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JPS6460011A - High frequency transistor amplifier - Google Patents

High frequency transistor amplifier

Info

Publication number
JPS6460011A
JPS6460011AJP21525587AJP21525587AJPS6460011AJP S6460011 AJPS6460011 AJP S6460011AJP 21525587 AJP21525587 AJP 21525587AJP 21525587 AJP21525587 AJP 21525587AJP S6460011 AJPS6460011 AJP S6460011A
Authority
JP
Japan
Prior art keywords
high frequency
energy consumption
signal level
input signal
frequency input
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP21525587A
Other languages
Japanese (ja)
Inventor
Norio Futagawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC CorpfiledCriticalNEC Corp
Priority to JP21525587ApriorityCriticalpatent/JPS6460011A/en
Publication of JPS6460011ApublicationCriticalpatent/JPS6460011A/en
Pendinglegal-statusCriticalCurrent

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Abstract

PURPOSE:To reduce energy consumption, by lowering the energy consumption, when a high frequency input signal level is small, compared with the energy consumption, when the said high frequency input signal level is large. CONSTITUTION:A level detecting circuit 3 detects the high frequency signal level inputted to a transistor amplifying circuit 1, and a control circuit 4 changes (controls) the bias output voltage of a power source circuit 2 according to the size of the high frequency signal level detected in the level detecting circuit 3. That is, when the high frequency input signal level is small, since it is needless to enlarge the output performance of the transistor amplifying circuit 1, the bias voltage value is minimized, and the energy consumption is reduced. On the contrary, when the high frequency input signal level is large, since it is required to enlarge the output performance of the transistor amplifying circuit 1, the bias voltage value is enlarged, and the energy consumption is enlarged. Thus, the energy consumption can be reduced.
JP21525587A1987-08-311987-08-31High frequency transistor amplifierPendingJPS6460011A (en)

Priority Applications (1)

Application NumberPriority DateFiling DateTitle
JP21525587AJPS6460011A (en)1987-08-311987-08-31High frequency transistor amplifier

Applications Claiming Priority (1)

Application NumberPriority DateFiling DateTitle
JP21525587AJPS6460011A (en)1987-08-311987-08-31High frequency transistor amplifier

Publications (1)

Publication NumberPublication Date
JPS6460011Atrue JPS6460011A (en)1989-03-07

Family

ID=16669286

Family Applications (1)

Application NumberTitlePriority DateFiling Date
JP21525587APendingJPS6460011A (en)1987-08-311987-08-31High frequency transistor amplifier

Country Status (1)

CountryLink
JP (1)JPS6460011A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication numberPriority datePublication dateAssigneeTitle
US5403779A (en)*1992-02-261995-04-04International Business Machines CorporationRefractory metal capped low resistivity metal conductor lines and vias formed using PVD and CVD

Cited By (1)

* Cited by examiner, † Cited by third party
Publication numberPriority datePublication dateAssigneeTitle
US5403779A (en)*1992-02-261995-04-04International Business Machines CorporationRefractory metal capped low resistivity metal conductor lines and vias formed using PVD and CVD

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