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JPS5743420A - Mask alignment method - Google Patents

Mask alignment method

Info

Publication number
JPS5743420A
JPS5743420AJP55118494AJP11849480AJPS5743420AJP S5743420 AJPS5743420 AJP S5743420AJP 55118494 AJP55118494 AJP 55118494AJP 11849480 AJP11849480 AJP 11849480AJP S5743420 AJPS5743420 AJP S5743420A
Authority
JP
Japan
Prior art keywords
wafer
photoresist
alignment mark
mask
alignment method
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP55118494A
Other languages
Japanese (ja)
Inventor
Mitsuyoshi Koizumi
Nobuyuki Akiyama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi LtdfiledCriticalHitachi Ltd
Priority to JP55118494ApriorityCriticalpatent/JPS5743420A/en
Publication of JPS5743420ApublicationCriticalpatent/JPS5743420A/en
Pendinglegal-statusCriticalCurrent

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Classifications

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Abstract

PURPOSE:To facilitate the alignment of a mask with a semiconductor wafer by not adhering photoresist to the vicinity of an alignment mark on the wafer. CONSTITUTION:A mask 14 having a transparent part 14a is mounted only on the vicinity of an alignment mark above a wafer 1 coated with photoresist on the overall surface by a spinner, and the light of a mercury lamp 10 is then emitted via a condenser lens 9 as a parallel beam to the mask 14. When the wafer 1 is developed, the photoresist is removed from the part of the alignment mark. Accordingly, the alignment mark of the wafer 1 from which the photoresist is removed can be clearly detected.
JP55118494A1980-08-291980-08-29Mask alignment methodPendingJPS5743420A (en)

Priority Applications (1)

Application NumberPriority DateFiling DateTitle
JP55118494AJPS5743420A (en)1980-08-291980-08-29Mask alignment method

Applications Claiming Priority (1)

Application NumberPriority DateFiling DateTitle
JP55118494AJPS5743420A (en)1980-08-291980-08-29Mask alignment method

Publications (1)

Publication NumberPublication Date
JPS5743420Atrue JPS5743420A (en)1982-03-11

Family

ID=14738053

Family Applications (1)

Application NumberTitlePriority DateFiling Date
JP55118494APendingJPS5743420A (en)1980-08-291980-08-29Mask alignment method

Country Status (1)

CountryLink
JP (1)JPS5743420A (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication numberPriority datePublication dateAssigneeTitle
JPS58213424A (en)*1982-06-071983-12-12Hitachi Ltd Pattern detection method
JPS61152449A (en)*1984-12-261986-07-11株式会社　日本メデイカル・サプライRubber product and manufacture thereof
JPS62114222A (en)*1985-11-141987-05-26Hitachi LtdExposing apparatus
JPS63272547A (en)*1986-12-261988-11-10Mitsui Petrochem Ind Ltd Thermoplastic elastomer molded product
JP2010145362A (en)*2008-12-222010-07-01Global Nuclear Fuel-Japan Co Ltd Refueling machine
JP2012079738A (en)*2010-09-302012-04-19Dainippon Printing Co LtdAlignment mark substrate, element and method for manufacturing element

Citations (3)

* Cited by examiner, † Cited by third party
Publication numberPriority datePublication dateAssigneeTitle
JPS5286778A (en)*1976-01-141977-07-19Toshiba CorpMask aligning method for x-ray exposure
JPS52112280A (en)*1976-03-171977-09-20Mitsubishi Electric CorpX-ray exposure mask
JPS52139374A (en)*1976-05-171977-11-21Hitachi LtdAlignment pattern forming method for mask alignment

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication numberPriority datePublication dateAssigneeTitle
JPS5286778A (en)*1976-01-141977-07-19Toshiba CorpMask aligning method for x-ray exposure
JPS52112280A (en)*1976-03-171977-09-20Mitsubishi Electric CorpX-ray exposure mask
JPS52139374A (en)*1976-05-171977-11-21Hitachi LtdAlignment pattern forming method for mask alignment

Cited By (6)

* Cited by examiner, † Cited by third party
Publication numberPriority datePublication dateAssigneeTitle
JPS58213424A (en)*1982-06-071983-12-12Hitachi Ltd Pattern detection method
JPS61152449A (en)*1984-12-261986-07-11株式会社　日本メデイカル・サプライRubber product and manufacture thereof
JPS62114222A (en)*1985-11-141987-05-26Hitachi LtdExposing apparatus
JPS63272547A (en)*1986-12-261988-11-10Mitsui Petrochem Ind Ltd Thermoplastic elastomer molded product
JP2010145362A (en)*2008-12-222010-07-01Global Nuclear Fuel-Japan Co Ltd Refueling machine
JP2012079738A (en)*2010-09-302012-04-19Dainippon Printing Co LtdAlignment mark substrate, element and method for manufacturing element

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