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KR970004461B1 - A method for manufacturing capacitor of semiconductor device - Google Patents

A method for manufacturing capacitor of semiconductor device
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Publication number
KR970004461B1
KR970004461B1KR93017617AKR930017617AKR970004461B1KR 970004461 B1KR970004461 B1KR 970004461B1KR 93017617 AKR93017617 AKR 93017617AKR 930017617 AKR930017617 AKR 930017617AKR 970004461 B1KR970004461 B1KR 970004461B1
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KR
South Korea
Prior art keywords
forming
polysilicon
storage node
pillar
capacitor
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Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR93017617A
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Korean (ko)
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KR950010068A (en
Inventor
Kwan-Koo Na
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Lg Semicon Co Ltd
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Priority to KR93017617ApriorityCriticalpatent/KR970004461B1/en
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Publication of KR970004461B1publicationCriticalpatent/KR970004461B1/en
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Expired - Fee Relatedlegal-statusCriticalCurrent

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Abstract

A fabrication method of cylindrical capacitors is provided to improve cell capacitance using capacitor of double structure. The method comprises the steps of: forming a first polysilicon spacer(223') of at both sidewalls of storage node for connecting a first polysilicon(221) and a second polysilicon(222); forming a contact hole(N2) by etching an oxide layer(123') and a third nitride layer(213); depositing a fist polysilicon storage node(231) and forming a pillar pattern(26') by etching a pillar oxide(26); depositing a second polysilicon storage node(232) and forming a second polysilicon spacer(232') at both sidewalls of the pillar; and forming a dielectric layer(28) and a plate electrode(29). Thereby, it is possible to maximize the effective surface area of capacitor by forming double-storage node pattern.
KR93017617A1993-09-031993-09-03A method for manufacturing capacitor of semiconductor deviceExpired - Fee RelatedKR970004461B1 (en)

Priority Applications (1)

Application NumberPriority DateFiling DateTitle
KR93017617AKR970004461B1 (en)1993-09-031993-09-03A method for manufacturing capacitor of semiconductor device

Applications Claiming Priority (1)

Application NumberPriority DateFiling DateTitle
KR93017617AKR970004461B1 (en)1993-09-031993-09-03A method for manufacturing capacitor of semiconductor device

Publications (2)

Publication NumberPublication Date
KR950010068A KR950010068A (en)1995-04-26
KR970004461B1true KR970004461B1 (en)1997-03-27

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ID=19362825

Family Applications (1)

Application NumberTitlePriority DateFiling Date
KR93017617AExpired - Fee RelatedKR970004461B1 (en)1993-09-031993-09-03A method for manufacturing capacitor of semiconductor device

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KR (1)KR970004461B1 (en)

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Publication numberPublication date
KR950010068A (en)1995-04-26

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