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JPS63263776A - light emitting diode array head - Google Patents

light emitting diode array head

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Publication number
JPS63263776A
JPS63263776AJP62097273AJP9727387AJPS63263776AJP S63263776 AJPS63263776 AJP S63263776AJP 62097273 AJP62097273 AJP 62097273AJP 9727387 AJP9727387 AJP 9727387AJP S63263776 AJPS63263776 AJP S63263776A
Authority
JP
Japan
Prior art keywords
substrate
array
lla
light emitting
emitting diode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP62097273A
Other languages
Japanese (ja)
Inventor
Norihiro Ashizuka
紀尋 芦塚
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Cable Ltd
Original Assignee
Hitachi Cable Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Cable LtdfiledCriticalHitachi Cable Ltd
Priority to JP62097273ApriorityCriticalpatent/JPS63263776A/en
Publication of JPS63263776ApublicationCriticalpatent/JPS63263776A/en
Pendinglegal-statusCriticalCurrent

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Abstract

PURPOSE:To obtain a device, which is of one-layered wiring structure, small in size through disposing driver ICs together at one side of an LLA by a method wherein a vacant path is provided between the LLA and a substrate in which a submerged film wiring passing through under the LLA is built. CONSTITUTION:A light emitting diode array (LLA) 11 is provided along in a lengthwise direction on a rectangular ceramic substrate 14. The LLA is wire- bonded to each film wiring layer 13, which is provided at both sides of the LLA on the substrate 14, through its upper electrode and a vacant path 25 is provided between the LLA and the substrate 14. A submerged film wiring layer 26, which passes through under the LLA 11 to connect the film wiring 13 formed at the other side of the LLA on the substrate 14, is provided on a part of the substrate 14 which constitutes a part of the vacant path 25. By these processes, though a device of this design is of one-layered wiring structure, the device can be rendered small owing to disposing driver ICs at one side.

Description

Translated fromJapanese

【発明の詳細な説明】[産業上の利用分野]本発明は電子写真式プリンタヘッドに用いられる発光ダ
イオードアレイヘッドに係り、特にセラミック基板上へ
の発光ダイオードアレイ及びドライバICの取付構造を
改良したものに関する。
[Detailed Description of the Invention] [Industrial Application Field] The present invention relates to a light emitting diode array head used in an electrophotographic printer head, and in particular improves the mounting structure of a light emitting diode array and a driver IC on a ceramic substrate. related to things.

[従来の技術]第3図は従来の発光ダイオードアレイヘッド(以下、L
EDヘッドという)の構造を示す。
[Prior art] Figure 3 shows a conventional light emitting diode array head (hereinafter referred to as L).
This figure shows the structure of the ED head.

長尺状のセラミック基板14上の中央長尺方向に、帯状
に形成した電極層16を介して発光ダイオードアレイ(
以下、LLAという)11が実装される。このLLAl
lの両側にはドライバIC12が実装されると共に、こ
のドライバIC12と接続される電気配線としてのF+
’J IFJあるいは厚膜の導体層13が形成される。
A light emitting diode array (
(hereinafter referred to as LLA) 11 is implemented. This LLAl
A driver IC 12 is mounted on both sides of l, and F+ as an electric wiring connected to this driver IC 12.
'J IFJ or thick film conductor layer 13 is formed.

LLAIIをこの導体層13とワイヤ15でボンディン
グして、LLAIIと両側に配置されたドライバIC1
2とを接続する。
The LLA II is bonded to this conductor layer 13 with the wire 15, and the driver IC 1 arranged on both sides of the LLA II is connected to the LLA II.
Connect 2.

ドライバIC12をLLAllの両側に配置7るのは、
2つの理由による。第1に、LLA11の上面に形成さ
れる上部電極が、その構造上1−1−Al1の良さ方向
に沿って千鳥状に配列されているため、ワイヤボンディ
ングを片側のみに偏在させることができず、LLAll
の両側に交互にワイヤボンディングしなければならない
からである。
Placing the driver IC 12 on both sides of LLAll is as follows.
For two reasons. First, because the upper electrode formed on the upper surface of LLA11 is arranged in a staggered manner along the 1-1-Al1 quality direction due to its structure, wire bonding cannot be unevenly distributed only on one side. ,LLAll
This is because wire bonding must be performed alternately on both sides.

両側に交互にワイヤボンディングすることは、LLAl
lの構造上避けられないことである。第2に、1層の膜
導体層のみで配線を行おうとすると、中央に帯状の電極
層16があるので、配線を横切らすことができない。2
層構造として配線を横切らせるようにすれば、ドライバ
IC12をすべてLLAllの片側に持って来ることも
できるが、2層構造とすることは技術的にも、経済的に
も問題があり、採用できない。
Alternate wire bonding on both sides is LLAl
This is unavoidable due to the structure of l. Second, if wiring is attempted using only one film conductor layer, the strip-shaped electrode layer 16 is present in the center, so the wiring cannot cross. 2
If the wiring is laid across as a layered structure, all of the driver ICs 12 can be brought to one side of the LLAll, but a two-layered structure is technically and economically problematic and cannot be adopted. .

このように従来のLEDヘッドでは、1層構造の膜導体
層による電気配線を行うために、ドライバICをLLA
の両側へ実装せざるを得なかった。
In this way, in conventional LED heads, the driver IC is connected to the LLA in order to perform electrical wiring using a single-layer film conductor layer.
I had no choice but to implement it on both sides.

その結果、LEDヘッドの短辺方向の長さを縮めるには
限界があり、LEDヘッドの小型化の要求に応えること
ができなかった。
As a result, there is a limit to reducing the length of the LED head in the short side direction, and it has not been possible to meet the demand for miniaturization of the LED head.

[発明が解決しようとする問題点]上記したように、セラミック基板の中央に形成した帯状
の電極層の上にLLAを実装する1層配線構造の従来の
LEDヘッドでは、この電極層の存在により膜導体層を
交差することができない。
[Problems to be Solved by the Invention] As described above, in a conventional LED head with a single-layer wiring structure in which LLA is mounted on a band-shaped electrode layer formed in the center of a ceramic substrate, due to the presence of this electrode layer, Membrane conductor layers cannot be crossed.

このためドライバICをLLAの両側に配置せざるを得
ず、LEDヘッドの短辺方向の長さが長くなってLED
ヘッドの小型化が妨げられていた。
For this reason, the driver ICs have to be placed on both sides of the LLA, and the length of the LED head in the short side direction becomes longer.
This has hindered head miniaturization.

本発明は上記した従来技術の欠点を解消し、1層配線構
造でありながら、ドライバtCをLLAの片側にまとめ
て配置することができ、もって小型化をはかることがで
きるLEDヘッドを提供することにある。
The present invention solves the above-mentioned drawbacks of the prior art, and provides an LED head in which the driver tC can be collectively arranged on one side of the LLA, even though it has a single-layer wiring structure, thereby achieving miniaturization. It is in.

E問題点を解決するための手段1本発明のL E Dヘッドは、長尺状のセラミック基板
上に長手方向に沿って発光ダイオードアレイを設け、該
アレイはその上部電極からアレイ両側に形成した上記基
板上の各膜配線層にワイヤボンディングされ、上記アレ
イと上記1mとの間に空隙通路を設け、該空隙通路はこ
の一部を構成Jる基板上にアレイの下を横切ってアレイ
の一側に形成した基板上の膜配線層を他側に形成したJ
J根板上膜配線層に接続する潜り膜配線層が形成され、
上記ドライバtCを基板上のアレイの他側に偏在させて
配設し、この他側に偏在させて配設したドライバtCは
上記アレイの他側に形成した基板上の膜配線層に接続さ
れて上記アレイに接続され、上記基板に上下を貫くスル
ーホールを設けると共に、基板の下面に共通配線を形成
し、該共通配線は上記スルーホールを介してアレイの下
部電極に接続されているものである。
Means for Solving Problem E 1 The LED head of the present invention has a light emitting diode array provided along the longitudinal direction on a long ceramic substrate, and the array is formed on both sides of the array from the upper electrode. Each film wiring layer on the substrate is wire-bonded, and a gap passage is provided between the array and the 1m, and the gap passage crosses under the array on the substrate forming a part of the substrate and connects the array. The film wiring layer on the substrate formed on one side is formed on the other side.
A submerged membrane wiring layer connected to the J root plate upper membrane wiring layer is formed,
The driver tC is unevenly distributed on the other side of the array on the substrate, and the driver tC unevenly distributed on the other side is connected to the film wiring layer on the substrate formed on the other side of the array. A through hole connected to the array and penetrating the substrate from above and below is provided, and a common wiring is formed on the lower surface of the substrate, and the common wiring is connected to the lower electrode of the array via the through hole. .

[作 用]それまでLLAの一側にあったドライバICを他側に持
って来て、全ドライバICの片側配置を可能とするため
には、LLAの上部電極からワイヤボンディングしたL
m△の一側の膜配線層を、L LΔと接触することなく
、新たに他側に持って来たドライバICに接続しなけれ
ばならない。
[Function] In order to bring the driver IC that had been on one side of the LLA to the other side and to make it possible to place all the driver ICs on one side, it is necessary to wire-bond the LLA from the upper electrode of the LLA.
The film wiring layer on one side of mΔ must be connected to the driver IC newly brought to the other side without contacting L LΔ.

ところが、本発明ではLLAと基板との間に空隙通路が
設けられて、この通路にLLAの下を潜る潜り膜配線を
形成しているので、一層配線構造でありながらLLAと
接触することなく、LLAの上部71 Kからワイヤボ
ンディングしたLLAの一側の配線層を新たに他側に持
って来たドライバICに接続さしることができる。
However, in the present invention, a gap passage is provided between the LLA and the substrate, and a submerged film wiring that goes under the LLA is formed in this passage, so that although it has a single layer wiring structure, it does not come into contact with the LLA. The wiring layer on one side of the LLA wire-bonded from the upper part 71K of the LLA can be connected to a new driver IC brought to the other side.

また、LLAと基板との間に潜り膜配線層を横切らすた
めの空隙通路を設けたことにより、この空隙通路によっ
てLLAの下部電極と連絡をとっていた基板上の帯状電
極層が分断されて、この帯状電極層を利用した基板上面
からの電源供給ができなくなる。
In addition, by providing a gap passage for crossing the submerged film wiring layer between the LLA and the substrate, the band-shaped electrode layer on the substrate that was in communication with the lower electrode of the LLA is separated by this gap passage. , it becomes impossible to supply power from the top surface of the substrate using this band-shaped electrode layer.

ところが、本発明では基板に上下をLコくスルーホール
が設けられて、このスルーホールを介してLLAの下部
電極と、基板下面の共通配線とを接続しているので、基
板上の帯状電極層が分断されても、基板下面の共通配線
からLLAに7を源を供給することができる。
However, in the present invention, through-holes are provided in the substrate at lengths L on the top and bottom, and the lower electrode of the LLA is connected to the common wiring on the bottom surface of the substrate via these through-holes, so that the strip-shaped electrode layer on the substrate is Even if the LLA is separated, a source of 7 can be supplied to the LLA from the common wiring on the bottom surface of the substrate.

[実施例]本発明の実施例を第1図〜第2図に基づいて説明すれば
以下の通りである。
[Example] An example of the present invention will be described below based on FIGS. 1 and 2.

第1図は本発明のL E Dヘラド例を示し、(a)は
平面図、(b)は正面図、(C)は側面図である。
FIG. 1 shows an example of the LED helad of the present invention, in which (a) is a plan view, (b) is a front view, and (C) is a side view.

長尺状のセラミック基板14上の長手方向に沿う一側に
多数のLLAllが、他側にこれらLLAllを駆動す
るために必要な数のドライバIC12がそれぞれ偏在し
て実装される。これらドライバl012とLLAllと
を接続するための回路配線13がLLAllの長手方向
の一側及び他側にそれぞれ形成される。この回路配線1
3は、例えば薄膜導体層で形成されるが、ここでは1層
配線構造が採られている。また、図面上では、便宜的に
セラミック基板14上のほぼ全面に形成しであるが、実
際にはパターン配線である。
A large number of LLAlls are mounted on one side of the elongated ceramic substrate 14 along the longitudinal direction, and a number of driver ICs 12 required to drive these LLAlls are unevenly distributed on the other side. Circuit wiring 13 for connecting these drivers 1012 and LLAll are formed on one side and the other side in the longitudinal direction of LLAll, respectively. This circuit wiring 1
3 is formed of, for example, a thin film conductor layer, and here a single layer wiring structure is adopted. Further, although in the drawing, it is shown as being formed on almost the entire surface of the ceramic substrate 14 for convenience, it is actually a pattern wiring.

セラミック基板14上に島状に部分電極21を点在させ
、この部分電極21上にLLAllを電気的、かつ機械
的に取り付ける、部分電極21はL L△11を基板1
4から持ち上げてLLAIIと基板14との間にLLA
llのFを横切る回路配線用の空隙通路25を形成する
。そのために部分電極21の厚さはLLAIIとショー
トしないように回路配線の層厚よりも厚く、また部分電
極21.21間の間隔はここに配設される回路配線が加
工精度上、部分電極21とショートしないだけの幅が必
要となる。
Partial electrodes 21 are scattered in island shapes on the ceramic substrate 14, and LLAll is electrically and mechanically attached to the partial electrodes 21.
4 and place the LLA between LLA II and the board 14.
A gap passage 25 for circuit wiring is formed across F of ll. Therefore, the thickness of the partial electrode 21 is thicker than the layer thickness of the circuit wiring so as not to short-circuit with LLAII, and the interval between the partial electrodes 21 and 21 is set so that the circuit wiring arranged here is It needs to be wide enough to avoid short circuits.

なお、部分電極は厚膜に限定されない。例えば、部分グ
レーズドセラミック基板を用いてガラスコーティングで
厚くした部分に薄膜を形成しても、あるいは導電性の板
状体を設けるだけでもよい。
Note that the partial electrode is not limited to a thick film. For example, a partially glazed ceramic substrate may be used, and a thin film may be formed on the thickened portion with glass coating, or a conductive plate may be simply provided.

上記空隙通路25を通ってLLAllの下を横切る潜り
回路配線26は、LLAllの一側に形成した基板14
上の回路配線13を他側に形成した基板14上の回路配
線13に接続する。すなわち、潜り回路配ta26によ
りLLAllの一側にある回路配線13をすべて空隙通
路25に通して、LLA11の他側にドライバIC12
を1べて実装できる配線パターンを形成する。潜り回路
配線26は前述した回路配線13と全く同じで、例えば
薄膜導体層の1層配線構造である。
The submerged circuit wiring 26 passing through the gap passage 25 and crossing under the LLAll is connected to a substrate 14 formed on one side of the LLAll.
The upper circuit wiring 13 is connected to the circuit wiring 13 on the substrate 14 formed on the other side. That is, all the circuit wiring 13 on one side of the LLA1 is passed through the gap passage 25 by the submerged circuit wiring ta26, and the driver IC 12 is placed on the other side of the LLA11.
Form a wiring pattern that can mount all of the following. The submerged circuit wiring 26 is exactly the same as the circuit wiring 13 described above, and has, for example, a one-layer wiring structure of a thin film conductor layer.

部分電極21によって基板14から持ら上ぼられたLL
Allの上部電極より、LL八八個側形成した基板14
上の各回路配線13にワイA715でボンディングして
、LLAllをドライバIC12に接続している。
LL lifted up from the substrate 14 by the partial electrode 21
Substrate 14 formed on the 88 LL side from the upper electrode of All
LLAll is connected to the driver IC 12 by bonding to each circuit wiring 13 above with a wire A715.

一方、島状に部分電極21を点在させたセラミック基板
14のその点在部に、上下を貫くスルーホール23を設
ける。また、基板14の下面に共通配Pi122を形成
する。この共通配線22と部分電極21とをスルーホー
ル23を介して接続することによって、LLAIIの下
部電極を基板14の下面から取り出すようにしである。
On the other hand, through holes 23 passing through the top and bottom are provided in the portions of the ceramic substrate 14 where the partial electrodes 21 are scattered in the form of islands. Further, a common wiring Pi 122 is formed on the lower surface of the substrate 14. By connecting the common wiring 22 and the partial electrode 21 via the through hole 23, the lower electrode of the LLA II is taken out from the lower surface of the substrate 14.

このように上記実施例によれば、膜厚差を利用して一側
にある回路配線を他側に引き出すようにしたので、2層
配線構造を採用しない簡単な構造でありながら、ドライ
バICをすべてセラミック基板の他側に偏在させること
ができる。したがって、LEDヘッドの短辺方向の良さ
を可及的に短くすることができる。また、膜厚差を利用
することにより分断されるLLAの下部電極は、スルー
ホールを介してセラミック基板の下面より取り出させる
ようにしたので、LLAへの電源供給に支障は生じない
。これらによりLED方式のプリンタの小型化を図るこ
とができる。
In this way, according to the above embodiment, the circuit wiring on one side is drawn out to the other side by utilizing the difference in film thickness, so the driver IC can be easily connected to the driver IC even though it has a simple structure that does not employ a two-layer wiring structure. All can be unevenly distributed on the other side of the ceramic substrate. Therefore, the quality of the LED head in the short side direction can be made as short as possible. Further, since the lower electrode of the LLA, which is divided by utilizing the difference in film thickness, is taken out from the lower surface of the ceramic substrate through a through hole, there is no problem in power supply to the LLA. With these features, it is possible to downsize the LED type printer.

第2図は第1図の実施例の変形例を示すもので、(a>
は正面図、(b)は側面図である。第1図と異なる点は
、厚膜の部分電極でLLAを持ち上げる代わりに、基板
14に空隙通路としての溝31を設けた点である。即ち
、LLA直下の基板部にスルーホール23をよけて溝3
1を形成し、この溝31に潜り回路配線27を通して一
側と他側の回路配線13を接続している。この溝31の
形成により、LLAIIの両側は浮いた状態になるが、
LLAllの下部電極が基板14上に形成した島状の電
極層28と7h気的1機械的に接続されているため、L
LAの支持に支障は生じない。必要ならば、潜り回路配
線形成後に、この溝を樹脂等で埋めてもよい。これによ
れば、潜り回路配線とLLAとのショートを防ぐことが
できるという利点がある。
FIG. 2 shows a modification of the embodiment shown in FIG.
is a front view, and (b) is a side view. The difference from FIG. 1 is that instead of lifting the LLA with a thick partial electrode, a groove 31 is provided in the substrate 14 as a gap passage. That is, a groove 3 is formed in the substrate directly below the LLA, avoiding the through hole 23.
1 is formed, and the circuit wiring 27 is inserted into this groove 31 to connect the circuit wiring 13 on one side and the other side. Due to the formation of this groove 31, both sides of LLAII are in a floating state,
Since the lower electrode of LLAAll is connected to the island-shaped electrode layer 28 formed on the substrate 14 for 7 hours,
There will be no hindrance to LA's support. If necessary, this groove may be filled with resin or the like after forming the submerged circuit wiring. According to this, there is an advantage that short circuit between the submerged circuit wiring and the LLA can be prevented.

し発明の効果]以上型するに本発明によれば、−膜配線(1°4造であ
りながら、ドライバrCの片側設置ができるので、小型
化が可能になるという優れた効果を発揮する。
[Effects of the Invention] To summarize, according to the present invention, the driver rC can be installed on one side despite the -membrane wiring (1°4 structure), so it exhibits the excellent effect of being able to be miniaturized.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は本発明に係るLEDヘッドの一実施例を示′を
構成図、第2図は同じく伯の実施例を示ず構成図、第3
図は従来のLEDヘッド例を示す構成図である。図中、11はLLA(発光ダイオードアレイ)、12は
ドライバIC113は回路配線(膜配線層)、14はセ
ラミック基板、15はワイヤ、21は部分電極、22は
共通配線1.23はスルーホール、25は空隙通路、2
6.27は潜り回路配線(潜り膜配線層)である。
1 is a block diagram showing an embodiment of the LED head according to the present invention; FIG. 2 is a block diagram showing an embodiment of the present invention; FIG.
The figure is a configuration diagram showing an example of a conventional LED head. In the figure, 11 is LLA (light emitting diode array), 12 is driver IC 113, circuit wiring (membrane wiring layer), 14 is ceramic substrate, 15 is wire, 21 is partial electrode, 22 is common wiring 1, 23 is through hole, 25 is a gap passage, 2
6.27 is a submerged circuit wiring (submerged film wiring layer).

Claims (6)

Translated fromJapanese
【特許請求の範囲】[Claims](1)長尺状のセラミック基板上に長手方向に沿って発
光ダイオードアレイを設け、該アレイはその上部電極か
らアレイ両側に形成した上記基板上の各膜配線層にワイ
ヤボンディングされ、上記アレイと上記基板との間に空隙通路を設け、該空隙
通路はこの一部を構成する基板上にアレイの下を横切つ
てアレイの一側に形成した基板上の膜配線層を他側に形
成した基板上の脱配線層に接続する潜り膜配線層が形成
され、上記ドライバICを基板上のアレイの他側に偏在させて
配設し、この他側に偏在させて配設したドライバICは
上記アレイの他側に形成した基板上の膜配線層に接続さ
れて上記アレイに接続され、上記基板に上下を貫くスルーホールを設けると共に、基
板の下面に共通配線を形成し、該共通配線は上記スルー
ホールを介してアレイの下部電極に接続されていること
を特徴とする発光ダイオードアレイヘッド。
(1) A light emitting diode array is provided along the longitudinal direction on a long ceramic substrate, and the array is wire-bonded from its upper electrode to each film wiring layer on the substrate formed on both sides of the array. A gap passage is provided between the substrate, and the gap passage crosses under the array on the substrate constituting a part of the substrate, and the membrane wiring layer on the substrate formed on one side of the array is formed on the other side. A hidden film wiring layer connected to the dewiring layer on the substrate is formed, and the driver IC is unevenly distributed on the other side of the array on the substrate, and the driver IC arranged unevenly on the other side is as described above. A through hole is provided in the substrate, which is connected to the membrane wiring layer on the substrate formed on the other side of the array, and passes through the top and bottom of the substrate, and a common wiring is formed on the lower surface of the substrate, and the common wiring is connected to the substrate formed on the other side of the array. A light emitting diode array head, characterized in that it is connected to a lower electrode of the array via a through hole.
(2)上記空隙通路が、セラミック基板上に膜配線層よ
りも厚く形成した部分電極上に発光ダイオードアレイを
設けてできる該アレイと基板間の空隙によつて形成され
ていることを特徴とする特許請求の範囲第1項記載のア
レイヘッド。
(2) The gap passage is formed by a gap between the substrate and the light emitting diode array, which is formed by providing a light emitting diode array on a partial electrode formed thicker than the membrane wiring layer on the ceramic substrate. An array head according to claim 1.
(3)上記部分電極が厚膜導体層で構成されていること
を特徴とする特許請求の範囲第2項記載のアレイヘッド
(3) The array head according to claim 2, wherein the partial electrode is constituted by a thick film conductor layer.
(4)上記部分電極が導電性の板状体で構成されている
ことを特徴とする特許請求の範囲第2項記載のアレイヘ
ッド。
(4) The array head according to claim 2, wherein the partial electrode is composed of a conductive plate-like body.
(5)上記部分電極が、セラミック基板の一部にコーテ
ィングされたガラスと、該ガラス上に形成された薄膜導
体層とから構成されていることを特徴とする特許請求の
範囲第2項記載のアレイヘッド。
(5) The partial electrode is composed of glass coated on a part of a ceramic substrate and a thin film conductor layer formed on the glass. array head.
(6)上記空隙通路が、発光ダイオードアレイ下のセラ
ミック基板の一部に膜配線層厚よりも深く形成した溝に
よつて形成されていることを特徴とする特許請求の範囲
第1項記載のアレイヘッド。
(6) The gap passage is formed by a groove formed in a part of the ceramic substrate below the light emitting diode array to be deeper than the thickness of the film wiring layer. array head.
JP62097273A1987-04-221987-04-22 light emitting diode array headPendingJPS63263776A (en)

Priority Applications (1)

Application NumberPriority DateFiling DateTitle
JP62097273AJPS63263776A (en)1987-04-221987-04-22 light emitting diode array head

Applications Claiming Priority (1)

Application NumberPriority DateFiling DateTitle
JP62097273AJPS63263776A (en)1987-04-221987-04-22 light emitting diode array head

Publications (1)

Publication NumberPublication Date
JPS63263776Atrue JPS63263776A (en)1988-10-31

Family

ID=14187918

Family Applications (1)

Application NumberTitlePriority DateFiling Date
JP62097273APendingJPS63263776A (en)1987-04-221987-04-22 light emitting diode array head

Country Status (1)

CountryLink
JP (1)JPS63263776A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication numberPriority datePublication dateAssigneeTitle
US5789766A (en)*1997-03-201998-08-04Motorola, Inc.Led array with stacked driver circuits and methods of manfacture

Cited By (1)

* Cited by examiner, † Cited by third party
Publication numberPriority datePublication dateAssigneeTitle
US5789766A (en)*1997-03-201998-08-04Motorola, Inc.Led array with stacked driver circuits and methods of manfacture

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