JPS6423564A - Space type semiconductor device - Google Patents

Abstract

PURPOSE:To make a device high-density and high-speed, by forming a wiring body on at least one layer of semiconductor single-crystalline layer so that it contains a passive element composed of materials other than a semiconductor. CONSTITUTION:A (n) channel MOSFET 4 is formed on a first silicon layer 1. Wiring electrodes 13-1-13-4 of the lowermost layers are formed with prescribed patterns on a protective insulating film 9 and on a protect insulating film 11 which covers a wiring electrode 10 except the upper surface of the electrode 10. After an interlayer insulating SiO2 film 14-3 and the wiring electrode 13-4 are covered with a polyimide film layer 16, the layer 16 is heated to become semihard and stuck on a second silicon layer 2, so that p-type impurities are diffused into the diffusion layer 6 and the MOSFET 4 becomes a (p) channel. A multilayer interconnection body 12' is formed ranging only up to the wiring electrode 13-3. A through hole 18 is formed, and a protection substrate 20 is stuck on an upper surface of the second silicon layer 2 with wax 21 in between, and a polyimide layer 16 is formed on a rear surface of the layer 2. After a sticking process, the upper surface of the second silicon layer 2 is covered with metallic films 22, 23, and a burial metallic layer 25 is formed by burial processing. Next the upper surface of the wiring electrode 26 is covered with the polyimide film layer 16. A third silicon layer 3 is stuck similarly.