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JPS60192333U - keyboard switch - Google Patents

keyboard switch

Info

Publication number
JPS60192333U
JPS60192333UJP8073884UJP8073884UJPS60192333UJP S60192333 UJPS60192333 UJP S60192333UJP 8073884 UJP8073884 UJP 8073884UJP 8073884 UJP8073884 UJP 8073884UJP S60192333 UJPS60192333 UJP S60192333U
Authority
JP
Japan
Prior art keywords
keyboard switch
switch body
keyboard
insulating sheet
position corresponding
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8073884U
Other languages
Japanese (ja)
Inventor
和夫 井上
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Mektron KK
Original Assignee
Nippon Mektron KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Mektron KKfiledCriticalNippon Mektron KK
Priority to JP8073884UpriorityCriticalpatent/JPS60192333U/en
Publication of JPS60192333UpublicationCriticalpatent/JPS60192333U/en
Pendinglegal-statusCriticalCurrent

Links

Landscapes

Abstract

Translated fromJapanese

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.

Description

Translated fromJapanese
【図面の簡単な説明】[Brief explanation of the drawing]

第１図は本考案の一実施例によるキーボードスイッチの
概念的な要部断面構成図、第２図はスイッチオン状態を
概念的に示す説明図である。１・・・・・・キーボードスイッチ本体、２，３・・・
・・・絶縁シート、４・・・・・・スペーサ、５・・・
・・・透Ｌ　６，７・・・・・・接点パターン、８・・
・・・・操作板、９，１０・・・・・・極性の異なる永
久磁石、１２・・・・・・永久磁石、１３．１４・・・
・・田ツク用磁石、１５・・・・・・ケース。FIG. 1 is a conceptual sectional view of the main parts of a keyboard switch according to an embodiment of the present invention, and FIG. 2 is an explanatory diagram conceptually showing the switch-on state. 1... Keyboard switch body, 2, 3...
...Insulating sheet, 4...Spacer, 5...
...Transparent L 6,7...Contact pattern, 8...
...Operation board, 9,10...Permanent magnet with different polarity, 12...Permanent magnet, 13.14...
...Tatsuku magnet, 15...Case.

Claims (1)

Translated fromJapanese
【実用新案登録請求の範囲】[Scope of utility model registration request]可撓性絶縁シートに形成した一対の接点パターンが対向
してその間にスイッチ動作空隙を形成するように構成し
たキーボードスイッチ本体を備え、該キーボードスイッ
チ本体上にスライド自在に配装されてスライド方向に隣
設させて極性の異なる二枚の磁石を設けた操作板を備え
、上記キーボードスイッチ本体の下部であって前記接点
パターンと対応する位置に配置した磁石を具備するよう
に構成したことを特徴とするキーボードスイッチ。The keyboard switch body is provided with a keyboard switch body configured such that a pair of contact patterns formed on a flexible insulating sheet face each other to form a switch operation gap therebetween, and is slidably disposed on the keyboard switch body in a sliding direction. The keyboard switch is characterized by an operation panel having two adjacent magnets of different polarities, and a magnet arranged at a position corresponding to the contact pattern at the bottom of the keyboard switch body. keyboard switch.
JP8073884U1984-05-311984-05-31 keyboard switchPendingJPS60192333U (en)

Priority Applications (1)

Application NumberPriority DateFiling DateTitle
JP8073884UJPS60192333U (en)1984-05-311984-05-31 keyboard switch

Applications Claiming Priority (1)

Application NumberPriority DateFiling DateTitle
JP8073884UJPS60192333U (en)1984-05-311984-05-31 keyboard switch

Publications (1)

Publication NumberPublication Date
JPS60192333Utrue JPS60192333U (en)1985-12-20

Family

ID=30626873

Family Applications (1)

Application NumberTitlePriority DateFiling Date
JP8073884UPendingJPS60192333U (en)1984-05-311984-05-31 keyboard switch

Country Status (1)

CountryLink
JP (1)JPS60192333U (en)

Cited By (19)

* Cited by examiner, † Cited by third party
Publication numberPriority datePublication dateAssigneeTitle
US6871656B2 (en)1997-05-272005-03-29Tokyo Electron LimitedRemoval of photoresist and photoresist residue from semiconductors using supercritical carbon dioxide process
US6924086B1 (en)2002-02-152005-08-02Tokyo Electron LimitedDeveloping photoresist with supercritical fluid and developer
US6926012B2 (en)1999-11-022005-08-09Tokyo Electron LimitedMethod for supercritical processing of multiple workpieces
US6928746B2 (en)2002-02-152005-08-16Tokyo Electron LimitedDrying resist with a solvent bath and supercritical CO2
US7060422B2 (en)1999-11-022006-06-13Tokyo Electron LimitedMethod of supercritical processing of a workpiece
US7140393B2 (en)2004-12-222006-11-28Tokyo Electron LimitedNon-contact shuttle valve for flow diversion in high pressure systems
US7163380B2 (en)2003-07-292007-01-16Tokyo Electron LimitedControl of fluid flow in the processing of an object with a fluid
US7208411B2 (en)2000-04-252007-04-24Tokyo Electron LimitedMethod of depositing metal film and metal deposition cluster tool including supercritical drying/cleaning module
US7250374B2 (en)2004-06-302007-07-31Tokyo Electron LimitedSystem and method for processing a substrate using supercritical carbon dioxide processing
US7255772B2 (en)2000-07-262007-08-14Tokyo Electron LimitedHigh pressure processing chamber for semiconductor substrate
US7291565B2 (en)2005-02-152007-11-06Tokyo Electron LimitedMethod and system for treating a substrate with a high pressure fluid using fluorosilicic acid
US7307019B2 (en)2004-09-292007-12-11Tokyo Electron LimitedMethod for supercritical carbon dioxide processing of fluoro-carbon films
US7387868B2 (en)2002-03-042008-06-17Tokyo Electron LimitedTreatment of a dielectric layer using supercritical CO2
US7434590B2 (en)2004-12-222008-10-14Tokyo Electron LimitedMethod and apparatus for clamping a substrate in a high pressure processing system
US7435447B2 (en)2005-02-152008-10-14Tokyo Electron LimitedMethod and system for determining flow conditions in a high pressure processing system
US7442636B2 (en)2005-03-302008-10-28Tokyo Electron LimitedMethod of inhibiting copper corrosion during supercritical CO2 cleaning
US7491036B2 (en)2004-11-122009-02-17Tokyo Electron LimitedMethod and system for cooling a pump
US7524383B2 (en)2005-05-252009-04-28Tokyo Electron LimitedMethod and system for passivating a processing chamber
US7550075B2 (en)2005-03-232009-06-23Tokyo Electron Ltd.Removal of contaminants from a fluid

Cited By (20)

* Cited by examiner, † Cited by third party
Publication numberPriority datePublication dateAssigneeTitle
US6871656B2 (en)1997-05-272005-03-29Tokyo Electron LimitedRemoval of photoresist and photoresist residue from semiconductors using supercritical carbon dioxide process
US7060422B2 (en)1999-11-022006-06-13Tokyo Electron LimitedMethod of supercritical processing of a workpiece
US6926012B2 (en)1999-11-022005-08-09Tokyo Electron LimitedMethod for supercritical processing of multiple workpieces
US7208411B2 (en)2000-04-252007-04-24Tokyo Electron LimitedMethod of depositing metal film and metal deposition cluster tool including supercritical drying/cleaning module
US7255772B2 (en)2000-07-262007-08-14Tokyo Electron LimitedHigh pressure processing chamber for semiconductor substrate
US6928746B2 (en)2002-02-152005-08-16Tokyo Electron LimitedDrying resist with a solvent bath and supercritical CO2
US6924086B1 (en)2002-02-152005-08-02Tokyo Electron LimitedDeveloping photoresist with supercritical fluid and developer
US7044662B2 (en)2002-02-152006-05-16Tokyo Electron LimitedDeveloping photoresist with supercritical fluid and developer
US7387868B2 (en)2002-03-042008-06-17Tokyo Electron LimitedTreatment of a dielectric layer using supercritical CO2
US7163380B2 (en)2003-07-292007-01-16Tokyo Electron LimitedControl of fluid flow in the processing of an object with a fluid
US7250374B2 (en)2004-06-302007-07-31Tokyo Electron LimitedSystem and method for processing a substrate using supercritical carbon dioxide processing
US7307019B2 (en)2004-09-292007-12-11Tokyo Electron LimitedMethod for supercritical carbon dioxide processing of fluoro-carbon films
US7491036B2 (en)2004-11-122009-02-17Tokyo Electron LimitedMethod and system for cooling a pump
US7434590B2 (en)2004-12-222008-10-14Tokyo Electron LimitedMethod and apparatus for clamping a substrate in a high pressure processing system
US7140393B2 (en)2004-12-222006-11-28Tokyo Electron LimitedNon-contact shuttle valve for flow diversion in high pressure systems
US7291565B2 (en)2005-02-152007-11-06Tokyo Electron LimitedMethod and system for treating a substrate with a high pressure fluid using fluorosilicic acid
US7435447B2 (en)2005-02-152008-10-14Tokyo Electron LimitedMethod and system for determining flow conditions in a high pressure processing system
US7550075B2 (en)2005-03-232009-06-23Tokyo Electron Ltd.Removal of contaminants from a fluid
US7442636B2 (en)2005-03-302008-10-28Tokyo Electron LimitedMethod of inhibiting copper corrosion during supercritical CO2 cleaning
US7524383B2 (en)2005-05-252009-04-28Tokyo Electron LimitedMethod and system for passivating a processing chamber

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