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JPS6464324A - Electrode for plasma etching - Google Patents

Electrode for plasma etching

Info

Publication number
JPS6464324A
JPS6464324AJP22028387AJP22028387AJPS6464324AJP S6464324 AJPS6464324 AJP S6464324AJP 22028387 AJP22028387 AJP 22028387AJP 22028387 AJP22028387 AJP 22028387AJP S6464324 AJPS6464324 AJP S6464324A
Authority
JP
Japan
Prior art keywords
film
base material
electrode
graphite base
si3n4
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP22028387A
Other languages
Japanese (ja)
Inventor
Hiroaki Tanji
Kenji Kadota
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Denka Co Ltd
Original Assignee
Denki Kagaku Kogyo KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Denki Kagaku Kogyo KKfiledCriticalDenki Kagaku Kogyo KK
Priority to JP22028387ApriorityCriticalpatent/JPS6464324A/en
Publication of JPS6464324ApublicationCriticalpatent/JPS6464324A/en
Pendinglegal-statusCriticalCurrent

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Abstract

PURPOSE:To remarkably prolong the life of an electrode and to improve production efficiency by forming a polycrystalline Si3N4 or AlN film on a graphite base material. CONSTITUTION:A high temperature thermal CVD method which utilizes heat and a thermal plasma CVD method which utilizes plasma with the previous CVD method are preferable as a method of forming a polycrystalline Si3N4 or AlN film. A polycrystalline Si3N4 or AlN protective film is general to precipitate it on a graphite base material formed in a desired electrode shape as an electrode, but after the protective film is formed on the graphite base material, it may be formed in the electrode shape. The graphite base material preferably has high density and high strength, and a rigid bonding strength is obtained by roughing the surface. The thickness of the film is preferably 5mum or more to form a continuously dense film and 500mum or less to prevent it from self- cracking or exfoliating due to an internal stress.
JP22028387A1987-09-041987-09-04Electrode for plasma etchingPendingJPS6464324A (en)

Priority Applications (1)

Application NumberPriority DateFiling DateTitle
JP22028387AJPS6464324A (en)1987-09-041987-09-04Electrode for plasma etching

Applications Claiming Priority (1)

Application NumberPriority DateFiling DateTitle
JP22028387AJPS6464324A (en)1987-09-041987-09-04Electrode for plasma etching

Publications (1)

Publication NumberPublication Date
JPS6464324Atrue JPS6464324A (en)1989-03-10

Family

ID=16748744

Family Applications (1)

Application NumberTitlePriority DateFiling Date
JP22028387APendingJPS6464324A (en)1987-09-041987-09-04Electrode for plasma etching

Country Status (1)

CountryLink
JP (1)JPS6464324A (en)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication numberPriority datePublication dateAssigneeTitle
JPH03138381A (en)*1989-10-201991-06-12Ibiden Co LtdElectrode plate for plasma etching
EP0595054A1 (en)*1992-10-301994-05-04Applied Materials, Inc.Method for processing semiconductor wafers at temperatures exceeding 400 degrees C.
JPH06163428A (en)*1992-11-261994-06-10Ngk Insulators LtdCorrosion-resistant member
JPH07153370A (en)*1993-11-301995-06-16Kyocera Corp Discharge tube
US5482749A (en)*1993-06-281996-01-09Applied Materials, Inc.Pretreatment process for treating aluminum-bearing surfaces of deposition chamber prior to deposition of tungsten silicide coating on substrate therein
US5510297A (en)*1993-06-281996-04-23Applied Materials, Inc.Process for uniform deposition of tungsten silicide on semiconductor wafers by treatment of susceptor having aluminum nitride surface thereon with tungsten silicide after cleaning of susceptor
US6090706A (en)*1993-06-282000-07-18Applied Materials, Inc.Preconditioning process for treating deposition chamber prior to deposition of tungsten silicide coating on active substrates therein

Citations (3)

* Cited by examiner, † Cited by third party
Publication numberPriority datePublication dateAssigneeTitle
JPS58209111A (en)*1982-05-311983-12-06Toshiba Corp plasma generator
JPS6116524A (en)*1984-07-031986-01-24Nec CorpDry etching device
JPS61246382A (en)*1985-04-241986-11-01Nec CorpDry etching device

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication numberPriority datePublication dateAssigneeTitle
JPS58209111A (en)*1982-05-311983-12-06Toshiba Corp plasma generator
JPS6116524A (en)*1984-07-031986-01-24Nec CorpDry etching device
JPS61246382A (en)*1985-04-241986-11-01Nec CorpDry etching device

Cited By (7)

* Cited by examiner, † Cited by third party
Publication numberPriority datePublication dateAssigneeTitle
JPH03138381A (en)*1989-10-201991-06-12Ibiden Co LtdElectrode plate for plasma etching
EP0595054A1 (en)*1992-10-301994-05-04Applied Materials, Inc.Method for processing semiconductor wafers at temperatures exceeding 400 degrees C.
JPH06163428A (en)*1992-11-261994-06-10Ngk Insulators LtdCorrosion-resistant member
US5482749A (en)*1993-06-281996-01-09Applied Materials, Inc.Pretreatment process for treating aluminum-bearing surfaces of deposition chamber prior to deposition of tungsten silicide coating on substrate therein
US5510297A (en)*1993-06-281996-04-23Applied Materials, Inc.Process for uniform deposition of tungsten silicide on semiconductor wafers by treatment of susceptor having aluminum nitride surface thereon with tungsten silicide after cleaning of susceptor
US6090706A (en)*1993-06-282000-07-18Applied Materials, Inc.Preconditioning process for treating deposition chamber prior to deposition of tungsten silicide coating on active substrates therein
JPH07153370A (en)*1993-11-301995-06-16Kyocera Corp Discharge tube

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