제1도는 통상적인 고출력트랜지스터 패키지의 정면도.1 is a front view of a typical high power transistor package.
제2도는 장착나사로 종래의 구조를 갖는 고출력 트랜지스터 패키지를 외부 방열판에 고착시킨 경우에 있어서의 측단면도.Fig. 2 is a side sectional view in the case where a high output transistor package having a conventional structure is fixed to an external heat sink with a mounting screw.
제3도는 본 고안에 따른 고출력 트랜지스터의 패키지구조를 예시한 측단면도이다.3 is a side cross-sectional view illustrating a package structure of a high output transistor according to the present invention.
* 도면의 주요 부분에 대한 부호의 설명* Explanation of symbols for the main parts of the drawings
1 : 수지성형물 2 : 리이드1: resin molding 2: lead
3 : 방열판 3' : 리드프레임3: heat sink 3 ': lead frame
4 : 나사삽입홈 5 : 운모판4: screw insertion groove 5: mica plate
6 : 외부방열판 7 : 볼트6: external heat sink 7: bolt
9 : 넛트 8, 10 : 절연와셔9: Nut 8, 10: Insulation Washer
본 고안은 고출력 트랜지스터의 패키지(Package)구조에 관한 것으로서, 더욱 상세하게는 상기의 패키지가 외부 방열판에 고정시켜 사용될 때 전극간의 고전압에 의해 스파크 현상을 방지해주는 고출력 트랜지스터 패키지의 구조에 관한 것이다.The present invention relates to a package structure of a high output transistor, and more particularly to a structure of a high output transistor package that prevents the spark phenomenon due to the high voltage between the electrodes when the package is fixed to the external heat sink.
통상, 고출력 트랜지스터는 제1도에 도시되어 있는 바와 같이 반도체 페렛(Pallet)을 봉합하는 수지성형물(1)과 리이드(2) 및 방열판(3)등으로 구성되는 진공관을 대신하는 고출력, 고전압용 트랜지스터로서, 고전압으로 동작되기 때문에 전극간의 절연기술이 특히 요구되고 있다.In general, a high output transistor is a high output, high voltage transistor that replaces a vacuum tube composed of a resin molded part 1, a lead 2, a heat sink 3, etc., which seal a semiconductor pallet, as shown in FIG. In particular, the insulating technology between the electrodes is particularly required because it is operated at a high voltage.
상기의 절연이 전극간에 완벽하게 이루어지지 않았을 경우, 고전압으로 인한 스파크 현상으로 인접되어 있는 부품 및 소자에 치명적인 영향을 주는 경향이 있는 것이다.If the above insulation is not completely made between the electrodes, there is a tendency to have a fatal effect on the adjacent parts and devices due to the spark phenomenon due to high voltage.
제1도에서 미설명 부호 4는 나사삽입홈으로서 나사로 외부방열판과의 결합을 위해 형성된 것이다.In FIG. 1, reference numeral 4 is a screw insertion groove, which is formed for coupling with an external heat sink with a screw.
스파크 현상이란 전극간에 제공되는 고전압이 공기를 통하여 전류가 흐르는 현상으로서, 고출력 트랜지스터는 인접한 전극들이 공기중에 노출되지 않도록 하여 상기의 현상이 방지되어야 한다.The spark phenomenon is a phenomenon in which a high voltage provided between electrodes flows current through air, and the high output transistor should prevent adjacent electrodes from being exposed to the air, thereby preventing the above phenomenon.
종래의 패키지 구조를 갖는 고출력 트랜지스터의 패키지는, 제2도에 도시되어 있는 바와같이, 방열판의 기능을 갖는 특정부분 리드프레임(3')의 접촉면에 운모판(5) 및 외부 방열판(6)을 적층시키고, 장착볼트(7)가 고출력 트랜지스터 패키지, 운모판(5) 및 외부방열간(6)을 관통하는 삽입홈(4)을 통하여 넛트(9)와 결합되어 있으며, 외부방열판(6)에 상기 볼트(7)와 넛트(9)와의 절연을 위한 절연와셔(8)가 고착되어 있는 구조로 되어 있다.In a package of a high output transistor having a conventional package structure, as shown in FIG. 2, a mica plate 5 and an external heat sink 6 are provided on a contact surface of a specific part lead frame 3 'having a function of a heat sink. The mounting bolt (7) is coupled to the nut (9) through an insertion groove (4) through the high output transistor package, the mica plate (5) and the outer heat dissipation gap (6), and to the outer heat sink (6). The insulating washer 8 for fixing the bolt 7 and the nut 9 is fixed.
또한, 이러한 구조의 종래의 패키지는 수지성형물(1)이 리드 프레임(3')과 장착볼트(7)와의 절연이 되는 부분에서 소정두께로 형성된 구조를 갖는다.In addition, the conventional package having such a structure has a structure in which the resin molded article 1 is formed to a predetermined thickness at a portion that is insulated from the lead frame 3 'and the mounting bolt 7.
상기 구조의 패키지를 장착볼트(7) 및 넛트(9)로 운모판(5) 및 외부방열판(6)과 결합시킬 때, 볼트(7)의 회전에 의해 운모판(5)이 볼트(7)에 접촉되는 부분 및 그 주위에서 수지 성형물(1)과 운모판(5)이 파손되는 경우가 있어 리드프레임(3') 및 외부방열판(6)이 공기에 노출되는 문제가 있었다.When the package having the above structure is combined with the mica plate 5 and the external heat sink 6 with the mounting bolt 7 and the nut 9, the mica plate 5 is rotated by the bolt 7. The resin molded part 1 and the mica board 5 may be damaged in the part contacting with and around it, and the lead frame 3 'and the external heat sink 6 are exposed to air.
고출력 트랜지스터의 패키지에 있어서 리드프레임(3')은 통상 콜렉터(Collector)기능을 갖고, 외부방열판(6)은 접지(ground)되어 있기 때문에 모두 전극으로서의 기능을 수행하게 된다.In the package of the high output transistor, the lead frame 3 'normally has a collector function, and since the external heat sink 6 is grounded, all of them function as electrodes.
따라서, 종래의 패키지는 볼트(7)에 접속되는 부분에서 운모판(5)은 재질상 외부충격에 의해 파손이 쉽고, 리드프레임(3')과 볼트(7) 사이에 형성되어 있는 수지성형물(1)의 두깨가 얇기 때문에 언급한 바와같이 볼트에 의해 파손의 위험이 항상 내재하고 있어서, 이러한 점이 스파크 현상이 야기되는 요인으로 작용하는 것이다.Therefore, in the conventional package, the mica plate 5 is easily damaged due to external impact at the portion connected to the bolt 7, and is formed between the resin frame formed between the lead frame 3 'and the bolt 7 ( Because of the thin thickness of 1), as mentioned above, the risk of breakage is always inherent by bolts, which is why sparking occurs.
따라서, 본 고안의 목적은, 상기한 문제를 해결하기 위한 것으로서, 충격에 강한 재질로 되어 있는 절연와셔를 장방향으로 확장하여 장착용 볼트에 의해 운모판 및 수지성형물이 파손되지 않도록 한 고출력 트랜지스터 페키지를 제공하는 데 있다.Accordingly, an object of the present invention is to solve the above-mentioned problem, and a high-power transistor package in which an insulating washer made of a material resistant to impact is extended in the longitudinal direction so that the mica plate and the resin molding are not damaged by the mounting bolt. To provide.
상기의 목적을 달성하기 위한 본 고안의 기술적 수단은 장착용 볼트와 넛트를 외부방열판과 절연되도록 하는 절연와셔를 장방향 즉, 볼트삽입홈의 축방향으로 확장하여서, 절연와셔가 리드프레임과 볼트사이에 형성되어있는 수지성형물의 일정 높이까지 형성된 구조를 특징으로 한다.The technical means of the present invention for achieving the above object is to extend the insulating washer to insulate the mounting bolt and the nut from the external heat sink in the longitudinal direction, that is, the axial direction of the bolt insertion groove, so that the insulating washer between the lead frame and the bolt Characterized in that the structure formed to a certain height of the resin molding formed in.
이하 첨부된 제3도에 따라 본 고안의 실시예를 상세히 설명한댜.Hereinafter, an embodiment of the present invention in detail according to the attached FIG.
본 고안에 따른 고출력 트랜지스터 패키지를 외부방열판과 고착시킨 구조에 있어서 종래의 구조와 동일한 부분에 대해서는 동일한 부호를 지칭한다.In the structure in which the high output transistor package according to the present invention is fixed to an external heat sink, the same reference numerals refer to the same parts as in the conventional structure.
즉, 볼트(7)를 패키지의 삽입홈(4)에 끼워서 패키지와 운모판(5) 및 외부방열판(6)을 넛트(9)로 고정시키는 수단은 종래와 동일하고, 다만 종래에는 외부 방열판(6)에 관통된 삽입홈 높이만큼만 형성되어 있던 절연와셔(10)를 본 고안에서는 리드프레임(3')과 볼트(7)사이에 형성된 수지성형물(1)의 일정 높이까지 장방향으로 확장된 절연와셔(10)와, 이 와셔(10)가 운모판(5) 및 일정 높이의 수지성형물(1)까지 끼워지도록 상기 리드프레임(3')의 삽입홈 방향에 있는 수지성형물(1)에 외부방열판(6)의 홈 직경과 일치하는 홈이 형성된 구조로 되어있다.That is, the means for inserting the bolt 7 into the insertion groove 4 of the package to fix the package, the mica plate 5 and the outer heat dissipation plate 6 with the nut 9 is the same as in the prior art, but conventionally the external heat sink ( Insulation washer 10 formed only the height of the insertion groove penetrated through 6) in the present invention is extended in the longitudinal direction to a predetermined height of the resin molding (1) formed between the lead frame (3 ') and the bolt (7) An external heat sink on the washer 10 and the resin molded part 1 in the direction of the insertion groove of the lead frame 3 'such that the washer 10 is fitted to the mica plate 5 and the resin molded part 1 of a predetermined height. It has a structure in which a groove matching the groove diameter of (6) is formed.
따라서, 고출력 트랜지스터의 패키지 운모판(5) 및 외부방열판(6)을 고착시킬 때 사용되는 장착용 볼트(7)의 회전에 따라 발생되는 마찰로부터 상기의 절연와셔(10)가 리드프레임(3')의 축방향에 형성된 수지성형물(1)과 운모판(5) 및 외부방열판(6)을 보호할 수 있기 때문에 고출력 트랜지스터 패키지의 리드프레임(3')과 외부방열판(6)을 공기로부터 노출되는 것을 방지할 수 있다.Therefore, the above-mentioned insulation washer 10 is prevented from the friction generated by the rotation of the mounting bolt 7 used to fix the package mica plate 5 and the external heat sink 6 of the high output transistor. Since the resin molded part 1, the mica plate 5, and the external heat sink 6 formed in the axial direction can be protected, the lead frame 3 'and the external heat sink 6 of the high output transistor package are exposed from air. Can be prevented.
이상에서 설명한 바와같이 본원 고안에 의하면 고출력 트랜지스터 패키지를 외부 방열판과 고착시킬 때 전극으로 작용하는 리드프레임과 외부방열판이 함께 공기에 노출되지 않도록 할 수 있어 스파크 현상을 방지할수 있는 이점이 있다.As described above, according to the present invention, when the high output transistor package is fixed to the external heat sink, the lead frame and the external heat sink serving as electrodes can be prevented from being exposed to the air, thereby preventing the spark phenomenon.
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR2019890015311UKR940008294Y1 (en) | 1989-10-20 | 1989-10-20 | Package Structure of High Power Transistor |
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR2019890015311UKR940008294Y1 (en) | 1989-10-20 | 1989-10-20 | Package Structure of High Power Transistor |
| Publication Number | Publication Date |
|---|---|
| KR910008007U KR910008007U (en) | 1991-05-31 |
| KR940008294Y1true KR940008294Y1 (en) | 1994-12-08 |
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR2019890015311UExpired - Fee RelatedKR940008294Y1 (en) | 1989-10-20 | 1989-10-20 | Package Structure of High Power Transistor |
| Country | Link |
|---|---|
| KR (1) | KR940008294Y1 (en) |
| Publication number | Publication date |
|---|---|
| KR910008007U (en) | 1991-05-31 |
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