JPS5821347A - Flat type semiconductor device - Google Patents

Abstract

PURPOSE:To contrive the reduction of pressure impressed on a pellet and prevent surface damages, by forming the entire area of one surface of an electrode post of a flat package contacted on a semiconductor pellet larger than the contact area on a cooling fin. CONSTITUTION:The part wherein electrode posts 13, 14 contact the cooling fin is reduced more than the flat surface contacted on the pellet 11 and mechanically and firmly installed by less total weighting. Further, the stepwise difference h 40mu is provided, and a good thermal conductive grease is applied resulting in the prevention-of the decrease in cooling effect. In this constitution, the fine patterns on the surface of a pellet are not damaged.

Description

Translated fromJapanese

【発明の詳細な説明】この発明は半導体ペレットに加わる圧力を緩和すること
ができる平置半導体装置に関する・第１図は従来の平温
半導体装置の断面図である・図において１１は半導体ペ
レｙ）、ＪＪは平置容器である・ま九、１１及び１４は
それぞれ電極ポストであシ通常上記平屋容器１２に固着
されている。１５及び１６社それぞれ半導体素子を冷却
する為の冷却フィンである。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a flat semiconductor device capable of relieving pressure applied to a semiconductor pellet. FIG. 1 is a sectional view of a conventional normal temperature semiconductor device. In the figure, 11 is a semiconductor pellet ), JJ is a flat container, and 9, 11 and 14 are electrode posts, respectively, which are usually fixed to the one-story container 12. These are cooling fins for cooling semiconductor devices manufactured by companies No. 15 and No. 16, respectively.

次に、第２図は他の従来の平綴半導体装置の断面図であ
る。第２図と第１１１に示される平盤半導体装置との相
違は電極−ス）Ｊ４Ｉｉの冷却シ゛イン（図では省略）
側が−大きい事である。これは電極ポスト１４と冷却フ
ィンとの電気的、熱的接触を向上させる為Ｏ第１図の改
善である。Next, FIG. 2 is a sectional view of another conventional flat-bound semiconductor device. The difference between the flat semiconductor device shown in Fig. 2 and Fig. 111 is the electrodes).
The side is big. This is an improvement over FIG. 1 to improve electrical and thermal contact between the electrode posts 14 and the cooling fins.

一般的に従来は半導体ペレ、）１１１１面が平坦であル
、電極４スト１４＠の半導体ペレット１１側及び冷却フ
（ン１５，１−側のそれぞれ加圧接触す葛部分の接触面
積は＃！埋同じであるか異なる場合でも許容され得る程
度の圧力（通常１００〜３００　＃／Ｊ　）　Ｋて加８
Ｅ接触されている。しかし、半導体素子性能の向上及び
多様化にともない第３図に示すような半導体ペレ。Generally, in the past, the surface of the semiconductor pellet (1111) was flat, and the contact area of the part of the semiconductor pellet (11 side) of the electrode 4st 14 @ and the part of the cooling fan (15, 1- side) that was in pressure contact with each other was # !Allowable pressure (usually 100 to 300 #/J) even if the pressure is the same or different.
E is in contact. However, with the improvement and diversification of semiconductor device performance, the semiconductor chip as shown in FIG.

トのように表面が微細パターン化されるケースが増えて
いる。このため、半導体ペレット１１と電極４スト１１
間の加圧力が４００〜８００に９／ｄ’　Ｋ　ｔでなる
場合もあ）、半導体ペレ、トｘｘｏ＠傷、電極ｌスト１
１面ＯＩＲ形等０不具合を生じるという欠点がある。を
九、全体の加圧力を低くする事で半導体ペレット１１と
電極ボス）１７間の加圧力は弱くなるが、それとともに
電極Ｉスト１３．ノ４と冷却フィン１５゜１＃間の単位
面積尚シの加圧力も弱（なシ、電気的抵抗の上昇及び機
械的固定力が弱くなシ素子取付けが不安定になるという
欠点がありた。Increasingly, there are cases where surfaces are patterned into fine patterns. For this reason, the semiconductor pellet 11 and the electrode 4 stroke 11
In some cases, the pressing force between 400 and 800 is 9/d'Kt), semiconductor pellet, toxxo@wound, electrode l strike 1
One side OIR type has the disadvantage of causing zero defects. (9) By lowering the overall pressing force, the pressing force between the semiconductor pellet 11 and the electrode boss 17 becomes weaker, but at the same time, the electrode I strike 13. The unit area between No. 4 and the cooling fin 15°1 # also has a weak pressing force (there was a drawback that the electrical resistance increased and the mechanical fixing force was weak, making the element installation unstable). .

この発明は上記の点に鑑みてなされたもので、その目的
は半導体ペレットに加わる圧力を緩和することかでｉｌ
為千蓋半導体装置を提供するととＫある。This invention was made in view of the above points, and its purpose is to alleviate the pressure applied to semiconductor pellets.
K is said to provide Tamechiba semiconductor devices.

以下、図面を参照してこの発明の一実施例を説明する。Hereinafter, one embodiment of the present invention will be described with reference to the drawings.

第３図に示すように電極ポスト１１゜１４の冷却フィン
（図示せず）に接する部分を電極ポストＪＪ、Ｊ４と半
導体ペレットとが接する平面よシ小さくする。すなわち
、電極ボス）７１．７４と冷却フィンとの接触面を小さ
くし、単位面積当ルの加圧力を増やす事で、全加重を低
くしても機械的に強固に取付は返事が可能となる。ｔた
、電気的抵抗も半導体ペレット１ｊと電極Ｉスト１４間
の接触面に比べて小さいので影譬度少なく性能低下には
ならない。さらに、段差（綽を４０Ｊ１１！度にしてお
き、その間ｆｉＫ良伝熱性グリース等を塗布する事で、
冷却効果の低減を防止ｊることかで龜る。上記間隙は使
用するグリース類の種類によって異なるが、例として電
極ポスト１３，１４のペレット接触部を２７−−、冷却
フィン接触部を雪Ｏ■φ（ｈ−３０＊）の場合にはダ蟹
−ス無しで熱抵抗の上昇が約４０−であるが、東芝シリ
コーン■製シリフーンダリスＹＧ＠１１１使用で５％０
上昇、信越化学工業ＫＷ製シリーーン！リスに８６０９
使用で８−Ｏ上昇（いずれも接触面のみの熱抵抗値）程
度であ）その効果は確認されている・次に、この発明の他Ｏ実施例を１ｌＥ５図を用いて説明
する０図に示したように、冷却フィンｘ５．１ｇと接す
るＷＯ電極−スト１３，１４の径を縮小するかわルに冷
却フィンＸｉ、１ｉ側を小さくする事でも同じ効果が得
られる・次に１関ｌＩｈとグリース（ＹＧ６１１１）使
用時の熱抵抗の上昇率を第５図に示しておく。As shown in FIG. 3, the portions of the electrode posts 11 and 14 that contact the cooling fins (not shown) are made smaller than the planes where the electrode posts JJ, J4 and the semiconductor pellet contact. In other words, by reducing the contact surface between the electrode boss (71.74) and the cooling fin and increasing the pressing force per unit area, it is possible to maintain a mechanically strong installation even when the total load is low. . In addition, since the electrical resistance is also smaller than the contact surface between the semiconductor pellet 1j and the electrode I striker 14, there is less chance of a problem and the performance will not deteriorate. In addition, by keeping the level difference (wall) at 40J11! degrees and applying fiK good heat conductive grease etc.,
It is difficult to prevent the cooling effect from decreasing. The above-mentioned gap varies depending on the type of grease used, but for example, if the pellet contact part of the electrode posts 13 and 14 is 27--, and the cooling fin contact part is snow O■φ (h-30*), -The increase in thermal resistance is about 40- without the heat resistance, but when using Toshiba Silicone's silicone dalis YG@111, it is 5% zero.
Rise, Shin-Etsu Chemical KW made Shireen! 8609 to squirrel
Its effect has been confirmed (the thermal resistance value increases only at the contact surface) by use. As shown, the same effect can be obtained by making the cooling fins Xi and 1i smaller instead of reducing the diameters of the WO electrodes 13 and 14 that are in contact with the cooling fin x5.1g. Figure 5 shows the rate of increase in thermal resistance when using grease (YG6111).

ζζで、接合部（ペレット）と冷却フィン１５゜１σ間
の総合熱抵抗との関係で、この上昇率そのものが総合熱
抵抗上昇率とはならないが、許容出来得る接触面熱抵抗
上昇率を１０−とすれば３０〜４０ｓの関ａｔで許容す
ることができる。In relation to the overall thermal resistance between the joint (pellet) and the cooling fin 15° 1σ, this rate of increase itself is not the overall thermal resistance increase rate, but the allowable contact surface thermal resistance increase rate is 10 -, a relationship of 30 to 40 seconds can be tolerated.

以上詳述しえようにこの発明によれば、半導体ペレット
に加゛わる圧力を緩和することができるので、半導体ペ
レットの表面が微細パターン化されている場合でもその
表面の損、傷を防止することがで！ゐ。As detailed above, according to the present invention, the pressure applied to the semiconductor pellet can be alleviated, so even if the surface of the semiconductor pellet is finely patterned, damage and scratches on the surface can be prevented. It's possible! Wow.

【図面の簡単な説明】[Brief explanation of the drawing]

第１図及び第２図はそれぞれ従来の平蓋半導体素子の断
面図、第３図はこの発明の一実施例を示す千型牛導体装
置の断面図、第４図はこの発明の他の実施例を示す平盤
半導体装置の断面図、第５図は間隙りと熱抵抗上昇率と
の関係葡示す図である。ィ、、Ｆｊ−・・半導体ペレッ）、ＪＪ−・・平蓋容器
、１１１．１４・・・電極４スト、１５　ａ　Ｊ　＃−
冷却フイ　　ン　・出願人代理人　　弁理士　鈴　江　武　彦第１図ｊＩ３ｒ！！Ｊ第４図FIGS. 1 and 2 are sectional views of a conventional flat-lid semiconductor device, FIG. 3 is a sectional view of a 100-mold conductor device showing one embodiment of the present invention, and FIG. 4 is a sectional view of another embodiment of the present invention. FIG. 5 is a sectional view of a flat semiconductor device showing an example, and is a diagram showing the relationship between the gap and the rate of increase in thermal resistance. ,,Fj-...Semiconductor pellet), JJ-...Flat lid container, 111.14...Electrode 4 stroke, 15 a J #-
Cooling fin / Applicant's representative Patent attorney Takehiko Suzue Figure 1 jI3r! ! J Figure 4

Claims (1)

Translated fromJapanese

【特許請求の範囲】[Claims]（１）半導体ペレットな封入する平型容器の電極Ｉスト
面において、半導体ペレットと接する一表面の全面積が
冷却フィンと接する部分の面積よル大きいことを特徴と
する平型半導体装置・（２）上記電極−ス）ＪＩｆと上
記冷却フィンとの接触する部分の一部に間隙を設け、そ
の間隙に良熱伝導性物質を塗布し九ことを特徴とする特
許請求の範囲第１項記載の平置半導体装置。(1) A flat semiconductor device characterized in that, on the electrode I strike surface of a flat container in which semiconductor pellets are enclosed, the total area of one surface in contact with the semiconductor pellet is larger than the area of the portion in contact with cooling fins. ) A gap is provided in a part of the contact portion between the electrode () JIf and the cooling fin, and a material with good thermal conductivity is applied to the gap. Flat-standing semiconductor device.