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JPS572579A - Manufacture of junction type field effect transistor - Google Patents

Manufacture of junction type field effect transistor

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Publication number
JPS572579A
JPS572579AJP7627980AJP7627980AJPS572579AJP S572579 AJPS572579 AJP S572579AJP 7627980 AJP7627980 AJP 7627980AJP 7627980 AJP7627980 AJP 7627980AJP S572579 AJPS572579 AJP S572579A
Authority
JP
Japan
Prior art keywords
region
ion injection
source
manufacture
field effect
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP7627980A
Other languages
Japanese (ja)
Inventor
Tadahiko Tanaka
Takeshi Omukae
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Sanyo Electric Co Ltd
Sanyo Electric Co Ltd
Original Assignee
Tokyo Sanyo Electric Co Ltd
Sanyo Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Sanyo Electric Co Ltd, Sanyo Electric Co LtdfiledCriticalTokyo Sanyo Electric Co Ltd
Priority to JP7627980ApriorityCriticalpatent/JPS572579A/en
Publication of JPS572579ApublicationCriticalpatent/JPS572579A/en
Pendinglegal-statusCriticalCurrent

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Abstract

PURPOSE:To readily control the impurty density and the diffusion depth of ion injection region and insular region respectively by forming the ion injection region and the insular region by ion injection. CONSTITUTION:An oxidized film 23 is formed on a P type silicon semiconductor substrate 21, and an ion injection region 22 is formed by ion injection. Then, N type impurity ions are injected on the surface of the substrate 21 to form an insular region 24. Subsequently, a P<+> type gate region 25 is formed on the surface of the region 24, the region 24 is divided into source and drain regions 26 and 27, source and drain contacting regions 31 and 32 are further formed, and source and drain electrodes 29 and 30 are then formed.
JP7627980A1980-06-051980-06-05Manufacture of junction type field effect transistorPendingJPS572579A (en)

Priority Applications (1)

Application NumberPriority DateFiling DateTitle
JP7627980AJPS572579A (en)1980-06-051980-06-05Manufacture of junction type field effect transistor

Applications Claiming Priority (1)

Application NumberPriority DateFiling DateTitle
JP7627980AJPS572579A (en)1980-06-051980-06-05Manufacture of junction type field effect transistor

Publications (1)

Publication NumberPublication Date
JPS572579Atrue JPS572579A (en)1982-01-07

Family

ID=13600832

Family Applications (1)

Application NumberTitlePriority DateFiling Date
JP7627980APendingJPS572579A (en)1980-06-051980-06-05Manufacture of junction type field effect transistor

Country Status (1)

CountryLink
JP (1)JPS572579A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication numberPriority datePublication dateAssigneeTitle
JPS5987132A (en)*1982-11-121984-05-19Mitsubishi Chem Ind Ltd blow molded container
US5033093A (en)*1990-01-171991-07-16Peavey Electronics CorporationCompact microphone and method of manufacture
WO2020120492A1 (en)2018-12-142020-06-18Dsm Ip Assets B.V.Blow molded plastic container and gas storage tank comprising the blow molded plastic container as a liner

Cited By (3)

* Cited by examiner, † Cited by third party
Publication numberPriority datePublication dateAssigneeTitle
JPS5987132A (en)*1982-11-121984-05-19Mitsubishi Chem Ind Ltd blow molded container
US5033093A (en)*1990-01-171991-07-16Peavey Electronics CorporationCompact microphone and method of manufacture
WO2020120492A1 (en)2018-12-142020-06-18Dsm Ip Assets B.V.Blow molded plastic container and gas storage tank comprising the blow molded plastic container as a liner

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