【発明の詳細な説明】［産業上の利用分野］本発明は、電気的接続部材及びそれを用いた電気回路部
材に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to an electrical connection member and an electrical circuit member using the same.
［従来技術］従来、電気回路部品同士を電気的に接続して構成される
電気回路部材に関する技術としては以下に述べる技術が
知られている。[Prior Art] Conventionally, the following techniques are known as techniques related to electric circuit members configured by electrically connecting electric circuit components.
■ワイヤポンディング方法、第１３図及び第１４図はワイヤポンディング方法によっ
て接続され、封止された半導体装置の代表例を示してお
り、以下、第１３図及び第１４図に基づきワイヤポンデ
ィング方法を説明する。■Wire bonding method Figures 13 and 14 show typical examples of semiconductor devices connected and sealed by the wire bonding method. Explain how.
この方法は、Ａｇペースト３等を用いて半導体素子４を
素子搭載部２に固定支持し１次いで、半導体素子４の接
続部５と、リードフレーム１の所望の接続部６とを金等
の極細金属！９７を用いて電気的に接続する方法である
。In this method, the semiconductor element 4 is fixedly supported on the element mounting part 2 using Ag paste 3 or the like, and then the connection part 5 of the semiconductor element 4 and the desired connection part 6 of the lead frame 1 are connected with ultrafine material such as gold. metal! This is a method of electrically connecting using 97.
なお、接続後は、トランスファーモールド法等の方法で
樹＃ｉ８を用いて半導体素子４とリードフレーム１を對
止し、その後、樹脂封止部分から外に伸びたリードフレ
ーム１の不要部分を切断し、所望の形に曲げ半導体装置
９を作る。After connection, the semiconductor element 4 and the lead frame 1 are separated using a tree #i8 using a method such as transfer molding, and then the unnecessary part of the lead frame 1 extending outside from the resin-sealed part is cut off. The semiconductor device 9 is then bent into a desired shape.
■Ｔ Ａ Ｂ （Ｔａｐｅ Ａｕｔｏｍａｔｅｄ Ｂｏ
ｎｄｉｎｇ）法（例えば、特開昭５９−１３９６３６号
公報）第１５図はＴＡＢ法により接続され封止された半
導体装置の代表例を示す。■T A B (Tape Automated Bo
FIG. 15 shows a typical example of a semiconductor device connected and sealed by the TAB method.
この方法は、テープキャリア方式による自動ポンディン
グ方法である。すなわち、第１５図に基づいて説明する
と、キャリアフィルム基板１６と半導体素子４とを位置
決めした後、キャリアフィルム基板１６のインナーリー
ド部１７と半導体素子４の接続部５とを熱圧着すること
により接続する方法である。接続後は、樹脂２０乃至樹
脂２１で封止し半導体装置９とする。This method is an automatic bonding method using a tape carrier method. That is, to explain based on FIG. 15, after positioning the carrier film substrate 16 and the semiconductor element 4, the inner lead part 17 of the carrier film substrate 16 and the connecting part 5 of the semiconductor element 4 are connected by thermocompression bonding. This is the way to do it. After the connection, the semiconductor device 9 is sealed with resins 20 and 21.
■ＣＣＢ （Ｃｏｎｔｒｏｌｌｅｄ Ｃｏ１１ａｐｓｅ
Ｂｏｎｄｉｎｇ ）法（例えば、特公昭４２−２０９
６号、特開昭６０−５７９４４号公報）第１６図はＣＣＢ法によって接続され封止された半導体
装置の代表例を示す。この方法を第１６図に基づき説明
する。なお、本方法はフリップチップポンディング法と
も言われている。■CCB (Controlled Co11apse
Bonding) law (for example, Special Publication Act 1977
(No. 6, Japanese Unexamined Patent Publication No. 60-57944) FIG. 16 shows a typical example of a semiconductor device connected and sealed by the CCB method. This method will be explained based on FIG. 16. Note that this method is also called a flip chip bonding method.
半導体素子４の接続部５に予め半田バンブ３１を設け、
半田バンプ３１が設けられた半導体素子４を、回路基板
３２上に位置決めして搭載する。A solder bump 31 is provided in advance on the connection portion 5 of the semiconductor element 4,
A semiconductor element 4 provided with solder bumps 31 is positioned and mounted on a circuit board 32.
その後、半田を加熱溶解することにより回路基板３２と
に半導体素子４とを接続させ、フラックス洗浄後封止し
て半導体装置９を作る。Thereafter, the semiconductor element 4 is connected to the circuit board 32 by heating and melting the solder, and the semiconductor device 9 is manufactured by sealing after washing with flux.
■第１７及び第１８図に示す方法すなわち、第１の半導体素子４の接続部５以外の部分に
ポリイミド等よりなる絶縁膜７１を形成せしめ、接続部
５にはＡｕ等よりなる金属材７０を設け、次いで、金属
材７０及び絶縁膜７１の露出面７３．７２を平らにする
。一方、第２の半導体素子４′の接続部５′以外の部分
にポリイミド等よりなる絶縁膜７１”を形成せしめ、接
続部５”にはＡｕ等よりなる金属材７０′を設け、次い
で、金属材７０′及び絶縁膜７１゛の露出面７３’、７
２’を平らにする。■The method shown in FIGS. 17 and 18, that is, an insulating film 71 made of polyimide or the like is formed on a portion of the first semiconductor element 4 other than the connection portion 5, and a metal material 70 made of Au or the like is formed on the connection portion 5. Then, the exposed surfaces 73 and 72 of the metal material 70 and the insulating film 71 are flattened. On the other hand, an insulating film 71'' made of polyimide or the like is formed on a portion of the second semiconductor element 4' other than the connection part 5', a metal material 70' made of Au or the like is provided on the connection part 5'', and then a metal material 70' made of Au or the like is provided on the connection part 5''. Exposed surfaces 73', 7 of the material 70' and the insulating film 71'
Flatten 2'.
しかる後、第１８図に示すように第１の半導体素子４と
第２の半導体素子４°とを位置決めし、位置決め後、熱
圧着することにより？ｔＳｌの半導体素子４の接続部５
と第２の半導体素子４゛の接続部５゛を金属材７０ 、
７０ ’を介して接続する。Thereafter, as shown in FIG. 18, the first semiconductor element 4 and the second semiconductor element 4 degrees are positioned, and after positioning, they are bonded by thermocompression. Connecting portion 5 of semiconductor element 4 of tSl
and the connecting portion 5' of the second semiconductor element 4' with a metal material 70,
Connect via 70'.
■第１９図に示す方法すなわち、第１の回路基材７５と第２の回路基材７５°
の間に、絶縁物質７７中に導電粒子７９を分散させた異
方性導電膜７８を介在させ、第１の回路基材７５と第２
の回路基材７５′を位置決めしたのち、加圧もしくは、
加圧・加熱し、第１の回路基材７５の接続部７６と第２
の回路基材７５“の接続部７６′を接続する方法である
。■The method shown in FIG. 19, that is, the first circuit substrate 75 and the second circuit substrate 75°
An anisotropic conductive film 78 in which conductive particles 79 are dispersed in an insulating material 77 is interposed between the first circuit base material 75 and the second circuit base material 75.
After positioning the circuit board 75', pressurize or
By applying pressure and heating, the connection portion 76 of the first circuit substrate 75 and the second
This is a method of connecting the connecting portion 76' of the circuit board 75''.
■第２０図に示す方法すなわち、第１の回路基材７５と第２の回路基材７５゛
の間に、絶縁物質８１中に一定方向にＦｅ 、Ｃｕ等の
金属線８２を配したエラスチックコネクター８３を介在
させ、第１の回路基材７５と第２の回路基材７５°を位
置決めしたのち、加圧し、第１の回路基材７５の接続部
７６と第２の回路基材７５゛の接続部７６′を接続する
方法である。■The method shown in FIG. 20, that is, an elastic connector in which a metal wire 82 of Fe, Cu, etc. is arranged in a fixed direction in an insulating material 81 between a first circuit substrate 75 and a second circuit substrate 75. After positioning the first circuit base material 75 and the second circuit base material 75 degrees with the intervening circuit board 83, pressure is applied to connect the connecting portion 76 of the first circuit base material 75 and the second circuit base material 75 degrees. This is a method of connecting the connecting portion 76'.
［発明が解決しようとする問題点１ところで上記した従来のポンディング法には次のような
問題点がある。[Problem 1 to be Solved by the Invention The conventional bonding method described above has the following problems.
■ワイヤポンディング法■半導体素子４の接続部５を半導体素子４の内部にくる
ように設計すると、極細金属線７は、その線径が極めて
小さいために、半導体素子４の外周縁部１０あるいはリ
ードフレーム１の素子搭載部２の外周縁部１１に接触し
易くなる。極細金属線７がこれら外周縁部１０乃至１１
に接触すると短絡する。さらに、極細金属線７の長さを
長くせざるを得す、その長さを長くすると、トランスフ
ァーモールド成形時に極細金属線７が変形しやすくなる
。■ Wire bonding method ■ If the connection part 5 of the semiconductor element 4 is designed to be inside the semiconductor element 4, the ultrafine metal wire 7 has an extremely small wire diameter, It becomes easier to contact the outer peripheral edge 11 of the element mounting portion 2 of the lead frame 1. The ultra-fine metal wire 7 is attached to these outer peripheral edges 10 to 11.
It will short circuit if it comes into contact with. Furthermore, the length of the ultra-fine metal wire 7 has to be increased, and when the length is increased, the ultra-fine metal wire 7 becomes easily deformed during transfer molding.
従って、半導体素子４の接続部５は半導体素子４上の周
辺に配置する必要が生じ、回路設計上の制限を受けざる
を得なくなる。Therefore, the connecting portion 5 of the semiconductor element 4 needs to be placed around the semiconductor element 4, and is inevitably subject to circuit design limitations.
■ワイヤポンディング法においては、隣接する極細金Ｐ
ｆ：、線７同士の接触等を避けるためには半導体素子４
上の接続部５のピッチ寸法（隣接する接続部の中心間の
距１ｉ１ｔ）としである程度の間隔をとらざるを得ない
。従って、半導体素子４の大きさが決まれば必然的に接
続部５の最大数が決まる。■In the wire bonding method, adjacent ultrafine gold P
f:, In order to avoid contact between wires 7, semiconductor element 4
As the pitch dimension of the upper connecting portions 5 (distance 1i1t between the centers of adjacent connecting portions), a certain distance must be maintained. Therefore, once the size of the semiconductor element 4 is determined, the maximum number of connection portions 5 is necessarily determined.
しかるに、ワイヤポンディング法では、このピッチ寸法
が通常０．２ｍｍ程度と大きいので、接続部５の数は少
なくせざるを得なくなる。However, in the wire bonding method, the pitch dimension is usually as large as about 0.2 mm, so the number of connecting portions 5 must be reduced.
■半導体素子４上の接続部５から測った極細金属線７の
高さｈは通常０．２〜０．４ｍｍであるが、０．２ｍｍ
以下にし薄型化することは比較的困難であるので薄型化
を図れない。■The height h of the ultrafine metal wire 7 measured from the connection part 5 on the semiconductor element 4 is usually 0.2 to 0.4 mm, but it is 0.2 mm.
Since it is relatively difficult to make the device thinner than below, the device cannot be made thinner.
■ワイヤボンディング作業に時間がかかる。特に接続点
数が多くなるとポンディング時間が長くなり生産効率が
悪くなる。■Wire bonding takes time. In particular, when the number of connection points increases, the bonding time increases and production efficiency deteriorates.
■何らかの要因でトランスファーモールド条件範囲を越
すと、極細金属線７が変形したり最悪の場合には切断し
たりする。- If the transfer molding condition range is exceeded for some reason, the ultrafine metal wire 7 may be deformed or, in the worst case, may be cut.
また半導体素子４上の接続部５においては、極細金属線
７と合金化されないＡｕが露出しているためＡ、Ｉ２腐
食が生じ易くなり、信碩性の低下が生じる。Furthermore, in the connection portion 5 on the semiconductor element 4, since Au that is not alloyed with the ultrafine metal wire 7 is exposed, A, I2 corrosion is likely to occur, resulting in a decrease in reliability.
■ＴＡＢ法■半導体素子４の接続部５を半導体素子４の内側にくる
ように設計すると、キャリアフィルム基板１６のインナ
ーリード部１７の長さ文が長くなるため、インナーリー
ド部１７が変形し易くなりインナーリード部を所望の接
続部５に接続できなかったり、インナーリード部１７が
半導体素子４の接続部５以外の部分に接触したりする。■TAB method■ If the connecting part 5 of the semiconductor element 4 is designed to be inside the semiconductor element 4, the length of the inner lead part 17 of the carrier film substrate 16 becomes longer, so that the inner lead part 17 is easily deformed. Otherwise, the inner lead portion may not be able to be connected to the desired connection portion 5, or the inner lead portion 17 may come into contact with a portion of the semiconductor element 4 other than the connection portion 5.
これを避けるためには半導体素子４の接続部５を半導体
素子４上の周辺に持ってくる必要が生じ、設計上の制限
を受ける。In order to avoid this, it is necessary to bring the connecting portion 5 of the semiconductor element 4 to the periphery above the semiconductor element 4, which is subject to design limitations.
■ＴＡＢ法においても、半導体素子４上の接続部のピッ
チ寸法は０．０９〜０．１５ｍｍ程度とる必要があり、
従ってワイヤポンディング法の問題点■で述べたと同様
に、接続部数を増加させることはむずかしくなる。■Even in the TAB method, the pitch dimension of the connection parts on the semiconductor element 4 must be approximately 0.09 to 0.15 mm.
Therefore, similar to the problem (2) of the wire bonding method, it is difficult to increase the number of connections.
■キャリアフィルム基板１６のインナーリード部１７が
半導体素子４の接続部５以外の部分に接触しないように
させるため所望のインナーリード部１７の接続形状が要
求されコスト高となる。(2) In order to prevent the inner lead portions 17 of the carrier film substrate 16 from coming into contact with portions other than the connection portions 5 of the semiconductor element 4, a desired connection shape of the inner lead portions 17 is required, which increases costs.
■半導体素子４の接続部５とインナーリード部１７とを
接続するためには、半導体素子４の接続部５またはイン
ナーリード部１７の接続部に金バンプをつけなければな
らずコスト高になる。(2) In order to connect the connecting portion 5 of the semiconductor element 4 and the inner lead portion 17, gold bumps must be attached to the connecting portion 5 of the semiconductor element 4 or the connecting portion of the inner lead portion 17, which increases the cost.
■ＣＣＢ法■半導体素子４の接続部５に半田バンプ３１を形成させ
なければならないためコスト高になる。■ CCB method ■ Solder bumps 31 must be formed on the connection portions 5 of the semiconductor element 4, which increases costs.
■バンプの半田量が多いと隣接する半田バンプとブリッ
ジ（隣接する半田バンプ同士が接触する現象）が生じ、
逆に少いと半導体素子４の接続部５と基板３２の接続部
３３が接続しなくなり電気的導通がとれなくなる。すな
わち、接続の信頼性が低くなる。さらに、半田量、接続
の半田形状が接続の信頼性に影響する（ろう接技術研究
会技術資料、Ｎｏ 、０１７− ’８４、ろう接技術研
究会発行）という問題がある。■If the amount of solder on a bump is large, bridges (a phenomenon in which adjacent solder bumps come into contact with each other) will occur between adjacent solder bumps.
On the other hand, if the amount is too small, the connecting portion 5 of the semiconductor element 4 and the connecting portion 33 of the substrate 32 will not be connected and electrical continuity will not be established. In other words, the reliability of the connection becomes low. Furthermore, there is a problem in that the amount of solder and the solder shape of the connection affect the reliability of the connection (Technical Data of the Brazing Technology Research Group, No. 017-'84, published by the Brazing Technology Research Group).
このように、半田バンプの量の多少が接続の信頼性に影
響するため半田バンプ３１の量のコント０−ルが必要と
されている。As described above, since the amount of solder bumps affects the reliability of the connection, it is necessary to control the amount of solder bumps 31.
■半田バンプ３１が半導体素子４の内側に存在すると接
続が良好に行なわれたか否かの目視検査がむずかしくな
る。(2) If the solder bumps 31 are present inside the semiconductor element 4, it becomes difficult to visually inspect whether or not the connection has been made well.
■半導体素子の放熱特性が悪い（参考資料；Ｅｌｅｃｔ
ｒｏｎｉｃ Ｐａｃｋａｇｉｎｇ Ｔｅｃｈｎｏｌｏｇ
ｙ １９８７．１（Ｖｏｌ。■Poor heat dissipation characteristics of semiconductor elements (reference material; Elect
ronic Packaging Technology
y 1987.1 (Vol.
３、 Ｎｏ、１） Ｐ、８８〜７１ ＮＩＫＫＥＩ
ＭＩＣＲＯＩＩＥＶＩ（：Ｅ！Ｊ。3, No. 1) P, 88-71 NIKKEI
MICROIIEVI (:E!J.
１９８８．５月、 Ｐ、９７〜１０８）ため、放熱特性
を良好たらしめるための多大な工夫が必要とされる。(May 1988, P. 97-108), therefore, great efforts are required to improve heat dissipation characteristics.
■第１７図及び第１８図に示す技術■絶縁膜７１の露出面７２と金属材７ｏの露出面７３、
さらに絶縁膜７１’の露出面７２°と金属材７０′の露
出面７３′を平らにしなければならず、そのための工数
が増し、コスト高になる。■Technique shown in FIGS. 17 and 18■Exposed surface 72 of insulating film 71 and exposed surface 73 of metal material 7o,
Furthermore, the exposed surface 72° of the insulating film 71' and the exposed surface 73' of the metal material 70' must be made flat, which increases the number of steps and costs.
■絶縁膜７１の露出面７２と金属材７ｏの露出面７３あ
るいは絶縁膜７１’の露出面７２’と金属材７０’の露
出面７３′に凹凸があるメ金属材７０と金属材７０’と
が接続しなくなり、信頼性が低下する。■The exposed surface 72 of the insulating film 71 and the exposed surface 73 of the metal material 7o or the exposed surface 72' of the insulating film 71' and the exposed surface 73' of the metal material 70' are uneven. will no longer connect, reducing reliability.
■第１９図に示す技術■位置決め後に、接続部７６と接続部７６′とを加圧し
て接続する際に、圧力が一定にはかかりにくいため、接
続状態にバラツキが生じ、その結果、接続部における接
触抵抗値のバラツキが大きくなる。そのため、接続の信
頼性が乏しくなる。■Technology shown in FIG. 19■ After positioning, when applying pressure to connect the connecting parts 76 and 76', it is difficult to apply constant pressure, so the connection state varies, and as a result, the connecting parts The variation in contact resistance value becomes large. Therefore, the reliability of the connection becomes poor.
また、多量の電流を流すと１発熱等の現象が生じるので
、多量の電流を流したい場合には不向きである。In addition, when a large amount of current is passed, phenomena such as heat generation occur, so it is not suitable when a large amount of current is desired to be passed.
■圧力が一定にかけられたとしても、異方性導電Ｍ７８
の導電粒子７９の配列により抵抗値のバラツキが大きく
なる。そのため、接続の信頼性に乏しくなる。また、大
電流容量が要求される接続には不向きである。■Even if a constant pressure is applied, anisotropic conductivity M78
Due to the arrangement of the conductive particles 79, variations in the resistance value become large. Therefore, the reliability of the connection becomes poor. Furthermore, it is not suitable for connections requiring large current capacity.
■隣接する接続部のピッチ（接続部に隣接する接続部中
心間の距＃）を狭くすると隣接する接続部の間の抵抗値
が小さくなることから高密度な接続には不向きである。(2) If the pitch between adjacent connecting parts (distance # between the centers of adjacent connecting parts) is narrowed, the resistance value between adjacent connecting parts will decrease, which is not suitable for high-density connections.
■回路基材７５，７５°の接続部７６．７６゜の出っ張
り量ｈ１のバラツキにより抵抗値が変化するため、ｈｌ
バラツキ量を正確に押さえることが必要である。■The resistance value changes due to variations in the amount of protrusion h1 at the connection part 76.76° of the circuit board 75, 75°, so hl
It is necessary to accurately control the amount of variation.
■さらに異方導電膜を、半導体素子と回路基材の接続、
また、第１の半導体素子と第２の半導体素子との接続に
使用した場合、上記■〜＠の欠点の他、半導体素子の接
続部にバンプを設けなければならなくなり、コスト高に
なるとｉ／１う欠点が生じる。■Additionally, anisotropic conductive films can be used to connect semiconductor elements and circuit substrates,
In addition, when used to connect the first semiconductor element and the second semiconductor element, in addition to the disadvantages described above, bumps must be provided at the connection part of the semiconductor element, which increases the cost. One disadvantage arises.
■第２０図に示す技術■加圧が必要であり、加圧治具が必要となる。■Technology shown in Figure 20■Pressure is required, and a pressure jig is required.
■エラスチックコネクタ８３の金属線８２と第１の回路
基材７５の接続部７６また、第２の回路基材７５°の接
続部７６′との接触抵抗は加圧力及び表面状態により変
化するため接続の信頼性は乏しい。■The contact resistance between the metal wire 82 of the elastic connector 83 and the connecting portion 76 of the first circuit substrate 75 and the connecting portion 76' of the second circuit substrate 75° changes depending on the pressing force and surface condition, so the connection has poor reliability.
■エラスチックコネクタ８３の金属線８２は剛体である
ため、加圧力が大であるとエラスチックコネクタ８３、
第１の回路基材７５、第２の回路基材７５”の表面が破
損する可俺性が大きい、また、加圧力が小であると、接
続の信頼性が乏しくなる。■Since the metal wire 82 of the elastic connector 83 is a rigid body, if the pressing force is large, the elastic connector 83
If the surfaces of the first circuit substrate 75 and the second circuit substrate 75'' are highly susceptible to damage, and if the pressing force is small, the reliability of the connection will be poor.
■さらに、回路基材７５ 、７５ ’の接続部７６．７
６°の出っ張り量ｈ２、またエラスチックコネクタ８３
の金属線８２の出っ張り量ｈ３とそのバラツキが抵抗値
変化及び破損に影響を及ぼすので、バラツキを少なくす
る工夫が必要とされる。■Furthermore, the connection portions 76.7 of the circuit substrates 75, 75'
6° protrusion h2, and elastic connector 83
Since the protrusion amount h3 of the metal wire 82 and its dispersion affect the change in resistance value and damage, it is necessary to take measures to reduce the dispersion.
■さらに、エラスチックコネクターを半導体素子と回路
基材の接続、また、第１の半導体素子と第２の半導体素
子との接続に使用した場合、■〜■と同様な欠点を生ず
る。(2) Further, when an elastic connector is used to connect a semiconductor element and a circuit substrate, or to connect a first semiconductor element and a second semiconductor element, the same drawbacks as in (1) to (2) occur.
本発明は１以上のような問題点をことごとく解決し、高
密度で高信頼性でしかも、低コストの新電気的接続部材
及びそれを用いた電気回路部材を提案するものであり、
従来の接続方式を置き変え得ることはもちろん、高密度
多点接続が得られ、熱等諸特性を向上させ得るものであ
る。The present invention solves all of the above problems and proposes a new high-density, high-reliability, and low-cost electrical connection member and an electric circuit member using the same.
Not only can the conventional connection method be replaced, but also high-density multi-point connections can be obtained, and various properties such as heat can be improved.
（以下余白）［問題点を解決するための手段］本発明は、接続部を有する第１の電気回路部品と、接続
部を有する第２の電気回路部品とを電気的に接続するた
めの電気的接続部材において、電気的接続部材は、金属
または合金よりなる複数の金属部材を、該金属部材の一
端を第１の電気部品側に露出させて、一方、該金属部材
の他端を該第２の電気回路部品側に露出させて、金属又
は合金からなる保持体に絶縁物質を介して埋設させてい
ることに第１の要旨を有する。(The following is a blank space) [Means for solving the problem] The present invention provides an electric circuit for electrically connecting a first electric circuit component having a connecting portion and a second electric circuit component having a connecting portion. In the electrical connection member, the electrical connection member includes a plurality of metal members made of metal or an alloy, with one end of the metal members exposed to the first electric component side, and the other end of the metal members exposed to the first electric component side. The first gist lies in that it is exposed on the side of the electric circuit component 2 and embedded in a holder made of metal or alloy with an insulating material interposed therebetween.
また、本発明は、接続部を有する第１の電気回路部品と
、接続部を有する第２の電気回路部品とを、両電気回路
部品を電気的に接続するための電気的接続部材を両電気
回路部品の間に介在させて、両電気回路部品の接続部に
おいて接続して構成される電気回路部材において、電気的接続部材は、金属または合金よりなる複数の金属
部材を、該金属部材の一端を第１の電気部品側に露出さ
せて、一方、該金属部材の他端を該第２の電気回路部品
側に露出させて、金属又は合金からなる保持体に絶縁物
質を介して埋設させており、第１の電気回路部品の接続部と第１の電気回路部品側に
露出した金属部材の一端とを接続し、また、第２の電気
回路部品の接続部と第２の電気回路部品側に露出した金
属部材の一端とを接続したことを特徴とする電気回路部
材に第２の要旨を有する。Further, the present invention provides an electrical connection member for electrically connecting a first electrical circuit component having a connecting portion and a second electrical circuit component having a connecting portion. In an electrical circuit member that is interposed between circuit components and connected at a connecting portion of both electrical circuit components, the electrical connection member connects a plurality of metal members made of metal or an alloy to one end of the metal member. is exposed to the first electric component side, while the other end of the metal member is exposed to the second electric circuit component side, and embedded in a holder made of metal or alloy with an insulating material interposed therebetween. The connection part of the first electric circuit component and one end of the metal member exposed on the first electric circuit component side are connected, and the connection part of the second electric circuit component is connected to the second electric circuit component side. A second aspect of the present invention relates to an electric circuit member characterized in that the electric circuit member is connected to one end of the metal member exposed to the metal member.
本発明における電気回路部品としては、例えば、半導体
素子、樹脂回路基板、セラミック基板、金属基板等の回
路基板（以下単に回路基板ということがある）、リード
フレーム等があげられる。すなわち、第１の電気回路部
品としてこれらの中のいずれかの部品を用い、第２の電
気回路部品としてこれらの中のいずれかの部品を涌いれ
ばよい。Examples of the electric circuit components in the present invention include semiconductor elements, circuit boards such as resin circuit boards, ceramic boards, and metal boards (hereinafter sometimes simply referred to as circuit boards), lead frames, and the like. That is, any one of these components may be used as the first electrical circuit component, and any one of these components may be used as the second electrical circuit component.
電気回路部品として接続部を有する部品が本発明の対象
となる。接続部の数は問わないが、接続部の数が多けれ
ば多いほど本発明の効果が顕著となる。The object of the present invention is a component having a connection part as an electric circuit component. Although the number of connection parts does not matter, the greater the number of connection parts, the more remarkable the effects of the present invention will be.
また、接続部の存在位置も問わないが、電気回路部品の
内部に存在するほど本発明の効果が顕著となる。Further, although the location of the connection portion does not matter, the effect of the present invention becomes more pronounced as the connection portion is located inside the electric circuit component.
本発明に係る電気的接続部材は、金属部材が、金属又は
合金からなる保持体に絶縁物質を介して埋設されている
。In the electrical connection member according to the present invention, a metal member is embedded in a holder made of metal or an alloy with an insulating material interposed therebetween.
この金属部材の一端は第１の電気回路部品側に露出して
おり、他の−＠ｔま第２の電気回路部品側に露出してい
る。One end of this metal member is exposed to the first electric circuit component side, and the other end -@t is exposed to the second electric circuit component side.
ここで、金属部材の材質としては、金が好ましいが、全
以外の任意の金属あるいは合金を使用することもできる
。例えば、Ｃｕ、Ａｎ、Ｓｎ。Here, as the material of the metal member, gold is preferable, but any metal or alloy other than gold can also be used. For example, Cu, An, Sn.
Ｐｂ−３ｎ等の金属あるいは合金があげられる。Examples include metals or alloys such as Pb-3n.
さらに、金属部材の断面は円形、四角形その他任意の形
状とすることができる。Furthermore, the cross section of the metal member can be circular, square, or any other shape.
また、金属部材の太さは特に限定されない。電気回路部
品の接続部のピッチを考慮して、例えば２０μｍφ以上
あるいは２０μｍφ以下にしてもよい。Further, the thickness of the metal member is not particularly limited. Considering the pitch of the connecting portions of the electric circuit components, the pitch may be set to, for example, 20 μmφ or more or 20 μmφ or less.
なお、金属部材の露出部は保持体と同一面としてもよい
し、また、保持体の面から突出させてもよい。この突出
は片面のみでもよいし両面でもよい。さらに突出させた
場合はバンプ状にしてもよい。Note that the exposed portion of the metal member may be on the same surface as the holder, or may protrude from the surface of the holder. This protrusion may be on one side only or on both sides. If it is made to protrude further, it may be made into a bump shape.
また、金属部材の間隔は、電気回路部品の接続部同士の
間隔と同一間隔としてもよいし、それより狭い間隔とし
てもよい。狭い間隔とした場合には電気回路部品と電気
的接続部材との位置決めを要することなく、電気回路部
品と電気的接続部材とを接続することが可能となる。Furthermore, the spacing between the metal members may be the same as the spacing between the connecting portions of the electric circuit components, or may be narrower than that. When the interval is narrow, it becomes possible to connect the electric circuit component and the electrical connection member without requiring positioning of the electric circuit component and the electrical connection member.
また、金属部材は保持体中に垂直に配する必要はなく、
第１の電気回路部品側から第２の電気回路部品側に向か
って斜行していてもよい。In addition, the metal member does not need to be arranged vertically in the holder;
It may run obliquely from the first electric circuit component side toward the second electric circuit component side.
さらに電気的接続部材は、１層あるいは２層以上の多層
からなるものでもよい。Furthermore, the electrical connection member may be composed of one layer or multiple layers of two or more layers.
本発明において保持体は金属又は合金からなり、保持体
と金属部材との間には絶縁物質を介在せしめる。In the present invention, the holder is made of metal or an alloy, and an insulating material is interposed between the holder and the metal member.
保持体の金属又は合金としては、例えば、Ａｇ、Ｃｕ、
Ａｕ、Ａｎ、Ｂｅ、Ｃａ、Ｍｇ。Examples of the metal or alloy of the holder include Ag, Cu,
Au, An, Be, Ca, Mg.
Ｍｏ、Ｎｉ、Ｓｉ、Ｗ、Ｆｅ、Ｔｉ、 Ｉｎ。Mo, Ni, Si, W, Fe, Ti, In.
Ｓｎ、Ｚｎその他の金属あるいはこれらの合金力）あげ
られる。(Sn, Zn and other metals or alloys thereof).
保持体と金属部材との間に絶縁物質を介在せしめる方法
としては例えば、保持体が陽極酸化処理が可能な金属又は合金からなる場
合（例えばＡＩＬ、Ｔｉ）には、保持体の金属部材が埋
設される部分に穴をあけた後保持体に対し陽極酸化処理
を行ない穴をあけた部分の表面は陽極酸化皮膜（陽極酸
化皮膜は絶縁性物質である。）を形成せしめる方法、保持体の金属部材が埋設される部分に穴をあけた後、保
持体に対し酸化処理、窒化処理、はう化処理、炭化処理
等の処理を行ない、穴の表面に酸化膜、窒化膜、はう化
膜、炭化物膜等を形成せしめる方法、保持体の金属部材が埋設される部分に穴をあけた後、セ
ラミック等を溶射あるいは蒸着せしめて絶縁物質を形成
せしめる方法、保持体の金属部材が埋設される部分に穴をあけ、その穴
に樹脂を塗布する方法、保持体と金属部材間を酸化処理、窒化処理、はう化処理
、炭化処理専行なって分離させる方法（木方法の場合は
保持体と金属部材が同一金属もしくは合金となる）（な
お、上記方法による絶縁物質の形成は、電気的接続部材
の全側面、第１電気回路部品側の面、第２電気回路部品
側の面について行なってもよい。）金属部材と保持体の間に、樹脂あるいは無機材料よりな
る介在物を配設する方法（例えば、金属部材と、金属部
材が埋設される穴との間に管状体をはめ込む方法）、等があげられる。For example, when the holder is made of a metal or alloy that can be anodized (e.g. AIL, Ti), the metal member of the holder may be buried. A method in which the holding body is anodized after making a hole in the part where the hole is made, and an anodized film is formed on the surface of the holed part (the anodic oxide film is an insulating material), and the metal of the holding body is anodized. After drilling a hole in the part where the component is to be buried, the holder is subjected to oxidation treatment, nitridation treatment, fertilization treatment, carbonization treatment, etc. to form an oxide film, nitride film, or fertilization film on the surface of the hole. , a method of forming a carbide film, etc., a method of making a hole in the part where the metal member of the holder is to be buried, and then thermally spraying or vapor depositing ceramic, etc. to form an insulating material, a method of embedding the metal member of the holder A method of drilling a hole in the part and applying resin to the hole, a method of separating the holder and the metal member by performing oxidation treatment, nitriding treatment, fertilization treatment, and carbonization treatment (in the case of the wooden method, the holder and the metal member are separated) (The metal members are made of the same metal or alloy) (The insulating material is formed by the above method on all sides of the electrical connection member, the surface on the first electric circuit component side, and the surface on the second electric circuit component side. ) A method of arranging an inclusion made of resin or inorganic material between the metal member and the holding body (for example, a method of fitting a tubular body between the metal member and the hole in which the metal member is embedded) , etc.
また、上記した方法のうち、樹脂よりなる介在物を配設
する場合における樹脂の種類には特に限定されない。例
えば、絶縁性の樹脂を用いればよい。さらに、樹脂を用
いる場合には樹脂の種類も問わない。熱硬化性樹脂、紫
外線硬化樹脂、熱可塑性樹脂のいずれでもよい。例えば
、ポリイミド樹脂、ポリフェニレンサルファイド樹脂、
ポリエーテルサルフォン樹脂、ポリエーテルイミド樹脂
、ポリスチレン樹脂、シリコーン樹脂、フッ素樹脂、ポ
リカーボネート樹脂、ポリジフェニールエーテル樹脂、
ポリベンジルイミダゾール樹脂、フェノール樹脂、尿素
樹脂、メラミン樹脂、アルキッド樹脂、エポキシ樹脂、
ポリアミドイミド樹脂、ポリプロプレン樹脂、ポリ塩化
ビニル樹脂、ポリスチレン樹脂その他の樹脂を使用する
ことができる。Furthermore, among the above-described methods, there is no particular limitation on the type of resin when disposing inclusions made of resin. For example, an insulating resin may be used. Furthermore, when using a resin, the type of resin does not matter. Any of thermosetting resin, ultraviolet curing resin, and thermoplastic resin may be used. For example, polyimide resin, polyphenylene sulfide resin,
Polyether sulfone resin, polyetherimide resin, polystyrene resin, silicone resin, fluororesin, polycarbonate resin, polydiphenyl ether resin,
Polybenzylimidazole resin, phenolic resin, urea resin, melamine resin, alkyd resin, epoxy resin,
Polyamideimide resin, polypropylene resin, polyvinyl chloride resin, polystyrene resin and other resins can be used.
また、これら樹脂の中に金属材料乃至無機材料からなる
粉体乃至繊維を分散せしめてもよい。分散せしめる場合
、粉体乃至繊維の形状、大きさ、分散位置、数量等は特
に問わない。ただ、金属部材と保持体とが導通しない範
囲に限られる。さらに、これら樹脂の中に金属材料乃至
無機材料からなる板状体、棒状体、球状体等を埋め込ん
でもよい。この場合においても板状体、棒状体、球状体
等の埋め込み位置、形状、大きさ、数量等は特に限定さ
れない。、また、上記した方法のうち、金属部材と保持体との間に
無機材料よりなる介在物を配設する場合における無機材
料としては、例えば、５ｉ０２゜Ｂ２Ｏ３，ＡＩｌ、２
０３．Ｎａ２Ｏ，に２０゜Ｃａｂ、ＺｎＯ，Ｂａｄ、Ｐ
ｂＯ，５ｂ２０３ 。Further, powder or fibers made of a metal material or an inorganic material may be dispersed in these resins. When dispersing, the shape, size, dispersed position, quantity, etc. of the powder or fibers are not particularly limited. However, this is limited to a range where the metal member and the holder are not electrically connected. Furthermore, a plate-shaped body, a rod-shaped body, a spherical body, etc. made of a metal material or an inorganic material may be embedded in these resins. In this case as well, the embedded position, shape, size, quantity, etc. of the plate-shaped body, rod-shaped body, spherical body, etc. are not particularly limited. In addition, among the methods described above, examples of inorganic materials in the case where an inclusion made of an inorganic material is disposed between the metal member and the holder include 5i02°B2O3, AIl, 2
03. Na2O, 20°Cab, ZnO, Bad, P
bO,5b203.
Ａｓ２Ｏ３，Ｌａ２ ｏ３．ＺｒＯ２，Ｂａｄ。As2O3, La2o3. ZrO2, Bad.
Ｐ２Ｏ５，ＴｉＯ２，ＭｇＯ，ＳｉＣ，Ｂｅｄ。P2O5, TiO2, MgO, SiC, Bed.
ＢＰ、ＢＮ、ＡＩＬＮ、Ｂ４ Ｃ，ＴａＣ。BP, BN, AILN, B4C, TaC.
Ｔｉ Ｂ２ 、ＣｒＢ２．ＴｉＮ、Ｓｉ３Ｎ４ 。Ti B2 , CrB2. TiN, Si3N4.
Ｔａ２０５等のセラミック、ダイヤモンド、ガラス、カ
ーボン、ボロンその他の無機材料があげられる。Examples include ceramics such as Ta205, diamond, glass, carbon, boron, and other inorganic materials.
なお、上記の樹脂あるいは無機材料の中から、熱伝導性
のよい樹脂を使用すれば、半導体素子が熱を持ってもそ
の熱を樹脂あるいは無機材料を介して放熱することがで
きるのでより好ましい木発明に係る電気回路部材におい
ては、上記した電気的接続部材を用いて第１の電気回路
部品と第２の電気回路部品とを接続する。Among the above resins and inorganic materials, if a resin with good thermal conductivity is used, even if the semiconductor element has heat, the heat can be radiated through the resin or inorganic material, so wood is more preferable. In the electric circuit member according to the invention, the above-described electric connection member is used to connect the first electric circuit component and the second electric circuit component.
接続方法としては、公知の任意の接続方法な用いればよ
い。機械的方法、例えば、電気回路部品と電気的接続部
材とを押圧して接続してもよい。Any known connection method may be used as the connection method. The connection may be made mechanically, for example by pressing the electrical circuit component and the electrical connection member.
［作用］本発明では、上記した電気的接続部材を使用して第１の
電気回路部品と第２の電気回路部品とを接続しているの
で、電気回路部品の接続部を内部に配置することも可能
となり、接続部の数を増加させることができ、ひいては
高密度化が可能となる。[Operation] In the present invention, since the above-described electrical connection member is used to connect the first electrical circuit component and the second electrical circuit component, the connecting portion of the electrical circuit component can be placed inside. This also makes it possible to increase the number of connection parts, which in turn makes it possible to increase the density.
また、電気的接続部材は薄くすることが可能であり、こ
の面からも電気回路部材の薄型化が可能となる。Further, the electrical connection member can be made thinner, and from this point of view as well, it is possible to make the electrical circuit member thinner.
さらに、電気的接続部材に使用する金属部材の量は少な
いため、たとえ、高価な金を金属部材として使用したと
してもコストが安いものとなる。Furthermore, since the amount of metal members used for the electrical connection member is small, the cost is low even if expensive gold is used as the metal member.
本発明においては、電気的接続部材の保持体が金属又は
合金からなるので、第１の電気回路部品から第２の電気
回路部品への熱伝導性、また、第２の電気回路部品から
第１の電気回路部品への熱伝導性が良くなる。つまり、
電気的接続部材の熱伝導性が良好であり、仮に、第１の
電気回路部品として発熱量の大きな電気回路部品を使用
し、第２の電気回路部品として熱影響の少ない電気回路
部品番選択したとすると、第１の電気回路部品から発熱
した熱は、電気的接続部材を介して第２の電気回路部品
へといち早く伝導され、この熱は第２の電気回路部品か
ら放熱される。従って、放熱特性の良好な電気回路部材
を得ることが可能となる。In the present invention, since the holder of the electrical connection member is made of metal or an alloy, thermal conductivity from the first electrical circuit component to the second electrical circuit component and from the second electrical circuit component to the first electrical circuit component are improved. Improves thermal conductivity to electrical circuit components. In other words,
The thermal conductivity of the electrical connection member is good, and if an electrical circuit component with a large heat value is used as the first electrical circuit component, and an electrical circuit part number with little heat influence is selected as the second electrical circuit component. In this case, the heat generated from the first electric circuit component is quickly conducted to the second electric circuit component via the electrical connection member, and this heat is radiated from the second electric circuit component. Therefore, it is possible to obtain an electric circuit member with good heat dissipation characteristics.
さらに、保持体が金属又は合金からなるので、電気回路
部品から外界に出る電磁気ノイズを減少せしめることが
でき、また外界から電気回路部品に入るノイズを減少せ
しめることができる。Furthermore, since the holder is made of metal or an alloy, it is possible to reduce electromagnetic noise emitted from the electric circuit components to the outside world, and it is also possible to reduce noise that enters the electric circuit components from the outside world.
（以下余白）［実施例］（第１実施例）木発明の第１実施例を第１図及び第２図に基づいて説明
する。(The following is a blank space) [Example] (First Example) A first example of the wooden invention will be described based on FIGS. 1 and 2.
本実施例では、電気的接続部材１２５は、金属又は合金
よりなる複数の金属部材１０７を、該金属部材１０７の
一端を第１の回路基板ｌＯ１側に露出させて、一方、該
金属部材１０７の他端を該第２の回路部基板１０４側に
露出させて、金属又は合金からなる保持体１２２に絶縁
物質１４０を介して埋設させている。In this embodiment, the electrical connection member 125 includes a plurality of metal members 107 made of metal or an alloy, with one end of the metal members 107 exposed to the first circuit board lO1 side, and The other end is exposed to the second circuit board 104 side, and is embedded in a holder 122 made of metal or alloy with an insulating material 140 interposed therebetween.
そして、電気回路部材は、接続部１０２を有する第１の
電気回路部品である回路基板１０１と、接続部１０５を
有する第２の電気回路部品である回路基板１０４とを、
両回路基板１０１，１０４を電気的に接続するための上
記電気的接続部材１２５を両者の間に介在させて、両回
路基板１０１．１０４の接続部１０２，１０５において
接続して構成されている。The electric circuit member includes a circuit board 101 which is a first electric circuit component having a connecting portion 102 and a circuit board 104 which is a second electric circuit component having a connecting portion 105.
The electrical connecting member 125 for electrically connecting both circuit boards 101 and 104 is interposed between them, and the circuit boards 101 and 104 are connected at connecting portions 102 and 105.
以下に本実施例をより詳細に説明する。This example will be explained in more detail below.
まず、電気的接続部材１２５の一製造例を説明しつつ電
気的接続部材１２５を説明する。First, the electrical connection member 125 will be explained while explaining one manufacturing example of the electrical connection member 125.
第２図に一製造例を示す。FIG. 2 shows one manufacturing example.
アルミニウムよりなる保持体１２２に、２０μｍφより
も大きい内径なの穴１４２を４０μｍピッチであける。Holes 142 having an inner diameter larger than 20 μmφ are bored at a pitch of 40 μm in the holder 122 made of aluminum.
次に、アルマイト処理（陽極酸化処理）を施し、アルマ
イト処理後、保持体１２２の穴１４２に、２０μｍφの
金等の金属あるいは合金よりなる金属線１２１を通し、
アルミニウムよりなる保持体１２２と金属１ｉｉ２ｔと
の間に樹脂１２３を入れ、樹脂１２３を硬化させる。硬
化した樹脂１２３とアルマイト処理により形成されたア
ルマイト皮膜（図示せず）は絶縁物質となる。その後、
金属線１２１を点線１２４の位置でスライス切断し、電
気的接続部材１２５を作製する。Next, alumite treatment (anodization treatment) is performed, and after the alumite treatment, a metal wire 121 made of a metal such as gold or an alloy with a diameter of 20 μm is passed through the hole 142 of the holder 122.
A resin 123 is placed between the holder 122 made of aluminum and the metal 1ii2t, and the resin 123 is hardened. The cured resin 123 and an alumite film (not shown) formed by alumite treatment become an insulating material. after that,
The metal wire 121 is sliced at the dotted line 124 to produce an electrical connection member 125.
このようにして作成された電気的接続部材１２５を第２
図（ｂ）、（Ｃ）に示す。The electrical connection member 125 created in this way is
Shown in Figures (b) and (C).
なお、本例では、保持体１２２をアルマイト処理した後
に、金属線１２１を通し、樹脂１２３を硬化したが、樹
脂１２３を硬化した後、アルマイト処理を施してもよい
、また、金属線１２１に樹脂１２３を均一に塗付し、保
持体１２２の穴１４２に通してもよい。In this example, the metal wire 121 is passed through the holder 122 after alumite treatment and the resin 123 is hardened. However, the alumite treatment may be performed after the resin 123 is hardened. 123 may be applied uniformly and passed through the hole 142 of the holder 122.
さらに、金属線１２１の切断はアルマイト処理の前でも
後の工程でもよい。Further, the metal wire 121 may be cut in a step before or after the alumite treatment.
また、本例では樹脂１２３を金属線１２１とアルミニウ
ム１２２間に入れたが、樹脂１２３でなくとも電気的絶
縁材料ならばいかなるものでもよい。さらに、樹脂１２
３を用いずに、金属線１２１はアルミニウム１２２のア
ルマイト皮膜と直接波していてもよい、この場合にはア
ルマイト処理は金属線１２１を通す前に行なう。Further, in this example, the resin 123 is inserted between the metal wire 121 and the aluminum 122, but any electrically insulating material may be used instead of the resin 123. Furthermore, resin 12
3, the metal wire 121 may be directly corrugated with the alumite film of the aluminum 122. In this case, the alumite treatment is performed before the metal wire 121 is passed through.
また、切断後に金属線１２１のブレをなくすために研磨
を行なってもよい、さらに、研磨によらず他の方法でブ
レをなくしてもよい。In addition, polishing may be performed to eliminate wobbling of the metal wire 121 after cutting, and furthermore, other methods may be used to eliminate wobbling instead of polishing.
本例ではアルマイト処理を行なった例を示したが、樹脂
１２３が単独でも絶縁物質となるのでアルマイト処理を
行なわすともよい。Although this example shows an example in which alumite treatment was performed, since the resin 123 alone serves as an insulating material, alumite treatment may also be performed.
このように作成された電気的接続部材１２５において、
金属線１２１が金属部材１０７を構成し、樹脂１２３と
アルマイト皮膜が絶縁物質１４０を構成し、保持体１２
２と絶縁物質１４０、金属部材１０７とが電気的接続部
材１２５を構成する。In the electrical connection member 125 created in this way,
The metal wire 121 constitutes the metal member 107, the resin 123 and the alumite film constitute the insulating material 140, and the holder 12
2, the insulating material 140, and the metal member 107 constitute the electrical connection member 125.
この電気的接続部材１２５においては金属部材となる金
属線１２１同士は樹脂１２３により電気的に絶縁されて
いる。また、金属線１２１の一端は回路基板１０１側に
露出し、他端は回路基板１０４側に露出している。この
露出している部分はそれぞれ回路基板１０１，１０４と
の接続部１０８．１０９となる。In this electrical connection member 125, metal wires 121 serving as metal members are electrically insulated from each other by resin 123. Further, one end of the metal wire 121 is exposed to the circuit board 101 side, and the other end is exposed to the circuit board 104 side. These exposed portions become connection portions 108 and 109 to the circuit boards 101 and 104, respectively.
次に、第１の回路基板１０１、電気的接続部材１２５、
第２の回路基板１０４を用意する。本例で使用する回路
基板ｌｏｔ、１０４は、第１図に示すように、その内部
に多数の接続部１０２゜１０５を有している。Next, the first circuit board 101, the electrical connection member 125,
A second circuit board 104 is prepared. The circuit board lot 104 used in this example has a large number of connection parts 102 and 105 therein, as shown in FIG.
なお、：ｊｔ、Ｈの回路基板１０１の接続部１０２は、
第２の回路基板１０４の接続部１０５及び電気的接続部
材１２５の接続部１０８，１０９に対応する位置に金属
が露出している。In addition, the connection part 102 of the circuit board 101 of :jt,H is as follows:
Metal is exposed at positions corresponding to the connection portion 105 of the second circuit board 104 and the connection portions 108 and 109 of the electrical connection member 125.
第１の回路基板１０１の接続部１０２と、電気的接続部
材１２５の接続部１０８とを、又は、第２の回路基板１
０４の接続部１０５と電気的接続部材１２５の接続部１
０９が対応するように位置決めを行ない、位置決め後、
接続を行なう。Connecting portion 102 of first circuit board 101 and connecting portion 108 of electrical connecting member 125, or
Connection part 1 between the connection part 105 of 04 and the electrical connection member 125
Perform positioning so that 09 corresponds, and after positioning,
Make the connection.
以上のようにして作成した電気回路部材につき接続状態
を調べたところ、高い信頼性をもって接続されていた。When the connection state of the electric circuit member produced as described above was examined, it was found that the connection was highly reliable.
（第２実施例）第３図に第２実施例を示す。(Second example)FIG. 3 shows a second embodiment.
本例は、接続部５２を有する第１の電気回路部品として
回路基板５１を、第２の電気回路部品として内部に多数
の接続部５を有する半導体素子４を使用した。In this example, a circuit board 51 is used as a first electric circuit component having a connection part 52, and a semiconductor element 4 having a large number of connection parts 5 therein is used as a second electric circuit component.
なお、電気的接続部材１２５としては半導体素子４に対
応する寸法のものを使用した。Note that as the electrical connection member 125, one having dimensions corresponding to the semiconductor element 4 was used.
他の点は第１実施例と同様である。Other points are similar to the first embodiment.
本例においても接続部は高い信頼性を持って接続されて
いた。In this example as well, the connection section was connected with high reliability.
（第３実施例）第４図に第３実施例を示す。(Third example)FIG. 4 shows a third embodiment.
本例は、第１の電気回路部品が半導体素子４であり、第
２の電気回路部品が回路基板５１である例である。In this example, the first electric circuit component is the semiconductor element 4, and the second electric circuit component is the circuit board 51.
なお、接続後は回路基板５１の上面にリードフレーム１
を接続し、封止材６３により封止した。Note that after connection, the lead frame 1 is placed on the top surface of the circuit board 51.
were connected and sealed with a sealing material 63.
他の点は第１実施例と同様である。Other points are similar to the first embodiment.
本例においても接続部は高い信頼性を持って接続されて
いた。In this example as well, the connection section was connected with high reliability.
（第４実施例）第５図に第４実施例を示す。(Fourth example)FIG. 5 shows a fourth embodiment.
本例は、第１の電気回路部品が半導体素子４゛であり、
第２の電気回路部品が半導体素子４である例であり、本
例では、電気的接続部材として半導体素子４に対応した
寸法のものを使用し、リードフレームｌｔ−電気的接続
部材１２５の第１の半導体素子４°側に露出した金属部
材に接続している。In this example, the first electric circuit component is a semiconductor element 4゛,
This is an example in which the second electric circuit component is the semiconductor element 4, and in this example, an electrical connection member having dimensions corresponding to the semiconductor element 4 is used, and the first electrical connection member 125 of the lead frame lt-electrical connection member 125 is It is connected to the metal member exposed on the 4° side of the semiconductor element.
他は第３実施例と同様である。The rest is the same as the third embodiment.
本例においても接続部は高い信頼性を持って接続されて
いた。In this example as well, the connection section was connected with high reliability.
（第５実施例）第６図に第５実施例を示す。(Fifth example)FIG. 6 shows a fifth embodiment.
第５実施例は、第１の電気回路部品、第２の電気回路部
品として、接続部以外の部分が絶ｌ＆膜１０３．１０６
で覆われている回路基板１０１ 。In the fifth embodiment, as the first electric circuit component and the second electric circuit component, the parts other than the connection part are disconnected and the membrane 103.106.
A circuit board 101 covered with.
１０４を使用している例である。This is an example in which 104 is used.
また、電気的接続部材としては第７図に示すものを使用
した。すなわち、第７図に示すように金属又は合金から
なる保持体１２２に、絶縁物質である樹脂１２３を介し
て金属部材１０７が埋設されている電気的接続部材１２
５は、金属部材１０７の露出している部分が保持体１２
２の面から突出している。このような電気的接続部材１
２５の作成は、例えば、次の方法によればよい。Further, as an electrical connection member, one shown in FIG. 7 was used. That is, as shown in FIG. 7, there is an electrical connection member 12 in which a metal member 107 is embedded in a holder 122 made of metal or an alloy through a resin 123 which is an insulating material.
5, the exposed part of the metal member 107 is attached to the holder 12
It sticks out from the 2nd side. Such an electrical connection member 1
25 may be created, for example, by the following method.
まず、第１実施例で述べた方法ように、アルミニウムよ
りなる保持体１２２の穴に金属線１２１を通した後、保
持体１２２の面よりｌｏ＃Ｌｍ以上厚く、樹脂を塗付し
た後、樹脂を硬化させる。その後、保持体１２２の面か
らｌｏＩＬｍ程度突出した位置で切断を行なう０次いで
、塗付した樹脂をエツチングにより除去すれば保持体１
２２の面より１１０１Ｌ金属線１２１が突出した電気的
接続部材１２５が得られる。First, as in the method described in the first embodiment, after passing the metal wire 121 through the hole of the holder 122 made of aluminum, a resin is applied to the surface of the holder 122 to a thickness of lo#Lm or more. harden. After that, cutting is performed at a position protruding from the surface of the holder 122 by about loILm.Next, if the applied resin is removed by etching, the holder 122 is cut.
An electrical connection member 125 in which the 1101L metal wire 121 protrudes from the surface of 22 is obtained.
なお、本実施例では金属線１２１の突出量を１０ ｐｍ
としたが、いかなる量でもよい。Note that in this embodiment, the protrusion amount of the metal wire 121 is set to 10 pm.
However, any amount may be used.
また、金属線１２１を突出させる方法としてはエツチン
グに限らず、他の化学的な方法又は機械的な方法を使用
してもよい。Furthermore, the method for making the metal wire 121 protrude is not limited to etching, and other chemical or mechanical methods may be used.
他の点は第１実施例と同様である。Other points are similar to the first embodiment.
なお、突出部を、電気的接続部材１２５を金属線１２１
の位置に凹部を持った型に挟み込み、金属線１２１の突
起１２６をつぶすことにより第８図に示すようなバンプ
１５０を形成してもよい。Note that the protruding portion and the electrical connection member 125 are connected to the metal wire 121.
A bump 150 as shown in FIG. 8 may be formed by inserting the metal wire 121 into a mold having a recess at the position and crushing the protrusion 126 of the metal wire 121.
この場合金属線１２１は保持体１２０から脱落しにくく
なる。In this case, the metal wire 121 becomes difficult to fall off from the holder 120.
なお１、本例でも、金属ｍ１２１が金属部材１０７を構
成し、さらに、アルミニウムよりなる保持体１２２を構
成し、アルマイト皮膜（図示せず）と樹脂１２３が絶縁
性物質１４０を構成する。1. Also in this example, the metal m121 constitutes the metal member 107, further constitutes the holder 122 made of aluminum, and the alumite film (not shown) and the resin 123 constitute the insulating substance 140.
なお、バンプを作成するのには突起を熱で溶融させ、バ
ンプを作成してもよいし、他のいかなる方法でもよい。Note that the bumps may be created by melting the protrusions with heat, or any other method may be used.
本例においても接続部は高い信頼性を持って接続されて
いた。In this example as well, the connection section was connected with high reliability.
（第６実施例）第９図に第６実施例を示す。(6th example)FIG. 9 shows a sixth embodiment.
本例は、第１の電気回路部品として半導体素子４を使用
し、第２の電気部品としてリードフレームｌを使用した
例である。In this example, a semiconductor element 4 is used as the first electrical circuit component, and a lead frame I is used as the second electrical component.
他の点は第５実施例と同様である。Other points are similar to the fifth embodiment.
本例においても接続部は高い信頼性を持って接続されて
いた。In this example as well, the connection section was connected with high reliability.
（第７実施例）第１０図に第７実施例を示す。(Seventh Example)FIG. 10 shows a seventh embodiment.
本例においては、電気的接続部材１２５は、第５実施例
に示した電気的接続部材と異なる。すなわち、本例の電
気的接続部材１２５においては、金属部材同士のピッチ
が第５実施例で示したものよりも狭くなっている。すな
わち、本例では、第１の回路基板接続部の間隔よりも狭
い間隔に金属部材１０７同士のピッチを設定しである。In this example, the electrical connection member 125 is different from the electrical connection member shown in the fifth embodiment. That is, in the electrical connection member 125 of this example, the pitch between the metal members is narrower than that shown in the fifth example. That is, in this example, the pitch between the metal members 107 is set to be narrower than the interval between the first circuit board connecting portions.
つまり、第５実施例では、第１の回路基板１０１と第２
の回路基板１０４との接続位置に電気的接続部材１２５
の接続位置を配設したため、電気的接続部材１２５の位
置決めが必要であったが、本例では、第１の回路基板１
０１と第２の回路基板１０４との位置決めは必要である
が、電気的接続部材１２５との位置決めは不要となる。That is, in the fifth embodiment, the first circuit board 101 and the second
An electrical connection member 125 is located at the connection position with the circuit board 104.
However, in this example, the first circuit board 1
01 and the second circuit board 104 is necessary, but positioning with the electrical connection member 125 is not necessary.
そのため、第１の回路基板ｌＯ１と第２の回路基板１０
４の接続寸法（ｄｌｌ、Ｆｉｌ）と電気的接続部材の接
続寸法（ｄ１２．ＰＩ３）を適切な値に選ぶことにより
位置決めなしで接続することも可能である。Therefore, the first circuit board lO1 and the second circuit board 10
It is also possible to connect without positioning by selecting appropriate values for the connection dimensions (dll, Fil) of No. 4 and the connection dimensions (d12.PI3) of the electrical connection member.
本例ではアルミニウムよりなる保持体を陽極酸化して陽
極酸化皮膜を形成せしめ、この皮膜を絶縁物質とした。In this example, a holder made of aluminum was anodized to form an anodized film, and this film was used as an insulating material.
本例においても接続部は高い信頼性を持って接続されて
いた。In this example as well, the connection section was connected with high reliability.
（第８実施例）第１１図に第８実施例に使用する電気的接続部材を示す
。(Eighth Example) FIG. 11 shows an electrical connection member used in the eighth example.
第１１図（ａ）は電気的接続部材の斜視図、第１１図（
ｂ）は上記電気的接続部材の断面図である。FIG. 11(a) is a perspective view of the electrical connection member, FIG.
b) is a sectional view of the electrical connection member.
かかる電気的接続部材の作成例を次に述べる。An example of making such an electrical connection member will be described next.
まず、第１実施例に示した製法で、保持体中に金属部材
が絶縁物質を介して埋設されている電気的接続部材１２
８，１２９，１３０を３枚用意する。First, an electrical connection member 12 in which a metal member is embedded in a holder via an insulating material by the manufacturing method shown in the first embodiment.
Prepare three pieces of 8, 129, and 130.
１枚目１２８の金属線１２１の位置はｍｆｊｎ列目で、
ｍａ、ｎｂだけ中心から変位している。２枚目１２９の
金属線１２１の位置はｍ行ｎ列目でｍａｃ、ｎｂｃだけ
中心から変位している。３枚目１３０の金属線１２１の
位置はｍ行ｎ列でｍａｄ、ｎｂｄだけ中心から変位して
いる。ａ、ｂ。The position of the metal wire 121 in the first sheet 128 is in the mfjnth column,
It is displaced from the center by ma and nb. The position of the metal wire 121 in the second sheet 129 is in the mth row and nth column, and is displaced from the center by mac and nbc. The position of the metal wire 121 of the third sheet 130 is in m rows and n columns, and is displaced from the center by mad and nbd. a, b.
ｃ、ｄの値は上下の金属１２１は導通するが左右には互
いに電気的に導通しない“ような値をとる。The values of c and d are such that the upper and lower metals 121 are electrically conductive, but the left and right sides are not electrically conductive to each other.
３枚の電気的接続部材を位置決めし、熱圧着等の方法を
用い積層し、電気的接続部材１２５を作成する。The three electrical connection members are positioned and laminated using a method such as thermocompression bonding to create the electrical connection member 125.
なお、本例においては、電気的接続部材の金属の位置を
ｍ行ｎ列というように規則をもった位置を選んだが、上
下の金属が導通し、左右には互いに電気的に導通しない
ようにすればランダムでもよい。In addition, in this example, the positions of the metals of the electrical connection members were selected according to rules such as m rows and n columns, but the metals on the top and bottom were conductive, and the left and right sides were not electrically conductive with each other. It can be random if you do.
また、本例では３層積層する場合について述べたが、２
枚以上であれば何枚でもよい、また、熱圧着の方法を用
いて積層すると述べたが、圧着、接着等の方法を用いて
もよい、さらに、本例の電気的接続部材を加工して第７
図に示すように突起を設けてもよいし、第８図に示した
ようにバンプ１５０を設けてもよい。In addition, although this example describes the case where three layers are laminated, two
Any number of layers may be used as long as the electrical connection member of this example is laminated using a thermocompression bonding method. 7th
A protrusion may be provided as shown in the figure, or a bump 150 may be provided as shown in FIG.
本例においても接続部は高い信頼性を持って接続されて
いた。In this example as well, the connection section was connected with high reliability.
（第９実施例）第１２図に第９実施例に使用する電気的接続部材を示す
。(Ninth Example) FIG. 12 shows an electrical connection member used in the ninth example.
第１２図（ａ）は電気的接続部材の製造途中の断面図、
第１２図（ｂ）は上記電気的接続部材の斜視図、第１２
図（Ｃ）は上記の断面図である。FIG. 12(a) is a cross-sectional view of the electrical connection member during manufacture;
FIG. 12(b) is a perspective view of the electrical connection member,
Figure (C) is the above sectional view.
本実施例に係る電気的接続部材１２５の一製造例を述べ
る。An example of manufacturing the electrical connection member 125 according to this embodiment will be described.
予め絶縁皮膜を設けた保持体１２２に２０μｍφより大
きい径の穴１４２をあけておく。次に穴１４２に２０μ
ｍφの金等の金属あるいは合金よりなる金属線１２１を
通し、樹脂１２３を保持体１２２と金属線１２１との間
に入れ、樹脂１２３を硬化させる。硬化した樹脂１２３
と絶縁皮膜は絶縁物質となる。その後、金属線１２１を
点線１続部材１２５を第１２図（ｂ）、（ｃ）に示す。A hole 142 having a diameter larger than 20 μmφ is drilled in the holder 122 provided with an insulating film in advance. Next, insert 20μ into hole 142.
A resin 123 is placed between the holder 122 and the metal wire 121 through a metal wire 121 made of a metal such as gold or an alloy having a diameter of mφ, and the resin 123 is hardened. Hardened resin 123
and the insulating film becomes an insulating material. Thereafter, the metal wire 121 is connected to the dotted line member 125 as shown in FIGS. 12(b) and 12(c).
また、本例の電気的接続部材を加工して、第７図に示す
ように突起を設けてもよいし、第８図に示すようにバン
ブ１５０を設けてもよい。Further, the electrical connection member of this example may be processed to provide a protrusion as shown in FIG. 7, or a bump 150 as shown in FIG. 8.
本実施例の第１の回路部品及び第２の電気回路部品は、
それぞれ、半導体素子、回路基板、リードフレーム等の
回路基材のうちの１つである。The first circuit component and the second electric circuit component of this example are:
Each of them is one of circuit base materials such as a semiconductor element, a circuit board, and a lead frame.
本例においても接続部は高い信頼性を持って接続されて
いた。In this example as well, the connection section was connected with high reliability.
［発明の効果］本発明は以上のように構成したので次の数々の効果が得
られる。[Effects of the Invention] Since the present invention is configured as described above, the following numerous effects can be obtained.
１、半導体素子と回路基板、リードフレーム等の回路基
材の接続に関し、信頼性の高い接続が得られる。従って
、従来用いられてきたワイヤポンディング方式、ＴＡＢ
方式、ＣＣＢ方式を置き変えることが可能となる。1. Highly reliable connections between semiconductor elements and circuit substrates such as circuit boards and lead frames can be obtained. Therefore, the conventionally used wire bonding method, TAB
It becomes possible to replace the CCB method.
２、本発明によると電気回路部品の接続部をいかなる位
置（特に内部）にも配置することができることからワイ
ヤポンディング方式、ＴＡＢ方式よりもさらに多点接続
が可能となり、多ピン数接続向きの方式となる。2. According to the present invention, the connection part of the electric circuit component can be placed in any position (especially inside), so it is possible to connect at more points than the wire bonding method or the TAB method, and it is suitable for connection with a large number of pins. This is the method.
さらに電気的接続部材の隣接金属間に絶縁物質が存在す
ることにより隣接金属間が電気的に導通しないことより
ＣＣＢ方式よりもさらに多点接続が可能となる。Further, since the presence of an insulating material between adjacent metals of the electrical connection member prevents electrical conduction between adjacent metals, more multi-point connections are possible than in the CCB method.
３、電気的接続部材において使用される金属部材の量は
従来に比べ微量であるため、仮に金属部材に金等の高価
な金属を使用しても従来より安価となる。3. Since the amount of metal members used in the electrical connection member is small compared to the conventional one, even if expensive metal such as gold is used for the metal member, it will be cheaper than the conventional one.
４、高密度の半導体装置等が得られる。4. High-density semiconductor devices and the like can be obtained.
５、電気的接続部材の電気的絶縁物質として熱伝導性の
良い材料を選択することにより、電気回路部品からの放
熱性が良好となり、ひいては放熱性が良い半導体装置が
得られる。特に本発明では電気的接続部材は、金属部材
との接触部を除き金属又は合金により構成されているの
で、特に放熱性が良好な半導体装置が得られる。5. By selecting a material with good thermal conductivity as the electrical insulating material of the electrical connection member, the heat dissipation from the electric circuit components becomes good, and as a result, a semiconductor device with good heat dissipation can be obtained. In particular, in the present invention, since the electrical connection member is made of metal or an alloy except for the contact portion with the metal member, a semiconductor device with particularly good heat dissipation properties can be obtained.
６、電気的接続部材の保持体は金属又は合金からなるの
で、電気回路部品から外部への電磁気ノイズあるいは外
部から電気回路部品へのノイズの侵入を減少せしめるこ
とができ、特性が良好て、信頼性の高い電気回路部材ひ
いては半導体装置が得られる。6. Since the holder of the electrical connection member is made of metal or alloy, it can reduce electromagnetic noise from the electrical circuit components to the outside or noise intrusion from the outside into the electrical circuit components, and has good characteristics and is reliable. Thus, an electric circuit member with high performance and a semiconductor device can be obtained.
第１図は第１実施例を示す断面図である。第１図（ａ）
は接続前の状態を示し、第１図（ｂ）は接続後の状態を
示す。第２図は第１実施例に使用する電気的接続部材の
一製造方法例を説明するための図であり、第２図（ａ）
は断面図、第２図（ｂ）は斜視図、第２図（Ｃ）は断面
図である。第３図は第２実施例を示し、第３図（ａ）は斜視図、第
３図（ｂ）は断面図である。第４図は第３実施例を示す
断面図である。第５図は第４実施例を示す断面図である
。第６図は第５実施例を示し、第６図（ａ）は接続前の
状態を示す断面図であり第６図（ｂ）は接続後の状態を
示す断面図である。第７図及び第８図も第５実施例を示
し、第７図（ａ）及び第８図（ａ）は斜視図てあり、第
７図（ｂ）及び第８図（ｂ）は断面図である。第９図は
第６実施例を示し、第９図（ａ）は接続前の状態を示す
斜視図であり、第９図（ｂ）は接続後の状態を示す断面
図である。第１０図は第７実施例を示す断面図であり、
第１０図（ａ）は接続前の状態を示し、第１θ図（ｂ）
は接続後の状態を示す。第１１図は第８実施例に係る電
気的接続部材を示し、第１１図（ａ）は斜視図であり、
第１１図（ｂ）は断面図である。第１２図は第９実施例
に係る電気的接続部材の一製造例を示し、第１２図（ａ
）、（ｃ）は断面図であり、第１２図（ｂ）は斜視図で
ある。第１３図から第２０図までは従来例を示し、第１
４図を除き断面図であり、第１４図は平面透視図である
。ｌ・・リードフレーム、２・・リードフレームの素子搭
載部、３・・銀ペースト、４．４′・・半導体素子、５
，５°・・半導体素子の接続部、６・φリードフレーム
の接続部、７・・極細金属線、８・・樹脂、９・・半導
体装置、ｌＯ・番手導体素子の外周縁部、１１・・リー
ドフレームの素子搭載部の外周縁部、１６Φ・キャリア
フィルム基板、１７・争キャリアフィルム基板のインナ
−リード部、２０・・樹脂、２１・・樹脂、３１・・半
田バンブ、３２Φ・基板、３３・・基板の接続部、５１
・・回路基板、５２・・回路基板の接続部、５４・・電
気的接続部材の接続部、５５・拳リードフレーム、６３
・・封止材、７０゜７０”・・金属材、７１．７１’
・・絶縁膜、７２ 、７２ ’・・絶縁膜の露出面、７
３．７３’・・金属材の露出面、７５，７５° ・・回
路基材、７６．７６° ・・回路基材の接続部、７７・
・異方性導電膜の絶縁物質、７８・・異方性導電膜、７
９・・導電粒子、８１・・エラスチックコネクタの絶縁
物質、８２・・エラスチックコネクタの金属線、８３・
・エラスチックコネクタ。１０１・参回路基板、１０２・・接続部、１０３・・絶
縁膜、１０６・・絶縁膜、１０４・・回路基板、１０５
・・接続部、１０７金属部材、１０８・Ｏ接続部、１０
９・−接続部、１１１・・保持体、１２１・・金属線、
１２２・曇絶縁物質（アルミニウム）、１２３・・樹脂
、１２４・・点線、１２５・・電気的接続部材、１２６
・・突起、１２８，１２９，１３０争・電気的接続部材
、１４０・・絶縁物質、１４２・・穴、１５０・・バン
プ。第１図（ａ）第１図（ｂ）第３図（ａ）ｂ ４第４図第５図第６図（ａ）第６図（ｂ）第８図（０）第８図（ｂ）第９図（０）第１０図（０）第１Ｑ図（ｂ）第１３図第１４図第１５図第１６図第１７図第旧図第１９図第２０図Ｑス ７５FIG. 1 is a sectional view showing a first embodiment. Figure 1(a)
shows the state before connection, and FIG. 1(b) shows the state after connection. FIG. 2 is a diagram for explaining an example of a manufacturing method of the electrical connection member used in the first embodiment, and FIG. 2(a)
is a sectional view, FIG. 2(b) is a perspective view, and FIG. 2(C) is a sectional view. FIG. 3 shows a second embodiment, with FIG. 3(a) being a perspective view and FIG. 3(b) being a sectional view. FIG. 4 is a sectional view showing the third embodiment. FIG. 5 is a sectional view showing the fourth embodiment. 6 shows a fifth embodiment, FIG. 6(a) is a sectional view showing the state before connection, and FIG. 6(b) is a sectional view showing the state after connection. 7 and 8 also show the fifth embodiment, with FIGS. 7(a) and 8(a) being perspective views, and FIGS. 7(b) and 8(b) being sectional views. It is. 9 shows a sixth embodiment, FIG. 9(a) is a perspective view showing the state before connection, and FIG. 9(b) is a sectional view showing the state after connection. FIG. 10 is a sectional view showing the seventh embodiment,
Figure 10(a) shows the state before connection, and Figure 1θ(b)
indicates the state after connection. FIG. 11 shows an electrical connection member according to the eighth embodiment, and FIG. 11(a) is a perspective view,
FIG. 11(b) is a sectional view. FIG. 12 shows an example of manufacturing an electrical connection member according to the ninth embodiment, and FIG.
) and (c) are cross-sectional views, and FIG. 12(b) is a perspective view. 13 to 20 show conventional examples, and the first
4 are cross-sectional views, and FIG. 14 is a plan perspective view. l...Lead frame, 2...Element mounting part of lead frame, 3...Silver paste, 4.4'...Semiconductor element, 5
, 5°... Connection portion of semiconductor element, 6. Connection portion of φ lead frame, 7.. Ultrafine metal wire, 8.. Resin, 9.. Semiconductor device, lO. Outer periphery of conductor element, 11.・Outer periphery of element mounting part of lead frame, 16Φ・Carrier film board, 17・Inner lead part of carrier film board, 20・Resin, 21・・Resin, 31・Solder bump, 32φ・Substrate, 33... Connection part of the board, 51
... Circuit board, 52 ... Connection part of circuit board, 54 ... Connection part of electrical connection member, 55 - Fist lead frame, 63
... Sealing material, 70°70" ... Metal material, 71.71'
...Insulating film, 72, 72'...Exposed surface of insulating film, 7
3.73'...Exposed surface of metal material, 75,75°...Circuit board, 76.76°...Connection part of circuit board, 77.
・Insulating material for anisotropic conductive film, 78...Anisotropic conductive film, 7
9. Conductive particles, 81. Insulating material of elastic connector, 82. Metal wire of elastic connector, 83.
・Elastic connector. 101. Reference circuit board, 102.. Connection portion, 103.. Insulating film, 106.. Insulating film, 104.. Circuit board, 105
・・Connection part, 107 Metal member, 108・O connection part, 10
9.-Connection part, 111.. Holder, 121.. Metal wire,
122. Cloudy insulating material (aluminum), 123.. Resin, 124.. Dotted line, 125.. Electrical connection member, 126
...Protrusion, 128, 129, 130 - Electrical connection member, 140... Insulating material, 142... Hole, 150... Bump. Figure 1 (a) Figure 1 (b) Figure 3 (a) b 4 Figure 4 Figure 5 Figure 6 (a) Figure 6 (b) Figure 8 (0) Figure 8 (b) Figure 9 (0) Figure 10 (0) Figure 1Q (b) Figure 13 Figure 14 Figure 15 Figure 16 Figure 17 Old figure 19 Figure 20 Q 75
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62079007AJPS63245874A (en) | 1987-03-31 | 1987-03-31 | Electrical connection members and electrical circuit members using the same |
| EP98102122AEP0854506A3 (en) | 1987-03-04 | 1988-03-04 | Electrically connecting member and electric circuit member |
| EP88103400AEP0284820A3 (en) | 1987-03-04 | 1988-03-04 | Electrically connecting member, and electric circuit member and electric circuit device with the connecting member |
| US08/597,383US5967804A (en) | 1987-03-04 | 1996-02-08 | Circuit member and electric circuit device with the connecting member |
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62079007AJPS63245874A (en) | 1987-03-31 | 1987-03-31 | Electrical connection members and electrical circuit members using the same |
| Publication Number | Publication Date |
|---|---|
| JPS63245874Atrue JPS63245874A (en) | 1988-10-12 |
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62079007APendingJPS63245874A (en) | 1987-03-04 | 1987-03-31 | Electrical connection members and electrical circuit members using the same |
| Country | Link |
|---|---|
| JP (1) | JPS63245874A (en) |
| Publication | Publication Date | Title |
|---|---|---|
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