JPS56103487A - Manufacture of gunn diode - Google Patents

Abstract

PURPOSE:To enable to always constantly control the depth of an N-GaAs layer converted into a transition region by a method wherein an N<+>-GaAs layer is formed on the surface of the N-GaAs active layer and ions are injected. CONSTITUTION:An N<++> type buffer GaAs layer, the N-GaAs active layer 23 and the N<+>-GaAs layer 24 of sulphur or selenium doped are formed in sequence on the N<++>-GaAs substrate 21 by an epitaxial growth method. Thereafter, an impurity causing the sulphur or selenium which is kept doped in the N<+>-GaAs layer to be speed-up diffused is injected by the ion-injecting method and heat-treated, thereby enabling the N<++> type primary layer 26 and the constant thickness transition region to simultaneously be formed on the N-GaAs layer 23. Thus, the depth of the N-GaAs layer 23 converted to the transition region can always constantly be controlled. As a result, the Gunn diode less in fluctuation of the frequency is obtained.