【発明の詳細な説明】本発明は膳族金属のアルキル化合物（トリメチルガリウ
ムＧｌ（ＣＨｓ）ｓ等）とアタシン（Ａｓｓｅｓ ）を
用い良熱分解法による化合物半導体成長装置等の排気ガ
ス処理装置に関するものである。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to an exhaust gas treatment device such as a compound semiconductor growth device using an alkyl compound of a metal group metal (trimethylgallium Gl(CHs)s, etc.) and Assess by a good thermal decomposition method. It is.
従来この種の化合物半導体成長装置の排気ガスに含まれ
ているひ素、ひ素化合物の粉塵（以下単に粉塵と称する
）の除去には、メツシュまたは小粒体の集合を利用した
フィルタが用いられている。Conventionally, a filter using a mesh or a collection of small particles has been used to remove arsenic and arsenic compound dust (hereinafter simply referred to as dust) contained in the exhaust gas of this type of compound semiconductor growth apparatus.
しかし、これらのフィルタは、粉塵が詰まシ易くて長時
間使用することができず、しかも詰った場合排気ガスの
出口がなくなるため成長装置中の圧力が上昇し非常に危
険であるという欠点があった。However, these filters are easily clogged with dust and cannot be used for long periods of time, and if they become clogged, there is no outlet for the exhaust gas, which increases the pressure inside the growth device and is extremely dangerous. Ta.
本発明は上述の欠点を解決するためのもので、簡単かつ
安全な粉塵除去用排気ガス処理装置を提供する仁とを目
的としている。The present invention is intended to solve the above-mentioned drawbacks and aims to provide a simple and safe exhaust gas treatment device for removing dust.
以下、図面に関連して本発明の詳細な説明する。The invention will now be described in detail in conjunction with the drawings.
本発明線、化合物半導体成長装置から排出される排気ガ
スを導いて外部に排出する配管系の中で、管の太い部分
では流速が減少すること、流速の遅い部分では粉塵が管
内に蓄積する仁と、および垂直になっている管の直前に
粉塵が蓄積すること等の実験事実を利用して簡単かつ安
全な排気ガス処理装置を構成したもので、その実施例の
正面断面図を図面に示している。In a piping system that guides and discharges exhaust gas from a compound semiconductor growth device to the outside, the flow velocity decreases in thicker parts of the pipe, and dust accumulates in the pipe in slower flow parts. A simple and safe exhaust gas treatment device was constructed using experimental facts such as the fact that dust accumulates just in front of vertical pipes, and a front sectional view of this example is shown in the drawing. ing.
排気ガス処理装置ｌは、化合物半導体成長装置から排出
される排気ガスを導いて外部に排出する配管系の途中に
設けられ、チャンバ２と、垂直パイプ３と、収納ボック
ス４とよシなる。The exhaust gas treatment device 1 is provided in the middle of a piping system that guides and discharges the exhaust gas discharged from the compound semiconductor growth device to the outside, and includes a chamber 2, a vertical pipe 3, and a storage box 4.
チャンバ２は、化合物半導体成長装置からの排気ガスを
導くパイプ５に接続され、その内部の空間６はパイプ５
から流入する排気ガスの流速を十分小さく減衰せしめ得
る広さを有している。The chamber 2 is connected to a pipe 5 that guides exhaust gas from the compound semiconductor growth apparatus, and the internal space 6 is connected to the pipe 5.
It has a width that can sufficiently attenuate the flow velocity of exhaust gas flowing in from the exhaust gas.
垂直パイプ３は、チャンバ２の上部に一体的に接続され
て骸チャンバ２上に直立しておシ、その中を上昇する排
気ガス中の粉塵を落下させるに十分な長さを有している
。この垂直パイプ３の上端は水平パイプ７に接続されて
いる。The vertical pipe 3 is integrally connected to the upper part of the chamber 2 and stands upright above the corpse chamber 2, and has a length sufficient to allow dust in the exhaust gas rising therein to fall. . The upper end of this vertical pipe 3 is connected to a horizontal pipe 7.
収納ボックス４は、上部に開口部８およびフランジ９を
有し、該開口部８をチャンバ２の下部の開口部ｌＯに連
通させてチャンバ２の下部のフランジ１１にフランジ９
をボルトνによシ結合することによシチャンパ２に着脱
可能に取り付けられている。この結合時に、フランジ９
に設けられたＯリング肋が７ランジ１１に密着して結合
面の気密が保たれている。The storage box 4 has an opening 8 and a flange 9 in the upper part, and communicates the opening 8 with the opening IO in the lower part of the chamber 2 so that the flange 9 is connected to the flange 11 in the lower part of the chamber 2.
is removably attached to the champer 2 by coupling it with a bolt ν. At the time of this connection, the flange 9
The O-ring rib provided on the flange 11 is in close contact with the 7 flange 11 to maintain airtightness of the joint surface.
バイブロからチャンバ怠の空間６に流入する排気ガスは
、空間６が十分な広さを有しているため、流速が大幅に
減少し、その後垂直パイプ３内を上昇して水平パイプ７
を通シ外部に排出されるが、上述のようにチャンバ８の
空間６は十分な広さを有するとともに垂直パイプ３は十
分な長さを有しているため、排気ガスに含まれている粉
塵は空間６内および垂直パイプ３内で沈下して収納ボッ
クス４の底部にたい積する。ボックス４の底部にたい積
した粉塵状ボルトνをゆるめ収納ボックスを取シ外して
廃棄することができ、この作業は定期的に行えばよい。Since the space 6 is large enough, the exhaust gas flowing from the vibro into the chamber-side space 6 significantly reduces its flow velocity, and then rises in the vertical pipe 3 and flows into the horizontal pipe 7.
However, since the space 6 of the chamber 8 has a sufficient width and the vertical pipe 3 has a sufficient length as described above, the dust contained in the exhaust gas is discharged to the outside. sinks in the space 6 and vertical pipe 3 and accumulates at the bottom of the storage box 4. The dust-like bolts ν accumulated on the bottom of the box 4 can be loosened, and the storage box can be removed and disposed of, and this work can be done periodically.
なお収納ボックス４を石英等の透明材より形成すれば、
内部の粉塵たい積状況を見ることができ、またたい積し
た粉塵もボックスごと酸処理するととくよシ容易に処理
することが可能である。Note that if the storage box 4 is made of a transparent material such as quartz,
It is possible to see the dust accumulation inside the box, and the accumulated dust can be easily disposed of by treating the box with acid.
以上述べたように、本発明によれば、排気ガ、ス中に含
まれる粉塵をチャンバおよび垂直パイプを通る間に沈下
させて収納ボックス底部にたい積させることができ、か
ったい積した粉塵を収納ボックスを取り外して容易に処
理することができるため、従来のフィルタ使用の場合の
目詰シ発生、成長装置中の圧力上昇等の問題を解決して
安全な排気ガス処理を行うことが可能となり、しかも構
造は簡単で保守も容易化されるという各種の優れた効果
を奏する。As described above, according to the present invention, the dust contained in the exhaust gas can be caused to settle down while passing through the chamber and the vertical pipe and accumulate at the bottom of the storage box, and the accumulated dust can be removed from the storage box. Since it can be removed and treated easily, it is possible to solve problems such as clogging and pressure increase in the growth equipment when using conventional filters, and to perform safe exhaust gas treatment. It has a simple structure and has various excellent effects such as easy maintenance.
図面は本発明に係る排気ガス処理装置の実施例を示す正
面断面図で、図中、ｌは排気ガス処理装置、２はチャン
バ、３は垂直パイプ、４は収納ボックス、６は空間、８
，１０は開【１部、９，１１はフランジ、νはボルト、
１３は０リングである。特許出願人 富士通株式金社The drawing is a front sectional view showing an embodiment of the exhaust gas treatment device according to the present invention, and in the figure, l is the exhaust gas treatment device, 2 is a chamber, 3 is a vertical pipe, 4 is a storage box, 6 is a space, and 8
, 10 is open [1 part, 9 and 11 are flanges, ν is bolt,
13 is the 0 ring. Patent applicant: Fujitsu Kinsha Ltd.
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19934181AJPS58101722A (en) | 1981-12-10 | 1981-12-10 | Exhaust gas treatment equipment |
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19934181AJPS58101722A (en) | 1981-12-10 | 1981-12-10 | Exhaust gas treatment equipment |
| Publication Number | Publication Date |
|---|---|
| JPS58101722Atrue JPS58101722A (en) | 1983-06-17 |
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP19934181APendingJPS58101722A (en) | 1981-12-10 | 1981-12-10 | Exhaust gas treatment equipment |
| Country | Link |
|---|---|
| JP (1) | JPS58101722A (en) |
| Publication number | Priority date | Publication date | Assignee | Title |
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| US6187072B1 (en) | 1995-09-25 | 2001-02-13 | Applied Materials, Inc. | Method and apparatus for reducing perfluorocompound gases from substrate processing equipment emissions |
| US6193802B1 (en) | 1995-09-25 | 2001-02-27 | Applied Materials, Inc. | Parallel plate apparatus for in-situ vacuum line cleaning for substrate processing equipment |
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| US6045618A (en)* | 1995-09-25 | 2000-04-04 | Applied Materials, Inc. | Microwave apparatus for in-situ vacuum line cleaning for substrate processing equipment |
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| US6194628B1 (en) | 1995-09-25 | 2001-02-27 | Applied Materials, Inc. | Method and apparatus for cleaning a vacuum line in a CVD system |
| US6193802B1 (en) | 1995-09-25 | 2001-02-27 | Applied Materials, Inc. | Parallel plate apparatus for in-situ vacuum line cleaning for substrate processing equipment |
| US6517913B1 (en) | 1995-09-25 | 2003-02-11 | Applied Materials, Inc. | Method and apparatus for reducing perfluorocompound gases from substrate processing equipment emissions |
| US6680420B2 (en) | 1995-09-25 | 2004-01-20 | Applied Materials Inc. | Apparatus for cleaning an exhaust line in a semiconductor processing system |
| US6689930B1 (en) | 1995-09-25 | 2004-02-10 | Applied Materials Inc. | Method and apparatus for cleaning an exhaust line in a semiconductor processing system |
| US6354241B1 (en) | 1999-07-15 | 2002-03-12 | Applied Materials, Inc. | Heated electrostatic particle trap for in-situ vacuum line cleaning of a substrated processing |
| US6255222B1 (en) | 1999-08-24 | 2001-07-03 | Applied Materials, Inc. | Method for removing residue from substrate processing chamber exhaust line for silicon-oxygen-carbon deposition process |
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