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JPS56164550A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS56164550A
JPS56164550AJP6736280AJP6736280AJPS56164550AJP S56164550 AJPS56164550 AJP S56164550AJP 6736280 AJP6736280 AJP 6736280AJP 6736280 AJP6736280 AJP 6736280AJP S56164550 AJPS56164550 AJP S56164550A
Authority
JP
Japan
Prior art keywords
film
nitride
oxide
opening section
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP6736280A
Other languages
Japanese (ja)
Other versions
JPS6322065B2 (en
Inventor
Yunosuke Kawabe
Yoshinobu Monma
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu LtdfiledCriticalFujitsu Ltd
Priority to JP6736280ApriorityCriticalpatent/JPS56164550A/en
Publication of JPS56164550ApublicationCriticalpatent/JPS56164550A/en
Publication of JPS6322065B2publicationCriticalpatent/JPS6322065B2/ja
Grantedlegal-statusCriticalCurrent

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Classifications

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Abstract

PURPOSE:To prevent the occurrence of birdbeak and to increase the integration of a circuit by arranging a second Si nitride filn at the side of a two-layer film opening section consisting of an Si oxide film and an Si nitride film wherein the insulating film constitution is consisted as a selective oxide mask. CONSTITUTION:An opening section 5 is formed at a two-layer film isolation region between elements consisting of an oxide film 2 and a nitride film 3 provided on an Si substrate 1. Next, after piling the second nitride film 6 on the whole surface of the film 3, ion implantation is applied so that B may be implanted into only the film 6, for example. Next, the whole surface of the film 6 is etched by using the characteristic of quick etching speed for the nitride film implanted ion and films 6' thickly formed at the side of the opening section are left. Then, the films 2, 3, 6' are consisted as masks to form an isolation oxide layer 7 by selective oxidization. In this way, the occurrence of birdbeak can be prevented as oxidization through the film 2 is checked and the integration of each kind of integrated circuit can be improved.
JP6736280A1980-05-211980-05-21Manufacture of semiconductor deviceGrantedJPS56164550A (en)

Priority Applications (1)

Application NumberPriority DateFiling DateTitle
JP6736280AJPS56164550A (en)1980-05-211980-05-21Manufacture of semiconductor device

Applications Claiming Priority (1)

Application NumberPriority DateFiling DateTitle
JP6736280AJPS56164550A (en)1980-05-211980-05-21Manufacture of semiconductor device

Publications (2)

Publication NumberPublication Date
JPS56164550Atrue JPS56164550A (en)1981-12-17
JPS6322065B2 JPS6322065B2 (en)1988-05-10

Family

ID=13342821

Family Applications (1)

Application NumberTitlePriority DateFiling Date
JP6736280AGrantedJPS56164550A (en)1980-05-211980-05-21Manufacture of semiconductor device

Country Status (1)

CountryLink
JP (1)JPS56164550A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication numberPriority datePublication dateAssigneeTitle
JPS61270846A (en)*1985-05-241986-12-01Matsushita Electronics CorpSemiconductor device
JPS6415946A (en)*1987-07-101989-01-19Hitachi LtdManufacture of semiconductor device
US5173444A (en)*1990-09-181992-12-22Sharp Kabushiki KaishaMethod for forming a semiconductor device isolation region

Citations (1)

* Cited by examiner, † Cited by third party
Publication numberPriority datePublication dateAssigneeTitle
JPS55165637A (en)*1979-06-111980-12-24Nippon Telegr & Teleph Corp <Ntt>Manufacture of semiconductor integrated circuit

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication numberPriority datePublication dateAssigneeTitle
JPS55165637A (en)*1979-06-111980-12-24Nippon Telegr & Teleph Corp <Ntt>Manufacture of semiconductor integrated circuit

Cited By (3)

* Cited by examiner, † Cited by third party
Publication numberPriority datePublication dateAssigneeTitle
JPS61270846A (en)*1985-05-241986-12-01Matsushita Electronics CorpSemiconductor device
JPS6415946A (en)*1987-07-101989-01-19Hitachi LtdManufacture of semiconductor device
US5173444A (en)*1990-09-181992-12-22Sharp Kabushiki KaishaMethod for forming a semiconductor device isolation region

Also Published As

Publication numberPublication date
JPS6322065B2 (en)1988-05-10

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