INTERNATIONAL APPLICATION PUBLISHED UNDER THE PATENT COOPERATION TREATY (PCT) (19) World Intellectual Property Organization International Bureau 1:51d ) (43) International Publication Date iCt: i,„,„.. 22 June 2017(22.06.2017) WIPO I PCT (10) WO International 1111111111113111111111111111111111111111111111111111111111111111111111111111111111111111 2017/105351 Publication Number Al (51) International Patent Classification: pore 138634 (SG). SINGH, Pushpapraj; do Industry De- A61B 18/00 (2006.01) A61M 25/00 (2006.01) velopment, Institute of Microelectronics, 2 Fusionopolis A61B 18/18 (2006.01) A61M 25/04 (2006.01) Way, #08-02, Innovis Tower, Singapore 138634 (SG). TAN, Kwan Ling; do Industry Development, Institute of (21) International Application Number: Microelectronics, 2 Fusionopolis Way, #08-02, Innovis PCT/SG2016/050606 Tower, Singapore 138634 (SG). CHEN, Weiguo; c/o In- (22) International Filing Date: dustry Development, Institute of Microelectronics, 2 Fu- 15 December 2016 (15.12.2016) sionopolis Way, #08-02, Innovis Tower, Singapore 138634 (SG). LIM, Ruiqi; c/o Industry Development, Institute of (25) Filing Language: English Microelectronics, 2 Fusionopolis Way, #08-02, Innovis (26) Publication Language: English Tower, Singapore 138634 (SG). DAMALERIO, Ramona; c/o Industry Development, Institute of Microelectronics, 2 (30) Priority Data: Fusionopolis Way, #08-02, Innovis Tower, Singapore 10201510264Y 15 December 2015 (15.12.2015) SG 138634 (SG). CHUNGPAIBOONPATANA, Surasit; c/o (71) Applicant: AGENCY FOR SCIENCE, TECHNOLOGY Industry Development, Institute of Microelectronics, 2 Fu- sionopolis Way, #08-02, Innovis Tower, Singapore 138634 AND RESEARCH [SG/SG]; 1 Fusionopolis Way, #20-10 Connexis, Singapore 138632 (SG). (SG). (72) Inventors: CHENG, Ming-Yuan; c/o Industry Develop- (74) Agent: SPRUSON & FERGUSON (ASIA) PTE LTD; ment, Institute of Microelectronics, 2 Fusionopolis Way, P.O. Box 1531, Robinson Road Post Office, Singapore #08-02, Innovis Tower, Singapore 138634 (SG) ZHANG, 903031 (SG). Songsong; c/o Industry Development, Institute of Micro- Designated States indicated, (81) (unless otherwise for every electronics, 2 Fusionopolis Way, #08-02, Innovis Tower, kind of national available): AE, AG, AL, AM, protection Singapore 138634 GU, Alex Yuandong; In- (SG). c/o AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, dustry Development, Institute Microelectronics, 2 Fu- of BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, sionopolis Way, #08-02, Innovis Tower, Singapore 138634 DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, (SG). RANDLES, Andrew Benson; c/o Industry Develop- HN, HR, HU, ID, IL, IN, IR, IS, JP, KE, KG, ICH, KN, ment, Institute of Microelectronics, 2 Fusionopolis Way, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, #08-02, Innovis Tower, Singapore 138634 (SG). TAN, Ee MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, Lim; Industry Development, Institute Microelectron- NI, NO, NZ, PA, PE, PG, PH, PL, PT, RO, RS, c/o of OM, QA, ics, 2 Fusionopolis Way, #08-02, Innovis Tower, Singa- RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, [Continued on next page] Title: METHOD AND DEPLOYABLE MULTIAPPARATUS FOR RENAL DENERVATION (54) -SPINE CATHETER-BASED 664 664 mown's. I 0069/99.194 , ‘d cg, d; * i sla fl# i / Se / 0 5d \" \" , We 1$1 & Metal gauge / t / P/ - - ro \ , ...__ 760 2 ,, 4 4 ,, / 666 666 264 \"f//, in -a Aii 710 'eac fie 754 _., ,, ,,, ,,,, , , av \"e a , . :1 a 11 .4t 752 11 750 In en FIG. 7B in 0 Il ----- (57) : A device for vascular denervation comprising a catheter for insertion into a vessel, at least one elongated catheter arm IN having alternating regions of flexible joints and rigid blocks along the at least one catheter aim, wherein each of the at least one cath - c::: : , eter arm comprises at least one tactile sensor and at least one temperature sensor; at least one electrode and electrical circuitry dis - N posed on each of the at least one catheter arm and at least one linkage connected to all of the elongated catheter aims. A method for ega ) batch fabricating a plurality of catheter arms for the vascular denervation device is also provided and comprises the steps of deposit - ing a first polymer coating on a semiconductor substrate, foiining metal traces on the first polymer coating, patterning and etching the substrate to the first polymer coating to create flexible joint regions. WO 2017/105351 Al MIDEDIMOMOIDEIR0101301011HIIMOMMIEDEN TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, SI, SK, SM, TR), OAPI (BF, BJ, CF, CG, CI, CM, GA, VN, ZA, ZM, ZW. GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG). (84) Designated States (unless otherwise indicated, for every Declarations under Rule 4.17: kind of regional protection available): ARIPO (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, of inventorship (Rule 4.17(iv)) TZ, UG, ZM, ZW), Eurasian (AM, AZ, BY, KG, KZ, RU, Published: TJ, TM), European (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, with international search report 21(3)) (Art.