第1図は本考案の一実施例の刷子摩耗センサー
を設けた電動機の要部破断図、第2図aは同刷子
摩耗センサーにおける刷子の正面図、第2図bは
同刷子の側面図、第3図は従来の電動機の要部破
断図である。  3……刷子、3a……突起部、4……刷子バネ
、5……整流子、8……ヒンジレバー、9……マ
イクロスイツチ、9a……スイツチボタン、12
……発光ダイオード、13……刷子摩耗通知手段
。  Fig. 1 is a cutaway view of the main parts of an electric motor equipped with a brush wear sensor according to an embodiment of the present invention, Fig. 2a is a front view of the brush in the brush wear sensor, and Fig. 2b is a side view of the brush. FIG. 3 is a cutaway view of the main parts of a conventional electric motor. 3...Brush, 3a...Protrusion, 4...Brush spring, 5...Commutator, 8...Hinge lever, 9...Micro switch, 9a...Switch button, 12
 ... Light emitting diode, 13 ... Brush wear notification means.
| Application Number | Priority Date | Filing Date | Title | 
|---|---|---|---|
| JP8689287UJPS63198365U (en) | 1987-06-04 | 1987-06-04 | 
| Application Number | Priority Date | Filing Date | Title | 
|---|---|---|---|
| JP8689287UJPS63198365U (en) | 1987-06-04 | 1987-06-04 | 
| Publication Number | Publication Date | 
|---|---|
| JPS63198365Utrue JPS63198365U (en) | 1988-12-21 | 
| Application Number | Title | Priority Date | Filing Date | 
|---|---|---|---|
| JP8689287UPendingJPS63198365U (en) | 1987-06-04 | 1987-06-04 | 
| Country | Link | 
|---|---|
| JP (1) | JPS63198365U (en) | 
| Publication number | Priority date | Publication date | Assignee | Title | 
|---|---|---|---|---|
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