KR102491945B1 - 기판 처리 장치 - Google Patents
기판 처리 장치Download PDFInfo
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- KR102491945B1 KR102491945B1KR1020170110341AKR20170110341AKR102491945B1KR 102491945 B1KR102491945 B1KR 102491945B1KR 1020170110341 AKR1020170110341 AKR 1020170110341AKR 20170110341 AKR20170110341 AKR 20170110341AKR 102491945 B1KR102491945 B1KR 102491945B1
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- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
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- H—ELECTRICITY
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Abstract
Description
본 발명은 기판 처리 장치에 관한 것으로, 보다 구체적으로 플라즈마 공정을 이용하여 기판을 처리하는 기판 처리 장치에 관한 것이다.
반도체 소자의 크기가 지속적으로 줄어듦에 따라 보다 저온에서 보다 정밀한 박막 증착 제어의 필요성이 제기되었다. 그에 따라 플라즈마 원자층 증착(Plasma Enhanced Atomic Layer Deposition; PEALD) 방법과 같은 플라즈마를 이용하는 공정이 제안되었고, 플라즈마 공정의 응용범위가 계속적으로 확대되고 있다.
플라즈마 공정에서는 플라즈마에 의해 반응 기체가 라디칼로 분해된다. 따라서 반응공간에서 안정적이면서도 정밀한 플라즈마 제어가 필요하다. 한편 기판의 크기가 대형화됨에 따라 기판 위 반응 공간 내에 균일한 플라즈마가 생성되도록 하기 위해 다양한 방법이 사용되어 왔다. 한 예로, 플라즈마 전극에 플라즈마 전력(ex. RF power)을 공급하는 RF 로드(RF rod)를 복수 개로 설치하여 반응공간 내의 단위 부피당 라디칼 밀도를 보다 균일하게 유지할 수 있다.
본 발명이 해결하고자 하는 일 과제는, RF 로드와 같은 플라즈마 전달체를 흐르는 플라즈마 전류들의 상호간섭 효과(cross-talk effect)에 의해 반응 공간 내에서 생성되는 플라즈마의 밀도가 균일하지 않게 되고 그에 따라 기판 상에 처리되는 박막의 품질이 일정하지 않은 문제를 방지할 수 있는 기판 처리 장치를 제공하는 것이다.
본 발명이 해결하고자 하는 다른 과제는 고품질의 박막을 증착하기 위해 60MHz이상의 고주파 플라즈마를 인가하는 기판 가공 공정에서 보다 균일한 플라즈마 인가 및 그에 따른 균일한 박막 품질을 달성할 수 있는 기판 처리 장치를 제공하는 것이다.
본 발명의 기술적 사상에 따른 실시예들의 일 측면에 따르면, 기판 처리 장치는, 반응기; 상기 반응기 내에 배치된 기체 공급 수단; 상기 기체 공급 수단과 전기적으로 연결된 플라즈마 공급부를 포함하고, 상기 플라즈마 공급부는, 제1 도전성 부분; 상기 제1 도전성 부분과 적어도 일부가 오버랩되도록 연장되는 제2 도전성 부분; 및 상기 제1 도전성 부분과 상기 제2 도전성 부분 사이에 배치된 그라운드 쉴드를 포함할 수 있다.
상기 기판 처리 장치의 일 예에 따르면, 상기 제2 도전성 부분은 상기 기체 공급 수단을 향하여 연장되고, 그에 따라 상기 제2 도전성 부분과 상기 기체 공급 수단이 전기적으로 연결될 수 있다.
상기 기판 처리 장치의 다른 예에 따르면, 상기 기판 처리 장치는 상기 제1 도전성 부분과 전기적으로 연결되도록 상기 제1 도전성 부분을 향하여 연장되는 RF 로드; 및 상기 RF 로드를 둘러싸며 상기 반응기와 전기적으로 연결된 커버를 더 포함하고, 상기 제1 도전성 부분 및 상기 제2 도전성 부분 중 적어도 하나에 의해 발생한 유도 신호 성분은, 상기 그라운드 쉴드, 상기 반응기, 및 상기 커버를 통해 흐를 수 있다.
상기 기판 처리 장치의 다른 예에 따르면, 상기 기판 처리 장치는 상기 그라운드 쉴드를 상기 반응기에 기계적으로 고정시키는 적어도 하나의 금속 부재를 더 포함할 수 있다.
상기 기판 처리 장치의 다른 예에 따르면, 상기 그라운드 쉴드는 판형이고, 상기 제1 도전성 부분과 상기 제2 도전성 부분을 연결하는 공간을 제공하는 관통 홀을 적어도 하나 포함할 수 있다.
상기 기판 처리 장치의 다른 예에 따르면, 상기 그라운드 쉴드는 고리형의 원판 형태이고, 상기 그라운드 쉴드의 고리 내부로 상기 기체 공급 수단과 연결된 기체 유입구가 배치될 수 있다.
본 발명의 기술적 사상에 따른 실시예들의 다른 측면에 따르면, 기판 처리 장치는, 기체 유입구; 상기 기체 유입구에 연결된 기체 공급 수단; 및 상기 기체 공급 수단과 전기적으로 연결된 플라즈마 공급부를 포함하고, 상기 플라즈마 공급부는, 플라즈마 생성부; 상기 플라즈마 생성부와 연결된 RF 로드(RF rod); 상기 RF 로드와 연결되며, 상기 기체 유입구를 둘러싸도록 연장되는 브릿지(bridge); 상기 기체 유입구를 중심으로 대칭적으로 배치되는 복수의 피드들; 및 상기 브릿지와 상기 피드들 사이를 연결하는 분기점(spilt point)을 포함할 수 있다.
상기 기판 처리 장치의 일 예에 따르면, 상기 복수의 피드들은, 적어도 일부가 상기 브릿지의 일 단부와 오버랩되도록 연장되는 제1 피드; 상기 제1 피드의 연장 방향과 반대되는 방향으로 연장되는 제2 피드; 적어도 일부가 상기 브릿지의 다른 단부와 오버랩되도록 연장되는 제3 피드; 및 상기 제3 피드의 연장 방향과 반대되는 방향으로 연장되는 제4 피드를 포함할 수 있다.
상기 기판 처리 장치의 다른 예에 따르면, 상기 플라즈마 공급부는, 상기 브릿지와 상기 복수의 피드들 사이에 배치된 그라운드 쉴드를 더 포함할 수 있다.
본 발명의 기술적 사상에 따른 실시예들의 또 다른 측면에 따르면, 기판 처리 장치는, 플라즈마 생성부; RF 로드(main RF rod); 브릿지(bridge); 분기점(spilt point); 복수개의 피드들(RF feeds); 및 상기 브릿지 및 상기 복수개의 피드들 사이에 배치된 그라운드 쉴드;로 이루어진 플라즈마 공급부를 포함하며, 상기 플라즈마 공급부는 반응기의 상부와 연결될 수 있다.
상기 기판 처리 장치의 일 예에 따르면, 상기 RF 로드와 상기 브릿지는 서로 연결되며; 상기 브릿지와 상기 복수개의 피드들은 상기 분기점(split point)에서 서로 연결되며, 플라즈마 생성부에서 생성된 RF 전류는 상기 RF 로드, 상기 브릿지, 상기 분기점 및 상기 복수개의 피드들을 통해 상기 반응기로 공급될 수 있다.
상기 기판 처리 장치의 다른 예에 따르면, 상기 복수개의 피드들은 상기 기판 처리 장치의 중심을 기준으로 대칭적으로 배치될 수 있다.
상기 기판 처리 장치의 다른 예에 따르면, 상기 그라운드 쉴드는 금속으로 이루어질 수 있다. 선택적인 실시예에서, 상기 그라운드 쉴드는 알루미늄으로 이루어질 수 있다.
상기 기판 처리 장치의 다른 예에 따르면, 상기 그라운드 쉴드는 상기 브릿지와 상기 피드들 사이에 형성되는 크로스토크(cross-talk)를 방지하는 기능을 수행할 수 있다.
상기 기판 처리 장치의 다른 예에 따르면, 상기 플라즈마 생성부는 60MHz의 이상의 주파수를 갖는 플라즈마를 생성하도록 구성될 수 있다.
상기 기판 처리 장치의 다른 예에 따르면, 기판 처리 장치는 상기 반응기 상부에 연결된 상기 피드들 사이에 위치하는 기체 유입구를 더 포함하며, 상기 브릿지는 상기 기체 유입구를 우회하도록 형성될 수 있다.
도 1은 본 발명의 기술적 사상에 의한 실시예들에 따른 기판 처리 장치의 단면도를 개략적으로 나타낸다.
도 2 및 도 3은 본 발명의 기술적 사상에 의한 실시예들에 따른 기판 처리 장치를 개략적으로 나타낸다.
도 4a는 기판 처리 장치의 반응기의 중심을 기준으로 복수개의 4개의 도전성 구조물이 대칭되게 배치되는 플라즈마 공급부의 일부를 나타낸다.
도 4b는 도 4a의 도전성 구조물들 사이에서 크로스토크 현상이 발생하는 모습을 나타낸다.
도 5는 플라즈마 전달을 위한 도전성 구조물의 배치 형태에 따른 RF 전기장 분포 및 각 조건에서 수행되는 실리콘 산화막의 균일성에 대한 실험 결과를 보여준다.
도 6은 4개의 피드 RF 로드들과 함께 그라운드 쉴드가 설치된 플라즈마 공급부를 도시한 사시도이다.
도 7은 도 6에 설치된 그라운드 쉴드만을 따로 도시한 사시도이다.
도 8은 본 발명의 기술적 사상에 의한 실시예들에 따른 기판 처리 장치를 개략적으로 나타낸다.
도 9는 도 8의 기판 처리 장치의 플라즈마 공급부 부분을 보다 구체적으로 도시한다.
도 2 및 도 3은 본 발명의 기술적 사상에 의한 실시예들에 따른 기판 처리 장치를 개략적으로 나타낸다.
도 4a는 기판 처리 장치의 반응기의 중심을 기준으로 복수개의 4개의 도전성 구조물이 대칭되게 배치되는 플라즈마 공급부의 일부를 나타낸다.
도 4b는 도 4a의 도전성 구조물들 사이에서 크로스토크 현상이 발생하는 모습을 나타낸다.
도 5는 플라즈마 전달을 위한 도전성 구조물의 배치 형태에 따른 RF 전기장 분포 및 각 조건에서 수행되는 실리콘 산화막의 균일성에 대한 실험 결과를 보여준다.
도 6은 4개의 피드 RF 로드들과 함께 그라운드 쉴드가 설치된 플라즈마 공급부를 도시한 사시도이다.
도 7은 도 6에 설치된 그라운드 쉴드만을 따로 도시한 사시도이다.
도 8은 본 발명의 기술적 사상에 의한 실시예들에 따른 기판 처리 장치를 개략적으로 나타낸다.
도 9는 도 8의 기판 처리 장치의 플라즈마 공급부 부분을 보다 구체적으로 도시한다.
이하, 첨부된 도면을 참조하여 본 발명의 바람직한 실시예를 상세히 설명하기로 한다.
본 발명의 실시예들은 당해 기술 분야에서 통상의 지식을 가진 자에게 본 발명을 더욱 완전하게 설명하기 위하여 제공되는 것이며, 아래의 실시예들은 여러 가지 다른 형태로 변형될 수 있으며, 본 발명의 범위가 아래의 실시예들로 한정되는 것은 아니다. 오히려, 이들 실시예는 본 개시를 더욱 충실하고 완전하게 하며 당업자에게 본 발명의 사상을 완전하게 전달하기 위하여 제공되는 것이다.
본 명세서에서 사용된 용어는 특정 실시예를 설명하기 위하여 사용되며, 본 발명을 제한하기 위한 것이 아니다. 본 명세서에서 사용된 바와 같이 단수 형태는 문맥상 다른 경우를 분명히 지적하는 것이 아니라면, 복수의 형태를 포함할 수 있다. 또한, 본 명세서에서 사용되는 경우 "포함한다(comprise)" 및/또는 "포함하는(comprising)"은 언급한 형상들, 숫자, 단계, 동작, 부재, 요소 및/또는 이들 그룹의 존재를 특정하는 것이며, 하나 이상의 다른 형상, 숫자, 동작, 부재, 요소 및/또는 그룹들의 존재 또는 부가를 배제하는 것이 아니다. 본 명세서에서 사용된 바와 같이, 용어 "및/또는"은 해당 열거된 항목 중 어느 하나 및 하나 이상의 모든 조합을 포함한다.
본 명세서에서 제1, 제2 등의 용어가 다양한 부재, 영역 및/또는 부위들을 설명하기 위하여 사용되지만, 이들 부재, 부품, 영역, 층들 및/또는 부위들은 이들 용어에 의해 한정되어서는 안됨은 자명하다. 이들 용어는 특정 순서나 상하, 또는 우열의 의미하지 않으며, 하나의 부재, 영역 또는 부위를 다른 부재, 영역 또는 부위와 구별하기 위하여만 사용된다. 따라서, 이하 상술할 제1 부재, 영역 또는 부위는 본 발명의 가르침으로부터 벗어나지 않고서도 제2 부재, 영역 또는 부위를 지칭할 수 있다.
이하, 본 발명의 실시예들은 본 발명의 이상적인 실시예들을 개략적으로 도시하는 도면들을 참조하여 설명한다. 도면들에 있어서, 예를 들면, 제조 기술 및/또는 공차에 따라, 도시된 형상의 변형들이 예상될 수 있다. 따라서, 본 발명의 실시예는 본 명세서에 도시된 영역의 특정 형상에 제한된 것으로 해석되어서는 아니 되며, 예를 들면 제조상 초래되는 형상의 변화를 포함하여야 한다.
본 명세서에서 설명된 기판 처리 장치의 예로서 반도체 또는 디스플레이 기판의 증착 장치를 들 수 있으나, 본 발명은 이에 제한되지 않음에 유의한다. 기판 처리 장치는 박막 형성을 위한 물질의 퇴적을 수행하는데 필요한 여하의 장치일 수도 있고, 물질의 식각 내지 연마를 위한 원료가 균일하게 공급되는 장치를 지칭할 수도 있다. 이하에서는 편의상 기판 처리 장치가 반도체 증착 장치임을 전제로 설명하기로 한다.
도 1은 본 발명의 기술적 사상에 의한 실시예들에 따른 기판 처리 장치의 단면도를 개략적으로 나타낸다.
도 1을 참조하면, 기판 처리 장치는 반응기(1), 기체 유입구(미도시), 기체 공급 수단(3), 및 플라즈마 공급부(P)를 포함할 수 있다.
반응기(1)는 기판의 처리를 위한 반응 공간을 형성하는 구조체로서, 적어도 하나의 격벽을 포함할 수 있다. 상기 격벽은 기체 공급 수단(3)으로 기체를 공급하기 위한 기체 유입구(미도시)를 제공할 수 있다. 예를 들어 기체 유입구는 상기 격벽에 형성된 관통 홀 또는 상기 관통 홀에 배치된 도관으로 구현될 수 있다. 기판 처리 장치가 원자층 증착 장치인 경우, 기체 유입구를 통해 소스 가스, 퍼지 가스, 및/또는 반응 가스가 공급될 수 있다. 기체 유입구는 반응 공간의 중심에 배치될 수도 있고, 반응 공간의 측면에 배치될 수도 있으며, 반응 공간의 중심과 측면 모두에 배치될 수도 있다.
기체 공급 수단(3)은 반응기(1) 내에 배치되고 반응 공간 상의 피처리체에 기체를 공급하도록 구성될 수 있다. 기체 공급 수단(3)은 수평 흐름 방식, 샤워헤드 방식, 또는 반응 공간에 기체를 공급하기 위한 적절한 형태로 구현될 수 있다. 기체 공급 수단(3)은 도전체로 구현될 수 있다. 따라서, 기판 처리 장치가 플라즈마 원자층 증착 장치인 경우, 기체 공급 수단(3)은 플라즈마 인가를 위한 전극으로서 기능할 수 있다.
플라즈마 공급부(P)는 기체 공급 수단(3)과 전기적으로 연결될 수 있다. 예를 들어, 플라즈마 공급부(P)는 제1 도전성 부분(C1) 및 제2 도전성 부분(C2)을 포함할 수 있고, 제2 도전성 부분(C2)의 일 단부는 기체 공급 수단(3)을 향하여 연장될 수 있고, 그에 따라 제2 도전성 부분(C2)과 기체 공급 수단(3)이 전기적으로 연결될 수 있다. 따라서 플라즈마 공급부(P)에서 인가되는 전력은 기체 공급 수단(3)으로 전달될 수 있고, 반응기(1) 내에 배치된 기체 공급 수단(3)은 반응 공간에 플라즈마를 인가하는 기능을 수행할 수 있다.
제1 도전성 부분(C1)과 제2 도전성 부분(C2)은 서로 중첩되도록 연장될 수 있다. 예를 들어, 제1 도전성 부분(C1)과 제2 도전성 부분(C2)은 서로 평행하는 제1 방향으로 연장될 수 있고, 상기 제1 방향과 다른 제2 방향에서(예를 들어, 제1 방향(H)과 수직한 제2 방향(V)에서) 제1 도전성 부분(C1)과 제2 도전성 부분(C2)은 서로 중첩될 수 있다. 선택적인 실시예에서, 제1 도전성 부분(C1)에서 흐르는 제1 전류(I1)의 방향과 제2 도전성 부분(C2)에서 흐르는 제2 전류(IE1, IE2)의 방향은 서로 같거나 다를 수 있다.
플라즈마 공급부(P)는 제1 도전성 부분(C1)과 제2 도전성 부분(C2) 사이에 배치된 그라운드 쉴드(GS)를 더 포함할 수 있다. 그라운드 쉴드(GS)는 판형 구조로 구현될 수 있고, 금속 재질로 이루어질 수 있다. 일 실시예에서 그라운드 쉴드(GS)는 알루미늄으로 이루어질 수 있다. 선택적인 실시예에서, 그라운드 쉴드(GS)는 제1 도전성 부분(C1)과 제2 도전성 부분(C2)을 연결하는 공간을 제공하는 관통 홀(T)을 적어도 하나 포함할 수 있다. 예를 들어, 제1 도전성 부분(C1)과 제2 도전성 부분(C2)은 분기 부분(D)에 의해 연결될 수 있고, 분기 부분(D)은 그라운드 쉴드(GS)의 관통 홀(T)을 통해 연장될 수 있다.
제2 도전성 부분(C2)은 분기 부분(D)을 기준으로 제1 연장부(E1) 및 제1 연장부(E1)와 반대되는 방향으로 연장되는 제2 연장부(E2)를 포함할 수 있다. 제1 연장부(E1)는 제1 도전성 부분(C1)과 중첩되도록 연장될 수 있다. 그에 따라, 제1 도전성 부분(C1)에 흐르는 전류(I1)의 방향과 제2 도전성 부분(C2)의 제1 연장부(E1)에 흐르는 전류(IE1)의 방향은 서로 반대일 수 있고, 제1 도전성 부분(C1)에 흐르는 전류(I1)의 방향과 제2 도전성 부분(C2)의 제2 연장부(E2)에 흐르는 전류(IE2)의 방향은 서로 동일할 수 있다.
제2 도전성 부분(C2)의 제2 연장부(E2)에 흐르는 전류(IE2)는 제1 도전성 부분(C1)에 흐르는 전류(I1)와 동일한 방향으로 흐르므로, 전류간 상호간섭이 발생하지 않아 전력 전달에 문제가 없다. 그러나 제2 도전성 부분(C2)의 제1 연장부(E1)에 흐르는 전류(IE1)는 제1 도전성 부분(C1)에 흐르는 전류(I1)와 반대 방향으로 흐르므로, 양 전류간 상호간섭이 발생할 수 있다. 따라서 제2 연장부(E2)에 전달되는 플라즈마 전력에 비해 제1 연장부(E1)에 전달되는 플라즈마 전력이 감소할 수 있다.
이러한 전류간 상호간섭 및 그에 의한 전력 감소를 방지하기 위해, 제1 도전성 부분(C1)과 제2 도전성 부분(C2) 사이에 그라운드 쉴드(GS)가 배치될 수 있다. 예를 들어, 제1 도전성 부분(C1)과 제2 도전성 부분(C2)이 중첩되어 서로 다른 방향으로 전류가 흐르는 경우에, 이들 전류들에 의해 발생하는 유도 신호 성분이 그라운드 쉴드(GS)를 통해 배출될 수 있고, 그에 따라 전류들 및 전류들에 의해 발생하는 유도 신호 성분에 의한 크로스토크(Cross-Talk)가 방지될 수 있다.
선택적인 실시예에서, 그라운드 쉴드(GS)는 반응기(1)와 전기적으로 연결될 수 있다. 따라서 제1 도전성 부분(C1) 및 상기 제2 도전성 부분(C2) 중 적어도 하나에 의해 발생한 유도 신호 성분은 그라운드 쉴드(GS) 및 반응기(1)를 통해 외부로 배출될 수 있다.
예를 들어, 반응기(1) 상에는 플라즈마 생성기(G)로부터 제1 도전성 부분(C1)을 향하여 연장되는 RF 로드(R)가 배치될 수 있다. 또한 반응기(1)와 전기적으로 연결된 커버(CV)가 RF 로드(R) 주변을 둘러싸도록 배치될 수 있다. 이 경우 제1 도전성 부분(C1) 및 제2 도전성 부분(C2) 중 적어도 하나에 의해 발생한 유도 신호 성분은, 그라운드 쉴드(GS), 반응기(1), 및 커버(CV)를 통해 흐를 수 있다.
그라운드 쉴드(GS)와 반응기(1) 사이의 기계적인 및/또는 전기적인 연결을 위해, 그라운드 쉴드(GS)와 반응기(1)는 서로 접촉하도록 형성될 수 있다. 예를 들어, 반응기(1)는 그것의 일부 면이 판형 그라운드 쉴드(GS)의 하면과 접촉하도록 연장될 수 있다. 선택적인 실시예에서, 기판 처리 장치는 금속 부재(M)를 더 포함할 수 있고, 상기 금속 부재(M)는 그라운드 쉴드(GS)를 관통하여 반응기(1)와 접촉하도록 또는 반응기(1)에 고정될 수 있다. 예를 들어, 상기 금속 부재(M)는 금속 볼트로 형성될 수 있다. 상기 금속 부재(M)에 의해 그라운드 쉴드(GS)가 반응기(1)에 기계적으로 고정될 수 있으며, 결과적으로 그라운드 쉴드(GS)와 반응기(1)가 전기적으로 연결되어 접지 채널이 형성될 수 있다.
도 2 및 도 3은 본 발명의 기술적 사상에 의한 실시예들에 따른 기판 처리 장치를 개략적으로 나타낸다. 이 실시예들에 따른 기판 처리 장치는 전술한 실시예들에 따른 기판 처리 장치의 변형예일 수 있다. 이하 실시예들간 중복되는 설명은 생략하기로 한다.
도 2를 참조하면, 반응기(1)는 2개의 전극들(즉, 기체 공급 수단(3)에 의한 제1 전극, 기판 지지대(4)에 의한 제2 전극) 사이의 반응 공간(5)에서 플라즈마를 발생시키는 인-시츄(in-situ) 플라즈마 공정을 위한 기판 처리 장치일 수 있다. 기체 공급 수단(3)은 샤워헤드일 수 있으며 기체 유입구(2)를 통해 유입된 기체를 기판 지지대(4)와의 사이에 형성된 반응 공간(5)으로 공급할 수 있다.
기체 공급 수단(3)은 그 일면에 RF 로드(RF rod)(10)를 포함하고 있으며 상기 RF 로드(10)는 플라즈마 공정을 위한 플라즈마 생성기(8) 및 매칭 네트워크(9)와 연결될 수 있다. 플라즈마 생성기(8)는 RF 생성기(RF generator)일 수 있으며 플라즈마 생성기(8)에서 생성된 플라즈마 전력은 매칭 네트워크(9)와 RF 로드(10)를 거쳐 기체 공급 수단(3)으로 공급될 수 있다. 기체 공급 수단(3)은 전극으로 작용하여 반응 공간(5)에 있는 기체를 분해하며 플라즈마를 생성시키고 기판(미도시)위에서 화학 반응을 유도할 수 있다.
도 3은 다른 실시예들에 따른 기판 처리 장치로서, 기체 유입구(2)를 기준으로 대칭적으로 배치된 복수개의 RF 로드들(10, 11)이 도시된다. 기체 유입구(2)는 반응기(1) 격벽에 형성된 관통 홀에 배치된 도관을 통해 형성될 수도 있고, 반응기(1) 격벽 구조(즉, 관통 홀) 자체로 형성될 수도 있다. 샤워헤드형 기체 공급 수단의 경우 기체 유입구(2)가 반응기(1) 중앙에 위치하기 때문에, 기체 공급 수단에 플라즈마 파워를 전달하는 RF 로드는 상기 기체 공급 수단의 중앙에 위치할 수 없고 한쪽 측면에 위치하게 된다(도 2 참조).
도 3은 일 측면에 위치하는 RF 로드로 인해 반응공간 내의 플라즈마 전력 인가가 불균일하게 되는 점을 고려하여, 반응기의 중심을 기준으로 복수개의 RF 로드가 대칭되게 배치되는 모습을 도시한다. RF 로드의 개수는 2개, 4개 등으로 증가시킬 수 있다. 그러한 대칭적 배치를 구성함으로써, RF 로드의 편향 배치로 인해 반응 공간에 가해지는 플라즈마 전력의 불균형 배치 문제가 개선될 수 있다.
본 명세서에서 기술된 "RF 로드"는 플라즈마 공급부(예를 들어, 플라즈마 생성기 및/또는 매칭 네트워크)와 기체 공급 수단 사이에 배치되는 일련의 도전성 구조물을 지칭하는 것일 뿐, "RF 로드" 자체가 고유의 위치나 형상을 의미하는 것은 아니다. 또한 본 명세서의 상세한 설명 및 청구범위에서 "RF 로드" 이외에 "브릿지", "피드", 내지 "피드 RF 로드"와 같이 도전성 구조물을 지칭하는 다양한 용어들이 사용되지만, 상기 용어들은 서로 혼용되어 사용될 수 있다.
도 4는 반응기의 중심을 기준으로 복수개의 4개의 도전성 구조물이 대칭되게 배치되는 모습(도 4a)과 이러한 도전성 구조물들 사이에서 크로스토크 현상이 발생하는 것(도 4b)을 설명한다.
도 4a를 참조하면, 플라즈마 공급부는 RF 로드(15), 브릿지(16), 분기점들(17, 18), 제1 피드(19), 제2 피드(20), 제3 피드(21) 및 제4 피드(22),각 피드와 연결된 피드 RF 로드(F)를 포함할 수 있다. 피드들(19, 20, 21, 22)은 피드 RF 로드(F)를 통해 기체 공급 수단(미도시)에 연결될 수 있다. 제1 피드(19) 및/또는 제2 피드(20)는 반응기의 중심을 기준으로 제3 피드(21) 및/또는 제4 피드(22)와 대칭적으로 배치될 수 있다. 마찬가지로, 피드 RF 로드(F)도 반응기의 중심을 기준으로 대칭적으로 배치될 수 있다. 그에 따라 반응공간에 생성되는 플라즈마의 균일성이 향상될 수 있다.
RF 로드(15)는 플라즈마 생성부와(미도시) 연결될 수 있다. 플라즈마 생성부(미도시)는 60MHz의 이상의 주파수를 갖는 플라즈마를 생성하도록 구성될 수 있다. 브릿지(16)는 RF 로드(15)와 연결될 수 있다. 브릿지(16)는 기체 유입구(2)의 일부를 둘러싸도록 연장될 수 있다. 복수의 피드들(19, 20, 21, 22)은 기체 유입구(도 9의 2)를 중심으로 대칭적으로 배치될 수 있다. 또한 피드 RF 로드(F)도 기체 유입구(도 9의 2)를 중심으로 대칭적으로 배치될 수 있다. 따라서 상기 기체 유입구는 반응기 상부에 연결된 피드들(19, 20, 21, 22) 사이에 및/또는 반응기 상부에 연결된 피드 RF 로드들(F) 사이에 위치할 수 있다.
분기점(17, 18)은 브릿지(16)와 피드들(19, 20, 21, 22) 사이를 연결할 수 있다. 예를 들어, 제1 피드(19) 및 제2 피드(20)는 제1 분기점(17)를 통해 브릿지(16)와 연결될 수 있다. 또한, 제3 피드(21) 및 제4 피드(22)는 제2 분기점(18)를 통해 브릿지(16)와 연결될 수 있다.
브릿지(16)는 RF 로드(15)로부터 연장되는 직선 연장부(16A) 및 직선 연장부(16A)로부터 기체 유입구(도 9의 2)를 우회하여 기체 유입구(2)의 적어도 일부를 둘러싸도록 연장되는 둘레 연장부(16B, 16C)를 포함할 수 있다. 둘레 연장부(16B, 16C)는 직선 연장부(16A)로부터 반응기(또는 기체 유입구(2))의 중심을 기준으로 반시계방향으로 90도 연장되는 제1 둘레 연장부(16B) 및 직선 연장부(16A)로부터 반응기(또는 기체 유입구(2))의 중심을 기준으로 시계방향으로 90도 연장되는 제2 둘레 연장부(16C)를 포함할 수 있다.
제1 둘레 연장부(16B)는 제1 분기점(17)을 통해 제1 피드(19) 및 제2 피드(20)와 연결될 수 있다. 제1 피드(19)의 적어도 일부는 브릿지(16)의 일 단부와 중첩될 수 있다. 예를 들어, 브릿지(16)의 제1 둘레 연장부(16B)는 반시계 방향으로 90도 연장될 수 있고, 반시계 방향으로 90도 연장되는 브릿지(16)의 일 단부는 제1 피드(19)와 중첩될 수 있다. 제2 피드(20)는 제1 피드(19)의 연장 방향과 반대되는 방향으로 연장될 수 있다.
제2 둘레 연장부(16C)는 제2 분기점(18)을 통해 제3 피드(21) 및 제4 피드(22)와 연결될 수 있다. 제3 피드(21)의 적어도 일부는 브릿지(16)의 다른 단부와 중첩될 수 있다. 예를 들어, 브릿지(16)의 제2 둘레 연장부(16C)는 시계 방향으로 90도 연장될 수 있고, 시계 방향으로 90도 연장되는 브릿지(16)의 다른 단부는 제3 피드(21)와 중첩될 수 있다. 제4 피드(22)는 제3 피드(21)의 연장 방향과 반대되는 방향으로 연장될 수 있다.
도 4b를 참조하면, 플라즈마 전류(I)가 RF 로드(15), 브릿지(16), 분기점(17, 18), 및 제1 내지 제4 피드들(19, 20, 21, 22)을 통해 반응기로 공급될 때 크로스토크(cross-talk) 현상이 발생한다.
브릿지(16)의 제1 둘레 연장부(16B)의 단부에서 흐르는 전류(I1)의 방향과 제1 피드(19)에서 흐르는 전류(IE1)의 방향은 서로 반대일 수 있고 제2 피드(20)에서 흐르는 전류(IE2)의 방향과는 서로 동일할 수 있다. 마찬가지로 브릿지(16)의 제2 둘레 연장부(16C)의 단부에서 흐르는 전류(I2)의 방향과 제3 피드(21)에서 흐르는 전류(IE3)의 방향은 서로 반대일 수 있고 제4 피드(22)에서 흐르는 전류(IE4)의 방향과는 서로 동일할 수 있다.
이와 같이, 브릿지(16)를 흐르는 플라즈마 전류(I1, I2)와 제1 피드(19) 및 제3 피드(21)를 흐르는 전류들(IE1, IE3)은 서로 반대 방향으로 흐르게 되고, 그에 따라 전류 간 상호 간섭 현상이 생길 수 있다. 이것은 제1 피드(19) 및 제3 피드(21)를 흐르는 플라즈마 전류(IE1, IE3)와 제2 피드(20) 및 제4 피드(22)를 흐르는 플라즈마 전류(IE2, IE4)의 상호 불균형을 발생시켜, 반응기 내 플라즈마의 RF 전기장(E-field)의 불균형을 야기한다. 그리고 이와 같은 불균형은 플라즈마 주파수가 증가할수록 심해진다.
도 5는 플라즈마 전달을 위한 도전성 구조물의 배치 형태에 따른 RF 전기장 분포 및 각 조건에서 수행되는 실리콘 산화막의 균일성에 대한 실험 결과를 보여준다.
도 5a 및 도 5b는 2개의 피드 RF 로드들을 설치한 반응기에 각각 27.12MHz와 60MHz의 플라즈마를 인가했을 때를 도시한다. 도 5a의 27.12MHz 주파수를 인가하는 경우에 비해, 도 5b의 60MHz 주파수를 인가하는 경우에, 즉 플라즈마 인가 주파수가 증가할수록, 전기장 균일성과 박막 균일성이 안 좋아지는 것을 알 수 있다.
도 5c 및 도 5d는 4개의 피드 RF 로드들을 설치한 반응기에 60MHz의 플라즈마를 인가했을 때의 경우로서, 각각 그라운드 쉴드가 없는 경우와 그라운드 쉴드를 적용한 경우의 전기장 균일성 및 박막 균일성을 나타낸다. 특히 60MHz의 고주파 공정이 적용되는 경우, 도 5b 및 도 5c와 비교하여 4-웨이 피드(4-way feed) RF 로드에 그라운드 쉴드가 삽입된 도 5d에서 RF 전기장 균일성 및 박막 균일성이 크게 향상 되었음을 알 수 있다. 즉 그라운드 쉴드가 각 RF 로드를 흐르는 플라즈마 전류간의 크로스토크 현상을 제어하는 것을 알 수 있다.
도 6은 4개의 피드 RF 로드들과 함께 그라운드 쉴드가 설치된 플라즈마 공급부를 도시한 사시도이고, 도 7은 도 6에 설치된 그라운드 쉴드만을 따로 도시한 사시도이다. 이 실시예들에 따른 플라즈마 공급부 및 이를 포함하는 기판 처리 장치는 전술한 실시예들의 변형예일 수 있다. 이하 실시예들간 중복되는 설명은 생략하기로 한다.
도 6을 참조하면, 플라즈마 생성부(미도시)와 연결된 플라즈마 공급부의 RF 로드(R)는 브릿지(16)와 연결되며, 브릿지(16)와 복수의 피드 RF 로드들(F)은 분기점들(17, 18)에서 서로 연결될 수 있다. 그에 따라 상기 플라즈마 생성부에서 생성된 RF 전류는 RF 로드(R), 브릿지(16), 분기점들(17, 18), 피드들(점선 표시), 및 복수의 피드 RF 로드들(F)을 통해 반응기로 공급될 수 있다. 복수의 피드 RF 로드들(F)은 기판 처리 장치의 중심을 기준으로 대칭적으로 배치될 수 있다. 예를 들어, 복수의 피드 RF 로드들(F)은 반응기에 설치된 기체 공급 수단(미도시)을 향하여 연장되는데, 이러한 연장 지점들이 기판 처리 장치의 중심을 기준으로 대칭적으로 배치될 수 있다.
그라운드 쉴드(GS)는 브릿지(16)와 복수의 피드들(Fig.4a의 19,20,21,22) 사이에 배치될 수 있다. 그라운드 쉴드(GS)는 고리형의 원판 형태일 수 있다. 또한 선택적으로 그라운드 쉴드(GS)의 고리 내부로 기체 공급 수단과 연결된 기체 유입구(도 9의 2)가 배치될 수 있다. 선택적인 실시예에서, 그라운드 쉴드(GS)는 복수의 패널들을 포함할 수 있고, 그에 따라 그라운드 쉴드(GS)와 분기점의 체결 또는 그라운드 쉴드(GS)와 반응기 간의 체결이 용이하게 달성될 수 있다.
예를 들어 도 7에 나타난 바와 같이, 그라운드 쉴드는 제1 패널(25-1) 및 제2 패널(25-2)을 포함할 수 있고, 기체 유입구를 중심으로 제1 패널(25-1)과 제2 패널(25-2)을 양측에 배치하고 제1 패널(25-1)과 제2 패널(25-2)을 조립함으로써, 기체 유입구를 둘러싸는 그라운드 쉴드 구조가 달성될 수 있다. 그러나 그라운드 쉴드는 일체형으로 제작될 수도 있고, 분기점 및/또는 반응기와의 결합을 용이하게 하기 위한 다른 형태로 제작될 수도 있다.
비록 전술한 실시예들이 브릿지(16)와 제1 내지 제4 피드들(혹은 제 1 내지 제 4피드들) 사이에 그라운드 쉴드를 삽입하여 브릿지(16)와 피드들(혹은 제 1 내지 제 4피드들) 간의 크로스토크 현상을 방지하는 구성을 위주로 설명되었지만, 본 발명은 이에 제한되지 않음에 유의한다. 그라운드 쉴드(GS)는 예를 들어 제1 피드(도 4a의 19)와 제3 피드(도 4a의 21) 사이로 연장될 수 있고, 다른 예에서 그라운드 쉴드(GS)는 브릿지(16)의 제1 둘레 연장부(16B)와 제2 둘레 연장부(16C) 사이로 연장될 수도 있다. 또한 그라운드 쉴드(GS)는 피드 RF 로드들(F) 사이에 연장될 수도 있다.
다시 말해, 그라운드 쉴드(GS)는 적어도 일부분이 서로 중첩되는 제1 도전성 부분(C1)과 제2 도전성 부분(C2) 사이에 배치될 수 있고, 그에 따라 서로 중첩되는 부분에서 발생할 수 있는 크로스토크가 방지되어 전체적인 전기장과 막 균일성이 개선될 수 있다.
도 8은 본 발명의 기술적 사상에 의한 실시예들에 따른 기판 처리 장치를 개략적으로 나타낸다. 이 실시예들에 따른 기판 처리 장치는 전술한 실시예들에 따른 기판 처리 장치의 변형예일 수 있다. 이하 실시예들간 중복되는 설명은 생략하기로 한다.
도 8을 참조하면, 기판 처리 장치는 반응기(1)와 기판 지지대(4)가 면접촉(face-contact)및 면실링(face-sealing)을 하면서 반응 공간을 형성한다. 기판 지지대(4)에는 기판이 탑재되며 기판의 탑재/탈착(loading/unloading)을 위해 기판 지지대(4)의 하부는 상승/하강을 할 수 있는 장치(미도시)와 연결되어 있다.
반응기(1)에는 기체 공급 수단(3)과 연결되는 기체 유입구(2)가 형성된다. 기체 유입구(2)는 별도의 도관을 이용하여 형성될 수도 있고, 반응기(1)에 관통 홀을 형성하여 형성될 수도 있다. 반응기(1) 상부에는 플라즈마 공급부(P)가 배치된다. 플라즈마 공급부(P)는 플라즈마 생성부(미도시), RF 로드(R), 브릿지(16), 피드들(19, 21), 피드 RF 로드들(F) 및 그라운드 쉴드(GS)를 포함할 수 있다.
플라즈마 공급부(P)는 기체 공급 수단(3)과 전기적으로 연결될 수 있다. 일 실시예에서, 플라즈마 공급부(P)는 RF 로드(R), 브릿지(16), 피드들(19, 21), 및 피드 RF 로드(F)를 통해 기체 공급 수단(3)과 전기적으로 연결될 수 있다. 보다 구체적으로, 피드들(19, 21)의 일 단부에 기체 공급 수단(3)을 향하여 연장되는 피드 RF 로드(F)가 배치될 수 있다. 예를 들어, 피드 RF 로드(F)는 반응기(1)를 관통하여 기체 공급 수단(3)과 기계적으로 연결될 수 있다. 또한, 피드 RF 로드(F)에 의해 피드들(19, 21)과 기체 공급 수단(3)이 전기적으로 연결될 수 있으며, 결과적으로 플라즈마 공급부(P)와 기체 공급 수단(3)의 전기적인 연결이 달성될 수 있다.
피드 RF 로드(F)와 반응기(1) 사이에는 지지 부재(I)가 삽입되어 있으며, 상기 지지 부재(I)는 절연체로 되어 있다. 따라서, 지지 부재(I)에 의해 피드 RF 로드(F)(및 피드 RF 로드(F)와 연결된 피드(19 또는 21))와 상기 반응기(1)가 전기적으로 절연될 수 있고, 그에 따라 플라즈마 공정 시 플라즈마 파워가 누설되는 것이 방지될 수 있다.
도 9는 도 8의 기판 처리 장치의 플라즈마 공급부 부분을 보다 구체적으로 도시한다. 도 9에 나타난 바와 같이, 그라운드 쉴드(GS)는 브릿지(16)와 피드들(점선으로 표시) 사이에 배치될 수 있다. 또한 그라운드 쉴드(GS)는 기체 유입구(2)가 배치되는 고리, 분기점이 배치되는 관통 홀(T), 및 그라운드 쉴드(GS)와 반응기(1)을 연결하기 위한 관통 홀(T')을 포함할 수 있다.
전술한 바와 같이, 분기점이 관통 홀(T)에 설치되어 플라즈마 공급부(P)가 기체 공급 수단(3)과 전기적으로 연결될 수 있고, 금속 부재(M)가 관통 홀(T')에 설치되어 그라운드 쉴드(GS)와 반응기(1)가 전기적으로 연결될 수 있다. 따라서 플라즈마 공급부(P)로부터 플라즈마 성분은 브릿지(16)와 피드들(19,20,21,22)을 통해 기체 공급 수단(3)으로 흐를 수 있고, 브릿지(16)와 피드 사이에 위치한 그라운드 쉴드(GS)에 의해 크로스토크 현상을 제어할 수 있다. .
간결성을 위해, 관련된 특징들의 제한된 개수의 조합들만 설명하였다. 그러나, 임의의 예의 특징이 임의의 다른 예의 특징과 조합될 수 있다는 것이 이해된다. 더욱이, 이들 이점이 비제한적이고 특별한 이점이 임의의 특별한 실시예의 특징이 되지 않거나, 또는 요구되지 않는다는 점이 이해된다.
본 발명을 명확하게 이해시키기 위해 첨부한 도면의 각 부위의 형상은 예시적인 것으로 이해하여야 한다. 도시된 형상 외의 다양한 형상으로 변형될 수 있음에 주의하여야 할 것이다.
이상에서 설명한 본 발명이 전술한 실시예 및 첨부된 도면에 한정되지 않으며, 본 발명의 기술적 사상을 벗어나지 않는 범위 내에서 여러 가지 치환, 변형 및 변경이 가능하다는 것은, 본 발명이 속하는 기술분야에서 통상의 지식을 가진 자에게 있어 명백할 것이다.
Claims (19)
- 삭제
- 삭제
- 삭제
- 삭제
- 삭제
- 삭제
- 기판 처리 장치로서,
기체 유입구;
기판 지지부를 포함하는 반응기로서, 상기 기체 유입구는 상기 기판 지지부에 대해 수직이며 상기 기판 지지부의 중심에 배치되는, 반응기;
상기 기체 유입구에 연결된 기체 공급 수단; 및
상기 기체 공급 수단과 전기적으로 연결된 플라즈마 공급부를 포함하고,
상기 플라즈마 공급부는,
플라즈마 생성부;
상기 플라즈마 생성부와 연결된 RF 로드(RF rod);
상기 RF 로드와 연결되며, 상기 기체 유입구를 둘러싸도록 연장되고 아치 형상을 갖는 브릿지(bridge)로서, 상기 브릿지는 상기 기체 유입구에 대하여 반시계 방향으로 연장되는 반시계 방향 연장부 및 상기 기체 유입구에 대하여 시계 방향으로 연장되는 시계 방향 연장부를 포함하는, 브릿지;
상기 기체 유입구를 중심으로 대칭적으로 배치되는 복수의 피드들; 및
상기 브릿지와 상기 복수의 피드들 사이에 배치된 그라운드 쉴드를 포함하고,
상기 복수의 피드들은,
수평 방향으로 그리고 길이 방향으로 연장되는 제1 피드로서, 상기 제1 피드의 적어도 일부는 상기 브릿지의 제1 단부와 수직 방향에서 중첩되는, 제1 피드;
상기 제1 피드가 연장되는 방향과 반대 방향으로 연장되는 제2 피드;
수평 방향으로 그리고 길이 방향으로 연장되는 제3 피드로서, 상기 제3 피드의 적어도 일부는 상기 브릿지의 제2 단부와 수직 방향에서 중첩되는, 제3 피드; 및
상기 제3 피드가 연장되는 방향과 반대 방향으로 연장되는 제4 피드를 포함하고,
상기 기판 처리 장치의 상기 플라즈마 공급부는,
상기 반시계 방향 연장부와 상기 제1 피드 및 상기 제2 피드를 연결하는 제1 분기점(first split point); 및
상기 시계 방향 연장부와 상기 제3 피드 및 상기 제4 피드를 연결하는 제2 분기점(second split point)을 더 포함하고,
상기 반시계 방향 연장부를 통해 흐르는 제1 전류는 상기 제1 피드를 통해 흐르는 제2 전류의 방향과 반대 방향으로 흐르고,
상기 시계 방향 연장부를 통해 흐르는 제3 전류는 상기 제3 피드를 통해 흐르는 제4 전류의 방향과 반대 방향으로 흐르며,
상기 제1 전류 및 상기 제3 전류에 의해 제1 유도 신호 성분이 생성되고, 상기 제2 전류 및 상기 제4 전류에 의해 제2 유도 신호 성분이 생성되며,
상기 그라운드 쉴드는 상기 제1 유도 신호 성분 및 상기 제2 유도 신호 성분을 방전하도록 구성되고,
상기 기체 유입구는 상기 반응기의 상부에 연결된 상기 복수의 피드들 사이에 배치되며,
상기 브릿지는 상기 반시계 방향 연장부 및 상기 시계 방향 연장부를 통해 상기 기체 유입구를 둘러싸며,
상기 제1 피드, 상기 제2 피드, 상기 제3 피드, 및 상기 제4 피드는 상기 브릿지를 통해 상기 RF 로드에 연결되는 것을 특징으로 하는, 기판 처리 장치. - 삭제
- 삭제
- 청구항 7에 있어서,
상기 피드들과 상기 기체 공급수단을 전기적으로 연결하는 복수개의 피드 RF 로드;를 더 포함하며 상기 피드들 및 피드 RF 로드들은 상기 기체 유입구를 중심으로 대칭적으로 배치된 것;을 특징으로 하는 기판 처리 장치. - 플라즈마 공급부를 포함하는 기판 처리 장치로서,
상기 플라즈마 공급부는,
RF 로드(main RF rod);
상기 RF 로드와 연결되고 아치 형상을 갖는 브릿지(bridge)로서, 상기 브릿지는 반시계 방향 연장부 및 시계 방향 연장부를 포함하는, 브릿지;
복수개의 피드들(RF feeds); 및
상기 브릿지 및 상기 복수개의 피드들 사이에 배치된 그라운드 쉴드;를 포함하며, 상기 플라즈마 공급부는 반응기의 상부와 연결되고,
상기 복수의 피드들은,
수평 방향으로 그리고 길이 방향으로 연장되는 제1 피드로서, 상기 제1 피드의 적어도 일부는 상기 브릿지의 제1 단부와 수직 방향에서 중첩되는, 제1 피드;
상기 제1 피드가 연장되는 방향과 반대 방향으로 연장되는 제2 피드;
수평 방향으로 그리고 길이 방향으로 연장되는 제3 피드로서, 상기 제3 피드의 적어도 일부는 상기 브릿지의 제2 단부와 수직 방향에서 중첩되는, 제3 피드; 및
상기 제3 피드가 연장되는 방향과 반대 방향으로 연장되는 제4 피드를 포함하고,
상기 기판 처리 장치는,
상기 반시계 방향 연장부와 상기 제1 피드 및 상기 제2 피드를 연결하는 제1 분기점(first split point); 및
상기 시계 방향 연장부와 상기 제3 피드 및 상기 제4 피드를 연결하는 제2 분기점(second split point)을 포함하고,
상기 반시계 방향 연장부를 통해 흐르는 제1 전류는 상기 제1 피드를 통해 흐르는 제2 전류의 방향과 반대 방향으로 흐르고,
상기 시계 방향 연장부를 통해 흐르는 제3 전류는 상기 제3 피드를 통해 흐르는 제4 전류의 방향과 반대 방향으로 흐르며,
상기 제1 전류 및 상기 제3 전류에 의해 제1 유도 신호 성분이 생성되고, 상기 제2 전류 및 상기 제4 전류에 의해 제2 유도 신호 성분이 생성되며,
상기 그라운드 쉴드는 상기 제1 유도 신호 성분 및 상기 제2 유도 신호 성분을 방전하도록 구성되고,
상기 기판 처리 장치는 상기 반응기의 상부에 연결된 상기 복수의 피드들 사이에 배치된 기체 유입구를 더 포함하며,
상기 기체 유입구는 상기 반응기 내에 위치된 기판 지지부에 대해 수직이며 상기 기판 지지부의 중심에 배치되고,
상기 브릿지는 상기 반시계 방향 연장부 및 상기 시계 방향 연장부를 통해 상기 기체 유입구를 둘러싸며,
상기 제1 피드, 상기 제2 피드, 상기 제3 피드, 및 상기 제4 피드는 상기 브릿지를 통해 상기 RF 로드에 연결된 것을 특징으로 하는 기판 처리 장치. - 청구항 11에 있어서,
상기 RF 로드와 상기 브릿지는 서로 연결되며;
상기 브릿지와 상기 복수개의 피드들은 상기 제1 분기점(first split point) 및 상기 제2 분기점(second split point)에서 서로 연결되며,
RF 전류는 상기 RF 로드, 상기 브릿지, 상기 제1 분기점, 상기 제2 분기점, 및 상기 복수개의 피드들을 통해 상기 반응기로 공급되는 것을 특징으로 하는 기판 처리 장치. - 청구항 12에 있어서,
상기 복수개의 피드들은 상기 기판 처리 장치의 중심을 기준으로 대칭적으로 배치된 것을 특징으로 하는 기판 처리 장치. - 청구항 11에 있어서,
상기 그라운드 쉴드는 금속으로 이루어진 것을 특징으로 하는 기판 처리 장치. - 청구항 14에 있어서,
상기 그라운드 쉴드는 알루미늄으로 이루어진 것을 특징으로 하는 기판 처리 장치. - 청구항 11에 있어서,
상기 그라운드 쉴드는 상기 브릿지와 상기 피드들 사이에 형성되는 크로스토크(cross-talk)를 방지하는 것을 특징으로 하는 기판 처리 장치. - 청구항 11에 있어서,
60MHz의 이상의 주파수를 갖는 플라즈마를 생성하는 플라즈마 생성부를 더 포함하는 것을 특징으로 하는 기판 처리 장치. - 청구항 11에 있어서,
상기 그라운드 쉴드는 제1 패널 및 제2 패널을 포함하고,
상기 제1 패널과 상기 제2 패널을 상기 기체 유입구의 양 측면에 배치하고 상기 제1 패널 및 상기 제2 패널을 조립함으로써 상기 기체 유입구를 둘러싸는 그라운드 쉴드 구조가 형성되는 것을 특징으로 하는 기판 처리 장치. - 청구항 11에 있어서,
상기 복수개의 피드들과 상기 반응기 상부를 전기적으로 연결하는 복수개의 피드 RF 로드들;을 더 포함하며 상기 피드들과 상기 피드 RF로드들은 상기 반응기상부의 중심을 기준으로 대칭적으로 배치된 것;을 특징으로 하는 기판 처리 장치.
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| US11069510B2 (en) | 2021-07-20 |
| CN109427533A (zh) | 2019-03-05 |
| KR20190023920A (ko) | 2019-03-08 |
| CN109427533B (zh) | 2021-09-07 |
| TWI719333B (zh) | 2021-02-21 |
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