Movatterモバイル変換


[0]ホーム

URL:


SG10202111772XA - Atomic layer deposition chamber with funnel-shaped gas dispersion channel and gas distribution plate - Google Patents

Atomic layer deposition chamber with funnel-shaped gas dispersion channel and gas distribution plate

Info

Publication number
SG10202111772XA
SG10202111772XASG10202111772XASG10202111772XASG10202111772XASG 10202111772X ASG10202111772X ASG 10202111772XASG 10202111772X ASG10202111772X ASG 10202111772XASG 10202111772X ASG10202111772X ASG 10202111772XASG 10202111772X ASG10202111772X ASG 10202111772XA
Authority
SG
Singapore
Prior art keywords
funnel
atomic layer
layer deposition
distribution plate
deposition chamber
Prior art date
Application number
SG10202111772XA
Inventor
Muhammad Rasheed
Srinivas Gandikota
Mario Dan SANCHEZ
Guoqiang Jian
Yixiong Yang
Deepak Jadhav
Ashutosh Agarwal
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials IncfiledCriticalApplied Materials Inc
Publication of SG10202111772XApublicationCriticalpatent/SG10202111772XA/en

Links

Classifications

Landscapes

SG10202111772XA2015-04-222016-04-19Atomic layer deposition chamber with funnel-shaped gas dispersion channel and gas distribution plateSG10202111772XA (en)

Applications Claiming Priority (2)

Application NumberPriority DateFiling DateTitle
US201562151180P2015-04-222015-04-22
US14/734,838US11384432B2 (en)2015-04-222015-06-09Atomic layer deposition chamber with funnel-shaped gas dispersion channel and gas distribution plate

Publications (1)

Publication NumberPublication Date
SG10202111772XAtrue SG10202111772XA (en)2021-12-30

Family

ID=57144181

Family Applications (2)

Application NumberTitlePriority DateFiling Date
SG10202111772XASG10202111772XA (en)2015-04-222016-04-19Atomic layer deposition chamber with funnel-shaped gas dispersion channel and gas distribution plate
SG11201707640WASG11201707640WA (en)2015-04-222016-04-19Atomic layer deposition chamber with funnel-shaped gas dispersion channel and gas distribution plate

Family Applications After (1)

Application NumberTitlePriority DateFiling Date
SG11201707640WASG11201707640WA (en)2015-04-222016-04-19Atomic layer deposition chamber with funnel-shaped gas dispersion channel and gas distribution plate

Country Status (8)

CountryLink
US (2)US11384432B2 (en)
EP (1)EP3286352B1 (en)
KR (2)KR102631744B1 (en)
CN (2)CN112877675B (en)
IL (2)IL284142B2 (en)
SG (2)SG10202111772XA (en)
TW (2)TWI722871B (en)
WO (1)WO2016172085A1 (en)

Families Citing this family (385)

* Cited by examiner, † Cited by third party
Publication numberPriority datePublication dateAssigneeTitle
US10378106B2 (en)2008-11-142019-08-13Asm Ip Holding B.V.Method of forming insulation film by modified PEALD
US9394608B2 (en)2009-04-062016-07-19Asm America, Inc.Semiconductor processing reactor and components thereof
US8802201B2 (en)2009-08-142014-08-12Asm America, Inc.Systems and methods for thin-film deposition of metal oxides using excited nitrogen-oxygen species
US9312155B2 (en)2011-06-062016-04-12Asm Japan K.K.High-throughput semiconductor-processing apparatus equipped with multiple dual-chamber modules
US10364496B2 (en)2011-06-272019-07-30Asm Ip Holding B.V.Dual section module having shared and unshared mass flow controllers
US10854498B2 (en)2011-07-152020-12-01Asm Ip Holding B.V.Wafer-supporting device and method for producing same
US20130023129A1 (en)2011-07-202013-01-24Asm America, Inc.Pressure transmitter for a semiconductor processing environment
US9017481B1 (en)2011-10-282015-04-28Asm America, Inc.Process feed management for semiconductor substrate processing
US9659799B2 (en)2012-08-282017-05-23Asm Ip Holding B.V.Systems and methods for dynamic semiconductor process scheduling
US10714315B2 (en)2012-10-122020-07-14Asm Ip Holdings B.V.Semiconductor reaction chamber showerhead
US20160376700A1 (en)2013-02-012016-12-29Asm Ip Holding B.V.System for treatment of deposition reactor
US9484191B2 (en)2013-03-082016-11-01Asm Ip Holding B.V.Pulsed remote plasma method and system
US9589770B2 (en)2013-03-082017-03-07Asm Ip Holding B.V.Method and systems for in-situ formation of intermediate reactive species
US9240412B2 (en)2013-09-272016-01-19Asm Ip Holding B.V.Semiconductor structure and device and methods of forming same using selective epitaxial process
US10683571B2 (en)2014-02-252020-06-16Asm Ip Holding B.V.Gas supply manifold and method of supplying gases to chamber using same
US10167557B2 (en)2014-03-182019-01-01Asm Ip Holding B.V.Gas distribution system, reactor including the system, and methods of using the same
US11015245B2 (en)2014-03-192021-05-25Asm Ip Holding B.V.Gas-phase reactor and system having exhaust plenum and components thereof
US10858737B2 (en)2014-07-282020-12-08Asm Ip Holding B.V.Showerhead assembly and components thereof
US9890456B2 (en)2014-08-212018-02-13Asm Ip Holding B.V.Method and system for in situ formation of gas-phase compounds
US9793096B2 (en)*2014-09-122017-10-17Lam Research CorporationSystems and methods for suppressing parasitic plasma and reducing within-wafer non-uniformity
US10407771B2 (en)*2014-10-062019-09-10Applied Materials, Inc.Atomic layer deposition chamber with thermal lid
US9657845B2 (en)2014-10-072017-05-23Asm Ip Holding B.V.Variable conductance gas distribution apparatus and method
US10941490B2 (en)2014-10-072021-03-09Asm Ip Holding B.V.Multiple temperature range susceptor, assembly, reactor and system including the susceptor, and methods of using the same
KR102263121B1 (en)2014-12-222021-06-09에이에스엠 아이피 홀딩 비.브이.Semiconductor device and manufacuring method thereof
US10529542B2 (en)2015-03-112020-01-07Asm Ip Holdings B.V.Cross-flow reactor and method
US10276355B2 (en)2015-03-122019-04-30Asm Ip Holding B.V.Multi-zone reactor, system including the reactor, and method of using the same
US11384432B2 (en)*2015-04-222022-07-12Applied Materials, Inc.Atomic layer deposition chamber with funnel-shaped gas dispersion channel and gas distribution plate
KR101792941B1 (en)*2015-04-302017-11-02어드밴스드 마이크로 패브리케이션 이큅먼트 인코퍼레이티드, 상하이A Chemical Vapor Deposition Apparatus and Its Cleaning Method
US10458018B2 (en)2015-06-262019-10-29Asm Ip Holding B.V.Structures including metal carbide material, devices including the structures, and methods of forming same
US10600673B2 (en)2015-07-072020-03-24Asm Ip Holding B.V.Magnetic susceptor to baseplate seal
US9960072B2 (en)2015-09-292018-05-01Asm Ip Holding B.V.Variable adjustment for precise matching of multiple chamber cavity housings
US10211308B2 (en)2015-10-212019-02-19Asm Ip Holding B.V.NbMC layers
US10322384B2 (en)2015-11-092019-06-18Asm Ip Holding B.V.Counter flow mixer for process chamber
US11139308B2 (en)2015-12-292021-10-05Asm Ip Holding B.V.Atomic layer deposition of III-V compounds to form V-NAND devices
US10468251B2 (en)2016-02-192019-11-05Asm Ip Holding B.V.Method for forming spacers using silicon nitride film for spacer-defined multiple patterning
US10529554B2 (en)2016-02-192020-01-07Asm Ip Holding B.V.Method for forming silicon nitride film selectively on sidewalls or flat surfaces of trenches
US10501866B2 (en)2016-03-092019-12-10Asm Ip Holding B.V.Gas distribution apparatus for improved film uniformity in an epitaxial system
US10343920B2 (en)2016-03-182019-07-09Asm Ip Holding B.V.Aligned carbon nanotubes
US9892913B2 (en)2016-03-242018-02-13Asm Ip Holding B.V.Radial and thickness control via biased multi-port injection settings
US10190213B2 (en)2016-04-212019-01-29Asm Ip Holding B.V.Deposition of metal borides
US10865475B2 (en)2016-04-212020-12-15Asm Ip Holding B.V.Deposition of metal borides and silicides
US10367080B2 (en)2016-05-022019-07-30Asm Ip Holding B.V.Method of forming a germanium oxynitride film
US10032628B2 (en)2016-05-022018-07-24Asm Ip Holding B.V.Source/drain performance through conformal solid state doping
KR102592471B1 (en)2016-05-172023-10-20에이에스엠 아이피 홀딩 비.브이.Method of forming metal interconnection and method of fabricating semiconductor device using the same
US11453943B2 (en)2016-05-252022-09-27Asm Ip Holding B.V.Method for forming carbon-containing silicon/metal oxide or nitride film by ALD using silicon precursor and hydrocarbon precursor
KR102102320B1 (en)*2016-06-282020-04-22주식회사 원익아이피에스Wafer Processing Apparatus And Method of depositing Thin film Using The Same
US10388509B2 (en)2016-06-282019-08-20Asm Ip Holding B.V.Formation of epitaxial layers via dislocation filtering
US9859151B1 (en)2016-07-082018-01-02Asm Ip Holding B.V.Selective film deposition method to form air gaps
US10612137B2 (en)2016-07-082020-04-07Asm Ip Holdings B.V.Organic reactants for atomic layer deposition
US10714385B2 (en)2016-07-192020-07-14Asm Ip Holding B.V.Selective deposition of tungsten
KR102354490B1 (en)2016-07-272022-01-21에이에스엠 아이피 홀딩 비.브이.Method of processing a substrate
US10395919B2 (en)2016-07-282019-08-27Asm Ip Holding B.V.Method and apparatus for filling a gap
US9812320B1 (en)2016-07-282017-11-07Asm Ip Holding B.V.Method and apparatus for filling a gap
US9887082B1 (en)2016-07-282018-02-06Asm Ip Holding B.V.Method and apparatus for filling a gap
KR102532607B1 (en)2016-07-282023-05-15에이에스엠 아이피 홀딩 비.브이.Substrate processing apparatus and method of operating the same
KR102613349B1 (en)2016-08-252023-12-14에이에스엠 아이피 홀딩 비.브이.Exhaust apparatus and substrate processing apparatus and thin film fabricating method using the same
US10410943B2 (en)2016-10-132019-09-10Asm Ip Holding B.V.Method for passivating a surface of a semiconductor and related systems
US10643826B2 (en)2016-10-262020-05-05Asm Ip Holdings B.V.Methods for thermally calibrating reaction chambers
US11532757B2 (en)2016-10-272022-12-20Asm Ip Holding B.V.Deposition of charge trapping layers
US10643904B2 (en)2016-11-012020-05-05Asm Ip Holdings B.V.Methods for forming a semiconductor device and related semiconductor device structures
US10229833B2 (en)2016-11-012019-03-12Asm Ip Holding B.V.Methods for forming a transition metal nitride film on a substrate by atomic layer deposition and related semiconductor device structures
US10435790B2 (en)2016-11-012019-10-08Asm Ip Holding B.V.Method of subatmospheric plasma-enhanced ALD using capacitively coupled electrodes with narrow gap
US10714350B2 (en)2016-11-012020-07-14ASM IP Holdings, B.V.Methods for forming a transition metal niobium nitride film on a substrate by atomic layer deposition and related semiconductor device structures
US10134757B2 (en)2016-11-072018-11-20Asm Ip Holding B.V.Method of processing a substrate and a device manufactured by using the method
KR102546317B1 (en)2016-11-152023-06-21에이에스엠 아이피 홀딩 비.브이.Gas supply unit and substrate processing apparatus including the same
US10340135B2 (en)2016-11-282019-07-02Asm Ip Holding B.V.Method of topologically restricted plasma-enhanced cyclic deposition of silicon or metal nitride
KR102762543B1 (en)2016-12-142025-02-05에이에스엠 아이피 홀딩 비.브이.Substrate processing apparatus
US11447861B2 (en)2016-12-152022-09-20Asm Ip Holding B.V.Sequential infiltration synthesis apparatus and a method of forming a patterned structure
US11581186B2 (en)2016-12-152023-02-14Asm Ip Holding B.V.Sequential infiltration synthesis apparatus
KR102700194B1 (en)2016-12-192024-08-28에이에스엠 아이피 홀딩 비.브이.Substrate processing apparatus
US10269558B2 (en)2016-12-222019-04-23Asm Ip Holding B.V.Method of forming a structure on a substrate
US10867788B2 (en)2016-12-282020-12-15Asm Ip Holding B.V.Method of forming a structure on a substrate
US11390950B2 (en)2017-01-102022-07-19Asm Ip Holding B.V.Reactor system and method to reduce residue buildup during a film deposition process
EP3568504A4 (en)*2017-01-162021-01-06Sustainable Energy Solutions, LLCMethod and apparatus for desublimation prevention in a direct contact heat exchanger
US10655221B2 (en)2017-02-092020-05-19Asm Ip Holding B.V.Method for depositing oxide film by thermal ALD and PEALD
US10468261B2 (en)2017-02-152019-11-05Asm Ip Holding B.V.Methods for forming a metallic film on a substrate by cyclical deposition and related semiconductor device structures
US9972501B1 (en)*2017-03-142018-05-15Nano-Master, Inc.Techniques and systems for continuous-flow plasma enhanced atomic layer deposition (PEALD)
US10529563B2 (en)2017-03-292020-01-07Asm Ip Holdings B.V.Method for forming doped metal oxide films on a substrate by cyclical deposition and related semiconductor device structures
US10283353B2 (en)2017-03-292019-05-07Asm Ip Holding B.V.Method of reforming insulating film deposited on substrate with recess pattern
KR102457289B1 (en)2017-04-252022-10-21에이에스엠 아이피 홀딩 비.브이.Method for depositing a thin film and manufacturing a semiconductor device
US10770286B2 (en)2017-05-082020-09-08Asm Ip Holdings B.V.Methods for selectively forming a silicon nitride film on a substrate and related semiconductor device structures
US10892156B2 (en)2017-05-082021-01-12Asm Ip Holding B.V.Methods for forming a silicon nitride film on a substrate and related semiconductor device structures
US10446393B2 (en)2017-05-082019-10-15Asm Ip Holding B.V.Methods for forming silicon-containing epitaxial layers and related semiconductor device structures
US10504742B2 (en)2017-05-312019-12-10Asm Ip Holding B.V.Method of atomic layer etching using hydrogen plasma
US10886123B2 (en)2017-06-022021-01-05Asm Ip Holding B.V.Methods for forming low temperature semiconductor layers and related semiconductor device structures
US12040200B2 (en)2017-06-202024-07-16Asm Ip Holding B.V.Semiconductor processing apparatus and methods for calibrating a semiconductor processing apparatus
US11306395B2 (en)2017-06-282022-04-19Asm Ip Holding B.V.Methods for depositing a transition metal nitride film on a substrate by atomic layer deposition and related deposition apparatus
US10685834B2 (en)2017-07-052020-06-16Asm Ip Holdings B.V.Methods for forming a silicon germanium tin layer and related semiconductor device structures
KR20190009245A (en)2017-07-182019-01-28에이에스엠 아이피 홀딩 비.브이.Methods for forming a semiconductor device structure and related semiconductor device structures
US11374112B2 (en)2017-07-192022-06-28Asm Ip Holding B.V.Method for depositing a group IV semiconductor and related semiconductor device structures
US11018002B2 (en)2017-07-192021-05-25Asm Ip Holding B.V.Method for selectively depositing a Group IV semiconductor and related semiconductor device structures
US10541333B2 (en)2017-07-192020-01-21Asm Ip Holding B.V.Method for depositing a group IV semiconductor and related semiconductor device structures
US10312055B2 (en)2017-07-262019-06-04Asm Ip Holding B.V.Method of depositing film by PEALD using negative bias
US10590535B2 (en)2017-07-262020-03-17Asm Ip Holdings B.V.Chemical treatment, deposition and/or infiltration apparatus and method for using the same
US10605530B2 (en)2017-07-262020-03-31Asm Ip Holding B.V.Assembly of a liner and a flange for a vertical furnace as well as the liner and the vertical furnace
TWI815813B (en)2017-08-042023-09-21荷蘭商Asm智慧財產控股公司Showerhead assembly for distributing a gas within a reaction chamber
US10770336B2 (en)2017-08-082020-09-08Asm Ip Holding B.V.Substrate lift mechanism and reactor including same
US10692741B2 (en)2017-08-082020-06-23Asm Ip Holdings B.V.Radiation shield
US11769682B2 (en)2017-08-092023-09-26Asm Ip Holding B.V.Storage apparatus for storing cassettes for substrates and processing apparatus equipped therewith
US10249524B2 (en)2017-08-092019-04-02Asm Ip Holding B.V.Cassette holder assembly for a substrate cassette and holding member for use in such assembly
US11139191B2 (en)2017-08-092021-10-05Asm Ip Holding B.V.Storage apparatus for storing cassettes for substrates and processing apparatus equipped therewith
US20190048467A1 (en)*2017-08-102019-02-14Applied Materials, Inc.Showerhead and process chamber incorporating same
USD900036S1 (en)2017-08-242020-10-27Asm Ip Holding B.V.Heater electrical connector and adapter
US11830730B2 (en)2017-08-292023-11-28Asm Ip Holding B.V.Layer forming method and apparatus
US11295980B2 (en)2017-08-302022-04-05Asm Ip Holding B.V.Methods for depositing a molybdenum metal film over a dielectric surface of a substrate by a cyclical deposition process and related semiconductor device structures
KR102491945B1 (en)2017-08-302023-01-26에이에스엠 아이피 홀딩 비.브이.Substrate processing apparatus
US11164737B2 (en)*2017-08-302021-11-02Applied Materials, Inc.Integrated epitaxy and preclean system
US11056344B2 (en)2017-08-302021-07-06Asm Ip Holding B.V.Layer forming method
KR102401446B1 (en)2017-08-312022-05-24에이에스엠 아이피 홀딩 비.브이.Substrate processing apparatus
US10147597B1 (en)2017-09-142018-12-04Lam Research CorporationTurbulent flow spiral multi-zone precursor vaporizer
US10607895B2 (en)2017-09-182020-03-31Asm Ip Holdings B.V.Method for forming a semiconductor device structure comprising a gate fill metal
KR102630301B1 (en)2017-09-212024-01-29에이에스엠 아이피 홀딩 비.브이.Method of sequential infiltration synthesis treatment of infiltrateable material and structures and devices formed using same
US10844484B2 (en)2017-09-222020-11-24Asm Ip Holding B.V.Apparatus for dispensing a vapor phase reactant to a reaction chamber and related methods
US10658205B2 (en)2017-09-282020-05-19Asm Ip Holdings B.V.Chemical dispensing apparatus and methods for dispensing a chemical to a reaction chamber
US10403504B2 (en)2017-10-052019-09-03Asm Ip Holding B.V.Method for selectively depositing a metallic film on a substrate
US10319588B2 (en)2017-10-102019-06-11Asm Ip Holding B.V.Method for depositing a metal chalcogenide on a substrate by cyclical deposition
US10923344B2 (en)2017-10-302021-02-16Asm Ip Holding B.V.Methods for forming a semiconductor structure and related semiconductor structures
US10910262B2 (en)2017-11-162021-02-02Asm Ip Holding B.V.Method of selectively depositing a capping layer structure on a semiconductor device structure
KR102443047B1 (en)2017-11-162022-09-14에이에스엠 아이피 홀딩 비.브이.Method of processing a substrate and a device manufactured by the same
US11022879B2 (en)2017-11-242021-06-01Asm Ip Holding B.V.Method of forming an enhanced unexposed photoresist layer
CN111344522B (en)2017-11-272022-04-12阿斯莫Ip控股公司Including clean mini-environment device
WO2019103613A1 (en)2017-11-272019-05-31Asm Ip Holding B.V.A storage device for storing wafer cassettes for use with a batch furnace
US10290508B1 (en)2017-12-052019-05-14Asm Ip Holding B.V.Method for forming vertical spacers for spacer-defined patterning
US10872771B2 (en)2018-01-162020-12-22Asm Ip Holding B. V.Method for depositing a material film on a substrate within a reaction chamber by a cyclical deposition process and related device structures
TWI799494B (en)2018-01-192023-04-21荷蘭商Asm 智慧財產控股公司Deposition method
KR102695659B1 (en)2018-01-192024-08-14에이에스엠 아이피 홀딩 비.브이. Method for depositing a gap filling layer by plasma assisted deposition
USD903477S1 (en)2018-01-242020-12-01Asm Ip Holdings B.V.Metal clamp
US11018047B2 (en)2018-01-252021-05-25Asm Ip Holding B.V.Hybrid lift pin
USD880437S1 (en)2018-02-012020-04-07Asm Ip Holding B.V.Gas supply plate for semiconductor manufacturing apparatus
US10535516B2 (en)2018-02-012020-01-14Asm Ip Holdings B.V.Method for depositing a semiconductor structure on a surface of a substrate and related semiconductor structures
US11081345B2 (en)2018-02-062021-08-03Asm Ip Holding B.V.Method of post-deposition treatment for silicon oxide film
US10896820B2 (en)2018-02-142021-01-19Asm Ip Holding B.V.Method for depositing a ruthenium-containing film on a substrate by a cyclical deposition process
WO2019158960A1 (en)2018-02-142019-08-22Asm Ip Holding B.V.A method for depositing a ruthenium-containing film on a substrate by a cyclical deposition process
US10731249B2 (en)2018-02-152020-08-04Asm Ip Holding B.V.Method of forming a transition metal containing film on a substrate by a cyclical deposition process, a method for supplying a transition metal halide compound to a reaction chamber, and related vapor deposition apparatus
US10658181B2 (en)2018-02-202020-05-19Asm Ip Holding B.V.Method of spacer-defined direct patterning in semiconductor fabrication
KR102636427B1 (en)2018-02-202024-02-13에이에스엠 아이피 홀딩 비.브이.Substrate processing method and apparatus
US10975470B2 (en)2018-02-232021-04-13Asm Ip Holding B.V.Apparatus for detecting or monitoring for a chemical precursor in a high temperature environment
US11473195B2 (en)2018-03-012022-10-18Asm Ip Holding B.V.Semiconductor processing apparatus and a method for processing a substrate
US11014853B2 (en)*2018-03-072021-05-25Applied Materials, Inc.Y2O3—ZrO2 erosion resistant material for chamber components in plasma environments
US11629406B2 (en)2018-03-092023-04-18Asm Ip Holding B.V.Semiconductor processing apparatus comprising one or more pyrometers for measuring a temperature of a substrate during transfer of the substrate
US11114283B2 (en)2018-03-162021-09-07Asm Ip Holding B.V.Reactor, system including the reactor, and methods of manufacturing and using same
KR102646467B1 (en)2018-03-272024-03-11에이에스엠 아이피 홀딩 비.브이.Method of forming an electrode on a substrate and a semiconductor device structure including an electrode
US11088002B2 (en)2018-03-292021-08-10Asm Ip Holding B.V.Substrate rack and a substrate processing system and method
US10510536B2 (en)2018-03-292019-12-17Asm Ip Holding B.V.Method of depositing a co-doped polysilicon film on a surface of a substrate within a reaction chamber
US11230766B2 (en)2018-03-292022-01-25Asm Ip Holding B.V.Substrate processing apparatus and method
KR102501472B1 (en)2018-03-302023-02-20에이에스엠 아이피 홀딩 비.브이.Substrate processing method
KR102600229B1 (en)2018-04-092023-11-10에이에스엠 아이피 홀딩 비.브이.Substrate supporting device, substrate processing apparatus including the same and substrate processing method
US12025484B2 (en)2018-05-082024-07-02Asm Ip Holding B.V.Thin film forming method
TWI811348B (en)2018-05-082023-08-11荷蘭商Asm 智慧財產控股公司Methods for depositing an oxide film on a substrate by a cyclical deposition process and related device structures
US12272527B2 (en)2018-05-092025-04-08Asm Ip Holding B.V.Apparatus for use with hydrogen radicals and method of using same
KR20190129718A (en)2018-05-112019-11-20에이에스엠 아이피 홀딩 비.브이.Methods for forming a doped metal carbide film on a substrate and related semiconductor device structures
KR102596988B1 (en)2018-05-282023-10-31에이에스엠 아이피 홀딩 비.브이.Method of processing a substrate and a device manufactured by the same
TWI840362B (en)2018-06-042024-05-01荷蘭商Asm Ip私人控股有限公司Wafer handling chamber with moisture reduction
US11718913B2 (en)2018-06-042023-08-08Asm Ip Holding B.V.Gas distribution system and reactor system including same
US11286562B2 (en)2018-06-082022-03-29Asm Ip Holding B.V.Gas-phase chemical reactor and method of using same
US10797133B2 (en)2018-06-212020-10-06Asm Ip Holding B.V.Method for depositing a phosphorus doped silicon arsenide film and related semiconductor device structures
KR102568797B1 (en)2018-06-212023-08-21에이에스엠 아이피 홀딩 비.브이.Substrate processing system
KR102854019B1 (en)2018-06-272025-09-02에이에스엠 아이피 홀딩 비.브이. Periodic deposition method for forming a metal-containing material and films and structures comprising the metal-containing material
TWI873894B (en)2018-06-272025-02-21荷蘭商Asm Ip私人控股有限公司Cyclic deposition methods for forming metal-containing material and films and structures including the metal-containing material
US10612136B2 (en)2018-06-292020-04-07ASM IP Holding, B.V.Temperature-controlled flange and reactor system including same
KR102686758B1 (en)2018-06-292024-07-18에이에스엠 아이피 홀딩 비.브이.Method for depositing a thin film and manufacturing a semiconductor device
US10755922B2 (en)2018-07-032020-08-25Asm Ip Holding B.V.Method for depositing silicon-free carbon-containing film as gap-fill layer by pulse plasma-assisted deposition
US10388513B1 (en)2018-07-032019-08-20Asm Ip Holding B.V.Method for depositing silicon-free carbon-containing film as gap-fill layer by pulse plasma-assisted deposition
US10767789B2 (en)2018-07-162020-09-08Asm Ip Holding B.V.Diaphragm valves, valve components, and methods for forming valve components
US10483099B1 (en)2018-07-262019-11-19Asm Ip Holding B.V.Method for forming thermally stable organosilicon polymer film
JP2021532268A (en)*2018-07-312021-11-25アプライド マテリアルズ インコーポレイテッドApplied Materials, Incorporated Gas box for CVD chamber
US11053591B2 (en)2018-08-062021-07-06Asm Ip Holding B.V.Multi-port gas injection system and reactor system including same
US10883175B2 (en)2018-08-092021-01-05Asm Ip Holding B.V.Vertical furnace for processing substrates and a liner for use therein
US10829852B2 (en)2018-08-162020-11-10Asm Ip Holding B.V.Gas distribution device for a wafer processing apparatus
US11430674B2 (en)2018-08-222022-08-30Asm Ip Holding B.V.Sensor array, apparatus for dispensing a vapor phase reactant to a reaction chamber and related methods
KR102707956B1 (en)2018-09-112024-09-19에이에스엠 아이피 홀딩 비.브이.Method for deposition of a thin film
US11024523B2 (en)2018-09-112021-06-01Asm Ip Holding B.V.Substrate processing apparatus and method
US11049751B2 (en)2018-09-142021-06-29Asm Ip Holding B.V.Cassette supply system to store and handle cassettes and processing apparatus equipped therewith
US11417534B2 (en)*2018-09-212022-08-16Applied Materials, Inc.Selective material removal
CN110970344B (en)2018-10-012024-10-25Asmip控股有限公司Substrate holding apparatus, system comprising the same and method of using the same
US11232963B2 (en)2018-10-032022-01-25Asm Ip Holding B.V.Substrate processing apparatus and method
KR102592699B1 (en)2018-10-082023-10-23에이에스엠 아이피 홀딩 비.브이.Substrate support unit and apparatuses for depositing thin film and processing the substrate including the same
US10847365B2 (en)2018-10-112020-11-24Asm Ip Holding B.V.Method of forming conformal silicon carbide film by cyclic CVD
US10811256B2 (en)2018-10-162020-10-20Asm Ip Holding B.V.Method for etching a carbon-containing feature
KR102546322B1 (en)2018-10-192023-06-21에이에스엠 아이피 홀딩 비.브이.Substrate processing apparatus and substrate processing method
KR102605121B1 (en)2018-10-192023-11-23에이에스엠 아이피 홀딩 비.브이.Substrate processing apparatus and substrate processing method
USD948463S1 (en)2018-10-242022-04-12Asm Ip Holding B.V.Susceptor for semiconductor substrate supporting apparatus
US10381219B1 (en)2018-10-252019-08-13Asm Ip Holding B.V.Methods for forming a silicon nitride film
US12378665B2 (en)2018-10-262025-08-05Asm Ip Holding B.V.High temperature coatings for a preclean and etch apparatus and related methods
US11087997B2 (en)2018-10-312021-08-10Asm Ip Holding B.V.Substrate processing apparatus for processing substrates
KR102748291B1 (en)2018-11-022024-12-31에이에스엠 아이피 홀딩 비.브이.Substrate support unit and substrate processing apparatus including the same
US11572620B2 (en)2018-11-062023-02-07Asm Ip Holding B.V.Methods for selectively depositing an amorphous silicon film on a substrate
US11031242B2 (en)2018-11-072021-06-08Asm Ip Holding B.V.Methods for depositing a boron doped silicon germanium film
US10847366B2 (en)2018-11-162020-11-24Asm Ip Holding B.V.Methods for depositing a transition metal chalcogenide film on a substrate by a cyclical deposition process
US10818758B2 (en)2018-11-162020-10-27Asm Ip Holding B.V.Methods for forming a metal silicate film on a substrate in a reaction chamber and related semiconductor device structures
US10559458B1 (en)2018-11-262020-02-11Asm Ip Holding B.V.Method of forming oxynitride film
US12040199B2 (en)2018-11-282024-07-16Asm Ip Holding B.V.Substrate processing apparatus for processing substrates
US11217444B2 (en)2018-11-302022-01-04Asm Ip Holding B.V.Method for forming an ultraviolet radiation responsive metal oxide-containing film
KR102636428B1 (en)2018-12-042024-02-13에이에스엠 아이피 홀딩 비.브이.A method for cleaning a substrate processing apparatus
US11158513B2 (en)2018-12-132021-10-26Asm Ip Holding B.V.Methods for forming a rhenium-containing film on a substrate by a cyclical deposition process and related semiconductor device structures
TWI874340B (en)2018-12-142025-03-01荷蘭商Asm Ip私人控股有限公司Method of forming device structure, structure formed by the method and system for performing the method
TWI866480B (en)2019-01-172024-12-11荷蘭商Asm Ip 私人控股有限公司Methods of forming a transition metal containing film on a substrate by a cyclical deposition process
KR102727227B1 (en)2019-01-222024-11-07에이에스엠 아이피 홀딩 비.브이.Semiconductor processing device
CN111524788B (en)2019-02-012023-11-24Asm Ip私人控股有限公司 Method for forming topologically selective films of silicon oxide
KR102626263B1 (en)2019-02-202024-01-16에이에스엠 아이피 홀딩 비.브이.Cyclical deposition method including treatment step and apparatus for same
TWI873122B (en)2019-02-202025-02-21荷蘭商Asm Ip私人控股有限公司Method of filling a recess formed within a surface of a substrate, semiconductor structure formed according to the method, and semiconductor processing apparatus
TWI838458B (en)2019-02-202024-04-11荷蘭商Asm Ip私人控股有限公司Apparatus and methods for plug fill deposition in 3-d nand applications
TWI845607B (en)2019-02-202024-06-21荷蘭商Asm Ip私人控股有限公司Cyclical deposition method and apparatus for filling a recess formed within a substrate surface
TWI842826B (en)2019-02-222024-05-21荷蘭商Asm Ip私人控股有限公司Substrate processing apparatus and method for processing substrate
KR102782593B1 (en)2019-03-082025-03-14에이에스엠 아이피 홀딩 비.브이.Structure Including SiOC Layer and Method of Forming Same
KR102858005B1 (en)2019-03-082025-09-09에이에스엠 아이피 홀딩 비.브이.Method for Selective Deposition of Silicon Nitride Layer and Structure Including Selectively-Deposited Silicon Nitride Layer
US11742198B2 (en)2019-03-082023-08-29Asm Ip Holding B.V.Structure including SiOCN layer and method of forming same
JP2020167398A (en)2019-03-282020-10-08エーエスエム・アイピー・ホールディング・ベー・フェー Door openers and substrate processing equipment provided with door openers
KR102809999B1 (en)2019-04-012025-05-19에이에스엠 아이피 홀딩 비.브이.Method of manufacturing semiconductor device
KR20200123380A (en)2019-04-192020-10-29에이에스엠 아이피 홀딩 비.브이.Layer forming method and apparatus
KR20200125453A (en)2019-04-242020-11-04에이에스엠 아이피 홀딩 비.브이.Gas-phase reactor system and method of using same
US11289326B2 (en)2019-05-072022-03-29Asm Ip Holding B.V.Method for reforming amorphous carbon polymer film
KR20200130121A (en)2019-05-072020-11-18에이에스엠 아이피 홀딩 비.브이.Chemical source vessel with dip tube
KR20200130652A (en)2019-05-102020-11-19에이에스엠 아이피 홀딩 비.브이.Method of depositing material onto a surface and structure formed according to the method
JP7598201B2 (en)2019-05-162024-12-11エーエスエム・アイピー・ホールディング・ベー・フェー Wafer boat handling apparatus, vertical batch furnace and method
JP7612342B2 (en)2019-05-162025-01-14エーエスエム・アイピー・ホールディング・ベー・フェー Wafer boat handling apparatus, vertical batch furnace and method
USD975665S1 (en)2019-05-172023-01-17Asm Ip Holding B.V.Susceptor shaft
USD947913S1 (en)2019-05-172022-04-05Asm Ip Holding B.V.Susceptor shaft
USD935572S1 (en)2019-05-242021-11-09Asm Ip Holding B.V.Gas channel plate
TWI833954B (en)*2019-05-282024-03-01美商應用材料股份有限公司Apparatus for improved flow control in process chambers
TWI838240B (en)2019-05-282024-04-01美商應用材料股份有限公司Thermal process chamber lid with backside pumping
USD922229S1 (en)2019-06-052021-06-15Asm Ip Holding B.V.Device for controlling a temperature of a gas supply unit
KR20200141002A (en)2019-06-062020-12-17에이에스엠 아이피 홀딩 비.브이.Method of using a gas-phase reactor system including analyzing exhausted gas
KR20200141931A (en)2019-06-102020-12-21에이에스엠 아이피 홀딩 비.브이.Method for cleaning quartz epitaxial chambers
KR20200143254A (en)2019-06-112020-12-23에이에스엠 아이피 홀딩 비.브이.Method of forming an electronic structure using an reforming gas, system for performing the method, and structure formed using the method
USD944946S1 (en)2019-06-142022-03-01Asm Ip Holding B.V.Shower plate
USD931978S1 (en)2019-06-272021-09-28Asm Ip Holding B.V.Showerhead vacuum transport
KR20210005515A (en)2019-07-032021-01-14에이에스엠 아이피 홀딩 비.브이.Temperature control assembly for substrate processing apparatus and method of using same
JP7499079B2 (en)2019-07-092024-06-13エーエスエム・アイピー・ホールディング・ベー・フェー Plasma device using coaxial waveguide and substrate processing method
CN112216646A (en)2019-07-102021-01-12Asm Ip私人控股有限公司Substrate supporting assembly and substrate processing device comprising same
KR20210010307A (en)2019-07-162021-01-27에이에스엠 아이피 홀딩 비.브이.Substrate processing apparatus
KR102860110B1 (en)2019-07-172025-09-16에이에스엠 아이피 홀딩 비.브이.Methods of forming silicon germanium structures
KR20210010816A (en)2019-07-172021-01-28에이에스엠 아이피 홀딩 비.브이.Radical assist ignition plasma system and method
US11643724B2 (en)2019-07-182023-05-09Asm Ip Holding B.V.Method of forming structures using a neutral beam
TWI839544B (en)2019-07-192024-04-21荷蘭商Asm Ip私人控股有限公司Method of forming topology-controlled amorphous carbon polymer film
KR20210010817A (en)2019-07-192021-01-28에이에스엠 아이피 홀딩 비.브이.Method of Forming Topology-Controlled Amorphous Carbon Polymer Film
TWI851767B (en)2019-07-292024-08-11荷蘭商Asm Ip私人控股有限公司Methods for selective deposition utilizing n-type dopants and/or alternative dopants to achieve high dopant incorporation
US12169361B2 (en)2019-07-302024-12-17Asm Ip Holding B.V.Substrate processing apparatus and method
CN112309899A (en)2019-07-302021-02-02Asm Ip私人控股有限公司Substrate processing apparatus
CN112309900A (en)2019-07-302021-02-02Asm Ip私人控股有限公司Substrate processing apparatus
US11587814B2 (en)2019-07-312023-02-21Asm Ip Holding B.V.Vertical batch furnace assembly
US11587815B2 (en)2019-07-312023-02-21Asm Ip Holding B.V.Vertical batch furnace assembly
US11227782B2 (en)2019-07-312022-01-18Asm Ip Holding B.V.Vertical batch furnace assembly
CN112323048B (en)2019-08-052024-02-09Asm Ip私人控股有限公司Liquid level sensor for chemical source container
CN112342526A (en)2019-08-092021-02-09Asm Ip私人控股有限公司Heater assembly including cooling device and method of using same
USD965044S1 (en)2019-08-192022-09-27Asm Ip Holding B.V.Susceptor shaft
USD965524S1 (en)2019-08-192022-10-04Asm Ip Holding B.V.Susceptor support
JP2021031769A (en)2019-08-212021-03-01エーエスエム アイピー ホールディング ビー.ブイ.Production apparatus of mixed gas of film deposition raw material and film deposition apparatus
USD979506S1 (en)2019-08-222023-02-28Asm Ip Holding B.V.Insulator
KR20210024423A (en)2019-08-222021-03-05에이에스엠 아이피 홀딩 비.브이.Method for forming a structure with a hole
USD949319S1 (en)2019-08-222022-04-19Asm Ip Holding B.V.Exhaust duct
USD940837S1 (en)2019-08-222022-01-11Asm Ip Holding B.V.Electrode
USD930782S1 (en)2019-08-222021-09-14Asm Ip Holding B.V.Gas distributor
US11286558B2 (en)2019-08-232022-03-29Asm Ip Holding B.V.Methods for depositing a molybdenum nitride film on a surface of a substrate by a cyclical deposition process and related semiconductor device structures including a molybdenum nitride film
KR20210024420A (en)2019-08-232021-03-05에이에스엠 아이피 홀딩 비.브이.Method for depositing silicon oxide film having improved quality by peald using bis(diethylamino)silane
CN119980191A (en)*2019-08-282025-05-13朗姆研究公司 Metal Deposition
KR102806450B1 (en)2019-09-042025-05-12에이에스엠 아이피 홀딩 비.브이.Methods for selective deposition using a sacrificial capping layer
KR102733104B1 (en)2019-09-052024-11-22에이에스엠 아이피 홀딩 비.브이.Substrate processing apparatus
TWI850452B (en)*2019-09-222024-08-01美商應用材料股份有限公司Ald cycle time reduction using process chamber lid with tunable pumping
US12054826B2 (en)*2019-09-222024-08-06Applied Materials, Inc.ALD cycle time reduction using process chamber lid with tunable pumping
US11562901B2 (en)2019-09-252023-01-24Asm Ip Holding B.V.Substrate processing method
CN112593212B (en)2019-10-022023-12-22Asm Ip私人控股有限公司Method for forming topologically selective silicon oxide film by cyclic plasma enhanced deposition process
TWI846953B (en)2019-10-082024-07-01荷蘭商Asm Ip私人控股有限公司Substrate processing device
KR20210042810A (en)2019-10-082021-04-20에이에스엠 아이피 홀딩 비.브이.Reactor system including a gas distribution assembly for use with activated species and method of using same
TW202128273A (en)2019-10-082021-08-01荷蘭商Asm Ip私人控股有限公司Gas injection system, reactor system, and method of depositing material on surface of substratewithin reaction chamber
TWI846966B (en)2019-10-102024-07-01荷蘭商Asm Ip私人控股有限公司Method of forming a photoresist underlayer and structure including same
US12009241B2 (en)2019-10-142024-06-11Asm Ip Holding B.V.Vertical batch furnace assembly with detector to detect cassette
TWI834919B (en)2019-10-162024-03-11荷蘭商Asm Ip私人控股有限公司Method of topology-selective film formation of silicon oxide
US11637014B2 (en)2019-10-172023-04-25Asm Ip Holding B.V.Methods for selective deposition of doped semiconductor material
KR102845724B1 (en)2019-10-212025-08-13에이에스엠 아이피 홀딩 비.브이.Apparatus and methods for selectively etching films
KR20210050453A (en)2019-10-252021-05-07에이에스엠 아이피 홀딩 비.브이.Methods for filling a gap feature on a substrate surface and related semiconductor structures
US11646205B2 (en)2019-10-292023-05-09Asm Ip Holding B.V.Methods of selectively forming n-type doped material on a surface, systems for selectively forming n-type doped material, and structures formed using same
KR20210054983A (en)2019-11-052021-05-14에이에스엠 아이피 홀딩 비.브이.Structures with doped semiconductor layers and methods and systems for forming same
US11501968B2 (en)2019-11-152022-11-15Asm Ip Holding B.V.Method for providing a semiconductor device with silicon filled gaps
KR102861314B1 (en)2019-11-202025-09-17에이에스엠 아이피 홀딩 비.브이.Method of depositing carbon-containing material on a surface of a substrate, structure formed using the method, and system for forming the structure
US11450529B2 (en)2019-11-262022-09-20Asm Ip Holding B.V.Methods for selectively forming a target film on a substrate comprising a first dielectric surface and a second metallic surface
CN112951697B (en)2019-11-262025-07-29Asmip私人控股有限公司Substrate processing apparatus
CN120432376A (en)2019-11-292025-08-05Asm Ip私人控股有限公司Substrate processing apparatus
CN112885692B (en)2019-11-292025-08-15Asmip私人控股有限公司Substrate processing apparatus
JP7527928B2 (en)2019-12-022024-08-05エーエスエム・アイピー・ホールディング・ベー・フェー Substrate processing apparatus and substrate processing method
KR20210070898A (en)2019-12-042021-06-15에이에스엠 아이피 홀딩 비.브이.Substrate processing apparatus
KR20210078405A (en)2019-12-172021-06-28에이에스엠 아이피 홀딩 비.브이.Method of forming vanadium nitride layer and structure including the vanadium nitride layer
CN114787415B (en)*2019-12-172024-09-13应用材料公司High density plasma enhanced chemical vapor deposition chamber
KR20210080214A (en)2019-12-192021-06-30에이에스엠 아이피 홀딩 비.브이.Methods for filling a gap feature on a substrate and related semiconductor structures
KR102800139B1 (en)*2019-12-302025-04-28주성엔지니어링(주)Substrate processing method and apparatus
JP7730637B2 (en)2020-01-062025-08-28エーエスエム・アイピー・ホールディング・ベー・フェー Gas delivery assembly, components thereof, and reactor system including same
JP7636892B2 (en)2020-01-062025-02-27エーエスエム・アイピー・ホールディング・ベー・フェー Channeled Lift Pins
US11993847B2 (en)2020-01-082024-05-28Asm Ip Holding B.V.Injector
US11087959B2 (en)2020-01-092021-08-10Nano-Master, Inc.Techniques for a hybrid design for efficient and economical plasma enhanced atomic layer deposition (PEALD) and plasma enhanced chemical vapor deposition (PECVD)
KR20210093163A (en)2020-01-162021-07-27에이에스엠 아이피 홀딩 비.브이.Method of forming high aspect ratio features
KR102675856B1 (en)2020-01-202024-06-17에이에스엠 아이피 홀딩 비.브이.Method of forming thin film and method of modifying surface of thin film
TWI889744B (en)2020-01-292025-07-11荷蘭商Asm Ip私人控股有限公司Contaminant trap system, and baffle plate stack
TW202513845A (en)2020-02-032025-04-01荷蘭商Asm Ip私人控股有限公司Semiconductor structures and methods for forming the same
KR20210100010A (en)2020-02-042021-08-13에이에스엠 아이피 홀딩 비.브이.Method and apparatus for transmittance measurements of large articles
US11776846B2 (en)2020-02-072023-10-03Asm Ip Holding B.V.Methods for depositing gap filling fluids and related systems and devices
US11640900B2 (en)2020-02-122023-05-02Nano-Master, Inc.Electron cyclotron rotation (ECR)-enhanced hollow cathode plasma source (HCPS)
KR20210103956A (en)2020-02-132021-08-24에이에스엠 아이피 홀딩 비.브이.Substrate processing apparatus including light receiving device and calibration method of light receiving device
TW202146691A (en)2020-02-132021-12-16荷蘭商Asm Ip私人控股有限公司Gas distribution assembly, shower plate assembly, and method of adjusting conductance of gas to reaction chamber
TWI855223B (en)2020-02-172024-09-11荷蘭商Asm Ip私人控股有限公司Method for growing phosphorous-doped silicon layer
CN113410160A (en)2020-02-282021-09-17Asm Ip私人控股有限公司System specially used for cleaning parts
KR20210113043A (en)2020-03-042021-09-15에이에스엠 아이피 홀딩 비.브이.Alignment fixture for a reactor system
KR20210116240A (en)2020-03-112021-09-27에이에스엠 아이피 홀딩 비.브이.Substrate handling device with adjustable joints
US11876356B2 (en)2020-03-112024-01-16Asm Ip Holding B.V.Lockout tagout assembly and system and method of using same
KR102775390B1 (en)2020-03-122025-02-28에이에스엠 아이피 홀딩 비.브이.Method for Fabricating Layer Structure Having Target Topological Profile
US12173404B2 (en)2020-03-172024-12-24Asm Ip Holding B.V.Method of depositing epitaxial material, structure formed using the method, and system for performing the method
KR102755229B1 (en)2020-04-022025-01-14에이에스엠 아이피 홀딩 비.브이.Thin film forming method
TWI887376B (en)2020-04-032025-06-21荷蘭商Asm Ip私人控股有限公司Method for manufacturing semiconductor device
TWI888525B (en)2020-04-082025-07-01荷蘭商Asm Ip私人控股有限公司Apparatus and methods for selectively etching silcon oxide films
US11821078B2 (en)2020-04-152023-11-21Asm Ip Holding B.V.Method for forming precoat film and method for forming silicon-containing film
US11854839B2 (en)*2020-04-152023-12-26Mks Instruments, Inc.Valve apparatuses and related methods for reactive process gas isolation and facilitating purge during isolation
KR20210128343A (en)2020-04-152021-10-26에이에스엠 아이피 홀딩 비.브이.Method of forming chromium nitride layer and structure including the chromium nitride layer
US11996289B2 (en)2020-04-162024-05-28Asm Ip Holding B.V.Methods of forming structures including silicon germanium and silicon layers, devices formed using the methods, and systems for performing the methods
KR20210130646A (en)2020-04-212021-11-01에이에스엠 아이피 홀딩 비.브이.Method for processing a substrate
TW202208671A (en)2020-04-242022-03-01荷蘭商Asm Ip私人控股有限公司Methods of forming structures including vanadium boride and vanadium phosphide layers
KR20210132600A (en)2020-04-242021-11-04에이에스엠 아이피 홀딩 비.브이.Methods and systems for depositing a layer comprising vanadium, nitrogen, and a further element
CN113555279A (en)2020-04-242021-10-26Asm Ip私人控股有限公司 Methods of forming vanadium nitride-containing layers and structures comprising the same
KR20210132612A (en)2020-04-242021-11-04에이에스엠 아이피 홀딩 비.브이.Methods and apparatus for stabilizing vanadium compounds
KR102866804B1 (en)2020-04-242025-09-30에이에스엠 아이피 홀딩 비.브이.Vertical batch furnace assembly comprising a cooling gas supply
KR102783898B1 (en)2020-04-292025-03-18에이에스엠 아이피 홀딩 비.브이.Solid source precursor vessel
KR20210134869A (en)2020-05-012021-11-11에이에스엠 아이피 홀딩 비.브이.Fast FOUP swapping with a FOUP handler
JP7726664B2 (en)2020-05-042025-08-20エーエスエム・アイピー・ホールディング・ベー・フェー Substrate processing system for processing a substrate
KR102788543B1 (en)2020-05-132025-03-27에이에스엠 아이피 홀딩 비.브이.Laser alignment fixture for a reactor system
TW202146699A (en)2020-05-152021-12-16荷蘭商Asm Ip私人控股有限公司Method of forming a silicon germanium layer, semiconductor structure, semiconductor device, method of forming a deposition layer, and deposition system
KR20210143653A (en)2020-05-192021-11-29에이에스엠 아이피 홀딩 비.브이.Substrate processing apparatus
KR20210145079A (en)2020-05-212021-12-01에이에스엠 아이피 홀딩 비.브이.Flange and apparatus for processing substrates
KR102795476B1 (en)2020-05-212025-04-11에이에스엠 아이피 홀딩 비.브이.Structures including multiple carbon layers and methods of forming and using same
TWI873343B (en)2020-05-222025-02-21荷蘭商Asm Ip私人控股有限公司Reaction system for forming thin film on substrate
KR20210146802A (en)2020-05-262021-12-06에이에스엠 아이피 홀딩 비.브이.Method for depositing boron and gallium containing silicon germanium layers
TWI876048B (en)2020-05-292025-03-11荷蘭商Asm Ip私人控股有限公司Substrate processing device
TW202212620A (en)2020-06-022022-04-01荷蘭商Asm Ip私人控股有限公司Apparatus for processing substrate, method of forming film, and method of controlling apparatus for processing substrate
TW202208659A (en)2020-06-162022-03-01荷蘭商Asm Ip私人控股有限公司Method for depositing boron containing silicon germanium layers
US11447866B2 (en)2020-06-172022-09-20Applied Materials, Inc.High temperature chemical vapor deposition lid
TW202218133A (en)2020-06-242022-05-01荷蘭商Asm Ip私人控股有限公司Method for forming a layer provided with silicon
TWI873359B (en)2020-06-302025-02-21荷蘭商Asm Ip私人控股有限公司Substrate processing method
US12431354B2 (en)2020-07-012025-09-30Asm Ip Holding B.V.Silicon nitride and silicon oxide deposition methods using fluorine inhibitor
TW202202649A (en)2020-07-082022-01-16荷蘭商Asm Ip私人控股有限公司Substrate processing method
US20230253189A1 (en)*2020-07-132023-08-10Lam Research CorporationSeal venting in a substrate processing chamber
KR20220010438A (en)2020-07-172022-01-25에이에스엠 아이피 홀딩 비.브이.Structures and methods for use in photolithography
KR20220011092A (en)2020-07-202022-01-27에이에스엠 아이피 홀딩 비.브이.Method and system for forming structures including transition metal layers
TWI878570B (en)2020-07-202025-04-01荷蘭商Asm Ip私人控股有限公司Method and system for depositing molybdenum layers
US12322591B2 (en)2020-07-272025-06-03Asm Ip Holding B.V.Thin film deposition process
KR20220021863A (en)2020-08-142022-02-22에이에스엠 아이피 홀딩 비.브이.Method for processing a substrate
US12040177B2 (en)2020-08-182024-07-16Asm Ip Holding B.V.Methods for forming a laminate film by cyclical plasma-enhanced deposition processes
TW202228863A (en)2020-08-252022-08-01荷蘭商Asm Ip私人控股有限公司Method for cleaning a substrate, method for selectively depositing, and reaction system
US11725280B2 (en)2020-08-262023-08-15Asm Ip Holding B.V.Method for forming metal silicon oxide and metal silicon oxynitride layers
TW202229601A (en)2020-08-272022-08-01荷蘭商Asm Ip私人控股有限公司Method of forming patterned structures, method of manipulating mechanical property, device structure, and substrate processing system
WO2022051079A1 (en)*2020-09-022022-03-10Applied Materials, Inc.Showerhead design to control stray deposition
TW202217045A (en)2020-09-102022-05-01荷蘭商Asm Ip私人控股有限公司Methods for depositing gap filing fluids and related systems and devices
USD990534S1 (en)2020-09-112023-06-27Asm Ip Holding B.V.Weighted lift pin
KR20220036866A (en)2020-09-162022-03-23에이에스엠 아이피 홀딩 비.브이.Silicon oxide deposition method
US11605544B2 (en)2020-09-182023-03-14Applied Materials, Inc.Methods and systems for cleaning high aspect ratio structures
USD1012873S1 (en)2020-09-242024-01-30Asm Ip Holding B.V.Electrode for semiconductor processing apparatus
TWI889903B (en)2020-09-252025-07-11荷蘭商Asm Ip私人控股有限公司Semiconductor processing method
US12009224B2 (en)2020-09-292024-06-11Asm Ip Holding B.V.Apparatus and method for etching metal nitrides
KR20220045900A (en)2020-10-062022-04-13에이에스엠 아이피 홀딩 비.브이.Deposition method and an apparatus for depositing a silicon-containing material
CN114293174A (en)2020-10-072022-04-08Asm Ip私人控股有限公司Gas supply unit and substrate processing apparatus including the same
TW202229613A (en)2020-10-142022-08-01荷蘭商Asm Ip私人控股有限公司Method of depositing material on stepped structure
TW202232565A (en)2020-10-152022-08-16荷蘭商Asm Ip私人控股有限公司Method of manufacturing semiconductor device, and substrate treatment apparatus using ether-cat
TW202217037A (en)2020-10-222022-05-01荷蘭商Asm Ip私人控股有限公司Method of depositing vanadium metal, structure, device and a deposition assembly
TW202223136A (en)2020-10-282022-06-16荷蘭商Asm Ip私人控股有限公司Method for forming layer on substrate, and semiconductor processing system
TW202229620A (en)2020-11-122022-08-01特文特大學Deposition system, method for controlling reaction condition, method for depositing
TW202229795A (en)2020-11-232022-08-01荷蘭商Asm Ip私人控股有限公司A substrate processing apparatus with an injector
TW202235649A (en)2020-11-242022-09-16荷蘭商Asm Ip私人控股有限公司Methods for filling a gap and related systems and devices
TW202235675A (en)2020-11-302022-09-16荷蘭商Asm Ip私人控股有限公司Injector, and substrate processing apparatus
US12255053B2 (en)2020-12-102025-03-18Asm Ip Holding B.V.Methods and systems for depositing a layer
TW202233884A (en)2020-12-142022-09-01荷蘭商Asm Ip私人控股有限公司Method of forming structures for threshold voltage control
US11946137B2 (en)2020-12-162024-04-02Asm Ip Holding B.V.Runout and wobble measurement fixtures
TW202232639A (en)2020-12-182022-08-16荷蘭商Asm Ip私人控股有限公司Wafer processing apparatus with a rotatable table
US12197125B2 (en)2020-12-222025-01-14Nano-Master, Inc.Mask and reticle protection with atomic layer deposition (ALD)
TW202231903A (en)2020-12-222022-08-16荷蘭商Asm Ip私人控股有限公司Transition metal deposition method, transition metal layer, and deposition assembly for depositing transition metal on substrate
TW202242184A (en)2020-12-222022-11-01荷蘭商Asm Ip私人控股有限公司Precursor capsule, precursor vessel, vapor deposition assembly, and method of loading solid precursor into precursor vessel
TW202226899A (en)2020-12-222022-07-01荷蘭商Asm Ip私人控股有限公司Plasma treatment device having matching box
US11742185B2 (en)*2021-03-262023-08-29Applied Materials, Inc.Uniform in situ cleaning and deposition
USD981973S1 (en)2021-05-112023-03-28Asm Ip Holding B.V.Reactor wall for substrate processing apparatus
USD1023959S1 (en)2021-05-112024-04-23Asm Ip Holding B.V.Electrode for substrate processing apparatus
USD980813S1 (en)2021-05-112023-03-14Asm Ip Holding B.V.Gas flow control plate for substrate processing apparatus
USD980814S1 (en)2021-05-112023-03-14Asm Ip Holding B.V.Gas distributor for substrate processing apparatus
TW202403086A (en)*2021-07-122024-01-16美商應用材料股份有限公司Improved showerhead pumping geometry for precursor containment
US12180586B2 (en)2021-08-132024-12-31NanoMaster, Inc.Apparatus and methods for roll-to-roll (R2R) plasma enhanced/activated atomic layer deposition (PEALD/PAALD)
USD990441S1 (en)2021-09-072023-06-27Asm Ip Holding B.V.Gas flow control plate
USD1060598S1 (en)2021-12-032025-02-04Asm Ip Holding B.V.Split showerhead cover
CN114783909A (en)*2022-03-312022-07-22北京北方华创微电子装备有限公司Semiconductor processing equipment and process chamber thereof
CN115572938B (en)*2022-07-182024-03-22江西弘耀光学水晶有限公司High-precision optical lens coating method
WO2024238572A2 (en)*2023-05-162024-11-21Eugenus, Inc.Showerhead assembly for cyclic vapor deposition with enhanced gas mixing
USD1089130S1 (en)2024-01-192025-08-19Applied Materials, Inc.Process chamber manifold

Family Cites Families (149)

* Cited by examiner, † Cited by third party
Publication numberPriority datePublication dateAssigneeTitle
US3144035A (en)*1963-02-011964-08-11Nat Res CorpHigh vacuum system
US4229655A (en)*1979-05-231980-10-21Nova Associates, Inc.Vacuum chamber for treating workpieces with beams
JPS5764228A (en)*1980-10-081982-04-19Fuji Photo Film Co LtdSilver halide photographic material
CA1272661A (en)*1985-05-111990-08-14Yuji ChibaReaction apparatus
US4854263B1 (en)*1987-08-141997-06-17Applied Materials IncInlet manifold and methods for increasing gas dissociation and for PECVD of dielectric films
US5359254A (en)*1990-06-261994-10-25Research Institute Of Applied Mechanics And ElectrodynamicsPlasma compensation cathode
GB9202434D0 (en)*1992-02-051992-03-18Xaar LtdMethod of and apparatus for forming nozzles
US5578132A (en)*1993-07-071996-11-26Tokyo Electron Kabushiki KaishaApparatus for heat treating semiconductors at normal pressure and low pressure
US5512078A (en)*1994-03-241996-04-30Griffin; Stephen E.Apparatus for making linearly tapered bores in quartz tubing with a controlled laser
EP0738788B1 (en)*1995-04-202003-08-13Ebara CorporationThin-Film vapor deposition apparatus
JP3380091B2 (en)*1995-06-092003-02-24株式会社荏原製作所 Reactive gas injection head and thin film vapor phase growth apparatus
KR100492258B1 (en)*1996-10-112005-09-02가부시키가이샤 에바라 세이사꾸쇼 Reaction gas ejection head
EP1008674B1 (en)*1997-04-112013-05-29Tokyo Electron LimitedElecrode unit and processor
US6024799A (en)*1997-07-112000-02-15Applied Materials, Inc.Chemical vapor deposition manifold
JP3314151B2 (en)*1998-01-052002-08-12株式会社日立国際電気 Plasma CVD apparatus and method for manufacturing semiconductor device
US6635578B1 (en)*1998-02-092003-10-21Applied Materials, IncMethod of operating a dual chamber reactor with neutral density decoupled from ion density
US6454860B2 (en)*1998-10-272002-09-24Applied Materials, Inc.Deposition reactor having vaporizing, mixing and cleaning capabilities
US6450116B1 (en)*1999-04-222002-09-17Applied Materials, Inc.Apparatus for exposing a substrate to plasma radicals
US6565661B1 (en)*1999-06-042003-05-20Simplus Systems CorporationHigh flow conductance and high thermal conductance showerhead system and method
KR100780143B1 (en)*2000-02-042007-11-27아익스트론 아게 Apparatus and methods for depositing one or more layers on a substrate
TW580735B (en)*2000-02-212004-03-21Hitachi LtdPlasma treatment apparatus and treating method of sample material
US6302965B1 (en)*2000-08-152001-10-16Applied Materials, Inc.Dispersion plate for flowing vaporizes compounds used in chemical vapor deposition of films onto semiconductor surfaces
US6878206B2 (en)*2001-07-162005-04-12Applied Materials, Inc.Lid assembly for a processing system to facilitate sequential deposition techniques
US20030019428A1 (en)*2001-04-282003-01-30Applied Materials, Inc.Chemical vapor deposition chamber
WO2003003414A2 (en)*2001-06-292003-01-09Tokyo Electron LimitedDirected gas injection apparatus for semiconductor processing
US20080102203A1 (en)*2001-10-262008-05-01Dien-Yeh WuVortex chamber lids for atomic layer deposition
US7780785B2 (en)*2001-10-262010-08-24Applied Materials, Inc.Gas delivery apparatus for atomic layer deposition
US7780789B2 (en)*2001-10-262010-08-24Applied Materials, Inc.Vortex chamber lids for atomic layer deposition
US6916398B2 (en)*2001-10-262005-07-12Applied Materials, Inc.Gas delivery apparatus and method for atomic layer deposition
US20080102208A1 (en)*2001-10-262008-05-01Dien-Yeh WuVortex chamber lids for atomic layer deposition
US7081271B2 (en)*2001-12-072006-07-25Applied Materials, Inc.Cyclical deposition of refractory metal silicon nitride
US20030116087A1 (en)*2001-12-212003-06-26Nguyen Anh N.Chamber hardware design for titanium nitride atomic layer deposition
AU2003238853A1 (en)*2002-01-252003-09-02Applied Materials, Inc.Apparatus for cyclical deposition of thin films
US6911391B2 (en)*2002-01-262005-06-28Applied Materials, Inc.Integration of titanium and titanium nitride layers
US6866746B2 (en)2002-01-262005-03-15Applied Materials, Inc.Clamshell and small volume chamber with fixed substrate support
US20030140857A1 (en)*2002-01-282003-07-31Applied Materials, Inc.Apparatus and method for low pressure CVD deposition of tungsten and tungsten nitride
JP4090347B2 (en)2002-03-182008-05-28株式会社日立国際電気 Semiconductor device manufacturing method and substrate processing apparatus
US20030213560A1 (en)*2002-05-162003-11-20Yaxin WangTandem wafer processing system and process
US20030224217A1 (en)*2002-05-312003-12-04Applied Materials, Inc.Metal nitride formation
US7067439B2 (en)*2002-06-142006-06-27Applied Materials, Inc.ALD metal oxide deposition process using direct oxidation
US7217336B2 (en)*2002-06-202007-05-15Tokyo Electron LimitedDirected gas injection apparatus for semiconductor processing
US6962348B2 (en)*2002-07-292005-11-08Tokyo Electron LimitedSealing apparatus having a single groove
US7032352B2 (en)2002-07-312006-04-25Zebuhr William HStructure to limit damage due to failure
US6955725B2 (en)*2002-08-152005-10-18Micron Technology, Inc.Reactors with isolated gas connectors and methods for depositing materials onto micro-device workpieces
US6784096B2 (en)*2002-09-112004-08-31Applied Materials, Inc.Methods and apparatus for forming barrier layers in high aspect ratio vias
US7166200B2 (en)*2002-09-302007-01-23Tokyo Electron LimitedMethod and apparatus for an improved upper electrode plate in a plasma processing system
US20040069227A1 (en)*2002-10-092004-04-15Applied Materials, Inc.Processing chamber configured for uniform gas flow
EP1420080A3 (en)*2002-11-142005-11-09Applied Materials, Inc.Apparatus and method for hybrid chemical deposition processes
US7097886B2 (en)*2002-12-132006-08-29Applied Materials, Inc.Deposition process for high aspect ratio trenches
US7384876B2 (en)*2002-12-202008-06-10Tokyo Electron LimitedMethod and apparatus for determining consumable lifetime
US7270713B2 (en)*2003-01-072007-09-18Applied Materials, Inc.Tunable gas distribution plate assembly
US7262133B2 (en)*2003-01-072007-08-28Applied Materials, Inc.Enhancement of copper line reliability using thin ALD tan film to cap the copper line
JP2004239251A (en)*2003-02-062004-08-26Aisan Ind Co LtdFuel injection valve
US20040173313A1 (en)*2003-03-032004-09-09Bradley BeachFire polished showerhead electrode
US6942753B2 (en)*2003-04-162005-09-13Applied Materials, Inc.Gas distribution plate assembly for large area plasma enhanced chemical vapor deposition
US6921437B1 (en)*2003-05-302005-07-26Aviza Technology, Inc.Gas distribution system
US6852139B2 (en)*2003-07-112005-02-08Excellatron Solid State, LlcSystem and method of producing thin-film electrolyte
US6886240B2 (en)*2003-07-112005-05-03Excellatron Solid State, LlcApparatus for producing thin-film electrolyte
JP2005109194A (en)2003-09-302005-04-21Japan Steel Works Ltd:The CVD reaction chamber cleaning device
US7408225B2 (en)2003-10-092008-08-05Asm Japan K.K.Apparatus and method for forming thin film using upstream and downstream exhaust mechanisms
TW200526800A (en)*2003-12-152005-08-16Applied Materials IncEdge flow faceplate for improvement of CVD film properties
US7892357B2 (en)2004-01-122011-02-22Axcelis Technologies, Inc.Gas distribution plate assembly for plasma reactors
US20060033678A1 (en)*2004-01-262006-02-16Applied Materials, Inc.Integrated electroless deposition system
US20050218115A1 (en)*2004-02-062005-10-06Applied Materials, Inc.Anti-clogging nozzle for semiconductor processing
US20060051966A1 (en)*2004-02-262006-03-09Applied Materials, Inc.In-situ chamber clean process to remove by-product deposits from chemical vapor etch chamber
US20050230350A1 (en)*2004-02-262005-10-20Applied Materials, Inc.In-situ dry clean chamber for front end of line fabrication
WO2005098922A1 (en)*2004-03-312005-10-20Hitachi Kokusai Electric Inc.Semiconductor device manufacturing method
US8083853B2 (en)*2004-05-122011-12-27Applied Materials, Inc.Plasma uniformity control by gas diffuser hole design
US20050252449A1 (en)*2004-05-122005-11-17Nguyen Son TControl of gas flow and delivery to suppress the formation of particles in an MOCVD/ALD system
US8328939B2 (en)*2004-05-122012-12-11Applied Materials, Inc.Diffuser plate with slit valve compensation
US8074599B2 (en)*2004-05-122011-12-13Applied Materials, Inc.Plasma uniformity control by gas diffuser curvature
US8119210B2 (en)*2004-05-212012-02-21Applied Materials, Inc.Formation of a silicon oxynitride layer on a high-k dielectric material
US20060137608A1 (en)*2004-12-282006-06-29Choi Seung WAtomic layer deposition apparatus
US20060162661A1 (en)*2005-01-222006-07-27Applied Materials, Inc.Mixing energized and non-energized gases for silicon nitride deposition
US7651568B2 (en)*2005-03-282010-01-26Tokyo Electron LimitedPlasma enhanced atomic layer deposition system
US20060266288A1 (en)*2005-05-272006-11-30Applied Materials, Inc.High plasma utilization for remote plasma clean
JP4943669B2 (en)*2005-06-082012-05-30東京エレクトロン株式会社 Vacuum device seal structure
US7601652B2 (en)*2005-06-212009-10-13Applied Materials, Inc.Method for treating substrates and films with photoexcitation
JP4997842B2 (en)*2005-10-182012-08-08東京エレクトロン株式会社 Processing equipment
TWI332532B (en)*2005-11-042010-11-01Applied Materials IncApparatus and process for plasma-enhanced atomic layer deposition
CN101370963B (en)*2006-01-192012-03-28Asm美国公司 High temperature atomic layer deposition intake manifold
US20070163716A1 (en)2006-01-192007-07-19Taiwan Semiconductor Manufacturing Co., Ltd.Gas distribution apparatuses and methods for controlling gas distribution apparatuses
US7494545B2 (en)*2006-02-032009-02-24Applied Materials, Inc.Epitaxial deposition process and apparatus
KR20070093197A (en)*2006-03-132007-09-18삼성전자주식회사 Shower head and thin film deposition apparatus including the same
US8268078B2 (en)*2006-03-162012-09-18Tokyo Electron LimitedMethod and apparatus for reducing particle contamination in a deposition system
US8034176B2 (en)*2006-03-282011-10-11Tokyo Electron LimitedGas distribution system for a post-etch treatment system
US20070281106A1 (en)*2006-05-302007-12-06Applied Materials, Inc.Process chamber for dielectric gapfill
US20070289534A1 (en)*2006-05-302007-12-20Applied Materials, Inc.Process chamber for dielectric gapfill
US7476291B2 (en)*2006-09-282009-01-13Lam Research CorporationHigh chamber temperature process and chamber design for photo-resist stripping and post-metal etch passivation
KR101064354B1 (en)*2006-11-092011-09-14가부시키가이샤 알박 Barrier Film Formation Method
US8821637B2 (en)*2007-01-292014-09-02Applied Materials, Inc.Temperature controlled lid assembly for tungsten nitride deposition
US8235001B2 (en)*2007-04-022012-08-07Hitachi Kokusai Electric Inc.Substrate processing apparatus and method for manufacturing semiconductor device
WO2008129977A1 (en)*2007-04-172008-10-30Ulvac, Inc.Film forming apparatus
US8021514B2 (en)*2007-07-112011-09-20Applied Materials, Inc.Remote plasma source for pre-treatment of substrates prior to deposition
US20090084317A1 (en)*2007-09-282009-04-02Applied Materials, Inc.Atomic layer deposition chamber and components
US7541297B2 (en)*2007-10-222009-06-02Applied Materials, Inc.Method and system for improving dielectric film quality for void free gap fill
US8092606B2 (en)*2007-12-182012-01-10Asm Genitech Korea Ltd.Deposition apparatus
JP5308679B2 (en)*2008-01-222013-10-09東京エレクトロン株式会社 Seal mechanism, seal groove, seal member, and substrate processing apparatus
WO2009104732A1 (en)*2008-02-202009-08-27東京エレクトロン株式会社Gas supply device
JP5223377B2 (en)*2008-02-292013-06-26東京エレクトロン株式会社 Electrode for plasma processing apparatus, plasma processing apparatus and plasma processing method
JP2009239082A (en)2008-03-272009-10-15Tokyo Electron LtdGas feeding device, treating device, and treating method
JP5243089B2 (en)*2008-04-092013-07-24東京エレクトロン株式会社 Seal structure of plasma processing apparatus, sealing method, and plasma processing apparatus
JP5396745B2 (en)*2008-05-232014-01-22東京エレクトロン株式会社 Plasma processing equipment
KR20110022036A (en)*2008-06-022011-03-04맷슨 테크놀로지, 인크. Substrate Processing Method
US7699935B2 (en)*2008-06-192010-04-20Applied Materials, Inc.Method and system for supplying a cleaning gas into a process chamber
US8291857B2 (en)*2008-07-032012-10-23Applied Materials, Inc.Apparatuses and methods for atomic layer deposition
JP5231117B2 (en)*2008-07-242013-07-10株式会社ニューフレアテクノロジー Film forming apparatus and film forming method
US8187381B2 (en)2008-08-222012-05-29Applied Materials, Inc.Process gas delivery for semiconductor process chamber
US20100183825A1 (en)*2008-12-312010-07-22Cambridge Nanotech Inc.Plasma atomic layer deposition system and method
US20100317198A1 (en)*2009-06-122010-12-16Novellus Systems, Inc.Remote plasma processing of interface surfaces
US7935643B2 (en)*2009-08-062011-05-03Applied Materials, Inc.Stress management for tensile films
EP2292953A1 (en)*2009-09-072011-03-09Fei CompanyHigh-vacuum seal
TWI385272B (en)2009-09-252013-02-11Ind Tech Res InstGas distribution plate and apparatus using the same
US8329587B2 (en)*2009-10-052012-12-11Applied Materials, Inc.Post-planarization densification
US8742665B2 (en)*2009-11-182014-06-03Applied Materials, Inc.Plasma source design
US20110136346A1 (en)*2009-12-042011-06-09Axcelis Technologies, Inc.Substantially Non-Oxidizing Plasma Treatment Devices and Processes
US20110151677A1 (en)*2009-12-212011-06-23Applied Materials, Inc.Wet oxidation process performed on a dielectric material formed from a flowable cvd process
US20110303146A1 (en)*2009-12-282011-12-15Osamu NishijimaPlasma doping apparatus
SG183536A1 (en)*2010-03-122012-09-27Applied Materials IncAtomic layer deposition chamber with multi inject
US8721791B2 (en)*2010-07-282014-05-13Applied Materials, Inc.Showerhead support structure for improved gas flow
US8771539B2 (en)*2011-02-222014-07-08Applied Materials, Inc.Remotely-excited fluorine and water vapor etch
US20120220116A1 (en)*2011-02-252012-08-30Applied Materials, Inc.Dry Chemical Cleaning For Semiconductor Processing
US9064815B2 (en)*2011-03-142015-06-23Applied Materials, Inc.Methods for etch of metal and metal-oxide films
KR101234594B1 (en)*2011-07-252013-02-19피에스케이 주식회사Baffle and substrate treating apparatus including the baffle
US8771536B2 (en)*2011-08-012014-07-08Applied Materials, Inc.Dry-etch for silicon-and-carbon-containing films
US20130045605A1 (en)*2011-08-182013-02-21Applied Materials, Inc.Dry-etch for silicon-and-nitrogen-containing films
US8679982B2 (en)*2011-08-262014-03-25Applied Materials, Inc.Selective suppression of dry-etch rate of materials containing both silicon and oxygen
US8679983B2 (en)*2011-09-012014-03-25Applied Materials, Inc.Selective suppression of dry-etch rate of materials containing both silicon and nitrogen
US8808563B2 (en)*2011-10-072014-08-19Applied Materials, Inc.Selective etch of silicon by way of metastable hydrogen termination
US9017481B1 (en)*2011-10-282015-04-28Asm America, Inc.Process feed management for semiconductor substrate processing
US8586479B2 (en)*2012-01-232013-11-19Applied Materials, Inc.Methods for forming a contact metal layer in semiconductor devices
US9466524B2 (en)*2012-01-312016-10-11Applied Materials, Inc.Method of depositing metals using high frequency plasma
US9330939B2 (en)*2012-03-282016-05-03Applied Materials, Inc.Method of enabling seamless cobalt gap-fill
US9976215B2 (en)*2012-05-012018-05-22Taiwan Semiconductor Manufacturing Co., Ltd.Semiconductor film formation apparatus and process
US9132436B2 (en)*2012-09-212015-09-15Applied Materials, Inc.Chemical control features in wafer process equipment
US10714315B2 (en)*2012-10-122020-07-14Asm Ip Holdings B.V.Semiconductor reaction chamber showerhead
US9230815B2 (en)*2012-10-262016-01-05Appled Materials, Inc.Methods for depositing fluorine/carbon-free conformal tungsten
US20140261802A1 (en)*2013-03-132014-09-18Becquerel & Sievert Co., Ltd.Vacuum isolation device
WO2014178160A1 (en)*2013-04-302014-11-06東京エレクトロン株式会社Film formation device
JP5793170B2 (en)2013-09-302015-10-14株式会社日立国際電気 Semiconductor device manufacturing method, substrate processing apparatus, and program
US8951429B1 (en)*2013-10-292015-02-10Applied Materials, Inc.Tungsten oxide processing
JP5764228B1 (en)*2014-03-182015-08-12株式会社日立国際電気 Substrate processing apparatus, semiconductor device manufacturing method, program, and recording medium
US11302520B2 (en)*2014-06-282022-04-12Applied Materials, Inc.Chamber apparatus for chemical etching of dielectric materials
JP5792364B1 (en)*2014-07-312015-10-07株式会社日立国際電気 Substrate processing apparatus, chamber lid assembly, semiconductor device manufacturing method, program, and recording medium
US10407771B2 (en)*2014-10-062019-09-10Applied Materials, Inc.Atomic layer deposition chamber with thermal lid
JP5916909B1 (en)*2015-02-062016-05-11株式会社日立国際電気 Substrate processing apparatus, gas rectifier, semiconductor device manufacturing method and program
US11384432B2 (en)*2015-04-222022-07-12Applied Materials, Inc.Atomic layer deposition chamber with funnel-shaped gas dispersion channel and gas distribution plate
US20190048467A1 (en)*2017-08-102019-02-14Applied Materials, Inc.Showerhead and process chamber incorporating same
TWI838240B (en)*2019-05-282024-04-01美商應用材料股份有限公司Thermal process chamber lid with backside pumping

Also Published As

Publication numberPublication date
US11932939B2 (en)2024-03-19
SG11201707640WA (en)2017-11-29
IL284142B1 (en)2023-12-01
IL254759B1 (en)2023-01-01
KR20210046839A (en)2021-04-28
KR20170140282A (en)2017-12-20
TW201718927A (en)2017-06-01
EP3286352B1 (en)2025-06-18
US11384432B2 (en)2022-07-12
CN107532297A (en)2018-01-02
EP3286352A4 (en)2019-01-23
WO2016172085A1 (en)2016-10-27
IL284142B2 (en)2024-04-01
US20210246552A1 (en)2021-08-12
IL254759B2 (en)2023-05-01
IL254759A (en)2017-12-31
TWI693298B (en)2020-05-11
EP3286352A1 (en)2018-02-28
CN107532297B (en)2021-02-02
US20160312360A1 (en)2016-10-27
KR102631744B1 (en)2024-01-30
TWI722871B (en)2021-03-21
IL284142A (en)2021-07-29
CN112877675A (en)2021-06-01
TW202028525A (en)2020-08-01
KR102640272B1 (en)2024-02-22
CN112877675B (en)2024-03-08

Similar Documents

PublicationPublication DateTitle
IL254759A (en)Atomic layer deposition chamber with funnel-shaped gas dispersion channel and gas distribution plate
ZA201707460B (en)Methods and apparatuses for producing metallic powder material
SG10202102836YA (en)Low volume showerhead with faceplate holes for improved flow uniformity
SG11201702258TA (en)Atomic layer deposition chamber with thermal lid
ZA201904893B (en)Gas diffusion layer
GB201617173D0 (en)Plasma accelerator
PL3193880T3 (en)Inhibiting the transient receptor potential a1 ion channel
SG11201601275UA (en)Apparatuses, systems and methods for providing thermocycler thermal uniformity
GB2530858B (en)Ionisation chamber with temperature-controlled gas feed
SG10201607942YA (en)High-throughput multichamber atomic layer deposition systems and methods
IL248555A0 (en)Methods for characterizing and treating acute myeloid leukemia
LT3134410T (en)Inhibiting the transient receptor potential a1 ion channel
SG11201810530YA (en)Deposition apparatus and physical vapor deposition chamber
SG11201701463XA (en)Atmospheric epitaxial deposition chamber
GB201401952D0 (en)Gas diffusion substrate
EP3169587A4 (en)Methods and systems for mass distribution of supply packs
SG10201507980YA (en)Gas distribution device with actively cooled grid
SG11201701461TA (en)Honeycomb multi-zone gas distribution plate
ZA201801656B (en)Methods of treating multiple myeloma and plasma cell leukemia by t cell therapy
SG10201503808RA (en)Purge devices having micronozzles and operating methods thereof
GB201712762D0 (en)Particle mixture
EP3103139A4 (en)Energy-filtered cold electron devices and methods
GB201610035D0 (en)File distribution by multicast
SI3221037T1 (en)Odorizer device for gas distribution networks
PL3332158T3 (en)Distribution valve

[8]ページ先頭

©2009-2025 Movatter.jp