Movatterモバイル変換


[0]ホーム

URL:


MY164421A - A method of producing vertical nanowires - Google Patents

A method of producing vertical nanowires

Info

Publication number
MY164421A
MY164421AMYPI2012701094AMYPI2012701094AMY164421AMY 164421 AMY164421 AMY 164421AMY PI2012701094 AMYPI2012701094 AMY PI2012701094AMY PI2012701094 AMYPI2012701094 AMY PI2012701094AMY 164421 AMY164421 AMY 164421A
Authority
MY
Malaysia
Prior art keywords
nanowires
gold catalyst
substrate
nitride layer
silicon
Prior art date
Application number
MYPI2012701094A
Inventor
Bien Chia Sheng Daniel
Aun Shih Teh
Wai Yee Lee
Anuar Abd Wahid Khairul
Original Assignee
Mimos Berhad
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mimos BerhadfiledCriticalMimos Berhad
Priority to MYPI2012701094ApriorityCriticalpatent/MY164421A/en
Priority to PCT/MY2013/000227prioritypatent/WO2014088405A1/en
Publication of MY164421ApublicationCriticalpatent/MY164421A/en

Links

Classifications

Landscapes

Abstract

A METHOD OF PRODUCING VERTICAL NANOWIRES USING SINGLE CATALYST MATERIAL IS PROVIDED, THE METHOD INCLUDES THE STEPS OF DEPOSITING AN INSULATING OXIDE OR NITRIDE LAYER (101) ON A SUBSTRATE (105) SURFACE, DEPOSITING A GOLD CATALYST LAYER (103) ON TOP OF THE INSULATING OXIDE OR NITRIDE LAYER (101), ANNEALING THE SUBSTRATE (105) WITH GOLD CATALYST AT TEMPERATURE ABOVE 350°C, SUCH THAT NANOPARTICLES ARE OF DIAMETER IN RANGE OF 1 TO 100 NM, GROWING ZINC OXIDE NANOWIRES FROM EXPOSED GOLD CATALYST BY CHEMICAL VAPOUR DEPOSITION (CVD) WITH DIETHYLZINC AS A PRECURSOR, AND GROWING SILICON NANOWIRES (107) FROM REMAINING GOLD CATALYST NANOPARTICLES WITH SILICON AS PRECURSOR, SUCH THAT VERTICAL TYPE ZINC OXIDE NANOWIRES ARE PRODUCED AND LATERALLY CONNECTED BY SILICON NANOWIRES (107) WHEREIN THE INSULATING OXIDE OR NITRIDE LAYER (101) IS NOT REQUIRED WHEN THE SUBSTRATE (105) IS INSULATIVE MATERIAL. THE MOST ILLUSTRATIVE DRAWING:
MYPI2012701094A2012-12-062012-12-06A method of producing vertical nanowiresMY164421A (en)

Priority Applications (2)

Application NumberPriority DateFiling DateTitle
MYPI2012701094AMY164421A (en)2012-12-062012-12-06A method of producing vertical nanowires
PCT/MY2013/000227WO2014088405A1 (en)2012-12-062013-12-03A method of producing nanowires of two different materials

Applications Claiming Priority (1)

Application NumberPriority DateFiling DateTitle
MYPI2012701094AMY164421A (en)2012-12-062012-12-06A method of producing vertical nanowires

Publications (1)

Publication NumberPublication Date
MY164421Atrue MY164421A (en)2017-12-15

Family

ID=50023817

Family Applications (1)

Application NumberTitlePriority DateFiling Date
MYPI2012701094AMY164421A (en)2012-12-062012-12-06A method of producing vertical nanowires

Country Status (2)

CountryLink
MY (1)MY164421A (en)
WO (1)WO2014088405A1 (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication numberPriority datePublication dateAssigneeTitle
CN114530465A (en)*2020-11-232022-05-24联华电子股份有限公司 Image sensor device and method of making the same
CN114291839B (en)*2022-01-072024-02-02辽宁师范大学Low-cost superfine beta-Ga 2 O 3 Method for preparing nanowire

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication numberPriority datePublication dateAssigneeTitle
CA2572798A1 (en)2004-07-072006-07-27Nanosys, Inc.Systems and methods for harvesting and integrating nanowires
US7608905B2 (en)2006-10-172009-10-27Hewlett-Packard Development Company, L.P.Independently addressable interdigitated nanowires
KR100902512B1 (en)*2007-05-172009-06-15삼성코닝정밀유리 주식회사 Method for growing BaN single crystals on silicon substrate, manufacturing method of BaN-based light emitting devices and BaN-based light emitting devices
US8889455B2 (en)*2009-12-082014-11-18Zena Technologies, Inc.Manufacturing nanowire photo-detector grown on a back-side illuminated image sensor
FR2964982B1 (en)*2010-09-222013-03-08Commissariat Energie Atomique PROCESS FOR REMOVING METAL CATALYST RESIDUES ON SURFACE OF CATALYTICALLY GROWN-WIRE PRODUCTS
MY147415A (en)*2010-11-242012-12-14Mimos BerhadA method for nanowires and nanotubes growth

Also Published As

Publication numberPublication date
WO2014088405A1 (en)2014-06-12

Similar Documents

PublicationPublication DateTitle
Mattinen et al.Atomic layer deposition of emerging 2D semiconductors, HfS2 and ZrS2, for optoelectronics
WO2010151856A3 (en)Chemical vapor deposition process for aluminum silicon nitride
WO2011017598A3 (en)Formation of silicon oxide using non-carbon flowable cvd processes
WO2012002995A3 (en)Thin films and methods of making them using cyclohexasilane
WO2011090592A3 (en)Chemical vapor deposition improvements through radical-component modification
WO2011126748A3 (en)Depositing conformal boron nitride films
Ramachandran et al.Low temperature atomic layer deposition of crystalline In2O3 films
WO2012102809A3 (en)Polysilicon films by hdp-cvd
GB201205801D0 (en)Process
EP2618365A3 (en)Method for depositing a chlorine-free conformal SiN film
WO2011084532A3 (en)Dielectric film formation using inert gas excitation
EP3686920A3 (en)Method of enabling seamless cobalt gap-fill
WO2010080216A3 (en)Precursor addition to silicon oxide cvd for improved low temperature gapfill
WO2012053782A3 (en)Process for growing silicon carbide single crystal and device for the same
WO2011123217A3 (en)Silicon-ozone cvd with reduced pattern loading using incubation period deposition
JP2011146697A5 (en)
Choi et al.SnO2 thin films grown by atomic layer deposition using a novel Sn precursor
EP2560194A4 (en) SEMICONDUCTOR DEVICE OF SILICON CARBIDE AND METHOD FOR MANUFACTURING THE SAME
NZ612583A (en)Gas-barrier plastic molded product and manufacturing process therefor
MY159738A (en)Oxygen containing precursors for photovoltaic passivation
TW201129636A (en)Silicon layers formed from polymer-modified liquid silane formulations
WO2014008453A3 (en)Controlled epitaxial boron nitride growth for graphene based transistors
PH12019500371A1 (en)A method of manufacturing an insulation layer on silicon carbide and a semiconductor device
GB2514711A (en)Power semiconductor device and method for manufacturing thereof
JP2012023350A5 (en)

[8]ページ先頭

©2009-2025 Movatter.jp