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MY132894A - Layered resist system using tunable amorphous carbon film as a bottom layer and methods of fabrication thereof - Google Patents

Layered resist system using tunable amorphous carbon film as a bottom layer and methods of fabrication thereof

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Publication number
MY132894A
MY132894AMYPI98003399AMYPI9803399AMY132894AMY 132894 AMY132894 AMY 132894AMY PI98003399 AMYPI98003399 AMY PI98003399AMY PI9803399 AMYPI9803399 AMY PI9803399AMY 132894 AMY132894 AMY 132894A
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MY
Malaysia
Prior art keywords
films
tunable
bottom layer
amorphous carbon
fabrication
Prior art date
Application number
MYPI98003399A
Inventor
Katherina E Babich
Timothy Allan Brunner
Alessandro Cesare Callegari
Alfred Grill
Christopher V Jahnes
Vishnubhai Vitthalbhai Patel
Original Assignee
Ibm
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by IbmfiledCriticalIbm
Publication of MY132894ApublicationCriticalpatent/MY132894A/en

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Abstract

DISCLOSED IS VAPOR DEPOSITED THICK ARC LAYER AND METHOD OF PREPARING SINGLE AND TUNABLE THICK BOTTOM LAYER COATINGS BASED ON AMORPHOUS CARBON FILMS. THESE FILM CAN BE HYDROGENATED, FLUORINATED, NITROGENATED CARBON FILMS. SUCH FILMS HAVE THE INDEX OF REFRACTION AND THE EXTINCTION COEFFICIENT TUNABLE FROM ABOUT 1.4 TO ABOUT 2.1 AND FROM ABOUT 0.1 TO 0.6, RESPECTIVELY, AT UV AND DUV WAVELENGHTS, IN PARTICULAR 365, 248 AND 193 NM. THIS MAKES THE FILMS EXTREMELY USEFUL TO BE USED AS THICK BOTTOM LAYERS IN A BILAYER RESIST SYSTEM. MOREOVER, THE FILMS PRODUCED BY THE PRESENT INVENTION CAN BE DEPOSITED OVER DEVICE TOPOGRAPHY WITH HIGH CONFORMALITY, AND THEY ARE ETCHABLE BY OXYGEN AND/OR FLUORINE ION ETCH PROCESS. BECAUSE OF THESE UNIQUE PROPERTIES, THESE FILMS CAN BE USED TO FORM A SINGLE OR TUNABLE THICK BOTTOM LAYER AT UV AND DUV WAVELENGHTS TO PRODUCE PRACTICALLY ZERO REFLECTIONS AT THE RESIST/BOTTOM LAYER INTERFACE. THIS GREATLY IMPROVES PERFORMANCES OF SEMICONDUCTORS CHIPS.
MYPI98003399A1997-08-251998-07-24Layered resist system using tunable amorphous carbon film as a bottom layer and methods of fabrication thereofMY132894A (en)

Applications Claiming Priority (1)

Application NumberPriority DateFiling DateTitle
US92447697A1997-08-251997-08-25

Publications (1)

Publication NumberPublication Date
MY132894Atrue MY132894A (en)2007-10-31

Family

ID=25450251

Family Applications (1)

Application NumberTitlePriority DateFiling Date
MYPI98003399AMY132894A (en)1997-08-251998-07-24Layered resist system using tunable amorphous carbon film as a bottom layer and methods of fabrication thereof

Country Status (5)

CountryLink
JP (1)JP3117429B2 (en)
KR (1)KR100301272B1 (en)
MY (1)MY132894A (en)
SG (1)SG74649A1 (en)
TW (1)TW468209B (en)

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US7776516B2 (en)2006-07-182010-08-17Applied Materials, Inc.Graded ARC for high NA and immersion lithography
JP5275085B2 (en)*2009-02-272013-08-28株式会社東芝 Manufacturing method of semiconductor device
WO2010045153A2 (en)*2008-10-142010-04-22Applied Materials, Inc.Method for depositing conformal amorphous carbon film by plasma-enhanced chemical vapor deposition (pecvd)
US8153351B2 (en)*2008-10-212012-04-10Advanced Micro Devices, Inc.Methods for performing photolithography using BARCs having graded optical properties
EP2387735B1 (en)*2009-01-162019-03-13FujiFilm Electronic Materials USA, Inc.Nonpolymeric binders for semiconductor substrate coatings
CN106169415B (en)*2013-05-032020-02-14应用材料公司Optical tunable hard mask for multiple patterning applications
CN117524848A (en)2017-06-082024-02-06应用材料公司High density low Wen Tanmo for hard mask and other patterning applications
SG11202009406RA (en)2018-04-092020-10-29Applied Materials IncCarbon hard masks for patterning applications and methods related thereto
US11603591B2 (en)2018-05-032023-03-14Applied Materials Inc.Pulsed plasma (DC/RF) deposition of high quality C films for patterning
WO2019241402A1 (en)*2018-06-132019-12-19Brewer Science, Inc.Adhesion layers for euv lithography
US11158507B2 (en)2018-06-222021-10-26Applied Materials, Inc.In-situ high power implant to relieve stress of a thin film
KR20250010759A (en)2018-10-262025-01-21어플라이드 머티어리얼스, 인코포레이티드High density carbon films for patterning applications
CN114072898A (en)2019-05-242022-02-18应用材料公司Substrate processing chamber
CN114008761A (en)2019-07-012022-02-01应用材料公司 Tuning membrane properties by optimizing plasmonic coupling materials
WO2021146138A1 (en)*2020-01-152021-07-22Lam Research CorporationUnderlayer for photoresist adhesion and dose reduction
US11664214B2 (en)2020-06-292023-05-30Applied Materials, Inc.Methods for producing high-density, nitrogen-doped carbon films for hardmasks and other patterning applications
US11664226B2 (en)2020-06-292023-05-30Applied Materials, Inc.Methods for producing high-density carbon films for hardmasks and other patterning applications
US11421324B2 (en)2020-10-212022-08-23Applied Materials, Inc.Hardmasks and processes for forming hardmasks by plasma-enhanced chemical vapor deposition

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KR100323442B1 (en)*1994-06-172002-05-13박종섭Method for fabricating semiconductor device
US6428894B1 (en)1997-06-042002-08-06International Business Machines CorporationTunable and removable plasma deposited antireflective coatings

Also Published As

Publication numberPublication date
JPH11150115A (en)1999-06-02
TW468209B (en)2001-12-11
SG74649A1 (en)2000-08-22
JP3117429B2 (en)2000-12-11
KR100301272B1 (en)2001-10-19
KR19990023841A (en)1999-03-25

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