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JPS57132191A - Active matrix substrate - Google Patents

Active matrix substrate

Info

Publication number
JPS57132191A
JPS57132191AJP56018228AJP1822881AJPS57132191AJP S57132191 AJPS57132191 AJP S57132191AJP 56018228 AJP56018228 AJP 56018228AJP 1822881 AJP1822881 AJP 1822881AJP S57132191 AJPS57132191 AJP S57132191A
Authority
JP
Japan
Prior art keywords
active matrix
matrix substrate
substrate
active
matrix
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56018228A
Other languages
Japanese (ja)
Other versions
JPH0133833B2 (en
Inventor
Shinji Morozumi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Suwa Seikosha KK
Original Assignee
Suwa Seikosha KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Suwa Seikosha KKfiledCriticalSuwa Seikosha KK
Priority to JP56018228ApriorityCriticalpatent/JPS57132191A/en
Priority to GB8123089Aprioritypatent/GB2081018B/en
Priority to FR8114639Aprioritypatent/FR2488013A1/en
Priority to US06/288,605prioritypatent/US4582395A/en
Priority to DE19813130407prioritypatent/DE3130407A1/en
Publication of JPS57132191ApublicationCriticalpatent/JPS57132191A/en
Priority to HK888/87Aprioritypatent/HK88887A/en
Publication of JPH0133833B2publicationCriticalpatent/JPH0133833B2/ja
Grantedlegal-statusCriticalCurrent

Links

Landscapes

JP56018228A1980-07-311981-02-10Active matrix substrateGrantedJPS57132191A (en)

Priority Applications (6)

Application NumberPriority DateFiling DateTitle
JP56018228AJPS57132191A (en)1981-02-101981-02-10Active matrix substrate
GB8123089AGB2081018B (en)1980-07-311981-07-27Active matrix assembly for display device
FR8114639AFR2488013A1 (en)1980-07-311981-07-28 ACTIVE MATRIX MATRIX DEVICE
US06/288,605US4582395A (en)1980-07-311981-07-30Active matrix assembly for a liquid crystal display device including an insulated-gate-transistor
DE19813130407DE3130407A1 (en)1980-07-311981-07-31 ACTIVE MATRIX ARRANGEMENT FOR A DISPLAY DEVICE
HK888/87AHK88887A (en)1980-07-311987-11-26"liquid crystal display device"

Applications Claiming Priority (1)

Application NumberPriority DateFiling DateTitle
JP56018228AJPS57132191A (en)1981-02-101981-02-10Active matrix substrate

Related Child Applications (2)

Application NumberTitlePriority DateFiling Date
JP61255018ADivisionJPS62148928A (en)1986-10-271986-10-27 liquid crystal display device
JP61255019ADivisionJPS62148929A (en)1986-10-271986-10-27 liquid crystal display device

Publications (2)

Publication NumberPublication Date
JPS57132191Atrue JPS57132191A (en)1982-08-16
JPH0133833B2 JPH0133833B2 (en)1989-07-14

Family

ID=11965798

Family Applications (1)

Application NumberTitlePriority DateFiling Date
JP56018228AGrantedJPS57132191A (en)1980-07-311981-02-10Active matrix substrate

Country Status (1)

CountryLink
JP (1)JPS57132191A (en)

Cited By (19)

* Cited by examiner, † Cited by third party
Publication numberPriority datePublication dateAssigneeTitle
JPS6052892A (en)*1983-09-011985-03-26セイコーエプソン株式会社Liquid crystal image display unit
JPS60235120A (en)*1984-05-081985-11-21Canon IncDriving method of transistor
JPS62148929A (en)*1986-10-271987-07-02Seiko Epson Corp liquid crystal display device
JPS63170682A (en)*1986-10-031988-07-14セイコーエプソン株式会社 active matrix board
JPS63307776A (en)*1987-06-101988-12-15Hitachi Ltd Thin film semiconductor device and its manufacturing method
JPS63307431A (en)*1987-06-101988-12-15Hitachi LtdThin film semiconductor display device
JPH0244317A (en)*1988-08-051990-02-14Hitachi Ltd Liquid crystal display device with auxiliary capacity
JPH06342272A (en)*1994-05-091994-12-13Seiko Epson Corp Liquid crystal display
JPH07202215A (en)*1994-12-051995-08-04Hitachi Ltd Thin film semiconductor device and manufacturing method thereof
JPH08190366A (en)*1995-10-061996-07-23Seiko Epson Corp Active matrix substrate
US5554861A (en)*1982-04-131996-09-10Seiko Epson CorporationThin film transistors and active matrices including the same
JPH09171374A (en)*1996-09-021997-06-30Seiko Epson Corp Active matrix substrate
US5698864A (en)*1982-04-131997-12-16Seiko Epson CorporationMethod of manufacturing a liquid crystal device having field effect transistors
US5726720A (en)*1995-03-061998-03-10Canon Kabushiki KaishaLiquid crystal display apparatus in which an insulating layer between the source and substrate is thicker than the insulating layer between the drain and substrate
US5736751A (en)*1982-04-131998-04-07Seiko Epson CorporationField effect transistor having thick source and drain regions
US6607947B1 (en)1990-05-292003-08-19Semiconductor Energy Laboratory Co., Ltd.Method of manufacturing a semiconductor device with fluorinated layer for blocking alkali ions
US6727522B1 (en)1998-11-172004-04-27Japan Science And Technology CorporationTransistor and semiconductor device
US7362139B2 (en)2001-07-302008-04-22Semiconductor Energy Laboratory Co., Ltd.Semiconductor device
JP2009025822A (en)*1998-03-272009-02-05Semiconductor Energy Lab Co Ltd Semiconductor device

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication numberPriority datePublication dateAssigneeTitle
JP4661935B2 (en)2008-10-152011-03-30ソニー株式会社 Liquid crystal display device

Citations (2)

* Cited by examiner, † Cited by third party
Publication numberPriority datePublication dateAssigneeTitle
JPS55518A (en)*1978-06-141980-01-05Suwa Seikosha KkLiquid crystal display unit
JPS552266A (en)*1978-06-201980-01-09Matsushita Electric Industrial Co LtdImage display unit

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication numberPriority datePublication dateAssigneeTitle
JPS55518A (en)*1978-06-141980-01-05Suwa Seikosha KkLiquid crystal display unit
JPS552266A (en)*1978-06-201980-01-09Matsushita Electric Industrial Co LtdImage display unit

Cited By (28)

* Cited by examiner, † Cited by third party
Publication numberPriority datePublication dateAssigneeTitle
US5698864A (en)*1982-04-131997-12-16Seiko Epson CorporationMethod of manufacturing a liquid crystal device having field effect transistors
US6294796B1 (en)1982-04-132001-09-25Seiko Epson CorporationThin film transistors and active matrices including same
US6242777B1 (en)1982-04-132001-06-05Seiko Epson CorporationField effect transistor and liquid crystal devices including the same
US5554861A (en)*1982-04-131996-09-10Seiko Epson CorporationThin film transistors and active matrices including the same
US5736751A (en)*1982-04-131998-04-07Seiko Epson CorporationField effect transistor having thick source and drain regions
JPS6052892A (en)*1983-09-011985-03-26セイコーエプソン株式会社Liquid crystal image display unit
JPS60235120A (en)*1984-05-081985-11-21Canon IncDriving method of transistor
JPS63170682A (en)*1986-10-031988-07-14セイコーエプソン株式会社 active matrix board
JPS62148929A (en)*1986-10-271987-07-02Seiko Epson Corp liquid crystal display device
JPS63307776A (en)*1987-06-101988-12-15Hitachi Ltd Thin film semiconductor device and its manufacturing method
JPS63307431A (en)*1987-06-101988-12-15Hitachi LtdThin film semiconductor display device
JPH0244317A (en)*1988-08-051990-02-14Hitachi Ltd Liquid crystal display device with auxiliary capacity
US7355202B2 (en)1990-05-292008-04-08Semiconductor Energy Co., Ltd.Thin-film transistor
US6607947B1 (en)1990-05-292003-08-19Semiconductor Energy Laboratory Co., Ltd.Method of manufacturing a semiconductor device with fluorinated layer for blocking alkali ions
JPH06342272A (en)*1994-05-091994-12-13Seiko Epson Corp Liquid crystal display
JPH07202215A (en)*1994-12-051995-08-04Hitachi Ltd Thin film semiconductor device and manufacturing method thereof
US5726720A (en)*1995-03-061998-03-10Canon Kabushiki KaishaLiquid crystal display apparatus in which an insulating layer between the source and substrate is thicker than the insulating layer between the drain and substrate
JPH08190366A (en)*1995-10-061996-07-23Seiko Epson Corp Active matrix substrate
JPH09171374A (en)*1996-09-021997-06-30Seiko Epson Corp Active matrix substrate
US9262978B2 (en)1998-03-272016-02-16Semiconductor Energy Laboratory Co., Ltd.Driving circuit of a semiconductor display device and the semiconductor display device
JP2009025822A (en)*1998-03-272009-02-05Semiconductor Energy Lab Co Ltd Semiconductor device
KR100436654B1 (en)*1998-11-172004-06-22도꾸리쯔교세이호징 가가꾸 기쥬쯔 신꼬 기꼬Transistor and Semiconductor Device
US7064346B2 (en)1998-11-172006-06-20Japan Science And Technology AgencyTransistor and semiconductor device
US6727522B1 (en)1998-11-172004-04-27Japan Science And Technology CorporationTransistor and semiconductor device
US7362139B2 (en)2001-07-302008-04-22Semiconductor Energy Laboratory Co., Ltd.Semiconductor device
USRE41215E1 (en)2001-07-302010-04-13Semiconductor Energy Laboratory Co., Ltd.Semiconductor device
USRE43401E1 (en)2001-07-302012-05-22Semiconductor Energy Laboratory Co., Ltd.Semiconductor device
USRE44657E1 (en)2001-07-302013-12-24Semiconductor Energy Laboratory Co., Ltd.Semiconductor device

Also Published As

Publication numberPublication date
JPH0133833B2 (en)1989-07-14

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