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JPS5986214U - Screen scum cleaning device - Google Patents

Screen scum cleaning device

Info

Publication number
JPS5986214U
JPS5986214UJP13974683UJP13974683UJPS5986214UJP S5986214 UJPS5986214 UJP S5986214UJP 13974683 UJP13974683 UJP 13974683UJP 13974683 UJP13974683 UJP 13974683UJP S5986214 UJPS5986214 UJP S5986214U
Authority
JP
Japan
Prior art keywords
screen
cleaning
tank
washing
scum
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP13974683U
Other languages
Japanese (ja)
Other versions
JPS613444Y2 (en
Inventor
伏尾　正則
山県　徹生
Original Assignee
日立機電工業株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日立機電工業株式会社filedCritical日立機電工業株式会社
Priority to JP13974683UpriorityCriticalpatent/JPS5986214U/en
Publication of JPS5986214UpublicationCriticalpatent/JPS5986214U/en
Application grantedgrantedCritical
Publication of JPS613444Y2publicationCriticalpatent/JPS613444Y2/ja
Grantedlegal-statusCriticalCurrent

Links

Abstract

Translated fromJapanese

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.

Description

Translated fromJapanese
【図面の簡単な説明】[Brief explanation of the drawing]

図面は本考案スクリーンかすの洗浄装置を示す一実施例
図である。１・・・・・・第一の洗浄槽、２・・・・・・高圧ノズ
ル、３・・・・・・第二の洗浄槽、４・・・・・・ドラ
ムスクリーン、５・・・・・・循環回路、６・・・・・
・排水管、７・・・・・・掻揚装置、８・・・・・・脱
水機、９・・・・・・補給回路、１０・・・・・・排水
ビット、１１・・・・・・排水弁、１２・・・・・・オ
ーバーフロー管、Ｐ・・・・・・循環ポンプ。The drawing shows an embodiment of the screen scum cleaning device of the present invention. 1...First cleaning tank, 2...High pressure nozzle, 3...Second cleaning tank, 4...Drum screen, 5... ...Circulation circuit, 6...
・Drain pipe, 7... Scraping device, 8... Dehydrator, 9... Supply circuit, 10... Drainage bit, 11... ...Drain valve, 12...Overflow pipe, P...Circulation pump.

Claims (1)

Translated fromJapanese
【実用新案登録請求の範囲】[Scope of utility model registration request]上位に高圧で洗浄水を槽水面に向って噴射する高圧ノズ
ルを設けた第一洗浄槽と第二洗浄槽とをドラムスクリー
ンを挾んで隣接し、ドラムスクリーンよりの洗浄水を第
一洗浄槽へ戻す循環回路を、第一洗浄槽とドラムスクリ
ーフ間に設け、且上記ドラムスクリーンを、その回転中
心を第一洗浄槽の洗浄水面に対比して低くなるよう設け
ると共に、洗浄後のスクリーンかすを水切りしつつ掻き
上げ排出するための掻上装置を第二洗浄槽に設け、更ら
にこの掻揚装置に洗浄されたスクリーンかすの脱水を行
う脱水機を併設してなるスクリーンかすの洗浄装置。A first cleaning tank and a second cleaning tank, each equipped with a high-pressure nozzle that sprays high-pressure cleaning water toward the tank water surface, are placed adjacent to each other with a drum screen in between, and the cleaning water from the drum screen is directed to the first cleaning tank. A return circulation circuit is provided between the first washing tank and the drum screen, and the drum screen is provided so that its center of rotation is lower than the washing water surface of the first washing tank, and the screen residue after washing is drained. This device for cleaning screen scum is provided with a scraping device for scraping up and discharging the screen scum while cleaning the second cleaning tank, and a dehydrator for dewatering the cleaned screen scum, which is further attached to the scraping device.
JP13974683U1983-09-081983-09-08 Screen scum cleaning deviceGrantedJPS5986214U (en)

Priority Applications (1)

Application NumberPriority DateFiling DateTitle
JP13974683UJPS5986214U (en)1983-09-081983-09-08 Screen scum cleaning device

Applications Claiming Priority (1)

Application NumberPriority DateFiling DateTitle
JP13974683UJPS5986214U (en)1983-09-081983-09-08 Screen scum cleaning device

Publications (2)

Publication NumberPublication Date
JPS5986214Utrue JPS5986214U (en)1984-06-11
JPS613444Y2 JPS613444Y2 (en)1986-02-03

Family

ID=30313119

Family Applications (1)

Application NumberTitlePriority DateFiling Date
JP13974683UGrantedJPS5986214U (en)1983-09-081983-09-08 Screen scum cleaning device

Country Status (1)

CountryLink
JP (1)JPS5986214U (en)

Cited By (19)

* Cited by examiner, † Cited by third party
Publication numberPriority datePublication dateAssigneeTitle
US7037813B2 (en)2000-08-112006-05-02Applied Materials, Inc.Plasma immersion ion implantation process using a capacitively coupled plasma source having low dissociation and low minimum plasma voltage
US7094316B1 (en)2000-08-112006-08-22Applied Materials, Inc.Externally excited torroidal plasma source
US7094670B2 (en)2000-08-112006-08-22Applied Materials, Inc.Plasma immersion ion implantation process
US7166524B2 (en)2000-08-112007-01-23Applied Materials, Inc.Method for ion implanting insulator material to reduce dielectric constant
US7183177B2 (en)2000-08-112007-02-27Applied Materials, Inc.Silicon-on-insulator wafer transfer method using surface activation plasma immersion ion implantation for wafer-to-wafer adhesion enhancement
US7223676B2 (en)2002-06-052007-05-29Applied Materials, Inc.Very low temperature CVD process with independently variable conformality, stress and composition of the CVD layer
US7288491B2 (en)2000-08-112007-10-30Applied Materials, Inc.Plasma immersion ion implantation process
US7294563B2 (en)2000-08-102007-11-13Applied Materials, Inc.Semiconductor on insulator vertical transistor fabrication and doping process
US7303982B2 (en)2000-08-112007-12-04Applied Materials, Inc.Plasma immersion ion implantation process using an inductively coupled plasma source having low dissociation and low minimum plasma voltage
US7312162B2 (en)2005-05-172007-12-25Applied Materials, Inc.Low temperature plasma deposition process for carbon layer deposition
US7312148B2 (en)2005-08-082007-12-25Applied Materials, Inc.Copper barrier reflow process employing high speed optical annealing
US7323401B2 (en)2005-08-082008-01-29Applied Materials, Inc.Semiconductor substrate process using a low temperature deposited carbon-containing hard mask
US7335611B2 (en)2005-08-082008-02-26Applied Materials, Inc.Copper conductor annealing process employing high speed optical annealing with a low temperature-deposited optical absorber layer
US7422775B2 (en)2005-05-172008-09-09Applied Materials, Inc.Process for low temperature plasma deposition of an optical absorption layer and high speed optical annealing
US7429532B2 (en)2005-08-082008-09-30Applied Materials, Inc.Semiconductor substrate process using an optically writable carbon-containing mask
US7428915B2 (en)2005-04-262008-09-30Applied Materials, Inc.O-ringless tandem throttle valve for a plasma reactor chamber
US7430984B2 (en)2000-08-112008-10-07Applied Materials, Inc.Method to drive spatially separate resonant structure with spatially distinct plasma secondaries using a single generator and switching elements
US7465478B2 (en)2000-08-112008-12-16Applied Materials, Inc.Plasma immersion ion implantation process
US7479456B2 (en)2004-08-262009-01-20Applied Materials, Inc.Gasless high voltage high contact force wafer contact-cooling electrostatic chuck

Cited By (21)

* Cited by examiner, † Cited by third party
Publication numberPriority datePublication dateAssigneeTitle
US7294563B2 (en)2000-08-102007-11-13Applied Materials, Inc.Semiconductor on insulator vertical transistor fabrication and doping process
US7288491B2 (en)2000-08-112007-10-30Applied Materials, Inc.Plasma immersion ion implantation process
US7465478B2 (en)2000-08-112008-12-16Applied Materials, Inc.Plasma immersion ion implantation process
US7166524B2 (en)2000-08-112007-01-23Applied Materials, Inc.Method for ion implanting insulator material to reduce dielectric constant
US7183177B2 (en)2000-08-112007-02-27Applied Materials, Inc.Silicon-on-insulator wafer transfer method using surface activation plasma immersion ion implantation for wafer-to-wafer adhesion enhancement
US7094670B2 (en)2000-08-112006-08-22Applied Materials, Inc.Plasma immersion ion implantation process
US7430984B2 (en)2000-08-112008-10-07Applied Materials, Inc.Method to drive spatially separate resonant structure with spatially distinct plasma secondaries using a single generator and switching elements
US7291545B2 (en)2000-08-112007-11-06Applied Materials, Inc.Plasma immersion ion implantation process using a capacitively couple plasma source having low dissociation and low minimum plasma voltage
US7094316B1 (en)2000-08-112006-08-22Applied Materials, Inc.Externally excited torroidal plasma source
US7303982B2 (en)2000-08-112007-12-04Applied Materials, Inc.Plasma immersion ion implantation process using an inductively coupled plasma source having low dissociation and low minimum plasma voltage
US7037813B2 (en)2000-08-112006-05-02Applied Materials, Inc.Plasma immersion ion implantation process using a capacitively coupled plasma source having low dissociation and low minimum plasma voltage
US7223676B2 (en)2002-06-052007-05-29Applied Materials, Inc.Very low temperature CVD process with independently variable conformality, stress and composition of the CVD layer
US7393765B2 (en)2002-06-052008-07-01Applied Materials, Inc.Low temperature CVD process with selected stress of the CVD layer on CMOS devices
US7479456B2 (en)2004-08-262009-01-20Applied Materials, Inc.Gasless high voltage high contact force wafer contact-cooling electrostatic chuck
US7428915B2 (en)2005-04-262008-09-30Applied Materials, Inc.O-ringless tandem throttle valve for a plasma reactor chamber
US7312162B2 (en)2005-05-172007-12-25Applied Materials, Inc.Low temperature plasma deposition process for carbon layer deposition
US7422775B2 (en)2005-05-172008-09-09Applied Materials, Inc.Process for low temperature plasma deposition of an optical absorption layer and high speed optical annealing
US7429532B2 (en)2005-08-082008-09-30Applied Materials, Inc.Semiconductor substrate process using an optically writable carbon-containing mask
US7335611B2 (en)2005-08-082008-02-26Applied Materials, Inc.Copper conductor annealing process employing high speed optical annealing with a low temperature-deposited optical absorber layer
US7323401B2 (en)2005-08-082008-01-29Applied Materials, Inc.Semiconductor substrate process using a low temperature deposited carbon-containing hard mask
US7312148B2 (en)2005-08-082007-12-25Applied Materials, Inc.Copper barrier reflow process employing high speed optical annealing

Also Published As

Publication numberPublication date
JPS613444Y2 (en)1986-02-03

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