* | 2010-09-13 | 2014-08-07 | 파나소닉 주식회사 | Method for manufacturing a metal oxide semiconductor |
| TW201216331A (en) | 2010-10-05 | 2012-04-16 | Applied Materials Inc | Ultra high selectivity doped amorphous carbon strippable hardmask development and integration |
| JP2012089744A (en) | 2010-10-21 | 2012-05-10 | Elpida Memory Inc | Semiconductor device manufacturing method |
| US20120153483A1 (en) | 2010-12-20 | 2012-06-21 | Akolkar Rohan N | Barrierless single-phase interconnect |
| KR101226958B1 (en)* | 2011-01-18 | 2013-01-28 | 연세대학교 산학협력단 | Method for forming oxide thin film, an electrical device using the low-temperature pressure annealing, and a thin film transistor |
| KR20120100241A (en)* | 2011-03-03 | 2012-09-12 | 인하대학교 산학협력단 | Thin film transistor and manufacturing method thereof, and plat panel display apparatus |
| JP5806827B2 (en) | 2011-03-18 | 2015-11-10 | 東京エレクトロン株式会社 | Gate valve apparatus, substrate processing apparatus and substrate processing method thereof |
| KR20140027917A (en) | 2011-03-25 | 2014-03-07 | 이서영 | Lightwave circuit and method for manufacturing same |
| JP5450494B2 (en) | 2011-03-25 | 2014-03-26 | 株式会社東芝 | Supercritical drying method for semiconductor substrates |
| US20120252210A1 (en) | 2011-03-30 | 2012-10-04 | Tokyo Electron Limited | Method for modifying metal cap layers in semiconductor devices |
| WO2012133583A1 (en) | 2011-03-30 | 2012-10-04 | 大日本印刷株式会社 | Supercritical drying device and supercritical drying method |
| US8524600B2 (en) | 2011-03-31 | 2013-09-03 | Applied Materials, Inc. | Post deposition treatments for CVD cobalt films |
| US8637410B2 (en) | 2011-04-08 | 2014-01-28 | Applied Materials, Inc. | Method for metal deposition using hydrogen plasma |
| US9299581B2 (en) | 2011-05-12 | 2016-03-29 | Applied Materials, Inc. | Methods of dry stripping boron-carbon films |
| WO2012165377A1 (en) | 2011-05-30 | 2012-12-06 | 東京エレクトロン株式会社 | Method for treating substrate, device for treating substrate and storage medium |
| JP6085423B2 (en) | 2011-05-30 | 2017-02-22 | 株式会社東芝 | Substrate processing method, substrate processing apparatus, and storage medium |
| US8435887B2 (en) | 2011-06-02 | 2013-05-07 | International Business Machines Corporation | Copper interconnect formation |
| US8466073B2 (en) | 2011-06-03 | 2013-06-18 | Applied Materials, Inc. | Capping layer for reduced outgassing |
| GB201110117D0 (en) | 2011-06-16 | 2011-07-27 | Fujifilm Mfg Europe Bv | method and device for manufacturing a barrie layer on a flexible substrate |
| KR101228649B1 (en)* | 2011-06-20 | 2013-01-31 | 성균관대학교산학협력단 | Manufacturing method of multi-component metal oxides thin film having superlattice structure in thermoelectric module |
| EP2727137B1 (en) | 2011-06-28 | 2022-04-20 | Brooks Automation (Germany) GmbH | Semiconductor stocker systems and methods. |
| JP5544666B2 (en) | 2011-06-30 | 2014-07-09 | セメス株式会社 | Substrate processing equipment |
| KR101459502B1 (en)* | 2011-07-13 | 2014-11-07 | 어플라이드 머티어리얼스, 인코포레이티드 | Methods of manufacturing thin film transistor devices |
| WO2013008982A1 (en) | 2011-07-14 | 2013-01-17 | 엘티씨 (주) | Inorganic scattering film having high light extraction performance |
| US9368603B2 (en) | 2011-09-15 | 2016-06-14 | Taiwan Semiconductor Manufacturing Company, Ltd. | Contact for high-k metal gate device |
| US8546227B2 (en) | 2011-09-15 | 2013-10-01 | Taiwan Semiconductor Manufacturing Company, Ltd. | Contact for high-K metal gate device |
| US10023954B2 (en) | 2011-09-15 | 2018-07-17 | Applied Materials, Inc. | Slit valve apparatus, systems, and methods |
| CN103035513B (en) | 2011-09-30 | 2016-10-05 | 中芯国际集成电路制造(上海)有限公司 | The forming method of amorphous carbon film |
| KR101568748B1 (en) | 2011-11-01 | 2015-11-12 | 가부시키가이샤 히다치 고쿠사이 덴키 | Production method for semiconductor device, production device for semiconductor device, and storage medium |
| JP5712902B2 (en) | 2011-11-10 | 2015-05-07 | 東京エレクトロン株式会社 | Substrate processing apparatus, substrate processing method, and storage medium |
| KR101305904B1 (en) | 2011-12-07 | 2013-09-09 | 주식회사 테스 | Method of manufacturing a semiconductor device with minute pattern |
| WO2013083129A1 (en) | 2011-12-08 | 2013-06-13 | Inmold Biosystems A/S | Spin-on-glass assisted polishing of rough substrates |
| JP2013122493A (en) | 2011-12-09 | 2013-06-20 | Furukawa Electric Co Ltd:The | Optical branching element and optical branching circuit |
| JP2013206919A (en)* | 2012-03-27 | 2013-10-07 | Sony Corp | Thin film transistor, manufacturing method of the same and display device |
| US9653614B2 (en) | 2012-01-23 | 2017-05-16 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
| JP2013154315A (en) | 2012-01-31 | 2013-08-15 | Ricoh Co Ltd | Thin film forming apparatus, thin film forming method, electro-mechanical transducer element, liquid ejecting head, and inkjet recording apparatus |
| CN104106128B (en) | 2012-02-13 | 2016-11-09 | 应用材料公司 | Method and apparatus for selective oxidation of substrates |
| US9082618B2 (en)* | 2012-03-02 | 2015-07-14 | Japan Science And Technology Agency | Method of forming a conductive film |
| US8871656B2 (en) | 2012-03-05 | 2014-10-28 | Applied Materials, Inc. | Flowable films using alternative silicon precursors |
| WO2013134661A1 (en)* | 2012-03-09 | 2013-09-12 | Air Products And Chemicals, Inc. | Barrier materials for display devices |
| JP6092902B2 (en)* | 2012-03-09 | 2017-03-08 | エア プロダクツ アンド ケミカルズ インコーポレイテッドＡｉｒ Ｐｒｏｄｕｃｔｓ Ａｎｄ Ｃｈｅｍｉｃａｌｓ Ｉｎｃｏｒｐｏｒａｔｅｄ | Method for producing a silicon-containing film on a thin film transistor device |
| JP5577365B2 (en) | 2012-03-15 | 2014-08-20 | コマツ産機株式会社 | Device for checking braking performance of press machine |
| US9330939B2 (en) | 2012-03-28 | 2016-05-03 | Applied Materials, Inc. | Method of enabling seamless cobalt gap-fill |
| US9303311B2 (en) | 2012-03-30 | 2016-04-05 | Applied Materials, Inc. | Substrate processing system with mechanically floating target assembly |
| US9647066B2 (en) | 2012-04-24 | 2017-05-09 | Taiwan Semiconductor Manufacturing Company, Ltd. | Dummy FinFET structure and method of making same |
| US20130288485A1 (en) | 2012-04-30 | 2013-10-31 | Applied Materials, Inc. | Densification for flowable films |
| US20130337171A1 (en) | 2012-06-13 | 2013-12-19 | Qualcomm Mems Technologies, Inc. | N2 purged o-ring for chamber in chamber ald system |
| KR101224520B1 (en) | 2012-06-27 | 2013-01-22 | (주)이노시티 | Apparatus for process chamber |
| KR20140003776A (en) | 2012-06-28 | 2014-01-10 | 주식회사 메카로닉스 | Preparation of a high resistivity zno thin film |
| WO2014011954A1 (en) | 2012-07-13 | 2014-01-16 | Northwestern University | Multifunctional graphene coated scanning tips |
| JP2014019912A (en) | 2012-07-19 | 2014-02-03 | Tokyo Electron Ltd | Method of depositing tungsten film |
| CN102790012A (en)* | 2012-07-20 | 2012-11-21 | 京东方科技集团股份有限公司 | Array substrate and manufacturing method thereof as well as display equipment |
| KR101750633B1 (en) | 2012-07-30 | 2017-06-23 | 가부시키가이샤 히다치 고쿠사이 덴키 | Substrate processing apparatus, method for manufacturing semiconductor device, and recording medium |
| US20140034632A1 (en) | 2012-08-01 | 2014-02-06 | Heng Pan | Apparatus and method for selective oxidation at lower temperature using remote plasma source |
| US8846448B2 (en) | 2012-08-10 | 2014-09-30 | Taiwan Semiconductor Manufacturing Co., Ltd. | Warpage control in a package-on-package structure |
| KR101680152B1 (en) | 2012-08-24 | 2016-11-28 | 고쿠리츠켄큐카이하츠호진 카가쿠기쥬츠신코키코 | Semiconductor structure provided with aluminum-nitride-oxide film on top of germanium layer, and manufacturing method therefor |
| KR102002782B1 (en) | 2012-09-10 | 2019-07-23 | 삼성전자주식회사 | Method of manufacturing for Semiconductor device using expandable material |
| JP2014060256A (en) | 2012-09-18 | 2014-04-03 | Tokyo Electron Ltd | Processing system |
| JP6325229B2 (en) | 2012-10-17 | 2018-05-16 | 株式会社半導体エネルギー研究所 | Manufacturing method of oxide film |
| US9157730B2 (en) | 2012-10-26 | 2015-10-13 | Applied Materials, Inc. | PECVD process |
| US9337318B2 (en) | 2012-10-26 | 2016-05-10 | Taiwan Semiconductor Manufacturing Company, Ltd. | FinFET with dummy gate on non-recessed shallow trench isolation (STI) |
| SG2013083241A (en) | 2012-11-08 | 2014-06-27 | Novellus Systems Inc | Conformal film deposition for gapfill |
| JP6060460B2 (en) | 2012-11-22 | 2017-01-18 | アーゼット・エレクトロニック・マテリアルズ（ルクセンブルグ）ソシエテ・ア・レスポンサビリテ・リミテ | Method for forming siliceous film and siliceous film formed by the same method |
| TWI689004B (en) | 2012-11-26 | 2020-03-21 | 美商應用材料股份有限公司 | Stiction-free drying process with contaminant removal for high-aspect-ratio semiconductor device structures |
| US20150322286A1 (en) | 2012-11-27 | 2015-11-12 | The Regents Of The University Of California | Polymerized Metal-Organic Material for Printable Photonic Devices |
| US9123577B2 (en) | 2012-12-12 | 2015-09-01 | Sandisk Technologies Inc. | Air gap isolation in non-volatile memory using sacrificial films |
| JP2014141739A (en) | 2012-12-27 | 2014-08-07 | Tokyo Electron Ltd | Film deposition method of manganese metal film, processing system, production method of electronic device and electronic device |
| US9559181B2 (en) | 2013-11-26 | 2017-01-31 | Taiwan Semiconductor Manufacturing Company, Ltd. | Structure and method for FinFET device with buried sige oxide |
| WO2014115600A1 (en) | 2013-01-22 | 2014-07-31 | ピーエスフォー ルクスコ エスエイアールエル | Method for manufacturing semiconductor device |
| US9018108B2 (en) | 2013-01-25 | 2015-04-28 | Applied Materials, Inc. | Low shrinkage dielectric films |
| US20140216498A1 (en) | 2013-02-06 | 2014-08-07 | Kwangduk Douglas Lee | Methods of dry stripping boron-carbon films |
| US9231111B2 (en)* | 2013-02-13 | 2016-01-05 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| MY171887A (en) | 2013-02-19 | 2019-11-06 | Applied Materials Inc | Hdd patterning using flowable cvd film |
| KR101443792B1 (en) | 2013-02-20 | 2014-09-26 | 국제엘렉트릭코리아 주식회사 | Gas Phase Etcher Apparatus |
| KR20140104112A (en) | 2013-02-20 | 2014-08-28 | 주식회사 에스에프에이 | Chemical vapor deposition apparatus for flat display |
| KR20140106977A (en)* | 2013-02-27 | 2014-09-04 | 삼성전자주식회사 | Metal oxide semiconductor Thin Film Transistors having high performance and methods of manufacturing the same |
| US9354508B2 (en) | 2013-03-12 | 2016-05-31 | Applied Materials, Inc. | Planarized extreme ultraviolet lithography blank, and manufacturing and lithography systems therefor |
| US9680095B2 (en) | 2013-03-13 | 2017-06-13 | Macronix International Co., Ltd. | Resistive RAM and fabrication method |
| US9196768B2 (en) | 2013-03-15 | 2015-11-24 | Jehad A. Abushama | Method and apparatus for depositing copper—indium—gallium selenide (CuInGaSe2-CIGS) thin films and other materials on a substrate |
| WO2014143662A1 (en) | 2013-03-15 | 2014-09-18 | Applied Materials, Inc | Substrate deposition systems, robot transfer apparatus, and methods for electronic device manufacturing |
| US20140271097A1 (en) | 2013-03-15 | 2014-09-18 | Applied Materials, Inc. | Processing systems and methods for halide scavenging |
| TWI624897B (en) | 2013-03-15 | 2018-05-21 | 應用材料股份有限公司 | Multi-position batch load lock apparatus and systems and methods including same |
| US10224258B2 (en) | 2013-03-22 | 2019-03-05 | Applied Materials, Inc. | Method of curing thermoplastics with microwave energy |
| US9190321B2 (en) | 2013-04-08 | 2015-11-17 | International Business Machines Corporation | Self-forming embedded diffusion barriers |
| US9538586B2 (en) | 2013-04-26 | 2017-01-03 | Applied Materials, Inc. | Method and apparatus for microwave treatment of dielectric films |
| US9087903B2 (en) | 2013-04-26 | 2015-07-21 | Taiwan Semiconductor Manufacturing Company, Ltd. | Buffer layer omega gate |
| KR101287035B1 (en) | 2013-05-07 | 2013-07-17 | 호용종합건설주식회사 | Boiler system for pipe regeneration |
| JP6068633B2 (en) | 2013-05-31 | 2017-01-25 | 株式会社日立国際電気 | Substrate processing apparatus, semiconductor device manufacturing method, and furnace mouth cover |
| JP6196481B2 (en) | 2013-06-24 | 2017-09-13 | 株式会社荏原製作所 | Exhaust gas treatment equipment |
| KR101542803B1 (en) | 2013-07-09 | 2015-08-07 | 주식회사 네오세미텍 | Vacuum chamber with purge apparatus of high temperature and high pressure injection type and cleaning method using it |
| KR20150010065A (en)* | 2013-07-18 | 2015-01-28 | 삼성디스플레이 주식회사 | Method of forming an oxide semiconductor device, and method of manufacturing a display device having an oxide semiconductor device |
| EP2832899A1 (en) | 2013-08-02 | 2015-02-04 | The Swatch Group Research and Development Ltd. | Diamond coating and method for depositing such a coating |
| US9178103B2 (en) | 2013-08-09 | 2015-11-03 | Tsmc Solar Ltd. | Apparatus and method for forming chalcogenide semiconductor absorber materials with sodium impurities |
| CN105453230B (en) | 2013-08-16 | 2019-06-14 | 应用材料公司 | Tungsten Deposition with Tungsten Hexafluoride (WF6) Etch Back |
| WO2015026445A1 (en) | 2013-08-21 | 2015-02-26 | Applied Materials, Inc. | Variable frequency microwave (vfm) processes and applications in semiconductor thin film fabrications |
| JP6226648B2 (en) | 2013-09-04 | 2017-11-08 | 昭和電工株式会社 | Method for manufacturing SiC epitaxial wafer |
| US9224734B2 (en) | 2013-09-13 | 2015-12-29 | Taiwan Semiconductor Manufacturing Company, Ltd. | CMOS devices with reduced leakage and methods of forming the same |
| KR20150031889A (en) | 2013-09-17 | 2015-03-25 | 엘지이노텍 주식회사 | Solar cell |
| TWI660429B (en) | 2013-09-27 | 2019-05-21 | 美商應用材料股份有限公司 | Method of enabling seamless cobalt gap-fill |
| JP6165577B2 (en) | 2013-09-30 | 2017-07-19 | Hoya株式会社 | Mask blank manufacturing method and transfer mask manufacturing method |
| US9396986B2 (en) | 2013-10-04 | 2016-07-19 | Taiwan Semiconductor Manufacturing Company, Ltd. | Mechanism of forming a trench structure |
| US9583655B2 (en) | 2013-10-08 | 2017-02-28 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method of making photovoltaic device having high quantum efficiency |
| JP6129712B2 (en) | 2013-10-24 | 2017-05-17 | 信越化学工業株式会社 | Superheated steam treatment equipment |
| JP6254823B2 (en) | 2013-11-01 | 2017-12-27 | Ｊｘ金属株式会社 | Nickel silicide sputtering target and manufacturing method thereof |
| KR102210672B1 (en)* | 2013-11-15 | 2021-02-04 | 삼성디스플레이 주식회사 | Method of forming an oxide semiconductor device and method of manufacturing a display device including an oxide semiconductor device |
| KR20150062545A (en) | 2013-11-29 | 2015-06-08 | 삼성전기주식회사 | Bake Apparatus |
| JP6221710B2 (en) | 2013-12-10 | 2017-11-01 | 住友電気工業株式会社 | Manufacturing method of semiconductor device |
| CN112759278A (en) | 2013-12-22 | 2021-05-07 | 应用材料公司 | Glass-ceramic for ultraviolet lithography and method for manufacturing same |
| US9406547B2 (en) | 2013-12-24 | 2016-08-02 | Intel Corporation | Techniques for trench isolation using flowable dielectric materials |
| CN103745978B (en)* | 2014-01-03 | 2016-08-17 | 京东方科技集团股份有限公司 | Display device, array base palte and preparation method thereof |
| US9677172B2 (en) | 2014-01-21 | 2017-06-13 | Applied Materials, Inc. | Methods for forming a cobalt-ruthenium liner layer for interconnect structures |
| US9257527B2 (en) | 2014-02-14 | 2016-02-09 | International Business Machines Corporation | Nanowire transistor structures with merged source/drain regions using auxiliary pillars |
| US9818603B2 (en) | 2014-03-06 | 2017-11-14 | Taiwan Semiconductor Manufacturing Company, Ltd. | Semiconductor devices and methods of manufacture thereof |
| US9496145B2 (en) | 2014-03-19 | 2016-11-15 | Applied Materials, Inc. | Electrochemical plating methods |
| WO2015143371A1 (en) | 2014-03-21 | 2015-09-24 | Brookhaven Science Associates, Llc | Hole blocking, electron transporting and window layer for optimized cuin(1-x)ga(x)se2 solar cells |
| US11183375B2 (en) | 2014-03-31 | 2021-11-23 | Applied Materials, Inc. | Deposition system with multi-cathode and method of manufacture thereof |
| KR101571715B1 (en) | 2014-04-23 | 2015-11-25 | 주식회사 풍산 | Method of forming spin on glass type insulation layer using high pressure annealing |
| US10157952B2 (en)* | 2014-05-23 | 2018-12-18 | Panasonic Intellectual Property Management Co., Ltd. | Imaging device including semiconductor substrate and unit pixel cell |
| US9984915B2 (en) | 2014-05-30 | 2018-05-29 | Infineon Technologies Ag | Semiconductor wafer and method for processing a semiconductor wafer |
| KR101561924B1 (en)* | 2014-06-12 | 2015-10-22 | 연세대학교 산학협력단 | Method for post-treating oxide thin film, and method for fabricating semiconductor device using the same |
| CN104047676A (en) | 2014-06-14 | 2014-09-17 | 马根昌 | Improved opposite impact silencer |
| KR20220031134A (en) | 2014-06-16 | 2022-03-11 | 인텔 코포레이션 | Seam healing of metal interconnects |
| CN104089491B (en) | 2014-07-03 | 2015-11-04 | 肇庆宏旺金属实业有限公司 | The waste heat recycling system of annealing furnace |
| US9257314B1 (en) | 2014-07-31 | 2016-02-09 | Poongsan Corporation | Methods and apparatuses for deuterium recovery |
| US9695503B2 (en) | 2014-08-22 | 2017-07-04 | Applied Materials, Inc. | High power impulse magnetron sputtering process to achieve a high density high SP3 containing layer |
| JPWO2016038664A1 (en) | 2014-09-08 | 2017-04-27 | 三菱電機株式会社 | Semiconductor annealing equipment |
| US9773865B2 (en) | 2014-09-22 | 2017-09-26 | International Business Machines Corporation | Self-forming spacers using oxidation |
| US9484461B2 (en) | 2014-09-29 | 2016-11-01 | Taiwan Semiconductor Manufacturing Company, Ltd. | Integrated circuit structure with substrate isolation and un-doped channel |
| US9362107B2 (en) | 2014-09-30 | 2016-06-07 | Applied Materials, Inc. | Flowable low-k dielectric gapfill treatment |
| US20160111342A1 (en)* | 2014-10-17 | 2016-04-21 | Lam Research Corporation | Method and apparatus for characterizing metal oxide reduction |
| US9711414B2 (en) | 2014-10-21 | 2017-07-18 | Samsung Electronics Co., Ltd. | Strained stacked nanosheet FETS and/or quantum well stacked nanosheet |
| US20160118391A1 (en) | 2014-10-22 | 2016-04-28 | SanDisk Technologies, Inc. | Deuterium anneal of semiconductor channels in a three-dimensional memory structure |
| KR102079501B1 (en) | 2014-10-24 | 2020-02-20 | 버슘머트리얼즈 유에스, 엘엘씨 | Compositions and methods using same for deposition of silicon-containing film |
| US10204764B2 (en) | 2014-10-28 | 2019-02-12 | Applied Materials, Inc. | Methods for forming a metal silicide interconnection nanowire structure |
| US9768060B2 (en) | 2014-10-29 | 2017-09-19 | Applied Materials, Inc. | Systems and methods for electrochemical deposition on a workpiece including removing contamination from seed layer surface prior to ECD |
| US10236197B2 (en)* | 2014-11-06 | 2019-03-19 | Applied Materials, Inc. | Processing system containing an isolation region separating a deposition chamber from a treatment chamber |
| US9543141B2 (en) | 2014-12-09 | 2017-01-10 | Taiwan Semiconductor Manufacturing Co., Ltd | Method for curing flowable layer |
| US9780214B2 (en) | 2014-12-22 | 2017-10-03 | Taiwan Semiconductor Manufacturing Co., Ltd. | Semiconductor device including Fin- FET and manufacturing method thereof |
| US9777378B2 (en) | 2015-01-07 | 2017-10-03 | Applied Materials, Inc. | Advanced process flow for high quality FCVD films |
| US9613859B2 (en) | 2015-01-09 | 2017-04-04 | Applied Materials, Inc. | Direct deposition of nickel silicide nanowire |
| TW201639063A (en) | 2015-01-22 | 2016-11-01 | 應用材料股份有限公司 | Batch heating and cooling chamber or loadlock |
| JP6585724B2 (en) | 2015-02-06 | 2019-10-02 | バーサム マテリアルズ ユーエス，リミティド ライアビリティ カンパニー | Composition for carbon-doped silicon-containing film and method of using the same |
| US9859039B2 (en) | 2015-02-13 | 2018-01-02 | Alexander Otto | Multifilament superconducting wire with high resistance sleeves |
| US20160268127A1 (en) | 2015-03-13 | 2016-09-15 | Semiconductor Energy Laboratory Co., Ltd. | Oxide and Manufacturing Method Thereof |
| US9711535B2 (en) | 2015-03-13 | 2017-07-18 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method of forming FinFET channel |
| US9590102B2 (en) | 2015-04-15 | 2017-03-07 | Taiwan Semiconductor Manufacturing Co., Ltd. | Semiconductor device and manufacturing method thereof |
| JP6826044B2 (en) | 2015-04-20 | 2021-02-03 | アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ | Buffer chamber wafer heating mechanism and support robot |
| US20160314964A1 (en) | 2015-04-21 | 2016-10-27 | Lam Research Corporation | Gap fill using carbon-based films |
| TWI677046B (en)* | 2015-04-23 | 2019-11-11 | 美商應用材料股份有限公司 | External substrate rotation in a semiconductor processing system |
| US10443934B2 (en) | 2015-05-08 | 2019-10-15 | Varian Semiconductor Equipment Associates, Inc. | Substrate handling and heating system |
| US9685303B2 (en) | 2015-05-08 | 2017-06-20 | Varian Semiconductor Equipment Associates, Inc. | Apparatus for heating and processing a substrate |
| TWI723993B (en) | 2015-05-11 | 2021-04-11 | 美商應用材料股份有限公司 | Horizontal gate all around and finfet device isolation |
| KR101681190B1 (en) | 2015-05-15 | 2016-12-02 | 세메스 주식회사 | method and Apparatus for Processing Substrate |
| CN106159038B (en) | 2015-05-15 | 2020-02-11 | 北京铂阳顶荣光伏科技有限公司 | Hexagonal phase epitaxial cadmium sulfide on copper indium gallium selenide for photovoltaic junction |
| WO2016191621A1 (en) | 2015-05-27 | 2016-12-01 | Applied Materials, Inc. | Methods and apparatus for a microwave batch curing process |
| US10597779B2 (en) | 2015-06-05 | 2020-03-24 | Applied Materials, Inc. | Susceptor position and rational apparatus and methods of use |
| TWI621161B (en) | 2015-06-05 | 2018-04-11 | 東京威力科創股份有限公司 | Ruthenium metal feature fill for interconnects |
| US9633839B2 (en) | 2015-06-19 | 2017-04-25 | Applied Materials, Inc. | Methods for depositing dielectric films via physical vapor deposition processes |
| US20160379854A1 (en) | 2015-06-29 | 2016-12-29 | Varian Semiconductor Equipment Associates, Inc. | Vacuum Compatible LED Substrate Heater |
| US9728430B2 (en) | 2015-06-29 | 2017-08-08 | Varian Semiconductor Equipment Associates, Inc. | Electrostatic chuck with LED heating |
| US10170608B2 (en) | 2015-06-30 | 2019-01-01 | International Business Machines Corporation | Internal spacer formation from selective oxidation for fin-first wire-last replacement gate-all-around nanowire FET |
| US9646850B2 (en) | 2015-07-06 | 2017-05-09 | Globalfoundries Inc. | High-pressure anneal |
| US9972504B2 (en) | 2015-08-07 | 2018-05-15 | Lam Research Corporation | Atomic layer etching of tungsten for enhanced tungsten deposition fill |
| US10468238B2 (en) | 2015-08-21 | 2019-11-05 | Applied Materials, Inc. | Methods and apparatus for co-sputtering multiple targets |
| US9666606B2 (en) | 2015-08-21 | 2017-05-30 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and electronic device |
| US9484406B1 (en) | 2015-09-03 | 2016-11-01 | Applied Materials, Inc. | Method for fabricating nanowires for horizontal gate all around devices for semiconductor applications |
| US9530737B1 (en) | 2015-09-28 | 2016-12-27 | Taiwan Semiconductor Manufacturing Co., Ltd. | Semiconductor device and manufacturing method thereof |
| US9716142B2 (en) | 2015-10-12 | 2017-07-25 | International Business Machines Corporation | Stacked nanowires |
| FR3042400A1 (en) | 2015-10-15 | 2017-04-21 | Essilor Int | DEVICE FOR TESTING THE VISUAL BEHAVIOR OF AN INDIVIDUAL AND METHOD FOR DETERMINING AT LEAST ONE OPTICAL DESIGN PARAMETER OF AN OPHTHALMIC LENS USING SUCH A DEVICE |
| US9755047B2 (en) | 2015-10-27 | 2017-09-05 | United Microelectronics Corp. | Semiconductor process and semiconductor device |
| US9484255B1 (en) | 2015-11-03 | 2016-11-01 | International Business Machines Corporation | Hybrid source and drain contact formation using metal liner and metal insulator semiconductor contacts |
| US9754840B2 (en) | 2015-11-16 | 2017-09-05 | Taiwan Semiconductor Manufacturing Company, Ltd. | Horizontal gate-all-around device having wrapped-around source and drain |
| US9502307B1 (en) | 2015-11-20 | 2016-11-22 | International Business Machines Corporation | Forming a semiconductor structure for reduced negative bias temperature instability |
| US9633838B2 (en) | 2015-12-28 | 2017-04-25 | L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude | Vapor deposition of silicon-containing films using penta-substituted disilanes |
| KR20170080796A (en)* | 2015-12-30 | 2017-07-11 | 삼성디스플레이 주식회사 | Method of forming oxide semiconductor device |
| KR102577628B1 (en) | 2016-01-05 | 2023-09-13 | 어플라이드 머티어리얼스, 인코포레이티드 | Method for fabricating nanowires for horizontal gate all-around devices for semiconductor applications |
| US9805976B2 (en) | 2016-01-08 | 2017-10-31 | Applied Materials, Inc. | Co or Ni and Cu integration for small and large features in integrated circuits |
| US9570551B1 (en) | 2016-02-05 | 2017-02-14 | International Business Machines Corporation | Replacement III-V or germanium nanowires by unilateral confined epitaxial growth |
| US9679810B1 (en) | 2016-02-11 | 2017-06-13 | Globalfoundries Inc. | Integrated circuit having improved electromigration performance and method of forming same |
| JP6240695B2 (en) | 2016-03-02 | 2017-11-29 | 株式会社日立国際電気 | Substrate processing apparatus, semiconductor device manufacturing method, and program |
| KR102358289B1 (en) | 2016-03-11 | 2022-02-03 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | Composites and Transistors |
| US11326253B2 (en) | 2016-04-27 | 2022-05-10 | Applied Materials, Inc. | Atomic layer deposition of protective coatings for semiconductor process chamber components |
| US10049927B2 (en) | 2016-06-10 | 2018-08-14 | Applied Materials, Inc. | Seam-healing method upon supra-atmospheric process in diffusion promoting ambient |
| TWI729457B (en) | 2016-06-14 | 2021-06-01 | 美商應用材料股份有限公司 | Oxidative volumetric expansion of metals and metal containing compounds |
| US9933314B2 (en) | 2016-06-30 | 2018-04-03 | Varian Semiconductor Equipment Associates, Inc. | Semiconductor workpiece temperature measurement system |
| US9876019B1 (en) | 2016-07-13 | 2018-01-23 | Globalfoundries Singapore Pte. Ltd. | Integrated circuits with programmable memory and methods for producing the same |
| JP6593268B2 (en)* | 2016-07-25 | 2019-10-23 | 住友電気工業株式会社 | Oxide sintered body and method for manufacturing the same, sputter target, and method for manufacturing semiconductor device |
| US10020186B2 (en) | 2016-07-29 | 2018-07-10 | Applied Materials, Inc. | Silicon germanium selective oxidation process |
| US10115670B2 (en) | 2016-08-17 | 2018-10-30 | International Business Machines Corporation | Formation of advanced interconnects including set of metal conductor structures in patterned dielectric layer |
| US10858727B2 (en) | 2016-08-19 | 2020-12-08 | Applied Materials, Inc. | High density, low stress amorphous carbon film, and process and equipment for its deposition |
| US20180087418A1 (en) | 2016-09-22 | 2018-03-29 | Castrol Limited | Fluid Method and System |
| US10083834B2 (en) | 2016-09-30 | 2018-09-25 | Applied Materials, Inc. | Methods of forming self-aligned vias |
| US10249525B2 (en) | 2016-10-03 | 2019-04-02 | Applied Materials, Inc. | Dynamic leveling process heater lift |
| US9741626B1 (en) | 2016-10-20 | 2017-08-22 | International Business Machines Corporation | Vertical transistor with uniform bottom spacer formed by selective oxidation |
| KR102582671B1 (en) | 2016-12-22 | 2023-09-25 | 삼성전자주식회사 | Semiconductor devices |
| TWI758398B (en) | 2017-01-24 | 2022-03-21 | 美商應用材料股份有限公司 | Method of forming cobalt layer on substrate |
| US10570506B2 (en) | 2017-01-24 | 2020-02-25 | Applied Materials, Inc. | Method to improve film quality for PVD carbon with reactive gas and bias power |
| US10224224B2 (en) | 2017-03-10 | 2019-03-05 | Micromaterials, LLC | High pressure wafer processing systems and related methods |
| KR102606653B1 (en) | 2017-03-31 | 2023-11-24 | 어플라이드 머티어리얼스, 인코포레이티드 | Two-step process for gapfilling high aspect ratio trenches with amorphous silicon films |
| WO2018187546A1 (en) | 2017-04-07 | 2018-10-11 | Applied Materials, Inc. | Gapfill using reactive anneal |
| JP6913761B2 (en) | 2017-04-21 | 2021-08-04 | アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ | Improved electrode assembly |
| CN116504679A (en) | 2017-05-01 | 2023-07-28 | 应用材料公司 | High pressure annealing chamber with vacuum isolation and pretreatment environment |
| JP7175283B2 (en) | 2017-05-03 | 2022-11-18 | アプライド マテリアルズ インコーポレイテッド | Integrated substrate temperature measurement on high temperature ceramic heaters |
| CN110709974B (en) | 2017-05-19 | 2023-08-01 | 应用材料公司 | Equipment for the collection and subsequent reaction of liquid and solid effluents into gaseous effluents |
| US10847360B2 (en) | 2017-05-25 | 2020-11-24 | Applied Materials, Inc. | High pressure treatment of silicon nitride film |
| US10622214B2 (en) | 2017-05-25 | 2020-04-14 | Applied Materials, Inc. | Tungsten defluorination by high pressure treatment |
| CN110678973B (en) | 2017-06-02 | 2023-09-19 | 应用材料公司 | Dry stripping of boron carbide hard masks |
| US20180350563A1 (en) | 2017-06-02 | 2018-12-06 | Applied Materials, Inc. | Quality improvement of films deposited on a substrate |
| US10388533B2 (en) | 2017-06-16 | 2019-08-20 | Applied Materials, Inc. | Process integration method to tune resistivity of nickel silicide |
| US10269571B2 (en) | 2017-07-12 | 2019-04-23 | Applied Materials, Inc. | Methods for fabricating nanowire for semiconductor applications |
| US10234630B2 (en) | 2017-07-12 | 2019-03-19 | Applied Materials, Inc. | Method for creating a high refractive index wave guide |
| US10179941B1 (en) | 2017-07-14 | 2019-01-15 | Applied Materials, Inc. | Gas delivery system for high pressure processing chamber |
| US10276411B2 (en) | 2017-08-18 | 2019-04-30 | Applied Materials, Inc. | High pressure and high temperature anneal chamber |
| WO2019036157A1 (en) | 2017-08-18 | 2019-02-21 | Applied Materials, Inc. | High pressure and high temperature anneal chamber |
| US10096516B1 (en) | 2017-08-18 | 2018-10-09 | Applied Materials, Inc. | Method of forming a barrier layer for through via applications |
| US10643867B2 (en) | 2017-11-03 | 2020-05-05 | Applied Materials, Inc. | Annealing system and method |
| CN117936420A (en) | 2017-11-11 | 2024-04-26 | 微材料有限责任公司 | Gas delivery system for high pressure processing chamber |
| JP7330181B2 (en) | 2017-11-16 | 2023-08-21 | アプライド マテリアルズ インコーポレイテッド | High-pressure steam annealing treatment equipment |
| KR20200075892A (en) | 2017-11-17 | 2020-06-26 | 어플라이드 머티어리얼스, 인코포레이티드 | Condenser system for high pressure treatment systems |
| KR102649241B1 (en) | 2018-01-24 | 2024-03-18 | 어플라이드 머티어리얼스, 인코포레이티드 | Seam healing using high pressure annealing |
| EP3756217A4 (en) | 2018-02-22 | 2021-11-10 | Applied Materials, Inc. | METHOD OF PROCESSING A MASK BEARING TO ENABLE A BETTER FILM QUALITY |
| US11114333B2 (en) | 2018-02-22 | 2021-09-07 | Micromaterials, LLC | Method for depositing and reflow of a high quality etch resistant gapfill dielectric film |
| SG11202008256WA (en) | 2018-03-09 | 2020-09-29 | Applied Materials Inc | High pressure annealing process for metal containing materials |
| US10714331B2 (en) | 2018-04-04 | 2020-07-14 | Applied Materials, Inc. | Method to fabricate thermally stable low K-FinFET spacer |
| US10916433B2 (en) | 2018-04-06 | 2021-02-09 | Applied Materials, Inc. | Methods of forming metal silicide layers and metal silicide layers formed therefrom |
| WO2019204124A1 (en) | 2018-04-20 | 2019-10-24 | Applied Materials, Inc. | Ceramic wafer heater with integrated pressurized helium cooling |
| US10950429B2 (en) | 2018-05-08 | 2021-03-16 | Applied Materials, Inc. | Methods of forming amorphous carbon hard mask layers and hard mask layers formed therefrom |
| US10566188B2 (en) | 2018-05-17 | 2020-02-18 | Applied Materials, Inc. | Method to improve film stability |
| US11434569B2 (en) | 2018-05-25 | 2022-09-06 | Applied Materials, Inc. | Ground path systems for providing a shorter and symmetrical ground path |
| US11499666B2 (en) | 2018-05-25 | 2022-11-15 | Applied Materials, Inc. | Precision dynamic leveling mechanism with long motion capability |
| US10704141B2 (en) | 2018-06-01 | 2020-07-07 | Applied Materials, Inc. | In-situ CVD and ALD coating of chamber to control metal contamination |
| US10790183B2 (en) | 2018-06-05 | 2020-09-29 | Applied Materials, Inc. | Selective oxidation for 3D device isolation |
| US20200035513A1 (en) | 2018-07-25 | 2020-01-30 | Applied Materials, Inc. | Processing apparatus |
| US10748783B2 (en) | 2018-07-25 | 2020-08-18 | Applied Materials, Inc. | Gas delivery module |
| US10675581B2 (en) | 2018-08-06 | 2020-06-09 | Applied Materials, Inc. | Gas abatement apparatus |
| CN112640065B (en) | 2018-10-30 | 2024-10-01 | 应用材料公司 | Method for etching structures for semiconductor applications |
| US11101174B2 (en) | 2019-10-15 | 2021-08-24 | Applied Materials, Inc. | Gap fill deposition process |
| US11728449B2 (en) | 2019-12-03 | 2023-08-15 | Applied Materials, Inc. | Copper, indium, gallium, selenium (CIGS) films with improved quantum efficiency |