Movatterモバイル変換


[0]ホーム

URL:


KR101111063B1 - Apparatus for joining of substrate - Google Patents

Apparatus for joining of substrate
Download PDF

Info

Publication number
KR101111063B1
KR101111063B1KR1020080138517AKR20080138517AKR101111063B1KR 101111063 B1KR101111063 B1KR 101111063B1KR 1020080138517 AKR1020080138517 AKR 1020080138517AKR 20080138517 AKR20080138517 AKR 20080138517AKR 101111063 B1KR101111063 B1KR 101111063B1
Authority
KR
South Korea
Prior art keywords
chamber
upper chamber
substrate
support
screw
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR1020080138517A
Other languages
Korean (ko)
Other versions
KR20100079920A (en
Inventor
황재석
Original Assignee
엘아이지에이디피 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 엘아이지에이디피 주식회사filedCritical엘아이지에이디피 주식회사
Priority to KR1020080138517ApriorityCriticalpatent/KR101111063B1/en
Publication of KR20100079920ApublicationCriticalpatent/KR20100079920A/en
Application grantedgrantedCritical
Publication of KR101111063B1publicationCriticalpatent/KR101111063B1/en
Expired - Fee Relatedlegal-statusCriticalCurrent
Anticipated expirationlegal-statusCritical

Links

Images

Classifications

Landscapes

Abstract

Translated fromKorean

하나의 구동부에 의해 챔버의 개폐와 두 기판의 간격조절을 함께 수행되도록 한 기판합착장치가 개시된다. 기판합착장치는 하부기판을 지지하는 하부챔버;상기 하부챔버와 함께 처리공간을 제공하며, 상기 하부챔버로부터 분리 가능한 상부챔버;상기 상부챔버의 내측에 배치되어 상기 상부챔버로부터 이격되며, 상부기판을 지지하는 상정반;상기 상부챔버의 외측에 배치되어 상기 상부챔버로부터 이격되며, 상기 상부챔버를 관통하여 상기 상정반을 지지하는 상정반지지부;및 상기 상부챔버를 승강시켜 상기 처리공간을 개폐시키며, 상기 상정반지지부를 승강시켜 상기 하부기판에 대한 상기 상부기판의 간격을 조절하는 구동부;를 포함한다.Disclosed is a substrate bonding apparatus for performing opening and closing of a chamber and adjusting a distance between two substrates by one driving unit. The substrate bonding apparatus may include: a lower chamber supporting a lower substrate; an upper chamber providing a processing space together with the lower chamber, the upper chamber being detachable from the lower chamber; disposed inside the upper chamber and spaced apart from the upper chamber, An upper support plate disposed outside the upper chamber and spaced apart from the upper chamber to support the upper plate through the upper chamber; and opening and closing the upper and lower chambers to open and close the processing space. And a driving unit for elevating the upper support unit to adjust a distance between the upper substrate and the lower substrate.

Description

Translated fromKorean
기판합착장치{Apparatus for joining of substrate}Apparatus for joining of substrate}

본 발명은 기판합착장치에 관한 것으로, 더욱 상세하게는 두 기판을 합착하는 기판합착장치에 관한 것이다.The present invention relates to a substrate bonding apparatus, and more particularly to a substrate bonding apparatus for bonding two substrates.

정보화 사회가 발전함에 따라 디스플레이 장치에 대한 요구도 다양한 형태로 증가되어 왔다. 이에 근래에는 LCD(Lipuid Crystal Display Device), PDP(Plasma Display Panel), ELD(Electro Luminescent Display), VFD(Vacuum Fluorescent Display)등 여러 가지 평판 디스플레이 장치가 연구되어 왔고 그 일부는 이미 실생활에 널리 사용되고 있다.As the information society has developed, the demand for display devices has increased in various forms. Recently, various flat panel display devices such as LCD (Lipuid Crystal Display Device), PDP (Plasma Display Panel), ELD (Electro Luminescent Display), VFD (Vacuum Fluorescent Display) have been studied and some of them are widely used in real life. .

그 중 LCD의 경우에는 CRT(Cathode Ray Tube)에 비하여 화질이 우수하고 경량, 박형, 저소비 전력의 특징에 따른 장점으로 인하여 이동형 화상 표시장치의 용도로 많이 사용되고 있다.Among them, LCDs are being used for mobile image display devices because of their excellent image quality compared to CRT (Cathode Ray Tube) and the advantages of light weight, thinness, and low power consumption.

이러한 LCD는 전극이 형성되어 있는 TFT(Thin Film Transistor) 기판과 형광체가 도포된 CF(Color filter) 기판 사이에 액정(Liquid Crystal)을 주입하여 형성된다. 두 기판 사이에는 소정 간격으로 두 기판 사이의 간격을 유지하기 위한 간격재(Spacer)가 배치되며, 두 기판의 외주면에는 액정 물질을 누출을 막기 위한 밀봉 재(Sealer)가 배치된다.The LCD is formed by injecting a liquid crystal between a TFT (Thin Film Transistor) substrate on which an electrode is formed and a CF (Color filter) substrate coated with phosphors. Spacers are disposed between the two substrates to maintain a gap between the two substrates at predetermined intervals, and a sealer is disposed on the outer circumferential surfaces of the two substrates to prevent leakage of the liquid crystal material.

따라서 LCD를 제조함에 있어서, TFT기판 및 CF 기판을 각각 제조한 후에 양 기판을 합착하고 그 사이의 공간에 액정 물질을 주입하는 공정이 필수적으로 필요하며 이중 기판을 합착시키는 공정은 LCD의 품질을 결정하는 중요한 공정 중에 하나이다.Therefore, in manufacturing LCD, after manufacturing TFT substrate and CF substrate, it is necessary to join both substrates and inject liquid crystal material into the space between them, and the process of bonding double substrates determines the quality of LCD. Is one of the important processes.

일반적인 기판합착장치는 진공이 형성되는 챔버의 내부에서 두 기판의 합착 공정을 수행한다. 챔버는 상부챔버와 하부챔버로 분리되며, 상부챔버와 하부챔버 중 어느 하나를 승강시켜 두 기판을 반입, 또는 반출시키도록 구성된다. 따라서 두 챔버 중 어느 하나를 승강시키기 위한 개폐 구동부가 마련되어야 한다.A general substrate bonding apparatus performs a bonding process of two substrates in a chamber in which a vacuum is formed. The chamber is divided into an upper chamber and a lower chamber, and is configured to elevate either one of the upper chamber and the lower chamber to bring in or take out two substrates. Therefore, the opening and closing drive unit for lifting up and down either chamber should be provided.

또한 챔버 내부에서 두 기판의 정렬을 위해 두 기판의 간격조절이 필요하다. 따라서 개폐 구동부와는 별도로 두 기판 중 어느 하나를 승강시키는 간격조절 구동부가 마련되어야 한다.It is also necessary to adjust the spacing of the two substrates to align the two substrates in the chamber. Therefore, apart from the opening and closing drive unit, a spacing control unit for lifting one of the two substrates should be provided.

하지만, 종래의 기판합착장치는 챔버의 개폐와 두 기판의 간격조절을 위한 구동계가 각각 별도로 마련된다. 이에 따라 초기설비 투자비용이 증가되는 문제점이 있다.However, the conventional substrate bonding apparatus is provided with a drive system for opening and closing the chamber and adjusting the distance between the two substrates. Accordingly, there is a problem in that the initial investment cost increases.

또한 종래의 기판합착장치는 챔버와 기판을 별도의 구동부에 의해 지지하므로, 두 기판의 정렬이 번거로우며, 정렬오차가 발생되는 문제점이 있다.In addition, since the conventional substrate bonding apparatus supports the chamber and the substrate by separate driving units, the alignment of the two substrates is cumbersome, and there is a problem that alignment errors occur.

본 발명의 목적은 하나의 구동부에 의해 챔버의 개폐와 두 기판의 간격조절 을 함께 수행되도록 한 기판합착장치를 제공하기 위한 것이다.An object of the present invention is to provide a substrate bonding apparatus to perform the opening and closing of the chamber and the control of the distance between the two substrates by one drive unit.

기판합착장치는 하부기판을 지지하는 하부챔버;상기 하부챔버와 함께 처리공간을 제공하며, 상기 하부챔버로부터 분리 가능한 상부챔버;상기 상부챔버의 내측에 배치되어 상기 상부챔버로부터 이격되며, 상부기판을 지지하는 상정반;상기 상부챔버의 외측에 배치되어 상기 상부챔버로부터 이격되며, 상기 상부챔버를 관통하여 상기 상정반을 지지하는 상정반지지부;및 상기 상부챔버를 승강시켜 상기 처리공간을 개폐시키며, 상기 상정반지지부를 승강시켜 상기 하부기판에 대한 상기 상부기판의 간격을 조절하는 구동부;를 포함한다.The substrate bonding apparatus may include: a lower chamber supporting a lower substrate; an upper chamber providing a processing space together with the lower chamber, the upper chamber being detachable from the lower chamber; disposed inside the upper chamber and spaced apart from the upper chamber, An upper support plate disposed outside the upper chamber and spaced apart from the upper chamber to support the upper plate through the upper chamber; and opening and closing the upper and lower chambers to open and close the processing space. And a driving unit for elevating the upper support unit to adjust a distance between the upper substrate and the lower substrate.

상기 구동부는 회전동력을 제공하는 구동모터;상기 하부챔버와 상기 상부챔버를 관통하여 상기 상정반지지부에 나사결합되며, 상기 구동모터에 의해 회전되어 상기 상정반지지부를 승강시키는 스크류;상기 상부챔버의 하부에 배치되어 상기 스크류에 나사결합되며, 상기 스크류의 회전에 따라 상기 상부챔버를 지지하여 상기 스크류의 회전에 따라 상기 상부챔버를 승강시키는 상기 승강부재;및 상기 하부챔버에 고정되고, 상기 승강부재, 상기 상부챔버 및 상기 상정반지지부를 관통하며, 상기 상부챔버와 상기 승강부재의 승강을 안내하는 승강가이드;를 더 포함할 수 있다.A driving motor providing rotational power; a screw coupled to the upper support part through the lower chamber and the upper chamber, the screw being rotated by the driving motor to elevate the upper support part; An elevating member disposed below and screwed to the screw and supporting the upper chamber according to the rotation of the screw to elevate the upper chamber according to the rotation of the screw; and fixed to the lower chamber, and the elevating member And an elevating guide penetrating the upper chamber and the upper support plate and guiding elevating the upper chamber and the elevating member.

상기 구동부는 상기 상부챔버와 상기 승강부재의 사이에 배치되는 완충부재를 더 포함할 수 있다.The driving unit may further include a buffer member disposed between the upper chamber and the lifting member.

상기 기판합착장치는 상기 하부챔버와 상기 상부챔버의 사이에 배치되는 제1 기밀부재를 더 포함할 수 있다.The substrate bonding apparatus may further include a first hermetic member disposed between the lower chamber and the upper chamber.

상기 상정반지지부는 상기 상부챔버의 상측에 배치되며, 상기 구동부에 의해 승강되는 지지판;및 상기 지지판으로부터 연장되며, 상기 상부챔버를 관통하여 상기 상정반에 체결되는 지지축을 포함할 수 있다.The upper support part may be disposed on an upper side of the upper chamber, and may include a support plate that is lifted by the driving unit; and a support shaft extending from the support plate and fastened to the upper plate by passing through the upper chamber.

상기 기판합착장치는 상기 지지판과 상기 상부챔버의 사이에 배치되는 제2 기밀부재를 더 포함할 수 있다.The substrate bonding apparatus may further include a second hermetic member disposed between the support plate and the upper chamber.

상기 기판합착장치는 상기 하부챔버를 지지하는 프레임;및 상기 프레임에 지지되며, 상기 구동부를 평면 상에서 이동시키는 정렬스테이지를 더 포함할 수 있다.The substrate bonding apparatus may further include a frame supporting the lower chamber, and an alignment stage supported by the frame and moving the driving unit on a plane.

상기 기판합착장치는 상기 상정반이 승강되는 경로에 배치되며, 상기 상정반의 위치를 감지하여 상기 하부기판과 상기 상부기판의 간격을 측정할 수 있도록 하는 간격감지기를 더 포함할 수 있다.The substrate bonding apparatus may further include a gap detector disposed on a path in which the upper plate is lifted and detecting a position of the upper plate to measure a distance between the lower substrate and the upper substrate.

본 발명에 따른 기판합착장치는 하나의 구동부에 의해 챔버의 개폐와 두 기판의 간격을 조절하므로, 초기 설비투자비용이 절감되며, 두 기판의 정렬오차를 줄일 수 있는 효과가 있다.Since the substrate bonding apparatus according to the present invention controls the opening and closing of the chamber and the distance between the two substrates by one driving unit, the initial equipment investment cost is reduced and the alignment error of the two substrates can be reduced.

이하, 본 실시예에 따른 기판합착장치에 대해 첨부된 도면을 참조하여 상세히 설명하도록 한다.Hereinafter, the substrate bonding apparatus according to the present embodiment will be described in detail with reference to the accompanying drawings.

도 1은 본 실시예에 따른 기판합착장치를 나타낸 사시도이고, 도 2는 본 실 시예에 따른 기판합착장치를 나타낸 단면도이다. 도 1 및 도 2를 참조하면, 기판합착장치는 프레임(110), 정렬스테이지(120), 하부챔버(131), 하정반(132), 상부챔버(135), 상정반(136), 상정반지지부(140) 및 구동부(150)를 포함한다.1 is a perspective view showing a substrate bonding apparatus according to the present embodiment, Figure 2 is a cross-sectional view showing a substrate bonding apparatus according to the present embodiment. 1 and 2, the substrate bonding apparatus includes aframe 110, analignment stage 120, alower chamber 131, alower plate 132, anupper chamber 135, anupper plate 136, and an upper ring. Thebranch 140 and thedriving unit 150 is included.

프레임(110)은 복수로 마련되어 정렬스테이지(120)와 하부챔버(131)의 테두리부에 배치된다.Theframe 110 is provided in plural and disposed at the edge of thealignment stage 120 and thelower chamber 131.

정렬스테이지(120)는 프레임(110)의 내측에 배치되어 프레임(110)에 지지된다. 정렬스테이지(120)는 구동부(150)를 지지하며, 구동부(150)를 도 1에 표기된 x축방향 및 y축방향으로 이동시킨다. 이러한 정렬스테이지(120)는 본 출원인에 의해 출원되어 공개된 "공개번호 10-2006-0055703;기판 합착기"에 개시된 바 있으므로, 상세한 설명은 생략하도록 한다.Thealignment stage 120 is disposed inside theframe 110 and is supported by theframe 110. Thealignment stage 120 supports thedriving unit 150 and moves thedriving unit 150 in the x-axis direction and the y-axis direction shown in FIG. 1. Since thealignment stage 120 has been disclosed in the "Publication No. 10-2006-0055703 (substrate bonding machine)" filed and published by the applicant, detailed description thereof will be omitted.

하부챔버(131)는 정렬스테이지(120)의 상측에 배치되어 프레임(110)에 지지된다. 하정반(132)은 하부챔버(131)의 내측에 배치되며, 하부챔버(131)에 지지된다. 하정반(132)은 챔버(130)의 내부로 반입되는 하부기판(S1)을 지지한다.Thelower chamber 131 is disposed above thealignment stage 120 and supported by theframe 110. Thelower plate 132 is disposed inside thelower chamber 131 and is supported by thelower chamber 131. Thelower surface plate 132 supports the lower substrate S1 carried into thechamber 130.

상부챔버(135)는 하부챔버(131)의 상측에 배치되며, 하부챔버(131)와 함께 처리공간을 제공한다. 상부챔버(135)는 처리공간(130a)의 개방시 구동부(150)에 의해 지지되고, 처리공간(130a)의 밀폐시 하부챔버(131)에 지지된다. 상정반(136)은 상부챔버(135)의 내측에 배치되며, 상부챔버(135)로부터 이격된다. 도시되지 않았지만 하정반(132) 및 상정반(136)은 기판을 지지하는 진공척, 정전척, 마그네틱척 중 어느 하나를 각각 포함할 수 있다.Theupper chamber 135 is disposed above thelower chamber 131 and provides a processing space together with thelower chamber 131. Theupper chamber 135 is supported by thedriving unit 150 when theprocessing space 130a is opened, and is supported by thelower chamber 131 when theprocessing space 130a is closed. Theupper surface plate 136 is disposed inside theupper chamber 135 and spaced apart from theupper chamber 135. Although not shown, thelower plate 132 and theupper plate 136 may each include any one of a vacuum chuck, an electrostatic chuck, and a magnetic chuck supporting the substrate.

하정반(132)과 상정반의 사이에는 간격감지기(133)가 배치된다. 간격감지 기(133)는 두 기판(S1, S2)의 개략 정렬 이후 두 기판(S1, S2)의 정밀 정렬을 위한 두 기판(S1, S2)의 간격을 감지한다. 간격감지기(133)는 상정반의 승강에 따라 상정반(136)에 접촉되어 접촉신호를 발생시킨다. 이 접촉신호는 이후 설명될 구동모터(151)의 제어신호로 사용된다. 여기서, 도 1 내지 도 2에서는 간격감지기(133)를 접촉식 센서로 도시하고 설명하고 있으나, 다른 실시예로 비접촉식 센서로 채택될 수 있다.Thegap detector 133 is disposed between thelower plate 132 and the upper plate. Thegap detector 133 detects a gap between the two substrates S1 and S2 for precise alignment of the two substrates S1 and S2 after the rough alignment of the two substrates S1 and S2. Thegap sensor 133 is in contact with theupper plate 136 in accordance with the lifting of the upper plate to generate a contact signal. This contact signal is used as a control signal of thedrive motor 151 to be described later. Here, in FIGS. 1 and 2, thegap sensor 133 is illustrated and described as a contact sensor, but may be adopted as a non-contact sensor in another embodiment.

상정반지지부(140)는 지지판(141)과 지지축(142)을 포함한다. 지지판(141)은 상부챔버(135)의 외측에 배치되며, 상부챔버(135)로부터 이격된다. 지지축(142)은 지지판(141)으로부터 연장되고, 상부챔버(135)를 관통하여 상정반(136)에 체결된다.The upperhalf support part 140 includes asupport plate 141 and asupport shaft 142. Thesupport plate 141 is disposed outside theupper chamber 135 and spaced apart from theupper chamber 135. Thesupport shaft 142 extends from thesupport plate 141 and is fastened to theupper plate 136 through theupper chamber 135.

구동부(150)는 상부챔버(135)를 승강시켜 처리공간(130a)을 개폐시키며, 상정반지지부(140)를 승강시켜 하부기판(S1)에 대한 상부기판(S2)의 간격을 조절한다. 이러한 구동부(150)는 구동모터(151), 스크류(152), 승강부재(153) 및 승강가이드(154)를 포함한다.Thedriving unit 150 raises and lowers theupper chamber 135 to open and close theprocessing space 130a, and raises and lowers theupper support unit 140 to adjust the distance of the upper substrate S2 to the lower substrate S1. Thedriving unit 150 includes adriving motor 151, ascrew 152, alifting member 153, and alifting guide 154.

구동모터(151)는 정렬스테이지(120)에 지지되며, 회전동력을 제공한다. 구동모터는 정회전 및 역회전이 가능하도록 마련된다.Thedrive motor 151 is supported by thealignment stage 120 and provides a rotational power. The drive motor is provided to enable forward and reverse rotation.

스크류(152)는 하부챔버(131)와 상부챔버(135)를 관통하며, 지지판(141)에 나사결합되어 지지판(141)을 지지한다. 스크류(152)는 구동모터(151)에 의해 회전되어 지지판(141)을 승강시킨다. 스크류(152)는 구동모터(151)의 정회전에 따라 정회전되어 지지판(141)을 상승시키며, 구동모터(151)의 역회전에 따라 역회전되어 지지판(141)을 하강시킨다.Thescrew 152 penetrates thelower chamber 131 and theupper chamber 135 and is screwed to thesupport plate 141 to support thesupport plate 141. Thescrew 152 is rotated by thedrive motor 151 to elevate thesupport plate 141. Thescrew 152 is rotated forward according to the forward rotation of thedrive motor 151 to raise thesupport plate 141, and is reversely rotated according to the reverse rotation of thedrive motor 151 to lower thesupport plate 141.

승강부재(153)는 상부챔버(135)의 하측에 배치되어 스크류(152)에 나사결합된다. 승강부재(153)는 스크류(152)의 회전에 따라 승강된다. 승강부재(153)는 스크류(152)의 정회전시 상승되어 상부챔버(135)를 지지하여 상부챔버(135)를 상승시키며, 스크류(152)의 역회전시 하강되어 상부챔버(135)를 하부챔버(131) 측으로 하강시킨다.Theelevating member 153 is disposed below theupper chamber 135 and screwed to thescrew 152. Theelevating member 153 is elevated by the rotation of thescrew 152. Theelevating member 153 is raised during forward rotation of thescrew 152 to support theupper chamber 135 to raise theupper chamber 135, and is lowered during reverse rotation of thescrew 152 to lower theupper chamber 135. Lower to (131) side.

승강부재(153)와 상부챔버(135)의 사이에는 완충부재(155)가 배치된다. 완충부재(155)는 스크류(152)의 회전에 따라 서로 접촉되는 상부챔버(135)와 승강부재(153)에 발생될 수 있는 충격을 완화시키며, 상부챔버(135) 및 승강부재(153)의 마모를 방지한다.Abuffer member 155 is disposed between theelevating member 153 and theupper chamber 135. Theshock absorbing member 155 mitigates the shock that may occur in theupper chamber 135 and theelevating member 153 which are in contact with each other according to the rotation of thescrew 152, and theupper chamber 135 and theelevating member 153 Prevent wear.

승강가이드(154)는 하부챔버(131)에 고정되며, 승강부재(153), 상부챔버(135) 및 상정반지지부(140)를 관통한다. 승강가이드(154)는 스크류(152)에 나사결합된 상부챔버(135) 및 승강부재(153)가 스크류(152)의 회전에 따라 회전되지 않도록 하며, 상부챔버(135)와 승강부재(153)의 승강을 안내한다.Thelifting guide 154 is fixed to thelower chamber 131 and penetrates thelifting member 153, theupper chamber 135, and theupper support part 140. The elevatingguide 154 prevents theupper chamber 135 and the elevatingmember 153 screwed to thescrew 152 from being rotated according to the rotation of thescrew 152, and theupper chamber 135 and the elevatingmember 153. Guide your ascent to and from.

한편, 하부챔버(131)와 상부챔버(135)의 사이에는 처리공간(130a)의 밀폐시 하부챔버(131)와 상부챔버(135)의 사이로 처리공간(130a)의 기밀이 새어나가는 것을 방지하는 제1 기밀부재(134)가 배치된다. 제1 기밀부재(134)로는 오-링이 사용된다.Meanwhile, between thelower chamber 131 and theupper chamber 135 to prevent leakage of the airtightness of theprocessing space 130a between thelower chamber 131 and theupper chamber 135 when theprocessing space 130a is closed. The firsthermetic member 134 is disposed. An o-ring is used as the firsthermetic member 134.

또한, 지지판(141)과 상부챔버(135)의 사이에는 처리공간(130a)의 밀폐시 지지축(142)이 관통되는 관통홀(142a)로부터 처리공간(130a)의 기밀이 새어나가는 것 을 방지하는 제2 기밀부재(137)가 배치된다. 제2 기밀부재(137)로는 벨로우즈가 사용된다.In addition, between the supportingplate 141 and theupper chamber 135 to prevent leakage of the airtightness of theprocessing space 130a from the through hole 142a through which thesupport shaft 142 penetrates when theprocessing space 130a is closed. The secondhermetic member 137 is disposed. Bellows are used as the secondhermetic member 137.

도시되지 않았지만, 하부기판(S1)과 상부기판(S2)에는 두 기판(S1, S2)의 정렬을 위한 얼라인마크가 각각 형성되어 제공될 수 있으며, 기판합착장치는 두 얼라인마크의 일치여부를 촬영하는 카메라를 포함할 수 있다. 이러한 얼라인마크 및 카메라는 이미 공지된 기술이므로 상세한 설명은 생략하도록 한다.Although not shown, an alignment mark for aligning the two substrates S1 and S2 may be provided on the lower substrate S1 and the upper substrate S2, respectively, and the substrate bonding apparatus may be aligned with the two alignment marks. It may include a camera for photographing. Since the alignment mark and the camera are already known technologies, detailed descriptions thereof will be omitted.

이하, 본 실시예에 따른 기판처리장치의 작동에 대해 첨부된 도면을 참조하여 상세히 설명하도록 한다.Hereinafter, the operation of the substrate treating apparatus according to the present embodiment will be described in detail with reference to the accompanying drawings.

도 3은 본 실시예에 따른 기판처리장치에서 처리공간이 개방된 상태를 나타낸 부분단면도이다. 도 3을 참조하면, 상부챔버(135)는 승강부재(153)에 지지되어 하부챔버(131)로부터 이격된다. 상부챔버(135)가 하부챔버(131)로부터 이격됨에 따라 처리공간(130a)은 개방된다. 개방된 처리공간(130a)으로 하부기판(S1)과 상부기판(S2)이 반입된다. 하부기판(S1)은 하정반(132)에 지지되고 상부기판(S2)은 상정반(136)에 지지되어 서로 대향한다.3 is a partial cross-sectional view showing a state in which a processing space is opened in the substrate processing apparatus according to the present embodiment. Referring to FIG. 3, theupper chamber 135 is supported by the elevatingmember 153 and spaced apart from thelower chamber 131. As theupper chamber 135 is spaced apart from thelower chamber 131, theprocessing space 130a is opened. The lower substrate S1 and the upper substrate S2 are loaded into theopen processing space 130a. The lower substrate S1 is supported by thelower plate 132 and the upper substrate S2 is supported by theupper plate 136 to face each other.

도 4는 본 실시예에 따른 기판처리장치의 처리공간 밀폐 작동을 나타낸 부분단면도이다. 도 4를 참조하면, 처리공간(130a)의 밀폐를 위해 구동모터(151)는 스크류(152)를 역회전시킨다. 스크류(152)가 역회전됨에 따라 지지판(141)과 승강부재(153)는 함께 하강한다. 이때 승강가이드(154)는 지지판(141)과 승강부재(153)의 회전을 방지하며, 지지판(141)과 승강부재(153)의 하강을 안내한다.4 is a partial sectional view showing a process space sealing operation of the substrate processing apparatus according to the present embodiment. Referring to FIG. 4, thedrive motor 151 reversely rotates thescrew 152 to seal theprocessing space 130a. As thescrew 152 is reversely rotated, thesupport plate 141 and the liftingmember 153 are lowered together. In this case, the liftingguide 154 prevents thesupport plate 141 and the liftingmember 153 from rotating, and guides the lowering of thesupport plate 141 and the liftingmember 153.

승강부재(153)에 지지되는 상부챔버(135)는 승강부재(153)와 함께 하강된다. 상부챔버(135)는 제1 기밀부재(134)에 접촉되며, 하부챔버(131)에 의해 지지된다. 이와 같이 상부챔버(135)의 하강에 따라 처리공간(130a)은 밀폐되며 제1 기밀부재(134)는 처리공간(130a)의 기밀을 유지시킨다.Theupper chamber 135 supported by the elevatingmember 153 is lowered together with the elevatingmember 153. Theupper chamber 135 is in contact with the firsthermetic member 134 and is supported by thelower chamber 131. As theupper chamber 135 descends as described above, theprocessing space 130a is sealed and the firstairtight member 134 maintains the airtightness of theprocessing space 130a.

처리공간(130a)이 밀폐되면 두 기판(S1, S2)의 개략 정렬이 이루어진다. 즉, 카메라(미도시)는 두 얼라인마크(미도시)의 일치 여부를 촬영한다. 카메라(미도시)의 촬영결과에 따라 정렬스테이지(120)는 구동부(150)를 평면 상(x축방향 또는, y축방향)으로 이동시킨다. 구동부(150)의 위치가 이동됨에 따라 스크류(152)에 지지되는 지지판(141)의 위치가 이동되고, 지지판(141)의 위치가 이동됨에 따라 지지축(142)에 의해 지지되는 상정반(136)의 위치가 이동된다.When theprocessing space 130a is sealed, the two substrates S1 and S2 are roughly aligned. That is, the camera (not shown) photographs whether two alignment marks (not shown) coincide. According to the photographing result of the camera (not shown), thealignment stage 120 moves the drivingunit 150 in the plane (x-axis direction or y-axis direction). As the position of thedriving unit 150 is moved, the position of thesupport plate 141 supported by thescrew 152 is moved, and theupper plate 136 supported by thesupport shaft 142 as the position of thesupport plate 141 is moved. ) Position is moved.

이와 같이 상정반(136)의 위치를 조절하여 하정반(132)에 지지되는 하부기판(S1)에 대한 상부기판(S2)의 위치를 조절하여 두 기판을 정렬한다. (이하, 기판 정렬동작)As such, by adjusting the position of theupper plate 136, the two substrates are aligned by adjusting the position of the upper substrate S2 with respect to the lower substrate S1 supported by thelower plate 132. (Hereinafter, substrate alignment operation)

도 5는 본 실시예에 따른 기판처리장치의 기판 간격조절 작동을 나타낸 부분단면도이다. 도 5를 참조하면, 두 기판(S1, S2)의 정밀 정렬을 위해 구동모터(151)는 스크류(152)를 역회전시킨다. 스크류(152)가 역회전됨에 따라 지지판(141)과 승강부재(153)는 함께 하강한다. 이때 승강가이드(154)는 지지판(141)과 승강부재(153)의 회전을 방지하며, 지지판(141)과 승강부재(153)의 하강을 안내한다.5 is a partial cross-sectional view showing a substrate gap adjusting operation of the substrate processing apparatus according to the present embodiment. Referring to FIG. 5, thedrive motor 151 reversely rotates thescrew 152 to precisely align the two substrates S1 and S2. As thescrew 152 is reversely rotated, thesupport plate 141 and the liftingmember 153 are lowered together. In this case, the liftingguide 154 prevents thesupport plate 141 and the liftingmember 153 from rotating, and guides the lowering of thesupport plate 141 and the liftingmember 153.

상부챔버(135)는 하부챔버(131)에 의해 지지된 상태이므로, 승강부재(153)는 하강되어 상부챔버(135)로부터 이격된다. 지지판(141)이 하강됨에 따라 지지 축(142)에 의해 지지되는 상정반(136)은 함께 하강한다. 상정반(136)이 하강됨에 따라 상정반(136)은 하정반(132)에 배치된 간격감지기(133)에 접촉된다. 간격감지기(133)는 접촉신호를 발생하며, 구동모터(151)는 접촉신호의 발생에 따라 회전이 정지된다. 이때 두 기판(S1, S2)의 간격은 수 ㎛ ~ 수백 ㎛ 로 형성된다.Since theupper chamber 135 is supported by thelower chamber 131, the elevatingmember 153 is lowered to be spaced apart from theupper chamber 135. As thesupport plate 141 is lowered, theupper plate 136 supported by thesupport shaft 142 descends together. As theupper plate 136 is lowered, theupper plate 136 is in contact with thegap sensor 133 disposed on thelower plate 132. Thegap sensor 133 generates a contact signal, and the drivingmotor 151 is stopped from rotating according to the generation of the contact signal. At this time, the interval between the two substrates (S1, S2) is formed to a few μm ~ several hundred μm.

이와 같이 두 기판(S1, S2)이 근접하면 상술한 기판 정렬동작에 따라 두 기판의 정밀 정렬이 이루어진다.As such, when the two substrates S1 and S2 are close to each other, precise alignment of the two substrates is performed according to the substrate alignment operation described above.

두 기판(S1, S2)의 정밀 정렬이 이루어지면, 상정반(136)은 상부기판(S2)의 지지상태를 해제한다. 상부기판(S2)은 하부기판(S1)으로 자유낙하하여 하부기판(S1)에 접촉되고, 두 기판(S1, S2)은 합착된다.When the precise alignment of the two substrates (S1, S2) is made, theupper plate 136 releases the support state of the upper substrate (S2). The upper substrate S2 freely falls into the lower substrate S1 to contact the lower substrate S1, and the two substrates S1 and S2 are bonded to each other.

도 6은 본 실시예에 따른 기판처리장치의 처리공간 개방 동작을 나타낸 부분단면도이다. 도 6을 참조하면, 합착된 두 기판(S1, S2)의 반출을 위해 구동모터(151)는 스크류(152)를 정회전시킨다. 스크류(152)가 정회전됨에 따라 지지판(141)과 승강부재(153)는 함께 상승한다. 이때 승강가이드(154)는 지지판(141)과 승강부재(153)의 회전을 방지하며, 지지판(141)과 승강부재(153)의 상승을 안내한다.6 is a partial cross-sectional view showing a processing space opening operation of the substrate processing apparatus according to the present embodiment. Referring to FIG. 6, the drivingmotor 151 rotates thescrew 152 forward to carry out the two bonded substrates S1 and S2. As thescrew 152 is rotated forward, thesupport plate 141 and the liftingmember 153 ascend together. At this time, the liftingguide 154 prevents thesupport plate 141 and the liftingmember 153 from rotating, and guides the rising of thesupport plate 141 and the liftingmember 153.

스크류(152)의 정회전에 의해 상승하는 승강부재(153)는 상부챔버(135)에 접촉된다. 이때 완충부재(155)는 서로 접촉되는 상부챔버(135)와 승강부재(153)에 발생될 수 있는 충격을 완화시키며, 상부챔버(135) 및 승강부재(153)의 마모를 방지한다.The elevatingmember 153 rising by the forward rotation of thescrew 152 is in contact with theupper chamber 135. In this case, theshock absorbing member 155 relieves the shock that may occur in theupper chamber 135 and the liftingmember 153 in contact with each other, and prevents the wear of theupper chamber 135 and the liftingmember 153.

상부챔버(135)에 접촉된 승강부재(153)는 스크류(152)의 정회전에 따라 계속 해서 상승하며, 상부챔버(135)는 승강부재(153)에 지지되어 승강부재(153)와 함께 상승한다. 상부챔버(135)의 상승에 따라 처리공간(130a)은 개방된다.The elevatingmember 153 in contact with theupper chamber 135 continues to rise according to the forward rotation of thescrew 152, and theupper chamber 135 is supported by the elevatingmember 153 to ascend with the elevatingmember 153. . As theupper chamber 135 rises, theprocessing space 130a is opened.

이후, 합착된 두 기판(S1, S2)은 개방된 처리공간(130a)의 외부로 반출된다.Thereafter, the two bonded substrates S1 and S2 are carried out of theopen processing space 130a.

상술한 바와 같이 기판합착장치는 구동부(150)에 의해 처리공간(130a)의 개폐와 두 기판(S1, S2)의 간격조절을 수행할 수 있다.As described above, the substrate bonding apparatus may perform opening / closing of theprocessing space 130a and adjusting spacing between the two substrates S1 and S2 by the drivingunit 150.

도 1은 본 실시예에 따른 기판합착장치를 나타낸 사시도이다.1 is a perspective view showing a substrate bonding apparatus according to the present embodiment.

도 2는 본 실시예에 따른 기판합착장치를 나타낸 단면도이다.2 is a cross-sectional view showing a substrate bonding apparatus according to the present embodiment.

도 3은 본 실시예에 따른 기판처리장치에서 처리공간이 개방된 상태를 나타낸 부분단면도이다.3 is a partial cross-sectional view showing a state in which a processing space is opened in the substrate processing apparatus according to the present embodiment.

도 4는 본 실시예에 따른 기판처리장치의 처리공간 밀폐 작동을 나타낸 부분단면도이다.4 is a partial sectional view showing a process space sealing operation of the substrate processing apparatus according to the present embodiment.

도 5는 본 실시예에 따른 기판처리장치의 기판 간격조절 작동을 나타낸 부분단면도이다.5 is a partial cross-sectional view showing a substrate gap adjusting operation of the substrate processing apparatus according to the present embodiment.

도 6은 본 실시예에 따른 기판처리장치의 처리공간 개방 동작을 나타낸 부분단면도이다.6 is a partial cross-sectional view showing a processing space opening operation of the substrate processing apparatus according to the present embodiment.

<도면의 주요부분에 대한 부호 설명>Description of the Related Art [0002]

110 : 프레임120 : 정렬스테이지110: frame 120: alignment stage

130 : 챔버131 : 하부챔버130: chamber 131: lower chamber

135 : 상부챔버136 : 상정반135: upper chamber 136: upper plate

140 : 상정반지지부141 : 지지판140: upper plate support 141: support plate

142 : 지지축150 : 구동부142: support shaft 150: drive unit

152 : 스크류154 : 승강부재152: screw 154: lifting member

Claims (8)

Translated fromKorean
하부기판을 지지하는 하부챔버;A lower chamber supporting the lower substrate;상기 하부챔버와 함께 처리공간을 제공하며, 상기 하부챔버로부터 분리 가능한 상부챔버;An upper chamber providing a processing space together with the lower chamber, the upper chamber being detachable from the lower chamber;상기 상부챔버의 내측에 배치되어 상기 상부챔버로부터 이격되며, 상부기판을 지지하는 상정반;An upper plate disposed inside the upper chamber, spaced apart from the upper chamber, and supporting the upper substrate;상기 상부챔버의 외측에 배치되어 상기 상부챔버로부터 이격되며, 상기 상부챔버를 관통하여 상기 상정반을 지지하는 상정반지지부;An upper half support part disposed outside the upper chamber and spaced apart from the upper chamber to support the upper half through the upper chamber;상기 하부챔버와 상기 상부챔버를 관통하여 상기 상정반지지부에 나사결합되는 스크류;A screw threaded through the lower chamber and the upper chamber and screwed to the upper support part;상기 스크류를 회전시켜 상기 상정반지지부를 승강시키는 구동모터;A driving motor for rotating the screw to elevate the upper support plate;상기 상부챔버의 하부에 배치되어 상기 스크류에 나사결합되며, 상기 스크류의 회전에 따라 상기 상부챔버를 지지하여 상기 스크류의 회전에 따라 상기 상부챔버를 승강시키는 승강부재;를 포함하는 것을 특징으로 하는 기판합착장치.And an elevating member disposed under the upper chamber and screwed to the screw to support the upper chamber according to the rotation of the screw and to elevate the upper chamber according to the rotation of the screw. Cementing device.제1 항에 있어서,The method according to claim 1,상기 하부챔버에 고정되고, 상기 승강부재, 상기 상부챔버 및 상기 상정반지지부를 관통하며, 상기 상부챔버와 상기 승강부재의 승강을 안내하는 승강가이드를 더 포함하는 것을 특징으로 하는 기판합착장치.And an elevating guide fixed to the lower chamber and penetrating the elevating member, the upper chamber, and the upper half supporting portion to guide the elevating of the upper chamber and the elevating member.제1 항에 있어서, 상기 상부챔버와 상기 승강부재의 사이에 배치되는 완충부재를 더 포함하는 것을 특징으로 하는 기판합착장치.The substrate bonding apparatus of claim 1, further comprising a buffer member disposed between the upper chamber and the elevating member.제1 항에 있어서, 상기 하부챔버와 상기 상부챔버의 사이에 배치되는 제1 기밀부재를 더 포함하는 것을 특징으로 하는 기판합착장치.The substrate bonding apparatus of claim 1, further comprising a first hermetic member disposed between the lower chamber and the upper chamber.제1 항에 있어서, 상기 상정반지지부는The method of claim 1, wherein the support half support portion상기 상부챔버의 상측에 배치되며, 상기 스크류의 회전에 따라 승강되는 지지판;및A support plate disposed on an upper side of the upper chamber and lifted according to the rotation of the screw; and상기 지지판으로부터 연장되며, 상기 상부챔버를 관통하여 상기 상정반에 체결되는 지지축을 포함하는 것을 특징으로 하는 기판합착장치.And a support shaft extending from the support plate and passing through the upper chamber and fastened to the upper plate.제5 항에 있어서, 상기 지지판과 상기 상부챔버의 사이에 배치되는 제2 기밀부재를 더 포함하는 것을 특징으로 하는 기판합착장치.6. The substrate bonding apparatus according to claim 5, further comprising a second hermetic member disposed between the support plate and the upper chamber.제1 항에 있어서,The method according to claim 1,상기 하부챔버를 지지하는 프레임;및A frame supporting the lower chamber; and상기 프레임에 지지되며, 상기 구동모터를 평면 상에서 이동시키는 정렬스테이지를 더 포함하는 것을 특징으로 하는 기판합착장치.And an alignment stage which is supported by the frame and moves the driving motor on a plane.제1 항에 있어서, 상기 상정반이 승강되는 경로에 배치되며, 상기 상정반의 위치를 감지하여 상기 하부기판과 상기 상부기판의 간격을 측정할 수 있도록 하는 간격감지기를 더 포함하는 것을 특징으로 하는 기판합착장치.The substrate of claim 1, further comprising a gap detector disposed on a path in which the upper plate is lifted and detecting a position of the upper plate to measure a distance between the lower substrate and the upper substrate. Cementing device.
KR1020080138517A2008-12-312008-12-31Apparatus for joining of substrateExpired - Fee RelatedKR101111063B1 (en)

Priority Applications (1)

Application NumberPriority DateFiling DateTitle
KR1020080138517AKR101111063B1 (en)2008-12-312008-12-31Apparatus for joining of substrate

Applications Claiming Priority (1)

Application NumberPriority DateFiling DateTitle
KR1020080138517AKR101111063B1 (en)2008-12-312008-12-31Apparatus for joining of substrate

Publications (2)

Publication NumberPublication Date
KR20100079920A KR20100079920A (en)2010-07-08
KR101111063B1true KR101111063B1 (en)2012-02-16

Family

ID=42640957

Family Applications (1)

Application NumberTitlePriority DateFiling Date
KR1020080138517AExpired - Fee RelatedKR101111063B1 (en)2008-12-312008-12-31Apparatus for joining of substrate

Country Status (1)

CountryLink
KR (1)KR101111063B1 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication numberPriority datePublication dateAssigneeTitle
US11728200B2 (en)2019-05-232023-08-15Samsung Electronics Co., Ltd.Wafer bonding apparatuses

Families Citing this family (318)

* Cited by examiner, † Cited by third party
Publication numberPriority datePublication dateAssigneeTitle
US9394608B2 (en)2009-04-062016-07-19Asm America, Inc.Semiconductor processing reactor and components thereof
US8802201B2 (en)2009-08-142014-08-12Asm America, Inc.Systems and methods for thin-film deposition of metal oxides using excited nitrogen-oxygen species
US9312155B2 (en)2011-06-062016-04-12Asm Japan K.K.High-throughput semiconductor-processing apparatus equipped with multiple dual-chamber modules
US10854498B2 (en)2011-07-152020-12-01Asm Ip Holding B.V.Wafer-supporting device and method for producing same
US20130023129A1 (en)2011-07-202013-01-24Asm America, Inc.Pressure transmitter for a semiconductor processing environment
US9017481B1 (en)2011-10-282015-04-28Asm America, Inc.Process feed management for semiconductor substrate processing
US10714315B2 (en)2012-10-122020-07-14Asm Ip Holdings B.V.Semiconductor reaction chamber showerhead
KR101540054B1 (en)*2012-12-282015-07-29엘아이지인베니아 주식회사Method and apparatus for bonding substrates
US20160376700A1 (en)2013-02-012016-12-29Asm Ip Holding B.V.System for treatment of deposition reactor
US10683571B2 (en)2014-02-252020-06-16Asm Ip Holding B.V.Gas supply manifold and method of supplying gases to chamber using same
US10167557B2 (en)2014-03-182019-01-01Asm Ip Holding B.V.Gas distribution system, reactor including the system, and methods of using the same
US11015245B2 (en)2014-03-192021-05-25Asm Ip Holding B.V.Gas-phase reactor and system having exhaust plenum and components thereof
US10858737B2 (en)2014-07-282020-12-08Asm Ip Holding B.V.Showerhead assembly and components thereof
US9890456B2 (en)2014-08-212018-02-13Asm Ip Holding B.V.Method and system for in situ formation of gas-phase compounds
US9657845B2 (en)2014-10-072017-05-23Asm Ip Holding B.V.Variable conductance gas distribution apparatus and method
US10941490B2 (en)2014-10-072021-03-09Asm Ip Holding B.V.Multiple temperature range susceptor, assembly, reactor and system including the susceptor, and methods of using the same
US10276355B2 (en)2015-03-122019-04-30Asm Ip Holding B.V.Multi-zone reactor, system including the reactor, and method of using the same
US10458018B2 (en)2015-06-262019-10-29Asm Ip Holding B.V.Structures including metal carbide material, devices including the structures, and methods of forming same
US10600673B2 (en)2015-07-072020-03-24Asm Ip Holding B.V.Magnetic susceptor to baseplate seal
US10211308B2 (en)2015-10-212019-02-19Asm Ip Holding B.V.NbMC layers
US11139308B2 (en)2015-12-292021-10-05Asm Ip Holding B.V.Atomic layer deposition of III-V compounds to form V-NAND devices
US10529554B2 (en)2016-02-192020-01-07Asm Ip Holding B.V.Method for forming silicon nitride film selectively on sidewalls or flat surfaces of trenches
US10343920B2 (en)2016-03-182019-07-09Asm Ip Holding B.V.Aligned carbon nanotubes
US10865475B2 (en)2016-04-212020-12-15Asm Ip Holding B.V.Deposition of metal borides and silicides
US10190213B2 (en)2016-04-212019-01-29Asm Ip Holding B.V.Deposition of metal borides
US10032628B2 (en)2016-05-022018-07-24Asm Ip Holding B.V.Source/drain performance through conformal solid state doping
US10367080B2 (en)2016-05-022019-07-30Asm Ip Holding B.V.Method of forming a germanium oxynitride film
US11453943B2 (en)2016-05-252022-09-27Asm Ip Holding B.V.Method for forming carbon-containing silicon/metal oxide or nitride film by ALD using silicon precursor and hydrocarbon precursor
US10612137B2 (en)2016-07-082020-04-07Asm Ip Holdings B.V.Organic reactants for atomic layer deposition
US9859151B1 (en)2016-07-082018-01-02Asm Ip Holding B.V.Selective film deposition method to form air gaps
US10714385B2 (en)2016-07-192020-07-14Asm Ip Holding B.V.Selective deposition of tungsten
KR102532607B1 (en)*2016-07-282023-05-15에이에스엠 아이피 홀딩 비.브이.Substrate processing apparatus and method of operating the same
US9887082B1 (en)2016-07-282018-02-06Asm Ip Holding B.V.Method and apparatus for filling a gap
US9812320B1 (en)2016-07-282017-11-07Asm Ip Holding B.V.Method and apparatus for filling a gap
US10643826B2 (en)2016-10-262020-05-05Asm Ip Holdings B.V.Methods for thermally calibrating reaction chambers
US11532757B2 (en)2016-10-272022-12-20Asm Ip Holding B.V.Deposition of charge trapping layers
US10714350B2 (en)2016-11-012020-07-14ASM IP Holdings, B.V.Methods for forming a transition metal niobium nitride film on a substrate by atomic layer deposition and related semiconductor device structures
US10643904B2 (en)2016-11-012020-05-05Asm Ip Holdings B.V.Methods for forming a semiconductor device and related semiconductor device structures
US10229833B2 (en)2016-11-012019-03-12Asm Ip Holding B.V.Methods for forming a transition metal nitride film on a substrate by atomic layer deposition and related semiconductor device structures
US10134757B2 (en)2016-11-072018-11-20Asm Ip Holding B.V.Method of processing a substrate and a device manufactured by using the method
KR102546317B1 (en)2016-11-152023-06-21에이에스엠 아이피 홀딩 비.브이.Gas supply unit and substrate processing apparatus including the same
KR102762543B1 (en)2016-12-142025-02-05에이에스엠 아이피 홀딩 비.브이.Substrate processing apparatus
US11447861B2 (en)2016-12-152022-09-20Asm Ip Holding B.V.Sequential infiltration synthesis apparatus and a method of forming a patterned structure
US11581186B2 (en)2016-12-152023-02-14Asm Ip Holding B.V.Sequential infiltration synthesis apparatus
KR102700194B1 (en)2016-12-192024-08-28에이에스엠 아이피 홀딩 비.브이.Substrate processing apparatus
US10269558B2 (en)2016-12-222019-04-23Asm Ip Holding B.V.Method of forming a structure on a substrate
US10867788B2 (en)2016-12-282020-12-15Asm Ip Holding B.V.Method of forming a structure on a substrate
US11390950B2 (en)2017-01-102022-07-19Asm Ip Holding B.V.Reactor system and method to reduce residue buildup during a film deposition process
US10655221B2 (en)2017-02-092020-05-19Asm Ip Holding B.V.Method for depositing oxide film by thermal ALD and PEALD
US10468261B2 (en)2017-02-152019-11-05Asm Ip Holding B.V.Methods for forming a metallic film on a substrate by cyclical deposition and related semiconductor device structures
US10529563B2 (en)2017-03-292020-01-07Asm Ip Holdings B.V.Method for forming doped metal oxide films on a substrate by cyclical deposition and related semiconductor device structures
USD876504S1 (en)2017-04-032020-02-25Asm Ip Holding B.V.Exhaust flow control ring for semiconductor deposition apparatus
KR102457289B1 (en)2017-04-252022-10-21에이에스엠 아이피 홀딩 비.브이.Method for depositing a thin film and manufacturing a semiconductor device
US10770286B2 (en)2017-05-082020-09-08Asm Ip Holdings B.V.Methods for selectively forming a silicon nitride film on a substrate and related semiconductor device structures
US10892156B2 (en)2017-05-082021-01-12Asm Ip Holding B.V.Methods for forming a silicon nitride film on a substrate and related semiconductor device structures
US12040200B2 (en)2017-06-202024-07-16Asm Ip Holding B.V.Semiconductor processing apparatus and methods for calibrating a semiconductor processing apparatus
US11306395B2 (en)2017-06-282022-04-19Asm Ip Holding B.V.Methods for depositing a transition metal nitride film on a substrate by atomic layer deposition and related deposition apparatus
US10685834B2 (en)2017-07-052020-06-16Asm Ip Holdings B.V.Methods for forming a silicon germanium tin layer and related semiconductor device structures
KR20190009245A (en)2017-07-182019-01-28에이에스엠 아이피 홀딩 비.브이.Methods for forming a semiconductor device structure and related semiconductor device structures
US11374112B2 (en)2017-07-192022-06-28Asm Ip Holding B.V.Method for depositing a group IV semiconductor and related semiconductor device structures
US10541333B2 (en)2017-07-192020-01-21Asm Ip Holding B.V.Method for depositing a group IV semiconductor and related semiconductor device structures
US11018002B2 (en)2017-07-192021-05-25Asm Ip Holding B.V.Method for selectively depositing a Group IV semiconductor and related semiconductor device structures
US10590535B2 (en)*2017-07-262020-03-17Asm Ip Holdings B.V.Chemical treatment, deposition and/or infiltration apparatus and method for using the same
TWI815813B (en)2017-08-042023-09-21荷蘭商Asm智慧財產控股公司Showerhead assembly for distributing a gas within a reaction chamber
US10770336B2 (en)2017-08-082020-09-08Asm Ip Holding B.V.Substrate lift mechanism and reactor including same
US10692741B2 (en)2017-08-082020-06-23Asm Ip Holdings B.V.Radiation shield
US11769682B2 (en)2017-08-092023-09-26Asm Ip Holding B.V.Storage apparatus for storing cassettes for substrates and processing apparatus equipped therewith
US10249524B2 (en)2017-08-092019-04-02Asm Ip Holding B.V.Cassette holder assembly for a substrate cassette and holding member for use in such assembly
US11139191B2 (en)2017-08-092021-10-05Asm Ip Holding B.V.Storage apparatus for storing cassettes for substrates and processing apparatus equipped therewith
USD900036S1 (en)2017-08-242020-10-27Asm Ip Holding B.V.Heater electrical connector and adapter
US11830730B2 (en)2017-08-292023-11-28Asm Ip Holding B.V.Layer forming method and apparatus
US11056344B2 (en)2017-08-302021-07-06Asm Ip Holding B.V.Layer forming method
US11295980B2 (en)2017-08-302022-04-05Asm Ip Holding B.V.Methods for depositing a molybdenum metal film over a dielectric surface of a substrate by a cyclical deposition process and related semiconductor device structures
KR102491945B1 (en)2017-08-302023-01-26에이에스엠 아이피 홀딩 비.브이.Substrate processing apparatus
KR102401446B1 (en)2017-08-312022-05-24에이에스엠 아이피 홀딩 비.브이.Substrate processing apparatus
KR102630301B1 (en)2017-09-212024-01-29에이에스엠 아이피 홀딩 비.브이.Method of sequential infiltration synthesis treatment of infiltrateable material and structures and devices formed using same
US10844484B2 (en)2017-09-222020-11-24Asm Ip Holding B.V.Apparatus for dispensing a vapor phase reactant to a reaction chamber and related methods
US10658205B2 (en)2017-09-282020-05-19Asm Ip Holdings B.V.Chemical dispensing apparatus and methods for dispensing a chemical to a reaction chamber
US10403504B2 (en)2017-10-052019-09-03Asm Ip Holding B.V.Method for selectively depositing a metallic film on a substrate
US10319588B2 (en)2017-10-102019-06-11Asm Ip Holding B.V.Method for depositing a metal chalcogenide on a substrate by cyclical deposition
US10923344B2 (en)2017-10-302021-02-16Asm Ip Holding B.V.Methods for forming a semiconductor structure and related semiconductor structures
US10910262B2 (en)2017-11-162021-02-02Asm Ip Holding B.V.Method of selectively depositing a capping layer structure on a semiconductor device structure
KR102443047B1 (en)2017-11-162022-09-14에이에스엠 아이피 홀딩 비.브이.Method of processing a substrate and a device manufactured by the same
US11022879B2 (en)2017-11-242021-06-01Asm Ip Holding B.V.Method of forming an enhanced unexposed photoresist layer
WO2019103613A1 (en)2017-11-272019-05-31Asm Ip Holding B.V.A storage device for storing wafer cassettes for use with a batch furnace
CN111344522B (en)2017-11-272022-04-12阿斯莫Ip控股公司Including clean mini-environment device
US10872771B2 (en)2018-01-162020-12-22Asm Ip Holding B. V.Method for depositing a material film on a substrate within a reaction chamber by a cyclical deposition process and related device structures
TWI799494B (en)2018-01-192023-04-21荷蘭商Asm 智慧財產控股公司Deposition method
KR102695659B1 (en)2018-01-192024-08-14에이에스엠 아이피 홀딩 비.브이. Method for depositing a gap filling layer by plasma assisted deposition
USD903477S1 (en)2018-01-242020-12-01Asm Ip Holdings B.V.Metal clamp
US11018047B2 (en)2018-01-252021-05-25Asm Ip Holding B.V.Hybrid lift pin
KR102455643B1 (en)*2018-01-262022-10-19주식회사 케이씨텍Apparatus for Treating Substrate and the Method Thereof
USD880437S1 (en)2018-02-012020-04-07Asm Ip Holding B.V.Gas supply plate for semiconductor manufacturing apparatus
US11081345B2 (en)2018-02-062021-08-03Asm Ip Holding B.V.Method of post-deposition treatment for silicon oxide film
US10896820B2 (en)2018-02-142021-01-19Asm Ip Holding B.V.Method for depositing a ruthenium-containing film on a substrate by a cyclical deposition process
WO2019158960A1 (en)2018-02-142019-08-22Asm Ip Holding B.V.A method for depositing a ruthenium-containing film on a substrate by a cyclical deposition process
US10731249B2 (en)2018-02-152020-08-04Asm Ip Holding B.V.Method of forming a transition metal containing film on a substrate by a cyclical deposition process, a method for supplying a transition metal halide compound to a reaction chamber, and related vapor deposition apparatus
KR102636427B1 (en)2018-02-202024-02-13에이에스엠 아이피 홀딩 비.브이.Substrate processing method and apparatus
US10658181B2 (en)2018-02-202020-05-19Asm Ip Holding B.V.Method of spacer-defined direct patterning in semiconductor fabrication
US10975470B2 (en)2018-02-232021-04-13Asm Ip Holding B.V.Apparatus for detecting or monitoring for a chemical precursor in a high temperature environment
US11473195B2 (en)2018-03-012022-10-18Asm Ip Holding B.V.Semiconductor processing apparatus and a method for processing a substrate
US11629406B2 (en)2018-03-092023-04-18Asm Ip Holding B.V.Semiconductor processing apparatus comprising one or more pyrometers for measuring a temperature of a substrate during transfer of the substrate
US11114283B2 (en)2018-03-162021-09-07Asm Ip Holding B.V.Reactor, system including the reactor, and methods of manufacturing and using same
KR102646467B1 (en)2018-03-272024-03-11에이에스엠 아이피 홀딩 비.브이.Method of forming an electrode on a substrate and a semiconductor device structure including an electrode
US11230766B2 (en)2018-03-292022-01-25Asm Ip Holding B.V.Substrate processing apparatus and method
US11088002B2 (en)2018-03-292021-08-10Asm Ip Holding B.V.Substrate rack and a substrate processing system and method
KR102501472B1 (en)2018-03-302023-02-20에이에스엠 아이피 홀딩 비.브이.Substrate processing method
KR102600229B1 (en)2018-04-092023-11-10에이에스엠 아이피 홀딩 비.브이.Substrate supporting device, substrate processing apparatus including the same and substrate processing method
TWI811348B (en)2018-05-082023-08-11荷蘭商Asm 智慧財產控股公司Methods for depositing an oxide film on a substrate by a cyclical deposition process and related device structures
US12025484B2 (en)2018-05-082024-07-02Asm Ip Holding B.V.Thin film forming method
US12272527B2 (en)2018-05-092025-04-08Asm Ip Holding B.V.Apparatus for use with hydrogen radicals and method of using same
KR20190129718A (en)2018-05-112019-11-20에이에스엠 아이피 홀딩 비.브이.Methods for forming a doped metal carbide film on a substrate and related semiconductor device structures
KR102596988B1 (en)2018-05-282023-10-31에이에스엠 아이피 홀딩 비.브이.Method of processing a substrate and a device manufactured by the same
US11718913B2 (en)2018-06-042023-08-08Asm Ip Holding B.V.Gas distribution system and reactor system including same
TWI840362B (en)2018-06-042024-05-01荷蘭商Asm Ip私人控股有限公司Wafer handling chamber with moisture reduction
US11286562B2 (en)2018-06-082022-03-29Asm Ip Holding B.V.Gas-phase chemical reactor and method of using same
KR102568797B1 (en)2018-06-212023-08-21에이에스엠 아이피 홀딩 비.브이.Substrate processing system
US10797133B2 (en)2018-06-212020-10-06Asm Ip Holding B.V.Method for depositing a phosphorus doped silicon arsenide film and related semiconductor device structures
KR102854019B1 (en)2018-06-272025-09-02에이에스엠 아이피 홀딩 비.브이. Periodic deposition method for forming a metal-containing material and films and structures comprising the metal-containing material
TWI873894B (en)2018-06-272025-02-21荷蘭商Asm Ip私人控股有限公司Cyclic deposition methods for forming metal-containing material and films and structures including the metal-containing material
KR102686758B1 (en)2018-06-292024-07-18에이에스엠 아이피 홀딩 비.브이.Method for depositing a thin film and manufacturing a semiconductor device
US10612136B2 (en)2018-06-292020-04-07ASM IP Holding, B.V.Temperature-controlled flange and reactor system including same
US10755922B2 (en)2018-07-032020-08-25Asm Ip Holding B.V.Method for depositing silicon-free carbon-containing film as gap-fill layer by pulse plasma-assisted deposition
US10388513B1 (en)2018-07-032019-08-20Asm Ip Holding B.V.Method for depositing silicon-free carbon-containing film as gap-fill layer by pulse plasma-assisted deposition
US10767789B2 (en)2018-07-162020-09-08Asm Ip Holding B.V.Diaphragm valves, valve components, and methods for forming valve components
US11053591B2 (en)2018-08-062021-07-06Asm Ip Holding B.V.Multi-port gas injection system and reactor system including same
US10883175B2 (en)2018-08-092021-01-05Asm Ip Holding B.V.Vertical furnace for processing substrates and a liner for use therein
US10829852B2 (en)2018-08-162020-11-10Asm Ip Holding B.V.Gas distribution device for a wafer processing apparatus
US11430674B2 (en)2018-08-222022-08-30Asm Ip Holding B.V.Sensor array, apparatus for dispensing a vapor phase reactant to a reaction chamber and related methods
KR102707956B1 (en)2018-09-112024-09-19에이에스엠 아이피 홀딩 비.브이.Method for deposition of a thin film
US11024523B2 (en)2018-09-112021-06-01Asm Ip Holding B.V.Substrate processing apparatus and method
US11049751B2 (en)2018-09-142021-06-29Asm Ip Holding B.V.Cassette supply system to store and handle cassettes and processing apparatus equipped therewith
CN110970344B (en)2018-10-012024-10-25Asmip控股有限公司Substrate holding apparatus, system comprising the same and method of using the same
US11232963B2 (en)2018-10-032022-01-25Asm Ip Holding B.V.Substrate processing apparatus and method
KR102592699B1 (en)2018-10-082023-10-23에이에스엠 아이피 홀딩 비.브이.Substrate support unit and apparatuses for depositing thin film and processing the substrate including the same
US10847365B2 (en)2018-10-112020-11-24Asm Ip Holding B.V.Method of forming conformal silicon carbide film by cyclic CVD
US10811256B2 (en)2018-10-162020-10-20Asm Ip Holding B.V.Method for etching a carbon-containing feature
KR102605121B1 (en)2018-10-192023-11-23에이에스엠 아이피 홀딩 비.브이.Substrate processing apparatus and substrate processing method
KR102546322B1 (en)2018-10-192023-06-21에이에스엠 아이피 홀딩 비.브이.Substrate processing apparatus and substrate processing method
USD948463S1 (en)2018-10-242022-04-12Asm Ip Holding B.V.Susceptor for semiconductor substrate supporting apparatus
US12378665B2 (en)2018-10-262025-08-05Asm Ip Holding B.V.High temperature coatings for a preclean and etch apparatus and related methods
US11087997B2 (en)2018-10-312021-08-10Asm Ip Holding B.V.Substrate processing apparatus for processing substrates
KR102748291B1 (en)2018-11-022024-12-31에이에스엠 아이피 홀딩 비.브이.Substrate support unit and substrate processing apparatus including the same
US11572620B2 (en)2018-11-062023-02-07Asm Ip Holding B.V.Methods for selectively depositing an amorphous silicon film on a substrate
US11031242B2 (en)2018-11-072021-06-08Asm Ip Holding B.V.Methods for depositing a boron doped silicon germanium film
US10847366B2 (en)2018-11-162020-11-24Asm Ip Holding B.V.Methods for depositing a transition metal chalcogenide film on a substrate by a cyclical deposition process
US10818758B2 (en)2018-11-162020-10-27Asm Ip Holding B.V.Methods for forming a metal silicate film on a substrate in a reaction chamber and related semiconductor device structures
US10559458B1 (en)2018-11-262020-02-11Asm Ip Holding B.V.Method of forming oxynitride film
US12040199B2 (en)2018-11-282024-07-16Asm Ip Holding B.V.Substrate processing apparatus for processing substrates
US11217444B2 (en)2018-11-302022-01-04Asm Ip Holding B.V.Method for forming an ultraviolet radiation responsive metal oxide-containing film
KR102636428B1 (en)2018-12-042024-02-13에이에스엠 아이피 홀딩 비.브이.A method for cleaning a substrate processing apparatus
US11158513B2 (en)2018-12-132021-10-26Asm Ip Holding B.V.Methods for forming a rhenium-containing film on a substrate by a cyclical deposition process and related semiconductor device structures
TWI874340B (en)2018-12-142025-03-01荷蘭商Asm Ip私人控股有限公司Method of forming device structure, structure formed by the method and system for performing the method
TWI866480B (en)2019-01-172024-12-11荷蘭商Asm Ip 私人控股有限公司Methods of forming a transition metal containing film on a substrate by a cyclical deposition process
KR102727227B1 (en)2019-01-222024-11-07에이에스엠 아이피 홀딩 비.브이.Semiconductor processing device
CN111524788B (en)2019-02-012023-11-24Asm Ip私人控股有限公司 Method for forming topologically selective films of silicon oxide
TWI838458B (en)2019-02-202024-04-11荷蘭商Asm Ip私人控股有限公司Apparatus and methods for plug fill deposition in 3-d nand applications
TWI845607B (en)2019-02-202024-06-21荷蘭商Asm Ip私人控股有限公司Cyclical deposition method and apparatus for filling a recess formed within a substrate surface
TWI873122B (en)2019-02-202025-02-21荷蘭商Asm Ip私人控股有限公司Method of filling a recess formed within a surface of a substrate, semiconductor structure formed according to the method, and semiconductor processing apparatus
KR102626263B1 (en)2019-02-202024-01-16에이에스엠 아이피 홀딩 비.브이.Cyclical deposition method including treatment step and apparatus for same
TWI842826B (en)2019-02-222024-05-21荷蘭商Asm Ip私人控股有限公司Substrate processing apparatus and method for processing substrate
KR102782593B1 (en)2019-03-082025-03-14에이에스엠 아이피 홀딩 비.브이.Structure Including SiOC Layer and Method of Forming Same
US11742198B2 (en)2019-03-082023-08-29Asm Ip Holding B.V.Structure including SiOCN layer and method of forming same
KR102858005B1 (en)2019-03-082025-09-09에이에스엠 아이피 홀딩 비.브이.Method for Selective Deposition of Silicon Nitride Layer and Structure Including Selectively-Deposited Silicon Nitride Layer
JP2020167398A (en)2019-03-282020-10-08エーエスエム・アイピー・ホールディング・ベー・フェー Door openers and substrate processing equipment provided with door openers
KR102809999B1 (en)2019-04-012025-05-19에이에스엠 아이피 홀딩 비.브이.Method of manufacturing semiconductor device
KR20200123380A (en)2019-04-192020-10-29에이에스엠 아이피 홀딩 비.브이.Layer forming method and apparatus
KR20200125453A (en)2019-04-242020-11-04에이에스엠 아이피 홀딩 비.브이.Gas-phase reactor system and method of using same
US11289326B2 (en)2019-05-072022-03-29Asm Ip Holding B.V.Method for reforming amorphous carbon polymer film
KR20200130121A (en)2019-05-072020-11-18에이에스엠 아이피 홀딩 비.브이.Chemical source vessel with dip tube
KR20200130652A (en)2019-05-102020-11-19에이에스엠 아이피 홀딩 비.브이.Method of depositing material onto a surface and structure formed according to the method
JP7612342B2 (en)2019-05-162025-01-14エーエスエム・アイピー・ホールディング・ベー・フェー Wafer boat handling apparatus, vertical batch furnace and method
JP7598201B2 (en)2019-05-162024-12-11エーエスエム・アイピー・ホールディング・ベー・フェー Wafer boat handling apparatus, vertical batch furnace and method
USD975665S1 (en)2019-05-172023-01-17Asm Ip Holding B.V.Susceptor shaft
USD947913S1 (en)2019-05-172022-04-05Asm Ip Holding B.V.Susceptor shaft
USD935572S1 (en)2019-05-242021-11-09Asm Ip Holding B.V.Gas channel plate
USD922229S1 (en)2019-06-052021-06-15Asm Ip Holding B.V.Device for controlling a temperature of a gas supply unit
KR20200141002A (en)2019-06-062020-12-17에이에스엠 아이피 홀딩 비.브이.Method of using a gas-phase reactor system including analyzing exhausted gas
KR20200141931A (en)2019-06-102020-12-21에이에스엠 아이피 홀딩 비.브이.Method for cleaning quartz epitaxial chambers
KR20200143254A (en)2019-06-112020-12-23에이에스엠 아이피 홀딩 비.브이.Method of forming an electronic structure using an reforming gas, system for performing the method, and structure formed using the method
USD944946S1 (en)2019-06-142022-03-01Asm Ip Holding B.V.Shower plate
USD931978S1 (en)2019-06-272021-09-28Asm Ip Holding B.V.Showerhead vacuum transport
KR20210005515A (en)2019-07-032021-01-14에이에스엠 아이피 홀딩 비.브이.Temperature control assembly for substrate processing apparatus and method of using same
JP7499079B2 (en)2019-07-092024-06-13エーエスエム・アイピー・ホールディング・ベー・フェー Plasma device using coaxial waveguide and substrate processing method
CN112216646A (en)2019-07-102021-01-12Asm Ip私人控股有限公司Substrate supporting assembly and substrate processing device comprising same
KR20210010307A (en)2019-07-162021-01-27에이에스엠 아이피 홀딩 비.브이.Substrate processing apparatus
KR102860110B1 (en)2019-07-172025-09-16에이에스엠 아이피 홀딩 비.브이.Methods of forming silicon germanium structures
KR20210010816A (en)2019-07-172021-01-28에이에스엠 아이피 홀딩 비.브이.Radical assist ignition plasma system and method
US11643724B2 (en)2019-07-182023-05-09Asm Ip Holding B.V.Method of forming structures using a neutral beam
KR20210010817A (en)2019-07-192021-01-28에이에스엠 아이피 홀딩 비.브이.Method of Forming Topology-Controlled Amorphous Carbon Polymer Film
TWI839544B (en)2019-07-192024-04-21荷蘭商Asm Ip私人控股有限公司Method of forming topology-controlled amorphous carbon polymer film
TWI851767B (en)2019-07-292024-08-11荷蘭商Asm Ip私人控股有限公司Methods for selective deposition utilizing n-type dopants and/or alternative dopants to achieve high dopant incorporation
CN112309900A (en)2019-07-302021-02-02Asm Ip私人控股有限公司Substrate processing apparatus
CN112309899A (en)2019-07-302021-02-02Asm Ip私人控股有限公司Substrate processing apparatus
US12169361B2 (en)2019-07-302024-12-17Asm Ip Holding B.V.Substrate processing apparatus and method
US11587815B2 (en)2019-07-312023-02-21Asm Ip Holding B.V.Vertical batch furnace assembly
US11587814B2 (en)2019-07-312023-02-21Asm Ip Holding B.V.Vertical batch furnace assembly
US11227782B2 (en)2019-07-312022-01-18Asm Ip Holding B.V.Vertical batch furnace assembly
CN112323048B (en)2019-08-052024-02-09Asm Ip私人控股有限公司Liquid level sensor for chemical source container
CN112342526A (en)2019-08-092021-02-09Asm Ip私人控股有限公司Heater assembly including cooling device and method of using same
USD965044S1 (en)2019-08-192022-09-27Asm Ip Holding B.V.Susceptor shaft
USD965524S1 (en)2019-08-192022-10-04Asm Ip Holding B.V.Susceptor support
JP2021031769A (en)2019-08-212021-03-01エーエスエム アイピー ホールディング ビー.ブイ.Production apparatus of mixed gas of film deposition raw material and film deposition apparatus
USD940837S1 (en)2019-08-222022-01-11Asm Ip Holding B.V.Electrode
USD949319S1 (en)2019-08-222022-04-19Asm Ip Holding B.V.Exhaust duct
USD930782S1 (en)2019-08-222021-09-14Asm Ip Holding B.V.Gas distributor
USD979506S1 (en)2019-08-222023-02-28Asm Ip Holding B.V.Insulator
KR20210024423A (en)2019-08-222021-03-05에이에스엠 아이피 홀딩 비.브이.Method for forming a structure with a hole
KR20210024420A (en)2019-08-232021-03-05에이에스엠 아이피 홀딩 비.브이.Method for depositing silicon oxide film having improved quality by peald using bis(diethylamino)silane
US11286558B2 (en)2019-08-232022-03-29Asm Ip Holding B.V.Methods for depositing a molybdenum nitride film on a surface of a substrate by a cyclical deposition process and related semiconductor device structures including a molybdenum nitride film
KR102806450B1 (en)2019-09-042025-05-12에이에스엠 아이피 홀딩 비.브이.Methods for selective deposition using a sacrificial capping layer
KR102733104B1 (en)2019-09-052024-11-22에이에스엠 아이피 홀딩 비.브이.Substrate processing apparatus
US11562901B2 (en)2019-09-252023-01-24Asm Ip Holding B.V.Substrate processing method
CN112593212B (en)2019-10-022023-12-22Asm Ip私人控股有限公司Method for forming topologically selective silicon oxide film by cyclic plasma enhanced deposition process
KR20210042810A (en)2019-10-082021-04-20에이에스엠 아이피 홀딩 비.브이.Reactor system including a gas distribution assembly for use with activated species and method of using same
TWI846953B (en)2019-10-082024-07-01荷蘭商Asm Ip私人控股有限公司Substrate processing device
TW202128273A (en)2019-10-082021-08-01荷蘭商Asm Ip私人控股有限公司Gas injection system, reactor system, and method of depositing material on surface of substratewithin reaction chamber
TWI846966B (en)2019-10-102024-07-01荷蘭商Asm Ip私人控股有限公司Method of forming a photoresist underlayer and structure including same
US12009241B2 (en)2019-10-142024-06-11Asm Ip Holding B.V.Vertical batch furnace assembly with detector to detect cassette
TWI834919B (en)2019-10-162024-03-11荷蘭商Asm Ip私人控股有限公司Method of topology-selective film formation of silicon oxide
US11637014B2 (en)2019-10-172023-04-25Asm Ip Holding B.V.Methods for selective deposition of doped semiconductor material
KR102845724B1 (en)2019-10-212025-08-13에이에스엠 아이피 홀딩 비.브이.Apparatus and methods for selectively etching films
KR20210050453A (en)2019-10-252021-05-07에이에스엠 아이피 홀딩 비.브이.Methods for filling a gap feature on a substrate surface and related semiconductor structures
US11646205B2 (en)2019-10-292023-05-09Asm Ip Holding B.V.Methods of selectively forming n-type doped material on a surface, systems for selectively forming n-type doped material, and structures formed using same
KR20210054983A (en)2019-11-052021-05-14에이에스엠 아이피 홀딩 비.브이.Structures with doped semiconductor layers and methods and systems for forming same
US11501968B2 (en)2019-11-152022-11-15Asm Ip Holding B.V.Method for providing a semiconductor device with silicon filled gaps
KR102861314B1 (en)2019-11-202025-09-17에이에스엠 아이피 홀딩 비.브이.Method of depositing carbon-containing material on a surface of a substrate, structure formed using the method, and system for forming the structure
CN112951697B (en)2019-11-262025-07-29Asmip私人控股有限公司Substrate processing apparatus
US11450529B2 (en)2019-11-262022-09-20Asm Ip Holding B.V.Methods for selectively forming a target film on a substrate comprising a first dielectric surface and a second metallic surface
CN112885692B (en)2019-11-292025-08-15Asmip私人控股有限公司Substrate processing apparatus
CN120432376A (en)2019-11-292025-08-05Asm Ip私人控股有限公司Substrate processing apparatus
JP7527928B2 (en)2019-12-022024-08-05エーエスエム・アイピー・ホールディング・ベー・フェー Substrate processing apparatus and substrate processing method
KR20210070898A (en)2019-12-042021-06-15에이에스엠 아이피 홀딩 비.브이.Substrate processing apparatus
KR20210078405A (en)2019-12-172021-06-28에이에스엠 아이피 홀딩 비.브이.Method of forming vanadium nitride layer and structure including the vanadium nitride layer
KR20210080214A (en)2019-12-192021-06-30에이에스엠 아이피 홀딩 비.브이.Methods for filling a gap feature on a substrate and related semiconductor structures
JP7636892B2 (en)2020-01-062025-02-27エーエスエム・アイピー・ホールディング・ベー・フェー Channeled Lift Pins
JP7730637B2 (en)2020-01-062025-08-28エーエスエム・アイピー・ホールディング・ベー・フェー Gas delivery assembly, components thereof, and reactor system including same
US11993847B2 (en)2020-01-082024-05-28Asm Ip Holding B.V.Injector
KR20210093163A (en)2020-01-162021-07-27에이에스엠 아이피 홀딩 비.브이.Method of forming high aspect ratio features
KR102675856B1 (en)2020-01-202024-06-17에이에스엠 아이피 홀딩 비.브이.Method of forming thin film and method of modifying surface of thin film
TWI889744B (en)2020-01-292025-07-11荷蘭商Asm Ip私人控股有限公司Contaminant trap system, and baffle plate stack
TW202513845A (en)2020-02-032025-04-01荷蘭商Asm Ip私人控股有限公司Semiconductor structures and methods for forming the same
KR20210100010A (en)2020-02-042021-08-13에이에스엠 아이피 홀딩 비.브이.Method and apparatus for transmittance measurements of large articles
US11776846B2 (en)2020-02-072023-10-03Asm Ip Holding B.V.Methods for depositing gap filling fluids and related systems and devices
TW202146691A (en)2020-02-132021-12-16荷蘭商Asm Ip私人控股有限公司Gas distribution assembly, shower plate assembly, and method of adjusting conductance of gas to reaction chamber
KR20210103956A (en)2020-02-132021-08-24에이에스엠 아이피 홀딩 비.브이.Substrate processing apparatus including light receiving device and calibration method of light receiving device
TWI855223B (en)2020-02-172024-09-11荷蘭商Asm Ip私人控股有限公司Method for growing phosphorous-doped silicon layer
CN113410160A (en)2020-02-282021-09-17Asm Ip私人控股有限公司System specially used for cleaning parts
KR20210113043A (en)2020-03-042021-09-15에이에스엠 아이피 홀딩 비.브이.Alignment fixture for a reactor system
KR20210116240A (en)2020-03-112021-09-27에이에스엠 아이피 홀딩 비.브이.Substrate handling device with adjustable joints
US11876356B2 (en)2020-03-112024-01-16Asm Ip Holding B.V.Lockout tagout assembly and system and method of using same
KR102775390B1 (en)2020-03-122025-02-28에이에스엠 아이피 홀딩 비.브이.Method for Fabricating Layer Structure Having Target Topological Profile
US12173404B2 (en)2020-03-172024-12-24Asm Ip Holding B.V.Method of depositing epitaxial material, structure formed using the method, and system for performing the method
KR102755229B1 (en)2020-04-022025-01-14에이에스엠 아이피 홀딩 비.브이.Thin film forming method
TWI887376B (en)2020-04-032025-06-21荷蘭商Asm Ip私人控股有限公司Method for manufacturing semiconductor device
TWI888525B (en)2020-04-082025-07-01荷蘭商Asm Ip私人控股有限公司Apparatus and methods for selectively etching silcon oxide films
KR20210128343A (en)2020-04-152021-10-26에이에스엠 아이피 홀딩 비.브이.Method of forming chromium nitride layer and structure including the chromium nitride layer
US11821078B2 (en)2020-04-152023-11-21Asm Ip Holding B.V.Method for forming precoat film and method for forming silicon-containing film
US11996289B2 (en)2020-04-162024-05-28Asm Ip Holding B.V.Methods of forming structures including silicon germanium and silicon layers, devices formed using the methods, and systems for performing the methods
KR20210130646A (en)2020-04-212021-11-01에이에스엠 아이피 홀딩 비.브이.Method for processing a substrate
TW202208671A (en)2020-04-242022-03-01荷蘭商Asm Ip私人控股有限公司Methods of forming structures including vanadium boride and vanadium phosphide layers
CN113555279A (en)2020-04-242021-10-26Asm Ip私人控股有限公司 Methods of forming vanadium nitride-containing layers and structures comprising the same
KR20210132612A (en)2020-04-242021-11-04에이에스엠 아이피 홀딩 비.브이.Methods and apparatus for stabilizing vanadium compounds
KR102866804B1 (en)2020-04-242025-09-30에이에스엠 아이피 홀딩 비.브이.Vertical batch furnace assembly comprising a cooling gas supply
KR20210132600A (en)2020-04-242021-11-04에이에스엠 아이피 홀딩 비.브이.Methods and systems for depositing a layer comprising vanadium, nitrogen, and a further element
KR102783898B1 (en)2020-04-292025-03-18에이에스엠 아이피 홀딩 비.브이.Solid source precursor vessel
KR20210134869A (en)2020-05-012021-11-11에이에스엠 아이피 홀딩 비.브이.Fast FOUP swapping with a FOUP handler
KR102788543B1 (en)2020-05-132025-03-27에이에스엠 아이피 홀딩 비.브이.Laser alignment fixture for a reactor system
TW202146699A (en)2020-05-152021-12-16荷蘭商Asm Ip私人控股有限公司Method of forming a silicon germanium layer, semiconductor structure, semiconductor device, method of forming a deposition layer, and deposition system
KR20210143653A (en)2020-05-192021-11-29에이에스엠 아이피 홀딩 비.브이.Substrate processing apparatus
KR102795476B1 (en)2020-05-212025-04-11에이에스엠 아이피 홀딩 비.브이.Structures including multiple carbon layers and methods of forming and using same
KR20210145079A (en)2020-05-212021-12-01에이에스엠 아이피 홀딩 비.브이.Flange and apparatus for processing substrates
TWI873343B (en)2020-05-222025-02-21荷蘭商Asm Ip私人控股有限公司Reaction system for forming thin film on substrate
KR20210146802A (en)2020-05-262021-12-06에이에스엠 아이피 홀딩 비.브이.Method for depositing boron and gallium containing silicon germanium layers
TWI876048B (en)2020-05-292025-03-11荷蘭商Asm Ip私人控股有限公司Substrate processing device
TW202212620A (en)2020-06-022022-04-01荷蘭商Asm Ip私人控股有限公司Apparatus for processing substrate, method of forming film, and method of controlling apparatus for processing substrate
TW202208659A (en)2020-06-162022-03-01荷蘭商Asm Ip私人控股有限公司Method for depositing boron containing silicon germanium layers
TW202218133A (en)2020-06-242022-05-01荷蘭商Asm Ip私人控股有限公司Method for forming a layer provided with silicon
TWI873359B (en)2020-06-302025-02-21荷蘭商Asm Ip私人控股有限公司Substrate processing method
US12431354B2 (en)2020-07-012025-09-30Asm Ip Holding B.V.Silicon nitride and silicon oxide deposition methods using fluorine inhibitor
TW202202649A (en)2020-07-082022-01-16荷蘭商Asm Ip私人控股有限公司Substrate processing method
KR20220010438A (en)2020-07-172022-01-25에이에스엠 아이피 홀딩 비.브이.Structures and methods for use in photolithography
KR20220011092A (en)2020-07-202022-01-27에이에스엠 아이피 홀딩 비.브이.Method and system for forming structures including transition metal layers
TWI878570B (en)2020-07-202025-04-01荷蘭商Asm Ip私人控股有限公司Method and system for depositing molybdenum layers
US12322591B2 (en)2020-07-272025-06-03Asm Ip Holding B.V.Thin film deposition process
KR20220021863A (en)2020-08-142022-02-22에이에스엠 아이피 홀딩 비.브이.Method for processing a substrate
US12040177B2 (en)2020-08-182024-07-16Asm Ip Holding B.V.Methods for forming a laminate film by cyclical plasma-enhanced deposition processes
TW202228863A (en)2020-08-252022-08-01荷蘭商Asm Ip私人控股有限公司Method for cleaning a substrate, method for selectively depositing, and reaction system
US11725280B2 (en)2020-08-262023-08-15Asm Ip Holding B.V.Method for forming metal silicon oxide and metal silicon oxynitride layers
TW202229601A (en)2020-08-272022-08-01荷蘭商Asm Ip私人控股有限公司Method of forming patterned structures, method of manipulating mechanical property, device structure, and substrate processing system
TW202217045A (en)2020-09-102022-05-01荷蘭商Asm Ip私人控股有限公司Methods for depositing gap filing fluids and related systems and devices
USD990534S1 (en)2020-09-112023-06-27Asm Ip Holding B.V.Weighted lift pin
KR20220036866A (en)2020-09-162022-03-23에이에스엠 아이피 홀딩 비.브이.Silicon oxide deposition method
USD1012873S1 (en)2020-09-242024-01-30Asm Ip Holding B.V.Electrode for semiconductor processing apparatus
TWI889903B (en)2020-09-252025-07-11荷蘭商Asm Ip私人控股有限公司Semiconductor processing method
US12009224B2 (en)2020-09-292024-06-11Asm Ip Holding B.V.Apparatus and method for etching metal nitrides
KR20220045900A (en)2020-10-062022-04-13에이에스엠 아이피 홀딩 비.브이.Deposition method and an apparatus for depositing a silicon-containing material
CN114293174A (en)2020-10-072022-04-08Asm Ip私人控股有限公司Gas supply unit and substrate processing apparatus including the same
TW202229613A (en)2020-10-142022-08-01荷蘭商Asm Ip私人控股有限公司Method of depositing material on stepped structure
TW202232565A (en)2020-10-152022-08-16荷蘭商Asm Ip私人控股有限公司Method of manufacturing semiconductor device, and substrate treatment apparatus using ether-cat
TW202217037A (en)2020-10-222022-05-01荷蘭商Asm Ip私人控股有限公司Method of depositing vanadium metal, structure, device and a deposition assembly
TW202223136A (en)2020-10-282022-06-16荷蘭商Asm Ip私人控股有限公司Method for forming layer on substrate, and semiconductor processing system
TW202229620A (en)2020-11-122022-08-01特文特大學Deposition system, method for controlling reaction condition, method for depositing
TW202229795A (en)2020-11-232022-08-01荷蘭商Asm Ip私人控股有限公司A substrate processing apparatus with an injector
TW202235649A (en)2020-11-242022-09-16荷蘭商Asm Ip私人控股有限公司Methods for filling a gap and related systems and devices
TW202235675A (en)2020-11-302022-09-16荷蘭商Asm Ip私人控股有限公司Injector, and substrate processing apparatus
US12255053B2 (en)2020-12-102025-03-18Asm Ip Holding B.V.Methods and systems for depositing a layer
TW202233884A (en)2020-12-142022-09-01荷蘭商Asm Ip私人控股有限公司Method of forming structures for threshold voltage control
US11946137B2 (en)2020-12-162024-04-02Asm Ip Holding B.V.Runout and wobble measurement fixtures
TW202232639A (en)2020-12-182022-08-16荷蘭商Asm Ip私人控股有限公司Wafer processing apparatus with a rotatable table
TW202231903A (en)2020-12-222022-08-16荷蘭商Asm Ip私人控股有限公司Transition metal deposition method, transition metal layer, and deposition assembly for depositing transition metal on substrate
TW202226899A (en)2020-12-222022-07-01荷蘭商Asm Ip私人控股有限公司Plasma treatment device having matching box
TW202242184A (en)2020-12-222022-11-01荷蘭商Asm Ip私人控股有限公司Precursor capsule, precursor vessel, vapor deposition assembly, and method of loading solid precursor into precursor vessel
USD980813S1 (en)2021-05-112023-03-14Asm Ip Holding B.V.Gas flow control plate for substrate processing apparatus
USD980814S1 (en)2021-05-112023-03-14Asm Ip Holding B.V.Gas distributor for substrate processing apparatus
USD981973S1 (en)2021-05-112023-03-28Asm Ip Holding B.V.Reactor wall for substrate processing apparatus
USD990441S1 (en)2021-09-072023-06-27Asm Ip Holding B.V.Gas flow control plate
USD1060598S1 (en)2021-12-032025-02-04Asm Ip Holding B.V.Split showerhead cover

Citations (1)

* Cited by examiner, † Cited by third party
Publication numberPriority datePublication dateAssigneeTitle
KR20040063635A (en)*2003-01-082004-07-14주식회사 에이디피엔지니어링Substrate pressing apparatus for use in LCD cell fabricating process

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication numberPriority datePublication dateAssigneeTitle
KR20040063635A (en)*2003-01-082004-07-14주식회사 에이디피엔지니어링Substrate pressing apparatus for use in LCD cell fabricating process

Cited By (1)

* Cited by examiner, † Cited by third party
Publication numberPriority datePublication dateAssigneeTitle
US11728200B2 (en)2019-05-232023-08-15Samsung Electronics Co., Ltd.Wafer bonding apparatuses

Also Published As

Publication numberPublication date
KR20100079920A (en)2010-07-08

Similar Documents

PublicationPublication DateTitle
KR101111063B1 (en)Apparatus for joining of substrate
KR101281123B1 (en)apparatus for attaching substrates of flat plate display element
KR101378072B1 (en)An apparatus for attaching substrates
US7864289B2 (en)Apparatus and method for attaching substrates
JP4024698B2 (en) Bonding device for liquid crystal display elements
KR100994497B1 (en) Substrate Bonding Device and Substrate Bonding Method Using The Same
KR100961871B1 (en) Board Bonding Device
KR100994494B1 (en) Board Bonding Device
KR100931609B1 (en) Board Bonding Device
KR100960816B1 (en) Board Bonding Device
KR101360117B1 (en)apparatus for attaching substrates and method for attaching substrates by using same
KR100890380B1 (en) Board Bonding Device
KR101367663B1 (en)apparatus for attaching substrates of flat plate display element
JP2009282411A (en)Method and device for manufacturing liquid crystal display panel
KR100915699B1 (en)Apparatus for assembling substrates
KR101990854B1 (en)Apparatus for Attaching Substrate and Method for Manufacturing Attached Substrate using the same
KR100643504B1 (en) Bonding device and substrate bonding method of liquid crystal panel substrate
KR100931602B1 (en) Board Bonding Device
KR101926761B1 (en)Pairing apparatus for substrates and method thereof
KR101358952B1 (en)apparatus for attaching substrates
KR101471387B1 (en) Vibration correcting unit and substrate bonding machine having the same
KR101540054B1 (en)Method and apparatus for bonding substrates
KR101052887B1 (en) Sealing material and substrate bonding device using the same
KR100915698B1 (en)Apparatus for attaching substrates of flat plate display element
KR20090039460A (en) Board Bonding Device

Legal Events

DateCodeTitleDescription
A201Request for examination
PA0109Patent application

St.27 status event code:A-0-1-A10-A12-nap-PA0109

PA0201Request for examination

St.27 status event code:A-1-2-D10-D11-exm-PA0201

PN2301Change of applicant

St.27 status event code:A-3-3-R10-R13-asn-PN2301

St.27 status event code:A-3-3-R10-R11-asn-PN2301

PG1501Laying open of application

St.27 status event code:A-1-1-Q10-Q12-nap-PG1501

E902Notification of reason for refusal
PE0902Notice of grounds for rejection

St.27 status event code:A-1-2-D10-D21-exm-PE0902

P11-X000Amendment of application requested

St.27 status event code:A-2-2-P10-P11-nap-X000

P13-X000Application amended

St.27 status event code:A-2-2-P10-P13-nap-X000

E90FNotification of reason for final refusal
PE0902Notice of grounds for rejection

St.27 status event code:A-1-2-D10-D21-exm-PE0902

P11-X000Amendment of application requested

St.27 status event code:A-2-2-P10-P11-nap-X000

P13-X000Application amended

St.27 status event code:A-2-2-P10-P13-nap-X000

E701Decision to grant or registration of patent right
PE0701Decision of registration

St.27 status event code:A-1-2-D10-D22-exm-PE0701

GRNTWritten decision to grant
PR0701Registration of establishment

St.27 status event code:A-2-4-F10-F11-exm-PR0701

PR1002Payment of registration fee

St.27 status event code:A-2-2-U10-U11-oth-PR1002

Fee payment year number:1

PG1601Publication of registration

St.27 status event code:A-4-4-Q10-Q13-nap-PG1601

PN2301Change of applicant

St.27 status event code:A-5-5-R10-R13-asn-PN2301

St.27 status event code:A-5-5-R10-R11-asn-PN2301

PN2301Change of applicant

St.27 status event code:A-5-5-R10-R13-asn-PN2301

St.27 status event code:A-5-5-R10-R11-asn-PN2301

FPAYAnnual fee payment

Payment date:20150127

Year of fee payment:4

PR1001Payment of annual fee

St.27 status event code:A-4-4-U10-U11-oth-PR1001

Fee payment year number:4

PN2301Change of applicant

St.27 status event code:A-5-5-R10-R13-asn-PN2301

St.27 status event code:A-5-5-R10-R11-asn-PN2301

LAPSLapse due to unpaid annual fee
PC1903Unpaid annual fee

St.27 status event code:A-4-4-U10-U13-oth-PC1903

Not in force date:20160126

Payment event data comment text:Termination Category : DEFAULT_OF_REGISTRATION_FEE

PN2301Change of applicant

St.27 status event code:A-5-5-R10-R13-asn-PN2301

St.27 status event code:A-5-5-R10-R11-asn-PN2301

PC1903Unpaid annual fee

St.27 status event code:N-4-6-H10-H13-oth-PC1903

Ip right cessation event data comment text:Termination Category : DEFAULT_OF_REGISTRATION_FEE

Not in force date:20160126

P22-X000Classification modified

St.27 status event code:A-4-4-P10-P22-nap-X000

R18-X000Changes to party contact information recorded

St.27 status event code:A-5-5-R10-R18-oth-X000


[8]ページ先頭

©2009-2025 Movatter.jp