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JPS6489318A - Vapor growth susceptor - Google Patents

Vapor growth susceptor

Info

Publication number
JPS6489318A
JPS6489318AJP24523087AJP24523087AJPS6489318AJP S6489318 AJPS6489318 AJP S6489318AJP 24523087 AJP24523087 AJP 24523087AJP 24523087 AJP24523087 AJP 24523087AJP S6489318 AJPS6489318 AJP S6489318A
Authority
JP
Japan
Prior art keywords
wafer
recess
periphery
groove
susceptor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP24523087A
Other languages
Japanese (ja)
Inventor
Yoshio Haseno
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC CorpfiledCriticalNEC Corp
Priority to JP24523087ApriorityCriticalpatent/JPS6489318A/en
Publication of JPS6489318ApublicationCriticalpatent/JPS6489318A/en
Pendinglegal-statusCriticalCurrent

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Abstract

PURPOSE:To generate uniform spherical recesses and to prevent the periphery of a wafer from abnormally growing by allowing a section for supporting the wafer at its center to remain and providing a deep groove on the periphery. CONSTITUTION:In a vapor growing susceptor 1 having spherical recesses 2 for placing wafers, a section having smaller area than that of the wafer remains at its center as the bottom of the recess 2, and a deeper groove 28 than the depth 4 of the recess 2 is annularly formed on the periphery of the bottom in contact with the vertical side face 2A of the recess 2. The groove 2B is covered with silicon carbide 1A on the whole surface of the carbon core of the susceptor 1, thereby eliminating an influence to the wafer due to the atmosphere and temperature distribution of the carbon core material at the time of vapor chemical reaction. It can prevent the periphery of the wafer from abnormally growing by utilizing the groove 2A formed by retaining as the bottom of the recess 2.
JP24523087A1987-09-291987-09-29Vapor growth susceptorPendingJPS6489318A (en)

Priority Applications (1)

Application NumberPriority DateFiling DateTitle
JP24523087AJPS6489318A (en)1987-09-291987-09-29Vapor growth susceptor

Applications Claiming Priority (1)

Application NumberPriority DateFiling DateTitle
JP24523087AJPS6489318A (en)1987-09-291987-09-29Vapor growth susceptor

Publications (1)

Publication NumberPublication Date
JPS6489318Atrue JPS6489318A (en)1989-04-03

Family

ID=17130591

Family Applications (1)

Application NumberTitlePriority DateFiling Date
JP24523087APendingJPS6489318A (en)1987-09-291987-09-29Vapor growth susceptor

Country Status (1)

CountryLink
JP (1)JPS6489318A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication numberPriority datePublication dateAssigneeTitle
WO2003096396A1 (en)*2002-05-072003-11-20Mattson Technology, IncProcess and system for heating semiconductor substrates in a processing chamber containing a susceptor
WO2013133204A1 (en)*2012-03-072013-09-12東洋炭素株式会社Susceptor
JP2017022320A (en)*2015-07-142017-01-26昭和電工株式会社Wafer support table, wafer support body, and chemical vapor deposition apparatus
JP2021082793A (en)*2019-11-222021-05-27昭和電工株式会社APPARATUS FOR PRODUCING SiC EPITAXIAL WAFER AND METHOD FOR PRODUCING SiC EPITAXIAL WAFER

Citations (2)

* Cited by examiner, † Cited by third party
Publication numberPriority datePublication dateAssigneeTitle
JPS5352370A (en)*1976-10-251978-05-12Hitachi LtdWafer susceptor
JPS5828827A (en)*1981-08-121983-02-19Matsushita Electric Ind Co Ltd Chemical vapor deposition film forming equipment

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication numberPriority datePublication dateAssigneeTitle
JPS5352370A (en)*1976-10-251978-05-12Hitachi LtdWafer susceptor
JPS5828827A (en)*1981-08-121983-02-19Matsushita Electric Ind Co Ltd Chemical vapor deposition film forming equipment

Cited By (7)

* Cited by examiner, † Cited by third party
Publication numberPriority datePublication dateAssigneeTitle
WO2003096396A1 (en)*2002-05-072003-11-20Mattson Technology, IncProcess and system for heating semiconductor substrates in a processing chamber containing a susceptor
JP2005530335A (en)*2002-05-072005-10-06マットソン テクノロジイ インコーポレイテッド Process and system for heating a semiconductor substrate in a processing chamber including a susceptor
JP4786177B2 (en)*2002-05-072011-10-05マットソン テクノロジイ インコーポレイテッド Process and system for heating a semiconductor substrate in a processing chamber including a susceptor
WO2013133204A1 (en)*2012-03-072013-09-12東洋炭素株式会社Susceptor
JP2013187278A (en)*2012-03-072013-09-19Toyo Tanso KkSusceptor
JP2017022320A (en)*2015-07-142017-01-26昭和電工株式会社Wafer support table, wafer support body, and chemical vapor deposition apparatus
JP2021082793A (en)*2019-11-222021-05-27昭和電工株式会社APPARATUS FOR PRODUCING SiC EPITAXIAL WAFER AND METHOD FOR PRODUCING SiC EPITAXIAL WAFER

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