【発明の詳細な説明】〔産業上の利用分野〕本発明は半導体ウェハ表面に気相成長層を形成する装置
に係り、特に気相成長層を多数の半導体ウェハ表面上に
均一に形成するための気相成長装置に関する。[Detailed Description of the Invention] [Industrial Application Field] The present invention relates to an apparatus for forming a vapor phase growth layer on the surface of a semiconductor wafer, and particularly for forming a vapor phase growth layer uniformly on the surface of a large number of semiconductor wafers. The present invention relates to a vapor phase growth apparatus.
半導体製造プロセスにおいては、半導体ウェハ上に気相
化学反応を利用してＳｉＯ２膜、窒化膜（ＳｉａＮ４）
、多結晶シリコン膜、単結晶シリコン膜などを形成する
ＣＶＤ （Ｃｈｅｍｉｃａｌ ＶａｐｏｒＤｅｐｏｓｉ
ｔｉｏｎ）技術が広く適用されている。このうち、単結
晶シリコン膜形成は特にエピタキシャル成長と呼ばれる
。In the semiconductor manufacturing process, SiO2 films and nitride films (SiaN4) are deposited on semiconductor wafers using vapor phase chemical reactions.
CVD (Chemical Vapor Deposit) to form polycrystalline silicon films, single crystal silicon films, etc.
tion) technology is widely applied. Among these, single crystal silicon film formation is particularly called epitaxial growth.
近年、プロセスコストの低減や製品歩留りの向上を目的
とした半導体ウェハの大口径化が進められており、現在
では直径１２５〜１５０ｍｍのウェハが主流となりつつ
ある。In recent years, the diameter of semiconductor wafers has been increasing in order to reduce process costs and improve product yields, and wafers with a diameter of 125 to 150 mm are now becoming mainstream.
一方、プロセスコストの低減のため、各種装置において
、一度に処理できるウェハの枚数、すなわちバッチ処理
を行う際のチャージ枚数の増大も進められている。On the other hand, in order to reduce process costs, efforts are being made to increase the number of wafers that can be processed at one time in various apparatuses, that is, the number of wafers that can be charged when performing batch processing.
ＣＶＤ装置においてもウェハの大口径化や大量処理化が
進められているが、一方、デバイスの高集積化や高速化
に伴い、形成する薄膜の高精度の均一性も合わせて要求
されている。In CVD apparatuses as well, wafer diameters are becoming larger and wafers are being processed in larger quantities. On the other hand, as devices become more highly integrated and operate at higher speeds, highly accurate uniformity of the thin films formed is also required.
以上の要求に応えるＣＶＤ装置として特開昭５９−５９
８７８号公報に示されるような装置が提案されている。JP-A-59-59 as a CVD device that meets the above requirements.
A device as shown in Japanese Patent No. 878 has been proposed.
この方法は、ウェハをその面を垂直として等間隔に並べ
反応容器内に収納し１反応容器外に設置し容器全体を実
質的に囲繞する加熱手段により前述ウェハを均一に加熱
し、反応ガスを導管により前述反応容器内に導きウェハ
上方よりノズルによって各ウェハそれぞれに均一に供給
し。In this method, the wafers are arranged with their surfaces perpendicular and arranged at equal intervals and housed in a reaction vessel, and the wafers are uniformly heated by a heating means installed outside the reaction vessel and substantially surrounding the entire vessel, and the reaction gas is heated. It is introduced into the reaction vessel through a conduit and uniformly supplied to each wafer from above the wafer through a nozzle.
ウェハ下方に設けた排気口より廃ガスを排出する方法で
一度に大量のウェハに均一なＣＶＤ薄膜の形成を目的と
している。The purpose of this method is to form a uniform CVD thin film on a large number of wafers at once by discharging waste gas from an exhaust port provided below the wafer.
上記従来の気相成長装置においては、より高精度な膜厚
の均一性の要求に対しては、大口径ウェハの面内膜厚分
布の十分な均一性を得難い欠点がある。The above-mentioned conventional vapor phase growth apparatus has the drawback that it is difficult to obtain sufficient uniformity in the in-plane film thickness distribution of a large diameter wafer in response to the demand for more precise film thickness uniformity.
本発明の目的は、大口径ウェハに対しても均一な膜厚分
布をもった薄膜を形成できる気相成長装置を提供するこ
とにあ′る。An object of the present invention is to provide a vapor phase growth apparatus that can form a thin film with a uniform thickness distribution even on large diameter wafers.
上記目的は、原料ガス供給ノズルからウェハ面に供給す
る原料ガス流の数を複数にし、かつウェハの中心方向へ
供給する原料ガス量よりもウェハの周辺部へ供給する原
料ガス量を多くすることにより達成される。The above purpose is to increase the number of raw material gas flows supplied from the raw material gas supply nozzle to the wafer surface, and to increase the amount of raw material gas supplied to the periphery of the wafer than the amount of raw material gas supplied toward the center of the wafer. This is achieved by
具体的には、例えば、原料ガス供給ノズルに設けられた
複数のガス噴射孔又はガス噴射スリットのうち、ウェハ
周辺部に向って原料ガスを噴射するものの数を、ウェハ
中心方向に向って原料ガスを噴射するｉれよりも多くし
たり、ウェハ周辺部に向って原料ガスを噴射するガス噴
孔の大きさ又はガス噴射スリットの幅を、ウェハ中心方
向に向って原料ガスを噴射するそれの大きさや幅よりも
大きくすることにより実現できる。Specifically, for example, among the plurality of gas injection holes or gas injection slits provided in the source gas supply nozzle, the number of gas injection holes or gas injection slits that inject source gas toward the wafer periphery is increased by the number of gas injection holes or gas injection slits that inject source gas toward the wafer center. The size of the gas injection hole or the width of the gas injection slit that injects the source gas toward the wafer periphery may be increased to the size that injects the source gas toward the center of the wafer. This can be achieved by making it larger than the pod width.
また、個別にガス流量やガス噴射孔（又はスリット幅）
を調整された各々が独立の複数の原料ガス供給ノズルを
炉内の必要最適箇所に設けて同上趣旨の原料ガスの供給
がなされる様にしてもよい。In addition, the gas flow rate and gas injection hole (or slit width) can be determined individually.
A plurality of independently adjusted raw material gas supply nozzles may be provided at optimal locations in the furnace to supply the raw material gas as described above.
ガス供給ノズルから常に原料ガスが供給されているウェ
ハ中心部に対して、ウェハの回転により間欠的な供給し
か受けていないウェハ周辺部に。The center of the wafer is constantly supplied with raw material gas from the gas supply nozzle, while the periphery of the wafer receives only intermittent supply due to the rotation of the wafer.
中心部よりも多量の原料ガスを供給することにより、ウ
ェハ周辺部に原料ガスが間欠的に供給された際の成長量
を大きくできるので、中心部と周辺部の膜厚をほぼ同じ
にすることができ、均一な膜厚分布が得られる。By supplying a larger amount of source gas than the center, the amount of growth can be increased when source gas is intermittently supplied to the periphery of the wafer, so the film thicknesses at the center and periphery can be made approximately the same. A uniform film thickness distribution can be obtained.
以下本発明をＳｉのエピタキシャル成長を例として第１
図、第２図に従って詳細に説明する。The present invention will be explained below using Si epitaxial growth as an example.
This will be explained in detail with reference to FIGS.
直径１５０ｍの大口径ウェハ１を第１図に示すように、
ホルダ２に相互に隔離した積層状態で多段にチャージし
、ホルダ２を回転することによりウェハ１の中心のまわ
りに自転させる。ベルジャ３内をＨ２ガス雰囲気とした
後、サセプタ４を高周波コイル５により１１００℃まで
昇温する。As shown in FIG. 1, a large diameter wafer 1 with a diameter of 150 m is
The holder 2 is charged in multiple stages in a stacked state separated from each other, and the holder 2 is rotated to rotate around the center of the wafer 1. After creating an H2 gas atmosphere inside the bell jar 3, the temperature of the susceptor 4 is raised to 1100° C. by the high frequency coil 5.
ガス供給ノズル６より８１原料ガスを含むＨ２ガスを供
給し、Ｓｉニピタキシャル層を各ウェハ１の表面上に形
成する。この時、Ｓｉ原料ガスを含むＨ２ガスを、第２
図に示すようにウェハ面に実質上平行に複数個流し、か
つウェハの中ｊＱ”方向へ供給する原料ガス量よりもウ
ェハ周辺部へ供給する原料ガス量を多くする。H2 gas containing 81 source gases is supplied from the gas supply nozzle 6 to form a Si nipitaxial layer on the surface of each wafer 1. At this time, the H2 gas containing the Si raw material gas is
As shown in the figure, a plurality of raw material gases are flowed substantially parallel to the wafer surface, and the amount of raw material gas supplied to the periphery of the wafer is larger than the amount of raw material gas supplied to the inside of the wafer in the jQ'' direction.
エピタキシャル成長に使用された後の廃ガスは。The waste gas after being used for epitaxial growth.
排気ノズル７によりベンジャ３外に排気する。The exhaust nozzle 7 exhausts the air outside the venter 3.
所望の膜厚のエピタキシャル層がウェハ１の表面に形成
された後、ガス供給ノズル６からのＳｉ原料ガスの供給
を止め、Ｎ２ガスによりパージングの後、高周波コイル
５による加熱を止め、サセプタ４を降温する。After an epitaxial layer with a desired thickness is formed on the surface of the wafer 1, the supply of Si raw material gas from the gas supply nozzle 6 is stopped, and after purging with N2 gas, heating by the high frequency coil 5 is stopped, and the susceptor 4 is The temperature drops.
以上の装置によれば、大口径ウェハに形成するエピタキ
シャル層の膜厚を均一とすることができる。According to the above apparatus, the thickness of the epitaxial layer formed on a large-diameter wafer can be made uniform.
次に具体的数値例について説明する。まず、ホルダ２に
直径１２５ｍｍのウェハ１を２枚ずつ背中合せにし、相
互間に１０ｍｍの間隔をおいて２５段、計５０枚をセッ
トし、ベルジャ３内にチャージする。ウェハホルダ２を
２５ｒｐｍで回転しながら、ベルジャ３内にガス供給ノ
ズル６よりＮｚガスを供給し、炉内の空気を置換する６ガス供給ノズル６には、多段にＶＣ層したウェハの各面
にガスを供給できるように、ガス噴射孔６ｏが５個一組
で上下方向に１０ｍの間隔で、ウェハ積層数よりも１組
多く５個×２６組、計１３０個設けられている。ガス噴
射孔６０の大きさは。Next, specific numerical examples will be explained. First, two wafers 1 each having a diameter of 125 mm are placed back to back on the holder 2, and a total of 50 wafers are set in 25 stages with an interval of 10 mm between them, and charged into the bell jar 3. While rotating the wafer holder 2 at 25 rpm, Nz gas is supplied into the bell jar 3 from the gas supply nozzle 6 to replace the air in the furnace. In order to supply the gas, gas injection holes 6o are provided in sets of five gas injection holes 6o at intervals of 10 m in the vertical direction, one more set than the number of stacked wafers, 5 x 26 sets, 130 in total. What is the size of the gas injection hole 60?
第２図に示すように、ウェハ中心方向に向うものは直径
２ｍ、ウェハ中心を通る方向から約１５゜（θｌ二１５
°）だけずらした方向に向うものは直径５ｎｏ、約３０
’ （θｚ二３０’）だけずらした方向に向うものは
直径７ｍである。As shown in FIG.
The one facing the direction shifted by °) has a diameter of 5no, about 30mm.
The one facing in the direction shifted by (θz230') has a diameter of 7 m.
Ｎ２ガスを止め、Ｎ２ガスを３０ Ｑ ／ｍｉｎの流量
で流しながら、高周波コイル５に通電し、サセプタ４を
１１００℃に加熱する６サセプタ４が所定温度に達したら、Ｎ２ガス中に０ 、
５ ｍｏ ９％のＨＣＱガス１混入し、ウェハ表面を１
分Ｗ’Ａ、相エッチ１．．てりｌ−；ングする。ごの時
、ガス供給、ノズル６か以のガス供給量がウェハ周辺部
はど多く汐れろので、均一なエツチングも合せて達成さ
れろ。Stop the N2 gas, and while flowing N2 gas at a flow rate of 30 Q/min, energize the high-frequency coil 5 and heat the susceptor 4 to 1100°C. 6 When the susceptor 4 reaches a predetermined temperature, add zero,
5 mo 9% HCQ gas is mixed and the wafer surface is
Min W'A, phase etch 1. ．． To start. At this time, the amount of gas supplied from the nozzle 6 and above should be reduced to a large extent around the wafer, so uniform etching must also be achieved.
ＨＣＱガスを止め、２分−のガスページを行また後、
Ｈｚ中にＳ ｉ ＣＱ ４を１．５ｍｏＱ％混入し。After stopping the HCQ gas and running the gas page for 2 minutes,
1.5 moQ% of S i CQ 4 was mixed in Hz.
エピタキシャル成長を開始する。２０分間の成長で１０
μｍのエピタキシャル層を形成した後。Start epitaxial growth. 10 in 20 minutes of growth
After forming an epitaxial layer of μm.
５ｉＣＱａの混入を止め、Ｎｚガスで２分間原料ガスの
パージをする。Stop mixing 5iCQa, and purge the source gas with Nz gas for 2 minutes.
高周波コイル５の通電を徐々に下げ、約１５分で４００
℃までサセプタ４を降温した後電源を切る。１５分間の
Ｎ２ガスの冷却の後、炉内をＮ２ガスで置換し、ベルジ
ャ３を開はウェハ１を取り出す。Gradually reduce the energization of the high frequency coil 5 to 400 in about 15 minutes.
After cooling the susceptor 4 to ℃, the power is turned off. After cooling with N2 gas for 15 minutes, the inside of the furnace is replaced with N2 gas, the bell jar 3 is opened, and the wafer 1 is taken out.
以上の実験例によれば直径１２５ｍｍのウェハに形成す
るエピタキシャル層の膜厚分布を均一にすることができ
る。According to the above experimental example, the thickness distribution of the epitaxial layer formed on a wafer with a diameter of 125 mm can be made uniform.
本実施例ではシリコンのエピタキシャル成長を例とした
が、ウェハ中心を回転中心としウェハ面に平行にガスを
供給しながら薄膜を形成する他のＣＶＤ法にも適用可能
である。また、ウェハを多段積層とし実施例を説明した
が、１枚のウェハの場合にも適用できる。さらに、原料
ガスを噴射する噴射孔は孔ではなく垂直方向のスリット
であっても良いことはもちろんである。In this embodiment, epitaxial growth of silicon is taken as an example, but it is also applicable to other CVD methods in which a thin film is formed by rotating around the wafer center and supplying gas parallel to the wafer surface. Furthermore, although the embodiment has been described with the wafers stacked in multiple stages, the present invention can also be applied to the case of a single wafer. Furthermore, it goes without saying that the injection hole through which the source gas is injected may be a vertical slit instead of a hole.
なお、ガス噴射方向のずれ角θ（θ＝０１゜θ２．・・
・・・・）及びガス噴射孔の大きさあるいはスリットの
幅は、ウェハ回転速度、ガス流量、噴射速度などによっ
て補正する必要があり、この補正 −量は実験的に
求められる。Note that the deviation angle θ in the gas injection direction (θ=01°θ2...
...) and the size of the gas injection hole or the width of the slit must be corrected based on the wafer rotation speed, gas flow rate, injection speed, etc., and the amount of correction is determined experimentally.
また、別な実施例として、第３図〜第５図に示すように
個別のガス流量（または濃度）やガス噴射孔（またはス
リット幅）をｙ４整された各々が独その複数の原料ガス
供給ノズル６Ａ〜６Ｅを炉内に設けてもよい。In addition, as another example, as shown in FIGS. 3 to 5, each of the individual gas flow rates (or concentrations) and gas injection holes (or slit widths) arranged y4 can be used to supply a plurality of raw material gases. The nozzles 6A to 6E may be provided inside the furnace.
本発明によれば、気相成長層のウェハ内の膜厚のばらつ
きを、これまでの回転ウェハの中心方向に供給する場合
に比べ１／４以下とすることができ均一な薄膜をウェハ
表面に形成することが可能となる。According to the present invention, the variation in the thickness of the vapor-phase grown layer within the wafer can be reduced to 1/4 or less compared to the conventional case of supplying the vapor-phase growth layer toward the center of the rotating wafer, and a uniform thin film can be formed on the wafer surface. It becomes possible to form.
第１図は本発明気相成長装置の一実施例を示す概略断面
図、第２図は本発明の詳細な説明する第１図の要部断面
図、第３図〜第５図は本発明の他の実施例を示す要部断
面図である。１・・・ウェハ、２・・・ウェハホルダ、３・・・ベル
ジャ、４・・・サセプタ、５・・・加熱コイル、６・・
ガス供給ノ高１ｚ筋２図帛３図、、、’躬Ｓ図らΔ、Ｐ躬４−日１− 本斗限つニへＩＣ−−〜つ二へ日斡中ＬＳＡ−一一〇−人供Ｙ≧ノ人ＩしＥ１−ｔ“作戦 ノンζご１しFIG. 1 is a schematic sectional view showing one embodiment of the vapor phase growth apparatus of the present invention, FIG. 2 is a sectional view of the main part of FIG. 1 explaining the present invention in detail, and FIGS. FIG. 7 is a sectional view of a main part showing another embodiment of the invention. DESCRIPTION OF SYMBOLS 1... Wafer, 2... Wafer holder, 3... Belljar, 4... Susceptor, 5... Heating coil, 6...
Gas supply height 1z Line 2 Diagram 3,,,' Tsuji S diagram et al. Person Y≧No person IshiE 1-t”strategy non-ζgo1shi
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10662886AJPS62263629A (en) | 1986-05-12 | 1986-05-12 | Vapor phase growth equipment |
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10662886AJPS62263629A (en) | 1986-05-12 | 1986-05-12 | Vapor phase growth equipment |
| Publication Number | Publication Date |
|---|---|
| JPS62263629Atrue JPS62263629A (en) | 1987-11-16 |
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10662886APendingJPS62263629A (en) | 1986-05-12 | 1986-05-12 | Vapor phase growth equipment |
| Country | Link |
|---|---|
| JP (1) | JPS62263629A (en) |
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