【発明の詳細な説明】〔発明の利用分野〕本発明は気相成長式の化学的蒸着装置（以下ＣＶＤ装置
と言う）に係り、詳しくは、同心円筒状に構成した直立
円筒状の外炉壁と、直立円筒状の内炉壁との間に輪状の
サセプタを設け、かつ、前記外炉壁の上端を円錐筒状の
ベルジャで覆うとともに前記内炉壁の上端に円錐状のバ
ッファを設け、前記円錐筒状ベルジャの頂部から反応ガ
スを送入してサセプタ上のウェハに接触流動せしめる構
造のＣＶＤ装置に関するものである。[Detailed Description of the Invention] [Field of Application of the Invention] The present invention relates to a vapor phase growth type chemical vapor deposition apparatus (hereinafter referred to as a CVD apparatus). A ring-shaped susceptor is provided between the wall and an upright cylindrical inner furnace wall, and the upper end of the outer furnace wall is covered with a conical bell jar, and a conical buffer is provided at the upper end of the inner furnace wall. The present invention relates to a CVD apparatus having a structure in which a reaction gas is introduced from the top of the conical cylindrical belljar to flow in contact with a wafer on a susceptor.
第２図はこの種の従来形ＣＶＤ装置に一例の垂直断面図
である。FIG. 2 is a vertical sectional view of an example of this type of conventional CVD apparatus.
直立円筒状の外炉壁１と、直立円筒状の内炉壁２とは同
心状に設置されている。An upright cylindrical outer furnace wall 1 and an upright cylindrical inner furnace wall 2 are installed concentrically.
上記の内、外炉壁２，１の間に輪状のサセプタ３が、ベ
アリング４によって回転可能に支承されてターンテーブ
ルを構成している。Among the above, a ring-shaped susceptor 3 is rotatably supported by a bearing 4 between the outer furnace walls 2 and 1 to constitute a turntable.
前記の外炉壁１の上端部は円錐筒状のベルジャ５で覆わ
れている。また前記の内炉壁２の上端にバッファ６が設
置されている。The upper end of the outer furnace wall 1 is covered with a conical bell jar 5. Further, a buffer 6 is installed at the upper end of the inner furnace wall 2.
前記のベルジャ５の頂部にノズル７が設けられ。A nozzle 7 is provided at the top of the bell jar 5.
反応ガス８，８′が送入される。Reaction gases 8, 8' are introduced.
送入された反応−ガスは、ベルジャ５とバッファ６との
間を矢印ａ、ｂの如く流動し、サセプタ３の上に置かれ
た半導体ウェハ９に触れる。The introduced reaction gas flows between the bell jar 5 and the buffer 6 as shown by arrows a and b, and touches the semiconductor wafer 9 placed on the susceptor 3.
半導体ウェハ９に接触しつつ流動した反応ガスは熱分解
によってＳｉｎ、を析出し、該半導体ウェハ９の表面に
Ｓｉｎ、の薄膜を形成する。The reaction gas flowing while in contact with the semiconductor wafer 9 precipitates Sin by thermal decomposition, forming a thin film of Sin on the surface of the semiconductor wafer 9.
矢印すの如く半導体ウェハ９の上を流動した反応ガスは
矢印Ｃの如く外炉壁１の内面に沿って下方に流動し、該
外炉壁１の下方に設けられたダクト１０から排気１１さ
れる。The reaction gas that has flowed over the semiconductor wafer 9 as shown by the arrow C flows downward along the inner surface of the outer furnace wall 1 as shown by the arrow C, and is exhausted from the duct 10 provided below the outer furnace wall 1. Ru.
以上のように構成された従来のＣＶＤ装置（第２図）に
おいては、ウェハ９に対して反応ガス流失印すがほぼ一
定方向に流動接触して外炉壁１の内面に向けて流れる。In the conventional CVD apparatus (FIG. 2) configured as described above, the reaction gas does not flow with respect to the wafer 9, but flows in contact with the wafer 9 in a substantially constant direction and flows toward the inner surface of the outer furnace wall 1.
このため、半導体ウェハ９の表面の内、外炉壁１に近い
部分と内炉壁２に近い部分とでは反応ガス流の分布が不
均一になり、成膜状態も不均一になる。Therefore, on the surface of the semiconductor wafer 9, the distribution of the reaction gas flow becomes non-uniform in a portion close to the outer furnace wall 1 and the portion near the inner furnace wall 2, and the state of film formation also becomes non-uniform.
〔発明の目的〕本発明は上述の事情に鑑みて為されたもので、半導体ウ
ェハの表面に接触流動する反応ガス流の分布を均一なら
しめるように改良したＣＶＤ装置を提供しようとするも
のである。[Object of the Invention] The present invention has been made in view of the above-mentioned circumstances, and it is an object of the present invention to provide a CVD apparatus that is improved so as to uniformize the distribution of a reactant gas flow that flows in contact with the surface of a semiconductor wafer. be.
上記の目的を達成するため、本発明のＣＶＤ装置は、同
心円筒状に構成した直立円筒状の外炉壁と、直立円筒状
の内炉壁との間に輪状のサセプタを設け、かつ、前記外
炉壁の上端を円錐筒状のベルジャで覆うとともに前記内
炉壁の上端に円錐状のバッファを設け、前記円錐筒状ベ
ルジャの頂部から反応ガスを送入してサセプタ上のウェ
ハに接触流動せしめる構造のＣＶＤ装置において、前記
の外炉壁および内炉壁にそれぞれ反応ガスの排気口を設
けたことを特徴とする。In order to achieve the above object, the CVD apparatus of the present invention includes a ring-shaped susceptor provided between an upright cylindrical outer furnace wall configured in a concentric cylindrical shape and an upright cylindrical inner furnace wall, and The upper end of the outer furnace wall is covered with a conical cylindrical belljar, and a conical buffer is provided on the upper end of the inner furnace wall, and the reaction gas is introduced from the top of the conical cylindrical belljar to flow in contact with the wafer on the susceptor. The CVD apparatus is characterized in that the outer furnace wall and the inner furnace wall are provided with reaction gas exhaust ports, respectively.
次に、本発明の一実施例について、第１図を参照しつつ
説明する。Next, one embodiment of the present invention will be described with reference to FIG.
この実施例のＣＶＤ装置は、第２図に示した従来形のＣ
ＶＤ装置に本発明を適用して改良したもので、第２図と
同一の図面参照番号を付した外炉壁↓、内炉壁２．サセ
プタ３．ベアリング４．ベルジャ５．バッファ６、ノズ
ル７は従来形のＣＶＤ装置におけると同様、乃至は類似
の構成部材である。The CVD apparatus of this embodiment is similar to the conventional CVD apparatus shown in FIG.
This is an improved VD device by applying the present invention, and the outer furnace wall ↓ and inner furnace wall 2. Susceptor 3. Bearing 4. Bellja 5. The buffer 6 and nozzle 7 are the same or similar components as in a conventional CVD apparatus.
外炉壁１の下方には従来装置と同様にダクト１０を設け
、ダンパ１２ａを介して排気１１するように構成する。A duct 10 is provided below the outer furnace wall 1 in the same way as in the conventional apparatus, and is configured to exhaust air 11 via a damper 12a.
Ｐは圧力計である。P is a pressure gauge.
更に、内炉壁２にもダクト１０′を設けて反応ガスの排
気口を構成し、ダンパ１２ｂを介して排気１１するよう
に構成する。Furthermore, a duct 10' is also provided on the inner furnace wall 2 to constitute an exhaust port for the reaction gas, and the exhaust 11 is configured to be discharged via a damper 12b.
以上のように構成した本実施例のＣＶＤ装置においては
、矢印ａの如く流動した反応ガスはウェハ９の近傍で矢
印ｂ′、矢印ｄの如く分流する。In the CVD apparatus of this embodiment configured as described above, the reaction gas flowing as shown by the arrow a is divided in the vicinity of the wafer 9 as shown by the arrows b' and d.
分流した反応ガス流矢印ｂ′は矢印Ｃ′の如く外炉壁１
に設けたダクト１０から排気され、一方、分流した反応
ガス流矢印ｄは矢印ｅの如く内炉壁２に設けたダクトｌ
Ｏ′から排気される。The divided reaction gas flow arrow b' is directed to the outer furnace wall 1 as shown by arrow C'.
On the other hand, the branched reaction gas flow arrow d flows through a duct l provided in the inner furnace wall 2 as shown by arrow e.
It is exhausted from O'.
前記の分流した反応ガス流ｂ′と同ｄとの流量比は、ダ
ンパ１２ａ、同１２ｂの開閉調節によって自在に制御で
きる。The flow rate ratio between the divided reaction gas flows b' and d can be freely controlled by opening and closing the dampers 12a and 12b.
本実施例の装置を使用する際は前記のダンパ１２ａ、同
１２ｂの開度を調節し、半導体ウェハ９の表面に接触流
動する反応ガス流ｂ′と同ｄどの分布状態を均一ならし
める。これにより半導体ウェハ９表面の成膜スピードが
均一となり、一様な厚さの蒸着膜が得られる。When using the apparatus of this embodiment, the opening degrees of the dampers 12a and 12b are adjusted to uniformize the distribution of the reactant gas flows b' and d flowing in contact with the surface of the semiconductor wafer 9. This makes the film formation speed on the surface of the semiconductor wafer 9 uniform, and a deposited film of uniform thickness can be obtained.
以上詳述したように、本発明の装置によれば、半導体ウ
ェハの表面における反応ガス流の分布を均一ならしめ得
るという優れた実用的効果を奏する。。As described above in detail, the apparatus of the present invention has an excellent practical effect of making the distribution of the reaction gas flow uniform on the surface of the semiconductor wafer. .
第１図は本発明のＣＶＤ装置の一実施例の模式的な垂直
断面図、第２図は従来のＣＶＤ装置の模式的な垂直断面
図である。１・・・外炉壁、２・・・内炉壁、３・・・サセプタ、
５・・・ベルジャ、６・・・バッファ、７・・・ノズル
、８，８′・・・反応ガス、９・・・半導体ウェハ、１
０．１０’・・・ダクト、１１・・・排気、１２ａ、
１２ｂ・・・ダンパ。FIG. 1 is a schematic vertical sectional view of an embodiment of the CVD apparatus of the present invention, and FIG. 2 is a schematic vertical sectional view of a conventional CVD apparatus. 1...Outer furnace wall, 2...Inner furnace wall, 3...Susceptor,
5... Bell jar, 6... Buffer, 7... Nozzle, 8, 8'... Reactant gas, 9... Semiconductor wafer, 1
0.10'...Duct, 11...Exhaust, 12a,
12b...Damper.
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11427685AJPS61272918A (en) | 1985-05-29 | 1985-05-29 | CVD equipment with improved gas flow distribution |
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11427685AJPS61272918A (en) | 1985-05-29 | 1985-05-29 | CVD equipment with improved gas flow distribution |
| Publication Number | Publication Date |
|---|---|
| JPS61272918Atrue JPS61272918A (en) | 1986-12-03 |
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP11427685APendingJPS61272918A (en) | 1985-05-29 | 1985-05-29 | CVD equipment with improved gas flow distribution |
| Country | Link |
|---|---|
| JP (1) | JPS61272918A (en) |
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01251710A (en)* | 1988-03-31 | 1989-10-06 | Toshiba Corp | Vapor growth apparatus |
| WO2000003056A1 (en) | 1998-07-10 | 2000-01-20 | Asm America, Inc. | System and method for reducing particles in epitaxial reactors |
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01251710A (en)* | 1988-03-31 | 1989-10-06 | Toshiba Corp | Vapor growth apparatus |
| WO2000003056A1 (en) | 1998-07-10 | 2000-01-20 | Asm America, Inc. | System and method for reducing particles in epitaxial reactors |
| EP1097251A4 (en)* | 1998-07-10 | 2005-01-12 | Asm Inc | SYSTEM AND METHOD FOR REDUCING PARTICLES IN AN EPITACTIC REACTOR |
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