Movatterモバイル変換


[0]ホーム

URL:


JPS5766664A - Photosensor - Google Patents

Photosensor

Info

Publication number
JPS5766664A
JPS5766664AJP55142476AJP14247680AJPS5766664AJP S5766664 AJPS5766664 AJP S5766664AJP 55142476 AJP55142476 AJP 55142476AJP 14247680 AJP14247680 AJP 14247680AJP S5766664 AJPS5766664 AJP S5766664A
Authority
JP
Japan
Prior art keywords
film
transparent
wear resistant
laminated
glass
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP55142476A
Other languages
Japanese (ja)
Inventor
Masakuni Itagaki
Hideo Segawa
Koji Mori
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ricoh Co Ltd
Original Assignee
Ricoh Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ricoh Co LtdfiledCriticalRicoh Co Ltd
Priority to JP55142476ApriorityCriticalpatent/JPS5766664A/en
Publication of JPS5766664ApublicationCriticalpatent/JPS5766664A/en
Pendinglegal-statusCriticalCurrent

Links

Classifications

Landscapes

Abstract

PURPOSE:To enable the elimination of a light collector and a contact glass in a picture reading system by covering a photodetector provided with a photodetecting surface on the surface with a transparent wear resistant film. CONSTITUTION:A metallic electrode film 9 is formed in a desired pattern on a transparent insulating substrate 1 made of glass, plastic or the like. A Te film 7 and a CdTe film 6 are laminated on the film 9, a CdS film 5 and a transparent electrode film 4, e.g., SnO2, In2O3 or the like are further laminated thereon, and a transparent wear resistant film 17 is eventually covered on the entire surface. With such construction a thin film photodiode 18 and a blocking diode 3 are so connected as to be reverse polarity to one another.
JP55142476A1980-10-141980-10-14PhotosensorPendingJPS5766664A (en)

Priority Applications (1)

Application NumberPriority DateFiling DateTitle
JP55142476AJPS5766664A (en)1980-10-141980-10-14Photosensor

Applications Claiming Priority (1)

Application NumberPriority DateFiling DateTitle
JP55142476AJPS5766664A (en)1980-10-141980-10-14Photosensor

Publications (1)

Publication NumberPublication Date
JPS5766664Atrue JPS5766664A (en)1982-04-22

Family

ID=15316200

Family Applications (1)

Application NumberTitlePriority DateFiling Date
JP55142476APendingJPS5766664A (en)1980-10-141980-10-14Photosensor

Country Status (1)

CountryLink
JP (1)JPS5766664A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication numberPriority datePublication dateAssigneeTitle
JPS6464266A (en)*1987-05-221989-03-10Oki Electric Ind Co LtdCompletely close contact type image sensor
KR100286464B1 (en)*1997-03-252001-05-02포만 제프리 엘 Thin Film Transistors Fabricated on Plastic Substrates

Cited By (2)

* Cited by examiner, † Cited by third party
Publication numberPriority datePublication dateAssigneeTitle
JPS6464266A (en)*1987-05-221989-03-10Oki Electric Ind Co LtdCompletely close contact type image sensor
KR100286464B1 (en)*1997-03-252001-05-02포만 제프리 엘 Thin Film Transistors Fabricated on Plastic Substrates

Similar Documents

PublicationPublication DateTitle
EP0364780A3 (en)Solar cell with a transparent electrode
EP0112646A3 (en)Photovoltaic device
JPS56135980A (en)Photoelectric conversion element
JPS54116890A (en)Photoelectric converter
JPS57173256A (en)Image sensor
JPS5766664A (en)Photosensor
JPS57104278A (en)Photoelectric converting device
JPS55165066A (en)Photoelectric conversion unit
JPS5627562A (en)Tight image sensor
JPS5726476A (en)Linear photoelectromotive force element
JPS544582A (en)Photoelectric transducer
JPS5721875A (en)Photosensor
JPS5745288A (en)Thin film photo diode
JPS57157578A (en)Active crystalline silicon thin film photovoltaic element
JPS57166083A (en)Thin film type photoelectric conversion element
JPS5726475A (en)Linear photoelectromotive force element
JPS5687377A (en)Photoinformation reading element
JPS6490551A (en)Contact type image sensor
JPS5766662A (en)Image sensor
JPS5632774A (en)Thin film type photovoltaic element and manufacture thereof
JPS57183076A (en)Field control type optical semiconductor device
JPS5778263A (en)Adhesive type image sensor
JPS56138961A (en)Photoelectric conversion element
JPS5779664A (en)Thin film transistor
JPS5766663A (en)Image sensor

[8]ページ先頭

©2009-2025 Movatter.jp