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JPS61121453A - Breaking and expanding method of brittle thin plate - Google Patents

Breaking and expanding method of brittle thin plate

Info

Publication number
JPS61121453A
JPS61121453AJP59243660AJP24366084AJPS61121453AJP S61121453 AJPS61121453 AJP S61121453AJP 59243660 AJP59243660 AJP 59243660AJP 24366084 AJP24366084 AJP 24366084AJP S61121453 AJPS61121453 AJP S61121453A
Authority
JP
Japan
Prior art keywords
sheet
wafer
expanding
breaking
backside
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP59243660A
Other languages
Japanese (ja)
Inventor
Yuji Owaki
大脇 雄二
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co LtdfiledCriticalMatsushita Electric Industrial Co Ltd
Priority to JP59243660ApriorityCriticalpatent/JPS61121453A/en
Publication of JPS61121453ApublicationCriticalpatent/JPS61121453A/en
Pendinglegal-statusCriticalCurrent

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Classifications

Landscapes

Abstract

PURPOSE:To make it feasible to perform braking and expanding process simultaneously preventing any damage to fine pattern on wafer surface from occuring by a method wherein a sheet bonded with wafers is pressurized with fruid from backside of the wafer bonded surface. CONSTITUTION:Scribed or diced wafers are bonded on the surface of a bonding sheet 2 and while the sheet 2 is held by ring 7 to be located on the position wherein wafers are encircled by the sheet holding ring 7, the space sealed with the sheet 2 is filled with compressed air. Then chips 6 are braked by stress concentration on braling line due to the expansion of sheet 2 as well as the even pressure on the backside of sheet 2 and simultaneously the sheet 2 is expanded spherically. Next an expanding and holding ring -10 is lifted to make the chip bonding plane flat. Through these procedures, braking and expanding process may be performed efficiently bringing nothing into contact with the wafer surfaces since the backside of wafer bonded surface of bonding sheet 2 is pressurized with compressed air.

Description

Translated fromJapanese

【発明の詳細な説明】産業上の利用分野本発明は、半導体素子または表面弾性波フィルター等の
製造方法において、スクライブ加工またはダイシング加
工をされたぜい性薄板(以下ウェハという)のブレイキ
ング・エキスパンド方法に関するものである。
DETAILED DESCRIPTION OF THE INVENTION Field of Industrial Application The present invention relates to breaking and expanding a brittle thin plate (hereinafter referred to as a wafer) that has been subjected to scribing or dicing processing in a method of manufacturing semiconductor devices or surface acoustic wave filters. It is about the method.

従来の技術従来、この種の加工fP:ハ、ブレイクとエキスパンド
が別作業として行われている。
BACKGROUND OF THE INVENTION Conventionally, this type of machining fP: C, break and expand have been performed as separate operations.

すなわち、第3図(ム)に示すように、ウェハ1のスク
ライブまたはダイシング加工された面とは反対側の面を
粘着シート2に貼合わせ、さらに前記加工面を保護用シ
ート3で覆い、ゴム鈑等の弾性体板4上に置く。そして
、粘着シート2側よりローラー5等により力を加え、ブ
レイキングラインへの応力集中によるブレーキングを行
なっていた。
That is, as shown in FIG. 3(m), the surface of the wafer 1 opposite to the scribed or diced surface is bonded to the adhesive sheet 2, the processed surface is further covered with the protective sheet 3, and the rubber Place it on an elastic plate 4 such as a board. Then, force is applied from the adhesive sheet 2 side using a roller 5 or the like to perform braking by concentrating stress on the breaking line.

ローラー6を図示方向だけでなくそれと直角な方向に加
圧状態で移動させて、ウェハ1をチップらにブレイキン
グされる。
The wafer 1 is broken into chips by moving the roller 6 under pressure not only in the direction shown but also in a direction perpendicular thereto.

次に同図(Blに示すように、ブレイキングずみウェハ
、すなわちチップ6が付着している粘着シート’6シー
ト保持用リング7で保持してから、チップ6の付着面側
とは反対側の面を平板8にて押し上げてシートラ延伸さ
せ、その状態のまま平板8の外周面上で、0リング9等
によりシートと平板8を保持し、エキスパンドしてI/
′する。
Next, as shown in FIG. The sheet is pushed up by the flat plate 8 to stretch the sheet, and in this state, the sheet and the flat plate 8 are held on the outer circumferential surface of the flat plate 8 with an O-ring 9, etc., and expanded and I/
'do.

発明が解決しようとする問題点これらの場合、第1図においては、ウェノ・−上に形成
された薄膜、微細ノぐターンがカバーシートと接触する
Cとによる汚染、および外力を間接的とはいえ受けると
いう問題があり、さらにローラーで加圧する過程でブレ
イキングの際に発生する細かなウェハーのかけらが保護
/−ト3とウェハーのパターン面との間に入り込み、パ
ターンに損傷を与える問題ももっていた。
Problems to be Solved by the Invention In these cases, as shown in FIG. Moreover, there is also the problem that fine wafer fragments generated during breaking during the process of applying pressure with rollers can get between the protective plate 3 and the pattern surface of the wafer, damaging the pattern. there was.

また、ブレイクとエキスパンドが別作業として行われて
いることも設備価格、作業性の面から良好なものとは言
えなかった。
Furthermore, the fact that breaking and expanding were performed as separate operations was not a good idea in terms of equipment cost and workability.

本発明はこのような従来の方法の欠点を除去するもので
、ウェハー表面の微細パターンへの損傷を防ぐと共に、
二つの作業を一つにまとめ合理化を図ること全目的とす
るものである。
The present invention eliminates the drawbacks of such conventional methods, prevents damage to fine patterns on the wafer surface, and
The overall purpose is to combine two tasks into one and streamline them.

問題点を解決するための手段この目的を達成するため、本発明は、ウェハの貼付けら
れたシートを、そのウェハ貼付面とは反対の面側より流
体で加圧して、シートに貼り付けたウニ・・表面に他の
物体を接触させることなく、ウェハのブレイキングライ
ン部分に集中的に応力をかけてブレーキングを行い、さ
らにエキスパンド全行う。
Means for Solving the Problems In order to achieve this object, the present invention applies pressure to a sheet with a wafer pasted thereon using fluid from the side opposite to the wafer pasting side, thereby making the sea urchin pasted on the sheet.・・Braking is performed by applying stress intensively to the breaking line portion of the wafer without bringing other objects into contact with the surface, and then the entire expansion is performed.

作用この構成によって、ウェハ表面の微細パターンがなんら
損傷を受けることがなくなり、表面を保護被覆されるこ
となく、パターンが形成されている表面弾性波フィルタ
等の工程歩留を著しく向上させることができ、さらに−
遅動作の中で二つの作業が集約される合理化効果が得ら
れる。
Effect: With this configuration, the fine pattern on the wafer surface is not damaged in any way, and the process yield of surface acoustic wave filters and the like on which patterns are formed can be significantly improved without the surface being covered with a protective coating. , further −
A streamlining effect can be obtained by consolidating two tasks in a slow operation.

実施例以下1本発明の一実施例について第1図全周いて説明す
る。なお第1図において、第2図と同一の部品について
は同一番号を付している。第1図(Blは同図(ム)に
て拡張されたノート2を拡張保持リング10に保持した
状態を示す図である、図において、スクライブまたはダ
イシング加工済ウェハを粘着シート2の表面に貼付け、
このシート2をウェハがシート保持用リング7で囲まれ
る部分に位置するよう前記リング7で保持した状態のま
ま、その前記シート2にて閉じられた空間に圧縮空気全
送りこみ、前記シート2の伸張による力とノート2裏面
に圧力が均等にかかることによるブレイキングラインへ
の応力集中によりチップ6にブレイキングされると同時
に球状にシート2が拡張する。
Embodiment One embodiment of the present invention will now be described with reference to FIG. 1. In FIG. 1, the same parts as in FIG. 2 are given the same numbers. FIG. 1 (Bl is a diagram showing a state in which the expanded notebook 2 shown in FIG. ,
While holding this sheet 2 by the ring 7 so that the wafer is located in the area surrounded by the sheet holding ring 7, all the compressed air is fed into the space closed by the sheet 2, and the sheet 2 is The sheet 2 expands into a spherical shape at the same time as the chip 6 is broken due to the stress concentration on the breaking line due to the force caused by the stretching and the pressure being evenly applied to the back surface of the notebook 2.

次に拡張保持用リング10が上昇し、シート2のチップ
付着面を平面状にする。その状態で拡張保持リング10
に設けた溝部にQ IJング9を装着し、拡張された状
態でシート2を保持する。
Next, the expansion holding ring 10 is raised to make the chip attachment surface of the sheet 2 flat. In that state, the expansion retaining ring 10
A Q IJ ring 9 is attached to the groove provided in the seat 2 to hold the sheet 2 in the expanded state.

このように粘着シート2のウェノ・付着面とは反対の面
側から加圧空気で加圧することにより、ウニ・・表面に
は何も接触させることなく、ブレイキングとエキスパン
ディングを行うことができる、発明の効果以上のように、本発明の方法によれば、ウニ/・のパタ
ーン面に触れることなくチップ化することができ、ウェ
ノ・表面の微細パターンにはパターン切れ、ダストの付
着等の損傷を与えることなく、容易にブレイキングとエ
キスパンディングの二つの作業が一連化されて行えると
いう効果が得られる。
In this way, by applying pressure with pressurized air from the side of the adhesive sheet 2 opposite to the surface to which the sea urchin is attached, breaking and expanding can be performed without any contact with the surface of the sea urchin. Effects of the Invention As described above, according to the method of the present invention, it is possible to make chips without touching the patterned surface of the sea urchin, and the fine pattern on the surface of the sea urchin is free from damage such as pattern breakage and adhesion of dust. This has the effect that the two operations of breaking and expanding can be easily performed in series without giving any problems.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図(Alは本発明の方法の一実施例によるウェハの
ブレイキング・エキスパンド方法を示す断面図、同図(
Blは拡張終了段階での保持状態金示す断面図、第2図
(Al 、 (Bl(d従来のウエノ・ブレイキング・
エキスパンド方法を示す断面図である。2・・・・・・粘着シート、6・・・・・・チップ、7
・・・・・・シート保持リング、9・・・・・・0リン
グ、10・・・・・・拡張保持リング。代理人の氏名 弁理士 中 尾 敏 男 ほか1名第1
図(A)(B)第2図(ハノ(B〕
FIG. 1 (Al is a sectional view showing a wafer breaking/expanding method according to an embodiment of the method of the present invention; FIG.
Bl is a cross-sectional view showing the holding state at the end of expansion stage.
FIG. 3 is a cross-sectional view showing an expanding method. 2... Adhesive sheet, 6... Chip, 7
... Seat retaining ring, 9...0 ring, 10... Expansion retaining ring. Name of agent: Patent attorney Toshio Nakao and 1 other person No. 1
Figure (A) (B) Figure 2 (Hano (B)

Claims (1)

Translated fromJapanese
【特許請求の範囲】[Claims]スクライブ加工又はダイシング加工されたぜい性薄板の
加工面側を粘着シートの一方の面側に貼り付け、前記粘
着シートの他方の面側に流体による圧力を加えて、前記
ぜい性薄板のブレーキングライン部分に応力を集中させ
てブレイキングを行うと同時にエキスパンドすることを
特徴とするぜい性薄板のブレイキング・エキスパンド方
法。
The processed side of a scribed or diced brittle thin plate is pasted on one side of an adhesive sheet, and fluid pressure is applied to the other side of the adhesive sheet to brake the brittle thin plate. A method for breaking and expanding a brittle thin plate, which is characterized by concentrating stress on the lining portion to perform breaking and expanding at the same time.
JP59243660A1984-11-191984-11-19 Breaking and expanding method of brittle thin platePendingJPS61121453A (en)

Priority Applications (1)

Application NumberPriority DateFiling DateTitle
JP59243660AJPS61121453A (en)1984-11-191984-11-19 Breaking and expanding method of brittle thin plate

Applications Claiming Priority (1)

Application NumberPriority DateFiling DateTitle
JP59243660AJPS61121453A (en)1984-11-191984-11-19 Breaking and expanding method of brittle thin plate

Publications (1)

Publication NumberPublication Date
JPS61121453Atrue JPS61121453A (en)1986-06-09

Family

ID=17107107

Family Applications (1)

Application NumberTitlePriority DateFiling Date
JP59243660APendingJPS61121453A (en)1984-11-191984-11-19 Breaking and expanding method of brittle thin plate

Country Status (1)

CountryLink
JP (1)JPS61121453A (en)

Cited By (9)

* Cited by examiner, † Cited by third party
Publication numberPriority datePublication dateAssigneeTitle
JPH0529440A (en)*1991-07-221993-02-05Rohm Co LtdStretching apparatus for tape
US7396742B2 (en)2000-09-132008-07-08Hamamatsu Photonics K.K.Laser processing method for cutting a wafer-like object by using a laser to form modified regions within the object
JP2010177340A (en)*2009-01-282010-08-12Panasonic Electric Works Co LtdDicing method and expanding apparatus
US8058103B2 (en)2003-09-102011-11-15Hamamatsu Photonics K.K.Semiconductor substrate cutting method
JP2012114268A (en)*2010-11-252012-06-14Fuji Electric Co LtdExpand device for semiconductor substrate
US8865566B2 (en)2002-12-032014-10-21Hamamatsu Photonics K.K.Method of cutting semiconductor substrate
US8889525B2 (en)2002-03-122014-11-18Hamamatsu Photonics K.K.Substrate dividing method
KR20160019849A (en)*2014-08-122016-02-22미쓰보시 다이야몬도 고교 가부시키가이샤Method and device for dividing brittle material substrate
JP2016104578A (en)*2016-02-292016-06-09三星ダイヤモンド工業株式会社Separator of weak material substrate

Cited By (28)

* Cited by examiner, † Cited by third party
Publication numberPriority datePublication dateAssigneeTitle
JPH0529440A (en)*1991-07-221993-02-05Rohm Co LtdStretching apparatus for tape
US8937264B2 (en)2000-09-132015-01-20Hamamatsu Photonics K.K.Laser processing method and laser processing apparatus
US7396742B2 (en)2000-09-132008-07-08Hamamatsu Photonics K.K.Laser processing method for cutting a wafer-like object by using a laser to form modified regions within the object
US7547613B2 (en)2000-09-132009-06-16Hamamatsu Photonics K.K.Laser processing method and laser processing apparatus
US7592238B2 (en)2000-09-132009-09-22Hamamatsu Photonics K.K.Laser processing method and laser processing apparatus
US7615721B2 (en)2000-09-132009-11-10Hamamatsu Photonics K.K.Laser processing method and laser processing apparatus
US7626137B2 (en)2000-09-132009-12-01Hamamatsu Photonics K.K.Laser cutting by forming a modified region within an object and generating fractures
US10796959B2 (en)2000-09-132020-10-06Hamamatsu Photonics K.K.Laser processing method and laser processing apparatus
US9837315B2 (en)2000-09-132017-12-05Hamamatsu Photonics K.K.Laser processing method and laser processing apparatus
US8946591B2 (en)2000-09-132015-02-03Hamamatsu Photonics K.K.Method of manufacturing a semiconductor device formed using a substrate cutting method
US8946592B2 (en)2000-09-132015-02-03Hamamatsu Photonics K.K.Laser processing method and laser processing apparatus
US9553023B2 (en)2002-03-122017-01-24Hamamatsu Photonics K.K.Substrate dividing method
US9548246B2 (en)2002-03-122017-01-17Hamamatsu Photonics K.K.Substrate dividing method
US11424162B2 (en)2002-03-122022-08-23Hamamatsu Photonics K.K.Substrate dividing method
US9142458B2 (en)2002-03-122015-09-22Hamamatsu Photonics K.K.Substrate dividing method
US10622255B2 (en)2002-03-122020-04-14Hamamatsu Photonics K.K.Substrate dividing method
US9287177B2 (en)2002-03-122016-03-15Hamamatsu Photonics K.K.Substrate dividing method
US10068801B2 (en)2002-03-122018-09-04Hamamatsu Photonics K.K.Substrate dividing method
US9543256B2 (en)2002-03-122017-01-10Hamamatsu Photonics K.K.Substrate dividing method
US9543207B2 (en)2002-03-122017-01-10Hamamatsu Photonics K.K.Substrate dividing method
US8889525B2 (en)2002-03-122014-11-18Hamamatsu Photonics K.K.Substrate dividing method
US9711405B2 (en)2002-03-122017-07-18Hamamatsu Photonics K.K.Substrate dividing method
US8865566B2 (en)2002-12-032014-10-21Hamamatsu Photonics K.K.Method of cutting semiconductor substrate
US8058103B2 (en)2003-09-102011-11-15Hamamatsu Photonics K.K.Semiconductor substrate cutting method
JP2010177340A (en)*2009-01-282010-08-12Panasonic Electric Works Co LtdDicing method and expanding apparatus
JP2012114268A (en)*2010-11-252012-06-14Fuji Electric Co LtdExpand device for semiconductor substrate
KR20160019849A (en)*2014-08-122016-02-22미쓰보시 다이야몬도 고교 가부시키가이샤Method and device for dividing brittle material substrate
JP2016104578A (en)*2016-02-292016-06-09三星ダイヤモンド工業株式会社Separator of weak material substrate

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