SG10201607278TA - Semiconductor device and electronic device - Google Patents

Semiconductor device and electronic device

Info

Publication number: SG10201607278TA
Authority: SG; Singapore
Prior art keywords: electronic device; semiconductor device; semiconductor; electronic
Prior art date: 2015-09-18

Semiconductor Energy Lab Co Ltd

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

2016-09-01Application filed by Semiconductor Energy Lab Co LtdfiledCriticalSemiconductor Energy Lab Co Ltd

2017-04-27Publication of SG10201607278TApublicationCriticalpatent/SG10201607278TA/en

Classifications

- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
- H03K19/0008—Arrangements for reducing power consumption
- H03K19/0013—Arrangements for reducing power consumption in field effect transistor circuits
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
- H03K19/003—Modifications for increasing the reliability for protection
- H03K19/00346—Modifications for eliminating interference or parasitic voltages or currents
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the groups H01L21/18 - H01L21/326 or H10D48/04 - H10D48/07
- H01L21/4814—Conductive parts
- H01L21/4821—Flat leads, e.g. lead frames with or without insulating supports
- H01L21/4825—Connection or disconnection of other leads to or from flat leads, e.g. wires, bumps, other flat leads
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the groups H01L21/18 - H01L21/326 or H10D48/04 - H10D48/07
- H01L21/4814—Conductive parts
- H01L21/4821—Flat leads, e.g. lead frames with or without insulating supports
- H01L21/4842—Mechanical treatment, e.g. punching, cutting, deforming, cold welding
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the groups H01L21/18 - H01L21/326 or H10D48/04 - H10D48/07 e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
- H01L21/565—Moulds
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/14—Measuring as part of the manufacturing process for electrical parameters, e.g. resistance, deep-levels, CV, diffusions by electrical means
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
- H01L23/3114—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed the device being a chip scale package, e.g. CSP
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/495—Lead-frames or other flat leads
- H01L23/49503—Lead-frames or other flat leads characterised by the die pad
- H01L23/49513—Lead-frames or other flat leads characterised by the die pad having bonding material between chip and die pad
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/495—Lead-frames or other flat leads
- H01L23/49517—Additional leads
- H01L23/4952—Additional leads the additional leads being a bump or a wire
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/495—Lead-frames or other flat leads
- H01L23/49541—Geometry of the lead-frame
- H01L23/49548—Cross section geometry
- H01L23/49551—Cross section geometry characterised by bent parts
- H01L23/49555—Cross section geometry characterised by bent parts the bent parts being the outer leads
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/544—Marks applied to semiconductor devices or parts, e.g. registration marks, alignment structures, wafer maps
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
- H03K19/02—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
- H03K19/173—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using elementary logic circuits as components
- H03K19/1733—Controllable logic circuits
- H03K19/1735—Controllable logic circuits by wiring, e.g. uncommitted logic arrays
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
- H10D30/6713—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
- H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
- H10D30/6733—Multi-gate TFTs
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
- H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
- H10D30/6733—Multi-gate TFTs
- H10D30/6734—Multi-gate TFTs having gate electrodes arranged on both top and bottom sides of the channel, e.g. dual-gate TFTs
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/674—Thin-film transistors [TFT] characterised by the active materials
- H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
- H10D86/421—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer
- H10D86/423—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer comprising semiconductor materials not belonging to the Group IV, e.g. InGaZnO
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
- H10D86/441—Interconnections, e.g. scanning lines
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
- H10D86/481—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs integrated with passive devices, e.g. auxiliary capacitors
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
- H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
- H01L2223/544—Marks applied to semiconductor devices or parts
- H01L2223/54473—Marks applied to semiconductor devices or parts for use after dicing
- H01L2223/54486—Located on package parts, e.g. encapsulation, leads, package substrate
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B45/00—Circuit arrangements for operating light-emitting diodes [LED]
- H05B45/30—Driver circuits
- H05B45/37—Converter circuits
- H05B45/3725—Switched mode power supply [SMPS]
- H05B45/39—Circuits containing inverter bridges
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
- H10K59/1213—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements the pixel elements being TFTs

Landscapes

Engineering & Computer Science (AREA)
Physics & Mathematics (AREA)
Computer Hardware Design (AREA)
Microelectronics & Electronic Packaging (AREA)
Power Engineering (AREA)
Condensed Matter Physics & Semiconductors (AREA)
General Physics & Mathematics (AREA)
Manufacturing & Machinery (AREA)
Mathematical Physics (AREA)
Computing Systems (AREA)
General Engineering & Computer Science (AREA)
Geometry (AREA)
Thin Film Transistor (AREA)
Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Electroluminescent Light Sources (AREA)
Control Of Indicators Other Than Cathode Ray Tubes (AREA)
Control Of El Displays (AREA)
Liquid Crystal Display Device Control (AREA)
Shift Register Type Memory (AREA)

SG10201607278TA2015-09-182016-09-01Semiconductor device and electronic deviceSG10201607278TA (en)

Applications Claiming Priority (2)

Application Number	Priority Date	Filing Date	Title
JP2015185539		2015-09-18
JP2015187874		2015-09-25

Publications (1)

Publication Number	Publication Date
SG10201607278TAtrue SG10201607278TA (en)	2017-04-27

Family

ID=58283054

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
SG10201607278TASG10201607278TA (en)	2015-09-18	2016-09-01	Semiconductor device and electronic device

Country Status (5)

Country	Link
US (1)	US10236387B2 (en)
JP (5)	JP6806510B2 (en)
KR (2)	KR102647216B1 (en)
SG (1)	SG10201607278TA (en)
TW (1)	TWI703824B (en)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US20160358566A1 (en)*	2015-06-08	2016-12-08	Boe Technology Group Co., Ltd.	Shift register unit and driving method thereof, gate driving circuit and display device
US10079602B1 (en)	2017-10-10	2018-09-18	Tacho Holdings, Llc	Unipolar latched logic circuits
US10505540B2 (en)	2017-03-08	2019-12-10	Tacho Holdings, Llc	Unipolar logic circuits
US11228315B2 (en)	2017-10-10	2022-01-18	Tacho Holdings, Llc	Three-dimensional logic circuit
US10727835B2 (en)	2017-10-10	2020-07-28	Tacho Holdings, Llc	Three-dimensional logic circuit
US11750191B2 (en)	2017-10-10	2023-09-05	Tacho Holdings, Llc	Three-dimensional logic circuit
US11515873B2 (en)	2018-06-29	2022-11-29	Semiconductor Energy Laboratory Co., Ltd.	Semiconductor device and electronic device
US10825744B2 (en)*	2018-09-20	2020-11-03	Nanya Technology Corporation	Semiconductor structure and manufacturing method thereof
US11410257B2 (en)*	2019-01-08	2022-08-09	Rauland-Borg Corporation	Message boards
KR20220116481A (en)	2019-12-13	2022-08-23	가부시키가이샤 한도오따이 에네루기 켄큐쇼	Semiconductor devices, display devices, and electronic devices
US20230156920A1 (en)*	2020-03-10	2023-05-18	Lumileds Llc	Method Of Manufacturing An Augmented LED Array Assembly
KR20210138826A (en)	2020-05-12	2021-11-22	삼성디스플레이 주식회사	Display device and method of fabricating the same
KR102819862B1 (en)	2020-05-15	2025-06-12	삼성디스플레이 주식회사	Display device and method of fabricating the same
US11699391B2 (en)	2021-05-13	2023-07-11	Semiconductor Energy Laboratory Co., Ltd.	Semiconductor device, display apparatus, and electronic device
DE102022127718A1 (en)*	2022-10-20	2024-04-25	Infineon Technologies Ag	Semiconductor devices with embedded filler particles and related manufacturing processes
WO2024190449A1 (en)*	2023-03-16	2024-09-19	株式会社ジャパンディスプレイ	Semiconductor device

Family Cites Families (117)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPS5483759A (en)*	1977-12-17	1979-07-04	Toshiba Corp	Mos inverter circuit
JPS60198861A (en)	1984-03-23	1985-10-08	Fujitsu Ltd	Thin film transistor
JPS639117A (en)	1986-06-30	1988-01-14	Matsushita Electric Ind Co Ltd	Semiconductor thin-film forming device
JPH0244258B2 (en)	1987-02-24	1990-10-03	Kagaku Gijutsucho Mukizaishitsu Kenkyushocho	INGAZN3O6DESHIMESARERUROTSUHOSHOKEINOSOJOKOZOOJUSURUKAGOBUTSUOYOBISONOSEIZOHO
JPH0244260B2 (en)	1987-02-24	1990-10-03	Kagaku Gijutsucho Mukizaishitsu Kenkyushocho	INGAZN5O8DESHIMESARERUROTSUHOSHOKEINOSOJOKOZOOJUSURUKAGOBUTSUOYOBISONOSEIZOHO
JPS63210023A (en)	1987-02-24	1988-08-31	Natl Inst For Res In Inorg Mater	Compound having a hexagonal layered structure represented by InGaZn↓4O↓7 and its manufacturing method
JPH0244262B2 (en)	1987-02-27	1990-10-03	Kagaku Gijutsucho Mukizaishitsu Kenkyushocho	INGAZN6O9DESHIMESARERUROTSUHOSHOKEINOSOJOKOZOOJUSURUKAGOBUTSUOYOBISONOSEIZOHO
JPH0244263B2 (en)	1987-04-22	1990-10-03	Kagaku Gijutsucho Mukizaishitsu Kenkyushocho	INGAZN7O10DESHIMESARERUROTSUHOSHOKEINOSOJOKOZOOJUSURUKAGOBUTSUOYOBISONOSEIZOHO
JP3182917B2 (en)*	1992-09-25	2001-07-03	富士通株式会社	Negative voltage bias circuit and semiconductor memory device
JPH05251705A (en)	1992-03-04	1993-09-28	Fuji Xerox Co Ltd	Thin-film transistor
JP3479375B2 (en)	1995-03-27	2003-12-15	科学技術振興事業団	Metal oxide semiconductor device in which a pn junction is formed with a thin film transistor made of a metal oxide semiconductor such as cuprous oxide, and methods for manufacturing the same
KR100394896B1 (en)	1995-08-03	2003-11-28	코닌클리케 필립스 일렉트로닉스 엔.브이.	A semiconductor device including a transparent switching element
JP3625598B2 (en)	1995-12-30	2005-03-02	三星電子株式会社	Manufacturing method of liquid crystal display device
US5786724A (en)*	1996-12-17	1998-07-28	Texas Instruments Incorporated	Control of body effect in MOS transistors by switching source-to-body bias
JP4170454B2 (en)	1998-07-24	2008-10-22	Ｈｏｙａ株式会社	Article having transparent conductive oxide thin film and method for producing the same
JP2000150861A (en)	1998-11-16	2000-05-30	Tdk Corp	Oxide thin film
JP3276930B2 (en)	1998-11-17	2002-04-22	科学技術振興事業団	Transistor and semiconductor device
TW460731B (en)	1999-09-03	2001-10-21	Ind Tech Res Inst	Electrode structure and production method of wide viewing angle LCD
JP4089858B2 (en)	2000-09-01	2008-05-28	国立大学法人東北大学	Semiconductor device
KR20020038482A (en)	2000-11-15	2002-05-23	모리시타 요이찌	Thin film transistor array, method for producing the same, and display panel using the same
JP3997731B2 (en)	2001-03-19	2007-10-24	富士ゼロックス株式会社	Method for forming a crystalline semiconductor thin film on a substrate
JP2002289859A (en)	2001-03-23	2002-10-04	Minolta Co Ltd	Thin film transistor
JP4785271B2 (en)	2001-04-27	2011-10-05	株式会社半導体エネルギー研究所	Liquid crystal display device, electronic equipment
JP5147150B2 (en)	2001-07-16	2013-02-20	株式会社半導体エネルギー研究所	LIGHT EMITTING DEVICE AND ELECTRONIC DEVICE
JP3925839B2 (en)	2001-09-10	2007-06-06	シャープ株式会社	Semiconductor memory device and test method thereof
JP4090716B2 (en)	2001-09-10	2008-05-28	雅司川崎	Thin film transistor and matrix display device
JP4164562B2 (en)	2002-09-11	2008-10-15	独立行政法人科学技術振興機構	Transparent thin film field effect transistor using homologous thin film as active layer
WO2003040441A1 (en)	2001-11-05	2003-05-15	Japan Science And Technology Agency	Natural superlattice homologous single crystal thin film, method for preparation thereof, and device using said single crystal thin film
JP4083486B2 (en)	2002-02-21	2008-04-30	独立行政法人科学技術振興機構	Method for producing LnCuO (S, Se, Te) single crystal thin film
CN1445821A (en)	2002-03-15	2003-10-01	三洋电机株式会社	Forming method of ZnO film and ZnO semiconductor layer, semiconductor element and manufacturing method thereof
JP3933591B2 (en)	2002-03-26	2007-06-20	淳二城戸	Organic electroluminescent device
US7339187B2 (en)	2002-05-21	2008-03-04	State Of Oregon Acting By And Through The Oregon State Board Of Higher Education On Behalf Of Oregon State University	Transistor structures
JP2004022625A (en)	2002-06-13	2004-01-22	Murata Mfg Co Ltd	Semiconductor device and method of manufacturing the semiconductor device
US7105868B2 (en)	2002-06-24	2006-09-12	Cermet, Inc.	High-electron mobility transistor with zinc oxide
US7067843B2 (en)	2002-10-11	2006-06-27	E. I. Du Pont De Nemours And Company	Transparent oxide semiconductor thin film transistors
JP4166105B2 (en)	2003-03-06	2008-10-15	シャープ株式会社	Semiconductor device and manufacturing method thereof
JP2004273732A (en)	2003-03-07	2004-09-30	Sharp Corp	Active matrix substrate and manufacturing method thereof
JP4108633B2 (en)	2003-06-20	2008-06-25	シャープ株式会社	THIN FILM TRANSISTOR, MANUFACTURING METHOD THEREOF, AND ELECTRONIC DEVICE
US7262463B2 (en)	2003-07-25	2007-08-28	Hewlett-Packard Development Company, L.P.	Transistor including a deposited channel region having a doped portion
JP4321266B2 (en)	2003-10-16	2009-08-26	ソニー株式会社	Inverter circuit and display device
CN1998087B (en)	2004-03-12	2014-12-31	独立行政法人科学技术振兴机构	Amorphous oxide and thin film transistor
US7145174B2 (en)	2004-03-12	2006-12-05	Hewlett-Packard Development Company, Lp.	Semiconductor device
US7282782B2 (en)	2004-03-12	2007-10-16	Hewlett-Packard Development Company, L.P.	Combined binary oxide semiconductor device
US7297977B2 (en)	2004-03-12	2007-11-20	Hewlett-Packard Development Company, L.P.	Semiconductor device
US7211825B2 (en)	2004-06-14	2007-05-01	Yi-Chi Shih	Indium oxide-based thin film transistors and circuits
JP2006100760A (en)	2004-09-02	2006-04-13	Casio Comput Co Ltd	Thin film transistor and manufacturing method thereof
US7285501B2 (en)	2004-09-17	2007-10-23	Hewlett-Packard Development Company, L.P.	Method of forming a solution processed device
US7298084B2 (en)	2004-11-02	2007-11-20	3M Innovative Properties Company	Methods and displays utilizing integrated zinc oxide row and column drivers in conjunction with organic light emitting diodes
EP2453481B1 (en)	2004-11-10	2017-01-11	Canon Kabushiki Kaisha	Field effect transistor with amorphous oxide
US7453065B2 (en)	2004-11-10	2008-11-18	Canon Kabushiki Kaisha	Sensor and image pickup device
US7829444B2 (en)	2004-11-10	2010-11-09	Canon Kabushiki Kaisha	Field effect transistor manufacturing method
KR100953596B1 (en)	2004-11-10	2010-04-21	캐논 가부시끼가이샤	Light emitting device
US7863611B2 (en)	2004-11-10	2011-01-04	Canon Kabushiki Kaisha	Integrated circuits utilizing amorphous oxides
AU2005302964B2 (en)	2004-11-10	2010-11-04	Canon Kabushiki Kaisha	Field effect transistor employing an amorphous oxide
US7791072B2 (en)	2004-11-10	2010-09-07	Canon Kabushiki Kaisha	Display
US7579224B2 (en)	2005-01-21	2009-08-25	Semiconductor Energy Laboratory Co., Ltd.	Method for manufacturing a thin film semiconductor device
JP4643996B2 (en)*	2005-01-24	2011-03-02	ルネサスエレクトロニクス株式会社	Charge pump circuit and boosting method thereof
TWI445178B (en)	2005-01-28	2014-07-11	Semiconductor Energy Lab	Semiconductor device, electronic device, and method of manufacturing semiconductor device
TWI505473B (en)	2005-01-28	2015-10-21	Semiconductor Energy Lab	Semiconductor device, electronic device, and method of manufacturing semiconductor device
US7858451B2 (en)	2005-02-03	2010-12-28	Semiconductor Energy Laboratory Co., Ltd.	Electronic device, semiconductor device and manufacturing method thereof
US7948171B2 (en)	2005-02-18	2011-05-24	Semiconductor Energy Laboratory Co., Ltd.	Light emitting device
US20060197092A1 (en)	2005-03-03	2006-09-07	Randy Hoffman	System and method for forming conductive material on a substrate
US8681077B2 (en)	2005-03-18	2014-03-25	Semiconductor Energy Laboratory Co., Ltd.	Semiconductor device, and display device, driving method and electronic apparatus thereof
US7544967B2 (en)	2005-03-28	2009-06-09	Massachusetts Institute Of Technology	Low voltage flexible organic/transparent transistor for selective gas sensing, photodetecting and CMOS device applications
US7645478B2 (en)	2005-03-31	2010-01-12	3M Innovative Properties Company	Methods of making displays
US8300031B2 (en)*	2005-04-20	2012-10-30	Semiconductor Energy Laboratory Co., Ltd.	Semiconductor device comprising transistor having gate and drain connected through a current-voltage conversion element
JP2006344849A (en)	2005-06-10	2006-12-21	Casio Comput Co Ltd	Thin film transistor
US7402506B2 (en)	2005-06-16	2008-07-22	Eastman Kodak Company	Methods of making thin film transistors comprising zinc-oxide-based semiconductor materials and transistors made thereby
US7691666B2 (en)	2005-06-16	2010-04-06	Eastman Kodak Company	Methods of making thin film transistors comprising zinc-oxide-based semiconductor materials and transistors made thereby
US7507618B2 (en)	2005-06-27	2009-03-24	3M Innovative Properties Company	Method for making electronic devices using metal oxide nanoparticles
KR100711890B1 (en)	2005-07-28	2007-04-25	삼성에스디아이 주식회사	OLED display and manufacturing method thereof
JP2007059128A (en)	2005-08-23	2007-03-08	Canon Inc	Organic EL display device and manufacturing method thereof
JP2007073705A (en)	2005-09-06	2007-03-22	Canon Inc	Oxide semiconductor channel thin film transistor and method for manufacturing the same
JP5116225B2 (en)	2005-09-06	2013-01-09	キヤノン株式会社	Manufacturing method of oxide semiconductor device
JP4850457B2 (en)	2005-09-06	2012-01-11	キヤノン株式会社	Thin film transistor and thin film diode
JP4280736B2 (en)	2005-09-06	2009-06-17	キヤノン株式会社	Semiconductor element
JP2009509449A (en)*	2005-09-20	2009-03-05	エヌエックスピービーヴィ	Single threshold, single conductivity type logic circuit
EP1770788A3 (en)	2005-09-29	2011-09-21	Semiconductor Energy Laboratory Co., Ltd.	Semiconductor device having oxide semiconductor layer and manufacturing method thereof
JP5037808B2 (en)	2005-10-20	2012-10-03	キヤノン株式会社	Field effect transistor using amorphous oxide, and display device using the transistor
CN101577231B (en)	2005-11-15	2013-01-02	株式会社半导体能源研究所	Semiconductor device and method of manufacturing the same
TWI292281B (en)	2005-12-29	2008-01-01	Ind Tech Res Inst	Pixel structure of active organic light emitting diode and method of fabricating the same
US7867636B2 (en)	2006-01-11	2011-01-11	Murata Manufacturing Co., Ltd.	Transparent conductive film and method for manufacturing the same
JP4977478B2 (en)	2006-01-21	2012-07-18	三星電子株式会社	ZnO film and method of manufacturing TFT using the same
US7576394B2 (en)	2006-02-02	2009-08-18	Kochi Industrial Promotion Center	Thin film transistor including low resistance conductive thin films and manufacturing method thereof
US7977169B2 (en)	2006-02-15	2011-07-12	Kochi Industrial Promotion Center	Semiconductor device including active layer made of zinc oxide with controlled orientations and manufacturing method thereof
KR20070101595A (en)	2006-04-11	2007-10-17	삼성전자주식회사	ＺｎＯＴＦＴ
US20070252928A1 (en)	2006-04-28	2007-11-01	Toppan Printing Co., Ltd.	Structure, transmission type liquid crystal display, reflection type display and manufacturing method thereof
JP5028033B2 (en)	2006-06-13	2012-09-19	キヤノン株式会社	Oxide semiconductor film dry etching method
JP4999400B2 (en)	2006-08-09	2012-08-15	キヤノン株式会社	Oxide semiconductor film dry etching method
JP4609797B2 (en)	2006-08-09	2011-01-12	Ｎｅｃ液晶テクノロジー株式会社	Thin film device and manufacturing method thereof
JP4332545B2 (en)	2006-09-15	2009-09-16	キヤノン株式会社	Field effect transistor and manufacturing method thereof
JP4274219B2 (en)	2006-09-27	2009-06-03	セイコーエプソン株式会社	Electronic devices, organic electroluminescence devices, organic thin film semiconductor devices
JP5164357B2 (en)	2006-09-27	2013-03-21	キヤノン株式会社	Semiconductor device and manufacturing method of semiconductor device
US7622371B2 (en)	2006-10-10	2009-11-24	Hewlett-Packard Development Company, L.P.	Fused nanocrystal thin film semiconductor and method
US7772021B2 (en)	2006-11-29	2010-08-10	Samsung Electronics Co., Ltd.	Flat panel displays comprising a thin-film transistor having a semiconductive oxide in its channel and methods of fabricating the same for use in flat panel displays
JP2008140684A (en)	2006-12-04	2008-06-19	Toppan Printing Co Ltd	Color EL display and manufacturing method thereof
KR20080053599A (en)	2006-12-11	2008-06-16	삼성전자주식회사	Liquid crystal display
KR101303578B1 (en)	2007-01-05	2013-09-09	삼성전자주식회사	Etching method of thin film
US8207063B2 (en)	2007-01-26	2012-06-26	Eastman Kodak Company	Process for atomic layer deposition
KR100851215B1 (en)	2007-03-14	2008-08-07	삼성에스디아이 주식회사	Thin film transistor and organic light emitting display device using same
US7795613B2 (en)	2007-04-17	2010-09-14	Toppan Printing Co., Ltd.	Structure with transistor
KR101325053B1 (en)	2007-04-18	2013-11-05	삼성디스플레이 주식회사	Thin film transistor substrate and manufacturing method thereof
KR20080094300A (en)	2007-04-19	2008-10-23	삼성전자주식회사	Thin film transistors and methods of manufacturing the same and flat panel displays comprising thin film transistors
KR101334181B1 (en)	2007-04-20	2013-11-28	삼성전자주식회사	Thin Film Transistor having selectively crystallized channel layer and method of manufacturing the same
CN101663762B (en)	2007-04-25	2011-09-21	佳能株式会社	Oxynitride semiconductor
KR101345376B1 (en)	2007-05-29	2013-12-24	삼성전자주식회사	Fabrication method of ZnO family Thin film transistor
JP2009094927A (en)*	2007-10-11	2009-04-30	Seiko Epson Corp	Buffer, level shift circuit and display device
US8202365B2 (en)	2007-12-17	2012-06-19	Fujifilm Corporation	Process for producing oriented inorganic crystalline film, and semiconductor device using the oriented inorganic crystalline film
JP2009260832A (en)	2008-04-18	2009-11-05	Toshiba Corp	Semiconductor device
JP4623179B2 (en)	2008-09-18	2011-02-02	ソニー株式会社	Thin film transistor and manufacturing method thereof
JP5451280B2 (en)	2008-10-09	2014-03-26	キヤノン株式会社	Wurtzite crystal growth substrate, manufacturing method thereof, and semiconductor device
KR101631454B1 (en)*	2008-10-31	2016-06-17	가부시키가이샤 한도오따이 에네루기 켄큐쇼	Logic circuit
KR102400984B1 (en)*	2008-11-28	2022-05-24	가부시키가이샤 한도오따이 에네루기 켄큐쇼	Semiconductor device, display device and electronic device including the same
CN107947763B (en)	2010-08-06	2021-12-28	株式会社半导体能源研究所	Semiconductor integrated circuit having a plurality of transistors
JP6116149B2 (en)*	2011-08-24	2017-04-19	株式会社半導体エネルギー研究所	Semiconductor device
US8988152B2 (en)*	2012-02-29	2015-03-24	Semiconductor Energy Laboratory Co., Ltd.	Semiconductor device
JP5980538B2 (en)*	2012-03-29	2016-08-31	株式会社半導体エネルギー研究所	Semiconductor device

2016
- 2016-09-01SGSG10201607278TApatent/SG10201607278TA/enunknown
- 2016-09-06KRKR1020160114356Apatent/KR102647216B1/enactiveActive
- 2016-09-12USUS15/262,660patent/US10236387B2/ennot_activeExpired - Fee Related
- 2016-09-13TWTW105129873Apatent/TWI703824B/ennot_activeIP Right Cessation
- 2016-09-16JPJP2016181353Apatent/JP6806510B2/enactiveActive
2020
- 2020-12-04JPJP2020201535Apatent/JP7026759B2/enactiveActive
2022
- 2022-02-15JPJP2022021047Apatent/JP7364715B2/enactiveActive
2023
- 2023-10-05JPJP2023173539Apatent/JP7661436B2/enactiveActive
2024
- 2024-03-08KRKR1020240033084Apatent/KR20240037209A/enactivePending
2025
- 2025-04-02JPJP2025060929Apatent/JP2025096337A/enactivePending

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JP2021052195A (en)	2021-04-01
KR20170034318A (en)	2017-03-28
JP2022069455A (en)	2022-05-11
US10236387B2 (en)	2019-03-19
JP7661436B2 (en)	2025-04-14
JP2017076782A (en)	2017-04-20
TW201729541A (en)	2017-08-16
JP2023181212A (en)	2023-12-21
KR20240037209A (en)	2024-03-21
JP7364715B2 (en)	2023-10-18
TWI703824B (en)	2020-09-01
JP6806510B2 (en)	2021-01-06
KR102647216B1 (en)	2024-03-14
US20170084754A1 (en)	2017-03-23
JP7026759B2 (en)	2022-02-28
JP2025096337A (en)	2025-06-26

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