| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US13/275,168US8536561B2 (en) | 2011-10-17 | 2011-10-17 | Memory cells and memory cell arrays |
| PCT/US2012/055928WO2013058917A1 (en) | 2011-10-17 | 2012-09-18 | Memory cells and memory cell arrays |
| Publication Number | Publication Date |
|---|---|
| SG11201400942YAtrue SG11201400942YA (en) | 2014-09-26 |
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SG11201400942YASG11201400942YA (en) | 2011-10-17 | 2012-09-18 | Memory cells and memory cell arrays |
| Country | Link |
|---|---|
| US (4) | US8536561B2 (en) |
| EP (1) | EP2769414B1 (en) |
| JP (1) | JP6007255B2 (en) |
| KR (1) | KR101501419B1 (en) |
| CN (1) | CN103858231B (en) |
| SG (1) | SG11201400942YA (en) |
| TW (1) | TWI470742B (en) |
| WO (1) | WO2013058917A1 (en) |
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