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JPS63198365U - - Google Patents

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Publication number
JPS63198365U
JPS63198365UJP8689287UJP8689287UJPS63198365UJP S63198365 UJPS63198365 UJP S63198365UJP 8689287 UJP8689287 UJP 8689287UJP 8689287 UJP8689287 UJP 8689287UJP S63198365 UJPS63198365 UJP S63198365U
Authority
JP
Japan
Prior art keywords
brush
electric motor
commutator
protrusion
switch
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8689287U
Other languages
Japanese (ja)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filedfiledCritical
Priority to JP8689287UpriorityCriticalpatent/JPS63198365U/ja
Publication of JPS63198365UpublicationCriticalpatent/JPS63198365U/ja
Pendinglegal-statusCriticalCurrent

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Description

Translated fromJapanese
【図面の簡単な説明】[Brief explanation of the drawing]

第1図は本考案の一実施例の刷子摩耗センサー
を設けた電動機の要部破断図、第2図aは同刷子
摩耗センサーにおける刷子の正面図、第2図bは
同刷子の側面図、第3図は従来の電動機の要部破
断図である。 3……刷子、3a……突起部、4……刷子バネ
、5……整流子、8……ヒンジレバー、9……マ
イクロスイツチ、9a……スイツチボタン、12
……発光ダイオード、13……刷子摩耗通知手段
Fig. 1 is a cutaway view of the main parts of an electric motor equipped with a brush wear sensor according to an embodiment of the present invention, Fig. 2a is a front view of the brush in the brush wear sensor, and Fig. 2b is a side view of the brush. FIG. 3 is a cutaway view of the main parts of a conventional electric motor. 3...Brush, 3a...Protrusion, 4...Brush spring, 5...Commutator, 8...Hinge lever, 9...Micro switch, 9a...Switch button, 12
... Light emitting diode, 13 ... Brush wear notification means.

Claims (1)

Translated fromJapanese
【実用新案登録請求の範囲】[Scope of utility model registration request] 電動機の整流子方向に付勢され、一端が整流子
と摺接する刷子と、前記刷子の他端付近の側面に
設けた突起部と、前記刷子が摩耗した際に、前記
突起部によつてスイツチボタンが押圧されるよう
にヒンジレバーを配設したマイクロスイツチと、
前記マイクロスイツチと接続された刷子摩耗通知
手段とを備えた電動機の刷子摩耗センサー。
A brush that is biased in the direction of the commutator of the electric motor and has one end in sliding contact with the commutator, a protrusion provided on the side surface near the other end of the brush, and a switch that is activated by the protrusion when the brush wears out. A micro switch with a hinge lever so that the button can be pressed,
A brush wear sensor for an electric motor, comprising a brush wear notification means connected to the microswitch.
JP8689287U1987-06-041987-06-04PendingJPS63198365U (en)

Priority Applications (1)

Application NumberPriority DateFiling DateTitle
JP8689287UJPS63198365U (en)1987-06-041987-06-04

Applications Claiming Priority (1)

Application NumberPriority DateFiling DateTitle
JP8689287UJPS63198365U (en)1987-06-041987-06-04

Publications (1)

Publication NumberPublication Date
JPS63198365Utrue JPS63198365U (en)1988-12-21

Family

ID=30943618

Family Applications (1)

Application NumberTitlePriority DateFiling Date
JP8689287UPendingJPS63198365U (en)1987-06-041987-06-04

Country Status (1)

CountryLink
JP (1)JPS63198365U (en)

Cited By (16)

* Cited by examiner, † Cited by third party
Publication numberPriority datePublication dateAssigneeTitle
US6855992B2 (en)2001-07-242005-02-15Motorola Inc.Structure and method for fabricating configurable transistor devices utilizing the formation of a compliant substrate for materials used to form the same
US6885065B2 (en)2002-11-202005-04-26Freescale Semiconductor, Inc.Ferromagnetic semiconductor structure and method for forming the same
US6916717B2 (en)2002-05-032005-07-12Motorola, Inc.Method for growing a monocrystalline oxide layer and for fabricating a semiconductor device on a monocrystalline substrate
US6965128B2 (en)2003-02-032005-11-15Freescale Semiconductor, Inc.Structure and method for fabricating semiconductor microresonator devices
US6992321B2 (en)2001-07-132006-01-31Motorola, Inc.Structure and method for fabricating semiconductor structures and devices utilizing piezoelectric materials
US7005717B2 (en)2000-05-312006-02-28Freescale Semiconductor, Inc.Semiconductor device and method
US7019332B2 (en)2001-07-202006-03-28Freescale Semiconductor, Inc.Fabrication of a wavelength locker within a semiconductor structure
US7020374B2 (en)2003-02-032006-03-28Freescale Semiconductor, Inc.Optical waveguide structure and method for fabricating the same
US7045815B2 (en)2001-04-022006-05-16Freescale Semiconductor, Inc.Semiconductor structure exhibiting reduced leakage current and method of fabricating same
US7067856B2 (en)2000-02-102006-06-27Freescale Semiconductor, Inc.Semiconductor structure, semiconductor device, communicating device, integrated circuit, and process for fabricating the same
US7105866B2 (en)2000-07-242006-09-12Freescale Semiconductor, Inc.Heterojunction tunneling diodes and process for fabricating same
US7161227B2 (en)2001-08-142007-01-09Motorola, Inc.Structure and method for fabricating semiconductor structures and devices for detecting an object
US7169619B2 (en)2002-11-192007-01-30Freescale Semiconductor, Inc.Method for fabricating semiconductor structures on vicinal substrates using a low temperature, low pressure, alkaline earth metal-rich process
US7211852B2 (en)2001-01-192007-05-01Freescale Semiconductor, Inc.Structure and method for fabricating GaN devices utilizing the formation of a compliant substrate
US7342276B2 (en)2001-10-172008-03-11Freescale Semiconductor, Inc.Method and apparatus utilizing monocrystalline insulator
JP2020174437A (en)*2019-04-082020-10-22中国電力株式会社Brush burnout prevention device

Cited By (16)

* Cited by examiner, † Cited by third party
Publication numberPriority datePublication dateAssigneeTitle
US7067856B2 (en)2000-02-102006-06-27Freescale Semiconductor, Inc.Semiconductor structure, semiconductor device, communicating device, integrated circuit, and process for fabricating the same
US7005717B2 (en)2000-05-312006-02-28Freescale Semiconductor, Inc.Semiconductor device and method
US7105866B2 (en)2000-07-242006-09-12Freescale Semiconductor, Inc.Heterojunction tunneling diodes and process for fabricating same
US7211852B2 (en)2001-01-192007-05-01Freescale Semiconductor, Inc.Structure and method for fabricating GaN devices utilizing the formation of a compliant substrate
US7045815B2 (en)2001-04-022006-05-16Freescale Semiconductor, Inc.Semiconductor structure exhibiting reduced leakage current and method of fabricating same
US6992321B2 (en)2001-07-132006-01-31Motorola, Inc.Structure and method for fabricating semiconductor structures and devices utilizing piezoelectric materials
US7019332B2 (en)2001-07-202006-03-28Freescale Semiconductor, Inc.Fabrication of a wavelength locker within a semiconductor structure
US6855992B2 (en)2001-07-242005-02-15Motorola Inc.Structure and method for fabricating configurable transistor devices utilizing the formation of a compliant substrate for materials used to form the same
US7161227B2 (en)2001-08-142007-01-09Motorola, Inc.Structure and method for fabricating semiconductor structures and devices for detecting an object
US7342276B2 (en)2001-10-172008-03-11Freescale Semiconductor, Inc.Method and apparatus utilizing monocrystalline insulator
US6916717B2 (en)2002-05-032005-07-12Motorola, Inc.Method for growing a monocrystalline oxide layer and for fabricating a semiconductor device on a monocrystalline substrate
US7169619B2 (en)2002-11-192007-01-30Freescale Semiconductor, Inc.Method for fabricating semiconductor structures on vicinal substrates using a low temperature, low pressure, alkaline earth metal-rich process
US6885065B2 (en)2002-11-202005-04-26Freescale Semiconductor, Inc.Ferromagnetic semiconductor structure and method for forming the same
US7020374B2 (en)2003-02-032006-03-28Freescale Semiconductor, Inc.Optical waveguide structure and method for fabricating the same
US6965128B2 (en)2003-02-032005-11-15Freescale Semiconductor, Inc.Structure and method for fabricating semiconductor microresonator devices
JP2020174437A (en)*2019-04-082020-10-22中国電力株式会社Brush burnout prevention device

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