【発明の詳細な説明】〔産業上の利用分野〕本発明は少なくとも二種類の元素から成る組成の異なる
部分構造の組み合わせからなるターゲットを用い、プラ
ズマ分布を変えターゲットのスパックされる領域を移動
させることによって堆積膜の成分組成を厚さ方向に変化
させることができるプラズマ制御マグネトロンスパッタ
リ゛ング装置及び方法に関する。[Detailed Description of the Invention] [Industrial Application Field] The present invention uses a target consisting of a combination of partial structures of at least two types of elements with different compositions, and changes the plasma distribution to move the spattered region of the target. The present invention relates to a plasma-controlled magnetron sputtering apparatus and method that allows the composition of a deposited film to be varied in the thickness direction.
直流または交流マグネトロンスパッタリングにおいて、
ターゲット裏面のマグネトロン磁石に加え、ターゲット
の前部側面にソレノイドコイルを設置し、両磁石の合成
磁界を変えることによりプラズマ分布を変化させるプラ
ズマ制御マグネトロンスパッタリング装置については本
発明者が既に出願を行っている（特願昭６１−１８３３
７５号）。この装置を用いることにより、厚さ方向に組
成分布が変化する堆積膜を基板上に形成することが可能
であり、例えば半導体の配線、電極などの有用な部材を
提供できる。In DC or AC magnetron sputtering,
The inventor has already filed an application for a plasma-controlled magnetron sputtering device in which a solenoid coil is installed on the front side of the target in addition to a magnetron magnet on the back of the target, and the plasma distribution is changed by changing the composite magnetic field of both magnets. (Patent application 1986-1833)
No. 75). By using this apparatus, it is possible to form a deposited film whose composition distribution changes in the thickness direction on a substrate, and it is possible to provide useful members such as semiconductor wiring and electrodes, for example.
二の装置においては前面ソレノイド磁石を真空室の外周
部に設置しておりターゲットと前面ソレノイド磁石との
距離が大きく、従ってプラズマ分布を変化させるために
は前面ソレノイド磁石を強くする必要があり、このため
装置が大きくなったり、大きな電流を必要とするなどの
若干の問題があった。In the second device, the front solenoid magnet is installed on the outer periphery of the vacuum chamber, and the distance between the target and the front solenoid magnet is large. Therefore, in order to change the plasma distribution, the front solenoid magnet must be made stronger. Therefore, there were some problems such as the size of the device and the need for a large amount of current.
本発明者はさらに使用特性、実用性に優れたプラズマ制
御マグネトロンスパッタリング装置及びその方法を開発
すべく鋭意検討の結果、本発明に到達した。The inventor of the present invention has arrived at the present invention as a result of intensive studies to develop a plasma-controlled magnetron sputtering apparatus and method that have excellent usability and practicality.
本発明は、（１）直流または交流マグネトロンスパッタ
リング装置において、ターゲット裏面及び基板裏面にそ
れぞれ磁極を設け、これら磁極の少なくとも一つの磁界
強度または極性を変化させることのできる磁界調節装置
を備えることを特徴とするプラズマ制御マグネトロンス
パッタリング装置、及び（２）直流または交流マグネト
ロンスパッタリング法において、ターゲット裏面及び基
板裏面にそれぞれ磁極を設け、これら磁極の少なくとも
一つの磁界強度または極性を変更し、ターゲットに接す
るプラズマの分布を調節することにより１スパツタリン
グを行うことを特徴とするプラズマ制御マグネトロンス
パッタリング法に関する。The present invention is characterized in that (1) a DC or AC magnetron sputtering apparatus is provided with magnetic poles on the back surface of the target and on the back surface of the substrate, and is equipped with a magnetic field adjustment device capable of changing the magnetic field strength or polarity of at least one of these magnetic poles. (2) In a DC or AC magnetron sputtering method, magnetic poles are provided on the back surface of the target and on the back surface of the substrate, and the magnetic field strength or polarity of at least one of these magnetic poles is changed to control the plasma in contact with the target. The present invention relates to a plasma-controlled magnetron sputtering method characterized in that one sputtering is performed by adjusting the distribution.
また設置位置微動調節装置により誘導部材の一部を可動
とする事によりターゲットまたは基板の位置を微調整し
、最適の位置関係を得るようにすることができる。Further, by making a part of the guide member movable using the installation position fine adjustment device, the position of the target or the substrate can be finely adjusted to obtain an optimal positional relationship.
以下、本発明を図面に示す実施例に基づいて詳細に説明
する。Hereinafter, the present invention will be described in detail based on embodiments shown in the drawings.
第１図は本発明の装置の一実施例を示す縦断面図である
。FIG. 1 is a longitudinal sectional view showing an embodiment of the apparatus of the present invention.
ターゲット７の裏面にターゲット裏面磁極１が設けられ
、基板８の裏面に基板裏面磁極９として永久磁石４が設
けられている。ターゲット裏面磁極１としてはソレノイ
ドコイル２または永久磁石の何れであってもよい。永久
磁石４は、上下方向に可動であり真空室の外部に一端が
突き出た誘導部材５に取りつけられている。誘導部材５
は図示しない設置位置微動調節装置によって上下方向に
移動させることができる。誘導部材の材質は磁力線によ
り帯ｉｆｆできるものである限り特に制限はなく、例え
ばステンレスで表面被覆された珪素鉄であることができ
る。誘導部材を設けたことにより真空室の小型化、装置
の簡素化が可能である。A target back magnetic pole 1 is provided on the back surface of the target 7, and a permanent magnet 4 is provided as a substrate back magnetic pole 9 on the back surface of the substrate 8. The target backside magnetic pole 1 may be either a solenoid coil 2 or a permanent magnet. The permanent magnet 4 is attached to a guide member 5 that is movable in the vertical direction and has one end protruding outside the vacuum chamber. Guiding member 5
can be moved in the vertical direction by an installation position fine adjustment device (not shown). The material of the guiding member is not particularly limited as long as it can be bound by magnetic lines of force, and may be, for example, silicon iron whose surface is coated with stainless steel. By providing the guiding member, it is possible to downsize the vacuum chamber and simplify the device.
真空室の外部にソレノイドコイル６が設置されており、
その磁界の強さまたは極性は、ソレノイドコイル６に接
続された磁界調整装置１１により “任意に変化
させることができる。磁界調整装置１１の具体例として
はトランスフォーマ−１極性切換えスイ・ツチまたはパ
ルス発生器を挙げることができる。A solenoid coil 6 is installed outside the vacuum chamber,
The strength or polarity of the magnetic field can be changed arbitrarily by a magnetic field adjustment device 11 connected to the solenoid coil 6. Specific examples of the magnetic field adjustment device 11 include a transformer 1 polarity switching switch or a pulse generator. Can list utensils.
真空室外部のソレノイドコイル６の磁界の方向は中央部
のターゲット裏面磁極１とは逆の方向に設定されている
。The direction of the magnetic field of the solenoid coil 6 outside the vacuum chamber is set in the opposite direction to that of the target back magnetic pole 1 located at the center.
ターゲットの外側前方に補助磁極３が設けられており、
補助磁極３によりターゲット７近傍の磁界が吸引される
。各磁極の合成磁界は第１図において矢印を有する線で
示したような分布を示す。An auxiliary magnetic pole 3 is provided outside and in front of the target.
The magnetic field near the target 7 is attracted by the auxiliary magnetic pole 3 . The combined magnetic field of each magnetic pole exhibits a distribution as shown by the line with arrows in FIG.
基板裏面磁極９の磁界とはこの例の場合基板裏面の永久
磁石４の磁界と誘導部材５により真空室内に誘導された
真空室外部のソレノイドコイル６の磁界との合成磁界を
指すものとする。In this example, the magnetic field of the magnetic pole 9 on the back surface of the substrate refers to a composite magnetic field of the magnetic field of the permanent magnet 4 on the back surface of the substrate and the magnetic field of the solenoid coil 6 outside the vacuum chamber induced into the vacuum chamber by the induction member 5.
第２図に、本発明のもう一つの例を示す。第２図（ａ）
のような並行板状に配置されたターゲットを用い、第２
図（ｂ）のような複数のソレノイドコイルをターゲット
裏面に配置した装置において、ソレノイドコイル１０ａ
とソレノイドコイル１０ｂとは独立に磁界の強さ、極性
を変える事ができる。第２図（ｂ）にはソレノイドコイ
ルｌＯａの極性を基板磁極９とは逆方向、ソレノイドコ
イル１０ｂの極性を基板磁極と同じにした場合の磁界分
布を例示している。FIG. 2 shows another example of the invention. Figure 2(a)
Using targets arranged in parallel plates like
In a device in which a plurality of solenoid coils are arranged on the back surface of the target as shown in Figure (b), the solenoid coil 10a
The strength and polarity of the magnetic field can be changed independently of the solenoid coil 10b. FIG. 2(b) shows an example of the magnetic field distribution when the polarity of the solenoid coil lOa is opposite to that of the substrate magnetic pole 9, and the polarity of the solenoid coil 10b is made the same as that of the substrate magnetic pole.
ターゲッＩ−Ａ近傍の合成磁界はターゲットに対し並行
、ターゲラ）Ｂ近傍の合成磁界はターゲットに対し垂直
の成分が主となり、ターゲラ）Ａがスパッタされるのに
対し、ターゲットＢはスパックされない。従って堆積膜
には主としてＡ成分が含まれることになる。The composite magnetic field near the target I-A is parallel to the target, and the composite magnetic field near the target I-A has a component perpendicular to the target.The target I-A is sputtered, but the target B is not sputtered. Therefore, the deposited film mainly contains the A component.
ある時点でソレノイドコイル１０ａ、１０ｂの極性を逆
転させると磁界分布は反転し、ターゲットＢが主として
スパックされて、堆積膜の主成分をＢ成分に切り換える
ことができる。If the polarities of the solenoid coils 10a and 10b are reversed at a certain point, the magnetic field distribution is reversed, and the target B is mainly spun, so that the main component of the deposited film can be switched to the B component.
ソレノイドコイル１０ａ、１０ｂの極性を同方向にすれ
ば両成分を同時スパッタも可能である。If the polarities of the solenoid coils 10a and 10b are set in the same direction, both components can be sputtered simultaneously.
この場合、ソレノイドコイル１０ａ、・１０ｂの磁界の
強さを変えることにより堆積膜中のＡ成分、Ｂ成分の比
率を任意に変えることができる。In this case, the ratio of the A component and the B component in the deposited film can be arbitrarily changed by changing the strength of the magnetic field of the solenoid coils 10a, 10b.
第１図の装置において、第７図に示す形状のターゲット
７を用い、ターゲットＸ面磁極ｌの強さを変えた場合の
磁力線の方向とスパックされる位置を示す部分図を第３
図に示す。In the apparatus shown in FIG. 1, the target 7 having the shape shown in FIG. 7 is used, and FIG.
As shown in the figure.
第３図（ａ）、（ｂ）に磁界の強さを変化させた場合の
スパッタされる位置の変化の様子を示す。FIGS. 3(a) and 3(b) show how the sputtered position changes when the strength of the magnetic field is changed.
基板裏面磁極９の磁界を強めターゲット裏面磁極ｌを弱
めると第３図（ａ）のように合成磁界は変化し、外周辺
の部分がスパッタされる。また基板裏面磁極９の磁界を
弱めターゲット裏面磁極ｌの磁界を強めると第３図（ｂ
）のように合成磁界は変化し、ターゲットの中央部分が
スパッタされる。When the magnetic field of the substrate backside magnetic pole 9 is strengthened and the target backside magnetic pole l is weakened, the composite magnetic field changes as shown in FIG. 3(a), and the outer peripheral portion is sputtered. Furthermore, if the magnetic field of the substrate backside magnetic pole 9 is weakened and the magnetic field of the target backside magnetic pole l is strengthened, the magnetic field shown in FIG.
), the composite magnetic field changes, and the central part of the target is sputtered.
また誘導部材５を上下方向に移動し基板８とターゲット
７との距離を変えても類似の効果が得られる。基板８の
磁界の強さを変える代わりにターゲット裏面磁極１の磁
界の強さまたはターゲット裏面磁極１とターゲット７と
の距離を変えても同様の効果が得られる。Similar effects can also be obtained by moving the guide member 5 up and down to change the distance between the substrate 8 and the target 7. A similar effect can be obtained by changing the strength of the magnetic field of the target back magnetic pole 1 or the distance between the target back magnetic pole 1 and the target 7 instead of changing the strength of the magnetic field of the substrate 8.
さらにソレノイドコイル６及び／または２に流す電流を
パルス発生器１０により変調し、磁界の強さをパルス状
とする事により印加磁界の強さを時間的にパルス変化さ
せる事も可能である。Furthermore, by modulating the current flowing through the solenoid coils 6 and/or 2 with the pulse generator 10 and making the strength of the magnetic field pulse-like, it is also possible to temporally change the strength of the applied magnetic field in pulses.
本発明の厚さ方向に組成が変化する堆積膜を形成する方
法につき、第１図の装置を例として説明する。The method of forming a deposited film whose composition changes in the thickness direction according to the present invention will be explained using the apparatus shown in FIG. 1 as an example.
第４図（ｇ）にターゲット配置の一例を示す。FIG. 4(g) shows an example of target arrangement.
同心円状にＡ、Ｂの二種のターゲットが配置されている
。Two types of targets, A and B, are arranged concentrically.
一例として第１図の装置において、ターゲット裏面磁石
１の磁界の強さを一定とし、ソレノイドコイル６の電源
回路にパルス発生器１０を設け、ソレノイドコイル６に
かける電圧を変えて基板磁界の強さを第４図（Ｃ）のよ
うに変えた場合、ターゲット上のプラズマの位置は第４
図（ａ）、（ｂ）の様に制御される。As an example, in the apparatus shown in FIG. 1, the strength of the magnetic field of the target back magnet 1 is kept constant, a pulse generator 10 is provided in the power supply circuit of the solenoid coil 6, and the voltage applied to the solenoid coil 6 is varied to adjust the strength of the substrate magnetic field. When the position of the plasma on the target is changed as shown in Fig. 4 (C), the position of the plasma on the target becomes the fourth position.
It is controlled as shown in Figures (a) and (b).
材料Ａを飛ばすには基板磁界の強さＢｓをプラズマ密度
の高い点が材料Ａ上に来る値（Ｂｏ）に設定する。Ｂｓ
をそれより弱いＢ１にすると第４図（ｂ）に示すように
プラズマはターゲットの外周辺まで移動し材料Ｂと材料
Ａが同時にスパッタされる。材料Ａが材料已に混入する
割合はターゲットの配置とＢ１．の値による。In order to blow material A, the strength Bs of the substrate magnetic field is set to a value (Bo) at which a point with high plasma density is located above material A. Bs
When B1 is made weaker than B1, the plasma moves to the outer periphery of the target and material B and material A are sputtered simultaneously, as shown in FIG. 4(b). The proportion of material A mixed into the material layer depends on the placement of the target and B1. Depending on the value of
従って、二層膜を堆積するには例えばまずＢｓ” Ｂ
ｏで所望の膜厚までＡを堆積し、次いでＢｓ” Ｂ Ｉ
でＡ、Ｂの混合膜をその上に堆積すればよい〔第４図（
ｄ））、第４図（Ｃ）のデユーティ比および繰り返し周
波数を調節することによりＡ。Therefore, to deposit a bilayer film, for example, first Bs” B
Deposit A to the desired thickness at
Then, a mixed film of A and B can be deposited thereon [Fig. 4 (
d)), A by adjusting the duty ratio and repetition frequency of FIG. 4(C).
Ｂの混合比及び膜厚を望む値に調節できる。例えば、堆
積膜の表面に向けて、膜Ａの厚みを順次減少させ、Ａと
Ｂの混合膜の厚みを順次増大させることもできる〔第４
図（ｆ）〕。またＡとＢの混金膜中のＢの混合割合を次
第うこ増大させることもできる。またプラズマ位置の切
換えを第４図（Ｃ）のように三位置間で不連続に切り換
えるのではなく、連続的に変化させることにより各堆積
膜間の界面層の組成を連続的に変化することもできる。The mixing ratio of B and the film thickness can be adjusted to desired values. For example, the thickness of the film A may be sequentially decreased and the thickness of the mixed film of A and B may be sequentially increased toward the surface of the deposited film.
Figure (f)]. It is also possible to gradually increase the mixing ratio of B in the mixed metal film of A and B. Furthermore, the composition of the interface layer between each deposited film can be continuously changed by changing the plasma position continuously instead of discontinuously switching between three positions as shown in Figure 4 (C). You can also do it.
さら磁界の強さＢｓを適当に設定すればＡ、Ｂを各単独
に堆積することも可能である〔第４図（ｅ）〕。同様に
Ａ、Ｂ、Ｂ’等の種々の組み合わせの多層膜や連続的に
組成の変化する膜を形成することができる。Further, by appropriately setting the strength Bs of the magnetic field, it is also possible to deposit A and B individually [FIG. 4(e)]. Similarly, it is possible to form multilayer films of various combinations of A, B, B', etc. or films whose compositions change continuously.
以下、製造例により本発明を更に具体的に説明する。Hereinafter, the present invention will be explained in more detail with reference to production examples.
製造例１同心円状に配置されたＡおよびＢターゲット（Ａ：シリ
コン、Ｂ：チタン、タングステン、モリブデンなどの高
融点金属）を用い、基Ｖｉ、磁界の強さを調節してスパ
ック初期にはプラズマがＡターゲットのみに接触し、ス
パッタ後期にはプラズマがＡ、８両ターゲットに接触す
るように運転する。生成した膜の断面は下層がポリシリ
コン、上層がチタンとシリコンの合金などの高融点金属
合金からなる二層膜となった（第５図）。Production Example 1 Using A and B targets (A: silicon, B: high melting point metal such as titanium, tungsten, molybdenum, etc.) arranged concentrically, the plasma is generated at the initial stage of sppacking by adjusting the strength of the Vi group and the magnetic field. The plasma is operated so that it contacts only the A target, and in the latter stage of sputtering, the plasma contacts both the A and 8 targets. The cross-section of the resulting film was a two-layer film consisting of a lower layer made of polysilicon and an upper layer made of a high melting point metal alloy such as an alloy of titanium and silicon (Figure 5).
製造例２同心円状に配置されたＡおよびＢターゲット（Ａ：シリ
コン、Ｂ：モリブデン、タングステン、チタンなどの高
融点金属）を用い基板磁界の強さを調節して、スパック
初期にはシリコンのみにプラズマが接触、中期には基板
磁界の強さを徐々に弱めて行きスパッタ後期には両ター
ゲットにプラズマが接触するように運転した。Manufacturing example 2 The strength of the substrate magnetic field is adjusted using A and B targets (A: silicon, B: high melting point metal such as molybdenum, tungsten, titanium, etc.) arranged concentrically, and only silicon is used at the initial stage of spacing. The plasma was brought into contact, and during the middle stage, the strength of the substrate magnetic field was gradually weakened, and in the latter stage of sputtering, the plasma was brought into contact with both targets.
得られた膜の断面は下層がポリシリコン、中層は連続的
に組成が変化して上層の高融点金属シリコン合金につな
がる三層構造となった（第６図）。The cross-section of the resulting film had a three-layer structure, with the lower layer being polysilicon and the middle layer having a composition that continuously changed to connect to the upper layer of high melting point metal silicon alloy (Figure 6).
製造例３ターゲットとして第７図に示したような角型形状のもの
を用い並行板状に配置されたＡおよびＢターゲットをも
つ角型スパッタ装置を用い（Ａ：モリブデン、Ｂ：シリ
コン）、基Ｖｉ磁界の強さを調節してスパッタ初期には
プラズマが両ターゲットに接触し、のち次第に圧縮され
てＡターゲットのみに接触するように運転した。Production Example 3 Using a square sputtering device with A and B targets arranged in parallel plates, using a square target as shown in Figure 7 (A: molybdenum, B: silicon), base material was The strength of the Vi magnetic field was adjusted so that the plasma came into contact with both targets at the beginning of sputtering, and was gradually compressed afterwards so that it came into contact with only the A target.
下層で謹やかに組成が変化する金属膜が得られ、はがれ
などのトラブルが改善された（第８図）。A metal film whose composition changed gracefully in the lower layer was obtained, and problems such as peeling were improved (Figure 8).
製造例４第１図の装置を用い、酸化イツトリウム／酸化イツトリ
ウムバリウム銅二成分ターゲシト上でプラズマを振動さ
せて酸化イツトリウム基板上に超格子膜を形成した。プ
ラズマの振動周期を次第にずらすことにより基板に近い
層では酸化イツトリウム層を厚く、酸化イットリウにバ
リウム銅層を薄＜シ、堆積膜が基板から遠ざかるにつれ
次第に酸化イツトリウム層を薄く、酸化イツトリウムバ
リウム銅層を厚くした。１０００℃のアニールでもクラ
ックのない良好な多層膜が得られた。Production Example 4 Using the apparatus shown in FIG. 1, a superlattice film was formed on a yttrium oxide substrate by oscillating plasma on a binary yttrium oxide/yttrium oxide barium copper target. By gradually shifting the oscillation period of the plasma, the yttrium oxide layer is made thicker in the layer close to the substrate, and the barium copper layer is made thinner on the yttrium oxide. Made the layer thicker. A good multilayer film without cracks was obtained even after annealing at 1000°C.
本発明によれば、プラズマを制御することにより、成分
の異なるターゲットへのスパッタ比をコントロールして
スパッタ堆積膜の組成を容易にコントロールする方法及
びその装置を提供することができる。According to the present invention, it is possible to provide a method and an apparatus for easily controlling the composition of a sputter deposited film by controlling the sputtering ratio to targets having different components by controlling plasma.
第１図は本発明にかかるプラズマ制御マグネトロンスパ
ッタリング装置の構造を表す継断面略図であり、第２図
（ａ）はターゲットの一例を示す図であり、第２図（ｂ
）、第３図（ａ）及び第３図（ｂ）は磁極の極性または
磁界の強さを変えた場合の磁力線の方向とスパッタされ
る位置を示す部分図であり、第４〜第８図はそれぞれ本
発明の実施態様を示す図である。１・・・ターゲット裏面磁極、２．６．１０ａ、１０ｂ
・・・ソレノイドコイル、３・・・補助＆２ｍ、４・・
・永久磁石、５・・・誘導部材、７・・・ターゲット、
８・・・基板、９・・・基板裏面磁極、１１・・・磁界
調整装置（トランスフォーマ−１極性切換えスイッチ、
パルス発生器）。特許出願人 宇部興産株式会社第１図第２図＜ａ）第３図（ａ）第３図（ｂ）８４図第４図（ｄ） （ｅ） （ｆ）第
５ 図（ａ）（ｂン（Ｃン第６図（ａ）（ｂ）（Ｃ）第８図（ａ）（ｂ）→時間（ＣンFIG. 1 is a schematic joint cross-sectional view showing the structure of a plasma-controlled magnetron sputtering apparatus according to the present invention, FIG. 2(a) is a diagram showing an example of a target, and FIG.
), Figures 3(a) and 3(b) are partial views showing the direction of the magnetic lines of force and the sputtered position when the polarity of the magnetic pole or the strength of the magnetic field is changed, and Figures 4 to 8 1A and 1B are diagrams each showing an embodiment of the present invention. 1...Target backside magnetic pole, 2.6.10a, 10b
... Solenoid coil, 3... Auxiliary & 2m, 4...
・Permanent magnet, 5... Induction member, 7... Target,
8... Board, 9... Back side magnetic pole of board, 11... Magnetic field adjustment device (transformer 1 polarity changeover switch,
pulse generator). Patent applicant: Ube Industries, Ltd. Figure 1 Figure 2 <a) Figure 3 (a) Figure 3 (b) Figure 84 Figure 4 (d) (e) (f)
5 Figure (a) (b) (C) Figure 6 (a) (b) (C) Figure 8 (a) (b) → Time (C)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9317587AJPS63262462A (en) | 1987-04-17 | 1987-04-17 | Plasma controlled magnetron sputtering apparatus and method |
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9317587AJPS63262462A (en) | 1987-04-17 | 1987-04-17 | Plasma controlled magnetron sputtering apparatus and method |
| Publication Number | Publication Date |
|---|---|
| JPS63262462Atrue JPS63262462A (en) | 1988-10-28 |
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP9317587APendingJPS63262462A (en) | 1987-04-17 | 1987-04-17 | Plasma controlled magnetron sputtering apparatus and method |
| Country | Link |
|---|---|
| JP (1) | JPS63262462A (en) |
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|---|---|---|---|---|
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|---|---|---|---|---|
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