| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP22028387AJPS6464324A (en) | 1987-09-04 | 1987-09-04 | Electrode for plasma etching |
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP22028387AJPS6464324A (en) | 1987-09-04 | 1987-09-04 | Electrode for plasma etching |
| Publication Number | Publication Date |
|---|---|
| JPS6464324Atrue JPS6464324A (en) | 1989-03-10 |
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP22028387APendingJPS6464324A (en) | 1987-09-04 | 1987-09-04 | Electrode for plasma etching |
| Country | Link |
|---|---|
| JP (1) | JPS6464324A (ja) |
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH03138381A (ja)* | 1989-10-20 | 1991-06-12 | Ibiden Co Ltd | プラズマエッチング用電極板 |
| EP0595054A1 (en)* | 1992-10-30 | 1994-05-04 | Applied Materials, Inc. | Method for processing semiconductor wafers at temperatures exceeding 400 degrees C. |
| JPH06163428A (ja)* | 1992-11-26 | 1994-06-10 | Ngk Insulators Ltd | 耐蝕性部材 |
| JPH07153370A (ja)* | 1993-11-30 | 1995-06-16 | Kyocera Corp | 放電管 |
| US5482749A (en)* | 1993-06-28 | 1996-01-09 | Applied Materials, Inc. | Pretreatment process for treating aluminum-bearing surfaces of deposition chamber prior to deposition of tungsten silicide coating on substrate therein |
| US5510297A (en)* | 1993-06-28 | 1996-04-23 | Applied Materials, Inc. | Process for uniform deposition of tungsten silicide on semiconductor wafers by treatment of susceptor having aluminum nitride surface thereon with tungsten silicide after cleaning of susceptor |
| US6090706A (en)* | 1993-06-28 | 2000-07-18 | Applied Materials, Inc. | Preconditioning process for treating deposition chamber prior to deposition of tungsten silicide coating on active substrates therein |
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58209111A (ja)* | 1982-05-31 | 1983-12-06 | Toshiba Corp | プラズマ発生装置 |
| JPS6116524A (ja)* | 1984-07-03 | 1986-01-24 | Nec Corp | ドライエッチング方法 |
| JPS61246382A (ja)* | 1985-04-24 | 1986-11-01 | Nec Corp | ドライエツチング装置 |
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58209111A (ja)* | 1982-05-31 | 1983-12-06 | Toshiba Corp | プラズマ発生装置 |
| JPS6116524A (ja)* | 1984-07-03 | 1986-01-24 | Nec Corp | ドライエッチング方法 |
| JPS61246382A (ja)* | 1985-04-24 | 1986-11-01 | Nec Corp | ドライエツチング装置 |
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH03138381A (ja)* | 1989-10-20 | 1991-06-12 | Ibiden Co Ltd | プラズマエッチング用電極板 |
| EP0595054A1 (en)* | 1992-10-30 | 1994-05-04 | Applied Materials, Inc. | Method for processing semiconductor wafers at temperatures exceeding 400 degrees C. |
| JPH06163428A (ja)* | 1992-11-26 | 1994-06-10 | Ngk Insulators Ltd | 耐蝕性部材 |
| US5482749A (en)* | 1993-06-28 | 1996-01-09 | Applied Materials, Inc. | Pretreatment process for treating aluminum-bearing surfaces of deposition chamber prior to deposition of tungsten silicide coating on substrate therein |
| US5510297A (en)* | 1993-06-28 | 1996-04-23 | Applied Materials, Inc. | Process for uniform deposition of tungsten silicide on semiconductor wafers by treatment of susceptor having aluminum nitride surface thereon with tungsten silicide after cleaning of susceptor |
| US6090706A (en)* | 1993-06-28 | 2000-07-18 | Applied Materials, Inc. | Preconditioning process for treating deposition chamber prior to deposition of tungsten silicide coating on active substrates therein |
| JPH07153370A (ja)* | 1993-11-30 | 1995-06-16 | Kyocera Corp | 放電管 |
| Publication | Publication Date | Title |
|---|---|---|
| EP0846667A3 (en) | Ceramic parts and a producing process thereof | |
| JPS6464324A (en) | Electrode for plasma etching | |
| JPH0456765B2 (ja) | ||
| EP0177894A3 (en) | Method of producing metallic silicon particularly for use in the photovoltaic industry | |
| CA2177012A1 (en) | Segmented Substrate for Improved Arc-Jet Diamond Deposition | |
| JPS645026A (en) | Bonding tool | |
| IL90778A0 (en) | Production of a protective film on a magnesium based substrate | |
| JPS6464325A (en) | Electrode for plasma etching | |
| JPS6435819A (en) | Manufacture of superconducting membrane | |
| KR100476350B1 (ko) | 플라즈마처리장치용전극판의제조방법 | |
| US5486263A (en) | Etching a diamond body with a molten or partially molten metal | |
| JPS6445792A (en) | Production of article coated with pyrolytic boron nitride | |
| JPS56130466A (en) | Film forming method | |
| JPS55141561A (en) | Surface treatment of metallic material | |
| JPS6415937A (en) | Normal atmospheric pressure cvd system | |
| JPS5727914A (en) | Manufacture of thin silicon carbide film | |
| JPS6414914A (en) | Jig for manufacture of semiconductor | |
| JPS54152465A (en) | Manufacture of epitaxial wafer | |
| JPS56140021A (en) | Manufacture of silicon carbide thin film | |
| JPS56100512A (en) | Elastic surface wave element and its production | |
| JPS6452053A (en) | Production of superconducting ceramic body | |
| JPS643097A (en) | Substrate having high heat conductivity | |
| JPS5721834A (en) | Semiconductor substrate | |
| JPS6487591A (en) | Production of crucible for pulling up semiconductor | |
| SU660729A1 (ru) | Способ создани электроакустического контакта |