| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR10-2002-0022618AKR100468729B1 (ko) | 2002-04-25 | 2002-04-25 | Hcd 소스를 이용하여 실리콘 산화막을 원자층 증착하는방법 |
| US10/422,252US7077904B2 (en) | 2002-04-25 | 2003-04-23 | Method for atomic layer deposition (ALD) of silicon oxide film |
| US11/305,686US20060090694A1 (en) | 2002-04-25 | 2005-12-16 | Method for atomic layer deposition (ALD) of silicon oxide film |
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR10-2002-0022618AKR100468729B1 (ko) | 2002-04-25 | 2002-04-25 | Hcd 소스를 이용하여 실리콘 산화막을 원자층 증착하는방법 |
| Publication Number | Publication Date |
|---|---|
| KR20030084110A KR20030084110A (ko) | 2003-11-01 |
| KR100468729B1true KR100468729B1 (ko) | 2005-01-29 |
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR10-2002-0022618AExpired - Fee RelatedKR100468729B1 (ko) | 2002-04-25 | 2002-04-25 | Hcd 소스를 이용하여 실리콘 산화막을 원자층 증착하는방법 |
| Country | Link |
|---|---|
| US (2) | US7077904B2 (ko) |
| KR (1) | KR100468729B1 (ko) |
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20200060679A (ko)* | 2018-11-21 | 2020-06-01 | 타이완 세미콘덕터 매뉴팩쳐링 컴퍼니 리미티드 | 탄소 및 질소 도핑된 막으로의 갭 충전 |
| KR20200060678A (ko)* | 2018-11-21 | 2020-06-01 | 타이완 세미콘덕터 매뉴팩쳐링 컴퍼니 리미티드 | 내산화성을 위한 실리콘 산화물 층 및 그 형성 방법 |
| US11211243B2 (en) | 2018-11-21 | 2021-12-28 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method of filling gaps with carbon and nitrogen doped film |
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100732759B1 (ko)* | 2005-06-22 | 2007-06-27 | 주식회사 하이닉스반도체 | 반도체 소자의 비트라인 및 그 형성 방법 |
| TWI262550B (en)* | 2005-10-14 | 2006-09-21 | Ind Tech Res Inst | Element with a low temperature poly-Si film, method of direct poly-Si deposition at low temperature and inductively-coupled plasma chemical vapor deposition |
| US8232176B2 (en) | 2006-06-22 | 2012-07-31 | Applied Materials, Inc. | Dielectric deposition and etch back processes for bottom up gapfill |
| US7776395B2 (en)* | 2006-11-14 | 2010-08-17 | Applied Materials, Inc. | Method of depositing catalyst assisted silicates of high-k materials |
| US7749574B2 (en)* | 2006-11-14 | 2010-07-06 | Applied Materials, Inc. | Low temperature ALD SiO2 |
| JP5048352B2 (ja)* | 2007-01-31 | 2012-10-17 | 東京エレクトロン株式会社 | 基板処理方法及び基板処理装置 |
| US7964441B2 (en)* | 2007-03-30 | 2011-06-21 | Tokyo Electron Limited | Catalyst-assisted atomic layer deposition of silicon-containing films with integrated in-situ reactive treatment |
| US7928019B2 (en)* | 2007-08-10 | 2011-04-19 | Micron Technology, Inc. | Semiconductor processing |
| US7867923B2 (en)* | 2007-10-22 | 2011-01-11 | Applied Materials, Inc. | High quality silicon oxide films by remote plasma CVD from disilane precursors |
| KR20090080751A (ko)* | 2008-01-22 | 2009-07-27 | 삼성전자주식회사 | 저항성 메모리 소자 및 그 제조방법 |
| US7858535B2 (en)* | 2008-05-02 | 2010-12-28 | Micron Technology, Inc. | Methods of reducing defect formation on silicon dioxide formed by atomic layer deposition (ALD) processes and methods of fabricating semiconductor structures |
| US8357435B2 (en) | 2008-05-09 | 2013-01-22 | Applied Materials, Inc. | Flowable dielectric equipment and processes |
| JP5178342B2 (ja)* | 2008-06-23 | 2013-04-10 | キヤノン株式会社 | 堆積物除去方法及び堆積膜形成方法 |
| EP2139054A3 (en)* | 2008-06-25 | 2011-08-31 | Samsung Electronics Co., Ltd. | Memory device and method of manufacturing the same |
| US20100029072A1 (en)* | 2008-07-31 | 2010-02-04 | Park Jae-Eon | Methods of Forming Electrical Interconnects Using Thin Electrically Insulating Liners in Contact Holes |
| US20100112191A1 (en)* | 2008-10-30 | 2010-05-06 | Micron Technology, Inc. | Systems and associated methods for depositing materials |
| US8980382B2 (en) | 2009-12-02 | 2015-03-17 | Applied Materials, Inc. | Oxygen-doping for non-carbon radical-component CVD films |
| US8741788B2 (en) | 2009-08-06 | 2014-06-03 | Applied Materials, Inc. | Formation of silicon oxide using non-carbon flowable CVD processes |
| US20110045055A1 (en)* | 2009-08-21 | 2011-02-24 | Boston Scientific Scimed, Inc. | Medical devices containing therapeutic agents |
| US8449942B2 (en) | 2009-11-12 | 2013-05-28 | Applied Materials, Inc. | Methods of curing non-carbon flowable CVD films |
| JP2013516763A (ja)* | 2009-12-30 | 2013-05-13 | アプライド マテリアルズ インコーポレイテッド | フレキシブルな窒素/水素比を使用して生成されるラジカルを用いる誘電体膜成長 |
| US20110159213A1 (en)* | 2009-12-30 | 2011-06-30 | Applied Materials, Inc. | Chemical vapor deposition improvements through radical-component modification |
| US8329262B2 (en) | 2010-01-05 | 2012-12-11 | Applied Materials, Inc. | Dielectric film formation using inert gas excitation |
| SG182336A1 (en) | 2010-01-06 | 2012-08-30 | Applied Materials Inc | Flowable dielectric using oxide liner |
| KR101837648B1 (ko) | 2010-01-07 | 2018-04-19 | 어플라이드 머티어리얼스, 인코포레이티드 | 라디칼-컴포넌트 cvd를 위한 인시츄 오존 경화 |
| JP2013521650A (ja) | 2010-03-05 | 2013-06-10 | アプライド マテリアルズ インコーポレイテッド | ラジカル成分cvdによる共形層 |
| US8012859B1 (en)* | 2010-03-31 | 2011-09-06 | Tokyo Electron Limited | Atomic layer deposition of silicon and silicon-containing films |
| US8956983B2 (en) | 2010-04-15 | 2015-02-17 | Novellus Systems, Inc. | Conformal doping via plasma activated atomic layer deposition and conformal film deposition |
| US9257274B2 (en) | 2010-04-15 | 2016-02-09 | Lam Research Corporation | Gapfill of variable aspect ratio features with a composite PEALD and PECVD method |
| US8637411B2 (en) | 2010-04-15 | 2014-01-28 | Novellus Systems, Inc. | Plasma activated conformal dielectric film deposition |
| US20110256734A1 (en) | 2010-04-15 | 2011-10-20 | Hausmann Dennis M | Silicon nitride films and methods |
| US9611544B2 (en) | 2010-04-15 | 2017-04-04 | Novellus Systems, Inc. | Plasma activated conformal dielectric film deposition |
| US9892917B2 (en) | 2010-04-15 | 2018-02-13 | Lam Research Corporation | Plasma assisted atomic layer deposition of multi-layer films for patterning applications |
| US9997357B2 (en) | 2010-04-15 | 2018-06-12 | Lam Research Corporation | Capped ALD films for doping fin-shaped channel regions of 3-D IC transistors |
| US9076646B2 (en) | 2010-04-15 | 2015-07-07 | Lam Research Corporation | Plasma enhanced atomic layer deposition with pulsed plasma exposure |
| US9373500B2 (en) | 2014-02-21 | 2016-06-21 | Lam Research Corporation | Plasma assisted atomic layer deposition titanium oxide for conformal encapsulation and gapfill applications |
| US9390909B2 (en) | 2013-11-07 | 2016-07-12 | Novellus Systems, Inc. | Soft landing nanolaminates for advanced patterning |
| JP5541223B2 (ja)* | 2010-07-29 | 2014-07-09 | 東京エレクトロン株式会社 | 成膜方法及び成膜装置 |
| US8580699B2 (en) | 2010-09-10 | 2013-11-12 | Applied Materials, Inc. | Embedded catalyst for atomic layer deposition of silicon oxide |
| US8524612B2 (en) | 2010-09-23 | 2013-09-03 | Novellus Systems, Inc. | Plasma-activated deposition of conformal films |
| US9685320B2 (en) | 2010-09-23 | 2017-06-20 | Lam Research Corporation | Methods for depositing silicon oxide |
| US9285168B2 (en) | 2010-10-05 | 2016-03-15 | Applied Materials, Inc. | Module for ozone cure and post-cure moisture treatment |
| US8664127B2 (en) | 2010-10-15 | 2014-03-04 | Applied Materials, Inc. | Two silicon-containing precursors for gapfill enhancing dielectric liner |
| US10283321B2 (en) | 2011-01-18 | 2019-05-07 | Applied Materials, Inc. | Semiconductor processing system and methods using capacitively coupled plasma |
| US8450191B2 (en) | 2011-01-24 | 2013-05-28 | Applied Materials, Inc. | Polysilicon films by HDP-CVD |
| US8716154B2 (en) | 2011-03-04 | 2014-05-06 | Applied Materials, Inc. | Reduced pattern loading using silicon oxide multi-layers |
| US8647993B2 (en) | 2011-04-11 | 2014-02-11 | Novellus Systems, Inc. | Methods for UV-assisted conformal film deposition |
| US8445078B2 (en) | 2011-04-20 | 2013-05-21 | Applied Materials, Inc. | Low temperature silicon oxide conversion |
| US8466073B2 (en) | 2011-06-03 | 2013-06-18 | Applied Materials, Inc. | Capping layer for reduced outgassing |
| US9404178B2 (en) | 2011-07-15 | 2016-08-02 | Applied Materials, Inc. | Surface treatment and deposition for reduced outgassing |
| US8617989B2 (en) | 2011-09-26 | 2013-12-31 | Applied Materials, Inc. | Liner property improvement |
| US8551891B2 (en) | 2011-10-04 | 2013-10-08 | Applied Materials, Inc. | Remote plasma burn-in |
| US8592328B2 (en) | 2012-01-20 | 2013-11-26 | Novellus Systems, Inc. | Method for depositing a chlorine-free conformal sin film |
| US8728955B2 (en) | 2012-02-14 | 2014-05-20 | Novellus Systems, Inc. | Method of plasma activated deposition of a conformal film on a substrate surface |
| US9337018B2 (en) | 2012-06-01 | 2016-05-10 | Air Products And Chemicals, Inc. | Methods for depositing films with organoaminodisilane precursors |
| US9978585B2 (en) | 2012-06-01 | 2018-05-22 | Versum Materials Us, Llc | Organoaminodisilane precursors and methods for depositing films comprising same |
| US8889566B2 (en) | 2012-09-11 | 2014-11-18 | Applied Materials, Inc. | Low cost flowable dielectric films |
| KR102207992B1 (ko) | 2012-10-23 | 2021-01-26 | 램 리써치 코포레이션 | 서브-포화된 원자층 증착 및 등각막 증착 |
| JP6538300B2 (ja) | 2012-11-08 | 2019-07-03 | ノベラス・システムズ・インコーポレーテッドNovellus Systems Incorporated | 感受性基材上にフィルムを蒸着するための方法 |
| SG2013083241A (en) | 2012-11-08 | 2014-06-27 | Novellus Systems Inc | Conformal film deposition for gapfill |
| US9018108B2 (en) | 2013-01-25 | 2015-04-28 | Applied Materials, Inc. | Low shrinkage dielectric films |
| US9796739B2 (en) | 2013-06-26 | 2017-10-24 | Versum Materials Us, Llc | AZA-polysilane precursors and methods for depositing films comprising same |
| US9343317B2 (en) | 2013-07-01 | 2016-05-17 | Micron Technology, Inc. | Methods of forming silicon-containing dielectric materials and semiconductor device structures |
| US9214334B2 (en) | 2014-02-18 | 2015-12-15 | Lam Research Corporation | High growth rate process for conformal aluminum nitride |
| JP6123020B2 (ja)* | 2014-03-13 | 2017-04-26 | 株式会社日立国際電気 | 半導体装置の製造方法、基板処理装置及びプログラム |
| US9412581B2 (en) | 2014-07-16 | 2016-08-09 | Applied Materials, Inc. | Low-K dielectric gapfill by flowable deposition |
| US9478438B2 (en) | 2014-08-20 | 2016-10-25 | Lam Research Corporation | Method and apparatus to deposit pure titanium thin film at low temperature using titanium tetraiodide precursor |
| US9478411B2 (en) | 2014-08-20 | 2016-10-25 | Lam Research Corporation | Method to tune TiOx stoichiometry using atomic layer deposited Ti film to minimize contact resistance for TiOx/Ti based MIS contact scheme for CMOS |
| US9564312B2 (en) | 2014-11-24 | 2017-02-07 | Lam Research Corporation | Selective inhibition in atomic layer deposition of silicon-containing films |
| KR102293874B1 (ko) | 2014-12-10 | 2021-08-25 | 삼성전자주식회사 | 반도체 장치 및 반도체 장치의 제조 방법 |
| US9472392B2 (en) | 2015-01-30 | 2016-10-18 | Applied Materials, Inc. | Step coverage dielectric |
| US10566187B2 (en) | 2015-03-20 | 2020-02-18 | Lam Research Corporation | Ultrathin atomic layer deposition film accuracy thickness control |
| JP6484478B2 (ja)* | 2015-03-25 | 2019-03-13 | 株式会社Kokusai Electric | 半導体装置の製造方法、基板処理装置およびプログラム |
| US9502238B2 (en) | 2015-04-03 | 2016-11-22 | Lam Research Corporation | Deposition of conformal films by atomic layer deposition and atomic layer etch |
| US10526701B2 (en) | 2015-07-09 | 2020-01-07 | Lam Research Corporation | Multi-cycle ALD process for film uniformity and thickness profile modulation |
| CN105668622B (zh)* | 2015-07-30 | 2018-01-30 | 四川大学 | 一种气相原子沉积钛白粉包膜的方法 |
| US20170103888A1 (en)* | 2015-10-13 | 2017-04-13 | Entegris, Inc. | AMINE CATALYSTS FOR LOW TEMPERATURE ALD/CVD SiO2 DEPOSITION USING HEXACHLORODISILANE/H2O |
| US9633838B2 (en) | 2015-12-28 | 2017-04-25 | L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude | Vapor deposition of silicon-containing films using penta-substituted disilanes |
| CN106941103A (zh)* | 2016-01-04 | 2017-07-11 | 中芯国际集成电路制造(北京)有限公司 | Nand存储器的形成方法 |
| US9773643B1 (en) | 2016-06-30 | 2017-09-26 | Lam Research Corporation | Apparatus and method for deposition and etch in gap fill |
| US10062563B2 (en) | 2016-07-01 | 2018-08-28 | Lam Research Corporation | Selective atomic layer deposition with post-dose treatment |
| US10037884B2 (en) | 2016-08-31 | 2018-07-31 | Lam Research Corporation | Selective atomic layer deposition for gapfill using sacrificial underlayer |
| JP6779165B2 (ja)* | 2017-03-29 | 2020-11-04 | 東京エレクトロン株式会社 | 金属汚染防止方法及び成膜装置 |
| US10269559B2 (en) | 2017-09-13 | 2019-04-23 | Lam Research Corporation | Dielectric gapfill of high aspect ratio features utilizing a sacrificial etch cap layer |
| US20200040454A1 (en)* | 2018-08-06 | 2020-02-06 | Lam Research Corporation | Method to increase deposition rate of ald process |
| JP6946248B2 (ja)* | 2018-09-26 | 2021-10-06 | 株式会社Kokusai Electric | 半導体装置の製造方法、基板処理装置およびプログラム |
| KR102726216B1 (ko) | 2019-05-01 | 2024-11-04 | 램 리써치 코포레이션 | 변조된 원자 층 증착 |
| JP2022534793A (ja) | 2019-06-07 | 2022-08-03 | ラム リサーチ コーポレーション | 原子層堆積時における膜特性の原位置制御 |
| KR20230050987A (ko)* | 2021-10-08 | 2023-04-17 | 삼성전자주식회사 | 이차원 물질 구조체와 이를 포함하는 반도체 소자 및 반도체 소자의 제조방법 |
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH09129586A (ja)* | 1995-11-06 | 1997-05-16 | Central Glass Co Ltd | アルコキシシラン非完全分解物のクリーニング方法 |
| US6090442A (en)* | 1997-04-14 | 2000-07-18 | University Technology Corporation | Method of growing films on substrates at room temperatures using catalyzed binary reaction sequence chemistry |
| KR20020085487A (ko)* | 2001-05-01 | 2002-11-16 | 삼성전자 주식회사 | 헥사 클로로 디실란 및 암모니아를 사용한 원자층의적층을 이용하여 실리콘을 함유하는 박막을 형성하는 방법 |
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| NL110370C (ko) | 1962-03-16 | |||
| US5037514A (en)* | 1986-01-06 | 1991-08-06 | Semiconductor Energy Laboratory Co., Ltd. | Silicon oxide depositing method |
| US5470800A (en) | 1992-04-03 | 1995-11-28 | Sony Corporation | Method for forming an interlayer film |
| JPH06132276A (ja) | 1992-10-22 | 1994-05-13 | Kawasaki Steel Corp | 半導体膜形成方法 |
| JP3836553B2 (ja) | 1996-12-26 | 2006-10-25 | 独立行政法人科学技術振興機構 | シリコン系絶縁膜の製造方法 |
| KR100275738B1 (ko) | 1998-08-07 | 2000-12-15 | 윤종용 | 원자층 증착법을 이용한 박막 제조방법 |
| US6037275A (en) | 1998-08-27 | 2000-03-14 | Alliedsignal Inc. | Nanoporous silica via combined stream deposition |
| US6231989B1 (en)* | 1998-11-20 | 2001-05-15 | Dow Corning Corporation | Method of forming coatings |
| JP2001002990A (ja) | 1999-06-21 | 2001-01-09 | Jsr Corp | 膜形成用組成物、膜の形成方法および低密度膜 |
| SG99871A1 (en) | 1999-10-25 | 2003-11-27 | Motorola Inc | Method for fabricating a semiconductor structure including a metal oxide interface with silicon |
| FI118804B (fi) | 1999-12-03 | 2008-03-31 | Asm Int | Menetelmä oksidikalvojen kasvattamiseksi |
| JP5016767B2 (ja)* | 2000-03-07 | 2012-09-05 | エーエスエム インターナショナル エヌ.ヴェー. | 傾斜薄膜の形成方法 |
| JP3549193B2 (ja) | 2000-03-31 | 2004-08-04 | キヤノン販売株式会社 | 被成膜面の改質方法及び半導体装置の製造方法 |
| KR100467366B1 (ko) | 2000-06-30 | 2005-01-24 | 주식회사 하이닉스반도체 | 원자층 증착법을 이용한 지르코늄산화막 형성방법 |
| KR100378186B1 (ko)* | 2000-10-19 | 2003-03-29 | 삼성전자주식회사 | 원자층 증착법으로 형성된 박막이 채용된 반도체 소자 및그 제조방법 |
| KR100385947B1 (ko) | 2000-12-06 | 2003-06-02 | 삼성전자주식회사 | 원자층 증착 방법에 의한 박막 형성 방법 |
| US6391803B1 (en) | 2001-06-20 | 2002-05-21 | Samsung Electronics Co., Ltd. | Method of forming silicon containing thin films by atomic layer deposition utilizing trisdimethylaminosilane |
| US6861334B2 (en)* | 2001-06-21 | 2005-03-01 | Asm International, N.V. | Method of fabricating trench isolation structures for integrated circuits using atomic layer deposition |
| US6664156B1 (en)* | 2002-07-31 | 2003-12-16 | Chartered Semiconductor Manufacturing, Ltd | Method for forming L-shaped spacers with precise width control |
| US7531679B2 (en) | 2002-11-14 | 2009-05-12 | Advanced Technology Materials, Inc. | Composition and method for low temperature deposition of silicon-containing films such as films including silicon nitride, silicon dioxide and/or silicon-oxynitride |
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH09129586A (ja)* | 1995-11-06 | 1997-05-16 | Central Glass Co Ltd | アルコキシシラン非完全分解物のクリーニング方法 |
| US6090442A (en)* | 1997-04-14 | 2000-07-18 | University Technology Corporation | Method of growing films on substrates at room temperatures using catalyzed binary reaction sequence chemistry |
| KR20020085487A (ko)* | 2001-05-01 | 2002-11-16 | 삼성전자 주식회사 | 헥사 클로로 디실란 및 암모니아를 사용한 원자층의적층을 이용하여 실리콘을 함유하는 박막을 형성하는 방법 |
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20200060679A (ko)* | 2018-11-21 | 2020-06-01 | 타이완 세미콘덕터 매뉴팩쳐링 컴퍼니 리미티드 | 탄소 및 질소 도핑된 막으로의 갭 충전 |
| KR20200060678A (ko)* | 2018-11-21 | 2020-06-01 | 타이완 세미콘덕터 매뉴팩쳐링 컴퍼니 리미티드 | 내산화성을 위한 실리콘 산화물 층 및 그 형성 방법 |
| KR102288343B1 (ko)* | 2018-11-21 | 2021-08-11 | 타이완 세미콘덕터 매뉴팩쳐링 컴퍼니 리미티드 | 탄소 및 질소 도핑된 막으로의 갭 충전 |
| KR102301460B1 (ko)* | 2018-11-21 | 2021-09-15 | 타이완 세미콘덕터 매뉴팩쳐링 컴퍼니 리미티드 | 내산화성을 위한 실리콘 산화물 층 및 그 형성 방법 |
| US11211243B2 (en) | 2018-11-21 | 2021-12-28 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method of filling gaps with carbon and nitrogen doped film |
| US11393711B2 (en) | 2018-11-21 | 2022-07-19 | Taiwan Semiconductor Manufacturing Company, Ltd. | Silicon oxide layer for oxidation resistance and method forming same |
| US11742201B2 (en) | 2018-11-21 | 2023-08-29 | Taiwan Semiconductor Manufacturing Company, Ltd | Method of filling gaps with carbon and nitrogen doped film |
| US12148652B2 (en) | 2018-11-21 | 2024-11-19 | Taiwan Semiconductor Manufacturing Company, Ltd. | Silicon oxide layer for oxidation resistance and method forming same |
| US12368044B2 (en) | 2018-11-21 | 2025-07-22 | Taiwan Semiconductor Manufacturing Company, Ltd. | Methods of forming dielectric layers through deposition and anneal processes |
| Publication number | Publication date |
|---|---|
| KR20030084110A (ko) | 2003-11-01 |
| US20060090694A1 (en) | 2006-05-04 |
| US20030203113A1 (en) | 2003-10-30 |
| US7077904B2 (en) | 2006-07-18 |
| Publication | Publication Date | Title |
|---|---|---|
| KR100468729B1 (ko) | Hcd 소스를 이용하여 실리콘 산화막을 원자층 증착하는방법 | |
| KR101427142B1 (ko) | 금속 규산염 막의 원자층 증착 | |
| US7488694B2 (en) | Methods of forming silicon nitride layers using nitrogenous compositions | |
| JP4704618B2 (ja) | ジルコニウム酸化膜の製造方法 | |
| US7429541B2 (en) | Method of forming trench isolation in the fabrication of integrated circuitry | |
| KR100434186B1 (ko) | 트리스디메틸아미노실란을 이용한 원자층 적층으로실리콘을 함유하는 박막을 형성하는 방법 | |
| KR100443085B1 (ko) | 헥사 클로로 디실란 및 암모니아를 사용한 원자층의적층을 이용하여 실리콘을 함유하는 박막을 형성하는 방법 | |
| US7084076B2 (en) | Method for forming silicon dioxide film using siloxane | |
| KR100385947B1 (ko) | 원자층 증착 방법에 의한 박막 형성 방법 | |
| KR100505668B1 (ko) | 원자층 증착 방법에 의한 실리콘 산화막 형성 방법 | |
| CN111524788A (zh) | 氧化硅的拓扑选择性膜形成的方法 | |
| KR20080050510A (ko) | 배치 ald 반응기에 대한 처리 공정 | |
| JPH1187341A (ja) | 成膜方法及び成膜装置 | |
| US12359315B2 (en) | Deposition of oxides and nitrides | |
| KR20090092728A (ko) | 원자층 증착 기술을 이용한 도핑 방법 | |
| US20220359215A1 (en) | Area-selective etching | |
| KR20030064083A (ko) | 원자층 적층을 이용하여 실리콘 나이트라이드 박막을형성하는 방법 | |
| KR20050094690A (ko) | 실리콘싸이오할라이드를 이용한 실리콘산화 막 형성방법 | |
| TWI895278B (zh) | 包括介電層之結構、其形成方法及執行形成方法的反應器系統 | |
| US20240318311A1 (en) | Method for reducing incubation period of silicon nitride layer deposition, structure formed using the method, and system for performing the method | |
| KR20050015442A (ko) | 엠오씨브이디에 의한 산화하프늄 박막 증착 방법 | |
| KR20240168070A (ko) | 촉매 제어를 통한 선택적 증착 방법. | |
| KR20050028751A (ko) | 실릴아민을 이용한 박막 형성방법 | |
| TW202403076A (zh) | 有機材料之選擇性沉積 | |
| JP2024152724A (ja) | 非晶質炭素膜及びその蒸着方法 |
| Date | Code | Title | Description |
|---|---|---|---|
| A201 | Request for examination | ||
| PA0109 | Patent application | St.27 status event code:A-0-1-A10-A12-nap-PA0109 | |
| PA0201 | Request for examination | St.27 status event code:A-1-2-D10-D11-exm-PA0201 | |
| D13-X000 | Search requested | St.27 status event code:A-1-2-D10-D13-srh-X000 | |
| PG1501 | Laying open of application | St.27 status event code:A-1-1-Q10-Q12-nap-PG1501 | |
| D14-X000 | Search report completed | St.27 status event code:A-1-2-D10-D14-srh-X000 | |
| N231 | Notification of change of applicant | ||
| PN2301 | Change of applicant | St.27 status event code:A-3-3-R10-R13-asn-PN2301 St.27 status event code:A-3-3-R10-R11-asn-PN2301 | |
| R17-X000 | Change to representative recorded | St.27 status event code:A-3-3-R10-R17-oth-X000 | |
| P11-X000 | Amendment of application requested | St.27 status event code:A-2-2-P10-P11-nap-X000 | |
| P13-X000 | Application amended | St.27 status event code:A-2-2-P10-P13-nap-X000 | |
| R15-X000 | Change to inventor requested | St.27 status event code:A-3-3-R10-R15-oth-X000 | |
| R16-X000 | Change to inventor recorded | St.27 status event code:A-3-3-R10-R16-oth-X000 | |
| E902 | Notification of reason for refusal | ||
| PE0902 | Notice of grounds for rejection | St.27 status event code:A-1-2-D10-D21-exm-PE0902 | |
| P11-X000 | Amendment of application requested | St.27 status event code:A-2-2-P10-P11-nap-X000 | |
| P13-X000 | Application amended | St.27 status event code:A-2-2-P10-P13-nap-X000 | |
| E701 | Decision to grant or registration of patent right | ||
| PE0701 | Decision of registration | St.27 status event code:A-1-2-D10-D22-exm-PE0701 | |
| GRNT | Written decision to grant | ||
| PR0701 | Registration of establishment | St.27 status event code:A-2-4-F10-F11-exm-PR0701 | |
| PR1002 | Payment of registration fee | St.27 status event code:A-2-2-U10-U11-oth-PR1002 Fee payment year number:1 | |
| PG1601 | Publication of registration | St.27 status event code:A-4-4-Q10-Q13-nap-PG1601 | |
| PN2301 | Change of applicant | St.27 status event code:A-5-5-R10-R13-asn-PN2301 St.27 status event code:A-5-5-R10-R11-asn-PN2301 | |
| PN2301 | Change of applicant | St.27 status event code:A-5-5-R10-R13-asn-PN2301 St.27 status event code:A-5-5-R10-R11-asn-PN2301 | |
| PR1001 | Payment of annual fee | St.27 status event code:A-4-4-U10-U11-oth-PR1001 Fee payment year number:4 | |
| PR1001 | Payment of annual fee | St.27 status event code:A-4-4-U10-U11-oth-PR1001 Fee payment year number:5 | |
| PR1001 | Payment of annual fee | St.27 status event code:A-4-4-U10-U11-oth-PR1001 Fee payment year number:6 | |
| PR1001 | Payment of annual fee | St.27 status event code:A-4-4-U10-U11-oth-PR1001 Fee payment year number:7 | |
| PR1001 | Payment of annual fee | St.27 status event code:A-4-4-U10-U11-oth-PR1001 Fee payment year number:8 | |
| R18-X000 | Changes to party contact information recorded | St.27 status event code:A-5-5-R10-R18-oth-X000 | |
| FPAY | Annual fee payment | Payment date:20130102 Year of fee payment:9 | |
| PR1001 | Payment of annual fee | St.27 status event code:A-4-4-U10-U11-oth-PR1001 Fee payment year number:9 | |
| FPAY | Annual fee payment | Payment date:20140103 Year of fee payment:10 | |
| PR1001 | Payment of annual fee | St.27 status event code:A-4-4-U10-U11-oth-PR1001 Fee payment year number:10 | |
| FPAY | Annual fee payment | Payment date:20141231 Year of fee payment:11 | |
| PR1001 | Payment of annual fee | St.27 status event code:A-4-4-U10-U11-oth-PR1001 Fee payment year number:11 | |
| FPAY | Annual fee payment | Payment date:20160104 Year of fee payment:12 | |
| PR1001 | Payment of annual fee | St.27 status event code:A-4-4-U10-U11-oth-PR1001 Fee payment year number:12 | |
| FPAY | Annual fee payment | Payment date:20170102 Year of fee payment:13 | |
| PR1001 | Payment of annual fee | St.27 status event code:A-4-4-U10-U11-oth-PR1001 Fee payment year number:13 | |
| PR1001 | Payment of annual fee | St.27 status event code:A-4-4-U10-U11-oth-PR1001 Fee payment year number:14 | |
| PR1001 | Payment of annual fee | St.27 status event code:A-4-4-U10-U11-oth-PR1001 Fee payment year number:15 | |
| PR1001 | Payment of annual fee | St.27 status event code:A-4-4-U10-U11-oth-PR1001 Fee payment year number:16 | |
| PR1001 | Payment of annual fee | St.27 status event code:A-4-4-U10-U11-oth-PR1001 Fee payment year number:17 | |
| PC1903 | Unpaid annual fee | St.27 status event code:A-4-4-U10-U13-oth-PC1903 Not in force date:20220121 Payment event data comment text:Termination Category : DEFAULT_OF_REGISTRATION_FEE | |
| PC1903 | Unpaid annual fee | St.27 status event code:N-4-6-H10-H13-oth-PC1903 Ip right cessation event data comment text:Termination Category : DEFAULT_OF_REGISTRATION_FEE Not in force date:20220121 |