【発明の詳細な説明】〔産業上の利用分野〕本発明は、基板１に形成された複数の１電パターンに対
し、夫々対応する他の導電パターンあるいは他の集私回
路（以下ＩＣと略記する）等の電子部品のリードの様な
導電体との接続する場合においての、接続特性向上に関
するものである。[Detailed Description of the Invention] [Industrial Application Field] The present invention provides a plurality of single-conductor patterns formed on a substrate 1, respectively corresponding to other conductive patterns or other integrated circuits (hereinafter abbreviated as IC). This invention relates to improving the connection characteristics when connecting to conductors such as leads of electronic components such as electronic components.
基板上に形成された複数の導電パターンと、該導電パタ
ーンに対応して電気的に接続される複数Ｃ）４１！Ｌパ
ターンあるいは工Ｃとの間に介在させることにより、両
者を電気的に接続する異方性導電ｆｆ１Ｋおｈて、絶縁
性薄膜に円筒状直孔を開けるとともに、内壁を導電性薄
膜で被覆し異方性を付与したことＫより、接続特性の向
上を可能にしたものである。A plurality of conductive patterns formed on a substrate and a plurality of electrically connected corresponding conductive patterns C) 41! An anisotropic conductor is inserted between L pattern or C to electrically connect the two, and a cylindrical straight hole is made in the insulating thin film, and the inner wall is covered with a conductive thin film. The addition of anisotropy makes it possible to improve the connection characteristics.
従来の異方性導電膜を用いた接続には、カーボンファイ
バー大シの導電性熱溶融型接着剤と、絶縁性熱溶融型接
着剤を交互に筋塗りし之接着剤層を、導電パターンとこ
れに対する導電体との接続部に介在させる接続がある。For connections using conventional anisotropic conductive films, conductive hot-melt adhesive and insulating hot-melt adhesive are alternately applied on carbon fiber sheets, and the adhesive layer is coated with a conductive pattern. There is a connection intervening at the connection part with the conductor for this.
しかし、筋塗シの幅を狭まくするには限界があシ、狭ピ
ッチの導電パターンに対する接続には適さない。However, there is a limit to narrowing the width of the streaks, and it is not suitable for connection to narrow pitch conductive patterns.
又、接続部においては、その接続が比較的抵抗の高いカ
ーボンによって行なわれているために、この接銃部に電
流を多く流す事はｄ米ない。Furthermore, since the connection is made with carbon having a relatively high resistance, it is not possible to pass a large amount of current through the gun contact area.
さらに、導電パターンおよび導電体との接続が接触のみ
であり、化学変化を供なわないので、接続抵抗のバラツ
キ、信頼性の低下等の問題もある。Furthermore, since the connection between the conductive pattern and the conductor is only through contact and does not cause any chemical change, there are also problems such as variations in connection resistance and reduced reliability.
本発明はこの様な問題点を解決するもので、その目的と
するところは、狭ピッチの接続が可能であシ、接続特性
の向上が可能である異方性導電膜を提供するところにあ
る。The present invention is intended to solve these problems, and its purpose is to provide an anisotropic conductive film that allows narrow pitch connections and improves connection characteristics. .
本発明の異方性導電膜は、絶縁性薄膜に開口した円筒状
直孔の内壁を導電性薄膜で被覆しである事を特数とする
。The anisotropic conductive film of the present invention is characterized in that the inner wall of a cylindrical straight hole opened in an insulating thin film is coated with a conductive thin film.
以下１本発明について、実施列に基づき詳細に説明する
。EMBODIMENT OF THE INVENTION Below, one invention will be described in detail based on the implementation series.
第１図は本発明の第１の実施列を工程順に示す図である
。まず（α）図の如く、絶縁性薄膜ｌの両面に無電界メ
ッキ保護膜２を貼り付けたのちに、レーザビーム等を用
い、円筒状直孔３を開口する。FIG. 1 is a diagram showing a first embodiment of the present invention in order of steps. First, as shown in the figure (α), electroless plating protective films 2 are pasted on both sides of the insulating thin film 1, and then a cylindrical straight hole 3 is opened using a laser beam or the like.
次いで（６）図の如く無電界メッキ槽に浸漬することに
よ）、絶縁性薄膜に開口し九円筒状直孔３の内壁に導電
性薄膜、たとえばニッケル薄膜４ｔ−被覆する９次に無
電界メッキ保ａ摸２をはがすことによシ（ｃ）図の如く
の異方性導電膜が完成する。Next, (6) by immersing the insulating thin film in an electroless plating bath as shown in the figure), a 9-order electroless plating film is applied to the insulating thin film and the inner wall of the nine cylindrical straight hole 3 is coated with a conductive thin film, for example, a nickel thin film 4t. By peeling off the plating film 2, an anisotropic conductive film as shown in Fig. 2(c) is completed.
次に第２図により本発明の第２の実施列ｔ−示す。Next, FIG. 2 shows a second embodiment of the present invention.
まず（ロ））図の如く、絶縁性薄膜１１にレーザービー
ム等を用い、円筒状直孔１２ｔ−開口する。First, (b)) As shown in the figure, a cylindrical straight hole 12t is opened in the insulating thin film 11 using a laser beam or the like.
次いで（６）図の如く無電界メッキ槽に浸漬することに
より、絶縁性薄膜に開口した円筒状直孔１２の内壁に導
電性薄膜、たとえばニッケル薄膜１３ｔ−被覆する１次
に表面く形成された不要のニッケル薄膜の除去、及び所
望の厚みの異方性薄＠１に得る為に、円筒状直孔の内壁
が導電性薄膜で被覆された絶縁性膜を薄く切断すること
により（ｃ）図の如くの異方性導電＠が完成する。Next, (6) as shown in the figure, by immersing it in an electroless plating tank, a conductive thin film, for example, a nickel thin film 13T-coating was formed on the inner wall of the cylindrical straight hole 12 opened in the insulating thin film. In order to remove the unnecessary nickel thin film and obtain the desired thickness of the anisotropic thin film @1, the inner wall of the cylindrical straight hole is thinly cut into an insulating film coated with a conductive thin film. The anisotropic conduction @ is completed.
以上述べた如く、本発明は絶縁性薄膜に開口した円筒状
直孔の内壁をメッキする事によシ、容易にしかも高密度
の異方性導電＠を得ることが可能である。As described above, the present invention makes it possible to easily obtain high-density anisotropic conductivity by plating the inner wall of a cylindrical straight hole opened in an insulating thin film.
又、さらには、互いに電気的に接続する導電パターンと
、これに対応する導電体との間は、金属による接着であ
り、低抵抗接続を確実に行うことができる。特に例えば
、ニッケル薄膜を被覆し友後に、ハンダ等の低融点金Ｎ
ｊ４ｔ−被覆した異方性導電膜を用い九接続で、加熱圧
着を施すことによシ金属の融着くよる接続が可能となり
、さらに確実な接続を行うことができる。Furthermore, the conductive patterns that are electrically connected to each other and the corresponding conductors are bonded by metal, so that a low resistance connection can be reliably achieved. In particular, for example, after coating with a nickel thin film, low melting point metal such as solder may be used.
By using the j4t-coated anisotropic conductive film and applying heat and pressure bonding, it becomes possible to connect by fusion of metals, and a more reliable connection can be achieved.
第” ’ＩＡ （ａ） （６） （ｃ）は、本発明によ
る第１の実施列の工程図である。第２図（α） （６） （ｃ）は、本発明による第２の
実施列の工程図である。図中、１，１】は絶縁性薄膜２ はメッキ保護膜３．１２は円筒状直孔４．１３は導電性薄膜以 上出願人 セイコーエプソン株式会社代理人 弁理士最 と 務他１名第１図Figure 2 (a) (6) (c) is a process diagram of the first implementation train according to the present invention. In the figure, 1, 1] is an insulating thin film 2 is a plated protective film 3. 12 is a cylindrical straight hole 4. 13 is a conductive thin film or more. Applicant: Seiko Epson Corporation Agent Patent attorney Sai, Tsutomu and 1 other person Figure 1
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP20292586AJPS6358708A (en) | 1986-08-29 | 1986-08-29 | Anisotropic conducting film |
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP20292586AJPS6358708A (en) | 1986-08-29 | 1986-08-29 | Anisotropic conducting film |
| Publication Number | Publication Date |
|---|---|
| JPS6358708Atrue JPS6358708A (en) | 1988-03-14 |
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP20292586APendingJPS6358708A (en) | 1986-08-29 | 1986-08-29 | Anisotropic conducting film |
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| JP (1) | JPS6358708A (en) |
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