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KR970054309A - Nonvolatile Semiconductor Memory Device - Google Patents

Nonvolatile Semiconductor Memory Device
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Publication number
KR970054309A
KR970054309AKR1019950064417AKR19950064417AKR970054309AKR 970054309 AKR970054309 AKR 970054309AKR 1019950064417 AKR1019950064417 AKR 1019950064417AKR 19950064417 AKR19950064417 AKR 19950064417AKR 970054309 AKR970054309 AKR 970054309A
Authority
KR
South Korea
Prior art keywords
cell
memory device
semiconductor memory
nonvolatile semiconductor
protecting
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
KR1019950064417A
Other languages
Korean (ko)
Inventor
정창호
Original Assignee
김주용
현대전자산업 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 김주용, 현대전자산업 주식회사filedCritical김주용
Priority to KR1019950064417ApriorityCriticalpatent/KR970054309A/en
Priority to GB9626875Aprioritypatent/GB2308738A/en
Publication of KR970054309ApublicationCriticalpatent/KR970054309A/en
Abandonedlegal-statusCriticalCurrent

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Abstract

Translated fromKorean

본 발명은 불휘발성 반도체 메모리장치에 관한 것으로, 외부 노이즈 또는 알파 파티클의 영향을 차단하여 안정적인 동작을 할 수 있도록 한 EEPROM셀 구조에 관한 것이다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a nonvolatile semiconductor memory device, and more particularly, to an EEPROM cell structure capable of stable operation by blocking the influence of external noise or alpha particles.

본 발명은 셀영역 상부에 셀영역을 덮는 형태로 셀을 보호하기 위한 차폐수단이 형성된 것을 특징으로 하는 반도체 메모리장치를 제공함으로써 셀을 외부 손상요인으로부터 차폐구조를 이용하여 보호하여 셀이 안정적으로 동작할 수 있도록 하고, 생산 수율을 향상시킨다.The present invention provides a semiconductor memory device, characterized in that the shielding means for protecting the cell is formed in the form of covering the cell area on the upper cell area by protecting the cell from external damage factors using a shielding structure to operate the cell stably To improve the production yield.

Description

Translated fromKorean
불 휘발성 반도체 메모리장치Nonvolatile Semiconductor Memory Device

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제2도는 본 발명에 의한 EEPROM셀 단면구조도이다.2 is a cross-sectional structure diagram of an EEPROM cell according to the present invention.

Claims (2)

Translated fromKorean
셀영역 상부에 셀영역을 덮는 형태로 셀을 보호하기 위한 차폐수단이 형성된 것을 특징으로 하는 반도체 메모리장치.And a shielding means for protecting the cell in such a manner as to cover the cell region above the cell region.제1항에 있어서, 상기 차폐수단은 접지에 연결되는 금속배선으로 형성되는 것을 특징으로 하는 반도체 메모리장치.The semiconductor memory device of claim 1, wherein the shielding means is formed of a metal wire connected to a ground.※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019950064417A1995-12-291995-12-29 Nonvolatile Semiconductor Memory DeviceAbandonedKR970054309A (en)

Priority Applications (2)

Application NumberPriority DateFiling DateTitle
KR1019950064417AKR970054309A (en)1995-12-291995-12-29 Nonvolatile Semiconductor Memory Device
GB9626875AGB2308738A (en)1995-12-291996-12-24Semiconductor memory device with protective layer

Applications Claiming Priority (1)

Application NumberPriority DateFiling DateTitle
KR1019950064417AKR970054309A (en)1995-12-291995-12-29 Nonvolatile Semiconductor Memory Device

Publications (1)

Publication NumberPublication Date
KR970054309Atrue KR970054309A (en)1997-07-31

Family

ID=19446906

Family Applications (1)

Application NumberTitlePriority DateFiling Date
KR1019950064417AAbandonedKR970054309A (en)1995-12-291995-12-29 Nonvolatile Semiconductor Memory Device

Country Status (2)

CountryLink
KR (1)KR970054309A (en)
GB (1)GB2308738A (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication numberPriority datePublication dateAssigneeTitle
FR2772967B1 (en)*1997-12-182004-01-02Sgs Thomson Microelectronics PROTECTED EEPROM MEMORY CELL

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication numberPriority datePublication dateAssigneeTitle
FR2656156A1 (en)*1989-12-161991-06-21Sgs Thomson Microelectronics FULLY PROTECTED INTEGRATED CIRCUIT FROM ULTRA-PURPLE RAYS.

Also Published As

Publication numberPublication date
GB2308738A (en)1997-07-02
GB9626875D0 (en)1997-02-12

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Legal Events

DateCodeTitleDescription
A201Request for examination
PA0109Patent application

Patent event code:PA01091R01D

Comment text:Patent Application

Patent event date:19951229

PA0201Request for examination

Patent event code:PA02012R01D

Patent event date:19951229

Comment text:Request for Examination of Application

PG1501Laying open of application
E902Notification of reason for refusal
PE0902Notice of grounds for rejection

Comment text:Notification of reason for refusal

Patent event date:19981130

Patent event code:PE09021S01D

PC1902Submission of document of abandonment before decision of registration
SUBMSurrender of laid-open application requested

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