Movatterモバイル変換


[0]ホーム

URL:


KR870011700A - Thin film transistor - Google Patents

Thin film transistor
Download PDF

Info

Publication number
KR870011700A
KR870011700AKR1019860004005AKR860004005AKR870011700AKR 870011700 AKR870011700 AKR 870011700AKR 1019860004005 AKR1019860004005 AKR 1019860004005AKR 860004005 AKR860004005 AKR 860004005AKR 870011700 AKR870011700 AKR 870011700A
Authority
KR
South Korea
Prior art keywords
thin film
film transistor
semiconductor layer
amorphous semiconductor
insulating film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
KR1019860004005A
Other languages
Korean (ko)
Other versions
KR890003414B1 (en
Inventor
최광수
Original Assignee
삼성전관 주식회사
김정배
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 삼성전관 주식회사, 김정배filedCritical삼성전관 주식회사
Priority to KR1019860004005ApriorityCriticalpatent/KR890003414B1/en
Publication of KR870011700ApublicationCriticalpatent/KR870011700A/en
Application grantedgrantedCritical
Publication of KR890003414B1publicationCriticalpatent/KR890003414B1/en
Expiredlegal-statusCriticalCurrent

Links

Classifications

Landscapes

Abstract

Translated fromKorean

내용 없음No content

Description

Translated fromKorean
박막 트랜지스터Thin film transistor

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제1도는 종래 기술에 의한 박막트랜지스터의 구조를 나타낸 단면도.1 is a cross-sectional view showing the structure of a thin film transistor according to the prior art.

제2도는 (A)-(D)는 본 발명에 의한 박막트랜지스터의 제조공정을 설명하기 위한 도면.2 is a view for explaining the manufacturing process of the thin film transistor according to the present invention (A)-(D).

Claims (2)

Translated fromKorean
유리기판(10)상에 게이트전극(20)이 형성되어 있으며, 그위에 쵬소한 a-SIN의 절연막(30), 소스 및 드레인전극(50,60), 투명도전막(70)과 보호막(80)이 형성되어 있는 박막트랜지스터에 있어서, a-Si의 비정질반도체층(40)이 상기한 절연막(30)과 전극 및 보호막(50,60,70,80) 사이에 위치한 상태로 표시패널전체에 걸쳐 증착형성되어 있는 것을 특징으로 하는 박막트랜지스터.The gate electrode 20 is formed on the glass substrate 10, and the a-SIN insulating film 30, the source and drain electrodes 50 and 60, the transparent conductive film 70 and the protective film 80 are formed thereon. In the formed thin film transistor, the a-Si amorphous semiconductor layer 40 is deposited on the entire display panel with the a-Si amorphous semiconductor layer 40 positioned between the insulating film 30, the electrode, and the protective films 50, 60, 70, and 80. A thin film transistor, characterized in that formed.제1항에 있어서, 상기한 비정질 반도체층(40)의 두께가 300-1000A。인 것을 특징으로 하는 박막트랜지스터.The thin film transistor according to claim 1, wherein the amorphous semiconductor layer (40) has a thickness of 300-1000A.※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019860004005A1986-05-221986-05-22 Thin film transistorExpiredKR890003414B1 (en)

Priority Applications (1)

Application NumberPriority DateFiling DateTitle
KR1019860004005AKR890003414B1 (en)1986-05-221986-05-22 Thin film transistor

Applications Claiming Priority (1)

Application NumberPriority DateFiling DateTitle
KR1019860004005AKR890003414B1 (en)1986-05-221986-05-22 Thin film transistor

Publications (2)

Publication NumberPublication Date
KR870011700Atrue KR870011700A (en)1987-12-26
KR890003414B1 KR890003414B1 (en)1989-09-20

Family

ID=19250079

Family Applications (1)

Application NumberTitlePriority DateFiling Date
KR1019860004005AExpiredKR890003414B1 (en)1986-05-221986-05-22 Thin film transistor

Country Status (1)

CountryLink
KR (1)KR890003414B1 (en)

Also Published As

Publication numberPublication date
KR890003414B1 (en)1989-09-20

Similar Documents

PublicationPublication DateTitle
EP0270323A3 (en)A thin-film transistor
KR880001179A (en) Method of manufacturing thin film transistor array substrate
KR900019245A (en) Thin film transistor and its manufacturing method
JPS5688363A (en)Field effect transistor
KR870011700A (en) Thin film transistor
JPS567480A (en)Film transistor
JPS6476035A (en)Manufacture of tft panel
KR890008995A (en) Thin film transistor
KR910017646A (en) Fabrication method of thin film FET transistor using plasma oxidation
KR890016682A (en) Thin Film Transistors for Flat Panel Displays
KR900005612A (en) Amorphous Silicon Thin Film Transistor with 4 Mask Level Protection Structure
KR950012754A (en) Thin film transistor for liquid crystal display device and manufacturing method thereof
KR930005239A (en) TFT manufacturing method
KR920003534A (en) Method of manufacturing thin film transistor
KR920013770A (en) Thin Film Transistor Manufacturing Method
KR900015350A (en) Amorphous silicon thin film transistor
KR910005390A (en) High voltage thin film transistor and its manufacturing method
KR900015359A (en) TFT with double gate structure
KR970016679A (en) Thin film transistor substrate for liquid crystal display device and manufacturing method thereof
KR900005560A (en) Electrode Formation Method of Thin Film Transistor
KR860003668A (en) Manufacturing method of activation matrix thin film transistor star for liquid crystal drive
KR940001455A (en) Method of manufacturing polycrystalline silicon thin film transistor
KR930020718A (en) Manufacturing method of thin film transistor for liquid crystal display
KR910016090A (en) Thin film transistor for liquid crystal display device and manufacturing method thereof
KR860003669A (en) Method of manufacturing thin film transistor for liquid crystal drive with top gate structure

Legal Events

DateCodeTitleDescription
A201Request for examination
PA0109Patent application

St.27 status event code:A-0-1-A10-A12-nap-PA0109

PA0201Request for examination

St.27 status event code:A-1-2-D10-D11-exm-PA0201

R17-X000Change to representative recorded

St.27 status event code:A-3-3-R10-R17-oth-X000

R17-X000Change to representative recorded

St.27 status event code:A-3-3-R10-R17-oth-X000

PG1501Laying open of application

St.27 status event code:A-1-1-Q10-Q12-nap-PG1501

G160Decision to publish patent application
PG1605Publication of application before grant of patent

St.27 status event code:A-2-2-Q10-Q13-nap-PG1605

E701Decision to grant or registration of patent right
PE0701Decision of registration

St.27 status event code:A-1-2-D10-D22-exm-PE0701

GRNTWritten decision to grant
PR0701Registration of establishment

St.27 status event code:A-2-4-F10-F11-exm-PR0701

PR1002Payment of registration fee

St.27 status event code:A-2-2-U10-U11-oth-PR1002

Fee payment year number:1

PR1001Payment of annual fee

St.27 status event code:A-4-4-U10-U11-oth-PR1001

Fee payment year number:4

PR1001Payment of annual fee

St.27 status event code:A-4-4-U10-U11-oth-PR1001

Fee payment year number:5

PR1001Payment of annual fee

St.27 status event code:A-4-4-U10-U11-oth-PR1001

Fee payment year number:6

PR1001Payment of annual fee

St.27 status event code:A-4-4-U10-U11-oth-PR1001

Fee payment year number:7

PR1001Payment of annual fee

St.27 status event code:A-4-4-U10-U11-oth-PR1001

Fee payment year number:8

PR1001Payment of annual fee

St.27 status event code:A-4-4-U10-U11-oth-PR1001

Fee payment year number:9

PR1001Payment of annual fee

St.27 status event code:A-4-4-U10-U11-oth-PR1001

Fee payment year number:10

PR1001Payment of annual fee

St.27 status event code:A-4-4-U10-U11-oth-PR1001

Fee payment year number:11

PN2301Change of applicant

St.27 status event code:A-5-5-R10-R13-asn-PN2301

St.27 status event code:A-5-5-R10-R11-asn-PN2301

PN2301Change of applicant

St.27 status event code:A-5-5-R10-R13-asn-PN2301

St.27 status event code:A-5-5-R10-R11-asn-PN2301

FPAYAnnual fee payment

Payment date:20000814

Year of fee payment:12

PR1001Payment of annual fee

St.27 status event code:A-4-4-U10-U11-oth-PR1001

Fee payment year number:12

R17-X000Change to representative recorded

St.27 status event code:A-5-5-R10-R17-oth-X000

LAPSLapse due to unpaid annual fee
PC1903Unpaid annual fee

St.27 status event code:A-4-4-U10-U13-oth-PC1903

Not in force date:20010921

Payment event data comment text:Termination Category : DEFAULT_OF_REGISTRATION_FEE

PC1903Unpaid annual fee

St.27 status event code:N-4-6-H10-H13-oth-PC1903

Ip right cessation event data comment text:Termination Category : DEFAULT_OF_REGISTRATION_FEE

Not in force date:20010921

R18-X000Changes to party contact information recorded

St.27 status event code:A-5-5-R10-R18-oth-X000

R17-X000Change to representative recorded

St.27 status event code:A-5-5-R10-R17-oth-X000

R18-X000Changes to party contact information recorded

St.27 status event code:A-5-5-R10-R18-oth-X000

R18-X000Changes to party contact information recorded

St.27 status event code:A-5-5-R10-R18-oth-X000

R18-X000Changes to party contact information recorded

St.27 status event code:A-5-5-R10-R18-oth-X000

P22-X000Classification modified

St.27 status event code:A-4-4-P10-P22-nap-X000

R18-X000Changes to party contact information recorded

St.27 status event code:A-5-5-R10-R18-oth-X000

P22-X000Classification modified

St.27 status event code:A-4-4-P10-P22-nap-X000


[8]ページ先頭

©2009-2025 Movatter.jp