【発明の詳細な説明】本発明は、アモルファスまたは多結晶半導体の太陽？ｌ
ｉ池に係わり、特にその特異な形状を採用したことによ
り変換効率の高し・太陽電池に関する。DETAILED DESCRIPTION OF THE INVENTION The present invention provides an amorphous or polycrystalline semiconductor solar device. l
This invention relates to i-cells, and particularly to solar cells with high conversion efficiency due to their unique shape.
光電変換層にアモルファスシリコン半導体を用いる太陽
電池は、低コスト太陽電池の第一候補として有望視され
、各方面でその変換効率の向−Ｉ−の努力がなされて（
・る。しかしながら、従来の太陽電池は平板構造であり
、その形状から、利用形態におのづかも制約があり、さ
らに名えば、平板＋１１ｊ造では５ ｃｍ角程度の大型
素子にすると変換効率が６〜４％程度にしかならないと
いう欠点があった。Solar cells that use amorphous silicon semiconductors in their photoelectric conversion layers are seen as promising candidates as low-cost solar cells, and efforts are being made in various fields to improve their conversion efficiency.
・Ru. However, conventional solar cells have a flat plate structure, and due to their shape, there are restrictions on how they can be used.For example, in a flat plate +11J structure, if a large element of about 5 cm square is used, the conversion efficiency is 6 to 4. The disadvantage was that it was only about %.
この原因は、大形化するにつれて、アモルファスシリコ
ン膜が不均一になりやすい、ピンホールＡ′、９−の欠
陥が増える、透明導電膜の抵抗が大きくなり電池の内部
抵抗が増すからてあイ）。特＋ＬＬｃ、現在の透明導電
膜は、酸化インジウム−酸化スズ系の１′１゛０膜と呼
ばれるものであるか、その■１抵抗は１０〜２００Ω／
ｄと大きく、１−の高抵抗は無視できない問題となって
いる。一部にその解決策として透明導電膜の上に枝状の
金属層を設け、透明導電膜の低導電性を金属層で補なう
ようにし７た才板形の太陽電池が提案されているが、枝
状の金属層が太陽光線の入射を遮ぎ゛す、これが変換効
率の低下をもたらすと℃・う別の問題を牛して（・る、
。The reasons for this are that as the size increases, the amorphous silicon film tends to become non-uniform, defects such as pinholes A' and 9- increase, and the resistance of the transparent conductive film increases, increasing the internal resistance of the battery. ). Special +LLc, the current transparent conductive film is what is called a 1'1'0 film based on indium oxide-tin oxide, and its resistance is 10 to 200Ω/1.
The high resistance of d and 1- is a problem that cannot be ignored. As a solution to this problem, a plate-shaped solar cell has been proposed in which a branch-like metal layer is provided on a transparent conductive film, and the metal layer compensates for the low conductivity of the transparent conductive film. However, the branch-like metal layer blocks the incidence of sunlight, which leads to a decrease in conversion efficiency and causes another problem.
.
本発明は、以上のような点を鑑み、鋭念丁）にしたもの
であり、具体的には、基本として少なくとも側面が良導
電性の棒状物を用（・、これを一方の電極とし、光に活
性なアモルファスの半導体層を基体の１ｌｔｉｌ１面に
形成し、さらに透明導電層を該半導体層の上に積層して
なる棒状の太陽電池を基本単位とし、かかる太陽電池を
多数平行に並べ、他方の電極として、前記の透明導電層
上の一部に、さらに言えば、太陽光を遮ぎらないような
位置に多数の透明導電層を並列的に接続する対電極層を
設けてなる太陽電池である。The present invention has been made in consideration of the above points, and specifically, basically uses a rod-shaped object with at least one side surface having good conductivity (this is used as one electrode, The basic unit is a rod-shaped solar cell in which a photoactive amorphous semiconductor layer is formed on one surface of a substrate and a transparent conductive layer is laminated on the semiconductor layer, and a large number of such solar cells are arranged in parallel, As the other electrode, a solar cell is provided with a counter electrode layer that connects a large number of transparent conductive layers in parallel on a part of the transparent conductive layer, or more specifically, in a position that does not block sunlight. It is.
図面の第１図および第２図に示されろ本発明の太陽電池
の基本単位につ（・て詳細に説明すると、基体（１）は
その断面の幅に比して長さの犬き℃・棒状物であり、材
質として金属の単体を用いるか、あるいはガラスやセラ
ミックなどの絶縁物の表面に金属のめっき層や蒸着層を
設けたものなど、少なくとも表面を良導電性である棒状
基体を用いる。The basic unit of the solar cell of the present invention as shown in FIGS. 1 and 2 of the drawings will be described in detail.・A rod-shaped substrate that is made of a single metal or has at least a highly conductive surface, such as a metal plating layer or vapor deposition layer on the surface of an insulating material such as glass or ceramic. use
図の実施例では断面円形の基体（１１であり、その側面
のほぼ全周に光に活性なアモルファスシリコンの半導体
層（３）が設けられている。ここで「光に対して活性」
という意味は、下もし７くは十からｎ”−４１，１／１
型／ｐ＋型 の三層構成のアモルファスンリコン半導体
層となし、入射する光のエネルギーを電気エネルギーに
変換できる半導体層であることを意味する。図の実施例
では、半導体層（３）は基体［１１の左端部（２）にお
いて設けられていないか、これはこの左端部（２）を、
基体（１）を一方の市、イ會とした際の端子部分とする
ためである。半導体層（３）の上には透明導電層（４）
を積層する。透明導電層（／１）の拐τ〔とじては酸化
インジウム、酸化スズ、または酸化インジウム−酸化ス
ズの二成分脱（Ｉ ｉ’ ０ 膜’）などを用いるか、
金の蒸着薄膜を用いイ）ことかあげられる。図の実施例
では、この透明導電層上一部に、すなわち図の例では下
側半分に、良導電層（５）を設けている。この良導電層
（５）は特に必要とするものではないが、形成する場合
には、基体（１）の長手方向にそって長細（設けるのか
良く、かかる構造のとき、他方の電極を形成した時、接
触抵抗を下げる働きがある。ずブエわち、失言したよう
に透明導電膜（４）は１０〜２００Ω／ｄ程度の比較的
高抵抗のものであり、良導電層（５）は、後に設ける対
電）水層（力との導電性を補なう集電体となりつるもの
である。良導電層（５）としては、真空蒸着などの薄膜
形成手段にて金属層を施すほか、銀ペーストや導電性イ
ンキを塗布もしくは印刷して形成する手段があげられる
。In the illustrated embodiment, a substrate (11) having a circular cross section is provided with a photoactive amorphous silicon semiconductor layer (3) on almost the entire circumference of its side surface.
means below 7 or 10 to n"-41,1/1
It is an amorphous silicon semiconductor layer with a three-layer structure of type/p+ type, meaning that it is a semiconductor layer that can convert the energy of incident light into electrical energy. In the embodiment shown, the semiconductor layer (3) is not provided at the left end (2) of the substrate [11, which means that the left end (2)
This is to serve as a terminal portion when the base body (1) is used as one side. A transparent conductive layer (4) is provided on the semiconductor layer (3).
Laminate. Deposition τ of the transparent conductive layer (/1) [using indium oxide, tin oxide, or binary desorption of indium oxide-tin oxide (I i' 0 film'), etc.
A) Using a vapor-deposited thin film of gold can be mentioned. In the illustrated embodiment, a good conductive layer (5) is provided on a portion of the transparent conductive layer, that is, in the lower half of the transparent conductive layer. This highly conductive layer (5) is not particularly required, but if it is formed, it may be provided in an elongated manner along the longitudinal direction of the substrate (1). The transparent conductive film (4) has a relatively high resistance of about 10 to 200 Ω/d, and the good conductive layer (5) The water layer (which will be provided later) acts as a current collector to supplement the conductivity with the force.As a good conductive layer (5), a metal layer can be applied by thin film forming means such as vacuum evaporation. , a means of forming by applying or printing silver paste or conductive ink.
基体（１）の断面形状は、図の実施例では円形であり、
これが一般的な形状であると言えるが、その他の形状、
例えば断面四角形の板状体や断面楕円形のものなども本
発明に含まれる。また、その幅について言うと、幅があ
まりにも大きくして、それにつれて透明導電層（４）の
幅も太きぐすると、電池の抵抗が増すので、基体（１）
の幅はあまり大きくしないのが良い。１０市颯下の幅、
好ましくは５〜Ｑ１ｍｍ程度の径ないし幅の基体（１）
を用（・ることか良（゛。The cross-sectional shape of the base (1) is circular in the illustrated embodiment;
This can be said to be a general shape, but other shapes,
For example, the present invention also includes plate-shaped bodies with a square cross section and those with an elliptical cross section. Regarding the width, if the width is made too large and the width of the transparent conductive layer (4) is also increased accordingly, the resistance of the battery will increase.
It is best not to make the width too large. 10 city Soshita width,
Substrate (1) preferably having a diameter or width of about 5 to Q1 mm
It is good to use (・kotoka good (゛.
本発明は、こうして形成された太陽電池の１本々々では
なく、これらを平板状に集合したものであく）。すな、
！フち、第３図に示すように、棒状の基体（１）のそれ
ぞれに半導体層（３）、透明導電層（４）、必要に応じ
て良導電層（５）を形成した基本印付の棒状太陽電池（
６）を、互いに平行に多数並列させ、各々の透明導電層
（４）と電気的に接触するように、−畳Ｊ−の面（太陽
光が照射しない裏面）（ｆこ対電極層（７）を設けてな
る。対電極層（７）とし７ては、／＋、Ｒペーストθ）
ような導電性塗料を塗布するか、ある（・は金属を蒸着
法やめっき法にて形成するのが一般的である。The present invention does not focus on the individual solar cells formed in this way, but on an assembly of these solar cells in a flat plate shape). sand,
! As shown in Fig. 3, a basic stamped substrate is formed by forming a semiconductor layer (3), a transparent conductive layer (4), and, if necessary, a good conductive layer (5) on each of the rod-shaped substrates (1). Rod-shaped solar cell (
6) are arranged in parallel to each other, and the counter electrode layer (7 ) is provided.The counter electrode layer (7) is /+, R paste θ).
It is common to apply a conductive paint such as, or to form a metal using a vapor deposition method or a plating method.
並列配置された棒状の太陽電池（６）は、その形態で固
定するべく、太陽′＠池の両端部を樹脂等で硬？Ｊ）ら
れろ。このようにするには、例えば第４図（，１）〜［
）に示ずように並設用の治具（８）を用意し、こλ′１
に基本単位たる棒状の太陽電池（６）を載置しく第４図
（ｂ））、この上部なａｔ脂接着剤や手合性樹脂ある（
・は熱可塑性拉１脂などの硬化性制料（９）にて固定し
く第４図（Ｃ））、続いて第４図（ｄ）に示すように冶
具１８）を取りはずし、第４図（ｅ＋に示す如く、反対
面も硬化性材料（９）′にて固定ずろものである。第４
図げ）に示すように硬化性材料（９）はｉｆす端部にの
み施されるので、太陽光線の入射を遮きイ）ものてはな
（・３３硬化“性材料（９） ＋９＋’は耐候性の高い
Ａし料を川（、・るのが９１、・。The rod-shaped solar cells (6) arranged in parallel are hardened with resin or the like at both ends of the solar cell to fix them in that form. J) Let it go. To do this, for example, FIG.
) Prepare a jig (8) for parallel installation as shown in
A rod-shaped solar cell (6), which is the basic unit, is placed on the top (Fig. 4(b)), and the upper part is coated with attenuated adhesive or adhesive resin (Fig. 4(b)).
- is fixed with a hardening material (9) such as thermoplastic resin (Fig. 4 (C)), then the jig 18) is removed as shown in Fig. 4 (d), and the jig 18) is fixed as shown in Fig. 4 (D). As shown in e+, the opposite side is also fixed with a curable material (9)'.
As shown in Fig. 1), the curable material (9) is applied only to the edges, so it blocks the incidence of sunlight. The material is highly weather resistant.
多くの場合、対電（水層（７）の形成は、棒状の太陽電
池（Ｇ）の固定を終えた後に行なうのが良く、その場合
、棒状基板の直線性が悪く、棒相互の接触が悪い場合に
は、低温乾燥タイプのＡｇペーストで梓と棒の谷間な狸
めるか、素子裏面の全面に亘ってベースト層を形成する
処置をとる。この処置はイ仝の直線ｔ１−が良好な場合
でも、実際に太陽電池が使用される状況下では、温度の
」−下が大きく、基板のぼり張、収縮により、素子間の
電気的接触状態が悲くなる小があり、少なくとも谷間を
埋めイ）処置はした方が好ましい。In many cases, it is best to form the counter electrode (water layer (7)) after fixing the rod-shaped solar cells (G). In bad cases, take measures such as applying a low-temperature drying type Ag paste to the valley between the azusa and the rod, or forming a base layer over the entire back surface of the element. Even in such cases, under the conditions in which solar cells are actually used, there is a large temperature drop, and the expansion and contraction of the substrate can cause poor electrical contact between elements. b) It is preferable to take action.
本発明は以」二のような構造の太陽電池であり、本発明
によれば、第３図に示すように、上方から入射する大阪
光線（β）は対′電極層（力によって遮ぎられるという
ことが全くなく、太陽′電池は全ての太陽光線を受は取
ることができる。しかも、抵抗率、の高い透明導電層の
導−性は、基本単位である棒状の太陽電池の径（幅）を
小さくすることにより導眠抵抗も低くなり、大形の太陽
電池であってもエネルギーロスの少ない、したがって、
入射ずろ太陽エネルギーに対し２て変換効率の高い太ｌ
（ｊ、ｊ ？Ｉｉ池となるものである。The present invention is a solar cell having the following structure.According to the present invention, as shown in FIG. The solar cell can receive and absorb all the sunlight.Moreover, the conductivity of the transparent conductive layer with high resistivity is limited by the diameter (width) of the rod-shaped solar cell, which is the basic unit. ), the sleep-guiding resistance is also lowered, resulting in less energy loss even with large solar cells.
Thick l with high conversion efficiency for incident solar energy
(j, j ?Ii pond.
その他、本発明の太陽電池によれば、入射した太陽光線
は電池内部で繰り返し反射を行ない、光に対して活性な
Ｉ］−１−型／１型／・１）ｌ型 の半Ｊ９体層を何度
も横切るということがある、ずメ［わＩ原第５図に示す
ように、透明導電層（４）の而（７（二対し７てｊ：１
めに入射した太陽光線彫）は、半導体層（２＋を経て、
基体（１）の金属光沢面（ａ）Ｋて反射し、透明導電層
（４）の面（１））にて全反射して丙び半導体層（２１
−・、入射１イ）という現象がある。このことも、光エ
ネルギーを？ｌ；：気エネルギー−・変換する効率を高
めるのに寄りするものである。In addition, according to the solar cell of the present invention, incident sunlight is repeatedly reflected inside the cell, and a half-J9 body layer of the photoactive I]-1- type/1 type/.1) l type is formed. As shown in Figure 5, the structure of the transparent conductive layer (4) (7 (2 to 7 to j:1) may be crossed many times.
The sun rays incident on the lens pass through the semiconductor layer (2+,
It is reflected by the metallic glossy surface (a)K of the substrate (1), totally reflected by the surface (1)) of the transparent conductive layer (4), and then reflected by the semiconductor layer (21).
There is a phenomenon called -・, incidence 1a). Is this also light energy? l;: Qi energy - It is used to increase the efficiency of conversion.
なお、本発明の太陽′電池に用いる光に活性な崖導体層
はアモルファス（非晶質）または多結晶体型であるから
、断面が円形、四角形等の任意の形状の基体であっても
、プラズマ気相蒸着法や、真空蒸着法、反応性スパッタ
ー蒸着法などで容易に施すことができることは言うまで
もなし・。It should be noted that since the photoactive cliff conductor layer used in the solar cell of the present invention is amorphous or polycrystalline, even if the substrate has an arbitrary shape such as a circular or square cross section, it will not react with plasma. Needless to say, it can be easily applied by vapor phase deposition, vacuum deposition, reactive sputter deposition, etc.
以１ニーに本発明の太陽電池を作成した実施例を述・＼
る３゜〔実施例１〕基体として２市径の表面を鏡面仕上げした長さ７０ｍｍ
のステンレス鋼の丸棒を用（・、この基体を中性洗剤溶
液で超音波洗浄した後、純水中でリンスｌ〜、酸処叩に
より重金属を除去し、再び純水による超名波洗浄、カス
ケードリンサーによるリンスを施した後、イソプロピル
アルコールろ洗ａ十乾燥を行ない、基体の前処理とした
。Below, we will describe an example in which a solar cell of the present invention was created.
3゜ [Example 1] The base has a length of 70 mm with a mirror finish on the surface of 2 city diameters.
Using a stainless steel round bar (・, this substrate was ultrasonically cleaned with a neutral detergent solution, then rinsed in pure water ~, heavy metals were removed by acid treatment, ultrasonically cleaned with pure water again, After rinsing with a cascade rinser, the substrate was filtered with isopropyl alcohol, dried, and pretreated.
この基体の端部を５１１１１１１にわたってマスクした
ものをプラズマＣ Ｖ Ｉ）装置内に、蒸着物が均一に
表ｉｆｉ＋にイ」着するように回転治具に支持させ、電
気的（Ｃ浮いた状態に設置した。基体を接地状態にして
も、カソード電極としてもさしつかえなし・。基本的な
反応ガスとしては、水素ガスに対してＳ ＋ １−１
ｔガスを１０％含有する混合ガスを用し・た。ｎ＋型の
半導体層を形成するためのガスとしては、水素ガスに対
してホスフィンガス（ＰＨ３）を１０００Ｐ Ｐ Ｍ添
加したガスを前記の混合ガスに対して体積比で０． Ｏ
Ｏ ４〜１％の間で混入したガスを用い、ｐ＋型の半
導体層を形成するためのガスとしては、水素ガスに対し
てＢ２１１６ガスを１ ０ ０ ０ Ｐ Ｐ ｉ’ｖｆ
添加したガスを前記の混合ガスに対して体積比で０００
１〜１％の間で混入したガスを用いた。層の厚さは、ｐ
＋型／Ｉ型／・１１″−型それぞれ５０〜５００λ／ｓ
ｏｏｏ−ｉ ｏｏｏｏＸ／＋ Ｄｏ 〜４ １１０［］
人とした。混合ガスの流量は１０〜＋ ０ ０ Ｓ Ｃ
Ｃ７ｍで装置内に導入した。蒸着時の基体の温度は２
００〜３００℃に設定し、光に活性なアモルファスシリ
コン半導体層を棒状基体上に形成した、。The end of this substrate was masked over 51111111, and was supported on a rotating jig in a plasma CVI) apparatus so that the deposit was uniformly deposited on the surface, and electrically (in a floating state). It can be used as a cathode electrode even if the substrate is grounded.The basic reaction gas is S + 1-1 with respect to hydrogen gas.
A mixed gas containing 10% t gas was used. As a gas for forming an n+ type semiconductor layer, a gas obtained by adding 1000 PPM of phosphine gas (PH3) to hydrogen gas is used at a volume ratio of 0.000 PPM to the above mixed gas. O
Using a gas mixed with O between 4 and 1%, B2116 gas was added to hydrogen gas at 1000 P Pi'vf as a gas for forming a p+ type semiconductor layer.
The volume ratio of the added gas to the above mixed gas is 000
A mixed gas between 1 and 1% was used. The layer thickness is p
+ type/I type/・11″- type each 50 to 500λ/s
ooo-i ooooX/+ Do ~4 110[]
As a person. The flow rate of the mixed gas is 10~+00 SC
C7m was introduced into the apparatus. The temperature of the substrate during vapor deposition is 2
The temperature was set at 00 to 300°C, and a photoactive amorphous silicon semiconductor layer was formed on a rod-shaped substrate.
次に、このものを透明導電膜形成用のスパック−蒸着装
置内に移し、基板と透明導電膜がシー３−トしないよう
にマスクした後、酸化スズを５％含有する酸化インジウ
ムの透明導電膜をｓ ［１ ０ ）１厚に形成し７こ。Next, this material was transferred into a spuck-evaporation apparatus for forming a transparent conductive film, and after masking so that the substrate and the transparent conductive film did not form a sheet, a transparent conductive film of indium oxide containing 5% tin oxide was applied. is formed to have a thickness of s [1 0 )1 and 7 pieces.
この膜の光透過率は８０〜９０％て１００〜２００Ω／
ｄの面抵抗てあった。The light transmittance of this film is 80-90% and 100-200Ω/
There was a resistance on the d side.
このよう（（シて得られた太陽電池の下側３１′分に１
ｏｏｏＸ厚の金属アルミニウムを真空蒸着して良導電層
とした。In this way ((())
Metal aluminum having a thickness of oooX was vacuum deposited to form a highly conductive layer.
次に露出した基体の端部に電極リードをノ・ンダイτ１
けし、これを６０個第４図に示すように並列に設置し、
裏面（で銀ペーストによる対電極層を形成して約７０
ｍｍ角の太陽′電池とした。上方から入射する光エネル
ギーの６〜５％を電気エネルギーに変換し、大形化によ
る変換効率の低下があまり見られなかった。Next, connect the electrode lead to the exposed end of the substrate.
60 poppies were installed in parallel as shown in Figure 4.
Form a counter electrode layer with silver paste on the back side (approximately 70 min.
It was made into a mm square solar cell. 6 to 5% of the light energy incident from above was converted into electrical energy, and the conversion efficiency did not decrease much due to the increase in size.
〔実施例２〕直径５ ｍｍで長さ＋ｏｏｍｍのステンレス鋼を基体に
用い、以下実施例１と同様にして電池構造を形成し、対
電極層として、銀ペーストによる導電層にかえて、電解
めっきによる銅およびクロムの二層構造のものを裏面に
形成した。このものは、実施例１と同様、上方から入射
する光エネルギーの６〜５％の変換効率を示した。[Example 2] Using stainless steel with a diameter of 5 mm and a length of +oomm as the base, a battery structure was formed in the same manner as in Example 1, and as a counter electrode layer, electrolytic plating was used instead of a conductive layer made of silver paste. A two-layer structure of copper and chromium was formed on the back side. Similar to Example 1, this product exhibited a conversion efficiency of 6 to 5% for light energy incident from above.
第１図は、本発明の太陽電池に用いる基本単位の一実施
例を長手与向に沿って切断したところを示す拡大中央断
面図、第２図は、同じく長手方向に対して垂直に切断し
たところを示す拡大断面図であり、第３図は本発明の太
陽電池の一実施例を示す説明図、第４図（ａ）〜（ｆ）
は本発明の太陽電池の組立て手順の一例を示す説明図で
あり、第５図は、半導体層の中を入射光線が繰り返し通
過する様−Ｊ′を示す説明図である。（１）・基体 （２）・端部 （３）・半導体層
（４）・・・透明導電層 （５）・良導電層 （
６）・・棒状太陽電池 （７）・対電極層特許出願人凸版印刷株式会ネ−１代表者鈴木和夫（第３図↓↓↓↓ムア梁第１図FIG. 1 is an enlarged central cross-sectional view showing an example of the basic unit used in the solar cell of the present invention cut along the longitudinal direction, and FIG. FIG. 3 is an explanatory diagram showing one embodiment of the solar cell of the present invention, and FIGS. 4(a) to (f) are
FIG. 5 is an explanatory diagram showing an example of the procedure for assembling the solar cell of the present invention, and FIG. 5 is an explanatory diagram showing -J' in which an incident light beam repeatedly passes through a semiconductor layer. (1)・Substrate (2)・End portion (3)・Semiconductor layer
(4)...Transparent conductive layer (5)・Good conductive layer (
6) Rod-shaped solar cell (7) Counter electrode layer Patent applicant Toppan Printing Co., Ltd. Representative Kazuo Suzuki (Figure 3 ↓↓↓↓ Moore beam Figure 1
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58000585AJPS59125670A (en) | 1983-01-06 | 1983-01-06 | solar cells |
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58000585AJPS59125670A (en) | 1983-01-06 | 1983-01-06 | solar cells |
| Publication Number | Publication Date |
|---|---|
| JPS59125670Atrue JPS59125670A (en) | 1984-07-20 |
| JPS6325719B2 JPS6325719B2 (en) | 1988-05-26 |
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58000585AGrantedJPS59125670A (en) | 1983-01-06 | 1983-01-06 | solar cells |
| Country | Link |
|---|---|
| JP (1) | JPS59125670A (en) |
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| US8344238B2 (en) | 2005-07-19 | 2013-01-01 | Solyndra Llc | Self-cleaning protective coatings for use with photovoltaic cells |
| US7394016B2 (en) | 2005-10-11 | 2008-07-01 | Solyndra, Inc. | Bifacial elongated solar cell devices with internal reflectors |
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| US7879685B2 (en) | 2006-08-04 | 2011-02-01 | Solyndra, Inc. | System and method for creating electric isolation between layers comprising solar cells |
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| US8227684B2 (en) | 2006-11-14 | 2012-07-24 | Solyndra Llc | Solar panel frame |
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